WO2020135077A1 - Micro light-emitting diode display panel and display apparatus - Google Patents
Micro light-emitting diode display panel and display apparatus Download PDFInfo
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- WO2020135077A1 WO2020135077A1 PCT/CN2019/124885 CN2019124885W WO2020135077A1 WO 2020135077 A1 WO2020135077 A1 WO 2020135077A1 CN 2019124885 W CN2019124885 W CN 2019124885W WO 2020135077 A1 WO2020135077 A1 WO 2020135077A1
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- emitting diode
- micro light
- light emitting
- photodiode
- display panel
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- 239000000758 substrate Substances 0.000 claims abstract description 70
- 239000010409 thin film Substances 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- OQNXPQOQCWVVHP-UHFFFAOYSA-N [Si].O=[Ge] Chemical compound [Si].O=[Ge] OQNXPQOQCWVVHP-UHFFFAOYSA-N 0.000 claims description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 24
- 239000000203 mixture Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000004313 glare Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004438 eyesight Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
Definitions
- the present application relates to the field of display technology, in particular to a micro light-emitting diode display panel and display device.
- Micro LED The display principle of Display (micro light emitting diode display) is to thin, miniaturize and array the LED structure design, and its size is only about 1 ⁇ 10 ⁇ m level; then the ⁇ LED (or ULED, micro light emitting diode) is batch type Transfer to the circuit substrate (including the lower electrode and transistor), the substrate can be a hard, soft transparent, opaque substrate; then use the physical deposition process to complete the protective layer and the upper electrode, you can package the upper substrate, complete a Micro-LED display with simple structure.
- the typical structure of a micro light-emitting diode is a PN junction diode, which is composed of a direct energy gap semiconductor material.
- the upper and lower electrodes apply a forward bias to the micro light-emitting diode, causing current to pass, electrons and holes
- the region (active region) recombines and emits a single colored light.
- Most existing micro LED displays only have a display function and a single function.
- the main purpose of the present application is to propose a micro light emitting diode display panel, which aims to make the micro light emitting diode display panel also have a scanning function.
- the micro-LED display panel proposed in this application includes: an upper substrate, a lower substrate, an upper electrode, a lower electrode, a first micro-LED, a second micro-LED, a third micro-LED and an image sensor array ;
- the upper substrate and the lower substrate are spaced apart in the first direction;
- the upper electrode is provided on the side of the upper substrate close to the lower substrate;
- the lower electrode is provided on the lower substrate Close to the side of the upper substrate;
- the first micro light emitting diode, the second micro light emitting diode and the third micro light emitting diode are all disposed between the upper electrode and the lower electrode, and the first micro light emitting
- the diode, the second micro light-emitting diode and the third micro light-emitting diode are arranged at intervals in the second direction;
- the image sensor array is arranged between the upper electrode and the lower electrode.
- the present application also proposes a display device including the micro light emitting diode display panel, the micro light emitting diode display panel including:
- An upper substrate and a lower substrate, the upper substrate and the lower substrate are spaced apart in the first direction; an upper electrode is provided on a side of the upper substrate close to the lower substrate; a lower electrode is provided on the lower A side of the substrate close to the upper substrate; a first micro-light emitting diode, a second micro-light emitting diode and a third micro-light emitting diode Between the upper electrode and the lower electrode; and, an image sensor array is provided between the upper electrode and the lower electrode, the first micro light emitting diode, the second micro light emitting diode, the third micro The light emitting diodes and the image sensor array are arranged at intervals in the second direction.
- the display panel proposed in this application is a micro light emitting diode display panel.
- the micro light emitting diode display panel uses a blue chip to excite red and green phosphors or quantum dots, through hundreds of LEDs (Light Emitting Diode (Light Emitting Diode), the backlight spectrum and the spectral distribution of dozens of color filters.
- a set of simulation models of the color gamut of the liquid crystal module were established, and through thousands of sets of experimental data optimization, a relatively good color filter was designed.
- Chip and high color gamut LED backlight spectrum Compared with the traditional LED display, the brightness, contrast, level of the screen, dark field details, accurate color reproduction and smoothness of the screen, and response speed have been greatly improved.
- the micro light-emitting diode display panel proposed in this application also has a scanning function.
- the micro LED display panel has an image sensor array, the image sensor array is disposed between the upper electrode and the lower electrode, and the first micro LED, the second micro LED and the third micro LED emit After the light is reflected by the surface of the object, it can be received by the image sensor array, so that the image scanning function can be realized.
- FIG. 1 is a schematic structural diagram of an embodiment of a micro-LED display panel of the present application.
- FIG. 2 is a schematic diagram of the structure of the image sensor array in FIG. 1.
- the present application proposes a micro light-emitting diode display panel, which has a scanning function in addition to a basic display function.
- the micro LED display panel includes: an upper substrate 10, a lower substrate 20, an upper electrode 30, a lower electrode 40, a first micro LED 50, and a second micro LED 60 and a third micro light emitting diode 70 and an image sensor array 80, wherein the upper substrate 10 and the lower substrate 20 are spaced apart in the first direction; the upper electrode 30 is disposed near the upper substrate 10 On the side of the lower substrate 20, the lower electrode 40 is provided on the side of the lower substrate 20 close to the upper substrate 10; the first micro LED 50, the second micro LED 60, and the third micro The light emitting diodes 70 are all provided between the upper electrode 30 and the lower electrode 40; the image sensor array 80 is provided between the upper electrode 30 and the lower electrode 40, and the first micro light emitting diode 50 , The second micro light emitting diode 60, the third micro light emitting diode 70 and the image sensor array 80 are spaced apart along the second direction.
- the second micro light emitting diode 60, the third micro light emitting diode 70 and the image sensor array 80
- the display panel proposed in this application is a micro light emitting diode display panel.
- the micro light emitting diode display panel uses a blue chip to excite red and green phosphors or quantum dots, and studies the spectral distribution of hundreds of LED backlight spectra and dozens of color filters .
- screen brightness, screen contrast, screen layering, dark field details, accurate color reproduction and screen smoothness, and response speed it has greatly improved compared with LED displays. Its image quality performance has surpassed OLED display panels in a number of subjective evaluation data.
- the micro light-emitting diode display panel proposed in this application also has a scanning function.
- the micro light-emitting diode display panel has an image sensor array 80 disposed between the upper electrode 30 and the lower electrode 40, the first micro-light emitting diode 50, the second micro-light emitting diode 60 and The light emitted by the third micro light emitting diode 70 can be received by the image sensor array 80 after being reflected by the surface of the object, so that the image scanning function can be realized.
- the image sensor array 80 can also be used to scan documents and the like.
- the upper substrate 10 is a color filter glass substrate
- the lower substrate 20 is an array glass substrate
- the upper electrode 30 is a pixel electrode
- the lower electrode 40 is a common electrode.
- the image sensor array 80 is a thin film transistor-photodiode two-dimensional sensor matrix.
- the thin film transistor-photodiode two-dimensional sensor matrix includes a thin film transistor 81 and a photodiode 82 connected to the thin film transistor 81.
- Thin film transistor-photodiode two-dimensional sensor matrix can be nearly 100% The light utilization rate of the light transfers light information. It has high sensitivity, high gray level and fast response image quality. It can sample and read out large-area and high-information image information without distortion, and can be transmitted to the computer. Perform data storage, analysis and various processing as required.
- the image sensor array 80 may also be a CCD image sensor (charge-coupled device, photosensitive coupling element) or CMOS image sensor (Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor).
- CCD image sensor charge-coupled device, photosensitive coupling element
- CMOS image sensor Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor
- the thin film transistor 81 is an amorphous silicon thin film transistor.
- the amorphous silicon thin film transistor has a high switching ratio (I on /I off ), and its switching ratio is as high as 10 7 -10 8 because of In this embodiment, an amorphous silicon thin-film transistor with a high switching ratio is used as a switching element.
- the thin-film transistor 81 can address the addressing ability with a duty ratio of almost 100%, which significantly improves the display screen or image sensor matched therewith. the quality of.
- the photodiode 82 includes a first photodiode 100 for sensing red light, and a first photodiode for sensing green light. Two photodiodes 200 and a third photodiode 300 for sensing blue light.
- the first photodiode 100, the second photodiode 200, and the third photodiode 300 are all PIN-type photodiodes 82.
- the PIN photodiode 82 has the advantages of small junction capacitance, short transit time, and high sensitivity.
- the design of the present application is not limited to this.
- the first photodiode 100, the second photodiode 200, and the third photodiode 300 may also be PN-type semiconductors.
- the thin film transistor 81 and the photodiode 82 are coupled in series.
- the thin film transistor has a gate 81a, a source 81b, and a drain 81c.
- the drain 81c of the thin film transistor 81 is connected to the lower electrode 40, and the N region of the photodiode 82 is connected to the upper electrode 30.
- the first solution is that a color resist layer (not shown) is provided on the photodiode 82.
- a first color resist layer is provided on the first photodiode 100, and the first color resist layer is a red color resist Layer;
- a second color resist layer is provided on the second photodiode 200, the second color resist layer is a green color resist layer;
- a third color resist layer is provided on the third photodiode 300, the third color resist layer It is a blue color resist layer. In this way, it is possible to provide R( Red), G (green), and B (blue) color filters to output R, G, and B signals.
- the second solution is that the PIN-type photodiode 82 includes an N-type semiconductor, a P-type semiconductor, and an N-type semiconductor and a P-type semiconductor interposed therebetween
- the intrinsic layer is made of photosensitive material, wherein the intrinsic layer of the first photodiode 100 is used to sense red light, and the intrinsic layer of the second photodiode 200 is used to To sense green light, the intrinsic layer of the third photodiode 300 is used to sense blue light. Since the intrinsic layer is made of a photosensitive material, the photosensitive material can sense the light of the corresponding color, so the color film manufacturing process is not required, which can simplify the production process of the micro light-emitting diode display panel.
- the micro LED display panel further includes an anti-glare film 90, and the anti-glare film 90 is provided at The upper substrate 10 faces away from the upper surface of the upper electrode 30.
- the glare phenomenon refers to that the surface of the screen reflects the received light, thereby causing different degrees of negative effects on the brightness and contrast of the image.
- low-brightness display screens such as LCD monitors, when used in high-brightness light, will face the problem that the image is difficult to recognize, so it will cause harm to the user's eyes.
- the anti-glare film 90 can be effective To solve the above problems, it is possible to avoid the glare phenomenon from damaging the user's eyesight.
- the present application also proposes a display device (not shown).
- the display device includes the micro light-emitting diode display panel.
- the specific structure of the micro-light emitting diode display panel refers to the above embodiments. Since the display device proposed in this application uses the above All the technical solutions of all the embodiments therefore have at least all the advantages brought by the technical solutions of the above embodiments, which will not be repeated here.
- the display device may be, but not limited to, a television, a display, or the like.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electromagnetism (AREA)
Abstract
Disclosed are a micro light-emitting diode display panel and a display apparatus. The micro light-emitting diode display panel comprises: an upper substrate, a lower substrate, an upper electrode, a lower electrode, and a first micro light-emitting diode, a second micro light-emitting diode and a third micro light-emitting diode, that are arranged between the upper electrode and the lower electrode and are arranged in an array at intervals in a second direction, and an image sensor array, wherein the upper substrate and the lower substrate are spaced from each other in a first direction; the upper electrode is arranged on one side, close to the lower substrate, of the upper substrate; and the lower electrode is arranged on one side, close to the upper substrate, of the lower substrate.
Description
相关申请Related application
本申请要求2018年12月26日申请的，申请号为201811606193.X，名称为“微发光二极管显示面板和显示装置”的中国专利申请的优先权，在此将其全文引入作为参考This application requires the priority of the Chinese patent application with the application number 201811606193.X and the name "Micro LED Display Panel and Display Device", which was applied on December 26, 2018, and the full text of which is hereby incorporated by reference
技术领域Technical field
本申请涉及显示技术领域，特别涉及一种微发光二极管显示面板和显示装置。The present application relates to the field of display technology, in particular to a micro light-emitting diode display panel and display device.
背景技术Background technique
这里的陈述仅提供与本申请有关的背景信息，而不必然地构成现有的技术。Micro LED
Display（微发光二极管显示器）的显示原理，系将LED结构设计进行薄膜化、微小化、阵列化，其尺寸仅在1~10μm等级左右；后将μLED（或称ULED，微发光二极管）批量式转移至电路基板上（含下电极与晶体管），其基板可为硬性、软性之透明、不透明基板上；再利用物理沉积制程完成保护层与上电极，即可进行上基板的封装，完成一结构简单的微发光二极管显示器。The statements here only provide background information related to the present application and do not necessarily constitute existing technology. Micro LED
The display principle of Display (micro light emitting diode display) is to thin, miniaturize and array the LED structure design, and its size is only about 1~10μm level; then the μLED (or ULED, micro light emitting diode) is batch type Transfer to the circuit substrate (including the lower electrode and transistor), the substrate can be a hard, soft transparent, opaque substrate; then use the physical deposition process to complete the protective layer and the upper electrode, you can package the upper substrate, complete a Micro-LED display with simple structure.
微发光二极管的典型结构是一PN接面二极管，由直接能隙半导体材料构成。当上下电极施加一顺向偏压于微发光二极管，致使电流通过时，电子、电洞对于Active
region（主动区）复合，而发射出单一色光。现有的微发光二极管显示器大多仅具有显示功能，功能单一。The typical structure of a micro light-emitting diode is a PN junction diode, which is composed of a direct energy gap semiconductor material. When the upper and lower electrodes apply a forward bias to the micro light-emitting diode, causing current to pass, electrons and holes
The region (active region) recombines and emits a single colored light. Most existing micro LED displays only have a display function and a single function.
发明内容Summary of the invention
本申请的主要目的是提出一种微发光二极管显示面板，旨在使得该微发光二极管显示面板还具备扫描功能。The main purpose of the present application is to propose a micro light emitting diode display panel, which aims to make the micro light emitting diode display panel also have a scanning function.
为实现上述目的，本申请提出的微发光二极管显示面板，包括：上基板、下基板、上电极、下电极、第一微发光二极管、第二微发光二极管、第三微发光二极管和图像传感器阵列，；所述上基板和所述下基板在第一方向上间隔设置；所述上电极设于所述上基板的靠近所述下基板的一侧；所述下电极设于所述下基板的靠近所述上基板的一侧；所述第一微发光二极管、第二微发光二极管和第三微发光二极管均设于所述上电极和所述下电极之间，且所述第一微发光二极管、第二微发光二极管和第三微发光二极管沿第二方向间隔排布；所述图像传感器阵列设于所述上电极和所述下电极之间。In order to achieve the above object, the micro-LED display panel proposed in this application includes: an upper substrate, a lower substrate, an upper electrode, a lower electrode, a first micro-LED, a second micro-LED, a third micro-LED and an image sensor array ; The upper substrate and the lower substrate are spaced apart in the first direction; the upper electrode is provided on the side of the upper substrate close to the lower substrate; the lower electrode is provided on the lower substrate Close to the side of the upper substrate; the first micro light emitting diode, the second micro light emitting diode and the third micro light emitting diode are all disposed between the upper electrode and the lower electrode, and the first micro light emitting The diode, the second micro light-emitting diode and the third micro light-emitting diode are arranged at intervals in the second direction; the image sensor array is arranged between the upper electrode and the lower electrode.
本申请还提出一种显示装置，所述显示装置包括所述微发光二极管显示面板，所述微发光二极管显示面板包括：The present application also proposes a display device including the micro light emitting diode display panel, the micro light emitting diode display panel including:
上基板和下基板，所述上基板和所述下基板在第一方向上间隔设置；上电极，设于所述上基板的靠近所述下基板的一侧；下电极，设于所述下基板的靠近所述上基板的一侧；第一微发光二极管、第二微发光二极管和第三微发光二极管，所述第一微发光二极管、第二微发光二极管和第三微发光二极管均设于所述上电极和所述下电极之间；以及，图像传感器阵列，设于所述上电极和所述下电极之间，所述第一微发光二极管、第二微发光二极管、第三微发光二极管以及所述图像传感器阵列沿第二方向间隔排布。An upper substrate and a lower substrate, the upper substrate and the lower substrate are spaced apart in the first direction; an upper electrode is provided on a side of the upper substrate close to the lower substrate; a lower electrode is provided on the lower A side of the substrate close to the upper substrate; a first micro-light emitting diode, a second micro-light emitting diode and a third micro-light emitting diode Between the upper electrode and the lower electrode; and, an image sensor array is provided between the upper electrode and the lower electrode, the first micro light emitting diode, the second micro light emitting diode, the third micro The light emitting diodes and the image sensor array are arranged at intervals in the second direction.
本申请提出的显示面板为微发光二极管显示面板，微发光二极管显示面板采用蓝光芯片激发红色和绿色荧光粉或量子点，通过数百种LED（Light
Emitting
Diode，发光二极管）背光光谱和数十种彩色滤光片的光谱分布研究，建立起一套液晶模组色域的仿真模型，并通过数千组实验数据优化，设计出相对不错的彩色滤光片和高色域LED背光光谱。在画面亮度、画面对比度、画面层次感、暗场细节、色彩精准还原和画面流畅度以及响应速度方面较传统LED显示具有大幅提升，其画质表现在多项主观评测数据已全面超越OLED（Organic
Light-Emitting
Diode，有机发光二极管）显示面板。更重要的是，本申请提出的微发光二极管显示面板除了具备优异的显示性能外，还具有扫描功能。具体地，微发光二极管显示面板具有图像传感器阵列，所述图像传感器阵列设于所述上电极和所述下电极之间，第一微发光二极管、第二微发光二极管和第三微发光二极管射出的光线经物体表面反射后，能够被图像传感器阵列所接收，如此，能够实现图像扫描功能。The display panel proposed in this application is a micro light emitting diode display panel. The micro light emitting diode display panel uses a blue chip to excite red and green phosphors or quantum dots, through hundreds of LEDs (Light
Emitting
Diode (Light Emitting Diode), the backlight spectrum and the spectral distribution of dozens of color filters. A set of simulation models of the color gamut of the liquid crystal module were established, and through thousands of sets of experimental data optimization, a relatively good color filter was designed. Chip and high color gamut LED backlight spectrum. Compared with the traditional LED display, the brightness, contrast, level of the screen, dark field details, accurate color reproduction and smoothness of the screen, and response speed have been greatly improved. Its image quality has exceeded the OLED (Organic) in a number of subjective evaluation data.
Light-Emitting
Diode, organic light-emitting diode) display panel. More importantly, in addition to the excellent display performance, the micro light-emitting diode display panel proposed in this application also has a scanning function. Specifically, the micro LED display panel has an image sensor array, the image sensor array is disposed between the upper electrode and the lower electrode, and the first micro LED, the second micro LED and the third micro LED emit After the light is reflected by the surface of the object, it can be received by the image sensor array, so that the image scanning function can be realized.
附图说明BRIEF DESCRIPTION
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例
描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图示出的结构获得其他的附图。In order to more clearly explain the technical solutions in the embodiments of the present application, the embodiments will be described below
The drawings required in the description are briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without paying any creative labor, Other drawings can be obtained based on the structures shown in these drawings.
图1为本申请微发光二极管显示面板一实施例的结构示意图；1 is a schematic structural diagram of an embodiment of a micro-LED display panel of the present application;
图2为图1中图像传感器阵列的结构示意图。FIG. 2 is a schematic diagram of the structure of the image sensor array in FIG. 1.
本申请目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。The implementation, functional characteristics and advantages of the present application will be further described in conjunction with the embodiments and with reference to the drawings.
具体实施方式detailed description
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请的一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative work fall within the protection scope of the present application.
需要说明，若本申请实施例中有涉及方向性指示（诸如上、下、左、右、前、后……），则该方向性指示仅用于解释在某一特定姿态（如附图所示）下各部件之间的相对位置关系、运动情况等，如果该特定姿态发生改变时，则该方向性指示也相应地随之改变。It should be noted that if there are directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present application, the directional indication is only used to explain a specific posture (as shown in the drawings If the specific posture changes, the directional indicator will change accordingly.
另外，若本申请实施例中有涉及“第一”、“第二”等的描述，则该“第一”、“第二”等的描述仅用于描述目的，而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。另外，各个实施例之间的技术方案可以相互结合，但是必须是以本领域普通技术人员能够实现为基础，当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在，也不在本申请要求的保护范围之内。In addition, if there are descriptions related to "first", "second", etc. in the embodiments of the present application, the descriptions of "first", "second", etc. are for descriptive purposes only, and cannot be understood as instructions or hints Its relative importance or implicitly indicates the number of technical features indicated. Thus, the features defined as "first" and "second" may include at least one of the features explicitly or implicitly. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary skilled in the art to achieve, when the combination of technical solutions contradicts each other or cannot be achieved, it should be considered that the combination of such technical solutions does not exist , Nor within the scope of protection required by this application.
本申请提出一种微发光二极管显示面板，该微发光二极管显示面板除了具备基本的显示功能外还具备扫描功能。The present application proposes a micro light-emitting diode display panel, which has a scanning function in addition to a basic display function.
在本申请一实施例中，如图1所示，该微发光二极管显示面板包括：上基板10、下基板20、上电极30、下电极40，第一微发光二极管50、第二微发光二极管60和第三微发光二极管70和图像传感器阵列80，其中，所述上基板10和所述下基板20在第一方向上间隔设置；所述上电极30设于所述上基板10的靠近所述下基板20的一侧，所述下电极40设于所述下基板20的靠近所述上基板10的一侧；所述第一微发光二极管50、第二微发光二极管60和第三微发光二极管70均设于所述上电极30和所述下电极40之间；所述图像传感器阵列80设于所述上电极30和所述下电极40之间，所述第一微发光二极管50、第二微发光二极管60、第三微发光二极管70和所述图像传感器阵列80沿第二方向间隔排布。
In an embodiment of the present application, as shown in FIG. 1, the micro LED display panel includes: an upper substrate 10, a lower substrate 20, an upper electrode 30, a lower electrode 40, a first micro LED 50, and a second micro LED 60 and a third micro light emitting diode 70 and an image sensor array 80, wherein the upper substrate 10 and the lower substrate 20 are spaced apart in the first direction; the upper electrode 30 is disposed near the upper substrate 10 On the side of the lower substrate 20, the lower electrode 40 is provided on the side of the lower substrate 20 close to the upper substrate 10; the first micro LED 50, the second micro LED 60, and the third micro The light emitting diodes 70 are all provided between the upper electrode 30 and the lower electrode 40; the image sensor array 80 is provided between the upper electrode 30 and the lower electrode 40, and the first micro light emitting diode 50 , The second micro light emitting diode 60, the third micro light emitting diode 70 and the image sensor array 80 are spaced apart along the second direction.
The
本申请提出的显示面板为微发光二极管显示面板，微发光二极管显示面板采用蓝光芯片激发红色和绿色荧光粉或量子点，通过数百种LED背光光谱和数十种彩色滤光片的光谱分布研究，建立起一套液晶模组色域的仿真模型，并通过数千组实验数据优化，设计出相对不错的彩色滤光片和高色域LED背光光谱。在画面亮度、画面对比度、画面层次感、暗场细节、色彩精准还原和画面流畅度以及响应速度方面较LED显示具有大幅提升，其画质表现在多项主观评测数据已全面超越OLED显示面板。The display panel proposed in this application is a micro light emitting diode display panel. The micro light emitting diode display panel uses a blue chip to excite red and green phosphors or quantum dots, and studies the spectral distribution of hundreds of LED backlight spectra and dozens of color filters , Established a set of simulation models of the color gamut of the liquid crystal module, and optimized through thousands of experimental data, designed a relatively good color filter and high color gamut LED backlight spectrum. In terms of screen brightness, screen contrast, screen layering, dark field details, accurate color reproduction and screen smoothness, and response speed, it has greatly improved compared with LED displays. Its image quality performance has surpassed OLED display panels in a number of subjective evaluation data.
更重要的是，本申请提出的微发光二极管显示面板除了具备优异的显示性能外，还具有扫描功能。具体地，微发光二极管显示面板具有图像传感器阵列80，所述图像传感器阵列80设于所述上电极30和所述下电极40之间，第一微发光二极管50、第二微发光二极管60和第三微发光二极管70射出的光线经物体表面反射后，能够被图像传感器阵列80所接收，如此，能够实现图像扫描功能。More importantly, in addition to the excellent display performance, the micro light-emitting diode display panel proposed in this application also has a scanning function. Specifically, the micro light-emitting diode display panel has an image sensor array 80 disposed between the upper electrode 30 and the lower electrode 40, the first micro-light emitting diode 50, the second micro-light emitting diode 60 and The light emitted by the third micro light emitting diode 70 can be received by the image sensor array 80 after being reflected by the surface of the object, so that the image scanning function can be realized.
具体地，以指纹解锁为例，当手指按压在显示屏上时，第一微发光二极管50、第二微发光二极管60和第三微发光二极管70射出的光线经手指反射后经图像传感器阵列80所接收，当图像传感器阵列80接收到的图像与预设的图像一致时，即可实现指纹解锁。在其他实施例中，图像传感器阵列80还可以用于扫描文档等。Specifically, taking fingerprint unlocking as an example, when a finger is pressed on the display screen, the light emitted by the first micro-light emitting diode 50, the second micro-light emitting diode 60, and the third micro-light emitting diode 70 is reflected by the finger and then passes through the image sensor array 80 As received, when the image received by the image sensor array 80 is consistent with the preset image, the fingerprint can be unlocked. In other embodiments, the image sensor array 80 can also be used to scan documents and the like.
在此需要说明的是，所述上基板10为彩膜玻璃基板，所述下基板20为阵列玻璃基板，所述上电极30为像素电极，所述下电极40为公共电极。It should be noted here that the upper substrate 10 is a color filter glass substrate, the lower substrate 20 is an array glass substrate, the upper electrode 30 is a pixel electrode, and the lower electrode 40 is a common electrode.
可选地，如图2所示，现对图像传感器阵列80进行说明。本实施例中，所述图像传感器阵列80为薄膜晶体管-光电二极管二维传感器矩阵，所述薄膜晶体管-光电二极管二维传感器矩阵包括薄膜晶体管81和与薄膜晶体管81相连的光电二极管82。Optionally, as shown in FIG. 2, the image sensor array 80 will now be described. In this embodiment, the image sensor array 80 is a thin film transistor-photodiode two-dimensional sensor matrix. The thin film transistor-photodiode two-dimensional sensor matrix includes a thin film transistor 81 and a photodiode 82 connected to the thin film transistor 81.
薄膜晶体管-光电二极管二维传感器矩阵能以近于100%
的光利用率传递光信息，它具有高灵敏度、高灰度级和快速响应的图像质量，能对大面积、高信息容量的图像信息进行无失真地采样、读出，并可传输到计算机内进行数据储存、分析和按需要进行各种处理。Thin film transistor-photodiode two-dimensional sensor matrix can be nearly 100%
The light utilization rate of the light transfers light information. It has high sensitivity, high gray level and fast response image quality. It can sample and read out large-area and high-information image information without distortion, and can be transmitted to the computer. Perform data storage, analysis and various processing as required.
然本申请的设计不限于此，在其他实施例中，所述图像传感器阵列80还可以为CCD图像传感器（charge-coupled
device，感光耦合元件）或CMOS图像传感器（Complementary Metal Oxide
Semiconductor，互补式金属氧化物半导体）。However, the design of the present application is not limited to this, in other embodiments, the image sensor array 80 may also be a CCD image sensor (charge-coupled
device, photosensitive coupling element) or CMOS image sensor (Complementary Metal Oxide
Semiconductor, complementary metal oxide semiconductor).
在一实施例中，所述薄膜晶体管81为非晶硅薄膜晶体管，非晶硅薄膜晶体管具有高的开关比 （I
on /I off），其开关比高达10 7-10
8的量级，由于本实施例中，以高开关比的非晶硅薄膜晶体管作为开关元件，如此，所述薄膜晶体管81能够以几乎100%
占空比的寻址能力，明显提高与之配合的显示屏或图像传感器的质量。In an embodiment, the thin film transistor 81 is an amorphous silicon thin film transistor. The amorphous silicon thin film transistor has a high switching ratio (I on /I off ), and its switching ratio is as high as 10 7 -10 8 because of In this embodiment, an amorphous silicon thin-film transistor with a high switching ratio is used as a switching element. Thus, the thin-film transistor 81 can address the addressing ability with a duty ratio of almost 100%, which significantly improves the display screen or image sensor matched therewith. the quality of.
可选地，请继续参照图2，为了实现全彩扫描，本申请一实施例中，所述光电二极管82包括用于感测红光的第一光电二极管100、用于感测绿光的第二光电二极管200和用于感测蓝光的第三光电二极管300。Optionally, please continue to refer to FIG. 2. In order to achieve full-color scanning, in an embodiment of the present application, the photodiode 82 includes a first photodiode 100 for sensing red light, and a first photodiode for sensing green light. Two photodiodes 200 and a third photodiode 300 for sensing blue light.
在一实施例中，所述第一光电二极管100、所述第二光电二极管200和所述第三光电二极管300均为PIN型光电二极管82。PIN型光电二极管82具有结电容小、渡越时间短、灵敏度高等优点。然本申请的设计不限于此，在其他实施例中，所述第一光电二极管100、所述第二光电二极管200和所述第三光电二极管300还可以为PN型半导体。In an embodiment, the first photodiode 100, the second photodiode 200, and the third photodiode 300 are all PIN-type photodiodes 82. The PIN photodiode 82 has the advantages of small junction capacitance, short transit time, and high sensitivity. However, the design of the present application is not limited to this. In other embodiments, the first photodiode 100, the second photodiode 200, and the third photodiode 300 may also be PN-type semiconductors.
现对光电二极管82与薄膜晶体管81的连接方式进行说明，本实施例中，薄膜晶体管81与光电二极管82采用串联式耦合，具体地，薄膜晶体管具有栅极81a、源极81b和漏极81c，薄膜晶体管81的漏极81c连接下电极40，光电二极管82的N区连接上电极30。The connection mode of the photodiode 82 and the thin film transistor 81 will now be described. In this embodiment, the thin film transistor 81 and the photodiode 82 are coupled in series. Specifically, the thin film transistor has a gate 81a, a source 81b, and a drain 81c. The drain 81c of the thin film transistor 81 is connected to the lower electrode 40, and the N region of the photodiode 82 is connected to the upper electrode 30.
可选地，考虑到图像传感器的工作过程是接收物体的反射光，输出源自光电转换的每个像素的信号以获得图像。为了获得彩色图像，本申请提出如下至少两种方案：Alternatively, considering that the working process of the image sensor is to receive the reflected light of the object, output a signal from each pixel of the photoelectric conversion to obtain an image. In order to obtain color images, this application proposes at least two solutions as follows:
第一种方案是，所述光电二极管82上设置有色阻层（图未示），具体地，第一光电二极管100上设有第一色阻层，所述第一色阻层为红色色阻层；第二光电二极管200上设有第二色阻层，所述第二色阻层为绿色色阻层；第三光电二极管300上设有第三色阻层，所述第三色阻层为蓝色色阻层。如此，能够在图像传感器的光接收表面上为相应的像素提供R(
红色)、G( 绿色) 和B( 蓝色) 的彩膜，从而能够输出R信号、G信号 和B信号。The first solution is that a color resist layer (not shown) is provided on the photodiode 82. Specifically, a first color resist layer is provided on the first photodiode 100, and the first color resist layer is a red color resist Layer; a second color resist layer is provided on the second photodiode 200, the second color resist layer is a green color resist layer; a third color resist layer is provided on the third photodiode 300, the third color resist layer It is a blue color resist layer. In this way, it is possible to provide R(
Red), G (green), and B (blue) color filters to output R, G, and B signals.
可选地，请仍参照图2，为了省去彩膜制程，第二种方案是，所述PIN型光电二极管82包括N型半导体、P型半导体和夹设在N型半导体与P型半导体之间的本征层，所述本征层由光敏材料制成，其中，所述第一光电二极管100的本征层用于感测红光，所述第二光电二极管200的本征层用于感测绿光，所述第三光电二极管300的本征层用于感测蓝光。由于本征层由光敏材料制成，光敏材料可以感测相应颜色的光线，因此不需要彩膜制程，从而能够简化微发光二极管显示面板的生产工艺。Optionally, please still refer to FIG. 2, in order to omit the color film manufacturing process, the second solution is that the PIN-type photodiode 82 includes an N-type semiconductor, a P-type semiconductor, and an N-type semiconductor and a P-type semiconductor interposed therebetween The intrinsic layer is made of photosensitive material, wherein the intrinsic layer of the first photodiode 100 is used to sense red light, and the intrinsic layer of the second photodiode 200 is used to To sense green light, the intrinsic layer of the third photodiode 300 is used to sense blue light. Since the intrinsic layer is made of a photosensitive material, the photosensitive material can sense the light of the corresponding color, so the color film manufacturing process is not required, which can simplify the production process of the micro light-emitting diode display panel.
可选地，现对第一光电二极管100的本征层的成分进行详细说明。第一光电二极管100的本征层由硅锗氧化物材料制成，所述硅锗氧化物的硅元素、锗元素和氧元素的质量比为（0.1~0.3）：1：（0.1~0.3）。由于第一光电二极管100用于感测红光，红光波长最长，硅、锗、氧三种元素中，锗元素的能隙最小，Eg=0.67ev，吸收光的波长最长，因此第一光电二极管100的本征层的成分中，锗元素的质量占比最多。Optionally, the composition of the intrinsic layer of the first photodiode 100 will now be described in detail. The intrinsic layer of the first photodiode 100 is made of silicon germanium oxide material, and the mass ratio of silicon element, germanium element and oxygen element of the silicon germanium oxide is (0.1~0.3): 1: (0.1~0.3) . Since the first photodiode 100 is used to sense red light, the wavelength of the red light is the longest. Among the three elements of silicon, germanium, and oxygen, the energy gap of the germanium element is the smallest, Eg=0.67ev, the wavelength of the absorbed light is the longest, so the first In the composition of the intrinsic layer of a photodiode 100, the mass of germanium is the largest.
可选地，现对第二光电二极管200的本征层的成分进行详细说明。第二光电二极管200的本征层由硅锗氧化物材料制成，所述硅锗氧化物的硅元素、锗元素和氧元素的质量比为1：（0.5~0.7）：（0.3~0.5）。由于第二光电二极管200用于感测绿光，绿光波长较短，硅、锗、氧三种元素中，硅元素的能隙较大，Eg=1.12ev，吸收光的波长较短，因此第二光电二极管200的本征层的成分中，硅元素的质量占比最多。Optionally, the composition of the intrinsic layer of the second photodiode 200 will now be described in detail. The intrinsic layer of the second photodiode 200 is made of silicon germanium oxide material, and the mass ratio of silicon element, germanium element and oxygen element of the silicon germanium oxide is 1: (0.5~0.7): (0.3~0.5) . Since the second photodiode 200 is used to sense green light, the wavelength of the green light is short, and among the three elements of silicon, germanium, and oxygen, the energy gap of the silicon element is large, Eg=1.12ev, and the wavelength of absorbed light is short, so Among the components of the intrinsic layer of the second photodiode 200, the mass of silicon element accounts for the most.
可选地，现对第三光电二极管300的本征层的成分进行详细说明。第三光电二极管300的本征层由硅锗氧化物材料制成，所述硅锗氧化物的硅元素、锗元素和氧元素的质量比为1：（0.1~0.2）：（0.5~0.8）。由于第三光电二极管300用于感测蓝光，蓝光波长较短，硅、锗、氧三种元素中，硅元素的能隙较大，Eg=1.12ev，吸收光的波长较短，因此第三光电二极管300的本征层的成分中，硅元素的质量占比最多。Optionally, the composition of the intrinsic layer of the third photodiode 300 will now be described in detail. The intrinsic layer of the third photodiode 300 is made of silicon germanium oxide material, and the mass ratio of silicon element, germanium element and oxygen element of the silicon germanium oxide is 1: (0.1~0.2): (0.5~0.8) . Since the third photodiode 300 is used to sense blue light, the blue light has a shorter wavelength, and among the three elements of silicon, germanium, and oxygen, the energy gap of the silicon element is larger, Eg=1.12ev, and the wavelength of absorbed light is shorter, so the third Among the components of the intrinsic layer of the photodiode 300, the mass of silicon element accounts for the most.
可选地，如图1所示，为了避免微发光二极管显示面板出现眩光现象，本申请一实施例中，所述微发光二极管显示面板还包括防眩膜90，所述防眩膜90设置在所述上基板10背离所述上电极30的上表面。Optionally, as shown in FIG. 1, in order to avoid the glare phenomenon of the micro LED display panel, in an embodiment of the present application, the micro LED display panel further includes an anti-glare film 90, and the anti-glare film 90 is provided at The upper substrate 10 faces away from the upper surface of the upper electrode 30.
具体地，眩光现象指的是屏幕表面对接收到的光线进行反射，从而给图像的亮度以及衬比带来不同程度的负面影响。特别像液晶显示器之类具有低亮度特点的显示屏，其在高亮度光线下的应用，将会面临图像难以辨识的问题，因此会给使用者的眼睛带来伤害，设置防眩膜90能够有效地解决上述问题，从而能够避免眩光现象对使用者的视力造成损害。Specifically, the glare phenomenon refers to that the surface of the screen reflects the received light, thereby causing different degrees of negative effects on the brightness and contrast of the image. In particular, low-brightness display screens such as LCD monitors, when used in high-brightness light, will face the problem that the image is difficult to recognize, so it will cause harm to the user's eyes. The anti-glare film 90 can be effective To solve the above problems, it is possible to avoid the glare phenomenon from damaging the user's eyesight.
本申请还提出一种显示装置（图未示），该显示装置包括所述微发光二极管显示面板，该微发光二极管显示面板的具体结构参照上述实施例，由于本申请提出的显示装置采用了上述所有实施例的全部技术方案，因此至少具有上述实施例的技术方案所带来的所有优点，在此不再一一赘述。具体地，所述显示装置可以但不限于电视机、显示器等。The present application also proposes a display device (not shown). The display device includes the micro light-emitting diode display panel. The specific structure of the micro-light emitting diode display panel refers to the above embodiments. Since the display device proposed in this application uses the above All the technical solutions of all the embodiments therefore have at least all the advantages brought by the technical solutions of the above embodiments, which will not be repeated here. Specifically, the display device may be, but not limited to, a television, a display, or the like.
以上所述仅为本申请的优选实施例，并非因此限制本申请的专利范围，凡是在本申请的发明构思下，利用本申请说明书及附图内容所作的等效结构变换，或直接/间接运用在其他相关的技术领域均包括在本申请的专利保护范围内。The above are only the preferred embodiments of the present application, and therefore do not limit the patent scope of the present application. Any equivalent structural transformation or direct/indirect use of the description and drawings of the present application under the inventive concept of the present application All other related technical fields are included in the patent protection scope of this application.
Claims (19)
- 一种微发光二极管显示面板，其中，包括： A micro light-emitting diode display panel, including:上基板和下基板，所述上基板和所述下基板在第一方向上间隔设置；An upper substrate and a lower substrate, the upper substrate and the lower substrate are spaced apart in the first direction;上电极，设于所述上基板的靠近所述下基板的一侧；An upper electrode provided on a side of the upper substrate close to the lower substrate;下电极，设于所述下基板的靠近所述上基板的一侧；A lower electrode provided on a side of the lower substrate close to the upper substrate;第一微发光二极管、第二微发光二极管和第三微发光二极管，所述第一微发光二极管、第二微发光二极管和第三微发光二极管均设于所述上电极和所述下电极之间；以及，A first micro light emitting diode, a second micro light emitting diode and a third micro light emitting diode, the first micro light emitting diode, the second micro light emitting diode and the third micro light emitting diode are all arranged between the upper electrode and the lower electrode Between; and,图像传感器阵列，设于所述上电极和所述下电极之间，所述第一微发光二极管、第二微发光二极管、第三微发光二极管以及所述图像传感器阵列沿第二方向间隔排布。An image sensor array is provided between the upper electrode and the lower electrode, and the first micro light emitting diode, the second micro light emitting diode, the third micro light emitting diode and the image sensor array are arranged at intervals in the second direction .
- 如权利要求1所述的微发光二极管显示面板，其中，所述图像传感器阵列为电荷耦合器件图像传感器。The micro light emitting diode display panel according to claim 1, wherein the image sensor array is a charge coupled device image sensor.
- 如权利要求1所述的微发光二极管显示面板，其中，所述图像传感器阵列为互补式金属氧化物半导体图像传感器。The micro light-emitting diode display panel of claim 1, wherein the image sensor array is a complementary metal oxide semiconductor image sensor.
- 如权利要求1所述的微发光二极管显示面板，其中，所述图像传感器阵列为薄膜晶体管-光电二极管二维传感器矩阵，所述薄膜晶体管-光电二极管二维传感器矩阵包括薄膜晶体管和与薄膜晶体管相连的光电二极管。The micro light emitting diode display panel according to claim 1, wherein the image sensor array is a thin film transistor-photodiode two-dimensional sensor matrix, and the thin film transistor-photodiode two-dimensional sensor matrix includes a thin film transistor and is connected to the thin film transistor Photodiode.
- 如权利要求4所述的微发光二极管显示面板，其中，所述薄膜晶体管与所述光电二极管采用串联式耦合。The micro light emitting diode display panel of claim 4, wherein the thin film transistor and the photodiode are coupled in series.
- 如权利要求5所述的微发光二极管显示面板，其中，所述薄膜晶体管具有栅极、源极和漏极，薄膜晶体管的漏极连接所述下电极，所述光电二极管的N区连接所述上电极。The micro light emitting diode display panel of claim 5, wherein the thin film transistor has a gate, a source, and a drain, the drain of the thin film transistor is connected to the lower electrode, and the N region of the photodiode is connected to the Upper electrode.
- 如权利要求4所述的微发光二极管显示面板，其中，所述薄膜晶体管为非晶硅薄膜晶体管。The micro light emitting diode display panel of claim 4, wherein the thin film transistor is an amorphous silicon thin film transistor.
- 如权利要求4所述的微发光二极管显示面板，其中，所述光电二极管包括设置为感测红光的第一光电二极管、设置为感测绿光的第二光电二极管和设置为感测蓝光的第三光电二极管。The micro light-emitting diode display panel of claim 4, wherein the photodiode includes a first photodiode configured to sense red light, a second photodiode configured to sense green light, and a photodiode configured to sense blue light The third photodiode.
- 如权利要求8所述的微发光二极管显示面板，其中，所述第一光电二极管、所述第二光电二极管和所述第三光电二极管均为PN型光电二极管。The micro light-emitting diode display panel of claim 8, wherein the first photodiode, the second photodiode, and the third photodiode are all PN type photodiodes.
- 如权利要求8所述的微发光二极管显示面板，其中，所述第一光电二极管、所述第二光电二极管和所述第三光电二极管均为PIN型光电二极管。The micro light-emitting diode display panel of claim 8, wherein the first photodiode, the second photodiode, and the third photodiode are all PIN-type photodiodes.
- 如权利要求10所述的微发光二极管显示面板，其中，所述PIN型光电二极管包括N型半导体、P型半导体和夹设在N型半导体与P型半导体之间的本征层，所述本征层由光敏材料制成；The micro light-emitting diode display panel according to claim 10, wherein the PIN-type photodiode includes an N-type semiconductor, a P-type semiconductor, and an intrinsic layer interposed between the N-type semiconductor and the P-type semiconductor, the The sign layer is made of photosensitive material;所述第一光电二极管的本征层设置为感测红光，所述第二光电二极管的本征层设置为感测绿光，所述第三光电二极管的本征层设置为感测蓝光。The intrinsic layer of the first photodiode is configured to sense red light, the intrinsic layer of the second photodiode is configured to sense green light, and the intrinsic layer of the third photodiode is configured to sense blue light.
- 如权利要求11所述的微发光二极管显示面板，其中，所述第一光电二极管的本征层由硅锗氧化物材料制成，所述硅锗氧化物的硅元素、锗元素和氧元素的质量比为（0.1~0.3）：1：（0.1~0.3）。The micro light emitting diode display panel of claim 11, wherein the intrinsic layer of the first photodiode is made of silicon germanium oxide material, and the silicon element, germanium element and oxygen element of the silicon germanium oxide The mass ratio is (0.1~0.3): 1: (0.1~0.3).
- 如权利要求11所述的微发光二极管显示面板，其中，所述第二光电二极管的本征层由硅锗氧化物材料制成，所述硅锗氧化物的硅元素、锗元素和氧元素的质量比为1：（0.5~0.7）：（0.3~0.5）。The micro light emitting diode display panel according to claim 11, wherein the intrinsic layer of the second photodiode is made of silicon germanium oxide material, and the silicon element, germanium element and oxygen element of the silicon germanium oxide The mass ratio is 1: (0.5~0.7): (0.3~0.5).
- 如权利要求11所述的微发光二极管显示面板，其中，所述第三光电二极管的本征层由硅锗氧化物材料制成，所述硅锗氧化物的硅元素、锗元素和氧元素的质量比为1：（0.1~0.2）：（0.5~0.8）。The micro light emitting diode display panel of claim 11, wherein the intrinsic layer of the third photodiode is made of silicon germanium oxide material, and the silicon element, germanium element and oxygen element of the silicon germanium oxide The mass ratio is 1: (0.1~0.2): (0.5~0.8).
- 如权利要求8所述的微发光二极管显示面板，其中，所述第一光电二极管上设有第一色阻层，所述第二光电二极管上设有第二色阻层，所述第三光电二极管上设有第三色阻层。The micro light emitting diode display panel according to claim 8, wherein a first color resist layer is provided on the first photodiode, a second color resist layer is provided on the second photodiode, and the third photoelectric A third color resist layer is provided on the diode.
- 如权利要求15所述的微发光二极管显示面板，其中，所述第一色阻层为红色色阻层；所述第二色阻层为绿色色阻层；所述第三色阻层为蓝色色阻层。The micro light-emitting diode display panel according to claim 15, wherein the first color resist layer is a red color resist layer; the second color resist layer is a green color resist layer; and the third color resist layer is blue Color resist layer.
- 如权利要求1所述的微发光二极管显示面板，其中，所述微发光二极管显示面板还包括防眩膜，所述防眩膜设置在所述上基板背离所述上电极的上表面。The micro light emitting diode display panel of claim 1, wherein the micro light emitting diode display panel further comprises an anti-glare film, and the anti-glare film is provided on an upper surface of the upper substrate facing away from the upper electrode.
- 一种微发光二极管显示面板，其中，包括：A micro light-emitting diode display panel, including:上基板和下基板，所述上基板和所述下基板在第一方向上间隔设置；An upper substrate and a lower substrate, the upper substrate and the lower substrate are spaced apart in the first direction;上电极，设于所述上基板的靠近所述下基板的一侧；An upper electrode provided on a side of the upper substrate close to the lower substrate;下电极，设于所述下基板的靠近所述上基板的一侧；A lower electrode provided on a side of the lower substrate close to the upper substrate;第一微发光二极管、第二微发光二极管和第三微发光二极管，所述第一微发光二极管、第二微发光二极管和第三微发光二极管均设于所述上电极和所述下电极之间；以及，A first micro light emitting diode, a second micro light emitting diode and a third micro light emitting diode, the first micro light emitting diode, the second micro light emitting diode and the third micro light emitting diode are all arranged between the upper electrode and the lower electrode Between; and,图像传感器阵列，设于所述上电极和所述下电极之间，所述第一微发光二极管、第二微发光二极管、第三微发光二极管以及所述图像传感器阵列沿第二方向间隔排布；An image sensor array is provided between the upper electrode and the lower electrode, and the first micro light emitting diode, the second micro light emitting diode, the third micro light emitting diode and the image sensor array are arranged at intervals in the second direction ;所述上基板为彩膜玻璃基板，所述下基板为阵列玻璃基板，所述上电极为像素电极，所述下电极为公共电极。The upper substrate is a color film glass substrate, the lower substrate is an array glass substrate, the upper electrode is a pixel electrode, and the lower electrode is a common electrode.
- 一种显示装置，其中，包括微发光二极管显示面板，所述微发光二极管显示面板包括：A display device, comprising a micro light-emitting diode display panel, the micro-light emitting diode display panel comprising:上基板和下基板，所述上基板和所述下基板在第一方向上间隔设置；An upper substrate and a lower substrate, the upper substrate and the lower substrate are spaced apart in the first direction;上电极，设于所述上基板的靠近所述下基板的一侧；An upper electrode provided on a side of the upper substrate close to the lower substrate;下电极，设于所述下基板的靠近所述上基板的一侧；A lower electrode provided on a side of the lower substrate close to the upper substrate;第一微发光二极管、第二微发光二极管和第三微发光二极管，所述第一微发光二极管、第二微发光二极管和第三微发光二极管均设于所述上电极和所述下电极之间；以及，A first micro light emitting diode, a second micro light emitting diode and a third micro light emitting diode, the first micro light emitting diode, the second micro light emitting diode and the third micro light emitting diode are all arranged between the upper electrode and the lower electrode Between; and,图像传感器阵列，设于所述上电极和所述下电极之间，所述第一微发光二极管、第二微发光二极管、第三微发光二极管以及所述图像传感器阵列沿第二方向间隔排布。 An image sensor array is provided between the upper electrode and the lower electrode, and the first micro light emitting diode, the second micro light emitting diode, the third micro light emitting diode and the image sensor array are arranged at intervals in the second direction . The
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