CN109031823A

CN109031823A - Display screen, electronic equipment and its control method

Info

Publication number: CN109031823A
Application number: CN201810858392.3A
Authority: CN
Inventors: 杨乐
Original assignee: Guangdong Oppo Mobile Telecommunications Corp Ltd
Current assignee: Guangdong Oppo Mobile Telecommunications Corp Ltd
Priority date: 2018-07-31
Filing date: 2018-07-31
Publication date: 2018-12-18
Anticipated expiration: 2038-07-31
Also published as: CN109031823B

Abstract

The application discloses a kind of display screen, including a plurality of grid line, multiple data lines and a plurality of driving line, a plurality of grid line and multiple data lines transposition insulator arrange and form multiple sub-pixels of array arrangement, it is equipped with first film transistor and pixel capacitance in each sub-pixel, photoelectric sensor is equipped in part or all of sub-pixel to form identification sub-pixel.In the same identification sub-pixel, first film transistor includes grid, first end and second end, the grid of first film transistor is electrically connected to grid line, the first end of first film transistor is electrically connected to data line, the second end of first film transistor is electrically connected to pixel capacitance, the input terminal electrical connection driving line of photoelectric sensor, the output end of photoelectric sensor are electrically connected to the second end of first film transistor, and photoelectric sensor carries the target light of user fingerprints information for identification.The screen of above-mentioned display screen accounts for relatively high.A kind of electronic equipment and its control method is also disclosed in the application.

Description

Display screen, electronic equipment and its control method

Technical field

This application involves electronic technology field more particularly to a kind of display screen, using the electronic equipment and electricity of the display screen The control method of sub- equipment.

Background technique

The fingerprint recognition component of conventional electronic devices is in occupation of the space of electronic equipment non-display area, so that electronic equipment It is limited to shield accounting raising.And as screen accounting demand of the user to electronic equipment is higher and higher, how to reduce fingerprint recognition component The area of the non-display area of electronic equipment is occupied, becomes problem to be solved to improve the screen accounting of electronic equipment.

Summary of the invention

The application provides a kind of screen accounting higher display screen, electronic equipment and electronic equipment using the display screen Control method.

The embodiment of the present application adopts the following technical scheme that

On the one hand, a kind of display screen, including a plurality of grid line, multiple data lines and a plurality of driving line are provided, it is described a plurality of Grid line and the multiple data lines transposition insulator arrange and form multiple sub-pixels of array arrangement, set in each sub-pixel There are first film transistor and pixel capacitance, photoelectric sensor is equipped in the part or all of sub-pixel to form the sub- picture of identification Element；

In the same identification sub-pixel, the first film transistor includes grid, first end and second end, institute The grid for stating first film transistor is electrically connected to the grid line, and the first end of the first film transistor is electrically connected to institute Data line is stated, the second end of the first film transistor is electrically connected to the pixel capacitance, the input of the photoelectric sensor End is electrically connected the driving line, and the output end of the photoelectric sensor is electrically connected to the second end of the first film transistor, The photoelectric sensor carries the target light of user fingerprints information for identification.

On the other hand, a kind of electronic equipment, including controller and above-mentioned display screen are also provided, the controller is electrically connected institute State display screen.

In another aspect, also providing the control method of a kind of electronic equipment, the electronic equipment includes controller and display screen, The a plurality of grid line of the display screen, multiple data lines and a plurality of driving line, a plurality of grid line and the multiple data lines are handed over Fork insulation arranges and forms multiple sub-pixels of array arrangement, and first film transistor and pixel electricity are equipped in each sub-pixel Hold, photoelectric sensor is equipped in the part or all of sub-pixel to form identification sub-pixel；

In the same identification sub-pixel, the first film transistor includes grid, first end and second end, institute The grid for stating first film transistor is electrically connected to the grid line, and the first end of the first film transistor is electrically connected to institute Data line is stated, the second end of the first film transistor is electrically connected to the pixel capacitance, the input of the photoelectric sensor End is electrically connected the driving line, and the output end of the photoelectric sensor is electrically connected to the second end of the first film transistor, The photoelectric sensor carries the target light of user fingerprints information for identification；

One frame time of the display screen includes display time interval and identification period；

The control method of the electronic equipment includes:

In the display time interval of the display screen, the controller loads the first signal on the grid line to open First film transistor is stated, the controller loads gray scale voltage on the data line and is transmitted to the pixel capacitance, with Show the identification sub-pixel；

In the identification period of the display screen, the controller loads second signal on the grid line to open State first film transistor, the controller load driver signal and is transmitted to the photoelectric sensor on the driving line, So that the photoelectric sensor forms electric signal according to the target light and is exported by the data line.

In this application, since the photoelectric sensor is set in the identification sub-pixel, the identification sub-pixel is located at In the viewing area of the display screen, therefore fingerprint recognition mould group is formed by by one or more photoelectric sensors can set In the viewing area, the fingerprint recognition mould group is not necessarily to occupy the non-display area space of the display screen, the display screen Non-display area can reduce compared to traditional display screen, and the viewing area of the display screen can increase compared to traditional display screen, To improve the screen accounting of the display screen and the electronic equipment using the display screen.The identification sub-pixel is aobvious Show grid line described in circuit part and identification circuit fractional reuse, the first film transistor and the data line, with simplification The circuit of the identification sub-pixel, so that the circuit structure of the identification sub-pixel is relatively simple, cost is relatively low.

Detailed description of the invention

In order to illustrate more clearly of the technical solution of the application, attached drawing needed in embodiment will be made below Simply introduce, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the application, general for this field For logical technical staff, without creative efforts, other attached drawings can also be obtained such as these attached drawings.

Fig. 1 is the structural schematic diagram of a kind of electronic equipment provided by the present application；

Fig. 2 is the front view of the display screen of electronic equipment shown in Fig. 1；

Fig. 3 is the schematic diagram of the partial circuit of display screen shown in Fig. 2；

Fig. 4 is that the schematic diagram of the partial circuit of sub-pixel in one embodiment is identified in circuit shown in Fig. 3；

Fig. 5 is a kind of driver' s timing figure of the circuit of identification sub-pixel shown in Fig. 4 in use state；

Fig. 6 is that the schematic diagram of the partial circuit of sub-pixel in another embodiment is identified in circuit shown in Fig. 3；

Fig. 7 is a kind of driver' s timing figure of the circuit of identification sub-pixel shown in Fig. 6 in use state；

Fig. 8 is the structural schematic diagram of display screen provided by the present application in the first embodiment；

Fig. 9 is the schematic diagram of the part-structure of the array substrate of display screen shown in Fig. 8 in one embodiment；

Figure 10 is the decomposition texture schematic diagram of structure shown in Fig. 9；

Figure 11 is the schematic diagram of the part-structure of the array substrate of display screen shown in Fig. 8 in another embodiment；

Figure 12 is the schematic diagram of another part structure of the array substrate of display screen shown in Fig. 8；

Figure 13 is the schematic diagram of the part-structure of the color membrane substrates of display screen shown in Fig. 8；

Figure 14 is the structural schematic diagram of display screen provided by the present application in this second embodiment；

Figure 15 is the structural schematic diagram of the part-structure of display screen shown in Figure 14 in one embodiment；

Figure 16 is the decomposition texture schematic diagram of structure shown in Figure 15；

Figure 17 is the structural schematic diagram of the part-structure of display screen shown in Figure 14 in another embodiment；

Figure 18 is structural schematic diagram of the part-structure of display screen shown in Figure 14 in another embodiment；

Figure 19 is the schematic diagram of another part structure of display screen shown in Figure 14；

Figure 20 is the flow chart of the control method of a kind of electronic equipment provided by the present application.

Specific embodiment

Referring to Fig. 1, Fig. 1 is the structural schematic diagram of a kind of electronic equipment 1000 provided by the present application.

The application electronic equipment 1000 can be any equipment for having communication and store function, such as: tablet computer, hand Mechanical, electrical sub- reader, remote controler, personal computer (Personal Computer, PC), laptop, mobile unit, net The equipment such as network TV, wearable device.

The electronic equipment 1000 includes display screen 100 and controller 200.The controller 200 is electrically connected the display Screen 100.Electrical connection includes that power supply connection is connected with signal in the application.The electronic equipment 1000 further includes shell 300, described Display screen 100 is installed on the shell 300, and the controller 200 is contained in inside the shell 300.

Referring to Figure 2 together and Fig. 3, Fig. 2 be electronic equipment 1000 shown in Fig. 1 display screen 100 front view, Fig. 3 is The schematic diagram of the partial circuit of display screen 100 shown in Fig. 2.

The display screen 100 includes viewing area 1001 and the non-display area 1002 around the viewing area 1001 setting.Institute Stating display screen 100 includes a plurality of grid line 10 and multiple data lines 20." a plurality of " is meant that two or more.It is described more Grid line 10 and 20 transposition insulator of multiple data lines arrange and form multiple sub-pixels 1003 of array arrangement." multiple " It is meant that two or more.The grid line 10 of adjacent two and adjacent two data lines 20 intersected with it One is limited jointly for the region of a sub-pixel 1003 to be arranged.

The display screen 100 further includes gate driving circuit 30 and data drive circuit 40.The gate driving circuit 30 The controller 200 is electrically connected with the data drive circuit 40.The a plurality of grid line 10 is electrically connected the gate driving electricity Road 30.The multiple data lines 20 are electrically connected the data drive circuit 40.

The sub-pixel 1003 is located in the viewing area 1001 of the display screen 100.The sub-pixel 1003 can be used in Show picture.Multiple sub-pixels 1003 constitute a pixel unit.For example, a pixel unit includes described in three Sub-pixel 1003, three sub-pixels 1003 are respectively used to be displayed in red (R), green (G) and blue (B) picture.It is another In embodiment, a pixel unit includes four sub-pixels 1003, and four sub-pixels 1003 are respectively used to show Show that red (R), green (G), blue (B) and white (W) picture or four sub-pixels 1003 are respectively used to be displayed in red (R), green (G), blue (B) and yellow (Y) picture.

First film transistor (Thin Film Transistor, TFT) 50 and picture are equipped in each sub-pixel 1003 Plain capacitor 60.Photoelectric sensor 70, which is equipped with, in the part or all of sub-pixel 1003 identifies sub-pixel 1004 to be formed.It is described Photoelectric sensor 70 carries the target light of user fingerprints information for identification.Described in being formed after light is reflected by user's finger When target light, since the ridge in finger print lines is different from the reflection case of paddy, by analyzing the target light Distribution and light intensity, the fingerprint lines of user's finger can be obtained, so carried in the target light user fingerprint letter Breath.The identification sub-pixel 1004 can be used in identifying the finger print information of user's finger.

In one embodiment, whole sub-pixels 1003 is provided with the photoelectric sensor 70, namely all The sub-pixel 1003 is identification sub-pixel 1004, and the entire viewing area 1001 of the display screen 100 is able to carry out target Light identification.In another embodiment, the part sub-pixel 1003 is provided with the photoelectric sensor 70 described in formation It identifies sub-pixel 1004, the region energy of the identification sub-pixel 1004 is set in the viewing area 1001 of the display screen 100 Enough carry out target light identification.

In this application, since the photoelectric sensor 70 is set in the identification sub-pixel 1004, the sub- picture of identification Element 1004 is located in the viewing area 1001 of the display screen 100, therefore is formed by one or more photoelectric sensors 70 Fingerprint recognition mould group can be set in the viewing area 1001, the fingerprint recognition mould group is without occupying the display screen 100 1002 space of non-display area, the non-display area 1002 of the display screen 100 can reduce compared to traditional display screen, described aobvious The viewing area 1001 of display screen 100 can increase compared to traditional display screen, to improve described in the display screen 100 and application The screen accounting of the electronic equipment 1000 of display screen 100.As depicted in figs. 1 and 2, the electronic equipment 1000 and the display The screen accounting of screen 100 is larger, or even can be realized full screen display.

As shown in Fig. 2, in the identification sub-pixel 1004, the first film transistor 50 and the photoelectric sensor There are many arrangement modes for 70 position.For example, the first film transistor 50 is arranged in a left side for the identification sub-pixel 1004 Inferior horn, the photoelectric sensor 70 are located at the lower right corner, the upper left corner or the upper right corner of the identification sub-pixel 1004.

It is understood that in other embodiments, light can also be formed light letter after user's palm or iris reflex Number, light signal at this time carries the palmmprint lines information or iris lines information of user.At this point, multiple photoelectric sensors are used In the palm lines or iris lines of induction user, so that electronic equipment obtains palm lines or iris lines image, thus real Existing personal recognition or iris recognition.

It is to identify the partial circuit of sub-pixel 1004 in a kind of reality in circuit shown in Fig. 3 also referring to Fig. 3 and Fig. 4, Fig. 4 Apply the schematic diagram in mode.

The first film transistor 50 includes grid 51 (Gate, G, also referred to as gate pole), first end 52 and second end 53. In a kind of embodiment, the first end 52 of the first film transistor 50 is source electrode (Source, S), the first film crystal The second end 53 of pipe 50 is drain electrode (Drain, D).In another embodiment, the first end 52 of the first film transistor 50 is Drain electrode, the second end 53 of the first film transistor 50 are source electrode.

The photoelectric sensor 70 includes input terminal 71 and output end 72.The photoelectric sensor 70 is unidirectional device, electricity Stream is transmitted in the input terminal 71 on the direction of the output end 72.The photoelectric sensor 70 senses the target light When, the target light is converted into electric signal, the electric signal is exported by the output end 72.

In the same identification sub-pixel 1004: the grid 51 of the first film transistor 50 is electrically connected to described Grid line 10, the grid line 10 correspond to the identification sub-pixel 1004.It can be loaded on the grid line 10 and be used to open institute The signal of first film transistor 50 is stated, the first end 52 and second end 53 of the first film transistor 50 is connected.It is described The signal for closing the first film transistor 50 can be loaded on grid line 10, to disconnect the first film transistor 50 first end 52 and second end 53.

The first end 52 of the first film transistor 50 is electrically connected to the data line 20, and the data line 20 corresponds to The identification sub-pixel 1004.The second end 53 of the first film transistor 50 is electrically connected to the pixel capacitance 60.The picture When plain capacitor 60 charges, the identification sub-pixel 1004 is shown.As shown in solid arrow in Fig. 4, when the first film When transistor 50 is opened, the grayscale signal loaded on the data line 20 enters the pixel through the first film transistor 50 Capacitor 60, the pixel capacitance 60 charge, and the identification sub-pixel 1004 is shown.The display of the identification sub-pixel 1004 Circuit part includes the grid line 10, the first film transistor 50, the data line 20 and the pixel capacitance 60.Its In, the pixel capacitance 60 is including pixel electrode 61, public electrode 62 and is located at the pixel electrode 61 and the public electrode Medium (namely liquid crystal layer 63) between 62.The pixel electrode 61 is connected to the second end of the first film transistor 50 53.The public electrode 62 is connected to the public electrode wire (not shown) of the display screen 100.Ash is loaded on the data line 20 Rank signal, when loading common voltage on the public electrode wire, the both ends of the pixel capacitance 60 form pressure difference, the pixel electricity Hold 60 to charge and shown.

The display screen 100 further includes a plurality of driving line 80.The a plurality of driving line 80 is electrically connected the gate driving electricity Road 30 or the data drive circuit 40.In Fig. 3 by taking a plurality of driving line 80 is electrically connected the data drive circuit 40 as an example Illustrated.Wherein, a plurality of driving line 80 is connected to the data drive circuit 40 after can summarizing to a bus, with It realizes while driving.In other embodiments, a plurality of driving line 80 can also be respectively connected to the data drive circuit 40, To realize separately driving, such as drive line by line.

The input terminal 71 of the photoelectric sensor 70 is electrically connected the driving line 80.The output end of the photoelectric sensor 70 72 are electrically connected to the second end 53 of the first film transistor 50.As shown in dotted arrow in Fig. 4, when on the driving line 80 Load driver signal, and when the opening of the first film transistor 50, the photoelectric sensor 70 can be according to the target received Light is converted into electric signal, and the electric signal is exported by the data line 20.The display screen 100 passes through the electric signal Identify the finger print of user.The identification circuit part of the identification sub-pixel 1004 includes the grid line 10, described first Thin film transistor (TFT) 50, the driving line 80, the photoelectric sensor 70 and the data line 20.

In this application, the grid described in display circuit part and identification circuit fractional reuse of identification sub-pixel 1004 Line 10, the first film transistor 50 and the data line 20, with the circuit of the simplification identification sub-pixel 1004, so that institute The circuit structure for stating identification sub-pixel 1004 is relatively simple, and cost is relatively low.

Referring to Figure 4 together and Fig. 5, Fig. 5 are the circuits of identification sub-pixel 1004 shown in Fig. 4 in a kind of use state Driver' s timing figure.Wherein, the change of signal in grid line 10 corresponding to one of identification sub-pixel 1004 is illustrated in Fig. 5 Change situation, the variation feelings for driving the situation of change of signal in line 80, the signal exported in data line 20 by data drive circuit 40 The situation of change (such as 202 of electric signal is formed by condition (as shown at 201) and data line 20 by the photoelectric sensor 70 It is shown).

One frame time of the display screen 100 includes display time interval and identification period.The display time interval and the identification The length of period can be configured according to demand.

In the display time interval, the grid line 10 is for loading the first signal to open the first film transistor 50, the data line 20 is for loading gray scale voltage and being transmitted to the pixel capacitance 60, so that the identification sub-pixel 1004 It is shown.The first film transistor 50 can be N-type or p-type.The application is N-type with the first film transistor 50 For be illustrated, then open the first film transistor 50 first signal be high level signal.

In the identification period, the grid line 10 is for loading second signal (such as high level signal) to open First film transistor 50 is stated, the driving line 80 is for load driver signal and is transmitted to the photoelectric sensor 70, so that The photoelectric sensor 70 forms electric signal according to the target light and is exported by the data line 20.

In a kind of embodiment, the driving signal in the identification period is pulse signal.The arteries and veins of the electric signal The variation of the target light out is fed back in the variation for rushing amplitude.The controller 200 receives the electric signal, and according to the electricity User fingerprints information entrained by optical signal described in signal acquisition, to form the fingerprint image of user.

In this application, the timesharing load driver signal on the grid line 10, makes the knowledge in the display time interval Small pin for the case pixel 1004 is shown, the identification sub-pixel 1004 is made to carry out fingerprint recognition, therefore institute in the identification period Display function and identification function can be taken into account by stating display screen 100, to improve the usage experience of user.

Referring to Figure 6 together and Fig. 7, Fig. 6 are to identify the partial circuit of sub-pixel 1004 in another kind in circuit shown in Fig. 3 Schematic diagram in embodiment, Fig. 7 are a kind of driver' s timing of the circuit of identification sub-pixel 1004 shown in Fig. 6 in use state Figure.Wherein, grid line 10, control line 110, data line corresponding to one of identification sub-pixel 1004 are illustrated in Fig. 7 20 and driving line 80 in signal intensity situation.

The second thin film transistor (TFT) 90 is additionally provided in the identification sub-pixel 1004.Second thin film transistor (TFT) 90 includes grid Pole 91, first end 92 and second end 93.The first end 92 of second thin film transistor (TFT) 90 connects the first film transistor 50 second end 53.The second end 93 of second thin film transistor (TFT) 90 connects the pixel capacitance 60.Second film is brilliant The grid 91 of body pipe 90 is used to receive control signal by control line 110.The control line 110 is electrically connected the gate driving electricity Road 30 or the data drive circuit 40.Herein described control line 110 carries out for being electrically connected the data drive circuit 40 Explanation.In the display time interval, the control signal opens second thin film transistor (TFT) 90.In the identification period, Second thin film transistor (TFT) 90 described in the control signal-off.For example, second thin film transistor (TFT) 90 is N-type, the control Signal is high level signal in the display time interval, is low level signal in the identification period.

In the present embodiment, the display screen 100 controls second thin film transistor (TFT) 90 by the control signal Switch state, to make the pixel capacitance 60 connect the first film transistor 50 in the display time interval, in institute It states the relatively described first film transistor 50 in the identification period to disconnect, so that the identification sub-pixel 1004 is in the display screen Display is realized in 100 frame time.

It is understood that when in the display screen 100 including the sub-pixel 1003 of non-identifying sub-pixel 1004, The sub-pixel 1003 can be set in the driving method of display time interval with reference to the display time interval of the identification sub-pixel 1004 Meter；The sub-pixel 1003 can not drive in the identification period.

In this application, the structure of the display screen 100 has in numerous embodiments, such as:

In the first embodiment:

It is the structure of display screen 100 provided by the present application in the first embodiment also referring to Fig. 8 to Figure 10, Fig. 8 Schematic diagram, Fig. 9 are the schematic diagram of the part-structure of the array substrate 1 of display screen 100 shown in Fig. 8 in one embodiment, Figure 10 It is the decomposition texture schematic diagram of structure shown in Fig. 9.

To simplify the explanation, the present embodiment is omitted the components such as shared wiring that may be present, storage capacitance, however ability Field technique personnel should be able to judge according to state of the art the component that those are omitted position and existing necessity, therefore It repeats no more.

The display screen 100 includes array substrate 1, color membrane substrates 2, liquid crystal layer 63 and backlight module 3.The array substrate 1 is oppositely arranged with the color membrane substrates 2.The liquid crystal layer 63 is between the color membrane substrates 2 and the array substrate 1.Institute It states backlight module 3 and is located at side of the array substrate 1 far from the color membrane substrates 2, the backlight module 3 is used to be described aobvious Display screen 100 provides backlight.Meanwhile user's finger touches the identification sub-pixel 1004 (refering to Fig. 2) or is located at the identification When 1004 top of sub-pixel, the backlight light that the backlight module 3 projects forms the target light after being reflected by user's finger, The target light carries the finger print information of user, and the target light is able to enter the identification sub-pixel 1004, so that institute The photoelectric sensor 70 stated in identification sub-pixel 1004 forms corresponding electric signal, the electronics according to the target light Equipment 1000 is able to identify user fingerprints according to the electric signal.The display screen 100 may also include cover board 4, the cover board 4 In side of the color membrane substrates 2 far from the array substrate 1.The cover board 4 can be glass cover-plate.

It is understood that the display screen 100 has a display surface, two adjacent grid lines in the application 10 and the projection on the display surface of adjacent two data lines 20 for intersecting with it limit a sub-pixel jointly and throw Shadow zone domain, projection of all parts of the display screen 100 on the display surface are fallen into the sub-pixel view field The sub-pixel 1003 is collectively formed in part.Each sub-pixel 1003 of the display screen 100 includes being located at corresponding region The interior part array substrate 1, the part color membrane substrates 2 and the part liquid crystal layer 63.

The array substrate 1 is equipped with the first film transistor 50 and the photoelectric sensor 70.The first film Transistor 50 and the setting of 70 same layer of the photoelectric sensor.Due to the first film transistor 50 and the photoelectric sensor 70 Same layer setting, therefore the first film transistor 50 and the photoelectric sensor 70 can be multiplexed the thickness of the array substrate 1 Space is spent, to reduce the integral thickness of the display screen 100.

Referring to Fig. 9, the array substrate 1 includes grid 51, the grid of first base material 11, the first film transistor 50 Pole insulating layer 12, the semiconductor layer 54 of the first film transistor 50, the first film transistor 50 52 and of first end Second end 53, the output end 72 of the photoelectric sensor 70, interlayer dielectric layer 13, the photoelectric sensor 70 photosensitive layer 73 and The input terminal 71 of the photoelectric sensor 70.

The grid 51 of the first film transistor 50 is located on the first surface 111 of the first base material 11.The grid Pole insulating layer 12 is located on the first surface 111 and the grid 51 of the covering first film transistor 50.Described first is thin The semiconductor layer 54 of film transistor 50 is located on surface 121 of the gate insulating layer 12 far from the first base material 11.It is described Projection of the semiconductor layer 54 of first film transistor 50 on the first surface 111 can cover the first film crystal Projection of the grid 51 of pipe 50 on the first surface 111.The first end 52 and second end of the first film transistor 50 53 are located on surface 121 of the gate insulating layer 12 far from the first base material 11, and the first film transistor 50 First end 52 and second end 53 are separately connected the both ends of the semiconductor layer 54 of the first film transistor 50.The photoelectric sensing The output end 72 of device 70 is located on surface 121 of the gate insulating layer 12 far from the first base material 11, and the photoelectric transfer The output end 72 of sensor 70 connects the second end 53 of the first film transistor 50.The interlayer dielectric layer 13 is located at the grid Side of the pole insulating layer 12 far from the first base material 11, and cover the semiconductor layer 54 of the first film transistor 50, the The output end 72 of one end 52, second end 53 and the photoelectric sensor 70.The interlayer dielectric layer 13 is insulating layer.The layer Between dielectric layer 13 be equipped with first through hole 131, the output end 72 of photoelectric sensor 70 described in 131 face of first through hole.Change speech It, the first through hole 131 exposes the output end 72 of the photoelectric sensor 70.The photosensitive layer 73 of the photoelectric sensor 70 It is partly or entirely filled in the first through hole 131 and connects the output end 72 of the photoelectric sensor 70.The photoelectric sensing The input terminal 71 of device 70 is located at surface 132 of the interlayer dielectric layer 13 far from the gate insulating layer 12 and the covering photoelectricity The photosensitive layer 73 of sensor 70.

In the present embodiment, portion's layered structure in the first film transistor 50 and the photoelectric sensor 70 Portion's layered structure can share the preparation process with along with, with the manufacture craft of the simplification array substrate 1, improve the array base The producing efficiency of plate 1.

Optionally, the first end 52 of the first film transistor 50 and second end 53 and the photoelectric sensor 70 is defeated Outlet 72 passes through the etch process with along with and shapes.In other words, the second end 53 of the first film transistor 50 and the photoelectricity The output end 72 of sensor 70 is integrally formed.It, can be first in the gate insulating layer 12 far from the first base material 11 when production Side is laid with complete conductive material layer, is then etched to the conductive material layer, once to form the first film The first end 52 and second end 53 of transistor 50 and the output end 72 of the photoelectric sensor 70.

Optionally, the target light that the photoelectric sensor 70 is identified can be visible light or black light.Institute Target light is stated when can be for visible light, the backlight light that the backlight module 3 issues is visible light.The target light can be with When for black light, the backlight light that the backlight module 3 issues includes visible light and black light.

For example, the target light is visible light, the hair when photosensitive layer 73 of the photoelectric sensor 70 senses visible light Third contact of a total solar or lunar eclipse electrical effect.For example, Silicon-rich compound, including but not limited to Silicon-rich oxygen can be used in the photosensitive layer 73 of the photoelectric sensor 70 SiClx (SiOx), silicon-rich silicon nitride (SiNy), silicon-rich silicon oxy-nitride (SiOxNy) etc..The input terminal 71 of the photoelectric sensor 70 Using transparent conductive material.Transparent conductive material can be but be not limited to tin indium oxide (Indium tin oxide, ITO).Mesh It marks light and passes through the input terminal 71 of the photoelectric sensor 70 into the photosensitive layer 73 of the photoelectric sensor 70.

Wherein, it needs to be arranged in the side towards the backlight module 3 of the photosensitive layer 73 of the photoelectric sensor 70 and hide Photosphere.There are many implementations for the setting of light shield layer, such as:

Also referring to Fig. 9 and Figure 10, the output end 72 of the photoelectric sensor 70 uses light-shielding conductive material.The light The photosensitive layer 73 that projection of the output end 72 of electric transducer 70 on the first surface 111 covers the photoelectric sensor 70 exists Projection on the first surface 111.At this point, the output end 72 of the photoelectric sensor 70 can be used as light shield layer, the light Knowledge of the backlight light that the output end 72 of electric transducer 70 can prevent the backlight module 3 from projecting to the photoelectric sensor 70 It does not interfere.

Alternatively, please referring to Figure 11, Figure 11 is the part-structure of the array substrate 1 of display screen 100 shown in Fig. 8 another real Apply the schematic diagram in example.The array substrate 1 further includes conducting wire 17.The conducting wire 17 is located at described the of the first base material 11 On one surface 111.The conducting wire 17 uses light screening material.Projection of the conducting wire 17 on the first surface 111 covers institute State projection of the photosensitive layer 73 of photoelectric sensor 70 on the first surface 111.The conducting wire 17 can prevent the backlight The backlight light that mould group 3 projects interferes the identification of the photoelectric sensor 70.At this point, the conducting wire 17 can be used as screening The output end 72 of photosphere, the photoelectric sensor 70 can be made of transparent conductive material or opaque conductive material.It is described Conducting wire 17 can be the cabling for being used for transmission other signals.The conducting wire 17 can be located on the same floor with the grid 51, by same One of etch process is formed.

In other embodiments, the target light is black light, and the photosensitive layer 73 of the photoelectric sensor 70 is felt Photoelectric effect occurs when should arrive black light.For example, the target light can for infrared light, near infrared light, ultraviolet light or into Ultraviolet light.The material of the photosensitive layer 73 of the photoelectric sensor 70 can be vulcanized lead (PbS) etc. to infrared ray or near infrared ray With special corresponding material, or indium tin zinc oxide (ITZO) or indium gallium zinc oxide (IGZO) etc. to ultraviolet light or Near ultraviolet ray has the semiconductor material of response.

Also referring to Fig. 9 and Figure 10, in a kind of embodiment, the second through-hole 133 is additionally provided on the interlayer dielectric layer 13. The first end 52 of first film transistor 50 described in second through-hole, 133 face.Second through-hole 133 exposes part institute State the first end 52 of first film transistor 50.The array substrate 1 further includes first electrode 14.The first electrode 14 is located at Surface 132 of the interlayer dielectric layer 13 far from the gate insulating layer 12, and described the is connected by second through-hole 133 The first end 52 of one thin film transistor (TFT) 50.The first electrode 14 is connected to the data line 20.The first electrode 14 and institute State photoelectric sensor 70 input terminal 71 can by with along with etch process shape.Optionally, the data line 20 can be with 14 same layer of the first electrode setting, and pass through the etch process forming with along with.

In other embodiments, the data line 20 can be set with 52 same layer of first end of the first film transistor 50 It sets.The data line 20 is directly connected to the first end 52 of the first film transistor 50.The data line 20 can with it is described The first end 52 of first film transistor 50 passes through the etch process with along with and shapes.Compared to previous embodiment, in the present embodiment In, the array substrate 1 no setting is required the first electrode 14 and second through-hole 133 simplifies the array substrate 1 Structure.

Also referring to Fig. 9 and Figure 10, in a kind of embodiment, third through-hole 134 is additionally provided on the interlayer dielectric layer 13. The second end 53 of first film transistor 50 described in 134 face of third through-hole.The third through-hole 134 exposes part institute State the second end 53 of first film transistor 50.The array substrate 1 further includes second electrode 15, and the second electrode 15 is located at Surface 132 of the interlayer dielectric layer 13 far from the gate insulating layer 12, and described the is connected by the third through-hole 134 The second end 53 of one thin film transistor (TFT) 50.The input terminal 71 of the second electrode 15 and the photoelectric sensor 70 can be by same One of etch process forming.The second electrode 15 is connected to the pixel capacitance 60.

Figure 12 is please referred to, Figure 12 is the another part of the array substrate 1 of display screen 100 shown in Fig. 8 in one embodiment The schematic diagram of structure.Structure shown in Figure 12 can be combined with structure shown in Fig. 8, can also be combined with structure shown in Figure 11.

The second thin film transistor (TFT) 90 is additionally provided in the array substrate 1, specific: the array substrate 1 further includes second The grid 91 of thin film transistor (TFT) 90, the semiconductor layer 94 of second thin film transistor (TFT) 90, second thin film transistor (TFT) 90 First end 92 and second end 93 and pixel electrode 61.

The grid 91 of second thin film transistor (TFT) 90 is located on the first surface 111 of the first base material 11.Described 51 same layer of grid of the grid 91 of two thin film transistor (TFT)s 90 and the first film transistor 50 is arranged, can be by etching with along with Process forming.The gate insulating layer 12 also covers the grid 91 of second thin film transistor (TFT) 90.Second film crystal The semiconductor layer 94 of pipe 90 is located on surface 121 of the gate insulating layer 12 far from the first base material 11.Described second is thin Projection of the semiconductor layer 94 of film transistor 90 on the first surface 111 can cover second thin film transistor (TFT) 90 Projection of the grid 91 on the first surface 111.The semiconductor layer 94 of second thin film transistor (TFT) 90 and described first thin 54 same layer of semiconductor layer of film transistor 50 is arranged, can by with along with etch process shape.Second thin film transistor (TFT) 90 First end 92 and second end 93 be located on surface 121 of the gate insulating layer 12 far from the first base material 11, and it is described The first end 92 and second end 93 of second thin film transistor (TFT) 90 are separately connected the semiconductor layer 94 of second thin film transistor (TFT) 90 Both ends.The first end 92 of second thin film transistor (TFT) 90 and the first end of second end 53 and the first film transistor 50 52 and 53 same layer of second end setting, can by with along with etch process shape.

The interlayer dielectric layer 13 also covers the semiconductor layer 94 of second thin film transistor (TFT) 90, first end 92 and second End 93.The interlayer dielectric layer 13 is equipped with fifth hole 136, the second thin film transistor (TFT) 90 described in 136 face of fifth hole First end 92.The second electrode 15 is also connected to the of second thin film transistor (TFT) 90 by the fifth hole 136 One end 92.The interlayer dielectric layer 13 is additionally provided with the 6th through-hole 137, the second film crystal described in 137 face of the 6th through-hole The second end 93 of pipe 90.The pixel electrode 61 is located at surface of the interlayer dielectric layer 13 far from the gate insulating layer 12 132, and connect by the 6th through-hole 137 second end 93 of second thin film transistor (TFT) 90.The pixel electrode 61 with 15 same layer of second electrode setting, can by with along with etch process shape.

In other embodiments, the first end 92 of second thin film transistor (TFT) 90 is directly connected to the first film crystal The second end 53 of pipe 50.Compared to previous embodiment, in the present embodiment, the array substrate 1 no setting is required it is described second electricity Pole 154 and the fifth hole 136 simplify the structure of the array substrate 1.

In other embodiments, when 100 not set second thin film transistor (TFT) 90 of display screen, the pixel electricity Pole 61 is directly connected to the second electrode 15 (or second end 53 of the first film transistor 50).

It is showing for the part-structure of the color membrane substrates 2 of display screen 100 shown in Fig. 8 also referring to Figure 12 and Figure 13, Figure 13 It is intended to.The structure of color membrane substrates 2 shown in Figure 13 can be combined with the structure of array substrate 1 shown in Figure 12.

The color membrane substrates 2 include the second substrate 21, color blocking layer 22 and common electrode layer 23.The color blocking layer 22 is layered in On second substrate 21, the common electrode layer 23 is located at side of the color blocking layer 22 far from second substrate 21.Institute State public electrode 62, the pixel electrode 61 and the liquid crystal between the public electrode 62 and the pixel electrode 61 The pixel capacitance 60 is collectively formed (refering to Fig. 8) for layer 63.

Wherein, the color blocking layer 22 includes colored color blocking block and black matrix".The colour color blocking block can penetrate visible Light.The black matrix" blocks visible light.When the target light is visible light, the photosensitive layer 73 of the photoelectric sensor 70 Projection on second substrate 21 falls into the colored color blocking block in the drop shadow spread on second substrate 21.Work as institute State target light be black light when, projection of the photosensitive layer 73 of the photoelectric sensor 70 on second substrate 21 can be fallen Enter the colored color blocking block in the drop shadow spread on second substrate 21, the black matrix" can also be fallen into described second In drop shadow spread on substrate 21.

In this second embodiment:

It is the knot of display screen 100 provided by the present application in this second embodiment also referring to Figure 14 to Figure 16, Figure 14 Structure schematic diagram, Figure 15 are the structural schematic diagram of the part-structure of display screen 100 shown in Figure 14 in one embodiment, and Figure 16 is figure The decomposition texture schematic diagram of structure shown in 15.

Display screen 100 is unlike display screen 100 described in first embodiment described in present embodiment: the photoelectric transfer Sensor 70 is set on the color membrane substrates 2.To simplify the explanation, shared wiring that may be present, storage is omitted in the present embodiment The components such as capacitor, however those skilled in the art should be able to judge the position for the component that those are omitted according to state of the art With existing necessity, therefore repeat no more.

The display screen 100 includes the array substrate 1 being oppositely arranged and color membrane substrates 2.The array substrate 1 is equipped with described First film transistor 50.The color membrane substrates 2 are equipped with the photoelectric sensor 70.At this point, the photoelectric sensor 70 and institute Stating first film transistor 50 can partly overlap or all be overlapped, to be multiplexed the length and width of the display screen 100 On space, to improve the aperture opening ratio of the display screen 100.Wherein, the display screen 100 further includes liquid crystal layer 63, backlight Mould group 3 and cover board 4.

The array substrate 1 includes grid 51, the gate insulating layer of first base material 11, the first film transistor 50 12, the semiconductor layer 54 of the first film transistor 50, the first end 52 of the first film transistor 50 and second end 53, Interlayer dielectric layer 13 and third electrode 16.

The grid 51 of the first film transistor 50 is located on the first surface 111 of the first base material 11.The grid Pole insulating layer 12 is located on the first surface 111 and the grid 51 of the covering first film transistor 50.Described first is thin The semiconductor layer 54 of film transistor 50 is located on surface 121 of the gate insulating layer 12 far from the first base material 11.It is described Projection of the semiconductor layer 54 of first film transistor 50 on the first surface 111 can cover the first film crystal Projection of the grid 51 of pipe 50 on the first surface 111.The first end 52 and second end of the first film transistor 50 53 are located on surface 121 of the gate insulating layer 12 far from the first base material 11, and the first film transistor 50 First end 52 and second end 53 are separately connected the both ends of the semiconductor layer 54 of the first film transistor 50.The interlayer dielectric Layer 13 is located at side of the gate insulating layer 12 far from the first base material 11 and covers the first film transistor 50 Semiconductor layer 54, first end 52 and second end 53.The interlayer dielectric layer 13 is equipped with fourth hole 135, the fourth hole 135 The second end 53 of first film transistor 50 described in face.The third electrode 16 is located at the interlayer dielectric layer 13 far from described The surface 132 of gate insulating layer 12, and connect through the fourth hole 135 second end 53 of the first film transistor 50.

The color membrane substrates 2 include the second substrate 21, the input terminal 71 of the photoelectric sensor 70, the photoelectric sensor The output end 72 of 70 photosensitive layer 73, support column 24 and the photoelectric sensor 70.

The input terminal 71 of the photoelectric sensor 70 is located at second substrate 21 towards the side of the first base material 11. The photosensitive layer 73 of the photoelectric sensor 70 is located at the input terminal 71 of the photoelectric sensor 70 far from second substrate 21 On surface 711.The support column 24 is located at second substrate 21 towards the side of the first base material 11, and the support column Third electrode 16 described in 24 faces.The output end 72 of the photoelectric sensor 70 is located at the photosensitive layer 73 of the photoelectric sensor 70 On surface 731 far from second substrate 21, and 72 part of output end of the photoelectric sensor 70 rides upon the support On column 24, to support the third electrode 16.At this point, the photoelectric sensor 70 is electrically connected to the first film transistor 50 Second end 53.

In the present embodiment, when user identifies fingerprint, the spacing between user fingerprints and the photoelectric sensor 70 is more It is small so that loss of the target light in transmission process for carrying user fingerprints information is small, thus improve accuracy of identification and Image quality.

Wherein, when the target light is visible light, the input terminal 71 of the photoelectric sensor 70 uses electrically conducting transparent material Material.The output end 72 of the photoelectric sensor 70 uses light-shielding conductive material.The output end 72 of the photoelectric sensor 70 is in institute It states the projection on the second substrate 21 and covers projection of the photosensitive layer 73 of the photoelectric sensor 70 on second substrate 21.Or The output end 72 of person, the photoelectric sensor 70 use transparent conductive material, remote in the output end 72 of the photoelectric sensor 70 A shading piece is arranged in the side of photosensitive layer 73 from the photoelectric sensor 70, to block visible light.

When the target light is black light, the input terminal 71 of the photoelectric sensor 70 can be transparent conductive material Or opaque conductive material, the material of the output end 72 of the photoelectric sensor 70 for transparent conductive material or opaque can be led Electric material.

The material of the photosensitive layer 73 of photoelectric sensor 70 described in present embodiment is arranged refering in foregoing first embodiment The material of the photosensitive layer 73 of the photoelectric sensor 70 is arranged.

Also referring to Figure 15 and Figure 16, in a kind of embodiment, the second through-hole is additionally provided on the interlayer dielectric layer 13 133.The first end 52 of first film transistor 50 described in second through-hole, 133 face.The array substrate 1 further includes first Electrode 14.The first electrode 14 is located at surface 132 of the interlayer dielectric layer 13 far from the gate insulating layer 12, and passes through Second through-hole 133 connects the first end 52 of the first film transistor 50.The first electrode 14 is connected to the number According to line 20.The first electrode 14 and the third electrode 16 can by with along with etch process shape.Optionally, the number It can be arranged with 14 same layer of first electrode according to line 20, and pass through the etch process forming with along with.

Also referring to Figure 15 and Figure 16, in a kind of embodiment, third through-hole is additionally provided on the interlayer dielectric layer 13 134.The second end 53 of first film transistor 50 described in 134 face of third through-hole.The array substrate 1 further includes second Electrode 15.The second electrode 15 is located at surface 132 of the interlayer dielectric layer 13 far from the gate insulating layer 12, and passes through The third through-hole 134 connects the second end 53 of the first film transistor 50.The second electrode 15 is connected to the picture Plain capacitor 60.The second electrode 15 and the third electrode 16 can by with along with etch process shape.

In a kind of embodiment, also referring to Figure 15 and Figure 16, the color membrane substrates 2 further include color blocking layer 22.The color Resistance layer 22 is located at second substrate 21 towards on the second surface 211 of the first base material 11.The color blocking layer 22 includes black Colour moment battle array and colored color blocking block.

The color blocking layer 22 is equipped with the first hole 221.First hole 221 extends to the second surface 211, the photoelectricity 70 part of sensor is located in first hole 221.At this point, the distance between the photoelectric sensor 70 and user fingerprints are more Closely, be conducive to improve the recognition accuracy of user fingerprints.Also, the color blocking layer 22 will not hide the target light Gear, the target light can be visible light or black light.

Wherein, the color membrane substrates 2 further include flatness layer 25.The flatness layer 25 is located at the color blocking layer 22 far from described The side of first base material 11.The flatness layer 25 is equipped with the second hole 251.Second hole 251 is connected to first hole 221.Institute 70 part of photoelectric sensor is stated to be located in second hole 251.

The support column 24 and the flatness layer 25 can by with along with etch process shape.At this point, the array substrate 1 Preparation process it is relatively simple, advantageously reduce the cost of the array substrate 1.

The input terminal 71 of the photoelectric sensor 70 is located in first hole 221.The photoelectric sensor 70 it is photosensitive Layer 73 is located in second hole 251.The output end 72 of the photoelectric sensor 70 is located at the flatness layer 25 far from the color The side of resistance layer 22.

In another embodiment, Figure 17 is please referred to, Figure 17 is the part-structure of display screen 100 shown in Figure 14 another real Apply the structural schematic diagram in example.The present embodiment is unlike previous embodiment: the input terminal 71 of the photoelectric sensor 70 and Photosensitive layer 73 is located in first hole 221.72 part of output end of the photoelectric sensor 70 is located at second hole 251 In.Wherein, the hole wall in second hole 251 can be substantially concordant with the side of the support column 24, so that the photoelectric sensor 70 output end 72 is not easy to break in forming, improves the yields of the display screen 100.

In another embodiment, Figure 18 is please referred to, Figure 18 is the part-structure of display screen 100 shown in Figure 14 in another reality Apply the structural schematic diagram in example.The color membrane substrates 2 further include color blocking layer 22.The color blocking layer 22 is located at second substrate 21 Towards on the second surface 211 of the first base material 11.The color blocking layer 22 includes black matrix" 222 and colored color blocking block 223. The present embodiment is unlike previous embodiment: the photoelectric sensor 70 is located at the color blocking layer 22 far from second substrate 21 side.When the target light is visible light, colour color blocking block described in 73 face of photosensitive layer of the photoelectric sensor 70 223 settings.In other words, projection of the photosensitive layer 73 of the photoelectric sensor 70 on the second surface 211 falls into the coloured silk Color color blocking block 223 is in the drop shadow spread on the second surface 211.When the target light is black light, then to described Relative positional relationship between photoelectric sensor 70 and the colored color blocking block 223 and the black matrix" 222 does not limit strictly It is fixed.

It is the schematic diagram of another part structure of display screen 100 shown in Figure 14 also referring to Figure 19, Figure 19.Shown in Figure 19 Structure can be combined with structure shown in structure shown in structure, Figure 17 shown in Figure 15 and Figure 18.

The array substrate 1 further includes the second thin film transistor (TFT) 90, and specific: the array substrate 1 further includes second thin The grid 91 of film transistor 90, the semiconductor layer 94 of second thin film transistor (TFT) 90, second thin film transistor (TFT) 90 One end 92 and second end 93 and pixel electrode 61.

The grid 91 of second thin film transistor (TFT) 90 is located on the first surface 111 of the first base material 11.Described 51 same layer of grid of the grid 91 of two thin film transistor (TFT)s 90 and the first film transistor 50 is arranged, can be by etching with along with Process forming.The gate insulating layer 12 also covers the grid 91 of second thin film transistor (TFT) 90.Second film crystal The semiconductor layer 94 of pipe 90 is located on surface 121 of the gate insulating layer 12 far from the first base material 11.Described second is thin Projection of the semiconductor layer 94 of film transistor 90 on the first surface 111 can cover second thin film transistor (TFT) 90 Projection of the grid 91 on the first surface 111.The semiconductor layer 94 of second thin film transistor (TFT) 90 and described first thin 54 same layer of semiconductor layer of film transistor 50 is arranged, can by with along with etch process shape.Second thin film transistor (TFT) 90 First end 92 and second end 93 be located on surface 121 of the gate insulating layer 12 far from the first base material 11, and it is described The first end 92 and second end 93 of second thin film transistor (TFT) 90 are separately connected the semiconductor layer 94 of second thin film transistor (TFT) 90 Both ends.The first end 92 of second thin film transistor (TFT) 90 and the first end of second end 93 and the first film transistor 50 52 and 53 same layer of second end setting, can by with along with etch process shape.

The color membrane substrates 2 further include common electrode layer 23.It is separate that the common electrode layer 23 is located at the color blocking layer 22 The side of second substrate 21.The public electrode 62, the pixel electrode 61 and be located at the public electrode 62 with it is described The pixel capacitance 60 is collectively formed in the liquid crystal layer 63 between pixel electrode 61.

Figure 20 is please referred to, Figure 20 is the flow chart of the control method of a kind of electronic equipment provided by the present application.

The control method of the electronic equipment is applied to electronic equipment 1000 (please referring to Fig. 1 to Figure 19) described previously.

The electronic equipment 1000 includes controller 200 and display screen 100, a plurality of grid line 10 of the display screen 100, more Data line 20 and a plurality of driving line 80.The a plurality of grid line 10 is arranged and is formed with 20 transposition insulator of multiple data lines Multiple sub-pixels 1003 of array arrangement.First film transistor 50 and pixel capacitance 60 are equipped in each sub-pixel 1003. Photoelectric sensor 70, which is equipped with, in the part or all of sub-pixel 1003 identifies sub-pixel 1004 to be formed.

In the same identification sub-pixel 1004, the first film transistor 50 includes grid 51, first end 52 And second end 53, the grid 51 of the first film transistor 50 are electrically connected to the grid line 10, the first film crystal The first end 52 of pipe 50 is electrically connected to the data line 20, and the second end 53 of the first film transistor 50 is electrically connected to described Pixel capacitance 60, the input terminal 71 of the photoelectric sensor 70 are electrically connected the driving line 80, the photoelectric sensor 70 it is defeated Outlet 72 is electrically connected to the second end 53 of the first film transistor 50, and the photoelectric sensor 70 carries user for identification The target light of finger print information.

One frame time of the display screen 100 includes display time interval and identification period.

The control method of the electronic equipment includes:

001: in the display time interval of the display screen 100, the controller 200 loads first on the grid line 10 To open the first film transistor 50, the controller 200 loads gray scale voltage on the data line 20 and passes signal The pixel capacitance 60 is transported to, so that the identification sub-pixel 1004 is shown；

003: in the identification period of the display screen 100, the controller 200 loads second on the grid line 10 To open the first film transistor 50, the controller 200 load driver signal and passes signal on the driving line 80 The photoelectric sensor 70 is transported to, so that the photoelectric sensor 70 forms electric signal according to the target light and passes through described Data line 20 exports.

Optionally, the second thin film transistor (TFT) 90 is additionally provided in the identification sub-pixel 1004.Second thin film transistor (TFT) 90 include grid 91, first end 92 and second end 93.It is thin that the first end 92 of second thin film transistor (TFT) 90 connects described first The second end 53 of film transistor 50.The second end 93 of second thin film transistor (TFT) 90 connects the pixel capacitance 60.Described The grid 91 of two thin film transistor (TFT)s 90 is electrically connected to control line 110.

The control method of the electronic equipment further include:

In the display time interval of the display screen 100, it is brilliant can to open second film for load on the control line 110 The control signal of body pipe 90, so that the gray scale voltage is transmitted to the pixel capacitance 60 through second thin film transistor (TFT) 90；

In the identification period of the display screen 100, it is brilliant can to close second film for load on the control line 110 The control signal of body pipe 90, to disconnect the pixel capacitance 60 and the first film transistor 50.

In the present embodiment, the display screen 100 controls the switch of the second transistor by the control signal State, to make the pixel capacitance 60 connect the first film transistor 50 in the display time interval, in the identification The relatively described first film transistor 50 disconnects in period, so that the identification sub-pixel 1004 is the one of the display screen 100 Display is realized in frame time.

The embodiment of the present application is described in detail above, specific case used herein to the principle of the application and Embodiment is expounded, the description of the example is only used to help understand the method for the present application and its core ideas； In the absence of conflict, the feature in presently filed embodiment and embodiment can be combined with each other；Meanwhile for ability The those skilled in the art in domain, according to the thought of the application, there will be changes in the specific implementation manner and application range, comprehensive Upper described, the contents of this specification should not be construed as limiting the present application.

Claims

1. a kind of display screen, which is characterized in that including a plurality of grid line, multiple data lines and a plurality of driving line, a plurality of grid Polar curve and the multiple data lines transposition insulator arrange and form multiple sub-pixels of array arrangement, are equipped in each sub-pixel First film transistor and pixel capacitance are equipped with photoelectric sensor partly or entirely to form the sub- picture of identification in the sub-pixel Element；

In the same identification sub-pixel, the first film transistor includes grid, first end and second end, and described The grid of one thin film transistor (TFT) is electrically connected to the grid line, and the first end of the first film transistor is electrically connected to the number According to line, the second end of the first film transistor is electrically connected to the pixel capacitance, the input terminal electricity of the photoelectric sensor The driving line is connected, the output end of the photoelectric sensor is electrically connected to the second end of the first film transistor, described Photoelectric sensor carries the target light of user fingerprints information for identification.

2. display screen as described in claim 1, which is characterized in that a frame time of the display screen includes display time interval and knowledge The other period；

In the display time interval, the grid line for load the first signal to open the first film transistor, it is described Data line is for loading gray scale voltage and being transmitted to the pixel capacitance, so that the identification sub-pixel is shown；

In the identification period, the grid line is used to load second signal to open the first film transistor, described Driving line is for load driver signal and is transmitted to the photoelectric sensor, so that the photoelectric sensor is according to the target light Line forms electric signal and is exported by the data line.

3. display screen as claimed in claim 2, which is characterized in that be additionally provided with the second film crystal in the identification sub-pixel Pipe, second thin film transistor (TFT) include grid, first end and second end, and the first end of second thin film transistor (TFT) connects institute State the second end of first film transistor, the second end of second thin film transistor (TFT) connects the pixel capacitance, and described second The grid of thin film transistor (TFT) is used to receive control signal by control line, and in the display time interval, the control signal is opened Second thin film transistor (TFT), in the identification period, the second thin film transistor (TFT) described in the control signal-off.

4. display screen as claimed in claim 3, which is characterized in that the display screen further includes that gate driving circuit and data are driven Dynamic circuit, a plurality of grid line are electrically connected the gate driving circuit, and the multiple data lines are electrically connected the data-driven Circuit, the driving line are electrically connected the gate driving circuit or the data drive circuit, described in the control line electrical connection Data drive circuit or the data drive circuit.

5. the display screen as described in any one of Claims 1-4, which is characterized in that the display screen includes array substrate, The array substrate is equipped with the first film transistor and the photoelectric sensor, the first film transistor and the light The setting of electric transducer same layer.

6. display screen as claimed in claim 5, which is characterized in that the array substrate includes:

First base material；

The grid of the first film transistor, on the first surface of the first base material；

Gate insulating layer, on the first surface and the grid of the covering first film transistor；

The semiconductor layer of the first film transistor, on surface of the gate insulating layer far from the first base material, The projection of the semiconductor layer of the first film transistor on the first surface covers the grid of the first film transistor The projection of pole on the first surface；

The first end and second end of the first film transistor, the table positioned at the gate insulating layer far from the first base material On face, and the first end and second end of the first film transistor is separately connected the semiconductor layer of the first film transistor Both ends；

The output end of the photoelectric sensor, on surface of the gate insulating layer far from the first base material, and it is described The output end of photoelectric sensor connects the second end of the first film transistor；

Interlayer dielectric layer, side and the covering the first film crystal positioned at the gate insulating layer far from the first base material The semiconductor layer of pipe, first end, second end and the photoelectric sensor output end, it is logical that the interlayer dielectric layer is equipped with first Hole, the output end of photoelectric sensor described in the first through hole face；

The photosensitive layer of the photoelectric sensor is partly or entirely filled in the first through hole and connects the photoelectric sensor Output end；And

The input terminal of the photoelectric sensor, surface and covering institute positioned at the interlayer dielectric layer far from the gate insulating layer State the photosensitive layer of electric transducer.

7. display screen as claimed in claim 6, which is characterized in that the first end and second end of the first film transistor and The output end of the photoelectric sensor passes through the etch process with along with and shapes.

8. display screen as claimed in claim 6, which is characterized in that the target light is visible light, the photoelectric sensor Photosensitive layer photoelectric effect occurs when sensing the visible light, the input terminal of the photoelectric sensor uses electrically conducting transparent material Material.

9. display screen as claimed in claim 8, which is characterized in that the output end of the photoelectric sensor uses light-shielding conductive material Material, the projection of the output end of the photoelectric sensor on the first surface cover the photosensitive layer of the electric transducer described Projection on first surface.

10. display screen as claimed in claim 8, which is characterized in that the array substrate further includes conducting wire, and the conducting wire is located at On the first surface, the conducting wire uses light screening material, and the projection of the conducting wire on the first surface covers the electricity The projection of the photosensitive layer of sensor on the first surface.

11. display screen as claimed in claim 6, which is characterized in that the second through-hole is additionally provided on the interlayer dielectric layer, it is described The first end of first film transistor described in second through-hole face, the array substrate further include first electrode, first electricity Pole is located at surface of the interlayer dielectric layer far from the gate insulating layer, and thin by second through-hole connection described first The first end of film transistor, the first electrode are connected to the data line.

12. the display screen as described in any one of claim 6 to 11, which is characterized in that also set on the interlayer dielectric layer There is third through-hole, the second end of first film transistor described in the third through-hole face, the array substrate further includes second Electrode, the second electrode are located at surface of the interlayer dielectric layer far from the gate insulating layer, and logical by the third Hole connects the second end of the first film transistor, and the second electrode is connected to the pixel capacitance.

13. the display screen as described in any one of Claims 1-4, which is characterized in that the display screen includes being oppositely arranged Array substrate and color membrane substrates, the array substrate be equipped with the first film transistor, the color membrane substrates are equipped with described Photoelectric sensor.

14. display screen as claimed in claim 13, which is characterized in that

The array substrate includes:

First base material；

Interlayer dielectric layer, side and the covering the first film crystal positioned at the gate insulating layer far from the first base material Semiconductor layer, first end and the second end of pipe, the interlayer dielectric layer are equipped with fourth hole, the described in the fourth hole face The second end of one thin film transistor (TFT)；

Third electrode, the surface positioned at the interlayer dielectric layer far from the gate insulating layer, and connected through the fourth hole The second end of the first film transistor；

The color membrane substrates include:

Second substrate；

The input terminal of the photoelectric sensor, positioned at second substrate towards the side of the first base material；

The photosensitive layer of the photoelectric sensor, the input terminal positioned at the photoelectric sensor is far from the surface of second substrate On；

Support column, positioned at second substrate towards the side of the first base material, and third electrode described in face；And

The output end of the photoelectric sensor, the photosensitive layer positioned at the photoelectric sensor is far from the surface of second substrate On, and the outlet end part of the photoelectric sensor rides upon on the support column, to support the third electrode.

15. display screen as claimed in claim 14, which is characterized in that the input terminal of the photoelectric sensor uses electrically conducting transparent The output end of material, the photoelectric sensor uses light-shielding conductive material, and the output end of the photoelectric sensor is described second Projection on substrate covers projection of the photosensitive layer of the electric transducer on second substrate.

16. display screen as claimed in claim 15, which is characterized in that the color membrane substrates further include color blocking layer, the color blocking Layer is located at second substrate towards on the second surface of the first base material, and the color blocking layer is equipped with the first hole, and described first Hole extends to the second surface, and the photosensor part is located in first hole.

17. display screen as claimed in claim 16, which is characterized in that the color membrane substrates further include flatness layer, described flat Layer is located at side of the color blocking layer far from the first base material, and the flatness layer is equipped with the second hole, and second hole is connected to institute The first hole is stated, the photosensor part is located in second hole.

18. display screen as claimed in claim 17, which is characterized in that the input terminal of the photoelectric sensor is located at described first The output end of Kong Zhong, the photoelectric sensor are located in second hole, and the output end of the photoelectric sensor is located at described flat Side of the smooth layer far from the color blocking layer.

19. display screen as claimed in claim 17, which is characterized in that the input terminal and photosensitive layer of the photoelectric sensor are located at In first hole, the outlet end part of the photoelectric sensor is located in second hole.

20. the display screen as described in any one of claim 17 to 19, which is characterized in that the support column and described flat Layer passes through the etch process forming with along with.

21. display screen as claimed in claim 14, which is characterized in that the color membrane substrates further include color blocking layer, the color blocking Layer is located at second substrate towards on the second surface of the first base material, and the color blocking layer includes black matrix" and colored color Stop block, the photoelectric sensor are located at side of the color blocking layer far from second substrate, and the target light is visible light When, the setting of colour color blocking block described in the photosensitive layer face of the photoelectric sensor.

22. display screen as claimed in claim 14, which is characterized in that be additionally provided with the second through-hole, institute on the interlayer dielectric layer The first end of first film transistor described in the second through-hole face is stated, the array substrate further includes first electrode, and described first Electrode is located at surface of the interlayer dielectric layer far from the gate insulating layer, and passes through second through-hole connection described first The first end of thin film transistor (TFT), the first electrode are connected to the data line.

23. the display screen as described in claim 14 or 22, which is characterized in that it is logical to be additionally provided with third on the interlayer dielectric layer Hole, the second end of first film transistor described in the third through-hole face, the array substrate further includes second electrode, described Second electrode is located at surface of the interlayer dielectric layer far from the gate insulating layer, and by described in third through-hole connection The second end of first film transistor, the second electrode are connected to the pixel capacitance.

24. a kind of electronic equipment, which is characterized in that including display screen described in any one of controller and claim 1 to 23, The controller is electrically connected the display screen.

25. the control method of a kind of electronic equipment, which is characterized in that the electronic equipment includes controller and display screen, described The a plurality of grid line of display screen, multiple data lines and a plurality of driving line, a plurality of grid line intersect absolutely with the multiple data lines Edge arranges and forms multiple sub-pixels of array arrangement, is equipped with first film transistor and pixel capacitance in each sub-pixel, Photoelectric sensor is equipped in the part or all of sub-pixel to form identification sub-pixel；

In the same identification sub-pixel, the first film transistor includes grid, first end and second end, and described The grid of one thin film transistor (TFT) is electrically connected to the grid line, and the first end of the first film transistor is electrically connected to the number According to line, the second end of the first film transistor is electrically connected to the pixel capacitance, the input terminal electricity of the photoelectric sensor The driving line is connected, the output end of the photoelectric sensor is electrically connected to the second end of the first film transistor, described Photoelectric sensor carries the target light of user fingerprints information for identification；

The control method of the electronic equipment includes:

In the display time interval of the display screen, the controller loads the first signal on the grid line to open described One thin film transistor (TFT), the controller loads gray scale voltage on the data line and is transmitted to the pixel capacitance, so that institute Identification sub-pixel is stated to be shown；

In the identification period of the display screen, the controller loads second signal on the grid line to open described One thin film transistor (TFT), the controller load driver signal and are transmitted to the photoelectric sensor on the driving line, so that The photoelectric sensor forms electric signal according to the target light and is exported by the data line.

26. the control method of electronic equipment as claimed in claim 25, which is characterized in that be additionally provided in the identification sub-pixel Second thin film transistor (TFT), second thin film transistor (TFT) include grid, first end and second end, second thin film transistor (TFT) First end connects the second end of the first film transistor, and the second end of second thin film transistor (TFT) connects the pixel electricity Holding, the grid of second thin film transistor (TFT) is electrically connected to control line,

The control method of the electronic equipment further include:

In the display time interval of the display screen, load can open the control of second thin film transistor (TFT) on the control line Signal, so that the gray scale voltage is transmitted to the pixel capacitance through second thin film transistor (TFT)；

In the identification period of the display screen, load can close the control of second thin film transistor (TFT) on the control line Signal, to disconnect the pixel capacitance and the first film transistor.