WO2020127442A3 - Module semiconducteur comportant un semiconducteur et un boîtier renfermant partiellement le semiconducteur - Google Patents

Module semiconducteur comportant un semiconducteur et un boîtier renfermant partiellement le semiconducteur Download PDF

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Publication number
WO2020127442A3
WO2020127442A3 PCT/EP2019/085883 EP2019085883W WO2020127442A3 WO 2020127442 A3 WO2020127442 A3 WO 2020127442A3 EP 2019085883 W EP2019085883 W EP 2019085883W WO 2020127442 A3 WO2020127442 A3 WO 2020127442A3
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WO
WIPO (PCT)
Prior art keywords
semiconductor
housing
manufacturing
same
intermediate product
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Application number
PCT/EP2019/085883
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English (en)
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WO2020127442A2 (fr
Inventor
Martin Becker
Jacek Rudzki
Ronald Eisele
Frank Osterwald
André Bastos Abibe
Original Assignee
Danfoss Silicon Power Gmbh
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Publication date
Application filed by Danfoss Silicon Power Gmbh filed Critical Danfoss Silicon Power Gmbh
Publication of WO2020127442A2 publication Critical patent/WO2020127442A2/fr
Publication of WO2020127442A3 publication Critical patent/WO2020127442A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
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    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H01L24/92—Specific sequence of method steps
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    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
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    • H01L2224/06181—On opposite sides of the body
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    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
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    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37147—Copper [Cu] as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/4805—Shape
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    • H01L2224/484—Connecting portions
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    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/1033—Gallium nitride [GaN]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)

Abstract

Un module semiconducteur comportant un semiconducteur et un boîtier renfermant le semiconducteur est caractérisé en ce que le boîtier est constitué d'un matériau électroconducteur et présente un évidement occupé par le semiconducteur, le côté du semiconducteur opposé à l'évidement étant coplanaire avec la surface du boîtier ayant l'évidement.
PCT/EP2019/085883 2018-12-20 2019-12-18 Module semiconducteur comportant un semiconducteur et un boîtier renfermant partiellement le semiconducteur WO2020127442A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018133089.8A DE102018133089A1 (de) 2018-12-20 2018-12-20 Halbleitermodul mit einem Halbleiter und einem den Halbleiter teilweise einhausenden Gehäuse
DE102018133089.8 2018-12-20

Publications (2)

Publication Number Publication Date
WO2020127442A2 WO2020127442A2 (fr) 2020-06-25
WO2020127442A3 true WO2020127442A3 (fr) 2020-07-30

Family

ID=69143534

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Application Number Title Priority Date Filing Date
PCT/EP2019/085883 WO2020127442A2 (fr) 2018-12-20 2019-12-18 Module semiconducteur comportant un semiconducteur et un boîtier renfermant partiellement le semiconducteur

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DE (1) DE102018133089A1 (fr)
WO (1) WO2020127442A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11842953B2 (en) 2021-04-28 2023-12-12 Infineon Technologies Ag Semiconductor package with wire bond joints and related methods of manufacturing

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0513410A1 (fr) * 1991-05-15 1992-11-19 IXYS Semiconductor GmbH Module semi-conducteur de puissance et procédé de fabrication d'un tel module
US20070012947A1 (en) * 2002-07-15 2007-01-18 International Rectifier Corporation Direct FET device for high frequency application
US20170338190A1 (en) * 2015-02-25 2017-11-23 Mitsubishi Electric Corporation Power module

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7235877B2 (en) * 2004-09-23 2007-06-26 International Rectifier Corporation Redistributed solder pads using etched lead frame
JP6248803B2 (ja) * 2014-05-20 2017-12-20 富士電機株式会社 パワー半導体モジュール

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0513410A1 (fr) * 1991-05-15 1992-11-19 IXYS Semiconductor GmbH Module semi-conducteur de puissance et procédé de fabrication d'un tel module
US20070012947A1 (en) * 2002-07-15 2007-01-18 International Rectifier Corporation Direct FET device for high frequency application
US20170338190A1 (en) * 2015-02-25 2017-11-23 Mitsubishi Electric Corporation Power module

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Publication number Publication date
DE102018133089A1 (de) 2020-06-25
WO2020127442A2 (fr) 2020-06-25

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