CN207134358U - Display panel and display device - Google Patents
Display panel and display device Download PDFInfo
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- CN207134358U CN207134358U CN201721184968.XU CN201721184968U CN207134358U CN 207134358 U CN207134358 U CN 207134358U CN 201721184968 U CN201721184968 U CN 201721184968U CN 207134358 U CN207134358 U CN 207134358U
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Abstract
A kind of display panel and display device.The display panel includes：Underlay substrate；The pixel cell being arranged on the underlay substrate, the pixel cell include drive circuit layer；And the metal level of the patterning between the drive circuit layer and the underlay substrate, the metal level include at least being used for the Part I for connecting the display panel voltage source voltage signal.The metal level can reduce the transmission resistance of power supply voltage signal, so as to reduce power supply voltage signal in pressure drop caused by transmission so that the display brightness of each position of display panel is more accurate.
Description
Technical field
Embodiment of the disclosure is related to a kind of display panel and display device.
Background technology
Organic electroluminescence display panel has the advantages that self-luminous, reaction is fast, visual angle is wide, brightness is high, color is gorgeous, frivolous, because
This turns into a kind of important Display Technique.
At present, organic electroluminescence display panel just develops toward screen enlarging, but the show uniformity of organic electroluminescence display panel
Often it is affected greatly with the change of its size.The size of display panel is bigger, the power supply electricity of each pixel cell of display panel
The path of the signal transmission such as pressure is longer, and the resistance that signal transmission is subject to is bigger, therefore in the signal difference of display panel diverse location
It is different bigger, and then cause the show uniformity of display panel to be deteriorated.
Utility model content
A disclosure at least embodiment provides a kind of display panel, including：Underlay substrate；It is arranged on the underlay substrate
Pixel cell, the pixel cell includes drive circuit layer；Between the drive circuit layer and the underlay substrate
The metal level of patterning, the metal level include at least being used for the Part I for connecting the display panel voltage source voltage signal.
For example, in the display panel that a disclosure at least embodiment provides, it is the pixel that the drive circuit layer, which includes,
Unit provides the power line of power supply voltage signal, and the Part I is electrically connected to each other with the power line.
For example, in the display panel that a disclosure at least embodiment provides, the power line includes source and drain Conductive layer portions.
For example, in the display panel that a disclosure at least embodiment provides, the drive circuit layer includes electric capacity and film
Transistor；Wherein, the electric capacity includes the first pole and the second pole, and the metal level also includes few with the first best of the electric capacity
The Part II of part face.
For example, in the display panel that a disclosure at least embodiment provides, second pole and the second of the metal level
Part electrically connects.
For example, a disclosure at least embodiment provide display panel in, the metal level also include at least with it is described thin
The Part III of orthographic projection face of the channel region of film transistor on the underlay substrate.
For example, in the display panel that a disclosure at least embodiment provides, the display panel includes viewing area and periphery
Region, the Part I of the metal level are located in the viewing area, and the metal level also includes being located at the neighboring area
In Part IV.
For example, in the display panel that a disclosure at least embodiment provides, the display panel also includes being located at the lining
Barrier layer and cushion on substrate and under the drive circuit layer；Wherein, the metal level is arranged at the barrier layer
And between the cushion.
A disclosure at least embodiment provides a kind of display device, including any of the above-described described display panel.
The metal level included by display panel that a disclosure at least embodiment provides can reduce power supply voltage signal
Resistance is transmitted, so as to reduce power supply voltage signal in pressure drop caused by transmission, and then reduces display panel supply voltage everywhere
The difference of signal so that the display brightness of each position of display panel is more accurate, is finally reached raising display panel and shows
The technique effect of even property.
Brief description of the drawings
In order to illustrate more clearly of the technical scheme of the embodiment of the present disclosure, the accompanying drawing of embodiment will be simply situated between below
Continue, it should be apparent that, drawings in the following description merely relate to some embodiments of the present disclosure, rather than the limitation to the disclosure.
Figure 1A is a kind of schematic diagram of 2T1C image element circuits, and Figure 1B is the schematic diagram of another 2T1C image element circuits；
Fig. 2 is the schematic diagram one for the display panel that the embodiment of the disclosure one provides；
Fig. 3 A-3C are the schematic diagram two for the display panel that the embodiment of the disclosure one provides；
Fig. 4 is the manufacturing process flow diagram for the display panel that the embodiment of the disclosure one provides；
Fig. 5 A- Fig. 5 C, Fig. 6-Figure 11 are the sectional view of the display panel of the embodiment of the disclosure one offer in the fabrication process.
Reference：
10- first areas；20- second areas；The regions of 30- the 3rd；101- underlay substrates；102- drive circuit layers；103A-
Part I；103B- Part II；The vias of 1031- first；The vias of 1032- the 3rd；203- Part III；The mistakes of 2031- the 4th
Hole；The vias of 2032- the 5th；303- Part IV；The vias of 3031- second；The vias of 3032- the 6th；The vias of 3033- the 7th；1011-
Barrier layer；1021- cushions；1022- active layers；The gate insulation layers of 1023- first；1024 (1024A/1024B/1024C)-the first
Grid conductive layer；The gate insulation layers of 1025- second；1026 (1026A/1026B)-the second grid conductive layer；1027- insulating barriers；1028
(1028A/1028B/1028C)-source and drain conductive layer；104- planarization layers；105- pixel electrode layers；106- pixel defining layers；
107- luminescent layers；108- spacer materials；Public electrode 109.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present disclosure clearer, below in conjunction with the embodiment of the present disclosure
Accompanying drawing, the technical scheme of the embodiment of the present disclosure is clearly and completely described.Obviously, described embodiment is this public affairs
The part of the embodiment opened, rather than whole embodiments.Based on described embodiment of the disclosure, ordinary skill
The every other embodiment that personnel are obtained on the premise of without creative work, belong to the scope of disclosure protection.
Unless otherwise defined, the technical term or scientific terminology that the disclosure uses, which are should be in disclosure art, to be had
The ordinary meaning that the personage for having general technical ability is understood." first ", " second " and the similar word used in the disclosure is simultaneously
Any order, quantity or importance are not indicated that, and is used only to distinguish different parts." comprising " or "comprising" etc.
Either object covers the element or object for appearing in the word presented hereinafter to the element that similar word means to occur before the word
And its it is equivalent, and it is not excluded for other elements or object.The similar word such as " connection " or " connected " is not limited to physics
Or mechanical connection, but electrical connection can be included, it is either directly or indirect." on ", " under ",
"left", "right" etc. is only used for representing relative position relation, and after the absolute position for being described object changes, then the relative position is closed
System may also correspondingly change.
Whether the image element circuit in OLED display panel typically uses matrix driving mode, draw according in each pixel cell
Enter switching component and be divided into driven with active matrix and passive waked-up.Usual Activematric OLED (AMOLED) is in each picture
A cluster film transistor and storage capacitance are all integrated with the image element circuit of plain unit, by thin film transistor (TFT) and storage capacitance
Drive control, the control of the electric current to flowing through OLED is realized, so that OLED lights as needed.
The basic pixel circuit used in AMOLED display panels is usually 2T1C image element circuits, that is, utilizes two film crystalline substances
Body pipe (TFT) and a storage capacitance Cs realize the luminous basic functions of driving OLED.Figure 1A and Figure 1B is respectively to show
The schematic diagram of two kinds of 2T1C image element circuits.
As shown in Figure 1A, a kind of 2T1C image element circuits include switching transistor T0, driving transistor N0 and storage capacitance
Cs.For example, switching transistor T0 grid connects scan line to receive scanning signal Scan1, such as source electrode is connected to data
For line to receive data-signal Vdata, drain electrode is connected to driving transistor N0 grid；Driving transistor N0 source electrode is connected to
For one voltage end to receive first voltage Vdd (high voltage), drain electrode is connected to OLED positive terminal；Storage capacitance Cs one end connection
To switching transistor T0 drain electrode and driving transistor N0 grid, the other end be connected to driving transistor N0 source electrode and
Power line, it is thus connected to first voltage end Vdd；OLED negative pole end is connected to second voltage end to receive second voltage Vss
(low-voltage, such as ground voltage).The type of drive of the 2T1C image element circuits is the light and shade (GTG) by pixel via two TFT
Controlled with storage capacitance Cs.When applying scanning signal Scan1 by scan line to open switching transistor T0, data-driven
The data-signal Vdata that circuit is sent into by data wire will charge via switching transistor T0 to storage capacitance Cs, thus by number
It is believed that a number Vdata is stored in storage capacitance Cs, and the data-signal Vdata control driving transistors N0 of this storage conducting journey
Spend, thus controlling stream overdrives transistor to drive the luminous size of current of OLED, i.e. this electric current determines the ash of the pixel light emission
Rank.In the 2T1C image element circuits shown in Figure 1A, switching transistor T0 is N-type transistor and driving transistor N0 is P-type crystal
Pipe.
As shown in Figure 1B, another 2T1C image element circuits also include switching transistor T0, driving transistor N0 and storage
Electric capacity Cs, but its connected mode is slightly changed, and driving transistor N0 is N-type transistor.Figure 1B image element circuit relative to
Include in place of Figure 1A change：OLED positive terminal is connected to power line and is thus connected to first voltage end Vdd, to receive first
Voltage Vdd (high voltage), and negative pole end is connected to driving transistor N0 drain electrode, driving transistor N0 source electrode is connected to second
Voltage end is to receive second voltage Vss (low-voltage, such as ground voltage).Storage capacitance Cs one end is connected to switching transistor
T0 drain electrode and driving transistor N0 grid, the other end are connected to driving transistor N0 source electrode and second voltage end.
The working method of the 2T1C image element circuits is substantially essentially identical with the image element circuit shown in Figure 1A, repeats no more here.
In addition, the image element circuit shown in for Figure 1A and Figure 1B, switching transistor T0 is not limited to N-type transistor, can also
For P-type transistor, thus control the scanning signal that the scan control end Scan1 of its on or off provides polarity carry out it is corresponding
Ground changes.In addition, industry also provides other on the basis of above-mentioned 2T1C basic pixel circuit has compensation function
Image element circuit, compensation function can be realized by voltage compensation, current compensation or mixed compensation, or compensation function can be with
Realized by internal compensation, external compensation etc., the image element circuit with compensation function for example can be 4T1C, 4T2C, 7T1C
Deng I will not elaborate.
In order to reduce the transmission resistance of power supply voltage signal in display panel, display panel can for example set double-deck source and drain
Conductive layer (i.e. the conductive layer of the source-drain electrode including thin film transistor (TFT)) is for forming power line, therefore relative to one layer
There is smaller power supply voltage signal transmission resistance, so as to reduce power supply electricity for the display panel of the power line of source and drain conductive layer
The resistance drop of signal is pressed, and then reduces the difference of display panel power supply voltage signal everywhere, there is display panel more preferable
Show uniformity.However, for one layer of source and drain conductive layer of more increases in display panel, it is also necessary to correspondingly increase by one layer of insulation
Layer, therefore in the manufacturing process of the display panel, at least to increase Twi-lithography technique and form the increase extra source and drain
Conductive layer, this causes, and the manufacturing process of display panel is more complicated, cost is higher.
A disclosure at least embodiment provides a kind of display panel, including：Underlay substrate；The picture being arranged on underlay substrate
Plain unit, the pixel cell include drive circuit layer；The metal level of patterning between drive circuit layer and underlay substrate,
The metal level includes at least being used for the Part I for connecting display panel voltage source voltage signal.
A disclosure at least embodiment provides a kind of manufacture method of display panel, including：Figure is formed on underlay substrate
The metal level of case；Pixel cell is formed on the metal layer, and the pixel cell includes drive circuit layer；Wherein, metal level includes
At least it is used for the Part I for connecting display panel voltage source voltage signal.
A disclosure at least embodiment provides a kind of display device, including display panel, the display panel include：Substrate base
Plate；The pixel cell being arranged on underlay substrate, the pixel cell include drive circuit layer；Positioned at drive circuit layer and substrate base
The metal level of patterning between plate, the metal level include at least being used for first that connects display panel voltage source voltage signal
Point.
The display panel and its manufacture method of the disclosure are illustrated below by several specific embodiments.
Embodiment one
The present embodiment provides a kind of display panel, and the display panel includes multiple pixel cells, and each pixel cell includes
Light emitting diode and corresponding image element circuit, the image element circuit can for example use or based on any of the above-described image element circuits.
For example retouched below so that a pole of the storage capacitance in image element circuit is connected by power line with power voltage terminal Vdd as an example
State, but the present embodiment is not restricted to this.
As shown in Fig. 2 the display panel includes：Underlay substrate 101；The pixel cell being arranged on underlay substrate, the picture
Plain unit includes drive circuit layer 102；The display panel also includes between drive circuit layer 102 and underlay substrate 101
The metal level of patterning, the metal level include at least being used for the Part I 103A for connecting display panel voltage source voltage signal.
In the present embodiment, as shown in figs. 3 a-3 c, display panel can for example include viewing area and neighboring area, display
Area includes pixel cell includes various signal wires etc. for display, neighboring area, and wherein viewing area is for example including first area
10 and second area 20, neighboring area is for example including the 3rd region 30.
For example it could be formed with the present embodiment, in drive circuit layer 102 for driving multiple films of display panel brilliant
The structures such as body pipe, electric capacity, grid line, data wire, power line；It is brilliant that the plurality of thin film transistor (TFT) can include driving transistor, switch
Among body pipe etc., grid line, data wire, power line etc. extends to neighboring area from viewing area, and thus with gate drive circuit, number
Electrically connected according to drive circuit, power voltage terminal etc..In the present embodiment, power line can for example include source and drain Conductive layer portions (slightly
It is described in detail afterwards)；Such as power line can include on different layers and the grid conductive layer part being electrically connected to each other and source and drain are conductive
Layer segment, the power line can be directly or indirectly connected to power voltage terminal.
For example, as shown in figs. 3 a-3 c, in the present embodiment, drive circuit layer 102 can include active layer 1022, the first grid
Insulating barrier 1023, the first grid conductive layer 1024, the second gate insulation layer 1025, the second grid conductive layer 1026, insulating barrier 1027 and source
Leak the functional layer such as conductive layer 1028, these structure sheafs or functional layer collectively form electric capacity in first area 10, positioned at the
The structure such as the thin film transistor (TFT) in two regions 20 and the ambient signal line in the 3rd region 30.The thin film transistor (TFT) is, for example,
Driving transistor.
In an example of the present embodiment, display panel is for example additionally may included on underlay substrate 10 and drive circuit
Layer 102 under barrier layer 1011 and cushion 1021, and pattern metal level for example can be located at barrier layer 1011 and
Between cushion 1021.The underlay substrate 10 is, for example, glass substrate, plastic base etc., and barrier layer 1011 is formed to prevent substrate
Impurity or harmful ion in substrate are diffused into drive circuit layer and cause the deterioration in characteristics of such as thin film transistor (TFT).Cushion
1021 coverings are on the metal layer.
For example, in the present embodiment, the first grid conductive layer 1024, the and of the second gate insulation layer 1025 in first area 10
Second grid conductive layer 1026 is stacked on one another, it is possible thereby to form the first electric capacity；Now, the first grid conductive layer 1024 is as the first electricity
The first pole held, medium of second gate insulation layer 1025 as the first electric capacity, the second grid conductive layer 1026 is as the first electric capacity
Second pole.In addition, the metal level can also be included with the first pole (i.e. the first grid conductive layer 1024) of the first electric capacity at least partly
The Part II 103B of face.
As shown in Figure 3A, Part II 103B and Part I 103A for example can be two independent parts；Such as Fig. 3 B
Shown, Part II 103B can for example electrically connect with Part I 103A；As shown in Figure 3 C, Part II 103B and first
It can also be continuous with a part to divide 103A, i.e. Part II 103B and Part I 103A are same metal-layer structure.
In one example of the present embodiment, Part II 103B, cushion 1021, the first gate insulation included by metal level
The grid conductive layer 1024 of layer 1023 and first may be constructed the second electric capacity；The gate insulation layer 1023 of cushion 1021 and first is used as second
The first pole and the second pole of the medium of electric capacity, Part II 103B and the first grid conductive layer 1024 respectively as the second electric capacity.This
When, the second pole of the first electric capacity can for example electrically connect with Part II 103B, and thus the first electric capacity and the second electric capacity is each other simultaneously
Connection.Therefore, the Part II 103B included by metal level can also increase the total capacitance of the electric capacity of the pixel cell.Capacitance
Increase the delivery of each pixel cell of display panel can be made more sufficient, so as to avoid pixel cell display when dodge
The bad phenomenon such as bright, therefore the display quality of display panel can be improved；In addition, the first electric capacity and the structure of the second electric capacity parallel connection
The unit-area capacitance amount of electric capacity can be improved, is taken up space so as to which electric capacity can be reduced in the required timing of electric capacity one, Jin Eryou
Designed beneficial to the high-resolution of display panel.
In the present embodiment, Part I 103A and Part II 103B positioned at the metal level of first area 10 can be only
Vertical two parts, or integrally formed same metal-layer structure；When Part I 103A and Part II 103B are same
During one metal-layer structure, the structure can connect power supply voltage signal or form electric capacity together with other functional layers.
In the present embodiment, the source and drain conductive layer 1028 positioned at first area 10 can for example connect power supply voltage signal, i.e.,
As the power line that power supply voltage signal is provided for pixel cell, and the Part I 103A included by metal level for example can be with
The power line is electrically connected to each other, such as can pass through at least one first via 1031 and the power line, i.e. source and drain conductive layer
1028 are electrically connected, thus that Part I 103A and source and drain conductive layer 1028 is for example in parallel to be provided jointly for pixel cell
Power supply voltage signal.Therefore, in the present embodiment, Part I 103A addition can reduce the transmission electricity of power supply voltage signal
Resistance, so as to reduce power supply voltage signal in pressure drop caused by transmission, and then reduce display panel power supply voltage signal everywhere
Difference, it is finally reached the technique effect for improving display panel show uniformity.
In the present embodiment, active layer 1022, the first gate insulation layer 1023, the first grid conductive layer in second area 20
1024 (grids as thin film transistor (TFT)), the second gate insulation layer 1025, insulating barrier 1027, source and drain conductive layer 1028 are (including thin
The source electrode of film transistor and drain electrode) thin film transistor (TFT) is formed, the source electrode of the thin film transistor (TFT) and drain electrode can for example connect respectively
Power line and pixel electrode, for driving organic light-emitting diode.In the present embodiment, metal level can also for example include
Channel region (part that grid is corresponded in active layer is channel region) at least with thin film transistor (TFT) in second area 20 is serving as a contrast
The Part III 203 of orthographic projection face on substrate 101, such as Part III 203 can be right against active layer 1022 and serve as a contrast
Orthographic projection on substrate 101 and set.The Part III 203 of metal level can block ambient, to avoid ambient
Harmful effect is produced to the channel region of the thin film transistor (TFT), such as avoids the injection of light and increases the leakage current of thin film transistor (TFT)
Deng.
In the present embodiment, the first grid conductive layer 1024, the second grid conductive layer 1026 and source and drain in the 3rd region 30
Conductive layer 1028 for example can be used for forming ambient signal line, such as grid line, data wire and power line etc..Metal level is for example also
The Part IV being located in neighboring area can be included, such as including the Part IV 303 in the 3rd region 30.4th
303 are divided can for example to pass through at least one second via 3031 and the source and drain conductive layer 1028, first in the 3rd region 30
Grid conductive layer 1024 divides to be electrically connected with the second grid conductive layer 1026, and so resulting structure can be used for forming power line, due to
Resulting power line is made up of the part being distributed on three different layers, and can be electrically connected each other with least one via
(such as in parallel), it is possible thereby to reduce the resistance of power line.Therefore when the source and drain conductive layer 1028 being located in the 3rd region 30 connects
When connecing power supply voltage signal, the addition of Part IV can also reduce the transmission resistance of power supply voltage signal, and then reduce display
The difference of panel power supply voltage signal everywhere, it is finally reached the technique effect for improving display panel show uniformity.The present embodiment
Other examples in, the Part IV 303 included by metal level can also for example connect other signals, for example, Part IV 303
Clock signal (CLK), reset signal (INI), gate high-voltage (VGH), grid low-voltage (VGL) etc. can also be connected.Therefore,
The Part IV 303 of metal level can make full use of the space of neighboring area, and then be advantageous to the narrow frame design of display panel.
In the present embodiment, the material of metal level for example can be titanium, titanium alloy, aluminium, aluminium alloy, molybdenum, molybdenum alloy, copper and copper
The suitable materials such as alloy, or the combination of these materials.Such as the material of metal level can be titanium/aluminium/titanium three-layered node
Structure, titanium/aluminium double-decker etc., the present embodiment is not limited this.
In the present embodiment, display panel can also for example include planarization layer 104, pixel electrode layer 105, pixel defining layer
106th, other functional structures, the present embodiment such as luminescent layer 107, public electrode 109, spacer material 108 repeat no more.Luminescent layer 107
It is interposed between pixel electrode layer 105 and public electrode 109, thus forms Organic Light Emitting Diode.
The patterning between drive circuit layer and underlay substrate included by display panel that the present embodiment provides
Metal level can include some, and wherein at least Part I can be used for connecting display panel voltage source voltage signal, therefore
The part can reduce the transmission resistance of power supply voltage signal, so as to reduce power supply voltage signal in pressure drop caused by transmission,
So as to which the metal level can reduce the difference of display panel power supply voltage signal everywhere so that the display of each position of display panel
Brightness is more accurate, is finally reached the technique effect for improving display panel show uniformity.For example, display panel with compared with
In the case of large-sized, the metal level can effectively improve the show uniformity of display panel.In the present embodiment, the of metal level
Two parts can be combined with the first electric capacity of display panel and form the second electric capacity to improve total electricity of the electric capacity of pixel cell
Capacity.The increase of capacitance can make the delivery of each pixel cell of display panel more sufficient, so as to avoid pixel cell from existing
The bad phenomenon such as occur flashing during display, therefore the display quality of display panel can be improved；In addition, the first electric capacity and the second electricity
Appearance can form parallel-connection structure, and the parallel-connection structure can improve the unit-area capacitance amount of electric capacity, so as to certain in required electric capacity
When can reduce electric capacity and taken up space, and then be advantageous to the high-resolution design of display panel.The Part III of metal level is corresponding
Set in thin film transistor (TFT), the part can effectively be protected to the channel region of thin film transistor (TFT), avoid ambient from injecting
Channel region and have a negative impact.The Part IV of metal level is located at neighboring area, and the part can be used for connecting display panel
Power supply voltage signal can also connect other signals to improve display panel show uniformity, so as to make full use of neighboring area
Space, and then be advantageous to the narrow frame design of display panel.In addition, in the present embodiment, the various pieces included by metal level
In same layer, therefore these parts can be formed in same processing step, so as to simplify the manufacture of display panel
Technique, reduce cost.
Embodiment two
The present embodiment provides a kind of manufacture method of display panel, and the display panel is, for example, display surface as described above
Plate, as shown in figure 4, the method comprising the steps of S101- steps S102.
Step S101：The metal level of patterning is formed on underlay substrate.
In the present embodiment, display panel can for example be divided into viewing area and neighboring area, wherein, viewing area can for example wrap
First area 10 and second area 20 are included, neighboring area can for example include the 3rd region 30.
In the present embodiment, as shown in Figure 5A, the metal level of patterning is formed on underlay substrate 101 first.Metal level example
It can such as include at least being used for connecting the Part I 103A of display panel voltage source voltage signal, Part I 103A for example can be with
Formed in first area 10, and Part I 103A can for example be connected with the power line of the display panel formed afterwards,
For reducing the transmission resistance of power supply voltage signal, reduce power supply voltage signal in pressure drop caused by transmission, and then reduce aobvious
Show the difference of panel power supply voltage signal everywhere, be finally reached the technique effect for improving display panel show uniformity.It is for example, golden
Belonging to layer can also include forming the Part II 103B in first area 10, and Part II 103B can be for example formed corresponding
In the position that will form electric capacity afterwards, so as to be combined with the electric capacity formed afterwards, its capacitance is improved.
In the present embodiment, as shown in Figure 5A, Part I 103A and Part II 103B for example can be mutually disjunct
Two independent parts；Or as shown in Figure 5 B, Part I 103A and Part II 103B can for example be electrically connected；And or
Person, as shown in Figure 5 C, Part I 103A and Part II 103B for example can also be same metal-layer structure；Work as Part I
When 103A and Part II 103B is same metal-layer structure, the structure can connect power supply voltage signal can also be with other
Functional layer forms electric capacity together.
In the present embodiment, metal level can also for example include being formed Part III 203 in second area 20, the 3rd
203 are divided can be for example correspondingly formed in the position for the thin film transistor (TFT) for being used to drive display panel luminous that will be formed afterwards,
Such as the position of orthographic projection face of the channel region of thin film transistor (TFT) on underlay substrate 101 is formed at, so as to Part III 203
Ambient can be blocked, to avoid ambient from producing harmful effect to the channel region of thin film transistor (TFT), such as avoids light
Injection and increase leakage current of thin film transistor (TFT) etc..
In the present embodiment, metal level can also for example include the Part IV 303 being formed in the 3rd region 30.4th
Divide 303 can also for example connect power supply voltage signal, so as to reduce the transmission resistance of power supply voltage signal, it is each to reduce display panel
Locate the difference of power supply voltage signal, improve display panel show uniformity.In other examples of the present embodiment, included by metal level
Part IV 303 can also for example connect other signals, for example, Part IV 303 can also connect clock signal (CLK),
Reset signal (INI), gate high-voltage (VGH), grid low-voltage (VGL) etc., so as to which Part IV 303 can make full use of week
The space in border area domain, and then be advantageous to the narrow frame design of display panel.
In the present embodiment, Part I 103A, Part II 103B, Part III 203 and the Part IV 303 of metal level
Such as can be formed by carrying out a patterning processes to same metal film layer, so as to simplify the manufacture work of display panel
Skill.
In the present embodiment, the material of metal level for example can be titanium, titanium alloy, aluminium, aluminium alloy, molybdenum, molybdenum alloy, copper and copper
The suitable materials such as alloy, or the combination of these materials.Such as the material of metal level can be titanium/aluminium/titanium three-layered node
Structure, titanium/aluminium double-decker etc., the present embodiment is not limited this.
In the present embodiment, before forming the metal level of patterning on underlay substrate 101, such as one layer of resistance can be initially formed
Barrier 1011, forms metal level on layer barrier layer 1011 afterwards, and barrier layer 1011 can form to structures such as metal levels and protect.
The material on barrier layer 1011 suitable material, the present embodiment such as can be silicon nitride, silica, silicon oxynitride not be done to this
Limit.
Step S102：Pixel cell is formed on the metal layer.
In the present embodiment, after metal level formation, pixel cell can be formed on the metal layer, the pixel cell is for example
Drive circuit layer and Organic Light Emitting Diode etc. can be included.
In the present embodiment, forming drive circuit layer can for example include forming the multiple films crystalline substance for being used to drive display panel
The structures such as body pipe, electric capacity, grid line, data wire, power line；It is brilliant that the plurality of thin film transistor (TFT) can include driving transistor, switch
Among body pipe etc., grid line, data wire, power line etc. for example can extend to neighboring area from viewing area, and thus driven with grid
The electrical connections such as dynamic circuit, data drive circuit, power voltage terminal.In the present embodiment, such as electric capacity can be formed in the firstth area
In domain 10, thin film transistor (TFT) is formed in second area 20, the portion using grid line, data wire, power line etc. as peripheral circuit
Divide and formed in the 3rd region 30.In the present embodiment, power line can for example include source and drain conductive layer (being described in detail later), such as electricity
Source line includes the grid conductive layer part for being formed on different layers and being electrically connected to each other and source and drain conductive layer, the power line can be straight
Connect or be connected indirectly to power voltage terminal.
As shown in fig. 6, before drive circuit layer is formed, such as one layer of cushion 1021 can be formed on the metal layer, from
And metal level is between barrier layer 1011 and cushion 1021.
In the present embodiment, such as one layer of active layer material can be formed on cushion 1021, then for example with photoetching
Technique etc. is patterned to active layer material, finally forms the active layer for forming thin film transistor (TFT) in the second area
1022, corresponding conductorization processing then is carried out to the other parts in addition to channel region of active layer 1022.In the present embodiment,
The suitable material such as can use silicon nitride, silica, silicon oxynitride of cushion 1021；Active layer 1022 can for example be adopted
This is not limited with semi-conducting material, the present embodiment such as non-crystalline silicon, polysilicon, oxide semiconductors (such as IGZO).
As shown in fig. 7, after active layer 1022 is formed, the first gate insulation layer 1023, Zhi Hou is formed in whole substrate surface
First grid material layer is formed on first gate insulation layer 1023, then uses to enter first grid material layer such as photoetching process
Row is patterned to form the first grid conductive layer.First grid conductive layer can for example include the part 1024A positioned at first area 10, position
In the part 1024B and the part 1024C positioned at the 3rd region 30 of second area 20.Part 1024A as described below is used to be formed
Electric capacity, part 1024B are used for the grid for forming thin film transistor (TFT), and part 1024C is used to form signal wire etc..In the present embodiment,
First gate insulation layer 1023 suitable material such as can use silicon nitride, silica, silicon oxynitride；First grid conductive layer example
Metal conductive material can be such as used, for example with suitable materials such as molybdenum, aluminium, titaniums, the present embodiment is not limited this.
In some examples of the present embodiment, such as when active layer is polysilicon, grid conductive layer 1024B can also be used as mask, it is right
It is doped in active layer 1022.
As shown in figure 8, after the first grid conductive layer is formed, such as the second gate insulation layer can be formed on whole substrate
1025, second grid material layer is formed on the second gate insulation layer 1025 afterwards, is then used such as photoetching process to second
Gate material layers are patterned to form the second grid conductive layer.Second grid conductive layer can for example include positioned at first area 10
The part 1026A and part 1026B positioned at the 3rd region 30.Second grid conductive layer is located at the part 1026A of first area 10,
The part 1024A of two gate insulation layers 1025 and the first grid conductive layer may be constructed the first electric capacity, the part of the first grid conductive layer
First poles of the 1024A as the first electric capacity, medium of second gate insulation layer 1025 as the first electric capacity, the portion of the second grid conductive layer
Divide second poles of the 1026A as the first electric capacity.In the present embodiment, the part 1024A of the first grid conductive layer, cushion 1021,
One gate insulation layer 1023, the Part II 103B of metal level can also form the second electric capacity, and the diarcs of the first electric capacity
Electrically connected as the Part II 103B with metal level, thus the first electric capacity and the second electric capacity are connected in parallel to each other.Therefore metal level
Part II 103B can increase the total capacitance of the electric capacity of pixel cell.In the present embodiment, the second gate insulation layer 1025 is for example
The suitable materials such as silicon nitride, silica, silicon oxynitride can be used；Second grid conductive layer conduction such as can use metal
Material, such as suitable material, the present embodiment such as molybdenum, aluminium, titanium can be used not to limit this.
As shown in figure 9, after the second grid conductive layer is formed, a layer insulating 1027, Zhi Houke is formed in whole substrate surface
With using patterning processes, for example, photoetching process formed respectively in multiple functional layers expose metal level, the first grid conductive layer and
Multiple vias of second grid conductive layer.These vias can for example include expose metal level first positioned at first area 10
Part 103A the first via 1031, positioned at the second via of the Part IV 303 for exposing metal level in the 3rd region 30
3031, positioned at the part 1026A for exposing second grid of first area 10 the 3rd via 1032, positioned at second area 20
Expose the 4th via 2031 and the 5th via 2032 of active layer 1022, the first grid that exposes positioned at the 3rd region 30
7th mistake of part 1024C the 6th via 3032 and the part 1024B for exposing second grid positioned at the 3rd region 30
Hole 3033；Also, in order that the current-carrying part that must be located on different layers is preferably in parallel, it can also be formed more in diverse location
Via.In the present embodiment, these vias can for example be formed by a patterning processes.In the present embodiment, insulating barrier 207
Silicon nitride, silica suitable material can be such as used, the present embodiment is not limited this.
As shown in Figure 10, after multiple vias are formed, one layer of source-drain electrode metal level is formed in substrate surface, is then for example adopted
It is patterned with photoetching process etc. to form the source and drain conductive layer 1028 of patterning, the source and drain conductive layer 1028 of patterning leads to
Above-mentioned via is crossed to electrically connect with the metal level, the first grid conductive layer or the second grid conductive layer being exposed.In the present embodiment, pattern
The source and drain conductive layer 1028 of change includes the part 1028A for being formed at first area 10, is formed at the part 1028B of second area 20
With the part 1028C for being formed at the 3rd region 30.In the present embodiment, source and drain conductive layer 1028 is in the part of first area 10
1028A can for example electrically connect with the part 1026A of the grid conductive layer of Part I 103 and second of metal level, and be picture
Plain unit provides a part for the power line of power supply voltage signal.Therefore, the Part I 103 of metal level can with power line that
So as to formed parallel connection, the parallel-connection structure can reduce the transmission resistance of power supply voltage signal for this electrical connection, reduce power supply electricity
Signal is pressed in pressure drop caused by transmission, and then reduces the difference of display panel power supply voltage signal everywhere, is finally reached raising
The technique effect of display panel show uniformity.It is two parts that source and drain conductive layer 1028 divides in the part 1028B of second area 20
And electrically connected respectively with active layer 1022, source electrode and the drain electrode of thin film transistor (TFT) are formed, the thin film transistor (TFT) can be used for driving
The light-emitting component (Organic Light Emitting Diode) formed afterwards.Part 1028C and gold of the source and drain conductive layer 1028 in the 3rd region 30
Belong to the part 1026B electrical connections of the Part IV 303 of layer, the part 1024C of the first grid conductive layer and the second grid conductive layer, so
Resulting structure can be used for forming power line, because resulting power line is by the part structure that is distributed on three different layers
Into, and each other an at least one via can be used to electrically connect (such as in parallel), it is possible thereby to reduce the resistance of power line.Source and drain
The part 1028C that conductive layer 1028 is located at the 3rd region 30 for example can be as the electricity that power supply voltage signal is provided for pixel cell
A part for source line, parallel-connection structure in parallel so as to the be formed so that Part IV 303 of metal level is electrically connected to each other with power line
The transmission resistance of power supply voltage signal can be reduced, reduces power supply voltage signal in pressure drop caused by transmission, and then is reduced aobvious
Show the difference of panel power supply voltage signal everywhere, be finally reached the technique effect for improving display panel show uniformity.This implementation
Example in, source and drain conductive layer 1028 such as can with metal conductive material, such as can use titanium, titanium alloy, aluminium, aluminium alloy, molybdenum,
The suitable materials such as molybdenum alloy, copper and copper alloy, the present embodiment are not limited this.
As shown in figure 11, in the present embodiment, the manufacture method of display panel is for example additionally may included in source and drain conductive layer
The function knots such as planarization layer 104, pixel electrode layer 105, pixel defining layer 106, luminescent layer 107, spacer material 108 are formed on 1028
The step of structure, it can also further form the public electrode 109 for forming light-emitting component and encapsulating structure (does not show in figure
Go out) etc., public electrode 109 and pixel electrode layer 105 are sandwiched in-between so as to forming organic light-emitting diodes by luminescent layer 107
Pipe, the present embodiment repeat no more.Public electrode 109 is for example electrically connected to another power voltage terminal.
The display panel that the method provided using the present embodiment is manufactured is included between drive circuit layer and underlay substrate
Patterning metal level, the metal level can include some, and wherein at least Part I can be used for connecting display surface
Plate power supply voltage signal, therefore the part can reduce the transmission resistance of power supply voltage signal, so as to reduce power supply voltage signal
In pressure drop caused by transmission, and then reduce the difference of display panel power supply voltage signal everywhere so that each position of display panel
The display brightness put is more accurate, is finally reached the technique effect for improving display panel show uniformity.For example, in display panel
In the case of with large-size, the metal level can effectively improve the show uniformity of display panel.The second of metal level
Part can be combined with the first electric capacity of display panel and form the second electric capacity to improve the total capacitance of the electric capacity of pixel cell
Amount.The increase of capacitance can make the delivery of each pixel cell of display panel more sufficient, so as to avoid pixel cell aobvious
The bad phenomenon such as occur flashing when showing, therefore the display quality of display panel can be improved；In addition, the first electric capacity and the second electric capacity
Parallel-connection structure can be formed, the parallel-connection structure can improve the unit-area capacitance amount of electric capacity, so as in the required timing of electric capacity one
Electric capacity can be reduced to be taken up space, and then be advantageous to the high-resolution design of display panel.The Part III of metal level corresponds to
Thin film transistor (TFT) set, the channel region of thin film transistor (TFT) can effectively be protected, avoid ambient injection channel region and
Have a negative impact.The Part IV of metal level is located at neighboring area, can be used for connect display panel voltage source voltage signal with
Display panel show uniformity is improved, other signals can also be connected, so as to make full use of the space of neighboring area, and then favorably
In the narrow frame design of display panel.In addition, in the present embodiment, the various pieces included by metal level are formed in display panel
In same layer, therefore these parts can be formed in same processing step；Meanwhile the metal level of the present embodiment formed when without
Other insulating barriers need to be re-introduced into, thus only increase by a process steps metal level can be prepared, therefore the present embodiment carries
The method of confession can also simplify the manufacturing process of display panel, and then cost-effective.
It is also following what time to need to illustrate：
(1) embodiment of the present disclosure accompanying drawing relates only to the structure being related to the embodiment of the present disclosure, and other structures refer to
It is commonly designed.
(2) for clarity, in the accompanying drawing for describing embodiment of the disclosure, the thickness in layer or region is exaggerated
Or reduce, i.e., these accompanying drawings are not to be drawn according to the ratio of reality.It is appreciated that ought such as layer, film, region or substrate etc
When element is referred to as "above" or "below" another element, the element can it is " direct " positioned at another element "up" or "down" or
There may be intermediary element.
(3) in the case where not conflicting, the feature in embodiment of the disclosure and embodiment can be mutually combined to obtain
New embodiment.
Described above, the only embodiment of the disclosure, but the protection domain of the disclosure is not limited thereto is any
Those familiar with the art can readily occur in change or replacement in the technical scope that the disclosure discloses, and should all contain
Cover within the protection domain of the disclosure.Therefore, the protection domain of the disclosure should be defined by scope of the claims.
Claims (9)
1. a kind of display panel, it is characterised in that the display panel includes：
Underlay substrate；
The pixel cell being arranged on the underlay substrate, the pixel cell include drive circuit layer；
The metal level of patterning between the drive circuit layer and the underlay substrate, the metal level include at least using
In the Part I for connecting the display panel voltage source voltage signal.
2. display panel according to claim 1, it is characterised in that it is the pixel cell that the drive circuit layer, which includes,
The power line of power supply voltage signal is provided, the Part I is electrically connected to each other with the power line.
3. display panel according to claim 2, it is characterised in that the power line includes source and drain Conductive layer portions.
4. display panel according to claim 1, it is characterised in that the drive circuit layer includes electric capacity and film crystal
Pipe；Wherein, the electric capacity includes the first pole and the second pole, and it is few that the metal level also includes first best adjacent with the electric capacity
The Part II of part face.
5. display panel according to claim 4, it is characterised in that second pole and the Part II of the metal level
Electrical connection.
6. display panel according to claim 4, it is characterised in that the metal level also includes at least brilliant with the film
The Part III of orthographic projection face of the channel region of body pipe on the underlay substrate.
7. according to any described display panels of claim 1-6, it is characterised in that the display panel includes viewing area and week
Border area domain, the Part I of the metal level are located in the viewing area, and the metal level also includes being located at the peripheral region
Part IV in domain.
8. according to any described display panels of claim 1-6, it is characterised in that the display panel is also included positioned at described
Barrier layer and cushion on underlay substrate and under the drive circuit layer；The metal level is arranged at the barrier layer and institute
State between cushion.
9. a kind of display device, it is characterised in that the display device includes any described display panels of claim 1-8.
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| CN201721184968.XU CN207134358U (en) | 2017-09-15 | 2017-09-15 | Display panel and display device |
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| CN201721184968.XU CN207134358U (en) | 2017-09-15 | 2017-09-15 | Display panel and display device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109147654A (en) * | 2018-10-30 | 2019-01-04 | 京东方科技集团股份有限公司 | Display base plate and display device |
| WO2019052502A1 (en) * | 2017-09-15 | 2019-03-21 | 京东方科技集团股份有限公司 | Display panel and manufacturing method therefor, and display apparatus |
| CN109904201A (en) * | 2019-02-28 | 2019-06-18 | 昆山国显光电有限公司 | Array substrate and preparation method thereof and display device |
| WO2020133446A1 (en) * | 2018-12-29 | 2020-07-02 | 深圳市柔宇科技有限公司 | Array substrate, display panel, and display device |
-
2017
- 2017-09-15 CN CN201721184968.XU patent/CN207134358U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019052502A1 (en) * | 2017-09-15 | 2019-03-21 | 京东方科技集团股份有限公司 | Display panel and manufacturing method therefor, and display apparatus |
| CN109509768A (en) * | 2017-09-15 | 2019-03-22 | 京东方科技集团股份有限公司 | Display panel and its manufacturing method, display device |
| CN109147654A (en) * | 2018-10-30 | 2019-01-04 | 京东方科技集团股份有限公司 | Display base plate and display device |
| US11335242B2 (en) | 2018-10-30 | 2022-05-17 | Boe Technology Group Co., Ltd. | Display substrate and display device |
| WO2020133446A1 (en) * | 2018-12-29 | 2020-07-02 | 深圳市柔宇科技有限公司 | Array substrate, display panel, and display device |
| CN112703600A (en) * | 2018-12-29 | 2021-04-23 | 深圳市柔宇科技股份有限公司 | Array substrate, display panel and display device |
| CN109904201A (en) * | 2019-02-28 | 2019-06-18 | 昆山国显光电有限公司 | Array substrate and preparation method thereof and display device |
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