WO2020133446A1 - Array substrate, display panel, and display device - Google Patents

Array substrate, display panel, and display device Download PDF

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Publication number
WO2020133446A1
WO2020133446A1 PCT/CN2018/125720 CN2018125720W WO2020133446A1 WO 2020133446 A1 WO2020133446 A1 WO 2020133446A1 CN 2018125720 W CN2018125720 W CN 2018125720W WO 2020133446 A1 WO2020133446 A1 WO 2020133446A1
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WO
WIPO (PCT)
Prior art keywords
gate
lines
display area
transistor
array substrate
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Application number
PCT/CN2018/125720
Other languages
French (fr)
Chinese (zh)
Inventor
周黎斌
任竹运
倪杰
Original Assignee
深圳市柔宇科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 深圳市柔宇科技有限公司 filed Critical 深圳市柔宇科技有限公司
Priority to CN201880095908.1A priority Critical patent/CN112703600A/en
Priority to PCT/CN2018/125720 priority patent/WO2020133446A1/en
Publication of WO2020133446A1 publication Critical patent/WO2020133446A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

Definitions

  • the present application relates to the field of display technology, and in particular, to an array substrate, a display panel using the array substrate, and a display device.
  • thin-film transistors In Organic Light-Emitting Diode (OLED) display technology, thin-film transistors (Thin Film Transistor, TFT) can be used to drive and control the organic light-emitting layer in the OLED display panel, thereby achieving light-emitting display.
  • TFT Thin Film Transistor
  • data lines, gate lines, and power lines are required to provide electrical signal support.
  • other auxiliary circuit structures such as a logic control circuit structure and a flip-chip thin film structure, are also required.
  • the connection of these circuit structures to the thin-film transistors will complicate the arrangement of the connecting conductive lines of the display panel and increase the arrangement area, which is not conducive to the narrow and narrow design of the display panel.
  • the present application proposes an array substrate, a display panel and a display device using the array substrate, aiming to improve the arrangement structure of the connecting electrical wires of the array substrate, so as to facilitate the narrow design of the display panel frame.
  • an array substrate including:
  • a substrate having a display area and a non-display area outside the display area
  • a plurality of gate lines are arranged in the display area and are arranged in rows at intervals;
  • a plurality of data lines are arranged in the display area and are arranged in columns at intervals.
  • the plurality of data lines are perpendicular to the plurality of gate lines and do not intersect each other.
  • the plurality of gate lines and the plurality of data The lines together define the display area;
  • An electric transmission layer is disposed in the display area, the electric transmission layer includes a plurality of gate guide lines, and the plurality of gate guide lines are electrically connected to the plurality of gate lines, respectively, so that the plurality of The gate lines are electrically connected to the external control circuit through the plurality of gate guide lines, and the plurality of gate guide lines and the plurality of data lines are drawn from the same side of the display area to the non-display area To be electrically connected to the external control circuit.
  • the array substrate further includes a plurality of power lines disposed in the display area
  • the electrical transmission layer further includes a power guide line for electrically connecting the power line and the external control circuit
  • the power supply guide line is provided in the display area, and is drawn from the same side of the display area as the plurality of gate guide lines and the plurality of data lines to be electrically connected to the external control circuit.
  • the power guide wire is arranged in a grid shape.
  • the power supply guide line includes two parts, the portion of the power supply guide line located in the area where the gate guide line is not provided is grid-shaped, and the power supply guide line is located on the position provided with the gate guide The part of the line area is in the form of a strip.
  • the plurality of gate guide lines are distributed in a stripe structure at intervals, and the plurality of gate guide lines are parallel to the plurality of data lines and are not coplanar.
  • the lengths of the plurality of gate guide lines are not uniformly set, and the long gate guide line is wider than the short gate guide line.
  • the plurality of gate guide lines are arranged in order of length.
  • the shortest of the plurality of gate guide lines is located in the center of the display area, and the gate guide lines arranged from the center of the display area to both sides are longer and longer.
  • it further includes a plurality of thin film transistor units and a plurality of power supply lines, the plurality of thin film transistor units are arranged in a matrix in the display area, two adjacent gate lines and two adjacent A region surrounded by the data lines defines a pixel unit, each of the thin film transistor units corresponds to a pixel unit, and each of the thin film transistor units is associated with a corresponding gate line and a The data line and the power line are electrically connected.
  • the electrical transmission layer is formed on the surface of the substrate, the first insulating layer is formed on a side of the electrical transmission layer away from the substrate, the plurality of thin film transistors The cell is formed on a side of the first insulating layer away from the electric transmission layer, so that the first insulating layer insulates the electric transmission layer and the plurality of thin film transistor units from each other.
  • each of the thin film transistor units includes a first transistor and a second transistor; the gate of each first transistor is electrically connected to an adjacent one of the gate lines, and the source is adjacent to One of the data lines is electrically connected, and the drain is electrically connected to the gate of the second transistor in the same thin film transistor unit; the source of each second transistor is electrically connected to a power line , The drain is used to connect with an organic light emitting unit.
  • a second insulating layer, a third insulating layer, and a protective layer are also included.
  • the gate of the first transistor and the gate of the second transistor are isolated from each other and disposed on the first insulating layer away from the electrical
  • the second insulating layer covers the gate of the first transistor, the gate of the second transistor, and the side of the first insulating layer away from the substrate, the first The channel layer of the transistor and the channel layer of the second transistor are isolated from each other on the side of the second insulating layer away from the substrate
  • the third insulating layer covers the channel layer of the first transistor, the The channel layer of the second transistor and the side of the second insulating layer away from the substrate, the source and drain of the first transistor and the source and drain of the second transistor are formed at the first The three insulating layers are away from the substrate, and the protective layer covers the source and drain of the first transistor and the source and drain of the second transistor away from the substrate.
  • the non-display area includes two parts respectively located on opposite sides of the display area, and both sides of the display area where the non-display area is located are perpendicular to the direction in which the data line extends, while Parallel to the direction in which the gate lines extend, the plurality of gate guide lines and the plurality of data lines are drawn from the non-display area on one side to be electrically connected to the external control circuit.
  • an electrostatic discharge structure is further included, and the electrostatic discharge structure is disposed in the non-display area on a side opposite to a drawing direction of the plurality of gate guide lines and the plurality of data lines.
  • An electrostatic discharge structure is connected to the electrical transmission layer to discharge static electricity.
  • the display area is electrically connected to an external control circuit, thereby reducing the area of the wiring on both sides of the array substrate, which is beneficial to the narrow design of the display panel frame.
  • FIG. 1 is a schematic structural diagram of a display panel provided by one embodiment of the present application.
  • FIG. 2 is a partial schematic view of the section of FIG. 1;
  • FIG. 3 is a schematic diagram of the circuit structure of the thin film transistor unit in FIG. 2;
  • FIG. 4 is a schematic diagram of an arrangement of gate guide lines provided by an embodiment of this application.
  • FIG. 5 is a schematic diagram of a data line arrangement provided by one embodiment of the present application.
  • sputtering For example, sputtering, electroplating, molding, chemical vapor deposition (Chemical Vapor Deposition, CVD), physical vapor deposition (Physical Vapor Deposition, PVD), evaporation, hybrid physical-chemical vapor deposition (Hybrid Physical-Chemical Vapor Deposition, HPCVD) , Plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition (PECVD), low pressure chemical vapor deposition (Low Pressure Pressure Chemical Vapor Deposition (LPCVD), etc.
  • CVD chemical vapor deposition
  • PVD Physical vapor deposition
  • HPCVD Hybrid Physical-Chemical Vapor Deposition
  • PECVD Plasma enhanced chemical vapor deposition
  • LPCVD Low Pressure Pressure Chemical Vapor Deposition
  • An embodiment of the present application provides an array substrate, and a display panel and a display device using the array substrate, wherein the array substrate includes:
  • a substrate having a display area and a non-display area outside the display area
  • a plurality of gate lines are arranged in the display area and are arranged in rows at intervals;
  • a plurality of data lines are arranged in the display area and are arranged in columns at intervals.
  • the plurality of data lines are perpendicular to the plurality of gate lines and do not intersect each other.
  • the plurality of gate lines and the plurality of data The lines together define the display area;
  • An electric transmission layer is disposed in the display area, the electric transmission layer includes a plurality of gate guide lines, and the plurality of gate guide lines are electrically connected to the plurality of gate lines, respectively, so that the plurality of The gate lines are electrically connected to the external control circuit through the plurality of gate guide lines, and the plurality of gate guide lines and the plurality of data lines are drawn from the same side of the display area to the non-display area To be electrically connected to the external control circuit.
  • FIG. 1 is a schematic structural view of a display panel provided by one embodiment of the present application
  • FIG. 2 is a partial structural schematic view of the cross section of FIG. 1
  • FIG. 3 is a circuit structure of the thin film transistor unit in FIG. 4
  • FIG. 4 is a schematic diagram of an arrangement of gate guide lines provided in one embodiment of the present application
  • FIG. 5 is a schematic diagram of an arrangement of data lines provided in one embodiment of the present application.
  • One embodiment of the present application proposes an array substrate 100 that can be applied to a display panel 200, preferably an OLED display panel.
  • the array substrate 100 has a display area 101 and a non-display area 102 located on at least one side of the display area 101.
  • the array substrate 100 further includes a base 10 and an electrical transmission layer 20 formed on the base 10, a plurality of thin film transistor units 30, a plurality of gate lines 211, a plurality of data lines 23, and a plurality of power lines 221.
  • the electrical transmission layer 20, the plurality of thin film transistor units 30, the plurality of gate lines 211, the plurality of data lines 23, and the plurality of power supply lines 221 are all correspondingly located in the display area 101.
  • the non-display area 102 includes two parts respectively located on opposite sides of the display area 101. It should be noted that FIG. 2 only shows a schematic cross-sectional structure diagram of one thin film transistor unit 30.
  • the display panel 200 includes a plurality of organic light-emitting units 1.
  • the plurality of thin-film transistor units 30 can be used to drive and control the plurality of organic light-emitting units 1 in the display panel 200 to enable light-emitting display, wherein each of the thin-film transistor units 30 corresponds to one organic light-emitting unit 1 .
  • the organic light-emitting unit 1 includes a cathode, an organic light-emitting layer, and an anode that are stacked.
  • the organic light-emitting layer is disposed between the cathode and the anode.
  • the organic light-emitting layer is excited to emit light, thereby enabling light-emitting display, wherein
  • the thin film transistor unit 30 is electrically connected to the anode, so that the organic light emitting unit 1 can be driven and controlled. Understandably, the organic light-emitting unit 1 may still have more functional layer structures to achieve better light-emitting effect.
  • the plurality of organic light-emitting units 1 include one or more of a red light-emitting unit, a blue light-emitting unit, and a green light-emitting unit. It can be understood that when each of the thin film transistor units 30 is connected to one of the red light emitting unit, the blue light emitting unit, or the green light emitting unit, the organic light emitting unit 1 can be made Light out in a single color.
  • the electrical transmission layer 20 includes a plurality of gate guide lines 21 and a plurality of power supply guide lines 22 that are insulated and isolated from each other, and the plurality of gate guide lines 21 are all connected to the plurality of data lines 23 Parallel is not coplanar.
  • Each gate guide line 21 is connected to one gate line 211, and each power guide line 22 is connected to one power line 221.
  • the substrate 10 is made of an electrically insulating material, so that the electrical transmission layer 20 can be encapsulated and protected to avoid electrical conduction between the electrical transmission layer 20 and other external cables.
  • the plurality of gate lines 211 are arranged in rows at intervals, the plurality of data lines 23 are arranged in columns at intervals and are perpendicular to the plurality of gate lines 211, and two adjacent gate lines 211 are adjacent to two adjacent ones.
  • the area surrounded by the data lines 23 defines a pixel unit, each pixel unit corresponds to a thin film transistor unit 30 and an organic light emitting unit 1, a plurality of pixel units are arranged in rows and columns to define the display area of the display panel 200, That is, the display area 101 of the array substrate 100.
  • the plurality of power lines 221 are arranged parallel to the plurality of gate lines 211 or spaced apart from the plurality of data lines 23. In this embodiment, the plurality of power lines 221 and the plurality of gate lines 211 are arranged in parallel and spaced apart. In some embodiments, both sides of the display panel 200 where the non-display area 102 is located are perpendicular to the direction in which the data line 23 extends, and parallel to the direction in which the gate line 211 extends.
  • the plurality of gate guide lines 21 and the plurality of power guide lines 22 are electrically connected to an external control circuit (not shown), so that each of the gate lines 211 and each of the power supplies
  • the line 221 and each of the data lines 23 are electrically connected to the external control circuit of the non-display area 102 on the display area 101 side, and the thin film transistor unit 30 is controlled by the external control circuit.
  • an external pin connection area 60 is provided in the non-display area 102 for connecting the plurality of gate guide lines 21, the plurality of power guide lines 22, and the plurality of data
  • the line 23 is connected to the external control circuit.
  • each of the gate lines 211, each of the power lines 221, and each of the data lines 23 are drawn from one side of the array substrate 100 to be connected to the external control circuit, as compared with the prior art
  • the gate line 211, the power line 221, and the data line 23 are respectively drawn from two or more sides of the array substrate 100, the present invention can reduce the wiring on both sides of the array substrate 100
  • the area is beneficial to the narrow design of the display panel 200 frame.
  • the external control circuit is, for example, a driver IC, which may be directly arranged in the non-display area, or may be directly arranged in the non-display area through a flexible circuit board.
  • a plurality of the thin film transistor units 30 are disposed on the electrical transmission layer 20, and the thin film transistor unit 30 is provided with an operating current and/or operating voltage through the electrical transmission layer 20, so that the thin film transistor unit 30 Can work normally. It can be understood that the thin film transistor unit 30 can be produced through sputtering, evaporation, vapor deposition, etching, etc., so that the thin film transistor unit 30 is disposed on the electrical transmission layer 20.
  • Each of the thin film transistor units 30 includes a first transistor 31 and a second transistor 32.
  • the gate of each first transistor 31 is electrically connected to an adjacent gate line 211.
  • the source of each first transistor 31 is electrically connected to an adjacent one of the data lines 23. All the data lines 23 are electrically connected to the external control circuit of the non-display area 102 on one side.
  • the source of the second transistor 32 in the same row is electrically connected to an adjacent power line 221.
  • the first transistor 31 includes a first gate 311, a first semiconductor 312 corresponding to the position of the first gate 311, and a first source 313 respectively in contact with opposite sides of the first semiconductor 312 ⁇ 314. It is understandable that the first gate 311 corresponds to the position of the first semiconductor 312.
  • the first gate 311 is the gate of the first transistor 31, and the first source 313 and the first drain 314 are the source and drain of the first transistor 31, respectively.
  • the first semiconductor 312 is the channel layer of the first transistor 31.
  • the second transistor 32 includes a second gate 321, a second semiconductor 322 corresponding to the position of the second gate 321, and second source electrodes respectively in contact with opposite sides of the second semiconductor 322 323 ⁇ 324 ⁇ 323 and the second drain 324.
  • the second gate 321 corresponds to the position of the second semiconductor 322, the second gate 321 is the gate of the second transistor 32, the second source 323 and the second drain 324 are the source and drain of the second transistor 32 respectively, and the second semiconductor 322 is the channel layer of the second transistor 32.
  • the gate of the second transistor 32 is electrically connected to the drain of the first transistor 31, thereby electrically connecting the first transistor 31 and the second transistor 32 in parallel.
  • the gate guide line 21 of the electrical transmission layer 20 is electrically connected to the gate of the first transistor 31 through the gate line 211, and the power guide line 22 is connected to the second transistor through the power line 221
  • the source of 32 is electrically connected to provide the thin film transistor unit 30 with an operating current and/or operating voltage.
  • the source of the first transistor 31 is externally connected to the data signal current and/or voltage through the data line 23, and the drain of the second transistor 32 is electrically connected to the organic light-emitting unit 1, that is, the The thin-film transistor unit 30 can drive and control the organic light-emitting unit 1 to realize light-emitting display.
  • an embodiment of the present application provides a schematic diagram of a circuit structure of a thin film transistor unit 30.
  • the gate guide line 21 and the power guide line 22 of the electrical transmission layer 20 provide the thin film transistor unit 30 with an operating current and/or operating voltage, and the source of the first transistor 31 is the thin film through the data line 23
  • the transistor unit 30 provides a data signal current and/or voltage.
  • the first transistor 31 and the second transistor 32 are organically connected to form the thin film transistor unit 30, and are arranged on the same layer structure together, for example, on the electrical transmission layer 20.
  • This structure can conveniently provide power support for the thin film transistor unit 30 and provide stable and consistent operating current and/or operating voltage to obtain a stable control signal to improve the stability of the product.
  • the gate guide line 21, the power guide line 22, and the data line 23 that provide the thin film transistor unit 30 with an operating current and/or operating voltage are all drawn from one side of the array substrate 100 to communicate with the external
  • the control circuit is electrically connected, thereby facilitating the design of the narrow border of the display panel 200.
  • the array substrate 100 further includes a first insulating layer 41, a second insulating layer 42, a third insulating layer 43, a protective layer 44 and a planarization layer 45.
  • the electrical transmission layer 20 is formed on the substrate 10, the first insulating layer 41 is formed on the electrical transmission layer 20, and the first gate 311 and the second gate 321 are isolated from each other On the first insulating layer 41, the electrical transmission layer 20 is insulated from the first gate 311 and the second gate 321 by the first insulating layer 41, respectively.
  • the second insulating layer 42 covers the first gate 311, the second gate 321, and the first insulating layer 41, and the first semiconductor 312 and the second semiconductor 322 are isolated from each other On the second insulating layer 42.
  • the first gate 311 corresponds to the position of the first semiconductor 312
  • the second gate 321 corresponds to the position of the second semiconductor 322.
  • the electrical connection between the layers is performed by using vias between the layers.
  • the electrical connection between the first gate 311 and the gate guide line 21 is The via hole 411 penetrates the first insulating layer 41 and is used to achieve electrical connection between the first gate 311 and the gate guide line 21.
  • the third insulating layer 43 is formed on the first semiconductor 312 and the second semiconductor 322 and covers the second insulating layer 42.
  • the third insulating layer 43 fixes and encapsulates the first semiconductor 312 and the second semiconductor 322 to protect the first semiconductor 312 and the second semiconductor 322.
  • first source electrode 313, the first drain electrode 314, the second source electrode 323 and the second drain electrode 324 are formed on the third insulating layer 43 at intervals, the first The source electrode 313, the first drain electrode 314, the second source electrode 323, and the second drain electrode 324 may be simultaneously patterned from the same conductive material, for example, aluminum, silver, gold, or alloys thereof and other conductive materials form.
  • the first source electrode 313 and the first drain electrode 314 are respectively located on two opposite sides of the first semiconductor 312, and respectively pass through the via hole 431, the via hole 432 that penetrate the third insulating layer 43 and the The first semiconductor 312 is in contact.
  • one end of the first drain 314 is in contact with the first semiconductor 312, and the other end is electrically connected to the gate of the second transistor 32, that is, the second gate 321.
  • the first drain 314 is electrically connected to the second gate 321 through a via 3141 penetrating the third insulating layer 43 and the second insulating layer 42.
  • the second source electrode 323 and the second drain electrode 324 are respectively located on two opposite sides of the second semiconductor 322, and respectively pass through the via hole 433 and the via hole 434 penetrating the third insulating layer 43
  • the second semiconductor 322 is electrically connected.
  • the power supply line 221 and the second source electrode 323 are provided on the same layer and are electrically connected.
  • the power supply line 221 is electrically connected to the power supply guide line 22 through a via 2211.
  • a storage capacitor C (as shown in FIG. 2) is formed between the first drain 314 and the second drain 324, so as to provide a stable operating current and/or operation for the second transistor 32 Voltage.
  • the protective layer 44 is formed on the data line 23, the first source electrode 313, the first drain electrode 314, the second source electrode 323, the second drain electrode 324, the The power line 221 and the third insulating layer 43 are used for packaging protection.
  • the planarization layer 45 is formed on the protection layer 44 to form a flat plane.
  • a common electrode 50 is formed on the planarization layer 45, and the common electrode 50 is electrically connected to the drain of the second transistor 32 through a via 51, wherein the anode of the organic light-emitting unit 1 is The common electrode 50 is electrically connected, so that the thin film transistor unit 30 and the organic light emitting unit 1 are electrically connected.
  • the electrical connection between layers can be electrically connected by using vias between layers. Filling the vias penetrating the insulating layer with a metal conductive material can realize the electrical connection between the layers For connection, for example, the filling metal in the via and the corresponding metal conductive layer above the via are made of the same metal material. Of course, in some embodiments, the electrical connection between layers can also be performed by using connection line wiring.
  • the electrical transmission layer 20 provides power support for the thin film transistor unit 30 through vias between layers.
  • a plurality of the thin film transistor units 30 are arranged in an array on the electrical transmission layer 20 to correspondingly drive and control the plurality of organic light emitting units 1 of the display panel 200, wherein the plurality of organic light emitting units 1 are defined and formed The display area of the display panel 200.
  • the gate guide line 21 and the power guide line 22 are provided with insulation isolation, and they cooperate with each other to form a layered structure.
  • the electrical transmission layer 20 can be prepared by production processes such as sputtering, evaporation, vapor deposition, and etching.
  • the gate guide lines 21 are strip structures distributed at intervals, and the power guide lines 22 are connected in a layered structure, for example, a power guide layer is plated, and the power guide layers are etched separately An insulating channel is filled with an insulating material, that is, the insulating channel surrounds the gate guide line 21, so that the power guide line 22 is insulated from the gate guide line 21.
  • the gate conductive line 21 and the power conductive line 22 are simultaneously patterned on the same conductive layer.
  • the power guide wire 22 has a grid layer shape.
  • the power guide wire 22 is arranged in a grid shape, on the one hand, it can save production materials, and on the other hand, it is beneficial to reduce the internal stress of the power guide wire 22. In particular, when the flexible display panel 200 is bent, the power guide wire 22 can be bent better, and the stress generated inside is small, thereby enhancing the bending performance of the product.
  • the electrical transmission layer 20 includes a plurality of the gate guide lines 21, and the gate guide lines 21 provide gates for the corresponding one or more thin film transistor units 30 Working current and/or working voltage.
  • Each gate guide line 21 is electrically connected to one gate line 211 correspondingly, and the gate line 211 and the external control circuit located in the non-display area 102 are realized through the gate guide line 21 connection.
  • the gate guide lines 21 are set to have different lengths.
  • the length of the gate The electrode guide line 21 is wider than the short gate guide line 21.
  • a plurality of the gate guide lines 21 are sequentially arranged in the order of length, which may be from the side of the display area 101, a plurality of the gate guide lines 21 are arranged in the order of length, or may be arranged from the display
  • the two sides of the area 101 are arranged in order of length.
  • the shortest gate guide line 21 is located in the center of the display area 101, and the gates arranged from the center to both sides
  • the pole guide line 21 is getting longer.
  • the power supply guide line 22 includes two parts, a portion located in a region where the gate guide line 21 is not provided is grid-shaped, and a portion located in a region where the gate guide line 21 is provided is strip-shaped .
  • the power supply guide line 22 of the strip-shaped portion is arranged parallel to the gate guide line 21 at intervals.
  • the gate guide lines 21 are the same length, the gate guide lines 21 should have the same width to ensure that the electrical signals are stable and consistent.
  • the gate guide lines 21 are provided with inconsistent lengths, to ensure that they can provide stable and consistent electrical signals, the long gate guide lines 21 are wider than the short gate guide lines 21.
  • the long gate guide line 21 can transmit electrical signals to other farther areas of the display panel 200, but because of its long transmission distance and relatively large impedance, the gate guide line 21 needs to be wider in design;
  • the short gate guide line 21 can transmit electrical signals to other closer areas of the display panel 200, but due to its short transmission distance and relatively low impedance, the gate guide line 21 needs to be narrowed to This ensures that the gate guide lines 21 with different lengths can provide multiple stable and consistent electrical signals, thereby ensuring product stability.
  • some of the gate guide lines 21 are long and wide, which can not only reduce the difficulty of the production process and improve production quality, so as to ensure that the gate guide lines 21 can provide stable and consistent electrical signals, thereby ensuring product stability .
  • FIG. 5 One embodiment of the present application provides a schematic diagram of the arrangement of the source connection line of the first transistor 31, that is, the data line 23.
  • the source of the first transistor 31 in the thin film transistor unit 30 passes through the data line 23 to provide a data electrical signal for the thin film transistor unit 30.
  • the source of the first transistor 31 is connected to the external control circuit through the data line 23 to drive and control the thin film transistor unit 30.
  • the data line 23, the gate guide line 21, and the power guide line 22 are all insulated from each other, and are all from the same side of the display panel 200 (that is, located on the side of the display area 101 The non-display area 102) is led out to be electrically connected to the external control circuit.
  • the gate guide line 21 and the power guide line 22 are arranged in the same layer, and can be formed by patterning the same conductive material at the same time.
  • the data line 23 may be disposed in the same layer as the first source electrode 313, and the data line 23, the first drain electrode 314, the second source electrode 323, and the second drain electrode 324 are electrically conductive The material is simultaneously patterned.
  • the array substrate 100 further includes a flip-chip thin film structure (not shown).
  • the flip-chip thin film structure is located in the non-display area 102, and is electrically connected to the gate guide line 21, the power guide line 22, and the data line 23 of the first transistor 31.
  • the external control circuit is communicatively connected to the flip-chip thin film structure, thereby logically controlling the thin film transistor unit 30. Understandably, other IC chips may be connected to the flip-chip thin film structure to assist the external control circuit to logically control the thin film transistor unit 30, so that the thin film transistor unit 30 is connected to
  • the organic light emitting unit 1 can normally emit light for display.
  • the array substrate 100 further includes an electrostatic discharge structure 70 (see FIG. 1).
  • the electrostatic discharge structure 70 is connected to the electrical transmission layer 20 to discharge static electricity.
  • the electrostatic discharge structure 70 is disposed in the non-display area 102 on the side opposite to the drawing direction of the plurality of gate guide lines 21 and the plurality of data lines 23.
  • an embodiment of the present application further proposes a display device.
  • the display device includes the display panel 200. It can be understood that the display device includes but is not limited to a display device such as a smart phone, a tablet computer, a PC computer, or a smart TV.

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Abstract

An array substrate (100), a display panel (200), and a display device. The array substrate (100) comprises: a base (10) having a display area (101) and a non-display area (102); a plurality of gate lines (211) provided in the display area (101); a plurality of data lines (23) provided in the display area (101); and an electric transmission layer (20) provided in the display area (101) and comprising a plurality of gate guiding lines (21), wherein the plurality of gate guiding lines (21) are electrically connected to the plurality of gate lines (211), respectively, and the plurality of gate lines (211) and the plurality of data lines (23) are both led out of the same side of the display area (101) so as to be electrically connected to an external control circuit (60). Because the plurality of gate guiding lines (21) and the plurality of data lines (23) are led out of the same side of the display area (101) to the non-display area (102), and are electrically connected to the external control circuit (60), area occupied by flat cables on both sides of the array substrate (100) is reduced.

Description

阵列基板、显示面板及显示装置Array substrate, display panel and display device 技术领域Technical field
本申请涉及显示技术领域,具体地,涉及一种阵列基板、使用该阵列基板的显示面板及显示装置。The present application relates to the field of display technology, and in particular, to an array substrate, a display panel using the array substrate, and a display device.
背景技术Background technique
在有机发光二极管(Organic Light-Emitting Diode,OLED)显示技术中,薄膜晶体管(Thin Film Transistor,TFT)可用于驱动控制OLED显示面板中的有机发光层,从而实现出光显示。薄膜晶体管进行驱动控制时,需要数据线、栅极线以及电源线为其提供电信号支持。另外地,薄膜晶体管进行驱动控制时,还需要其他辅助电路结构,例如逻辑控制电路结构,覆晶薄膜结构等。然而,这些电路结构连接于薄膜晶体管会导致显示面板的连接导电线排布复杂化,排布面积增大,不利于显示面板边框窄小化设计。In Organic Light-Emitting Diode (OLED) display technology, thin-film transistors (Thin Film Transistor, TFT) can be used to drive and control the organic light-emitting layer in the OLED display panel, thereby achieving light-emitting display. When thin film transistors are driven and controlled, data lines, gate lines, and power lines are required to provide electrical signal support. In addition, when the thin film transistor is driven and controlled, other auxiliary circuit structures, such as a logic control circuit structure and a flip-chip thin film structure, are also required. However, the connection of these circuit structures to the thin-film transistors will complicate the arrangement of the connecting conductive lines of the display panel and increase the arrangement area, which is not conducive to the narrow and narrow design of the display panel.
发明内容Summary of the invention
有鉴于此,本申请提出一种阵列基板以及使用该阵列基板的显示面板及显示装置,旨在于改善所述阵列基板的连接电导线的排布结构,以利于显示面板边框窄小化设计。In view of this, the present application proposes an array substrate, a display panel and a display device using the array substrate, aiming to improve the arrangement structure of the connecting electrical wires of the array substrate, so as to facilitate the narrow design of the display panel frame.
为此,本申请提出一种阵列基板,包括:To this end, this application proposes an array substrate, including:
基底,具有显示区域和位于所述显示区域外的非显示区域;A substrate having a display area and a non-display area outside the display area;
多条栅极线,设置于所述显示区域内,且间隔成行排列;A plurality of gate lines are arranged in the display area and are arranged in rows at intervals;
多条数据线,设置于所述显示区域内,且间隔成列排列,所述多条数据线与所述多条栅极线垂直不相交,所述多条栅极线与所述多条数据 线共同界定出所述显示区域;以及A plurality of data lines are arranged in the display area and are arranged in columns at intervals. The plurality of data lines are perpendicular to the plurality of gate lines and do not intersect each other. The plurality of gate lines and the plurality of data The lines together define the display area; and
电传输层,设置于所述显示区域内,所述电传输层包括多条栅极引导线,所述多条栅极引导线分别与所述多条栅极线电连接,从而所述多条栅极线通过所述多条栅极引导线与外部控制电路电连接,所述多条栅极引导线与所述多条数据线均从所述显示区域的同一侧引出至所述非显示区域以与所述外部控制电路电连接。An electric transmission layer is disposed in the display area, the electric transmission layer includes a plurality of gate guide lines, and the plurality of gate guide lines are electrically connected to the plurality of gate lines, respectively, so that the plurality of The gate lines are electrically connected to the external control circuit through the plurality of gate guide lines, and the plurality of gate guide lines and the plurality of data lines are drawn from the same side of the display area to the non-display area To be electrically connected to the external control circuit.
可选地,所述阵列基板还包括设置于所述显示区域内的多条电源线,所述电传输层还包括电源引导线,用于将所述电源线与所述外部控制电路实现电连接,所述电源引导线设置于所述显示区域内,且与所述多条栅极引导线、所述多条数据线从所述显示区域的同一侧引出以与所述外部控制电路电连接。Optionally, the array substrate further includes a plurality of power lines disposed in the display area, and the electrical transmission layer further includes a power guide line for electrically connecting the power line and the external control circuit The power supply guide line is provided in the display area, and is drawn from the same side of the display area as the plurality of gate guide lines and the plurality of data lines to be electrically connected to the external control circuit.
可选地,所述电源引导线设置为栅格状。Optionally, the power guide wire is arranged in a grid shape.
可选地,所述电源引导线包括两部分,所述电源引导线位于未设置有所述栅极引导线的区域的部分呈栅格状,所述电源引导线位于设置有所述栅极引导线的区域的部分呈条状。Optionally, the power supply guide line includes two parts, the portion of the power supply guide line located in the area where the gate guide line is not provided is grid-shaped, and the power supply guide line is located on the position provided with the gate guide The part of the line area is in the form of a strip.
可选地,所述多条栅极引导线间隔分布为条状结构,所述多条栅极引导线与所述多条数据线平行不共面。Optionally, the plurality of gate guide lines are distributed in a stripe structure at intervals, and the plurality of gate guide lines are parallel to the plurality of data lines and are not coplanar.
可选地,所述多条栅极引导线长短不一致设置,长的所述栅极引导线比短的所述栅极引导线宽大。Optionally, the lengths of the plurality of gate guide lines are not uniformly set, and the long gate guide line is wider than the short gate guide line.
可选地,所述多条栅极引导线按长短次序依次排列。Optionally, the plurality of gate guide lines are arranged in order of length.
可选地,所述多条栅极引导线最短的位于所述显示区域中央,从所述显示区域中央分别向两侧排列的所述栅极引导线越来越长。Optionally, the shortest of the plurality of gate guide lines is located in the center of the display area, and the gate guide lines arranged from the center of the display area to both sides are longer and longer.
可选地,还包括多个薄膜晶体管单元及多条电源线,所述多个薄膜晶体管单元呈矩阵排列在所述显示区域内,相邻的两条所述栅极线与相邻的两条所述数据线围成的区域定义出一个像素单元,每一所述薄膜晶 体管单元对应位于一所述像素单元内,每一所述薄膜晶体管单元均与对应的一所述栅极线、一所述数据线及一所述电源线电连接。Optionally, it further includes a plurality of thin film transistor units and a plurality of power supply lines, the plurality of thin film transistor units are arranged in a matrix in the display area, two adjacent gate lines and two adjacent A region surrounded by the data lines defines a pixel unit, each of the thin film transistor units corresponds to a pixel unit, and each of the thin film transistor units is associated with a corresponding gate line and a The data line and the power line are electrically connected.
可选地,还包括第一绝缘层,所述电传输层形成于所述基底表面,所述第一绝缘层形成于所述电传输层远离所述基底的一侧,所述多个薄膜晶体管单元形成于所述第一绝缘层远离所述电传输层的一侧,从而所述第一绝缘层使所述电传输层与所述多个薄膜晶体管单元相互绝缘。Optionally, it further includes a first insulating layer, the electrical transmission layer is formed on the surface of the substrate, the first insulating layer is formed on a side of the electrical transmission layer away from the substrate, the plurality of thin film transistors The cell is formed on a side of the first insulating layer away from the electric transmission layer, so that the first insulating layer insulates the electric transmission layer and the plurality of thin film transistor units from each other.
可选地,每一所述薄膜晶体管单元包括一第一晶体管及一第二晶体管;每一所述第一晶体管的栅极与相邻的一所述栅极线电连接,源极与相邻的一所述数据线电连接,以及漏极与同一所述薄膜晶体管单元中的所述第二晶体管的栅极电连接;每一所述第二晶体管的源极与一所述电源线电连接,漏极用于与一有机发光单元连接。Optionally, each of the thin film transistor units includes a first transistor and a second transistor; the gate of each first transistor is electrically connected to an adjacent one of the gate lines, and the source is adjacent to One of the data lines is electrically connected, and the drain is electrically connected to the gate of the second transistor in the same thin film transistor unit; the source of each second transistor is electrically connected to a power line , The drain is used to connect with an organic light emitting unit.
可选地,还包括第二绝缘层、第三绝缘层及保护层,所述第一晶体管的栅极及所述第二晶体管的栅极相互隔离设置于所述第一绝缘层远离所述电传输层的一侧,所述第二绝缘层覆盖于所述第一晶体管的栅极、所述第二晶体管的栅极和所述第一绝缘层远离所述基底的一侧,所述第一晶体管的通道层及所述第二晶体管的通道层相互隔离设置于所述第二绝缘层远离所述基底的一侧,所述第三绝缘层覆盖于所述第一晶体管的通道层、所述第二晶体管的通道层和所述第二绝缘层远离所述基底的一侧,所述第一晶体管的源极、漏极和所述第二晶体管的源极、漏极间隔形成于所述第三绝缘层远离所述基底的一侧,所述保护层覆盖于所述第一晶体管的源极、漏极和所述第二晶体管的源极、漏极远离所述基底的一侧。Optionally, a second insulating layer, a third insulating layer, and a protective layer are also included. The gate of the first transistor and the gate of the second transistor are isolated from each other and disposed on the first insulating layer away from the electrical On one side of the transmission layer, the second insulating layer covers the gate of the first transistor, the gate of the second transistor, and the side of the first insulating layer away from the substrate, the first The channel layer of the transistor and the channel layer of the second transistor are isolated from each other on the side of the second insulating layer away from the substrate, and the third insulating layer covers the channel layer of the first transistor, the The channel layer of the second transistor and the side of the second insulating layer away from the substrate, the source and drain of the first transistor and the source and drain of the second transistor are formed at the first The three insulating layers are away from the substrate, and the protective layer covers the source and drain of the first transistor and the source and drain of the second transistor away from the substrate.
可选地,所述非显示区域包括分别位于所述显示区域两相对侧的两部分,所述非显示区域所在的所述显示区域的两侧均与所述数据线延伸的方向相垂直,同时与所述栅极线延伸的方向相平行,所述多条栅极引 导线与所述多条数据线均从其中一侧的所述非显示区域引出以与所述外部控制电路电连接。Optionally, the non-display area includes two parts respectively located on opposite sides of the display area, and both sides of the display area where the non-display area is located are perpendicular to the direction in which the data line extends, while Parallel to the direction in which the gate lines extend, the plurality of gate guide lines and the plurality of data lines are drawn from the non-display area on one side to be electrically connected to the external control circuit.
可选地,还包括静电释放结构,所述静电释放结构设置于与所述多条栅极引导线和所述多条数据线的引出方向相反的一侧的所述非显示区域内,所述静电释放结构连接于所述电传输层以释放静电。Optionally, an electrostatic discharge structure is further included, and the electrostatic discharge structure is disposed in the non-display area on a side opposite to a drawing direction of the plurality of gate guide lines and the plurality of data lines. An electrostatic discharge structure is connected to the electrical transmission layer to discharge static electricity.
在本申请技术方案中,所述阵列基板通过改变其连接电导线的排布,所述多条栅极引导线、所述多条数据线均从所述显示区域的同一侧引出至所述非显示区域,以与外部控制电路电连接,从而减少所述阵列基板两侧边的排线面积,利于显示面板边框窄小化设计。In the technical solution of the present application, by changing the arrangement of the connected electrical conductors of the array substrate, the plurality of gate guide lines and the plurality of data lines are all led out to the non-linear area from the same side of the display area The display area is electrically connected to an external control circuit, thereby reducing the area of the wiring on both sides of the array substrate, which is beneficial to the narrow design of the display panel frame.
附图说明BRIEF DESCRIPTION
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图示出的结构获得其他的附图。In order to more clearly explain the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without paying any creative work, other drawings can be obtained according to the structures shown in these drawings.
图1是本申请其中一实施例提供的一种显示面板的结构示意图;FIG. 1 is a schematic structural diagram of a display panel provided by one embodiment of the present application;
图2是图1截面的部分结构示意图;FIG. 2 is a partial schematic view of the section of FIG. 1;
图3是图2中的薄膜晶体管单元的电路结构示意图;3 is a schematic diagram of the circuit structure of the thin film transistor unit in FIG. 2;
图4是本申请其中一实施例提供的一种栅极引导线的排布示意图;4 is a schematic diagram of an arrangement of gate guide lines provided by an embodiment of this application;
图5是本申请其中一实施例提供的一种数据线的排布示意图。FIG. 5 is a schematic diagram of a data line arrangement provided by one embodiment of the present application.
本申请目的的实现、功能特点及优点将结合实施例,参照附图做进一步说明。The implementation, functional characteristics and advantages of the present application will be further described in conjunction with the embodiments and with reference to the drawings.
具体实施方式detailed description
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请的一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative work fall within the protection scope of the present application.
除非另有定义,本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。若本申请实施例中有涉及“第一”、“第二”等的描述,则该“第一”、“第二”等的描述仅用于描述目的,而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。另外,各个实施例之间的技术方案可以相互结合,但是必须是以本领域普通技术人员能够实现为基础,当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在,也不在本申请要求的保护范围之内。Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field of the present application. If there are descriptions related to "first", "second", etc. in the embodiments of the present application, the descriptions of "first", "second", etc. are for descriptive purposes only, and cannot be interpreted as indicating or implying their relative The importance or the number of technical features indicated is implicitly indicated. Thus, the features defined as "first" and "second" may include at least one of the features explicitly or implicitly. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary skilled in the art to achieve, when the combination of technical solutions contradicts each other or cannot be achieved, it should be considered that the combination of such technical solutions does not exist , Nor within the scope of protection required by this application.
可以理解地是,如本文所示的本申请实施例涉及的一个或多个层间物质,层与层之间的位置关系使用了诸如术语“层叠”或“形成”或“施加”或“设置”进行表达,本领域技术人员可以理解的是:任何术语诸如“层叠”或“形成”或“施加”,其可覆盖“层叠”的全部方式、种类及技术。例如,溅射、电镀、模塑、化学气相沉积(Chemical Vapor Deposition,CVD)、物理气相沉积(Physical Vapor Deposition,PVD)、蒸发、混合物理-化学气相沉积(Hybrid Physical-Chemical Vapor Deposition,HPCVD)、等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition,PECVD)、低压化学气相沉积(Low Pressure Chemical Vapor Deposition,LPCVD)等。It is understandable that, as shown in this document, the one or more interlayer substances involved in the embodiments of the present application, the positional relationship between the layers uses such terms as “lamination” or “formation” or “application” or “arrangement” To express ", those skilled in the art can understand that any term such as "lamination" or "formation" or "application" can cover all the methods, types and techniques of "lamination". For example, sputtering, electroplating, molding, chemical vapor deposition (Chemical Vapor Deposition, CVD), physical vapor deposition (Physical Vapor Deposition, PVD), evaporation, hybrid physical-chemical vapor deposition (Hybrid Physical-Chemical Vapor Deposition, HPCVD) , Plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition (PECVD), low pressure chemical vapor deposition (Low Pressure Pressure Chemical Vapor Deposition (LPCVD), etc.
本申请实施例提出一种阵列基板,以及使用该阵列基板的显示面板 与显示装置,其中阵列基板包括:An embodiment of the present application provides an array substrate, and a display panel and a display device using the array substrate, wherein the array substrate includes:
基底,具有显示区域和位于所述显示区域外的非显示区域;A substrate having a display area and a non-display area outside the display area;
多条栅极线,设置于所述显示区域内,且间隔成行排列;A plurality of gate lines are arranged in the display area and are arranged in rows at intervals;
多条数据线,设置于所述显示区域内,且间隔成列排列,所述多条数据线与所述多条栅极线垂直不相交,所述多条栅极线与所述多条数据线共同界定出所述显示区域;以及A plurality of data lines are arranged in the display area and are arranged in columns at intervals. The plurality of data lines are perpendicular to the plurality of gate lines and do not intersect each other. The plurality of gate lines and the plurality of data The lines together define the display area; and
电传输层,设置于所述显示区域内,所述电传输层包括多条栅极引导线,所述多条栅极引导线分别与所述多条栅极线电连接,从而所述多条栅极线通过所述多条栅极引导线与外部控制电路电连接,所述多条栅极引导线与所述多条数据线均从所述显示区域的同一侧引出至所述非显示区域以与所述外部控制电路电连接。An electric transmission layer is disposed in the display area, the electric transmission layer includes a plurality of gate guide lines, and the plurality of gate guide lines are electrically connected to the plurality of gate lines, respectively, so that the plurality of The gate lines are electrically connected to the external control circuit through the plurality of gate guide lines, and the plurality of gate guide lines and the plurality of data lines are drawn from the same side of the display area to the non-display area To be electrically connected to the external control circuit.
为了使本领域技术人员更好地理解本申请技术方案,下面将结合附图,对本申请实施例中的技术方案进行清楚、完整地描述。In order to enable those skilled in the art to better understand the technical solutions of the present application, the technical solutions in the embodiments of the present application will be described clearly and completely in conjunction with the drawings.
请参阅图1至5,图1是本申请其中一实施例提供的一种显示面板的结构示意图;图2是图1截面的部分结构示意图;图3是图2中的薄膜晶体管单元的电路结构示意图;图4是本申请其中一实施例提供的一种栅极引导线的排布示意图;图5是本申请其中一实施例提供的一种数据线的排布示意图。Please refer to FIGS. 1 to 5, FIG. 1 is a schematic structural view of a display panel provided by one embodiment of the present application; FIG. 2 is a partial structural schematic view of the cross section of FIG. 1; FIG. 3 is a circuit structure of the thin film transistor unit in FIG. 4 is a schematic diagram of an arrangement of gate guide lines provided in one embodiment of the present application; FIG. 5 is a schematic diagram of an arrangement of data lines provided in one embodiment of the present application.
请参阅图1至3,本申请其中一实施例提出一种阵列基板100,能够应用于显示面板200,较佳应用于OLED显示面板。所述阵列基板100具有显示区域101和位于所述显示区域101至少一侧的非显示区域102。Please refer to FIGS. 1 to 3. One embodiment of the present application proposes an array substrate 100 that can be applied to a display panel 200, preferably an OLED display panel. The array substrate 100 has a display area 101 and a non-display area 102 located on at least one side of the display area 101.
所述阵列基板100还包括基底10及形成于所述基底10上的电传输层20、多个薄膜晶体管单元30、多条栅极线211、多条数据线23和多条电源线221,所述电传输层20、所述多个薄膜晶体管单元30、所述多条栅极线211、所述多条数据线23和所述多条电源线221均对应位于所 述显示区域101内。The array substrate 100 further includes a base 10 and an electrical transmission layer 20 formed on the base 10, a plurality of thin film transistor units 30, a plurality of gate lines 211, a plurality of data lines 23, and a plurality of power lines 221. The electrical transmission layer 20, the plurality of thin film transistor units 30, the plurality of gate lines 211, the plurality of data lines 23, and the plurality of power supply lines 221 are all correspondingly located in the display area 101.
本实施方式中,所述非显示区域102包括分别位于所述显示区域101两相对侧的两部分。需要说明的是,图2均仅呈现出一个薄膜晶体管单元30的截面结构示意图。In this embodiment, the non-display area 102 includes two parts respectively located on opposite sides of the display area 101. It should be noted that FIG. 2 only shows a schematic cross-sectional structure diagram of one thin film transistor unit 30.
如图2,所述显示面板200包括多个有机发光单元1。所述多个薄膜晶体管单元30可用于驱动控制显示面板200中的多个所述有机发光单元1,以能够实现出光显示,其中,每一所述薄膜晶体管单元30对应一个所述有机发光单元1。As shown in FIG. 2, the display panel 200 includes a plurality of organic light-emitting units 1. The plurality of thin-film transistor units 30 can be used to drive and control the plurality of organic light-emitting units 1 in the display panel 200 to enable light-emitting display, wherein each of the thin-film transistor units 30 corresponds to one organic light-emitting unit 1 .
在一些实施例中,所述有机发光单元1包括层叠设置的阴极、有机发光层及阳极。所述有机发光层设置于所述阴极与所述阳极之间,在所述阴极与所述阳极之间施加工作电压时,所述有机发光层被激发出光,从而能够实现出光显示,其中,所述薄膜晶体管单元30与所述阳极电连接,从而能够驱动控制所述有机发光单元1。可以理解地是,所述有机发光单元1仍可以具有更多的功能层结构,以能够实现更好的出光效果。In some embodiments, the organic light-emitting unit 1 includes a cathode, an organic light-emitting layer, and an anode that are stacked. The organic light-emitting layer is disposed between the cathode and the anode. When an operating voltage is applied between the cathode and the anode, the organic light-emitting layer is excited to emit light, thereby enabling light-emitting display, wherein The thin film transistor unit 30 is electrically connected to the anode, so that the organic light emitting unit 1 can be driven and controlled. Understandably, the organic light-emitting unit 1 may still have more functional layer structures to achieve better light-emitting effect.
可选地,所述多个有机发光单元1包括红光发光单元、蓝光发光单元及绿光发光单元中的一种或多种。可以理解地是,当每一所述薄膜晶体管单元30与所述红光发光单元、所述蓝光发光单元或所述绿光发单元中的一种连接时,从而能够使所述有机发光单元1以单一颜色出光。Optionally, the plurality of organic light-emitting units 1 include one or more of a red light-emitting unit, a blue light-emitting unit, and a green light-emitting unit. It can be understood that when each of the thin film transistor units 30 is connected to one of the red light emitting unit, the blue light emitting unit, or the green light emitting unit, the organic light emitting unit 1 can be made Light out in a single color.
如图2、3,所述电传输层20包括相互绝缘隔离设置的多条栅极引导线21及多条电源引导线22,所述多条栅极引导线21均与所述多条数据线23平行不共面。每一所述栅极引导线21与一条所述栅极线211连接,每一所述电源引导线22与一条所述电源线221连接。在本实施例中,所述基底10采用电绝缘材料,以能够将所述电传输层20进行封装保护,以避免所述电传输层20与外部其他排线电导通。As shown in FIGS. 2 and 3, the electrical transmission layer 20 includes a plurality of gate guide lines 21 and a plurality of power supply guide lines 22 that are insulated and isolated from each other, and the plurality of gate guide lines 21 are all connected to the plurality of data lines 23 Parallel is not coplanar. Each gate guide line 21 is connected to one gate line 211, and each power guide line 22 is connected to one power line 221. In this embodiment, the substrate 10 is made of an electrically insulating material, so that the electrical transmission layer 20 can be encapsulated and protected to avoid electrical conduction between the electrical transmission layer 20 and other external cables.
所述多条栅极线211间隔成行排列,所述多条数据线23间隔成列排列并与所述多条栅极线211垂直不相交,相邻的两条栅极线211与相邻两条数据线23围成的区域定义出一个像素单元,每一个像素单元对应一个薄膜晶体管单元30和一个有机发光单元1,多个像素单元成行成列排列界定出所述显示面板200的显示区域,即所述阵列基板100的所述显示区域101。The plurality of gate lines 211 are arranged in rows at intervals, the plurality of data lines 23 are arranged in columns at intervals and are perpendicular to the plurality of gate lines 211, and two adjacent gate lines 211 are adjacent to two adjacent ones. The area surrounded by the data lines 23 defines a pixel unit, each pixel unit corresponds to a thin film transistor unit 30 and an organic light emitting unit 1, a plurality of pixel units are arranged in rows and columns to define the display area of the display panel 200, That is, the display area 101 of the array substrate 100.
所述多条电源线221与所述多条栅极线211平行间隔设置或与所述多条数据线23平行间隔设置。本实施方式中,所述多条电源线221与所述多条栅极线211平行间隔设置。在一些实施例中,所述非显示区域102所在的所述显示面板200的两侧均与所述数据线23延伸的方向相垂直,同时与所述栅极线211延伸的方向相平行。The plurality of power lines 221 are arranged parallel to the plurality of gate lines 211 or spaced apart from the plurality of data lines 23. In this embodiment, the plurality of power lines 221 and the plurality of gate lines 211 are arranged in parallel and spaced apart. In some embodiments, both sides of the display panel 200 where the non-display area 102 is located are perpendicular to the direction in which the data line 23 extends, and parallel to the direction in which the gate line 211 extends.
请参阅图4,所述多条栅极引导线21及所述多条电源引导线22均与外部控制电路(未图示)电连接,从而,各所述栅极线211、各所述电源线221、各所述数据线23均与位于所述显示区域101一侧的所述非显示区域102的所述外部控制电路电连接,并通过所述外部控制电路控制所述薄膜晶体管单元30。在一些实施例中,在所述非显示区域102内设置有外引脚连接区60,用于将所述多条栅极引导线21、所述多条电源引导线22及所述多条数据线23连接于所述外部控制电路。也就是说,各所述栅极线211、各所述电源线221、各所述数据线23均从所述阵列基板100的一侧引出以与所述外部控制电路连接,相对于现有技术的所述栅极线211、所述电源线221和所述数据线23分别从所述阵列基板100的两侧或两侧以上引出,本发明可以减少所述阵列基板100两侧边的排线面积,以利于显示面板200边框窄小化设计。需要说明的是,所述外部控制电路例如为驱动IC,其可以直接设置于所述非显示区域,也可以通过一柔性电路板而不是直接设置于所述非显示区域。Referring to FIG. 4, the plurality of gate guide lines 21 and the plurality of power guide lines 22 are electrically connected to an external control circuit (not shown), so that each of the gate lines 211 and each of the power supplies The line 221 and each of the data lines 23 are electrically connected to the external control circuit of the non-display area 102 on the display area 101 side, and the thin film transistor unit 30 is controlled by the external control circuit. In some embodiments, an external pin connection area 60 is provided in the non-display area 102 for connecting the plurality of gate guide lines 21, the plurality of power guide lines 22, and the plurality of data The line 23 is connected to the external control circuit. In other words, each of the gate lines 211, each of the power lines 221, and each of the data lines 23 are drawn from one side of the array substrate 100 to be connected to the external control circuit, as compared with the prior art The gate line 211, the power line 221, and the data line 23 are respectively drawn from two or more sides of the array substrate 100, the present invention can reduce the wiring on both sides of the array substrate 100 The area is beneficial to the narrow design of the display panel 200 frame. It should be noted that the external control circuit is, for example, a driver IC, which may be directly arranged in the non-display area, or may be directly arranged in the non-display area through a flexible circuit board.
多个所述薄膜晶体管单元30设置于所述电传输层20之上,并通过所述电传输层20为所述薄膜晶体管单元30提供工作电流和/或工作电压,使所述薄膜晶体管单元30能够正常工作。可以理解地是,所述薄膜晶体管单元30可以通过溅射、蒸镀、气相沉积、蚀刻等生产工艺,以使得所述薄膜晶体管单元30设置于所述电传输层20之上。A plurality of the thin film transistor units 30 are disposed on the electrical transmission layer 20, and the thin film transistor unit 30 is provided with an operating current and/or operating voltage through the electrical transmission layer 20, so that the thin film transistor unit 30 Can work normally. It can be understood that the thin film transistor unit 30 can be produced through sputtering, evaporation, vapor deposition, etching, etc., so that the thin film transistor unit 30 is disposed on the electrical transmission layer 20.
请继续参阅图2,每一所述薄膜晶体管单元30包括一第一晶体管31及一第二晶体管32,每一所述第一晶体管31的栅极与相邻的一所述栅极线211电连接,每一所述第一晶体管31的源极与相邻的一所述数据线23电连接。所有所述数据线23均与位于其中一侧的所述非显示区域102的外部控制电路电连接。同行的所述第二晶体管32的源极与相邻的一所述电源线221电连接。Please continue to refer to FIG. 2. Each of the thin film transistor units 30 includes a first transistor 31 and a second transistor 32. The gate of each first transistor 31 is electrically connected to an adjacent gate line 211. Connected, the source of each first transistor 31 is electrically connected to an adjacent one of the data lines 23. All the data lines 23 are electrically connected to the external control circuit of the non-display area 102 on one side. The source of the second transistor 32 in the same row is electrically connected to an adjacent power line 221.
进一步地,所述第一晶体管31包括第一栅极311、与所述第一栅极311位置对应的第一半导体312及分别与所述第一半导体312两相对侧接触的第一源极313、第一漏极314。可以理解地是,所述第一栅极311与所述第一半导体312位置对应。所述第一栅极311即为所述第一晶体管31的栅极,所述第一源极313、所述第一漏极314分别为所述第一晶体管31的源极和漏极,所述第一半导体312即为所述第一晶体管31的通道层。Further, the first transistor 31 includes a first gate 311, a first semiconductor 312 corresponding to the position of the first gate 311, and a first source 313 respectively in contact with opposite sides of the first semiconductor 312 、第一排水314. It is understandable that the first gate 311 corresponds to the position of the first semiconductor 312. The first gate 311 is the gate of the first transistor 31, and the first source 313 and the first drain 314 are the source and drain of the first transistor 31, respectively. The first semiconductor 312 is the channel layer of the first transistor 31.
同理地,所述第二晶体管32包括第二栅极321、与所述第二栅极321位置对应的第二半导体322及分别与所述第二半导体322两相对侧接触的第二源极323及第二漏极324。所述第二栅极321与所述第二半导体322位置对应,所述第二栅极321即为所述第二晶体管32的栅极,所述第二源极323及所述第二漏极324分别为所述第二晶体管32的源极和漏极,所述第二半导体322即为所述第二晶体管32的通道层。Similarly, the second transistor 32 includes a second gate 321, a second semiconductor 322 corresponding to the position of the second gate 321, and second source electrodes respectively in contact with opposite sides of the second semiconductor 322 323与第一排水324。 323 and the second drain 324. The second gate 321 corresponds to the position of the second semiconductor 322, the second gate 321 is the gate of the second transistor 32, the second source 323 and the second drain 324 are the source and drain of the second transistor 32 respectively, and the second semiconductor 322 is the channel layer of the second transistor 32.
所述第二晶体管32的栅极与所述第一晶体管31的漏极电连接,从 而将所述第一晶体管31及所述第二晶体管32并列电连接。所述电传输层20的栅极引导线21通过所述栅极线211与所述第一晶体管31的栅极电连接,所述电源引导线22通过所述电源线221与所述第二晶体管32的源极电连接,从而为所述薄膜晶体管单元30提供工作电流和/或工作电压。可以理解地是,所述第一晶体管31的源极通过所述数据线23外接数据信号电流和/或电压,所述第二晶体管32的漏极与所述有机发光单元1电连接,即该所述薄膜晶体管单元30可以驱动控制所述有机发光单元1,以实现出光显示。The gate of the second transistor 32 is electrically connected to the drain of the first transistor 31, thereby electrically connecting the first transistor 31 and the second transistor 32 in parallel. The gate guide line 21 of the electrical transmission layer 20 is electrically connected to the gate of the first transistor 31 through the gate line 211, and the power guide line 22 is connected to the second transistor through the power line 221 The source of 32 is electrically connected to provide the thin film transistor unit 30 with an operating current and/or operating voltage. It can be understood that the source of the first transistor 31 is externally connected to the data signal current and/or voltage through the data line 23, and the drain of the second transistor 32 is electrically connected to the organic light-emitting unit 1, that is, the The thin-film transistor unit 30 can drive and control the organic light-emitting unit 1 to realize light-emitting display.
具体地,如图3,本申请实施例提供一种薄膜晶体管单元30的电路结构示意图。所述电传输层20的栅极引导线21及电源引导线22为所述薄膜晶体管单元30提供工作电流和/或工作电压,所述第一晶体管31的源极通过数据线23为所述薄膜晶体管单元30提供数据信号电流和/或电压。Specifically, as shown in FIG. 3, an embodiment of the present application provides a schematic diagram of a circuit structure of a thin film transistor unit 30. The gate guide line 21 and the power guide line 22 of the electrical transmission layer 20 provide the thin film transistor unit 30 with an operating current and/or operating voltage, and the source of the first transistor 31 is the thin film through the data line 23 The transistor unit 30 provides a data signal current and/or voltage.
所述第一晶体管31与所述第二晶体管32有机连结,以构成所述薄膜晶体管单元30,且共同设置于同一层结构上,例如,共同设置于所述电传输层20之上。该结构能够方便地为所述薄膜晶体管单元30提供电源支持,以及提供稳定一致的工作电流和/或工作电压,以获得稳定的控制信号,以提高产品的稳定性。同时地,将为所述薄膜晶体管单元30提供工作电流和/或工作电压的栅极引导线21、电源引导线22、数据线23均自所述阵列基板100的一侧引出以与所述外部控制电路电连接,从而利于显示面板200边框窄小化设计。The first transistor 31 and the second transistor 32 are organically connected to form the thin film transistor unit 30, and are arranged on the same layer structure together, for example, on the electrical transmission layer 20. This structure can conveniently provide power support for the thin film transistor unit 30 and provide stable and consistent operating current and/or operating voltage to obtain a stable control signal to improve the stability of the product. Simultaneously, the gate guide line 21, the power guide line 22, and the data line 23 that provide the thin film transistor unit 30 with an operating current and/or operating voltage are all drawn from one side of the array substrate 100 to communicate with the external The control circuit is electrically connected, thereby facilitating the design of the narrow border of the display panel 200.
请继续参阅图2,所述阵列基板100还包括第一绝缘层41、第二绝缘层42、第三绝缘层43、保护层44及平坦化层45。所述电传输层20形成于所述基底10上,所述第一绝缘层41形成于所述电传输层20上,所述第一栅极311和所述第二栅极321相互隔离设置于所述第一绝缘层 41上,所述电传输层20通过所述第一绝缘层41以分别与所述第一栅极311、所述第二栅极321相互绝缘。所述第二绝缘层42覆盖于所述第一栅极311、所述第二栅极321和所述第一绝缘层41上,所述第一半导体312、所述第二半导体322相互隔离设置于所述第二绝缘层42上。其中,所述第一栅极311与所述第一半导体312位置对应,所述第二栅极321与所述第二半导体322位置对应。Please continue to refer to FIG. 2. The array substrate 100 further includes a first insulating layer 41, a second insulating layer 42, a third insulating layer 43, a protective layer 44 and a planarization layer 45. The electrical transmission layer 20 is formed on the substrate 10, the first insulating layer 41 is formed on the electrical transmission layer 20, and the first gate 311 and the second gate 321 are isolated from each other On the first insulating layer 41, the electrical transmission layer 20 is insulated from the first gate 311 and the second gate 321 by the first insulating layer 41, respectively. The second insulating layer 42 covers the first gate 311, the second gate 321, and the first insulating layer 41, and the first semiconductor 312 and the second semiconductor 322 are isolated from each other On the second insulating layer 42. Wherein, the first gate 311 corresponds to the position of the first semiconductor 312, and the second gate 321 corresponds to the position of the second semiconductor 322.
在本实施例中,层与层之间的电连接是采用层与层之间的过孔进行电连接的,例如,所述第一栅极311与所述栅极引导线21的电连接就是通过过孔411实现,该过孔411贯穿所述第一绝缘层41,并用于实现所述第一栅极311与所述栅极引导线21之间的电连接。In this embodiment, the electrical connection between the layers is performed by using vias between the layers. For example, the electrical connection between the first gate 311 and the gate guide line 21 is The via hole 411 penetrates the first insulating layer 41 and is used to achieve electrical connection between the first gate 311 and the gate guide line 21.
所述第三绝缘层43形成于所述第一半导体312、所述第二半导体322上,并覆盖所述第二绝缘层42。所述第三绝缘层43将所述第一半导体312与所述第二半导体322固定并封装,以保护所述第一半导体312及所述第二半导体322。The third insulating layer 43 is formed on the first semiconductor 312 and the second semiconductor 322 and covers the second insulating layer 42. The third insulating layer 43 fixes and encapsulates the first semiconductor 312 and the second semiconductor 322 to protect the first semiconductor 312 and the second semiconductor 322.
进一步地,所述第一源极313、所述第一漏极314、所述第二源极323及所述第二漏极324间隔形成于所述第三绝缘层43上,所述第一源极313、所述第一漏极314、所述第二源极323及所述第二漏极324可由同一导电材料同时图案化形成,例如由铝、银、金或其合金等导电材质同时形成。所述第一源极313和所述第一漏极314对应位于所述第一半导体312的两相对侧,并分别通过贯穿所述第三绝缘层43的过孔431、过孔432与所述第一半导体312接触。可选地,所述第一漏极314的一端与所述第一半导体312接触,另一端与所述第二晶体管32的栅极,即所述第二栅极321电连接。其中,所述第一漏极314通过贯穿所述第三绝缘层43和所述第二绝缘层42的过孔3141与所述第二栅极321实现电连接。Further, the first source electrode 313, the first drain electrode 314, the second source electrode 323 and the second drain electrode 324 are formed on the third insulating layer 43 at intervals, the first The source electrode 313, the first drain electrode 314, the second source electrode 323, and the second drain electrode 324 may be simultaneously patterned from the same conductive material, for example, aluminum, silver, gold, or alloys thereof and other conductive materials form. The first source electrode 313 and the first drain electrode 314 are respectively located on two opposite sides of the first semiconductor 312, and respectively pass through the via hole 431, the via hole 432 that penetrate the third insulating layer 43 and the The first semiconductor 312 is in contact. Optionally, one end of the first drain 314 is in contact with the first semiconductor 312, and the other end is electrically connected to the gate of the second transistor 32, that is, the second gate 321. Wherein, the first drain 314 is electrically connected to the second gate 321 through a via 3141 penetrating the third insulating layer 43 and the second insulating layer 42.
所述第二源极323和所述第二漏极324对应位于所述第二半导体322的两相对侧,并分别通过贯穿所述第三绝缘层43的过孔433、过孔434以与所述第二半导体322电连接。所述电源线221与所述第二源极323同层设置,且电连接,其中,所述电源线221通过过孔2211与所述电源引导线22电连接。在本实施例中,所述第一漏极314与所述第二漏极324之间形成一存储电容C(如图2),从而为所述第二晶体管32提供稳定的工作电流和/工作电压。The second source electrode 323 and the second drain electrode 324 are respectively located on two opposite sides of the second semiconductor 322, and respectively pass through the via hole 433 and the via hole 434 penetrating the third insulating layer 43 The second semiconductor 322 is electrically connected. The power supply line 221 and the second source electrode 323 are provided on the same layer and are electrically connected. The power supply line 221 is electrically connected to the power supply guide line 22 through a via 2211. In this embodiment, a storage capacitor C (as shown in FIG. 2) is formed between the first drain 314 and the second drain 324, so as to provide a stable operating current and/or operation for the second transistor 32 Voltage.
进一步地,所述保护层44形成于所述数据线23、所述第一源极313、所述第一漏极314、所述第二源极323、所述第二漏极324、所述电源线221及所述第三绝缘层43上,用于封装保护。所述平坦化层45形成于所述保护层44上,用以形成平坦的平面。可选地,所述平坦化层45上形成有公共电极50,所述公共电极50通过过孔51与所述第二晶体管32的漏极电连接,其中,所述有机发光单元1的阳极与所述公共电极50电连接,从而实现所述薄膜晶体管单元30与所述有机发光单元1电连接。Further, the protective layer 44 is formed on the data line 23, the first source electrode 313, the first drain electrode 314, the second source electrode 323, the second drain electrode 324, the The power line 221 and the third insulating layer 43 are used for packaging protection. The planarization layer 45 is formed on the protection layer 44 to form a flat plane. Optionally, a common electrode 50 is formed on the planarization layer 45, and the common electrode 50 is electrically connected to the drain of the second transistor 32 through a via 51, wherein the anode of the organic light-emitting unit 1 is The common electrode 50 is electrically connected, so that the thin film transistor unit 30 and the organic light emitting unit 1 are electrically connected.
可以理解地是,层与层之间的电连接可采用层与层之间的过孔进行电连接,在贯穿绝缘层的过孔中填充金属导电材料,即可实现层与层之间的电连接,例如,过孔中的填充金属与过孔上方对应的金属导电层是同一金属材质。当然,在一些实施例中,层与层之间的电连接还可以采用连接排布线进行电连接。It is understandable that the electrical connection between layers can be electrically connected by using vias between layers. Filling the vias penetrating the insulating layer with a metal conductive material can realize the electrical connection between the layers For connection, for example, the filling metal in the via and the corresponding metal conductive layer above the via are made of the same metal material. Of course, in some embodiments, the electrical connection between layers can also be performed by using connection line wiring.
在一些实施例中,所述电传输层20通过层与层之间的过孔为所述薄膜晶体管单元30提供电源支持。多个所述薄膜晶体管单元30呈阵列设置于所述电传输层20之上,以对应驱动控制显示面板200的多个所述有机发光单元1,其中的多个所述有机发光单元1界定形成该显示面板200的显示区域。In some embodiments, the electrical transmission layer 20 provides power support for the thin film transistor unit 30 through vias between layers. A plurality of the thin film transistor units 30 are arranged in an array on the electrical transmission layer 20 to correspondingly drive and control the plurality of organic light emitting units 1 of the display panel 200, wherein the plurality of organic light emitting units 1 are defined and formed The display area of the display panel 200.
在一些实施例中,所述栅极引导线21及所述电源引导线22之间是绝缘隔离设置的,且他们之间相互配合,以形成层状结构。可以理解地是,所述电传输层20可以通过溅射、蒸镀、气相沉积、蚀刻等生产工艺而制备。可选地,所述栅极引导线21为相互间隔分布的条状结构,所述电源引导线22连结为层状结构,例如,镀设一电源引导层,在该电源引导层上分别蚀刻出绝缘沟道并填充绝缘材质,即绝缘沟道围成所述栅极引导线21,从而实现所述电源引导线22与所述栅极引导线21绝缘设置。在一较佳实施方式中,所述栅极引导线21和所述电源引导线22同一导电层同时图案化形成。In some embodiments, the gate guide line 21 and the power guide line 22 are provided with insulation isolation, and they cooperate with each other to form a layered structure. It is understandable that the electrical transmission layer 20 can be prepared by production processes such as sputtering, evaporation, vapor deposition, and etching. Optionally, the gate guide lines 21 are strip structures distributed at intervals, and the power guide lines 22 are connected in a layered structure, for example, a power guide layer is plated, and the power guide layers are etched separately An insulating channel is filled with an insulating material, that is, the insulating channel surrounds the gate guide line 21, so that the power guide line 22 is insulated from the gate guide line 21. In a preferred embodiment, the gate conductive line 21 and the power conductive line 22 are simultaneously patterned on the same conductive layer.
进一步地,所述电源引导线22为栅格层状。所述电源引导线22设置为栅格状,一方面能够节约生产用料,另一方面有利于减少所述电源引导线22的内应力。特别地,当柔性显示面板200弯曲时,所述电源引导线22能够更好地弯曲,且内部产生的应力小,从而增强产品弯曲性能。Further, the power guide wire 22 has a grid layer shape. The power guide wire 22 is arranged in a grid shape, on the one hand, it can save production materials, and on the other hand, it is beneficial to reduce the internal stress of the power guide wire 22. In particular, when the flexible display panel 200 is bent, the power guide wire 22 can be bent better, and the stress generated inside is small, thereby enhancing the bending performance of the product.
在一些实施例中,如图4,所述电传输层20包括多根所述栅极引导线21,所述栅极引导线21为对应的一个或多个所述薄膜晶体管单元30提供栅极工作电流和/或工作电压。每一所述栅极引导线21对应与一条所述栅极线211电连接,通过所述栅极引导线21实现所述栅极线211与位于所述非显示区域102的所述外部控制电路连接。In some embodiments, as shown in FIG. 4, the electrical transmission layer 20 includes a plurality of the gate guide lines 21, and the gate guide lines 21 provide gates for the corresponding one or more thin film transistor units 30 Working current and/or working voltage. Each gate guide line 21 is electrically connected to one gate line 211 correspondingly, and the gate line 211 and the external control circuit located in the non-display area 102 are realized through the gate guide line 21 connection.
由于本实施方式的所述非显示区域102所在的所述显示面板200的一侧与所述栅极线211排列的方向相平行,因此,排列在所述显示区域101内的多条所述栅极线211与所述非显示区域102的距离各不相同,从而,导致所述栅极引导线21被设置为长短不一致,当所述栅极引导线21长短不一致设置时,长的所述栅极引导线21比短的所述栅极引导线21宽大。Since one side of the display panel 200 where the non-display area 102 is located in this embodiment is parallel to the direction in which the gate lines 211 are arranged, a plurality of the grids arranged in the display area 101 The distance between the epipolar line 211 and the non-display area 102 is different. As a result, the gate guide lines 21 are set to have different lengths. When the gate guide lines 21 have different lengths, the length of the gate The electrode guide line 21 is wider than the short gate guide line 21.
多条所述栅极引导线21按长短次序依次排列,可以是从所述显示区域101的一侧起,多条所述栅极引导线21按长短次序依次排列,也可以是从所述显示区域101的两侧起,按长短次序依次排列。当从所述显示区域101的两侧起,按长短次序依次排列时,具体为,最短的所述栅极引导线21位于所述显示区域101的中央,从中央向两侧排列的所述栅极引导线21越来越长。此时,所述电源引导线22包括两部分,位于未设置有所述栅极引导线21的区域的部分呈栅格状,位于设置有所述栅极引导线21的区域的部分呈条状。其中,条状部分的所述电源引导线22与所述栅极引导线21平行间隔设置。A plurality of the gate guide lines 21 are sequentially arranged in the order of length, which may be from the side of the display area 101, a plurality of the gate guide lines 21 are arranged in the order of length, or may be arranged from the display The two sides of the area 101 are arranged in order of length. When arranged from the two sides of the display area 101 in order of length, specifically, the shortest gate guide line 21 is located in the center of the display area 101, and the gates arranged from the center to both sides The pole guide line 21 is getting longer. At this time, the power supply guide line 22 includes two parts, a portion located in a region where the gate guide line 21 is not provided is grid-shaped, and a portion located in a region where the gate guide line 21 is provided is strip-shaped . Wherein, the power supply guide line 22 of the strip-shaped portion is arranged parallel to the gate guide line 21 at intervals.
可以理解地是,当所述栅极引导线21为相同长度时,所述栅极引导线21应该是相同大小的宽度,以保证电信号稳定一致。所述栅极引导线21为长短不一致设置时,为保证其能够提供稳定一致的电信号,长的所述栅极引导线21比短的所述栅极引导线21宽大。长的所述栅极引导线21能够将电信号传输至显示面板200的其他更远区域,但因其传输距离长,阻抗相对比较大,故而需要宽大化设计的所述栅极引导线21;短的所述栅极引导线21能够将电信号传输至显示面板200的其他更近区域,但因其传输距离短,阻抗相对比较小,故而需要窄小化设计的栅极引导线21,以此保证长短不一致的所述栅极引导线21能够提供多路稳定一致的电信号,从而保证产品稳定性。其中,部分所述栅极引导线21长,且宽大,不仅能够降低生产工艺难度,提高生产质量,以保证该部分所述栅极引导线21能够提供稳定一致的电信号,从而保证产品稳定性。Understandably, when the gate guide lines 21 are the same length, the gate guide lines 21 should have the same width to ensure that the electrical signals are stable and consistent. When the gate guide lines 21 are provided with inconsistent lengths, to ensure that they can provide stable and consistent electrical signals, the long gate guide lines 21 are wider than the short gate guide lines 21. The long gate guide line 21 can transmit electrical signals to other farther areas of the display panel 200, but because of its long transmission distance and relatively large impedance, the gate guide line 21 needs to be wider in design; The short gate guide line 21 can transmit electrical signals to other closer areas of the display panel 200, but due to its short transmission distance and relatively low impedance, the gate guide line 21 needs to be narrowed to This ensures that the gate guide lines 21 with different lengths can provide multiple stable and consistent electrical signals, thereby ensuring product stability. Among them, some of the gate guide lines 21 are long and wide, which can not only reduce the difficulty of the production process and improve production quality, so as to ensure that the gate guide lines 21 can provide stable and consistent electrical signals, thereby ensuring product stability .
请参阅图5,本申请其中一实施例提供一种第一晶体管31的源极连接线,即所述数据线23的排布示意图。所述薄膜晶体管单元30中的第一晶体管31的源极通过所述数据线23以能够为所述薄膜晶体管单元30 提供数据电信号。所述第一晶体管31的源极通过数据线23与所述外部控制电路连接,从而驱动控制所述薄膜晶体管单元30。可以理解地是,所述数据线23、所述栅极引导线21、所述电源引导线22均相互绝缘,且均自所述显示面板200的同一侧(即位于所述显示区域101一侧的所述非显示区域102)引出以与所述外部控制电路电连接。其中,所述栅极引导线21与所述电源引导线22同层设置,可由同一导电材料同时图案化形成。所述数据线23可与所述第一源极313同层设置,所述数据线23、所述第一漏极314、所述第二源极323及所述第二漏极324由同一导电材料同时图案化形成。Please refer to FIG. 5. One embodiment of the present application provides a schematic diagram of the arrangement of the source connection line of the first transistor 31, that is, the data line 23. The source of the first transistor 31 in the thin film transistor unit 30 passes through the data line 23 to provide a data electrical signal for the thin film transistor unit 30. The source of the first transistor 31 is connected to the external control circuit through the data line 23 to drive and control the thin film transistor unit 30. It can be understood that the data line 23, the gate guide line 21, and the power guide line 22 are all insulated from each other, and are all from the same side of the display panel 200 (that is, located on the side of the display area 101 The non-display area 102) is led out to be electrically connected to the external control circuit. Wherein, the gate guide line 21 and the power guide line 22 are arranged in the same layer, and can be formed by patterning the same conductive material at the same time. The data line 23 may be disposed in the same layer as the first source electrode 313, and the data line 23, the first drain electrode 314, the second source electrode 323, and the second drain electrode 324 are electrically conductive The material is simultaneously patterned.
进一步地,所述阵列基板100还包括覆晶薄膜结构(图未示)。所述覆晶薄膜结构位于所述非显示区102,并与所述栅极引导线21、所述电源引导线22、所述第一晶体管31的数据线23电连接。Further, the array substrate 100 further includes a flip-chip thin film structure (not shown). The flip-chip thin film structure is located in the non-display area 102, and is electrically connected to the gate guide line 21, the power guide line 22, and the data line 23 of the first transistor 31.
所述外部控制电路与所述覆晶薄膜结构通信连接,从而逻辑控制所述薄膜晶体管单元30。可以理解地是,所述覆晶薄膜结构上还可以连接其他的IC芯片,以辅助所述外部控制电路对所述薄膜晶体管单元30进行逻辑控制,以使得连接于所述薄膜晶体管单元30上的有机发光单元1能够正常出光显示。The external control circuit is communicatively connected to the flip-chip thin film structure, thereby logically controlling the thin film transistor unit 30. Understandably, other IC chips may be connected to the flip-chip thin film structure to assist the external control circuit to logically control the thin film transistor unit 30, so that the thin film transistor unit 30 is connected to The organic light emitting unit 1 can normally emit light for display.
在一些实施例中,所述阵列基板100还包括静电释放结构70(如图1)。所述静电释放结构70连接于所述电传输层20以释放静电。所述静电释放结构70设置于与所述多条栅极引导线21和所述多条数据线23引出方向相反的一侧的所述非显示区域102内。In some embodiments, the array substrate 100 further includes an electrostatic discharge structure 70 (see FIG. 1). The electrostatic discharge structure 70 is connected to the electrical transmission layer 20 to discharge static electricity. The electrostatic discharge structure 70 is disposed in the non-display area 102 on the side opposite to the drawing direction of the plurality of gate guide lines 21 and the plurality of data lines 23.
基于上述的显示面板200,本申请实施例还提出一种显示装置。所述显示装置包括所述显示面板200。可以理解地是,所述显示装置包括但不限于智能手机、平板电脑、PC端电脑或智能电视等显示装置。Based on the above display panel 200, an embodiment of the present application further proposes a display device. The display device includes the display panel 200. It can be understood that the display device includes but is not limited to a display device such as a smart phone, a tablet computer, a PC computer, or a smart TV.
上述实施例为本申请示例性的实施例,但本申请的实施例并不受上 述实施例的限制,其他的任何未背离本申请的精神实质与原理下所作的改变、修饰、替代、组合、简化,均应为等效的置换方式,都包含在本申请的保护范围之内。The above-mentioned embodiments are exemplary embodiments of the present application, but the embodiments of the present application are not limited by the above-mentioned embodiments, and any other changes, modifications, substitutions, combinations, changes, modifications, substitutions, combinations, etc. made without departing from the spirit and principles of the present application Simplified, all should be equivalent replacement methods, all included in the scope of protection of this application.

Claims (16)

  1. 一种阵列基板,其特征在于,包括:An array substrate is characterized by comprising:
    基底,具有显示区域和位于所述显示区域外的非显示区域;A substrate having a display area and a non-display area outside the display area;
    多条栅极线,设置于所述显示区域内,且间隔成行排列;A plurality of gate lines are arranged in the display area and are arranged in rows at intervals;
    多条数据线,设置于所述显示区域内,且间隔成列排列,所述多条数据线与所述多条栅极线垂直不相交,所述多条栅极线与所述多条数据线共同界定出所述显示区域;以及A plurality of data lines are arranged in the display area and are arranged in columns at intervals. The plurality of data lines are perpendicular to the plurality of gate lines and do not intersect each other. The plurality of gate lines and the plurality of data The lines together define the display area; and
    电传输层,设置于所述显示区域内,所述电传输层包括多条栅极引导线,所述多条栅极引导线分别与所述多条栅极线电连接,从而所述多条栅极线通过所述多条栅极引导线与外部控制电路电连接,所述多条栅极引导线与所述多条数据线均从所述显示区域的同一侧引出至所述非显示区域以与所述外部控制电路电连接。An electric transmission layer is disposed in the display area, the electric transmission layer includes a plurality of gate guide lines, and the plurality of gate guide lines are electrically connected to the plurality of gate lines, respectively, so that the plurality of The gate lines are electrically connected to the external control circuit through the plurality of gate guide lines, and the plurality of gate guide lines and the plurality of data lines are drawn from the same side of the display area to the non-display area To be electrically connected to the external control circuit.
  2. 根据权利要求1所述的阵列基板,其特征在于,所述阵列基板还包括设置于所述显示区域内的多条电源线,所述电传输层还包括电源引导线,用于将所述电源线与所述外部控制电路实现电连接,所述电源引导线设置于所述显示区域内,且与所述多条栅极引导线、所述多条数据线从所述显示区域的同一侧引出以与所述外部控制电路电连接。The array substrate according to claim 1, wherein the array substrate further includes a plurality of power lines disposed in the display area, and the electrical transmission layer further includes a power guide line for connecting the power supply The line is electrically connected to the external control circuit, the power supply guide line is provided in the display area, and is led out from the same side of the display area as the plurality of gate guide lines and the plurality of data lines To be electrically connected to the external control circuit.
  3. 根据权利要求2所述的阵列基板,其特征在于,所述电源引导线设置为栅格状。The array substrate according to claim 2, wherein the power guide line is provided in a grid shape.
  4. 根据权利要求2所述的阵列基板,其特征在于,所述电源引导线包括两部分,所述电源引导线位于未设置有所述栅极引导线的区域的部分呈栅格状,所述电源引导线位于设置有所述栅极引导线的区域的部分呈条状。The array substrate according to claim 2, wherein the power supply guide line includes two parts, and a portion of the power supply guide line in a region where the gate guide line is not provided is grid-shaped, and the power supply The portion of the guide line located in the area where the gate guide line is provided has a bar shape.
  5. 根据权利要求1所述的阵列基板,其特征在于,所述多条栅极 引导线间隔分布为条状结构,所述多条栅极引导线与所述多条数据线平行不共面。The array substrate according to claim 1, wherein the plurality of gate guide lines are distributed in a stripe structure at intervals, and the plurality of gate guide lines are parallel to the plurality of data lines and are not coplanar.
  6. 根据权利要求5所述的阵列基板,其特征在于,所述多条栅极引导线长短不一致设置,长的所述栅极引导线比短的所述栅极引导线宽大。The array substrate according to claim 5, wherein the lengths of the plurality of gate guide lines are not uniform, and the long gate guide line is wider than the short gate guide line.
  7. 根据权利要求6所述的阵列基板,其特征在于,所述多条栅极引导线按长短次序依次排列。The array substrate according to claim 6, wherein the plurality of gate guide lines are arranged in order of length.
  8. 根据权利要求7所述的阵列基板,其特征在于,所述多条栅极引导线最短的位于所述显示区域中央,从所述显示区域中央分别向两侧排列的所述栅极引导线越来越长。The array substrate according to claim 7, wherein the shortest of the plurality of gate guide lines is located in the center of the display area, and the gate guide lines arranged from the center of the display area to the two sides Come longer.
  9. 根据权利要求1所述的阵列基板,其特征在于,还包括多个薄膜晶体管单元及多条电源线,所述多个薄膜晶体管单元呈矩阵排列在所述显示区域内,相邻的两条所述栅极线与相邻的两条所述数据线围成的区域定义出一个像素单元,每一所述薄膜晶体管单元对应位于一所述像素单元内,每一所述薄膜晶体管单元均与对应的一所述栅极线、一所述数据线及一所述电源线电连接。The array substrate according to claim 1, further comprising a plurality of thin film transistor units and a plurality of power lines, the plurality of thin film transistor units are arranged in a matrix in the display area, two adjacent A region surrounded by the gate line and two adjacent data lines defines a pixel unit, each of the thin film transistor units corresponds to a pixel unit, and each of the thin film transistor units corresponds to The gate line, the data line, and the power line are electrically connected.
  10. 根据权利要求9所述的阵列基板,其特征在于,还包括第一绝缘层,所述电传输层形成于所述基底表面,所述第一绝缘层形成于所述电传输层远离所述基底的一侧,所述多个薄膜晶体管单元形成于所述第一绝缘层远离所述电传输层的一侧,从而所述第一绝缘层使所述电传输层与所述多个薄膜晶体管单元相互绝缘。The array substrate according to claim 9, further comprising a first insulating layer, the electrical transmission layer is formed on the surface of the base, and the first insulating layer is formed on the electrical transmission layer away from the base On the side of the first thin film transistor unit, the plurality of thin film transistor units are formed on the side of the first insulating layer away from the electrical transmission layer, so that the first insulating layer allows the electrical transmission layer and the multiple thin film transistor units Insulated from each other.
  11. 根据权利要求10所述的阵列基板,其特征在于,每一所述薄膜晶体管单元包括一第一晶体管及一第二晶体管;每一所述第一晶体管的栅极与相邻的一所述栅极线电连接,源极与相邻的一所述数据线电连接,以及漏极与同一所述薄膜晶体管单元中的所述第二晶体管的栅极电 连接;每一所述第二晶体管的源极与一所述电源线电连接,漏极用于与一有机发光单元连接。The array substrate according to claim 10, wherein each of the thin film transistor units includes a first transistor and a second transistor; the gate of each first transistor and an adjacent one of the gates An electrode line is electrically connected, a source electrode is electrically connected to an adjacent one of the data lines, and a drain electrode is electrically connected to the gate of the second transistor in the same thin film transistor unit; The source electrode is electrically connected to a power line, and the drain electrode is used to connect to an organic light emitting unit.
  12. 根据权利要求11所述的阵列基板,其特征在于,还包括第二绝缘层、第三绝缘层及保护层,所述第一晶体管的栅极及所述第二晶体管的栅极相互隔离设置于所述第一绝缘层远离所述电传输层的一侧,所述第二绝缘层覆盖于所述第一晶体管的栅极、所述第二晶体管的栅极和所述第一绝缘层远离所述基底的一侧,所述第一晶体管的通道层及所述第二晶体管的通道层相互隔离设置于所述第二绝缘层远离所述基底的一侧,所述第三绝缘层覆盖于所述第一晶体管的通道层、所述第二晶体管的通道层和所述第二绝缘层远离所述基底的一侧,所述第一晶体管的源极、漏极和所述第二晶体管的源极、漏极间隔形成于所述第三绝缘层远离所述基底的一侧,所述保护层覆盖于所述第一晶体管的源极、漏极和所述第二晶体管的源极、漏极远离所述基底的一侧。The array substrate according to claim 11, further comprising a second insulating layer, a third insulating layer and a protective layer, the gate of the first transistor and the gate of the second transistor are isolated from each other The first insulating layer is away from the side of the electrical transmission layer, and the second insulating layer covers the gate of the first transistor, the gate of the second transistor, and the first insulating layer away from the On one side of the substrate, the channel layer of the first transistor and the channel layer of the second transistor are isolated from each other on the side of the second insulating layer away from the substrate, and the third insulating layer covers the A channel layer of the first transistor, a channel layer of the second transistor, and a side of the second insulating layer away from the substrate, a source, a drain of the first transistor, and a source of the second transistor A gap between the electrode and the drain is formed on a side of the third insulating layer away from the substrate, and the protective layer covers the source and drain of the first transistor and the source and drain of the second transistor The side away from the substrate.
  13. 根据权利要求1所述的阵列基板,其特征在于,所述非显示区域包括分别位于所述显示区域两相对侧的两部分,所述非显示区域所在的所述显示区域的两侧均与所述数据线延伸的方向相垂直,同时与所述栅极线延伸的方向相平行,所述多条栅极引导线与所述多条数据线均从其中一侧的所述非显示区域引出以与所述外部控制电路电连接。The array substrate according to claim 1, wherein the non-display area includes two parts respectively located on two opposite sides of the display area, and both sides of the display area where the non-display area is located are The extending direction of the data line is perpendicular and parallel to the extending direction of the gate line, and the plurality of gate guide lines and the plurality of data lines are drawn from the non-display area on one side to It is electrically connected to the external control circuit.
  14. 根据权利要求13所述的阵列基板,其特征在于,还包括静电释放结构,所述静电释放结构设置于与所述多条栅极引导线和所述多条数据线的引出方向相反的一侧的所述非显示区域内,所述静电释放结构连接于所述电传输层以释放静电。The array substrate according to claim 13, further comprising an electrostatic discharge structure, the electrostatic discharge structure being disposed on a side opposite to a drawing direction of the plurality of gate guide lines and the plurality of data lines In the non-display area, the electrostatic discharge structure is connected to the electrical transmission layer to discharge static electricity.
  15. 一种显示面板,其特征在于,包括如权利要求1至14任一项所述的阵列基板。A display panel, comprising the array substrate according to any one of claims 1 to 14.
  16. 一种显示装置,其特征在于,包括如权利要求15所述的显示 面板。A display device comprising the display panel according to claim 15.
PCT/CN2018/125720 2018-12-29 2018-12-29 Array substrate, display panel, and display device WO2020133446A1 (en)

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