WO2020107677A1 - 液晶显示面板及液晶显示装置 - Google Patents

液晶显示面板及液晶显示装置 Download PDF

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Publication number
WO2020107677A1
WO2020107677A1 PCT/CN2019/071849 CN2019071849W WO2020107677A1 WO 2020107677 A1 WO2020107677 A1 WO 2020107677A1 CN 2019071849 W CN2019071849 W CN 2019071849W WO 2020107677 A1 WO2020107677 A1 WO 2020107677A1
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Prior art keywords
layer
liquid crystal
light
substrate
crystal display
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Ceased
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PCT/CN2019/071849
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English (en)
French (fr)
Inventor
陆鹏
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Application filed by Wuhan China Star Optoelectronics Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Technology Co Ltd
Priority to US16/472,883 priority Critical patent/US11366350B2/en
Publication of WO2020107677A1 publication Critical patent/WO2020107677A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/1365—Matching; Classification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/198—Contact-type image sensors [CIS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50—Protective arrangements
    • G02F2201/501—Blocking layers, e.g. against migration of ions
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/58—Arrangements comprising a monitoring photodetector

Definitions

  • the present application relates to a display technology, in particular to a liquid crystal display panel and a liquid crystal display device.
  • the fingerprint unlock function is widely used in display products in life.
  • the conventional fingerprint unlock key is generally placed in the non-display area. Full display is a major trend in the future.
  • In-plane fingerprint unlock function will be more and more Used in products.
  • the best way to realize in-plane fingerprint unlocking is optical fingerprint recognition.
  • light needs to pass from the array substrate through the color filter substrate to reach the finger, and the reflected light of the finger then passes from the color filter substrate to the optical fingerprint recognition module on the array substrate, and then is photodiode It is detected that the light intensity detected by such an optical path is very weak and the sensitivity will be poor.
  • Embodiments of the present application provide a liquid crystal display panel and a liquid crystal display device to solve the problem in the existing liquid crystal display panel that light needs to pass through the color filter substrate from the array substrate to the finger, and the reflected light of the finger then passes through the color filter substrate to the array substrate
  • the optical fingerprint recognition module on the computer is then detected by the photodiode, which leads to the technical problem that the light intensity detected by the optical path is very weak and the sensitivity is very poor.
  • An embodiment of the present application provides a liquid crystal display panel, which includes:
  • Array substrate set on the side facing the user
  • Color film substrate set on the side facing away from the user
  • Liquid crystal disposed between the array substrate and the color filter substrate;
  • the fingerprint recognition module is arranged on the side of the array substrate facing the liquid crystal, so as to shorten the path of the reflected light of the fingerprint to the photodiode;
  • the fingerprint identification module includes a thin film transistor and the photodiode for converting light energy into electrical energy, and the thin film transistor is electrically connected to the output end of the photodiode;
  • the thin film transistor includes a substrate and a gate, an insulating layer, an active layer, a source/drain, a first passivation layer, a second passivation layer and a A shading layer;
  • the photodiode includes the substrate and the insulating layer, source/drain electrode layer, N-type layer, intermediate layer, P-type layer, contact electrode, third passivation layer and second formed on the substrate in this order Shading layer
  • the contact electrode and the third passivation layer are sequentially formed on the first light-shielding layer
  • the source/drain and the source/drain electrode layers are electrically connected and arranged in the same layer, the first light-shielding layer is used to block the thin film transistor and part of the second passivation layer that does not require light, the The second light shielding layer is used to block the photodiode.
  • the thin film transistor further includes a third light shielding layer disposed between the gate and the substrate, and the third light shielding layer is used for the thin film transistor and some of the The first passivation layer;
  • the material of the intermediate layer is one of Si-based, organic OPD and perovskite.
  • the intermediate layer is perovskite, and the thickness of the intermediate layer is between 250 nm and 3 ⁇ m.
  • the N-type layer refers to one or more electron transport material layers.
  • the P-type layer is a hole transport material layer
  • the hole transport material is a single hole transport compound or elemental material, or two or more hole transport compounds or elemental materials Mixture of materials.
  • the intermediate layer includes at least one anion selected from halide anions and chalcogenide anions.
  • An embodiment of the present application also provides a liquid crystal display panel, which includes:
  • Array substrate set on the side facing the user
  • Color film substrate set on the side facing away from the user
  • Liquid crystal disposed between the array substrate and the color filter substrate;
  • the fingerprint recognition module is arranged on the side of the array substrate facing the liquid crystal, so as to shorten the path of the reflected light of the fingerprint to the photodiode;
  • the fingerprint identification module includes a thin film transistor and the photodiode for converting light energy into electrical energy, and the thin film transistor is electrically connected to the output end of the photodiode.
  • the thin film transistor includes a substrate and a gate, an insulating layer, an active layer, a source/drain, and a first passivation sequentially formed on a surface of the substrate facing the color filter substrate Layer, second passivation layer and first shading layer;
  • the photodiode includes the substrate and the insulating layer, source/drain electrode layer, N-type layer, intermediate layer, P-type layer, contact electrode, third passivation layer and second formed on the substrate in this order Shading layer
  • the contact electrode and the third passivation layer are sequentially formed on the first light-shielding layer
  • the source/drain and the source/drain electrode layers are electrically connected and arranged in the same layer, the first light-shielding layer is used to block the thin film transistor and part of the second passivation layer that does not require light, the The second light shielding layer is used to block the photodiode.
  • the thin film transistor further includes a third light shielding layer, the third light shielding layer is disposed between the gate and the substrate, and the third light shielding layer is used for the The thin film transistor and part of the first passivation layer that does not require light.
  • the material of the intermediate layer is one of Si-based, organic OPD, and perovskite.
  • the intermediate layer is perovskite, and the thickness of the intermediate layer is between 250 nm and 3 ⁇ m.
  • the present application also relates to a liquid crystal display device, including a liquid crystal display panel and a light source.
  • the liquid crystal display panel includes:
  • Array substrate set on the side facing the user
  • Color film substrate set on the side facing away from the user
  • Liquid crystal disposed between the array substrate and the color filter substrate;
  • the fingerprint recognition module is arranged on the side of the array substrate facing the liquid crystal, so as to shorten the path of the reflected light of the fingerprint to the photodiode;
  • the fingerprint identification module includes a thin film transistor and the photodiode for converting light energy into electrical energy, and the thin film transistor is electrically connected to the output end of the photodiode.
  • the thin film transistor includes a substrate and a gate, an insulating layer, an active layer, a source/drain, and a first passivation sequentially formed on a surface of the substrate facing the color filter substrate Layer, second passivation layer and first shading layer;
  • the photodiode includes the substrate and the insulating layer, source/drain electrode layer, N-type layer, intermediate layer, P-type layer, contact electrode, third passivation layer and second formed on the substrate in this order Shading layer
  • the contact electrode and the third passivation layer are sequentially formed on the first light-shielding layer
  • the source/drain and the source/drain electrode layers are electrically connected and arranged in the same layer, the first light-shielding layer is used to block the thin film transistor and part of the second passivation layer that does not require light, the The second light shielding layer is used to block the photodiode.
  • the thin film transistor further includes a third light shielding layer, the third light shielding layer is disposed between the gate and the substrate, and the third light shielding layer is used for the The thin film transistor and part of the first passivation layer that does not require light.
  • the material of the intermediate layer is one of Si-based, organic OPD, and perovskite.
  • the intermediate layer is perovskite, and the thickness of the intermediate layer is between 250 nm and 3 ⁇ m.
  • the liquid crystal display panel and the liquid crystal display device of the present application shorten the distance of the light reflected by the finger and improve the fingerprint by arranging the array substrate provided with the fingerprint recognition module at the end facing the user Identify the sensitivity of the module; in addition, the first light-shielding layer and the second light-shielding layer are used to prevent the backlight light source from illuminating the photodiode, causing the photodiode to misjudge; the third light-shielding layer is used to prevent metal reflection, such as gate, source/drain Extreme.
  • the light in the existing liquid crystal display panel needs to pass from the array substrate through the color filter substrate to reach the finger, and the reflected light of the finger then passes from the color filter substrate to the optical fingerprint recognition module on the array substrate, and then is detected by the photodiode.
  • FIG. 1 is a schematic structural diagram of a conventional liquid crystal display device
  • FIG. 2 is a schematic structural diagram of an embodiment of a liquid crystal display panel of this application.
  • FIG. 3 is a schematic structural diagram of a fingerprint identification module according to an embodiment of a liquid crystal display panel of this application;
  • FIG. 4 is a schematic structural diagram of an embodiment of a liquid crystal display device of the present application.
  • FIG. 2 is a schematic structural diagram of an embodiment of a liquid crystal display panel of the present application
  • FIG. 3 is a schematic structural diagram of a fingerprint recognition module of an embodiment of a liquid crystal display panel of the present application.
  • the liquid crystal display panel 100 of this embodiment includes an array substrate 11, a color filter substrate 12, a liquid crystal 13, and a fingerprint recognition module 14.
  • the array substrate 11 is provided on the side facing the user.
  • the color filter substrate 12 is disposed on the side facing away from the user.
  • the liquid crystal 13 is provided between the array substrate 11 and the color filter substrate 12.
  • the fingerprint recognition module 14 is disposed on the side of the array substrate 11 facing the liquid crystal 13 to shorten the distance of the reflected light of the fingerprint to the photodiode 142.
  • the fingerprint recognition module 14 includes a thin film transistor 141 and a photodiode 142 for converting light energy into electrical energy.
  • the thin film transistor 141 is electrically connected to the output terminal of the photodiode 142.
  • the fingerprint recognition module 14 is disposed in the display area of the liquid crystal display panel 100.
  • the liquid crystal display panel 100 of the present application by arranging the array substrate 11 provided with the fingerprint recognition module 14 at the end facing the user, the distance of the light reflected by the finger is shortened, the loss of light intensity is reduced, and the sensitivity of the fingerprint recognition module 14 is improved .
  • the fingerprint identification module 14 is disposed on the array substrate 11 so that the thin film transistor 141 in the fingerprint identification module 14 and the thin film transistor on the array substrate 11 can be prepared under the same manufacturing process, saving the preparation time, thereby improving the preparation s efficiency. And the two share a substrate 1411, saving material.
  • FIG. 3 is a schematic structural diagram of a fingerprint identification module according to an embodiment of a liquid crystal display panel of the present application.
  • the thin film transistor 141 includes a substrate 1411 and a gate 1412, an insulating layer 1413, an active layer 1414, and source/drain 1415 formed in this order on the surface of the substrate 1411 facing the color filter substrate 12
  • the first passivation layer 1416, the second passivation layer 1417, and the first light-shielding layer 1418 are examples of the first light-shielding layer 1418.
  • the photodiode 142 includes a substrate 1411 and an insulating layer 1413, a source/drain electrode layer 1421, an N-type layer 1421, an intermediate layer 1423, a P-type layer 1424, a contact electrode 1425, a third passivation layer 1426 and Second shading layer 1427.
  • a contact electrode 1425 and a third passivation layer 1426 are sequentially formed on the first light-shielding layer 1418.
  • the source/drain 1415 and the source/drain electrode layer 1421 are electrically connected and disposed in the same layer.
  • the first light-shielding layer 1418 is used to shield the thin film transistor 141 and the second passivation layer 1417 that does not require light.
  • the first light-shielding layer 1418 is used for the thin film transistor 141 to prevent the light from the backlight from irradiating the thin film transistor 141.
  • the second light-shielding layer 1427 is used to block the photodiode 142 to prevent the light from the backlight from irradiating the intermediate layer 1423 of the photodiode 142, which may cause misjudgment.
  • the thin film transistor 141 further includes a third light-shielding layer 1419.
  • the third light-shielding layer 1419 is provided between the gate electrode 1412 and the substrate 1411.
  • the third light-shielding layer 1419 is used for the thin film transistor 141 and a part of the first passivation layer 1417 that does not require light.
  • the function of the third light-shielding layer 1419 is to prevent external light from irradiating the metal of the thin film transistor 141 and generating reflected light.
  • the N-type layer 1422 refers to one or more electron transport material layers.
  • the electron transport material may be a single electron transport compound or elemental material, or a mixture of two or more electron transport compounds or elemental materials.
  • the electron transport compound or elemental material may be undoped or doped with one or more dopant elements.
  • the P-type layer 1424 refers to a hole transporting material layer, and the hole transporting material may be a single hole transporting compound or elemental material, or a mixture of two or more hole transporting compounds or elemental materials.
  • the hole transport compound or elemental material may be undoped or doped with one or more dopant elements.
  • the intermediate layer 1423 is perovskite.
  • the intermediate layer 1423 includes at least one anion selected from halide anions and chalcogenide anions.
  • the intermediate layer 1423 includes a first cation, a second cation, and at least one anion described above.
  • the first cation is an organic cation, such as hydrogen, nitrogen or oxygen.
  • the second cation is a divalent metal cation, which may be one of Ca 2+ , Sr 2+ , Cd 2+ , Sn 2+ and Pb 2+ .
  • the perovskite is selected from CH 3 NH 3 PbCl 2 I, CH 3 NH 3 PbBrCl 2 , CH 3 NH 3 SnF 2 Br, and CH 3 NH 3 PbBrI 2 .
  • the thickness of the intermediate layer 1423 is between 250 nm and 3 ⁇ m.
  • the thickness of the intermediate layer 1423 may be 300 nanometers, 350 nanometers, 450 nanometers, 500 nanometers, 600 nanometers, or 1 micrometer.
  • the first setting area of the substrate 1411 is used to set the thin film transistor 141, and the second setting area is used to set the photodiode 142.
  • the preparation process of the fingerprint identification module 14 is:
  • a third light-shielding layer 1419 is formed on the first setting area of the substrate 1411;
  • a patterned gate 1412 is formed on the third light-shielding layer 1419;
  • a patterned insulating layer 1413 is formed on the second arrangement area of the gate electrode 1412 and the substrate 1411;
  • the fourth step is to form a patterned active layer 1414 on the insulating layer 1413 corresponding to the first setting area;
  • the fifth step is to simultaneously form the source/drain 1415 on the active layer 1414 and the source/drain electrode layer 1421 on the insulating layer 1413;
  • a first passivation layer 1416 is formed on the source/drain 1415;
  • an N-type layer 1422, an intermediate layer 1423, and a P-type layer 1424 are sequentially formed on the source/drain electrode layer 1421 corresponding to the second setting region;
  • a second passivation layer 1417 and a first light-shielding layer 1418 are sequentially formed on the first passivation layer 1416;
  • a contact electrode 1425 is formed on the first light-shielding layer 1418 and the P-type layer 1424;
  • a patterned third passivation layer 1426 is formed on the contact electrode 1425;
  • a second light-shielding layer 1427 is formed on the third passivation layer 1426 corresponding to the second setting area.
  • FIG. 4 is a schematic structural diagram of an embodiment of a liquid crystal display device of the present application.
  • the liquid crystal display device 1000 of the embodiment of the present application includes a liquid crystal display panel 100 and a light source 200.
  • the light source 200 provides light to the liquid crystal display panel 100, and the light source 200 is located below the liquid crystal display panel 100.
  • the array substrate 11 is provided on the side facing the user.
  • the color filter substrate 12 is disposed on the side facing away from the user.
  • the liquid crystal 13 is provided between the array substrate 11 and the color filter substrate 12.
  • the fingerprint recognition module 14 is disposed on the side of the array substrate 11 facing the liquid crystal 13 to shorten the distance of the reflected light of the fingerprint to the photodiode.
  • the fingerprint recognition module 14 includes a thin film transistor and a photodiode for converting light energy into electrical energy.
  • the thin film transistor is electrically connected to the output end of the photodiode.
  • the fingerprint recognition module 14 is disposed in the display area of the liquid crystal display panel 100.
  • the liquid crystal display panel 100 of the present application by arranging the array substrate 11 provided with the fingerprint recognition module 14 at the end facing the user, the distance of the light reflected by the finger is shortened, the loss of light intensity is reduced, and the sensitivity of the fingerprint recognition module 14 is improved .
  • the fingerprint identification module 14 is disposed on the array substrate 11 so that the thin film transistor in the fingerprint identification module 14 and the thin film transistor on the array substrate 11 can be prepared under the same manufacturing process, saving the preparation time, thereby improving the preparation effectiveness. And the two share a substrate, saving material.
  • the structure and preparation method of the fingerprint identification module 14 are consistent with the structure and preparation method of the fingerprint identification module of the liquid crystal display panel described above. For details, please refer to the content of the fingerprint identification module of the above embodiment. The embodiment of the display device 1000 will not be repeated here.
  • the liquid crystal display panel and the liquid crystal display device of the present application shorten the distance of the light reflected by the finger and improve the fingerprint by arranging the array substrate provided with the fingerprint recognition module at the end facing the user Identify the sensitivity of the module; in addition, the first light-shielding layer and the second light-shielding layer are used to prevent the backlight light source from illuminating the photodiode, causing the photodiode to misjudge; the third light-shielding layer is used to prevent metal reflection, such as gate, source/drain Extreme. It solves the problem that the light in the existing liquid crystal display panel needs to pass from the array substrate through the color filter substrate to reach the finger. This leads to the technical problem that the light intensity detected by the optical path is very weak and the sensitivity is very poor.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Multimedia (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Liquid Crystal (AREA)
  • Image Input (AREA)

Abstract

一种液晶显示面板（100）及液晶显示装置（1000），其包括阵列基板（11）、彩膜基板（12）、液晶（13）和指纹识别模块（14），阵列基板（11）设置在面向用户的一侧；液晶（13）设置在阵列基板（11）和彩膜基板（12）之间；指纹识别模块（14）设置在阵列基板（11）面向液晶（13）的一侧；指纹识别模块（14）包括一薄膜晶体管（141）和用于将光能转换为电能的光电二极管（142），薄膜晶体管（141）电连接于光电二极管（142）的输出端。

Description

液晶显示面板及液晶显示装置 技术领域
本申请涉及一种显示技术，特别涉及一种液晶显示面板及液晶显示装置。
 背景技术
目前指纹解锁功能广泛的运用在生活中的显示产品上，常规的指纹解锁键一般放置于非显示区，全面显示已是未来发展的一个大趋势，面内指纹解锁功能将会越来越多的运用于产品中。面内指纹解锁最好的实现方式是光学指纹识别。在常规液晶显示产品中，如图1所示，光需要从阵列基板穿过彩膜基板达到手指，手指的反射光再从彩膜基板穿到阵列基板上的光学指纹识别模块，然后被光电二极管所检测到，这样的光路检测到的光强非常弱，灵敏性会很差。
 技术问题
本申请实施例提供一种液晶显示面板及液晶显示装置，以解决现有的液晶显示面板中光需要从阵列基板穿过彩膜基板达到手指，手指的反射光再从彩膜基板穿到阵列基板上的光学指纹识别模块，然后被光电二极管所检测到，这样导致光路检测到的光强非常弱，灵敏性很差的技术问题。
 技术解决方案
本申请实施例提供一种液晶显示面板，其包括：
阵列基板，设置在面向用户的一侧；
彩膜基板，设置在背向用户的一侧；
液晶，设置在所述阵列基板和所述彩膜基板之间；以及
指纹识别模块，设置在所述阵列基板面向所述液晶的一侧，以缩短指纹反射光照射到光电二极管的路程；
所述指纹识别模块包括一薄膜晶体管和用于将光能转换为电能的所述光电二极管，所述薄膜晶体管电连接于所述光电二极管的输出端；
所述薄膜晶体管包括基板和依次形成于所述基板面向所述彩膜基板一面上的栅极、绝缘层、有源层、源/漏极、第一钝化层、第二钝化层和第一遮光层；
所述光电二极管包括所述基板和依次形成于所述基板上的所述绝缘层、源/漏电极层、N型层、中间层、P型层、接触电极、第三钝化层和第二遮光层；
所述第一遮光层上依次形成有所述接触电极和所述第三钝化层；
所述源/漏极和所述源/漏电极层电性连接且同层设置，所述第一遮光层用于遮挡所述薄膜晶体管和部分无需光照的所述第二钝化层，所述第二遮光层用于遮挡所述光电二极管。
所述薄膜晶体管还包括一第三遮光层，所述第三遮光层设置在所述栅极和所述基板之间，所述第三遮光层用于所述薄膜晶体管和部分无需光照的所述第一钝化层；
所述中间层的材料为Si基、有机OPD和钙钛矿中的一种。
在本申请的液晶显示面板中，所述中间层为钙钛矿，所述中间层的厚度介于250纳米至3微米之间。
在本申请的液晶显示面板中，所述N型层是指一种或多种电子传输材料层。
在本申请的液晶显示面板中，所述P型层为空穴传输材料层，所述空穴传输材料为单种空穴传输化合物或单质材料，或两种或多种空穴传输化合物或单质材料的混合物。
在本申请的液晶显示面板中，所述中间层包括选自卤阴离子和硫族阴离子中的至少一种阴离子。
本申请实施例还提供一种液晶显示面板，其包括：
阵列基板，设置在面向用户的一侧；
彩膜基板，设置在背向用户的一侧；
液晶，设置在所述阵列基板和所述彩膜基板之间；以及
指纹识别模块，设置在所述阵列基板面向所述液晶的一侧，以缩短指纹反射光照射到光电二极管的路程；
所述指纹识别模块包括一薄膜晶体管和用于将光能转换为电能的所述光电二极管，所述薄膜晶体管电连接于所述光电二极管的输出端。
在本申请的液晶显示面板中，所述薄膜晶体管包括基板和依次形成于所述基板面向所述彩膜基板一面上的栅极、绝缘层、有源层、源/漏极、第一钝化层、第二钝化层和第一遮光层；
所述光电二极管包括所述基板和依次形成于所述基板上的所述绝缘层、源/漏电极层、N型层、中间层、P型层、接触电极、第三钝化层和第二遮光层；
所述第一遮光层上依次形成有所述接触电极和所述第三钝化层；
所述源/漏极和所述源/漏电极层电性连接且同层设置，所述第一遮光层用于遮挡所述薄膜晶体管和部分无需光照的所述第二钝化层，所述第二遮光层用于遮挡所述光电二极管。
在本申请的液晶显示面板中，所述薄膜晶体管还包括一第三遮光层，所述第三遮光层设置在所述栅极和所述基板之间，所述第三遮光层用于所述薄膜晶体管和部分无需光照的所述第一钝化层。
在本申请的液晶显示面板中，所述中间层的材料为Si基、有机OPD和钙钛矿中的一种。
在本申请的液晶显示面板中，所述中间层为钙钛矿，所述中间层的厚度介于250纳米至3微米之间。
本申请还涉及一种液晶显示装置，包括一液晶显示面板和光源，所述液晶显示面板包括：
阵列基板，设置在面向用户的一侧；
彩膜基板，设置在背向用户的一侧；
液晶，设置在所述阵列基板和所述彩膜基板之间；以及
指纹识别模块，设置在所述阵列基板面向所述液晶的一侧，以缩短指纹反射光照射到光电二极管的路程；
所述指纹识别模块包括一薄膜晶体管和用于将光能转换为电能的所述光电二极管，所述薄膜晶体管电连接于所述光电二极管的输出端。
在本申请的液晶显示装置中，所述薄膜晶体管包括基板和依次形成于所述基板面向所述彩膜基板一面上的栅极、绝缘层、有源层、源/漏极、第一钝化层、第二钝化层和第一遮光层；
所述光电二极管包括所述基板和依次形成于所述基板上的所述绝缘层、源/漏电极层、N型层、中间层、P型层、接触电极、第三钝化层和第二遮光层；
所述第一遮光层上依次形成有所述接触电极和所述第三钝化层；
所述源/漏极和所述源/漏电极层电性连接且同层设置，所述第一遮光层用于遮挡所述薄膜晶体管和部分无需光照的所述第二钝化层，所述第二遮光层用于遮挡所述光电二极管。
在本申请的液晶显示装置中，所述薄膜晶体管还包括一第三遮光层，所述第三遮光层设置在所述栅极和所述基板之间，所述第三遮光层用于所述薄膜晶体管和部分无需光照的所述第一钝化层。
在本申请的液晶显示装置中，所述中间层的材料为Si基、有机OPD和钙钛矿中的一种。
在本申请的液晶显示装置中，所述中间层为钙钛矿，所述中间层的厚度介于250纳米至3微米之间。
 有益效果
相较于现有技术的液晶显示面板，本申请的液晶显示面板和液晶显示装置通过将设置有指纹识别模块的阵列基板设置在面向用户的一端，从而缩短了手指反射光的路程，提高了指纹识别模块的灵敏度；另外，第一遮光层和第二遮光层用于防止背光光源照射到光电二极管，引起光电二极管的误判；第三遮光层用于防止金属反光，比如栅极、源/漏极等。解决了现有的液晶显示面板中光需要从阵列基板穿过彩膜基板达到手指，手指的反射光再从彩膜基板穿到阵列基板上的光学指纹识别模块，然后被光电二极管所检测到，这样导致光路检测到的光强非常弱，灵敏性很差的技术问题。
 附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。
图1为现有技术的液晶显示装置的结构示意图；
图2为本申请的液晶显示面板的实施例的结构示意图；
图3为本申请的液晶显示面板的实施例的指纹识别模块的结构示意图；
图4为本申请的液晶显示装置的实施例的结构示意图。
 本发明的实施方式
请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本申请具体实施例，其不应被视为限制本申请未在此详述的其它具体实施例。
请参照图2和图3，图2为本申请的液晶显示面板的实施例的结构示意图；图3为本申请的液晶显示面板的实施例的指纹识别模块的结构示意图。本实施例的液晶显示面板100，其包括阵列基板11、彩膜基板12、液晶13和指纹识别模块14。
阵列基板11设置在面向用户的一侧。彩膜基板12设置在背向用户的一侧。液晶13设置在阵列基板11和彩膜基板12之间。指纹识别模块14设置在阵列基板11面向液晶13的一侧，以缩短指纹反射光照射到光电二极管142的路程。
指纹识别模块14包括一薄膜晶体管141和用于将光能转换为电能的光电二极管142。薄膜晶体管141电连接于光电二极管142的输出端。
其中，指纹识别模块14设置在液晶显示面板100的显示区内。
本申请的液晶显示面板100通过将设置有指纹识别模块14的阵列基板11设置在面向用户的一端，从而缩短了手指反射光的路程，减少了光强的损失，提高了指纹识别模块14的灵敏度。
另外，将指纹识别模块14设置在阵列基板11上，使得指纹识别模块14中的薄膜晶体管141和阵列基板11上的薄膜晶体管可以在同一制程下进行制备，节省了制备的时间，从而提高了制备的效率。而且二者共用一块基板1411，节省了材料。
请参照图3，图3为本申请的液晶显示面板的实施例的指纹识别模块的结构示意图。在本液晶显示面板100的实施例中，薄膜晶体管141包括基板1411和依次形成于基板1411面向彩膜基板12一面上的栅极1412、绝缘层1413、有源层1414、源/漏极1415、第一钝化层1416、第二钝化层1417和第一遮光层1418。
光电二极管142包括基板1411和依次形成于基板1411上的绝缘层1413、源/漏电极层1421、N型层1422、中间层1423、P型层1424、接触电极1425、第三钝化层1426和第二遮光层1427。
第一遮光层1418上依次形成有接触电极1425和第三钝化层1426。
源/漏极1415和源/漏电极层1421电性连接且同层设置。第一遮光层1418用于遮挡薄膜晶体管141和部分无需光照的第二钝化层1417。第一遮光层1418用于薄膜晶体管141，避免背光源的光线照射入薄膜晶体管141。第二遮光层1427用于遮挡光电二极管142，避免背光源的光线照射到光电二极管142的中间层1423，而产生误判。
薄膜晶体管141还包括一第三遮光层1419。第三遮光层1419设置在栅极1412和基板1411之间。第三遮光层1419用于薄膜晶体管141和部分无需光照的第一钝化层1417。第三遮光层1419的作用在于防止外界光线照射到薄膜晶体管141的金属而产生反射光。
在液晶显示面板100的实施例中，中间层1423的材料为Si基、有机OPD和钙钛矿中的一种。
N型层1422是指一种或多种电子传输材料层。电子传输材料可以是单种电子传输化合物或单质材料，或两种或多种电子传输化合物或单质材料的混合物。电子传输化合物或单质材料可以是未掺杂的或掺杂一种或多种掺杂剂元素。
P型层1424是指空穴传输材料层，空穴传输材料可以是单种空穴传输化合物或单质材料，或两种或多种空穴传输化合物或单质材料的混合物。空穴传输化合物或单质材料可以是未掺杂的或掺杂一种或多种掺杂剂元素。
中间层1423为钙钛矿。中间层1423包括选自卤阴离子和硫族阴离子中的至少一种阴离子。且中间层1423包括第一阳离子、第二阳离子和至少一种上述的阴离子。其中，第一阳离子为有机阳离子，比如氢、氮或氧。第二阳离子是二价金属阳离子，可以为Ca 2+、Sr 2+、Cd 2+、Sn 2+和Pb 2+中的一种。
在本实施例中，钙钛矿选自CH 3NH 3PbCl 2I、CH 3NH 3PbBrCl 2、CH 3NH 3SnF 2Br和CH 3NH 3PbBrI 2。
中间层1423的厚度介于250纳米至3微米之间。可选的，中间层1423的厚度可以是300纳米、350纳米、450纳米、500纳米、600纳米或1微米。
在本实施例的液晶显示面板中，基板1411的第一设置区域用于设置薄膜晶体管141，第二设置区域用于设置光敏二极管142。指纹识别模块14的制备过程是：
第一步，在基板1411的第一设置区域上形成第三遮光层1419；
第二步，在第三遮光层1419上形成图案化的栅极1412；
第三步，在栅极1412和基板1411的第二设置区域上形成图案化的绝缘层1413；
第四步，在对应于第一设置区域的绝缘层1413上形成图案化的有源层1414；
第五步，同时在有源层1414上形成源/漏极1415和在绝缘层1413上形成源/漏电极层1421；
第六步，在源/漏极1415上形成第一钝化层1416；
第七步，在对应于第二设置区域的源/漏电极层1421依次形成N型层1422、中间层1423和P型层1424；
第八步，依次在第一钝化层1416上形成第二钝化层1417和第一遮光层1418；
第九步，在第一遮光层1418和P型层1424上形成接触电极1425；
第十步，在接触电极1425上形成图案化的第三钝化层1426；
最后，在对应于第二设置区域的第三钝化层1426上形成第二遮光层1427。
这样便完成了本实施例的指纹识别模块14的制备过程。
请参照图4，图4为本申请的液晶显示装置的实施例的结构示意图。本申请实施例的液晶显示装置1000，其包括一液晶显示面板100和光源200。光源200为液晶显示面板100提供光线，光源200位于液晶显示面板100的下方。
阵列基板11、彩膜基板12、液晶13和指纹识别模块14。
阵列基板11设置在面向用户的一侧。彩膜基板12设置在背向用户的一侧。液晶13设置在阵列基板11和彩膜基板12之间。指纹识别模块14设置在阵列基板11面向液晶13的一侧，以缩短指纹反射光照射到光电二极管的路程。
指纹识别模块14包括一薄膜晶体管和用于将光能转换为电能的光电二极管。薄膜晶体管电连接于光电二极管的输出端。
其中，指纹识别模块14设置在液晶显示面板100的显示区内。
本申请的液晶显示面板100通过将设置有指纹识别模块14的阵列基板11设置在面向用户的一端，从而缩短了手指反射光的路程，减少了光强的损失，提高了指纹识别模块14的灵敏度。
另外，将指纹识别模块14设置在阵列基板11上，使得指纹识别模块14中的薄膜晶体管和阵列基板11上的薄膜晶体管可以在同一制程下进行制备，节省了制备的时间，从而提高了制备的效率。而且二者共用一块基板，节省了材料。
在本液晶显示装置1000的实施例中，指纹识别模块14的结构和制备方法与上述液晶显示面板的指纹识别模块的结构和制备方法一致，具体请参照上述实施例的指纹识别模块的内容，液晶显示装置1000的实施例不再赘述。
相较于现有技术的液晶显示面板，本申请的液晶显示面板和液晶显示装置通过将设置有指纹识别模块的阵列基板设置在面向用户的一端，从而缩短了手指反射光的路程，提高了指纹识别模块的灵敏度；另外，第一遮光层和第二遮光层用于防止背光光源照射到光电二极管，引起光电二极管的误判；第三遮光层用于防止金属反光，比如栅极、源/漏极等。解决了现有的液晶显示面板中光需要从阵列基板穿过彩膜基板达到手指，手指的反射光再从彩膜基板穿到阵列基板上的光学指纹识别模块，然后被光电二极管所检测到，这样导致光路检测到的光强非常弱，灵敏性很差的技术问题。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (15)

  1. 一种液晶显示面板，其包括：
    阵列基板，设置在面向用户的一侧；
    彩膜基板，设置在背向用户的一侧；
    液晶，设置在所述阵列基板和所述彩膜基板之间；以及
    指纹识别模块，设置在所述阵列基板面向所述液晶的一侧，以缩短指纹反射光照射到光电二极管的路程；
    所述指纹识别模块包括一薄膜晶体管和用于将光能转换为电能的所述光电二极管，所述薄膜晶体管电连接于所述光电二极管的输出端；
    所述薄膜晶体管包括基板和依次形成于所述基板面向所述彩膜基板一面上的栅极、绝缘层、有源层、源/漏极、第一钝化层、第二钝化层和第一遮光层；
    所述光电二极管包括所述基板和依次形成于所述基板上的所述绝缘层、源/漏电极层、N型层、中间层、P型层、接触电极、第三钝化层和第二遮光层；
    所述第一遮光层上依次形成有所述接触电极和所述第三钝化层；
    所述源/漏极和所述源/漏电极层电性连接且同层设置，所述第一遮光层用于遮挡所述薄膜晶体管和部分无需光照的所述第二钝化层，所述第二遮光层用于遮挡所述光电二极管。
    所述薄膜晶体管还包括一第三遮光层，所述第三遮光层设置在所述栅极和所述基板之间，所述第三遮光层用于所述薄膜晶体管和部分无需光照的所述第一钝化层；
    所述中间层的材料为Si基、有机OPD和钙钛矿中的一种。
  2. 根据权利要求1所述的液晶显示面板，其中，所述中间层为钙钛矿，所述中间层的厚度介于250纳米至3微米之间。
  3. 根据权利要求1所述的液晶显示面板，其中，所述N型层是指一种或多种电子传输材料层。
  4. 根据权利要求1所述的液晶显示面板，其中，所述P型层为空穴传输材料层，所述空穴传输材料为单种空穴传输化合物或单质材料，或两种或多种空穴传输化合物或单质材料的混合物。
  5. 根据权利要求2所述的液晶显示面板，其中，所述中间层包括选自卤阴离子和硫族阴离子中的至少一种阴离子。
  6. 一种液晶显示面板，其包括：
    阵列基板，设置在面向用户的一侧；
    彩膜基板，设置在背向用户的一侧；
    液晶，设置在所述阵列基板和所述彩膜基板之间；以及
    指纹识别模块，设置在所述阵列基板面向所述液晶的一侧，以缩短指纹反射光照射到光电二极管的路程；
    所述指纹识别模块包括一薄膜晶体管和用于将光能转换为电能的所述光电二极管，所述薄膜晶体管电连接于所述光电二极管的输出端。
  7. 根据权利要求6所述的液晶显示面板，其中，所述薄膜晶体管包括基板和依次形成于所述基板面向所述彩膜基板一面上的栅极、绝缘层、有源层、源/漏极、第一钝化层、第二钝化层和第一遮光层；
    所述光电二极管包括所述基板和依次形成于所述基板上的所述绝缘层、源/漏电极层、N型层、中间层、P型层、接触电极、第三钝化层和第二遮光层；
    所述第一遮光层上依次形成有所述接触电极和所述第三钝化层；
    所述源/漏极和所述源/漏电极层电性连接且同层设置，所述第一遮光层用于遮挡所述薄膜晶体管和部分无需光照的所述第二钝化层，所述第二遮光层用于遮挡所述光电二极管。
  8. 根据权利要求7所述的液晶显示面板，其中，所述薄膜晶体管还包括一第三遮光层，所述第三遮光层设置在所述栅极和所述基板之间，所述第三遮光层用于所述薄膜晶体管和部分无需光照的所述第一钝化层。
  9. 根据权利要求7所述的液晶显示面板，其中，所述中间层的材料为Si基、有机OPD和钙钛矿中的一种。
  10. 根据权利要求9所述的液晶显示面板，其中，所述中间层为钙钛矿，所述中间层的厚度介于250纳米至3微米之间。
  11. 一种液晶显示装置，包括一液晶显示面板和光源，其中，所述液晶显示面板包括：
    阵列基板，设置在面向用户的一侧；
    彩膜基板，设置在背向用户的一侧；
    液晶，设置在所述阵列基板和所述彩膜基板之间；以及
    指纹识别模块，设置在所述阵列基板面向所述液晶的一侧，以缩短指纹反射光照射到光电二极管的路程；
    所述指纹识别模块包括一薄膜晶体管和用于将光能转换为电能的所述光电二极管，所述薄膜晶体管电连接于所述光电二极管的输出端。
  12. 根据权利要求11所述的液晶显示装置，其中，所述薄膜晶体管包括基板和依次形成于所述基板面向所述彩膜基板一面上的栅极、绝缘层、有源层、源/漏极、第一钝化层、第二钝化层和第一遮光层；
    所述光电二极管包括所述基板和依次形成于所述基板上的所述绝缘层、源/漏电极层、N型层、中间层、P型层、接触电极、第三钝化层和第二遮光层；
    所述第一遮光层上依次形成有所述接触电极和所述第三钝化层；
    所述源/漏极和所述源/漏电极层电性连接且同层设置，所述第一遮光层用于遮挡所述薄膜晶体管和部分无需光照的所述第二钝化层，所述第二遮光层用于遮挡所述光电二极管。
  13. 根据权利要求12所述的液晶显示装置，其中，所述薄膜晶体管还包括一第三遮光层，所述第三遮光层设置在所述栅极和所述基板之间，所述第三遮光层用于所述薄膜晶体管和部分无需光照的所述第一钝化层。
  14. 根据权利要求12所述的液晶显示装置，其中，所述中间层的材料为Si基、有机OPD和钙钛矿中的一种。
  15. 根据权利要求14所述的液晶显示装置，其中，所述中间层为钙钛矿，所述中间层的厚度介于250纳米至3微米之间。
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