WO2020150964A1 - 一种阻抗比值不同的拆分式谐振器 - Google Patents

一种阻抗比值不同的拆分式谐振器 Download PDF

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Publication number
WO2020150964A1
WO2020150964A1 PCT/CN2019/072989 CN2019072989W WO2020150964A1 WO 2020150964 A1 WO2020150964 A1 WO 2020150964A1 CN 2019072989 W CN2019072989 W CN 2019072989W WO 2020150964 A1 WO2020150964 A1 WO 2020150964A1
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resonator
sub
resonators
split
potential
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French (fr)
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张孟伦
庞慰
孙晨
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters

Definitions

  • the invention relates to a resonator, in particular to a split resonator with different impedance ratios.
  • the thin film bulk wave resonator made by the longitudinal resonance of the piezoelectric film in the thickness direction has become a viable alternative to surface acoustic wave devices and quartz crystal resonators in mobile phone communications and high-speed serial data applications.
  • the RF front-end bulk wave filter/duplexer provides superior filtering characteristics, such as low insertion loss, steep transition band, and strong ESD resistance. With the current increasing requirements for the power capacity of electronic devices such as filters and resonators in communications and other fields, the heat generation of filters and resonators has increased significantly.
  • the high temperature caused by high heat will cause the device Q value and the electromechanical coupling coefficient to drop significantly; in addition, the high temperature will also cause the frequency of the resonator to drift; in addition, the high temperature will also reduce the overall life of the device.
  • Many of the above problems eventually lead to severe degradation of the performance parameters of the filter composed of resonators, such as bandwidth, insertion loss, roll-off characteristics, and out-of-band suppression.
  • the traditional method to deal with the heating problem is to increase the area of the resonator. This method can effectively reduce the power density in the resonator within a certain power range, thereby reducing the working temperature of the resonator.
  • simply relying on the method of increasing the area can no longer meet the requirements of the current resonator for power capacity, and further improvements to the traditional structure are needed.
  • the purpose of the present invention is to provide a split resonator with different impedance ratios, which not only increases the equivalent area, but also increases the perimeter-area ratio of the resonator, thereby improving the heat dissipation performance of the resonator and the overall electronic device Power Capacity.
  • the bridge structure helps suppress the high-order harmonics generated by the unbalance of the circuit, and improves the circuit's ability to suppress nonlinear effects.
  • the present invention provides the following technical solutions:
  • the split resonator is a resonator group composed of a plurality of sub-resonators; the resonator group includes more than two parallel branches, each parallel branch There are two or more series-connected sub-resonators; a single sub-resonator with a bridge or a group of sub-resonators with a bridge between the series connection points in the adjacent parallel branches.
  • the bridged sub-resonator group includes more than two parallel branches, each parallel branch includes more than two series-connected sub-resonators, and the series connection points in the adjacent parallel branches A single sub-resonator with a bridge between them or a group of sub-resonators with the bridge.
  • one sub-resonator is short-circuited, or multiple non-adjacent sub-resonators are short-circuited.
  • the resonator group includes two parallel branches, wherein the first parallel branch includes a first sub-resonator and a second sub-resonator that are connected in series and whose C-axis of the piezoelectric layer is opposite to each other.
  • the parallel branch contains a third sub-resonator and a fourth sub-resonator connected in series and the piezoelectric layer C-axis points opposite; at the series connection point of the first sub-resonator and the second sub-resonator, it resonates with the third sub-resonator Between the series connection point of the fourth sub-resonator and the fourth sub-resonator, there is a fifth sub-resonator; the C-axis of the piezoelectric layer of the first sub-resonator and the third sub-resonator are opposite, and they are located in the fifth sub-resonator The first side of the device; the C-axis of the piezoelectric layer of the second sub-resonator and the fourth sub-resonator point to opposite directions, and they are located on
  • the sub-resonators on both sides of one end of the bridge structure and located on the same parallel branch have different The piezoelectric layer C-axis points; the sub-resonators on the same side of the bridge structure and located in different parallel branches have different piezoelectric layer C-axis directions.
  • each sub-resonator of the plurality of sub-resonators maintains acoustic isolation.
  • the width of the gap between the upper electrode or the lower electrode or the piezoelectric layer of two adjacent sub-resonators is not less than half an acoustic wave wavelength, or not less than 2 acoustic wave wavelengths.
  • the split resonator has two pins, the two pins occupy a first potential and a second potential respectively; one side of each sub-resonator has the first potential and The other side has the second potential.
  • the C axis of the piezoelectric layer of each sub-resonator is directed from the first potential to the second potential, or from the second potential to the first potential.
  • the split resonator is provided with two sets of equipotential interconnection, wherein the first set of equipotential interconnection is composed of the electrodes of the sub-resonator at the first potential and the electrical connections between these electrodes, and the second set The equipotential interconnection consists of the electrodes of the sub-resonator at the second potential and the electrical connections between these electrodes.
  • the upper electrode and the lower electrode are made of metal, a multilayer composite material or alloy of metal.
  • the metal includes at least one of the following: molybdenum, ruthenium, gold, magnesium, aluminum, tungsten, titanium, chromium, iridium, osmium, platinum, gallium, and germanium.
  • the piezoelectric layer material includes aluminum nitride, zinc oxide, lead zirconate titanate, lithium niobate, and the foregoing materials doped with a certain proportion of rare earth elements.
  • the traditional single resonator in the electronic device is split into a polygonal resonator group composed of several polygonal sub-resonators, and a bridge structure is added to suppress high-order harmonics, which not only increases the equivalent area, but also It can also increase the perimeter area ratio of the resonator, thereby improving the heat dissipation performance of the resonator and the overall power capacity of the electronic device.
  • Another advantage of the split resonator is that it helps to make the resonator layout more compact, so as to make rational use of space and reduce device size.
  • the bridge structure of the present invention has different operation modes under different voltage frequencies at its two ends, which are all helpful to improve the balance of the circuit, thereby helping to suppress high-order harmonics.
  • FIG. 1A is a schematic diagram of the structure of a first split resonator according to an embodiment of the present invention
  • 1B is a circuit diagram of the first split resonator according to an embodiment of the present invention.
  • FIG. 2 is a circuit diagram of another split resonator according to an embodiment of the present invention.
  • Fig. 3 is a schematic diagram of another split resonator according to an embodiment of the present invention.
  • Fig. 4 is a schematic diagram of yet another split resonator according to an embodiment of the present invention.
  • Fig. 5 is a schematic diagram of yet another split resonator according to an embodiment of the present invention.
  • Fig. 6 is a schematic diagram of another split resonator according to an embodiment of the present invention.
  • Fig. 7 is an explanatory diagram of the relationship between equipotential connection and C-axis direction related to the present invention.
  • FIG. 8 is a schematic diagram of the relationship between the impedance of the bridge structure and the voltage frequency according to the embodiment of the present invention.
  • 9A is an equivalent circuit diagram when the bridge structure in the split resonator is in a short-circuit state according to an embodiment of the present invention.
  • 9B is an equivalent circuit diagram when the bridge structure in the split resonator according to the embodiment of the present invention is in an open state.
  • FIG. 1A is a schematic diagram of the structure of a first split resonator according to an embodiment of the present invention.
  • the traditional single resonator is split into five sub-resonators.
  • the five sub-resonators are the first resonator R101, the second resonator R102, and the third resonator in the figure.
  • FIG. 1A shows the specific connection mode of the 5-resonator, which will be described in detail below.
  • the upper electrode of the first resonator R101 has a pin C100, and the upper electrode of the first resonator R101 and the upper electrode of the second resonator R102 are electrically connected to C101; the lower electrode of the first resonator R101 and the fifth resonator R105
  • the lower electrode of the second resonator R102 is electrically connected to C103; the lower electrode of the second resonator R102 and the upper electrode of the fifth resonator R105 are electrically connected to C105;
  • the lower electrode of the fifth resonator R105 is electrically connected to the lower electrode of the third resonator R103 C104;
  • the upper electrode of the fifth resonator R105 and the lower electrode of the fourth resonator R104 are electrically connected C106;
  • the upper electrode of the third resonator R103 and the upper electrode of the fourth resonator R104 are electrically connected C102, the fourth resonator
  • the upper electrode of R104 has pin C107.
  • FIG. 1B is the circuit diagram of the first split resonator according to the embodiment of the present invention.
  • R101 and R103 are connected in series to form the first branch
  • R102 and R104 are connected in series to form the second branch.
  • the first branch and the second branch are connected in parallel.
  • the circuit is called the first parallel branch
  • the second branch is called the second parallel branch.
  • R105 is bridged between the series connection points in the first and second parallel branches.
  • Fig. 2 is a circuit diagram of another split resonator according to an embodiment of the present invention.
  • the split resonator includes 8 sub-resonators R201-R208, where R201, R203, and R205 are connected in series to form the first parallel branch, and R202, R204, and R206 are connected in series to form the second parallel branch. R207 and R208 are bridged between the two parallel branches.
  • the splitting principle of the split resonator shown in FIG. 2 is equivalent impedance splitting, that is, to ensure that the equivalent impedance of the resonator group after splitting is equal to the impedance of the original single resonator (for example, 50 ⁇ ).
  • the symmetry of the system can be improved, thereby suppressing higher harmonics.
  • the choice of the position of the two ends of the bridge structure (that is, the choice between which two sub-resonators in series) is based on the impedance ratio on both sides of the first end of the bridge structure and the impedance ratio on both sides of the second end of the bridge structure The impact of the difference between the two is determined by the principle of reduction.
  • the "impedance ratio on both sides” here should be understood as the ratio of the sum of the impedance of the first side of the two sides to the sum of the impedance of the second side of the two sides.
  • FIG. 3 is a schematic diagram of another split resonator according to the embodiment of the present invention.
  • the R507 in the bridge structure Is to reduce the influence of the difference between Z501/(Z503+Z505) and Z502/(Z504+Z506).
  • some bridge structures can be optionally omitted.
  • R202 and R206 can be removed, and the original resonator position can be short-circuited with a wire; or R204 can be removed and the original resonator position can be short-circuited with a wire Short. That is, in a certain parallel branch, one or multiple non-adjacent sub-resonators may be shorted.
  • Fig. 4 is a schematic diagram of another split resonator according to an embodiment of the present invention. As shown in Fig. 4, it includes 3 parallel branches. Each parallel branch has 2 sub-resonators and 2 bridges. The sub-resonator.
  • FIG. 5 is a schematic diagram of another split resonator according to an embodiment of the present invention. As shown in FIG. 5, it includes 3 parallel branches, and each parallel branch has 3 series-connected sub-resonators. Up to 4 bridged sub-resonators can be set, as shown in the figure.
  • a sub-resonator group can be used instead.
  • the sub-resonator group is a series-parallel connection of multiple sub-resonators.
  • the sub-resonator group can also include a bridge structure, for example, as shown in FIG. 6, which is a schematic diagram of another split resonator according to an embodiment of the present invention.
  • the resonator B600 in FIG. 6 shows an optional form of the resonator B600 in the figure, and may also adopt other split resonator forms in the embodiment of the present invention.
  • the resonator group B600 (which includes R605-R609) in FIG. 6 may also be a resonator group, and may include the bridge structure in the embodiment of the present invention. It can be seen that this is a cyclic method. , Forming a "fractal" structure.
  • Fig. 7 is an explanatory diagram of the relationship between equipotential connection and C-axis direction related to the present invention.
  • Rsub1-Rsub4 have upper electrodes EH1-EH4, lower electrodes EL1-EL4, and piezoelectric layers A1-A4, respectively; the piezoelectric layers of the four sub-resonators have C-axis pointing to C1-C4, respectively.
  • the electrodes of the sub-resonators are equipotentially connected by conductors (solid lines F1, F2 and F3 and dashed lines D1, D2 and D3).
  • EH1-F1-EL2-F2-EH3-F3-EH4 forms a set of equipotential connections (here called A), and EL1-D1-EH2-D2-EL3-D3-EL4 forms another set of equipotential connections (called As B). If A occupies the first potential, then B occupies the second potential. After the equipotential connection is established, all the connected electrodes in A have the first potential, and correspondingly, all the connected electrodes in B have the second potential.
  • the split resonator has two pins, and the two pins occupy the first potential and the second potential respectively.
  • One side of each sub-resonator has the aforementioned first potential and the other side has the aforementioned second potential. That is, each split resonator contains only two sets of equipotential connections.
  • the C axis of the piezoelectric layer of each sub-resonator is directed from the first potential to the second potential, or from the second potential to the first potential.
  • the direction of the C-axis of the piezoelectric layer of at least one sub-resonator is opposite to the direction of the C-axis of the piezoelectric layer of at least one of the remaining sub-resonators.
  • the principle of resonator splitting is equivalent impedance splitting, that is, ensuring that the equivalent impedance of the resonator group after splitting is equal to the impedance of the original single resonator (for example, 50 ⁇ ).
  • the impedance ratios of the resonators in each parallel branch are different, that is, the so-called "different impedance ratios".
  • the impedance ratio of the first resonator R101 and the third resonator R103 is usually not equal to the impedance ratio of the second resonator R102 and the fourth resonator R104.
  • the two pin terminals of the split resonator have potential P1 and potential P2, respectively, and have potential p3 between R101 and R103, and potential p4 between R102 and R104.
  • the impedance ratio of R101 and R103 is not equal to the impedance ratio of R102 and R104, which makes the value of potential P3 not equal to the value of potential P4, resulting in P3 and P4 forms a potential difference, that is, voltage.
  • a voltage will be applied to R105, and the impedance of R105 and the frequency of the voltage applied to it will have the relationship of change in FIG. 8, which is a bridge according to the embodiment of the present invention.
  • FIG. 8 is a bridge according to the embodiment of the present invention.
  • the abscissa represents the frequency
  • the ordinate represents the modulus of the impedance of the bridge structure.
  • the impedance mode value of R105 When the voltage frequency applied across R105 is the series resonance frequency fs of R105, the impedance mode value of R105 has the minimum value Zs; when the voltage frequency is the parallel resonance frequency fp of R105, the impedance mode value of R105 has the maximum value Zp.
  • FIG. 1B is transformed into the circuit shown in FIG. 9A.
  • 9A is an equivalent circuit diagram when the bridge structure in the split resonator is in a short-circuit state according to an embodiment of the present invention.
  • the sub-resonators R101 and R102 are in a parallel relationship, and the sub-resonators R103 and R104 are in a parallel relationship; at the same time, the C-axis directions of R101 and R102 are opposite in the sense of potential, and R103 and R103 The direction of the C axis of R104 is opposite in the sense of potential.
  • the above-mentioned bridge structure can help suppress higher harmonics in the parallel structure formed by R101 and R102 and R103 and R104, and the selection of the above-mentioned C-axis orientation of the piezoelectric layer of each sub-resonator can further improve the suppression effect.
  • R105 has an impedance Zp
  • 9B is an equivalent circuit diagram when the bridge structure in the split resonator according to the embodiment of the present invention is in an open state.
  • the sub-resonators R101 and R103 are in a series relationship, and the sub-resonators R102 and R104 are in a series relationship; at the same time, the C-axis directions of R101 and R103 are opposite in the sense of potential, and R102 and R102 The direction of the C axis of R104 is opposite in the sense of potential.
  • the above structure can help suppress the higher harmonics in the series structure formed by R101 and R103 and R102 and R104.
  • the circuit of the split resonator When the voltage applied across R105 is at other frequencies, the circuit of the split resonator is in the superimposed state of FIG. 9A and FIG. 9B. Since the signal through the split resonator usually has a certain bandwidth, that is, it has multiple frequency components with continuous or discrete distribution, the circuit in Figure 1B can make full use of the two modes shown in Figure 9A and Figure 9B to reduce the circuit In order to improve the balance of the circuit and the ability to suppress nonlinear effects.
  • the two modes similar to those shown in Fig. 9A and Fig. 9B, namely the equivalent short circuit or open circuit mode of the bridge structure, can be used to help Suppress high-order harmonics in the circuit.
  • the bridge structure here can be a single sub-resonator such as R105 or a group of sub-resonators such as B600.
  • the sub-resonators on both sides of one end of the bridge structure and located in the same parallel branch have different C-axis directions of the piezoelectric layer. For example, as shown in Fig.
  • R101 and R103 on both sides of p3 at one end of R105 have different C-axis directions of the piezoelectric layer, which are indicated by arrows in the figure.
  • the sub-resonators on the same side of the bridge structure and located in different parallel branches have different C-axis directions of the piezoelectric layers.
  • R101 and R102 on the left side of R105 have different piezoelectric layer C-axis directions, which are indicated by arrows in the figure.
  • Figures 2 to 6 also use arrows to indicate the direction of the C-axis of the piezoelectric layer of the sub-resonator, and the bridge structure helps to suppress the higher harmonics in the circuit.
  • the gap value between the electrodes or the piezoelectric layers of adjacent sub-resonators after splitting is not less than two acoustic wave wavelengths, and the preferred range is not less than half the acoustic wave wavelength.
  • the materials of the upper electrode and the lower electrode can be selected from the following metals: molybdenum, ruthenium, gold, magnesium, aluminum, tungsten, titanium, chromium, iridium, osmium, platinum, gallium, and germanium.
  • the piezoelectric layer material can be selected from aluminum nitride, zinc oxide, lead zirconate titanate, lithium niobate, and the above materials doped with a certain proportion of rare earth elements.
  • the piezoelectric material is a thin film with a thickness of less than 10 microns, and has a single crystal or polycrystalline structure, and is made by sputtering or deposition process.

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Abstract

一种拆分式谐振器，所述拆分式谐振器是由多个子谐振器构成的谐振器群；所述谐振器群中，包含两个以上并联支路，各个并联支路中包含两个以上串联的子谐振器；相邻的所述并联支路中的串联连接点之间具有桥接的单个子谐振器或具有桥接的子谐振器群。

Description

一种阻抗比值不同的拆分式谐振器 技术领域
本发明涉及一种谐振器，具体涉及一种阻抗比值不同的拆分式谐振器。
背景技术
利用压电薄膜在厚度方向的纵向谐振所制成的薄膜体波谐振器，在手机通讯和高速串行数据应用等方面已经成为声表面波器件和石英晶体谐振器的一个可行的替代。射频前端体波滤波器/双工器提供优越的滤波特性，例如低插入损耗，陡峭的过渡带，较强的抗静电放电(ESD)能力。随着目前通讯等领域对滤波器和谐振器等电子器件功率容量要求的不断提高，滤波器和谐振器的发热量显著增大。高发热带来的高温会造成器件Q值和机电耦合系数大幅下降；此外高温还会造成由谐振器的频率发生漂移；另外高温还会降低器件整体寿命。以上诸多问题最终导致有谐振器构成的滤波器的性能参数如带宽，插入损耗，滚降特性，带外抑制等发生严重劣化。
应对发热问题的传统手段是增大谐振器的面积。这种方法在一定功率范围内可有效降低谐振器中的功率密度，从而降低谐振器的工作温度。但单纯依靠增加面积的方法已不能满足当前的谐振器对功率容量的要求，需要对传统结构进一步改进。
发明内容
本发明的目的在于提供一种阻抗比值不同的拆分式谐振器，不仅增大了等效面积，而且还能增加谐振器的周长面积比，从而提高谐振器的散热性能和电子器件整体的功率容量。通过桥结构有助于抑制电路的不平衡性所产生的高次谐波，并提高电路抑制非线性效应的能力。
为实现上述目的，本发明提供如下技术方案：
一种阻抗比值不同的拆分式谐振器，所述拆分式谐振器是由多个子谐振器构成的谐振器群；所述谐振器群中，包含两个以上并联支路，各个并联支路中包含两个以上串联的子谐振器；相邻的所述并联支路中的串联连接点之间具有桥接的单个子谐振器或具有桥接的子谐振器群。
可选地，所述桥接的子谐振器群中包含两个以上并联支路，每个该并联支路中包含两个以上串联的子谐振器，相邻的该并联支路中的串联连接点之间具有桥接的单个子谐振器或具有所述桥接的子谐振器群。
可选地，在第一并联支路中：有1个子谐振器被短接，或者有多个不相邻的子谐振器被短接。
可选地，所述谐振器群中包含两个并联支路，其中第一并联支路中包含串联的并且压电层C轴指向相反的第一子谐振器和第二子谐振器，第二并联支路中包含串联的并且压电层C轴指向相反的第三子谐振器和第四子谐振器；在第一子谐振器和第二子谐振器的串联连接点，与第三子谐振器和第四子谐振器的串联连接点之间，跨接有第五子谐振器；第一子谐振器和第三子谐振器的压电层C轴指向相反，二者位于第五子谐振器第一侧；第二子谐振器和第四子谐振器的压电层C轴指向相反，二者位于第五子谐振器第二侧。
可选地，对于所述桥接的单个子谐振器或具有桥接的子谐振器群所构成的桥结构，有：桥结构的一端两侧的、并且位于同一并联支路的子谐振器具有不同的压电层C轴指向；桥结构的同侧的、并且位于不同并联支路的子谐振器具有不同的压电层C轴指向。
可选地，所述多个子谐振器中的各子谐振器之间保持声学隔离。
可选地，两相邻子谐振器的上电极或下电极或压电层的间隙宽度不小于半个声波波长，或者不小于2个声波波长。
可选地，所述拆分式谐振器具有2个引脚，所述2个引脚分别占据第一电位和第二电位；每个所述子谐振器的一侧具有所述第一电位并且另一侧则具有所述第二电位。
可选地，每个所述子谐振器的压电层的C轴由所述第一电位指向所述第二电位，或者由所述第二电位指向所述第一电位。
可选地，所述拆分式谐振器具备2组等电位互联，其中第1组等电位互联由位于第一电位的子谐振器的电极及这些电极之间的电学连接物构成，第2组等电位互联由位于第二电位的子谐振器的电极及这些电极之间的电学连接物构成。
可选地，所述上电极与所述下电极由金属、金属的多层复合材料或合金制成。
可选地，所述金属包括以下至少之一：钼、钌、金、镁、铝、钨、钛、铬、铱、锇、铂、镓、锗。
可选地，所述压电层材料包括：氮化铝，氧化锌，钛锆酸铅，铌酸锂，以及掺有一定比例稀土元素的上述材料。
根据本发明的技术方案，将电子器件中传统的单一谐振器分裂成若干个多边形子谐振器构成的多边形谐振器群，增加桥结构来抑制高次谐波，不仅增大了等效面积，而且还能增加谐振器的周长面积比，从而提高谐振器的散热性能和电子器件整体的功率容量。拆分式谐振 器的另一个优点是有助于使得谐振器布局更为紧凑，从而合理利用空间，缩减器件尺寸。本发明中的桥结构在其两端不同的电压频率下有不同的运行模式，都有助于提高电路的平衡性，从而有助于对高次谐波进行抑制。
附图说明
附图用于更好地理解本发明，不构成对本发明的不当限定。其中：
图1A是根据本发明实施方式的第一种拆分式谐振器的结构的示意图；
图1B是根据本发明实施方式的第一种拆分式谐振器的电路图；
图2是根据本发明实施方式的另一种拆分式谐振器的电路图；
图3是根据本发明实施方式的又一种拆分式谐振器的示意图；
图4是根据本发明实施方式的又一种拆分式谐振器的示意图；
图5是根据本发明实施方式的又一种拆分式谐振器的示意图；
图6是根据本发明实施方式的又一种拆分式谐振器的示意图；
图7是与本发明有关的等电位连接和C轴指向关系的说明图；
图8是根据本发明实施方式的桥结构的阻抗与电压频率的变化关系的示意图；
图9A是根据本发明实施方式的拆分式谐振器中的桥结构为短路状态时的等效电路图；
图9B是根据本发明实施方式的拆分式谐振器中的桥结构为断路状态时的等效电路图。
具体实施方式
以下为本发明的较佳实施方式，但并不因此而限定本发明的保护范围。
图1A是根据本发明实施方式的第一种拆分式谐振器的结构的示意图。如图1A所示，在本发明实施方式中，将传统的单一谐振器分裂为5个子谐振器，5个子谐振器分别是图中的第一谐振器R101、第二 谐振器R102、第三谐振器R103、第四谐振器R104和第五谐振器R105。
图1A给出了5谐振器的具体连接方式，以下具体加以说明。
第一谐振器R101的上电极具有引脚C100，且第一谐振器R101的上电极与第二谐振器R102的上电极发生电学连接C101；第一谐振器R101的下电极与第五谐振器R105的下电极发生电学连接C103；第二谐振器R102的下电极与第五谐振器R105的上电极发生电学连接C105；第五谐振器R105的下电极与第三谐振器R103的下电极发生电学连接C104；第五谐振器R105的上电极与第四谐振器R104的下电极发生电学连接C106；第三谐振器R103的上电极与第四谐振器R104的上电极发生电学连接C102，第四谐振器R104的上电极具有引脚C107。
此处需要说明的是，每两个相邻谐振器之间至多只存在电学连接，而声学上保持隔离。相邻的两个子谐振器的上电极-上电极之间，下电极-下电极之间以及压电层-压电层之间，至少有一处是不相连的，这两个子谐振器即保持声学隔离。例如，当上电极-上电极，下电极-下电极之间均存在电学连接时，压电层-压电层就应当断开。
根据上述连接方式，可以得出其电路图为图1B所示，图1B是根据本发明实施方式的第一种拆分式谐振器的电路图。从图1B可以看出，R101和R103串联成为第一支路，R102和R104串联成为第二支路，第一支路和第二支路之间是并联的关系，所以可将该第一支路称作第一并联支路，该第二支路称作第二并联支路。另外根据图1B，第一和第二并联支路中的串联连接点之间桥接有R105。
图2是根据本发明实施方式的另一种拆分式谐振器的电路图。如图2所示，拆分式谐振器包含R201-R208这8个子谐振器，其中R201、R203、R205串联构成第一条并联支路，R202、R204、R206串联构成第二条并联支路，两条并联支路中间桥接有R207和R208。
图2所示的拆分式谐振器分裂原则为等效阻抗分裂，即确保分裂后谐振器群的等效阻抗等同于原单一谐振器的阻抗(例如50Ω)。同时，在实际情况中，出于工艺缺陷或设计需要等各方面的原因，存在其他类型的“阻抗比值不同”，即谐振器R201阻抗除以谐振器R203与R205的阻抗之和得到的比值，通常不等于谐振器R202阻抗除以谐振器R204与R206的阻抗之和得到的比值，即系统的对称性不足，可表达为下面的表达式(表达式中的Z201表示子谐振器R201的阻抗，其余类似)：
Z201/(Z203+Z205)≠Z202/(Z204+Z206)
类似地，另一种不等于的关系为如下表达式：
(Z201+Z203)/Z205≠(Z202+Z204)/Z206
以上描述的系统的对称性不足，会使电路中产生大量的高次谐波，造成系统性能下滑。
通过加入桥结构R207和R208，可以改善系统的对称性，从而对高次谐波起到抑制作用。桥结构的两端的位置的选择(即选择在哪两个串联的子谐振器之间)，是根据能使得桥结构第一端两侧的阻抗比与桥结构第二端两侧的阻抗比之间的差异所带来的影响被减小这一原则来定。这里的“两侧的阻抗比”，应理解为这两侧中的第一侧的阻抗之和，与这两侧中的第二侧的阻抗之和的比值。根据这个原理，一条并联支路中的上述第一侧的子谐振器的数量可以不同于另一条并联支路中的上述第一侧的子谐振器的数量，该数量相同的情况即例如图1B和图2所示，而该数量不同的情况即例如图3所示，图3是根据本发明实施方式的又一种拆分式谐振器的示意图，如图3所示，桥结构中的R507，是为了减小Z501/(Z503+Z505)与Z502/(Z504+Z506)之间的差值带来的影响。类似地，可选择添加图中的R508，是针对(Z501+Z503)/Z505与(Z502+Z504)/Z506之间的差异。其他各图中亦如此，即有些桥结构是可以选择省略的。
对于图2所示的拆分式谐振器，还可以变化，例如可以移除R202 和R206，将原本为谐振器的位置用导线短接；或移除R204，将原本为谐振器的位置用导线短接。即某个并联支路中，可以有1个或不相邻的多个子谐振器被短接。
图4是根据本发明实施方式的又一种拆分式谐振器的示意图，如图4所示，其包含3条并联支路，每条并联支路中有2个子谐振器，有2个桥接的子谐振器。
图5是根据本发明实施方式的又一种拆分式谐振器的示意图，如图5所示，其包含3条并联支路，每条并联支路中有3个串联的子谐振器，因此最多可置有4个桥接的子谐振器，如图中所示。
此外，对于上述的桥接的子谐振器，可以用子谐振器群来代替，该子谐振器群是多个子谐振器的串并联形式，同样地为了减小上述的阻抗比值不同带来的不利影响，该子谐振器群中同样可包含桥结构，例如图6所示，图6是根据本发明实施方式的又一种拆分式谐振器的示意图。图6中的谐振器B600，在图中示出了其可选的一种形式，也可以采用本发明实施方式中的其他拆分式谐振器的形式。而且更进一步而言，图6中的谐振器群B600(其包含R605-R609)还可以是谐振器群，并且可以是包含本发明实施方式中的桥结构，可以看出这是一种循环方式，形成了“分形”的结构。
图7是与本发明有关的等电位连接和C轴指向关系的说明图。
如图7所示，Rsub1-Rsub4分别具有上电极EH1-EH4，下电极EL1-EL4以及压电层A1-A4；4个子谐振器的压电层分别具有C轴指向C1-C4。子谐振器的电极之间由导体(实线F1，F2和F3以及虚线D1，D2和D3)进行等电位连接。
其中EH1-F1-EL2-F2-EH3-F3-EH4形成1组等电位连接(这里称为 A)，而EL1-D1-EH2-D2-EL3-D3-EL4形成另一组等电位连接(称为B)。若A占据第1电位，那么B占据第2电位。当等电位连接确立之后，A中的所有被连接的电极全部具有第1电位，相应的，B中所有被连接的电极都具有第2电位。
当涉及某一子谐振器与其他子谐振器压电层的C轴指向关系时，是参照电位来说的。例如，尽管Rsub1和Rsub2的C轴(C1和C2)在图中具有相同的几何指向，然而通过对电位进行参考可知C1由第2电位指向第1电位，而C2由第1电位指向第2电位，因此在电位意义下C1和C2是反向的。同理，图中几何方向相反的C2和C3，在电位意义下却是同向的。而C3和C4在电位意义下的关系，较前面两个例子就容易判断(C3和C4在电位意义下是相反的)。
结合上述说明，在本发明的实施方式中，拆分式谐振器具有2个引脚，该2个引脚分别占据第一电位和第二电位。每个子谐振器的一侧具有上述第一电位并且另一侧则具有上述第二电位。即每个分裂谐振器都只包含两组等电位连接。每个子谐振器的压电层的C轴由上述第一电位指向上述第二电位，或者由上述第二电位指向上述第一电位。其中至少1个子谐振器压电层的C轴指向与其余子谐振器中至少一个的压电层C轴指向相反。
本发明实施方式中，谐振器分裂原则为等效阻抗分裂，即确保分裂后谐振器群的等效阻抗等同于原单一谐振器的阻抗(例如50Ω)。同时，在实际情况中，出于工艺缺陷或设计需要等各方面的原因，各并联支路中的谐振器的阻抗比值不同，即所谓的“阻抗比值不同”，具体而言，以图1A和图1B为例，第一谐振器R101和第三谐振器R103的阻抗比值通常不等于第二谐振器R102和第四谐振器R104的阻抗比值。发明人在实现本发明的过程中发现，上述的阻抗比值不同会使系统产生大量的高次谐波。因此在本发明实施方式中，提出桥结构以增强系统电学平衡性或者叫对称性，从而尽可能地减小上述的阻抗比值 不同所带来的影响。下面对此再作进一步说明。
参考图1B所示，拆分式谐振器的两个引脚端分别具有电位P1和电位P2，并且在R101和R103之间具有电位p3，在R102和R104之间具有电位p4。
通常由于工艺的缺陷或出于特殊技术目的进行的结构设计，会导致R101和R103的阻抗比值不等于R102和R104的阻抗比值，这使得电位P3的值不等于电位P4的值，从而导致P3和P4之间形成电位差，即电压。这样，当P3和P4之间具有桥结构R105时，R105将被施加有电压，R105的阻抗和施加于其上的电压的频率呈图8的变化关系，图8是根据本发明实施方式的桥结构的阻抗与电压频率的变化关系的示意图。其中横坐标表示频率，纵坐标表示桥结构的阻抗的模值。
当施加在R105两端的电压频率为R105的串联谐振频率fs时，R105阻抗模值具有最小值Zs；当电压频率为R105的并联谐振频率fp时，R105的阻抗模值具有最大值Zp。
当R105具有阻抗Zs时，可认为R105处为短路状态，此时图1B的电路转化为图9A所示的电路。图9A是根据本发明实施方式的拆分式谐振器中的桥结构为短路状态时的等效电路图。
在图9A所示的拆分谐振器电路中，子谐振器R101和R102处于并联关系，子谐振器R103和R104处于并联关系；同时R101和R102的C轴指向在电位意义下相反，而R103和R104的C轴指向在电位意义下相反。通过上述桥结构可有助于抑制R101和R102形成及R103和R104形成的并联结构中的高次谐波，各子谐振器的压电层的上述C轴指向的选择可进一步提高该抑制效果。
当R105具有阻抗Zp时，可认为R105处为断路状态，此时图1B 的电路转化为图9B所示的电路。图9B是根据本发明实施方式的拆分式谐振器中的桥结构为断路状态时的等效电路图。
在图9B所示的拆分谐振器电路中，子谐振器R101和R103处于串联关系，子谐振器R102和R104处于串联关系；同时R101和R103的C轴指向在电位意义下相反，而R102和R104的C轴指向在电位意义下相反。通过上述结构可有助于抑制R101和R103形成及R102和R104形成的串联结构中的高次谐波。
当R105两端施加的电压处于其他频率时，拆分谐振器的电路则处于图9A和图9B的叠加状态。由于通过拆分谐振器的信号通常具有一定的带宽，即具有连续或离散分布的多种频率成分，因此图1B中的电路能够充分利用图9A和图9B所示的两种模式来减小电路中的高次谐波，从而提高电路的平衡性和抑制非线性效应的能力。
推广到一般情况，通过选择各子谐振器的压电层C轴指向，可以利用类似于上述的图9A和图9B所示的两种模式，即桥结构的等效短路或断路的模式来帮助抑制电路中的高次谐波。这里的桥结构可以是例如R105等单独的子谐振器，也可以是例如B600这样的子谐振器群。桥结构的一端两侧的、并且位于同一并联支路的子谐振器具有不同的压电层C轴指向。例如图1B所示，R105一端p3两侧的R101和R103具有不同的压电层C轴指向，图中用箭头标明。桥结构的同侧的、并且位于不同并联支路的子谐振器具有不同的压电层C轴指向。例如图1B所示，R105左侧的R101和R102有不同的压电层C轴指向，图中用箭头标明。图2至图6中同样用箭头标明了子谐振器压电层C轴指向，其中的桥结构都有助于抑制电路中的高次谐波。
在本发明的实施方式中，分裂后的相邻子谐振器的电极间或压电层间的间隙值不小于两个声波波长，优选范围不小于半个声波波长。
在本发明的实施方式中，上电极和下电极的材料可从以下金属中选择：钼、钌、金、镁、铝、钨、钛、铬、铱、锇、铂、镓、锗。
压电层材料可选自：氮化铝，氧化锌，钛锆酸铅，铌酸锂，以及掺有一定比例稀土元素的上述材料。所述压电材料为厚度小于10微米的薄膜，并具有单晶或多晶结构，采用溅射(Sputtering)或沉积工艺制成。
上述具体实施方式，并不构成对本发明保护范围的限制。本领域技术人员应该明白的是，取决于设计要求和其他因素，可以发生各种各样的修改、组合、子组合和替代。任何在本发明的精神和原则之内所作的修改、等同替换和改进等，均应包含在本发明保护范围之内。

Claims (13)

  1. 一种阻抗比值不同的拆分式谐振器，其特征在于：
    所述拆分式谐振器是由多个子谐振器构成的谐振器群；
    所述谐振器群中，包含两个以上并联支路，各个并联支路中包含两个以上串联的子谐振器；
    相邻的所述并联支路中的串联连接点之间具有桥接的单个子谐振器或具有桥接的子谐振器群。
  2. 根据权利要求1所述的拆分式谐振器，其特征在于，
    所述桥接的子谐振器群中包含两个以上并联支路，每个该并联支路中包含两个以上串联的子谐振器，相邻的该并联支路中的串联连接点之间具有桥接的单个子谐振器或具有所述桥接的子谐振器群。
  3. 根据权利要求1所述的拆分式谐振器，其特征在于，在第一并联支路中：有1个子谐振器被短接，或者有多个不相邻的子谐振器被短接。
  4. 根据权利要求1所述的拆分式谐振器，其特征在于，
    所述谐振器群中包含两个并联支路，其中第一并联支路中包含串联的并且压电层C轴指向相反的第一子谐振器和第二子谐振器，第二并联支路中包含串联的并且压电层C轴指向相反的第三子谐振器和第四子谐振器；
    在第一子谐振器和第二子谐振器的串联连接点，与第三子谐振器和第四子谐振器的串联连接点之间，跨接有第五子谐振器；
    第一子谐振器和第三子谐振器的压电层C轴指向相反，二者位于第五子谐振器第一侧；第二子谐振器和第四子谐振器的压电层C轴指向相反，二者位于第五子谐振器第二侧。
  5. 根据权利要求1所述的拆分式谐振器，其特征在于，对于所述 桥接的单个子谐振器或具有桥接的子谐振器群所构成的桥结构，有：
    桥结构的一端两侧的、并且位于同一并联支路的子谐振器具有不同的压电层C轴指向；
    桥结构的同侧的、并且位于不同并联支路的子谐振器具有不同的压电层C轴指向。
  6. 根据权利要求1至5中任一项所述的拆分式谐振器，其特征在于，所述多个子谐振器中的各子谐振器之间保持声学隔离。
  7. 根据权利要求1至5中任一项所述的拆分式谐振器，其特征在于，两相邻子谐振器的上电极或下电极或压电层的间隙宽度不小于半个声波波长，或者不小于2个声波波长。
  8. 根据权利要求1至5中任一项所述的拆分式谐振器，其特征在于，
    所述拆分式谐振器具有2个引脚，所述2个引脚分别占据第一电位和第二电位；
    每个所述子谐振器的一侧具有所述第一电位并且另一侧则具有所述第二电位。
  9. 根据权利要求8所述的拆分式谐振器，其特征在于，每个所述子谐振器的压电层的C轴由所述第一电位指向所述第二电位，或者由所述第二电位指向所述第一电位。
  10. 根据权利要求1至5中任一项所述的拆分式谐振器，其特征在于，所述拆分式谐振器具备2组等电位互联，其中第1组等电位互联由位于第一电位的子谐振器的电极及这些电极之间的电学连接物构成，第2组等电位互联由位于第二电位的子谐振器的电极及这些电极之间的电学连接物构成。
  11. 根据权利要求1至5中任一项所述的一种拆分式谐振器，其特 征在于：所述上电极与所述下电极由金属、金属的多层复合材料或合金制成。
  12. 根据权利要求1至5中任一项所述的一种拆分式谐振器，其特征在于：所述金属包括以下至少之一：钼、钌、金、镁、铝、钨、钛、铬、铱、锇、铂、镓、锗。
  13. 根据权利要求1至5中任一项所述的一种拆分式谐振器，其特征在于，所述压电层材料包括：氮化铝，氧化锌，钛锆酸铅，铌酸锂，以及掺有一定比例稀土元素的上述材料。
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US12348216B2 (en) * 2021-03-24 2025-07-01 Murata Manufacturing Co., Ltd. Acoustic filters with shared acoustic tracks and cascaded series resonators

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US20080007369A1 (en) * 2006-07-10 2008-01-10 Skyworks Solutions, Inc. Bulk acoustic wave filter with reduced nonlinear signal distortion
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CN106253876A (zh) * 2015-06-09 2016-12-21 太阳诱电株式会社 梯型滤波器、双工器以及模块

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CN104253592A (zh) * 2013-06-27 2014-12-31 太阳诱电株式会社 双工器
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