WO2020095855A1 - Dispositif de transmission - Google Patents
Dispositif de transmission Download PDFInfo
- Publication number
- WO2020095855A1 WO2020095855A1 PCT/JP2019/043140 JP2019043140W WO2020095855A1 WO 2020095855 A1 WO2020095855 A1 WO 2020095855A1 JP 2019043140 W JP2019043140 W JP 2019043140W WO 2020095855 A1 WO2020095855 A1 WO 2020095855A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thermoelectric conversion
- conversion element
- unit
- card
- power
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 34
- 230000005540 biological transmission Effects 0.000 claims description 33
- 230000020169 heat generation Effects 0.000 claims description 10
- 230000005611 electricity Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 35
- 230000006870 function Effects 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 239000012212 insulator Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 238000005452 bending Methods 0.000 description 4
- 230000005415 magnetization Effects 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 230000005422 Nernst effect Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- 230000005355 Hall effect Effects 0.000 description 2
- 125000002066 L-histidyl group Chemical group [H]N1C([H])=NC(C([H])([H])[C@](C(=O)[*])([H])N([H])[H])=C1[H] 0.000 description 2
- 230000005678 Seebeck effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000002547 anomalous effect Effects 0.000 description 2
- 230000036760 body temperature Effects 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- MTRJKZUDDJZTLA-UHFFFAOYSA-N iron yttrium Chemical compound [Fe].[Y] MTRJKZUDDJZTLA-UHFFFAOYSA-N 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
Abstract
Le problème soulevé par la présente invention est de fournir un dispositif de transmission au moyen duquel il soit possible de faire fonctionner un circuit même lorsque la puissance électrique qui peut être générée est faible. La solution selon la présente invention porte sur un dispositif de transmission comprenant un élément de conversion thermoélectrique, un film de génération de chaleur formé sur l'élément de conversion thermoélectrique, une unité d'accumulation d'électricité, une unité de commande et une unité de transmission, et caractérisé en ce que l'élément de conversion thermoélectrique accumule la puissance électrique générée en raison de la chaleur produite par un utilisateur frottant le film de génération de chaleur dans l'unité d'accumulation d'électricité, la puissance électrique est fournie par l'unité d'accumulation d'électricité à l'unité de commande et à l'unité de transmission, et les informations délivrées par l'unité de commande sont transmises par l'unité de transmission.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-211385 | 2018-11-09 | ||
| JP2018211385 | 2018-11-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2020095855A1 true WO2020095855A1 (fr) | 2020-05-14 |
Family
ID=70612219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2019/043140 WO2020095855A1 (fr) | 2018-11-09 | 2019-11-01 | Dispositif de transmission |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2020095855A1 (fr) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013021876A1 (fr) * | 2011-08-09 | 2013-02-14 | 日本電気株式会社 | Dispositif de détection de position |
| CN203251287U (zh) * | 2013-01-24 | 2013-10-23 | 国民技术股份有限公司 | 一种音频卡 |
| US20160013671A1 (en) * | 2013-12-19 | 2016-01-14 | Beijing Boe Optoelectronics Technology Co., Ltd. | Mobile communication terminal |
-
2019
- 2019-11-01 WO PCT/JP2019/043140 patent/WO2020095855A1/fr active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013021876A1 (fr) * | 2011-08-09 | 2013-02-14 | 日本電気株式会社 | Dispositif de détection de position |
| CN203251287U (zh) * | 2013-01-24 | 2013-10-23 | 国民技术股份有限公司 | 一种音频卡 |
| US20160013671A1 (en) * | 2013-12-19 | 2016-01-14 | Beijing Boe Optoelectronics Technology Co., Ltd. | Mobile communication terminal |
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