WO2018006755A1 - 表面贴石英晶体谐振器生产中的整板上片装置及方法 - Google Patents

表面贴石英晶体谐振器生产中的整板上片装置及方法 Download PDF

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Publication number
WO2018006755A1
WO2018006755A1 PCT/CN2017/091032 CN2017091032W WO2018006755A1 WO 2018006755 A1 WO2018006755 A1 WO 2018006755A1 CN 2017091032 W CN2017091032 W CN 2017091032W WO 2018006755 A1 WO2018006755 A1 WO 2018006755A1
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wafer
plate
full
whole
quartz crystal
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PCT/CN2017/091032
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English (en)
French (fr)
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黄屹
李斌
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烟台明德亨电子科技有限公司
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Publication of WO2018006755A1 publication Critical patent/WO2018006755A1/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz

Definitions

  • the invention belongs to the field of electronic components, and particularly relates to a device and a method for a whole plate in the production of a surface-attached quartz crystal resonator.
  • Quartz crystal resonator also known as quartz crystal, commonly known as crystal oscillator, is a resonant element made by utilizing the piezoelectric effect of quartz crystal. It can be used together with semiconductor devices and RC components to form a quartz crystal oscillator.
  • a quartz wafer hereinafter referred to as a wafer, which may be square, rectangular or circular, etc., is coated with a silver layer as an electrode on its two corresponding faces, and a surface-attached quartz crystal resonator is an electrode on a quartz wafer through a conductive paste.
  • the base is electrically connected, the primer is coated on the base to form a conductive adhesive under the quartz wafer, the quartz wafer is placed on the primer, and the secondary electrode on the quartz wafer is coated to form a conductive paste on the quartz wafer.
  • the CCD an image sensor, also called an image controller, is a semiconductor device that converts optical images into digital signals.
  • the CCD acts like a film, but it converts the light signal into a charge signal.
  • a production method in which a wafer is sucked one by one from a coating jig and then placed in a susceptor has been used.
  • the main process is: directly sucking the wafer from the coating fixture, moving to the CCD to detect and rotate the angle, and when the CCD identifies the wafer, it is mounted one by one in the base of the primer.
  • the single wafer is sucked one by one and placed for about 0.6s.
  • the whole board fixture 400pcs for example
  • the whole board fixture has a wafer time of 240s and the production efficiency is low.
  • the present invention provides a whole plate device and method for the production of a surface-attached quartz crystal resonator, which is used for processing a slab of a surface-attached quartz crystal resonator, and realizes the wafer directly from the coating fixture after coating.
  • the inner plate is displaced into the entire plate of the base.
  • the present invention provides a full-plate device in the production of a surface-attached quartz crystal resonator, which is characterized in that it comprises a fixing device, an adsorption device located inside the fixing device, and a movement detachably connected to the fixing device.
  • the apparatus is provided with a full-plate wafer for mounting on the entire substrate 1 on the moving device, the whole-plate wafer being formed by a plurality of wafers 4, the adsorption device being in contact with the entire wafer on the moving device.
  • the fixing device is a suction box 12, and the adsorption device comprises a metal rod 7 located on the upper surface of the suction box 12, a suction nozzle 13 at the top end of the metal rod 7, and a spring 9 sleeved on the metal rod 7.
  • the bottom end of the metal rod 7 is connected to the vacuum system, and the top end of the nozzle 13 is in one-to-one correspondence with the entire board in the mobile device.
  • the moving device is a coating jig 10, and the row-column spacing of each of the wafers 4 on the coating jig 10 is an integral multiple of the row-to-column spacing of the cell pedestals 1-1 in the susceptor.
  • the suction box 12 is further provided with a positioning device, wherein the positioning device is a plurality of positioning pins 8 disposed on the suction box, and the positioning pins 8 respectively correspond to the corresponding carrier positioning holes 1-2 on the whole plate of the base. .
  • the coating jig 10 is provided with a coating jig locating hole 11 which is aligned with the locating plate positioning hole 1-3 of the pedestal whole plate 1.
  • the invention provides a method for the whole plate in the production of a surface-attached quartz crystal resonator, which is special in that a plurality of wafers form a whole-plate wafer, and the whole-plate wafer is integrally moved so that a single sheet is directly under each wafer in the whole-plate wafer.
  • the body base corresponds to it.
  • moving the entire plate wafer integrally to the base plate includes the following steps:
  • Step 1 The whole plate wafer is entirely moved in a fixing device with an adsorption device, and the whole plate wafer is sucked by the adsorption device;
  • Step 2 pressing the adsorption device to make each wafer contact the primer on the left and right platforms of the corresponding unit base;
  • Step 3 Separating the adsorption device from the whole plate wafer, and the whole plate wafer is transferred on each of the unit bases in the whole plate of the base.
  • step 1 the entire wafer is moved over the adsorption device in the fixture by the mobile device as a whole.
  • the mobile device is installed in the fixture by electrical means or manual operation in step 1.
  • the mobile device is a coating fixture, and the manufacturing condition thereof satisfies the following conditions:
  • the coating fixture is the same size as the base plate
  • the row-to-column spacing of each wafer on the coating fixture is an integer multiple of the row-to-column spacing of the unitary pedestals in the entire substrate;
  • the positioning holes on the coating fixture are aligned with the positioning holes on the base plate.
  • step 2 before the adsorption device is depressed, the adsorption device in the fixing device is located above the whole plate wafer, and the lower portion of each wafer in the whole plate wafer corresponds to the position of the corresponding single base in the whole plate of the base plate. .
  • the fixing device produced in the step 1 is a suction box
  • the adsorption device is a suction nozzle located in the suction box, and the lower end of the suction box is connected with the vacuum system, and the suction nozzle inside the suction box and the whole plate wafer in the moving device are one by one.
  • the positioning device on the suction box is aligned with the positioning hole of the whole plate carrier of the base.
  • step 2 the suction box is moved by an electrical device or a manual operation so that the whole plate wafer is located at the base plate.
  • the present invention is advantageous in that the present invention adopts a whole board to transfer a plurality of wafer processes, and forms a plurality of wafers on a coating jig to form a whole plate wafer, and the whole plate wafer is placed on the suction plate by a coating jig.
  • the inside of the box is fixed, and each nozzle has a wafer.
  • the whole wafer is placed on the base plate with the primer, which can shorten the time for placing a large number of wafers, improve the patch speed, and improve the production efficiency. Tens to hundreds of times, while expanding the production of patch.
  • Figure 1 is a schematic view of a whole plate of the base of the present invention
  • Figure 2 is a schematic view of a monomer base of the present invention
  • Figure 3 is a schematic view showing the state of the monomer base of the present invention after being sprayed;
  • FIG. 4 is a schematic structural view of a suction box for sucking a wafer according to the present invention.
  • Figure 5 is a schematic structural view of a portion of the suction box of the present invention.
  • Figure 6 is a schematic view showing the structure of a coating jig of the present invention.
  • Marking instructions 1, base plate, 1-1, single base, 1-2, carrier positioning hole, 1-3, base plate positioning hole, 2, left platform, 3, right platform, 4 , wafer, 5, secondary electrode, 6, primer, 7, metal rod, 8, positioning needle, 9, spring, 10, coating fixture, 11, coating fixture positioning hole, 12, suction box, 13, nozzle.
  • the wafer in the present invention is a quartz crystal resonator.
  • the specific form of the susceptor whole plate in the present invention is: processed into a matrix row on the ceramic slab.
  • the structural unit to which the cloth is attached, each of which serves as a separate unit base, and the ceramic large plate thus formed serves as the base plate of the present invention.
  • the specific form of the whole-plate wafer of the present invention is that a plurality of wafers arranged in a matrix are formed on the coating jig to form a whole-plate wafer, each structural unit as a separate wafer, thereby forming the whole-plate wafer of the present invention.
  • the method for processing the whole plate on the surface-attached quartz crystal resonator is provided, which is an improvement on the upper-stage stage of the surface-attached quartz crystal resonator production, and other steps in the production, such as coating the primer.
  • the process is not described in detail, and is only used to assist the process of the present invention.
  • the base plate is a single base connected by M*N matrix, the initial values of M and N are all 1, M and N are non-zero natural numbers, M is the number of rows and M
  • the maximum value is the number of rows of the matrix
  • N is the number of columns
  • the maximum value of N is the number of columns of the matrix, that is, 1 ⁇ M ⁇ the number of rows, 1 ⁇ N ⁇ the number of columns, for each monomer base on the entire plate of the susceptor
  • the seat is represented by a MN
  • a MN is a single base located in the Nth column of the Mth row of the base plate.
  • the coating device used in the mobile device uses a suction box with a suction nozzle.
  • the fixing device is not limited to the suction box, as long as it is equipped with a plurality of suction nozzles inside the fixing device, the vacuum system is not shown in the figure, and is located inside the suction box, and the specific installation position is not limited, as long as the nozzle can be controlled. Adsorption between the wafers is sufficient.
  • the vacuum system can be located either inside the suction box as part of the suction box or as a separate structure outside the suction box.
  • the whole plate wafer on the coating jig is a P*Q matrix
  • P is the number of rows and the maximum value of P is the number of rows of the matrix
  • Q is the number of columns and the maximum value of Q is the number of columns of the matrix, that is, 1 ⁇ P ⁇ the number of rows , 1 ⁇ Q ⁇ the number of columns
  • a PQ expression is used for each wafer on the entire wafer
  • a PQ is each wafer located in the Qth column of the P row of the coating jig.
  • the coating jig in the present invention satisfies the following conditions:
  • the coating fixture is required to be the same size as the base plate
  • the row-column spacing of the coating fixture is an integer multiple of the row-to-column spacing of the entire substrate, that is, P is an integer multiple of M, and Q is an integer multiple of N.
  • the coating fixture has a multi-layer structure, and a layer of magnetic sheets is disposed between each two rows of the layer above the wafer layer of the coating fixture. The number of magnetic sheets is the same as the number of each wafer in the row, and each of the magnetic sheets corresponds to each. a wafer, each of which can be fixed on a coating jig to form a whole wafer;
  • the positioning hole of the coating fixture is consistent with the positioning hole of the whole plate of the base.
  • the suction box of the fixing jig of the invention satisfies the following conditions
  • the lower end of the suction box is connected to the vacuum system, and can be flipped by 180° through the electrical device;
  • the suction nozzle inside the suction box has a one-to-one correspondence with the wafer inside the coating fixture;
  • the positioning device on the suction box is consistent with the positioning hole of the whole plate carrier of the base.
  • the four corners of the upper surface of the suction box are provided with positioning means, and metal rods are uniformly arranged in the area between the positioning means, and the metal rod penetrates the upper surface of the suction box, above the upper surface of the suction box,
  • the top of each metal rod is provided with a suction nozzle.
  • each metal rod is sleeved with a spring and fixed in the suction box, and a vacuum system is arranged at the bottom end of the metal rod.
  • the positioning device is a plurality of positioning pins disposed on the suction box, and the positioning pins respectively correspond to the corresponding positioning holes of the carrier of the base plate, so that when the suction nozzle of the suction box is located above the wafer, the positioning pin and the loading pin The disc positioning holes are fastened to fix the suction box to the base plate.
  • the carrier positioning hole P1 there are four carrier positioning holes on both sides of the carrier plate of the base plate, specifically, the carrier positioning hole P1, the carrier positioning hole P2, the carrier positioning hole P3, and the carrier positioning hole P4, which are symmetrically distributed.
  • the carrier positioning hole P1 On both sides of the carrier, it is used to engage with the four positioning pins of the suction box.
  • the coating jig is provided with a coating fixture positioning hole which is consistent with the positioning hole of the base plate of the whole plate of the base, and is fixed by the suction box When the base plate is fixed, the positioning of the positioning hole of the base plate and the positioning hole of the coating fixture can ensure the stability of the coating fixture, and facilitate each wafer to correspond to its corresponding single base.
  • Step 1 Place the prepared base plate into the pedestal cage to wait for the primer to be applied;
  • Step 2 adjusting the glue spraying time and the glue spraying position according to the position of the glue point
  • Step 3 Apply a primer to the left and right platforms of each of the unit bases in the whole plate of the base.
  • the row of the whole wafer on the coating jig is the same as the row and the row of the whole plate of the pedestal, that is, after the coating of the entire single pedestal on the pedestal of the pedestal is completed, all the monomers are
  • the whole plate wafer is a P*Q matrix
  • Step 1 Place the whole wafer placed in the coating fixture into the wafer cage, the number of each wafer on the whole wafer, the number of nozzles in the suction box, and the number of single bases on the whole substrate base. be consistent;
  • Step 2 The coating jig with the whole plate wafer is installed in the suction box by the robot, the vacuum system is opened, and the wafer is sucked through the suction nozzle in the suction box, and the nozzle at the top of each metal rod in the suction box corresponds to the coating fixture. For each wafer, remove the upper electrode cover of the upper coating fixture;
  • Step 3 The manipulator is turned over by the robot, and the suction box is overlapped with the whole plate of the base by the positioning needle, and the coating fixture is overlapped with the whole plate of the base; thus, each wafer and the single base in the whole plate of the base are one by one. correspond;
  • Step 4 pressing the nozzles so that each wafer contacts the bottom glue of the left and right platforms of the corresponding unit base;
  • Step 5 After the vacuum is broken, each nozzle loses suction force to each wafer, and the suction box and the coating fixture leave the carrier of the whole substrate, and the whole wafer is transferred to each single sheet in the whole substrate of the base. On the body base.
  • the coating jig is installed in the suction box, and the flip suction box is realized by an electric device, specifically using a robot.
  • the process of moving the whole plate wafer on the coating jig to the pedestal whole plate is similar to that of Embodiment 1, except that the whole plate wafer on the coating jig in this embodiment is listed as the pedestal whole plate.
  • the single base of the odd-numbered rows or even-numbered rows on the entire plate of the base is the same
  • the filming process is performed.
  • the single pedestal on the odd-numbered rows of the odd-numbered rows on the pedestal of the pedestal is selected, and then the singular pedestals on the even-numbered rows of the even-numbered rows on the pedestal of the pedestal are selected.
  • the specific filming process is as follows:
  • Step 1 Place the whole wafer placed in the coating fixture into the wafer cage.
  • the number of each wafer on the whole wafer, the number of nozzles in the suction box are the same, and each wafer and the whole substrate are on the base.
  • the number of odd-numbered rows of single-cell pedestals remains the same;
  • Step 2 The coating jig with the whole plate wafer is mounted in the suction box by the robot, and the wafer is sucked through the suction nozzle in the suction box, and the nozzle at the top of each metal rod in the suction box corresponds to each wafer on the coating fixture. , peeling off the upper electrode of the coating fixture;
  • Step 3 The manipulator is turned over by the robot, and the suction box is overlapped with the whole plate of the base by the positioning needle, and the coating fixture is overlapped with the whole plate of the base; thus, each wafer and the single base in the whole plate of the base are one by one. correspond;
  • Step 4 pressing the nozzles so that each wafer contacts the bottom glue of the left and right platforms of the corresponding unit base;
  • Step 5 After the vacuum is broken, each nozzle loses suction force to each wafer, and the suction box and the coating fixture leave the carrier plate of the whole substrate, and the whole wafer is transferred in the whole plate of the base in an odd number of odd rows.
  • the suction box and the coating fixture leave the carrier plate of the whole substrate, and the whole wafer is transferred in the whole plate of the base in an odd number of odd rows.
  • Step 6 Return to step 1 and place the entire wafer on the coating fixture again. Repeat steps 1 to 5.
  • this step after the suction box is turned over, each wafer on the coating fixture and the entire substrate are evenly numbered. The unit bases of the even-numbered rows correspond.
  • the process of moving the entire plate wafer on the coating jig to the base plate is similar to that of Embodiment 1, except that in the present embodiment, the coating jig is installed in the suction box, and the flip box is flipped. Both are achieved manually.
  • the whole wafer row on the coating jig is three times the row-to-column spacing of the whole substrate
  • the P*Q matrix is the whole plate on the coating jig
  • the M*N matrix is on the whole plate of the pedestal.
  • P 3M
  • the first, fourth, seventh, and tenth rows of the pedestal, and the single pedestal of the first, fourth, seventh, and tenth rows are selected.
  • the upper piece is then placed on the second, fifth, eighth, and eleventh rows of the base plate, and the single bases on the second, fifth, eighth, and eleventh rows are integrally wound, and finally the third and sixth plates of the base plate are finally In the 9th and 12th rows, the unit bases on the 3rd, 6th, 9th and 12th columns are integrally wound.
  • Step 1 Place the whole wafer placed in the coating fixture into the wafer cage.
  • the number of each wafer on the whole wafer, the number of nozzles in the suction box are the same, and each wafer and the whole substrate are on the base.
  • rows 1, 4, 7, and 10 the number of unit pedestals in columns 1, 4, 7, and 10 remains the same;
  • Step 2 Manually mounting the coating fixture with the whole wafer in the suction box, sucking the wafer through the suction nozzle in the suction box, and the nozzle at the top of each metal rod in the suction box corresponds to each wafer on the coating fixture. Removing the upper electrode of the upper coating fixture;
  • Step 3 manually flipping the suction box, and the positioning box is used to make the suction box and the whole plate of the base overlap, and the coating fixture is coincident with the whole plate of the base; thus, the first, fourth, seventh, and tenth of each wafer and the base are completed. Rows, the unit bases of the first, fourth, seventh, and tenth columns are in one-to-one correspondence;
  • Step 4 pressing the nozzles so that each wafer contacts the bottom glue of the left and right platforms of the corresponding unit base;
  • Step 5 After the vacuum is broken, each nozzle loses suction force to each wafer, and the suction box and the coating fixture leave the carrier plate of the whole substrate, and the whole wafer is transferred in the whole plate of the base 1 and 4 , 7, 10 rows, on each of the single pedestals of columns 1, 4, 7, and 10;
  • Step 6 Return to step 1 and place the entire wafer on the coating fixture again. Repeat steps 1 to 5. In this step, after the suction box is turned over, each wafer on the coating fixture and the entire substrate are 2, 5, 8, 11 rows, the unit bases of the 2nd, 5th, 8th, and 11th columns correspond.
  • Step 7 Return to step 1, and place the entire wafer on the coating fixture again. Repeat steps 1 to 5. In this step, after the suction box is turned over, each wafer on the coating fixture and the entire substrate are Lines 3, 6, 9, and 12 correspond to the unit bases of columns 3, 6, 9, and 12.
  • the above embodiment only lists the order of several integral sheets of the present invention.
  • the present invention mainly realizes the whole board moving process for the upper sheet of the whole board base, and the row-column spacing of the coating jig is the row-column spacing of the whole board of the base. Integer multiples are different top-of-the-line orders, and more top-level sequences can be transformed according to the row-column spacing.

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Abstract

表面贴石英晶体谐振器生产中的整板上片装置及方法，属于电子元器件领域。整板上片装置包括固定装置、位于固定装置内部的吸附装置、与固定装置可拆卸连接的移动装置，在移动装置上设置有用于贴装在基座整板（1）上的整板晶片，所述整板晶片由多个晶片形成，所述吸附装置与移动装置上的整板晶片相接触。整板上片方法为，整体移动多个晶片形成整板晶片，使得整板晶片中每个晶片正下方都有一个单体基座与之对应。利用镀膜夹具（10）整体吸取晶片，整体放置在点胶后的基座整板（1）上，这样可以缩短放置晶片的时间，贴片速度快，提高生产效率几十至上百倍，同时扩大生产量。

Description

表面贴石英晶体谐振器生产中的整板上片装置及方法 技术领域
本发明属于电子元器件领域，尤其涉及表面贴石英晶体谐振器生产中整板上片装置及方法。
背景技术
石英晶体谐振器又称为石英晶体，俗称晶振，是利用石英晶体的压电效应而制成的谐振元，与半导体器件和阻容元件一起使用,便可构成石英晶体振荡器。
石英晶片，以下简称为晶片，它可以是正方形、矩形或圆形等，在它的两个对应面上涂敷银层作为电极，表面贴石英晶体谐振器是通过导电胶将石英晶片上的电极和基座进行电连接，在基座上涂底胶，形成石英晶片下方导电胶，将石英晶片方在底胶上方，并且石英晶片上的副电极涂上胶，形成石英晶片上方导电胶。
CCD作为图像传感器，也叫图像控制器，是一种半导体器件，能够把光学影像转化为数字信号。一块CCD上包含的像素数越多，其提供的画面分辨率也就越高。CCD的作用就像胶片一样，但它是把光信号转换成电荷信号。CCD上有许多排列整齐的光电二极管，能感应光线，并将光信号转变成电信号，经外部采样放大及模数转换电路转换成数字图像信号。
对于将石英晶片固定在基座上，目前一直采用从镀膜夹具中逐一吸取晶片再放置在基座内的生产方法。主要工艺为：直接从镀膜夹具中逐一吸取晶片，移至CCD检测并旋转角度，当CCD识别晶片合格后，逐一搭载在点好底胶的基座内。
但是，目前这种逐一吸取晶片工艺存在以下问题：
1、单只晶片逐一吸取、放置时间约0.6s，移载整板夹具(以400pcs为例)晶片时间为240s，生产效率低。
2、由于生产效率低流转缓慢，镀膜夹具需要量大。
发明内容
针对现有技术的不足，本发明提供表面贴石英晶体谐振器生产中的整板上片装置及方法，用于表面贴石英晶体谐振器的基座整板加工，实现镀膜后晶片直接从镀膜夹具内整板移置到基座整板内。
为解决上述技术问题，本发明提供的表面贴石英晶体谐振器生产中整板上片装置，其特殊之处在于：包括固定装置、位于固定装置内部的吸附装置、与固定装置可拆卸连接的移动装置，在移动装置上设置有用于贴装在基座整板1上的整板晶片，所述整板晶片由多个晶片4形成，所述吸附装置与移动装置上的整板晶片相接触。
进一步地，所述固定装置为吸盒12，所述吸附装置包括位于贯穿吸盒12上表面的金属棒7、位于金属棒7顶端的吸嘴13、套设在金属棒7上的弹簧9，金属棒7底端与真空系统连接，吸嘴13顶端与移动装置内的整板晶片一一对应。
进一步地，所述移动装置为镀膜夹具10，镀膜夹具10上每个晶片4的行列间距是基座整板1中单体基座1-1的行列间距整数倍。
进一步地，吸盒12上还设置有定位装置，所述定位装置为设置在吸盒上的多个定位针8，定位针8分别与基座整板上相应的载盘定位孔1-2对应。
进一步地，所述镀膜夹具10上设置有与基座整板1上的基座整板定位孔1-3一致的镀膜夹具定位孔11。
本发明提供表面贴石英晶体谐振器生产中整板上片方法，其特殊之处在于：多个晶片形成整板晶片，整体移动整板晶片使得整板晶片中每个晶片正下方都有一个单体基座与之对应。
进一步地，整体移动整板晶片至基座整板上，包括以下步骤：
步骤1、将整板晶片整体移动在带有吸附装置的固定装置内，通过吸附装置吸住整板晶片；
步骤2、下压吸附装置，使每个晶片接触其对应的单体基座左右平台上的底胶；
步骤3、分离吸附装置与整板晶片，整板晶片移载在基座整板内的每个单体基座上。
进一步地，在步骤1中整板晶片是通过移动装置整体移动在固定装置内的吸附装置上方。
进一步地，在步骤1中通过电气装置或人工操作将移动装置安装在固定装置内。
进一步地，所述移动装置为镀膜夹具，其制作满足以下条件：
镀膜夹具与基座整板尺寸一致；
镀膜夹具上每个晶片的行列间距是基座整板中单体基座的行列间距整数倍；
镀膜夹具上的定位孔与基座整板上的定位孔一致。
进一步地，在步骤2中，下压吸附装置前，将固定装置中的吸附装置位于整板晶片的上方，整板晶片中每个晶片的下方对应基座整板中相应单体基座的位置。
进一步地，在步骤1中制作的固定装置为吸盒，吸附装置为位于吸盒内的吸嘴，吸盒下端与真空系统连接，吸盒内部的吸嘴与移动装置内的整板晶片一一对应，吸盒上的定位装置与基座整板载盘的定位孔一致。
进一步地，在步骤2中通过电气装置或人工操作移动吸盒，使得整板晶片位于基座整板 上方。
本发明与现有技术相比，其有益之处在于：本发明采用整板移载多个晶片工艺，将多个晶片在镀膜夹具上形成整板晶片，通过镀膜夹具将整板晶片放置在吸盒内固定，每个吸嘴对应有一个晶片，通过翻转，将整板晶片放置在带有底胶的基座整板上，这样可以缩短放置大量晶片的时间，提高贴片速度，生产效率提高几十至上百倍，同时扩大贴片生产量。
附图说明
图1是本发明基座整板示意图；
图2是本发明单体基座示意图；
图3是本发明单体基座喷胶后状态示意图；
图4是本发明吸取晶片的吸盒结构示意图；
图5是本发明吸盒部分结构示意图；
图6是本发明镀膜夹具结构示意图。
标记说明：1、基座整板，1-1、单体基座，1-2、载盘定位孔，1-3、基座整板定位孔，2、左平台，3、右平台，4、晶片，5、副电极，6、底胶，7、金属棒，8、定位针，9、弹簧，10、镀膜夹具，11、镀膜夹具定位孔，12、吸盒，13、吸嘴。
具体实施方式
以下参照附图1至附图6，给出本发明的具体实施方式，用来对本发明做进一步说明。
本发明中的晶片就是石英晶体谐振器，关于用于表面贴石英晶体谐振器的基座整板，在本发明中基座整板的具体形式为：在陶瓷大板上通过加工成按矩阵排布连接的结构单元，每个结构单元作为一个独立的单体基座，由此形成的陶瓷大板作为本发明的基座整板。
在本发明的整板晶片的具体形式为：在镀膜夹具上按照矩阵排布的多个晶片形成整板晶片，每个结构单元作为一个独立的每个晶片，由此形成本发明的整板晶片。
在本实施例中提供表面贴石英晶体谐振器生产中整板上片工艺方法，是对表面贴石英晶体谐振器生产中上片阶段的改进，对于生产中的其他步骤，如涂布底胶的工艺，不再详细展开描述，仅用来对本发明的工艺进行辅助说明。
在本发明中基座整板上是按M*N矩阵排布连接的单体基座，M、N的初始值均为1，M、N均为非零自然数，M为行数且M的最大值为矩阵的行数，N为列数且N的最大值为矩阵的列数，即1≤M≤行数，1≤N≤列数，对于基座整板上的每个单体基座采用aMN表达，aMN是位于基座整板第M行第N列的单体基座。
在本发明中移动装置采用的镀膜夹具，固定装置采用带有吸嘴的吸盒，为便于移动整板晶片至固定装置内，也可采用其它类型的装置，或者手动移动。固定装置不局限于吸盒，只要在固定装置内部只要配有多个吸嘴就可以，真空系统在图中未示出，位于吸盒内部，具体安装位置不受限制，只要能控制吸嘴与晶片之间的吸附即可。真空系统既可以作为吸盒的一部分位于吸盒内部，也可以作为独立的结构位于吸盒外部。
镀膜夹具上的整板晶片为P*Q矩阵，P为行数且P的最大值为矩阵的行数，Q为列数且Q的最大值为矩阵的列数，即1≤P≤行数，1≤Q≤列数，对于整板晶片上的每个晶片采用aPQ表达，aPQ是位于镀膜夹具第P行第Q列的每个晶片。
本发明中的镀膜夹具要满足以下条件：
1、要求镀膜夹具与基座整板尺寸一致；
2、镀膜夹具的行列间距是基座整板的行列间距整数倍，即P为M的整数倍，Q为N的整数倍。镀膜夹具为多层结构，在镀膜夹具晶片层上方的一层，每两行之间设置有一行磁片，磁片的数目与该行每个晶片的数目一致，每个磁片对应有每个晶片，可以将每个晶片固定在镀膜夹具上形成整板晶片；
3、镀膜夹具定位孔与基座整板定位孔一致。
本发明中固定夹具的吸盒要满足以下条件
1、吸盒下端与真空系统连接，通过电气装置可做180°翻转；
2、吸盒内部有弹性下压的吸嘴与镀膜夹具内晶片一一对应；
3、吸盒上的定位装置与基座整板载盘的定位孔一致。
在本发明中吸盒上表面的四个角部均设置有定位装置，在定位装置之间的区域均匀排布有金属棒，金属棒贯穿吸盒上表面，在吸盒上表面的上方，每个金属棒的顶部设置有吸嘴，在吸盒上表面的下方，每个金属棒上套接有弹簧并固定在吸盒内，金属棒底端设置有真空系统。在本发明中定位装置为设置在吸盒上的多个定位针，定位针分别与基座整板相应的载盘定位孔对应，这样在吸盒的吸嘴位于晶片上方时，定位针与载盘定位孔扣合，可以将吸盒固定在基座整板上。
在本发明中基座整板的载盘两侧边共有4个载盘定位孔，具体为载盘定位孔P1、载盘定位孔P2、载盘定位孔P3、载盘定位孔P4，对称分布在载盘两侧边，用来与吸盒的四个定位针相扣合。
镀膜夹具上设置有与基座整板上的基座整板定位孔一致的镀膜夹具定位孔，当吸盒固定 在基座整板上时，基座整板定位孔与镀膜夹具定位孔的扣合，可以确保镀膜夹具的稳定，有利于每个晶片与其对应的单体基座对应。
按照以上基座整板、镀膜夹具、吸盒的规格对本发明中的实施方式进行说明。
在利用镀膜夹具移动整板晶片之前，按照以下步骤对基座整板涂布底胶：
步骤1、将准备好的基座整板放置到基座提笼内等待涂布底胶；
步骤2、根据胶点大小位置调整喷胶时间和喷胶位置；
步骤3、基座整板内每个单体基座的左右平台上涂布底胶。
实施例1
在本实施例中镀膜夹具上的整板晶片行列与基座整板的行列间距相同，即完成基座整板上的全部单体基座的涂布底胶工艺后，对全部的单体基座同时进行上片工艺，在本实施例中镀膜夹具上的整板晶片为P*Q矩阵，基座整板上是M*N矩阵，P＝M，Q＝N，当基座整板上的每个单体基座的左右平台均涂布底胶后，按照以下步骤进行整板晶片的移动与放置，具体上片过程如下：
步骤1、将放置在镀膜夹具内的整板晶片放置到晶片提笼内，整板晶片上每个晶片的个数、吸盒内吸嘴的数目以及整板基座上单体基座的数目保持一致；
步骤2、通过机械手将带有整板晶片的镀膜夹具安装在吸盒内，开启真空系统，通过吸盒内的吸嘴吸住晶片，吸盒内每一个金属棒顶端的吸嘴对应镀膜夹具上的每个晶片，揭去上镀膜夹具的上电极盖板；
步骤3、通过机械手翻转吸盒，通过定位针使吸盒与基座整板载盘重合，镀膜夹具与基座整板重合；从而每个晶片与基座整板内的单体基座一一对应；
步骤4、下压吸嘴，使每个晶片接触对应的单体基座左右平台的底胶；
步骤5、对吸盒破真空后，每个吸嘴对每个晶片失去吸力，吸盒与镀膜夹具离开基座整板的载盘，整板晶片移载在基座整板内的每个单体基座上。
在本实施例中将镀膜夹具安装在吸盒内，以及翻转吸盒均通过电气装置实现，具体使用机械手来操作。
实施例2
在本实施例，镀膜夹具上的整板晶片移动至基座整板上的过程类似于实施例1，不同之处在于，本实施例中镀膜夹具上的整板晶片行列为基座整板的行列间距两倍，对于镀膜夹具上的整板晶片为P*Q矩阵，基座整板上是M*N矩阵，P＝2M，Q＝2N，即完成基座整板上的全部单体基座的涂布底胶工艺后，对位于基座整板上奇数行奇数列或偶数行偶数列的单体基座同 时进行上片工艺。在本实施例中选择先对基座整板上奇数行奇数列的单体基座上片，之后再对基座整板上偶数行偶数列的单体基座上片
当基座整板上的每个单体基座的左右平台均涂布底胶后，按照以下步骤进行整板晶片的移动与放置，具体上片过程如下：
步骤1、将放置在镀膜夹具内的整板晶片放置到晶片提笼内，整板晶片上每个晶片的个数、吸盒内吸嘴的数目一致，并且每个晶片与整板基座上奇数行奇数列单体基座的数目保持一致；
步骤2、通过机械手将带有整板晶片的镀膜夹具安装在吸盒内，通过吸盒内的吸嘴吸住晶片，吸盒内每一个金属棒顶端的吸嘴对应镀膜夹具上的每个晶片，揭去上镀膜夹具的上电极；
步骤3、通过机械手翻转吸盒，通过定位针使吸盒与基座整板载盘重合，镀膜夹具与基座整板重合；从而每个晶片与基座整板内的单体基座一一对应；
步骤4、下压吸嘴，使每个晶片接触对应的单体基座左右平台的底胶；
步骤5、对吸盒破真空后，每个吸嘴对每个晶片失去吸力，吸盒与镀膜夹具离开基座整板的载盘，整板晶片移载在基座整板内位于奇数行奇数列的每个单体基座上；
步骤6、返回步骤1，再次在镀膜夹具上放置整板晶片，重复动作步骤1至步骤5，在此步骤中，吸盒翻转后，位于镀膜夹具上的每个晶片与整板基座上偶数行偶数列的单体基座对应。
根据以上步骤完成基座整板上全部单体基座的上片工作。
实施例3
在本实施例，镀膜夹具上的整板晶片移动至基座整板上的过程类似于实施例1，不同之处在于，在本实施例中将镀膜夹具安装在吸盒内，以及翻转吸盒均通过手动实现。
此外，本实施例中镀膜夹具上的整板晶片行列为基座整板的行列间距3倍，对于镀膜夹具上的整板晶片为P*Q矩阵，基座整板上是M*N矩阵，P＝3M，Q＝3N，即完成基座整板上的全部单体基座的涂布底胶工艺后，对位于基座整板上相隔两行相隔两列的单体基座同时进行上片工艺。以12*12的基座整板为例，在本实施例中选择先对基座整板第1、4、7、10行，第1、4、7、10列上的单体基座整体上片，之后再对基座整板第2、5、8、11行，第2、5、8、11列上的单体基座整体上片，最后对基座整板第3、6、9、12行，第3、6、9、12列上的单体基座整体上片。
当基座整板上的每个单体基座的左右平台均涂布底胶后，按照以下步骤进行整板晶片的 移动与放置，具体上片过程如下：
步骤1、将放置在镀膜夹具内的整板晶片放置到晶片提笼内，整板晶片上每个晶片的个数、吸盒内吸嘴的数目一致，并且每个晶片与整板基座上第1、4、7、10行，第1、4、7、10列单体基座的数目保持一致；
步骤2、人工将带有整板晶片的镀膜夹具安装在吸盒内，通过吸盒内的吸嘴吸住晶片，吸盒内每一个金属棒顶端的吸嘴对应镀膜夹具上的每个晶片，揭去上镀膜夹具的上电极；
步骤3、人工翻转吸盒，通过定位针使吸盒与基座整板载盘重合，镀膜夹具与基座整板重合；从而每个晶片与基座整板内第1、4、7、10行，第1、4、7、10列的单体基座一一对应；
步骤4、下压吸嘴，使每个晶片接触对应的单体基座左右平台的底胶；
步骤5、对吸盒破真空后，每个吸嘴对每个晶片失去吸力，吸盒与镀膜夹具离开基座整板的载盘，整板晶片移载在基座整板内第1、4、7、10行，第1、4、7、10列的每个单体基座上；
步骤6、返回步骤1，再次在镀膜夹具上放置整板晶片，重复动作步骤1至步骤5，在此步骤中，吸盒翻转后，位于镀膜夹具上的每个晶片与整板基座上第2、5、8、11行，第2、5、8、11列的单体基座对应。
步骤7、返回步骤1，再次在镀膜夹具上放置整板晶片，重复动作步骤1至步骤5，在此步骤中，吸盒翻转后，位于镀膜夹具上的每个晶片与整板基座上第3、6、9、12行，第3、6、9、12列的单体基座对应。
根据以上步骤完成基座整板上全部单体基座的上片工作。
以上实施例仅列出了本发明的几种整体上片的顺序，本发明主要实现对整板基座的上片采用整板移动工艺，至于镀膜夹具的行列间距是基座整板的行列间距整数倍，是不同的上片顺序，根据行列间距可以变换出更多的上片顺序。
对于本领域技术人员而言，显然本发明不限于上述示范性实施例的细节，而且在不背离本发明的精神或基本特征的情况下，能够以其他的具体形式实现本发明。因此，无论从哪一点来看，均应将实施例看作是示范性的，而且是非限制性的，本发明的范围由所附权利要求而不是上述说明限定，因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。
此外，应当理解，虽然本说明书按照实施方式加以描述，但并非每个实施方式包含一个独立的技术方案，说明书的这种叙述方式仅仅是为清楚起见，本领域技术人员应当将说明书 作为一个整体，各实施例中的技术方案也可以经适当组合，形成本领域技术人员可以理解的其他实施方式。

Claims (10)

  1. 表面贴石英晶体谐振器生产中的整板上片装置，其特征在于：包括固定装置、位于固定装置内部的吸附装置、与固定装置可拆卸连接的移动装置，在移动装置上设置有用于贴装在基座整板(1)上的整板晶片，所述整板晶片由多个晶片(4)形成，所述吸附装置与移动装置上的整板晶片相接触。
  2. 如权利要求1所述的表面贴石英晶体谐振器生产中的整板上片装置，其特征在于：
    所述固定装置为吸盒(12)，所述吸附装置包括位于贯穿吸盒(12)上表面的金属棒(7)、位于金属棒(7)顶端的吸嘴(13)、套设在金属棒(7)上的弹簧(9)，金属棒(7)底端与真空系统连接，吸嘴(13)顶端与移动装置内的整板晶片一一对应；
    所述移动装置为镀膜夹具(10)，镀膜夹具(10)上每个晶片(4)的行列间距是基座整板(1)中单体基座(1-1)的行列间距整数倍。
  3. 如权利要求2所述的表面贴石英晶体谐振器生产中的整板上片装置，其特征在于：
    吸盒(12)上还设置有定位装置，所述定位装置为设置在吸盒上的多个定位针(8)，定位针(8)分别与基座整板上相应的载盘定位孔(1-2)对应；
    所述镀膜夹具(10)上设置有与基座整板(1)上的基座整板定位孔(1-3)一致的镀膜夹具定位孔(11)。
  4. 表面贴石英晶体谐振器生产中的整板上片方法，其特征在于：多个晶片形成整板晶片，整体移动整板晶片使得整板晶片中每个晶片正下方都有一个单体基座与之对应。
  5. 如权利要求4所述的表面贴石英晶体谐振器生产中的整板上片方法，其特征在于：整体移动整板晶片至基座整板上，包括以下步骤：
    步骤1、将整板晶片整体移动在带有吸附装置的固定装置内，通过吸附装置吸住整板晶片；
    步骤2、下压吸附装置，使每个晶片接触其对应的单体基座左右平台上的底胶；
    步骤3、分离吸附装置与整板晶片，整板晶片移载在基座整板内的每个单体基座上。
  6. 如权利要求5所述的表面贴石英晶体谐振器生产中的整板上片方法，其特征在于：
    在步骤1中整板晶片在电气装置或人工操作下，通过移动装置将整板晶片整体移动在固定装置内的吸附装置上方。
  7. 如权利要求5所述的表面贴石英晶体谐振器生产中的整板上片方法，其特征在于：
    在步骤2中，下压吸附装置前，将固定装置中的吸附装置位于整板晶片的上方，整板晶片中每个晶片的下方对应基座整板中相应单体基座的位置。
  8. 如权利要求6所述的表面贴石英晶体谐振器生产中的整板上片方法，其特征在于： 所述移动装置为镀膜夹具，镀膜夹具上每个晶片的行列间距是基座整板中单体基座的行列间距整数倍；镀膜夹具上的定位孔与基座整板上的定位孔一致。
  9. 如权利要求7或8所述的表面贴石英晶体谐振器生产中的整板上片方法，其特征在于：
    在步骤1中制作的固定装置为吸盒，吸附装置为位于吸盒内的吸嘴，吸盒下端与真空系统连接，吸盒内部的吸嘴与移动装置内的整板晶片一一对应，吸盒上的定位装置与基座整板载盘的定位孔一致。
  10. 如权利要求9所述的表面贴石英晶体谐振器生产中的整板上片方法，其特征在于：
    在步骤2中通过电气装置或人工操作移动吸盒，使得整板晶片位于基座整板上方。
PCT/CN2017/091032 2016-07-06 2017-06-30 表面贴石英晶体谐振器生产中的整板上片装置及方法 WO2018006755A1 (zh)

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