WO2020113702A1 - 一种柔性有机发光显示装置及其制备方法 - Google Patents

一种柔性有机发光显示装置及其制备方法 Download PDF

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WO2020113702A1
WO2020113702A1 PCT/CN2018/123124 CN2018123124W WO2020113702A1 WO 2020113702 A1 WO2020113702 A1 WO 2020113702A1 CN 2018123124 W CN2018123124 W CN 2018123124W WO 2020113702 A1 WO2020113702 A1 WO 2020113702A1
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layer
pixel isolation
display device
emitting display
flexible
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French (fr)
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汪博
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/868—Arrangements for polarized light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8793—Arrangements for polarized light emission

Definitions

  • the invention relates to the field of display technology, in particular to a flexible organic light-emitting display device and a preparation method thereof.
  • Organic light-emitting display device (English name: Organic Light-Emitting Diode (OLED for short) is also known as organic electro-laser display device and organic light-emitting semiconductor.
  • the basic structure of OLED is a thin and transparent semiconductor indium tin oxide (ITO) connected to the positive electrode of electricity, plus another metal cathode, wrapped in a sandwich-like structure.
  • the whole structure layer includes: hole transport layer (HTL), light emitting layer (EL) and electron transport layer (ETL).
  • the positive hole and the cathode charge When the power is supplied to an appropriate voltage, the positive hole and the cathode charge will combine in the light-emitting layer, and under the action of the Coulomb force, they will recombine with a certain probability to form excitons (electron-hole pairs) in the excited state, and this excitation
  • the state is unstable in the usual environment.
  • Excitons in the excited state recombine and transfer energy to the luminescent material, making it transition from the ground state energy level to the excited state.
  • the excited state energy generates photons through the radiation relaxation process and releases light energy. , Produces light, and produces three primary colors of red, green and blue RGB according to its formula, forming the basic color.
  • OLED the characteristic of OLED is that it emits light by itself, unlike thin film transistor liquid crystal display devices
  • Film transistor-liquid crystal display (TFT-LCD for short) requires a backlight, so visibility and brightness are high.
  • OLED has the advantages of low voltage demand, high power saving efficiency, fast response, light weight, thin thickness, simple structure, low cost, wide viewing angle, almost infinitely high contrast, low power consumption, and extremely high response speed.
  • TFT-LCD thin film transistor liquid crystal display
  • An object of the present invention is to provide a flexible organic light-emitting display device, which can solve the problem of low bending performance of current flexible display devices.
  • the present invention provides a flexible organic light-emitting display device, which defines a bending region and a straight region; it includes: a flexible substrate, an insulating layer, a polymer flat layer, an anode, and a pixel isolation layer arranged in this order.
  • the flexible substrate is arranged in the bending zone and the straight zone; the buffer layer is arranged on the flexible substrate; the insulating layer is arranged on the buffer layer; and the polymer flat layer is arranged on the The insulating layer; the pixel isolation layer and the anode are alternately disposed on the polymer flat layer; the pixel isolation layer includes a first pixel isolation layer disposed in a bending region and a pixel disposed in a flat region A second pixel isolation layer; the thickness of the first pixel isolation layer is greater than the thickness of the second pixel definition layer.
  • the thickness of the second pixel isolation layer ranges from 0.5-2 ⁇ m.
  • the thickness range of the first pixel isolation layer is 0.6-4 ⁇ m.
  • the insulating layer is composed of a first insulating layer, a second insulating layer and a third insulating layer
  • the insulating layer is further provided with a gate, a source and a drain.
  • the flexible organic light-emitting display device further includes: an organic layer disposed on the pixel isolation layer and the anode; an encapsulation layer disposed on the organic layer; and Structural layer, the structural layer is disposed on the encapsulation layer.
  • the organic layer includes: a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, an electron transport layer, an electron injection layer, a cathode, a cavity length adjustment layer, and a LiF layer.
  • the structural layer includes: a polarizer, a touch layer and a cover.
  • the encapsulation layer includes an encapsulation layer composed of an inorganic material, and the inorganic material is at least one of SiNx, SiOx, SiONx, SiCNx, and Al2O3.
  • the encapsulation layer includes an encapsulation layer composed of an organic material
  • the organic material is at least one of acrylic and epoxy resin.
  • Step S1 providing a flexible substrate
  • Step S2 forming a buffer layer on the flexible substrate
  • Step S3 providing an insulating layer on the buffer layer
  • Step S4 setting a polymer flat layer on the insulating layer
  • Step S5 coating a pixel isolation layer on the polymer flat layer by photolithography, and then using a yellow process to etch away the pixel isolation layer in the flat area but retaining the pixels in the bending area The isolation layer, and then coating the pixel isolation layer once on the polymer flat layer, thereby forming a first pixel isolation layer located in the bending region and a second pixel isolation layer located in the flat region;
  • the photo process etches out all the pixel areas and fills to form the anode;
  • Step S6 providing an organic layer on the first pixel isolation layer, the second pixel isolation layer and the anode;
  • Step S7 setting an encapsulation layer on the organic layer
  • Step S8 Set a structural layer on the encapsulation layer.
  • the invention relates to a flexible organic light-emitting display device and a preparation method thereof.
  • the mechanical stress generated when the flexible OLED display device is bent can be reduced, thereby improving the bending performance of the flexible OLED display device.
  • FIG. 1 is a schematic structural diagram of a flexible organic light-emitting display device of the present invention.
  • FIG. 2 is a flowchart of a method for manufacturing a flexible organic light-emitting display device of the present invention.
  • the component When certain components are described as “on” another component, the component may be directly placed on the other component; there may also be an intermediate component, which is placed on the intermediate component , And the intermediate component is placed on another component.
  • the two When a component is described as “installed to” or “connected to” another component, the two can be understood to be “installed” or “connected” directly, or a component “installed to” or “connected to” through an intermediate component Another component.
  • a flexible organic light-emitting display device defines a bending region 100 and a straight region 200, and includes a flexible substrate 1, a buffer layer 2, a first insulating layer 31, a second insulating layer 32, a The three insulating layers 33, the polymer flat layer 4, the first pixel isolation layer 51, the second pixel isolation layer 52, the anode 6, the organic layer 7, the encapsulation layer 8, and the structural layer 9.
  • the flexible substrate 1 is composed of metal or polymer materials, and the flexible substrate 1 composed of the flexible substrate 1 has good flexibility and can meet the requirements of different flexible OLED display devices.
  • the buffer layer 2 is disposed on the flexible substrate 1, and the buffer layer 2 is mainly composed of at least one of SiNx or SiOx.
  • the buffer layer 2 thus formed has better density and flatness.
  • the first insulating layer 31 is disposed on the buffer layer 2, and the first insulating layer 31 is mainly composed of at least one of SiNx or SiOx.
  • the buffer layer 2 thus formed has better density and flatness.
  • the second insulating layer 32 is disposed on the first insulating layer 31, and the second insulating layer 32 is mainly composed of at least one of SiNx or SiOx.
  • the buffer layer 2 thus formed has better density and flatness.
  • the third insulating layer 33 is disposed on the second insulating layer 32.
  • the third insulating layer 33 is mainly composed of at least one of SiNx or SiOx.
  • the buffer layer 2 thus formed has better density and flatness.
  • the first insulating layer 31, the second insulating layer 32 and the third insulating 33 are further provided with a gate 34, a source 35 and a drain 36.
  • a positive voltage is applied to the gate 34, an electric field is generated between the gate 34 and the semiconductor layer. Under the effect of this electric field, an electron flow path is formed, which causes a conduction state between the source 35 and the drain 36 .
  • the greater the voltage applied to the gate 34 the more electrons are attracted, so the larger the on-current.
  • a negative voltage is applied to the gate 34, a closed state is formed between the source 35 and the drain 36.
  • the pixel isolation layer includes a first pixel isolation layer 51 disposed in the bending region and a second pixel isolation layer 52 disposed in the flat region; the thickness of the first pixel isolation layer 52 is greater than the second pixel definition layer 51 thickness. Specifically, the thickness range of the second pixel isolation layer 52 is 0.5-2 ⁇ m, and the thickness range of the first pixel isolation 51 is 0.6-4 ⁇ m. When the thickness of the second pixel isolation layer 52 is less than 0.5 ⁇ m, the uniformity and film formation of the second pixel isolation layer 52 will be reduced; when the thickness of the second pixel isolation layer 52 is greater than 2 ⁇ m, it will cause waste of materials .
  • the thickness of the first pixel isolation 51 is in the range of 0.6-4 ⁇ m. If it exceeds this range, it will cause processing difficulties and increase processing costs. By increasing the thickness of the pixel isolation layer in the bending region, the mechanical stress generated when the flexible OLED display device is bent can be reduced, thereby improving the bending performance of the flexible OLED display device.
  • a layer of pixel isolation layer may be coated on the polymer flat layer 4 by photolithography technology, and then the pixel isolation layer located in the flat area is etched away using the yellow process, but the pixel isolation layer located in the bending area is retained ; Then, the pixel isolation layer is coated once on the polymer flat layer, with a thickness of 0.5-2 ⁇ m, thereby forming the first pixel isolation layer 51 located in the bending region and the second pixel located in the flat region In the isolation layer 52, the thickness of the first pixel isolation 51 is formed in the range of 0.6-4 ⁇ m, and then all the pixel regions are etched by the yellow process to fill and form the anode 6.
  • the photolithography technology refers to the technology of transferring the pattern on the mask to the substrate by means of photoresist (also known as photoresist) under the action of light.
  • the main process is as follows: first, the ultraviolet light is irradiated to the surface of the substrate with a layer of photoresist film through the mask plate, causing a chemical reaction of the photoresist in the exposed area; and then dissolving and removing the exposed area or the unexposed area through the development technique Photoresist (the former is called positive photoresist, the latter is called negative photoresist), so that the pattern on the reticle is copied to the photoresist film; finally, the pattern is transferred to the substrate by etching technology.
  • photoresist also known as photoresist
  • the yellow light process is to protect the bottom layer of the photosensitive material (also called photoresist or photoresist) coated on the surface of the glass after exposure and development, and then to etch and remove the film and finally The process of obtaining permanent graphics.
  • the photosensitive material also called photoresist or photoresist
  • the organic layer 7 includes a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, an electron transport layer, an electron injection layer, a cathode, a cavity length adjustment layer, and a LiF layer.
  • the organic layer 7 can release light energy and provide a light source for the flexible OLED display device.
  • the introduction of the LiF layer can better modify the surface of the organic layer 7, reduce the formation of defect states at the interface between the anode 6 and the organic layer 7, and enhance the stability of the flexible OLED display device.
  • the encapsulation layer 8 includes an encapsulation layer made of inorganic materials or an encapsulation layer made of organic materials.
  • the inorganic material is at least one of SiNx, SiOx, SiONx, SiCNx, and Al2O3.
  • the organic material is at least one of acrylic and epoxy resin.
  • the thus formed buffer layer 2 has better density and flatness, so as to better prevent the organic layer 7 from being invaded by water and oxygen, protect internal materials, and extend the service life of the flexible OLED display device.
  • the structural layer 9 includes: a polarizer, a touch layer and a cover.
  • a flowchart of a method for manufacturing a flexible organic light-emitting display device of the present invention includes: step S1: step S1: providing a flexible substrate 1; step S2: providing a buffer layer 2 on the flexible substrate 1; step S3: providing an insulating layer on the buffer layer 2; step S4: A polymer flat layer 4 is provided on the insulating layer; Step S5: a layer of pixel isolation is coated on the polymer flat layer 4 by photolithography, and then the pixel isolation located in the flat area 200 is etched away using a yellow photo process The layer retains the pixel isolation layer located in the bending region, and then coats the pixel isolation layer once on the polymer flat layer 4, the first pixel isolation layer 51 located in the bending region and the pixel isolation layer located in the flat region The second pixel isolation layer 52, and then etch out all the pixel regions by the yellow process, fill to form the anode 6; Step S6: in the first pixel isolation layer 51, the second pixel

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Abstract

本发明涉及一种柔性有机发光显示装置。其中包括：柔性基底、绝缘层、聚合物平坦层、阳极以及像素隔离层。其中所述像素隔离层与所述阳极相互交错设置于所述聚合物平坦层上；所述像素隔离层由设置在弯折区的第一像素隔离层和平直区的第二像素隔离层组成；所述第一像素隔离层的厚度大于所述第二像素定义层的厚度。本发明还涉及一种柔性有机发光显示装置的制备方法，通过增加弯折区的像素隔离层的厚度，可以减小柔性OLED显示装置在弯折时产生的机械应力，从而改善柔性OLED显示装置的弯折性能。

Description

一种柔性有机发光显示装置及其制备方法 技术领域
本发明涉及显示技术领域，具体涉及一种柔性有机发光显示装置及其制备方法。
 背景技术
有机发光显示装置(英文全称：Organic Light-Emitting Diode, 简称OLED)又称为有机电激光显示装置、有机发光半导体。OLED的基本结构是由一薄而透明具有半导体特性的铟锡氧化物(ITO)与电力之正极相连，再加上另一个金属阴极，包成如三明治的结构。整个结构层中包括了:空穴传输层(HTL)、发光层(EL)与电子传输层(ETL)。当电力供应至适当电压时，正极空穴与阴极电荷就会在发光层中结合，在库伦力的作用下以一定几率复合形成处于激发态的激子（电子-空穴对），而此激发态在通常的环境中是不稳定的，激发态的激子复合并将能量传递给发光材料，使其从基态能级跃迁为激发态，激发态能量通过辐射驰豫过程产生光子，释放出光能，产生光亮，依其配方不同产生红、绿和蓝RGB三基色，构成基本色彩。
首先OLED的特性是自己发光，不像薄膜晶体管液晶显示装置（英文全称：Thin film transistor-liquid crystal display，简称TFT-LCD）需要背光，因此可视度和亮度均高。其次OLED具有电压需求低、省电效率高、反应快、重量轻、厚度薄，构造简单，成本低、广视角、几乎无穷高的对比度、较低耗电、极高反应速度等优点，已经成为当今最重要的显示技术之一，正在逐步替代 TFT-LCD，有望成为继LCD之后的下一代主流显示技术。
 技术问题
随着时代的进步发展，平面显示装置已经满足不了许多特殊情况的需求，使得业界开始研究柔性可弯折的显示装置。其中由于OLED可以利用柔性材料作为柔性基底，进而制成柔性可弯折的显示装置。因此，如何提高柔性显示装置的弯折性能成为当下的关键问题。
 技术解决方案
本发明的一个目的是提供一种柔性有机发光显示装置，其能够解决目前柔性显示装置存在的弯折性能低的问题。
为了解决上述问题，本发明提供一种柔性有机发光显示装置，其定义有弯折区和平直区；包括依次设置的：柔性基底、绝缘层、聚合物平坦层、阳极以及像素隔离层。其中所述柔性基底设置于所述的弯折区和平直区；所述缓冲层设置在所述柔性基底上；所述绝缘层设置在所述缓冲层上；所述聚合物平坦层设置在所述绝缘层上；所述像素隔离层与所述阳极相互交错设置于所述聚合物平坦层上；所述像素隔离层包括设置在弯折区的第一像素隔离层和设置在平直区的第二像素隔离层；所述第一像素隔离层的厚度大于所述第二像素定义层的厚度。
进一步地，其中所述第二像素隔离层的厚度范围为0.5-2μm。
进一步地，其中所述第一像素隔离层的厚度范围为0.6-4μm。
进一步地，其中所述绝缘层由第一绝缘层、第二绝缘层以及第三绝缘层组成，所述绝缘层中还设有栅极、源极和漏极。
进一步地，其中所述柔性有机发光显示装置还包括：有机层，所述有机层设置于所述像素隔离层和所述阳极上；封装层，所述封装层设置在所述有机层上；以及结构层，所述结构层设置于所述封装层上。
进一步地，其中所述有机层包括：空穴注入层、空穴传输层、电子阻挡层、发光层、电子传输层、电子注入层、阴极、腔长调节层以及LiF层。
进一步地，其中所述结构层包括：偏光片、触控层以及封面。
进一步地，其中所述封装层包括由无机材料构成的封装层，所述无机材料为SiNx、SiOx、SiONx、SiCNx、Al2O3中的至少一种。
进一步地，其中所述封装层包括由有机材料构成的封装层，所述有机材料为亚克力，环氧树脂中的至少一种。本发明的又一个目的是提供一种柔性有机发光显示装置的制备方法，其中所述柔性有机发光显示装置定义有弯折区和平直区；包括以下步骤：
步骤S1：提供一柔性基底；
步骤S2：在所述柔性基底上形成缓冲层；
步骤S3：在所述缓冲层上设置绝缘层；
步骤S4：在所述绝缘层上设置聚合物平坦层；
步骤S5：通过光刻技术在所述聚合物平坦层上涂布一层像素隔离层，然后用黄光工序蚀刻掉位于所述平直区的像素隔离层但保留位于所述弯折区的像素隔离层，再在聚合物平坦层上进行一次像素隔离层的涂布，从而形成位于所述弯折区的第一像素隔离层以及位于所述平直区的第二像素隔离层；然后用黄光工序蚀刻出全部的像素区域，填充形成阳极；
步骤S6：在所述第一像素隔离层、所述第二像素隔离层和所述阳极上设置有机层；
步骤S7：在所述有机层上设置封装层；
步骤S8：在所述封装层上设置结构层。
 有益效果
本发明涉及一种柔性有机发光显示装置及其制备方法。通过增加弯折区的像素隔离层的厚度，可以减小柔性OLED显示装置在弯折时产生的机械应力，从而改善柔性OLED显示装置的弯折性能。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明柔性有机发光显示装置的结构示意图。
图2是本发明柔性有机发光显示装置的制备方法的流程图。
图中部件标识如下：
100、弯折区                      200、平直区
1、柔性基底                      2、缓冲层
31、第一绝缘层                   32、第二绝缘层
33、第三绝缘层                   34、栅极
35、源极                         36、漏极
4、聚合物平坦层                  51、第一像素隔离层
52、第二像素隔离层               6、阳极
7、有机层                        8、封装层
9、结构层
 本发明的最佳实施方式
以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。
本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是附图中的方向，本文所使用的方向用语是用来解释和说明本发明，而不是用来限定本发明的保护范围。
在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。此外，为了便于理解和描述，附图所示的每一组件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。
当某些组件，被描述为“在”另一组件“上”时，所述组件可以直接置于所述另一组件上；也可以存在一中间组件，所述组件置于所述中间组件上，且所述中间组件置于另一组件上。当一个组件被描述为“安装至”或“连接至”另一组件时，二者可以理解为直接“安装”或“连接”，或者一个组件通过一中间组件“安装至”或“连接至”另一个组件。
如图1所示，一种柔性有机发光显示装置，定义有弯折区100和平直区200，包括依次设置的柔性基底1、缓冲层2、第一绝缘层31、第二绝缘层32、第三绝缘层33、聚合物平坦层4以及第一像素隔离层51、第二像素隔离层52以、阳极6、有机层7、封装层8以及结构层9。
其中，柔性基底1由金属或聚合物类材料组成，由此组成的柔性基底1的柔韧性好，能满足不同的柔性OLED显示装置的需求。
其中，缓冲层2设置于所述柔性基底1上，所述缓冲层2主要由SiNx或者SiOx中的至少一种组成。由此形成的缓冲层2致密度和平整度比较好。
其中，第一绝缘层31设置于所述缓冲层2上，所述第一绝缘层31主要由SiNx或者SiOx中的至少一种组成。由此形成的缓冲层2致密度和平整度比较好。
其中，第二绝缘层32设置于所述第一绝缘层31上，所述第二绝缘层32主要由SiNx或者SiOx中的至少一种组成。由此形成的缓冲层2致密度和平整度比较好。
其中，第三绝缘层33设置于所述第二绝缘层32上，所述第三绝缘层33主要由SiNx或者SiOx中的至少一种组成。由此形成的缓冲层2致密度和平整度比较好。
其中，在所述第一绝缘层31、第二绝缘层32以及第三绝缘33中还设置有栅极34、源极35和漏极36。当栅极34施加正电压时，在栅极34和半导体层之间会产生一个电场，在这个电场的作用下，形成了电子流道，使源极35和漏极36之间形成导通状态。在栅极34施加电压越大，吸引的电子越多，所以导通电流越大。在栅极34施加负电压时，源极35和漏极36之间形成关闭状态。
其中，像素隔离层和阳极6相互交错设置于所述聚合物平坦层4上。所述像素隔离层包括设置在弯折区的第一像素隔离层51和设置在平直区的第二像素隔离层52；所述第一像素隔离层52的厚度大于所述第二像素定义层51的厚度。具体的所述第二像素隔离层52的厚度范围为0.5-2μm，所述第一像素隔离51的厚度范围为0.6-4μm。当第二像素隔离层52的厚度小于0.5μm，所述第二像素隔离层52的均匀性及成膜性会有所降低；当第二像素隔离层52的厚度大于2μm，会造成材料的浪费。所述第一像素隔离51的厚度范围为0.6-4μm，超出此范围会造成加工难度，造成加工成本提高。通过增加弯折区的像素隔离层的厚度，可以减小柔性OLED显示装置在弯折时产生的机械应力，从而改善柔性OLED显示装置的弯折性能。
其中可以通过光刻技术在所述聚合物平坦层4上涂布一层像素隔离层，然后用黄光工序蚀刻掉位于平直区的像素隔离层但保留位于所述弯折区的像素隔离层；然后再在聚合物平坦层上进行一次像素隔离层的涂布，厚度为0.5-2μm，从而形成位于所述弯折区的第一像素隔离层51以及位于所述平直区的第二像素隔离层52，形成所述第一像素隔离51的厚度范围为0.6-4μm，然后用黄光工序蚀刻出全部的像素区域，填充形成阳极6。
其中光刻技术是指在光照作用下，借助光致抗蚀剂（又名光刻胶）将掩膜版上的图形转移到基片上的技术。其主要过程为：首先紫外光通过掩膜版照射到附有一层光刻胶薄膜的基片表面，引起曝光区域的光刻胶发生化学反应；再通过显影技术溶解去除曝光区域或未曝光区域的光刻胶（前者称正性光刻胶，后者称负性光刻胶），使掩膜版上的图形被复制到光刻胶薄膜上；最后利用刻蚀技术将图形转移到基片上。
其中黄光工序是通过对涂覆在玻璃表面的光敏性物质（又称为光刻胶或光阻），经曝光、显影后留下的部分对底层起保护作用，然后进行蚀刻脱膜并最终获得永久性图形的过程。
其中，所述有机层7包括：空穴注入层、空穴传输层、电子阻挡层、发光层、电子传输层、电子注入层、阴极、腔长调节层以及LiF层。所述有机层7可以释放出光能，为柔性OLED显示装置提供光源。其中LiF层的引入可以较好地修饰有机层7表面，减少了阳极6和有机层7界面缺陷态的形成，增强了柔性OLED显示装置的稳定性。
其中，所述封装层8包括由无机材料构成的封装层或者由有机材料构成的封装层。所述无机材料为SiNx、SiOx、SiONx、SiCNx以及Al2O3中的至少一种。所述有机材料为亚克力，环氧树脂中的至少一种。由此形成的缓冲层2致密度和平整度比较好，从而可以更好地防止有机层7被水氧入侵，保护内部材料，延长柔性OLED显示装置的使用寿命。
其中，所述结构层9包括：偏光片、触控层以及封面。
如图2所示，本发明柔性有机发光显示装置的制备方法的流程图。其中包括：步骤S1：步骤S1：提供一设置柔性基底1；步骤S2：在所述柔性基底1上设置缓冲层2；步骤S3：在所述缓冲层2上设置绝缘层；步骤S4：在所述绝缘层上设置聚合物平坦层4；步骤S5：通过光刻技术在所述聚合物平坦层4上涂布一层像素隔离层，然后用黄光工序蚀刻掉位于平直区200的像素隔离层保留位于弯折区的像素隔离层，然后再在聚合物平坦层4上进行一次像素隔离层的涂布，位于所述弯折区的第一像素隔离层51以及位于所述平直区的第二像素隔离层52，然后用黄光工序蚀刻出全部的像素区域，填充形成阳极6；步骤S6：在所述第一像素隔离层51、所述第二像素隔离层52和所述阳极6上设置有机层7；步骤S7：在所述有机层7上设置封装层8；步骤S8：在所述封装层8上设置结构层9。
以上对本发明所提供的柔性OLED基板结构及柔性OLED显示装置进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本发明的方法及其核心思想，而并不用于限制本发明。在每个示例性实施方式中对特征或方面的描述通常应被视作适用于其他示例性实施例中的类似特征或方面。尽管参考示例性实施例描述了本发明，但可建议所属领域的技术人员进行各种变化和更改。本发明意图涵盖所附权利要求书的范围内的这些变化和更改。
以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种柔性有机发光显示装置，其中包括：
    弯折区和平直区；
    柔性基底；所述柔性基底设置于所述的弯折区和平直区；
    缓冲层，所述缓冲层设置在所述柔性基底上；
    绝缘层，所述绝缘层设置在所述缓冲层上；
    聚合物平坦层，所述聚合物平坦层设置在所述绝缘层上；
    阳极；以及
    像素隔离层，所述像素隔离层与所述阳极相互交错设置于所述聚合物平坦层上；
    像素隔离层，所述像素隔离层包括设置在弯折区的第一像素隔离层和设置在平直区的第二像素隔离层；
    所述第一像素隔离层的厚度大于所述第二像素定义层的厚度。
  2. 根据权利要求1所述的柔性有机发光显示装置，其中所述第二像素隔离层的厚度范围为0.5-2μm。
  3. 根据权利要求1所述的柔性有机发光显示装置，其中所述第一像素隔离层的厚度范围为0.6-4μm。
  4. 根据权利要求1所述的柔性有机发光显示装置，其中所述绝缘层由第一绝缘层、第二绝缘层以及第三绝缘层组成，所述绝缘层中还设有栅极、源极和漏极。
  5. 根据权利要求1所述的柔性有机发光显示装置，其中还包括：
    有机层，所述有机层设置于所述像素隔离层和所述阳极上；
    封装层，所述封装层设置在所述有机层上；以及
    结构层，所述结构层设置于所述封装层上。
  6. 根据权利要求5所述的柔性有机发光显示装置，其中所述有机层包括：空穴注入层、空穴传输层、电子阻挡层、发光层、电子传输层、电子注入层、阴极、腔长调节层以及LiF层。
  7. 根据权利要求5所述的柔性有机发光显示装置，其中所述结构层包括：
    偏光片、触控层以及封面。
  8. 根据权利要求5所述的柔性有机发光显示装置，其中所述封装层包括由无机材料构成的封装层，所述无机材料为SiNx、SiOx、SiONx、SiCNx以及Al2O3中的至少一种。
  9. 根据权利要求5所述的柔性有机发光显示装置，其中所述封装层包括由有机材料构成的封装层，所述有机材料为亚克力和环氧树脂中的至少一种。
  10. 一种柔性有机发光显示装置的制备方法，其中包括：
    步骤S1： 提供一柔性基底；
    步骤S2： 在所述柔性基底上形成缓冲层；
    步骤S3： 在所述缓冲层上设置绝缘层；
    步骤S4： 在所述绝缘层上设置聚合物平坦层；
    步骤S5： 通过光刻技术在所述聚合物平坦层上涂布一层像素隔离层，然后用黄光工序蚀刻掉位于平直区的像素隔离层但保留位于所述弯折区的像素隔离层；然后再在聚合物平坦层上进行一次像素隔离层的涂布，从而形成位于所述弯折区的第一像素隔离层以及位于所述平直区的第二像素隔离层，然后用黄光工序蚀刻出全部的像素区域，填充形成阳极；
    步骤S6： 在所述第一像素隔离层、所述第二像素隔离层和所述阳极上设置有机层；
    步骤S7： 在所述有机层上设置封装层；
    步骤S8： 在所述封装层上设置结构层。
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