WO2020137187A1 - 両頭研削方法 - Google Patents

両頭研削方法 Download PDF

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Publication number
WO2020137187A1
WO2020137187A1 PCT/JP2019/043882 JP2019043882W WO2020137187A1 WO 2020137187 A1 WO2020137187 A1 WO 2020137187A1 JP 2019043882 W JP2019043882 W JP 2019043882W WO 2020137187 A1 WO2020137187 A1 WO 2020137187A1
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WIPO (PCT)
Prior art keywords
grinding
ground
wafer
thickness
nanotopography
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PCT/JP2019/043882
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English (en)
French (fr)
Japanese (ja)
Inventor
好信 西村
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株式会社Sumco
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Application filed by 株式会社Sumco filed Critical 株式会社Sumco
Priority to CN201980086217.XA priority Critical patent/CN113396030B/zh
Priority to KR1020217018567A priority patent/KR102517771B1/ko
Priority to DE112019006452.5T priority patent/DE112019006452T5/de
Publication of WO2020137187A1 publication Critical patent/WO2020137187A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10—Single-purpose machines or devices
    • B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
    • B24B7/17—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/03—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent according to the final size of the previously ground workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Definitions

  • the present invention relates to a double-sided grinding method.
  • an object to be ground is ground by rotating the object to be ground and supplying a grinding liquid to both main surfaces of the object to be ground, and bringing a grinding wheel of a grinding wheel into contact with both main surfaces of the object to be ground.
  • a double-sided grinding method is known (for example, refer to Patent Document 1).
  • the method described in Patent Document 1 reduces the hydroplaning effect between the object to be ground and the grindstone by reducing the supply amount of the grinding fluid as the height of the grindstone decreases, and each grinding target The grinding condition of the object is kept constant.
  • An object of the present invention is to provide a double-sided grinding method which has good nanotopography and can obtain an object to be ground having a desired thickness.
  • the double-sided grinding method of the present invention by rotating the object to be ground and supplying the grinding liquid to both main surfaces of the object to be ground, by bringing the grindstone of the grinding wheel into contact with both main surfaces of the object to be ground Using a double-sided grinding device including a grinding means for grinding the object to be ground and a thickness measuring means for measuring the thickness of the object to be ground, based on the measurement result of the thickness measuring means, the object to be ground A double-sided grinding method for grinding until the thickness of an object reaches a predetermined thickness, wherein a predetermined amount of grinding liquid is supplied to both main surfaces of the first object to be ground.
  • a nanotopography measuring step of measuring the nanotopography of the first workpiece Based on a first grinding step of performing grinding until the thickness reaches the predetermined thickness, a nanotopography measuring step of measuring the nanotopography of the first workpiece, and a measurement result of the nanotopography measuring step.
  • a second grinding step in which the grinding conditions are adjusted so that the nanotopography of the second object to be ground approaches 0, and grinding is performed until the thickness of the second object to be ground reaches the predetermined thickness.
  • the second grinding process while maintaining the total supply amount of the grinding liquid in the first grinding process, the second grinding process supplies the grinding liquid to one main surface of the second object to be ground and the other grinding liquid to the other main surface.
  • the second object to be ground is ground by adjusting the ratio with the supply amount of the grinding liquid to the main surface.
  • the thickness measuring means includes a pair of contactors that respectively contact both main surfaces of the object to be ground, and outputs a signal according to the position of the pair of contactors. It is preferable to use a differential transformer type displacement gauge for measuring the thickness of the object to be ground.
  • the second grinding step is based on a measurement result of the nanotopography measuring step of the first object to be ground, and the first object to be ground in the second object to be ground. It is preferable to adjust the ratio so that the amount of the grinding liquid supplied to the main surface on the concave side of the object is larger than the amount of the grinding liquid supplied to the other main surface.
  • an object to be ground having good nanotopography and a desired thickness can be obtained.
  • 1 is a schematic view of a double-sided grinding machine according to a related technique and an embodiment of the present invention.
  • the block diagram of the control system of the said double-head grinding apparatus. 6 is a graph showing the result of Experiment 1 for guiding the present invention, showing the relationship between the supply amount of the grinding liquid to each of the first and second main surfaces and the nanotopography at the wafer center.
  • the graph which shows the relationship between the supply amount of the grinding liquid with respect to each of the 1st, 2nd main surface of the wafer obtained in the said experiment 1, and the thickness of a wafer center.
  • 6 is a graph showing the result of Experiment 2 for guiding the present invention and showing the relationship between the measured environmental temperature and the measured value of the differential transformer displacement meter.
  • 6 is a graph showing the result of Experiment 3 for guiding the present invention and showing the relationship between the supply ratio of the grinding liquid to each of the first and second main surfaces and the nanotopography at the wafer center.
  • FIG. 6 is a graph showing the result of Experiment 3 and showing the relationship between the supply ratio of the grinding liquid to each of the first and second main surfaces and the thickness of the wafer center.
  • FIG. The flowchart of the double-sided grinding method which concerns on the said one Embodiment.
  • the double-sided grinding machine 1 includes a grinding means 2, a differential transformer type displacement meter 3 as a thickness measuring means, a processing chamber 4, and a control means 5.
  • the grinding means 2 includes a carrier ring 21, a wafer rotating means 22, first and second grinding wheels 23 and 24, first and second wheel rotating means 25 and 26, and first and second wheels. It is provided with advancing/retreating means 27, 28 and a grinding fluid supply means 29.
  • the carrier ring 21 is formed in an annular shape and holds the wafer W therein.
  • the wafer rotating means 22 is controlled by the control means 5 and rotates the carrier ring 21 around the center of the wafer W.
  • the first and second grinding wheels 23, 24 are substantially disc-shaped wheel bases 23A, 24A, and a plurality of grindstones 23B, 24B provided at predetermined intervals along the outer edge of one surface of the wheel bases 23A, 24A. It has and. Grinding liquid supply holes 23C and 24C penetrating both sides of the wheel bases 23A and 24A are provided at the centers of the wheel bases 23A and 24A.
  • the first and second wheel rotating means 25 and 26 are controlled by the spindles 25A and 26A holding the first and second grinding wheels 23 and 24 respectively at their tips, and the control means 5 to move the spindles 25A and 26A, respectively. It is provided with rotation motors 25B and 26B for rotation.
  • the first wheel rotating means 25 is provided on the left side of the wafer W in FIG. 1, and the second wheel rotating means 26 is provided on the right side.
  • the first and second wheel advancing/retreating means 27, 28 are controlled by the control means 5 to advance/retreat the first and second wheel rotating means 25, 26 with respect to the wa
  • the grinding fluid supply means 29 is controlled by the control means 5 and is fed into the first and second grinding wheels 23 and 24 through the grinding fluid supply holes 23C and 24C of the first and second grinding wheels 23 and 24. , Supply grinding fluid.
  • the differential transformer type displacement meter 3 includes a pair of signal output means 31, arms 32 extending downward from each signal output means 31, and a contactor 33 provided at the tip of each arm 32.
  • the pair of contacts 33 are provided so as to contact the first and second main surfaces W1 and W2 of the wafer W, respectively, and move according to the thickness of the wafer W.
  • the signal output means 31 outputs a signal corresponding to the position of each contact 33 to the control means 5.
  • the processing chamber 4 is formed in a box shape in which at least the wafer W, the first and second grinding wheels 23 and 24, and the differential transformer type displacement meter 3 can be arranged inside. Are prevented from scattering outside the processing chamber 4.
  • the control means 5 is connected to a memory (not shown) and grinds the wafer W based on various conditions stored in the memory.
  • the first and second grinding wheels 23 and 24 are located at the positions shown by the solid lines in FIG. 1, and the contacts 33 of the differential transformer type displacement meter 3 are connected to the first and second main surfaces W1 of the wafer W. , W2, the control means 5 controls the wafer rotating means 22, the first and second wheel rotating means 25 and 26, the first and second wheel advancing and retracting means 27 and 28, and the grinding liquid supply means. 29, the first and second grinding wheels 23 and 24 are pressed against the first and second main surfaces W1 and W2 of the wafer W, respectively, as shown by the chain double-dashed line in FIG. The wafer W is ground by supplying a grinding liquid into the first and second grinding wheels 23 and 24 and rotating the carrier ring 21 and the first and second grinding wheels 23 and 24.
  • the control means 5 causes the wafer W and the second grinding wheel 24 to rotate in the clockwise direction (clockwise direction) as viewed from the left side of FIG. 23 is rotated counterclockwise (counterclockwise). Further, the control means 5 supplies the same amount of grinding liquid to the first main surface W1 and the second main surface W2.
  • the rotation directions of the first and second grinding wheels 23 and 24 are not limited to the above directions. Then, the control means 5 manages the thickness of the wafer W based on the signal output from the differential transformer type displacement meter 3, and when it judges that the wafer W has been ground to a predetermined thickness set in advance, the first, The second grinding wheels 23, 24 are separated from the wafer W to finish the grinding.
  • the present inventor has considered the cause of such a phenomenon, and determines the first and second grinding wheels 23, depending on the flow rate of the grinding fluid, a slight difference in the quality of the grindstones 23B, 24B, the state of the surface of the wafer W, and the like.
  • a difference occurs between the wear of 24 and the state of the cutting edge, and in the central portion of the wafer W, where the first and second grinding wheels 23, 24 are constantly in contact during grinding, a difference in front and back beveling allowance is particularly remarkable, and the central portion It was speculated that a dent or a convex habit would occur on the. Therefore, as a result of consideration, the present inventor considered that there is a possibility that the nanotopography of the wafer W could be improved by adjusting the supply amount of the grinding liquid, and conducted the following experiment.
  • a double-sided grinding machine 1 (Model: DXSG320 manufactured by Koyo Machine Industry Co., Ltd.) was prepared. Then, the double-sided grinding method of the related art is carried out while supplying the grinding liquid at 1.2 L/min to each of the first main surface W1 and the second main surface W2, and the wafer W having a diameter of 300 mm is predetermined. It was ground to a thickness (Experimental Example 1-1). Further, the supply amount of the grinding fluid to the first main surface W1 and the second main surface W2 is 1.5 L/min each (Experimental example 1-2) and 1.8 L/min each (Experimental example 1-3). 10 wafers W were ground under the same conditions as in Experimental Example 1 except that
  • Ten wafers W were ground by each of the grinding methods of Experimental Examples 1-1 to 1-3, and the first main surface W1 was measured by a nanotopography measuring instrument (Model: FT-300U manufactured by Mizojiri Optical Co., Ltd.). The nanotopography of was measured. The nanotopography at this time is to measure the profile of the unevenness of the surface shape of the first main surface W1 when the position of the outermost peripheral portion of the first main surface W1 is 0 nm. The nanotopography of the center of the surface W1 was measured, profile data of a cross section passing through the center of the wafer W was acquired, and the numerical value of the central portion of the wafer W in the profile was used as an evaluation index.
  • a nanotopography measuring instrument Model: FT-300U manufactured by Mizojiri Optical Co., Ltd.
  • the value of the outermost peripheral portion is used as a reference (0 nm).
  • the result is shown in FIG. In FIG. 4, when the value of nanotopography is less than 0, the center of the first main surface W1 is concave, and when it exceeds 0, the center is protruding. Further, the larger the absolute value of nanotopography, the larger the amount of depression and the amount of protrusion.
  • the nanotopography of the wafer W may be improved by adjusting the supply amount of the grinding liquid to the first main surface W1 and the second main surface W2.
  • Example 2 The present inventor has found from the results of Experiment 1 described above that the nanotopography of the wafer W may be improved by adjusting the supply amount of the grinding liquid.
  • Experimental Examples 1-1 and 1-3 When the thickness of the center of the wafer W was measured, as shown in FIG. 5, it was confirmed that Experimental Example 1-1 was thicker by about 1 ⁇ m than Experimental Example 1-3. Even if the nanotopography of the wafer W can be improved, it is not preferable that the thickness be different from the target value. Therefore, as a result of consideration by the present inventor, the temperature of the processing chamber 4 changes due to the adjustment of the supply amount of the grinding liquid, and a measurement error of the differential transformer type displacement meter 3 occurs due to this temperature change. The following experiment was conducted on the assumption that the thickness of the wafer W may be different from the target value.
  • a differential transformer type displacement meter 3 (manufactured by Tokyo Seimitsu Co., Ltd. model: PULCOM series) is prepared, and a temperature sensor (T&D company model: TR-52i is provided in the housing of the signal output means 31 of the differential transformer type displacement meter 3. ) was attached.
  • the contactor 33 was brought into contact with the wafer W having a predetermined thickness, and the thickness was measured while changing the measurement environment temperature.
  • the measurement result is shown in FIG. As shown in FIG. 6, it was confirmed that the measured value of the differential transformer type displacement meter 3 decreased as the environmental temperature increased.
  • the differential transformer type displacement meter 3 when used to perform grinding aiming at the same thickness, the higher the temperature in the processing chamber 4, the more the wafer W reaches the target value when the grinding is not proceeding. Since the measurement result that the wafer W has arrived is obtained, it can be estimated that the wafer W becomes thicker.
  • the double-sided grinding machine 1 in which the above-mentioned temperature sensor is attached to the signal output means 31 is prepared, the wafer W is ground under the condition that the supply amount of the grinding fluid is the same as that in the experimental example 1-1, and the processing chamber 4 under grinding is processed.
  • the temperature change was measured every second (Experimental example 2-1).
  • the wafer W was ground under the same conditions as in Experimental Example 2-1 except that the supply amount of the grinding liquid was the same as in Experimental Example 1-3, and the temperature change during grinding was measured (Experimental Example 2- 2).
  • Table 1 shows the average values of the measurement results. As shown in Table 1, the temperature of Experimental Example 2-2 was about 0.7° C.
  • Table 3 shows the average value of the measurement results of the temperature in the processing chamber 4. As shown in Table 3, the maximum temperature difference between Experimental Examples 3-1 to 3-3 is 0.1° C., and if the total supply amount of the grinding fluid is the same, the first and second main surfaces W1, It was confirmed that the temperature in the processing chamber 4 hardly changed even when the ratio of the supply amount to W2 was changed.
  • FIG. 7 shows the calculation result of the nanotopography of the center of the first main surface W1 when the position of the outermost peripheral portion of the first main surface W1 is 0 nm.
  • the ratio of the supply amount to the first and second main surfaces W1 and W2 is changed even while maintaining the total supply amount of the grinding fluid to the first and second main surfaces W1 and W2. Therefore, it was confirmed that the nanotopography can be adjusted.
  • the ratio so that the amount of the grinding liquid supplied to the first main surface W1 on the concave side is larger than the amount of the grinding liquid supplied to the other second main surface W2, It was confirmed that the topography can be brought close to 0 nm.
  • FIG. 8 shows the thickness of the center of the wafer W and its average value. As shown in FIG. 8, even if the ratio of the supply amount to the first and second main surfaces W1 and W2 is changed, the total supply amount of the grinding fluid to the first and second main surfaces W1 and W2 is the same. If so, it was confirmed that the thickness of the wafer W hardly changed.
  • a double-sided grinding method according to an embodiment of the present invention will be described.
  • a related-art double-sided grinding machine 1 a first wafer W t as a first object to be ground, and a second wafer W p as a second object to be ground are prepared.
  • the first wafer W t and the second wafer W p are substantially the same in material and shape, and are, for example, one silicon single crystal ingot or different silicon single crystal ingots manufactured under the same manufacturing conditions. It was cut out from each.
  • step S1 first grinding step.
  • the first wafer W t used in the first grinding step may be a dummy wafer for preliminary grinding or a product wafer of a previous lot.
  • the differential transformer type displacement meter 3 measures the thickness of the first wafer W t and outputs a signal corresponding to the measurement result to the control means 5.
  • Control unit 5 first the first wafer W t, while supplying a predetermined amount of the grinding fluid to the second major surface W1, W2, first the wafer on the basis of a signal from the differential transformer type displacement meter 3 When it is determined that the thickness of W t has been ground to the predetermined thickness, the grinding is finished.
  • the supply amount of the grinding liquid to the first and second main surfaces W1 and W2 in the first grinding process may be the same or different, but the total supply amount in the first grinding process. Is set to be the same as the total supply amount in the second grinding step described later.
  • step S2 nanotopography measuring step
  • step S3 second grinding step
  • the operator sets the grinding conditions such that the nanotopography of the second wafer W p approaches 0 based on the measurement result of the nanotopography measurement step.
  • the worker performs measurement on the first and second main surfaces W1 and W2 so that the central nanotopography of the second wafer W p approaches 0 based on the central topography of the wafer W.
  • the ratio of the amount of grinding liquid supplied to the first main surface W1 and the amount of grinding liquid supplied to the second main surface W2 is set while maintaining the total amount of grinding liquid supplied. For example, it is known that the higher the ratio of the supply amount to the first main surface W1 is, the smaller the depression amount of the first main surface W1 is, and the first main surface W1 of the first wafer W t .
  • the worker increases the ratio of the supply amount to the first main surface W1, and when the center of the first main surface W1 is protruded, the supply amount to the first main surface W1 is increased. Lower the ratio of.
  • the operator increases the ratio to the second main surface W2 to increase the center of the second main surface W2.
  • the ratio to the second main surface W2 is lowered. That is, the ratio of the supply amount with respect to the main surface having a depressed center may be increased.
  • the supply ratio of the grinding fluid is preferably 200% or less as a value obtained by dividing the supply amount of the higher ratio by the supply amount of the lower ratio, for example, the supply amount of the higher ratio is 2 L/min.
  • the lower supply amount is preferably 1 L/min.
  • control means 5 sets the second wafer W p under the same grinding conditions as in the preliminary grinding process except for the supply ratio of the grinding liquid to the first and second main surfaces W1 and W2 based on the setting of the operator. Grinding.
  • the temperatures in the processing chamber 4 in the first grinding process and the second grinding process can be made substantially the same. Therefore, even if the differential transformer type displacement meter 3 in which a measurement error occurs due to the environmental temperature is used, the thickness of the wafer W is made substantially the same as the target value in both the first grinding process and the second grinding process. can do. Since the measurement accuracy of the differential transformer type displacement meter 3 is high, the second wafer W p whose thickness is adjusted with higher accuracy can be obtained.
  • the object to be ground may be a wafer other than silicon, or a disk-shaped object other than the wafer W such as ceramics or stone.
  • the second grinding process is performed based on the setting of the operator, it may be performed as follows. First, in the memory, in a state where the total supply amount of the grinding liquid to the first and second main surfaces W1 and W2 is maintained at a predetermined amount, the supply amount of the grinding liquid to the first main surface W1 and the second main surface Supply ratio adjustment information indicating how the nanotopography changes when the ratio of the supply amount of the grinding fluid to W2 is adjusted is stored. For example, as in the result obtained in Experiment 3, the supply ratio adjustment information is stored such that the higher the ratio of the supply amount to the first main surface W1 is, the smaller the recess amount of the first main surface W1 is. deep.
  • the supply ratio adjustment information may be created based on an experiment result using the double-sided grinding machine 1 or may be created by simulation. Then, the control unit 5 may adjust the ratio of the supply amount such that the nanotopography of the second wafer W p approaches 0 based on the nanotopography of the first wafer W t and the supply ratio adjustment information. ..
  • SYMBOLS 1 Double-sided grinding device, 2... Grinding means, 3... Differential transformer type displacement gauge (thickness measuring means), 23, 24... 1st and 2nd grinding wheel, 23B, 24B... Grinding stone, 33... Contact, W ... wafer (object to be ground), W t ... first wafer (first object to be ground), W p ... first wafer (second object to be ground), W1 ... first main surface (on the other hand Main surface), W2... second main surface (other main surface).

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
PCT/JP2019/043882 2018-12-27 2019-11-08 両頭研削方法 WO2020137187A1 (ja)

Priority Applications (3)

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CN201980086217.XA CN113396030B (zh) 2018-12-27 2019-11-08 两头磨削方法
KR1020217018567A KR102517771B1 (ko) 2018-12-27 2019-11-08 양두 연삭 방법
DE112019006452.5T DE112019006452T5 (de) 2018-12-27 2019-11-08 Doppel-schleifverfahren

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JP2018-245302 2018-12-27
JP2018245302A JP7159861B2 (ja) 2018-12-27 2018-12-27 両頭研削方法

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KR (1) KR102517771B1 (ko)
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DE (1) DE112019006452T5 (ko)
TW (1) TWI702115B (ko)
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WO2017061486A1 (ja) * 2015-10-09 2017-04-13 株式会社Sumco キャリアリング、研削装置および研削方法

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