CN101458121B - Light sensing apparatus and display device thereof - Google Patents

Light sensing apparatus and display device thereof Download PDF

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Publication number
CN101458121B
CN101458121B CN200710199739XA CN200710199739A CN101458121B CN 101458121 B CN101458121 B CN 101458121B CN 200710199739X A CN200710199739X A CN 200710199739XA CN 200710199739 A CN200710199739 A CN 200710199739A CN 101458121 B CN101458121 B CN 101458121B
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China
Prior art keywords
light
photosensing units
color
filter layer
light source
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CN200710199739XA
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CN101458121A (en
Inventor
王文俊
张俊钦
许景富
韩西容
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Wintek Corp
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Wintek Corp
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Abstract

The invention relates to a light sensing device and a display device thereof. The light sensing device comprises a filter element and a light sensing element; wherein, the filter element filters part of the ambient light and output the other part of light, so that the light sensing element can output a sensing signal according to the other part of the ambient light.

Description

Light sensing apparatus and display device thereof
Technical field
The present invention relates to a kind of light sensing apparatus and display device thereof, and particularly relate to a kind of light sensing apparatus and display device thereof with light sensing function.
Background technology
Technological increasingly mature along with display device, increasing electronic installation is with display device and its integration, like mobile phone or personal digital assistant.Thus, the user can not only watch image frame or Word message from display device, can also be via the information that display device showed, and further operating electronic devices.
Yet the display brightness of display device produces via backlight, and the backlight lightening time of display device is of a specified duration more, and the electric power that it consumed is big more.Moreover, the size of ambient brightness directly influences the visual comfort level of user.So, backlight illumination is adjusted with ambient brightness, promptly become more and more important problem.
Summary of the invention
The present invention is relevant for a kind of light sensing apparatus and display device thereof.When light sensing apparatus is arranged at display device, with making display device can adjust the brightness of backlight with the size of ambient brightness.
According to the present invention, a kind of light sensing apparatus is proposed.Light sensing apparatus comprises filter element and Photosensing Units, a part of light of filter element filtering environmental light source, and another part light of output environment light source.Photosensing Units can be exported sensing signal according to another part light of environment light source.
According to the present invention, a kind of display device is proposed.Display device comprises display panel, backlight, backlight control circuit and backlight drive circuit.Display panel has viewing area and neighboring area, wherein in the neighboring area, installs light sensing apparatus.Light sensing apparatus comprises filter element and Photosensing Units, a part of light of filter element filtering environmental light source, and another part light of output environment light source.Photosensing Units is exported sensing signal according to another part light of environment light source.
In addition, backlight control circuit comprises amplifying unit, analog/digital converter and microprocessor.In this backlight control circuit; Amplifying unit is according to sensing signal and reference signal output simulating signal; Then the analog/digital converter converting analogue signals is a digital signal, and microprocessor carries out calculation process to this digital signal afterwards, and the output backlight control signal.
Backlight drive circuit is exported the backlight drive signal to backlight according to the backlight control signal of backlight control circuit, makes backlight adjust brightness with ambient brightness.
For making the foregoing of the present invention can be more obviously understandable, hereinafter is special lifts a preferred embodiment, and is described with reference to the accompanying drawings as follows:
Description of drawings
Fig. 1 shows the synoptic diagram according to the display device of preferred embodiment of the present invention.
Fig. 2 shows the synoptic diagram of backlight control circuit.
Fig. 3 shows the circuit diagram of amplifying unit.
Fig. 4 shows the synoptic diagram of light sensing apparatus.
Fig. 5 shows the cut-away section synoptic diagram of display panel 11.
Fig. 6 shows the circuit diagram of Photosensing Units.。
Fig. 7 shows another circuit diagram of Photosensing Units.
Fig. 8 shows another circuit diagram of Photosensing Units.
Fig. 9 shows another circuit diagram of Photosensing Units.
Figure 10 shows another circuit diagram of Photosensing Units.
Figure 11 shows the structural representation according to the light sensing apparatus of the first embodiment of the present invention.
Figure 12 shows the structural representation that filter layer 432 has opening.
Figure 13 shows the structural representation according to the light sensing apparatus of the second embodiment of the present invention.
Figure 14 shows a kind of thin portion synoptic diagram of filter layer 434.
Figure 15 shows the another kind of thin portion synoptic diagram of filter layer 434.
Figure 16 shows the structural representation according to the light sensing apparatus of the third embodiment of the present invention.
The reference numeral explanation
1: display device
11: display panel
11A: viewing area
11B: neighboring area
111: thin film transistor (TFT)
12,20: back light system
12A, 21: backlight control circuit
12B, 22: backlight drive circuit
12C, 23: backlight
21A: amplifying unit
21B: analog/digital converter
21C: microprocessor
30: differential amplifier
40: light sensing apparatus
43,43 (1), 43 (2): filter element
45: Photosensing Units
432,434: filter layer
4322: opening
4342: the first color color filter films
4344: the second color color filter films
4346: the three color color filter films
43422: opening
A1: prodefined opening area
A2: prodefined opening area
As: the area of Photosensing Units 45
T1: light sensing transistor
T3: transistor
R1, R2: resistance
S1: backlight control signal
S2: backlight drive signal
S0 ': simulating signal
S0 ": digital signal
Vref: reference signal
Vphoto: sensing signal
L1, L2: light
Embodiment
Display device
Please refer to Fig. 1, it shows the synoptic diagram according to the display device of preferred embodiment of the present invention.Display device for example is used for portable electric device, like mobile phone or personal digital assistant.Display device 1 comprises display panel 11 and back light system 12, and display panel 11 is for example made by amorphous silicon, monocrystalline silicon or polysilicon.Back light system 12 is with the power of ambient brightness, and adjustment automatically exports the backlight intensity of display panel 11 to.
Further, display panel 11 comprises viewing area 11A (or being called active area) and neighboring area 11B (or being called non-display area), and neighboring area 11B is formed at around the 11A of viewing area.Viewing area 11A has a pel array, produces image frame in order to the picture signal according to input.And neighboring area 11B comprises at least one light sensing apparatus 40, in order to export sensing signal Vphoto accordingly to back light system 12 according to the power of ambient brightness.Wherein, light sensing apparatus 40 forms in identical technological process with the pixel (comprising colored filter and active member) of viewing area 11A synchronously.
Back light system 12 further comprises backlight control circuit 12A, backlight drive circuit 12B and backlight 12C.Backlight control circuit 12A is in order to receiving sensing signal Vphoto, and sensing signal Vphoto is exported backlight control signal S1 after signal Processing.Backlight drive circuit 12B then exports backlight drive signal S2 to backlight 12C according to backlight control signal S1, to adjust the light quantity that backlight 12C is exported.
Because the backlight intensity that back light system 12 exports display panel 11 to is according to the variation of ambient brightness and dynamically adjustment, so display device 1 has following advantage at least:
One, improves the surcharge of electronic installation with display device 1.
Two, save the consumption of power supply.
Three, improve the visual level of comfort of user.
Four, because the pixel of light sensing apparatus 40 and viewing area 11A forms synchronously, therefore more can simplify processing step and reduce production costs.
Five, therefore non-display area 11A, not only can not take viewing area 11A because light sensing apparatus 40 is arranged on neighboring area 11B, and more will effectively utilize the area of neighboring area 11B.
Six, can optionally adjust the use number of light sensing apparatus 40, so that splendid light sensing ability to be provided.
Backlight control circuit
Please refer to Fig. 2, it shows the synoptic diagram of backlight control circuit.Aforesaid backlight control circuit 12A for example is a backlight control circuit 21, and backlight control circuit 21 comprises amplifying unit 21A, analog/digital converter 21B and microprocessor 21C.Amplifying unit 21A exports simulating signal S0 ' according to sensing signal Vphoto and reference signal Vref, and analog/digital converter 21B converts simulating signal S0 ' into digital signal S0 ".Microprocessor 21C can be to digital signal S0 " carry out calculation process and export backlight control signal S1.22 of backlight drive circuits according to backlight control signal S1 output backlight drive signal S2 to backlight 23, the light quantity of being exported with adjustment backlight 23.
Amplifying unit
Please join Fig. 3, it shows the circuit diagram of amplifying unit.Fig. 2 shows amplifying unit 21A and for example is differential amplifier 30, and the voltage of its simulating signal S0 ' equals (R2/R1) * (Vref-Vphoto).The enlargement ratio of differential amplifier changes with the ratio of resistance R 2 and R1, is arranged in the voltage of the simulating signal S0 ' of particular range with generation through selecting suitable resistance R 2 and R1.Yet amplifying unit of the present invention is not limited to the differential amplifier of present embodiment, and any amplifier element of carrying out said function all can be used to replace differential amplifier, in order to enforcement of the present invention.
Light sensing apparatus
Please be simultaneously with reference to figure 4 and Fig. 5, Fig. 4 shows the synoptic diagram of light sensing apparatus, and Fig. 5 shows the cut-away section synoptic diagram of display panel 11.Light sensing apparatus 40 comprises filter element 43 and Photosensing Units 45.Photosensing Units 45 is for having the thin film transistor (TFT) of certain width length ratio, to form the light sensing transistor.In addition, the end points of Photosensing Units 45 promptly becomes a light sensing diode through suitable connection.Because Photosensing Units 45 forms with the thin film transistor (TFT) 111 of the pixel of viewing area 11A synchronously, so display panel 11 does not need to purchase separately photo-sensitive cell, itself promptly has good photoperceptivity.Thus, can not only simplify processing step, and will more can reduce production costs.
Moreover for fear of the part material of thin film transistor (TFT) in the intense light irradiation down, generation Staebler-Wronski effect causes the minimizing in photoelectric efficiency and serviceable life.The light L1 of environment light source will be earlier behind filter element 43 filtering part light, and another part light L2 of output environment light source is to Photosensing Units 45 again.45 another part light L2 according to environment light source of Photosensing Units export sensing signal Vphoto.
Because the light of environment light source reenters behind filter element 43 filtering part light and is incident upon Photosensing Units 45, therefore, not only prevents the catabiosis of Photosensing Units 45 effectively, the serviceable life that can also improve light sensing apparatus 40.
Please refer to Fig. 6, it shows the circuit diagram of Photosensing Units.Photosensing Units 45 for example is a light sensing transistor T 1, and light sensing transistor T 1 is serially connected with transistor T 3.The control end of light sensing transistor T 1 is electrically connected with its first end, to form a light sensing diode.First termination of light sensing transistor T 1 is received reference voltage VDD, and its second end is coupled to first end of transistor T 3.The grid receiving grid pole tension VG of transistor T 3, and the second end ground connection of transistor T 3.
When light sensing transistor T 1 receives the irradiation of environment light source, the equivalent impedance of transistor T 1 will change with light is strong and weak, and then change the voltage swing of sensing signal Vphoto.
Please refer to Fig. 7 to Figure 10, it shows another circuit diagram of Photosensing Units.In addition, also can a plurality of light sensing transistor Ts 1 be exported sensing signal Vphoto with the mode of light sensing diode parallel connection (as shown in Figure 7) or series connection (as shown in Figure 8).Perhaps, the mode of a plurality of light sensing transistor T 1 parallel connections (as shown in Figure 9) or series connection (shown in figure 10) is exported sensing signal Vphoto.
For the embodiment of light sensing apparatus 40 further is detailed; Following will be the example explanation with first embodiment to the, three embodiment, but the present invention is not limited thereto, those skilled in the art; Under the premise without departing from the spirit and scope of the present invention, when doing various changes and modification.
First embodiment
Please refer to Figure 11, it shows the structural representation according to the light sensing apparatus of the first embodiment of the present invention.Light sensing apparatus 40 for example is a light sensing apparatus 50, and aforesaid filter element 43 for example is a filter element 43 (1).Filter element 43 (1) comprises the filter layer 432 that is disposed at Photosensing Units 45 tops.Filter layer 432 for example is that (Black Matrix, BM), or polaroid and black matrix" also can as filter layer 432 simultaneously for polaroid (polarizer) or black matrix".
When filter layer 432 was black matrix", filter layer 432 had a predetermined thickness, and this predetermined thickness just makes the light L1 of environment light source penetrate an amount of part light L2 to Photosensing Units 45 through filter layer 432.Wherein, the predetermined thickness of filter layer 432 is preferably less than the thickness of the black matrix" of viewing area.For instance, when filter layer 432 was black matrix", its predetermined thickness for example was 0.01 μ m to 1 μ m, and comprised 0.01 μ m and 1 μ m.
Please refer to Figure 12, it shows the structural representation that filter layer 432 has opening.Light sensing apparatus 40 in the earlier figures 4 for example is the light sensing apparatus 60 of Figure 12.In addition, also can design opening 4322 in filter layer 432 tops with prodefined opening area A 1.The size of prodefined opening area A 1 just makes environment light source penetrate an amount of part light L2 to Photosensing Units 45 through filter layer 432.For instance, when filter layer 432 is black matrix", 10% to 90% of the area A s that its prodefined opening area A 1 is a Photosensing Units 45, and comprise 10% and 90%.
Second embodiment
Please refer to Figure 13, it shows the structural representation according to the light sensing apparatus of the second embodiment of the present invention.Light sensing apparatus 40 in the earlier figures 4 for example is the light sensing apparatus 70 of Figure 13, and second embodiment and the first embodiment difference are: filter element 43 is filter element 43 (2).Filter element 43 (2) not only comprises filter layer 432, also comprises filter layer 434.Filter layer 432 can be a black matrix", and filter layer 434 is disposed between filter layer 432 and the Photosensing Units 45, and filter layer 434 is formed by one or more colorized optical filtering film stack.
In same technological process, the color filter film of filter element 43 (2) forms with the color filter film that is positioned at viewing area 11A synchronously, thus can not only simplify processing step, and will more can reduce production costs.
A kind of in addition embodiment is that filter layer 432 is dispensed, and only gets final product as filter element 43 (2) with filter layer 434, and all the other parts same as the previously described embodiments repeat no more.
Please refer to Figure 14, it shows first kind of thin portion synoptic diagram of filter layer 434.Filter layer 434 for example comprises the first color chromatic filter layer 4342, the second color chromatic filter layer 4344 and the 3rd color chromatic filter layer 4346, and first color, second color and the 3rd color for example are red, green and blue.Wherein, the thickness range of the first color chromatic filter layer 4342, the second color chromatic filter layer 4344 and the 3rd color chromatic filter layer 4346 for example is respectively 0.3 μ m to 3 μ m, and comprises 0.3 μ m and 3 μ m respectively.
Filter layer 434 does not limit by the filter layer of three layers of different colours to be formed, and also can be made up of the filter layer of two-layer different colours, even as long as the filter layer of simple layer color promptly can have the effect of optical filtering.For example; Red and the green double-deck effect that filter layer appeared is just suitable good; This be because the filter layer filtering blue light of shorter wavelength in the surround lighting, lower the burn-in effects of surround lighting, thereby effectively prolong the life-span of Photosensing Units 45 Photosensing Units 45.
Please with reference to Figure 15, it shows the another kind of thin portion synoptic diagram of filter layer 434.In addition, the first color color filter film 4342 also can have the opening 43422 of prodefined opening area A 2.The size of prodefined opening area A 2 just makes environment light source penetrate an amount of part light L2 through filter layer 432 and 434.Wherein, prodefined opening area A 2 for example be Photosensing Units 45 area 10% to 100%, and comprise 10% and 100%.
The 3rd embodiment
Please refer to Figure 16, it shows the structural representation according to the light sensing apparatus of the third embodiment of the present invention.Light sensing apparatus 40 in the earlier figures 4 for example is the light sensing apparatus 80 of Figure 16, and the 3rd embodiment and the first embodiment difference are: filter element 43 is filter element 43 (3), and filter element 43 (3) is covered on the Photosensing Units 45.Filter element 43 (3) is metal material, organic material or the inorganic material etc. that have filtering functions and can be covered in Photosensing Units 45 tops, like aluminium, silicon nitride, molybdenum or printing ink etc.
When the material of aforesaid filter element 43 (3) was aluminium, the thickness of filter element 43 (3) for example was 10 dust to 500 dusts, and comprised 10 dusts and 500 dusts.In addition, when the material of filter element 43 (3) was silicon nitride, the thickness of filter element 43 (3) was 1 μ m to 5 μ m, and comprised 1 μ m and 5 μ m.In addition, when the material of filter element 43 (3) was molybdenum, the thickness of filter element 43 (3) for example was 10 dust to 500 dusts, and comprised 10 dusts and 500 dusts.Moreover when the material of filter element 43 (3) was printing ink, the thickness of filter element 43 (3) was 0.1 μ m to 5 μ m, and comprised 0.1 μ m and 5 μ m.
Can know that by above-mentioned explanation light sensing apparatus of the present invention sensitive context brightness is effectively also adjusted the brightness of backlight according to this, so can lower non-essential energy consumption significantly.In addition; Light sensing apparatus that the above embodiment of the present invention disclosed and display device are through the part light of filter element with the filtering environmental light source; Therefore can alleviate the sensing element catabiosis that the Staebler-Wronski effect is caused, and make the life-span of Photosensing Units prolong and improve the reliability of element.On the other hand, be same as general technology and be formed in the display device owing to light sensing apparatus of the present invention can adopt, so the expenditure that can reduce cost significantly.
In sum, though the present invention discloses as above with a preferred embodiment, it is not in order to limit the present invention.For example when display panel was organic LED panel, display panel can be used Photosensing Units of the present invention, with the power of ambient brightness, automatically adjusted the light intensity from main light emission.Those skilled in the art, under the premise without departing from the spirit and scope of the present invention, when doing some changes and modification.Therefore, protection scope of the present invention ought be as the criterion with the application's claim.

Claims (10)

1. light sensing apparatus is arranged at the non-display area of a display panel, and this light sensing apparatus comprises:
One filter element is in order to a part of light of filtering one environment light source, to export another part light of this environment light source; And
One Photosensing Units, subtend are disposed at a side of this filter element, export a sensing signal in order to another part light according to this environment light source,
Wherein this filter element comprises:
One first filter layer has a predetermined thickness, and this predetermined thickness just makes another part light of this environment light source of this filter element output to this Photosensing Units; And one second filter layer; Be formed between this Photosensing Units and this first filter layer, wherein this second filter layer has at least one color filter film, is formed between this first filter layer and this Photosensing Units; The thickness range of this color filter film is 0.3 μ m to 3 μ m, comprises 0.3 μ m and 3 μ m.
2. light sensing apparatus as claimed in claim 1; Wherein this color filter film has at least one opening; This opening has a prodefined opening area; This prodefined opening area is 10% to 100% of this Photosensing Units area, comprises 10% and 100%, and this prodefined opening area just makes another part light of this environment light source of this filter element output to this Photosensing Units.
3. light sensing apparatus as claimed in claim 1, wherein this Photosensing Units is that a light sensing transistor AND gate one light sensing diode is wherein a kind of.
4. display device comprises:
One display panel comprises:
One viewing area;
One neighboring area comprises:
One light sensing apparatus comprises:
One filter element has a filter layer, and this filter element is arranged at this neighboring area, in order to a part of light of filtering one environment light source, to export another part light of this environment light source; And
One Photosensing Units is in order to another part light output according to this environment light source
One sensing signal;
One backlight;
One backlight control circuit comprises:
One amplifying unit is exported a simulating signal according to this sensing signal and a reference signal;
One analog/digital converter is a digital signal in order to change this simulating signal; And
One microprocessor carries out calculation process to this digital signal, and exports a backlight control signal; And
One backlight drive circuit in order to export a backlight drive signal according to this backlight control signal to this backlight, makes this backlight with this environment light source adjustment brightness,
Wherein this filter layer has a predetermined thickness, and this predetermined thickness just makes another part light of this environment light source of this filter element output to this Photosensing Units,
Wherein this filter layer comprises at least one color filter film, and the thickness range of this color filter film is 0.3 μ m to 3 μ m, comprises 0.3 μ m and 3 μ m.
5. display device as claimed in claim 4; Wherein this color filter film has at least one opening; This opening has a prodefined opening area; This prodefined opening area is 10% to 100% of this Photosensing Units area, comprises 10% and 100%, and this prodefined opening area just makes another part light of this environment light source of this filter element output to this Photosensing Units.
6. display device as claimed in claim 4, wherein this Photosensing Units is the thin film transistor (TFT) of this display panel.
7. light sensing apparatus is arranged at the non-display area of a flat display apparatus, and this light sensing apparatus comprises:
One filter layer is in order to a part of light of filtering one environment light source, to export another part light of this environment light source; And
One Photosensing Units is disposed at this filter layer below, exports a sensing signal in order to another part light according to this environment light source,
Wherein this filter layer comprises one first color color filter film, and the thickness range of this first color color filter film is 0.3 μ m to 3 μ m, comprises 0.3 μ m and 3 μ m.
8. light sensing apparatus as claimed in claim 7, wherein this filter layer comprises one second color color filter film, with this first color colorized optical filtering film stack, the thickness range of this second color color filter film is 0.3 μ m to 3 μ m, comprises 0.3 μ m and 3 μ m.
9. light sensing apparatus as claimed in claim 8, wherein this filter layer comprises one the 3rd color color filter film, with this second color colorized optical filtering film stack, the thickness range of the 3rd color color filter film is 0.3 μ m to 3 μ m, comprises 0.3 μ m and 3 μ m.
10. light sensing apparatus as claimed in claim 7, wherein this Photosensing Units is the thin film transistor (TFT) of this display panel, this thin film transistor (TFT) is that monocrystalline silicon thin film transistor, amorphous silicon film transistor and polycrystalline SiTFT are wherein a kind of.
CN200710199739XA 2007-12-12 2007-12-12 Light sensing apparatus and display device thereof Expired - Fee Related CN101458121B (en)

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