WO2020113781A1 - 一种柔性显示面板及其显示器件 - Google Patents
一种柔性显示面板及其显示器件 Download PDFInfo
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- WO2020113781A1 WO2020113781A1 PCT/CN2019/071818 CN2019071818W WO2020113781A1 WO 2020113781 A1 WO2020113781 A1 WO 2020113781A1 CN 2019071818 W CN2019071818 W CN 2019071818W WO 2020113781 A1 WO2020113781 A1 WO 2020113781A1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
- H10D86/443—Interconnections, e.g. scanning lines adapted for preventing breakage, peeling or short circuiting
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/435—Cross-sectional shapes or dispositions of interconnections
Definitions
- the invention relates to the technical field of flat display, in particular, a flexible display panel and a display device thereof.
- An aspect of the present invention is to provide a flexible display panel, which can effectively solve the problems such as abnormality in the display screen caused by internal signal delay transmission in the prior art, and ensure that the screen is displayed normally.
- a flexible display panel includes a substrate and an organic thin film layer disposed thereon.
- the organic thin film layer is provided with a first metal layer, a functional layer, and a source-drain metal layer in this order.
- the first metal layer is electrically connected to the source-drain metal layer through a via that passes through the functional layer.
- the constituent material of the first metal layer includes a first metal material
- the constituent material of the source-drain metal layer includes a second metal material
- the first metal material is different from the second metal material.
- the surface pattern shape of the first metal layer is a net shape.
- the first metal material of the first metal layer includes indium tin oxide and/or silver.
- the second metal material of the source-drain metal layer includes titanium and/or aluminum.
- the thickness of the first metal layer is 100-300 nm.
- the thickness of the source-drain metal layer is 400-600 nm.
- the constituent material of the organic thin film layer includes polyimide, and the thickness thereof is 10-20 um.
- the functional layer is a multi-layer structure, including a barrier layer, a buffer layer, an active layer, a gate insulating layer, a gate metal layer, a second insulating layer, a Three metal layers, interlayer insulating layer and organic insulating bending layer.
- the constituent materials of the gate metal layer and the third metal layer both include metal Mo.
- the thickness of the barrier layer is 200-500 nm
- the thickness of the buffer layer is 200-500 nm
- the thickness of the active layer is 20-100 nm
- the gate The thickness of the polar insulating layer is 50-200 nm
- the thickness of the gate metal layer is 150-250 nm
- the thickness of the second insulating layer is 50-200 nm
- the thickness of the third metal layer is 150 ⁇ 250 nm
- the thickness of the interlayer insulating layer is 500 ⁇ 700 nm
- the thickness of the organic insulating bending layer is 1.5 ⁇ 3 um.
- the source-drain metal layer is further provided with a planarization layer, an anode layer, a pixel definition layer, and a support layer.
- the thickness of the planarization layer is 1.5 ⁇ 3 um
- the thickness of the anode layer is 100 ⁇ 250 nm
- the thickness of the pixel definition layer is 1.5 ⁇ 3 um
- the The thickness of the supporting side is 1.5 ⁇ 3 um.
- the constituent materials of the planarization layer, pixel definition layer and support layer include polyimide.
- Still another embodiment of the present invention provides a display device including the flexible display panel according to the present invention.
- the invention relates to a flexible display panel, which uses different first metal layer and source and drain metal layer constituent materials, and the mesh surface pattern of the first metal layer, so that the flexible display device in which it is located is used After the extremely narrow border (border) design, the signal transmitted inside it will not be delayed, thereby eliminating the display abnormality and other defects caused by the signal delay, and ensuring the normal display of the flexible display device.
- FIG. 1 is a schematic structural diagram of a flexible display panel according to an embodiment of the present invention.
- one embodiment of the present invention provides a flexible display panel, including a transparent glass substrate 001, on which a flexible organic thin film layer 002 is provided by coating.
- the material of the organic thin film layer 002 may be polyimide, etc., and the thickness thereof is 10-20um.
- a first metal layer 003, a barrier layer 004, a buffer layer 005, an active layer 006, a gate insulating layer 007, a gate metal layer 008, and a second insulating layer are sequentially arranged on the organic thin film layer 002 009, a third metal layer 010, an interlayer insulating layer 011, an organic insulating bending layer 012, a source-drain metal layer 013, a planarization layer 014, an anode layer 015, a pixel definition layer 016, and a support layer 017.
- the source-drain metal layer 013 and the first metal layer 003 are electrically connected through vias.
- the thickness of the first metal layer 003 is 100-300 nm
- the thickness of the barrier layer 004 is 200-500 nm
- the thickness of the buffer layer 005 is 200-500 nm
- the thickness of the active layer 006 is 20 ⁇ 100nm
- the thickness of the gate insulating layer 007 is 50 ⁇ 200nm
- the thickness of the gate metal layer 008 is 150 ⁇ 250nm
- the thickness of the second insulating layer 009 is 50 ⁇ 200nm
- the third The thickness of the metal layer 010 is 150-250 nm
- the thickness of the interlayer insulating layer 011 is 500-700 nm
- the thickness of the organic insulating bending layer 012 is 1.5-3 ⁇ m
- the thickness of the source-drain metal layer 013 Is 400 ⁇ 600nm
- the thickness of the planarization layer 014 is 1.5 ⁇ 3um
- the thickness of the anode layer 015 is 100 ⁇ 250nm
- the constituent material of the first metal layer 003 may be the material indium tin oxide and/or silver; the constituent material of the gate metal layer 008 and the third metal layer 009 may be the material metal Mo;
- the material of the source-drain metal layer 012 may be titanium and/or aluminum; the material of the anode layer 015 may be indium tin oxide and/or silver; the planarization layer 014, the pixel definition layer 016 and the support
- the constituent material of the layer 017 may be polyimide or the like.
- the second insulating layer 009 and the third metal layer 010 may be patterned using photolithography and dry etching techniques; and the interlayer insulating layer 011, the organic insulating bending layer 012, the source-drain metal layer 013, and the planarization layer 014 may be patterned using exposure and development techniques.
- the patterning method involved above may be determined according to actual needs and is not limited.
- the flexible display panel is divided into two parts according to the common sense of the industry: the left AA area and the right bending area. Because it belongs to the common sense of the industry, it is also according to the industry common sense The method is shown separately, but it still belongs to the whole.
- the present invention also relates to providing a display device, which includes the above-mentioned flexible display panel according to the present invention.
- the invention relates to a flexible display panel, which uses different first metal layer and source and drain metal layer constituent materials, and the mesh surface pattern of the first metal layer, so that the flexible display device in which it is located is used After the extremely narrow border design, the internal signal will not be delayed, thereby eliminating the display abnormalities caused by signal delay and other defects, and ensuring the normal display of the flexible display device.
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Abstract
一种柔性显示面板,包括基板(001)以及其上设置的有机薄膜层(002)。其中有机薄膜层(002)上依次设置有第一金属层(003)、功能层、源漏极金属层(013)。其中第一金属层(003)是通过一穿过功能层的过孔与源漏极金属层(013)电性相接。其中第一金属层(003)构成材料包括第一金属材料,而源漏极金属层(013)的构成材料包括第二金属材料,第一金属材料不同于第二金属材料。该柔性显示面板能够有效解决现有技术中存在的因内部信号延迟传递而造成的显示画面出现异常等不良,保证画面正常显示。
Description
本发明涉及平面显示技术领域,尤其是,其中的一种柔性显示面板及其显示器件。
随着平面显示技术的不断向前发展,柔性显示技术目前已成为下一代主流显示技术,业界的主要厂商也在不断的加大对其的研发投入,以期获得领先的业界地位。
目前常见的柔性显示装置,主要是采用有源矩阵低温多晶硅薄膜晶体管进行驱动。为了满足市场上对于显示区面积不断提高的需求,尤其是手机屏应用方面,对于所谓“全面屏”的极致追求,这其中不但需要下边(border)在变窄的同时还需要耐弯折。
但是,这种极窄边界以及弯折的结构容易造成显示屏幕内部的信号延迟,从而使得柔性屏幕显示的画面出现显示异常等不良。
因此,确有必要来研发一种新型的柔性显示面板,来克服现有技术中的缺陷。
本发明的一个方面是提供一种柔性显示面板,其能够有效解决现有技术中存在的因内部信号延迟传递而造成的其显示画面出现异常等不良,保证其画面正常显示。
本发明采用的技术方案如下:
一种柔性显示面板,其包括基板以及其上设置的有机薄膜层。其中所述有机薄膜层上依次设置有第一金属层、功能层、源漏极金属层。其中所述第一金属层是通过一穿过所述功能层的过孔与所述源漏极金属层电性相接。其中所述第一金属层构成材料包括第一金属材料,所述源漏极金属层的构成材料包括第二金属材料,所述第一金属材料不同于所述第二金属材料。
进一步的,在不同实施方式中,其中所述第一金属层的表面图案形状为网状。
进一步的,在不同实施方式中,其中所述第一金属层的第一金属材料包括氧化铟锡和/或银。
进一步的,在不同实施方式中,其中所述源漏极金属层的第二金属材料包括钛和/或铝。
进一步的,在不同实施方式中,其中所述第一金属层的厚度在100~300 nm。
进一步的,在不同实施方式中,其中所述源漏极金属层的厚度在400~600 nm。
进一步的,在不同实施方式中,其中所述有机薄膜层的构成材料包括聚酰亚胺,其厚度在10~20 um。
进一步的,在不同实施方式中,其中所述功能层为多层结构,包括依次设置的阻挡层、缓冲层、有源层、栅极绝缘层、栅极金属层、第二层绝缘层、第三层金属层、层间绝缘层和有机绝缘弯折层。
进一步的,在不同实施方式中,其中所述栅极金属层和第三层金属层的构成材料均包括金属Mo。
进一步的,在不同实施方式中,其中所述阻挡层的厚度为200~500 nm,所述缓冲层的厚度为200~500 nm,所述有源层的厚度为20~100 nm,所述栅极绝缘层的厚度为50~200 nm,所述栅极金属层的厚度为150~250 nm,所述第二层绝缘层的厚度为50~200 nm,所述第三层金属层的厚度为150~250 nm,所述层间绝缘层的厚度为500~700 nm,以及所述有机绝缘弯折层的厚度为1.5~3 um 。
进一步的,在不同实施方式中,其中所述源漏极金属层上还设置有平坦化层,阳极层、像素定义层及支撑层。
进一步的,在不同实施方式中,其中所述平坦化层的厚度在1.5~3 um,所述阳极层的厚度在100~250 nm ,所述像素定义层的厚度在1.5~3 um,所述支撑侧的厚度在1.5~3 um。
进一步的,在不同实施方式中,其中所述平坦化层、像素定义层和支撑层的构成材料包括聚酰亚胺。
进一步的,本发明的又一实施方式提供了一种显示器件,其包括本发明涉及的所述柔性显示面板。
本发明涉及的一种柔性显示面板,其选用不同的第一金属层和源漏极金属层的构成材料,以及所述第一金属层的网状表面图案,使得其所在的柔性显示装置在采用极窄下边(border)设计后,其内部传递的信号不会被延迟,从而消除由于信号延迟而造成的显示异常等不良,保证了柔性显示装置的正常显示。
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明一个实施方式中涉及的一种柔性显示面板的结构示意图。
以下将结合附图和实施例,对本发明涉及的一种柔性显示面板及其显示器件的技术方案作进一步的详细描述。
请参阅图1所示,本发明的一个实施方式提供了一种柔性显示面板,包括透明玻璃基板001,其上通过涂覆的方式设置有柔性有机薄膜层002。其中所述有机薄膜层002的材料可以是聚酰亚胺等,其厚度为10~20um。
进一步的,所述有机薄膜层002上还依次设置有第一金属层003、阻挡层004、缓冲层005、有源层006、栅极绝缘层007、栅极金属层008、第二层绝缘层009、第三层金属层010、层间绝缘层011、有机绝缘弯折层012、源漏极金属层013、平坦化层014、阳极层015、像素定义层016及支撑层017。其中所述源漏极金属层013与所述第一金属层003通过过孔电性连接。
具体的,其中所述第一金属层003的厚度为100~300nm,阻挡层004的厚度为200~500nm,所述缓冲层005的厚度为200~500nm,所述有源层006的厚度为20~100nm,所述栅极绝缘层007的厚度为50~200nm,所述栅极金属层008的厚度为150~250nm,所述第二层绝缘层009的厚度为50~200nm,所述第三层金属层010的厚度为150~250nm,所述层间绝缘层011的厚度为500~700nm,所述有机绝缘弯折层012的厚度为1.5~3um,所述源漏极金属层013的厚度为400~600nm,所述平坦化层014的厚度为1.5~3um,所述阳极层015的厚度为100~250nm,所述像素定义层016的厚度为1.5~3um,以及所述支撑层017的厚度为1.5~3um。以上各层厚度仅为举例性说明,并不限于,具体可随实际需要而定。
进一步的,其中所述第一层金属层003的构成材料可为材料氧化铟锡和/或银;所述栅极金属层008和第三层金属层009的构成材料可为材料金属Mo;所述源漏极金属层012的构成材料可为材料钛和/或铝;所述阳极层015的构成材料可为氧化铟锡和/或银;所述平坦化层014、像素定义层016以及支撑层017的构成材料可为聚酰亚胺等。
进一步的,在一个具体实施方式中,其中所述第二层绝缘层009和第三层金属层010,可以是利用光刻和干法刻蚀技术将其图案化;而所述层间绝缘层011、有机绝缘弯折层012、源漏极金属层013、平坦化层014可以是采用曝光显影技术将其图案化。以上涉及的图案化方法具体可随实际需要而定,并无限定。
另外,如图中所示,所述的柔性显示面板按业界常识被划为两部分:左部的AA区和右部的弯折区两部分,由于其属于业界常识,因此也按业界通常的做法分开图示,但其还是属于一个整体。
进一步的,本发明还涉及提供一种显示器件,其包括上述本发明涉及的所述柔性显示面板。
本发明涉及的一种柔性显示面板,其选用不同的第一金属层和源漏极金属层的构成材料,以及所述第一金属层的网状表面图案,使得其所在的柔性显示装置在采用极窄下边(border)设计后,其内部信号不会被延迟传递,从而消除由于信号延迟而造成的显示异常等不良,保证了柔性显示装置的正常显示。
本发明的技术范围不仅仅局限于上述说明中的内容,本领域技术人员可以在不脱离本发明技术思想的前提下,对上述实施例进行多种变形和修改,而这些变形和修改均应当属于本发明的范围内。
Claims (10)
- 一种柔性显示面板,包括基板以及其上设置的有机薄膜层,其中所述有机薄膜层上依次设置有第一金属层、功能层、源漏极金属层;其中所述第一金属层是通过一穿过所述功能层的过孔与所述源漏极金属层电性相接;其中所述第一金属层构成材料包括第一金属材料,所述源漏极金属层的构成材料包括第二金属材料;所述第一金属材料不同于所述第二金属材料。
- 根据权利要求1所述的一种柔性显示面板,其中所述第一金属层的表面图案形状为网状。
- 根据权利要求1所述的一种柔性显示面板,其中所述第一金属层的第一金属材料包括氧化铟锡和/或银。
- 根据权利要求1所述的一种柔性显示面板,其中所述源漏极金属层的第二金属材料包括钛和/或铝。
- 根据权利要求1所述的一种柔性显示面板,其中所述第一金属层的厚度在100~300 nm。
- 根据权利要求1所述的一种柔性显示面板,其中所述源漏极金属层的厚度在400~600 nm。
- 根据权利要求1所述的一种柔性显示面板,其中所述有机薄膜层的构成材料包括聚酰亚胺,其厚度在10~20 um。
- 根据权利要求1所述的一种柔性显示面板,其中所述功能层为多层结构,包括依次设置的阻挡层、缓冲层、有源层、栅极绝缘层、栅极金属层、第二层绝缘层、第三层金属层、层间绝缘层和有机绝缘弯折层。
- 根据权利要求8所述的一种柔性显示面板,其中所述栅极金属层和第三层金属层的构成材料均包括金属Mo。
- 一种显示器件,包括根据权利要求1所述的柔性显示面板。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/319,358 US20200176483A1 (en) | 2018-12-03 | 2019-01-15 | Flexible display panel and display device thereof |
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| CN201811467435.1A CN109638018A (zh) | 2018-12-03 | 2018-12-03 | 一种柔性显示面板及其显示器件 |
| CN201811467435.1 | 2018-12-03 |
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| CN110429088A (zh) | 2019-07-18 | 2019-11-08 | 武汉华星光电半导体显示技术有限公司 | 一种tft阵列基板及其显示面板 |
| CN113257836B (zh) | 2021-05-07 | 2022-08-05 | 武汉华星光电半导体显示技术有限公司 | 阵列基板及显示面板 |
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| KR102597681B1 (ko) * | 2016-09-19 | 2023-11-06 | 삼성디스플레이 주식회사 | 표시 장치 |
| CN107680974B (zh) * | 2017-09-21 | 2020-12-29 | 武汉华星光电半导体显示技术有限公司 | 一种显示面板和显示装置 |
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| US20100270563A1 (en) * | 2009-04-23 | 2010-10-28 | Seiko Epson Corporation | Method of manufacturing semiconductor device, semiconductor device, active matrix device, electro-optical device, and electronic apparatus |
| CN102184928A (zh) * | 2010-12-29 | 2011-09-14 | 友达光电股份有限公司 | 显示元件及其制造方法 |
| US20170278974A1 (en) * | 2016-03-24 | 2017-09-28 | Joled Inc. | Thin film transistor |
| CN107026178A (zh) * | 2017-04-28 | 2017-08-08 | 深圳市华星光电技术有限公司 | 一种阵列基板、显示装置及其制作方法 |
| CN108461529A (zh) * | 2018-03-29 | 2018-08-28 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
| CN108598091A (zh) * | 2018-05-03 | 2018-09-28 | 武汉华星光电半导体显示技术有限公司 | 一种阵列基板及其制作方法 |
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