CN103337503B - A kind of integrated OLED image transceiver device and pixel arrangement structure thereof - Google Patents
A kind of integrated OLED image transceiver device and pixel arrangement structure thereof Download PDFInfo
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- CN103337503B CN103337503B CN201310211282.5A CN201310211282A CN103337503B CN 103337503 B CN103337503 B CN 103337503B CN 201310211282 A CN201310211282 A CN 201310211282A CN 103337503 B CN103337503 B CN 103337503B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
Abstract
A kind of pixel arrangement structure of integrated OLED image transceiver device, described OLED image transceiver device comprises substrate, the OLED for luminescence on photosensitive photodiode and described substrate on described substrate, described pixel arrangement structure formed by described photodiode and described OLED, wherein, n × n photodiode the sensitive pixel elements be made up of n × n the photosensitive sub-pixel of photodiode, with the multiple OLED light emitting sub-pixel around described n × n photodiode sensitive pixel elements, form (n+2) × (n+2) photosensitive unit, arrange to form array in direction in length and breadth in multiple described (n+2) × (n+2) photosensitive unit edge, wherein n >=2.An integrated OLED image transceiver device, has above-mentioned pixel arrangement structure.Pixel arrangement structure of the present invention can make OLED image transceiver device obtain excellent display and imaging performance.
Description
Technical field
The present invention relates to OLED Display Technique, particularly relate to a kind of integrated OLED image transceiver device and pixel arrangement structure thereof.
Background technology
Organic luminescent device (OLED) has that luminosity is high, driving voltage is low, fast response time, without angle limitations, low-power consumption, ultralight ultra-thin, any shape can be possessed, color exports as advantages such as monochromatic, white or near infrared ray, life-span length, has huge application prospect in the field such as flat-panel monitor, planar light source.In conjunction with silicon base CMOS drive circuit, can the function such as integrated signal acquisition, signal transacting, control.
With reference to the example shown in Fig. 1, in this embodiment, photodiode is embedded in the micro-array of display of OLED and forms image transmission/reception device.Wherein, photodiode 7 pairs of visible rays are responsive near infrared light, and photodiode array forms imageing sensor further.OLED is made up of light reflection anode 8, organic luminous layer 5 and transparent cathode 9, and OLED array forms image display device.Intersect separate at photodiode side design OLED light emitting source, and luminous and photosensitive can parallel work-flow.
OLED image transceiver device shown in Fig. 1 is compared to the micro-display of traditional OLED, and maximum advantage is: integrative display and imaging function on same CMOS chip; External electro-optical device reduces, and HMD size reduces; System is lighter, cheap, with better function, performance is higher and power consumption is lower; Miniscope can be applied to, as HMD head-mounted display, running gear or micro-projection arrangement, HUD HUD, EVF etc.; Possess and penetrate display and the two-way micro-display of shooting with video-corder shadow, as interactive HMD, optical check etc.; Sensor, as optical sensor, as fluorescent, color, flow measurement etc.
But, in image transmission/reception device as shown in Figure 1, do not provide the pixel arrangement structure of OLED and image sensor array.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of pixel arrangement structure of integrated OLED image transceiver device is provided, improve display performance and imaging performance.
Another object is to provide the OLED image transceiver device with this pixel arrangement structure.
For achieving the above object, the present invention is by the following technical solutions:
A kind of pixel arrangement structure of integrated OLED image transceiver device, described OLED image transceiver device comprises the OLED for luminescence on photosensitive photodiode and described substrate on substrate, described substrate, described pixel arrangement structure formed by described photodiode and described OLED, wherein
N × n photodiode the sensitive pixel elements be made up of n × n the photosensitive sub-pixel of photodiode, with the multiple OLED light emitting sub-pixel around described n × n photodiode sensitive pixel elements, form (n+2) × (n+2) photosensitive unit
Arrange to form array in direction in length and breadth in multiple described (n+2) × (n+2) photosensitive unit edge,
Wherein n >=2.
Preferably, on horizontal or longitudinal, the one or more OLED luminescence unit be made up of OLED light emitting sub-pixel in interval between adjacent two (n+2) × (n+2) photosensitive unit.
Preferably, the multiple OLED light emitting sub-pixel around described n × n photodiode sensitive pixel elements have identical or not identical structure.
Preferably, described multiple OLED light emitting sub-pixel launches R/G/B monochromatic light, white light or colourama on the whole, and each monochromatic light in described colourama is obtained by colour filter by white light OLED light emitting sub-pixel or obtained by R/G/B monochromatic light OLED light emitting sub-pixel.
Preferably, the OLED light emitting sub-pixel forming described OLED luminescence unit has identical or not identical structure.
Preferably, described OLED luminescence unit launches R/G/B monochromatic light, white light or colourama on the whole, and each monochromatic light in described colourama is obtained by colour filter by white light OLED light emitting sub-pixel or obtained by R/G/B monochromatic light OLED light emitting sub-pixel.
Preferably, described n × n photodiode sensitive pixel elements realizes colour imaging by colour filter.
Preferably, n is 2, described n × n photodiode sensitive pixel elements is 2 × 2 photodiode sensitive pixel elements, the wherein corresponding green photodiode of the photosensitive sub-pixel of the photodiode of upper left, the corresponding blue colour photodiode of the photosensitive sub-pixel of photodiode of lower-left, the corresponding green photodiode of the photosensitive sub-pixel of photodiode of bottom right, the corresponding red photodiode of the photosensitive sub-pixel of photodiode of upper right.
Preferably, the size of OLED light emitting sub-pixel and the photosensitive sub-pixel of photodiode is 8 × 8 μm
2, the centre-to-centre spacing of adjacent two (n+2) × (n+2) photosensitive unit is 160 μm.
An integrated OLED image transceiver device, comprise the OLED for luminescence on photosensitive photodiode and described substrate on substrate, described substrate, described photodiode and described OLED have above-mentioned pixel arrangement structure.
Advantageous Effects of the present invention:
The pixel arrangement structure of the present invention to OLED image transceiver device is optimized design, not only increase photosensitive area, therefore improve image device at visible ray near infrared sensitivity, also improve display performance, ensure that this OLED image transceiver device has enough displays and imaging resolution.Preferred embodiment can obtain more advantage, such as, the one or more OLED luminescence unit in interval between two adjacent photosensitive units, the performance such as display brightness and resolution can be significantly improved, such as, colour filter is set on photodiode photosensitive sub-pixel surface, photosensitive unit colour imaging can be realized.
Accompanying drawing explanation
Fig. 1 is the generalized section of OLED image transceiver device;
Fig. 2 is the photosensitive unit schematic diagram of the embodiment of the present invention one;
Fig. 3 is the pel array arrangement architecture figure of the embodiment of the present invention one;
Fig. 4 is the OLED light emitting sub-pixel arrangement mode figure of further embodiment of this invention;
Fig. 5 is the pel array arrangement architecture figure of further embodiment of this invention;
Fig. 6 is the photosensitive unit schematic diagram of further embodiment of this invention;
Fig. 7 is the pel array arrangement architecture figure of further embodiment of this invention;
Fig. 8 is the OLED light emitting sub-pixel arrangement mode figure of further embodiment of this invention;
Fig. 9 is the pel array arrangement architecture figure of further embodiment of this invention;
Figure 10 is the photosensitive unit schematic diagram of further embodiment of this invention;
Figure 11 is the pel array arrangement architecture figure of further embodiment of this invention.
Embodiment
Below in conjunction with accompanying drawing, embodiments of the invention are elaborated.It is emphasized that following explanation is only exemplary, instead of in order to limit the scope of the invention and apply.
Consult Fig. 2-11, in certain embodiments, a kind of pixel arrangement structure of integrated OLED image transceiver device, formed by the described photodiode in described OLED image transceiver device and described OLED, wherein, n × n photodiode the sensitive pixel elements be made up of n × n the photosensitive sub-pixel of photodiode, with the multiple OLED light emitting sub-pixel around described n × n photodiode sensitive pixel elements, form (n+2) × (n+2) photosensitive unit, arrange to form array in direction in length and breadth in multiple described (n+2) × (n+2) photosensitive unit edge, wherein n >=2.In typical embodiment, n=2,2 × 2 photodiode sensitive pixel elements be namely made up of 4 photosensitive sub-pixels of photodiode, around 2 × 2 photodiode sensitive pixel elements, around there being 12 OLED light emitting sub-pixel, form 4 × 4 photosensitive units.N also can be greater than 2, the photosensitive sub-pixel of the photodiode in each photosensitive unit and the OLED light emitting sub-pixel also corresponding increase around photodiode sensitive pixel elements.
Arrange to form array in direction in length and breadth in multiple photosensitive unit edge, can be as shown in Figure 3, arranging with direct abutment, also can be as shown in Fig. 5,7,9,11, the one or more OLED luminescence unit be made up of OLED light emitting sub-pixel in interval between neighboring photosensitive units.Illustrated embodiment is only arranged on interval transversely, also can arrange the interval longitudinally similarly.
Fig. 2,3 illustrates a kind of pixel arrangement structure of OLED image transceiver device of embodiment.In pixel arrangement structure, 4 × 4 photosensitive units as shown in Figure 2.4 × 4 photosensitive units comprise 4 square light electric diode sub-pixels 1,2,3,4 and form 2 × 2 photodiode sensitive pixel elements, and around multiple OLED light emitting sub-pixel of this photodiode sensitive pixel elements.Multiple OLED light emitting sub-pixel can have identical OLED structure, sends monochrome or white light.In this embodiment, OLED sends ruddiness, represents with R.Based on this 4 × 4 photosensitive unit, edge in length and breadth direction arrangement forms the pel array of OLED image transceiver device, as shown in Figure 3.The benefit of this pixel arrangement structure is adopted to be: each photodiode unit comprises 4 sub-pixels, increases photosensitive area, therefore improves image device at visible ray near infrared sensitivity; Also ensure that OLED image transceiver device has enough displays and imaging resolution.This pixel arrangement structure can realize monochrome image display and black and white imaging and near infrared imaging.
Consult Fig. 4 and Fig. 5, in another kind of embodiment, the full-luminous pixel cell of above-mentioned 4 × 4 one or more 4 onesize × 4OLED in photosensitive unit interval, to improve display performance.The full-luminous pixel cell of this OLED can be made up of 2 × 2 elementary cells, and as shown in Figure 4, in this embodiment, OLED sends ruddiness to this elementary cell, represents with R.As the object lesson of in this embodiment, light emitting sub-pixel size can be 8 × 8 μm
2, photodiode sub-pixel is same size 8 × 8 μm
2, photodiode sensitive pixel elements centre-to-centre spacing that two adjacent is made up of the photosensitive sub-pixel 1,2,3,4 of the photodiode centre-to-centre spacing of two neighboring photosensitive units (also i.e.) is 160 μm, as shown in Figure 5.Pixel adopts the benefit of this arrangement architecture to be: display brightness significantly improves, and display resolution also improves, and also ensure that this image sensor array has suitable resolution simultaneously.
In another kind of embodiment, the structure of 4 × 4 photosensitive units as shown in Figure 6.4 × 4 photosensitive units comprise 4 square light electric diode sub-pixels 1,2,3,4 and form 2 × 2 photodiode sensitive pixel elements, and around multiple OLED light emitting sub-pixel of this photodiode sensitive pixel elements, form the pixel of this OLED image transceiver device of 4 × 4.Multiple OLED light emitting sub-pixel can have identical or different OLED structure, thus sends colourama.Concrete example adopts a white light OLED, and R/G/B is realized by colour filter.Based on this pixel cell, edge in length and breadth direction arrangement forms the pel array of this OLED image transceiver device, as shown in Figure 7.This pixel arrangement structure can realize coloured image display and black and white imaging and near infrared imaging.
Consult Fig. 8 and Fig. 9, in another kind of embodiment, in order to improve display performance, the full-luminous pixel cell of the one or more 4 onesize × 4OLED in interval between above-mentioned 4 × 4 photosensitive units.The full-luminous pixel cell of this OLED can be made up of 2 × 2 elementary cells, and this elementary cell as shown in Figure 8.Elementary cell comprises 4 OLED light emitting sub-pixel, and these light emitting sub-pixel have identical or different OLED structure, and can send colourama.Concrete example is that each light emitting sub-pixel adopts a white light OLED, and R/G/B is realized by colour filter, and W sub-pixel does not have colour filter.As an object lesson in this embodiment, light emitting sub-pixel is of a size of 8 × 8 μm
2, photodiode sub-pixel same size is 8 × 8 μm
2, two adjacent photodiode sensitive pixel elements centre-to-centre spacing be made up of the photosensitive sub-pixel 1,2,3,4 of photodiode are 160 μm, as shown in Figure 9.Pixel adopts the benefit of this arrangement architecture to be: can realize colour element, and improve display brightness and display resolution, also ensure that this imageing sensor has suitable resolution simultaneously.
In another kind of embodiment, 4 × 4 photosensitive units as shown in Figure 10.4 × 4 photosensitive units comprise 4 photosensitive sub-pixels 1,2,3,4 of photodiode and form 2 × 2 photodiode sensitive pixel elements, and at onesize multiple OLED light emitting sub-pixel of photodiode unit surrounding, to form the pixel of OLED image transceiver device of 4 × 4.Have colour filter above each photodiode sub-pixel, colour filter can adopt typical Bayer arrangement mode, the corresponding green photodiode of its sub-pixel 1,3, the corresponding blue sensitive unit of sub-pixel 2, the corresponding red sensitive unit of sub-pixel 4.Each OLED light emitting sub-pixel has identical or different OLED structure, sends colourama.Concrete example is that each OLED light emitting sub-pixel adopts a white light OLED, and R/G/B is realized by colour filter.Based on this 4 × 4 photosensitive unit, edge direction arranged adjacent in length and breadth, or the full-luminous pixel cell of the one or more OLED in interval.Wherein the full-luminous pixel of OLED has R/G/B/W arrangement mode.As an object lesson in this embodiment, light emitting sub-pixel is of a size of 8 × 8 μm
2, photodiode sub-pixel size is similarly 8 × 8 μm
2, two adjacent photodiode sensitive pixel elements centre-to-centre spacing be made up of the photosensitive sub-pixel 1,2,3,4 of photodiode are 160 μm, as shown in figure 11.Pixel adopts this arrangement architecture, can form high-quality coloured image.
Other embodiments are about a kind of integrated OLED image transceiver device, consult Fig. 1, and it has photodiode on substrate, substrate and OLED, and photodiode and OLED can have the pixel arrangement structure of above-mentioned any embodiment, repeat no more herein.
Above content is in conjunction with concrete preferred implementation further description made for the present invention, can not assert that specific embodiment of the invention is confined to these explanations.For general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, some simple deduction or replace can also be made, all should be considered as belonging to protection scope of the present invention.
Claims (9)
1. the pixel arrangement structure of an integrated OLED image transceiver device, described OLED image transceiver device comprises the OLED for luminescence on photosensitive photodiode and described substrate on substrate, described substrate, it is characterized in that, described pixel arrangement structure formed by described photodiode and described OLED, wherein
N × n photodiode the sensitive pixel elements be made up of n × n the photosensitive sub-pixel of photodiode, with the multiple OLED light emitting sub-pixel around described n × n photodiode sensitive pixel elements, form (n+2) × (n+2) photosensitive unit
Arrange to form array in direction in length and breadth in multiple described (n+2) × (n+2) photosensitive unit edge,
Wherein n is 2, described n × n photodiode sensitive pixel elements is 2 × 2 photodiode sensitive pixel elements, the wherein corresponding green photodiode of the photosensitive sub-pixel of the photodiode of upper left, the corresponding blue colour photodiode of the photosensitive sub-pixel of photodiode of lower-left, the corresponding green photodiode of the photosensitive sub-pixel of photodiode of bottom right, the corresponding red photodiode of the photosensitive sub-pixel of photodiode of upper right.
2. pixel arrangement structure as claimed in claim 1, is characterized in that, on horizontal or longitudinal, and the one or more OLED luminescence unit be made up of OLED light emitting sub-pixel in interval between adjacent two (n+2) × (n+2) photosensitive unit.
3. pixel arrangement structure as claimed in claim 1 or 2, it is characterized in that, the multiple OLED light emitting sub-pixel around described n × n photodiode sensitive pixel elements have identical or not identical structure.
4. pixel arrangement structure as claimed in claim 1 or 2, it is characterized in that, described multiple OLED light emitting sub-pixel launches R/G/B monochromatic light, white light or colourama on the whole, and each monochromatic light in described colourama is obtained by colour filter by white light OLED light emitting sub-pixel or obtained by R/G/B monochromatic light OLED light emitting sub-pixel.
5. pixel arrangement structure as claimed in claim 2, it is characterized in that, the OLED light emitting sub-pixel forming described OLED luminescence unit has identical or not identical structure.
6. pixel arrangement structure as claimed in claim 2, it is characterized in that, described OLED luminescence unit launches R/G/B monochromatic light, white light or colourama on the whole, and each monochromatic light in described colourama is obtained by colour filter by white light OLED light emitting sub-pixel or obtained by R/G/B monochromatic light OLED light emitting sub-pixel.
7. pixel arrangement structure as claimed in claim 1 or 2, it is characterized in that, described n × n photodiode sensitive pixel elements realizes colour imaging by colour filter.
8. pixel arrangement structure as claimed in claim 1 or 2, it is characterized in that, the size of OLED light emitting sub-pixel and the photosensitive sub-pixel of photodiode is 8 × 8 μm
2, the centre-to-centre spacing of adjacent two (n+2) × (n+2) photosensitive unit is 160 μm.
9. an integrated OLED image transceiver device, comprise the OLED for luminescence on photosensitive photodiode and described substrate on substrate, described substrate, it is characterized in that, described photodiode and described OLED have the pixel arrangement structure as described in any one of claim 1 to 8.
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| CN105006479B (en) * | 2014-04-23 | 2018-04-20 | 群创光电股份有限公司 | Display base plate and apply its display device |
| CN105304682B (en) * | 2015-10-20 | 2019-05-28 | 深圳典邦科技有限公司 | A kind of silicon substrate OLED image transceiver device and preparation method thereof |
| CN105824124B (en) * | 2016-05-30 | 2018-12-25 | 京东方科技集团股份有限公司 | A kind of display panel and display device |
| CN106019671B (en) * | 2016-07-22 | 2023-12-22 | 杨永建 | Unit, assembly and board integrating display and camera shooting |
| CN108666342B (en) * | 2017-03-31 | 2021-02-09 | 京东方科技集团股份有限公司 | Display panel, manufacturing method and display device |
| CN107728361B (en) * | 2017-09-19 | 2020-10-23 | 捷开通讯(深圳)有限公司 | Display panel with camera shooting function and electronic equipment |
| CN109473467B (en) * | 2018-12-13 | 2021-02-26 | 武汉华星光电半导体显示技术有限公司 | Display panel with photosensitive function and electronic device |
| CN109873017B (en) * | 2019-02-28 | 2021-01-08 | 维沃移动通信有限公司 | Display panel and terminal |
| CN110650278A (en) * | 2019-10-12 | 2020-01-03 | Oppo广东移动通信有限公司 | Image sensor, camera module and electronic equipment |
| CN110993665B (en) * | 2019-12-06 | 2022-04-29 | 云谷（固安）科技有限公司 | Pixel arrangement structure and display panel |
| CN112863423B (en) * | 2021-02-22 | 2022-07-05 | 合肥维信诺科技有限公司 | Display panel and display device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201103143A (en) * | 2009-07-02 | 2011-01-16 | Au Optronics Corp | Organic light emitting diode touch display |
| CN103107172A (en) * | 2013-01-15 | 2013-05-15 | 深圳典邦科技有限公司 | Organic lighting emitting diode (OLED) image transmitting and receiving device of micro-display integrated back lighting image sensor |
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|---|---|---|---|---|
| US7521719B2 (en) * | 2004-08-13 | 2009-04-21 | Paul Steven Schranz | Light emitting and image sensing device and apparatus |
| US8742309B2 (en) * | 2011-01-28 | 2014-06-03 | Aptina Imaging Corporation | Imagers with depth sensing capabilities |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201103143A (en) * | 2009-07-02 | 2011-01-16 | Au Optronics Corp | Organic light emitting diode touch display |
| CN103107172A (en) * | 2013-01-15 | 2013-05-15 | 深圳典邦科技有限公司 | Organic lighting emitting diode (OLED) image transmitting and receiving device of micro-display integrated back lighting image sensor |
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