WO2020107750A1 - 一种有机电致发光器件及其制备方法 - Google Patents

一种有机电致发光器件及其制备方法 Download PDF

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WO2020107750A1
WO2020107750A1 PCT/CN2019/078597 CN2019078597W WO2020107750A1 WO 2020107750 A1 WO2020107750 A1 WO 2020107750A1 CN 2019078597 W CN2019078597 W CN 2019078597W WO 2020107750 A1 WO2020107750 A1 WO 2020107750A1
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layer
metal oxide
silver
substrate
organic electroluminescent
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顾宇
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO

Definitions

  • the present invention relates to the field of display technology, and in particular, to an organic electroluminescent device and a preparation method thereof.
  • Organic light-emitting devices can produce flexible display devices, drive voltage and energy consumption due to their ability to emit light independently, ultra-thin and thin, wide viewing angle, fast response speed, high luminous efficiency, wide temperature adaptation range, flexible display devices
  • OLEDs organic light-emitting devices
  • the low-level advantages have attracted the attention of many display panel manufacturers and are regarded as the next-generation mainstream display technology.
  • TCO/Ag/TCO Transparent Conducting Oxide (TCO) type composite anode structure.
  • PR Photo Resist
  • the evaporation equipment and the stripping machine are separate from each other.
  • the substrate after the peeling treatment needs to be stored for a period of time before performing the evaporation treatment.
  • the upper TCO layer 15' of the composite anode structure will be made very thin, because the island-shaped TCO layer 15' is prone to defects 152', which exposes the metal silver layer below it 13' metallic silver on the surface.
  • there will be a small amount of sulfur and the sulfur and the exposed silver will form black non-conductive silver sulfide (Ag2S), resulting in substrate defects, which in turn reduces the efficiency of the prepared OLED device and even fails to light up.
  • One aspect of the present invention is to provide an organic electroluminescent device which can store its substrate in an atmosphere for a long time while keeping its substrate performance basically unchanged, improving the performance and yield of the device.
  • An organic electroluminescent device includes a substrate and a composite anode structure provided thereon.
  • the composite anode structure includes a lower metal oxide layer, a metal silver layer and an upper metal oxide layer.
  • the metal silver at the position where the surface of the metal silver layer is not shielded by the defect of the upper metal oxide layer is silver oxide (Ag2O).
  • the metal oxide in the upper metal oxide layer is indium tin oxide.
  • the metal oxide in the upper metal oxide layer is indium zinc oxide.
  • the metal oxide in the lower metal oxide layer is indium tin oxide.
  • the metal oxide in the lower metal oxide layer is indium zinc oxide.
  • the metal oxide in the upper metal oxide layer is the same as the metal oxide in the lower metal oxide layer.
  • the silver oxide on the surface layer of the metal silver layer is formed by irradiating the surface of the composite anode structure with ultraviolet rays.
  • the silver oxide on the surface of the metallic silver layer is formed by treating the surface of the composite anode structure with oxygen plasma.
  • the substrate is further provided with a vapor-deposited hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer, Cathode, optical coupling layer and encapsulation layer.
  • Another aspect of the present invention is to provide a method for preparing the organic electroluminescent device according to the present invention, including the following steps:
  • An anode preparation step which is to provide a substrate, and form a composite anode structure composed of a lower metal oxide layer, a metal silver layer and an upper metal oxide layer on the substrate and a PR protective layer provided thereon, and peel off the PR protective layer;
  • An oxidation step is to perform an oxidation treatment on the substrate, so that the metal silver on the surface of the metal silver layer exposed due to the defect of the upper metal oxide layer forms silver oxide.
  • the oxidizing step is to put the substrate in an ultraviolet ozone treatment device, irradiate the substrate with an ultraviolet lamp, and irradiate oxygen with ultraviolet light to generate ozone to expose the upper metal to oxidation
  • the metallic silver outside the object layer is oxidized to form silver oxide.
  • the oxidizing step is to put the substrate into an oxygen plasma processing apparatus
  • a large amount of ozone is generated when the oxygen plasma processes the surface of the substrate, and the ozone is used to expose The metal silver outside the upper metal oxide layer is oxidized to form silver oxide.
  • it further includes a functional layer preparation step, which is to sequentially vaporize a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron on the substrate A transport layer, an electron injection layer, a cathode, and an optical coupling layer, and finally encapsulating the organic electroluminescent device.
  • a functional layer preparation step which is to sequentially vaporize a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron on the substrate A transport layer, an electron injection layer, a cathode, and an optical coupling layer, and finally encapsulating the organic electroluminescent device.
  • the invention relates to an organic electroluminescent device, which is subjected to oxidation treatment on its substrate to form silver oxide on the surface of the metal silver layer exposed to the air due to the defect of the upper metal oxide layer in the composite anode structure, Therefore, it can be placed in the air for a relatively long time, and will not generate silver sulfide with the sulfur in the air. Improves the performance and yield of the device.
  • the preparation method of the organic electroluminescent device according to the present invention has a simple and easy manufacturing process, is suitable for a variety of TCO/Ag/TCO composite anode structures, and can effectively repair the silver sulfide existing in the existing manufacturing process Defects make it easier to store the substrate after stripping the PR protective layer.
  • FIG. 1 is a schematic diagram of the structure of a substrate and a composite anode of an organic electroluminescent device involved in the prior art.
  • FIG. 2 is a schematic diagram of a substrate and a composite anode structure of an organic electroluminescent device according to an embodiment of the present invention.
  • an embodiment of the present invention provides an organic electroluminescent device, which includes a substrate 10 and a composite anode structure disposed thereon.
  • the composite anode structure includes a lower metal oxide layer 11, a metal silver layer 13, and an upper metal oxide layer 15.
  • the metal silver on the surface of the metal silver layer 13 which is not shielded by the upper metal oxide layer 15 due to the defect 152 of the upper metal oxide layer 15 is oxidized to form silver oxide and exposed to the outside, and at the same time shields the metal silver underneath.
  • the resistivity of silver is ⁇ 1.6 ⁇ 10-8 ⁇ m
  • the resistivity of silver is ⁇ 1 ⁇ 10-4 ⁇ m, which is not much different from the resistivity of the upper metal oxide (TCO).
  • TCO is selected from ITO (Indium Tin Oxides, Indium Tin Oxide, TCO)
  • the resistance is ⁇ 5 ⁇ 10-4 ⁇ m, the difference between the two is not large; while the resistivity of silver sulfide is ⁇ 10 ⁇ 106 ⁇ m, which is almost non-conductive.
  • the substrate is further provided with a vapor-deposited hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer, Cathode, optical coupling layer and encapsulation layer.
  • an embodiment of the present invention also provides a manufacturing method for manufacturing the above organic electroluminescent device, including the following steps:
  • a substrate is provided on which a composite anode structure and a PR protective layer on the surface are formed, wherein the composite anode structure includes a lower metal oxide layer, a middle metal silver layer, and an upper metal oxide layer, wherein the upper, The lower metal oxide layer is made of ITO material, and then the PR protective layer is stripped;
  • the ultraviolet light incident on the surface of the substrate can not only further clean the residual organic matter on the substrate, but also allow the ultraviolet light to be irradiated Oxygen generates ozone.
  • the metal silver on the surface of the metal silver layer not covered by the upper metal oxide layer is easily oxidized to silver oxide when it encounters the ozone , And the silver oxide itself will not combine with sulfur in the air under normal conditions to become silver sulfide, and at the same time protect the metal silver under it from being sulfided; at the same time, the silver oxide has a material similar to ITO Resistivity, so it does not significantly affect the performance of the device; the substrate after oxidation treatment can be placed in the atmospheric atmosphere for a long time;
  • Pretreatment of the substrate before vapor deposition of the OLED functional layer such as cleaning, baking, anode treatment, etc.;
  • Still another embodiment of the present invention provides a manufacturing method for manufacturing the above organic electroluminescent device, including the following steps:
  • a substrate is provided on which a composite anode structure and a PR protective layer on the surface are formed, wherein the composite anode structure includes a lower metal oxide layer, a middle metal silver layer, and an upper metal oxide layer, wherein the upper,
  • the lower metal oxide layer is made of IZO (Indium Zinc Oxide, Indium Zinc Oxide, TCO) material, and then the PR protective layer is stripped;
  • the substrate is placed in an oxygen plasma processing apparatus for oxygen plasma treatment, which can not only further clean residual organic matter on the surface of the substrate, but also generate a large amount of ozone due to the upper metal oxide layer
  • the metal silver on the surface of the metal silver layer that is not covered by the upper metal oxide layer is easily oxidized into silver oxide when it encounters the ozone, and the silver oxide itself will not be in normal conditions It combines with sulfur in the air to become silver sulfide, which also protects the metal silver under it from being sulfided; at the same time, the silver oxide has a resistivity similar to that of the IZO material, so it does not significantly affect the device’s Performance; the substrate after oxidation treatment can be placed in the atmospheric atmosphere for a long time;
  • Pretreatment of the substrate before vapor deposition of the OLED functional layer such as cleaning, baking, anode treatment, etc.;
  • the invention relates to an organic electroluminescent device, which is subjected to oxidation treatment on its substrate to form silver oxide on the surface of the metal silver layer exposed to the air due to the defect of the upper metal oxide layer in the composite anode structure, Therefore, it can be placed in the air for a relatively long time, and will not generate silver sulfide with the sulfur in the air. Improves the performance and yield of the device.
  • the preparation method of the organic electroluminescent device according to the present invention has a simple and easy manufacturing process, is suitable for a variety of TCO/Ag/TCO composite anode structures, and can effectively repair the silver sulfide existing in the existing manufacturing process Defects make it easier to store the substrate after stripping the PR protective layer.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明提供了一种有机电致发光器件，其包括基板和其上设置的复合阳极结构。其中所述复合阳极结构包括下金属氧化物层、金属银层和上金属氧化物层。其中所述金属银层表面未被所述上金属氧化物层所遮蔽的位置处的金属银为氧化银并暴露于外。本发明提供了一种有机电致发光器件，其能够在保持其基板性能基本不变的前提下，使其基板可以长时间在大气氛围中储存，提高了器件的性能和良率。

Description

一种有机电致发光器件及其制备方法 技术领域
本发明涉及显示技术领域，尤其是，其中的一种有机电致发光器件及其制备方法。
 背景技术
有机电致发光器件（organic light-emitting devices，OLEDs）由于具有能自主发光、超轻薄、视角宽广、响应速度快、发光效率高、温度适应范围大、可制作柔性显示器件、驱动电压及能耗低等优点吸引了众多显示面板厂商的目光，被视为下一代主流的显示技术。
已知，在常见的电致发光器件的结构之中，请参阅图1所示，基板10’上通常会使用TCO/Ag/TCO（Transparent Conducting Oxide，TCO）类型的复合阳极结构。然后制备完所述复合阳极结构后，通常的情况下会设置一层PR（Photo Resist）保护层来保护所述复合阳极结构，在蒸镀之前会进行化学物理的剥离流程，去除所述PR保护层。
但是在一般的实验或者量产设备中，蒸镀设备和剥离机台是相互分立的。剥离处理后的基板需要储存一段时间后再进行蒸镀处理。而为了提高OLED的效率，所述复合阳极结构的上TCO层15’会做的很薄，由于岛状的TCO层15’容易出现缺陷152’，进而暴露出其下方与其相接的金属银层13’表层的金属银。而在空气氛围中会有少量的硫存在，硫和暴露的银会形成黑色不导电的硫化银（Ag2S），从而导致基板缺陷，进而使得制备出的OLED器件效率降低，甚至无法点亮。
因此，确有必要来研发一种新型的有机电致发光器件及其制备方法，来克服现有技术中的缺陷。
 技术问题
本发明的一个方面是提供一种有机电致发光器件，其能够在保持其基板性能基本不变的前提下，使其基板可以长时间在大气氛围中储存，提高了器件的性能和良率。
 技术解决方案
本发明采用的技术方案如下：
一种有机电致发光器件，包括基板和其上设置的复合阳极结构。其中所述复合阳极结构包括下金属氧化物层、金属银层和上金属氧化物层。其中所述金属银层表面因所述上金属氧化物层的缺陷而未被其遮蔽位置处的金属银为氧化银（Ag2O）。
进一步的，在不同实施方式中，其中所述上金属氧化物层中的金属氧化物为铟锡氧化物。
进一步的，在不同实施方式中，其中所述上金属氧化物层中的金属氧化物为铟锌氧化物。
进一步的，在不同实施方式中，其中所述下金属氧化物层中的金属氧化物为铟锡氧化物。
进一步的，在不同实施方式中，其中所述下金属氧化物层中的金属氧化物为铟锌氧化物。
进一步的，在不同实施方式中，其中所述上金属氧化物层中的金属氧化物与所述下金属氧化物层中的金属氧化物一致。
进一步的，在不同实施方式中，其中所述金属银层表层的氧化银是通过紫外线照射所述复合阳极结构表面的方式形成的。
进一步的，在不同实施方式中，其中所述金属银层表层的氧化银是通过氧等离子体处理所述复合阳极结构表面的方式形成的。
进一步的，在不同实施方式中，其中所述基板上还依次设置有蒸镀空穴注入层、空穴传输层、电子阻挡层、发光层、空穴阻挡层、电子传输层、电子注入层、阴极、光学耦合层以及封装层。
进一步的，本发明的又一方面是提供一种制备本发明涉及的所述有机电致发光器件的制备方法，包括以下步骤：
阳极制备步骤，其为提供一基板，并于所述基板上形成由下金属氧化物层、金属银层和上金属氧化物层构成的复合阳极结构和其上设置的PR保护层，剥离所述PR保护层；
氧化步骤，其为对所述基板进行氧化处理，进而使得因所述上金属氧化物层缺陷而暴露于外的金属银层表面的金属银形成氧化银。
进一步的，在不同实施方式中，其中所述氧化步骤为将所述基板放入紫外臭氧处理设备中，使用紫外灯照射所述基板，通过紫外光照射氧气生成臭氧使得暴露于所述上金属氧化物层外的金属银氧化形成氧化银。
进一步的，在不同实施方式中，其中所述氧化步骤为将所述基板放入氧等离子体处理设备中，在氧等离子体处理所述基板表面时会产生大量的臭氧，通过所述臭氧使得暴露于所述上金属氧化物层外的金属银氧化形成氧化银。
进一步的，在不同实施方式中，其还包括功能层制备步骤，其为在所述基板上依次蒸镀空穴注入层、空穴传输层、电子阻挡层、发光层、空穴阻挡层、电子传输层、电子注入层、阴极、光学耦合层，最后封装完成所述有机电致发光器件。
 有益效果
本发明涉及的一种有机电致发光器件，通过对其基板进行氧化处理，使其因其复合阳极结构中的上金属氧化物层自身缺陷而暴露在空气中的金属银层表面形成氧化银，从而使其能相对长时间的放置在空气当中，且不会与空气中的硫生成硫化银，避免了现有技术中常见的阳极金属银被硫化为硫化银后而导致的器件缺陷，从而有效地提高了器件的性能和良率。
进一步的，本发明涉及的所述有机电致发光器件的制备方法，其制程简单易行，适用于多种TCO/Ag/TCO的复合阳极结构，可以有效地修补现有制程中存在的硫化银缺陷，使剥离PR保护层后的基板更加容易储存。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术中涉及的一种有机电致发光器件，其基板和复合阳极结构的示意图。
图2为本发明一个实施方式中涉及的一种有机电致发光器件，其基板和复合阳极结构的示意图。
 本发明的实施方式
以下将结合附图和实施例，对本发明涉及的一种有机电致发光器件及其制备方法的技术方案作进一步的详细描述。
请参阅图2所示，本发明的一个实施方式提供了一种有机电致发光器件，其包括基板10和其上设置的复合阳极结构。
其中所述复合阳极结构包括下金属氧化物层11、金属银层13和上金属氧化物层15。其中所述金属银层13表面因所述上金属氧化物层15自身缺陷152而未被其遮蔽位置处的金属银会被氧化形成氧化银并暴露于外，并同时遮蔽其下的金属银。
其中，因所述上氧化物层15存在的缺陷152而暴露出来的金属银层13表面的金属银变为氧化银后，由于银的电阻率为~1.6×10-8 Ω·m，而氧化银的电阻率为~1×10-4 Ω·m，与所述上层金属氧化物（TCO）的电阻率差别不大，例如，当所述TCO选用ITO（Indium Tin Oxides，氧化铟锡，TCO的一种）时，其电阻率为~5×10-4 Ω·m，两者差距不大；而硫化银的电阻率为~10×106 Ω·m，几乎不导电。所以，将暴露的金属银氧化为氧化银后，几乎不会影响器件的性能；同时氧化银在正常条件下也不会结合硫成为硫化银，因此也就避免了硫化银的形成，进而使得在所述PR保护层剥离过后的所述基板10可以相对长时间储存在大气氛围之中。
进一步的，在不同实施方式中，其中所述基板上还依次设置有蒸镀空穴注入层、空穴传输层、电子阻挡层、发光层、空穴阻挡层、电子传输层、电子注入层、阴极、光学耦合层以及封装层。
进一步的，本发明的一个实施方式还提供了一种用于制备上述有机电致发光器件的制备方法，包括以下步骤：
提供一基板，在所述基板上形成复合阳极结构以及其表面的PR保护层，其中所述复合阳极结构包括下金属氧化物层、中层金属银层和上层金属氧化物层，其中所述上、下金属氧化物层均选用ITO材质组成，然后剥离所述PR保护层；
将所述基板放入紫外臭氧处理设备中进行处理，在紫外灯的照射下，入射到所述基板表面上的紫外光不仅能够进一步的清洗所述基板上的残留有机物，还可以让紫外光照射氧气生成臭氧，因所述上金属氧化物层的缺陷而未被所述上金属氧化物层所覆盖的金属银层表面的金属银，在遇到所述臭氧时，其容易氧化变为氧化银，而所述氧化银本身不会在正常条件下与空气中的硫结合变为硫化银，同时也就保护了其下的金属银不会被硫化；同时所述氧化银具有和ITO材质类似的电阻率，所以并不会明显的影响器件的性能；氧化处理后的所述基板可以在大气氛围中长时间的放置备用；
对所述基板进行蒸镀OLED功能层前的预处理，例如清洗、烘烤、阳极处理等等；
在所述基板上依次蒸镀空穴注入层、空穴传输层、电子阻挡层、发光层、空穴阻挡层、电子传输层、电子注入层、阴极以及光学耦合层，最后对其进行封装，从而完成所述有机电致发光器件。
进一步的，本发明的又一个实施方式还提供了一种用于制备上述有机电致发光器件的制备方法，包括以下步骤：
提供一基板，在所述基板上形成复合阳极结构以及其表面的PR保护层，其中所述复合阳极结构包括下金属氧化物层、中层金属银层和上层金属氧化物层，其中所述上、下金属氧化物层均选用IZO（ Indium Zinc Oxide，氧化铟锌，TCO的一种）材质组成，然后剥离所述PR保护层；
将所述基板放入氧等离子体处理设备中，进行氧等离子体处理，该处理不仅能够进一步的清洗所述基板表面上的残留有机物，还可以产生大量的臭氧，因所述上金属氧化物层的缺陷而未被所述上金属氧化物层所覆盖的金属银层表面的金属银，在遇到所述臭氧时，其容易氧化变为氧化银，而所述氧化银本身不会在正常条件下与空气中的硫结合变为硫化银，同时也就保护了其下的金属银不会被硫化；同时所述氧化银具有和IZO材质类似的电阻率，所以并不会明显的影响器件的性能；氧化处理后的所述基板可以在大气氛围中长时间的放置备用；
对所述基板进行蒸镀OLED功能层前的预处理，例如清洗、烘烤、阳极处理等等；
在所述基板上依次蒸镀空穴注入层、空穴传输层、电子阻挡层、发光层、空穴阻挡层、电子传输层、电子注入层、阴极以及光学耦合层，最后对其进行封装，从而完成所述有机电致发光器件。
本发明涉及的一种有机电致发光器件，通过对其基板进行氧化处理，使其因其复合阳极结构中的上金属氧化物层自身缺陷而暴露在空气中的金属银层表面形成氧化银，从而使其能相对长时间的放置在空气当中，且不会与空气中的硫生成硫化银，避免了现有技术中常见的阳极金属银被硫化为硫化银后而导致的器件缺陷，从而有效地提高了器件的性能和良率。
进一步的，本发明涉及的所述有机电致发光器件的制备方法，其制程简单易行，适用于多种TCO/Ag/TCO的复合阳极结构，可以有效地修补现有制程中存在的硫化银缺陷，使剥离PR保护层后的基板更加容易储存。
本发明的技术范围不仅仅局限于上述说明中的内容，本领域技术人员可以在不脱离本发明技术思想的前提下，对上述实施例进行多种变形和修改，而这些变形和修改均应当属于本发明的范围内。

Claims (10)

  1. 一种有机电致发光器件，包括基板和其上设置的复合阳极结构；其中所述复合阳极结构包括下金属氧化物层、金属银层和上金属氧化物层；其中所述金属银层表面因所述上金属氧化物层的缺陷而未被其遮蔽位置处的金属银为氧化银。
  2. 根据权利要求1所述的有机电致发光器件，其中所述上金属氧化物层中的金属氧化物为铟锡氧化物。
  3. 根据权利要求1所述的有机电致发光器件，其中所述上金属氧化物层中的金属氧化物为铟锌氧化物。
  4. 根据权利要求1所述的有机电致发光器件，其中所述下金属氧化物层中的金属氧化物为铟锡氧化物。
  5. 根据权利要求1所述的有机电致发光器件，其中所述下金属氧化物层中的金属氧化物为铟锌氧化物。
  6. 根据权利要求1所述的有机电致发光器件，其中所述上金属氧化物层中的金属氧化物与所述下金属氧化物层中的金属氧化物一致。
  7. 根据权利要求1所述的有机电致发光器件，其中所述基板上还依次设置有蒸镀空穴注入层、空穴传输层、电子阻挡层、发光层、空穴阻挡层、电子传输层、电子注入层、阴极、光学耦合层以及封装层。
  8. 一种用于制备根据权利要求1所述的有机电致发光器件的制备方法，包括以下步骤：
    阳极制备步骤，其为提供一基板，并于所述基板上形成由下金属氧化物层、金属银层和上金属氧化物层构成的复合阳极结构和其上设置的PR保护层，剥离所述PR保护层；
    氧化步骤，其为对所述基板进行氧化处理，进而使得因所述上金属氧化物层缺陷而暴露于外的金属银层表面的金属银形成氧化银。
  9. 根据权利要求8所述的有机电致发光器件的制备方法，其中所述氧化步骤为将所述基板放入紫外臭氧处理设备中，使用紫外灯照射所述基板，通过紫外光照射氧气生成臭氧使得暴露于所述上金属氧化物层外的金属银氧化形成氧化银。
  10. 根据权利要求8所述的有机电致发光器件的制备方法，其中所述氧化步骤为将所述基板放入氧等离子体处理设备中，在氧等离子体处理所述基板表面时会产生大量的臭氧，通过所述臭氧使得暴露于所述上金属氧化物层外的金属银氧化形成氧化银。
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