WO2020103748A1 - Chip packaging structure and method - Google Patents
Chip packaging structure and methodInfo
- Publication number
- WO2020103748A1 WO2020103748A1 PCT/CN2019/118170 CN2019118170W WO2020103748A1 WO 2020103748 A1 WO2020103748 A1 WO 2020103748A1 CN 2019118170 W CN2019118170 W CN 2019118170W WO 2020103748 A1 WO2020103748 A1 WO 2020103748A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- chip
- encapsulation layer
- plastic encapsulation
- electrical contact
- packaging
- Prior art date
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000005538 encapsulation Methods 0.000 claims description 91
- 238000001746 injection moulding Methods 0.000 claims description 6
- 238000010329 laser etching Methods 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 239000003566 sealing material Substances 0.000 claims description 2
- 238000000465 moulding Methods 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present application relates to the field of chip packaging technology, for example, to a chip packaging structure and packaging method.
- the main component of the electronic device to realize the preset function is the chip.
- the integration of the chip is getting higher and higher, the function of the chip is getting stronger, and the size of the chip is getting smaller and smaller, so the chip needs
- a packaging structure is formed, so that the chip is electrically connected to an external circuit.
- the present application discloses a chip packaging structure and a packaging method, which can form a chip packaging structure with a simple structure and facilitate the electrical connection between the chip and an external circuit.
- a packaging structure of a chip includes:
- a package substrate including opposite first surfaces and second surfaces, through holes penetrating the first surface and the second surface, the second surface is provided with a first electrical contact end, the first An electrical contact is used for electrical connection with external circuits;
- a first chip provided in the through hole the first chip having opposite front and back sides, the front side of which has a chip functional unit and a pad electrically connected to the chip functional unit, the pad and the The first electrical contact end is electrically connected; its rear side is close to the second surface, its front side is close to the first surface, and its front side exposes the through hole;
- a first plastic encapsulation layer covers the first surface, fills the through hole, and exposes the chip functional unit;
- a second plastic encapsulation layer covering the second surface, the back surface of the first chip, and the first plastic encapsulation layer in the through hole.
- This application also provides a chip packaging method, including:
- a base is provided.
- the base includes a plurality of packaging substrates with a cutting channel between adjacent packaging substrates.
- the packaging substrate includes opposite first surfaces and second surfaces that extend through the first surfaces and the A through hole on the second surface, the second surface is provided with a first electrical contact end, the first electrical contact end is used for electrical connection with an external circuit;
- a first chip is provided in the through hole, the first chip has opposite front and back sides, the front side has a chip functional unit and a pad electrically connected to the functional unit, the pad and the first The electrical contact ends are electrically connected; the back surface is close to the second surface, the front surface is close to the first surface, and the front surface exposes the through hole;
- first plastic encapsulation layer Forming a first plastic encapsulation layer, the first plastic encapsulation layer covering the first surface, filling the through hole, and exposing the chip functional unit;
- the first plastic encapsulation layer, the substrate, and the second plastic encapsulation layer are divided based on the cutting channel.
- FIG. 1 is a schematic diagram of a chip packaging structure provided by an embodiment of the present application.
- FIG. 2 is a front plan view of the packaging structure shown in FIG. 1;
- FIG. 3 is a schematic diagram of another chip packaging structure provided by an embodiment of the present application.
- FIG. 4 is a front plan view of the package dismissal shown in FIG. 3;
- 5 to 14 are schematic flowcharts of a packaging method provided by an embodiment of the present application.
- 15-21 are schematic flowcharts of another packaging method provided by an embodiment of the present application.
- FIG. 1 is a schematic diagram of a chip packaging structure provided by an embodiment of the present application
- FIG. 2 is a front plan view of the packaging structure shown in FIG. 1.
- the packaging structure includes: a packaging substrate 12 including opposite first and second surfaces, a through hole T penetrating through the first surface and the second surface, the second surface being provided with a An electrical contact 121, the first electrical contact 121 is used for electrical connection with an external circuit; a first chip 11 disposed in the through hole, the first chip 11 has opposite front and back sides, the front side It has a chip functional unit and a pad 112 electrically connected to the chip functional unit, the pad 112 is electrically connected to the first electrical contact 121, its back is close to the second surface, and its front is close to the first One surface, and the front surface of the through hole T is exposed.
- the chip functional unit of the first chip 11 is not shown in FIG. 1.
- the first plastic encapsulation layer 13 is not shown in FIG. 2 in order to clearly illustrate the front structure of the packaging structure.
- the packaging structure further includes a first plastic encapsulation layer 13 and a second plastic encapsulation layer 14.
- the first molding layer 13 covers the first surface, fills the through hole T, and exposes the chip functional unit.
- the second plastic encapsulation layer 14 covers the second surface, the back surface of the first chip 11 and the first plastic encapsulation layer 13 in the through hole T.
- a package substrate 12 having a through hole T is used to package the chip, a first chip 11 is provided in the through hole T, and the first chip 11 and the packaging substrate 12 are connected by a first plastic encapsulation layer 13
- the second plastic encapsulation layer 14 covers the second surface, the back surface of the first chip 11 and the first plastic encapsulation layer 13 in the through hole T, thereby forming a packaging structure, and the device structure is simple.
- the first chip 11 may be electrically connected to an external circuit through the first contact end 121 of the packaging substrate 12, so that the first chip 11 is electrically connected to the external circuit.
- the second plastic encapsulation layer 14 carries the first chip 11 and the first plastic encapsulation layer 13 in the through-hole T.
- 14 can buffer the pressure, thereby avoiding the failure problem caused by the pressure at the boundary between the back edge of the first chip 11 and the second plastic encapsulation layer 13 and improving reliability.
- the first chip 11 is a fingerprint chip
- the user's touch operation will exert pressure on the front of the packaging structure.
- Using the packaging structure described in the technical solution of this application can avoid the failure problem caused by the pressure, thereby ensuring the reliability of fingerprint detection.
- the first surface is provided with a second electrical contact end 123, the first electrical contact end 121 and the second electrical contact end 123 are electrically connected by an interconnection circuit 122 located in the packaging substrate 12, the pad 112 is electrically connected to the second electrical contact 123 so that the pad 112 is electrically connected to the first electrical contact 121 through the second electrical contact 123 and the interconnect circuit 122.
- the bonding pad 112 is electrically connected to the second electrical contact end 123 through a wire 15.
- the wire can be gold wire or other metal wire.
- the front surface of the first chip 11 includes a boss 111 and a groove surrounding the boss 111; the chip functional unit is located on the surface of the boss, and the bonding pad 112 is located on the bottom of the groove. In this way, when the bonding pad 112 and the second electrical contact end 123 are electrically connected through the wire 15, the height of the wire 15 can not exceed the surface of the boss 111, and the height of the wire 15 can be controlled below the surface of the boss 111, so that The first plastic encapsulation layer 13 with a thinner thickness is used to seal the wire 15.
- the second plastic encapsulation layer 14 is a dry film that is adhered and fixed on the second surface.
- the dry film is a plastic encapsulation material and can be directly adhered and fixed on the second surface of the packaging substrate 12.
- the second plastic encapsulation layer 14 may form an opening 141 exposing the first electrical contact 121 through a laser etching process, so as to facilitate electrical connection between the first electrical contact 121 and an external circuit.
- the first plastic encapsulation layer 13 may be disposed to expose the chip functional unit, so as to trigger the chip functional unit to perform a preset function. As shown in FIG. 1, the first plastic encapsulation layer 13 exposes the boss 111 of the first chip 11 to expose The chip functional unit covers the groove on the front surface of the first chip 11.
- the first plastic encapsulation layer 13 may be formed by injection molding in a mold, and the first plastic encapsulation layer 13 after demolding has an opening exposing the chip functional unit. In this way, the first plastic encapsulation layer 13 is formed by injection molding directly. In another way, the first plastic encapsulation layer 13 may be formed by moldless injection, and the opening of the chip functional unit may be exposed through a thinning process.
- FIG. 3 is a schematic diagram of another chip packaging structure provided by an embodiment of the present application
- FIG. 4 is a front plan view of the package dismissal shown in FIG. 3, which is in the manner shown in FIG. 1,
- a second chip 21 located in the through-hole T, the second chip 21 has opposite front and back surfaces, the back surface is close to the second surface, and the front surface is close to the first surface; wherein, the first The two chips 21 are electrically connected to the corresponding first electrical contact terminals 123.
- the first molding layer 13 is not shown in FIG. 4 in order to clearly illustrate the front structure of the packaging structure.
- the thickness of the second chip 21 is smaller than the thickness of the first chip 11.
- the first plastic encapsulation layer 13 may be provided to cover the front surface of the second chip 21; the second plastic encapsulation layer 14 covers the back surface of the second chip 21.
- the front surface of the second chip 21 can be completely sealed by the first molding compound layer 13 and the back surface of the second chip 21 can be completely sealed by the second molding compound layer.
- the back surfaces of the second chip 21 and the first chip 11 may be flush with each other, and the back surface of the package substrate 12 is evenly flush with each other, so that when the two are packaged, it is convenient for the two to be placed in the through hole T And fixed.
- the first chip 11 and the second chip 21 are respectively electrically connected to different second electrical contacts 123 to be electrically connected to external circuits through different first electrical contacts 121. Based on circuit interconnection requirements, the first chip 11 and the second chip 21 may also be electrically connected through corresponding wires 15. If the second chip 21 has a pad 211 on the front side, the partial pad 112 on the front side of the first chip 11 and the partial pad 211 on the front side of the second chip 21 are electrically connected correspondingly.
- the packaging structure described in the embodiment of the present application encapsulates the chip through the first plastic encapsulation layer 13, the second plastic encapsulation layer 14 and the packaging substrate 12.
- the structure is simple and the manufacturing cost is low.
- the pressure on the front of the packaging structure is buffered by the second plastic encapsulation layer on the second surface of the packaging substrate 12, so as to avoid the problem of pressure failure at the boundary between the back edge of the chip in the through hole T and the first plastic encapsulation layer.
- two chips can be packaged in the through hole T at the same time, and the thickness of the package structure is relatively thin.
- FIGS. 5-14 is a schematic flowchart of a packaging method according to an embodiment of the present application.
- the packaging method includes:
- Step S11 As shown in FIGS. 5 and 6, a substrate 10 is provided.
- the base 10 includes a plurality of packaging substrates 12 with a cutting channel 100 between adjacent packaging substrates 12.
- the packaging substrate 12 includes opposite first surfaces and second surfaces that penetrate the first surfaces and all A through hole T on the second surface, the second surface is provided with a first electrical contact end 121, and the first electrical contact end 121 is used for electrical connection with an external circuit;
- Step S12 As shown in FIGS. 7 and 8, the first chip 11 is disposed in the through hole T.
- the first chip 11 has opposite front and back sides, and the front side has a chip functional unit and a pad 112 electrically connected to the functional unit, the pad 112 is electrically connected to the first electrical contact 121;
- the back side is close to the second surface, the front side is close to the first surface, and the front side exposes the through hole T.
- the carrier board 31 is temporarily fixed on the back surface of the base 10, the base 10 to which the carrier board 31 is fixed is placed horizontally, and the first surface of each package substrate 12 is placed upward. Then, as shown in FIG. 8, a first chip 11 is provided on the surface of the carrier board 31 in each through hole T, and the chip 11 is electrically connected to the corresponding package substrate 12.
- the first surface is provided with a second electrical contact end 123, the first electrical contact end 123 and the second electrical contact end 121 are electrically connected through an interconnection circuit 122 located in the packaging substrate 12, the pad 112 is electrically connected to the second electrical contact terminal 123.
- the bonding pad 112 is electrically connected to the second electrical contact end 123 through the wire 15.
- the front surface of the first chip 11 includes a boss 111 and a groove surrounding the boss, the chip functional unit is located on the surface of the boss, and the bonding pad 112 is located on the bottom of the groove to facilitate lowering The height of the wire 15.
- Step S13 As shown in FIGS. 9 and 10, a first plastic encapsulation layer 13 is formed.
- the first plastic encapsulation layer 13 covers the first surface, fills the through hole T, and exposes the chip functional unit.
- the forming of the first plastic encapsulation layer 13 includes: first, as shown in FIG. 9, the first plastic encapsulation layer 14 is formed by moldless injection, and the first plastic encapsulation layer 14 covers the front surface of the first chip 11 and the packaging substrate The first surface of 12, and then, as shown in FIG. 10, an opening exposing the chip functional unit is formed through a thinning process.
- the first plastic encapsulation layer 13 is also formed by injection molding directly through a mold, and the first plastic encapsulation layer 13 after demolding has an opening exposing the chip functional unit.
- Step S14 As shown in FIGS. 11-13, a second plastic encapsulation layer 14 is formed, the second plastic encapsulation layer 14 covering the second surface, the back surface of the first chip 11 and the first in the through hole T A plastic seal layer 13;
- the forming of the second plastic sealing layer 14 includes: bonding and fixing a dry film on the second surface, the dry film being a plastic sealing material.
- the forming of the second plastic encapsulation layer 14 includes: first, as shown in FIG. 11, the carrier plate 31 is removed, and the base is inverted so that the second surface of each packaging substrate 12 faces upward, and then as shown in FIG. 12, in A second plastic encapsulation layer is formed on the back of the substrate. Finally, as shown in FIG. 13, an opening 141 is formed in the second plastic encapsulation layer 14 through the laser etching process to expose the first electrical contact 121.
- Step S15 As shown in FIG. 14, the first plastic encapsulation layer 13, the substrate 10 and the second plastic encapsulation layer 14 are divided based on the cutting channel 100.
- the packaging structures shown in FIGS. 1 and 2 can be manufactured.
- FIG. 15-21 is a schematic flowchart of another packaging method provided by an embodiment of the present application.
- the above method differs in that, before forming the first plastic encapsulation layer 13, it further includes: providing a second chip 21 in the through hole T, having opposite front and back surfaces, the back surface of which is close to the second surface and the front surface Close to the first surface; wherein, the second chip 21 is electrically connected to the corresponding first electrical contact 121.
- the first plastic encapsulation layer 13 covers the front side of the second chip 21; the second plastic encapsulation layer 21 covers the back side of the second chip 21.
- the back surface of the first chip 11 is flush with the second surface; the back surface of the second chip 21 is flush with the second surface.
- the first chip 11 and the second chip 21 are provided in the through hole T at the same time, the thickness of the first chip 11 is greater than the thickness of the second chip 21, the chip functional unit of the first chip 11 is exposed through the through hole T, The second chip 21 does not exceed the through hole T.
- the two chips may be electrically connected to the packaging substrate through wires 15 respectively.
- a first molding compound layer 13 is formed, and the first molding compound layer 13 covers the two chip front surfaces and the first surface of the package substrate 12.
- the chip functional unit of the first chip 11 is exposed.
- the second encapsulation layer 14 is formed on the back of the substrate 10, and the forming process is the same as the above method, which will not be repeated here.
- cutting to form a plurality of packaging structures are provided in the through hole T at the same time, the thickness of the first chip 11 is greater than the thickness of the second chip 21, the chip functional unit of the first chip 11 is exposed through the through hole T, The second chip 21 does not exceed the through hole T.
- the two chips may be electrically connected
- the packaging method described in the embodiments of the present application can be used to fabricate the packaging structure described in the above embodiments, the process is simple, and the manufacturing cost is low.
- a package substrate having a through hole is used to package the chip, a first chip is provided in the through hole, and the first chip and the package substrate are fixed by a first plastic encapsulation layer.
- the second plastic encapsulation layer covers the second surface, the back surface of the first chip, and the first plastic encapsulation layer in the through hole, thereby forming a packaging structure, and the device structure is simple.
- the first chip may be electrically connected to the external circuit through the first contact end of the packaging substrate, so as to facilitate the electrical connection between the first chip and the external circuit.
- the second plastic encapsulation layer carries the first chip and the first plastic encapsulation layer in the through hole, and when the side of the packaging structure close to the front surface of the first chip is under pressure, the second plastic encapsulation layer can buffer the pressure In order to avoid the failure problem caused by the pressure at the boundary between the back edge of the first chip and the second molding layer, and improve the reliability.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
A chip packaging structure and method. A package substrate (12) having a through hole (T) is used for packaging a chip; a first chip (11) is disposed in the through hole (T); the first chip (11) and the package substrate (12) are fixed by means of a first plastic packaging layer (13); a second surface of the packaging substrate (12), the back surface of the first chip (11), and the first plastic packaging layer (13) in the through hole (T) are covered by a second plastic packaging layer (14). Thus, a package structure is formed, and the device has a simple structure. The first chip (11) can be electrically connected to an external circuit by means of a first contact end (121) of the package substrate (12), so that the first chip (11) is electrically connected to the external circuit. Moreover, the first chip (11) and the first plastic packaging layer (13) in the through hole (T) are borne by means of the second plastic packaging layer (14); when the side of the package structure close to the front surface of the first chip (11) is under pressure, the second plastic packaging layer (14) can buffer the pressure, thereby avoiding the problem of failure at the junction of the back periphery of the first chip (11) and the second plastic packaging layer (14) due to the pressure.
Description
本公开要求在2018年11月20日提交中国专利局、申请号为201811382629.1的中国专利申请的优先权,以上申请的全部内容通过引用结合在本公开中。This disclosure requires the priority of the Chinese patent application filed on November 20, 2018 with the Chinese Patent Office and the application number 201811382629.1. The entire contents of the above applications are incorporated by reference in this disclosure.
本申请涉及芯片封装技术领域,例如涉及一种芯片的封装结构以及封装方法。The present application relates to the field of chip packaging technology, for example, to a chip packaging structure and packaging method.
随着科学技术的不断发展,越来越多的电子设备被广泛的应用于人们的日常生活以及工作当中,为人们的日常生活以及工作带来了巨大的便利,成为当今人们不可或缺的重要工具。With the continuous development of science and technology, more and more electronic devices are widely used in people's daily life and work, which brings great convenience to people's daily life and work, and becomes an indispensable important thing for people today. tool.
电子设备实现预设功能的主要部件是芯片,随着集成电路技术的不断进步,芯片的集成度越来越高,芯片的功能越来越强大,而芯片的尺寸越来越小,故芯片需要通过封装,形成封装结构,以便于芯片与外部电路电连接。The main component of the electronic device to realize the preset function is the chip. With the continuous progress of integrated circuit technology, the integration of the chip is getting higher and higher, the function of the chip is getting stronger, and the size of the chip is getting smaller and smaller, so the chip needs Through packaging, a packaging structure is formed, so that the chip is electrically connected to an external circuit.
设计一种结构简单的芯片封装结构,以便于芯片与外部电路电连接,是芯片封装技术领域亟待解决的问题。Designing a chip packaging structure with a simple structure to facilitate electrical connection between the chip and an external circuit is an urgent problem to be solved in the field of chip packaging technology.
发明内容Summary of the invention
本申请公开了一种芯片的封装结构以及封装方法,可以形成结构简单的芯片封装结构,且便于芯片与外部电路电连接。The present application discloses a chip packaging structure and a packaging method, which can form a chip packaging structure with a simple structure and facilitate the electrical connection between the chip and an external circuit.
本申请提供如下方案:This application provides the following solutions:
一种芯片的封装结构,所述封装结构包括:A packaging structure of a chip, the packaging structure includes:
封装基板,所述封装基板包括相反的第一表面以及第二表面,贯穿所述第一表面以及所述第二表面的通孔,所述第二表面设置有第一电接触端,所述第一电接触端用于与外部电路电连接;A package substrate, the package substrate including opposite first surfaces and second surfaces, through holes penetrating the first surface and the second surface, the second surface is provided with a first electrical contact end, the first An electrical contact is used for electrical connection with external circuits;
设置在所述通孔内的第一芯片,所述第一芯片具有相反的正面以及背面,其正面具有芯片功能单元以及与所述芯片功能单元电连接的焊垫,所述焊垫与所述第一电接触端电连接;其背面靠近所述第二表面,其正面靠近所述第一表面,且其正面露出所述通孔;A first chip provided in the through hole, the first chip having opposite front and back sides, the front side of which has a chip functional unit and a pad electrically connected to the chip functional unit, the pad and the The first electrical contact end is electrically connected; its rear side is close to the second surface, its front side is close to the first surface, and its front side exposes the through hole;
第一塑封层,所述第一塑封层覆盖所述第一表面,填充所述通孔,且露出所述芯片功能单元;A first plastic encapsulation layer, the first plastic encapsulation layer covers the first surface, fills the through hole, and exposes the chip functional unit;
第二塑封层,所述第二塑封层覆盖所述第二表面、所述第一芯片的背面以及所述通孔内的第一塑封层。A second plastic encapsulation layer covering the second surface, the back surface of the first chip, and the first plastic encapsulation layer in the through hole.
本申请还提供一种芯片的封装方法,包括:This application also provides a chip packaging method, including:
提供一基底,所述基底包括多个封装基板,相邻所述封装基板之间具有切割沟道,所述封装基板包括相反的第一表面以及第二表面,贯穿所述第一表面以及所述第二表面的通孔,所述第二表面设置有第一电接触端,所述第一电接触端用于与外部电路电连接;A base is provided. The base includes a plurality of packaging substrates with a cutting channel between adjacent packaging substrates. The packaging substrate includes opposite first surfaces and second surfaces that extend through the first surfaces and the A through hole on the second surface, the second surface is provided with a first electrical contact end, the first electrical contact end is used for electrical connection with an external circuit;
在所述通孔内设置第一芯片,所述第一芯片具有相反的正面以及背面,其正面具有芯片功能单元以及与所述功能单元电连接的焊垫,所述焊垫与所述第一电接触端电连接;其背面靠近所述第二表面,其正面靠近所述第一表面,且其正面露出所述通孔;A first chip is provided in the through hole, the first chip has opposite front and back sides, the front side has a chip functional unit and a pad electrically connected to the functional unit, the pad and the first The electrical contact ends are electrically connected; the back surface is close to the second surface, the front surface is close to the first surface, and the front surface exposes the through hole;
形成第一塑封层,所述第一塑封层覆盖所述第一表面,填充所述通孔,且露出所述芯片功能单元;Forming a first plastic encapsulation layer, the first plastic encapsulation layer covering the first surface, filling the through hole, and exposing the chip functional unit;
形成第二塑封层,所述第二塑封层覆盖所述第二表面、所述第一芯片的背面以及所述通孔内的第一塑封层;Forming a second plastic encapsulation layer, the second plastic encapsulation layer covering the second surface, the back surface of the first chip, and the first plastic encapsulation layer in the through hole;
基于所述切割沟道分割所述第一塑封层、所述基底以及所述第二塑封层。The first plastic encapsulation layer, the substrate, and the second plastic encapsulation layer are divided based on the cutting channel.
图1为本申请实施例提供的一种芯片的封装结构的示意图;FIG. 1 is a schematic diagram of a chip packaging structure provided by an embodiment of the present application;
图2为图1所示封装结构的正面俯视图;2 is a front plan view of the packaging structure shown in FIG. 1;
图3为本申请实施例提供的另一种芯片的封装结构的示意图;3 is a schematic diagram of another chip packaging structure provided by an embodiment of the present application;
图4为图3所示封装解雇的正面俯视图;FIG. 4 is a front plan view of the package dismissal shown in FIG. 3;
图5-图14为本申请实施例提供的一种封装方法的流程示意图;5 to 14 are schematic flowcharts of a packaging method provided by an embodiment of the present application;
图15-图21为本申请实施例提供的另一种封装方法的流程示意图。15-21 are schematic flowcharts of another packaging method provided by an embodiment of the present application.
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。参考图1和图2,图1为本申请实施例提供的一种芯片的封装结 构的示意图,图2为图1所示封装结构的正面俯视图。该封装结构包括:封装基板12,所述封装基板12包括相反的第一表面以及第二表面,贯穿所述第一表面以及所述第二表面的通孔T,所述第二表面设置有第一电接触端121,所述第一电接触端121用于与外部电路电连接;设置在所述通孔内的第一芯片11,所述第一芯片11具有相反的正面以及背面,其正面具有芯片功能单元以及与所述芯片功能单元电连接的焊垫112,所述焊垫112与所述第一电接触端121电连接,其背面靠近所述第二表面,其正面靠近所述第一表面,且其正面露出所述通孔T。图1中未示出第一芯片11的芯片功能单元。图2中未示出第一塑封层13,以便于清楚图示封装结构的正面结构。The technical solutions in the embodiments of the present application will be described clearly and completely in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all the embodiments. 1 and 2, FIG. 1 is a schematic diagram of a chip packaging structure provided by an embodiment of the present application, and FIG. 2 is a front plan view of the packaging structure shown in FIG. 1. The packaging structure includes: a packaging substrate 12 including opposite first and second surfaces, a through hole T penetrating through the first surface and the second surface, the second surface being provided with a An electrical contact 121, the first electrical contact 121 is used for electrical connection with an external circuit; a first chip 11 disposed in the through hole, the first chip 11 has opposite front and back sides, the front side It has a chip functional unit and a pad 112 electrically connected to the chip functional unit, the pad 112 is electrically connected to the first electrical contact 121, its back is close to the second surface, and its front is close to the first One surface, and the front surface of the through hole T is exposed. The chip functional unit of the first chip 11 is not shown in FIG. 1. The first plastic encapsulation layer 13 is not shown in FIG. 2 in order to clearly illustrate the front structure of the packaging structure.
所述封装结构还包括第一塑封层13以及第二塑封层14。所述第一塑封层13覆盖所述第一表面,填充所述通孔T,且露出所述芯片功能单元。所述第二塑封层14覆盖所述第二表面、所述第一芯片11的背面以及所述通孔T内的第一塑封层13。The packaging structure further includes a first plastic encapsulation layer 13 and a second plastic encapsulation layer 14. The first molding layer 13 covers the first surface, fills the through hole T, and exposes the chip functional unit. The second plastic encapsulation layer 14 covers the second surface, the back surface of the first chip 11 and the first plastic encapsulation layer 13 in the through hole T.
本申请实施例所述封装结构中,采用具有通孔T的封装基板12对芯片进行封装,在通孔T内设置第一芯片11,通过第一塑封层13将第一芯片11与封装基板12进行固定,通过第二塑封层14覆盖所述第二表面、所述第一芯片11的背面以及所述通孔T内的第一塑封层13,从而形成封装结构,器件结构简单。第一芯片11可以通过封装基板12的第一接触端121与外部电路电连接,便于第一芯片11与外部电路电连接。而且,通过所述第二塑封层14承载通孔T内的第一芯片11以及第一塑封层13,在封装结构靠近第一芯片11正面的一侧受到压力时,通过所述第二塑封层14可以缓冲所述压力,从而避免所述第一芯片11的背面周缘与所述第二塑封层13交界处由于所述压力导致的失效问题,提高可靠性,如第一芯片11为指纹芯片,在指纹检测时,用户触摸操作会在封装结构的正面施加压力,采用本申请技术方案所述封装结构,可以避免该压力导致的失效问题,从而保证指纹检测的可靠性。In the packaging structure described in the embodiment of the present application, a package substrate 12 having a through hole T is used to package the chip, a first chip 11 is provided in the through hole T, and the first chip 11 and the packaging substrate 12 are connected by a first plastic encapsulation layer 13 For fixing, the second plastic encapsulation layer 14 covers the second surface, the back surface of the first chip 11 and the first plastic encapsulation layer 13 in the through hole T, thereby forming a packaging structure, and the device structure is simple. The first chip 11 may be electrically connected to an external circuit through the first contact end 121 of the packaging substrate 12, so that the first chip 11 is electrically connected to the external circuit. Furthermore, the second plastic encapsulation layer 14 carries the first chip 11 and the first plastic encapsulation layer 13 in the through-hole T. When the side of the packaging structure close to the front surface of the first chip 11 is pressed, 14 can buffer the pressure, thereby avoiding the failure problem caused by the pressure at the boundary between the back edge of the first chip 11 and the second plastic encapsulation layer 13 and improving reliability. For example, if the first chip 11 is a fingerprint chip, During fingerprint detection, the user's touch operation will exert pressure on the front of the packaging structure. Using the packaging structure described in the technical solution of this application can avoid the failure problem caused by the pressure, thereby ensuring the reliability of fingerprint detection.
所述第一表面设置有第二电接触端123,所述第一电接触端121与所述第二电接触端123通过位于所述封装基板12内的互联电路122电连接,所述焊垫112与所述第二电接触端123电连接,以使得所述焊垫112通过所述第二电接触端123以及所述互联电路122与所述第一电接触端121电连接。The first surface is provided with a second electrical contact end 123, the first electrical contact end 121 and the second electrical contact end 123 are electrically connected by an interconnection circuit 122 located in the packaging substrate 12, the pad 112 is electrically connected to the second electrical contact 123 so that the pad 112 is electrically connected to the first electrical contact 121 through the second electrical contact 123 and the interconnect circuit 122.
如图1所示,所述焊垫112通过导线15与所述第二电接触端123电连接。 导线可以为金线或是其他金属导线。设置所述第一芯片11的正面包括凸台111以及包围所述凸台111的凹槽;所述芯片功能单元位于所述凸台表面,所述焊垫112位于所述凹槽的底部。这样,当通过导线15电连接焊垫112和第二电接触端123时,可以使得导线15的高度不超过凸台111的表面,将导线15的高度控制在凸台111表面之下,这样可以采用较薄厚度的第一塑封层13将导线15密封。As shown in FIG. 1, the bonding pad 112 is electrically connected to the second electrical contact end 123 through a wire 15. The wire can be gold wire or other metal wire. The front surface of the first chip 11 includes a boss 111 and a groove surrounding the boss 111; the chip functional unit is located on the surface of the boss, and the bonding pad 112 is located on the bottom of the groove. In this way, when the bonding pad 112 and the second electrical contact end 123 are electrically connected through the wire 15, the height of the wire 15 can not exceed the surface of the boss 111, and the height of the wire 15 can be controlled below the surface of the boss 111, so that The first plastic encapsulation layer 13 with a thinner thickness is used to seal the wire 15.
所述第二塑封层14为贴合固定在所述第二表面的干膜,所述干膜为塑封材料,可以直接贴合固定在所述封装基板12的第二表面。所述第二塑封层14可以通过激光刻蚀工艺形成露出所述第一电接触端121的开口141,以便于第一电接触端121和外部电路电连接。The second plastic encapsulation layer 14 is a dry film that is adhered and fixed on the second surface. The dry film is a plastic encapsulation material and can be directly adhered and fixed on the second surface of the packaging substrate 12. The second plastic encapsulation layer 14 may form an opening 141 exposing the first electrical contact 121 through a laser etching process, so as to facilitate electrical connection between the first electrical contact 121 and an external circuit.
可以设置所述第一塑封层13露出所述芯片功能单元,以便于触发芯片功能单元执行预设功能,如图1所示,第一塑封层13露出第一芯片11的凸台111,以露出所述芯片功能单元,且覆盖第一芯片11正面的凹槽。一种方式可以通过模具注塑形成所述第一塑封层13,脱模后的所述第一塑封层13具有露出所述芯片功能单元的开口。该方式直接通过模具注塑形成所述第一塑封层13。另一种方式可以通过无模具注塑形成所述第一塑封层13,通过减薄处理露出所述芯片功能单元的开口。The first plastic encapsulation layer 13 may be disposed to expose the chip functional unit, so as to trigger the chip functional unit to perform a preset function. As shown in FIG. 1, the first plastic encapsulation layer 13 exposes the boss 111 of the first chip 11 to expose The chip functional unit covers the groove on the front surface of the first chip 11. In one way, the first plastic encapsulation layer 13 may be formed by injection molding in a mold, and the first plastic encapsulation layer 13 after demolding has an opening exposing the chip functional unit. In this way, the first plastic encapsulation layer 13 is formed by injection molding directly. In another way, the first plastic encapsulation layer 13 may be formed by moldless injection, and the opening of the chip functional unit may be exposed through a thinning process.
参考图3和图4,图3为本申请实施例提供的另一种芯片的封装结构的示意图,图4为图3所示封装解雇的正面俯视图,该封装结构在图1所示方式上,还包括:位于所述通孔T内的第二芯片21,第二芯片21具有相反的正面和背面,其背面靠近所述第二表面,其正面靠近所述第一表面;其中,所述第二芯片21与对应的所述第一电接触端123电连接。同样,图4中未示出第一塑封层13,以便于清楚图示封装结构的正面结构。Referring to FIGS. 3 and 4, FIG. 3 is a schematic diagram of another chip packaging structure provided by an embodiment of the present application, and FIG. 4 is a front plan view of the package dismissal shown in FIG. 3, which is in the manner shown in FIG. 1, Also includes: a second chip 21 located in the through-hole T, the second chip 21 has opposite front and back surfaces, the back surface is close to the second surface, and the front surface is close to the first surface; wherein, the first The two chips 21 are electrically connected to the corresponding first electrical contact terminals 123. Similarly, the first molding layer 13 is not shown in FIG. 4 in order to clearly illustrate the front structure of the packaging structure.
所述第二芯片21的厚度小于所述第一芯片11的厚度。这样,可以设置所述第一塑封层13覆盖所述第二芯片21的正面;所述第二塑封层14覆盖所述第二芯片21的背面。也就是说,可以通过第一塑封层13完全将第二芯片21的正面进行密封,通过第二塑封层完全将第二芯片21的背面进行密封。可以设置第二芯片21和第一芯片11的背面齐平,且二者背面均匀封装基板12的第二表面齐平,这样对二者进行封装时,以便于二者在通孔T内的放置和固定。The thickness of the second chip 21 is smaller than the thickness of the first chip 11. In this way, the first plastic encapsulation layer 13 may be provided to cover the front surface of the second chip 21; the second plastic encapsulation layer 14 covers the back surface of the second chip 21. In other words, the front surface of the second chip 21 can be completely sealed by the first molding compound layer 13 and the back surface of the second chip 21 can be completely sealed by the second molding compound layer. The back surfaces of the second chip 21 and the first chip 11 may be flush with each other, and the back surface of the package substrate 12 is evenly flush with each other, so that when the two are packaged, it is convenient for the two to be placed in the through hole T And fixed.
第一芯片11和第二芯片21分别电连接不同的第二电接触端123,以通过不同的第一电接触端121与外部电路电连接。可以基于电路互联需求,还可以设置第一芯片11和第二芯片21通过对应导线15电连接。如第二芯片21正面具有焊垫211,第一芯片11正面的部分焊垫112和第二芯片21正面的部分焊垫211对应电连接。The first chip 11 and the second chip 21 are respectively electrically connected to different second electrical contacts 123 to be electrically connected to external circuits through different first electrical contacts 121. Based on circuit interconnection requirements, the first chip 11 and the second chip 21 may also be electrically connected through corresponding wires 15. If the second chip 21 has a pad 211 on the front side, the partial pad 112 on the front side of the first chip 11 and the partial pad 211 on the front side of the second chip 21 are electrically connected correspondingly.
通过上述描述可知,本申请实施例所述封装结构通过第一塑封层13、第二塑封层14以及封装基板12对芯片进行封装,结构简单,制作成本低。而且还以通过位于封装基板12第二表面的第二塑封层缓冲封装结构正面受到的压力,从而避免通孔T内芯片背面周缘与第一塑封层交界位置由于压力失效的问题。而且还可以在通孔T内同时封装两个芯片,封装结构的厚度较薄。It can be known from the above description that the packaging structure described in the embodiment of the present application encapsulates the chip through the first plastic encapsulation layer 13, the second plastic encapsulation layer 14 and the packaging substrate 12. The structure is simple and the manufacturing cost is low. Furthermore, the pressure on the front of the packaging structure is buffered by the second plastic encapsulation layer on the second surface of the packaging substrate 12, so as to avoid the problem of pressure failure at the boundary between the back edge of the chip in the through hole T and the first plastic encapsulation layer. Moreover, two chips can be packaged in the through hole T at the same time, and the thickness of the package structure is relatively thin.
基于上述实施例,本申请另一实施例里还提供了一种芯片的封装方法,该封装方法可以用于制作上述实施例所述封装结构,该封装方法如图5-图14所示,图5-图14为本申请实施例提供的一种封装方法的流程示意图,该封装方法包括:Based on the above embodiment, another embodiment of the present application also provides a chip packaging method. The packaging method can be used to fabricate the packaging structure described in the above embodiment. The packaging method is shown in FIGS. 5-14. 5- FIG. 14 is a schematic flowchart of a packaging method according to an embodiment of the present application. The packaging method includes:
步骤S11:如图5和图6所示,提供一基底10。Step S11: As shown in FIGS. 5 and 6, a substrate 10 is provided.
所述基底10包括多个封装基板12,相邻所述封装基板12之间具有切割沟道100,所述封装基板12包括相反的第一表面以及第二表面,贯穿所述第一表面以及所述第二表面的通孔T,所述第二表面设置有第一电接触端121,所述第一电接触端121用于与外部电路电连接;The base 10 includes a plurality of packaging substrates 12 with a cutting channel 100 between adjacent packaging substrates 12. The packaging substrate 12 includes opposite first surfaces and second surfaces that penetrate the first surfaces and all A through hole T on the second surface, the second surface is provided with a first electrical contact end 121, and the first electrical contact end 121 is used for electrical connection with an external circuit;
步骤S12:如图7和图8所示,在所述通孔T内设置第一芯片11。Step S12: As shown in FIGS. 7 and 8, the first chip 11 is disposed in the through hole T.
所述第一芯片11具有相反的正面以及背面,其正面具有芯片功能单元以及与所述功能单元电连接的焊垫112,所述焊垫112与所述第一电接触端121电连接;其背面靠近所述第二表面,其正面靠近所述第一表面,且其正面露出所述通孔T。The first chip 11 has opposite front and back sides, and the front side has a chip functional unit and a pad 112 electrically connected to the functional unit, the pad 112 is electrically connected to the first electrical contact 121; The back side is close to the second surface, the front side is close to the first surface, and the front side exposes the through hole T.
该步骤中,首先如图7所示,在基底10的背面临时固定承载板31,将固定有承载板31的基底10水平放置,各个封装基板12的第一表面朝上放置。然后,如图8所示,在各个通孔T内的承载板31表面分别设置一第一芯片11,并将芯片11与对应封装基板12电连接。In this step, first, as shown in FIG. 7, the carrier board 31 is temporarily fixed on the back surface of the base 10, the base 10 to which the carrier board 31 is fixed is placed horizontally, and the first surface of each package substrate 12 is placed upward. Then, as shown in FIG. 8, a first chip 11 is provided on the surface of the carrier board 31 in each through hole T, and the chip 11 is electrically connected to the corresponding package substrate 12.
所述第一表面设置有第二电接触端123,所述第一电接触端123与所述第二电接触端121通过位于所述封装基板12内的互联电路122电连接,所述焊垫112 与所述第二电接触端123电连接。所述焊垫112通过导线15与所述第二电接触端123电连接。所述第一芯片11的正面包括凸台111以及包围所述凸台的凹槽,所述芯片功能单元位于所述凸台表面,所述焊垫112位于所述凹槽的底部,以便于降低导线15的高度。The first surface is provided with a second electrical contact end 123, the first electrical contact end 123 and the second electrical contact end 121 are electrically connected through an interconnection circuit 122 located in the packaging substrate 12, the pad 112 is electrically connected to the second electrical contact terminal 123. The bonding pad 112 is electrically connected to the second electrical contact end 123 through the wire 15. The front surface of the first chip 11 includes a boss 111 and a groove surrounding the boss, the chip functional unit is located on the surface of the boss, and the bonding pad 112 is located on the bottom of the groove to facilitate lowering The height of the wire 15.
步骤S13:如图9和图10所示,形成第一塑封层13,所述第一塑封层13覆盖所述第一表面,填充所述通孔T,且露出所述芯片功能单元。Step S13: As shown in FIGS. 9 and 10, a first plastic encapsulation layer 13 is formed. The first plastic encapsulation layer 13 covers the first surface, fills the through hole T, and exposes the chip functional unit.
该步骤中,所述形成第一塑封层13包括:首先,如图9所示,通过无模具注塑形成所述第一塑封层14,第一塑封层14覆盖第一芯片11的正面以及封装基板12的第一表面,然后,如图10所示,通过减薄处理形成露出所述芯片功能单元的开口。其他方式中,还以直接通过模具注塑形成所述第一塑封层13,脱模后的所述第一塑封层13具有露出所述芯片功能单元的开口。In this step, the forming of the first plastic encapsulation layer 13 includes: first, as shown in FIG. 9, the first plastic encapsulation layer 14 is formed by moldless injection, and the first plastic encapsulation layer 14 covers the front surface of the first chip 11 and the packaging substrate The first surface of 12, and then, as shown in FIG. 10, an opening exposing the chip functional unit is formed through a thinning process. In other methods, the first plastic encapsulation layer 13 is also formed by injection molding directly through a mold, and the first plastic encapsulation layer 13 after demolding has an opening exposing the chip functional unit.
步骤S14:如图11-图13所示,形成第二塑封层14,所述第二塑封层14覆盖所述第二表面、所述第一芯片11的背面以及所述通孔T内的第一塑封层13;Step S14: As shown in FIGS. 11-13, a second plastic encapsulation layer 14 is formed, the second plastic encapsulation layer 14 covering the second surface, the back surface of the first chip 11 and the first in the through hole T A plastic seal layer 13;
该步骤中,所述形成第二塑封层14包括:在所述第二表面贴合固定干膜,所述干膜为塑封材料。In this step, the forming of the second plastic sealing layer 14 includes: bonding and fixing a dry film on the second surface, the dry film being a plastic sealing material.
该步骤中,所述形成第二塑封层14包括:首先如图11所示,去除承载板31,将基底倒置,使得各个封装基板12的第二表面朝上,然后如图12所示,在基底的背面形成第二塑封层,最后,如图13所示,通过激光刻蚀工艺在所述第二塑封层14上形成露出所述第一电接触端121的开口141。In this step, the forming of the second plastic encapsulation layer 14 includes: first, as shown in FIG. 11, the carrier plate 31 is removed, and the base is inverted so that the second surface of each packaging substrate 12 faces upward, and then as shown in FIG. 12, in A second plastic encapsulation layer is formed on the back of the substrate. Finally, as shown in FIG. 13, an opening 141 is formed in the second plastic encapsulation layer 14 through the laser etching process to expose the first electrical contact 121.
步骤S15:如图14所示,基于所述切割沟道100分割所述第一塑封层13、所述基底10以及所述第二塑封层14。Step S15: As shown in FIG. 14, the first plastic encapsulation layer 13, the substrate 10 and the second plastic encapsulation layer 14 are divided based on the cutting channel 100.
通过图5-图14所示封装方法,可以制作如图1和图2所示封装结构。Through the packaging methods shown in FIGS. 5-14, the packaging structures shown in FIGS. 1 and 2 can be manufactured.
如制作如图3和图4所示封装结构,封装方法可以如图15-图21所示,图15-图21为本申请实施例提供的另一种封装方法的流程示意图,该封装方法与上述方法不同在于,在形成所述第一塑封层13之前,还包括:在所述通孔T内设置第二芯片21,具有相反的正面和背面,其背面靠近所述第二表面,其正面靠近所述第一表面;其中,所述第二芯片21与对应的所述第一电接触端121电连接。所述第一塑封层13覆盖所述第二芯片21的正面;所述第二塑封层21覆盖所述第二芯片21的背面。所述第一芯片11的背面与所述第二表面齐平;所述 第二芯片21的背面与所述第二表面齐平。If the packaging structure shown in FIGS. 3 and 4 is manufactured, the packaging method may be shown in FIGS. 15-21. FIG. 15-21 is a schematic flowchart of another packaging method provided by an embodiment of the present application. The above method differs in that, before forming the first plastic encapsulation layer 13, it further includes: providing a second chip 21 in the through hole T, having opposite front and back surfaces, the back surface of which is close to the second surface and the front surface Close to the first surface; wherein, the second chip 21 is electrically connected to the corresponding first electrical contact 121. The first plastic encapsulation layer 13 covers the front side of the second chip 21; the second plastic encapsulation layer 21 covers the back side of the second chip 21. The back surface of the first chip 11 is flush with the second surface; the back surface of the second chip 21 is flush with the second surface.
如图15所示,在通孔T内同时设置第一芯片11和第二芯片21,第一芯片11的厚度大于第二芯片21的厚度,第一芯片11的芯片功能单元露出通孔T,第二芯片21不超出通孔T。两个芯片可以分别通过导线15和封装基板电连接。然后,如图16所示,形成第一塑封层13,第一塑封层13覆盖两个芯片正面以及封装基板12的第一表面。再如图17所示,通过减薄处理,露出第一芯片11的芯片功能单元。再如图18-图20所示,在基底10背面形成第二封装层14,形成过程与上述方法相同,在此不再赘述。最后,如图21所示,切割形成多个封装结构。As shown in FIG. 15, the first chip 11 and the second chip 21 are provided in the through hole T at the same time, the thickness of the first chip 11 is greater than the thickness of the second chip 21, the chip functional unit of the first chip 11 is exposed through the through hole T, The second chip 21 does not exceed the through hole T. The two chips may be electrically connected to the packaging substrate through wires 15 respectively. Then, as shown in FIG. 16, a first molding compound layer 13 is formed, and the first molding compound layer 13 covers the two chip front surfaces and the first surface of the package substrate 12. As shown in FIG. 17 again, through the thinning process, the chip functional unit of the first chip 11 is exposed. As shown in FIGS. 18-20, the second encapsulation layer 14 is formed on the back of the substrate 10, and the forming process is the same as the above method, which will not be repeated here. Finally, as shown in FIG. 21, cutting to form a plurality of packaging structures.
本申请实施例所述封装方法可以用于制作上述实施例所述封装结构,工艺简单,制作成本低。The packaging method described in the embodiments of the present application can be used to fabricate the packaging structure described in the above embodiments, the process is simple, and the manufacturing cost is low.
本申请提供的芯片的封装结构以及封装方法中,采用具有通孔的封装基板对芯片进行封装,在通孔内设置第一芯片,通过第一塑封层将第一芯片与封装基板进行固定,通过第二塑封层覆盖所述第二表面、所述第一芯片的背面以及所述通孔内的第一塑封层,从而形成封装结构,器件结构简单。第一芯片可以通过封装基板的第一接触端与外部电路电连接,便于第一芯片与外部电路电连接。而且,通过所述第二塑封层承载通孔内的第一芯片以及第一塑封层,在封装结构靠近第一芯片正面的一侧受到压力时,通过所述第二塑封层可以缓冲所述压力,从而避免所述第一芯片的背面周缘与所述第二塑封层交界处由于所述压力导致的失效问题,提高可靠性。In the chip packaging structure and packaging method provided by the present application, a package substrate having a through hole is used to package the chip, a first chip is provided in the through hole, and the first chip and the package substrate are fixed by a first plastic encapsulation layer. The second plastic encapsulation layer covers the second surface, the back surface of the first chip, and the first plastic encapsulation layer in the through hole, thereby forming a packaging structure, and the device structure is simple. The first chip may be electrically connected to the external circuit through the first contact end of the packaging substrate, so as to facilitate the electrical connection between the first chip and the external circuit. Moreover, the second plastic encapsulation layer carries the first chip and the first plastic encapsulation layer in the through hole, and when the side of the packaging structure close to the front surface of the first chip is under pressure, the second plastic encapsulation layer can buffer the pressure In order to avoid the failure problem caused by the pressure at the boundary between the back edge of the first chip and the second molding layer, and improve the reliability.
本说明书中各个实施例采用递进的方式描述,每个实施例重点说明的都是与其他实施例的不同之处,各个实施例之间相同相似部分互相参见即可。对于实施例公开的封装方法而言,由于其与实施例公开的封装结构相对应,所以描述的比较简单,相关之处参见封装结构相关部分说明即可。The embodiments in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments may refer to each other. For the packaging method disclosed in the embodiment, since it corresponds to the packaging structure disclosed in the embodiment, the description is relatively simple, and the relevant part can be referred to the description of the relevant part of the packaging structure.
还需要说明的是,在本文中,诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或 者是还包括为这种物品或者设备所固有的要素。在没有更多限制的情况下,由语句“包括一个……”限定的要素,并不排除在包括上述要素的物品或者设备中还存在另外的相同要素。It should also be noted that in this article, relational terms such as first and second are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply these entities or operations There is any such actual relationship or order. Moreover, the terms "including", "comprising" or any other variant thereof are intended to cover non-exclusive inclusions, such that an article or device that includes a series of elements includes not only those elements, but also other elements not explicitly listed Or it also includes elements inherent to such articles or equipment. Without more restrictions, the element defined by the sentence "include one ..." does not exclude that there are other identical elements in the article or device that includes the above elements.
Claims (22)
- 一种芯片的封装结构,包括:A chip packaging structure, including:封装基板,所述封装基板包括相反的第一表面以及第二表面,贯穿所述第一表面以及所述第二表面的通孔,所述第二表面设置有第一电接触端,所述第一电接触端用于与外部电路电连接;A package substrate, the package substrate including opposite first surfaces and second surfaces, through holes penetrating the first surface and the second surface, the second surface is provided with a first electrical contact end, the first An electrical contact is used for electrical connection with external circuits;设置在所述通孔内的第一芯片,所述第一芯片具有相反的正面以及背面,其正面具有芯片功能单元以及与所述芯片功能单元电连接的焊垫,所述焊垫与所述第一电接触端电连接;其背面靠近所述第二表面,其正面靠近所述第一表面,且其正面露出所述通孔;A first chip provided in the through hole, the first chip having opposite front and back sides, the front side of which has a chip functional unit and a pad electrically connected to the chip functional unit, the pad and the The first electrical contact end is electrically connected; its rear side is close to the second surface, its front side is close to the first surface, and its front side exposes the through hole;第一塑封层,所述第一塑封层覆盖所述第一表面,填充所述通孔,且露出所述芯片功能单元;A first plastic encapsulation layer, the first plastic encapsulation layer covers the first surface, fills the through hole, and exposes the chip functional unit;第二塑封层,所述第二塑封层覆盖所述第二表面、所述第一芯片的背面以及所述通孔内的第一塑封层。A second plastic encapsulation layer covering the second surface, the back surface of the first chip, and the first plastic encapsulation layer in the through hole.
- 根据权利要求1所述的芯片的封装结构,还包括:位于所述通孔内的第二芯片,具有相反的正面和背面,其背面靠近所述第二表面,其正面靠近所述第一表面;The packaging structure of a chip according to claim 1, further comprising: a second chip located in the through hole, having opposite front and back surfaces, the back surface is close to the second surface, and the front surface is close to the first surface ;其中,所述第二芯片与对应的所述第一电接触端电连接。Wherein, the second chip is electrically connected to the corresponding first electrical contact terminal.
- 根据权利要求2所述的芯片的封装结构,其中,所述第一塑封层覆盖所述第二芯片的正面;所述第二塑封层覆盖所述第二芯片的背面。The chip packaging structure according to claim 2, wherein the first plastic encapsulation layer covers the front surface of the second chip; and the second plastic encapsulation layer covers the back surface of the second chip.
- 根据权利要求3所述的芯片的封装结构,其中,所述第一芯片的背面与所述第二表面齐平;The chip packaging structure according to claim 3, wherein the back surface of the first chip is flush with the second surface;所述第二芯片的背面与所述第二表面齐平。The back surface of the second chip is flush with the second surface.
- 根据权利要求1所述的芯片的封装结构,其中,所述第一表面设置有第二电接触端,所述第一电接触端与所述第二电接触端通过位于所述封装基板内的互联电路电连接,所述焊垫与所述第二电接触端电连接。The packaging structure of a chip according to claim 1, wherein the first surface is provided with a second electrical contact end, the first electrical contact end and the second electrical contact end pass through the The interconnection circuit is electrically connected, and the pad is electrically connected to the second electrical contact end.
- 根据权利要求5所述的芯片的封装结构,其中,所述焊垫通过导线与所述第二电接触端电连接。The chip packaging structure according to claim 5, wherein the bonding pad is electrically connected to the second electrical contact terminal through a wire.
- 根据权利要求1所述的芯片的封装结构,其中,所述第一芯片的正面包括凸台以及包围所述凸台的凹槽;所述芯片功能单元位于所述凸台表面,所述焊垫位于所述凹槽的底部。The chip packaging structure according to claim 1, wherein the front surface of the first chip includes a boss and a groove surrounding the boss; the chip functional unit is located on the surface of the boss, and the bonding pad Located at the bottom of the groove.
- 根据权利要求1所述的芯片的封装结构,其中,所述第二塑封层为贴合固定在所述第二表面的干膜,所述干膜为塑封材料。The packaging structure of a chip according to claim 1, wherein the second plastic encapsulation layer is a dry film attached and fixed on the second surface, and the dry film is a plastic encapsulation material.
- 根据权利要求1所述的芯片的封装结构,其中,所述第二塑封层通过激光刻蚀工艺形成露出所述第一电接触端的开口。The packaging structure of a chip according to claim 1, wherein the second plastic encapsulation layer forms an opening exposing the first electrical contact end through a laser etching process.
- 根据权利要求1所述的芯片的封装结构,其中,通过模具注塑形成所述第一塑封层,脱模后的所述第一塑封层具有露出所述芯片功能单元的开口。The chip packaging structure according to claim 1, wherein the first plastic encapsulation layer is formed by injection molding of a mold, and the first plastic encapsulation layer after demolding has an opening exposing the chip functional unit.
- 根据权利要求1所述的芯片的封装结构,其中,通过无模具注塑形成所述第一塑封层,通过减薄处理露出所述芯片功能单元的开口。The chip packaging structure according to claim 1, wherein the first plastic encapsulation layer is formed by moldless injection, and the opening of the chip functional unit is exposed by a thinning process.
- 一种芯片的封装方法,包括:A chip packaging method includes:提供一基底,所述基底包括多个封装基板,相邻所述封装基板之间具有切割沟道,所述封装基板包括相反的第一表面以及第二表面,贯穿所述第一表面以及所述第二表面的通孔,所述第二表面设置有第一电接触端,所述第一电接触端用于与外部电路电连接;A base is provided. The base includes a plurality of packaging substrates with a cutting channel between adjacent packaging substrates. The packaging substrate includes opposite first surfaces and second surfaces that extend through the first surfaces and the A through hole on the second surface, the second surface is provided with a first electrical contact end, the first electrical contact end is used for electrical connection with an external circuit;在所述通孔内设置第一芯片,所述第一芯片具有相反的正面以及背面,其正面具有芯片功能单元以及与所述功能单元电连接的焊垫,所述焊垫与所述第一电接触端电连接;其背面靠近所述第二表面,其正面靠近所述第一表面,且其正面露出所述通孔;A first chip is provided in the through hole, the first chip has opposite front and back sides, the front side has a chip functional unit and a pad electrically connected to the functional unit, the pad and the first The electrical contact ends are electrically connected; the back surface is close to the second surface, the front surface is close to the first surface, and the front surface exposes the through hole;形成第一塑封层,所述第一塑封层覆盖所述第一表面,填充所述通孔,且露出所述芯片功能单元;Forming a first plastic encapsulation layer, the first plastic encapsulation layer covering the first surface, filling the through hole, and exposing the chip functional unit;形成第二塑封层,所述第二塑封层覆盖所述第二表面、所述第一芯片的背面以及所述通孔内的第一塑封层;Forming a second plastic encapsulation layer, the second plastic encapsulation layer covering the second surface, the back surface of the first chip, and the first plastic encapsulation layer in the through hole;基于所述切割沟道分割所述第一塑封层、所述基底以及所述第二塑封层。The first plastic encapsulation layer, the substrate, and the second plastic encapsulation layer are divided based on the cutting channel.
- 根据权利要求12所述的芯片的封装方法,其中,在形成所述第一塑封层之前,还包括:The method for packaging a chip according to claim 12, wherein, before forming the first plastic encapsulation layer, the method further comprises:在所述通孔内设置第二芯片,具有相反的正面和背面,其背面靠近所述第二表面,其正面靠近所述第一表面;A second chip is provided in the through hole, having opposite front and back surfaces, the back surface is close to the second surface, and the front surface is close to the first surface;其中,所述第二芯片与对应的所述第一电接触端电连接。Wherein, the second chip is electrically connected to the corresponding first electrical contact terminal.
- 根据权利要求13所述的芯片的封装方法,其中,所述第一塑封层覆盖所述第二芯片的正面;所述第二塑封层覆盖所述第二芯片的背面。The method for packaging a chip according to claim 13, wherein the first plastic encapsulation layer covers the front surface of the second chip; and the second plastic encapsulation layer covers the back surface of the second chip.
- 根据权利要求14所述的芯片的封装方法,其中,所述第一芯片的背面与所述第二表面齐平;The chip packaging method according to claim 14, wherein the back surface of the first chip is flush with the second surface;所述第二芯片的背面与所述第二表面齐平。The back surface of the second chip is flush with the second surface.
- 根据权利要求12所述的芯片的封装方法,其中,所述第一表面设置有第二电接触端,所述第一电接触端与所述第二电接触端通过位于所述封装基板内的互联电路电连接,所述焊垫与所述第二电接触端电连接。The method for packaging a chip according to claim 12, wherein the first surface is provided with a second electrical contact terminal, and the first electrical contact terminal and the second electrical contact terminal pass through a The interconnection circuit is electrically connected, and the pad is electrically connected to the second electrical contact end.
- 根据权利要求16所述的芯片的封装方法,其中,所述焊垫通过导线与所述第二电接触端电连接。The chip packaging method according to claim 16, wherein the bonding pad is electrically connected to the second electrical contact terminal through a wire.
- 根据权利要求12所述的芯片的封装方法,其中,所述第一芯片的正面包括凸台以及包围所述凸台的凹槽;所述芯片功能单元位于所述凸台表面,所述焊垫位于所述凹槽的底部。The method for packaging a chip according to claim 12, wherein the front surface of the first chip includes a boss and a groove surrounding the boss; the chip functional unit is located on the surface of the boss, and the bonding pad Located at the bottom of the groove.
- 根据权利要求12所述的芯片的封装方法,其中,所述形成第二塑封层包括:The method for packaging a chip according to claim 12, wherein the forming of the second plastic encapsulation layer comprises:在所述第二表面贴合固定干膜,所述干膜为塑封材料。A dry film is attached and fixed on the second surface, and the dry film is a plastic sealing material.
- 根据权利要求12所述的芯片的封装方法,其中,所述形成第二塑封层包括:The method for packaging a chip according to claim 12, wherein the forming of the second plastic encapsulation layer comprises:通过激光刻蚀工艺在所述第二塑封层上形成露出所述第一电接触端的开口。An opening exposing the first electrical contact is formed on the second plastic encapsulation layer through a laser etching process.
- 根据权利要求12所述的芯片的封装方法,其中,所述形成第一塑封层包括:The method of packaging a chip according to claim 12, wherein the forming of the first plastic encapsulation layer comprises:通过模具注塑形成所述第一塑封层,脱模后的所述第一塑封层具有露出所述芯片功能单元的开口。The first plastic encapsulation layer is formed by injection molding with a mold, and the first plastic encapsulation layer after demolding has an opening exposing the chip functional unit.
- 根据权利要求12所述的芯片的封装方法,其中,通过无模具注塑形成所述第一塑封层,通过减薄处理形成露出所述芯片功能单元的开口。The method of packaging a chip according to claim 12, wherein the first plastic encapsulation layer is formed by moldless injection molding, and an opening exposing the chip functional unit is formed by a thinning process.
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CN111276450A (en) * | 2020-02-22 | 2020-06-12 | 多感科技(上海)有限公司 | Chip module and forming method thereof |
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