WO2020147084A1 - Chip packaging structure and electronic device - Google Patents

Chip packaging structure and electronic device Download PDF

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Publication number
WO2020147084A1
WO2020147084A1 PCT/CN2019/072224 CN2019072224W WO2020147084A1 WO 2020147084 A1 WO2020147084 A1 WO 2020147084A1 CN 2019072224 W CN2019072224 W CN 2019072224W WO 2020147084 A1 WO2020147084 A1 WO 2020147084A1
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Prior art keywords
packaging substrate
packaging
chip
substrate
packaging structure
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PCT/CN2019/072224
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French (fr)
Chinese (zh)
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张童龙
蒋尚轩
赵南
郭健炜
胡骁
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华为技术有限公司
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Priority to PCT/CN2019/072224 priority Critical patent/WO2020147084A1/en
Priority to CN201980074859.8A priority patent/CN112997305B/en
Publication of WO2020147084A1 publication Critical patent/WO2020147084A1/en

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    • HELECTRICITY
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    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
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    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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Definitions

  • This application relates to a chip packaging structure, in particular to a chip packaging structure and electronic equipment.
  • a chip packaging structure includes: a first packaging substrate, a semiconductor device, a plurality of first connectors, and a plurality of second connectors.
  • the first packaging substrate has upper and lower surfaces arranged oppositely.
  • the semiconductor device is located on the upper surface of the first packaging substrate and is electrically connected to the first packaging substrate.
  • the transfer component is electrically connected to the PCB, and the transfer component is located on the lower surface of the first packaging substrate and includes at least one second packaging substrate.
  • a plurality of first connecting members are arranged on the lower surface of the first packaging substrate and used for electrically connecting the first packaging substrate and the adapter assembly.
  • the transfer assembly includes at least two stacked second packaging substrates.
  • the adapter assembly further includes a plurality of third connecting members.
  • the third connecting member is located between two adjacent second packaging substrates and is used to electrically connect two adjacent second packaging substrates.
  • the above-mentioned transfer assembly 30 includes at least two stacked second packaging substrates, for example, a second packaging substrate 12a and a second packaging substrate 12b.
  • the effective area 110 is an area on the second packaging substrate 12 for signal transmission.
  • the inactive area 111 is an area on the second packaging substrate 12 that does not require signal transmission.
  • the aforementioned primer 52 may also be provided between the second packaging substrate 12 and the PCB.
  • the structure shown in FIG. 14a is mounted on the upper surface of the second substrate 12 through an SMT process, and a plurality of first connectors 41 are soldered to the upper surface of the second packaging substrate 12 through a reflow process.
  • a plurality of second connecting members 42 are arranged on the lower surface of the second packaging substrate 12.
  • primer 52 is filled between the first packaging substrate 11 and the second packaging substrate 12, and between the second packaging substrate 12 and the PCB, thereby forming a chip packaging structure 01 as shown in FIG. 12 .

Abstract

Disclosed are a chip packaging structure (01) and an electronic device, wherein the chip packaging structure (01) is used for solving the problem of warping during the process of packaging a larger-sized packaging substrate. The chip packaging structure (01) comprises a first packaging substrate (11), a semiconductor device (20), a plurality of first connecting members (41) and a plurality of second connecting members (42), wherein the first packaging substrate (11) has upper and lower surfaces arranged opposite each other; the semiconductor device (20) is located at the upper surface of the first packaging substrate (11), and is electrically connected to the first packaging substrate (11); an adapter assembly (30) is electrically connected to a PCB, and the adapter assembly (30) is located at the lower surface of the first packaging substrate (11), and comprises at least one second packaging substrate (12); and the plurality of first connecting members (41) are arranged at the lower surface of the first packaging substrate (11), and are used for electrically connecting the first packaging substrate (11) to the adapter assembly (30).

Description

芯片封装结构、电子设备Chip packaging structure, electronic equipment 技术领域Technical field
本申请涉及芯片封装结构,尤其涉及芯片封装结构、电子设备。This application relates to a chip packaging structure, in particular to a chip packaging structure and electronic equipment.
背景技术Background technique
随着无线通信、汽车电子和其他消费类电子产品的快速发展,电子器件向着多功能的方向发展。基于此,现有技术在制作上述电子器件时,通常将芯片进行封装,然后再进行集成,并将集成后的部件设置于上述电子器件内。With the rapid development of wireless communications, automotive electronics and other consumer electronic products, electronic devices are developing in the direction of multi-function. Based on this, in the prior art, when manufacturing the above-mentioned electronic device, the chip is usually packaged and then integrated, and the integrated components are arranged in the above-mentioned electronic device.
随着芯片功能的不断增多,芯片的输入/输出(input/output,I/O)引脚不断增多,从而使得用于承载芯片的封装基板的尺寸进一步增大。在此情况下,较大尺寸的封装基板容易产生翘曲(warpage),从而对表面贴装工艺(surface mount technology,SMT)产生较大的负面影响,降低SMT工艺的质量。此外,上述翘曲现象的增大也会导致板级(board level,BL)焊点可靠性降低的问题。With the continuous increase of chip functions, the input/output (I/O) pins of the chip continue to increase, which further increases the size of the package substrate used to carry the chip. In this case, a larger-sized package substrate is prone to warpage (warpage), which will have a greater negative impact on the surface mount technology (SMT) and reduce the quality of the SMT process. In addition, the increase in the above-mentioned warping phenomenon will also cause the problem of reduced reliability of the board level (BL) solder joints.
发明内容Summary of the invention
本发明实施例提供一种芯片封装结构、电子设备,用于解决了较大尺寸的封装基板封装过程中发生翘曲问题与板级焊点可靠性问题。The embodiments of the present invention provide a chip packaging structure and electronic equipment, which are used to solve the problem of warpage and board-level solder joint reliability during packaging of a larger-size packaging substrate.
为达到上述目的,本申请实施例采用如下技术方案:In order to achieve the foregoing objectives, the following technical solutions are adopted in the embodiments of the present application:
本申请实施例的一方面,提供一种芯片封装结构。该芯片封装结构包括:第一封装基板、半导体器件、多个第一连接件、多个第二连接件。其中,第一封装基板具有相对设置的上、下表面。半导体器件位于第一封装基板的上表面,且与第一封装基板电连接。转接组件与PCB电连接,该转接组件位于第一封装基板的下表面,且包括至少一个第二封装基板。多个第一连接件排布于第一封装基板的下表面,用于将第一封装基板与转接组件电连接。通过在第一封装基板与PCB之间设置上述第二封装基板,可以在不增加第一连接件尺寸的情况下,使得第一封装基板与PCB之间的间距增大,从而使得第一封装基板与PCB之间的应力得到了缓冲。在此情况下能够在较大尺寸的封装基板封装过程中,减小由于第一封装基板与PCB之间应力较大而引起的翘曲现象发生的几率,从而提高SMT工艺的质量和板级焊点的可靠性。In one aspect of the embodiments of the present application, a chip packaging structure is provided. The chip packaging structure includes: a first packaging substrate, a semiconductor device, a plurality of first connectors, and a plurality of second connectors. Wherein, the first packaging substrate has upper and lower surfaces arranged oppositely. The semiconductor device is located on the upper surface of the first packaging substrate and is electrically connected to the first packaging substrate. The transfer component is electrically connected to the PCB, and the transfer component is located on the lower surface of the first packaging substrate and includes at least one second packaging substrate. A plurality of first connecting members are arranged on the lower surface of the first packaging substrate and used for electrically connecting the first packaging substrate and the adapter assembly. By disposing the above-mentioned second packaging substrate between the first packaging substrate and the PCB, the distance between the first packaging substrate and the PCB can be increased without increasing the size of the first connector, thereby making the first packaging substrate The stress with the PCB is buffered. In this case, it is possible to reduce the probability of warpage caused by the large stress between the first packaging substrate and the PCB during the packaging process of the larger-size packaging substrate, thereby improving the quality of the SMT process and the board-level welding Reliability of points.
在本申请的一些实施例中,转接组件包括至少两个层叠的第二封装基板。此外,转接组件还包括多个第三连接件。第三连接件位于相邻两个第二封装基板之间,且用于将相邻两个第二封装基板电连接。这样一来,在满足芯片封装结构的外形设计尺寸要求的情况下,通过增加转接组件中第二封装基板的数量,可以进一步增加第一封装基板和PCB之间的距离,以达到缓解第一封装基板和PCB之间应力的目的。In some embodiments of the present application, the transfer assembly includes at least two stacked second packaging substrates. In addition, the adapter assembly further includes a plurality of third connecting members. The third connecting member is located between two adjacent second packaging substrates and is used to electrically connect two adjacent second packaging substrates. In this way, while meeting the requirements of the external design and size of the chip packaging structure, by increasing the number of second packaging substrates in the transfer assembly, the distance between the first packaging substrate and the PCB can be further increased, so as to relieve the first The purpose of the stress between the package substrate and the PCB.
在本申请的一些实施例中,转接组件中的至少两个层叠的第二封装基板的热膨胀系数相同。In some embodiments of the present application, the thermal expansion coefficients of at least two stacked second packaging substrates in the transition assembly are the same.
在本申请的一些实施例中,沿第一封装基板到印刷电路板的方向,转接组件中的至少两个层叠的第二封装基板的热膨胀系数依次增大。In some embodiments of the present application, along the direction from the first packaging substrate to the printed circuit board, the thermal expansion coefficients of the at least two stacked second packaging substrates in the transition assembly increase sequentially.
在本申请的一些实施例中,芯片封装结构包括至少两个并排的转接组件。不同的转接组件与第一封装基板下表面电连接的区域不同。此外,任意相邻两个转接组件具有相同数量的第二封装基板。相邻两个位于不同的转接组件中的第二封装基板之间具有间隙。这样一来,相对于与第二封装基板尺寸相当的第二封装基板而言,每个第二封装基板的尺寸有所减小,从而能够有效降低每个第二封装基板在SMT工艺中,发生翘曲的几率。In some embodiments of the present application, the chip package structure includes at least two interconnecting components side by side. Different transition components are electrically connected to the lower surface of the first packaging substrate in different areas. In addition, any two adjacent transfer components have the same number of second packaging substrates. There is a gap between two adjacent second packaging substrates in different transfer assemblies. In this way, the size of each second packaging substrate is reduced compared to the second packaging substrate with the same size as the second packaging substrate, which can effectively reduce the occurrence of each second packaging substrate in the SMT process. The chance of warping.
在本申请的一些实施例中,第二封装基板的热膨胀系数大于第一封装基板的热膨胀系数,小于印刷电路板的热膨胀系数。综上所述,通过在第一封装基板与之间设置上述第二封装基板,可以在不增加第一连接件尺寸的情况下,使得第一封装基板与PCB之间的间距增大。此外,由于上述第二封装基板的CTE位于第一封装基板的CTE与PCB的CTE之间,因此第一封装基板与第二封装基板之间的CTE差异较小,第二封装基板与PCB之间的CTE差异较小。在此情况下,第一封装基板与第二封装基板之间具有较小的应力。第二封装基板与PCB之间具有较小的应力。从而在第二封装基板的作用下,使得第一封装基板与PCB之间的应力得到了缓冲。通过SMT工艺将第一封装基板贴装于上述第二封装基板时,由于第一封装基板与第二封装基板之间的应力较小,因此第一封装基板发生翘曲的现象得到了一定程度的缓解。此外,通过SMT工艺在将第二封装基板贴装于PCB时,由于第二封装基板与PCB之间的应力较小,第二封装基板发生翘曲的现象也得到了一定的缓解。这样一来,使得SMT工艺中对封装翘曲的容仍度得到有效提升。或者,在SMT工艺完成后,进入温循测试的过程中,由于第一封装基板与第二封装基板之间的应力较小,因此会减小排布于第一封装基板下表面的第一连接件发生开裂的几率。此外,在上述温循测试过程中,由于第二封装基板与PCB之间的应力较小,因此会减小排布于第二封装基板下表面的第二连接件发生开裂的几率。达到提高芯片封装结构质量的目的。In some embodiments of the present application, the thermal expansion coefficient of the second packaging substrate is greater than the thermal expansion coefficient of the first packaging substrate, and is smaller than the thermal expansion coefficient of the printed circuit board. In summary, by arranging the second packaging substrate between the first packaging substrate and the second packaging substrate, the distance between the first packaging substrate and the PCB can be increased without increasing the size of the first connector. In addition, since the CTE of the second packaging substrate is located between the CTE of the first packaging substrate and the CTE of the PCB, the difference in CTE between the first packaging substrate and the second packaging substrate is small, and the difference between the second packaging substrate and the PCB The CTE difference is small. In this case, there is less stress between the first packaging substrate and the second packaging substrate. There is less stress between the second packaging substrate and the PCB. Therefore, under the action of the second packaging substrate, the stress between the first packaging substrate and the PCB is buffered. When the first packaging substrate is mounted on the second packaging substrate through the SMT process, since the stress between the first packaging substrate and the second packaging substrate is small, the warpage of the first packaging substrate is reduced to a certain extent ease. In addition, when the second packaging substrate is mounted on the PCB through the SMT process, since the stress between the second packaging substrate and the PCB is small, the warpage of the second packaging substrate is also relieved to a certain extent. In this way, the tolerance to package warpage in the SMT process is effectively improved. Or, after the SMT process is completed, in the process of entering the temperature cycle test, since the stress between the first packaging substrate and the second packaging substrate is small, the first connections arranged on the lower surface of the first packaging substrate will be reduced. The chance of cracking. In addition, in the above-mentioned temperature cycling test process, since the stress between the second packaging substrate and the PCB is relatively small, the probability of cracking of the second connectors arranged on the lower surface of the second packaging substrate is reduced. To achieve the purpose of improving the quality of the chip packaging structure.
在本申请的一些实施例中,第二封装基板包括至少一层绝缘载板、以及位于绝缘载板上、下表面的金属布线。此外,绝缘载板上设置有导通孔,导通孔用于将绝缘载板上、下表面的金属布线电连接。具有上述结构的第二封装基板能够对第一封装基板与PCB之间的应力进行缓解。无需对对芯片封装结构的尺寸、形状以及引脚数量、间距、长度等进行调节。In some embodiments of the present application, the second packaging substrate includes at least one layer of insulating carrier, and metal wiring on and on the lower surface of the insulating carrier. In addition, the insulating carrier board is provided with via holes, and the via holes are used to electrically connect the metal wiring on the insulating carrier board and the lower surface. The second packaging substrate having the above structure can relieve the stress between the first packaging substrate and the PCB. There is no need to adjust the size, shape, number of pins, pitch, and length of the chip package structure.
在本申请的一些实施例中,芯片封装结构还包括多个第二连接件,排布于转接组件的下表面,用于将转接组件与印刷电路板电连接。一个第一连接件通过绝缘载板上的导通孔,与一个第二连接件电连接。这样一来,可以简化第二封装基板中金属布线的排布,从而达到简化第二封装基板制作工艺的目的。In some embodiments of the present application, the chip packaging structure further includes a plurality of second connecting members arranged on the lower surface of the adapter assembly for electrically connecting the adapter assembly with the printed circuit board. A first connecting piece is electrically connected to a second connecting piece through a through hole on the insulating carrier board. In this way, the arrangement of the metal wiring in the second packaging substrate can be simplified, thereby achieving the purpose of simplifying the manufacturing process of the second packaging substrate.
在本申请的一些实施例中,绝缘载板的上、下表面包括有效区和非有效区。金属布线位于有效区。此外,第二封装基板还包括覆盖非有效区的金属膜;金属膜与金属布线断开。这样一来,通过在第二封装基板上设置上述金属膜,能够增加第二封装基板的CTE。In some embodiments of the present application, the upper and lower surfaces of the insulating carrier board include effective areas and ineffective areas. The metal wiring is located in the effective area. In addition, the second packaging substrate further includes a metal film covering the inactive area; the metal film is disconnected from the metal wiring. In this way, by providing the metal film on the second packaging substrate, the CTE of the second packaging substrate can be increased.
在本申请的一些实施例中,金属膜与金属布线的材料相同,从而达到简化第二封装基板的制作工艺的目的。In some embodiments of the present application, the metal film and the metal wiring are made of the same material, so as to achieve the purpose of simplifying the manufacturing process of the second packaging substrate.
在本申请的一些实施例中,第一连接件和第二连接件为焊球或凸块。In some embodiments of the present application, the first connecting member and the second connecting member are solder balls or bumps.
在本申请的一些实施例中,半导体器件包括裸芯片和多个第四连接件。上述多个第四连接件,排布于裸芯片的有源面,用于将裸芯片与第一封装基板电连接。在此情况下,该半导体器件为单颗裸芯片合封的结构。在其他一些实施例中,所述半导体器件也可以为将一个或多个裸芯片封装得到的芯片实体。In some embodiments of the present application, the semiconductor device includes a bare chip and a plurality of fourth connectors. The above-mentioned multiple fourth connecting members are arranged on the active surface of the bare chip and are used to electrically connect the bare chip with the first packaging substrate. In this case, the semiconductor device is a single bare chip sealed structure. In some other embodiments, the semiconductor device may also be a chip entity obtained by packaging one or more bare chips.
在本申请的一些实施例中,半导体器件包括至少两个裸芯片、转接板、多个第四连接件以及多个第五连接件。其中,转接板用于承载至少两个裸芯片。多个第四连接件排布于裸芯片的有源面,用于将至少两个裸芯片与转接板电连接。多个第五连接件,排布于转接板的下表面,用于将转接板与第一封装基板电连接。In some embodiments of the present application, the semiconductor device includes at least two bare chips, an interposer board, multiple fourth connectors, and multiple fifth connectors. Among them, the transfer board is used to carry at least two bare chips. A plurality of fourth connecting members are arranged on the active surface of the bare chip and are used for electrically connecting at least two bare chips with the adapter board. A plurality of fifth connecting members are arranged on the lower surface of the transfer board and are used for electrically connecting the transfer board and the first packaging substrate.
在本申请的一些实施例中,芯片封装结构还包括散热胶结合胶、散热盖以及底胶。其中,散热胶结合胶覆盖半导体器件。散热盖覆盖散热胶结合胶,并于第一封装基板相接触。底胶设置于半导体器件与第一封装基板之间,以及第一封装基板和与第一封装基板相邻的第二封装基板之间。In some embodiments of the present application, the chip packaging structure further includes a heat dissipation glue bonding glue, a heat dissipation cover, and a primer. Wherein, the heat dissipation adhesive bonding adhesive covers the semiconductor device. The heat dissipation cover covers the heat dissipation glue bonding glue and is in contact with the first packaging substrate. The primer is arranged between the semiconductor device and the first packaging substrate, and between the first packaging substrate and the second packaging substrate adjacent to the first packaging substrate.
本申请实施例的另一方面提供一种电子设备,包括如上所述的任意一种芯片封装结构。该芯片封装结构中的转接组件与印刷电路板电连接。上述电子设备具有与前述实施例提供的电子设备相同的技术效果,此处不再赘述。Another aspect of the embodiments of the present application provides an electronic device including any chip packaging structure described above. The transfer component in the chip packaging structure is electrically connected with the printed circuit board. The above-mentioned electronic device has the same technical effect as the electronic device provided in the foregoing embodiment, and will not be repeated here.
附图说明BRIEF DESCRIPTION
图1为本申请的一些实施例,提供的一种芯片封装结构的示意图;FIG. 1 is a schematic diagram of a chip packaging structure provided by some embodiments of the application;
图2为本申请的一些实施例,提供的一种封装基板与PCB的应力梯度示意图;2 is a schematic diagram of the stress gradient between a package substrate and a PCB provided by some embodiments of the application;
图3为图2所示的结构中,封装基板发生翘曲的示意图;FIG. 3 is a schematic diagram of the package substrate warping in the structure shown in FIG. 2;
图4为图1中第二封装基板的一种结构示意图;4 is a schematic diagram of a structure of the second packaging substrate in FIG. 1;
图5为图1中第二封装基板的另一种结构示意图;5 is a schematic diagram of another structure of the second packaging substrate in FIG. 1;
图6为本申请的一些实施例,提供的另一种封装基板与PCB的应力梯度示意图;FIG. 6 is a schematic diagram of another stress gradient between a package substrate and a PCB provided by some embodiments of the application;
图7为图6所示的结构中,封装基板发生翘曲的示意图;FIG. 7 is a schematic diagram of the package substrate warping in the structure shown in FIG. 6;
图8为本申请的一些实施例,提供的一种芯片封装结构的示意图;FIG. 8 is a schematic diagram of a chip packaging structure provided by some embodiments of the application;
图9为图1中第二封装基板的另一种结构示意图;FIG. 9 is a schematic diagram of another structure of the second packaging substrate in FIG. 1;
图10为本申请的一些实施例,提供的一种芯片封装结构的示意图;FIG. 10 is a schematic diagram of a chip packaging structure provided by some embodiments of the application;
图11为本申请的一些实施例,提供的一种芯片封装结构的示意图;FIG. 11 is a schematic diagram of a chip packaging structure provided by some embodiments of the application;
图12为本申请的一些实施例,提供的一种芯片封装结构的示意图;FIG. 12 is a schematic diagram of a chip packaging structure provided by some embodiments of the application;
图13为本申请的一些实施例,提供的一种芯片封装结构的示意图;FIG. 13 is a schematic diagram of a chip packaging structure provided by some embodiments of the application;
图14a、图14b、图14c以及图14d为本申请的一些实施例,提供的一种芯片封装结构的制作方法对应的各个阶段的结构示意图;14a, FIG. 14b, FIG. 14c, and FIG. 14d are schematic structural diagrams of various stages corresponding to a manufacturing method of a chip package structure provided by some embodiments of the application;
图15a、图15b、图15c为本申请的一些实施例,提供的另一种芯片封装结构的制作方法对应的各个阶段的结构示意图;15a, 15b, and 15c are schematic diagrams of various stages corresponding to the manufacturing method of another chip packaging structure provided by some embodiments of the application;
图16a、图16b、图16c为本申请的一些实施例,提供的另一种芯片封装结构的制作方法对应的各个阶段的结构示意图。16a, FIG. 16b, and FIG. 16c are schematic diagrams of various stages corresponding to the manufacturing method of another chip packaging structure provided by some embodiments of the application.
附图标记:Reference mark:
01-芯片封装结构;11-第一封装基板;12-第二封装基板;100-绝缘载板;101-金属布线;102-导通孔;103-粘接层;104-金属膜;110-有效区;111-非有效区;20-半导体器件;201-裸芯片;30-转接组件;41-第一连接件;42-第二连接件;43-第三连接件; 44-第四连接件;45-第五连接件;50-散热胶结合胶;51-散热盖;52-底胶;60-转接板。01-Chip packaging structure; 11-first packaging substrate; 12-second packaging substrate; 100-insulating carrier board; 101-metal wiring; 102-via; 103-adhesive layer; 104-metal film; 110- Active area; 111-inactive area; 20-semiconductor device; 201-bare chip; 30-transition component; 41-first connector; 42-second connector; 43-third connector; 44-fourth Connecting piece; 45-Fifth connecting piece; 50- Heat-dissipating glue bonding glue; 51- Heat-dissipating cover; 52- Bottom glue; 60- Adapter plate.
具体实施方式detailed description
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。The following describes the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments.
本文中,术语“第一”、“第二”等仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中,除非另有说明,“多个”的含义是两个或两个以上。Herein, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise stated, "plurality" means two or more.
此外,本文中,“上”、“下”等方位术语是相对于附图中的显示面板示意置放的方位来定义的,应当理解到,这些方向性术语是相对的概念,它们用于相对于的描述和澄清,其可以根据显示面板所放置的方位的变化而相应地发生变化。In addition, in this article, the azimuth terms such as "upper" and "lower" are defined with respect to the schematic placement of the display panel in the drawings. It should be understood that these directional terms are relative concepts, and they are used for relative For the description and clarification, it can be changed correspondingly according to the change in the orientation of the display panel.
本申请的实施例提供一种芯片封装结构01,如图1所示,包括:第一封装基板11、半导体器件20。The embodiment of the present application provides a chip packaging structure 01, as shown in FIG. 1, including: a first packaging substrate 11 and a semiconductor device 20.
其中,第一封装基板11具有相对设置的上表面A1和下表面A2。该第一封装基板11的上表面A1用于承载半导体器件20。Wherein, the first packaging substrate 11 has an upper surface A1 and a lower surface A2 which are oppositely arranged. The upper surface A1 of the first packaging substrate 11 is used to carry the semiconductor device 20.
基于此,上述半导体器件20位于第一封装基板11的上表面A1,且与第一封装基板11电连接。Based on this, the aforementioned semiconductor device 20 is located on the upper surface A1 of the first packaging substrate 11 and is electrically connected to the first packaging substrate 11.
第一封装基板11中设置有金属布线构成的电路结构。上述电路结构可以使得第一封装基板11能够对芯片封装结构01的尺寸、形状以及引脚数量、间距、长度等进行调节,进而使得芯片封装结构01便于与印刷电路板(printed circuit board,PCB)相配合。A circuit structure composed of metal wiring is provided in the first package substrate 11. The above circuit structure can enable the first package substrate 11 to adjust the size, shape, pin number, pitch, length, etc. of the chip package structure 01, thereby enabling the chip package structure 01 to be easily integrated with a printed circuit board (PCB) Match.
在此情况下,当第一封装基板11中由上述金属布线形成的电路结构按照设计要求制备好后,第一封装基板11的热膨胀系数(coefficient of thermal expansion,CTE)为一个固定的数值。In this case, when the circuit structure formed by the metal wiring in the first packaging substrate 11 is prepared according to design requirements, the coefficient of thermal expansion (CTE) of the first packaging substrate 11 is a fixed value.
此外,PCB在按照设置要求制备好以后,该PCB的CTE也为一个固定的数值。并且,上述第一封装基板11的CTE与PCB的CTE之间的差异较大。例如,第一封装基板11的CTE为12-14ppm/℃,PCB的CTE可以达到17-20ppm/℃。In addition, after the PCB is prepared according to the setting requirements, the CTE of the PCB is also a fixed value. In addition, the difference between the CTE of the first packaging substrate 11 and the CTE of the PCB is relatively large. For example, the CTE of the first packaging substrate 11 is 12-14 ppm/°C, and the CTE of the PCB can reach 17-20 ppm/°C.
在此情况下,在进行SMT工艺的过程中,如果直接将第一封装基板11贴装于PCB上。如图2所示,第一封装基板11与PCB之间的距离H较小。In this case, during the SMT process, if the first packaging substrate 11 is directly mounted on the PCB. As shown in FIG. 2, the distance H between the first packaging substrate 11 and the PCB is relatively small.
此时,由应力梯度可知,第一封装基板11与PCB之间会产生较大的应力,从而在进行SMT工艺的过程中,在第一封装基板11下表面的焊球或凸块融化的情况下,会导致单边尺寸较大(例如,为75mm)的第一封装基板11,如图3所示产生较大的翘曲。At this time, it can be seen from the stress gradient that a relatively large stress will be generated between the first packaging substrate 11 and the PCB, so that during the SMT process, the solder balls or bumps on the lower surface of the first packaging substrate 11 may melt Under this condition, the first package substrate 11 with a larger one-side size (for example, 75 mm) will cause larger warpage as shown in FIG. 3.
或者,在SMT工艺完成后,并进入温循测试的过程中,第一封装基板11与PCB之间产生的较大的应力会导致第一封装基板11与PCB之间会之间发生失配(miss match),进而使得设置于第一封装基板11下表面的焊球或凸块(bump),发生开裂。降低了芯片封装结构01的质量。Or, after the SMT process is completed and in the process of the warm cycle test, the greater stress generated between the first packaging substrate 11 and the PCB will cause a mismatch between the first packaging substrate 11 and the PCB ( miss match), which in turn causes the solder balls or bumps disposed on the lower surface of the first package substrate 11 to crack. The quality of the chip package structure 01 is reduced.
为了解决上述问题,如图1所示,本申请实施例提供的芯片封装结构01还包括转接组件30、多个第一连接件41。In order to solve the above-mentioned problem, as shown in FIG. 1, the chip packaging structure 01 provided by the embodiment of the present application further includes an adapter assembly 30 and a plurality of first connectors 41.
上述转接组件30位于第一封装基板11的下表面。并且,上述转接组件30包括如图4或图5所示的至少一个第二封装基板12。The above-mentioned adapter assembly 30 is located on the lower surface of the first packaging substrate 11. Moreover, the above-mentioned adapter assembly 30 includes at least one second packaging substrate 12 as shown in FIG. 4 or FIG. 5.
在本申请的一些实施例中,如图4所示,上述第二封装基板12可以包括一层绝缘载板100、以及位于该绝缘载板100上、下表面的金属布线101。In some embodiments of the present application, as shown in FIG. 4, the above-mentioned second packaging substrate 12 may include a layer of insulating carrier 100 and metal wiring 101 located on the upper and lower surfaces of the insulating carrier 100.
上述绝缘载板100上设置有导通孔102。该导通孔102用于将绝缘载板100上、下表面的金属布线101电连接。The above-mentioned insulating carrier board 100 is provided with via holes 102. The via 102 is used to electrically connect the metal wiring 101 on the upper and lower surfaces of the insulating carrier 100.
或者,在本申请的另一些实施例中,如图5所示,上述第二封装基板12可以包括多层上、下表面具有金属布线101的绝缘载板100。相邻两层绝缘载板100之间设置有粘接层103。Alternatively, in other embodiments of the present application, as shown in FIG. 5, the above-mentioned second packaging substrate 12 may include a multilayer insulating carrier 100 with metal wiring 101 on the upper and lower surfaces. An adhesive layer 103 is provided between two adjacent insulating carrier boards 100.
以下为了方便举例,均是以第二封装基板12采用如图2所示的,单层上、下表面具有金属布线101的绝缘载板100为例进行的说明。For the convenience of examples, the following descriptions are made by taking as an example the second packaging substrate 12 adopts the insulating carrier board 100 with metal wiring 101 on the upper and lower surfaces of a single layer as shown in FIG. 2.
此外,上述多个第一连接件41排布于第一封装基板11的下表面,用于将第一封装基板11与转接组件30电连接。In addition, the above-mentioned multiple first connecting members 41 are arranged on the lower surface of the first packaging substrate 11 for electrically connecting the first packaging substrate 11 and the adapter assembly 30.
本申请对转接组件30与PCB电连接的方式不做限定,例如可以在转接组件30上设置用于与PCB电连接的引脚(pin)。The present application does not limit the manner in which the adapter assembly 30 is electrically connected to the PCB. For example, a pin for electrically connecting with the PCB may be provided on the adapter assembly 30.
或者,可以通过引线键合(wired bonding)的方式将转接组件30与PCB电连接。Alternatively, the transfer assembly 30 may be electrically connected to the PCB by means of wired bonding.
又或者,还可以采用SMT工艺将转接组件30贴装于PCB上。在此情况下,上述芯片封装结构01还包括多个第二连接件42。上述多个第二连接件42排布于转接组件30的下表面,用于将该转接组件30与PCB电连接。Alternatively, the transfer assembly 30 can also be mounted on the PCB using the SMT process. In this case, the aforementioned chip package structure 01 further includes a plurality of second connectors 42. The plurality of second connecting members 42 are arranged on the lower surface of the adapter assembly 30 for electrically connecting the adapter assembly 30 and the PCB.
这样一来,上述转接组件30通过多个第一连接件41和多个第二连接件42,将第一封装基板11与PCB电连接,从而使得半导体器件20的信号能够依次通过第一封装基板11、第二封装基板12,然后传递至PCB。In this way, the above-mentioned adapter assembly 30 electrically connects the first package substrate 11 and the PCB through the multiple first connectors 41 and the multiple second connectors 42, so that the signals of the semiconductor device 20 can pass through the first package in turn. The substrate 11 and the second packaging substrate 12 are then transferred to the PCB.
上述第一连接件41和第二连接件42可以为焊球或凸块(bump)。The first connecting member 41 and the second connecting member 42 may be solder balls or bumps.
其中,构成上述焊球的材料可以为焊锡材料(solder),上述焊球可以称为锡球(solder ball)。构成上述凸块的材料可以为低温(小于200℃的)焊料。Wherein, the material constituting the solder ball may be a solder material (solder), and the solder ball may be called a solder ball. The material constituting the above-mentioned bumps may be low temperature (less than 200°C) solder.
这样一来,通过在第一封装基板11与PCB之间设置上述第二封装基板12,可以在不增加第一连接件41尺寸的情况下,如图6所示,使得第一封装基板11与PCB之间的间距H增大,从而由图6所示的应力梯度可知,第一封装基板11与PCB之间的应力得到了缓冲。在此情况下能够在较大尺寸的封装基板封装过程中,减小由于第一封装基板11与PCB之间应力较大而引起的上述翘曲现象发生的几率,从而提高SMT工艺的质量和板级焊点的可靠性。In this way, by disposing the second packaging substrate 12 between the first packaging substrate 11 and the PCB, it is possible to make the first packaging substrate 11 and the first packaging substrate 11 and the PCB not increase the size of the first connector 41 as shown in FIG. The spacing H between PCBs is increased, so that the stress gradient shown in FIG. 6 shows that the stress between the first packaging substrate 11 and the PCB is buffered. In this case, it is possible to reduce the probability of the above-mentioned warping phenomenon caused by the greater stress between the first packaging substrate 11 and the PCB during the packaging process of the larger-size packaging substrate, thereby improving the quality and the board of the SMT process. Reliability of grade solder joints.
在此基础上,当上述第二封装基板12的厚度较大时,可以通过对第二封装基板12的CTE进行限定,以使得第二封装基板12能够减小第一封装基板11与PCB之间的应力。On this basis, when the thickness of the second packaging substrate 12 is relatively large, the CTE of the second packaging substrate 12 can be defined, so that the second packaging substrate 12 can reduce the gap between the first packaging substrate 11 and the PCB. Stress.
例如,本申请的实施例中,上述第二封装基板12的CTE大于第一封装基板11的CTE,小于PCB的CTE。即上述第二封装基板12的CTE位于第一封装基板11的CTE与PCB的CTE之间。For example, in the embodiment of the present application, the CTE of the above-mentioned second packaging substrate 12 is greater than the CTE of the first packaging substrate 11 and smaller than the CTE of the PCB. That is, the CTE of the second packaging substrate 12 is located between the CTE of the first packaging substrate 11 and the CTE of the PCB.
例如,在第一封装基板11的CTE为12ppm/℃,PCB的CTE为20ppm/℃的情况下,上述第二封装基板12的CTE可以为16ppm/℃。For example, when the CTE of the first packaging substrate 11 is 12 ppm/°C and the CTE of the PCB is 20 ppm/°C, the CTE of the second packaging substrate 12 may be 16 ppm/°C.
在此情况下,由应力梯度可知,第一封装基板11与第二封装基板12之间具有较小的应力。第二封装基板12与PCB之间具有较小的应力。从而在第二封装基板12的作用下,使得第一封装基板11与PCB之间的应力得到了缓冲。In this case, it can be known from the stress gradient that there is a relatively small stress between the first packaging substrate 11 and the second packaging substrate 12. There is less stress between the second packaging substrate 12 and the PCB. Thus, under the action of the second packaging substrate 12, the stress between the first packaging substrate 11 and the PCB is buffered.
这样一来,通过SMT工艺将第一封装基板11贴装于上述第二封装基板12时,由于第一封装基板11与第二封装基板12之间的应力较小,因此第一封装基板11发生翘曲的现象,如图7所示,得到了一定程度的缓解。此外,通过SMT工艺在将第二封装基板12贴装于PCB时,由于第二封装基板12与PCB之间的应力较小,第二封装基板12如图7所示,发生翘曲的现象也得到了一定的缓解。这样一来,使得SMT工艺中对封装翘曲的容仍度得到有效提升。In this way, when the first packaging substrate 11 is mounted on the second packaging substrate 12 through the SMT process, since the stress between the first packaging substrate 11 and the second packaging substrate 12 is small, the first packaging substrate 11 is The warpage phenomenon, as shown in Figure 7, has been relieved to a certain extent. In addition, when the second packaging substrate 12 is mounted on the PCB through the SMT process, since the stress between the second packaging substrate 12 and the PCB is relatively small, the second packaging substrate 12 may be warped as shown in FIG. Get a certain relief. In this way, the tolerance to package warpage in the SMT process is effectively improved.
或者,在SMT工艺完成后,进入温循测试的过程中,由于第一封装基板11与第二封装基板12之间的应力较小,因此会减小排布于第一封装基板11下表面A2的第一连接件41发生开裂的几率。此外,在上述温循测试过程中,由于第二封装基板12与PCB之间的应力较小,因此会减小排布于第二封装基板12下表面的第二连接件42发生开裂的几率。达到提高芯片封装结构01质量的目的。Or, after the SMT process is completed, in the process of entering the temperature cycle test, since the stress between the first packaging substrate 11 and the second packaging substrate 12 is relatively small, the arrangement on the lower surface A2 of the first packaging substrate 11 will be reduced. The probability that the first connecting member 41 will crack. In addition, in the above-mentioned temperature cycling test process, since the stress between the second packaging substrate 12 and the PCB is relatively small, the probability of cracking of the second connectors 42 arranged on the lower surface of the second packaging substrate 12 is reduced. To achieve the purpose of improving the quality of the chip packaging structure 01.
在此基础上,由上述可知,转接组件30中的第二封装基板12的目的在于对第一封装基板11与PCB之间的应力进行缓解。无需对芯片封装结构01的尺寸、形状以及引脚数量、间距、长度等进行调节。On this basis, it can be known from the above that the purpose of the second packaging substrate 12 in the adapter assembly 30 is to relieve the stress between the first packaging substrate 11 and the PCB. There is no need to adjust the size, shape, number of pins, pitch, and length of the chip package structure 01.
基于此,如图4或图5所述,在本申请的实施例中,第二封装基板12中的导通孔102可以贯穿该第二封装基板12中所有的绝缘载板100。Based on this, as shown in FIG. 4 or FIG. 5, in the embodiment of the present application, the via hole 102 in the second packaging substrate 12 may penetrate all the insulating carrier boards 100 in the second packaging substrate 12.
在此情况下,如图6所示,一个第一连接件41通过绝缘载板100上的一个导通孔102,与一个第二连接件42电连接。这样一来,可以简化第二封装基板12中金属布线102的排布,从而达到简化第二封装基板12制作工艺的目的。In this case, as shown in FIG. 6, a first connector 41 is electrically connected to a second connector 42 through a through hole 102 on the insulating carrier board 100. In this way, the arrangement of the metal wiring 102 in the second packaging substrate 12 can be simplified, thereby achieving the purpose of simplifying the manufacturing process of the second packaging substrate 12.
上述是以芯片封装结构01中具有一个转接组件30,且该一个转接组件30具有一个第二封装基板12为例,对芯片封装结构01的结构进行的举例说明。以下对具有上述至少一个转接组件30的芯片封装结构01的其他结构进行举例说明。The above is an example of the chip packaging structure 01 having an adapter assembly 30 and the one adapter assembly 30 having a second packaging substrate 12 to illustrate the structure of the chip packaging structure 01. Hereinafter, other structures of the chip package structure 01 having the above-mentioned at least one adapter assembly 30 are described as examples.
示例一Example one
在本示例中,如图8所示,上述转接组件30包括至少两个层叠的第二封装基板,例如,第二封装基板12a和第二封装基板12b。In this example, as shown in FIG. 8, the above-mentioned transfer assembly 30 includes at least two stacked second packaging substrates, for example, a second packaging substrate 12a and a second packaging substrate 12b.
在此基础上,上述转接组件30还包括多个第三连接件43。上述第三连接件43可以为焊球或锡焊凸块。On this basis, the above-mentioned adapter assembly 30 further includes a plurality of third connectors 43. The aforementioned third connecting member 43 may be a solder ball or a solder bump.
上述多个第三连接件43位于相邻两个第二封装基板之间,且用于将相邻两个第二封装基板电连接。例如,上述多个第三连接件43排布于第二封装基板12a的下表面(朝向第二封装基板12b)的表面,并于第二封装基板12b电连接。The plurality of third connecting members 43 are located between two adjacent second packaging substrates, and are used to electrically connect two adjacent second packaging substrates. For example, the aforementioned plurality of third connecting members 43 are arranged on the surface of the lower surface (facing the second packaging substrate 12b) of the second packaging substrate 12a, and are electrically connected to the second packaging substrate 12b.
这样一来,在满足芯片封装结构01的外形设计尺寸要求的情况下,通过增加转接组件30中第二封装基板12的数量,可以进一步增加第一封装基板11和PCB之间的距离,以达到缓解第一封装基板11和PCB之间应力的目的。In this way, while meeting the requirements of the external design and size of the chip packaging structure 01, by increasing the number of the second packaging substrates 12 in the adapter assembly 30, the distance between the first packaging substrate 11 and the PCB can be further increased. The purpose of alleviating the stress between the first packaging substrate 11 and the PCB is achieved.
在本申请的一些实施例中,转接组件30中的多个第二封装基板12的CTE可以相同。In some embodiments of the present application, the CTE of the plurality of second packaging substrates 12 in the transfer assembly 30 may be the same.
或者,在本申请的另一些实施例中,如图8所示,沿第一封装基板11到PCB的 方向(Z方向),转接组件30中的多个第二封装基板12的CTE可以依次递增。Alternatively, in other embodiments of the present application, as shown in FIG. 8, along the direction (Z direction) from the first packaging substrate 11 to the PCB, the CTEs of the multiple second packaging substrates 12 in the transition assembly 30 may be sequentially Increment.
例如,图8中,在第一封装基板11的CTE为12ppm/℃,PCB的CTE为20ppm/℃的情况下,第二封装基板12a的CTE为14/℃,第二封装基板12b的CTE为16ppm/℃。For example, in FIG. 8, when the CTE of the first packaging substrate 11 is 12 ppm/°C and the CTE of the PCB is 20 ppm/°C, the CTE of the second packaging substrate 12a is 14/°C, and the CTE of the second packaging substrate 12b is 16ppm/℃.
本申请对上述转接组件30中的多个第二封装基板12的CTE的其他设置方式不再一一赘述,只要能够保证转接组件30中的任意一个第二封装基板12的CTE位于第一封装基板11的CTE和PCB的CTE之间即可。In the present application, the CTE of the plurality of second packaging substrates 12 in the transition assembly 30 will not be described one by one, as long as it can be ensured that the CTE of any second packaging substrate 12 in the transition assembly 30 is located in the first It suffices to be between the CTE of the package substrate 11 and the CTE of the PCB.
以下对第二封装基板12的CTE的调节方式进行说明。The method of adjusting the CTE of the second packaging substrate 12 will be described below.
在本申请的一些实施例中,如图9所示,第二封装基板12中的绝缘载板100的上、下表面包括有效区110和非有效区111。In some embodiments of the present application, as shown in FIG. 9, the upper and lower surfaces of the insulating carrier 100 in the second packaging substrate 12 include an effective area 110 and an ineffective area 111.
需要说明的是,有效区110为第二封装基板12上用于实现信号传输的区域。非有效区111为第二封装基板12上无需实现信号传输的区域。It should be noted that the effective area 110 is an area on the second packaging substrate 12 for signal transmission. The inactive area 111 is an area on the second packaging substrate 12 that does not require signal transmission.
在此情况下,上述金属布线101位于有效区110内。In this case, the aforementioned metal wiring 101 is located in the effective area 110.
此外,上述第二封装基板12还包括覆盖非有效区111的金属膜104。In addition, the above-mentioned second packaging substrate 12 further includes a metal film 104 covering the ineffective area 111.
该金属膜104与有效区110内的金属布线101断开,从而使得上述金属布线101无法与金属膜104电连接。The metal film 104 is disconnected from the metal wiring 101 in the effective area 110, so that the metal wiring 101 cannot be electrically connected to the metal film 104.
这样一来,通过在第二封装基板12上设置上述金属膜104,能够增加第二封装基板12的CTE。In this way, by providing the above-mentioned metal film 104 on the second packaging substrate 12, the CTE of the second packaging substrate 12 can be increased.
在此情况下,当第二封装基板12需要具有较大的CTE时,可以在第二封装基板12中,绝缘载板100的上、下表面的所有非有效区111中,设置上述金属膜104。In this case, when the second packaging substrate 12 needs to have a large CTE, the above-mentioned metal film 104 can be provided in all the inactive regions 111 on the upper and lower surfaces of the insulating carrier 100 in the second packaging substrate 12 .
或者,当第二封装基板12需要具有较小的CTE时,可以在第二封装基板12中,绝缘载板100的上、下表面的部分非有效区111中,设置上述金属膜104。Alternatively, when the second packaging substrate 12 needs to have a smaller CTE, the above-mentioned metal film 104 may be provided in the second packaging substrate 12 in the partially inactive regions 111 on the upper and lower surfaces of the insulating carrier 100.
为了简化第二封装基板12的制作工艺,上述金属膜104可以与金属布线101的材料相同。在此情况下,在制作第二封装基板12的过程中,可以对绝缘载板100上、下表面覆盖的铜箔进行图形化工艺,同时形成上述金属膜104和金属布线101。In order to simplify the manufacturing process of the second packaging substrate 12, the metal film 104 may be made of the same material as the metal wiring 101. In this case, in the process of manufacturing the second packaging substrate 12, the copper foil covering the upper and lower surfaces of the insulating carrier 100 may be patterned, and the metal film 104 and the metal wiring 101 described above can be formed at the same time.
或者,在满足芯片封装结构01的外形设计尺寸要求的情况下,可以通过增加绝缘载板100的厚度,达到提高第二封装基板12的CTE的目的。Alternatively, in the case of meeting the requirements of the external design dimension of the chip packaging structure 01, the thickness of the insulating carrier 100 can be increased to achieve the purpose of increasing the CTE of the second packaging substrate 12.
其中,构成上述绝缘载板100的材料可以为聚丙烯(PP),或者ABF(Ajinomoto Build-up Film)。The material constituting the insulating carrier board 100 may be polypropylene (PP) or ABF (Ajinomoto Build-up Film).
示例二Example two
本申请实施例中,上述芯片封装结构01,如图10或图11所示,包括至少两个并排的转接组件,例如,转接组件30a和转接组件30b。In the embodiment of the present application, the aforementioned chip packaging structure 01, as shown in FIG. 10 or FIG. 11, includes at least two side-by-side switching components, for example, a switching component 30a and a switching component 30b.
上述不同的转接组件与第一封装基板11下表面电连接的区域不同。例如,转接组件30a与第一封装基板11下表面的左半部分区域电连接,转接组件30b与第一封装基板11下表面的右半部分区域电连接。The above-mentioned different adapter components are electrically connected to the lower surface of the first packaging substrate 11 in different areas. For example, the transition component 30a is electrically connected to the left half area of the lower surface of the first packaging substrate 11, and the transition component 30b is electrically connected to the right half area of the lower surface of the first packaging substrate 11.
任意相邻两个转接组件具有相同数量的第二封装基板12。Any two adjacent transfer components have the same number of second packaging substrates 12.
例如,如图10所示,转接组件30a具有一个第二封装基板12a,转接组件30b具有一个第二封装基板12b。For example, as shown in FIG. 10, the transfer assembly 30a has a second packaging substrate 12a, and the transfer assembly 30b has a second packaging substrate 12b.
或者,又例如,如图11所示,转接组件30a具有两个层叠的第二封装基板12。 转接组件30b具有两个层叠的第二封装基板12。在此情况下,在制作转接组件30a中的任意一个第二封装基板12和转接组件30b中的任意一个第二封装基板12的过程中,可以选择规格(例如,沿垂直于PCB承载面的方向的厚度)相同的绝缘载板100,使得转接组件30a和转接组件30b的制作工艺更加简单、易操作。Or, for another example, as shown in FIG. 11, the adapter assembly 30 a has two stacked second packaging substrates 12. The transfer assembly 30b has two stacked second packaging substrates 12. In this case, in the process of manufacturing any one of the second packaging substrates 12 in the transfer assembly 30a and any one of the second packaging substrates 12 in the transfer assembly 30b, the specifications (for example, along the perpendicular to the PCB bearing surface The same insulating carrier 100 with the same thickness in the direction of φ) makes the manufacturing process of the adapter assembly 30a and the adapter assembly 30b simpler and easier to operate.
此时,转接组件30a中的任意一个第二封装基板12和转接组件30b中的任意一个第二封装基板12的厚度相同。在此基础上,在转接组件30a中的第二封装基板12的数量与转接组件30b中的第二封装基板12的数量相同的情况下,转接组件30a与转接组件30b对第一封装基板11的支撑效果相同或近似相同,从而使得第一封装基板11的受力更加的均匀,以进一步减小第一封装基板11发生翘曲的几率。在此基础上,相邻两个位于不同的转接组件中的第二封装基板之间具有间隙。例如,图10中,转接组件30a中的第二封装基板12a,与转接组件30b中的第二封装基板12b之间具有间隙G。At this time, any one of the second packaging substrates 12 in the transfer assembly 30a and any one of the second packaging substrates 12 in the transfer assembly 30b have the same thickness. On this basis, when the number of second packaging substrates 12 in the adapter assembly 30a is the same as the number of the second packaging substrates 12 in the adapter assembly 30b, the adapter assembly 30a and the adapter assembly 30b are opposite to the first The supporting effect of the packaging substrate 11 is the same or approximately the same, so that the force on the first packaging substrate 11 is more uniform, so as to further reduce the probability of warping of the first packaging substrate 11. On this basis, there is a gap between two adjacent second packaging substrates located in different transition components. For example, in FIG. 10, there is a gap G between the second packaging substrate 12a in the transfer assembly 30a and the second packaging substrate 12b in the transfer assembly 30b.
在此情况下,上述芯片封装结构01中,上述第一封装基板12的下表面可以通过多个第一连接件41,与多个位于同一水平面上的第二封装基板12电连接。并且,上述多个位于同一水平面上的第二封装基板12之间彼此断开。In this case, in the chip packaging structure 01, the lower surface of the first packaging substrate 12 may be electrically connected to a plurality of second packaging substrates 12 on the same horizontal plane through a plurality of first connectors 41. In addition, the plurality of second packaging substrates 12 on the same horizontal plane are disconnected from each other.
这样一来,相对于与第二封装基板11尺寸相当的第二封装基板12而言,图9和图10中的每个第二封装基板12的尺寸有所减小,从而能够有效降低每个第二封装基板12在SMT工艺中,发生翘曲的几率。As a result, the size of each second packaging substrate 12 in FIG. 9 and FIG. 10 is reduced compared to the second packaging substrate 12 having the same size as the second packaging substrate 11, thereby effectively reducing the size of each second packaging substrate 12 The second package substrate 12 has a probability of warping during the SMT process.
在此基础上,对于上述示例一和示例二中,任意一种芯片封装结构而言,该芯片封装结构01中的半导体器件20,如图12所示,可以包括至少一个裸芯片(die)201以及多个第四连接件44。On this basis, for any chip packaging structure in the above example 1 and example 2, the semiconductor device 20 in the chip packaging structure 01, as shown in FIG. 12, may include at least one die 201 And a plurality of fourth connecting members 44.
其中,上述多个第四连接件44,排布于裸芯片201的有源面,用于将裸芯片201与第一封装基板11电连接。Among them, the above-mentioned multiple fourth connecting members 44 are arranged on the active surface of the bare chip 201 and are used to electrically connect the bare chip 201 with the first packaging substrate 11.
需要说明的是,上述裸芯片201的有源面是指,裸芯片201上设置有电路结构的表面。此外,本发明实施例中是以倒装芯片(flip chip)的方式为例来介绍裸芯片201在芯片封装结构中的连接方式,在实际产品中,该裸芯片201也可以通过引线键合(wired bonding)等其他方式与第一封装基板11固定电连接。It should be noted that the above-mentioned active surface of the bare chip 201 refers to the surface on which the circuit structure is provided on the bare chip 201. In addition, in the embodiment of the present invention, a flip chip method is taken as an example to introduce the connection method of the bare chip 201 in the chip packaging structure. In an actual product, the bare chip 201 can also be connected by wire bonding ( Wired bonding) and other methods are fixed and electrically connected to the first packaging substrate 11.
或者,如图13所示,上述半导体器件20包括至少两个裸芯片。例如,裸芯片201a和裸芯片201b。Alternatively, as shown in FIG. 13, the aforementioned semiconductor device 20 includes at least two bare chips. For example, bare chip 201a and bare chip 201b.
此外,上述半导体器件20还包括转接板(interposer)60、多个第四连接件44以及多个第五连接件45。上述第四连接件44和第五连接件45可以为锡焊凸块。In addition, the aforementioned semiconductor device 20 further includes an interposer 60, a plurality of fourth connecting members 44 and a plurality of fifth connecting members 45. The fourth connecting member 44 and the fifth connecting member 45 may be solder bumps.
其中,转接板60用于承载上述至少两个裸芯片。多个第四连接件44排布于裸芯片的有源面,用于将所述至少两个裸芯片与转接板60电连接。Wherein, the adapter board 60 is used to carry the above-mentioned at least two bare chips. A plurality of fourth connecting members 44 are arranged on the active surface of the bare chip, and are used to electrically connect the at least two bare chips with the adapter board 60.
此外,多个第五连接件45,排布于转接板60的下表面(朝向第一封装基板11的一侧表面),用于将转接板60与第一封装基板11电连接。In addition, a plurality of fifth connecting members 45 are arranged on the lower surface (the side surface facing the first packaging substrate 11) of the interposer board 60 for electrically connecting the interposer board 60 and the first packaging substrate 11.
在此情况下,上述至少两个裸芯片可以通过一个转接板60将信号传输至第一封装载板11。In this case, the above-mentioned at least two bare chips can transmit signals to the first package carrier 11 through an adapter board 60.
在此基础上,上述芯片封装结构01,如图12所示,还包括散热胶结合胶50、散热盖51以及底胶52。On this basis, the aforementioned chip packaging structure 01, as shown in FIG. 12, further includes a heat dissipation glue bonding glue 50, a heat dissipation cover 51 and a primer 52.
上述散热胶结合胶50覆盖半导体器件20,从而可以将半导体器件20中裸芯片201 进行包裹。The aforementioned heat-dissipating glue bonding glue 50 covers the semiconductor device 20 so that the bare chip 201 in the semiconductor device 20 can be wrapped.
散热盖51覆盖散热胶结合胶50,并于第一封装基板11相接触。The heat dissipation cover 51 covers the heat dissipation adhesive bonding glue 50 and is in contact with the first packaging substrate 11.
底胶52设置于半导体器件20与第一封装基板11之间,以及第一封装基板11和与该第一封装基板11相邻的第二封装基板12之间。The primer 52 is disposed between the semiconductor device 20 and the first packaging substrate 11 and between the first packaging substrate 11 and the second packaging substrate 12 adjacent to the first packaging substrate 11.
此外,在第二封装基板12与PCB之间也可以设置上述底胶52。In addition, the aforementioned primer 52 may also be provided between the second packaging substrate 12 and the PCB.
以下,以图12所示的芯片封装结构01为例,对该芯片封装结构01的制作过程进行举例说明。Hereinafter, taking the chip packaging structure 01 shown in FIG. 12 as an example, the manufacturing process of the chip packaging structure 01 will be described as an example.
示例三Example three
在本示例中,芯片封装结构01的制作过程包括:In this example, the manufacturing process of the chip package structure 01 includes:
首先,通过芯片切割工艺获得裸芯片201。First, the bare chip 201 is obtained through a chip dicing process.
然后,如图14a所示,在裸芯片201的有源面排布多个第四连接件44。Then, as shown in FIG. 14a, a plurality of fourth connectors 44 are arranged on the active surface of the bare chip 201.
接下来,通过芯片贴装工艺,如图14a所示,将裸芯片201贴装于第一封装基板11的上表面。Next, through the chip mounting process, as shown in FIG. 14a, the bare chip 201 is mounted on the upper surface of the first packaging substrate 11.
然后,通过回流焊工艺,将多个第四连接件44焊接于第一封装基板11的上表面。Then, the plurality of fourth connecting members 44 are soldered to the upper surface of the first packaging substrate 11 through a reflow soldering process.
接下来,采用底胶填充工艺,在裸芯片201与第一封装基板11之间,填充底胶52。Next, using a primer filling process, a primer 52 is filled between the bare chip 201 and the first packaging substrate 11.
接下来,涂布散热胶结合胶50,以使得散热胶结合胶50能够对裸芯片201进行包裹。Next, the heat dissipation adhesive bonding glue 50 is coated, so that the heat dissipation adhesive bonding glue 50 can wrap the bare chip 201.
接下来,进行散热盖51植片工艺,将散热盖51覆盖散热胶结合胶50。Next, the heat dissipation cover 51 is implanted to cover the heat dissipation glue bonding glue 50 with the heat dissipation cover 51.
然后,通过焊球阵列(ball grid array,BGA)植球工艺,在第一封装基板11的下表面排布多个第一连接件41。从而完成如图14a所示的结构。Then, a plurality of first connectors 41 are arranged on the lower surface of the first package substrate 11 through a ball grid array (BGA) planting process. This completes the structure shown in Figure 14a.
在此基础上,如图14b所示,采用SMT工艺,将图14a所示的结构设置于第二封装基板12的上表面。On this basis, as shown in FIG. 14b, the structure shown in FIG. 14a is disposed on the upper surface of the second packaging substrate 12 by using the SMT process.
然后,通过回流焊工艺,多个第一连接件41焊接于第二封装基板12上。Then, a plurality of first connecting members 41 are soldered on the second packaging substrate 12 through a reflow soldering process.
接下来,如图14c所示,采用第二次底胶填充工艺,在第一封装基板11和第二封装基板12之间,填充底胶52。Next, as shown in FIG. 14c, a second primer filling process is used to fill the primer 52 between the first packaging substrate 11 and the second packaging substrate 12.
接下来,如图14d所示,采用第二次BGA植球工艺,在第二封装基板12的下表面排布多个第二连接件42。从而完成了图14d所示的结构。Next, as shown in FIG. 14d, a second BGA ball planting process is adopted to arrange a plurality of second connecting members 42 on the lower surface of the second packaging substrate 12. This completes the structure shown in Figure 14d.
然后,采用SMT工艺,将图14d所示的结构,设置于PCB上,并对多个第二连接件42进行回流焊工艺,以使得多个第二连接件42焊接于PCB上。从而完成图12所示的芯片封装结构01的结构。Then, using the SMT process, the structure shown in FIG. 14d is placed on the PCB, and the reflow soldering process is performed on the plurality of second connectors 42 so that the plurality of second connectors 42 are soldered on the PCB. Thus, the structure of the chip package structure 01 shown in FIG. 12 is completed.
需要说明的是,上述制作工艺是以通过BGA植球工艺制作的上述多个第一连接件41和多个第二连接件42,分别进行回流焊工艺为例进行的说明。It should be noted that the above-mentioned manufacturing process is described by taking the above-mentioned plurality of first connecting members 41 and the plurality of second connecting members 42 manufactured by the BGA ball planting process, and respectively performing the reflow soldering process as an example.
在本申请的另一些实施例中,可以对通过BGA植球工艺制作的上述多个第一连接件41和多个第二连接件42,采用同一次回流焊工艺。在此情况下,需要在上述回流焊工艺结束后,再在第一封装基板11和第二封装基板12之间填充底胶52。In some other embodiments of the present application, the same reflow soldering process may be used for the multiple first connecting members 41 and the multiple second connecting members 42 manufactured by the BGA ball planting process. In this case, it is necessary to fill the primer 52 between the first packaging substrate 11 and the second packaging substrate 12 after the above-mentioned reflow process is completed.
示例四Example 4
在本示例中,芯片封装结构01的制作过程包括:In this example, the manufacturing process of the chip package structure 01 includes:
首先,如图15a所示,采用BGA植球工艺,在第二封装基板12的下表面排布多 个第二连接件42。First, as shown in FIG. 15a, a BGA ball planting process is used to arrange a plurality of second connecting members 42 on the lower surface of the second packaging substrate 12.
接下来,如图15b所示,通过SMT工艺,将图15a所示的结构设置于PCB。然后通过回流焊工艺,将多个第二连接件42焊接于PCB上。Next, as shown in FIG. 15b, the structure shown in FIG. 15a is placed on the PCB through the SMT process. Then, the plurality of second connectors 42 are soldered on the PCB through a reflow soldering process.
接下来,将图14a所示的结构,通过SMT工艺,贴装于第二基板12的上表面,并通过回流焊工艺,将多个第一连接件41焊接于第二封装基板12的上表面。从而形成如图15c所示的结构。Next, the structure shown in FIG. 14a is mounted on the upper surface of the second substrate 12 through an SMT process, and a plurality of first connectors 41 are soldered on the upper surface of the second packaging substrate 12 through a reflow process. . Thus, the structure shown in Fig. 15c is formed.
需要说明的是,图14a所示的结构的制作方法,与示例三中的方法相同,此处不再赘述。It should be noted that the manufacturing method of the structure shown in FIG. 14a is the same as the method in Example 3, and will not be repeated here.
接下来,同上所示,采用底胶填充工艺,在第一封装基板11和第二封装基板12之间,以及第二封装基板12和PCB之间填充底胶52,从而形成如图12所示的芯片封装结构01。Next, as shown in the above, the primer filling process is used to fill the primer 52 between the first packaging substrate 11 and the second packaging substrate 12, and between the second packaging substrate 12 and the PCB, so as to form as shown in FIG.的chip package structure 01.
示例五Example 5
在本示例中,芯片封装结构01的制作过程包括:In this example, the manufacturing process of the chip package structure 01 includes:
首先,如图16a所示,采用BGA植球工艺,在第一封装基板11的下表面排布多个第一连接件41。First, as shown in FIG. 16a, a BGA ball planting process is used to arrange a plurality of first connecting members 41 on the lower surface of the first packaging substrate 11.
然后,如图16b所示,采用SMT工艺,将图16a所示的结构贴装于第二封装基板12的上表面,并通过回流焊工艺,使得多个第一连接件41焊接于第二封装基板12上。Then, as shown in FIG. 16b, the SMT process is used to mount the structure shown in FIG. 16a on the upper surface of the second package substrate 12, and through a reflow process, the multiple first connectors 41 are soldered to the second package On the substrate 12.
接下来,将图14a所示的结构通过SMT工艺,贴装于第二基板12的上表面,并通过回流焊工艺,将多个第一连接件41焊接于第二封装基板12的上表面。此外,通过采用BGA植球工艺,在第二封装基板12的下表面排布多个第二连接件42。从而形成如图16c所示的结构。Next, the structure shown in FIG. 14a is mounted on the upper surface of the second substrate 12 through an SMT process, and a plurality of first connectors 41 are soldered to the upper surface of the second packaging substrate 12 through a reflow process. In addition, by using the BGA ball planting process, a plurality of second connecting members 42 are arranged on the lower surface of the second packaging substrate 12. Thus, the structure shown in Fig. 16c is formed.
需要说明的是,图14a所示的结构的制作方法,与示例三中的方法相同,此处不再赘述。It should be noted that the manufacturing method of the structure shown in FIG. 14a is the same as the method in Example 3, and will not be repeated here.
然后,采用SMT工艺,将图16c的结构贴装于PCB的上表面,并通过回流焊工艺,将多个第二连接件42焊接于PCB上。Then, using the SMT process, the structure of FIG. 16c is mounted on the upper surface of the PCB, and the plurality of second connectors 42 are soldered on the PCB through a reflow soldering process.
最后,采用底胶填充工艺,在第一封装基板11和第二封装基板12之间,以及第二封装基板12和PCB之间填充底胶52,从而形成如图12所示的芯片封装结构01。Finally, using a primer filling process, primer 52 is filled between the first packaging substrate 11 and the second packaging substrate 12, and between the second packaging substrate 12 and the PCB, thereby forming a chip packaging structure 01 as shown in FIG. 12 .
本申请的实施例提供一种电子设备,包括PCB,以及如上所述的任意一种芯片封装结构01。由上述可知,上述芯片封装结构01中第二连接件42与PCB电连接。上述电子设备具有与前述实施例提供的芯片封装结构01相同的技术效果。此处不再赘述。The embodiment of the present application provides an electronic device, including a PCB, and any chip packaging structure 01 described above. It can be seen from the above that the second connector 42 in the chip package structure 01 is electrically connected to the PCB. The above-mentioned electronic device has the same technical effect as the chip package structure 01 provided in the foregoing embodiment. I won't repeat them here.
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以所述权利要求的保护范围为准。The above are only the specific embodiments of the present invention, but the scope of protection of the present invention is not limited to this. Any person skilled in the art can easily think of changes or replacements within the technical scope disclosed by the present invention. It should be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims (16)

  1. 一种芯片封装结构,其特征在于,包括:A chip packaging structure, characterized in that it comprises:
    第一封装基板,具有相对设置的上、下表面;The first packaging substrate has upper and lower surfaces arranged oppositely;
    半导体器件,位于所述第一封装基板的上表面,且与所述第一封装基板电连接;A semiconductor device located on the upper surface of the first packaging substrate and electrically connected to the first packaging substrate;
    转接组件,用于与印刷电路板电连接,所述转接组件位于所述第一封装基板的下表面,且包括至少一个第二封装基板;An adapter component for electrical connection with a printed circuit board, the adapter component is located on the lower surface of the first packaging substrate and includes at least one second packaging substrate;
    多个第一连接件,排布于所述第一封装基板的下表面,用于将所述第一封装基板与所述至少一个第二封装基板电连接。A plurality of first connecting members are arranged on the lower surface of the first packaging substrate and used for electrically connecting the first packaging substrate and the at least one second packaging substrate.
  2. 根据权利要求1所述的芯片封装结构,其特征在于,所述转接组件包括至少两个层叠的所述第二封装基板;4. The chip packaging structure of claim 1, wherein the adapter assembly comprises at least two stacked second packaging substrates;
    所述转接组件还包括多个第三连接件;The adapter assembly further includes a plurality of third connecting members;
    所述第三连接件位于相邻两个所述第二封装基板之间,且用于将相邻两个所述第二封装基板电连接。The third connecting member is located between two adjacent second packaging substrates, and is used to electrically connect two adjacent second packaging substrates.
  3. 根据权利要求2所述的芯片封装结构,其特征在于,所述转接组件中的至少两个层叠的所述第二封装基板的热膨胀系数相同。3. The chip packaging structure according to claim 2, wherein the thermal expansion coefficients of at least two stacked second packaging substrates in the transition assembly are the same.
  4. 根据权利要求2所述的芯片封装结构,其特征在于,沿所述第一封装基板到所述印刷电路板的方向,所述转接组件中的至少两个层叠的所述第二封装基板的热膨胀系数依次增大。The chip packaging structure of claim 2, wherein along the direction from the first packaging substrate to the printed circuit board, at least two of the second packaging substrates stacked in the adapter assembly are The coefficient of thermal expansion increases sequentially.
  5. 根据权利要求1至4任一项所述的芯片封装结构,其特征在于,所述芯片封装结构包括至少两个并排的转接组件;不同的转接组件与所述第一封装基板下表面电连接的区域不同;The chip packaging structure according to any one of claims 1 to 4, wherein the chip packaging structure comprises at least two adapter components side by side; different adapter components are electrically connected to the lower surface of the first packaging substrate. Different connected areas;
    任意相邻两个所述转接组件具有相同数量的所述第二封装基板;Any two adjacent transition components have the same number of second packaging substrates;
    相邻两个位于不同的所述转接组件中的所述第二封装基板之间具有间隙。There is a gap between two adjacent second packaging substrates located in different transfer assemblies.
  6. 根据权利要求1至5任一项所述的芯片封装结构,其特征在于,The chip packaging structure according to any one of claims 1 to 5, wherein:
    所述第二封装基板的热膨胀系数大于所述第一封装基板的热膨胀系数,小于所述印刷电路板的热膨胀系数。The thermal expansion coefficient of the second packaging substrate is greater than the thermal expansion coefficient of the first packaging substrate, and is smaller than the thermal expansion coefficient of the printed circuit board.
  7. 根据权利要求1至6任一项所述的芯片封装结构,其特征在于,所述第二封装基板包括至少一层绝缘载板、以及位于所述绝缘载板上、下表面的金属布线;The chip packaging structure according to any one of claims 1 to 6, wherein the second packaging substrate comprises at least one layer of insulating carrier, and metal wiring on the lower surface of the insulating carrier;
    所述绝缘载板上设置有导通孔,所述导通孔用于将所述绝缘载板上、下表面的金属布线电连接。The insulating carrier board is provided with a via hole, and the via hole is used to electrically connect the metal wiring on the lower surface of the insulating carrier board.
  8. 根据权利要求7所述的芯片封装结构,其特征在于,所述芯片封装结构还包括多个第二连接件,排布于所述转接组件的下表面,用于将所述转接组件与印刷电路板电连接;7. The chip packaging structure of claim 7, wherein the chip packaging structure further comprises a plurality of second connecting members arranged on the lower surface of the adapter assembly for connecting the adapter assembly with Printed circuit board electrical connection;
    一个所述第一连接件通过所述绝缘载板上的所述导通孔,与一个所述第二连接件电连接。One of the first connectors is electrically connected to one of the second connectors through the through holes on the insulating carrier board.
  9. 根据权利要求7所述的芯片封装结构,其特征在于,所述绝缘载板的上、下表面包括有效区和非有效区;8. The chip packaging structure according to claim 7, wherein the upper and lower surfaces of the insulating carrier board include an effective area and an ineffective area;
    所述金属布线位于所述有效区;The metal wiring is located in the effective area;
    所述第二封装基板还包括覆盖所述非有效区的金属膜;所述金属膜与所述金属布 线断开。The second packaging substrate further includes a metal film covering the inactive area; the metal film is disconnected from the metal wiring.
  10. 根据权利要求9所述的芯片封装结构,其特征在于,所述金属膜与所述金属布线的材料相同。9. The chip packaging structure of claim 9, wherein the metal film and the metal wiring are made of the same material.
  11. 根据权利要求8所述的芯片封装结构,其特征在于,所述第二连接件为焊球或凸块。8. The chip packaging structure of claim 8, wherein the second connecting member is a solder ball or a bump.
  12. 根据权利要求1所述的芯片封装结构,其特征在于,所述半导体器件包括:4. The chip packaging structure of claim 1, wherein the semiconductor device comprises:
    裸芯片;Bare chip
    多个第四连接件,排布于所述裸芯片的有源面,用于将所述裸芯片与所述第一封装基板电连接。A plurality of fourth connecting members are arranged on the active surface of the bare chip and are used to electrically connect the bare chip and the first packaging substrate.
  13. 根据权利要求1所述的芯片封装结构,其特征在于,所述半导体器件包括:4. The chip packaging structure of claim 1, wherein the semiconductor device comprises:
    至少两个裸芯片;At least two bare chips;
    转接板,用于承载所述至少两个裸芯片;An adapter board for carrying the at least two bare chips;
    多个第四连接件,排布于所述裸芯片的有源面,用于将所述至少两个裸芯片与所述转接板电连接;A plurality of fourth connecting members arranged on the active surface of the bare chip and used to electrically connect the at least two bare chips with the adapter board;
    多个第五连接件,排布于所述转接板的下表面,用于将所述转接板与所述第一封装基板电连接。A plurality of fifth connecting members are arranged on the lower surface of the transfer board and are used for electrically connecting the transfer board and the first packaging substrate.
  14. 根据权利要求1所述的芯片封装结构,其特征在于,所述芯片封装结构还包括:4. The chip packaging structure of claim 1, wherein the chip packaging structure further comprises:
    散热胶结合胶,覆盖所述半导体器件;Heat-dissipating glue bonding glue, covering the semiconductor device;
    散热盖,覆盖所述散热胶结合胶,并于所述第一封装基板相接触;A heat dissipation cover, covering the heat dissipation glue bonding glue and contacting the first packaging substrate;
    底胶,设置于所述半导体器件与所述第一封装基板之间,以及所述第一封装基板和与所述第一封装基板相邻的所述第二封装基板之间。The primer is arranged between the semiconductor device and the first packaging substrate, and between the first packaging substrate and the second packaging substrate adjacent to the first packaging substrate.
  15. 根据权利要求1所述的芯片封装结构,其特征在于,所述第一连接件为焊球或凸块。4. The chip packaging structure of claim 1, wherein the first connecting member is a solder ball or a bump.
  16. 一种电子设备,其特征在于,包括印刷电路板,以及如权利要求1-15任一项所述的芯片封装结构;An electronic device, characterized by comprising a printed circuit board, and the chip packaging structure according to any one of claims 1-15;
    所述芯片封装结构中的转接组件与所述印刷电路板电连接。The switching component in the chip packaging structure is electrically connected with the printed circuit board.
PCT/CN2019/072224 2019-01-17 2019-01-17 Chip packaging structure and electronic device WO2020147084A1 (en)

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