WO2020100804A1 - Appareil de traitement de liquide de substrat et procédé de traitement de liquide de substrat - Google Patents

Appareil de traitement de liquide de substrat et procédé de traitement de liquide de substrat Download PDF

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Publication number
WO2020100804A1
WO2020100804A1 PCT/JP2019/044111 JP2019044111W WO2020100804A1 WO 2020100804 A1 WO2020100804 A1 WO 2020100804A1 JP 2019044111 W JP2019044111 W JP 2019044111W WO 2020100804 A1 WO2020100804 A1 WO 2020100804A1
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WIPO (PCT)
Prior art keywords
substrate
liquid
processing
plating
unit
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Application number
PCT/JP2019/044111
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English (en)
Japanese (ja)
Inventor
一騎 元松
金子　聡
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東京エレクトロン株式会社
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Publication of WO2020100804A1 publication Critical patent/WO2020100804A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present disclosure relates to a substrate liquid processing apparatus and a substrate liquid processing method.
  • a processing liquid such as a cleaning liquid or a plating liquid may be heated and used.
  • the substrate liquid processing apparatus disclosed in Patent Document 1
  • the substrate is held by the vacuum type chuck section, and the plating liquid on the substrate is heated by the heater to perform the plating process.
  • the present disclosure provides a technique advantageous for improving the uniformity of liquid processing of a substrate.
  • a substrate liquid processing apparatus is a substrate liquid processing apparatus that performs liquid processing on a processing surface of a substrate with a processing liquid, and is adsorbed to a supporting surface of a substrate located on the opposite side of the processing surface to adsorb the substrate.
  • a processing liquid supply unit for supplying a processing liquid to the processing surface of the substrate held by the substrate holding unit, and a processing liquid on the processing surface.
  • a heating unit for heating the substrate, and the substrate holding unit holds the substrate without contacting a central region formed by a partial region of the supporting surface through which the rotation axis passes.
  • FIG. 1 is a schematic plan view showing a configuration example of a plating processing apparatus.
  • FIG. 2 is a cross-sectional view showing a configuration example of the plating processing unit shown in FIG.
  • FIG. 3 is a perspective view showing an example of the substrate holding unit.
  • FIG. 4 is a plan view showing the lower surface of an example of the substrate.
  • FIG. 5 is a perspective view showing a first modified example of the substrate holding portion.
  • FIG. 6 is a sectional view showing a second modification of the substrate holding part.
  • FIG. 7 is a flowchart showing an example of the plating process.
  • a substrate liquid processing apparatus and a substrate liquid processing method will be exemplified below with reference to the drawings.
  • the plating film when a plating film is formed while heating the plating solution on the substrate in the plating process, the plating film does not necessarily have a uniform thickness over the entire upper surface of the substrate.
  • the plating film formed in the central portion of the substrate tends to be thinner than the plating film formed around the central portion.
  • the present inventor found out that the temperature of the central portion of the substrate is lower than the temperature of the peripheral portion during the plating process, which is one of the factors that make the thickness of the plated film non-uniform. It was In particular, a part of thermal energy (hereinafter, also simply referred to as “heat”) in the central portion of the substrate is transmitted to the substrate holding portion to remove the heat in the central portion of the substrate. It was found that the temperature of the plating solution was relatively low. In the substrate liquid processing apparatus shown below, by suppressing the transfer of heat from the central portion of the substrate to the substrate holding portion, the temperature uniformity of the substrate is improved, and by extension, the thickness of the plating film formed on the substrate is reduced. Improves uniformity.
  • the following is an example of a plating processing device that performs plating on the processing surface of a substrate with a plating solution.
  • the technology described below can also be applied to a substrate liquid processing apparatus, a substrate liquid processing method, and other related technologies in which a liquid processing other than plating is performed on a processing surface of a substrate by a processing liquid other than a plating liquid. This is advantageous for improving the uniformity of liquid processing of the substrate.
  • FIG. 1 is a schematic diagram showing a configuration of a plating processing apparatus as an example of a substrate liquid processing apparatus.
  • the plating processing apparatus is an apparatus that supplies the plating liquid L1 (processing liquid) to the substrate W to perform the plating processing (liquid processing) on the substrate W.
  • the plating processing apparatus 1 includes a plating processing unit 2 and a control unit 3 that controls the operation of the plating processing unit 2.
  • the plating processing unit 2 performs various kinds of processing on the substrate W (wafer). Various processes performed by the plating unit 2 will be described later.
  • the control unit 3 is, for example, a computer and has an operation control unit and a storage unit.
  • the operation control unit is composed of, for example, a CPU (Central Processing Unit), and controls the operation of the plating processing unit 2 by reading and executing a program stored in the storage unit.
  • the storage unit includes a storage device such as a RAM (Random Access Memory), a ROM (Read Only Memory), and a hard disk, and stores programs that control various processes executed in the plating processing unit 2.
  • the program may be recorded in a computer-readable recording medium 31 or may be installed from the recording medium 31 to a storage unit. Examples of the computer-readable recording medium 31 include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.
  • the recording medium 31 stores, for example, a program which, when executed by a computer for controlling the operation of the plating processing apparatus 1, causes the computer to control the plating processing apparatus 1 to execute a plating processing method described later.
  • FIG. 1 is a schematic plan view showing the configuration of the plating processing unit 2.
  • the plating processing unit 2 has a loading / unloading station 21 and a processing station 22 provided adjacent to the loading / unloading station 21.
  • the loading / unloading station 21 includes a placing section 211 and a transporting section 212 provided adjacent to the placing section 211.
  • a plurality of transport containers (hereinafter, referred to as “carrier C”) that accommodates a plurality of substrates W in a horizontal state are placed on the placement unit 211.
  • the transport unit 212 includes a transport mechanism 213 and a delivery unit 214.
  • the transfer mechanism 213 includes a holding mechanism that holds the substrate W, and is configured to be movable in the horizontal direction and the vertical direction and capable of turning around the vertical axis.
  • the processing station 22 includes a plating processing unit 5.
  • the number of the plating processing units 5 included in the processing station 22 is two or more, but may be one.
  • the plating units 5 are arranged on both sides of the transport path 221 extending in the predetermined direction (both sides in the direction orthogonal to the moving direction of the transport mechanism 222 described later).
  • a transport mechanism 222 is provided on the transport path 221.
  • the transport mechanism 222 includes a holding mechanism that holds the substrate W, and is configured to be movable in the horizontal direction and the vertical direction and capable of turning around the vertical axis.
  • the transfer mechanism 213 of the loading / unloading station 21 transfers the substrate W between the carrier C and the delivery section 214. Specifically, the transport mechanism 213 takes out the substrate W from the carrier C placed on the placing section 211, and places the taken-out substrate W on the delivery section 214. Further, the transport mechanism 213 takes out the substrate W placed on the delivery unit 214 by the transport mechanism 222 of the processing station 22 and stores it in the carrier C of the placing unit 211.
  • the transfer mechanism 222 of the processing station 22 transfers the substrate W between the transfer section 214 and the plating processing section 5, and between the plating processing section 5 and the transfer section 214. Specifically, the transport mechanism 222 takes out the substrate W placed on the delivery unit 214 and carries the taken-out substrate W into the plating processing unit 5. Further, the transport mechanism 222 takes out the substrate W from the plating processing section 5 and places the taken-out substrate W on the delivery section 214.
  • FIG. 2 is a schematic cross-sectional view showing the configuration of the plating processing section 5.
  • the plating processing section 5 performs liquid processing including electroless plating processing.
  • the plating processing unit 5 includes a chamber 51, a substrate holding unit 52 arranged in the chamber 51 for horizontally holding the substrate W, and a plating solution on the upper surface (processing surface Sw) of the substrate W held by the substrate holding unit 52.
  • a plating solution supply unit 53 (processing solution supply unit) that supplies L1 (processing solution).
  • the substrate holding part 52 has a chuck member 521 for vacuum-sucking the lower surface (back surface) of the substrate W.
  • the substrate holding portion 52 is a so-called vacuum chuck type.
  • a rotation motor 523 (rotation drive unit) is connected to the substrate holding unit 52 via a rotation shaft 522. When the rotation motor 523 is driven, the substrate holding part 52 rotates together with the substrate W.
  • the rotary motor 523 is supported by a base 524 fixed to the chamber 51.
  • the plating solution supply unit 53 is a plating solution nozzle 531 (treatment solution nozzle) that discharges (supplies) the plating solution L1 to the substrate W held by the substrate holding unit 52, and plating that supplies the plating solution L1 to the plating solution nozzle 531. And a liquid supply source 532.
  • the plating solution supply source 532 supplies the plating solution L1 heated or adjusted to a predetermined temperature to the plating solution nozzle 531.
  • the temperature of the plating solution L1 when discharged from the plating solution nozzle 531 is, for example, 55 ° C. or higher and 75 ° C. or lower, and more preferably 60 ° C. or higher and 70 ° C. or lower.
  • the plating solution nozzle 531 is held by the nozzle arm 56 and is movable.
  • the plating solution L1 is a plating solution for autocatalytic (reduction) electroless plating.
  • the plating solution L1 includes, for example, metal ions such as cobalt (Co) ions, nickel (Ni) ions, tungsten (W) ions, copper (Cu) ions, palladium (Pd) ions, and gold (Au) ions; It contains a reducing agent such as phosphoric acid or dimethylamine borane.
  • the plating solution L1 may contain additives and the like.
  • Examples of the plating film (metal film) formed by the plating treatment using the plating solution L1 include CoWB, CoB, CoWP, CoWBP, NiWB, NiB, NiWP, NiWBP and the like.
  • the plating processing unit 5 includes, as another processing liquid supply unit, a cleaning liquid supply unit 54 that supplies the cleaning liquid L2 to the upper surface of the substrate W held by the substrate holding unit 52, and a rinse to the upper surface of the substrate W.
  • the rinse liquid supply part 55 which supplies the liquid L3 is further provided.
  • the cleaning liquid supply unit 54 has a cleaning liquid nozzle 541 for ejecting the cleaning liquid L2 onto the substrate W held by the substrate holding unit 52, and a cleaning liquid supply source 542 for supplying the cleaning liquid L2 to the cleaning liquid nozzle 541.
  • the cleaning liquid L2 include organic acids such as formic acid, malic acid, succinic acid, citric acid, and malonic acid, and hydrofluoric acid (DHF) (fluorine) diluted to a concentration that does not corrode the plated surface of the substrate W.
  • DHF hydrofluoric acid
  • An aqueous solution of hydrogen fluoride) or the like can be used.
  • the cleaning liquid nozzle 541 is held by the nozzle arm 56 and is movable together with the plating liquid nozzle 531.
  • the rinse liquid supply unit 55 includes a rinse liquid nozzle 551 that discharges the rinse liquid L3 onto the substrate W held by the substrate holding unit 52, and a rinse liquid supply source 552 that supplies the rinse liquid L3 to the rinse liquid nozzle 551. ..
  • the rinse liquid nozzle 551 is held by the nozzle arm 56 and is movable together with the plating liquid nozzle 531 and the cleaning liquid nozzle 541.
  • the rinse liquid L3 for example, pure water or the like can be used.
  • a nozzle moving mechanism (not shown) is connected to the nozzle arm 56 that holds the plating solution nozzle 531, the cleaning solution nozzle 541, and the rinse solution nozzle 551 described above.
  • This nozzle moving mechanism moves the nozzle arm 56 horizontally and vertically. More specifically, the nozzle movement mechanism causes the nozzle arm 56 to move between the ejection position at which the processing liquid (the plating liquid L1, the cleaning liquid L2, or the rinse liquid L3) is ejected onto the substrate W and the retreat position retracted from the ejection position. It is possible to move with.
  • the ejection position is not particularly limited as long as the processing liquid can be supplied to any position on the upper surface of the substrate W.
  • the ejection position of the nozzle arm 56 may be different when supplying the plating liquid L1 to the substrate W, when supplying the cleaning liquid L2, and when supplying the rinse liquid L3.
  • the retracted position is a position in the chamber 51 that does not overlap the substrate W when viewed from above and is apart from the ejection position.
  • a cup 571 is provided around the substrate holder 52.
  • the cup 571 is formed in a ring shape when viewed from above, receives the processing liquid scattered from the substrate W when the substrate W is rotated, and guides it to a drain duct 581 described later.
  • An atmosphere blocking cover 572 is provided on the outer peripheral side of the cup 571 to prevent the atmosphere around the substrate W from diffusing into the chamber 51.
  • the atmosphere blocking cover 572 is formed in a cylindrical shape so as to extend in the vertical direction and has an upper end opened. A lid 6 described later can be inserted into the atmosphere blocking cover 572 from above.
  • a drain duct 581 is provided below the cup 571.
  • the drain duct 581 is formed in a ring shape when viewed from above, and receives and discharges the processing liquid received and lowered by the cup 571 or the processing liquid directly lowered from the periphery of the substrate W.
  • An inner cover 582 is provided on the inner peripheral side of the drain duct 581.
  • the substrate W held by the substrate holding part 52 is covered by the lid 6.
  • the lid 6 has a ceiling portion 61 and a side wall portion 62 extending downward from the ceiling portion 61.
  • the ceiling portion 61 is arranged above the substrate W held by the substrate holding portion 52 and faces the substrate W at a relatively small interval when the lid body 6 is positioned at a lower position described later.
  • the ceiling portion 61 includes a first ceiling plate 611 and a second ceiling plate 612 provided on the first ceiling plate 611.
  • a heater 63 (heating unit) is interposed between the first ceiling plate 611 and the second ceiling plate 612, and the first ceiling plate 611 is provided as a first planar body and a second planar body provided so as to sandwich the heater 63.
  • a second ceiling plate 612 is provided. The first ceiling plate 611 and the second ceiling plate 612 seal the heater 63 so that the heater 63 does not come into contact with the processing liquid such as the plating liquid L1.
  • a seal ring 613 is provided between the first ceiling plate 611 and the second ceiling plate 612 and on the outer peripheral side of the heater 63, and the heater 63 is sealed by the seal ring 613.
  • the first ceiling plate 611 and the second ceiling plate 612 preferably have corrosion resistance to a processing liquid such as the plating liquid L1 and may be formed of, for example, an aluminum alloy.
  • the first ceiling plate 611, the second ceiling plate 612, and the side wall portion 62 may be coated with Teflon (registered trademark).
  • a lid moving mechanism 7 is connected to the lid 6 via a lid arm 71.
  • the lid moving mechanism 7 moves the lid 6 horizontally and vertically. More specifically, the lid moving mechanism 7 includes a turning motor 72 that moves the lid 6 in the horizontal direction, and a cylinder 73 (space adjustment unit) that moves the lid 6 in the vertical direction.
  • the turning motor 72 is mounted on a support plate 74 provided so as to be movable in the vertical direction with respect to the cylinder 73.
  • an actuator (not shown) including a motor and a ball screw may be used.
  • the swing motor 72 of the lid moving mechanism 7 moves the lid 6 between an upper position arranged above the substrate W held by the substrate holding part 52 and a retracted position retracted from the upper position.
  • the upper position is a position facing the substrate W held by the substrate holding portion 52 at a relatively large interval, and is a position overlapping the substrate W when viewed from above.
  • the retracted position is a position in the chamber 51 that does not overlap the substrate W when viewed from above.
  • the cylinder 73 of the lid moving mechanism 7 moves the lid 6 in the vertical direction to adjust the distance between the substrate W on which the plating solution L1 is deposited on the processing surface Sw and the first ceiling plate 611 of the ceiling portion 61. To do. More specifically, the cylinder 73 positions the lid 6 at the lower position (the position shown by the solid line in FIG. 2) and the upper position (the position shown by the chain double-dashed line in FIG. 2).
  • the lid body 6 When the lid body 6 is arranged in the lower position, the first ceiling plate 611 comes close to the substrate W. In this case, in order to prevent the contamination of the plating solution L1 and the generation of bubbles in the plating solution L1, it is preferable to set the lower position so that the first ceiling plate 611 does not come into contact with the plating solution L1 on the substrate W. is there.
  • the upper position is a height position where it is possible to avoid the lid 6 from interfering with surrounding structures such as the cup 571 and the atmosphere blocking cover 572 when the lid 6 is swung in the horizontal direction. ..
  • the heater 63 is driven to heat the plating solution L1 on the substrate W when the lid 6 is positioned at the above-described lower position.
  • the side wall portion 62 of the lid body 6 extends downward from the peripheral edge portion of the first ceiling plate 611 of the ceiling portion 61, and when the plating solution L1 on the substrate W is heated (that is, the lid body 6 is positioned at the lower position). In this case), it is arranged on the outer peripheral side of the substrate W.
  • the lower end of the side wall portion 62 may be positioned at a position lower than the substrate W.
  • a heater 63 is provided on the ceiling 61 of the lid 6.
  • the heater 63 heats the processing liquid (preferably the plating liquid L1) on the substrate W when the lid body 6 is positioned at the lower position.
  • the heater 63 is interposed between the first ceiling plate 611 and the second ceiling plate 612 of the lid body 6 and is sealed as described above, and the heater 63 treats the plating solution L1 and the like. Contact with liquid is prevented.
  • an inert gas for example, nitrogen (N 2 ) gas
  • inert gas supply unit 66 includes a gas nozzle 661 that discharges an inert gas inside the lid 6, and an inert gas supply source 662 that supplies the inert gas to the gas nozzle 661.
  • the gas nozzle 661 is provided on the ceiling portion 61 of the lid body 6, and discharges an inert gas toward the substrate W with the lid body 6 covering the substrate W.
  • the ceiling portion 61 and the side wall portion 62 of the lid body 6 are covered with a lid body cover 64.
  • the lid cover 64 is placed on the second ceiling plate 612 of the lid 6 via the support portion 65. That is, a plurality of support portions 65 protruding upward from the upper surface of the second ceiling plate 612 are provided on the second ceiling plate 612, and the lid cover 64 is placed on the support portions 65.
  • the lid cover 64 is movable in the horizontal direction and the vertical direction together with the lid 6.
  • the lid cover 64 preferably has a higher heat insulating property than the ceiling portion 61 and the side wall portion 62 in order to suppress the heat inside the lid 6 from escaping to the surroundings.
  • the lid cover 64 is preferably made of a resin material, and more preferably the resin material has heat resistance.
  • a fan filter unit 59 (gas supply unit) that supplies clean air (gas) around the lid 6 is provided above the chamber 51.
  • the fan filter unit 59 supplies air into the chamber 51 (in particular, inside the atmosphere blocking cover 572), and the supplied air flows toward an exhaust pipe 81 described later.
  • a downflow in which the air flows downward is formed around the lid body 6, and the gas vaporized from the processing liquid such as the plating liquid L1 flows toward the exhaust pipe 81 by the downflow. In this way, the gas vaporized from the processing liquid is prevented from rising and diffusing into the chamber 51.
  • the gas supplied from the fan filter unit 59 described above is exhausted by the exhaust mechanism 8.
  • the exhaust mechanism 8 has two exhaust pipes 81 provided below the cup 571 and an exhaust duct 82 provided below the drain duct 581. Two of the exhaust pipes 81 penetrate the bottom of the drain duct 581 and communicate with the exhaust duct 82.
  • the exhaust duct 82 is formed in a substantially semicircular ring shape when viewed from above. In the present embodiment, one exhaust duct 82 is provided below the drain duct 581, and two exhaust pipes 81 communicate with this exhaust duct 82.
  • the plating solution L1 on the processing surface Sw of the substrate W is heated by the heating unit 35 including the heater 63 and the ceiling section 61 supporting the heater 63. It In practice, the heating unit 35 heats not only the plating solution L1 but also the substrate holding part 52 from the outside.
  • FIG. 3 is a perspective view showing an example of the substrate holding unit 52.
  • FIG. 4 is a plan view showing the lower surface (that is, the support surface Sr) of the substrate W.
  • the substrate holding unit 52 holds the substrate W by adsorbing the supporting surface Sr (lower surface) located on the opposite side of the processing surface Sw (upper surface) of the substrate W, and holds the substrate W in the axial direction D1 (direction parallel to the vertical direction). It is provided so as to be rotatable about a rotation axis Ax extending in the direction.
  • the substrate holding part 52 is connected to a rotary motor 523 (see FIG. 2) via a rotary shaft 522.
  • the rotation shaft 522 connected to the substrate holding part 52 is driven by the rotation motor 523 to rotate the substrate holding part 52 around the rotation axis Ax.
  • the diameter of the substrate holding portion 52 (particularly the maximum diameter of the chuck member 521) is smaller than the diameter of the substrate W (see FIG. 2). As a result, it is possible to prevent the plating solution L1 that has flown from the processing surface Sw of the substrate W to the support surface Sr from adhering to the substrate holding portion 52.
  • the substrate holding part 52 has a central space 37 through which the rotation axis Ax passes, and a chuck member 521 composed of an outer peripheral part that at least partially surrounds the central space 37.
  • the substrate holding part 52 shown in FIG. 3 further includes a beam part 39 that partially covers the central space 37 and is connected to the chuck member 521, and a center support part 40 that supports the beam part 39 from below.
  • the central space 37 is composed of spaces.
  • the central space 37 may be a through hole that penetrates the substrate holding part 52 at least partially in the axial direction D1, or may be a recess having a bottom part.
  • the central space 37 shown in FIG. 3 has a circular planar shape, is partially covered by the beam portion 39, and partially penetrates the substrate holding portion 52.
  • the central space 37 is positioned adjacent to the central region 90 (see FIG. 4) of the supporting surface Sr of the substrate W while the substrate W is held by the substrate holding portion 52.
  • the central area 90 of the support surface Sr is an area corresponding to the central space 37 of the substrate holding part 52, which is formed by a partial area of the support surface Sr through which the rotation axis Ax passes. Therefore, the substrate holding part 52 holds the substrate W without contacting the central region 90. Therefore, heat is not directly conducted from the central region 90 of the substrate W to the substrate holding portion 52. In this way, by holding the substrate W by the substrate holding portion 52 without contacting the substrate holding portion 52 with the central region 90 of the substrate W, the temperature of the central portion of the substrate W (including the central region 90) is locally changed. You can prevent the decline.
  • the diameter of the central space 37 is larger than the diameter of the rotary shaft 522 in the radial direction D2. That is, the substrate holding part 52 does not come into contact with the substrate W over a range including at least the entire range where the rotation shaft 522 is attached to the substrate holding part 52.
  • the range in which the substrate holding part 52 is attached to the rotary shaft 522 is a range based on a plan view, and for example, the projection of the substrate holding part 52 and the projection of the rotation axis with respect to the axial direction D1 are mutually relative. It is the overlapping range.
  • the rotation shaft 522 supports the substrate holder 52 and transmits the rotational power of the rotation motor 523 to the substrate holder 52. Therefore, the temperature of the rotary shaft 522 easily changes due to the heat generation state of the rotary motor 523, and the temperature of the substrate holding portion 52 is easily affected. Since the substrate holding unit 52 does not contact the substrate W in the range where the rotating shaft 522 is attached, it is possible to effectively prevent the temperature of the rotating shaft 522 from affecting the substrate W via the substrate holding unit 52. Can be suppressed.
  • the chuck member 521 supports the substrate W while contacting and adsorbing the supporting surface Sr of the substrate W. From the viewpoint of stably supporting the substrate W, the chuck member 521 preferably has a symmetrical shape about the rotation axis Ax.
  • the chuck member 521 shown in FIG. 3 has an annular planar shape centered on the rotation axis Ax, and surrounds the entire central space 37 in the radial direction D2.
  • the upper surface of the chuck member 521 functions as a suction surface facing the support surface Sr of the substrate W.
  • the illustrated chuck member 521 has a flat surface portion 42 extending in the radial direction D2, and a plurality of annular partition portions 43 protruding upward from the flat surface portion 42.
  • the flat surface portion 42 constitutes the upper surface of the chuck member 521, and is divided into a plurality of regions (hereinafter, also referred to as “divided regions”) 44 according to the distance from the rotation axis Ax in the radial direction D2 by the plurality of partition portions 43. It is divided.
  • Each partition section 43 is intended to come into contact with and adhere to the substrate W placed on the chuck member 521.
  • the height (distance in the axial direction D1) of each partition portion 43 from the flat surface portion 42 is very low, usually smaller than 1 mm (millimeter), and 0.5 mm or less from the viewpoint of appropriately adsorbing and holding the substrate W.
  • the plurality of partition portions 43 are also referred to as a partition portion located on the outermost peripheral side (hereinafter also referred to as “outermost peripheral partition portion”) 43a and a partition portion located on the innermost peripheral side (hereinafter referred to as “innermost peripheral partition portion”). 43b).
  • a space surrounded by the flat surface portion 42 of the substrate holding portion 52, the outermost peripheral side partition portion 43a and the innermost peripheral side partition portion 43b, and the substrate W (hereinafter referred to as “closed space”). (Also referred to as)) is formed.
  • Each partition 43 located between the outermost peripheral partition 43a and the innermost peripheral partition 43b has a cutout 45. Gas can flow through the cutouts 45 between the divided regions 44 adjacent to each other via the divisions 43.
  • the flat surface portion 42 has a suction hole 41 for creating a negative pressure (particularly a pressure lower than the pressure of the surrounding environment) between the chuck member 521 and the substrate W. The gas in the closed space is sucked out through the suction holes 41, whereby the closed space is placed in a vacuum state.
  • the adjacent segmented regions 44 are connected to each other via the notch 45. Therefore, the suction holes 41 may be provided in at least one of the divided areas 44. Only one suction hole 41 may be provided, or a plurality of suction holes 41 may be provided as shown in FIG. 3, and two or more suction holes 41 may be provided in different divided areas 44. May be.
  • the beam portion 39 is fixedly provided on the chuck member 521, and rotates together with the chuck member 521 about the rotation axis Ax.
  • the beam portion 39 functions as a member that covers the central space 37, and faces the central region 90 of the substrate W placed on the chuck member 521. From the viewpoint of reducing heat transfer between the substrate W and the beam portion 39, it is preferable that the distance between the substrate W and the beam portion 39 is large.
  • the distance between the flat portion 42 of the chuck member 521 and the beam portion 39 is usually set to 1 mm or more in the axial direction D1, and the beam portion 39 affects the temperature of the central portion of the substrate W. It is preferably 2 mm or more from the viewpoint of reducing the possible influence.
  • the beam portion 39 preferably has a symmetrical shape with respect to the rotation axis Ax.
  • the illustrated beam portion 39 has four longitudinal members 46 that are arranged 90 degrees apart from each other about the rotation axis Ax. Each longitudinal member 46 extends in the radial direction (that is, the radial direction D2) with the rotation axis Ax as a reference, and its end is fixed to the chuck member 521.
  • the beam portion 39 (in the illustrated beam portion 39, for example, longitudinal members indicated by reference numerals “46a” and “46b”) has an intake line 47 connected to the suction hole 41.
  • Each intake line 47 is connected to an intake means (not shown) such as a vacuum pump. The gas sucked through each suction hole 41 is discharged to the outside of the device through the corresponding suction line 47.
  • the center support part 40 has a rotary shaft 522 fitted therein, and plays a role of fixing the relative position between the substrate holding part 52 and the rotary shaft 522.
  • the center support 40 may or may not be rotatable about the rotation axis Ax. When the center support portion 40 does not rotate, the center support portion 40 rotatably supports the beam portion 39, and the rotation shaft 522 is directly connected to the beam portion 39. When the center support portion 40 is rotatable, the center support portion 40 may be fixed to the beam portion 39 and the rotation shaft 522 may be connected to the center support portion 40, or the rotation shaft 522 may be attached to the beam portion 39. It may be directly connected.
  • the chuck member 521 of the substrate holding unit 52 has an annular shape (that is, a donut shape) with a hollowed central portion. Then, the substrate W is held without coming into contact with the central portion of the substrate W. Therefore, during the plating process, the plating solution L1 on the substrate W is heated in a state where the heat conduction from the central portion of the substrate W to the substrate holding portion 52 is blocked, and the relative temperature decrease of the central portion of the substrate W occurs. Can be suppressed.
  • the uniformity of the thickness of the plating film formed on the substrate W is improved. Can be improved.
  • the distance between the portion of the substrate holding portion 52 that does not contact the substrate W and the substrate W is large.
  • the area of the substrate holding portion 52 facing the substrate W is preferably small, and the portion of the central space 37 penetrating the substrate holding portion 52 in the axial direction D1 is preferably large.
  • the range of the substrate W covered from below by the substrate holding portion 52 is large, and the entire supporting surface Sr of the substrate W is covered by the substrate holding portion 52. It is preferable.
  • the contact of the outside air flow with the substrate W can be reduced, and the substrate W The temperature drop in the central part can be suppressed.
  • the inventor of the present application performed a plating process simulation on the plating processing unit 5 including the substrate holding unit 52 having the structure shown in FIG. 3 and the plating processing unit 5 including the substrate holding unit having another structure. ..
  • the relative temperature decrease of the central portion of the substrate W occurs.
  • the height of each partition portion 43 from the flat surface portion 42 is smaller than 1 mm (for example, 0.5 mm or less), and the distance between the flat surface portion 42 and the beam portion 39 is 1 mm or more (for example, 2 mm or more).
  • the local temperature decrease in the central portion of the substrate W can be effectively suppressed.
  • the temperature of the plating solution L1 on the substrate W is made uniform, and the thickness of the plating film formed on the substrate W is made uniform. It can be expected to improve the sex.
  • FIG. 5 is a perspective view showing a first modified example of the substrate holding part 52.
  • the substrate holder 52 is a temperature adjustment unit 48 that is different from the heating unit 35, and may have a temperature adjustment unit 48 that adjusts the temperature of the substrate holder 52.
  • the temperature adjustment unit 48 is preferably provided so as to adjust the temperature of the portion of the substrate holding portion 52 that faces the substrate W (for example, the central region 90).
  • the specific configuration of such temperature control unit 48 is not limited, and may include any heating means and / or cooling means.
  • the temperature control unit 48 heats or cools the substrate holding part 52 to bring the temperature of the substrate holding part 52 close to the temperature of the substrate W, thereby suppressing substantial heat transfer from the substrate W to the substrate holding part 52. It is possible to prevent an excessive temperature decrease or an excessive temperature increase.
  • the temperature control unit 48 may directly heat and / or cool the substrate holding part 52, or via another member (for example, the rotation motor 523 and / or the rotation shaft 522) connected to the substrate holding part 52.
  • the substrate holder 52 may be indirectly heated and / or cooled.
  • the temperature control unit 48 may have a heater configured by a heating element, or may directly or indirectly heat and / or cool the substrate holding unit 52 via a heat transfer medium such as water. Good.
  • the temperature control unit 48 shown in FIG. 5 has a heater built in the beam portion 39 of the substrate holding portion 52. From the viewpoint of preventing a local temperature drop in the central portion of the substrate W, a position corresponding to the central portion of the substrate W held by the substrate holding portion 52 (specifically, the substrate held by the substrate holding portion 52). It is preferable to dispose the temperature control unit 48 at a position facing the central region 90 of W). When there is a risk that the substrate holding part 52 will be excessively heated by the heat from the rotation motor 523, the temperature adjustment unit 48 uses a heat transfer medium such as water to rotate the rotation motor 523, the rotation shaft 522, and / or the substrate holding portion. The part 52 may be cooled.
  • FIG. 6 is a sectional view showing a second modified example of the substrate holding part 52.
  • the central space 37 of the substrate holding part 52 may be entirely covered and surrounded by the recess forming member 49 on the bottom side (that is, the center support part 40 side).
  • the recess forming member 49 may be formed of the same member as the member forming the chuck member 521, or may be formed of a member different from the chuck member 521.
  • the recess forming member 49 may have a pressure adjusting portion 76 that adjusts the pressure in the central space 37.
  • the pressure adjusting unit 76 shown in FIG. 6 includes a gas supply port 77 that supplies gas to the central space 37 and a gas discharge port 78 that discharges gas from the central space 37.
  • the pressure of the central space 37 can be changed by adjusting the supply and discharge of gas to the central space 37 via the pressure adjusting unit 76.
  • the supply / exhaust between the central space 37 and the pressure adjusting unit 76 is adjusted so that the pressure in the central space 37 is approximately the same as the pressure in the surrounding environment, so that the substrate W on the chuck member 521 is moved to the central space 37. It can be prevented from bending toward.
  • the processing surface Sw of the substrate W is kept horizontal. Therefore, it is preferable to suck the central portion of the substrate W toward the substrate holding portion 52 side.
  • the central portion of the substrate W is made It is possible to suck to the holding portion 52 side.
  • a stopper 79 may be installed in the central space 37, and the stopper 79 may prevent the substrate W from excessively bending toward the substrate holding portion 52 side.
  • the specific installation mode of the stopper 79 is not limited.
  • the stopper 79 shown in FIG. 6 is fixedly provided to the beam portion 39, and includes a portion of the chuck member 521 that is in contact with the substrate W (that is, the partition portion 43 shown in FIG. 3 (not shown in FIG. 6)).
  • the upper surface of the stopper 79 is located at the same height.
  • the temperature of the gas supplied from the gas supply port 77 to the central space 37 may be equal to or higher than the temperature of the supporting surface Sr (particularly the central region 90) of the substrate W on the chuck member 521. In this case, it is possible to suppress the temperature decrease in the central portion of the substrate W.
  • the pressure adjusting unit 76 may adopt a method other than the method using the gas supply port 77 and the gas discharge port 78 shown in FIG. 6, for example, a Bernoulli system utilizing the cyclone effect. That is, a swirling flow may be created in the central space 37 by the gas ejected from the pressure adjusting unit (not shown), and the central part of the substrate W placed on the chuck member 521 may be sucked by the vacuum created by the swirling flow.
  • the pressure adjusting unit includes a gas supply port for ejecting gas toward the central space 37, and the gas ejected from the gas supply port is finally discharged outward between the substrate W and the substrate holding unit 52. To be done.
  • the plating method performed by the plating apparatus 1 includes a plating process on the substrate W.
  • the plating process is performed by the plating processing unit 5.
  • the operation of the plating processing unit 5 described below is controlled by the control unit 3. While the following processing is being performed, clean air is supplied from the fan filter unit 59 into the chamber 51 and flows toward the exhaust pipe 81.
  • the substrate W is carried into the plating processing unit 5, and the substrate W is horizontally held by the substrate holding unit 52 (S1 shown in FIG. 7).
  • a cleaning process of the substrate W held by the substrate holding unit 52 is performed (S2).
  • the rotation motor 523 is driven to rotate the substrate W at a predetermined rotation speed, and subsequently, the nozzle arm 56 positioned at the retreat position is moved to the ejection position and the cleaning liquid is applied to the rotating substrate W.
  • the cleaning liquid L2 is supplied from the nozzle 541 to clean the surface of the substrate W. As a result, the deposits and the like attached to the substrate W are removed from the substrate W.
  • the cleaning liquid L2 supplied to the substrate W is discharged to the drain duct 581.
  • the substrate W is rinsed (S3).
  • the rinse liquid L3 is supplied to the rotating substrate W from the rinse liquid nozzle 551, and the surface of the substrate W is rinsed. As a result, the cleaning liquid L2 remaining on the substrate W is washed away.
  • the rinse liquid L3 supplied to the substrate W is discharged to the drain duct 581.
  • a plating solution deposition step of forming a paddle of the plating solution L1 on the processed surface Sw of the substrate W is performed (S4).
  • the rotation speed of the substrate W is reduced below the rotation speed during the rinse process, and the rotation speed of the substrate W may be set to 50 to 150 rpm, for example. Thereby, the plating film formed on the substrate W can be made uniform. It should be noted that the rotation of the substrate W may be stopped to increase the deposition amount of the plating solution L1. Then, the plating solution L1 is discharged from the plating solution nozzle 531 onto the upper surface of the substrate W (that is, the processing surface Sw).
  • the plating solution L1 stays on the treated surface Sw due to surface tension, and a layer (so-called paddle) of the plating solution L1 is formed. A part of the plating solution L1 flows out from the processing surface Sw and is discharged through the drain duct 581. After a predetermined amount of the plating solution L1 is discharged from the plating solution nozzle 531, the discharge of the plating solution L1 is stopped. Then, the nozzle arm 56 is positioned at the retracted position.
  • the plating solution L1 placed on the substrate W is heated.
  • the rotation speed of the substrate W be maintained at the same speed (or rotation stop) as in the plating solution deposition step.
  • the turning motor 72 of the lid moving mechanism 7 is driven, and the lid 6 positioned at the retracted position is horizontally moved to move upward. Positioned in position. Subsequently, the cylinder 73 of the lid moving mechanism 7 is driven to lower the lid 6 located at the upper position to the lower position, the substrate W is covered by the lid 6, and the periphery of the substrate W is covered. The space is closed.
  • the inert gas is discharged to the inside of the lid 6 from the gas nozzle 661 provided in the ceiling portion 61 of the lid 6 (S6).
  • the air inside the lid 6 is replaced with the inert gas, and the periphery of the substrate W becomes a low oxygen atmosphere.
  • the inert gas is discharged for a predetermined time, and then the discharge of the inert gas is stopped.
  • the plating solution L1 placed on the substrate W is heated (S7).
  • the temperature of the plating solution L1 rises to the temperature at which the components in the plating solution L1 are deposited, the components of the plating solution L1 are deposited on the upper surface of the substrate W to form and grow a plated film.
  • the plating solution L1 is heated and maintained at the deposition temperature for the time required to obtain a plating film having a desired thickness.
  • the lid moving mechanism 7 is driven to position the lid 6 at the retracted position (S8).
  • the plating solution heat treatment step (S5 to S8) for the substrate W is completed.
  • a rinse process of the substrate W is performed (S9).
  • the rotation speed of the substrate W is made higher than the rotation speed at the time of plating processing, and the substrate W is rotated at the same rotation speed as that of the substrate rinse processing step (S3) before the plating processing, for example.
  • the rinse liquid nozzle 551 positioned at the retreat position moves to the discharge position.
  • the rinse liquid L3 is supplied from the rinse liquid nozzle 551 to the rotating substrate W, the surface of the substrate W is cleaned, and the plating liquid L1 remaining on the substrate W is washed away.
  • the substrate W is dried (S10).
  • the substrate W is rotated at a high speed, and, for example, the rotation speed of the substrate W is made higher than the rotation speed of the substrate rinse processing step (S9).
  • the rinse liquid L3 remaining on the substrate W is shaken off and removed, and the substrate W on which the plated film is formed is obtained.
  • an inert gas such as nitrogen (N 2 ) gas may be blown onto the substrate W to accelerate the drying of the substrate W.
  • the substrate W is taken out from the substrate holding section 52 and carried out from the plating processing section 5 (S11).
  • the above-described plating method includes a step of supplying the plating solution L1 (processing solution) to the processing surface Sw of the substrate W held by the substrate holding part 52 and the plating on the processing surface Sw. Heating the liquid L1.
  • the substrate holding part 52 holds the substrate W without contacting the central region 90, and the relative temperature decrease in the central part of the substrate holding part 52 is prevented.
  • the substrate liquid processing apparatus and the substrate liquid processing method according to the present disclosure are effective for a processing liquid other than the plating liquid L1 and a liquid processing other than the plating process.
  • a recording medium (for example, a recording medium) that records a program that, when executed by a computer for controlling the operation of the substrate liquid processing apparatus, causes the computer to control the substrate liquid processing apparatus to execute the substrate liquid processing method described above.
  • the present disclosure may be embodied.

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Abstract

L'invention concerne un appareil de traitement de liquide de substrat pour effectuer un traitement de liquide sur une surface de traitement d'un substrat avec un liquide de traitement comprenant : une unité de maintien de substrat qui maintient un substrat en collant à une surface de support du substrat située sur un côté opposé à la surface de traitement, et peut tourner autour d'un axe de rotation s'étendant dans une direction axiale ; une unité d'alimentation en liquide de traitement qui fournit un liquide de traitement à la surface de traitement du substrat maintenue par l'unité de maintien de substrat ; et une unité de chauffage qui chauffe le liquide de traitement sur la surface de traitement, l'unité de maintien de substrat maintenant le substrat sans entrer en contact avec une zone centrale formée par une partie de la zone de la surface de support à travers laquelle passe l'axe de rotation.
PCT/JP2019/044111 2018-11-16 2019-11-11 Appareil de traitement de liquide de substrat et procédé de traitement de liquide de substrat WO2020100804A1 (fr)

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JP2018-215799 2018-11-16
JP2018215799 2018-11-16

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04354559A (ja) * 1991-05-31 1992-12-08 Tokyo Electron Ltd 回転処理装置
JPH07284716A (ja) * 1994-04-18 1995-10-31 Sony Corp スピンコータ及びそのスピンコータにおける回転板保持方法
JPH0851054A (ja) * 1994-08-08 1996-02-20 Fuji Electric Co Ltd 半導体素子の製造装置
JPH08125000A (ja) * 1994-10-24 1996-05-17 Nec Kyushu Ltd ウェーハチャック
JP2002129344A (ja) * 2000-10-26 2002-05-09 Ebara Corp 無電解めっき装置
JP2006351572A (ja) * 2005-06-13 2006-12-28 Toppan Printing Co Ltd ウェハの真空吸着冶具
JP2018003097A (ja) * 2016-07-01 2018-01-11 東京エレクトロン株式会社 基板液処理装置、基板液処理方法および記録媒体

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04354559A (ja) * 1991-05-31 1992-12-08 Tokyo Electron Ltd 回転処理装置
JPH07284716A (ja) * 1994-04-18 1995-10-31 Sony Corp スピンコータ及びそのスピンコータにおける回転板保持方法
JPH0851054A (ja) * 1994-08-08 1996-02-20 Fuji Electric Co Ltd 半導体素子の製造装置
JPH08125000A (ja) * 1994-10-24 1996-05-17 Nec Kyushu Ltd ウェーハチャック
JP2002129344A (ja) * 2000-10-26 2002-05-09 Ebara Corp 無電解めっき装置
JP2006351572A (ja) * 2005-06-13 2006-12-28 Toppan Printing Co Ltd ウェハの真空吸着冶具
JP2018003097A (ja) * 2016-07-01 2018-01-11 東京エレクトロン株式会社 基板液処理装置、基板液処理方法および記録媒体

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