WO2020140567A1

WO2020140567A1 - Biomimetic microcantilever structure and manufacturing method therefor, and piezoresistive sensor

Info

Publication number: WO2020140567A1
Application number: PCT/CN2019/113172
Authority: WO
Inventors: 韩志武; 赵宇锋; 侯涛; 刘富; 刘云; 王跃桥; 宋阳; 游子跃
Original assignee: 吉林大学
Priority date: 2018-12-30
Filing date: 2019-10-25
Publication date: 2020-07-09
Also published as: CN109696185B; CN109696185A

Abstract

A biomimetic microcantilever structure (1) and manufacturing method therefor, and a piezoresistive sensor. The biomimetic microcantilever structure (1) comprises: a silicon substrate (2) in the form of a cantilever structure, biomimetic slit groups (3) provided in the silicon substrate (2), and an on-cantilever varistor (4), a substrate varistor (5), and an electrode lead (6) provided on the upper surface of the silicon substrate (2). The two biomimetic slit groups (3) are symmetrically arranged on the left and right sides of the central axis of the silicon substrate (2). The biomimetic slit group (3) comprises at least one biomimetic slit (7). The biomimetic slit (7) is formed by mimicing the slit sense organs of scorpions. The on-cantilever varistor (4) and the substrate varistor (5) constitute a Wheatstone bridge by means of the electrode lead (6). The biomimetic microcantilever structure (1) capable of hypersensitively sensing microinformation is designed on the basis of the stress amplification principle of slit sense organs at tarsal joints of Heterometrus petersii by using micro-nano manufacturing technology, and has the characteristics of high sensitivity, high detection precision, and easy use in mass production.

Description

Bionic micro-cantilever beam structure, manufacturing method thereof and piezoresistive sensor

Technical field

The present disclosure relates to the technical field of sensor manufacturing, in particular to a bionic micro-cantilever structure, a manufacturing method thereof, and a piezoresistive sensor.

Background technique

In recent years, sensors based on micro-cantilever structure have become a research hotspot in the field of micro-electromechanical systems. The sensor with micro cantilever structure has the characteristics of light structure, sensitive sensing, high resolution, etc. It has a wide range of applications in acceleration detection, quality detection, biochemical composition analysis, etc. The mechanism of micro cantilever beam structure is that the cantilever beam deforms under the action of external force, and the deformation variable is multiplied by the normal elastic coefficient of the cantilever beam, so as to obtain the magnitude of the external force received by the cantilever beam.

Electrical methods for detecting cantilever beam deformation are piezoelectric, capacitive, and piezoresistive. Among them, the piezoresistive type is provided with a varistor sensitive to deformation on the cantilever beam. When the cantilever beam is deformed by force, it will cause the resistance value of the varistor on the beam to change. Through the amplification of the bridge, the deformation of the cantilever beam will be caused. The voltage change is amplified, and the stress value of the cantilever beam is obtained through calculation.

The detection sensitivity of the micro-cantilever depends on the geometry of the cantilever, and the detection bandwidth mainly depends on the first-order natural frequency of the cantilever structure. Sensitivity and bandwidth are often a contradictory quantity. If starting from the geometric dimensions, such as increasing the length of the cantilever beam or reducing the thickness of the cantilever beam, the sensitivity of the cantilever beam will be improved, but the bandwidth of the cantilever beam detection will be reduced accordingly . Therefore, the traditional method of improving the detection sensitivity of the cantilever beam cannot maintain sufficient detection bandwidth of the cantilever beam.

Therefore, the existing technology still needs further improvement.

Summary of the invention

The purpose of the present disclosure is to provide users with a bionic micro-cantilever structure, its manufacturing method and piezoresistive sensor, to overcome the detection sensitivity of the micro-cantilever in the prior art with the increase of the length of the cantilever or the decrease of the thickness, But the detection bandwidth decreases as the length of the cantilever increases or the thickness decreases.

The first embodiment provided by the present disclosure is a bionic micro-cantilever structure, which includes: a silicon substrate with a cantilever beam structure, two bionic hole groups provided in the silicon substrate, and the silicon Varistor on the beam on the upper surface of the substrate, substrate varistor and electrode leads;

The two bionic hole groups are arranged symmetrically on the left and right sides of the central axis of the silicon substrate; each bionic hole group includes: at least one bionic slot;

The bionic seam is bionic based on a scorpion seam receptor;

A Wheatstone bridge is formed between the varistor on the beam and the varistor on the substrate through electrode leads.

Optionally, each bionic slit in the bionic hole slit group is arranged to penetrate the silicon substrate.

Optionally, the two varistors on the two beams are U-shaped and respectively surround the two bionic hole groups.

Optionally, the tips of both sides of each of the bionic seams are designed to be semi-circular according to the appearance characteristics of the bionic seams in the scorpion seam receptor.

Optionally, the silicon substrate in a cantilever beam structure is a T-shaped structure; the substrate varistor and electrode leads are laid out on the surface of the silicon substrate at the upper end of the T-shaped structure, and the beam is pressure-sensitive The resistor and the bionic hole group are both laid out on the surface of the silicon substrate at the lower end of the T-shaped structure.

Optionally, the length of the bionic seam is 10 to 200 microns, the aspect ratio of the bionic seam is 4 to 20, and the distance between the bionic seams is 5 to 100 microns.

Optionally, the width of the varistor region is 5-50 microns, and the thickness is 2-20 microns.

Optionally, the varistor is 5 to 100 microns from the bionic slot group, and the substrate varistor is 100 to 500 microns from the varistor on the beam.

Optionally, the bionic seams are arranged parallel to each other.

Optionally, the length, aspect ratio and distance between the bionic seams are different.

Optionally, the length, aspect ratio and distance between the bionic seams are the same.

The second embodiment provided by the present disclosure is a method for manufacturing a bionic micro-cantilever structure, which includes:

Using silicon wafer as the substrate, a silicon dioxide insulating layer is oxidized on the surface of the silicon wafer;

Lithographically pattern the substrate varistor and beam varistor pattern on the silicon wafer, and fabricate the substrate varistor and beam varistor on the substrate varistor pattern area;

Photoetching the varistor lead pattern, using a metal sputtering process to sputter a layer of metal film, and forming a lead between the substrate varistor and the beam varistor after etching and stripping;

Bionic hole group penetrating through the silicon wafer is etched on the silicon wafer;

Ion etching from the back of the silicon wafer releases the cantilever beam structure.

Optionally, the step of etching the bionic hole group through the silicon wafer on the silicon wafer includes:

A mask pattern of the cantilever beam and two bionic hole groups is formed by photolithography on the front surface of the silicon wafer, and the bionic hole groups are etched by dry method.

Optionally, the step of ion etching from the back of the silicon wafer to release the cantilever beam structure includes:

The deep reactive ion etching of the silicon wafer is performed from the back of the silicon wafer to release the cantilever beam structure.

A third embodiment provided by the present disclosure is a piezoresistive sensor, which includes: a base and the bionic micro-cantilever structure provided on the base.

Beneficial effect, the present disclosure provides a bionic micro-cantilever structure, a manufacturing method thereof, and a piezoresistive sensor. The bionic micro-cantilever structure includes: a silicon substrate having a cantilever structure, and a silicon substrate disposed in the silicon substrate Bionic hole slit group, and beam varistor, substrate varistor and electrode lead provided on the upper surface of the silicon substrate; the bionic slit is bionic based on a scorpion slit susceptor; the beam is pressure sensitive A Wheatstone bridge is formed between the resistor and the substrate varistor through electrode leads. The present disclosure is based on the mechanism of stress amplification of seam receptors in the tarsal joint of Peter Scorpion, and at the same time, a micro-cantilever structure with ultra-sensitive micro-information (force, displacement, vibration, acceleration) is designed using micro-nano manufacturing technology. The micro-cantilever structure provided by the present disclosure has the characteristics of high sensitivity, high detection accuracy, and ease of mass production.

BRIEF DESCRIPTION

1 is a perspective view of the bionic micro-cantilever beam structure provided by the present disclosure;

2 is a structural diagram of a Wheatstone circuit formed by connecting a substrate varistor and a beam varistor on the beam in the bionic micro-cantilever structure provided by the present disclosure;

Figure 3 is a circuit diagram of Wheatstone circuit;

4 is a distribution diagram of the pore group of the susceptor at the tarsal joint of Peter scorpion observed by electron microscope;

Figure 5 is the shape of the tip of a single hole in the seam receptor of the tarsal joint of Peter scorpion observed by electron microscope;

Figure 6 is a schematic diagram of the deformation of the cantilever beam;

7 is a diagram of the finite element analysis software ABAQUS for the analysis results of the stress of the cantilever beam and the cantilever beam without the gap structure in the present disclosure;

FIG. 8 is a flowchart of steps of a method for manufacturing the bionic micro-cantilever structure provided by the present disclosure.

detailed description

In order to make the purpose, technical solutions and advantages of the disclosure more clear and unambiguous, the disclosure will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present disclosure and are not intended to limit the present disclosure.

Example 1

The first embodiment provided by the present disclosure is a bionic micro-cantilever structure 1, as shown in FIG. 1, comprising: a silicon substrate 2 in a cantilever structure, and two bionic holes provided in the silicon substrate 2 Slit group 3, and the varistor 4, beam varistor 5 and electrode lead 6 provided on the upper surface of the silicon substrate 2;

Each bionic slit 7 in the bionic hole group 3 is arranged to penetrate the silicon substrate 2, and the two bionic hole groups 3 are arranged symmetrically on the left and right sides of the central axis of the silicon substrate; The bionic hole slit group 3 includes: at least one bionic slit 7; each bionic slit 7 is parallel to each other;

The bionic seam 7 is bionic based on a scorpion seam receptor;

A Wheatstone bridge is formed between the varistor 4 on the beam and the varistor 5 of the substrate through electrode leads 6.

Specifically, as shown in FIG. 1, the bionic micro-cantilever structure provided by the present disclosure uses silicon material as a substrate, designs the silicon wafer as a cantilever structure, and lays out on the upper surface of the silicon substrate of the cantilever structure respectively Bionic hole group and Wheatstone bridge composed of four equivalent varistor.

The connection method of the Wheatstone bridge is shown in Figure 2, and the circuit principle of the Wheatstone bridge is shown in Figure 3. Among them Vd is the input voltage, V1 and V2 are the voltage output terminal. The varistor on the two beams are R1 and R2, and the varistor under the two beams are R3 and R4; one end of R1 is connected to Vd, one end of R4 is connected to Vd, that is, one end of R4 connected to Vd is connected in series with R1; The other end is connected in series with one end of R3, and one end drawn from the connection of R1 and R3 is the output end of voltage V1; the other end of R4 is connected in series with one end of R2, and one end is drawn from the connection of R4 and R2 is voltage V2 The output end of R2; the other end of R2 is grounded, the other end of R3 is grounded, that is, the other end of R2 is connected in series with the other end of R3.

Because the manufacturing process and parameters of the four pressure-sensitive elements are exactly the same, the resistance values of the four pressure-sensitive elements are all the same. When the beam is not deformed, the resistance values of the four resistors in the Wheatstone bridge are the same. At this time, the output terminal V1 There is no voltage output from V2. When the beam is deformed by the force, the resistance of the two pressure-sensitive elements on the beam changes, resulting in a change in the voltage between the output terminals V1 and V2. Through the difference between the output voltages of the two output terminals, the beam deformation can be converted to The voltage signal in turn reflects the stress of the cantilever. The output of the Wheatstone bridge meets the following relationship:

Where V _d is the input voltage, and the output voltage V _OUT satisfies the following relationship:

When the cantilever beam is not deformed, the four resistance values are equal to R, and the output voltage V _OUT is 0 at this time. When the cantilever beam is deformed, the resistance value of the varistor on the beam changes. If the change amount of the varistor on the beam is equal and the resistance value is R+ΔR, then the output voltage V _OUT is:

Further, each bionic hole slit group contains at least one bionic slit 7, and each bionic slit 7 is arranged in parallel. Preferably, each bionic hole seam group contains 2-10 bionic seams, the spacing between the bionic seams 7 is 10-100 microns, the spacing between the bionic seams 7 can also be set to be equal, or between the bionic seams 7 can be set The spacing is not the same. The length and the aspect ratio of each bionic seam may be set to be the same or different.

The bionic seam 7 is bionic based on the scorpion seam receptor; combined with the distribution map of the hole group of the seam receptor of the Peter scorpion tarsal joint observed with the electron microscope shown in FIGS. 4 and 5 and Peter observed with the electron microscope The shape of the tip of a single hole in the seam receptor of the scorpion tarsal joint. In this disclosure, the tips of both sides of the bionic seam 7 are designed to be semicircular according to the shape characteristics of the bionic seam in the scorpion seam receptor, as shown in FIG. 4 When the micro-cantilever beam is deformed by force, the tip of the semi-circular bionic joint can reduce the stress concentration phenomenon at the edge of the bionic joint and reduce the influence of the addition of the hole group on the rigidity of the micro-cantilever beam, so as to achieve a good detection effect. While reducing the impact on bandwidth.

Specifically, the bionic hole group is symmetrically arranged on the left and right sides of the central axis of the silicon substrate, and the varistor on the two beams is U-shaped and respectively surrounds the two bionic hole groups. When the cantilever beam is deformed by force, due to the existence of the bionic hole group on the beam, the stress concentration phenomenon occurs in the area near the bionic hole group, resulting in a large varistor resistance around the bionic hole group, which makes the beam A voltage signal is generated at the output end of the Wheatstone bridge formed by the varistor and the substrate varistor, and the voltage signal can reflect the stress condition of the cantilever beam. The present disclosure imitates the bionic seam structure of the seam susceptor at the tarsal joint of Peter Scorpion. Photolithography of the seam structure on the micro-cantilever beam can effectively improve the detection sensitivity of the cantilever beam while ensuring a higher bandwidth.

In order to obtain a better detection effect, the silicon substrate with a cantilever beam structure is designed as a T-shaped structure; the substrate varistor and electrode leads are laid out on the surface of the silicon substrate at the upper end of the T-shaped structure, The varistor on the beam and the bionic hole group are both laid out on the surface of the silicon substrate at the lower end of the T-shaped structure.

The length of the micro-cantilever beam disclosed in the present disclosure is 100-500 microns, the width is 50-500 microns, and the thickness is 10-100 microns. Two bionic hole groups are etched on the micro-cantilever beam. Each bionic hole in the bionic hole group penetrates the silicon substrate. The bionic hole group is used as the stress concentration area. The two bionic hole groups are beams on the cantilever beam. The central axis is arranged symmetrically left and right, the distance between the two bionic slot groups is 10-200 microns, the bionic slot near the substrate is 5-200 microns from the fixed end, the length of the bionic slot is 10-200 microns, and the aspect ratio of the bionic slot is 4 ~20, the distance between the bionic seams is 5-100 microns, and the tips of each side of each bionic seam are semicircular. The varistor on the two beams is U-shaped and surrounds the bionic slot group on the two beams respectively. The substrate varistor has the same specifications as the varistor on the beam. The width of the varistor area is 5-50 microns and the thickness It is 2-20 microns, the varistor is 5-100 microns from the bionic hole group, and the substrate varistor is 100-500 microns from the varistor on the beam. The four resistors are connected with electrode leads to form a Wheatstone bridge.

Preferably, as shown in FIG. 1, the length of the micro-cantilever structure is 450 μm, the width is 200 μm, and the thickness is 50 μm. The distance between the two bionic hole groups is 60 μm, which is close to the fixed end. 10 micrometers from the fixed end; each hole group 3 contains three bionic seams 7, each bionic seam 7 is 40 micrometers long and 10 micrometers wide, and the spacing of each bionic seam 7 is the same, 10 micrometers. The width of the varistor is 10 microns, and the lateral distance between the two varistor is 20 microns. The distance between the varistor on the beam and the substrate varistor is 150 microns.

The working process and principle of the micro-cantilever structure provided by the present disclosure:

As shown in Figure 6, when the free end of the cantilever beam is subjected to a force F, the free end of the cantilever beam produces a deformation d, and the relationship between the force F of the cantilever beam and the deformation d satisfies Hooke's law:

F = Kd (5)

Where K is the normal elastic coefficient of the cantilever beam. The size of K value is related to the size specification of the cantilever beam. In this disclosure, due to the existence of two bionic slot groups, the normal elastic coefficient of the cantilever beam is reduced, so under the same external force, the deformation amount generated at the free end of the cantilever beam increases, resulting in the cantilever beam The amount of change in the resistance value of the varistor increases, thereby improving the perceptual sensitivity of the present disclosure. The varistor on the beam and the substrate varistor convert the displacement of the cantilever beam into a voltage signal through a Wheatstone bridge to output.

The micro-cantilever structure disclosed in the present disclosure is designed by designing a silicon substrate as a cantilever beam structure, and etching two bionic hole groups on the micro-cantilever, each bionic slot in the bionic hole group penetrates the silicon substrate, The bionic hole group is used as the stress concentration area. Due to the stress concentration effect of the bionic hole group, the area near the bionic hole group is more sensitive to stress changes, which leads to a more drastic change in the resistance value of the varistor near the bionic hole group with the change of stress, in order to improve Sensitivity of detection; the tips of the two sides of the bionic seam are semi-circular according to the shape characteristics of the bionic hole seam group in the seam receptor of the Peter scorpion tarsal joint, which can reduce the concentration of stress on the edge of the hole seam and reduce the structure of the hole seam The effect of the addition of on the rigidity of the cantilever beam meets the requirements of the cantilever beam to improve the sensitivity while ensuring the bandwidth.

As shown in FIG. 7, it is the result of the stress analysis of the finite element analysis software ABAQUS on the micro-cantilever beam and the micro-cantilever beam without the slot structure described in this disclosure. The parameters of the analyzed cantilever beam with the slot structure are as follows The above dimensions and specifications, the length, width and thickness of the cantilever beam without the slot structure are the same as those of the cantilever beam with the slot, apply the same downward surface pressure on the free ends of the two cantilever beams, the other end of the two cantilever beams Set to fixed end. From the analysis results, it can be found that the cantilever beam described in the present disclosure generates stress concentration in the varistor setting area, and the stress value in the varistor area is about twice that of the cantilever beam without the slot structure. Therefore, setting the varistor element in the vicinity of the bionic hole group can effectively amplify the force information of the cantilever beam, so as to realize the detection of micro information (such as: force, displacement, vibration, acceleration).

Example 2

The second embodiment provided by the present disclosure is a method for manufacturing a bionic micro-cantilever structure, as shown in FIG. 8, including:

Step S81, a silicon wafer is used as a substrate, and a silicon dioxide insulating layer is oxidized on the surface of the silicon wafer;

Step S82: lithographically pattern the substrate varistor and beam varistor on the silicon wafer, and fabricate the substrate varistor and beam varistor on the substrate varistor pattern area;

Step S83: lithographically pattern the varistor lead, use a metal sputtering process to sputter a metal film, and form a lead between the substrate varistor and the beam varistor after etching and stripping;

Step S84, a bionic hole group penetrating through the silicon wafer is etched on the silicon wafer;

Step S85: Ion etching is performed from the back of the silicon wafer to release the cantilever beam structure.

In a specific application process, the manufacturing method includes the following steps:

The manufacturing process and flow of the micro-cantilever in this disclosure are as follows:

(1) A silicon wafer is used as the main material of the cantilever beam, and a silicon dioxide insulating layer of about 0.5 microns is oxidized on the surface of the silicon wafer.

(2) Apply photoresist on the silicon wafer to lithographically pattern the varistor, and use hydrofluoric acid to etch away the silicon dioxide in the varistor area.

(3) Using photoresist and silicon dioxide as masks, implant boron ions into the silicon wafer to make a varistor with a thickness of about 1.5 microns in the varistor area.

(4) The pattern of the varistor lead is lithographically formed, and a layer of metal thin film is sputtered by a metal sputtering process to form a lead between the varistor after photolithography, etching, and stripping.

(5) The mask pattern of the cantilever beam and the two bionic hole groups is photolithographically formed on the front surface of the silicon wafer, and the silicon oxide layer is dry etched until the underlying silicon of the silicon wafer is exposed to form a micro cantilever beam containing the bionic hole groups Graphics.

(6) Deep reactive ion etching of the silicon wafer is performed from the back of the silicon wafer to release the cantilever beam structure, and a micro cantilever beam is fabricated.

Example 3

The third embodiment provided by the present disclosure is a piezoresistive sensor, which includes: a base and the bionic micro-cantilever structure provided on the base.

It is conceivable that the bionic micro-cantilever structure provided by the present disclosure can be applied to a piezoresistive sensor for sensing a pressure signal, and can achieve better detection effects.

The bionic micro-cantilever structure and pressure sensor provided by the present disclosure can be used in biochemical composition analysis, acceleration detection and object surface state detection, etc., and can be applied in the fields of environmental detection, medical diagnosis, aerospace military and other fields.

The present disclosure provides a bionic micro-cantilever structure, a method for manufacturing the same, and a piezoresistive sensor. The micro-cantilever structure includes: a silicon substrate, a bionic hole group disposed in the silicon substrate, and a A beam varistor, a substrate varistor and an electrode lead on the upper surface of the silicon substrate; the bionic slit is bionic based on a scorpion slit susceptor; between the beam varistor and the substrate varistor The Wheatstone bridge is formed by electrode leads. The present disclosure is based on the mechanism of stress amplification of the seam receptor at the tarsal joint of Peter Scorpion, and at the same time, a micro-cantilever structure with ultra-sensitive micro-information is designed using micro-nano manufacturing technology. The micro-cantilever structure provided by the present disclosure has the characteristics of high sensitivity, high detection accuracy, and ease of mass production.

It can be understood that, for those of ordinary skill in the art, equivalent replacements or changes can be made according to the technical solutions and inventive concepts of the present disclosure, and all such changes or replacements should fall within the protection scope of the claims appended to the present disclosure.

Claims

A bionic micro-cantilever structure is characterized by comprising: a silicon substrate with a cantilever structure, two bionic hole groups provided in the silicon substrate, and a silicon substrate provided on the upper surface of the silicon substrate Varistor on the beam, substrate varistor and electrode lead;

The two bionic hole groups are arranged symmetrically on the left and right sides of the central axis of the silicon substrate; each bionic hole group includes: at least one bionic slot;

The bionic seam is bionic based on a scorpion seam receptor;

A Wheatstone bridge is formed between the varistor on the beam and the varistor on the substrate through electrode leads.
The bionic micro-cantilever structure according to claim 1, wherein each bionic slit in the bionic hole group is arranged to penetrate the silicon substrate.
The bionic micro-cantilever beam structure according to claim 1, wherein the varistor on the two beams is U-shaped and respectively surrounds the two bionic hole groups.
The bionic micro-cantilever structure according to claim 3, characterized in that the tips on both sides of each of the bionic seams are designed to be semi-circular according to the shape characteristics of the bionic seams in the scorpion seam receptor.
The bionic micro-cantilever structure according to claim 4, wherein the silicon substrate in the cantilever structure is a T-shaped structure; the substrate varistor and electrode leads are arranged on the upper end of the T-shaped structure On the surface of the silicon substrate, the varistor on the beam and the bionic hole group are both laid out on the surface of the silicon substrate at the lower end of the T-shaped structure.
The bionic micro-cantilever structure according to any one of claims 1-5, wherein the bionic seam is 10 to 200 microns long, the bionic seam has an aspect ratio of 4 to 20, and the distance between the bionic seams is 5 to 100 microns.
The bionic micro-cantilever structure according to any one of claims 1-5, wherein the width of the varistor region is 5-50 microns, and the thickness is 2-20 microns.
The bionic micro-cantilever beam structure according to any one of claims 1 to 5, characterized in that the varistor is 5 to 100 microns from the bionic hole group, and the substrate varistor is pressed against the beam The varistors are 100 to 500 microns apart.
The bionic micro-cantilever structure according to any one of claims 1-4, wherein the bionic slits are arranged parallel to each other.
The bionic micro-cantilever beam structure according to claim 9, wherein the length, aspect ratio and distance between the bionic slits are different.
The bionic micro-cantilever structure according to claim 9, characterized in that each of the bionic slits has the same length, aspect ratio and distance between the bionic slits.
A method for manufacturing a bionic micro-cantilever beam structure is characterized in that it includes:

Using silicon wafer as the substrate, a silicon dioxide insulating layer is oxidized on the surface of the silicon wafer;

Lithographically pattern the substrate varistor and beam varistor pattern on the silicon wafer, and fabricate the substrate varistor and beam varistor on the substrate varistor pattern area;

Photoetching the varistor lead pattern, using a metal sputtering process to sputter a layer of metal film, and forming a lead between the substrate varistor and the beam varistor after etching and stripping

Bionic hole group penetrating through the silicon wafer is etched on the silicon wafer;

Ion etching from the back of the silicon wafer releases the cantilever beam structure.
The method for manufacturing a bionic micro-cantilever structure according to claim 12, wherein the step of etching a bionic hole group penetrating through the silicon wafer on the silicon wafer includes:

A mask pattern of the cantilever beam and two bionic hole groups is formed by photolithography on the front surface of the silicon wafer, and the bionic hole groups are etched by dry method.
The method for manufacturing a bionic micro-cantilever structure according to claim 12, wherein the step of ion-etching from the back of the silicon wafer to release the cantilever structure includes:

The deep reactive ion etching of the silicon wafer is performed from the back of the silicon wafer to release the cantilever beam structure.
A piezoresistive sensor, characterized by comprising: a base and a bionic micro-cantilever structure according to any one of claims 1-11 disposed on the base.