CN105975136B - 显示基板及其制造方法和显示装置 - Google Patents

显示基板及其制造方法和显示装置 Download PDF

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Publication number
CN105975136B
CN105975136B CN201610513571.4A CN201610513571A CN105975136B CN 105975136 B CN105975136 B CN 105975136B CN 201610513571 A CN201610513571 A CN 201610513571A CN 105975136 B CN105975136 B CN 105975136B
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China
Prior art keywords
light
sensitive device
base plate
display base
blocks
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CN201610513571.4A
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CN105975136A (zh
Inventor
丁小梁
董学
吕敬
王海生
吴俊纬
刘英明
刘伟
许睿
王鹏鹏
韩艳玲
曹学友
张平
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to CN201610513571.4A priority Critical patent/CN105975136B/zh
Publication of CN105975136A publication Critical patent/CN105975136A/zh
Priority to PCT/CN2017/089526 priority patent/WO2018001163A1/zh
Priority to US15/936,830 priority patent/US10585304B2/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G06F3/0421—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means by interrupting or reflecting a light beam, e.g. optical touch-screen
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    • G06V10/14—Optical characteristics of the device performing the acquisition or on the illumination arrangements
    • G06V10/143—Sensing or illuminating at different wavelengths
    • G—PHYSICS
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    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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Abstract

本发明公开了一种显示基板及其制造方法和显示装置。该显示基板包括：第一衬底基板和位于所述第一衬底基板上方的遮挡图形、第一电极层和依次排列的多个检测单元，每个检测单元包括开关管和与开关管连接的光敏器件，光敏器件还与第一电极层连接，所述遮挡图形覆盖所述开关管，所述光敏器件位于所述遮挡图形的下方，所述遮挡图形用于遮挡照射光以及将检测光透射至光敏器件。本发明实施例将光线分为照射光和检测光，设置的遮挡图形既能保证检测光照射至光敏器件，又能通过遮挡照射光避免了照射光照射至开关管上，从而避免了开关管对照射光进行反射，进而避免了显示装置出现反光现象。

Description

显示基板及其制造方法和显示装置
技术领域
本发明涉及显示技术领域，特别涉及一种显示基板及其制造方法和显示装置。
背景技术
近年来，随着技术的高速发展，具有生物识别功能的移动产品逐渐进入人们的生活工作中，指纹技术凭借着其唯一身份特性，备受人们的重视。基于硅基工艺的按压式与滑动式指纹识别技术已经整合入移动产品中，未来人们关注的核心是显示领域内的指纹识别技术。
现有技术中，显示装置包括背光源、阵列基板和彩膜基板，阵列基板包括薄膜晶体管和光敏二极管，彩膜基板包括黑矩阵图形和彩色矩阵图形。背光源发出的白光照射到手指上，手指将白光发射至光敏二极管，光敏二极管将检测光转换为电流信号，以通过电流信号判断出发生触摸动作的位置。
但是，现有技术中存在如下技术问题：
黑矩阵图形上与光敏二极管对应的位置设置有开孔结构，使得手指反射的白光能够通过开孔结构照射到光敏二极管上。为了保证手指反射的白光能够照射到光敏二极管上，开孔结构需要具备较大的尺寸，这样光线会照射到位于光敏二极管下方的薄膜晶体管的漏极上，由于漏极的材料是金属，因此漏极会对光线进行反射，从而使得显示装置出现反光现象。
发明内容
针对背景技术中的问题，本发明提供一种显示基板及其制造方法和显示装置，用于避免显示装置出现反光现象。
本发明提供了一种显示基板，包括：第一衬底基板和位于所述第一衬底基板上方的遮挡图形、第一电极层和依次排列的多个检测单元，每个检测单元包括开关管和与开关管连接的光敏器件，光敏器件还与第一电极层连接，所述遮挡图形覆盖所述开关管，所述光敏器件位于所述遮挡图形的下方，所述遮挡图形用于遮挡照射光以及将检测光透射至光敏器件。
可选地，所述开关管为薄膜晶体管，所述薄膜晶体管包括栅极、有源层、源极和漏极，所述光敏器件位于所述漏极之上。
可选地，所述光敏器件包括有效区域和无效区域，所述漏极位于所述光敏器件的有效区域的下方，所述光敏器件的无效区域用于使所述检测光透过。
可选地，所述光敏器件之上设置有连接图形，部分所述连接图形位于所述遮挡图形之下，其余部分连接图形的上方形成有第一过孔，第一电极层填充于第一过孔中以与暴露出的连接图形连接。
可选地，所述遮挡图形为黑矩阵图形。
可选地，所述光敏器件为光敏二极管。
可选地，所述检测光为不可见光。
可选地，所述检测光为红外光。
本发明提供了一种显示装置，包括：背光源以及相对设置的对置基板和显示基板，所述背光源位于所述显示基板的远离对置基板的一侧，所述显示基板包括第一衬底基板和位于所述第一衬底基板上方的第一电极层和依次排列的多个检测单元，每个检测单元包括开关管和与开关管连接的光敏器件，光敏器件还与第一电极层连接，所述背光源用于发出照射光和检测光；
所述对置基板包括遮挡图形或者所述显示基板包括遮挡图形，所述遮挡图形覆盖所述开关管，所述光敏器件位于所述遮挡图形的下方，所述遮挡图形用于遮挡照射光以及将检测光透射至光敏器件。
可选地，所述显示基板包括遮挡图形时，所述光敏器件之上设置有连接图形，部分所述连接图形位于所述遮挡图形之下，其余部分连接图形的上方形成有第一过孔，第一电极层填充于第一过孔中以与暴露出的连接图形连接。
可选地，所述开关管为薄膜晶体管，所述薄膜晶体管包括栅极、有源层、源极和漏极，所述光敏器件位于所述漏极之上。
可选地，所述光敏器件包括有效区域和无效区域，所述漏极位于所述光敏器件的有效区域的下方，所述光敏器件的无效区域用于使所述检测光透过。
可选地，所述光敏器件之上设置有连接图形，部分所述连接图形位于所述遮挡图形之下，其余部分连接图形的上方形成有第一过孔，第一电极层填充于第一过孔中以与暴露出的连接图形连接。
可选地，所述遮挡图形为黑矩阵图形。
可选地，所述光敏器件为光敏二极管。
可选地，所述检测光为不可见光。
可选地，所述检测光为红外光。
可选地，所述背光源包括间隔设置的照射光源和检测光源，照射光源用于发出照射光，所述检测光源用于发出检测光。
本发明提供了一种显示基板的制造方法，包括：
在第一衬底基板的上方形成遮挡图形、第一电极层和依次排列的多个检测单元，每个检测单元包括开关管和与开关管连接的光敏器件，光敏器件还与第一电极层连接，所述遮挡图形覆盖所述开关管，所述光敏器件位于所述遮挡图形的下方，所述遮挡图形用于遮挡照射光以及将检测光透射至光敏器件。
本发明具有以下有益效果：
本发明提供的显示基板及其制造方法和显示装置的技术方案中，遮挡图形覆盖开关管，光敏器件位于遮挡图形的下方，遮挡图形用于遮挡照射光以及将检测光透射至光敏器件，本发明实施例将光线分为照射光和检测光，设置的遮挡图形既能保证检测光照射至光敏器件，又能通过遮挡照射光避免了照射光照射至开关管上，从而避免了开关管对照射光进行反射，进而避免了显示装置出现反光现象。
附图说明
图1为本发明实施例一提供的一种显示基板的结构示意图；
图2为图1中显示基板的等效电路图；
图3为本发明实施例二提供的一种显示装置的结构示意图；
图4为本发明实施例三提供的一种显示装置的结构示意图；
图5为本发明实施例四提供的一种显示基板的制造方法的流程图；
图6a为实施例四中形成栅极和栅线的示意图；
图6b为实施例四中形成第一绝缘层的示意图；
图6c为实施例四中形成有源层的示意图；
图6d为实施例四中形成源漏极层的示意图；
图6e为实施例四中形成第一保护层的示意图；
图6f为实施例四中形成光敏二极管的示意图；
图6g为实施例四中形成遮挡图形的示意图；
图6h为实施例四中形成第二保护层的示意图；
图6i为实施例四中形成第一电极层的示意图；
图6j为实施例四中形成第二保护层的示意图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图对本发明提供的显示基板及其制造方法和显示装置进行详细描述。
图1为本发明实施例一提供的一种显示基板的结构示意图，图2为图1中显示基板的等效电路图，如图1和图2所示，该显示基板包括：第一衬底基板11和位于第一衬底基板11上方的遮挡图形12、第一电极层13和依次排列的多个检测单元14，每个检测单元14包括开关管和与开关管连接的光敏器件，光敏器件还与第一电极层13连接，遮挡图形12覆盖开关管，光敏器件位于遮挡图形12的下方，遮挡图形12用于遮挡照射光以及将检测光透射至光敏器件。
本实施例中，第一衬底基板11上方形成有多条栅线、多条数据线和多条信号输出线，多条栅线和多条信号输出线限定出检测单元14。优选地，信号输出线和数据线同层设置，且信号输出线和数据线平行。图2中示出了栅线Gate1、Gate2、Gate3和Gate4，图2中还示出了信号输出线S line1、S line2和S line3，数据线未具体画出。
本实施例中，开关管为薄膜晶体管T，薄膜晶体管T包括栅极15、有源层16、源极17和漏极18，光敏器件位于漏极18之上。本实施例中，栅线和栅极15同层设置，数据线、信号输出线、源极17和漏极18同层设置。其中，数据线未具体画出。
进一步地，该显示基板还包括第一绝缘层19，第一绝缘层19位于栅极15之上，该第一绝缘层19覆盖整个第一衬底基板11。有源层16位于第一绝缘层19之上。源极17部分位于有源层16之上且部分位于第一绝缘层19之上。漏极18部分位于有源层16之上且部分位于第一绝缘层19之上。
进一步地，该显示基板还包括公共电极线20，公共电极线20与源极17和漏极18同层设置。公共电极线20位于第一绝缘层19之上。
进一步地，该显示基板还包括第一保护层21，第一保护层21位于源极17、漏极18和公共电极线20之上，该第一保护层21覆盖整个第一衬底基板11。
本实施例中，光敏器件为光敏二极管D。该光敏二极管D为PIN结。具体地，光敏二极管D可包括N型硅材料层22、I型硅材料层23和P型硅材料层24，I型硅材料层23位于N型硅材料层22之上，P型硅材料层24位于I型硅材料层23之上。第一保护层21上设置有第二过孔25，第二过孔25位于漏极18的上方以暴露出部分漏极18，光敏器件位于第二过孔25中以实现与漏极18连接。具体地，光敏二极管D中至少N型硅材料层22位于第二过孔25中以使N型硅材料层22位于漏极18之上，从而实现N型硅材料层22与漏极18连接。
进一步地，光敏器件之上设置有连接图形26，部分连接图形26位于遮挡图形12之下，其余部分连接图形26的上方形成有第一过孔27，第一电极层13填充于第一过孔27中以与暴露出的连接图形26连接。具体地，连接图形26位于P型硅材料层24之上以实现与P型硅材料层24连接。
进一步地，该显示基板还包括第二绝缘层28，该第二绝缘层28位于遮挡图形12之上，且该第二绝缘层28覆盖整个第一衬底基板11。第一电极层13位于第二绝缘层28之上。第一过孔27设置于第二绝缘层28上。第一保护层21和第二绝缘层28上设置有第三过孔29，第三过孔29位于公共电极线20的上方以暴露出部分公共电极线20，第一电极层13填充于第三过孔29中以与公共电极线20连接。
进一步地，该显示基板还包括第二保护层30，第二保护层30位于第一电极层13之上，且覆盖整个第一衬底基板11。
进一步地，该显示基板还包括第二电极层31，第二电极层31位于第二保护层30之上。
本实施例中，连接图形26通过第一电极层13与公共电极线20连接，这样公共电极线20上加载的公共电极信号可通过第一电极层13施加到光敏二极管D的P型硅材料层24上。第一电极层13为公共电极层，第二电极层31为像素电极层。优选地，第一电极层13的材料包括但不限于ITO，第二电极层31的材料包括但不限于ITO，连接图形26的材料包括但不限于ITO。
本实施例中，遮挡图形12用于遮挡照射光以及将检测光透射至光敏器件，因此检测光需要为能够透过遮挡图形12的光线。优选地，遮挡图形12为黑矩阵图形，检测光为不可见光，例如：红外光。在实际应用中，检测光还可以为其它波长的光线，此处不再一一列举。
本实施例中，光敏器件包括有效区域和无效区域，漏极18位于光敏器件的有效区域的下方，光敏器件的无效区域用于使检测光透过。漏极18遮挡了光敏器件的有效区域，由于检测光无法穿透漏极18，从而使得从下方照射的检测光无法照射至光敏器件的有效区域。
如图2所示，光敏二极管D的第一极连接至公共电极层，其中，光敏二极管D的第一极为P型硅材料层24，公共电极层为第一电极层13；光敏二极管D的第二极连接至薄膜晶体管T的第一极，其中，光敏二极管D的第二极为N型硅材料层22，薄膜晶体管T的第一极为漏极18；薄膜晶体管T的第二极连接至信号输出线，其中，薄膜晶体管T的第二极为源极17；薄膜晶体管T的控制极与栅线连接。
进一步地，该显示基板还包括依次排列的多个彩色色阻，例如该彩色色阻可包括红色色阻、绿色色阻或者蓝色色阻，则第一衬底基板11的上方设置有依次排列的红色色阻、绿色色阻和蓝色色阻，其中，彩色色阻在图1中未具体画出。
进一步地，该显示基板还包括显示薄膜晶体管，多条栅线和多条数据线限定出像素单元，则显示薄膜晶体管和第二电极层31位于像素单元中。其中，显示薄膜晶体管在图1中未具体画出。
本实施例中，显示基板为彩膜阵列基板(color filter on array，简称：COA)。
本实施例提供的显示基板的技术方案中，遮挡图形覆盖开关管，光敏器件位于遮挡图形的下方，遮挡图形用于遮挡照射光以及将检测光透射至光敏器件，本实施例将光线分为照射光和检测光，设置的遮挡图形既能保证检测光照射至光敏器件，又能通过遮挡照射光避免了照射光照射至开关管上，从而避免了开关管对照射光进行反射，进而避免了显示装置出现反光现象。本实施例中，遮挡图形为黑矩阵图形，黑矩阵图形和薄膜晶体管均设置于显示基板一侧，从而提高了黑矩阵图形和薄膜晶体管中的源极和漏极之间的对位精度。本实施例中，第一电极层位于开关管的上方，该第一电极层对开关管中的结构进行了遮挡，对手指的电容的影响进行了屏蔽，从而有利于光敏器件生成的电流信号的读取。
图3为本发明实施例二提供的一种显示装置的结构示意图，如图3所示，该显示装置包括：背光源1以及相对设置的对置基板2和显示基板3，背光源1位于显示基板3的远离对置基板2的一侧。其中，显示基板3可采用上述实施例一提供的显示基板，此处不再重复描述。
对置基板2和显示基板3之间还设置有液晶层4。
本实施例中，显示基板3为COA，则对置基板2可以为玻璃基板或石英基板。
本实施例中，背光源1可包括间隔设置的照射光源和检测光源，照射光源用于发出照射光，检测光源用于发出检测光。如图3所示，实线箭头所示为照射光，虚线箭头所示为检测光。优选地，照射光源为白光LED，照射光可以为白光；检测光源为红外LED，检测光可以为红外光。
如图2和图3所示，手指包括谷位置和脊位置，当手指发生触摸动作时，背光源1发出的检测光透过显示基板3中的光敏二极管的无效区域照射到手指上，手指将检测光反射回显示基板3。当检测光照射到遮挡图形12上时，遮挡图形12将反射回显示基板3的检测光透射至光敏二极管D。光敏二极管D将检测光转换为电流信号，并通过开启的薄膜晶体管T将电流信号输出至信号输出线。信号输出线将该电流信号输出，该电流信号可用于判断出发生触摸动作的位置为谷位置或者脊位置。手指的谷位置和脊位置之间存在差异，因此谷位置和脊位置反射的检测光的光强是不同的，不同光强的检测光照射到光敏二极管D时光敏二极管D产生的电流信号也是不同的，所以可通过电流信号判断出发生触摸动作的位置为谷位置或者脊位置。
本实施例中，光敏器件包括有效区域和无效区域，漏极18位于光敏器件的有效区域的下方，光敏器件的无效区域用于使检测光透过。漏极18遮挡了光敏器件的有效区域，由于检测光无法穿透漏极18，从而使得从下方照射的检测光无法照射至光敏器件的有效区域。
本实施例中，检测光为不可见光。被手指反射回的检测光照射至漏极18上时，会被漏极18反射，但是由于检测光为不可见光，人眼对漏极18反射的检测光不可见，因此被漏极18反射的检测光不会造成反光现象。
本实施例提供的显示装置的技术方案中，遮挡图形覆盖开关管，光敏器件位于遮挡图形的下方，遮挡图形用于遮挡照射光以及将检测光透射至光敏器件，本实施例将光线分为照射光和检测光，设置的遮挡图形既能保证检测光照射至光敏器件，又能通过遮挡照射光避免了照射光照射至开关管上，从而避免了开关管对照射光进行反射，进而避免了显示装置出现反光现象。本实施例中，遮挡图形为黑矩阵图形，黑矩阵图形和薄膜晶体管均设置于显示基板一侧，从而提高了黑矩阵图形和薄膜晶体管中的源极和漏极之间的对位精度。本实施例中，第一电极层位于开关管的上方，该第一电极层对开关管中的结构进行了遮挡，对手指的电容的影响进行了屏蔽，从而有利于光敏器件生成的电流信号的读取。
图4为本发明实施例三提供的一种显示装置的结构示意图，如图4和图2所示，该显示装置包括背光源1以及相对设置的对置基板6和显示基板7，背光源1位于显示基板7的远离对置基板6的一侧，显示基板7包括第一衬底基板11和位于第一衬底基板11上方的第一电极层13和依次排列的多个检测单元14，每个检测单元14包括开关管和与开关管连接的光敏器件，光敏器件还与第一电极层13连接，背光源1用于发出照射光和检测光，对置基板6包括第二衬底基板31和设置于第二衬底基板31上方的遮挡图形32，遮挡图形32覆盖开关管，光敏器件位于遮挡图形32的下方，遮挡图形32用于遮挡照射光以及将检测光透射至光敏器件。
本实施例与上述实施例二的区别在于：本实施例中遮挡图形32位于对置基板6中；第二绝缘层28位于连接图形26之上；本实施例中，漏极18位于整个光敏器件的下方，或者，漏极18也可位于光敏器件的有效区域的下方(此种情况未具体画出)；本实施例中，检测光可以从未设置有薄膜晶体管和公共电极线等能够遮挡检测光的区域穿过，以到达手指；本实施例中，对显示基板的其余结构的描述可参见上述实施例一，此处不再赘述。
本实施例中，对置基板6中的遮挡图形32与开关管和光敏器件对应设置，因此覆盖开关管和光敏器件。由于检测光能够透过遮挡图形32，因此被手指反射回的检测光能够透过遮挡图形32到达光敏器件。
本实施例中，对置基板6和显示基板7之间还设置有液晶层4。
本实施例中，显示基板7为阵列基板，则对置基板6可以为彩膜基板。
本实施例中，背光源1可包括间隔设置的照射光源和检测光源，照射光源用于发出照射光，检测光源用于发出检测光。如图3所示，实线箭头所示为照射光，虚线箭头所示为检测光。优选地，照射光源为白光LED，照射光可以为白光；检测光源为红外LED，检测光可以为红外光。
本实施例中，遮挡图形32用于遮挡照射光以及将检测光透射至光敏器件，因此检测光需要为能够透过遮挡图形32的光线。优选地，遮挡图形32为黑矩阵图形，检测光为红外光。在实际应用中，检测光还可以为其它波长的光线，此处不再一一列举。
如图2和图4所示，手指包括谷位置和脊位置，当手指发生触摸动作时，背光源1发出的检测光透过显示基板3中薄膜晶体管和公共电极线20之间的区域以及遮挡图形12照射到手指上，手指对检测光进行反射，反射的检测光透过遮挡图形12返回至显示基板3中的光敏二极管D上，光敏二极管D将检测光转换为电流信号，并通过开启的薄膜晶体管T将电流信号输出至信号输出线。信号输出线将该电流信号输出，该电流信号可用于判断出发生触摸动作的位置为谷位置或者脊位置。手指的谷位置和脊位置之间存在差异，因此谷位置和脊位置反射的检测光的光强是不同的，不同光强的检测光照射到光敏二极管D时光敏二极管D产生的电流信号也是不同的，所以可通过电流信号判断出发生触摸动作的位置为谷位置或者脊位置。
本实施例中，漏极18位于光敏器件的下方。漏极18遮挡了光敏器件，由于检测光无法穿透漏极18，从而使得从下方照射的检测光无法照射至光敏器件上。
本实施例提供的显示装置的技术方案中，遮挡图形覆盖开关管，光敏器件位于遮挡图形的下方，遮挡图形用于遮挡照射光以及将检测光透射至光敏器件，本实施例将光线分为照射光和检测光，设置的遮挡图形既能保证检测光照射至光敏器件，又能通过遮挡照射光避免了照射光照射至开关管上，从而避免了开关管对照射光进行反射，进而避免了显示装置出现反光现象。
本发明实施例四提供了一种显示基板的制造方法，该方法包括：在第一衬底基板的上方形成遮挡图形、第一电极层和依次排列的多个检测单元，每个检测单元包括开关管和与开关管连接的光敏器件，光敏器件还与第一电极层连接，所述遮挡图形覆盖所述开关管，所述光敏器件位于所述遮挡图形的下方，所述遮挡图形用于遮挡照射光以及将检测光透射至光敏器件。
下面通过图5对实施例四中的显示基板的制造方法进行详细描述。图5为本发明实施例四提供的一种显示基板的制造方法的流程图，如图5所示，该方法包括：
步骤101、在第一衬底基板之上形成栅极和栅线。
图6a为实施例四中形成栅极和栅线的示意图，如图6a所示，通过构图工艺在第一衬底基板11之上形成栅极15和栅线，其中栅线未具体示出。
步骤102、在栅极和栅线之上形成第一绝缘层。
图6b为实施例四中形成第一绝缘层的示意图，如图6b所示，在栅极15和栅线之上形成第一绝缘层19，该第一绝缘层19覆盖第一衬底基板11。
步骤103、在第一绝缘层之上形成有源层。
图6c为实施例四中形成有源层的示意图，如图6c所示，通过构图工艺在第一绝缘层19之上形成有源层16。
步骤104、在完成步骤103的第一衬底基板上形成源极、漏极、数据线、公共电极线和信号输出线。
图6d为实施例四中形成源漏极层的示意图，如图6d所示，通过构图工艺在完成步骤103的第一衬底基板11上形成源极17、漏极18、数据线、公共电极线20和信号输出线，其中，数据线和信号输出线未具体画出。
步骤105、在完成步骤104的第一衬底基板上形成第一保护层以及在第一保护层上形成第二过孔。
图6e为实施例四中形成第一保护层的示意图，如图6e所示，在完成步骤104的第一衬底基板11上沉积第一保护层21，并通过构图工艺在第一保护层21上形成第二过孔25。
步骤106、在第一保护层上形成光敏二极管和连接图形。
图6f为实施例四中形成光敏二极管的示意图，如图6f所示，通过构图工艺在第一保护层21上光敏二极管D以及通过构图工艺在光敏二极管D之上形成连接图形26，光敏二极管D包括N型硅材料层22、I型硅材料层23和P型硅材料层24，I型硅材料层23位于N型硅材料层22之上，P型硅材料层24位于I型硅材料层23之上。
步骤107、在完成步骤106的第一衬底基板之上形成遮挡图形。
图6g为实施例四中形成遮挡图形的示意图，如图6g所示，通过构图工艺在完成步骤106的第一衬底基板11之上形成遮挡图形12。遮挡图形12覆盖薄膜晶体管T，光敏二极管D位于遮挡图形12的下方。本实施例中，遮挡图形为黑矩阵图形。
步骤108、在完成步骤107的第一衬底基板之上形成第二绝缘层，在第二绝缘层上形成第一过孔以及在第一保护层和第二绝缘层上形成第三过孔。
图6h为实施例四中形成第二保护层的示意图，如图6h所示，在完成步骤107的第一衬底基板11之上沉积第二绝缘层28，并通过构图工艺在第二绝缘层28上形成第一过孔27以及在第一保护层21和第二绝缘层28上形成第三过孔29。
步骤109、在完成步骤108的第一衬底基板之上形成第一电极层。
图6i为实施例四中形成第一电极层的示意图，如图6i所示，在完成步骤108的第一衬底基板11之上形成第一电极层13，第一电极层13填充于第一过孔27中以与连接图形26连接，第一电极层13填充于第三过孔29中以与公共电极线20连接。
步骤110、在第一电极层之上形成第二保护层。
图6j为实施例四中形成第二保护层的示意图，如图6j所示，在第一电极层13之上沉积第二保护层30，第二保护层30覆盖整个第一衬底基板11。
步骤111、在第二保护层之上形成第二电极层。
如图1所示，通过构图工艺在第二保护层30之上形成第二电极层13。
可选地，在步骤107和步骤108之间还包括：在完成步骤107的第一衬底基板之上形成依次排列的多个彩色色阻，例如该彩色色阻可包括红色色阻、绿色色阻或者蓝色色阻。
本实施例提供的显示基板的制造方法可用于制造上述实施例一的显示基板。
本实施例提供的显示基板的制造方法的技术方案中，遮挡图形覆盖开关管，光敏器件位于遮挡图形的下方，遮挡图形用于遮挡照射光以及将检测光透射至光敏器件，本实施例将光线分为照射光和检测光，设置的遮挡图形既能保证检测光照射至光敏器件，又能通过遮挡照射光避免了照射光照射至开关管上，从而避免了开关管对照射光进行反射，进而避免了显示装置出现反光现象。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (13)

1.一种显示基板，其特征在于，包括：第一衬底基板和位于所述第一衬底基板上方的遮挡图形、第一电极层和依次排列的多个检测单元，每个检测单元包括开关管和与开关管连接的光敏器件，光敏器件还与第一电极层连接，所述遮挡图形覆盖所述开关管，所述光敏器件位于所述遮挡图形的下方，所述遮挡图形用于遮挡照射光以及将检测光透射至光敏器件。
2.根据权利要求1所述的显示基板，其特征在于，所述开关管为薄膜晶体管，所述薄膜晶体管包括栅极、有源层、源极和漏极，所述光敏器件位于所述漏极之上。
3.根据权利要求2所述的显示基板，其特征在于，所述光敏器件包括有效区域和无效区域，所述漏极位于所述光敏器件的有效区域的下方，所述光敏器件的无效区域用于使所述检测光透过。
4.根据权利要求1所述的显示基板，其特征在于，所述光敏器件之上设置有连接图形，部分所述连接图形位于所述遮挡图形之下，其余部分连接图形的上方形成有第一过孔，第一电极层填充于第一过孔中以与暴露出的连接图形连接。
5.根据权利要求1至4任一所述的显示基板，其特征在于，所述遮挡图形为黑矩阵图形。
6.根据权利要求1至4任一所述的显示基板，其特征在于，所述光敏器件为光敏二极管。
7.根据权利要求1至4任一所述的显示基板，其特征在于，所述检测光为不可见光。
8.根据权利要求7所述的显示基板，其特征在于，所述检测光为红外光。
9.一种显示装置，其特征在于，包括：背光源以及相对设置的对置基板和显示基板，所述背光源位于所述显示基板的远离对置基板的一侧，所述显示基板包括第一衬底基板和位于所述第一衬底基板上方的第一电极层和依次排列的多个检测单元，每个检测单元包括开关管和与开关管连接的光敏器件，光敏器件还与第一电极层连接，所述背光源用于发出照射光和检测光；
所述对置基板包括第二衬底基板和设置于第二衬底基板上方的遮挡图形或者所述显示基板包括遮挡图形，所述遮挡图形覆盖所述开关管，所述光敏器件位于所述遮挡图形的下方，所述遮挡图形用于遮挡照射光以及将检测光透射至光敏器件。
10.根据权利要求9所述的显示装置，其特征在于，所述显示基板包括遮挡图形时，所述光敏器件之上设置有连接图形，部分所述连接图形位于所述遮挡图形之下，其余部分连接图形的上方形成有第一过孔，第一电极层填充于第一过孔中以与暴露出的连接图形连接。
11.根据权利要求9所述的显示装置，其特征在于，所述显示基板采用权利要求2至8任一所述的显示基板。
12.根据权利要求9所述的显示装置，其特征在于，所述背光源包括间隔设置的照射光源和检测光源，照射光源用于发出照射光，所述检测光源用于发出检测光。
13.一种显示基板的制造方法，其特征在于，包括：
在第一衬底基板的上方形成遮挡图形、第一电极层和依次排列的多个检测单元，每个检测单元包括开关管和与开关管连接的光敏器件，光敏器件还与第一电极层连接，所述遮挡图形覆盖所述开关管，所述光敏器件位于所述遮挡图形的下方，所述遮挡图形用于遮挡照射光以及将检测光透射至光敏器件。
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