WO2020098417A1 - 一种基于动态半导体异质结的直流发电机及其制备方法 - Google Patents

一种基于动态半导体异质结的直流发电机及其制备方法 Download PDF

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WO2020098417A1
WO2020098417A1 PCT/CN2019/110024 CN2019110024W WO2020098417A1 WO 2020098417 A1 WO2020098417 A1 WO 2020098417A1 CN 2019110024 W CN2019110024 W CN 2019110024W WO 2020098417 A1 WO2020098417 A1 WO 2020098417A1
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semiconductor layer
dynamic
electrode
semiconductor
heterojunction
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French (fr)
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林时胜
陆阳华
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Zhejiang University
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Zhejiang University
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Priority claimed from CN201811348577.6A external-priority patent/CN109672367B/zh
Priority claimed from CN201910002417.4A external-priority patent/CN109921687B/zh
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Publication of WO2020098417A1 publication Critical patent/WO2020098417A1/zh
Priority to US17/319,110 priority Critical patent/US11522468B2/en
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
    • H02N1/04—Friction generators

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  • the invention relates to a DC generator based on a dynamic semiconductor heterojunction and a preparation method thereof, belonging to the technical field of new green renewable energy acquisition.
  • Nano-generators can convert a variety of natural and green energy in nature, such as: wind energy, mechanical energy, tidal energy, etc., into electrical energy output, which can provide energy for electronic equipment, not limited by environmental factors, to a large extent It can reduce the negative impact of environmental pollution and ease the energy crisis.
  • the current and power generated by it are not high enough, and the output of the AC signal requires an external rectifier circuit and an energy storage circuit, which is not conducive to miniaturization.
  • the generator requires simple and common materials, simple device structure and process flow, and low cost. Its high power density is conducive to the micro-integrated design of the device, and it can provide power to the electronic circuit system in real time without external rectifier circuit and energy storage circuit. It can be widely used in many extreme environments and special medical needs.
  • the object of the present invention is to provide a DC generator based on a dynamic semiconductor heterojunction and a preparation method thereof.
  • the DC generator based on the dynamic semiconductor heterojunction of the present invention includes two parts, one part is a first type semiconductor layer, a first electrode is provided on the back side, and an insulating layer is provided on the front side; Two types of semiconductor layers are provided with a second electrode on one side.
  • the front surface of the first type semiconductor layer and the exposed side of the second type semiconductor layer are in contact with each other and can slide relative to each other to form a dynamic semiconductor heterojunction DC generator.
  • the first semiconductor layer and the second semiconductor layer have different Fermi levels.
  • the first semiconductor layer and the second semiconductor layer are silicon, gallium arsenide, indium gallium arsenide, zinc oxide, germanium, cadmium telluride, gallium nitride, indium phosphide, or the following two One-dimensional layered semiconductor material: one of semiconductor materials such as molybdenum disulfide, black phosphorus, tungsten diselenide, molybdenum telluride, molybdenum diselenide, and tungsten disulfide, and the two materials have different Fermi levels.
  • the insulating layer is one of silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, hafnium oxide, boron nitride and other insulating materials, and the thickness is not more than 500 nm, and more preferably not more than 200 nm.
  • the first electrode and the second electrode are selected from one or more composite electrodes of gold, palladium, silver, copper, titanium, chromium, nickel, platinum, and aluminum, and have a thickness of 1 to 500 nm.
  • the DC generator based on the dynamic semiconductor heterojunction can convert one of wind energy, tidal energy, human body kinetic energy, mechanical energy, marine energy, etc. into electrical signals.
  • the DC generator based on the dynamic semiconductor heterojunction can generate a DC electric signal without an additional rectifier circuit, and the current density is extremely high, which is several orders of magnitude higher than other nano-generators.
  • the method for preparing the above-mentioned dynamic semiconductor heterojunction DC generator includes the following steps:
  • An insulating layer is grown on the front surface of the first semiconductor layer
  • the present invention has the following beneficial effects:
  • the DC generator based on the dynamic semiconductor heterojunction of the present invention does not require the use of piezoelectric semiconductor materials, thus expanding the choice of materials.
  • direct current can be obtained without the need of a coil and an external rectified current. It can directly supply power to an external circuit, has stable operation, simple process steps and device structures, and is conducive to miniaturization.
  • traditional solar cells it does not require light and can generate electricity anytime, anywhere.
  • the principle and structure are the first and advanced. Using the mutual contact movement between two semiconductor materials with different Fermi levels, a DC generator based on a dynamic semiconductor heterojunction is obtained, overcoming the limitations of materials, structure and working principle.
  • the dynamic heterojunction generator can obtain a very high current density, which is 2-3 orders of magnitude higher than that of the traditional nano-generator; further through the energy band design of the interface, the insertion of the intermediate insulating layer can greatly Increase the power generation voltage to achieve real-time power supply to the original electronic devices.
  • FIG. 1 is a schematic structural diagram of a DC generator based on a dynamic semiconductor heterojunction
  • Figure 2 is an I-V curve diagram of a DC generator based on a P-type silicon / N-type gallium arsenide dynamic heterojunction
  • Figure 3 is an energy band diagram based on P-type silicon / N-type gallium arsenide dynamic heterojunction
  • Figure 4 is a graph showing the current output of a DC generator based on a P-type silicon / N-type gallium arsenide dynamic heterojunction over time;
  • Figure 5 I-V curve diagram of DC generator based on P-type silicon / 200nm silicon dioxide / N-type gallium arsenide dynamic heterojunction;
  • FIG. 6 is an energy band diagram of a P-type silicon / silicon dioxide / N-type gallium arsenide dynamic heterojunction DC generator
  • Fig. 7 is a graph showing the voltage output of a DC generator based on a P-type silicon / 200nm silicon dioxide / N-type gallium arsenide dynamic heterojunction with time.
  • Fig. 10 is a graph of voltage and current output of molybdenum disulfide / AlN / P silicon dynamic heterojunction DC generator over time.
  • the DC generator based on the dynamic semiconductor heterojunction of the present invention firstly manufactures the first electrode 2 on the back of the first type of semiconductor material layer 1 and grows an insulating layer 3 on the front side; then on the second type of semiconductor material layer 4 Make the second electrode 5 on the back; then press the insulating layer of the first semiconductor material layer 1 to the front of the second semiconductor material layer 4 to form movable mutual contact, that is, a DC generator based on dynamic semiconductor heterojunction, Direct current output can be obtained by moving between the two semiconductor layers.
  • the DC generator based on the dynamic semiconductor heterojunction of the present invention forms a built-in electric potential when different semiconductor contacts.
  • adding a specific insulating layer can greatly improve the performance of the power generation voltage, etc., and successfully achieve direct energy supply to the original device.
  • the materials required for this generator are simple and common, the device structure and process flow are simple, and the cost is low. In the future, there will be broad development prospects in the in-situ energy supply of electronic circuit systems such as smart wearable devices and real-time monitoring of human health.
  • the electrode is made on the back of the P-type doped silicon wafer, the material is 20nm titanium / 50nm gold electrode, and then the obtained sample is immersed in acetone and isopropyl alcohol in sequence, and then the surface is cleaned and washed with deionized water Remove and blow dry;
  • the electrode is made on the back surface of the N-type doped gallium arsenide sheet, the material is 20nm titanium / 50nm gold electrode, and then the obtained sample is immersed in acetone and isopropanol in sequence, the surface is cleaned, and cleaned with deionized water Then remove and blow dry;
  • the P-type silicon / N-type gallium arsenide dynamic heterojunction DC generator is to press the N-type gallium arsenide sheet on the P-type silicon sheet, contact and move each other to obtain a dynamic heterojunction-based DC generator.
  • the IV curve of the P-type silicon / N-type gallium arsenide heterojunction DC generator is shown in Fig. 2. When they are in contact with each other, they form a built-in electric field with rectification characteristics.
  • the mutual movement of silicon and gallium arsenide will break the diffusion current-drift current balance of the built-in electric field, causing diffused electrons and holes to rebound toward gallium arsenide and silicon under the action of the high-intensity built-in electric field, respectively And generate current to realize the direct conversion of external mechanical energy into DC electrical energy.
  • the generated DC current is about 2 ⁇ A
  • the generated voltage is about 0.7 V
  • the current density is 2 A / m 2 .
  • the electrode is made on the back of the P-type doped silicon wafer, the material is 10nm titanium / 100nm gold electrode, and then the resulting sample is immersed in acetone and isopropanol in turn, and the surface is cleaned, and then washed with deionized water Remove and blow dry;
  • a 20nm layer of silicon dioxide is grown on the front side of the P-type doped silicon wafer;
  • the electrode is made on the back surface of the N-type doped gallium arsenide sheet, the material is 10nm chromium / 100nm gold electrode, and then the obtained sample is immersed in acetone and isopropanol in sequence, the surface is cleaned, and cleaned with deionized water Then remove and blow dry;
  • the P-type silicon / silicon dioxide / N-type gallium arsenide dynamic heterojunction DC generator presses the N-type gallium arsenide sheet on the P-type silicon sheet on which a layer of 20nm silicon dioxide is grown, and contacts and Move each other to output electrical signals.
  • the IV curve of the DC generator of P-type silicon / 20nm silicon dioxide / N-type gallium arsenide heterojunction is shown in Fig.5. When they are in contact with each other, a built-in electric field is formed, which has better rectification characteristics.
  • the height of the interface barrier is increased after the addition of silicon oxide, which intensifies the rebound of the interface diffusion charge and thus increases the output voltage.
  • the generated voltage is about 2.5 V ( Figure 7).
  • the generated DC current is about 1.2 ⁇ A, and the current density is 1.2 A / m 2 .
  • the electrode is made on the back of the P-type doped silicon wafer, the material is 30nm titanium / 70nm gold electrode, and then the obtained sample is immersed in acetone and isopropyl alcohol in sequence, and the surface is cleaned, and then washed with deionized water Remove and blow dry;
  • the material is a 100nm silver electrode, and then immerse the obtained sample in acetone and isopropyl alcohol in sequence, perform surface cleaning treatment, rinse with deionized water, and then remove and blow dry ;
  • the molybdenum disulfide / P-type silicon dynamic heterojunction DC generator is to press molybdenum disulfide on the P-type silicon wafer, contact and move each other to obtain a dynamic heterojunction DC generator.
  • the current and voltage output of the heterojunction DC generator of molybdenum disulfide / P-type silicon over time is shown in Figure 9. It can be seen that the semiconductor material can be reused, producing a stable and continuous direct current output.
  • a layer of 5nm AlN is grown on the front of the P-type doped silicon wafer as an insulating layer;
  • the molybdenum disulfide / AlN / P silicon dynamic heterojunction DC generator presses molybdenum disulfide on a P-type silicon wafer with a layer of 5nm aluminum nitride grown, and contacts and moves to output electrical signals .
  • the voltage and current output changes with time as shown in Figure 10. It can be found that after adding the insulating layer, the voltage is significantly increased, up to 5V.
  • a layer of 50nm aluminum oxide is grown on the front surface of the N-type doped gallium nitride sheet;
  • the material is a 70nm silver electrode, and then immerse the obtained sample in acetone and isopropyl alcohol in sequence, perform surface cleaning treatment, rinse with deionized water, and then remove and blow dry ;
  • the electrode is made on the back of the N-type doped silicon wafer, the material is 10nm titanium / 70nm gold electrode, and then the obtained sample is immersed in acetone and isopropanol in sequence, and the surface is cleaned, and then washed with deionized water Remove and blow dry;
  • the electrode is made on the back of the P-type doped silicon carbide wafer, the material is a 60nm gold electrode, and then the obtained sample is immersed in acetone and isopropanol in sequence, the surface is cleaned, washed with deionized water and taken out. dry;
  • a layer of 100nm aluminum oxide is grown on the front surface of the N-type doped gallium nitride sheet;
  • the electrode is made on the back of the P-type doped gallium arsenide sheet, the material is 15nm chromium / 55nm gold electrode, and then the obtained sample is immersed in acetone and isopropyl alcohol in sequence, and the surface is cleaned and washed with deionized water Then remove and blow dry;
  • the optimal range of the thickness of the insulating layer in the DC generator of the present invention is 5-100 nm.
  • the thickness of the insulating layer is too thick, carriers cannot pass through. If the insulating layer is too thin, the increase in barrier height is limited.
  • Proper insulation layer thickness can greatly increase the output voltage of the generator and limit the current output.
  • the Si material has a high output current density and a relatively low voltage; while the GaAs material has a low output current density but a high voltage.
  • Layered semiconductor materials such as molybdenum disulfide have little resistance when sliding and will not cause scratches, so the semiconductor materials can be reused to produce a continuous DC output.

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Abstract

一种基于动态半导体异质结的直流发电机及其制备方法，该直流发电机包括两部分，一部分为第一种半导体层(1)，在其背面设有第一电极(2)，正面设有一层绝缘层(3)；另一部分为第二种半导体层(4)，在其一侧设有第二电极(5)，第一种半导体层(1)的正面与第二种半导体层(4)的裸露侧相互接触并可相对滑动，形成动态半导体异质结直流发电机，所述的第一种半导体层(1)以及第二种半导体层(4)所用材料的费米能级不同。该发电机电流密度高，且通过界面能带设计以及添加绝缘层，可以提高发电电压。

Description

一种基于动态半导体异质结的直流发电机及其制备方法 技术领域
本发明涉及一种基于动态半导体异质结的直流发电机及其制备方法，属于新型绿色可再生能源获取技术领域。
背景技术
在电子产品快速发展和环境污染、能源危机问题日益严峻的今天，人们开始寻求一种微型、可便携的绿色清洁能源来替代传统的锂电池、电磁发电机、太阳能发电机等，为电子设备提供能量。近些年来，作为一种新型、可再生、微型便携的绿色能源器件，纳米发电机逐渐进入人们的视野，成为研究领域和应用层面中的新星，引起了学术界和产业界的广泛关注。纳米发电机可以将自然界中的多种天然、绿色能量，例如：风能、机械能、潮汐能等等，转化为电能输出，从而可以为电子设备提供能量，不受环境因素的限制，在很大程度上可以减小环境污染问题带来的负面影响，并缓解能源危机。但受限于材料、结构以及工作原理，其发电的电流以及功率还不够高，且输出的是交流电信号需要外加整流电路以及储能电路不利于微型化。
近年来智能可穿戴设备、人体健康实时健康系统等飞速发展，对微型化、高功率密度、轻质化的新型原位能源提出了新的需求。在本发明中，我们利用两种具有不同费米能级的半导体材料之间的相互接触移动，得到了基于动态半导体异质结的直流发电机。结区内异质结横向移动会打破内建电场的扩散电流‐漂移电流平衡，导致扩散电荷在高强度内建电场的作用下定向反弹并产生电流，实现将外界的机械能直接转换为直流电能。在极强的内建电场作用下，其工作电流密度相对于传统的摩擦发电机提升了两个数量级。进一步通过界面能带设计，添加特定的绝缘层可以大大提高发电电压等性能。本发电机所需材料简单普遍、器件结构和工艺流程简单、成本低，其高功率密度有利于器件的微型集成化设计，且其无需外部整流电路以及储能电路即可实时给电子电路系统供电，在很多极限环 境、特殊医学需求等场景中都可以有广泛的应用。
发明内容
本发明的目的在于提供一种基于动态半导体异质结的直流发电机及其制备方法。
本发明的基于动态半导体异质结的直流发电机，该直流发电机包括两部分，一部分为第一种半导体层，在其背面设有第一电极，正面设有一层绝缘层；另一部分为第二种半导体层，在其一侧设有第二电极，第一种半导体层的正面与第二种半导体层的裸露侧相互接触并可相对滑动，形成动态半导体异质结直流发电机，所述的第一种半导体层以及第二种半导体层所用材料的费米能级不同。
上述技术方案中，所述的第一种半导体层和第二种半导体层为硅、砷化镓、铟镓砷、氧化锌、锗、碲化镉、氮化镓、磷化铟、或以下二维层状半导体材料：二硫化钼、黑磷、二硒化钨、二碲化钼、二硒化钼、二硫化钨等半导体材料中的一种，且两种材料的费米能级不同。
所述的绝缘层是二氧化硅、氮化硅、氧化铝、氮化铝、氧化铪、氮化硼等绝缘材料中的一种，厚度不超过500nm，更优选不超过200nm。
所述的第一电极与第二电极均选自金、钯、银、铜、钛、铬、镍、铂和铝中的一种或者几种的复合电极，厚度为1‐500nm。
所述的基于动态半导体异质结的直流发电机，可以将风能、潮汐能、人体动能、机械能、海洋能等中的一种转换为电信号。
所述的基于动态半导体异质结的直流发电机，无需外加整流电路即可产生直流电信号，且电流密度极高，比其他纳米发电机高几个数量级。
制备上述的基于动态半导体异质结的直流发电机的方法，其特征在于，包括如下步骤：
1)在第一种半导体层背面制作第一电极；
2)在第一种半导体层正面生长一层绝缘层；
3)在第二种半导体层背面制作第一电极；
4)将第二种半导体层正面压到第一种半导体层绝缘层表面形成可滑动接触，得到基于动态半导体异质结的直流发电机，将两种半导体层相互移动，即可产生直流电信号。
本发明与现有技术相比具有的有益效果是：
与传统的纳米发电机相比，本发明的基于动态半导体异质结的直流发电机，不需要使用压电半导体材料，因此扩展了材料的选择。与传统的电磁发电机相比，且不需要线圈以及外加整流电流即可得到直流电，可以直接给外部电路供电，工作稳定，工艺步骤和器件结构简单，有利于微型集成化。与传统的太阳能电池相比，不需要光照，可以实现全天候的随时随地发电。原理与结构上属于首创，具有先进性。利用两种具有不同费米能级的半导体材料之间的相互接触移动，得到了基于动态半导体异质结的直流发电机，克服了对材料、结构以及工作原理的限制。在极强内建电场的作用下，动态异质结发电机可以得到极高的电流密度，比传统纳米发电机高2-3个数量级；进一步通过界面的能带设计，插入中间绝缘层可以大大提高发电电压，实现对电子原器件的实时供电。
附图说明
图1为基于动态半导体异质结的直流发电机的结构示意图；
图2为基于P型硅/N型砷化镓动态异质结的直流发电机的I‐V曲线图；
图3为基于P型硅/N型砷化镓动态异质结的能带图；
图4为基于P型硅/N型砷化镓动态异质结的直流发电机的电流输出随时间变化图；
图5基于P型硅/200nm二氧化硅/N型砷化镓动态异质结的直流发电机的I‐V曲线图；
图6为基于P型硅/二氧化硅/N型砷化镓动态异质结直流发电机的能带图；
图7为基于P型硅/200nm二氧化硅/N型砷化镓动态异质结的直流发电机的电压输出随时间变化图。
图8为基于P型硅/N型硅动态异质结的直流发电机的电流输出随时间变化图；
图9为二硫化钼/P型硅的异质结直流发电机的电流、电压输出随时间变化图；
图10为二硫化钼/AlN/P型硅动态异质结直流发电机电压、电流输出随时间变化图。
具体实施方式
下面结合附图和具体实施例对本发明做进一步说明。
参照图1，本发明的基于动态半导体异质结的直流发电机，先在第一种半导体材料层1背面制作第一电极2，正面生长一层绝缘层3；再在第二种半导体材料层4背面制作第二电极5；之后将第一种半导体材料层1绝缘层一面压到第二种半导体材料层4正面形成可移动的相互接触，即得到基于动态半导体异质结的直流发电机，两种半导体层之间相互移动即可得到直流电输出。本发明的基于动态半导体异质结的直流发电机，不同半导体接触即形成一个内建电势。结区内异质结横向相互移动会打破内建电场的扩散电流‐漂移电流平衡，导致扩散电荷在高强度内建电场的作用下定向反弹并产生电流，实现将外界的机械能直接转换为直流电能，无需外接整流或者储能电路即可为各种电子设备和产品提供可再生、清洁能源。与传统的电磁感应发电机、纳米发电机相比，本发电机无需添加大体积的线圈且电流密度极高，可以用来做轻质化的微型、便携式原位能源。进一步通过界面能带设计，添加特定的绝缘层可以大大提高发电电压等性能，成功实现对原器件的直接供能。本发电机所需材料简单普遍、器件结构和工艺流程简单、成本低，未来在智能可穿戴设备、人体健康实时监控等电子电路系统原位能源供应上有着广阔的发展前景。
实施例1：
1)在P型掺杂的硅片上的背面制作电极，材质为20nm钛/50nm金电极，然后将得到的样品依次浸入丙酮和异丙醇中，进行表面清洗处理，用去离子水清洗后取出吹干；
2)在P型掺杂的硅片上的正面不生长绝缘层；
3)在N型掺杂的砷化镓片上的背面制作电极，材质为20nm钛/50nm金电极，然后将得到的样品依次浸入丙酮和异丙醇中，进行表面清洗处理，用去离子水清洗后取出吹干；
4)将N型砷化镓片压在P型硅片上，接触并相互移动即可得到一个基于动态半导体异质结的直流发电机，产生电信号。
所述的P型硅/N型砷化镓动态异质结直流发电机，是将N型砷化镓片压在P型硅片上，接触并相互移动即可得到一个基于动态异质结的直流发电机。P型硅/N型砷化镓异质结的直流发电机的I-V曲线图如图2所示，相互接触即形成一个内建电场，具有整流特性。如图3所示，硅和砷化镓的相互移动会打破内建电场的扩 散电流-漂移电流平衡，导致扩散电子和空穴在高强度内建电场的作用下分别向砷化镓和硅反弹并产生电流，实现将外界的机械能直接转换为直流电能。如图4所示，产生的直流电流大小约为2μA，产生的电压大小约为0.7V，电流密度为2A/m 2。
实施例2：
1)在P型掺杂的硅片上的背面制作电极，材质为10nm钛/100nm金电极，然后将得到的样品依次浸入丙酮和异丙醇中，进行表面清洗处理，用去离子水清洗后取出吹干；
2)在P型掺杂的硅片上的正面生长一层20nm的二氧化硅；
3)在N型掺杂的砷化镓片上的背面制作电极，材质为10nm铬/100nm金电极，然后将得到的样品依次浸入丙酮和异丙醇中，进行表面清洗处理，用去离子水清洗后取出吹干；
4)将N型砷化镓片压在生长了一层20nm二氧化硅的P型硅片上，接触并相互移动即可得到一个基于动态异质结的直流发电机，产生电信号。
所述的P型硅/二氧化硅/N型砷化镓动态异质结直流发电机，将N型砷化镓片压在生长了一层20nm二氧化硅的P型硅片上，接触并相互移动即可输出电信号。P型硅/20nm二氧化硅/N型砷化镓异质结的直流发电机的I-V曲线图如图5所示，相互接触即形成一个内建电场，具有更好整流特性。如图6所示，与P型硅/N型砷化镓结相比，添加而氧化硅之后界面势垒高度提高，加剧了界面扩散电荷的反弹从而提升了输出电压，产生电压大小大约为2.5V(图7)。产生的直流电流大小约为1.2μA，电流密度为1.2A/m 2。
实施例3：
1)在P型掺杂的硅片上的背面制作电极，材质为30nm钛/70nm金电极，然后将得到的样品依次浸入丙酮和异丙醇中，进行表面清洗处理，用去离子水清洗后取出吹干；
2)在P型掺杂的硅片上的正面不生长绝缘层；
3)在N型掺杂的硅片上的背面制作电极，材质为100nm银电极，然后将得到的样品依次浸入丙酮和异丙醇中，进行表面清洗处理，用去离子水清洗后取出吹干；
4)将N型硅片压在P型硅片上，接触并相互移动即可得到一个基于动态异质结 的直流发电机，产生电信号，产生的直流电流大小约为20μA，如图8所示。产生的电压大小约为0.1V，电流密度为107A/m 2。
实施例4：
1)在P型掺杂的硅片上制作背电极，材质为50nm银电极，然后将得到的样品先放入丙酮溶液中清洗，倒掉清洗液后再用异丙醇溶液去除残余的丙酮，最后用去离子水冲洗后取出吹干；
2)在P型掺杂的硅片正面不生长绝缘层；
3)在二硫化钼上制作背电极，材质为50nm银电极；
4)将二硫化钼压在P型硅片上，接触并相互移动即可得到一个动态异质结直流发电机，产生电信号。
所述的二硫化钼/P型硅动态异质结直流发电机，是将二硫化钼压在P型硅片上，接触并相互移动即可得到动态异质结直流发电机。二硫化钼/P型硅的异质结直流发电机的电流、电压输出随时间变化图如图9所示。可见半导体材料可重复利用，产生了稳定连续的直流电输出。
实施例5：
1)在P型掺杂的硅片上制作背电极，材质为5nm钛/50nm金电极，然后将得到的样品先放入丙酮溶液中清洗，倒掉清洗液后再用异丙醇溶液去除残余的丙酮，最后用去离子水冲洗后取出吹干；
2)在P型掺杂的硅片正面生长一层5nm的AlN作为绝缘层；
3)在二硫化钼上制作背电极，材质为10nm钛/50nm金电极；
4)将二硫化钼压在P型硅片上，接触并相互移动即可得到一个动态异质结直流发电机，产生电信号。
所述的二硫化钼/AlN/P型硅动态异质结直流发电机，将二硫化钼压在生长了一层5nm氮化铝的P型硅片上，接触并相互移动即可输出电信号。其电压、电流输出随时间变化图如图10所示，可以发现增加绝缘层后，电压明显大幅提升，最高可达5V。
实施例6：
1)在N型掺杂的氮化镓片上的背面制作电极，材质为7nm铬/70nm金电极，然后将得到的样品依次浸入丙酮和异丙醇中，进行表面清洗处理，用去离子水清洗 后取出吹干；
2)在N型掺杂的氮化镓片的正面生长一层50nm的氧化铝；
3)在P型掺杂的硅片上的背面制作电极，材质为70nm银电极，然后将得到的样品依次浸入丙酮和异丙醇中，进行表面清洗处理，用去离子水清洗后取出吹干；
4)将P型硅片压在N型氮化镓片上，接触并相互移动即可得到一个基于动态异质结的直流发电机，产生电信号。
实施例7
1)在N型掺杂的硅片上的背面制作电极，材质为10nm钛/70nm金电极，然后将得到的样品依次浸入丙酮和异丙醇中，进行表面清洗处理，用去离子水清洗后取出吹干；
2)在N型掺杂的硅片的正面生长一层10nm的氮化硅；
3)在P型掺杂的碳化硅片上的背面制作电极，材质为60nm金电极，然后将得到的样品依次浸入丙酮和异丙醇中，进行表面清洗处理，用去离子水清洗后取出吹干；
4)将P型碳化硅片压在N型硅片上，接触并相互移动即可得到一个基于动态异质结的直流发电机，产生电信号。
实施例8
1)在N型掺杂的氮化镓片上的背面制作电极，材质为15nm铬/55nm金电极，然后将得到的样品依次浸入丙酮和异丙醇中，进行表面清洗处理，用去离子水清洗后取出吹干；
2)在N型掺杂的氮化镓片的正面生长一层100nm的氧化铝；
2)在P型掺杂的砷化镓片上的背面制作电极，材质为15nm铬/55nm金电极，然后将得到的样品依次浸入丙酮和异丙醇中，进行表面清洗处理，用去离子水清洗后取出吹干；
3)将P型砷化镓片压在N型氮化镓片上，接触并相互移动即可得到一个基于动态异质结的直流发电机，产生电信号。
经大量实验研究发现，本发明的直流发电机中绝缘层的厚度最佳范围为5-100nm，当绝缘层厚度过厚时载流子无法通过，绝缘层太薄则势垒高度增加有限。适当的绝缘层厚度可以大大提高发电机的输出电压，并且有限的降低电流输 出。Si材料输出电流密度高，电压相对较低；而砷化镓材料的输出电流密度较低，但电压较高。二硫化钼等的层状半导体材料，在滑动时，阻力小，不会产生划痕，因而半导体材料可重复利用，产生连续的直流电输出。

Claims (6)

  1. 一种基于动态半导体异质结的直流发电机，其特征在于，该直流发电机包括两部分，一部分为第一种半导体层(1)，在其背面设有第一电极(2)，正面设有一层绝缘层(3)；另一部分为第二种半导体层(4)，在其一侧设有第二电极(5)，第一种半导体层的正面与第二种半导体层的裸露侧相互接触并可相对滑动，形成动态半导体异质结直流发电机，所述的第一种半导体层(1)以及第二种半导体层(4)所用材料的费米能级不同。
  2. 根据权利要求1所述的一种基于动态半导体异质结的直流发电机，其特征在于，所述的第一种半导体层(1)以及第二种半导体层(4)均选自硅、砷化镓、铟镓砷、氧化锌、锗、碲化镉、氮化镓、磷化铟、或以下二维层状半导体材料：二硫化钼、黑磷、二硒化钨、二碲化钼、二硒化钼、二硫化钨，且第一种半导体层(1)和第二种半导体层(4)的两种材料的费米能级不同。
  3. 根据权利要求1所述的一种基于动态半导体异质结的直流发电机，其特征在于，所述的绝缘层(3)选自二氧化硅、氮化硅、氧化铝、氮化铝、氮化硼、氧化铪等绝缘材料中的一种，厚度不超过500nm。
  4. 根据权利要求1所述的一种基于动态半导体异质结的直流发电机，其特征在于，所述的第一电极(2)与第二电极(5)均选自金、钯、铜、银、钛、铬、镍、铂和铝中的一种或者几种的复合电极，厚度为1-500nm。
  5. 根据权利要求1所述的一种基于动态半导体异质结的直流发电机，其特征在于，该直流发电机用于将风能、潮汐能、人体动能、机械能、海洋能等中的任一种转换为直流电信号输出。
  6. 制备如权利要求1-5任一项所述的一种基于动态半导体异质结的直流发电机，其特征在于，制备过程包括如下步骤：
    1)在第一种半导体层(1)背面制作第一电极(2)；
    2)在第一种半导体层(1)正面生长一层绝缘层(3)；
    3)在第二种半导体层(4)背面制作第一电极(5)；
    4)将第二种半导体层(4)正面压到第一种半导体层(1)绝缘层(3)上形成可滑动的接触，得到基于动态半导体异质结的直流发电机，将两种半导体层相对移动，即可产生直流电信号。
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