WO2020124760A1 - 显示面板及其显示屏 - Google Patents

显示面板及其显示屏 Download PDF

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Publication number
WO2020124760A1
WO2020124760A1 PCT/CN2019/074899 CN2019074899W WO2020124760A1 WO 2020124760 A1 WO2020124760 A1 WO 2020124760A1 CN 2019074899 W CN2019074899 W CN 2019074899W WO 2020124760 A1 WO2020124760 A1 WO 2020124760A1
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Prior art keywords
layer
display panel
hole
block
encapsulation
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English (en)
French (fr)
Inventor
冯校亮
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/472,072 priority Critical patent/US20210367202A1/en
Publication of WO2020124760A1 publication Critical patent/WO2020124760A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED

Definitions

  • the invention relates to a display panel, in particular to a display panel with a double-sided encapsulation layer and its display screen.
  • the packaging method of flexible OLED display is a major factor restricting the life of OLED devices.
  • an encapsulation layer composed of SiNx and TFE (Thin Film Encapsulation) is formed above the cathode to ensure the isolation of water and oxygen, and can play a flexible role, such as the OLED packaging technology described in US Patent Nos. US9692010 and US9419247.
  • the yield of the above packaging technology is relatively low, and the reliability of the product will have certain risks.
  • the packaging method of flexible OLED display is a major factor restricting the life of OLED devices.
  • an encapsulation layer composed of SiNx and TFE (Thin Film Encapsulation) is formed above the cathode to ensure the isolation of water and oxygen, and can play a flexible role.
  • TFE Thin Film Encapsulation
  • the main object of the present invention is to provide a display panel and a display screen thereof, which can effectively protect an organic light emitting diode inside the structure.
  • the display panel has two encapsulation layers, which can effectively prevent the invasion of water and/or oxygen.
  • the direction of the main light emitting surface of the organic light emitting diode is free of opaque metal lines, such as a cathode. Therefore, the penetration rate of the overall structure can be improved and the brightness can also be improved.
  • an embodiment of the present invention provides a display panel including: a first encapsulation layer; a first buffer layer formed on the first encapsulation layer; and an active layer formed on the A first insulating layer covering the active layer and the first buffer layer; a transparent electrode layer formed on the first insulating layer as an anode; a first metal Layer, including a first block and a second block, wherein the first block is formed on the transparent electrode layer and has an opening, and the second block is formed on the first insulating layer At the position corresponding to the active layer, as a gate; a second insulating layer covering the first block, the second block and the first insulating layer, wherein the second insulating layer Forming a first through hole and a second through hole together with the first insulating layer on the active layer, and the second insulating layer is on the first block of the first metal layer Forming a third through hole; a second metal layer formed on the second insulating layer, connecting the active layer through the first through hole and the second
  • the active layer includes an n-type polysilicon and a p-type polysilicon, and the n-type polysilicon and the p-type polysilicon correspond to the first via and the second, respectively At the via hole, the n-type polysilicon and the p-type polysilicon form a source and a drain, respectively.
  • the first encapsulation layer and the second encapsulation layer are a thin-film encapsulation layer.
  • the second metal layer includes a data line, a source electrode, and a drain electrode.
  • the materials of the first buffer layer and the second buffer layer are silicon nitride, silicon oxide, or silicon oxynitride.
  • the second encapsulation layer is a multilayer structure, and the multilayer structure is composed of at least one silicon nitride and at least one thin-film encapsulation layer overlapping each other.
  • a display panel including: a first encapsulation layer; a first buffer layer formed on the first encapsulation layer; and an active layer formed on the first buffer On the layer; a first insulating layer covering the active layer and the first buffer layer; a transparent electrode layer formed on the first insulating layer as an anode; a first metal layer, including a A first block and a second block, wherein the first block is formed on the transparent electrode layer and has an opening, and the second block is formed on the first insulating layer corresponding to all
  • the position of the active layer serves as a gate; a light-emitting layer located in the opening; a cathode layer covering the pixel layer and connected to the light-emitting layer through the opening; and a second encapsulation layer , Formed on the cathode layer.
  • the active layer includes an n-type polysilicon and a p-type polysilicon, and the n-type polysilicon and the p-type polysilicon correspond to the first via and the second, respectively Through holes.
  • the n-type polysilicon and the p-type polysilicon form a source and a drain, respectively.
  • the first encapsulation layer and the second encapsulation layer are thin-film encapsulation layers.
  • the display panel further includes: a second insulating layer covering the first block, the second block and the first insulating layer, wherein the second insulating layer and The first insulating layer forms a first through hole and a second through hole together on the active layer, and the second insulating layer is formed on the first block of the first metal layer A third through hole; a second metal layer formed on the second insulating layer, connected to the active layer with the second through hole, and connected to the first metal through the third through hole The first block of the layer; and a pixel layer covering the second insulating layer and the second metal layer, and connected to the anode through the opening.
  • the second metal layer includes a data line, a source electrode, and a drain electrode.
  • a silicon nitride layer is further included between the first buffer layer and the first encapsulation layer.
  • the display panel further includes a second buffer layer formed on the second encapsulation layer, and a flexible transparent layer formed on the second buffer layer.
  • the materials of the first buffer layer and the second buffer layer are silicon nitride (SiN x ), silicon oxide (SiO x ), or silicon oxynitride (SiNO).
  • the light emitting layer includes a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting material layer, a hole blocking layer, an electron transport layer, and an electron injection layer.
  • the material of the flexible transparent layer is polyimide.
  • the second encapsulation layer is a multilayer structure, and the multilayer structure is composed of at least one silicon nitride and at least one thin-film encapsulation layer overlapping each other.
  • Yet another embodiment of the present invention provides a display screen, wherein the display screen includes the above display panel, wherein the light emitting layer emits a light, and the light exits through the transparent electrode layer.
  • a display panel and a display screen thereof can effectively protect an organic light emitting diode inside the structure.
  • the display panel has two encapsulation layers, which can effectively prevent the invasion of water and/or oxygen.
  • the direction of the main light emitting surface of the organic light emitting diode is free of opaque metal lines, such as a cathode. Therefore, the penetration rate of the overall structure can be improved and the brightness can also be improved.
  • 1A to 1F are manufacturing flowcharts of a display panel of the present invention.
  • FIG. 2 is a schematic diagram of the light exit direction when a display panel of the present invention is applied to a display screen.
  • FIGS. 1A to 1F show a brief process of forming a display panel of the present invention.
  • a first encapsulation layer 210, a silicon nitride layer 220 and a first buffer layer 230 are sequentially formed on a substrate 100 in sequence.
  • the material of the first buffer layer 230 may be silicon nitride (SiN x ), silicon oxide (SiO x ), or silicon oxynitride (SiNO), but it is not limited thereto.
  • an active layer 300 is formed on the first buffer layer 230.
  • the active layer may form polycrystalline silicon through a crystallization step, and form an n-type polycrystalline silicon and a p-type polycrystalline silicon through doping.
  • the first encapsulation layer 210 may be a thin film encapsulation layer.
  • the thin-film encapsulation layer is a multilayer structure formed by stacking organic materials and inorganic materials on top of each other.
  • a first insulating layer 310 is formed on the active layer 300 to cover the active layer 300 and the first buffer layer 230.
  • Material of the first insulating layer 310 may be a SiN x, and the position of the n-type polysilicon and p-type polysilicon reserved holes, or may be performed later in the appropriate treatment, such as by etching, to A contact hole conducting with the active layer is formed.
  • a transparent electrode layer 400 is formed on the first insulating layer 310.
  • the transparent electrode layer 400 is located outside the active layer 300, for example, at the left side of FIG. 1B.
  • the transparent electrode layer 400 may be an indium tin oxide (ITO) layer, which is used as an anode.
  • ITO indium tin oxide
  • a first metal layer is subsequently formed, the first metal layer includes a first block 510 and a second block 520.
  • the first block 510 is located on the transparent electrode layer 400 and has an opening 530.
  • the second block 520 is formed at a position corresponding to the active layer 300 above the first insulating layer 310 and serves as a gate.
  • a second insulating layer 550 covers the first block 510, the second block 520, and the first insulating layer 310, wherein the second insulating layer 550 and the first insulating layer 310 are A first through hole 620 and a second through hole 630 are formed together on the active layer 300, and the second insulating layer 550 forms a first on the first block 510 of the first metal layer Three through holes 630.
  • a second metal layer 600 is formed on the second insulating layer 550, and is connected to the n-type polysilicon and the p-type polysilicon of the active layer 300 to form a source electrode, respectively (At the first through hole 610) and a drain electrode (at the second through hole 620) and pass through the first block 510 of the first metal layer on the transparent electrode layer 400
  • the third through holes 630 are connected.
  • the second metal layer 600 also includes several data lines.
  • a pixel layer 700 is formed, covering the second insulating layer 550 and the second metal layer 600, and connected to the transparent electrode layer 400 through the opening 530, that is, to the anode. Meanwhile, the opening 530 above the transparent electrode layer 400 forms a space for accommodating a light-emitting layer.
  • a light-emitting layer 710 is fabricated.
  • the light-emitting layer 710 may be a multi-layer composite structure.
  • a common light-emitting layer structure includes a hole injection layer, a hole transport layer, an electron blocking layer, and a light-emitting material layer , A hole blocking layer, an electron transport layer, and an electron injection layer, but not limited to this.
  • a cathode layer 720 and a second encapsulation layer 730 are formed.
  • the material of the second encapsulation layer 730 may be a thin-film encapsulation layer or a multilayer structure including the thin-film encapsulation layer.
  • the multilayer structure may be composed of at least one silicon nitride (SiN x ) and at least one thin film encapsulation layer overlapping each other, for example.
  • a second buffer layer 800 is formed on the second encapsulation layer 730.
  • the material of the second buffer layer 800 may be a material with the first buffer layer 230 is similar, may be silicon nitride (SiN x), silicon oxide (SiO x) or silicon oxynitride (a SiNO), however not limited thereto
  • the first buffer layer 230 and the second buffer layer 800 may use the same or different materials.
  • a flexible transparent layer 900 is formed on the second buffer layer.
  • the material of the flexible transparent layer 900 may be, for example, polyimide (PI), but it is not limited thereto, and any flexible with high transmittance
  • the material is used as a base layer of a flexible light-emitting diode (OLED).
  • a flexible OLED display as shown in FIG. 2 can be formed.
  • FIG. 2 is a schematic diagram of actual light output of the display panel in the above embodiment of the present invention.
  • the direction of FIG. 2 is opposite to that of FIG. 1F.
  • the upper side is a visible surface.
  • the user can watch the display effect of the display screen, so that the light of the OLED is emitted through the transparent electrode layer 400 It comes out and then enters the eyes of the user, and has a higher transmittance than that through the cathode layer 720, so the brightness of the flexible OLED display will also increase.
  • the display panel of the present invention has two encapsulation layers, which can effectively prevent the invasion of water and/or oxygen.
  • the main light emitting direction of the organic light emitting diode does not have an opaque metal line, such as a cathode, so the transmittance of the overall structure can be improved and the brightness can also be improved.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明公开一种显示面板及其显示屏。所述显示面板包含一第一绝缘层；一透明电极层；一第一金属层，包含一第一区块与一第二区块，其中所述第一区块形成在所述透明电极层上且具有一开口；一第二绝缘层，覆盖所述第一区块、第二区块以及所述第一绝缘层，其中所述第二绝缘层与所述第一绝缘层共同形成一第一通孔及一第二通孔，且所述第二绝缘层于所述第一金属层的所述第一区块上形成一第三通孔；一发光层，位于所述开口内；以及一阴极层，通过所述开口与所述发光层连接；一第二封装层，形成于所述阴极层上。

Description

显示面板及其显示屏 技术领域
本发明是有关于一种显示面板，特别是有关于一种具有双面封装层的显示面板及其显示屏。
 背景技术
目前柔性OLED显示屏的封装方式是制约OLED器件寿命的一大因素。通常，由SiNx和TFE(Thin Film Encapsulation)组成的封装层被形成在阴极上方，以确保隔绝水氧，并且能起到柔性的作用，如美国专利号US9692010及US9419247所述的OLED封装技术。但在现实生产中，采用上述封装技术的良率比较低，产品的信赖性会有一定的风险。
故，有必要提供一种显示面板及其显示屏，以解决现有技术所存在的问题。
 技术问题
目前柔性OLED显示屏的封装方式是制约OLED器件寿命的一大因素。通常，由SiNx和TFE(Thin Film Encapsulation)组成的封装层被形成在阴极上方，以确保隔绝水氧，并且能起到柔性的作用。然而，在现实生产中，采用此封装技术的良率比较低，产品的信赖性会有一定的风险。
 技术解决方案
本发明的主要目的在于提供一种显示面板及其显示屏，可将一有机发光二极管有效保护于所述构造的内部。所述显示面板具有两层封装层，可更有效隔绝水和/或氧气的侵入。此外，将所述显示面板应用在一显示屏中，所述有机发光二极管的主要出光面的方向没有不透明的金属线路存在，如阴极，因此整体结构的穿透率可以提升，亮度也可以提高。
为达上述目的，本发明的一实施例提供一种显示面板，其包含：一第一封装层；一第一缓冲层，形成于所述第一封装层上；一有源层，形成于所述第一缓冲层上；一第一绝缘层，覆盖所述有源层以及所述第一缓冲层；一透明电极层，形成于所述第一绝缘层上，作为一阳极；一第一金属层，包含一第一区块与一第二区块，其中所述第一区块形成在所述透明电极层上且具有一开口，以及所述第二区块形成在所述第一绝缘层上对应于所述有源层的位置处，作为一栅极；一第二绝缘层，覆盖所述第一区块、第二区块以及所述第一绝缘层，其中所述第二绝缘层与所述第一绝缘层于所述有源层上共同形成一第一通孔及一第二通孔，且所述第二绝缘层于所述第一金属层的所述第一区块上形成一第三通孔；一第二金属层，形成在所述第二绝缘层上，通过所述第一通孔与所述第二通孔连接所述有源层，且通过所述第三通孔连接所述第一金属层的所述第一区块；一像素层，覆盖所述第二绝缘层与所述第二金属层，通过所述开口连接所述阳极；一发光层，位于所述开口内；一阴极层，通过所述开口与所述发光层连接；一第二封装层，形成于所述阴极层上；一第二缓冲层，形成于所述第二封装层上；以及一柔性透明层，形成于所述第二缓冲层上。
在本发明的一实施例中，所述有源层包含一n型多晶硅以及一p型多晶硅，所述n型多晶硅及所述p型多晶硅分别对应于所述第一通孔与所述第二通孔处，其中所述n型多晶硅及所述p型多晶硅分别形成一源极及一漏极。
在本发明的一实施例中，所述第一封装层及所述第二封装层是一薄膜封装层。
在本发明的一实施例中，所述第二金属层包含数据线、一源极电极以及一漏极电极。
在本发明的一实施例中，所述第一缓冲层及所述第二缓冲层的材料是氮化硅、氧化硅或氮氧化硅。
在本发明的一实施例中，所述第二封装层是一多层结构，所述多层结构是由至少一氮化硅和至少一薄膜封装层彼此交叠所组成。
本发明的另一实施例提供一种显示面板，其包含：一第一封装层；一第一缓冲层，形成于所述第一封装层上；一有源层，形成于所述第一缓冲层上；一第一绝缘层，覆盖所述有源层以及所述第一缓冲层；一透明电极层，形成于所述第一绝缘层上，作为一阳极；一第一金属层，包含一第一区块与一第二区块，其中所述第一区块形成在所述透明电极层上且具有一开口，以及所述第二区块形成在所述第一绝缘层上对应于所述有源层的位置处，作为一栅极；一发光层，位于所述开口内；一阴极层，覆盖所述像素层并通过所述开口与所述发光层连接；以及一第二封装层，形成于所述阴极层上。
在本发明的一实施例中，所述有源层包含一n型多晶硅以及一p型多晶硅，所述n型多晶硅及所述p型多晶硅分别对应于所述第一通孔与所述第二通孔处。
在本发明的一实施例中，所述n型多晶硅及所述p型多晶硅分别形成一源极及一漏极。
在本发明的一实施例中，所述第一封装层及所述第二封装层是薄膜封装层。
在本发明的一实施例中，所述显示面板还包含：一第二绝缘层，覆盖所述第一区块、第二区块以及所述第一绝缘层，其中所述第二绝缘层与所述第一绝缘层于所述有源层上共同形成一第一通孔及一第二通孔，且所述第二绝缘层于所述第一金属层的所述第一区块上形成一第三通孔；一第二金属层，形成在所述第二绝缘层上，与所述第二通孔连接所述有源层，且通过所述第三通孔连接所述第一金属层的所述第一区块；以及一像素层，覆盖所述第二绝缘层与所述第二金属层，通过所述开口连接所述阳极。
在本发明的一实施例中，所述第二金属层包含数据线、一源极电极以及一漏极电极。
在本发明的一实施例中，所述第一缓冲层与所述第一封装层之间另包含一氮化硅层。
在本发明的一实施例中，所述显示面板另包含一第二缓冲层，形成于所述第二封装层上，以及一柔性透明层，形成于所述第二缓冲层上。
在本发明的一实施例中，所述第一缓冲层及所述第二缓冲层的材料是氮化硅（SiN x）、氧化硅（SiO x）或氮氧化硅（SiNO）。
在本发明的一实施例中，所述发光层包括一空穴注入层、一空穴传输层、一电子阻挡层、一发光材料层、一空穴阻挡层、一电子传输层以及一电子注入层。
在本发明的一实施例中，所述柔性透明层的材料是聚酰亚胺。
在本发明的一实施例中，所述第二封装层是一多层结构，所述多层结构是由至少一氮化硅和至少一薄膜封装层彼此交叠所组成。
本发明的再一实施例提供一种显示屏，其中所述显示屏包含上述显示面板，其中所述发光层发射一光线，所述光线通过所述透明电极层出射。
 有益效果
本发明一实施例所提供的一种显示面板及其显示屏，可将一有机发光二极管有效保护于所述构造的内部。所述显示面板具有两层封装层，可更有效隔绝水和/或氧气的侵入。此外，将所述显示面板应用在一显示屏中，所述有机发光二极管的主要出光面的方向没有不透明的金属线路存在，如阴极，因此整体结构的穿透率可以提升，亮度也可以提高。
 附图说明
图1A至1F是本发明的一显示面板的制造流程图。
图2是本发明的一显示面板应用于一显示屏时的出光方向示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
请参照图1A至1F，其显示了形成本发明的一显示面板的简要流程。如图1A所示，首先在一基板100上依序制作一第一封装层210、一氮化硅层220和一第一缓冲层230。所述第一缓冲层230的材料可以是氮化硅（SiN x）、氧化硅（SiO x）或氮氧化硅（SiNO），然不限于此。随后，在所述第一缓冲层230上制作一有源层300。所述有源层可通过一晶化步骤形成多晶硅，并通过掺杂形成一n型多晶硅和一p型多晶硅。所述第一封装层210可以是一薄膜封装层。所述薄膜封装层是包含有机材料及无机材料彼此堆叠形成的多层结构。
如图1B所示，在所述有源层300上制作一第一绝缘层310，覆盖所述有源层300以及所述第一缓冲层230。所述第一绝缘层310的材料可为SiN x，并在所述n型多晶硅和所述p型多晶硅的位置处预留孔位，或者，也可以在后续进行适当处理，如利用蚀刻，来形成与所述有源层导通的接触孔。接着，在所述第一绝缘层310上制作一透明电极层400，所述透明电极层400位于所述有源层300之外的范围，例如在图1B左侧位置处。所述透明电极层400可以是一氧化铟锡（ITO）层，用作为一阳极。
继续参照图1C，随后制作一第一金属层，所述第一金属层包含一第一区块510与一第二区块520。所述第一区块510位于所述透明电极层400上，并具有一开口530。所述第二区块520形成在所述第一绝缘层310上方对应于所述有源层300的位置处，并作为一栅极。接着，一第二绝缘层550覆盖所述第一区块510、所述第二区块520以及所述第一绝缘层310，其中所述第二绝缘层550与所述第一绝缘层310于所述有源层300上共同形成一第一通孔620及一第二通孔630，且所述第二绝缘层550于所述第一金属层的所述第一区块510上形成一第三通孔630。
参照图1D，在所述第二绝缘层550之上制作一第二金属层600，并与所述有源层300的所述n型多晶硅和所述p型多晶硅相连，分别形成一源极电极（所述第一通孔610处）和一漏极电极（所述第二通孔620处），并与所述透明电极层400上所述第一金属层的所述第一区块510通过所述第三通孔630相连。所述第二金属层600也包含数条数据线。
接着参照图1E，制作一像素层700，覆盖所述第二绝缘层550与所述第二金属层600，并通过所述开口530连接所述透明电极层400，即连接所述阳极。同时，在所述透明电极层400上方的所述开口530形成用来容置一发光层的空间。接着，制作一发光层710，所述发光层710可以是一个多层的复合结构，如一般常见的发光层结构包含有一空穴注入层、一空穴传输层、一电子阻挡层、一发光材料层、一空穴阻挡层、一电子传输层以及一电子注入层，但不限于此。
随后，制作一阴极层720和一第二封装层730。所述第二封装层730的材料可以是一薄膜封装层或一个包含有薄膜封装层的一多层结构。所述多层结构可例如是由至少一氮化硅（SiN x）和至少一薄膜封装层彼此交叠所组成。
接着，如图1F所示，在所述第二封装层730上制作一第二缓冲层800。所述第二缓冲层800的材料可与所述第一缓冲层230的材料类似，可以是氮化硅（SiN x）、氧化硅（SiO x）或氮氧化硅（SiNO），然不限于此，所述第一缓冲层230与所述第二缓冲层800可以采用相同或不同的材料。最后，在所述第二缓冲层上制作一柔性透明层900，所述柔性透明层900的材料可例如是聚酰亚胺（PI），然不限于此，可以使用任何透过率高的柔性材料，以作为一柔性发光二极管（OLED）的一基底层。
最后只要通过激光剥除技术(Laser Lift off)将所述基板100剥离掉，即可形成如图2所示的一柔性OLED显示屏。
图2是本发明上述实施例中，所述显示面板的实际出光示意图。图2的方向与图1F相反，上方为一可视面，在所述可视面的方向上，使用者可观看显示屏的显示效果，这样OLED的光线是透过所述透明电极层400发射出来，然后进入使用者的眼睛，与透过所述阴极层720相比，具有更高的透过率，因此柔性OLED显示屏的亮度也会提升。
相较于现有技术，本发明的所述显示面板具有两层封装层，可更有效隔绝水和/或氧气的侵入。此外，所述显示面板中，所述有机发光二极管的主要出光的方向没有不透明的金属线路存在，如阴极，因此整体结构的穿透率可以提升，亮度也可以提高。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。

Claims (19)

  1. 一种显示面板，其包含：
    一第一封装层；
    一第一缓冲层，形成于所述第一封装层上；
    一有源层，形成于所述第一缓冲层上；
    一第一绝缘层，覆盖所述有源层以及所述第一缓冲层；
    一透明电极层，形成于所述第一绝缘层上，作为一阳极；
    一第一金属层，包含一第一区块与一第二区块，其中所述第一区块形成在所述透明电极层上且具有一开口，以及所述第二区块形成在所述第一绝缘层上对应于所述有源层的位置处，作为一栅极；
    一第二绝缘层，覆盖所述第一区块、第二区块以及所述第一绝缘层，其中所述第二绝缘层与所述第一绝缘层于所述有源层上共同形成一第一通孔及一第二通孔，且所述第二绝缘层于所述第一金属层的所述第一区块上形成一第三通孔；
    一第二金属层，形成在所述第二绝缘层上，通过所述第一通孔与所述第二通孔连接所述有源层，且通过所述第三通孔连接所述第一金属层的所述第一区块；
    一像素层，覆盖所述第二绝缘层与所述第二金属层，通过所述开口连接所述阳极；
    一发光层，位于所述开口内；
    一阴极层，通过所述开口与所述发光层连接；
    一第二封装层，形成于所述阴极层上；
    一第二缓冲层，形成于所述第二封装层上；以及
    一柔性透明层，形成于所述第二缓冲层上。
  2. 如权利要求1所述的显示面板，其中所述有源层包含一n型多晶硅以及一p型多晶硅，所述n型多晶硅及所述p型多晶硅分别对应于所述第一通孔与所述第二通孔处，其中所述n型多晶硅及所述p型多晶硅分别形成一源极及一漏极。
  3. 如权利要求1所述的显示面板，其中所述第一封装层及所述第二封装层是一薄膜封装层。
  4. 如权利要求１所述的显示面板，其中所述第二金属层包含数据线、一源极电极以及一漏极电极。
  5. 如权利要求１所述的显示面板，其中所述第一缓冲层及所述第二缓冲层的材料是氮化硅、氧化硅或氮氧化硅。
  6. 如权利要求1所述的显示面板，其中所述第二封装层是一多层结构，所述多层结构是由至少一氮化硅和至少一薄膜封装层彼此交叠所组成。
  7. 一种显示面板，其包含：
    一第一封装层；
    一第一缓冲层，形成于所述第一封装层上；
    一有源层，形成于所述第一缓冲层上；
    一第一绝缘层，覆盖所述有源层以及所述第一缓冲层；
    一透明电极层，形成于所述第一绝缘层上，作为一阳极；
    一第一金属层，包含一第一区块与一第二区块，其中所述第一区块形成在所述透明电极层上且具有一开口，以及所述第二区块形成在所述第一绝缘层上对应于所述有源层的位置处，作为一栅极；
    一发光层，位于所述开口内；
    一阴极层，通过所述开口与所述发光层连接；以及
    一第二封装层，形成于所述阴极层上。
  8. 如权利要求7所述的显示面板，其中所述有源层包含一n型多晶硅以及一p型多晶硅，所述n型多晶硅及所述p型多晶硅分别对应于所述第一通孔与所述第二通孔处。
  9. 如权利要求8所述的显示面板，其中所述n型多晶硅及所述p型多晶硅分别形成一源极及一漏极。
  10. 如权利要求7所述的显示面板，其中所述第一封装层及所述第二封装层是一薄膜封装层。
  11. 如权利要求7所述的显示面板，其中所述显示面板还包含：一第二绝缘层，覆盖所述第一区块、第二区块以及所述第一绝缘层，其中所述第二绝缘层与所述第一绝缘层于所述有源层上共同形成一第一通孔及一第二通孔，且所述第二绝缘层于所述第一金属层的所述第一区块上形成一第三通孔；
    一第二金属层，形成在所述第二绝缘层上，通过所述第一通孔与所述第二通孔连接所述有源层，且通过所述第三通孔连接所述第一金属层的所述第一区块；以及
    一像素层，覆盖所述第二绝缘层与所述第二金属层，通过所述开口连接所述阳极。
  12. 如权利要求11所述的显示面板，其中所述第二金属层包含数据线、一源极电极以及一漏极电极。
  13. 如权利要求7所述的显示面板，其中所述第一缓冲层与所述第一封装层之间另包含一氮化硅层。
  14. 如权利要求7所述的显示面板，其中所述显示面板另包含一第二缓冲层，形成于所述第二封装层上，以及一柔性透明层，形成于所述第二缓冲层上。
  15. 如权利要求14所述的显示面板，其中所述第一缓冲层及所述第二缓冲层的材料是氮化硅、氧化硅或氮氧化硅。
  16. 如权利要求7所述的显示面板，其中所述发光层包括一空穴注入层、一空穴传输层、一电子阻挡层、一发光材料层、一空穴阻挡层、一电子传输层以及一电子注入层。
  17. 如权利要求7所述的显示面板，其中所述柔性透明层的材料是聚酰亚胺。
  18. 如权利要求7所述的显示面板，其中所述第二封装层是一多层结构，所述多层结构是由至少一氮化硅和至少一薄膜封装层彼此交叠所组成。
  19. 一种显示屏，其中所述显示屏包含如权利要求7所述的显示面板，其中所述发光层发射一光线，所述光线通过所述透明电极层出射。
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