WO2020121379A1 - Adhesive for semiconductor, cured product, and semiconductor component - Google Patents
Adhesive for semiconductor, cured product, and semiconductor component Download PDFInfo
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- WO2020121379A1 WO2020121379A1 PCT/JP2018/045327 JP2018045327W WO2020121379A1 WO 2020121379 A1 WO2020121379 A1 WO 2020121379A1 JP 2018045327 W JP2018045327 W JP 2018045327W WO 2020121379 A1 WO2020121379 A1 WO 2020121379A1
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- adhesive
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- semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 166
- 239000000853 adhesive Substances 0.000 title claims abstract description 123
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 123
- 239000002245 particle Substances 0.000 claims abstract description 62
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052709 silver Inorganic materials 0.000 claims abstract description 39
- 239000004332 silver Substances 0.000 claims abstract description 39
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 claims abstract description 10
- 239000000178 monomer Substances 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims description 46
- 239000012790 adhesive layer Substances 0.000 claims description 21
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 239000007870 radical polymerization initiator Substances 0.000 claims description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 80
- -1 but in recent years Substances 0.000 description 26
- 239000000047 product Substances 0.000 description 24
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 239000005062 Polybutadiene Substances 0.000 description 14
- 229920001971 elastomer Polymers 0.000 description 14
- 229920002857 polybutadiene Polymers 0.000 description 14
- 239000005060 rubber Substances 0.000 description 14
- 239000007788 liquid Substances 0.000 description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 239000007822 coupling agent Substances 0.000 description 10
- 229920005992 thermoplastic resin Polymers 0.000 description 10
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 9
- 238000007789 sealing Methods 0.000 description 9
- 229920000459 Nitrile rubber Polymers 0.000 description 8
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920001223 polyethylene glycol Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 3
- 229930185605 Bisphenol Natural products 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- UMHKOAYRTRADAT-UHFFFAOYSA-N [hydroxy(octoxy)phosphoryl] octyl hydrogen phosphate Chemical compound CCCCCCCCOP(O)(=O)OP(O)(=O)OCCCCCCCC UMHKOAYRTRADAT-UHFFFAOYSA-N 0.000 description 3
- 125000002947 alkylene group Chemical group 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229940059574 pentaerithrityl Drugs 0.000 description 3
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 3
- 229920001451 polypropylene glycol Polymers 0.000 description 3
- 239000011342 resin composition Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- HSLFISVKRDQEBY-UHFFFAOYSA-N 1,1-bis(tert-butylperoxy)cyclohexane Chemical compound CC(C)(C)OOC1(OOC(C)(C)C)CCCCC1 HSLFISVKRDQEBY-UHFFFAOYSA-N 0.000 description 2
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 2
- RZVINYQDSSQUKO-UHFFFAOYSA-N 2-phenoxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC1=CC=CC=C1 RZVINYQDSSQUKO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- 239000004902 Softening Agent Substances 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- GCTPMLUUWLLESL-UHFFFAOYSA-N benzyl prop-2-enoate Chemical compound C=CC(=O)OCC1=CC=CC=C1 GCTPMLUUWLLESL-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000539 dimer Substances 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 150000002009 diols Chemical class 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000007561 laser diffraction method Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- RSVDRWTUCMTKBV-UHFFFAOYSA-N sbb057044 Chemical compound C12CC=CC2C2CC(OCCOC(=O)C=C)C1C2 RSVDRWTUCMTKBV-UHFFFAOYSA-N 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 1
- HGTUJZTUQFXBIH-UHFFFAOYSA-N (2,3-dimethyl-3-phenylbutan-2-yl)benzene Chemical group C=1C=CC=CC=1C(C)(C)C(C)(C)C1=CC=CC=C1 HGTUJZTUQFXBIH-UHFFFAOYSA-N 0.000 description 1
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- YOBOXHGSEJBUPB-MTOQALJVSA-N (z)-4-hydroxypent-3-en-2-one;zirconium Chemical compound [Zr].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O YOBOXHGSEJBUPB-MTOQALJVSA-N 0.000 description 1
- ALVZNPYWJMLXKV-UHFFFAOYSA-N 1,9-Nonanediol Chemical compound OCCCCCCCCCO ALVZNPYWJMLXKV-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- HIQAWCBKWSQMRQ-UHFFFAOYSA-N 16-methylheptadecanoic acid;2-methylprop-2-enoic acid;propan-2-ol;titanium Chemical compound [Ti].CC(C)O.CC(=C)C(O)=O.CC(=C)C(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O HIQAWCBKWSQMRQ-UHFFFAOYSA-N 0.000 description 1
- IEKHISJGRIEHRE-UHFFFAOYSA-N 16-methylheptadecanoic acid;propan-2-ol;titanium Chemical compound [Ti].CC(C)O.CC(C)CCCCCCCCCCCCCCC(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O IEKHISJGRIEHRE-UHFFFAOYSA-N 0.000 description 1
- JMIZWXDKTUGEES-UHFFFAOYSA-N 2,2-di(cyclopenten-1-yloxy)ethyl 2-methylprop-2-enoate Chemical compound C=1CCCC=1OC(COC(=O)C(=C)C)OC1=CCCC1 JMIZWXDKTUGEES-UHFFFAOYSA-N 0.000 description 1
- ODBCKCWTWALFKM-UHFFFAOYSA-N 2,5-bis(tert-butylperoxy)-2,5-dimethylhex-3-yne Chemical compound CC(C)(C)OOC(C)(C)C#CC(C)(C)OOC(C)(C)C ODBCKCWTWALFKM-UHFFFAOYSA-N 0.000 description 1
- YHYCMHWTYHPIQS-UHFFFAOYSA-N 2-(2-hydroxyethoxy)-1-methoxyethanol Chemical compound COC(O)COCCO YHYCMHWTYHPIQS-UHFFFAOYSA-N 0.000 description 1
- HLIQLHSBZXDKLV-UHFFFAOYSA-N 2-(2-hydroxyethoxy)-1-phenoxyethanol Chemical compound OCCOCC(O)OC1=CC=CC=C1 HLIQLHSBZXDKLV-UHFFFAOYSA-N 0.000 description 1
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- OBETXYAYXDNJHR-UHFFFAOYSA-N 2-Ethylhexanoic acid Chemical compound CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 1
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 1
- CLYUOMVYYFJUBR-UHFFFAOYSA-N 2-[methyl-bis[2-(2-methylprop-2-enoyloxy)ethoxy]silyl]oxyethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCO[Si](C)(OCCOC(=O)C(C)=C)OCCOC(=O)C(C)=C CLYUOMVYYFJUBR-UHFFFAOYSA-N 0.000 description 1
- 125000001731 2-cyanoethyl group Chemical group [H]C([H])(*)C([H])([H])C#N 0.000 description 1
- KKOHCQAVIJDYAF-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid;propan-2-ol;titanium Chemical compound [Ti].CC(C)O.CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O.CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O.CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O KKOHCQAVIJDYAF-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- 125000004200 2-methoxyethyl group Chemical group [H]C([H])([H])OC([H])([H])C([H])([H])* 0.000 description 1
- CEXQWAAGPPNOQF-UHFFFAOYSA-N 2-phenoxyethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOC1=CC=CC=C1 CEXQWAAGPPNOQF-UHFFFAOYSA-N 0.000 description 1
- BIISIZOQPWZPPS-UHFFFAOYSA-N 2-tert-butylperoxypropan-2-ylbenzene Chemical compound CC(C)(C)OOC(C)(C)C1=CC=CC=C1 BIISIZOQPWZPPS-UHFFFAOYSA-N 0.000 description 1
- FRIBMENBGGCKPD-UHFFFAOYSA-N 3-(2,3-dimethoxyphenyl)prop-2-enal Chemical compound COC1=CC=CC(C=CC=O)=C1OC FRIBMENBGGCKPD-UHFFFAOYSA-N 0.000 description 1
- KHVIAGJJSLUYIT-UHFFFAOYSA-N 3-(4,5-dihydro-1h-imidazol-2-yl)propyl-triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCC1=NCCN1 KHVIAGJJSLUYIT-UHFFFAOYSA-N 0.000 description 1
- IKYAJDOSWUATPI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propane-1-thiol Chemical compound CO[Si](C)(OC)CCCS IKYAJDOSWUATPI-UHFFFAOYSA-N 0.000 description 1
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 1
- DCQBZYNUSLHVJC-UHFFFAOYSA-N 3-triethoxysilylpropane-1-thiol Chemical compound CCO[Si](OCC)(OCC)CCCS DCQBZYNUSLHVJC-UHFFFAOYSA-N 0.000 description 1
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 1
- LVACOMKKELLCHJ-UHFFFAOYSA-N 3-trimethoxysilylpropylurea Chemical compound CO[Si](OC)(OC)CCCNC(N)=O LVACOMKKELLCHJ-UHFFFAOYSA-N 0.000 description 1
- SRORDPCXIPXEAX-UHFFFAOYSA-N CCCCCCCCCCCCCP(CCCCCCCCCCCCC)(O)(OCCCCCCCC)OCCCCCCCC.CCCCCCCCCCCCCP(CCCCCCCCCCCCC)(O)(OCCCCCCCC)OCCCCCCCC Chemical compound CCCCCCCCCCCCCP(CCCCCCCCCCCCC)(O)(OCCCCCCCC)OCCCCCCCC.CCCCCCCCCCCCCP(CCCCCCCCCCCCC)(O)(OCCCCCCCC)OCCCCCCCC SRORDPCXIPXEAX-UHFFFAOYSA-N 0.000 description 1
- QOZVPNFFOMWHRW-UHFFFAOYSA-N CCO[SiH3].N=C=O.N=C=O.N=C=O Chemical compound CCO[SiH3].N=C=O.N=C=O.N=C=O QOZVPNFFOMWHRW-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- 229920013646 Hycar Polymers 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 229920002319 Poly(methyl acrylate) Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- MZVQCMJNVPIDEA-UHFFFAOYSA-N [CH2]CN(CC)CC Chemical group [CH2]CN(CC)CC MZVQCMJNVPIDEA-UHFFFAOYSA-N 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- NOZAQBYNLKNDRT-UHFFFAOYSA-N [diacetyloxy(ethenyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)C=C NOZAQBYNLKNDRT-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- BSDOQSMQCZQLDV-UHFFFAOYSA-N butan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] BSDOQSMQCZQLDV-UHFFFAOYSA-N 0.000 description 1
- HUIQMPLLYXZKTI-UHFFFAOYSA-J butanoate pentane-2,4-dione zirconium(4+) Chemical compound [Zr+4].CCCC([O-])=O.CCCC([O-])=O.CCCC([O-])=O.CCCC([O-])=O.CC(=O)CC(C)=O HUIQMPLLYXZKTI-UHFFFAOYSA-J 0.000 description 1
- DZBZPOBRWKJBMH-UHFFFAOYSA-L butanoate;octadecanoate;zirconium(2+) Chemical compound [Zr+2].CCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O DZBZPOBRWKJBMH-UHFFFAOYSA-L 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- SHZIWNPUGXLXDT-UHFFFAOYSA-N caproic acid ethyl ester Natural products CCCCCC(=O)OCC SHZIWNPUGXLXDT-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- DDTBPAQBQHZRDW-UHFFFAOYSA-N cyclododecane Chemical compound C1CCCCCCCCCCC1 DDTBPAQBQHZRDW-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 description 1
- HTDKEJXHILZNPP-UHFFFAOYSA-N dioctyl hydrogen phosphate Chemical compound CCCCCCCCOP(O)(=O)OCCCCCCCC HTDKEJXHILZNPP-UHFFFAOYSA-N 0.000 description 1
- XMQYIPNJVLNWOE-UHFFFAOYSA-N dioctyl hydrogen phosphite Chemical compound CCCCCCCCOP(O)OCCCCCCCC XMQYIPNJVLNWOE-UHFFFAOYSA-N 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- NCXTWAVJIHJVRV-UHFFFAOYSA-N ethane-1,2-diol;16-methylheptadecanoic acid;titanium Chemical compound [Ti].OCCO.CC(C)CCCCCCCCCCCCCCC(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O NCXTWAVJIHJVRV-UHFFFAOYSA-N 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 150000003949 imides Chemical group 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910001410 inorganic ion Inorganic materials 0.000 description 1
- 238000005040 ion trap Methods 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- FUCCZFISQTYRNK-UHFFFAOYSA-N isocyanato(dimethyl)silane Chemical compound C[SiH](C)N=C=O FUCCZFISQTYRNK-UHFFFAOYSA-N 0.000 description 1
- NIZHERJWXFHGGU-UHFFFAOYSA-N isocyanato(trimethyl)silane Chemical compound C[Si](C)(C)N=C=O NIZHERJWXFHGGU-UHFFFAOYSA-N 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- LUCXVPAZUDVVBT-UHFFFAOYSA-N methyl-[3-(2-methylphenoxy)-3-phenylpropyl]azanium;chloride Chemical compound Cl.C=1C=CC=CC=1C(CCNC)OC1=CC=CC=C1C LUCXVPAZUDVVBT-UHFFFAOYSA-N 0.000 description 1
- ICCDZMWNLNRHGP-UHFFFAOYSA-N methyl-[3-(oxiran-2-ylmethoxy)propyl]-bis(prop-1-en-2-yloxy)silane Chemical compound CC(=C)O[Si](C)(OC(C)=C)CCCOCC1CO1 ICCDZMWNLNRHGP-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- NWAHZAIDMVNENC-UHFFFAOYSA-N octahydro-1h-4,7-methanoinden-5-yl methacrylate Chemical compound C12CCCC2C2CC(OC(=O)C(=C)C)C1C2 NWAHZAIDMVNENC-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
- CABDEMAGSHRORS-UHFFFAOYSA-N oxirane;hydrate Chemical compound O.C1CO1 CABDEMAGSHRORS-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- LCPDWSOZIOUXRV-UHFFFAOYSA-N phenoxyacetic acid Chemical compound OC(=O)COC1=CC=CC=C1 LCPDWSOZIOUXRV-UHFFFAOYSA-N 0.000 description 1
- CMPQUABWPXYYSH-UHFFFAOYSA-N phenyl phosphate Chemical compound OP(O)(=O)OC1=CC=CC=C1 CMPQUABWPXYYSH-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-M phthalate(1-) Chemical compound OC(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-M 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- XPGAWFIWCWKDDL-UHFFFAOYSA-N propan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCC[O-].CCC[O-].CCC[O-].CCC[O-] XPGAWFIWCWKDDL-UHFFFAOYSA-N 0.000 description 1
- BCWYYHBWCZYDNB-UHFFFAOYSA-N propan-2-ol;zirconium Chemical compound [Zr].CC(C)O.CC(C)O.CC(C)O.CC(C)O BCWYYHBWCZYDNB-UHFFFAOYSA-N 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-M succinate(1-) Chemical compound OC(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-M 0.000 description 1
- JIYXDFNAPHIAFH-UHFFFAOYSA-N tert-butyl 3-tert-butylperoxycarbonylbenzoate Chemical compound CC(C)(C)OOC(=O)C1=CC=CC(C(=O)OC(C)(C)C)=C1 JIYXDFNAPHIAFH-UHFFFAOYSA-N 0.000 description 1
- GJBRNHKUVLOCEB-UHFFFAOYSA-N tert-butyl benzenecarboperoxoate Chemical compound CC(C)(C)OOC(=O)C1=CC=CC=C1 GJBRNHKUVLOCEB-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- 125000001412 tetrahydropyranyl group Chemical group 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present invention relates to a semiconductor adhesive, a cured product, and a semiconductor component.
- Semiconductor components used in semiconductor devices are generally manufactured by bonding a semiconductor element such as a semiconductor chip to a supporting member such as a lead frame with an adhesive (die bonding material).
- an adhesive die bonding material
- gold-silicon eutectic, solder, paste resin composition, etc. have been known as semiconductor adhesives, but in recent years, paste resin compositions have been widely used from the viewpoint of workability and cost. Has been done.
- ⁇ Semiconductor elements such as semiconductor chips tend to have higher integration density with higher integration and miniaturization, and the amount of heat generated per unit area tends to increase. Therefore, in a semiconductor component mounted with a semiconductor element, it is necessary to efficiently dissipate the heat generated from the semiconductor element to the outside.
- solder bonding has been the mainstream for the bonding of power device package elements, but from the perspective of environmental issues, there is a growing trend toward deleading solder.
- semiconductor adhesives containing resin components as adhesives that replace solder.
- the present invention aims to provide an adhesive for semiconductors having excellent thermal conductivity and a cured product thereof.
- An object of the present invention is to provide a semiconductor component using the adhesive for semiconductors or a cured product thereof.
- An adhesive for semiconductors contains (A) silver particles and (B) a monomer having a (meth)acryloyl group, and the (A) component is the first silver particle.
- the BET specific surface area of the first silver particles is 0.3 m 2 /g or less, and the average particle diameter of the first silver particles is 7.0 ⁇ m or more.
- the heat generated from the semiconductor element can be efficiently dissipated to the outside.
- a semiconductor component according to another aspect of the present invention includes a support member, a semiconductor element, and an adhesive layer arranged between the support member and the semiconductor element, and the adhesive layer is the above-mentioned adhesive for semiconductors. Alternatively, it includes a cured product thereof.
- the present invention it is possible to provide a semiconductor adhesive having excellent thermal conductivity and a cured product thereof. According to the present invention, the heat generated from the semiconductor element can be efficiently dissipated to the outside. According to the present invention, it is possible to provide a semiconductor component using the semiconductor adhesive or a cured product thereof.
- an application of a semiconductor adhesive or a cured product thereof to a semiconductor component or its manufacture.
- an application of an adhesive for semiconductors or a cured product thereof to adhesion between a semiconductor element and a support member.
- an application of a semiconductor adhesive to a die bonding material can be provided.
- FIG. 1 is a schematic sectional view showing an example of a semiconductor component.
- FIG. 2 is a schematic cross-sectional view showing another example of the semiconductor component.
- the numerical range indicated by using “to” indicates the range including the numerical values before and after “to” as the minimum value and the maximum value, respectively.
- the upper limit value or the lower limit value of the numerical range of a certain stage can be arbitrarily combined with the upper limit value or the lower limit value of the numerical range of another stage.
- the upper limit value or the lower limit value of the numerical range may be replaced with the values shown in the examples.
- “A or B” may include either one of A and B, or may include both.
- the materials exemplified in the present specification can be used alone or in combination of two or more kinds.
- the use amount of each component in the composition is the total amount of the plurality of substances present in the composition, unless there is a plurality of substances corresponding to each component in the composition, unless otherwise specified.
- the term “layer” includes not only a structure having a shape formed on the entire surface but also a structure having a partly formed shape when observed as a plan view.
- the term “process” is included in this term as long as the intended action of the process is achieved not only when it is an independent process but also when it cannot be clearly distinguished from other processes. .. “(Meth)acrylate” means at least one of acrylate and corresponding methacrylate. The same applies to other similar expressions such as “(meth)acryloyl”.
- the adhesive for semiconductors according to the present embodiment is a single particle having (A) silver particles (hereinafter, sometimes referred to as “(A) component”. Particles containing silver, for example, silver powder) and (B) (meth)acryloyl group. And (B) a BET specific surface area of the first silver particles is 0.3 m 2 /g. And the average particle size of the first silver particles is 7.0 ⁇ m or more.
- the semiconductor adhesive according to the present embodiment is a conductive composition, and can be used as a conductive composition for bonding a semiconductor element to a supporting member.
- the semiconductor adhesive according to the present embodiment is, for example, a curable (for example, thermosetting) composition.
- the semiconductor adhesive according to the present embodiment can be used as a paste resin composition.
- the cured product according to this embodiment is a cured product of the semiconductor adhesive according to this embodiment.
- the semiconductor adhesive and the cured product thereof according to the present embodiment have excellent thermal conductivity, the heat generated from the semiconductor element can be efficiently dissipated to the outside.
- the reason why the adhesive for semiconductors and the cured product thereof according to the present embodiment have excellent thermal conductivity is not clear, but the present inventors presume as follows.
- the cause is not limited to the following contents. That is, when the first silver particles having a small BET specific surface area and a large average particle diameter are used, it is easy to prevent the number of contact points between silver particles from increasing excessively. It is presumed that excellent heat conductivity can be obtained because the loss is easily suppressed.
- the adhesive for semiconductors contains many silver particles
- the coating workability becomes low due to the increase in viscosity, or the cured product of the adhesive for semiconductors becomes brittle and the adhesion between the semiconductor element and the supporting member is increased.
- the strength may be low.
- the adhesive for semiconductors of the present embodiment even when the adhesive for semiconductors contains many silver particles, it is easy to suppress the increase in viscosity, so that the coating workability is kept high.
- the cured product of the semiconductor adhesive can be easily prevented from becoming brittle, the adhesive strength between the semiconductor element and the supporting member can be kept high. That is, according to the present embodiment, it is possible to provide a semiconductor adhesive having excellent thermal conductivity, coating workability, and adhesive strength, and a cured product thereof.
- the component (A) is a first silver particle having a BET specific surface area of 0.3 m 2 /g or less and an average particle size of 7.0 ⁇ m or more (hereinafter, depending on the case). "(A1) component”) is included. From the viewpoint of easily obtaining excellent adhesive strength, the component (A) further contains second silver particles having a BET specific surface area of more than 0.3 m 2 /g (hereinafter, sometimes referred to as “component (A2)”). Good.
- component (A) one type may be used alone, or two or more types may be used in combination.
- the content of silver in at least one particle of the component (A1) or the component (A2) is preferably 80% by mass or more, more preferably 90% by mass or more, further preferably 95% by mass or more, particularly preferably 98% by mass or more. , 99 mass% or more is extremely preferable.
- At least one particle of the component (A1) or the component (A2) may be a mode in which the particle is substantially composed of silver (substantially 100% by mass of the particle is silver).
- Examples of the shape of the component (A1) include scaly, spherical, lumpy, dendritic, and plate-like shapes, but scaly shape is preferable from the viewpoint of easily obtaining excellent thermal conductivity.
- Examples of the shape of the component (A2) include a scaly shape, a spherical shape, a lump shape, a dendritic shape, and a plate shape, but the scaly shape is preferable from the viewpoint of easily obtaining excellent thermal conductivity.
- Examples of the component (A2) include AgC-271B (BET specific surface area: 0.50 m 2 /g), AgC-221Q3 (BET specific surface area: 0.35 m 2 /g) and AgC- manufactured by Fukuda Metal Foil & Powder Co., Ltd. 212DH (BET specific surface area: 1m 2 / g); CO., LTD Tokuriki chemical Laboratory, Ltd. of the TC-88 (BET specific surface area: 1.05m 2 / g), TC -505C (BET specific surface area: 0.65m 2 / g ) and TC-87 (BET specific surface area: 0.25m 2 / g); Co. ferro Japan in SF-125 (BET specific surface area: 0.17 m 2 / g), and the like.
- (A1) BET surface area of the component is preferably less than 0.3 m 2 / g, more preferably 0.275M 2 / g or less, still is 0.25 m 2 / g or less preferably, particularly preferably 0.225 m 2 / g or less, very preferably 0.2 m 2 / g.
- (A1) BET surface area of the component the easier the viewpoint of give excellent viscosity semiconductor adhesive (viscosity when the paste used), preferably at least 0.1 m 2 / g, more preferably at least 0.125 m 2 / g , more preferably not less than 0.15m 2 / g, 0.175m 2 / g or more is particularly preferable. From these viewpoints, the BET surface area of the component (A1) is preferably 0.1 ⁇ 0.3m 2 / g, more preferably 0.1 ⁇ 0.25m 2 / g.
- (A2) BET surface area of the component the easier the viewpoint of give excellent viscosity semiconductor adhesive (viscosity when the paste used), preferably at least 0.35 m 2 / g, more preferably at least 0.375 M 2 / g , more preferably at least 0.4 m 2 / g, particularly preferably not less than 0.425m 2 / g, very preferably more than 0.45 m 2 / g, very preferably at least 0.475m 2 / g, 0.5m 2 /G or more is even more preferable.
- the BET surface area of the component (A2) is preferably more than 0.3 m 2 /g and 1 m 2 /g or less, and more preferably 0.35 to 1 m 2 /g.
- the average particle size of the component (A1) is such that excellent thermal conductivity is easily obtained (excessive heat loss at the contact points of the silver particles is suppressed by easily suppressing an excessive increase in the contact points between the silver particles. From the viewpoint of (easy to do), it is preferably 7.0 ⁇ m or more, more preferably more than 7.0 ⁇ m, further preferably 7.25 ⁇ m or more, and particularly preferably 7.5 ⁇ m or more.
- the average particle size of the component (A1) is preferably 10 ⁇ m or less, more preferably 9.5 ⁇ m or less, and further preferably 9 ⁇ m or less, from the viewpoint of easily obtaining excellent dischargeability (dischargeability during dispensing) of the adhesive for semiconductors.
- the average particle size of the component (A1) is preferably 7.0 to 10 ⁇ m, more preferably 7.0 to 8.5 ⁇ m, and further preferably 7.5 to 8.0 ⁇ m.
- the average particle size of the component (A1) can be measured by a laser diffraction type particle size distribution measuring device (laser diffraction method).
- the average particle size of the component (A2) is preferably 1 ⁇ m or more, more preferably 1.5 ⁇ m or more, still more preferably 2 ⁇ m or more, from the viewpoint of easily obtaining excellent thermal conductivity.
- the average particle diameter of the component (A2) is preferably 20 ⁇ m or less, more preferably 15 ⁇ m or less, further preferably 10 ⁇ m or less, particularly preferably 8 ⁇ m or less, and particularly preferably 5 ⁇ m or less, from the viewpoint of easily obtaining excellent thermal conductivity. 4 ⁇ m or less is very preferable, and 3 ⁇ m or less is even more preferable. From these viewpoints, the average particle diameter of the component (A2) is preferably 1 to 20 ⁇ m, more preferably 2 to 5 ⁇ m.
- the average particle size of the component (A2) can be measured by a laser diffraction type particle size distribution measuring device (laser diffraction method).
- the content of component (A1) is preferably in the following range based on the total amount of component (A).
- the content of the component (A1) is preferably 40% by mass or more, more preferably 50% by mass or more, and more than 50% by mass from the viewpoint of easily obtaining excellent thermal conductivity and easily reducing the viscosity. Is more preferable, 60% by mass or more is particularly preferable, and 70% by mass or more is extremely preferable.
- the content of the component (A1) is 100% by mass or less, preferably less than 100% by mass, more preferably 95% by mass or less, still more preferably 90% by mass or less, from the viewpoint of easily obtaining excellent adhesive strength. Particularly preferably, it is 80% by mass or less, very preferably 75% by mass or less. From these viewpoints, the content of the component (A1) is preferably 40 to 100% by mass, more preferably 50 to 95% by mass.
- the content of the component (A2) is preferably in the following range based on the total amount of the component (A).
- the content of the component (A2) is preferably more than 0% by mass, more preferably 5% by mass or more, further preferably 10% by mass or more, particularly preferably 15% by mass or more, from the viewpoint of easily obtaining excellent adhesive strength. It is preferably 20% by mass or more and very preferably 25% by mass or more.
- the content of the component (A2) is preferably 60% by mass or less, more preferably 50% by mass or less, and further less than 50% by mass from the viewpoint of easily obtaining excellent thermal conductivity and the viewpoint of easily reducing the viscosity. It is preferably 40% by mass or less, particularly preferably 30% by mass or less. From these viewpoints, the content of the component (A2) is preferably more than 0% by mass and 60% by mass or less, and more preferably 5 to 50% by mass.
- the content of the component (A1) is preferably in the following range based on the total amount of the adhesive for semiconductors (total amount of solids. The same applies below).
- the content of the component (A1) is preferably 30% by mass or more, more preferably 35% by mass or more, further preferably 40% by mass or more from the viewpoint of easily obtaining excellent thermal conductivity and the viewpoint of easily reducing the viscosity. 50% by mass or more is particularly preferable, 55% by mass or more is extremely preferable, and 60% by mass or more is very preferable.
- the content of the component (A1) is preferably 95% by mass or less, more preferably 90% by mass or less, further preferably 85% by mass or less, particularly preferably less than 85% by mass, 80 mass% or less is very preferable, 75 mass% or less is very preferable, 70 mass% or less is still more preferable, and 65 mass% or less is further preferable. From these viewpoints, the content of the component (A1) is preferably 30 to 95% by mass, more preferably 50 to 90% by mass, further preferably 55 to 85% by mass, and particularly preferably 60 to 80% by mass.
- the content of the component (A2) is preferably in the following range based on the total amount of the adhesive for semiconductors. From the viewpoint of easily obtaining excellent adhesive strength, the content of the component (A2) is preferably 2% by mass or more, more preferably 5% by mass or more, further preferably 10% by mass or more, particularly preferably 15% by mass or more, 20 mass% or more is extremely preferable.
- the content of the component (A2) is preferably 50% by mass or less, more preferably less than 50% by mass, and further preferably 45% by mass or less from the viewpoint of easily obtaining excellent thermal conductivity and the viewpoint of easily reducing the viscosity. It is particularly preferably 40% by mass or less, very preferably 35% by mass or less, and very preferably 30% by mass or less. From these viewpoints, the content of the component (A2) is preferably 2 to 50% by mass, more preferably 10 to 40% by mass, and further preferably 20 to 35% by mass.
- the mass ratio of the content of the (A1) component to the content of the (A2) component is preferably in the following range.
- the mass ratio is preferably 0.1 or more, more preferably 0.5 or more, further preferably 1.0 or more, particularly preferably 1.5 or more, and very preferably 2.0 or more.
- the mass ratio is preferably 5.0 or less, more preferably 4.0 or less, further preferably 3.0 or less, particularly preferably 2.0 or less, and 1.5 or less. Is extremely preferable, and 1.0 or less is very preferable. From these viewpoints, the mass ratio is preferably 0.1 to 5.0.
- the content of the component (A) (the total amount of the components (A1) and (A2)) is preferably in the following range based on the total amount of the adhesive for semiconductors. From the viewpoint of easily obtaining excellent thermal conductivity, the content of the component (A) is preferably 30% by mass or more, more preferably 40% by mass or more, further preferably 50% by mass or more, particularly preferably 60% by mass or more. , 70 mass% or more is extremely preferable, 80 mass% or more is very preferable, and 85 mass% or more is even more preferable.
- the content of the component (A) is preferably less than 100 mass%, more preferably 98 mass% or less, further preferably 95 mass% or less, and 92 mass% or less. Particularly preferable, and 90% by mass or less is extremely preferable. From these viewpoints, the content of the component (A) is preferably 30% by mass or more and less than 100% by mass, more preferably 80 to 92% by mass, and further preferably 85 to 90% by mass.
- the content of silver particles having an average particle size of 1 ⁇ m or more and less than 4 ⁇ may be 2% by mass or less, may be less than 2% by mass, or may be 1% by mass or less, based on the total amount of the adhesive for semiconductors. Well, it may be less than 1% by mass.
- the component (A) may not include silver particles having an average particle size of 1 ⁇ m or more and less than 4 ⁇ m.
- Component (B) monomer having a (meth)acryloyl group
- (meth)acrylic acid, (meth)acrylic acid ester or the like can be used.
- the component (B) may not include an imide skeleton and/or a siloxane skeleton.
- the number of (meth)acryloyl groups in the component (B) is preferably 3 or less, more preferably 2 or less, and even more preferably 1 from the viewpoint of easily obtaining excellent adhesive strength.
- the number of (meth)acryloyl groups in the component (B) is 1 or more, and may be 2 or more.
- the molecular weight of the component (B) may be 2000 or less, 1500 or less, 1000 or less, 800 or less, or 600 or less. When the component (B) has two (meth)acryloyl groups, the molecular weight of the component (B) may be 400 or less and 300 or less.
- the component (B) preferably contains a compound represented by the following general formula (b1) from the viewpoint of easily obtaining excellent adhesive strength.
- R 11 represents a hydrogen atom or a methyl group
- R 12 represents a group represented by the following formula
- X represents an alkylene group having 1 to 5 carbon atoms
- n 1 represents 0 to 10 Indicates an integer.
- Examples of the compound represented by the formula (b1) include dicyclopentenyloxyethyl (meth)acrylate, dicyclopentanyloxyethyl (meth)acrylate, dicyclopentenyl (meth)acrylate and dicyclopentanyl (meth)acrylate.
- Dicyclopentenyl acrylate as FA-511A dicyclopentenyloxyethyl acrylate as FA-512A
- dicyclopentenyloxyethyl methacrylate as FA-512M dicyclopentanyl methacrylate
- dicyclopentanyl methacrylate Are commercially available as FA-513M from Hitachi Chemical Co., Ltd.
- the content of the compound represented by the formula (b1) is preferably within the following range based on the total amount of the component (B).
- the content of the compound represented by the formula (b1) is preferably 10% by mass or more, more preferably 20% by mass or more, further preferably 25% by mass or more, and 30% by mass from the viewpoint of easily obtaining excellent thermal conductivity. % Or more is particularly preferable, and 35% by mass or more is extremely preferable.
- the content of the compound represented by the formula (b1) is preferably 95% by mass or less, more preferably 90% by mass or less, further preferably 85% by mass or less, and 80% by mass. % Or less is particularly preferable, and 75% by mass or less is extremely preferable. From these viewpoints, the content of the compound represented by the formula (b1) is preferably 10 to 95% by mass, more preferably 20 to 90% by mass.
- the content of the compound represented by the formula (b1) is preferably within the following range based on the total amount of the adhesive for semiconductors. From the viewpoint of easily obtaining excellent thermal conductivity, the content of the compound represented by the formula (b1) is preferably 0.5% by mass or more, more preferably 1% by mass or more, further 1.2% by mass or more. It is particularly preferably 1.5% by mass or more, and particularly preferably 1.8% by mass or more. The content of the compound represented by the formula (b1) is preferably 10% by mass or less, more preferably 8% by mass or less, further preferably 6% by mass or less, from the viewpoint of easily obtaining excellent thermal conductivity. % Or less is particularly preferable, and 4% by mass or less is extremely preferable. From these viewpoints, the content of the compound represented by the formula (b1) is preferably 0.5 to 10% by mass, more preferably 1 to 8% by mass.
- the component (B) is represented by the following general formula (b22) as a compound represented by the following general formula (b21) as a (meth)acrylic acid ester from the viewpoint of easily obtaining excellent coating workability and adhesive strength. And a compound represented by the following general formula (b23).
- R 21 , R 22 and R 23 each independently represent a hydrogen atom or a methyl group, and n 22 and n 23 each independently represent an integer of 1 to 3.
- Benzyl (meth)acrylate is commercially available as FA-BZA (manufactured by Hitachi Chemical Co., Ltd.)
- phenoxyethyl acrylate is SR-339A (manufactured by Sartomer)
- phenoxyethyl methacrylate is commercially available as CD9087 (manufactured by Sartomer).
- the content of the compounds represented by the formulas (b21) to (b23) is preferably within the following range based on the total amount of the component (B).
- the content of the compounds represented by the formulas (b21) to (b23) is preferably 10% by mass or more, more preferably 20% by mass or more, and further preferably 25% by mass or more, from the viewpoint of easily obtaining excellent thermal conductivity. It is preferably 30% by mass or more, particularly preferably 35% by mass or more.
- the content of the compounds represented by the formulas (b21) to (b23) is preferably 80% by mass or less, more preferably 70% by mass or less, and further preferably 60% by mass or less, from the viewpoint of easily obtaining excellent thermal conductivity. It is preferably 50% by mass or less, particularly preferably 40% by mass or less. From these viewpoints, the content of the compounds represented by the formulas (b21) to (b23) is preferably 10 to 80% by mass, and more preferably 20 to 70% by mass.
- the content of the compounds represented by the formulas (b21) to (b23) is preferably within the following range based on the total amount of the adhesive for semiconductors.
- the content of the compounds represented by the formulas (b21) to (b23) is preferably 0.5% by mass or more, more preferably 1% by mass or more, and 1.2% by mass from the viewpoint of easily obtaining excellent thermal conductivity. % Or more is more preferable, 1.5% by mass or more is particularly preferable, and 1.8% by mass or more is extremely preferable.
- the content of the compounds represented by the formulas (b21) to (b23) is preferably 5% by mass or less, more preferably 4% by mass or less, and further preferably 3% by mass or less, from the viewpoint of easily obtaining excellent thermal conductivity.
- the content of the compounds represented by the formulas (b21) to (b23) is preferably 0.5 to 5% by mass, more preferably 1 to 4% by mass.
- the component (B) is different from the compound represented by the formula (b1), the compound represented by the formula (b21), the compound represented by the formula (b22), and the compound represented by the formula (b23). It may include a monofunctional (meth)acrylic acid ester. Examples of such monofunctional (meth)acrylic acid esters include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate.
- the component (B) may or may not contain the compound represented by the following general formula (b3).
- the content of the compound represented by the formula (b3) may be 1% by mass or less, 0.1% by mass or less, and 0.01% by mass or less based on the total amount of the component (B).
- the content of the compound represented by the formula (b3) may be 1% by mass or less, 0.1% by mass or less, and 0.01% by mass or less based on the total amount of the adhesive for semiconductors. May be
- R 31 represents a hydrogen atom or a methyl group
- Y represents an alkylene group having 1 to 5 carbon atoms
- R 32 to R 36 represent an alkyl group having 1 to 20 carbon atoms
- n3 represents , An integer of 0 to 10 is shown.
- the component (B) may include a polyfunctional (meth)acrylic acid ester.
- the component (B) preferably contains, as a polyfunctional (meth)acrylic acid ester, a compound having two (meth)acryloyloxy groups in one molecule. In this case, it is easy to reduce the generation of bubbles in the adhesive, which causes a reduction in reflow resistance during thermosetting.
- Examples of compounds having two (meth)acryloyloxy groups in one molecule include ethylene glycol di(meth)acrylate, 1,4-butanediol di(meth)acrylate, and 1,6-hexanediol di(meth)acrylate.
- the component (B) may contain a compound represented by the following general formula (b4) as a compound having two (meth)acryloyloxy groups in one molecule from the viewpoint of easily obtaining excellent adhesive strength. preferable.
- R 41 , R 42 , R 43 and R 44 each independently represent a hydrogen atom or a methyl group
- Z 41 and Z 42 each independently represent an alkylene group having 1 to 5 carbon atoms
- n 41 And n42 each independently represent an integer of 1 to 20.
- a compound having three or more (meth)acryloyloxy groups in one molecule can be used as a polyfunctional (meth)acrylic acid ester.
- the compound having three or more (meth)acryloyloxy groups in one molecule include trimethylolpropane tri(meth)acrylate, ethylene oxide-modified trimethylolpropane tri(meth)acrylate, and propylene oxide-modified trimethylolpropane tri(meth).
- Acrylate ethylene oxide/propylene oxide modified trimethylolpropane tri(meth)acrylate, tetramethylolmethane tri(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth) Examples thereof include acrylate and pentaerythritol tri(meth)acrylate.
- the content of the polyfunctional (meth)acrylic acid ester is preferably in the following range based on the total amount of the component (B).
- the content of the polyfunctional (meth)acrylic acid ester is preferably 5% by mass or more, more preferably 10% by mass or more, further preferably 15% by mass or more, and 20% by mass from the viewpoint of easily obtaining excellent thermal conductivity. % Or more is particularly preferable, and 25% by mass or more is extremely preferable.
- the content of the polyfunctional (meth)acrylic acid ester is preferably 50% by mass or less, more preferably 45% by mass or less, further preferably 40% by mass or less, and 35% by mass, from the viewpoint of easily obtaining excellent thermal conductivity. % Or less is particularly preferable, and 30% by mass or less is extremely preferable. From these viewpoints, the content of the polyfunctional (meth)acrylic acid ester is preferably 5 to 50% by mass, more preferably 10 to 45% by mass.
- the content of polyfunctional (meth)acrylic acid ester is preferably in the following range based on the total amount of the adhesive for semiconductors.
- the content of the polyfunctional (meth)acrylic acid ester is preferably 0.5% by mass or more, more preferably 0.8% by mass or more, still more preferably 1% by mass or more, from the viewpoint of easily obtaining excellent thermal conductivity. It is preferably 1.2% by mass or more, particularly preferably 1.4% by mass or more.
- the content of the polyfunctional (meth)acrylic acid ester is preferably 3% by mass or less, more preferably 2.5% by mass or less, still more preferably 2% by mass or less, from the viewpoint of easily obtaining excellent thermal conductivity.
- the content of the polyfunctional (meth)acrylic acid ester is preferably 0.5 to 3% by mass, more preferably 0.8 to 2.5% by mass.
- the content of the component (B) is preferably in the following range based on the total amount of the adhesive for semiconductors. From the viewpoint of easily obtaining excellent thermal conductivity, the content of the component (B) is preferably 1% by mass or more, more preferably 2% by mass or more, further preferably 3% by mass or more, and particularly preferably 4% by mass or more. 5% by mass or more is extremely preferable. From the viewpoint of easily obtaining excellent thermal conductivity, the content of the component (B) is preferably 10% by mass or less, more preferably less than 10% by mass, further preferably 9% by mass or less, particularly preferably 8% by mass or less. , 7 mass% or less is very preferable, and 6 mass% or less is very preferable. From these viewpoints, the content of the component (B) is preferably 1 to 10% by mass, more preferably 2 to 9% by mass.
- the content of the component (B) is preferably in the following range with respect to 100 parts by mass of the component (A). From the viewpoint of easily obtaining excellent thermal conductivity, the content of the component (B) is preferably 1 part by mass or more, more preferably 3 parts by mass or more, further preferably 4 parts by mass or more, particularly preferably 5 parts by mass or more. , 6 parts by mass or more is extremely preferable. From the viewpoint of easily obtaining excellent thermal conductivity, the content of the component (B) is preferably 20 parts by mass or less, more preferably 15 parts by mass or less, further preferably 10 parts by mass or less, and particularly preferably 8 parts by mass or less. , 7 parts by mass or less is extremely preferable. From these viewpoints, the content of the component (B) is preferably 1 to 20 parts by mass, more preferably 3 to 15 parts by mass.
- the adhesive for semiconductors according to this embodiment may contain a radical polymerization initiator (hereinafter, sometimes referred to as “component (C)”).
- component (C) preferably contains a peroxide from the viewpoint of easily suppressing the generation of voids and the like.
- the decomposition temperature of the peroxide in the rapid heating test is preferably 70 to 170° C. from the viewpoint of easily obtaining excellent curability and viscosity stability of the adhesive for semiconductors.
- component (C) examples include 1,1,3,3-tetramethylperoxy 2-ethylhexanoate, 1,1-bis(t-butylperoxy)cyclohexane and 1,1-bis(t-butylperoxy).
- the content of the component (C) is preferably in the following range with respect to 100 parts by mass of the component (B). From the viewpoint of easily obtaining excellent thermal conductivity, the content of the component (C) is preferably 3 parts by mass or more, more preferably 4 parts by mass or more, further preferably 5 parts by mass or more, particularly preferably 8 parts by mass or more. 10 parts by mass or more is extremely preferable. From the viewpoint of easily obtaining excellent thermal conductivity, the content of the component (C) is preferably 30 parts by mass or less, more preferably 20 parts by mass or less, and further preferably 15 parts by mass or less. From these viewpoints, the content of the component (C) is preferably 3 to 30 parts by mass, more preferably 4 to 20 parts by mass, still more preferably 5 to 15 parts by mass.
- the semiconductor adhesive according to the present embodiment may contain a softening agent (hereinafter sometimes referred to as “component (D)”, excluding compounds corresponding to components (A) to (C)).
- component (D) preferably contains at least one selected from the group consisting of liquid rubber and thermoplastic resins (excluding compounds corresponding to liquid rubber).
- liquid rubber examples include polybutadiene, epoxidized polybutadiene, maleated polybutadiene, acrylonitrile butadiene rubber, acrylonitrile butadiene rubber having a carboxy group (for example, acrylonitrile polybutadiene copolymer having a carboxy group), amino-terminated acrylonitrile-butadiene rubber, vinyl-terminated acrylonitrile-butadiene rubber.
- resins having a polybutadiene skeleton such as rubber and styrene-butadiene rubber.
- the liquid rubber preferably contains at least one selected from the group consisting of epoxidized polybutadiene and acrylonitrile butadiene rubber having a carboxy group, from the viewpoint of easily reducing the elastic modulus of the adhesive for semiconductors. From the viewpoint of easily obtaining excellent coating workability and adhesive strength, it is preferable to use epoxidized polybutadiene and acrylonitrile butadiene rubber having a carboxy group together.
- Epoxidized polybutadiene can be easily obtained by epoxidizing commercially available polybutadiene with hydrogen peroxide solution or peracids.
- the epoxidized polybutadiene is, for example, B-1000, B-3000, G-1000, G-3000 (or more, manufactured by Nippon Soda Co., Ltd.), B-1000, B-2000, B-3000, B-4000 (or more, Nippon Oil Co., Ltd.), R-15HT, R-45HT, R-45M (above, Idemitsu Petroleum Co., Ltd.), Epolide PB-3600, Epolide PB-4700 (above, Daicel Chemical Industries Ltd.), etc. are commercially available. Available as a product.
- the oxirane oxygen concentration of the epoxidized polybutadiene is preferably 3 to 18%, more preferably 6 to 12%.
- the acrylonitrile butadiene rubber having a carboxy group preferably contains a compound represented by the following general formula (d1) from the viewpoint of easily obtaining excellent adhesive strength.
- x and y are each independently a number of 0 or more indicating the average value of the number of repetitions, x/y is 95/5 to 50/50, and m is an integer of 5 to 50. .. ]
- Hycar CTBN-2009 ⁇ 162, CTBN-1300 ⁇ 31, CTBN-1300 ⁇ 8, CTBN-1300 ⁇ 13, CTBN-1009SP-S, CTBNX-1300 ⁇ 9 are available as commercial products.
- the number average molecular weight of the liquid rubber is preferably 500 or more, more preferably 1000 or more, from the viewpoint of easily obtaining a sufficient flexibility effect.
- the number average molecular weight of the liquid rubber is preferably 10,000 or less, more preferably 5,000 or less, from the viewpoint of suppressing an excessive increase in the viscosity of the adhesive for semiconductors and easily obtaining excellent coating workability. From these viewpoints, the number average molecular weight of the liquid rubber is preferably 500 to 10000, more preferably 1000 to 5000.
- the number average molecular weight of the liquid rubber can be measured by gel permeation chromatography (GPC) under the following conditions and converted from a calibration curve using standard polystyrene.
- the liquid rubber content is preferably in the following range based on the total amount of component (D).
- the content of the liquid rubber is preferably 5% by mass or more, more preferably 8% by mass or more, and further preferably 10% by mass or more, from the viewpoint of easily obtaining excellent thermal conductivity and easily obtaining excellent adhesive strength. It is preferably 14% by mass or more and particularly preferably.
- the content of the liquid rubber is preferably 50% by mass or less, more preferably 40% by mass or less, and further preferably 35% by mass or less from the viewpoint of easily obtaining excellent thermal conductivity and easily obtaining excellent adhesive strength. It is preferably 30% by mass or less, and particularly preferably 30% by mass or less. From these viewpoints, the content of the liquid rubber is preferably 5 to 50% by mass, more preferably 8 to 40% by mass.
- thermoplastic resin examples include polyvinyl acetate, polymethyl acrylate, ⁇ -caprolactone modified polyester, phenoxy resin, polyimide, and the copolymer represented by the following general formula (d2).
- R 51 and R 52 are each independently a hydrogen atom or a methyl group
- r, s, t, and u are each independently a number of 0 or more indicating the average value of the number of repetitions
- r+t is It is 0.1 or more (preferably 0.3 to 5)
- s+u is 1 or more (preferably 1 to 100).
- the number average molecular weight of the thermoplastic resin is preferably 10,000 or more, and more preferably 20,000 or more from the viewpoint that a sufficient flexibility effect is easily obtained.
- the number average molecular weight of the thermoplastic resin is preferably 300,000 or less, and more preferably 200,000 or less from the viewpoint that an excessive increase in the viscosity of the adhesive for semiconductors is suppressed and excellent coating workability is easily obtained. From these viewpoints, the number average molecular weight of the thermoplastic resin is preferably 10,000 to 300,000, and more preferably 20,000 to 200,000.
- the number average molecular weight of the thermoplastic resin can be measured by the same method as the number average molecular weight of liquid rubber.
- the thermoplastic resin content is preferably in the following range based on the total amount of component (D).
- the content of the thermoplastic resin is preferably 50% by mass or more, more preferably 60% by mass or more, and 65% by mass or more from the viewpoint of easily obtaining excellent thermal conductivity and the viewpoint of easily obtaining excellent adhesive strength. More preferably, 70% by mass or more is particularly preferable.
- the content of the thermoplastic resin is preferably 95% by mass or less, more preferably 92% by mass or less, and 90% by mass or less from the viewpoint of easily obtaining excellent thermal conductivity and easily obtaining excellent adhesive strength. More preferably, 86% by mass or less is particularly preferable. From these viewpoints, the content of the thermoplastic resin is preferably 50 to 95% by mass, more preferably 60 to 92% by mass.
- the content of the component (D) is preferably in the following range with respect to 100 parts by mass of the component (B).
- the content of the component (D) is preferably 30 parts by mass or more, more preferably 40 parts by mass or more, further preferably 50 parts by mass or more, and 60 parts by mass or more from the viewpoint that a sufficient softening effect is easily obtained.
- the content of the component (D) is preferably 100 parts by mass or less, more preferably 80 parts by mass or less, from the viewpoint that an excessive increase in viscosity of the semiconductor adhesive is suppressed and excellent coating workability is easily obtained. It is more preferably 70 parts by mass or less. From these viewpoints, the content of the component (D) is preferably 30 to 100 parts by mass, more preferably 40 to 80 parts by mass, and further preferably 50 to 70 parts by mass.
- the adhesive for semiconductors according to the present embodiment may contain a coupling agent (hereinafter, sometimes referred to as “(E) component”).
- a coupling agent hereinafter, sometimes referred to as “(E) component”.
- the component (E) include a silane coupling agent, a titanate coupling agent, an aluminum coupling agent, a zirconate coupling agent, and a zircoaluminate coupling agent.
- silane coupling agents include methyltrimethoxysilane, methyltriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltriacetoxysilane, and vinyl-tris(2-methoxyethoxy).
- Silane ⁇ -methacryloxypropyltrimethoxysilane, ⁇ -methacryloxypropylmethyldimethoxysilane, methyltri(methacryloxyethoxy)silane, ⁇ -acryloxypropyltrimethoxysilane, ⁇ -aminopropyltrimethoxysilane, ⁇ -aminopropyl Triethoxysilane, N- ⁇ -(aminoethyl)- ⁇ -aminopropyltrimethoxysilane, N- ⁇ -(aminoethyl)- ⁇ -aminopropylmethyldimethoxysilane, N- ⁇ -(N-vinylbenzylaminoethyl) - ⁇ -aminopropyltrimethoxysilane, ⁇ -anilinopropyltrimethoxysilane, ⁇ -ureidopropyltrimethoxysilane, ⁇ -ureidopropyltrie
- titanate coupling agents include isopropyl triisostearoyl titanate, isopropyl tridodecylbenzenesulfonyl titanate, isopropyl tris(dioctyl pyrophosphate) titanate, tetraisopropyl bis(dioctyl phosphite) titanate, tetraoctyl bis(ditridecyl phosphite) titanate.
- Tetra(2,2-diallyloxymethyl-1-butyl)bis(di-tridecyl)phosphite titanate bis(dioctylpyrophosphate)oxyacetate titanate, bis(dioctylpyrophosphate)ethylene titanate, isopropyl trioctanoyl titanate, Examples thereof include isopropyl dimethacryl isostearoyl titanate, isopropyl (dioctyl phosphate) titanate, isopropyl tricumyl phenyl titanate, isopropyl tri(N-aminoethyl aminoethyl) titanate, dicumyl phenyloxyacetate titanate, and diisostearoyl ethylene titanate.
- Examples of the aluminum-based coupling agent include acetoalkoxyaluminum diisopropionate.
- the zirconate coupling agent include tetrapropyl zirconate, tetrabutyl zirconate, tetra(triethanolamine) zirconate, tetraisopropyl zirconate, zirconium acetylacetonate, acetylacetone zirconium butyrate, zirconium stearate butyrate. ..
- the content of the component (E) is preferably in the following range with respect to 100 parts by mass of the component (B).
- the content of the component (E) is preferably 3 parts by mass or more, more preferably 5 parts by mass or more, and further preferably 8 parts by mass or more, from the viewpoint of easily obtaining excellent adhesive strength.
- the content of the component (E) is preferably 30 parts by mass or less, more preferably 20 parts by mass or less, and further preferably 10 parts by mass or less, from the viewpoint of easily obtaining excellent adhesive strength. From these viewpoints, the content of the component (E) is preferably 3 to 30 parts by mass, more preferably 5 to 20 parts by mass.
- the semiconductor adhesive according to the present embodiment is, if necessary, a moisture absorbent such as calcium oxide or magnesium oxide; a fluorosurfactant, a nonionic surfactant, a wettability improver such as a higher fatty acid; a silicone oil or the like. Defoaming agent; an ion trap agent such as an inorganic ion exchanger; a solvent and the like.
- the viscosity may be adjusted by using a solvent.
- the content of the solvent is preferably 3% by mass or less based on the total amount of the adhesive for semiconductors, from the viewpoint of easily suppressing the generation of voids and the like.
- the semiconductor adhesive according to the present embodiment does not need to contain a solvent from the viewpoint of easily suppressing the generation of outgas and easily obtaining good wettability of the adhesive with respect to the supporting member (there is no solvent. Good).
- the viscosity (25° C.) of the semiconductor adhesive according to the present embodiment at a rotation speed of 0.5 rpm is preferably 300 Pa ⁇ s or less, more preferably 200 Pa ⁇ s or less, from the viewpoint of easily obtaining excellent coating workability. It is more preferably 150 Pa ⁇ s or less, particularly preferably 100 Pa ⁇ s or less, extremely preferably 80 Pa ⁇ s or less, very preferably 70 Pa ⁇ s or less, and even more preferably 65 Pa ⁇ s or less.
- the viscosity (25° C.) at a rotation speed of 0.5 rpm of the adhesive for a semiconductor according to the present embodiment is 30 Pa from the viewpoint that it is easy to obtain the excellent storage stability of the adhesive for a semiconductor because the sedimentation of silver particles is easily suppressed.
- the viscosity (25° C.) of the adhesive for semiconductors at a rotation speed of 0.5 rpm is preferably 30 to 300 Pa ⁇ s.
- the viscosity (25° C.) at the rotation speed of 5 rpm of the adhesive for a semiconductor according to the present embodiment is preferably 40 Pa ⁇ s or less, more preferably 35 Pa ⁇ s or less, and 30 Pa ⁇ s from the viewpoint of easily obtaining excellent coating workability. s or less is more preferable, and 25 Pa ⁇ s or less is particularly preferable.
- the viscosity (25° C.) of the adhesive for semiconductors according to the present embodiment at a rotation speed of 5 rpm is 10 Pa ⁇ s from the viewpoint that it is easy to suppress sedimentation of silver particles, and thus it is easy to obtain excellent storage stability of the adhesive for semiconductors.
- the above is preferable, 15 Pa ⁇ s or more is more preferable, and 20 Pa ⁇ s or more is further preferable.
- the viscosity (25° C.) of the semiconductor adhesive at a rotation speed of 5 rpm is preferably 10 to 40 Pa ⁇ s.
- the viscosity can be measured using a Brookfield viscometer.
- the semiconductor component according to the present embodiment includes a support member, a semiconductor element, and an adhesive layer disposed between the support member and the semiconductor element, and the adhesive layer is the semiconductor adhesive according to the present embodiment. Alternatively, it includes a cured product thereof.
- the semiconductor element is mounted on the support member via the adhesive layer.
- the adhesive layer is in contact with the support member and the semiconductor element.
- the semiconductor device according to this embodiment includes the semiconductor component according to this embodiment.
- a lead frame such as 42 alloy lead frame, copper lead frame, palladium PPF lead frame; glass epoxy substrate (substrate made of glass fiber reinforced epoxy resin), BT substrate (cyanate monomer) And an organic substrate such as a BT resin substrate comprising an oligomer thereof and bismaleimide).
- semiconductor elements include ICs, LSIs, LED chips and the like.
- the thickness of the semiconductor element may be 600 ⁇ m or less, 500 ⁇ m or less, and 400 ⁇ m or less.
- the semiconductor component according to the present embodiment may include a sealing portion that seals a part or all of the semiconductor element.
- a transparent resin can be used as a constituent material of the sealing portion.
- the sealing portion may seal a part or all of the support member.
- the method for manufacturing a semiconductor component according to this embodiment includes an adhesive layer forming step of disposing the semiconductor adhesive according to this embodiment between a support member and a semiconductor element to form an adhesive layer.
- the adhesive for semiconductors according to the present embodiment can be obtained by collectively or dividing the constituent components and mixing them using a stirrer, a hybrid mixer, a liquor machine, a three-roll, a planetary mixer or the like.
- the method for manufacturing a semiconductor component according to the present embodiment may include a step of curing (thermosetting, etc.) the adhesive layer to obtain a cured product after the adhesive layer forming step.
- the method for manufacturing a semiconductor component according to this embodiment may include a wire bonding step of wire bonding a semiconductor element after the adhesive layer forming step.
- the method for manufacturing a semiconductor component according to this embodiment may include a step of sealing the semiconductor element after the adhesive layer forming step.
- the semiconductor adhesive for example, first, apply the semiconductor adhesive on the support member by a dispensing method, a screen printing method, a stamping method, or the like, and then press-bond the semiconductor element. Then, the adhesive for semiconductors is heated and cured using a heating device (oven, heat block, etc.). Furthermore, after the wire bonding step, the semiconductor element can be sealed by a usual method.
- the temperature of the above-mentioned heat curing varies depending on the conditions such as long-time curing at low temperature and fast curing at high temperature, but is, for example, 150 to 220° C. (preferably 180 to 200° C.) for 30 seconds to 2 hours (preferably 1 hour to 1 hour 30 minutes).
- FIG. 1 is a schematic cross-sectional view showing an example of a semiconductor component according to this embodiment.
- the semiconductor component 10 includes a support member 11, a semiconductor element 13, an adhesive layer 15, and a sealing portion 17.
- the adhesive layer 15 is disposed between the support member 11 and the semiconductor element 13, and contains the semiconductor adhesive according to the present embodiment or a cured product thereof.
- the sealing portion 17 seals the support member 11, the semiconductor element 13, and the adhesive layer 15.
- the semiconductor element 13 is connected to the lead frame 19b via the wire 19a.
- FIG. 2 is a schematic cross-sectional view showing another example of the semiconductor component according to this embodiment.
- the semiconductor component 20 includes a support member 21, a semiconductor element (LED chip) 23, an adhesive layer 25, and a sealing portion 27.
- the support member 21 has a substrate 21a and a lead frame 21b formed so as to surround the substrate 21a.
- the adhesive layer 25 is disposed between the support member 21 and the semiconductor element 23, and includes the semiconductor adhesive according to the present embodiment or a cured product thereof.
- the sealing portion 27 seals the semiconductor element 23 and the adhesive layer 25.
- the semiconductor element 23 is connected to the lead frame 21b via a wire 29.
- Trigonox 22-70E (1,1-bis(t-butylperoxy)cyclohexane, manufactured by Kayaku Akzo Co., Ltd.
- EPORIDE PB-4700 Epoxidized polybutadiene, manufactured by Daicel Chemical Industries, Ltd., trade name, epoxy equivalent: 152.4 to 177.8, number average molecular weight: 3500
- CTBN-1009SP-S acrylonitrile polybutadiene copolymer having a carboxy group, Ube Industries, Ltd., trade name, number average molecular weight: 3600
- KBM-403 ( ⁇ -glycidoxypropyltrimethoxysilane, manufactured by Shin-Etsu Chemical Co., Ltd., trade name)
- thermo conductivity A cured product was obtained by heating the adhesive for semiconductors to 180° C. for 1 hour using an oven and then holding it at 180° C. for 1 hour. Then, after measuring the thermal diffusivity, the specific gravity and the specific heat using the following measuring device, the thermal conductivity was calculated by the following formula.
- Thermal diffusivity Laser flash method thermal constant measurement device (Netzsch, LFA 467 HyperFlash)
- Specific heat DSC (QA-200, manufactured by TA Instruments Japan Co., Ltd.)
- viscosity Using a Brookfield viscometer (manufactured by Brookfield Engineering Laboratories, HADV-III U CP), the amount of the adhesive was 0.5 mL, the temperature was 25° C., the rotation speed was 0.5 rpm or 5 rpm. The viscosity was obtained.
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Abstract
Description
本実施形態に係る半導体用接着剤は、(A)銀粒子(以下、場合により「(A)成分」という。銀を含む粒子。例えば銀粉)と、(B)(メタ)アクリロイル基を有する単量体(以下、場合により「(B)成分」という)と、を含有し、(A)成分が第1の銀粒子を含み、第1の銀粒子のBET比表面積が0.3m2/g以下であり、第1の銀粒子の平均粒径が7.0μm以上である。 <Semiconductor adhesives and cured products>
The adhesive for semiconductors according to the present embodiment is a single particle having (A) silver particles (hereinafter, sometimes referred to as “(A) component”. Particles containing silver, for example, silver powder) and (B) (meth)acryloyl group. And (B) a BET specific surface area of the first silver particles is 0.3 m 2 /g. And the average particle size of the first silver particles is 7.0 μm or more.
(A)成分は、優れた熱伝導性を得る観点から、BET比表面積が0.3m2/g以下であると共に平均粒径が7.0μm以上である第1の銀粒子(以下、場合により「(A1)成分」という)を含む。(A)成分は、優れた接着強度を得やすい観点から、BET比表面積が0.3m2/gを超える第2の銀粒子(以下、場合により「(A2)成分」という)を更に含んでよい。(A)成分は、1種を単独で又は2種以上を組み合わせて用いることができる。 (Component (A): silver particles)
From the viewpoint of obtaining excellent thermal conductivity, the component (A) is a first silver particle having a BET specific surface area of 0.3 m 2 /g or less and an average particle size of 7.0 μm or more (hereinafter, depending on the case). "(A1) component") is included. From the viewpoint of easily obtaining excellent adhesive strength, the component (A) further contains second silver particles having a BET specific surface area of more than 0.3 m 2 /g (hereinafter, sometimes referred to as “component (A2)”). Good. As the component (A), one type may be used alone, or two or more types may be used in combination.
(B)成分としては、(メタ)アクリル酸、(メタ)アクリル酸エステル等を用いることができる。(B)成分は、イミド骨格及び/又はシロキサン骨格を含まなくてよい。(B)成分における(メタ)アクリロイル基の数は、優れた接着強度が得られやすい観点から、3以下が好ましく、2以下がより好ましく、1が更に好ましい。(B)成分における(メタ)アクリロイル基の数は、1以上であり、2以上であってよい。(B)成分の分子量は、2000以下であってよく、1500以下であってよく、1000以下であってよく、800以下であってよく、600以下であってよい。(B)成分が2つの(メタ)アクリロイル基を有する場合、(B)成分の分子量は、400以下であってよく、300以下であってよい。 (Component (B): monomer having a (meth)acryloyl group)
As the component (B), (meth)acrylic acid, (meth)acrylic acid ester or the like can be used. The component (B) may not include an imide skeleton and/or a siloxane skeleton. The number of (meth)acryloyl groups in the component (B) is preferably 3 or less, more preferably 2 or less, and even more preferably 1 from the viewpoint of easily obtaining excellent adhesive strength. The number of (meth)acryloyl groups in the component (B) is 1 or more, and may be 2 or more. The molecular weight of the component (B) may be 2000 or less, 1500 or less, 1000 or less, 800 or less, or 600 or less. When the component (B) has two (meth)acryloyl groups, the molecular weight of the component (B) may be 400 or less and 300 or less.
本実施形態に係る半導体用接着剤は、ラジカル重合開始剤(以下、場合により「(C)成分」という)を含有してよい。(C)成分は、ボイド等の発生を抑制しやすい観点から、過酸化物を含むことが好ましい。急速加熱試験における過酸化物の分解温度は、半導体用接着剤の優れた硬化性及び粘度安定性が得られやすい観点から、70~170℃が好ましい。 (Component (C): radical polymerization initiator)
The adhesive for semiconductors according to this embodiment may contain a radical polymerization initiator (hereinafter, sometimes referred to as “component (C)”). The component (C) preferably contains a peroxide from the viewpoint of easily suppressing the generation of voids and the like. The decomposition temperature of the peroxide in the rapid heating test is preferably 70 to 170° C. from the viewpoint of easily obtaining excellent curability and viscosity stability of the adhesive for semiconductors.
本実施形態に係る半導体用接着剤は、可とう化剤(以下、場合により「(D)成分」という。(A)~(C)成分に該当する化合物を除く)を含有してよい。(D)成分は、液状ゴム及び熱可塑性樹脂(液状ゴムに該当する化合物を除く)からなる群より選ばれる少なくとも一種を含むことが好ましい。 (Component (D): softening agent)
The semiconductor adhesive according to the present embodiment may contain a softening agent (hereinafter sometimes referred to as “component (D)”, excluding compounds corresponding to components (A) to (C)). The component (D) preferably contains at least one selected from the group consisting of liquid rubber and thermoplastic resins (excluding compounds corresponding to liquid rubber).
[GPC条件]
ポンプ:日立 L-6000型(株式会社日立製作所製)
検出器:日立 L-3300 RI(株式会社日立製作所製)
カラム:Gelpack GL-R420+Gelpack GL-R430+Gelpack GL-R430(計3本)(日立化成株式会社製、商品名)
溶離液:THF
試料濃度:250mg/5mL
注入量:50μL
圧力:441Pa(45kgf/cm2)
流量:1.75mL/分 The number average molecular weight of the liquid rubber is preferably 500 or more, more preferably 1000 or more, from the viewpoint of easily obtaining a sufficient flexibility effect. The number average molecular weight of the liquid rubber is preferably 10,000 or less, more preferably 5,000 or less, from the viewpoint of suppressing an excessive increase in the viscosity of the adhesive for semiconductors and easily obtaining excellent coating workability. From these viewpoints, the number average molecular weight of the liquid rubber is preferably 500 to 10000, more preferably 1000 to 5000. The number average molecular weight of the liquid rubber can be measured by gel permeation chromatography (GPC) under the following conditions and converted from a calibration curve using standard polystyrene.
[GPC conditions]
Pump: Hitachi L-6000 (manufactured by Hitachi, Ltd.)
Detector: Hitachi L-3300 RI (manufactured by Hitachi, Ltd.)
Column: Gelpack GL-R420 + Gelpack GL-R430 + Gelpack GL-R430 (3 in total) (Hitachi Chemical Co., Ltd., trade name)
Eluent: THF
Sample concentration: 250mg/5mL
Injection volume: 50 μL
Pressure: 441 Pa (45 kgf/cm 2 )
Flow rate: 1.75 mL/min
本実施形態に係る半導体用接着剤は、カップリング剤(以下、場合により「(E)成分」という)を含有してよい。(E)成分としては、シランカップリング剤、チタネート系カップリング剤、アルミニウム系カップリング剤、ジルコネート系カップリング剤、ジルコアルミネート系カップリング剤等が挙げられる。 (Component (E): coupling agent)
The adhesive for semiconductors according to the present embodiment may contain a coupling agent (hereinafter, sometimes referred to as “(E) component”). Examples of the component (E) include a silane coupling agent, a titanate coupling agent, an aluminum coupling agent, a zirconate coupling agent, and a zircoaluminate coupling agent.
本実施形態に係る半導体用接着剤は、必要に応じて、酸化カルシウム、酸化マグネシウム等の吸湿剤;フッ素系界面活性剤、ノニオン系界面活性剤、高級脂肪酸等の濡れ性向上剤;シリコーン油等の消泡剤;無機イオン交換体等のイオントラップ剤;溶剤などを含有してよい。溶剤を用いることにより粘度を調整してもよい。溶剤を用いる場合、溶剤の含有量は、ボイド等の発生を抑制しやすい観点から、半導体用接着剤の総量を基準として3質量%以下が好ましい。本実施形態に係る半導体用接着剤は、アウトガスの発生を抑制しやすいと共に、支持部材に対する接着剤の良好な濡れ性が得られやすい観点から、溶剤を含有しなくてよい(無溶剤であってよい)。 (Other ingredients)
The semiconductor adhesive according to the present embodiment is, if necessary, a moisture absorbent such as calcium oxide or magnesium oxide; a fluorosurfactant, a nonionic surfactant, a wettability improver such as a higher fatty acid; a silicone oil or the like. Defoaming agent; an ion trap agent such as an inorganic ion exchanger; a solvent and the like. The viscosity may be adjusted by using a solvent. When a solvent is used, the content of the solvent is preferably 3% by mass or less based on the total amount of the adhesive for semiconductors, from the viewpoint of easily suppressing the generation of voids and the like. The semiconductor adhesive according to the present embodiment does not need to contain a solvent from the viewpoint of easily suppressing the generation of outgas and easily obtaining good wettability of the adhesive with respect to the supporting member (there is no solvent. Good).
本実施形態に係る半導体部品は、支持部材と、半導体素子と、支持部材及び半導体素子の間に配置された接着剤層と、を備え、接着剤層が、本実施形態に係る半導体用接着剤又はその硬化物を含む。半導体素子は、接着剤層を介して支持部材上に搭載されている。接着剤層は、支持部材及び半導体素子に接している。本実施形態に係る半導体部品では、本実施形態に係る半導体用接着剤を用いることにより、半導体素子から発生した熱を外部に効率的に放散することができると共に、半導体素子と支持部材との高い接着強度を得ることができる。本実施形態に係る半導体装置は、本実施形態に係る半導体部品を備える。 <Semiconductor parts>
The semiconductor component according to the present embodiment includes a support member, a semiconductor element, and an adhesive layer disposed between the support member and the semiconductor element, and the adhesive layer is the semiconductor adhesive according to the present embodiment. Alternatively, it includes a cured product thereof. The semiconductor element is mounted on the support member via the adhesive layer. The adhesive layer is in contact with the support member and the semiconductor element. In the semiconductor component according to the present embodiment, by using the adhesive for a semiconductor according to the present embodiment, heat generated from the semiconductor element can be efficiently dissipated to the outside, and the semiconductor element and the supporting member are highly expensive. Adhesive strength can be obtained. The semiconductor device according to this embodiment includes the semiconductor component according to this embodiment.
(銀粒子)
AgC-221PA(福田金属箔粉工業株式会社製、商品名、形状:鱗片状、BET比表面積:0.20m2/g、平均粒径:7.5μm)
AgC-271B(福田金属箔粉工業株式会社製、商品名、形状:鱗片状、BET比表面積:0.50m2/g、平均粒径:2.1μm)
AgC-221Q3(福田金属箔粉工業株式会社製、商品名、形状:鱗片状、BET比表面積:0.35m2/g)
TC-88(株式会社徳力化学研究所製、商品名、形状:鱗片状、BET比表面積:1.05m2/g) <Components of adhesive for semiconductors>
(Silver particles)
AgC-221PA (manufactured by Fukuda Metal Foil & Powder Co., Ltd., trade name, shape: scaly, BET specific surface area: 0.20 m 2 /g, average particle size: 7.5 μm)
AgC-271B (manufactured by Fukuda Metal Foil & Powder Co., Ltd., trade name, shape: scaly, BET specific surface area: 0.50 m 2 /g, average particle diameter: 2.1 μm)
AgC-221Q3 (manufactured by Fukuda Metal Foil & Powder Co., Ltd., trade name, shape: scaly, BET specific surface area: 0.35 m 2 /g)
TC-88 (manufactured by Tokuriki Kagaku Kenkyusho Co., Ltd., trade name, shape: scaly, BET specific surface area: 1.05 m 2 /g)
FA-512A(ジシクロペンテニルオキシエチルアクリレート、日立化成株式会社製、商品名、下記式(b51)で表される化合物)
SR-339A(2-フェノキシエチルアクリレート、サートマー社製、商品名、下記式(b52)で表される化合物)
SR-349(EO変性ビスフェノールAジアクリレート、サートマー社製、商品名、下記式(b53)で表される化合物)
FA-512A (dicyclopentenyloxyethyl acrylate, manufactured by Hitachi Chemical Co., Ltd., trade name, compound represented by the following formula (b51))
SR-339A (2-phenoxyethyl acrylate, manufactured by Sartomer Co., Ltd., trade name, compound represented by the following formula (b52))
SR-349 (EO-modified bisphenol A diacrylate, manufactured by Sartomer, trade name, compound represented by the following formula (b53))
トリゴノックス22-70E(1,1-ビス(t-ブチルパーオキシ)シクロヘキサン、化薬アクゾ株式会社製、商品名) (Radical polymerization initiator)
Trigonox 22-70E (1,1-bis(t-butylperoxy)cyclohexane, manufactured by Kayaku Akzo Co., Ltd.)
エポリードPB-4700(エポキシ化ポリブタジエン、ダイセル化学工業株式会社製、商品名、エポキシ当量:152.4~177.8、数平均分子量:3500)
CTBN-1009SP-S(カルボキシ基を有するアクリロニトリルポリブタジエン共重合体、宇部興産株式会社製、商品名、数平均分子量:3600) (Flexibility agent)
EPORIDE PB-4700 (Epoxidized polybutadiene, manufactured by Daicel Chemical Industries, Ltd., trade name, epoxy equivalent: 152.4 to 177.8, number average molecular weight: 3500)
CTBN-1009SP-S (acrylonitrile polybutadiene copolymer having a carboxy group, Ube Industries, Ltd., trade name, number average molecular weight: 3600)
KBM-403(γ-グリシドキシプロピルトリメトキシシラン、信越化学工業株式会社製、商品名) (Coupling agent)
KBM-403 (γ-glycidoxypropyltrimethoxysilane, manufactured by Shin-Etsu Chemical Co., Ltd., trade name)
表1の各成分(配合量の単位:質量部)を混合した後、ハイブリットミキサを用いて混練した。次に、666.61Pa(5Torr)以下で3分間脱泡処理を行うことにより半導体用接着剤(導電性組成物)を得た。 <Preparation of adhesive for semiconductors>
The components shown in Table 1 (unit of blending amount: parts by mass) were mixed and then kneaded using a hybrid mixer. Next, defoaming treatment was performed at 666.61 Pa (5 Torr) or less for 3 minutes to obtain a semiconductor adhesive (conductive composition).
熱伝導率、粘度及びダイシェア強度(接着強度)を下記に示す方法で評価した。結果を表1に示す。ダイシェア強度は実施例についてのみ評価した。 <Evaluation>
The thermal conductivity, viscosity and die shear strength (adhesive strength) were evaluated by the methods shown below. The results are shown in Table 1. The die shear strength was evaluated only for the examples.
オーブンを用いて半導体用接着剤を180℃まで1時間で昇温した後に180℃で1時間保持することにより硬化物を得た。そして、下記測定装置を用いて熱拡散率、比重及び比熱を測定した後、下記式によって熱伝導率を算出した。
[測定装置]
熱拡散率:レーザフラッシュ法熱定数測定装置(Netzsch製、LFA 467 HyperFlash)
比熱:DSC(ティー・エイ・インスツルメント・ジャパン株式会社製、Q-200)
比重:電子比重計(アルファミラージュ株式会社製、SD-200L)
[算出式]
λ=α×ρ×Cp
λ:熱伝導率(W/m/K)
α:熱拡散率(mm2/s)
ρ:比重(g/cm3)
Cp:比熱(J/g/K) (Thermal conductivity)
A cured product was obtained by heating the adhesive for semiconductors to 180° C. for 1 hour using an oven and then holding it at 180° C. for 1 hour. Then, after measuring the thermal diffusivity, the specific gravity and the specific heat using the following measuring device, the thermal conductivity was calculated by the following formula.
[measuring device]
Thermal diffusivity: Laser flash method thermal constant measurement device (Netzsch, LFA 467 HyperFlash)
Specific heat: DSC (QA-200, manufactured by TA Instruments Japan Co., Ltd.)
Specific gravity: Electronic hydrometer (Alpha Mirage, SD-200L)
[Calculation formula]
λ=α×ρ×C p
λ: thermal conductivity (W/m/K)
α: thermal diffusivity (mm 2 /s)
ρ: Specific gravity (g/cm 3 )
C p : Specific heat (J/g/K)
ブルックフィールド型粘度計(Brookfield Engineering Laboratories製、HADV-III U CP)を用いて、接着剤量0.5mL、温度25℃、回転数0.5rpm又は5rpmで3分間回転後の半導体用接着剤の粘度を得た。 (viscosity)
Using a Brookfield viscometer (manufactured by Brookfield Engineering Laboratories, HADV-III U CP), the amount of the adhesive was 0.5 mL, the temperature was 25° C., the rotation speed was 0.5 rpm or 5 rpm. The viscosity was obtained.
半導体用接着剤を銀リングめっき付き銅リードフレーム上に約1.5mg塗布した後、半導体用接着剤上に5mm×5mmのシリコンチップ(厚さ:400μm)を圧着した。さらに、オーブンを用いて180℃まで30分で昇温した後に180℃で1時間保持して半導体用接着剤を硬化させて半導体部品を得た。自動接着力試験装置(BT4000、Dage社製)を用いて、半導体部品の250℃における剪断接着強度(MPa)を測定した。10個の半導体部品の測定結果の平均値をダイシェア強度の測定結果として得た。 (Die shear strength)
About 1.5 mg of the adhesive for semiconductors was applied onto the copper lead frame with silver ring plating, and then a 5 mm×5 mm silicon chip (thickness: 400 μm) was pressure-bonded onto the adhesive for semiconductor. Further, the temperature was raised to 180° C. in 30 minutes using an oven, and the temperature was kept at 180° C. for 1 hour to cure the adhesive for semiconductors to obtain a semiconductor component. The shear adhesive strength (MPa) at 250° C. of the semiconductor component was measured using an automatic adhesive strength tester (BT4000, manufactured by Dage). The average value of the measurement results of 10 semiconductor components was obtained as the measurement result of the die shear strength.
Claims (11)
- (A)銀粒子と、(B)(メタ)アクリロイル基を有する単量体と、を含有し、
前記(A)成分が第1の銀粒子を含み、
前記第1の銀粒子のBET比表面積が0.3m2/g以下であり、
前記第1の銀粒子の平均粒径が7.0μm以上である、半導体用接着剤。 Containing (A) silver particles and (B) a monomer having a (meth)acryloyl group,
The component (A) contains first silver particles,
The BET specific surface area of the first silver particles is 0.3 m 2 /g or less,
An adhesive for semiconductors, wherein the average particle size of the first silver particles is 7.0 μm or more. - 前記第1の銀粒子の形状が鱗片状である、請求項1に記載の半導体用接着剤。 The adhesive for a semiconductor according to claim 1, wherein the first silver particles have a scaly shape.
- 前記第1の銀粒子の平均粒径が7.0~8.5μmである、請求項1又は2に記載の半導体用接着剤。 The adhesive for a semiconductor according to claim 1 or 2, wherein the first silver particles have an average particle size of 7.0 to 8.5 μm.
- 前記第1の銀粒子の含有量が前記(A)成分の総量を基準として50質量%以上である、請求項1~3のいずれか一項に記載の半導体用接着剤。 The adhesive for semiconductors according to any one of claims 1 to 3, wherein the content of the first silver particles is 50% by mass or more based on the total amount of the component (A).
- 前記第1の銀粒子の含有量が、半導体用接着剤の総量を基準として30~95質量%である、請求項1~4のいずれか一項に記載の半導体用接着剤。 The adhesive for semiconductors according to any one of claims 1 to 4, wherein the content of the first silver particles is 30 to 95 mass% based on the total amount of the adhesive for semiconductors.
- 前記(A)成分が第2の銀粒子を更に含み、
前記第2の銀粒子のBET比表面積が0.3m2/gを超える、請求項1~5のいずれか一項に記載の半導体用接着剤。 The component (A) further contains second silver particles,
The adhesive for semiconductors according to any one of claims 1 to 5, wherein the BET specific surface area of the second silver particles exceeds 0.3 m 2 /g. - 前記(B)成分が、下記一般式(b21)で表される化合物、下記一般式(b22)で表される化合物、及び、下記一般式(b23)で表される化合物からなる群より選ばれる少なくとも一種を含む、請求項1~6のいずれか一項に記載の半導体用接着剤。
- 前記(B)成分の含有量が前記(A)成分100質量部に対して1~20質量部である、請求項1~7のいずれか一項に記載の半導体用接着剤。 The semiconductor adhesive according to any one of claims 1 to 7, wherein the content of the component (B) is 1 to 20 parts by mass relative to 100 parts by mass of the component (A).
- ラジカル重合開始剤を更に含有し、
前記ラジカル重合開始剤の含有量が、前記(B)成分100質量部に対して3~30質量部である、請求項1~8のいずれか一項に記載の半導体用接着剤。 Further contains a radical polymerization initiator,
The adhesive for semiconductors according to any one of claims 1 to 8, wherein the content of the radical polymerization initiator is 3 to 30 parts by mass with respect to 100 parts by mass of the component (B). - 請求項1~9のいずれか一項に記載の半導体用接着剤の硬化物。 A cured product of the adhesive for semiconductors according to any one of claims 1 to 9.
- 支持部材と、半導体素子と、前記支持部材及び前記半導体素子の間に配置された接着剤層と、を備え、
前記接着剤層が、請求項1~9のいずれか一項に記載の半導体用接着剤又はその硬化物を含む、半導体部品。 A support member, a semiconductor element, and an adhesive layer disposed between the support member and the semiconductor element,
A semiconductor component, wherein the adhesive layer contains the adhesive for semiconductors according to any one of claims 1 to 9 or a cured product thereof.
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JP2020558815A JP7222400B2 (en) | 2018-12-10 | 2018-12-10 | Semiconductor adhesives, cured products and semiconductor parts |
CN201880100672.6A CN113396471A (en) | 2018-12-10 | 2018-12-10 | Adhesive for semiconductor, cured product and semiconductor device |
PCT/JP2018/045327 WO2020121379A1 (en) | 2018-12-10 | 2018-12-10 | Adhesive for semiconductor, cured product, and semiconductor component |
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JP2010225312A (en) * | 2009-03-19 | 2010-10-07 | Hitachi Chem Co Ltd | Resin paste composition and semiconductor device |
JP2015135805A (en) * | 2013-12-16 | 2015-07-27 | 日立化成株式会社 | Resin paste composition and semiconductor device |
WO2018034234A1 (en) * | 2016-08-19 | 2018-02-22 | 住友ベークライト株式会社 | Die attach paste and semiconductor device |
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- 2018-12-10 CN CN201880100672.6A patent/CN113396471A/en active Pending
- 2018-12-10 JP JP2020558815A patent/JP7222400B2/en active Active
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JP2010225312A (en) * | 2009-03-19 | 2010-10-07 | Hitachi Chem Co Ltd | Resin paste composition and semiconductor device |
JP2015135805A (en) * | 2013-12-16 | 2015-07-27 | 日立化成株式会社 | Resin paste composition and semiconductor device |
WO2018034234A1 (en) * | 2016-08-19 | 2018-02-22 | 住友ベークライト株式会社 | Die attach paste and semiconductor device |
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