CN113631675A - Semiconductor package, method for manufacturing semiconductor package, and thermally conductive composition used therefor - Google Patents

Semiconductor package, method for manufacturing semiconductor package, and thermally conductive composition used therefor Download PDF

Info

Publication number
CN113631675A
CN113631675A CN202080023193.6A CN202080023193A CN113631675A CN 113631675 A CN113631675 A CN 113631675A CN 202080023193 A CN202080023193 A CN 202080023193A CN 113631675 A CN113631675 A CN 113631675A
Authority
CN
China
Prior art keywords
thermally conductive
conductive composition
particles
metal
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080023193.6A
Other languages
Chinese (zh)
Inventor
渡部直辉
高本真
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=72519866&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN113631675(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Publication of CN113631675A publication Critical patent/CN113631675A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H01L2023/4037—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
    • H01L2023/4068—Heatconductors between device and heatsink, e.g. compliant heat-spreaders, heat-conducting bands

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

The semiconductor package of the present invention includes a substrate, a semiconductor element provided on the substrate, and a heat sink surrounding the periphery of the semiconductor element, and the semiconductor element and the heat sink are bonded by a thermally conductive material having a particle bonding structure formed by sintering metal particles by heat treatment.

Description

Semiconductor package, method for manufacturing semiconductor package, and thermally conductive composition used therefor
Technical Field
The invention relates to a semiconductor package, a method of manufacturing the semiconductor package, and a thermally conductive composition used therefor.
Background
Heretofore, various developments have been made in semiconductor packages having a thermal conductor. As such a technique, for example, a technique described in patent document 1 is known.
Patent document 1 describes a semiconductor package in which a semiconductor element (heat generating element) mounted on an electronic circuit board and a heat sink are bonded to each other via a thermally conductive double-sided tape (a thermally conductive material made of an adhesive) (example 7 and fig. 16 of patent document 1).
Documents of the prior art
Patent document
Patent document 1: international publication No. 2015/072428
Disclosure of Invention
Technical problem to be solved by the invention
However, as a result of the studies conducted by the present inventors, it was clarified that: the semiconductor package described in patent document 1 has room for improvement in heat dissipation characteristics.
Means for solving the problems
Currently, with the increase in performance, the amount of heat generated by a semiconductor element (heat generating element) increases, and thus further improvement in heat dissipation characteristics is required for a semiconductor package.
As a result of studies in such a case, it was found that: even when a thermoplastic gel in which an acrylic adhesive, boron nitride, alumina, or zinc oxide is dispersed is used as a thermally conductive material for bonding a semiconductor element and a heat dissipating member such as a heat spreader, sufficient thermal conductivity cannot be obtained.
As a result of further studies, the present inventors found that: the present inventors have found that the use of a thermally conductive material having a particle-bonded structure formed by sintering metal particles by heat treatment can improve the thermal conductivity of the thermally conductive material and can bond a semiconductor element and a heat dissipation member to each other, thereby improving the heat dissipation characteristics in a semiconductor package, and have completed the present invention.
According to the present invention, there is provided a semiconductor package including a substrate, a semiconductor element provided on the substrate, and a heat spreader (heat spreader) surrounding a periphery of the semiconductor element, and the semiconductor element and the heat spreader are bonded by a thermally conductive material, characterized in that: the thermally conductive material has a particle-bonded structure formed by sintering metal particles generated by heat treatment.
Further, according to the present invention, there is provided a thermally conductive composition for forming a thermally conductive material in a semiconductor package including a substrate, a semiconductor element provided on the substrate, and a heat sink surrounding the periphery of the semiconductor element, the semiconductor element and the heat sink being bonded by the thermally conductive material, the thermally conductive composition comprising: metal particles; a binder resin; and a monomer, the metal particles being sintered by heat treatment to form a particle-bonded structure.
Further, according to the present invention, there is provided a method of manufacturing a semiconductor package, comprising: a step of providing a semiconductor element on one surface of a substrate such that the other surface of the semiconductor element faces one surface of the substrate; a step of applying a heat conductive composition containing metal particles on a surface of one surface side of the semiconductor element; disposing a heat spreader in contact with the thermally conductive composition and covering at least one surface of the semiconductor element; and a step of heat-treating the structure including the substrate, the semiconductor element, the thermally conductive composition, and the heat spreader, wherein in the step of heat-treating, the semiconductor element and the heat spreader are bonded via a thermally conductive material including a particle-bonded structure formed by sintering the metal particles.
Effects of the invention
The present invention can provide a semiconductor package having excellent heat dissipation characteristics, a method for manufacturing the semiconductor package, and a thermally conductive composition used for the semiconductor package.
Drawings
The above objects and other objects, features and advantages will become more apparent from the following description of preferred embodiments and the accompanying drawings.
Fig. 1 is a cross-sectional view schematically showing an example of a semiconductor package according to the present embodiment.
Fig. 2 shows an SEM image of a cross section of the particle connection structure of example 1.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same components are denoted by the same reference numerals, and the description thereof is omitted as appropriate. The drawing is a schematic view, and does not match the actual size ratio.
An outline of the semiconductor package of the present embodiment will be described.
Fig. 1 is a cross-sectional view schematically showing an example of a semiconductor package according to the present embodiment.
The semiconductor package 100 of the present embodiment includes a substrate 10, a semiconductor element 20, a heat spreader 30, and a thermally conductive material 50. The semiconductor element 20 is provided on the substrate 10, the heat sink 30 surrounds the periphery of the semiconductor element 20, and the heat conductive material 50 bonds the semiconductor element 20 and the heat sink 30.
In the semiconductor package 100, the thermally conductive material 50 has a particle-bonded structure formed by sintering (sintering) metal particles by heat treatment.
The particle-bonded structure in the thermally conductive material 50 can be observed by various microscopes such as a scanning electron microscope, for example, at least 1 cross section when the thermally conductive material 50 is cut in the lamination direction of the semiconductor element 20 and the heat sink 30.
In a predetermined region of the cross section of the thermal conductive material 50, there is a structure in which a plurality of metal particles are connected in a state where the interface disappears. The thermal conductivity of the thermal conductive material 50 can be improved by the connection structure of the metal particles.
Further, in at least a part of the bonding surface between the thermally conductive material 50 and the semiconductor element 20 or the bonding surface between the thermally conductive material 50 and the heat sink 30, the thermally conductive material 50 can have a bonding structure with the surface of the semiconductor element 20 or the surface of the heat sink 30 via the metal particles therein.
According to the present embodiment, by using a thermally conductive material having a particle-bonded structure formed by sintering metal particles by heat treatment as the thermally conductive material, the thermal conductivity of the thermally conductive material can be improved, and the semiconductor element and the heat dissipation member can be joined to each other, so that the heat dissipation characteristics in the semiconductor package can be improved.
The semiconductor package 100 will be described in detail below.
The semiconductor package 100 of fig. 1 includes a substrate 10, a semiconductor element 20, a heat spreader 30, and a thermally conductive material 50.
The semiconductor element 20 may be, for example, a logic chip, a memory chip, or an LSI chip in which a memory circuit and a logic circuit are mixed. The semiconductor element 20 may be constituted by a BGA type package.
The semiconductor element 20 is mounted on the substrate 10 and electrically connected to the substrate 10. The semiconductor element 20 may be connected to the substrate 10 via a flip chip. In this case, the semiconductor element 20 is soldered to the substrate 10 via the solder ball 60. The gap between the semiconductor element 20 and the substrate 10 may be filled with an underfill material 70. The underfill material 70 may be a known material, but may be a sealing material or a die bonding material.
For example, a printed circuit board or the like can be used as the substrate 10. One surface of the substrate 10 may be provided with 1 or 2 or more semiconductor elements 20. Further, electronic components and heat sources other than the semiconductor element 20 may be mounted on one surface of the substrate 10. On the other hand, the other surface (the surface on the opposite side to the one surface) of the substrate 10 may have a connection structure that can be connected to another substrate. Examples of the connection structure include a solder ball and a pin connector.
The heat sink 30 may be made of a member that radiates heat from a heat generating element such as the semiconductor element 20, and may be made of a metal material, for example. Examples of the metal material include copper, aluminum, and stainless steel. These may be used alone, or 2 or more of them may be used in combination. The heat sink 30 may have a high thermal conductivity material other than a metal material, and may contain graphite or the like inside, for example.
The heat sink 30 may be formed of a single layer using a metal layer made of the above-described metal material, or may be formed of a laminated structure in which a plurality of layers are laminated. Further, at least the surface of the heat sink 30 to which the heat conductive material 50 is bonded may be exposed from the metal material, but the plating process may be performed using another metal. For example, the plating film may be formed of nickel, gold, an alloy containing these as main components, or a laminated film of these. This can improve the rust prevention property of the radiator 30.
The shape of the heat sink 30 is not particularly limited as long as it is a lid structure covering the semiconductor element 20. The heat sink 30 is formed of a case having an opening on a surface facing the semiconductor element 20. Specifically, the heat sink 30 may have: a plate-like portion having another surface opposite to the one surface of the semiconductor element 20; and a side wall portion that protrudes from the other surface of the plate-like portion and is provided around the plate-like member so as to cover the periphery of the side surface of the semiconductor element 20.
The cross-sectional structure of the heat sink 30 may have, for example, a substantially "コ" shape when viewed in cross section in the stacking direction of the semiconductor element 20 and the heat sink 30.
A part of the heat sink 30 may be bonded to the substrate 10 via an adhesive. For example, the front end of the side wall portion of the heat sink 30 may be bonded to one surface of the substrate 10 using an adhesive. The adhesive may be a known adhesive.
The thermally conductive material 50 is provided between one surface of the semiconductor element 20 and the other surface of the heat sink 30 opposite to the one surface, and joins these.
The thermally conductive material 50 has a particle-bonded structure formed by sintering metal particles by heat treatment. The thermally conductive material 50 may be formed using a thermally conductive composition having a particle-bonded structure formed by sintering metal particles by heat treatment. The details of the thermally conductive composition will be described later.
The metal particles may include particles composed of a metal. The metal particles may include, for example, particles composed of a metal composed of one or more metals selected from the group consisting of silver, gold, and copper.
The lower limit of the thermal conductivity of the thermal conductive material 50 is, for example, 10W/mK or more, preferably 15W/mK or more, and more preferably 20W/mK or more. This can improve the heat dissipation characteristics of the semiconductor package 100. On the other hand, the upper limit of the thermal conductivity of the thermal conductive material 50 may be, for example, 200W/mK or less, or 150W/mK or less. The thermal conductivity can be obtained by measuring in the thickness direction at 25 ℃ using a laser flash method.
The average particle diameter D of the particles composed of the metal50The lower limit of (B) is, for example, 0.8 μm or more, preferably 1.0 μm or more, and more preferably 1.2 μm or more. This can improve the thermal conductivity. On the other hand, the average particle diameter D of the particles made of the metal50The upper limit of (B) is, for example, 7.0 μm or less, preferably 5.0 μm or less, and more preferably 4.0 μm or less. This can improve sinterability between the metal particles. Further, the uniformity of sintering can be improved. The average particle diameter D of the particles composed of the metal50Can be used as the average particle diameter D of the silver particles50。
The upper limit of the standard deviation of the particle diameter of the metal particles is 2.0 μm or less, preferably 1.9 μm or less, and more preferably 1.8 μm or less. This improves the uniformity during sintering. On the other hand, the lower limit of the standard deviation of the particle diameter of the metal particles is not particularly limited, and may be, for example, 0.1 μm or more and 0.3 μm or more.
The metal particles may include metal-coated resin particles made of resin particles and a metal formed on the surfaces of the resin particles. The metal particles may contain either one of metal-coated resin particles and particles made of metal, but preferably contain both.
Although the detailed mechanism is not clear, the use of the metal-coated resin particles can improve the adhesion to the surface of the other surface side of the nickel-plated heat sink 30.
The thermally conductive material 50 may be constituted only by a particle-bonded structure of metal particles, but may also have a particle-bonded structure and a resin present in the structure. This can improve the thermal conductivity and reduce the storage modulus.
The upper limit of the storage modulus at 25 ℃ of the thermally conductive material 50 is, for example, 10.0GPa or less, preferably 9GPa or less, and more preferably 8GPa or less. This can lower the elasticity of the heat conductive material 50, and therefore can suppress the occurrence of cracks due to stress strain and the reduction in adhesion. The upper limit of the storage modulus of the thermally conductive material 50 at 25 ℃ may be, for example, 1GPa or more, preferably 2GPa or more, and more preferably 3GPa or more. This enables the heat conductive material 50 having excellent durability to be realized. The storage modulus can be obtained by measurement using dynamic viscoelasticity measurement (DMA) at a frequency of 1 Hz.
The thermal conductive material 50 may be formed on at least a part of or the entire surface of one surface of the semiconductor element 20.
As shown in fig. 1, semiconductor package 100 may further include a heat sink 80 and a thermally conductive material 90.
The heat sink 80 can be bonded to the heat sink 30 via the thermally conductive material 90. The heat conductive material 90 may be a known material, and for example, grease may be used.
The heat sink 80 may be formed of a member having excellent heat dissipation properties, and for example, a material used for the heat sink 30 may be used. The heat sink 80 may have a plurality of fins.
Hereinafter, each component of the thermally conductive composition of the present embodiment will be described in detail.
The above thermally conductive composition is used to form the thermally conductive material 50 in a semiconductor package including a substrate, a semiconductor element 20 provided on the substrate 10, and a heat sink 30 surrounding the periphery of the semiconductor element 20, and the semiconductor element 20 and the heat sink 30 are bonded by the thermally conductive material 50.
The heat conductive composition can form the heat conductive material 50 by sintering the metal particles by heat treatment to form a particle connection structure.
The thermally conductive composition of the present embodiment contains the metal particles, the binder resin, and the monomer.
Although the detailed mechanism is not yet determined, it is believed that: when the monomer is volatilized by heating and the volume of the composition is shrunk, stress is applied in a direction in which the metal particles approach each other, and the interface between the metal particles disappears, thereby forming a connected structure of the metal particles. And, it is considered that: when such metal particles are sintered, a binder resin, or a cured resin product of the binder resin with a curing agent, a monomer, or the like remains inside or on the outer periphery of the connection structure. Also, it is also believed that: the solidification reaction generates a force that causes the aggregation of a plurality of metal particles.
By heat-treating the thermally conductive composition, an adhesive layer (thermally conductive material 50) containing "a particle-linked structure of metal particles" and "a resin component composed of a binder resin, a cured product thereof, resin particles in metal-coated resin particles, and the like" can be realized.
The lower limit of the thermal conductivity λ measured in the following step A is, for example, 10W/mK or more, preferably 15W/mK or more, and more preferably 20W/mK or more, using the thermally conductive composition. This can improve the heat dissipation characteristics of the semiconductor package 100. On the other hand, the upper limit of the thermal conductivity λ may be, for example, 200W/mK or less, or 150W/mK or less.
(step A)
The heat conductive composition took 60 minutes to heat up from 30 ℃ to 200 ℃, and then, heat-treated at 200 ℃ for 120 minutes to obtain a heat-treated body having a thickness of 1mm, and the heat conductivity λ (W/mK) at 25 ℃ was measured for the obtained heat-treated body using a laser flash method.
The upper limit of the storage modulus E at 25 ℃ measured in the following step B using this thermally conductive composition is, for example, 10GPa or less, preferably 9GPa or less, and more preferably 8GPa or less. This can lower the elasticity of the heat conductive material 50, and therefore can suppress the occurrence of cracks due to stress strain and the reduction in adhesion. The upper limit of the storage modulus E at 25 ℃ may be, for example, 1GPa or more, preferably 2GPa or more, and more preferably 3GPa or more. This enables the heat conductive material 50 having excellent durability to be realized. The storage modulus can be obtained by measurement using dynamic viscoelasticity measurement (DMA) at a frequency of 1 Hz.
(Metal particle)
The thermally conductive composition of the present embodiment contains metal particles. The metal particles can be sintered by heat treatment to form a particle-bonded structure (sintered structure).
As the metal particles, metal-coated resin particles, particles made of metal, and the like can be used. The metal particles may include either one of metal-coated resin particles and particles made of metal, but more preferably include both.
By using the metal-coated resin particles, the storage modulus can be appropriately reduced while suppressing a decrease in sinterability of the metal particles. By using the particles made of metal, the sintering property of the metal particles can be improved and the thermal conductivity can be appropriately improved.
The metal-coated resin particle is composed of a resin particle and a metal formed on the surface of the resin particle. That is, the metal-coated resin particles may be particles in which the surface of the resin particles is coated with a metal layer.
In the present specification, the surface of the resin particle coated with the metal layer is a state in which the metal layer covers at least a part of the surface of the resin particle, and is not limited to a mode of covering the entire surface of the resin particle, and may include, for example, a mode in which the metal layer partially covers the surface of the resin particle, and a mode in which the metal layer covers the entire surface when viewed from a specific cross section.
Among them, from the viewpoint of thermal conductivity, the metal layer preferably covers the entire surface when viewed from a specific cross section, and more preferably the metal layer covers the entire surface of the particle.
The metal in the metal-coated resin particles may contain, for example, one or more selected from silver, gold, nickel, and tin. These metals may be used alone, or 2 or more kinds may be used in combination. Alternatively, an alloy containing these metals as a main component may be used. Among them, silver can be used from the viewpoint of sinterability and thermal conductivity.
Examples of the resin material constituting the resin particles (core resin particles) in the metal-coated resin particles include silicone, acrylic, phenol, polystyrene, melamine, polyamide, polytetrafluoroethylene, and the like. These may be used alone, or 2 or more of them may be used in combination. The resin particles may be constituted by a polymer using these. The polymer may be a homopolymer or a copolymer mainly composed of these.
From the viewpoint of elastic properties and heat resistance, silicone resin particles and acrylic resin particles can be used as the resin particles.
The silicone resin particles may be particles composed of an organopolysiloxane obtained by polymerizing an organochlorosilane such as methylchlorosilane, trimethyltrichlorosilane, dimethyldichlorosilane, or the like, or may be silicone resin particles having a structure obtained by further three-dimensionally crosslinking the organopolysiloxane as a basic skeleton.
Various functional groups can be introduced into the structure of the silicone resin particles, and examples of the functional groups that can be introduced include, but are not limited to, epoxy groups, amino groups, methoxy groups, phenyl groups, carboxyl groups, hydroxyl groups, alkyl groups, vinyl groups, mercapto groups, and the like.
In the present embodiment, another low-stress modifier may be added to the silicone resin particles within a range in which the properties are not impaired. Examples of the other low-stress modifier that can be used together include, but are not limited to, liquid synthetic rubbers such as butadiene styrene rubber, butadiene acrylonitrile rubber, polyurethane (polyurethane) rubber, polyisoprene rubber, acrylic rubber, fluororubber, liquid organopolysiloxane, liquid polybutadiene, and the like.
The shape of the resin particles is not particularly limited, and may be spherical, but may be a different shape other than spherical, for example, a flat shape (flake shape), a plate shape, or a needle shape. When the metal-coated resin particles are formed in a spherical shape, the resin particles to be used are also preferably formed in a spherical shape. The spherical shape includes not only a perfect sphere but also a shape close to a sphere such as an ellipse, a shape having a plurality of irregularities on the surface, and the like as described above.
The lower limit of the specific gravity of the metal-coated resin particles is, for example, 2 or more, preferably 2.5 or more, and more preferably 3 or more. This can further improve the thermal conductivity and the electrical conductivity as the adhesive layer. The upper limit of the specific gravity of the metal-coated resin particles is, for example, 10 or less, preferably 9 or less, and more preferably 8 or less. This can improve the dispersibility of the particles. The specific gravity may be a specific gravity of metal particles including metal-coated resin particles and particles made of metal.
The metal-coated resin particles may be monodisperse particles or polydisperse particles. In the particle size frequency distribution, the metal-coated resin particles may have 1 peak, or may have a plurality of peaks of 2 or more.
The particles made of metal may be particles made of 1 or 2 or more kinds of metal materials, and the core portion and the surface layer portion may be made of the same or different kinds of metal materials. The metal material may contain, for example, one or more selected from silver, gold, and copper. These metals may be used alone, or 2 or more kinds may be used in combination. Alternatively, an alloy containing these metals as a main component may be used. Among them, silver can be used from the viewpoint of sinterability and thermal conductivity.
The shape of the metal particles may be, for example, spherical or flake (flake). The particles composed of a metal may include either or both of spherical particles and plate-like particles.
In one embodiment of the metal particles, the metal-coated resin particles include silver-coated silicone resin particles, and the particles made of metal include silver particles.
In addition to the silver-coated silicone resin particles, silver-coated acrylic resin particles may also be used from the viewpoint of elastic characteristics. In addition to the silver particles, particles containing a metal component other than silver, such as gold particles and copper particles, may be used together for the purpose of, for example, promoting sintering or reducing the cost.
The average particle diameter D of the metal-coated resin particles50The lower limit of (B) is, for example, 0.5 μm or more, preferably 1.5 μm or more, and more preferably 2.0 μm or more. This can reduce the storage modulus. On the other hand, the average particle diameter D of the metal-coated resin particles50The upper limit of (2) may be, for example, 20 μm or less, 15 μm or less, or 10 μm or less. This can improve the thermal conductivity. The average particle diameter D of the metal-coated resin particles50The average particle diameter D of the silver-coated silicone resin particles and silver-coated acrylic resin particles50。
The average particle diameter D of the particles composed of the metal50The lower limit of (B) is, for example, 0.8 μm or more, preferably 1.0 μm or more, and more preferably 1.2 μm or more. This can improve the thermal conductivity. On the other hand, the average particle diameter D of the particles made of the metal50The upper limit of (B) is, for example, 7.0 μm or less, preferably 5.0 μm or less, and more preferably 4.0 μm or less. This can improve sinterability between the metal particles. Furthermore, the uniformity of sintering can be improved. The average particle diameter D of the particles composed of the metal50Can be used as the average particle diameter D of the silver particles50。
Also, the particles composed of the metal may include 2 or more kinds of particles having different particle diameters D50. This can improve sinterability.
Further, the average particle diameter D of the metal particles50For example, it can be determined by performing particle image measurement using a flow type particle image analyzing apparatus FPIA (registered trademark) -3000 manufactured by cismexican Corporation (Sysmex Corporation). More specifically, it can be determined by measuring the volume-based median particle diameter using the above-described apparatusThe particle size of the metal particles.
The content of the metal-coated resin particles is, for example, 1 to 50 mass%, preferably 3 to 45 mass%, and more preferably 5 to 40 mass% with respect to the entire metal particles (100 mass%). When the content of the metal-coated resin particles is not less than the lower limit value, the storage modulus can be reduced. When the content of the metal-coated resin particles is not more than the upper limit, the thermal conductivity can be improved.
In the present specification, "to" includes an upper limit value and a lower limit value unless otherwise specified.
The content of the metal particles is 1 to 98 mass%, preferably 30 to 95 mass%, and more preferably 50 to 90 mass% with respect to the entire thermally conductive composition (100 mass%). When the content of the metal particles is not less than the lower limit value, the thermal conductivity can be improved. By setting the content of the metal particles to the upper limit or less, the coating property and the workability at the time of pasting can be improved.
(Binder resin)
The thermally conductive composition contains a binder resin.
The binder resin may include 1 or more selected from the group consisting of epoxy resin, acrylic resin, and allyl resin. These may be used alone, or 2 or more of them may be used in combination.
Specific examples of the binder resin include: acrylic resins such as acrylic oligomers and acrylic polymers; epoxy resins such as epoxy oligomers and epoxy polymers; allyl resins such as allyl oligomers and allyl polymers. These may be used alone, or 2 or more of them may be used in combination.
An oligomer having a weight average molecular weight of less than 1 ten thousand is referred to as an oligomer, and a polymer having a weight average molecular weight of 1 ten thousand or more is referred to as a polymer.
As the epoxy resin, an epoxy resin having 2 or more epoxy groups in a molecule can be used. The epoxy resin may be liquid at 25 ℃. This can improve the handleability of the thermally conductive composition. Further, the curing shrinkage can be appropriately adjusted.
Specific examples of the epoxy resin include, for example, triphenolmethane type epoxy resins; hydrogenated bisphenol a type liquid epoxy resin; bisphenol F type liquid epoxy resins such as bisphenol-F-diglycidyl ether; o-cresol novolac type epoxy resins, and the like. These may be used alone, or 2 or more of them may be used in combination.
Among them, hydrogenated bisphenol a type liquid epoxy resin or bisphenol F type liquid epoxy resin can be used. As the bisphenol F type liquid epoxy resin, for example, bisphenol-F-diglycidyl ether can be used.
As the acrylic resin, an acrylic resin having 2 or more acrylic groups in the molecule can be used. The acrylic resin may be liquid at 25 ℃.
As the acrylic resin, specifically, an acrylic resin obtained by (co) polymerizing an acrylic monomer can be used. The method of (co) polymerization is not limited, and a known method using a general polymerization initiator and a chain transfer agent, such as solution polymerization, can be used.
As the allyl resin, an allyl resin having 2 or more allyl groups in 1 molecule can be used. The allyl resin may be liquid at 25 ℃.
Specific examples of the allyl resin include allyl esters obtained by reacting dicarboxylic acids, allyl alcohol, and compounds having allyl groups.
Specific examples of the dicarboxylic acid include oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, fumaric acid, phthalic acid, tetrahydrophthalic acid, and hexahydrophthalic acid. Specific examples of the compound having an allyl group include polyethers, polyesters, polycarbonates, polyacrylates, polymethacrylates, polybutadienes, butadiene acrylonitrile copolymers having an allyl group.
The lower limit of the content of the binder resin is, for example, 1 part by mass or more, preferably 2 parts by mass or more, and more preferably 3 parts by mass or more, per 100 parts by mass of the thermally conductive composition. This improves the adhesion to the adherend. On the other hand, the upper limit of the content of the binder resin is, for example, 15 parts by mass or less, preferably 12 parts by mass or less, and more preferably 10 parts by mass or less, relative to 100 parts by mass of the thermally conductive composition. This can suppress a decrease in thermal conductivity.
(monomer)
The thermally conductive composition contains a monomer.
The monomer may include one or more selected from the group consisting of a diol monomer, an acrylic monomer, an epoxy monomer, and a maleimide monomer. These may be used alone, or 2 or more of them may be used in combination.
By using the monomer, the volatilization state of the thermally conductive composition during heat treatment can be adjusted. By appropriately selecting the combination with the binder resin and the curing agent, the monomer can be caused to undergo a curing reaction with them, and the curing shrinkage state can be adjusted.
Specific examples of the diol monomer include: a glycol having 2 hydroxyl groups in a molecule, and the 2 hydroxyl groups are bonded to respectively different carbon atoms; a compound obtained by alcohol condensation of 2 or more of the above diols; and compounds obtained by substituting a hydrogen atom in a hydroxyl group of the compound obtained by alcohol condensation with an organic group having 1 to 30 carbon atoms to form an alkoxy group.
Specific examples of the above-mentioned glycol monomer include ethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol mono-n-propyl ether, ethylene glycol mono-isopropyl ether, ethylene glycol mono-n-butyl ether, ethylene glycol mono-isobutyl ether, ethylene glycol mono-hexyl ether, ethylene glycol mono-2-ethylhexyl ether, ethylene glycol mono-allyl ether, ethylene glycol mono-phenyl ether, ethylene glycol mono-benzyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol mono-n-propyl ether, diethylene glycol mono-isopropyl ether, diethylene glycol mono-n-butyl ether, diethylene glycol mono-isobutyl ether, diethylene glycol mono-hexyl ether, diethylene glycol mono-2-ethylhexyl ether, diethylene glycol mono-benzyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol mono-n-butyl ether, tetraethylene glycol monomethyl ether, tetraethylene glycol monoethyl glycol, tetraethylene glycol mono-n-butyl ether, tetraethylene glycol mono-butyl ether, tetra-butyl ether, Propylene glycol, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol mono-n-propyl ether, propylene glycol monoisopropyl ether, propylene glycol mono-n-butyl ether, propylene glycol monophenyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol mono-n-propyl ether, dipropylene glycol mono-n-butyl ether, tripropylene glycol monomethyl ether, tripropylene glycol monoethyl ether, tripropylene glycol mono-n-butyl ether, and the like. These may be used alone, or 2 or more of them may be used in combination. Among them, tripropylene glycol mono-n-butyl ether or ethylene glycol mono-n-butyl acetate can be used from the viewpoint of volatility.
The lower limit of the boiling point of the diol monomer is, for example, preferably 100 ℃ or higher, more preferably 130 ℃ or higher, still more preferably 150 ℃ or higher, yet still more preferably 170 ℃ or higher, and particularly preferably 190 ℃ or higher. The upper limit of the boiling point of the diol monomer may be, for example, 400 ℃ or lower, or 350 ℃ or lower.
The boiling point of the diol monomer is the boiling point under atmospheric pressure (101.3 kPa).
Examples of the acrylic monomer include monomers having a (meth) acrylic group in the molecule.
Here, the (meth) acrylic group means an acrylic group and a methacrylic group.
The acrylic monomer may be a monofunctional acrylic monomer having only 1 (meth) acrylic group in the molecule, or may be a polyfunctional acrylic monomer having 2 or more (meth) acrylic groups in the molecule.
Specific examples of the monofunctional acrylic monomer include 2-phenoxyethyl (meth) acrylate, ethyl (meth) acrylate, n-butyl (meth) acrylate, isobutyl (meth) acrylate, t-butyl (meth) acrylate, isoamyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, isodecyl (meth) acrylate, n-lauryl (meth) acrylate, n-tridecyl (meth) acrylate, n-stearyl (meth) acrylate, isostearyl (meth) acrylate, ethoxydiglycol (meth) acrylate, butoxydiglycol (meth) acrylate, methoxytriethylene glycol (meth) acrylate, 2-ethylhexyl diglycol (meth) acrylate, methoxypolyethylene glycol (meth) acrylate, methoxypropyldiglycol (meth) acrylate, and mixtures thereof, Cyclohexyl (meth) acrylate, tetrahydrofurfuryl (meth) acrylate, benzyl (meth) acrylate, phenoxyethyl (meth) acrylate, phenoxydiethylene glycol (meth) acrylate, phenoxypolyethylene glycol (meth) acrylate, nonylphenol ethylene oxide-modified (meth) acrylate, phenylphenol ethylene oxide-modified (meth) acrylate, isobornyl (meth) acrylate, dimethylaminoethyl (meth) acrylate, diethylaminoethyl (meth) acrylate, dimethylaminoethyl (meth) acrylate quaternary compound, glycidyl (meth) acrylate, neopentyl glycol (meth) acrylate, 1, 4-cyclohexanedimethanol mono (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, methyl methacrylate, and mixtures thereof, 2-hydroxy-3-phenoxypropyl (meth) acrylate, 2- (meth) acryloyloxyethyl succinic acid, 2- (meth) acryloyloxyethyl hexahydrophthalic acid, 2- (meth) acryloyloxyethyl phthalic acid, 2- (meth) acryloyloxyethyl-2-hydroxyethyl phthalic acid, 2- (meth) acryloyloxyethyl acid phosphate, and the like.
Specific examples of the polyfunctional acrylic monomer include ethylene glycol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, propoxylated bisphenol a di (meth) acrylate, hexane-1, 6-diol bis (2- (meth) acrylate methyl ester), 4, 4' -isopropylidenediphenol di (meth) acrylate, 1, 3-butanediol di (meth) acrylate, 1, 6-bis ((meth) acryloyloxy) -2,2,3,3,4,4,5, 5-octafluorohexane, 1, 4-bis ((meth) acryloyloxy) butane, 1, 6-bis ((meth) acryloyloxy) hexane, triethylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, and the like, N, N '-di (meth) acryloyl ethylenediamine, N' - (1, 2-dihydroxyethylene) bis (meth) acrylamide, 1, 4-bis ((meth) acryloyl) piperazine, or the like.
As the acrylic monomer, a monofunctional acrylic monomer or a polyfunctional acrylic monomer may be used alone, or a monofunctional acrylic monomer and a polyfunctional acrylic monomer may be used together. As the acrylic monomer, for example, a polyfunctional acrylic monomer is preferably used alone.
The epoxy monomer is a monomer having an epoxy group in a molecule.
The epoxy monomer may be a monofunctional epoxy monomer having only 1 epoxy group in the molecule, or may be a polyfunctional epoxy monomer having 2 or more epoxy groups in the molecule.
Specific examples of the monofunctional epoxy monomer include 4-tert-butylphenyl glycidyl ether, m-cresyl glycidyl ether, p-cresyl glycidyl ether, phenyl glycidyl ether, and cresyl glycidyl ether.
Specific examples of the polyfunctional epoxy monomer include: bisphenol compounds such as bisphenol a, bisphenol F, and biphenol, or derivatives thereof; diols having an alicyclic structure such as hydrogenated bisphenol a, hydrogenated bisphenol F, hydrogenated biphenol, cyclohexanediol, cyclohexanedimethanol, and cyclohexanediol, or derivatives thereof; 2-functional monomers obtained by epoxidizing aliphatic diols such as butanediol, hexanediol, octanediol, nonanediol, and decanediol, or derivatives thereof; a 3-functional monomer having a trihydroxyphenylmethane skeleton, an aminophenol skeleton; and polyfunctional monomers obtained by epoxidizing a novolac resin, a cresol novolac resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a naphthol aralkyl resin, or the like.
The maleimide monomer is a monomer having a maleimide ring in the molecule.
The maleimide monomer may be a monofunctional maleimide monomer having only 1 maleimide ring in the molecule, or a polyfunctional maleimide monomer having 2 or more maleimide rings in the molecule.
Specific examples of the maleimide monomer include polytetramethylene ether glycol-bis (2-maleimide acetate).
The lower limit of the content of the monomer is, for example, 0.5 parts by mass or more, preferably 1.0 parts by mass or more, and more preferably 2.0 parts by mass or more, relative to 100 parts by mass of the thermally conductive composition. On the other hand, the upper limit of the content of the monomer is, for example, 10 parts by mass or less, preferably 7 parts by mass or less, and more preferably 5 parts by mass or less, relative to 100 parts by mass of the thermally conductive composition.
(curing agent)
The thermally conductive composition may contain a curing agent, if necessary.
The curing agent has a reactive group that reacts with a functional group in the monomer or the binder resin. Examples of the reactive group include groups that react with functional groups such as epoxy groups, maleimide groups, and hydroxyl groups.
Specifically, in the case where the monomer contains an epoxy monomer or/and the binder resin contains an epoxy resin, a phenolic resin-based curing agent or an imidazole-based curing agent may be used as the curing agent.
Specific examples of the phenolic resin curing agent include novolak-type phenolic resins such as novolak resin, cresol novolak resin, bisphenol novolak resin, and phenol-diphenol novolak resin; polyvinyl phenol; multifunctional phenol resins such as triphenylmethane phenol resins; modified phenolic resins such as terpene-modified phenolic resin and dicyclopentadiene-modified phenolic resin; phenol aralkyl type phenol resins such as phenol aralkyl resins having a phenylene skeleton and/or a biphenylene skeleton and naphthol aralkyl resins having a phenylene skeleton and/or a biphenylene skeleton; bisphenol compounds (phenol resins having a bisphenol F skeleton) such as bisphenol a and bisphenol F (dihydroxydiphenylmethane); and compounds having a biphenylene skeleton such as 4, 4' -biphenol. These may be used alone, or 2 or more of them may be used in combination.
Among them, phenol aralkyl resins can be used, and phenol/p-xylene dimethyl ether polycondensates can be used as the phenol aralkyl resins.
Specific examples of the imidazole-based curing agent include 2-phenyl-1H-imidazole-4, 5-dimethanol, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-methylimidazole, 2-phenylimidazole, 2, 4-diamino-6- [ 2-methylimidazolyl- (1) ] -ethyl-s-triazine, 2-undecylimidazole, 2-heptadecylimidazole, 2, 4-diamino-6- [ 2-methylimidazolyl- (1) ] -ethyl-s-triazine isocyanurate adduct, 2-phenylimidazole isocyanurate adduct, 2-methylimidazolium isocyanurate adduct, 1-cyanoethyl-2-phenylimidazolium trimellitate, trimellitic acid, and the like, 1-cyanoethyl-2-undecylimidazolium trimellitate, and the like. These may be used alone, or 2 or more of them may be used in combination.
The content of the curing agent may be, for example, 5 to 50 parts by mass, or 20 to 40 parts by mass, based on 100 parts by mass of the binder resin in the thermally conductive composition.
The content of the curing agent may be, for example, 1 to 40 parts by mass, or 10 to 35 parts by mass, based on 100 parts by mass of the epoxy resin or 100 parts by mass of the total of the epoxy resin and the epoxy monomer in the thermally conductive composition.
(radical polymerization initiator)
The thermally conductive composition may contain a radical polymerization initiator.
As the radical polymerization initiator, azo compounds, peroxides, and the like can be used.
Specific examples of the above-mentioned peroxide include bis (1-phenyl-1-methylethyl) peroxide, 1-bis (1, 1-dimethylethylperoxy) cyclohexane, methylethyl ketone peroxide, cyclohexane peroxide, acetylacetone peroxide, 1-di (t-hexylperoxy) cyclohexane, 1-di (t-butylperoxy) -2-methylcyclohexane, 1-di (t-butylperoxy) cyclohexane, 2-di (t-butylperoxy) butane, n-butyl-4, 4-di (t-butylperoxy) valerate, 2-di (4, 4-di (t-butylperoxy) cyclohexane) propane, p-methane hydroperoxide, diisopropylbenzene hydroperoxide, 1,3, 3-tetramethylbutyl hydroperoxide, p-xylene, n-butyl hydroperoxide, n-butyl-ethyl-1, 1-dimethylethyl-2-methyl-2-ethyl-2-methyl-2-di (t-butylperoxy) cyclohexane) propane, p-butyl-propyl-ethyl-2, n-butyl-propyl-butyl-hydroperoxide, n-butyl-propyl-hydroxy-butyl-propyl-butyl-propyl-2, butyl-propyl-butyl-propyl-2, butyl-propyl-butyl-propyl-butyl-hydroxy-propyl-butyl hydroperoxide, and so as a so-butyl hydroperoxide, Cumene hydroperoxide, tert-butyl hydroperoxide, di (2-tert-butylperoxyisopropyl) benzene, diisopropylphenyl peroxide, 2, 5-dimethyl-2, 5-di (tert-butylperoxy) hexane, tert-butylcumyl peroxide, di-tert-butyl peroxide, 2, 5-dimethyl-2, 5-di (tert-butylperoxy) hexane, diisobutyl peroxide, di (3,5, 5-trimethylhexanoyl) peroxide, dilauryl peroxide, di (3-methylbenzoyl) peroxide, benzoyl (3-methylbenzoyl) peroxide, dibenzoyl peroxide, di (4-methylbenzoyl) peroxide, di-n-propyl peroxydicarbonate, diisopropylperoxydicarbonate, di (2-ethylhexyl) peroxydicarbonate, di (tert-butylperoxy) hexane, di-tert-butyl-isopropyl) benzene, di (2, 5-dimethyl-2, 5-di (tert-butylperoxy) hexane, di-isobutyl peroxide, di (3, 5-trimethylhexanoyl) peroxide, dilauryl peroxide, di (3-methylbenzoyl) peroxide, benzoyl) peroxide, dibenzoyl peroxide, di (4-methylbenzoyl) peroxide, di (n-propyl peroxydicarbonate, di (n-propyl) peroxydicarbonate, di (isopropyl) peroxydicarbonate, di (isopropyl) carbonate, di (isopropyl peroxydicarbonate, di (2-n-butyl-propyl) carbonate, di (isopropyl peroxydicarbonate), di (2-butyl-propyl) carbonate, di (isopropyl peroxydicarbonate, di (2-butyl-n, di (butyl-propyl) carbonate, di (butyl-2, di-butyl-2, di-butyl-2, di-butyl-2, di (butyl-2, di-butyl-2, di-butyl-2, di-butyl-2, di (butyl-2, di-butyl-, Di-sec-butylperoxydicarbonate, cumylperoxyneodecanoate, 1,3, 3-tetramethylbutylperoxyneodecanoate, tert-hexylneodecanoate, tert-butylperoxyneoheptanoate, tert-hexylperoxypivalate, 1,3, 3-tetramethylbutylperoxy-2-ethylhexanoate, 2, 5-dimethyl-2, 5-di (2-diethylhexanoylperoxy) hexane, tert-butylperoxy-2-ethylhexanoate, tert-hexylperoxyisopropyl monocarbonate, tert-butylperoxymaleic acid, tert-butylperoxy 3,5, 5-trimethylhexanoate, tert-butylperoxyisopropyl monocarbonate, tert-butylperoxy-2-ethylhexyl monocarbonate, tert-hexylperoxybenzoate, 2, 5-dimethyl-2, 5-di (benzoylperoxy) hexane, t-butylperoxypyruvate, t-peroxy-3-methylbenzoate, t-butylperoxybenzoate, t-butylperoxyallyl monocarbonate, 3 ', 4, 4' -tetrakis (t-butylperoxyhydroxy) benzophenone, and the like. These may be used alone, or 2 or more of them may be used in combination.
(curing accelerators)
The thermally conductive composition may contain a curing accelerator.
The curing accelerator can accelerate the reaction of the binder resin or monomer with the curing agent.
Specific examples of the curing accelerator include: phosphorus atom-containing compounds such as organic phosphines, tetra-substituted phosphonium compounds, phosphobetaine (phosphobetaine) compounds, adducts of phosphine compounds and quinone compounds, and adducts of phosphonium compounds and silane compounds; amidine or tertiary amine such as dicyanodiamine, 1, 8-diazabicyclo [5.4.0] undecene-7, benzyldimethylamine, etc.; and nitrogen atom-containing compounds such as the amidines and quaternary ammonium salts of the tertiary amines. These may be used alone, or 2 or more of them may be used in combination.
(silane coupling agent)
The thermally conductive composition may contain a silane coupling agent.
The silane coupling agent can improve the adhesion between the adhesion layer using the heat conductive composition and the base material or the semiconductor element.
As the silane coupling agent, specifically, there can be used: vinylsilanes such as vinyltrimethoxysilane and vinyltriethoxysilane; epoxy silanes such as 2- (3, 4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane and 3-glycidoxypropyltriethoxysilane; styryl silanes such as p-styryl trimethoxysilane; methacryloylsilanes such as 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane and 3-methacryloxypropyltriethoxysilane; acrylic silanes such as 3- (trimethoxysilyl) propyl methacrylate and 3-acryloxypropyltrimethoxysilane; aminosilanes such as N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N- (1, 3-dimethyl-butylene) propylamine, and N-phenyl-gamma-aminopropyltrimethoxysilane; a isocyanurate silane; an alkylsilane; ureido silanes such as 3-ureidopropyltrialkoxysilane; mercaptosilanes such as 3-mercaptopropylmethyldimethoxysilane and 3-mercaptopropyltrimethoxysilane; isocyanate silane such as 3-isocyanatopropyltriethoxysilane, and the like. These may be used alone, or 2 or more of them may be used in combination.
(plasticizer)
The thermally conductive composition may contain a plasticizer. By adding the plasticizer, stress can be reduced.
Specific examples of the plasticizer include silicon compounds such as silicone oil and silicone rubber; polybutadiene compounds such as polybutadiene maleic anhydride adducts; acrylonitrile butadiene copolymer compounds, and the like. These may be used alone, or 2 or more of them may be used in combination.
(other Components)
The thermally conductive composition may contain other components in addition to the above components, as required. Examples of the other component include a solvent.
The solvent is not particularly limited, and may include, for example, alcohols selected from ethanol, propanol, butanol, pentanol, hexanol, heptanol, octanol, nonanol, decanol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, methyl methoxybutanol, α -terpineol, β -terpineol, hexylene glycol, benzyl alcohol, 2-phenylethyl alcohol, isopalmitol, isostearyl alcohol, lauryl alcohol, ethylene glycol, propylene glycol, butyl glycerol, and the like; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, diacetone alcohol (4-hydroxy-4-methyl-2-pentanone), 2-octanone, isophorone (3,5, 5-trimethyl-2-cyclohexene-1-one), and diisobutyl ketone (2, 6-dimethyl-4-heptanone); esters such as ethyl acetate, butyl acetate, diethyl phthalate, dibutyl phthalate, acetoxyethane, methyl butyrate, methyl hexanoate, methyl octanoate, methyl decanoate, methyl cellosolve acetate, ethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, 1, 2-diacetoxyethane, tributyl phosphate, tricresyl phosphate, or tripentyl phosphate; ethers such as tetrahydrofuran, dipropyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol dibutyl ether, propylene glycol dimethyl ether, ethoxyethyl ether, 1, 2-bis (2-diethoxy) ethane or 1, 2-bis (2-methoxyethoxy) ethane; ester ethers such as 2- (2 butoxyethoxy) ethane acetate; ether alcohols such as 2- (2-methoxyethoxy) ethanol, and hydrocarbons such as toluene, xylene, n-paraffin, isoalkane, dodecylbenzene, turpentine, kerosene, and light oil; nitriles such as acetonitrile and propionitrile; amides such as acetamide and N, N-dimethylformamide; 1 or more than 2 of low molecular weight volatile silicone oil or volatile organic modified silicone oil.
By using the solvent, the fluidity of the thermally conductive composition can be controlled. For example, the workability of the paste-like thermally conductive composition can be improved. Further, the sintering can be promoted by shrinkage during heating. Among the solvents, the use of a solvent having a relatively high boiling point, preferably a solvent having a boiling point higher than the curing temperature, can suppress the generation of voids in the adhesive layer obtained by heat-treating the thermally conductive composition. The boiling point of the high boiling point solvent may be, for example, 180 to 450 ℃ or 200 to 400 ℃.
The method for producing the thermally conductive composition of the present embodiment is explained below.
As a method for producing the thermally conductive composition, a method of mixing the above-described raw material components can be used. The mixing may be performed by a known method, for example, 3 rolls, a mixer, or the like may be used.
In addition, for the obtained mixture, defoaming may be further performed. For example, the mixture may be left to stand under vacuum to defoam.
Next, a method for manufacturing the semiconductor package 100 of the present embodiment will be described.
An example of the semiconductor package 100 of the present embodiment can be manufactured using the above-described thermally conductive composition.
The manufacturing method of the semiconductor package 100 may include: a step of providing the semiconductor element 20 on one surface of the substrate 10 such that the other surface of the semiconductor element 20 faces one surface of the substrate 10; a step of applying the thermally conductive composition containing metal particles to a surface of one surface side (a side opposite to the other surface) of the semiconductor element 20; a step of disposing a heat spreader 30 so as to cover at least one surface of the semiconductor element 20 while being in contact with the thermally conductive composition; and a step of heat-treating the structure including the substrate 10, the semiconductor element 20, the thermally conductive composition, and the heat spreader 30.
The semiconductor package 100 may include the steps of: in the step of performing the heat treatment, the semiconductor element 10 and the heat spreader 30 are bonded via the thermally conductive material 50 containing the metal particles and having the particle-bonded structure formed by sintering.
The method for manufacturing the semiconductor package 100 may further include a step of drying the thermally conductive composition after the coating step and before the disposing step. This can improve leveling.
Also, in the applying step, the thermally conductive composition may be applied using a dispenser (dispenser). This can improve the operability.
Although the embodiments of the present invention have been described above, these are examples of the present invention, and various configurations other than the above-described configurations may be adopted. The present invention is not limited to the above-described embodiments, and modifications, improvements, and the like within a range in which the object of the present invention can be achieved are included in the present invention.
[ examples ]
The present invention will be described in detail with reference to examples below, but the present invention is not limited to these examples.
< thermally conductive composition >
The raw material components were mixed in the blending amounts shown in table 1 below to obtain varnishes.
The obtained varnish, solvent and metal particles were mixed in the mixing amounts shown in table 1 below, and kneaded at room temperature using a three-roll mill to prepare a paste-like thermally conductive composition.
The following shows the information of the raw material components in table 1.
(Binder resin)
Epoxy resin 1: bisphenol F type liquid epoxy resin (RE-303S, manufactured by Nippon Kayaku Co., Ltd.)
(curing agent)
Curing agent 1: phenol resin having bisphenol F skeleton (solid at room temperature of 25 ℃ C., DIC-BPF, manufactured by DIC Corporation)
Curing agent 2: m-and p-cresol glycidyl ethers (mp-CGE, manufactured by Sakamoto Yakuhin Kogyo Co., Ltd.) of Kagaku K.K.)
(acrylic acid monomer)
Acrylic monomer 1: (meth) acrylic acid monomer (ethylene glycol dimethacrylate, manufactured by Kyoeisha CHEMICAL Co., Ltd. (KYOEISHA CHEMICAL Co., LTD.), Light Ester EG)
Acrylic monomer 2: polyolefin diol dimethacrylate (PDE-600, manufactured by NOF CORPORATION)
(plasticizer)
Plasticizer 1: allyl resin (a polymer of 1, 2-cyclohexanedicarboxylic acid bis (2-propenyl) and propane-1, 2-diol, manufactured by KANTO KAGAKU Co., Ltd.)
(silane coupling agent)
Silane coupling agent 1: 3- (trimethoxysilyl) propyl methacrylate (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-503P, Shin-Etsu Chemical Co., Ltd.)
Silane coupling agent 2: 3-glycidyloxypropyltrimethoxysilane (KBM-403E, manufactured by shin-Etsu chemical Co., Ltd.)
(curing accelerators)
Imidazole curing agent 1: 2-phenyl-1H-imidazole-4, 5-dimethanol (manufactured by Shikoku Chemicals CORPORATION, 2PHZ-PW)
(polymerization initiator)
Radical polymerization initiator 1: diisopropylphenyl peroxide (Perkadox BC, manufactured by Kayaku Akzo Corporation)
(solvent)
Solvent 1: butyl glycerol (BFTG)
(Metal particle)
Silver particles 1: silver powder (DOWA HIGHTECH CO., LTD., AG-DSB-114, spherical, D50：1μm)
Silver particles 2: silver powder (Fukuda Metal Foil powder Industrial Foil Co., Ltd.)&Powder co., Ltd.), HKD-16, tablet, D50：2μm)
Silver-coated resin particles 1: silver-plated acrylic treeLipid particles (manufactured by shanno corporation, Ltd., SANSILVER-8D, spherical, D)50: 8 μm, monodisperse particles, specific gravity: 2.4, the weight ratio of silver is 50 wt%, and the weight ratio of resin is 50 wt%)
Silver particles 3: silver powder (TC-88, manufactured by Delei corporation, TOKURIKI HONTEN CO., LTD.), in the form of a flake, D50：3μm)
[ Table 1]
Figure BDA0003272522170000221
Using the obtained thermally conductive composition, the following physical properties were measured, and evaluation items were evaluated.
(thermal conductivity)
It took 60 minutes to raise the temperature of the obtained thermally conductive composition from 30 ℃ to 200 ℃, followed by heat treatment at 200 ℃ for 120 minutes, to obtain a heat-treated body having a thickness of 1 mm. Next, the thermal diffusivity α in the thickness direction of the heat-treated body was measured by a laser flash method. The measurement temperature was 25 ℃.
The specific heat Cp was measured by Differential Scanning Calorimetry (DSC), and the density ρ was measured according to JIS-K-6911. Using these values, the thermal conductivity λ was calculated based on the following equation.
The evaluation results are shown in table 1 below. The unit is W/(m.K).
Thermal conductivity lambda [ W/(m.K)]＝α[m2/sec]×Cp[J/kg·K]×ρ[g/cm3]
Both of example 1 and reference example 1 had a thermal conductivity of 20W/(m.K) or more, and could be used practically without any problem.
(storage modulus)
It took 60 minutes to raise the temperature of the obtained thermally conductive composition from 30 ℃ to 200 ℃, followed by heat treatment at 200 ℃ for 120 minutes to obtain a heat-treated body. The obtained heat-treated body was measured for storage modulus E (MPa) at 25 ℃ by dynamic viscoelasticity measurement (DMA) at a frequency of 1Hz using a measuring apparatus (DMS 6100, manufactured by Hitachi High-Tech Science Corporation).
(Observation of particle bonding Structure)
A copper lead frame and a silicon wafer (length 2 mm. times. width 2mm, thickness 0.35mm) were prepared. Next, the obtained thermally conductive composition was coated on a silicon wafer so that the coating thickness became 25 ± 10 μm, and a copper lead frame was disposed thereon. A laminate was produced in which a silicon wafer, a thermally conductive composition, and a copper lead frame were laminated in this order.
Next, the obtained laminate was heated from 30 ℃ to 200 ℃ under the atmospheric air for 60 minutes, and then heat treatment was performed at 200 ℃ for 120 minutes to cure the heat conductive composition in the laminate, thereby obtaining a heat conductive material.
Next, the cross section of the heat-treated body of the heat-conductive composition in the laminate was observed using a Scanning Electron Microscope (SEM), and the state thereof was evaluated.
In example 1, as shown in fig. 2, it was confirmed that a silver particle connection structure was formed. In the sectional image (fig. 2), it was also confirmed that: the silver particle connection structure includes a plurality of substantially circular resin particles, and the metal layer (silver layer) on the surface of the resin particles is connected to the silver particle connection structure. Further, it was confirmed that: the cured product of the binder resin is present in the silver particle-linked structure at a portion other than silver so as to cover the silver.
(chip shear Strength)
The obtained thermally conductive composition was coated on a copper substrate surface-plated with nickel, and a silicon wafer surface-plated with nickel (2mm × 2mm) was mounted thereon. Then, it took 60 minutes to heat up to 30 to 200 ℃ by an oven, and then, it was cured by heating at 200 ℃ for 120 minutes.
The sample was placed on a hot plate heated to 260 ℃ and the chip shear strength (N/2 mm. times.2 mm) was measured using DAGE-4000 (manufactured by Nordson Corporation).
In examples 1 to 3, cohesive failure occurred inside the thermally conductive material, and in reference example 1, interfacial peeling occurred at the interface between the thermally conductive material and the lead frame.
Using the thermally conductive compositions of examples 1 to 3, semiconductor packages were obtained in the following manner.
The semiconductor element is provided on one surface of the substrate such that the other surface of the semiconductor element faces the one surface of the substrate. A thermally conductive composition containing metal particles is applied to the surface of one surface side of a semiconductor element. The heat spreader is disposed in contact with the thermally conductive composition and covers one surface of the semiconductor element. A structure including a substrate, a semiconductor element, a thermally conductive composition, and a heat sink is subjected to a heat treatment. The semiconductor element and the heat sink are bonded by heat treatment via a thermally conductive material containing a particle-bonded structure formed by sintering metal particles in the thermally conductive composition, and a semiconductor package is obtained.
As comparative example 1, a semiconductor package was obtained using an acrylic adhesive in place of the thermally conductive composition of example 1.
The semiconductor packages of examples 1 to 3 and comparative example 1 were used as evaluation samples, and the thermal diffusivity of the surface of the semiconductor element was measured by a laser flash method. Examples 1 to 3 show a higher thermal diffusivity than comparative example 1, and thus it is understood that the semiconductor packages of examples 1 to 3 can have a structure excellent in heat dissipation characteristics.
In the semiconductor packages of examples 1 to 3, the adhesion strength was higher at the adhesion interface between the thermally conductive material and the semiconductor element and at the adhesion interface between the thermally conductive material and the heat sink than in comparative example 1.
It is understood that the thermal conductive materials of examples 1 to 3 have more excellent chip shear strength than that of reference example 1. By using the thermally conductive materials of examples 1 to 3 as the TIM1 material, a semiconductor package having excellent heat dissipation characteristics can be realized.
This application claims priority based on Japanese application No. 2019-052739, filed on 3/20/2019, and the entire disclosure of which is incorporated herein by reference.

Claims (22)

1. A semiconductor package including a substrate, a semiconductor element provided on the substrate, and a heat sink surrounding a periphery of the semiconductor element, and the semiconductor element and the heat sink are bonded by a thermally conductive material, characterized in that:
the thermally conductive material has a particle-bonded structure formed by sintering metal particles generated by heat treatment.
2. The semiconductor package of claim 1, wherein:
the thermally conductive material has a storage modulus at 25 ℃ of 1 GPa-10.0 GPa, as measured by dynamic viscoelasticity measurement (DMA) at a frequency of 1 Hz.
3. The semiconductor package according to claim 1 or 2, wherein:
the thermal conductivity of the thermally conductive material at 25 ℃ is 10W/mK or more as measured by a laser flash method.
4. The semiconductor package according to any one of claims 1 to 3, wherein:
the metal particles comprise particles composed of a metal,
the particle diameter D50 when the cumulative 50% of the particles composed of the metal is in the cumulative distribution based on the volume is 0.8 [ mu ] m or more and 7.0 [ mu ] m or less.
5. The semiconductor package according to claim 4, wherein:
the standard deviation of the particle diameter of the particles made of metal is less than 2.0 [ mu ] m.
6. The semiconductor package according to claim 4 or 5, wherein:
the particles composed of a metal include 2 or more kinds of particles having different particle diameters D50.
7. The semiconductor package according to any one of claims 4 to 6, wherein:
the particles composed of a metal include spherical particles and plate-like particles.
8. The semiconductor package according to any one of claims 1 to 7, wherein:
the metal particles include metal-coated resin particles composed of resin particles and a metal formed on the surface of the resin particles.
9. The semiconductor package according to any one of claims 1 to 8, wherein:
the metal particles include particles composed of a metal composed of one or more metals selected from the group consisting of silver, gold, and copper.
10. A thermally conductive composition for forming a thermally conductive material in a semiconductor package, the semiconductor package including a substrate, a semiconductor element provided on the substrate, and a heat sink surrounding a periphery of the semiconductor element, and the semiconductor element and the heat sink being joined by the thermally conductive material, the thermally conductive composition characterized by comprising:
metal particles;
a binder resin; and
the monomer is prepared by the following steps of,
the metal particles are sintered by heat treatment to form a particle-bonded structure.
11. The thermally conductive composition of claim 10, wherein:
the thermal conductivity lambda of the thermal conductive composition measured by the following step A is 10W/mK or more,
(step A)
The heat conductive composition took 60 minutes to heat up from 30 ℃ to 200 ℃, and then, heat-treated at 200 ℃ for 120 minutes to obtain a heat-treated body having a thickness of 1mm, and the heat conductivity λ (W/mK) at 25 ℃ was measured for the obtained heat-treated body using a laser flash method.
12. The thermally conductive composition of claim 10 or 11, characterized in that:
the thermally conductive composition has a storage modulus E at 25 ℃ of 1 GPa-10.0 GPa as measured in the following step B,
(step B)
The thermally conductive composition was heated from 30 ℃ to 200 ℃ over 60 minutes, and then heat-treated at 200 ℃ for 120 minutes to obtain a heat-treated body, and the storage modulus E (MPa) at 25 ℃ was measured for the obtained heat-treated body using dynamic viscoelasticity measurement (DMA) at a frequency of 1 Hz.
13. The thermally conductive composition of any of claims 10-12, characterized in that:
the metal particles include particles composed of one or more metal materials selected from silver, gold, and copper.
14. The thermally conductive composition of any of claims 10 to 13, characterized in that:
the binder resin includes 1 or more selected from the group consisting of an epoxy resin, an acrylic resin, and an allyl resin.
15. The thermally conductive composition of any of claims 10-14, characterized in that:
contains a curing agent.
16. The thermally conductive composition of any of claims 10-15, characterized in that:
the monomer includes one or more selected from the group consisting of a diol monomer, an acrylic monomer, an epoxy monomer, and a maleimide monomer.
17. The thermally conductive composition of any of claims 10-16, characterized in that:
contains a radical polymerization initiator.
18. The thermally conductive composition of any one of claims 10 to 17, characterized in that:
contains a silane coupling agent.
19. The thermally conductive composition of any of claims 10-18, characterized in that:
contains a plasticizer.
20. A method of manufacturing a semiconductor package, comprising:
a step of providing a semiconductor element on one surface of a substrate such that the other surface of the semiconductor element faces one surface of the substrate;
a step of applying a heat conductive composition containing metal particles on a surface of one surface side of the semiconductor element;
disposing a heat spreader in contact with the thermally conductive composition and covering at least one surface of the semiconductor element; and
a step of subjecting a structure including the substrate, the semiconductor element, the thermally conductive composition, and the heat spreader to a heat treatment,
in the step of performing the heat treatment, the semiconductor element and the heat spreader are bonded via a thermally conductive material containing a particle-bonded structure formed by sintering the metal particles.
21. The manufacturing method of a semiconductor package according to claim 20, wherein:
a step of drying the thermally conductive composition is included after the coating step and before the disposing step.
22. The manufacturing method of a semiconductor package according to claim 20 or 21, wherein:
in the applying step, the thermally conductive composition is applied using a dispenser.
CN202080023193.6A 2019-03-20 2020-03-11 Semiconductor package, method for manufacturing semiconductor package, and thermally conductive composition used therefor Pending CN113631675A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-052739 2019-03-20
JP2019052739 2019-03-20
PCT/JP2020/010573 WO2020189446A1 (en) 2019-03-20 2020-03-11 Semiconductor package, method for manufacturing semiconductor package and thermally conductive composition used therefor

Publications (1)

Publication Number Publication Date
CN113631675A true CN113631675A (en) 2021-11-09

Family

ID=72519866

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080023193.6A Pending CN113631675A (en) 2019-03-20 2020-03-11 Semiconductor package, method for manufacturing semiconductor package, and thermally conductive composition used therefor

Country Status (5)

Country Link
JP (1) JP6950848B2 (en)
KR (1) KR20210143224A (en)
CN (1) CN113631675A (en)
TW (1) TWI841706B (en)
WO (1) WO2020189446A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11756854B2 (en) 2021-03-18 2023-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and method of fabricating the same
KR20230174805A (en) 2022-06-21 2023-12-29 주식회사 비에스테크닉스 Semiconductor Package With Embedded Thermal Conductive Member And Manufacturing Method Of The Same AND Induction Heating Soldering Apparatus

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016023256A (en) * 2014-07-22 2016-02-08 京セラケミカル株式会社 Thermosetting resin composition, semiconductor device and electric and electronic parts
CN107709418A (en) * 2015-05-08 2018-02-16 汉高知识产权控股有限责任公司 Sintered film and cream and its application method
CN107849356A (en) * 2015-08-03 2018-03-27 纳美仕有限公司 High-performance, heat-transfer surface installation (chip stickup) binding agent
CN107849432A (en) * 2015-07-08 2018-03-27 住友电木株式会社 Heat conductivity composition, semiconductor device, the adhesive bonding method of the manufacture method of semiconductor device and heat sink
US20180323130A1 (en) * 2015-12-22 2018-11-08 Intel Corporation Adhesive polymer thermal interface material with sintered fillers for thermal conductivity in micro-electronic packaging

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001315244A (en) * 2000-05-01 2001-11-13 Jsr Corp Heat conductive sheet, method for manufacturing same and radiation structure using heat conductive sheet
US9070660B2 (en) * 2013-03-15 2015-06-30 Intel Corporation Polymer thermal interface material having enhanced thermal conductivity
US10292309B2 (en) 2013-11-12 2019-05-14 Jnc Corporation Heat sink
JP6511721B2 (en) * 2014-03-26 2019-05-15 住友ベークライト株式会社 Die attach paste and semiconductor device
JP2017022033A (en) * 2015-07-13 2017-01-26 住友ベークライト株式会社 Silver paste and manufacturing method of cured body of silver paste
CN105355610B (en) * 2015-08-27 2019-01-18 华为技术有限公司 A kind of circuit device and manufacturing method
JP6747000B2 (en) * 2016-03-25 2020-08-26 住友ベークライト株式会社 Paste adhesive composition, semiconductor device, method for manufacturing semiconductor device, and method for adhering heat sink
JPWO2019111778A1 (en) * 2017-12-04 2019-12-12 住友ベークライト株式会社 Paste adhesive composition and semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016023256A (en) * 2014-07-22 2016-02-08 京セラケミカル株式会社 Thermosetting resin composition, semiconductor device and electric and electronic parts
CN107709418A (en) * 2015-05-08 2018-02-16 汉高知识产权控股有限责任公司 Sintered film and cream and its application method
CN107849432A (en) * 2015-07-08 2018-03-27 住友电木株式会社 Heat conductivity composition, semiconductor device, the adhesive bonding method of the manufacture method of semiconductor device and heat sink
CN107849356A (en) * 2015-08-03 2018-03-27 纳美仕有限公司 High-performance, heat-transfer surface installation (chip stickup) binding agent
US20180323130A1 (en) * 2015-12-22 2018-11-08 Intel Corporation Adhesive polymer thermal interface material with sintered fillers for thermal conductivity in micro-electronic packaging

Also Published As

Publication number Publication date
TWI841706B (en) 2024-05-11
WO2020189446A1 (en) 2020-09-24
KR20210143224A (en) 2021-11-26
JPWO2020189446A1 (en) 2021-09-13
TW202100703A (en) 2021-01-01
JP6950848B2 (en) 2021-10-13

Similar Documents

Publication Publication Date Title
CN109643662B (en) Chip bonding paste and semiconductor device
WO2011158753A1 (en) Resin paste composition
CN113631675A (en) Semiconductor package, method for manufacturing semiconductor package, and thermally conductive composition used therefor
JP6927455B2 (en) Thermally conductive compositions and semiconductor devices
JP2022069401A (en) Pasty composition, high thermal conductivity material, and semiconductor device
JP2022018051A (en) Pasty resin composition, high heat-conductive material, and semiconductor device
JP6981580B2 (en) Thermally conductive compositions and semiconductor devices
JP6566177B1 (en) Paste adhesive composition and semiconductor device
CN111801397B (en) Paste adhesive composition and semiconductor device
JP2021082640A (en) Conductive paste and semiconductor device
WO2022113923A1 (en) Silver-containing paste, and joined body
JP7279802B2 (en) PASTE RESIN COMPOSITION FOR HIGH THERMAL CONDUCTIVE MATERIAL, HIGH THERMAL CONDUCTIVE MATERIAL, AND SEMICONDUCTOR DEVICE
JP7260079B1 (en) Conductive paste, cured product, sintering accelerator, and sintering acceleration method
WO2022202434A1 (en) Conductive paste, and semiconductor device
CN118510851A (en) Paste resin composition, high thermal conductive material, and semiconductor device
KR20240133997A (en) Paste-like resin composition, high thermal conductivity material, and semiconductor device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination