WO2020107809A1 - 一种led芯片、显示面板的组装设备及组装方法 - Google Patents

一种led芯片、显示面板的组装设备及组装方法 Download PDF

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Publication number
WO2020107809A1
WO2020107809A1 PCT/CN2019/086058 CN2019086058W WO2020107809A1 WO 2020107809 A1 WO2020107809 A1 WO 2020107809A1 CN 2019086058 W CN2019086058 W CN 2019086058W WO 2020107809 A1 WO2020107809 A1 WO 2020107809A1
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Prior art keywords
led chip
magnetic
substrate
transfer
chip
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PCT/CN2019/086058
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English (en)
French (fr)
Inventor
郭双
田文亚
Original Assignee
昆山工研院新型平板显示技术中心有限公司
昆山国显光电有限公司
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Priority to KR1020217017862A priority Critical patent/KR102544587B1/ko
Publication of WO2020107809A1 publication Critical patent/WO2020107809A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67709—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations using magnetic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68309—Auxiliary support including alignment aids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

Definitions

  • the present application relates to display technology, in particular to LED chip and display panel assembly equipment and assembly methods.
  • the method of setting a plurality of LED chips may include: grasping the LED chips one by one by using a mechanical device, and placing the LED chips one by one at a predetermined position in the receiving substrate.
  • the present application provides an LED chip and display panel assembly equipment and assembly method.
  • the LED chip provided by the present application includes a chip body and a magnetic member disposed on the chip body.
  • the magnetic member can be adsorbed under the action of magnetic adsorption force;
  • the chip body includes a substrate and an epitaxial layer structure disposed on the substrate, the magnetic member is located on the epitaxial layer structure away from the substrate Side.
  • the present application also provides an assembly device for a display panel.
  • the assembly equipment includes a transfer device for transferring the LED chip to the receiving substrate.
  • the LED chip includes a chip body and a magnetic member disposed on the chip body;
  • the transfer device includes: a transfer substrate; a plurality of transfer heads, the plurality of transfer heads are fixed to at least at least one of the transfer substrates in an array manner On one side surface, the LED chip corresponds to at least one of the transfer heads; a control component is used to control each of the transfer heads to generate a magnetic attraction force or release the magnetic attraction force to attract or release the LED chip.
  • the application also provides a method for assembling the display panel.
  • the assembling method includes: providing a donor substrate on which a plurality of LED chips are provided, wherein the LED chip includes a chip body and a magnetic member provided on the chip body; controlling a plurality of transfer heads to generate magnetism Adsorption force, the magnetic absorption force acts on the corresponding magnetic piece of the LED chip, the magnetic absorption force is greater than the bonding force between the LED chip and the donor substrate, so that a plurality of LEDs
  • the chip is adsorbed from the donor substrate, wherein a plurality of the transfer heads are fixed in an array on at least one surface of the transfer substrate; the transfer substrate is moved above the receiving substrate; the plurality of transfer heads are controlled to remove the magnetic attraction force, In this way, the plurality of transfer heads releases the plurality of LED chips to the receiving substrate.
  • the chip body of the LED chip provided by the present application is provided with a magnetic member, which can be adsorbed under the action of the magnetic adsorption force generated by the external transfer device, thereby causing the LED chip to be adsorbed; and the traditional machine Compared with grasping LED chips, magnetic adsorption can reduce the damage to the LED chips, and magnetic adsorption is more convenient. Therefore, the efficiency of setting multiple LED chips in the display panel can be improved.
  • the transfer device in the display panel assembly device includes a plurality of transfer heads and a control assembly.
  • the control assembly can individually control the generation of each transfer head or release the magnetic member that can act on the corresponding LED chip Magnetic adsorption force, so that each transfer head can separately absorb or release LED chips, so that selective transfer of multiple LED chips can be achieved, thereby improving the efficiency of setting multiple LED chips in the display panel.
  • FIG. 1 is a schematic structural diagram of an LED chip provided by an exemplary embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of a display panel assembly device provided by an exemplary embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of a control component provided by an exemplary embodiment in FIG. 2;
  • FIG. 4 is a schematic flowchart of a method of assembling a display panel provided by an exemplary embodiment of the present application
  • FIG. 5 is a schematic structural diagram provided by an exemplary embodiment corresponding to steps S101 to S104 in FIG. 4.
  • the inventor of the present application found during the long-term research that because of the large number of LED chips that need to be set in the display panel, it takes a lot of time and low efficiency to adopt the scheme described in the background art.
  • FIG. 1 is a schematic structural diagram of an LED chip provided by an exemplary embodiment of the present application.
  • the LED chip 1 provided by the present application may be an ordinary LED chip or a Micro-LED chip.
  • the LED chip 1 provided by the present application may be a vertical type structure (ie, the anode and cathode of the LED chip 1 are located on opposite sides of the LED chip 1 respectively), or may be a horizontal type structure (ie, the anode and cathode of the LED chip 1 On the same side of the LED chip 1).
  • the LED chip 1 provided by the present application includes a chip body 10 and a magnetic member 12 disposed on the chip body 10, wherein the magnetic member 12 can be attracted under the action of a magnetic attraction force, thereby causing the LED chip 1 to be absorbed Adsorption.
  • the chip body 10 may include a structure commonly used in the art.
  • the chip body 10 may include a substrate and an epitaxial layer structure provided on the substrate.
  • An electrode eg, anode and/or cathode
  • the magnetic member 12 is located on the electrode, and can cover the above electrode by sputtering or deposition.
  • the material of the magnetic member 12 may be metal, preferably, it may be iron, cobalt, nickel or iron-nickel alloy. When the above materials are used, the magnetic member 12 is more easily attracted by the magnetic attraction force under the action of the external magnetic field.
  • the magnetic member 12 may also be the electrode itself. In this case, the electrode of the LED chip is a magnetic electrode.
  • the subsequent step of peeling off the magnetic member 12 may be omitted.
  • a peeling device eg, a laser peeling device, etc.
  • the LED chip 1 provided in this application further includes a sacrificial member 14 disposed between the magnetic member 12 and the chip body 10 To allow the magnetic member 12 to be peeled off the chip body 10 by a predetermined peeling means.
  • the magnetic member 12 and the sacrificial member 14 are arranged in a layer, and are stacked on the chip body 10, wherein the sacrificial member 14 is disposed on the surface of the chip body 10 close to the magnetic member 12.
  • the material of the sacrificial element 14 may be photoresist, or some similar materials to the chip body 10, such as silicon-containing materials.
  • the sacrificial member 14 can be removed by peeling means such as laser peeling, thereby separating the magnetic member 12 from the chip body 10.
  • the magnetic member 12 and the sacrificial member 14 may be other structures; for example, the sacrificial member 14 may be a layer, and the magnetic member 12 may be a plurality of magnetic blocks on the sacrificial member 14; or, the magnetic member 14 It may be magnetic particles doped in the sacrificial member 14 or the like.
  • FIG. 2 is a schematic structural diagram of an assembly device of a display panel provided by an exemplary embodiment of the present application.
  • the assembly equipment provided by the present application includes a transfer device 2 for transferring a plurality of LED chips 1 in any of the above embodiments to a receiving substrate, wherein the transfer device 2 includes a transfer substrate 20, a plurality of transfer heads 22 and Control assembly 24.
  • the plurality of transfer heads 22 are fixed to at least one surface of the transfer substrate 20 in an array.
  • the control component 24 is used to respectively control the plurality of transfer heads 22 to generate a magnetic attraction force that can act on the magnetic member 12 of the corresponding LED chip 1 or to release the magnetic attraction force, so that each transfer head 22 can separately adsorb or release the LED chip 1 .
  • the area of the orthographic projection of one transfer head 22 on the transfer substrate 20 is equal to the area of the orthographic projection of one LED chip 1 on the transfer substrate 20, and one LED chip 1 can be attracted or released by one transfer head 22 .
  • the area corresponding to at least two transfer heads 22 is equal to the area corresponding to one LED chip 1, and one LED chip 1 can be attracted or released by at least two transfer heads 22.
  • the transfer head 22 includes a coil 220 that includes a first end A and a second end B that extend.
  • the control assembly 24 is electrically connected to the first end A and the second end B.
  • the control component 24 controls the coil 220 to generate or remove the magnetic attraction force.
  • the structure of the coil 220 can be a planar coil, a chip coil, a thin film coil, etc.
  • the material of the coil 220 can be copper, silver, etc.
  • the number of turns of the coil 220 and the amount of current passing through the coil 220 can be set according to actual conditions. The application is not limited.
  • the transfer head 22 further includes a convex post 222 fixed to at least one surface of the transfer substrate 20, and a coil 220 is surrounded around the convex post 222.
  • the coil 220 may be wound on the outer surface of the convex post 222 in a spiral manner, and both the first end A and the second end B of the coil 220 protruding may be disposed toward the transfer substrate 20.
  • the coil 220 passes current, the coil 220 induces an N-pole or S-pole magnetic field on the side away from the transfer substrate 20. Since the material of the magnetic member 12 on the LED chip 1 is metal, the coil 220 further generates a magnetic attraction force to the magnetic member 12.
  • the material of the protrusion 220 may be designed as metal, preferably, the material of the protrusion 220 is iron.
  • the strength of the magnetic field generated by the coil 220 can be enhanced to generate a stronger magnetic attraction force to the magnetic member 12.
  • the coil 220 and the protrusion 222 may be designed in other ways. For example, the coil 220 is fixed to the end surface of the protrusion 222 away from the transfer substrate 20.
  • control assembly 24 may be wholly or partially located in the transfer substrate 20; for the control assembly 24 to independently control each transfer head 22, please refer to FIG. 3, which is an example of FIG. 2.
  • FIG. 3 is an example of FIG. 2.
  • a schematic structural diagram of a control component provided by the embodiment of the present disclosure, the control component 24 provided by the present application includes:
  • the current generating circuit 240 is used to supply current to the plurality of coils 220. One end of the current generating circuit 240 is connected to the first end A of the coil 220; the current generating circuit 240 may include a power supply, a resistor, etc. The magnitude of the current flowing through the coil 220 can be adjusted.
  • a plurality of switches 242, one switch 242 is correspondingly connected to one coil 220, and the switch 242 may be various types of switches, for example, MEMS switches, N-type transistor switches, P-type transistor switches, and the like. Because the MEMS switch has the advantage of small size, it is more suitable for the assembly equipment provided by the present application.
  • the switch 242 includes a control terminal K1, a third terminal K2, and a fourth terminal K3.
  • the third terminal K2 is electrically connected to the other end of the current generating circuit 240, and the fourth terminal K3 is connected to the second end B of the coil 220;
  • the switch control circuit 244 is used to connect the control terminals K1 of the plurality of switches 242 respectively.
  • the switch control circuit 244 controls the connection and disconnection of the third terminal K2 and the fourth terminal K3 through the control terminal K1.
  • the LED chip 1 further includes a sacrificial member 14, the sacrificial member 14 is disposed between the magnetic member 12 and the chip body 10; the assembly equipment provided by the present application further includes peeling In the device (not shown in FIG. 2 ), the peeling device is used to act on the sacrificial member 14 between the chip body 10 and the magnetic member 12, and then peel off the magnetic member 12 from the chip body 10.
  • the peeling device may be a laser peeling device or the like.
  • the sacrificial member 14 may not be provided, and the peeling device may be directly applied to the magnetic member 12 to peel the magnetic member 12 from the chip body 10.
  • the LED chip 1 includes an electrode, and the magnetic member 12 is the electrode. When the magnetic member 12 is an electrode, the assembly equipment provided by the present application may not require a peeling device, and the subsequent step of peeling the magnetic member 12 may be omitted.
  • FIG. 4 is a schematic flowchart of a method of assembling a display panel provided by an exemplary embodiment of the present application.
  • FIG. 5 is an exemplary embodiment corresponding to steps S101-S104 in FIG. Provided is a schematic diagram of the structure.
  • the assembly method includes:
  • a donor substrate 3 is provided, and a plurality of LED chips 1 are provided on the donor substrate 3, wherein the LED chip 1 includes a chip body 10 and a magnetic member 12 provided on the chip body 10.
  • the chip body 10 may be formed on the donor substrate 3 first, and then the magnetic member 12 may be formed on the surface of the chip body 10.
  • the sacrificial member 14 may be formed on the surface of the chip body 10 and then sacrificed The member 14 forms a magnetic member 12 on the side away from the chip body 10.
  • S102 Control a plurality of transfer heads 22 to generate a magnetic attraction force, which acts on the magnetic member 12 of the corresponding LED chip 1, and the magnetic attraction force is greater than the bonding force between the LED chip 1 and the donor substrate 3, so that The chip 1 is separated from the donor substrate 3, wherein a plurality of transfer heads 22 are fixed to at least one surface of the transfer substrate 20 in an array.
  • the above step S102 specifically includes: the switch control circuit 244 in the control component 24 controls the plurality of switches 242 to be turned on, and the current output by the current generation circuit 240 flows corresponding to the plurality of switches 242
  • the coils 220 in the plurality of transfer heads 22 connected, and the coils 220 in the plurality of transfer heads 22 generate a magnetic attraction force to attract the plurality of LED chips 1 of the donor substrate 3.
  • the control assembly 24 controls the two switches 242 on the left in FIG. 5b to be turned on, and the transfer heads 22 (as shown in FIGS. 5b A and B) corresponding to the two switches 242 on the left generate a magnetic attraction force, thereby attracting The two LED chips 1 on the left on the corresponding donor substrate 3 (as indicated by a and b in FIG. 5b).
  • the position of the transfer substrate 20 can be moved by a robot arm or the like, and the transfer head 22 to which the LED chip 1 is attracted to the transfer substrate 20 can be aligned with a predetermined position on the receiving substrate 4.
  • the receiving substrate 4 may be an array substrate or an intermediate substrate.
  • S104 Control the plurality of transfer heads 22 to remove the magnetic attraction force, so that the plurality of transfer heads 22 release the plurality of LED chips 1 to the receiving substrate 4.
  • the switch control circuit 244 in the control assembly 24 controls the plurality of switches 242 to be turned off, and the coil 220 in the plurality of transfer heads 22 corresponding to the plurality of switches 242 flows without current.
  • the coil 220 in the transfer head 22 removes the magnetic attraction force to release the plurality of LED chips 1 to the receiving substrate 4.
  • the control component 24 controls the left switch 242 in FIG. 5d to turn off, and the transfer head 22 (as marked A in FIG. 5d) corresponding to the left switch 242 releases the magnetic attraction force, and then the LED chip 1 (as marked a in FIG. 5d) is released to the receiving substrate 4.
  • the performance test of the LED chip 1 fails. Or because the position is not aligned with the predetermined position on the receiving substrate 4, the control assembly 24 controls the transfer head 22 (as marked B in FIG. 5d) not to release it.
  • the assembly method provided by the present application further includes: removing the magnetic member 12 on the LED chip 1 to expose the chip body 10.
  • the sacrificial member 14 between the chip body 10 and the magnetic member 12 in the LED chip 1, and the sacrificial member 14 is peeled by a peeling device such as laser peeling, thereby achieving The purpose of separating the piece 12 from the chip body 10.
  • the relative position of the LED chip 1 and the receiving substrate 4 may also be fixed, for example, the receiving substrate 4.
  • the chip body of the LED chip provided by the present application is provided with a magnetic member, which can be adsorbed under the action of the magnetic adsorption force generated by the external transfer device, thereby causing the LED chip to be adsorbed; and the traditional machine Compared with grasping LED chips, magnetic adsorption can reduce the damage to the LED chips, and magnetic adsorption is more convenient. Therefore, the efficiency of setting multiple LED chips in the display panel can be improved.
  • the transfer device in the display panel assembly device includes a plurality of transfer heads and a control assembly.
  • the control assembly can individually control the generation of each transfer head or release the magnetic member that can act on the corresponding LED chip Magnetic adsorption force, so that each transfer head can separately absorb or release LED chips, so that selective transfer of multiple LED chips can be achieved, thereby improving the efficiency of setting multiple LED chips in the display panel.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

一种LED芯片（1）、显示面板的组装设备及组装方法。LED芯片（1）包括芯片主体（10）以及设置于芯片主体（10）上的磁性件（12），磁性件（12）能在磁性吸附力的作用下被吸附。芯片主体（10）包括衬底以及设置于衬底上的外延层结构，磁性件（12）位于所述外延层结构远离所述衬底一侧。

Description

一种LED芯片、显示面板的组装设备及组装方法 技术领域
本申请涉及显示技术，特别是涉及LED芯片、显示面板的组装设备及组装方法。
背景技术
随着技术的发展，大部分显示面板需要在组装过程中设置多个器件,例如，多个LED芯片。设置多个LED芯片的方法可以包括：利用机械装置逐个抓取LED芯片，并逐个将LED芯片放置于接收基板中的预定位置。
发明内容
本申请提供一种LED芯片、显示面板的组装设备及组装方法。
本申请提供的LED芯片包括芯片主体以及设置于所述芯片主体上的磁性件。所述磁性件能在磁性吸附力的作用下被吸附；所述芯片主体包括衬底以及设置于所述衬底上的外延层结构，所述磁性件位于所述外延层结构远离所述衬底一侧。
本申请还提供一种显示面板的组装设备。所述组装设备包括转移装置，用于将LED芯片移转至接收基板。所述LED芯片包括芯片主体以及设置于所述芯片主体上的磁性件；所述转移装置包括：转移基板；多个转移头，所述多个转移头以阵列方式固定于所述转移基板的至少一侧表面，所述LED芯片与至少一个所述转移头相对应；控制组件，用于分别控制每个所述转移头产生磁性吸附力或者解除所述磁性吸附力，以吸附或者释放所述LED芯片。
本申请还提供一种显示面板的组装方法。所述组装方法包括：提供施主基板，所述施主基板上设置有多个LED芯片，其中，所述LED芯片包括芯片主体以及设置于所述芯片主体上的磁性件；控制多个转移头产生磁性吸附力，所述磁性吸附力作用于对应的所述LED芯片的所述磁性件，所述磁性吸附力大于所述LED芯片与所述施主基板之间的结合力，以将多个所述LED芯片从所述施主基板吸附，其中，多个所述转移头以阵列方式固定于转移基板的至少一侧表面；将所述转移基板移动至接收基板上方；控制多个转移头去除磁性吸附力，以使得多个所述转移头将多个所述LED芯片释放至接收基板。
一方面，本申请所提供的LED芯片的芯片主体上设置有磁性件，该磁性件能够在外部转移装置所产生的磁性吸附力的作用下被吸附，进而使得LED芯片被吸附；与传统的机械抓取LED芯片相比，磁力吸附可以降低对LED芯片的损伤，且磁力吸附更为方便，因此，可以提高在显示面板中设置多个LED芯片的效率。
另一方面，本申请所提供的显示面板的组装设备中的转移装置包括多个转移头和控制组件，控制组件能够单独控制每个转移头产生或者解除能够作用于对应的LED芯片的磁性件的磁性吸附力，以使得每一个转移头能够分别吸附或者释放LED芯片，从而可以实现对多个LED芯片进行选择性转移，进而提高在显示面板中设置多个LED芯片的效率。
【附图说明】
为了更清楚地说明本申请示例性的实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图，其中：
图1为本申请一示例性的实施例所提供的LED芯片的结构示意图；
图2为本申请一示例性的实施例所提供的显示面板的组装设备的结构示意图；
图3为图2中一示例性的实施例所提供的控制组件的结构示意图；
图4为本申请一示例性的实施例所提供的显示面板的组装方法的流程示意图；
图5为图4中步骤S101-步骤S104对应的一示例性的实施例所提供的结构示意图。
【具体实施方式】
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性的劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
本申请的发明人在长期研究过程中发现，由于显示面板中需要设置的LED 芯片的数量较多，采用如背景技术中描述的方案需要耗费大量的时间，并且效率较低。
请参阅图1，图1为本申请一示例性的实施例所提供的LED芯片的结构示意图。本申请所提供的LED芯片1可以是普通LED芯片，也可以是Micro-LED芯片。本申请所提供的LED芯片1可以是垂直型结构(即，LED芯片1的阳极和阴极分别位于LED芯片1的相对两侧)，也可以是横向型结构(即，LED芯片1的阳极和阴极位于LED芯片1的同一侧)。
具体而言，本申请所提供的LED芯片1包括芯片主体10以及设置于芯片主体10上的磁性件12，其中，磁性件12能在磁性吸附力的作用下被吸附，进而使得LED芯片1被吸附。在本实施例中，芯片主体10可以包括本领域常用的结构。例如，芯片主体10可以包括衬底、设置于衬底上的外延层结构。外延层结构上还可以设置电极(例如，阳极和/或阴极)。磁性件12位于电极上，可以通过溅射或者沉积等方式覆盖上述电极。磁性件12的材质可以是金属，优选地，可以是铁、钴、镍或铁镍合金。采用上述材质时，在外部磁场的作用下，磁性件12更容易被磁性吸附力所吸附。当然，在其他实施例中，磁性件12也可以是电极本身，此时，LED芯片的电极为磁性电极。
在一个示例性的实施例中，当磁性件12为电极本身时，可以省略后续剥离磁性件12的步骤。当磁性件12不是电极时，为了方便后续去除磁性件12以将电极露出，可以采用剥离装置(例如，激光剥离装置等)直接剥离磁性件12。而为了进一步降低后续去除磁性件12时对LED芯片1的损伤，请再次参阅图1，本申请所提供的LED芯片1进一步包括牺牲件14，牺牲件14设置于磁性件12与芯片主体10之间，以允许通过预定的剥离手段将磁性件12从芯片主体10上剥离。在本实施例中，磁性件12和牺牲件14呈层状设置，且层叠设置于芯片主体10上，其中牺牲件14设置于芯片主体10靠近磁性件12一侧的表面上。牺牲件14的材质可以是光刻胶、或者某些与芯片主体10的材料类似的材质，例如含硅的材料。牺牲件14可以通过激光剥离等剥离手段去除，进而使得磁性件12与芯片主体10分离。在其他实施例中，磁性件12和牺牲件14也可为其他结构；例如，牺牲件14可以为层状，磁性件12可以为位于牺牲件14上的多个磁性块；或者，磁性件14可以为掺杂在牺牲件14中的磁性颗粒等。
请参阅图2，图2为本申请一示例性的实施例所提供的显示面板的组装设 备的结构示意图。本申请所提供的组装设备包括转移装置2，用于将上述任一实施例中的多个LED芯片1移转至接收基板，其中，转移装置2包括：转移基板20、多个转移头22和控制组件24。
具体而言，多个转移头22以阵列方式固定于转移基板20的至少一侧表面。控制组件24用于分别控制多个转移头22产生能够作用于对应的LED芯片1的磁性件12的磁性吸附力或者解除磁性吸附力，以使得每一个转移头22能够分别吸附或者释放LED芯片1。在本实施例中，一个转移头22在转移基板20上的正投影的面积与一个LED芯片1在转移基板20上的正投影的面积相等，一个LED芯片1可以被一个转移头22吸附或者释放。在其他实施例中，至少两个转移头22对应的面积与一个LED芯片1对应的面积相等，一个LED芯片1可以被至少两个转移头22吸附或者释放。
在一个示例性的实施例中，转移头22包括线圈220，线圈220包括伸出的第一端A和第二端B。控制组件24与第一端A和第二端B电连接。控制组件24控制线圈220产生或者去除磁性吸附力。线圈220的结构可以是平面线圈、片式线圈、薄膜线圈等，线圈220的材质可以为铜、银等，线圈220的匝数、以及通过线圈220的电流大小可根据实际情况进行设定，本申请对此不作限定。
在另一个示例性的实施例中，转移头22还包括凸柱222，固定于转移基板20的至少一侧表面，且一个线圈220围设在一个凸柱222外围。例如，线圈220可以以螺旋的方式绕设在凸柱222的外表面，且线圈220伸出的第一端A和第二端B均可朝向转移基板20设置。当线圈220通过电流时，线圈220远离转移基板20一侧感应出N极或者S极磁场，由于LED芯片1上的磁性件12的材质为金属，线圈220进而对磁性件12产生磁性吸附力。当线圈220无电流通过时，线圈220无感应磁场，线圈220对磁性件12的磁性吸附力解除。为了加强线圈220产生的磁场强度，除了增加线圈220匝数、增大通过线圈220的电流外，还可以将凸柱220的材质设计为金属，优选地，凸柱220的材料为铁。当凸柱200的材质为铁时，可以增强线圈220产生的磁场强度，以对磁性件12产生更强的磁性吸附力。在其他实施例中，线圈220和凸柱222的设计方式也可为其他，例如，线圈220固定于凸柱222远离转移基板20的端部表面。
在又一个示例性的实施例中，控制组件24可以全部或者部分位于转移基板20中；为实现控制组件24独立控制每一个转移头22，请参阅图3，图3为 图2中一示例性的实施例所提供的控制组件的结构示意图，本申请所提供的控制组件24包括：
电流产生电路240，用于向多个线圈220提供电流，电流产生电路240的一端与线圈220的第一端A连接；电流产生电路240可以包括电源、电阻等，通过改变电源电压、电阻大小等可以调节流过线圈220的电流大小。
多个开关242，一个开关242对应连接一个线圈220，开关242可以为各种类型的开关，例如，MEMS开关、N型晶体管开关、P型晶体管开关等。由于MEMS开关具有体积小的优点，因此更适用于本申请所提供的组装设备。开关242包括控制端K1、第三端K2和第四端K3，第三端K2与电流产生电路240的另一端电连接，第四端K3与线圈220的第二端B连接；
开关控制电路244，用于分别连接多个开关242的控制端K1，开关控制电路244通过控制端K1控制第三端K2与第四端K3的连接与断开。
在又一个示例性的实施例中，请再次参阅图1，LED芯片1进一步包括牺牲件14，牺牲件14设置于磁性件12与芯片主体10之间；本申请所提供的组装设备进一步包括剥离装置(图2中未示)，剥离装置用于作用于芯片主体10与磁性件12之间的牺牲件14上，进而从芯片主体10上剥离磁性件12。剥离装置可以是激光剥离装置等。在其他实施例中，也可不设置牺牲件14，将剥离装置直接作用于磁性件12，以从芯片主体10上剥离磁性件12。又或者，LED芯片1包括电极，磁性件12为该电极。当磁性件12为电极时，本申请所提供的组装设备可无需剥离装置，且可以省略后续剥离磁性件12的步骤。
请参阅图4-图5，图4为本申请一示例性的实施例所提供的显示面板的组装方法的流程示意图，图5为图4中步骤S101-步骤S104对应的一示例性的实施例所提供的结构示意图，该组装方法包括：
S101：提供施主基板3，施主基板3上设置有多个LED芯片1，其中，LED芯片1包括芯片主体10以及设置于芯片主体10上的磁性件12。
具体地，如图5a所示。在一个示例性的实施例中，可以先在施主基板3上形成芯片主体10，然后在芯片主体10的表面形成磁性件12。
在另一个示例性的实施例中，为降低后期去除磁性件12时对芯片主体10产生损伤，在形成上述磁性件12之前，还可以先在芯片主体10的表面形成牺牲件14，然后在牺牲件14远离芯片主体10的一侧形成磁性件12。
S102：控制多个转移头22产生磁性吸附力，磁性吸附力作用于对应的 LED芯片1的磁性件12，磁性吸附力大于LED芯片1与施主基板3之间的结合力，以将多个LED芯片1与施主基板3分离，其中，多个转移头22以阵列方式固定于转移基板20的至少一侧表面。
具体地，在一个示例性的实施例中，上述步骤S102具体包括：控制组件24中的开关控制电路244控制多个开关242导通，电流产生电路240输出的电流流过与多个开关242对应连接的多个转移头22中的线圈220，多个转移头22中的线圈220产生磁性吸附力，吸附施主基板3的多个LED芯片1。如图5b中所示，控制组件24控制图5b中左边两个开关242导通，左边两个开关242对应的转移头22(如图5b中标注的A、B)产生磁性吸附力，进而吸附对应的施主基板3上的左边两个LED芯片1(如图5b中标注的a、b)。
S103：将转移基板20移动至接收基板4上方。
具体地，如图5c所示，可以利用机械臂等装置移动转移基板20的位置，并将转移基板20吸附有LED芯片1的转移头22与接收基板4上的预定位置对准。接收基板4可以是阵列基板，也可以是中间基板。
S104：控制多个转移头22去除磁性吸附力，以使得多个转移头22将多个LED芯片1释放至接收基板4。
具体地，如图5d所示，控制组件24中的开关控制电路244控制多个开关242断开，与多个开关242对应连接的多个转移头22中的线圈220无电流流过，多个转移头22中的线圈220去除磁性吸附力以将多个LED芯片1释放至接收基板4。例如，如图5d中所示，控制组件24控制图5d中左边一个开关242断开，左边一个开关242对应的转移头22(如图5d中标注的A)解除磁性吸附力，进而将LED芯片1(如图5d中标注的a)释放至接收基板4。而对于另一个转移头22(如图5d中标注的B)上的LED芯片1(如图5d中标注的b)，由于该LED芯片1(如图5d中标注的b)性能检测不通过、或者位置与接收基板4上的预定位置不对位等原因，控制组件24控制该转移头22(如图5d中标注的B)不对其进行释放。
在其他实施例中，上述步骤S104之后，本申请所提供的组装方法还包括：去除LED芯片1上的磁性件12，以暴露出芯片主体10。具体地，如图5e所示，在本实施例中，LED芯片1中的芯片主体10和磁性件12之间还有牺牲件14，通过激光剥离等剥离装置剥离牺牲件14，进而达到将磁性件12与芯片主体10分离的目的。另外，为避免去除磁性件12的过程中LED芯片1与接收 基板4发生相对位移，在去除磁性件12之前，还可以将LED芯片1与接收基板4的相对位置固定，例如，可以在接收基板4上涂覆一层焊料，通过热回流的方式将LED芯片1与接收基板4相对位置固定；又例如，可以在接收基板4上涂覆一层胶黏剂，利用胶黏剂的粘附性将LED芯片1与接收基板4相对位置固定。
一方面，本申请所提供的LED芯片的芯片主体上设置有磁性件，该磁性件能够在外部转移装置所产生的磁性吸附力的作用下被吸附，进而使得LED芯片被吸附；与传统的机械抓取LED芯片相比，磁力吸附可以降低对LED芯片的损伤，且磁力吸附更为方便，因此，可以提高在显示面板中设置多个LED芯片的效率。
另一方面，本申请所提供的显示面板的组装设备中的转移装置包括多个转移头和控制组件，控制组件能够单独控制每个转移头产生或者解除能够作用于对应的LED芯片的磁性件的磁性吸附力，以使得每一个转移头能够分别吸附或者释放LED芯片，从而可以实现对多个LED芯片进行选择性转移，进而提高在显示面板中设置多个LED芯片的效率。
以上仅为本申请示例性的实施例，并非因此限制本申请的专利范围，凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本申请的专利保护范围内。

Claims (20)

  1. 一种LED芯片，所述LED芯片包括芯片主体以及设置于所述芯片主体上的磁性件，所述磁性件能在磁性吸附力的作用下被吸附；所述芯片主体包括衬底以及设置于所述衬底上的外延层结构，所述磁性件位于所述外延层结构远离所述衬底一侧。
  2. 根据权利要求1所述的LED芯片，其中，所述LED芯片进一步包括牺牲件，所述牺牲件设置于所述磁性件与所述芯片主体之间，以便于将所述磁性件从所述芯片主体上剥离。
  3. 根据权利要求2所述的LED芯片，其中，所述磁性件和所述牺牲件呈层状设置，且层叠设置于所述芯片主体的表面上。
  4. 根据权利要求1所述的LED芯片，其中，所述LED芯片进一步包括牺牲件，所述牺牲件设置于所述芯片主体上，所述磁性件为掺杂在所述牺牲件中的磁性颗粒。
  5. 根据权利要求1所述的LED芯片，其中，所述磁性件的材质为铁、钴、镍、铁镍合金中至少一种。
  6. 根据权利要求1所述的LED芯片，其中，所述磁性件为磁性电极。
  7. 一种显示面板的组装设备，所述组装设备包括转移装置，用于将LED芯片移转至接收基板，所述LED芯片包括芯片主体以及设置于所述芯片主体上的磁性件；所述转移装置包括：
    转移基板；
    多个转移头，所述多个转移头以阵列方式固定于所述转移基板的至少一侧表面，所述LED芯片与至少一个所述转移头相对应；
    控制组件，用于分别控制每个所述转移头产生磁性吸附力或者解除所述磁性吸附力，以吸附或者释放所述LED芯片。
  8. 根据权利要求7所述的组装设备，其中，至少一个所述转移头在所述转移基板上的正投影的面积与一个所述LED芯片在所述转移基板上的正投影的面积相等，一个所述LED芯片被至少一个所述转移头吸附或者释放。
  9. 根据权利要求7所述的组装设备，其中，每个所述转移头包括线圈，所述线圈包括第一端和第二端，所述控制组件与所述第一端和所述第二端电连接，以控制所述线圈产生或者去除所述磁性吸附力。
  10. 根据权利要求9所述的组装设备，其中，每个所述转移头还包括一个 凸柱，所述凸柱设置于所述转移基板的至少一侧表面，每个凸柱外表面设有线圈。
  11. 根据权利要求10所述的组装设备，其中，所述线圈以螺旋的方式绕设在所述凸柱的外表面，且所述线圈的所述第一端和所述第二端朝向所述转移基板。
  12. 根据权利要求10所述的组装设备，其中，所述凸柱的材料为金属。
  13. 根据权利要求12所述的组装设备，其中，所述凸柱的材料为铁。
  14. 根据权利要求9所述的组装设备，其中，所述控制组件包括：
    电流产生电路，用于向多个所述线圈提供电流，所述电流产生电路的一端与所述线圈的所述第一端连接；
    多个开关，一个所述开关对应连接一个所述线圈，所述开关包括控制端、第三端和第四端，所述第三端与所述电流产生电路的另一端电连接，所述第四端与所述线圈的所述第二端连接；
    开关控制电路，用于分别连接多个所述开关的所述控制端，所述开关控制电路通过所述控制端控制所述第三端与所述第四端的连接与断开。
  15. 根据权利要求14所述的组装设备，其中，所述开关为MEMS开关、N型晶体管开关、P型晶体管开关中至少一种。
  16. 根据权利要求7所述的组装设备，其中，所述磁性件为磁性电极。
  17. 根据权利要求7所述的组装设备，其中，所述组装设备进一步包括剥离装置，所述剥离装置用于从所述芯片主体上剥离所述磁性件。
  18. 根据权利要求8所述的组装设备，其中，所述LED芯片进一步包括牺牲件，所述牺牲件设置于所述磁性件与所述芯片主体之间；所述剥离装置作用于所述牺牲件，进而从所述芯片主体上剥离所述磁性件。
  19. 一种显示面板的组装方法，其中，所述组装方法包括：
    提供施主基板，所述施主基板上设置有多个LED芯片，其中，所述LED芯片包括芯片主体以及设置于所述芯片主体上的磁性件；
    控制多个转移头产生磁性吸附力，所述磁性吸附力作用于对应的所述LED芯片的所述磁性件，所述磁性吸附力大于所述LED芯片与所述施主基板之间的结合力，以将多个所述LED芯片从所述施主基板吸附，其中，多个所述转移头以阵列方式固定于转移基板的至少一侧表面；
    将所述转移基板移动至接收基板上方；
    控制多个转移头去除磁性吸附力，以使得多个所述转移头将多个所述LED芯片释放至接收基板。
  20. 根据权利要求19所述的组装方法，其中，所述组装方法还包括：
    去除所述LED芯片上的所述磁性件，以暴露出所述芯片主体。
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