WO2020140701A1 - 外延晶片以及半导体激光器 - Google Patents

外延晶片以及半导体激光器 Download PDF

Info

Publication number
WO2020140701A1
WO2020140701A1 PCT/CN2019/124469 CN2019124469W WO2020140701A1 WO 2020140701 A1 WO2020140701 A1 WO 2020140701A1 CN 2019124469 W CN2019124469 W CN 2019124469W WO 2020140701 A1 WO2020140701 A1 WO 2020140701A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
light
functional
epitaxial wafer
confinement
Prior art date
Application number
PCT/CN2019/124469
Other languages
English (en)
French (fr)
Inventor
陈长安
郑兆祯
Original Assignee
深圳市中光工业技术研究院
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市中光工业技术研究院 filed Critical 深圳市中光工业技术研究院
Publication of WO2020140701A1 publication Critical patent/WO2020140701A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the technical field of semiconductors, in particular to an epitaxial wafer and a semiconductor laser.
  • AlGaInP quaternary compound materials are widely used in high-brightness red light-emitting diodes and semiconductor lasers, and have become the mainstream material of red light-emitting devices.
  • the AlGaInP material system itself has its shortcomings: the conduction band of the AlGaInP/GaInP heterojunction is very small, the maximum value is about 270meV, which is smaller than the 350MeV of the AlGaAs material, so the electronic barrier is relatively low It is easy to form leakage current, which makes the laser threshold current increase, especially in high temperature and high current operation.
  • the thermal resistance of AlGaInP material is much higher than that of AlGaAs material. Therefore, more heat is generated during operation, which may easily lead to excessive junction temperature and cavity surface temperature.
  • the effective mass and density of states of AlGaInP material carriers are higher than those of AlGaAs materials, and higher transparent current density is required for lasing. The above reasons make the characteristic temperature of the laser using the AlGaInP material system lower and the electro-optical conversion efficiency lower during continuous operation.
  • the main technical problem solved by the present invention is to provide an epitaxial wafer and a semiconductor laser, which can increase the characteristic temperature of the laser to which the epitaxial wafer of the present invention is applied, thereby improving the electro-optical conversion efficiency.
  • a technical solution adopted by the present invention is to provide an epitaxial wafer including: a substrate; a functional layer on which the functional layer is located; wherein, at least a part of the layer in the functional layer is doped Mixed with Mg; light-emitting layer, the light-emitting layer is located in the functional layer, the functional layer is used to drive the light-emitting layer to emit light.
  • the functional layer includes a first functional layer and a second functional layer, and the first functional layer, the light emitting layer, and the second functional layer are sequentially stacked on the substrate in a direction close to the substrate.
  • the first functional layer includes a first waveguide layer and a first confinement layer
  • the first waveguide layer is located on a side of the light emitting layer away from the second functional layer
  • the first confinement layer is located away from the first waveguide layer
  • One side of the light emitting layer, and the first waveguide layer and the first confinement layer are doped with Mg.
  • the Mg concentration in the first waveguide layer is smaller than the Mg concentration in the first confinement layer.
  • the first confinement layer includes a first sub-confinement layer and a second sub-confinement layer.
  • the first sub-confinement layer is located on the side of the first waveguide layer away from the light-emitting layer, and the second sub-confinement layer is located on the A sub-confinement layer is away from a side of the first waveguide layer; wherein, the first sub-confinement layer is doped with Mg and the second sub-confinement layer is doped with Zn.
  • the first limiting layer further includes a barrier layer, and the barrier layer is located between the first sub-limiting layer and the second sub-limiting layer.
  • the barrier layer includes a first barrier layer and a second barrier layer, the first barrier layer is doped with Mg, the second barrier layer is doped with Zn, and the barrier layer is at least one first barrier layer A superlattice structure alternately stacked and paired with at least one second barrier layer.
  • the first functional layer further includes a contact layer, the contact layer is located on a side of the second sub-limiting layer away from the first sub-limiting layer, and a transition layer is provided between the contact layer and the second sub-limiting layer
  • the barrier layer and the transition layer are used to increase the distance between the contact layer and the light-emitting layer; wherein, the contact layer is doped with Zn.
  • the barrier layer is composed of undoped AlGaInP material.
  • the first functional layer is an N-type semiconductor layer and the second functional layer is a P-type semiconductor layer; or the first functional layer is a P-type semiconductor layer and the second functional layer is an N-type semiconductor layer.
  • another technical solution adopted by the present invention is to provide a semiconductor laser including the epitaxial wafer as described in the above embodiment.
  • the present invention provides an epitaxial wafer, which includes a substrate and a functional layer on the substrate.
  • the epitaxial wafer also includes a light-emitting layer, the light-emitting layer is located in the functional layer, and the functional layer is used to drive the light-emitting layer to emit light.
  • at least a part of the layer body in the functional layer is doped with Mg to increase the position of the quasi-Fermi level of the at least part of the layer body, thereby increasing the effective barrier for blocking current leakage, and thus can improve the laser using the epitaxial wafer of the present invention Characteristic temperature, which in turn improves its electro-optical conversion efficiency.
  • FIG. 1 is a schematic structural view of an embodiment of an epitaxial wafer according to the present invention.
  • FIG. 2 is a schematic diagram of the conduction band structure of the epitaxial wafer shown in FIG. 1;
  • FIG. 3 is a schematic structural view of another embodiment of the epitaxial wafer of the present invention.
  • FIG. 4 is a schematic diagram of the conduction band structure of the epitaxial wafer shown in FIG. 3;
  • FIG. 5 is a schematic structural view of an embodiment of the first limiting layer of the present invention.
  • FIG. 6 is a schematic structural view of an embodiment of the barrier layer of the present invention.
  • FIG. 7 is a schematic diagram of an embodiment of the epitaxial wafer conduction band structure of the present invention.
  • FIG. 8 is a schematic structural view of an embodiment of a semiconductor laser of the present invention.
  • an embodiment of the present invention provides an epitaxial wafer.
  • the epitaxial wafer includes: a substrate; a functional layer, and the functional layer is located on the substrate Above; wherein, at least part of the layer body in the functional layer is doped with Mg; the light-emitting layer, the light-emitting layer is located in the functional layer, the functional layer is used to drive the light-emitting layer to emit light. This is explained in detail below.
  • FIG. 1 is a schematic structural diagram of an embodiment of an epitaxial wafer according to the present invention.
  • the epitaxial wafer includes a substrate 1 and a functional layer 2 on the substrate 1, and the epitaxial wafer further includes a light-emitting layer 3.
  • the light-emitting layer 3 is located in the functional layer 2, and the functional layer 2 is used to drive the light-emitting layer 3 Glow to meet the needs of use.
  • epitaxial wafers are used in lasers, and the light-emitting layer 3 is used to generate sufficient optical gain and emit light to achieve the laser emission wavelength required by the laser output.
  • At least a part of the layer body is doped with Mg to increase the position of the quasi-Fermi level of the at least part of the layer body, thereby improving the effective barrier to block current leakage, reducing current leakage, and thereby improving its electro-optical Conversion efficiency reduces heat production.
  • the functional layer 2 includes a first functional layer 21 and a second functional layer 22.
  • the first functional layer 21, the light emitting layer 3, and the second functional layer 22 are sequentially stacked on the substrate 1 in a direction close to the substrate 1, that is, the second functional layer 22 is located on the substrate 1, and the light emitting layer 3 is located on the second functional layer On 22, the first functional layer 21 is located on the light emitting layer 3.
  • the first functional layer 21 includes a first waveguide layer 211 and a first confinement layer 212.
  • the first waveguide layer 211 is located on the side of the light-emitting layer 3 away from the second functional layer 22
  • the first confinement layer 212 is located on the side of the first waveguide layer 211 away from the light-emitting layer 3, and the first waveguide layer 211 and the first confinement layer 212 Doped with Mg, it is used to increase the position of the quasi-Fermi level of the first waveguide layer 211 and the first confinement layer 212, thereby increasing the effective barrier to block current leakage.
  • the Mg concentration doped in the first waveguide layer 211 is smaller than the Mg concentration in the first confinement layer 212.
  • the highly doped first confinement layer 212 can further improve the electrical conductivity of the material, reduce the series resistance of the laser, increase the electro-optical conversion efficiency of the laser, and reduce heat generation.
  • the second functional layer 22 includes a second waveguide layer 221 and a second confinement layer 222.
  • the second waveguide layer 221 is located on the side of the light emitting layer 3 away from the first functional layer 21, and the second confinement layer 222 is located on the side of the second waveguide layer 221 away from the light emitting layer 3.
  • the second confinement layer 222 is located on the substrate 1.
  • first waveguide layer 211 and the second waveguide layer 221 are used to transmit electrons or holes to the light-emitting layer 3.
  • the electrons and holes meet and pair in the light-emitting layer 3, and the electrons and holes after bonding release energy And is absorbed by the light-emitting layer 3, so that the light-emitting layer 3 radiates laser light.
  • the refractive index of the first confinement layer 212 and the second confinement layer 222 is smaller than that of the first waveguide layer 211 and the second waveguide layer 221.
  • the laser light radiated from the light-emitting layer 3 passes through the first waveguide layer 211 and the second waveguide layer 221, and total reflection occurs at the interface between the first waveguide layer 211, the second waveguide layer 221, the first confinement layer 212, and the second confinement layer 222 , So that the laser light field radiated by the light-emitting layer 3 is limited in the light-emitting layer 3, the first waveguide layer 211, and the second waveguide layer 221.
  • the first functional layer 21 also includes a transition layer 213 and a contact layer 214.
  • the transition layer 213 is located on the side of the first confinement layer 212 away from the first waveguide layer 211, and the contact layer 214 is located on the side of the transition layer 213 away from the first confinement layer 212.
  • the contact layer 214 serves as a medium for connecting the epitaxial wafer to an external power source structure or a structure that functions as a power source, and is used to introduce electrical signals (electrons or holes) that drive the light-emitting layer 3 to emit light.
  • the transition layer 213 serves as a transition medium between the first limiting layer 212 and the contact layer 214.
  • the first functional layer 21 may be an N-type semiconductor layer; correspondingly, the second functional layer 22 is a P-type semiconductor layer. Or the first functional layer 21 is a P-type semiconductor layer; correspondingly, the second functional layer 22 is an N-type semiconductor layer.
  • first functional layer 21 as a P-type semiconductor layer
  • second functional layer 22 as an N-type semiconductor layer
  • the substrate 1 Since the second functional layer 22 is located between the substrate 1 and the light-emitting layer 3, the substrate 1 also needs to be an N-type semiconductor matching the second functional layer 22. Specifically, the substrate 1 may be an N-type GaAs single wafer, which serves as a base for the epitaxial wafer superstructure.
  • the second confinement layer 222 of the second functional layer 22 is N-type non-doped Al x In 1-x P matched with N-type GaAs, and has a thickness of 500-5000 nm.
  • the second waveguide layer 221 is N-type undoped (Al y Ga 1-y ) x In 1-x P, and has a thickness of 50-250 nm.
  • the light emitting layer 3 that is, the quantum well layer, is Ga z In 1-z P, and has a thickness of 2 to 200 nm.
  • the wavelength of the laser light radiated from the light-emitting layer 3 is 620-670 nm.
  • the first waveguide layer 211 of the first functional layer 21 is P-type (Al y Ga 1-y ) x In 1-x P, and its thickness is 50 to 250 nm.
  • the first waveguide layer 211 is doped with Mg, and the doping concentration of Mg is 5 ⁇ 10 17 cm -3 .
  • the first confinement layer 212 is P-type Al x In 1-x P, and its thickness is 500-5000 nm.
  • the first confinement layer 212 is doped with Mg, and the doping concentration of Mg is 3 ⁇ 10 18 cm -3 . It can be seen that the Mg concentration doped in the first waveguide layer 211 is less than the Mg concentration in the first confinement layer 212.
  • the transition layer 213 and the contact layer 214 correspond to the first functional layer 21.
  • the transition layer 213 and the contact layer 214 correspond to a P-type semiconductor layer
  • the first functional layer 21 is In the case of an N-type semiconductor layer
  • the transition layer 213 and the contact layer 214 correspond to N-type semiconductor layers.
  • the transition layer 213 is P-type non-doped (Al y Ga 1-y ) x In 1- x P, and its thickness is 50-250 nm.
  • the contact layer 214 is P-type undoped GaAs, and its thickness is 100-500 nm.
  • the contact layer 214 may be doped, for example, doped with Mg, Zn, etc., to improve the conductivity of the contact layer 214.
  • the AlGaInP-based materials mentioned above adopt the element ratio, which can make the functional film layer composed of the corresponding AlGaInP-based materials have good physical or chemical properties to meet the actual needs of epitaxial wafers.
  • FIG. 2 shows the conduction band structure of the epitaxial wafer described in this embodiment, where segment A represents the concentration of Mg doped in the first waveguide layer 211 and segment B represents the concentration of Mg doped in the first confinement layer 212. It can be seen that by doping the first waveguide layer 211 and the first confinement layer 212 with different concentrations of Mg, where the Mg concentration doped in the first waveguide layer 211 is less than the Mg concentration in the first confinement layer 212, it can be effectively increased The conduction band steps of the first waveguide layer 211 and the first confinement layer 212 reduce current leakage and improve the electro-optical conversion efficiency of the epitaxial wafer.
  • FIG. 3 is a schematic structural view of another embodiment of an epitaxial wafer according to the present invention.
  • the efficiency of generating electron or hole carriers in the functional layer 2 doped with Mg is not high, and the effect of improving the electro-optic conversion efficiency of epitaxial wafers by doping Mg is limited.
  • the activation energy of Zn (100 ⁇ 125meV) is less than the activation energy of Mg. Therefore, the efficiency of generating electron or hole carriers in the Zn-doped functional layer 2 is relatively high, and the effect of improving the electro-optic conversion efficiency of the epitaxial wafer Better than Mg.
  • the present embodiment is different from the above-described embodiment in that the first restriction layer 212 includes a first sub-restriction layer 2121 and a second sub-restriction layer 2122.
  • the first sub-confining layer 2121 is located on the side of the first waveguide layer 211 away from the light emitting layer 3
  • the second sub-confining layer 2122 is located on the side of the first sub-limiting layer 2121 away from the first waveguide layer 211.
  • the first sub-confining layer 2121 relatively close to the first waveguide layer 211 is doped with Mg, while the second sub-confining layer 2122 relatively far from the first waveguide layer 211 is doped with Zn.
  • doping Mg and Zn to improve the electro-optical conversion efficiency of the epitaxial wafer it can effectively prevent Zn from diffusing into the light-emitting layer 3 and affecting the performance of the light-emitting layer 3.
  • the first functional layer 21 may be an N-type semiconductor layer; correspondingly, the second functional layer 22 is a P-type semiconductor layer. Or the first functional layer 21 is a P-type semiconductor layer; correspondingly, the second functional layer 22 is an N-type semiconductor layer.
  • first functional layer 21 as a P-type semiconductor layer
  • second functional layer 22 as an N-type semiconductor layer
  • the substrate 1 Since the second functional layer 22 is located between the substrate 1 and the light-emitting layer 3, the substrate 1 also needs to be an N-type semiconductor matching the second functional layer 22. Specifically, the substrate 1 may be an N-type GaAs single wafer, which serves as a base for the epitaxial wafer superstructure.
  • the second confinement layer 222 of the second functional layer 22 is N-type non-doped Al x In 1-x P matched with N-type GaAs, and has a thickness of 500-5000 nm.
  • the second waveguide layer 221 is N-type undoped (Al y Ga 1-y ) x In 1-x P and has a thickness of 50-250 nm.
  • the light emitting layer 3 that is, the quantum well layer, is Ga z In 1-z P, and has a thickness of 2 to 200 nm.
  • the wavelength of the laser light radiated from the light-emitting layer 3 is 620-670 nm.
  • the first waveguide layer 211 of the first functional layer 21 is P-type (Al y Ga 1-y ) x In 1-x P, and its thickness is 50 to 250 nm.
  • the first waveguide layer 211 is doped with Mg, and the doping concentration of Mg is 5 ⁇ 10 17 cm -3 .
  • the first sub-limiting layer 2121 of the first limiting layer 212 is a P-type Al x In 1-x P, and its thickness is 10 to 500 nm.
  • the first sub-limiting layer 2121 is doped with Mg, and the doping concentration is 3 ⁇ 10 18 cm -3 .
  • the second sub-limiting layer 2122 is P-type Al x In 1-x P, and its thickness is 1000-7000 nm.
  • the second sub-limiting layer 2122 is doped with Zn, and the doping concentration is 3 ⁇ 10 18 cm ⁇ 3 .
  • the Mg concentration doped by the first sub-confining layer 2121 is equal to the Zn concentration doped by the second sub-confining layer 2122, and is equal to the doping in the first restricting layer 212 in the above embodiment Mg concentration. This is to make the atomic concentration of the first confinement layer 212 doped greater than the atomic concentration of the first waveguide layer 211.
  • the corresponding technical effects have been described in detail in the above embodiments, and will not be repeated here.
  • the transition layer 213 and the contact layer 214 correspond to the first functional layer 21.
  • the transition layer 213 and the contact layer 214 correspond to a P-type semiconductor layer
  • the first functional layer 21 is In the case of an N-type semiconductor layer
  • the transition layer 213 and the contact layer 214 correspond to N-type semiconductor layers.
  • the transition layer 213 is P-type non-doped (Al y Ga 1-y ) x In 1- x P, and its thickness is 50-250 nm.
  • the contact layer 214 is P-type undoped GaAs, and its thickness is 100-500 nm.
  • the contact layer 214 may also be doped, for example, doped with Mg, Zn, etc., to improve the conductive performance of the contact layer 214.
  • FIG. 4 shows the conduction band structure of the epitaxial wafer described in this embodiment, where segment A represents the concentration of Mg doped in the first waveguide layer 211, and segment C represents the concentration of Mg doped in the first sub-confining layer 2121 and the second The concentration of Zn doped in the confinement layer 2122.
  • Zn is used to increase the efficiency of generating carriers in the epitaxial wafer, thereby improving the epitaxial wafer
  • the electro-optical conversion efficiency can also effectively prevent Zn from diffusing into the light-emitting layer 3 and affecting the performance of the light-emitting layer 3.
  • FIG. 5 is a schematic structural diagram of an embodiment of the first limiting layer of the present invention.
  • the first confinement layer 212 also includes a barrier layer 4.
  • the barrier layer 4 is located between the first sub-confining layer 2121 and the second sub-confining layer 2122 and is used to prevent Zn in the second sub-confining layer 2122 from diffusing into the light emitting layer 3. Meanwhile, in the case where the contact layer 214 is doped with Zn, the barrier layer 4 can also prevent the Zn in the contact layer 214 from diffusing into the light-emitting layer 3.
  • the contact layer 214 of the first functional layer 21 is located on the side of the second sub-limiting layer 2122 away from the first sub-limiting layer 2121, a transition layer 213 is provided between the contact layer 214 and the second sub-limiting layer 2122, and the barrier layer 4 and the transition layer 213 are used to increase the distance between the contact layer 214 and the light-emitting layer 3.
  • the contact layer 214 is doped with Zn, the distance between the contact layer 214 and the light-emitting layer 3 increases, which can make it difficult for Zn to diffuse into the light-emitting layer 3, and thus avoids the Zn pair doped in the contact layer 214 Influence of the laser performance of the luminescent layer 3.
  • the barrier layer 4 may be made of AlGaInP-based materials, etc., and the barrier layer 4 may be made of undoped AlGaInP material.
  • the inventor found through a large number of experiments that, compared with other materials, the barrier layer 4 of AlGaInP-based material is used to prevent Zn from diffusing into the light-emitting layer 3 better.
  • FIG. 6 is a schematic structural diagram of an embodiment of a barrier layer according to the present invention.
  • the barrier layer 4 includes a first barrier layer 41 and a second barrier layer 42.
  • the first barrier layer 41 is doped with Mg
  • the second barrier layer 42 is doped with Zn.
  • the barrier layer 4 is a superlattice structure in which at least one first barrier layer 41 and at least one second barrier layer 42 are alternately stacked and paired.
  • the barrier layer 4 includes at least one first barrier layer 41 and at least one second barrier layer 42, one layer of the first barrier layer 41 and one layer of the second barrier layer 42 are a pair, that is, the first barrier layer The number of layers of 41 and the second barrier layer 42 is equal.
  • the barrier layer 4 also assumes a form in which the first barrier layer 41 and the second barrier layer 42 are alternately stacked, that is, the same pair of the first barrier layer 41 and the second barrier layer 42 are stacked on each other, and are combined with the other pairs of the first barrier layer 41 and the The second barrier layers 42 are stacked on each other, and the first barrier layer 41, the second barrier layer 42, the first barrier layer 41, the second barrier layer 42, the first barrier layer 41, ... are stacked in this order.
  • the first barrier layer 41 is a superlattice structure of AlGaInP doped with Mg
  • the second barrier layer 42 is a superlattice structure of AlGaInP doped with Zn, wherein the doping concentration of Mg or Zn is 1 ⁇ 10 17 ⁇ 5 ⁇ 10 18 cm -3 .
  • the first barrier layer 41 and the second barrier layer 42 have the same thickness and are 0.5-20 nm.
  • the barrier layer 4 includes a total of 1-20 pairs of the first barrier layer 41 and the second barrier layer 42. Among them, the specific structural form of the superlattice structure is within the understanding of those skilled in the art, and will not be repeated here.
  • the diffusion coefficient of Mg or Zn in the AlGaInP material with superlattice structure is relatively low, it has a relatively steep doping edge, which can reduce the doping atoms diffused into the light-emitting layer 3, thereby reducing the diffusion of dopant atoms into the light-emitting layer 3 The impact on the performance of the light-emitting layer 3.
  • the first barrier layer 41 of the first layer is located on the first sub-confining layer 2121, and subsequent layers of other barrier layers 4 are sequentially stacked on the first On the barrier layer 41, the distance by which Zn diffuses into the light-emitting layer 3 is increased, thereby reducing the diffusion of Zn into the light-emitting layer 3.
  • FIG. 7 shows the conduction band structure of the epitaxial wafer described in this embodiment, where segment A represents the concentration of Mg doped in the first waveguide layer 211, and segment D represents the first barrier layer 41 and the second barrier layer 42 of the barrier layer 4 Paired superlattice structure to reduce the diffusion of doped atoms Zn. It can be seen that, by adding the barrier layer 4 in this embodiment, the doping atoms can be effectively prevented from diffusing into the light-emitting layer 3.
  • the barrier layer 4 adopts a superlattice structure in which the first barrier layer 41 and the second barrier layer 42 are paired, so that the diffusion coefficient of the doped atoms in the superlattice structure is relatively low, which further prevents the doped atoms from diffusing into light emission Layer 3 to reduce the influence of doping atoms diffused into the light-emitting layer 3 on the performance of the light-emitting layer 3.
  • FIG. 8 is a schematic structural diagram of an embodiment of a semiconductor laser according to the present invention.
  • the semiconductor laser 5 includes an epitaxial wafer 51, and the epitaxial wafer 51 is irradiated with laser light to realize the function of the semiconductor laser 5 to output laser light.
  • the specific structural form of the epitaxial wafer 51 has been elaborated in the above embodiment, and will not be repeated here.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

一种外延晶片以及半导体激光器，涉及半导体技术领域。外延晶片包括：衬底(1)；功能层(2)，功能层(2)位于衬底(1)上；其中，功能层(2)中的至少部分层体掺杂有Mg；发光层(3)，发光层(3)位于功能层(2)中，功能层(2)用于驱动发光层(3)发光。能够提高应用外延晶片的激光器的特征温度，进而提高其电光转换效率。

Description

外延晶片以及半导体激光器 技术领域
本发明涉及半导体技术领域，特别是涉及一种外延晶片以及半导体激光器。
背景技术
AlGaInP四元化合物材料广泛应用于高亮度红光发光二极管及半导体激光器，已经成为红光发光器件的主流材料。但是相比于早期使用的AlGaAs材料，AlGaInP材料体系本身也有其缺点：AlGaInP/GaInP异质结的导带带阶很小，最大值约270meV，小于AlGaAs材料的350meV，因此电子势垒相对较低，容易形成泄露电流，使得激光器阈值电流加大，尤其是在高温及大电流工作中更为明显。并且AlGaInP材料由于合金散射，其热阻远高于AlGaAs材料，因此工作中产热较多，容易导致结温及腔面温度过高。同时，AlGaInP材料载流子的有效质量及态密度高于AlGaAs材料，激射时需要更高的透明电流密度。上述原因使得应用AlGaInP材料体系的激光器的特征温度较低，连续工作时电光转换效率较低。
发明内容
有鉴于此，本发明主要解决的技术问题是提供一种外延晶片以及半导体激光器，能够提高应用本发明外延晶片的激光器的特征温度，进而提高其电光转换效率。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种外延晶片，该外延晶片包括：衬底；功能层，功能层位于衬底上；其中， 功能层中的至少部分层体掺杂有Mg；发光层，发光层位于功能层中，功能层用于驱动发光层发光。
在本发明的一实施例中，功能层包括第一功能层和第二功能层，第一功能层、发光层以及第二功能层沿靠近衬底的方向依次层叠于衬底上。
在本发明的一实施例中，第一功能层包括第一波导层和第一限制层，第一波导层位于发光层远离第二功能层的一侧，第一限制层位于第一波导层远离发光层的一侧，并且第一波导层和第一限制层掺杂有Mg。
在本发明的一实施例中，第一波导层中的Mg浓度小于第一限制层中的Mg浓度。
在本发明的一实施例中，第一限制层包括第一子限制层和第二子限制层，第一子限制层位于第一波导层远离发光层的一侧，第二子限制层位于第一子限制层远离第一波导层的一侧；其中，第一子限制层掺杂有Mg，第二子限制层掺杂有Zn。
在本发明的一实施例中，第一限制层还包括阻隔层，阻隔层位于第一子限制层和第二子限制层之间。
在本发明的一实施例中，阻隔层包括第一阻隔层和第二阻隔层，第一阻隔层掺杂有Mg，第二阻隔层掺杂有Zn，阻隔层为至少一层第一阻隔层和至少一层第二阻隔层交替层叠并且成对的超晶格结构。
在本发明的一实施例中，第一功能层还包括接触层，接触层位于第二子限制层远离第一子限制层的一侧，接触层和第二子限制层之间设置有过渡层，阻隔层和过渡层用于增大接触层与发光层之间的距离；其中，接触层掺杂有Zn。
在本发明的一实施例中，阻隔层由无掺杂的AlGaInP材料构成。
在本发明的一实施例中，第一功能层为N型半导体层，第二功能层为P型半导体层；或第一功能层为P型半导体层，第二功能层为N型半导体层。
为解决上述技术问题，本发明采用的又一个技术方案是：提供一种半导体激光器，该半导体激光器包括如上述实施例所阐述的外延晶片。
本发明的有益效果是：区别于现有技术，本发明提供一种外延晶片，该外延晶片包括衬底以及位于衬底上的功能层。该外延晶片还包括发光层，发光层位于功能层中，功能层用于驱动发光层发光。其中，功能层中的至少部分层体掺杂有Mg，以提高该至少部分层体的准费米能级位置，从而提高阻挡电流泄露的有效势垒，因此能够提高应用本发明外延晶片的激光器的特征温度，进而提高其电光转换效率。
附图说明
图1是本发明外延晶片一实施例的结构示意图；
图2是图1所示外延晶片的导带结构示意图；
图3是本发明外延晶片另一实施例的结构示意图；
图4是图3所示外延晶片的导带结构示意图；
图5是本发明第一限制层一实施例的结构示意图；
图6是本发明阻隔层一实施例的结构示意图；
图7是本发明外延晶片导带结构一实施例的示意图；
图8是本发明半导体激光器一实施例的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。
为解决现有技术中激光器的特征温度较低以及电光转换效率较低的技术问题，本发明的一实施例提供一种外延晶片，该外延晶片包括：衬底；功能层，功能层位于衬底上；其中，功能层中的至少部分层体掺杂有Mg；发光层，发光层位于功能层中，功能层用于驱动发光层发光。以下进行详细阐述。
请参阅图1，图1是本发明外延晶片一实施例的结构示意图。
在一实施例中，外延晶片包括衬底1以及位于衬底1上的功能层2，并且外延晶片还包括发光层3，发光层3位于功能层2中，功能层2用 于驱动发光层3发光，以满足使用需求。例如外延晶片应用于激光器中，发光层3用于产生足够的光增益，并发光能够实现激光器输出所需的激光出射波长。
外延晶片的功能层2中至少部分层体掺杂有Mg，以提高该至少部分层体的准费米能级位置，从而提高阻挡电流泄露的有效势垒，减小电流泄露，进而提高其电光转换效率，降低产热。
在一实施例中，功能层2包括第一功能层21和第二功能层22。第一功能层21、发光层3以及第二功能层22沿靠近衬底1的方向依次层叠于衬底1上，即第二功能层22位于衬底1上，发光层3位于第二功能层22上，第一功能层21位于发光层3上。
进一步地，第一功能层21包括第一波导层211和第一限制层212。第一波导层211位于发光层3远离第二功能层22的一侧，第一限制层212位于第一波导层211远离发光层3的一侧，并且第一波导层211和第一限制层212掺杂有Mg，用于提高第一波导层211和第一限制层212的准费米能级位置，从而提高阻挡电流泄露的有效势垒。
需要说明的是，第一波导层211中所掺杂的Mg浓度小于第一限制层212中的Mg浓度。发明人发现，第一波导层211和第一限制层212中所掺杂的Mg浓度如是设置，能够最大限度地提高第一波导层211和第一限制层212的有效势垒，从而最大限度地减小泄露电流。另外高掺杂的第一限制层212，可进一步提高材料的电导率，降低激光器的串联电阻，提高激光器电光转换效率，降低产热。
进一步地，第二功能层22包括第二波导层221和第二限制层222。第二波导层221位于发光层3远离第一功能层21的一侧，第二限制层222位于第二波导层221远离发光层3的一侧。其中，第二限制层222位于衬底1上。
需要说明的是，第一波导层211和第二波导层221用于向发光层3传输电子或空穴，电子和空穴在发光层3相遇并配对，成键后的电子和空穴释放能量并被发光层3吸收，从而使得发光层3辐射激光。第一限制层212和第二限制层222的折射率小于第一波导层211和第二波导层 221。发光层3辐射的激光经过第一波导层211和第二波导层221，在第一波导层211、第二波导层221与第一限制层212、第二限制层222的交界面上发生全反射，使得发光层3辐射的激光光场限制在发光层3、第一波导层211以及第二波导层221中。
第一功能层21还包括过渡层213和接触层214。过渡层213位于第一限制层212远离第一波导层211的一侧，接触层214位于过渡层213远离第一限制层212的一侧。接触层214作为外延晶片与外部电源结构或起到电源功能的结构连接的媒介，用于导入驱动发光层3发光的电信号(电子或空穴)。而过渡层213则作为第一限制层212与接触层214的过渡媒介。
可以理解的是，第一功能层21可以为N型半导体层；对应地，第二功能层22为P型半导体层。或第一功能层21为P型半导体层；对应地，第二功能层22为N型半导体层。
以下以第一功能层21为P型半导体层，第二功能层22为N型半导体层为例，阐述外延晶片的具体结构：
由于第二功能层22位于衬底1与发光层3之间，衬底1也需为与第二功能层22匹配的N型半导体。具体地，衬底1可以为N型的GaAs单晶片，其作为外延晶片上层结构的基底。
第二功能层22的第二限制层222为与N型GaAs匹配的N型非掺杂Al xIn 1-xP，厚度为500～5000nm。第二波导层221为N型非掺杂(Al yGa 1-y) xIn 1-xP，厚度为50～250nm。
发光层3，即量子阱层，其为Ga zIn 1-zP，厚度为2～200nm。发光层3所辐射激光的波长为620～670nm。
第一功能层21的第一波导层211为P型(Al yGa 1-y) xIn 1-xP，其厚度为50～250nm。第一波导层211中掺杂有Mg，其中Mg的掺杂浓度为5×10 17cm -3。第一限制层212为P型Al xIn 1-xP，其厚度为500～5000nm。第一限制层212中掺杂有Mg，其中Mg的掺杂浓度为3×10 18cm -3。可见，第一波导层211中所掺杂的Mg浓度小于第一限制层212中的Mg浓度。
过渡层213、接触层214与第一功能层21对应，当第一功能层21为P型半导体层时，过渡层213、接触层214对应为P型半导体层，而当第一功能层21为N型半导体层时，过渡层213、接触层214对应为N型半导体层。在本实施例中，过渡层213为P型非掺杂(Al yGa 1-y) xIn 1- xP，其厚度为50～250nm。接触层214为P型非掺杂GaAs，其厚度为100～500nm。接触层214可以进行掺杂，例如掺杂Mg、Zn等，以改善接触层214的导电性能。
其中，0<x<0.52，0<y<0.8，0.3<z<0.7(下文也同样适用)。发明人发现上文所涉及的AlGaInP系材料采用如是元素配比，能够使得由相应AlGaInP系材料构成的功能膜层具备良好的物理或化学性能，以满足外延晶片的实际使用需求。
图2展示了本实施例所阐述外延晶片的导带结构，其中A段表示第一波导层211中掺杂Mg的浓度，B段表示第一限制层212中掺杂Mg的浓度。可见，通过在第一波导层211和第一限制层212掺杂不同浓度的Mg，其中，第一波导层211中所掺杂的Mg浓度小于第一限制层212中的Mg浓度，能够有效提高第一波导层211和第一限制层212的导带带阶，减少电流泄露，提高外延晶片的电光转换效率。
请参阅图3，图3是本发明外延晶片另一实施例的结构示意图。
由于Mg的活化能(190meV)较高，掺杂Mg的功能层2部分产生电子或空穴载流子的效率不高，通过掺杂Mg来提高外延晶片的电光转换效率的提高效果有限。而Zn的活化能(100～125meV)小于Mg的活化能，因此掺杂Zn的功能层2部分产生电子或空穴载流子的效率较高，其提高外延晶片的电光转换效率的提高效果要优于Mg。
有鉴于此，本实施例与上述实施例的不同之处在于，第一限制层212包括第一子限制层2121和第二子限制层2122。第一子限制层2121位于第一波导层211远离发光层3的一侧，第二子限制层2122位于第一子限制层2121远离第一波导层211的一侧。
由于较Mg而言，Zn在AlGaInP系材料中的扩散系数较大，其容易扩散进入发光层3，产生光吸收，致使对外延晶片辐射激光的性能造成 不良影响。有鉴于此，本实施例中相对靠近第一波导层211的第一子限制层2121中掺杂Mg，而相对远离第一波导层211的第二子限制层2122中掺杂有Zn。如此一来，在利用掺杂Mg、Zn提高外延晶片电光转换效率的同时，能够有效防止Zn扩散进入发光层3，影响发光层3的性能。
正如上述实施例所述，第一功能层21可以为N型半导体层；对应地，第二功能层22为P型半导体层。或第一功能层21为P型半导体层；对应地，第二功能层22为N型半导体层。
以下以第一功能层21为P型半导体层，第二功能层22为N型半导体层为例，阐述外延晶片的具体结构：
由于第二功能层22位于衬底1与发光层3之间，衬底1也需为与第二功能层22匹配的N型半导体。具体地，衬底1可以为N型的GaAs单晶片，其作为外延晶片上层结构的基底。
第二功能层22的第二限制层222为与N型GaAs匹配的N型非掺杂Al xIn 1-xP，厚度为500～5000nm。第二波导层221为N型非掺杂(Al yGa 1-y) xIn 1-xP，厚度为50～250nm。
发光层3，即量子阱层，其为Ga zIn 1-zP，厚度为2～200nm。发光层3所辐射激光的波长为620～670nm。
第一功能层21的第一波导层211为P型(Al yGa 1-y) xIn 1-xP，其厚度为50～250nm。第一波导层211中掺杂有Mg，其中Mg的掺杂浓度为5×10 17cm -3。第一限制层212的第一子限制层2121为P型Al xIn 1-xP，其厚度为10～500nm。第一子限制层2121中掺杂有Mg，并且掺杂浓度为3×10 18cm -3。第二子限制层2122为P型Al xIn 1-xP，其厚度为1000～7000nm。第二子限制层2122中掺杂有Zn，并且掺杂浓度为3×10 18cm -3。
需要说明的是，本实施例中第一子限制层2121所掺杂的Mg浓度与第二子限制层2122所掺杂的Zn浓度相等，并且等于上述实施例中第一限制层212中掺杂的Mg浓度。其为的是使第一限制层212所掺杂的原子浓度大于第一波导层211所掺杂原子浓度，对应的技术效果已在上述实施例中详细阐述，在此就不再赘述。
过渡层213、接触层214与第一功能层21对应，当第一功能层21 为P型半导体层时，过渡层213、接触层214对应为P型半导体层，而当第一功能层21为N型半导体层时，过渡层213、接触层214对应为N型半导体层。在本实施例中，过渡层213为P型非掺杂(Al yGa 1-y) xIn 1- xP，其厚度为50～250nm。接触层214为P型非掺杂GaAs，其厚度为100～500nm。当然，接触层214也可以进行掺杂，例如掺杂Mg、Zn等，以改善接触层214的导电性能。
图4展示了本实施例所阐述外延晶片的导带结构，其中A段表示第一波导层211中掺杂Mg的浓度，C段表示第一子限制层2121掺杂的Mg浓度与第二子限制层2122掺杂的Zn浓度。可见，通过在第一限制层212的第一子限制层2121中掺杂Mg，第二子限制层2122中掺杂有Zn，利用Zn提高外延晶片中产生载流子的效率，从而提高外延晶片的电光转换效率，同时还能有效防止Zn扩散进入发光层3，影响发光层3的性能。
请参阅图5，图5是本发明第一限制层一实施例的结构示意图。
在替代实施例中，第一限制层212还包括阻隔层4。阻隔层4位于第一子限制层2121和第二子限制层2122之间，用于防止第二子限制层2122中的Zn扩散进入发光层3。同时，在接触层214掺杂有Zn的情况下，阻隔层4也能够防止接触层214中的Zn扩散进入发光层3。
进一步地，第一功能层21的接触层214位于第二子限制层2122远离第一子限制层2121的一侧，接触层214和第二子限制层2122之间设置有过渡层213，阻隔层4和过渡层213用于增大接触层214与发光层3之间的距离。在接触层214掺杂有Zn的情况下，接触层214与发光层3之间的距离增大，能够使得Zn较难扩散进入发光层3，也就避免了接触层214中掺杂的Zn对发光层3激光性能的影响。
优选地，阻隔层4可以采用AlGaInP系材料等，阻隔层4可以由无掺杂的AlGaInP材料构成。发明人通过大量实验发现，与其他材料相比，选用AlGaInP系材料的阻隔层4其防止Zn扩散进入发光层3的效果更佳。
请参阅图6，图6是本发明阻隔层一实施例的结构示意图。
在替代实施例中，与上述实施例不同的是：阻隔层4包括第一阻隔层41和第二阻隔层42。第一阻隔层41掺杂有Mg，第二阻隔层42掺杂有Zn。并且，阻隔层4为至少一层的第一阻隔层41和至少一层的第二阻隔层42交替层叠并且成对的超晶格结构。
也就是说，阻隔层4包括至少一层第一阻隔层41和至少一层第二阻隔层42，一层第一阻隔层41和一层第二阻隔层42为一对，即第一阻隔层41和第二阻隔层42的层数相等。阻隔层4还呈现第一阻隔层41和第二阻隔层42交替层叠的形式，即同一对的第一阻隔层41和第二阻隔层42相互层叠，并与其他对的第一阻隔层41和第二阻隔层42相互层叠，整体上呈现第一阻隔层41、第二阻隔层42、第一阻隔层41、第二阻隔层42、第一阻隔层41……如是依次层叠的形式。
进一步地，第一阻隔层41为掺杂有Mg的AlGaInP的超晶格结构，第二阻隔层42为掺杂有Zn的AlGaInP的超晶格结构，其中Mg或Zn的掺杂浓度为1×10 17～5×10 18cm -3。第一阻隔层41和第二阻隔层42的厚度相等且为0.5～20nm。阻隔层4一共包括1～20对成对的第一阻隔层41和第二阻隔层42。其中，超晶格结构的具体结构形式在本领域技术人员的理解范畴之内，在此就不再赘述。
由于Mg或Zn在超晶格结构的AlGaInP材料中的扩散系数相对较低，拥有比较陡峭的掺杂边，能够减少扩散进入发光层3的掺杂原子，从而降低掺杂原子扩散进入发光层3所带来的对发光层3性能的影响。并且，为进一步减少扩散进入发光层3的掺杂原子，例如Zn，第一层的第一阻隔层41位于第一子限制层2121上，后续其他阻隔层4的层体依次层叠于该第一阻隔层41上，以增大Zn扩散进入发光层3的距离，从而减少Zn扩散进入发光层3。
图7展示了本实施例所阐述外延晶片的导带结构，其中A段表示第一波导层211中掺杂Mg的浓度，D段表示阻隔层4的第一阻隔层41、第二阻隔层42成对的超晶格结构以减少掺杂原子Zn扩散的情况。可见，本实施例通过增设阻隔层4，能够有效防止掺杂原子扩散进入发光层3。同时，阻隔层4采用第一阻隔层41、第二阻隔层42成对的超晶格结构， 使得超晶格结构中的掺杂原子扩散系数相对较低，进一步地防止掺杂原子扩散进入发光层3，以降低掺杂原子扩散进入发光层3所带来的对发光层3性能的影响。
请参阅图8，图8是本发明半导体激光器一实施例的结构示意图。
在一实施例中，半导体激光器5包括外延晶片51，外延晶片51受激辐射激光，以实现半导体激光器5输出激光的功能。其中，外延晶片51的具体结构形式已在上述实施例中详细阐述，在此就不再赘述。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (11)

  1. 一种外延晶片，其特征在于，所述外延晶片包括：
    衬底；
    功能层，所述功能层位于所述衬底上；其中，所述功能层中的至少部分层体掺杂有Mg；
    发光层，所述发光层位于所述功能层中，所述功能层用于驱动所述发光层发光。
  2. 根据权利要求1所述的外延晶片，其特征在于，所述功能层包括第一功能层和第二功能层，所述第一功能层、所述发光层以及所述第二功能层沿靠近所述衬底的方向依次层叠于所述衬底上。
  3. 根据权利要求2所述的外延晶片，其特征在于，所述第一功能层包括第一波导层和第一限制层，所述第一波导层位于所述发光层远离所述第二功能层的一侧，所述第一限制层位于所述第一波导层远离所述发光层的一侧，并且所述第一波导层和所述第一限制层掺杂有Mg。
  4. 根据权利要求3所述的外延晶片，其特征在于，所述第一波导层中的Mg浓度小于所述第一限制层中的Mg浓度。
  5. 根据权利要求3所述的外延晶片，其特征在于，所述第一限制层包括第一子限制层和第二子限制层，所述第一子限制层位于所述第一波导层远离所述发光层的一侧，所述第二子限制层位于所述第一子限制层远离所述第一波导层的一侧；其中，所述第一子限制层掺杂有Mg，所述第二子限制层掺杂有Zn。
  6. 根据权利要求5所述的外延晶片，其特征在于，所述第一限制层还包括阻隔层，所述阻隔层位于所述第一子限制层和所述第二子限制层之间。
  7. 根据权利要求6所述的外延晶片，其特征在于，所述阻隔层包括第一阻隔层和第二阻隔层，所述第一阻隔层掺杂有Mg，所述第二阻隔层掺杂有Zn，所述阻隔层为至少一层所述第一阻隔层和至少一层所述第二阻隔层交替层叠并且成对的超晶格结构。
  8. 根据权利要求6所述的外延晶片，其特征在于，所述第一功能层还包括接触层，所述接触层位于所述第二子限制层远离所述第一子限制层的一侧，所述接触层和所述第二子限制层之间设置有过渡层，所述阻隔层和所述过渡层用于增大所述接触层与所述发光层之间的距离；其中，所述接触层掺杂有Zn。
  9. 根据权利要求6所述的外延晶片，其特征在于，所述阻隔层由无掺杂的AlGaInP材料构成。
  10. 根据权利要求2至9任一项所述的外延晶片，其特征在于，所述第一功能层为N型半导体层，所述第二功能层为P型半导体层；或所述第一功能层为P型半导体层，所述第二功能层为N型半导体层。
  11. 一种半导体激光器，其特征在于，所述半导体激光器包括如权利要求1至10任一项所述的外延晶片。
PCT/CN2019/124469 2019-01-04 2019-12-11 外延晶片以及半导体激光器 WO2020140701A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910009078.2A CN111416278B (zh) 2019-01-04 2019-01-04 外延晶片以及半导体激光器
CN201910009078.2 2019-01-04

Publications (1)

Publication Number Publication Date
WO2020140701A1 true WO2020140701A1 (zh) 2020-07-09

Family

ID=71406888

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/124469 WO2020140701A1 (zh) 2019-01-04 2019-12-11 外延晶片以及半导体激光器

Country Status (2)

Country Link
CN (2) CN111416278B (zh)
WO (1) WO2020140701A1 (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030012241A1 (en) * 2001-06-29 2003-01-16 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
CN1705143A (zh) * 2004-06-03 2005-12-07 日立电线株式会社 半导体发光器件用外延片和半导体发光器件
CN106602404A (zh) * 2016-12-30 2017-04-26 中国工程物理研究院应用电子学研究所 一种半导体激光器及其制作方法
CN107742825A (zh) * 2017-08-25 2018-02-27 华南师范大学 GaN基新型结构激光器及其制作方法
CN108346972A (zh) * 2017-01-24 2018-07-31 山东华光光电子股份有限公司 一种具有超晶格限制层的AlGaInP半导体激光器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0918384B1 (en) * 1995-01-20 2002-12-11 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device and method for fabricating the same
KR100377792B1 (ko) * 1995-09-26 2003-06-11 삼성전자주식회사 반도체레이저다이오드및그제조방법
JP3754120B2 (ja) * 1996-02-27 2006-03-08 株式会社東芝 半導体発光装置
CN103579447B (zh) * 2012-08-03 2016-12-21 同方光电科技有限公司 一种倒装结构发光二极管及其制备方法
CN104269741A (zh) * 2014-09-22 2015-01-07 山东华光光电子有限公司 一种高可靠性的红光半导体激光器
CN104795729B (zh) * 2015-02-14 2018-04-24 太原理工大学 应变平衡有源区梯度势阱层半导体激光器结构

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030012241A1 (en) * 2001-06-29 2003-01-16 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
CN1705143A (zh) * 2004-06-03 2005-12-07 日立电线株式会社 半导体发光器件用外延片和半导体发光器件
CN106602404A (zh) * 2016-12-30 2017-04-26 中国工程物理研究院应用电子学研究所 一种半导体激光器及其制作方法
CN108346972A (zh) * 2017-01-24 2018-07-31 山东华光光电子股份有限公司 一种具有超晶格限制层的AlGaInP半导体激光器
CN107742825A (zh) * 2017-08-25 2018-02-27 华南师范大学 GaN基新型结构激光器及其制作方法

Also Published As

Publication number Publication date
CN116247518A (zh) 2023-06-09
CN111416278A (zh) 2020-07-14
CN111416278B (zh) 2023-05-05

Similar Documents

Publication Publication Date Title
US5488233A (en) Semiconductor light-emitting device with compound semiconductor layer
US6169296B1 (en) Light-emitting diode device
US5617446A (en) Surface-emitting semiconductor light emitting device
JP3698402B2 (ja) 発光ダイオード
JP4505147B2 (ja) 相分離の少ないｉｉｉ族窒化物４元材料系を用いた半導体構造体および加工方法
TWI403002B (zh) 半導體發光元件
US20060081873A1 (en) High temperature light-emitting diodes
JP2001223384A (ja) 半導体発光素子
JP2007066981A (ja) 半導体装置
JPH04212479A (ja) 半導体発光ダイオード
JP3872398B2 (ja) 発光素子の製造方法及び発光素子
CN108346972A (zh) 一种具有超晶格限制层的AlGaInP半导体激光器
KR100679235B1 (ko) 반도체 발광소자 및 그 제조방법
JP4288030B2 (ja) Ｉｉｉ族窒化物４元材料系を用いた半導体構造体
CN116191200A (zh) 一种具有声子散射调控层的半导体激光元件
WO2020140701A1 (zh) 外延晶片以及半导体激光器
CN114006268B (zh) 一种多有源区半导体结构及其制备方法
JPH11284280A (ja) 半導体レーザ装置及びその製造方法ならびにｉｉｉ−ｖ族化合物半導体素子の製造方法
JP2003282946A (ja) 発光ダイオード装置及びその製造方法
JPH10294533A (ja) 窒化物化合物半導体レーザ及びその製造方法
CN113851563A (zh) 一种薄膜型半导体芯片结构及应用其的光电器件
JP2011205148A (ja) 半導体装置
TWI826050B (zh) 面射型雷射裝置及其製造方法
JP3674410B2 (ja) 化合物半導体発光素子及び発光ダイオードアレイ
JP3852852B2 (ja) 発光ダイオード

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19907410

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19907410

Country of ref document: EP

Kind code of ref document: A1