WO2020094220A1 - Circuit intégré et cellule standard associée - Google Patents

Circuit intégré et cellule standard associée Download PDF

Info

Publication number
WO2020094220A1
WO2020094220A1 PCT/EP2018/080402 EP2018080402W WO2020094220A1 WO 2020094220 A1 WO2020094220 A1 WO 2020094220A1 EP 2018080402 W EP2018080402 W EP 2018080402W WO 2020094220 A1 WO2020094220 A1 WO 2020094220A1
Authority
WO
WIPO (PCT)
Prior art keywords
gate
integrated circuit
isolation
diffusion layer
standard cell
Prior art date
Application number
PCT/EP2018/080402
Other languages
English (en)
Inventor
Stephane Badel
Original Assignee
Huawei Technologies Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co., Ltd. filed Critical Huawei Technologies Co., Ltd.
Priority to PCT/EP2018/080402 priority Critical patent/WO2020094220A1/fr
Priority to CN201880099162.1A priority patent/CN112970110B/zh
Priority to EP18799753.1A priority patent/EP3867951A1/fr
Publication of WO2020094220A1 publication Critical patent/WO2020094220A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays
    • H01L2027/11868—Macro-architecture
    • H01L2027/11874—Layout specification, i.e. inner core region
    • H01L2027/11875—Wiring region, routing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/765—Making of isolation regions between components by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823871—Complementary field-effect transistors, e.g. CMOS interconnection or wiring or contact manufacturing related aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors

Definitions

  • the present invention relates to the field of integrated circuits, particularly CMOS integrated circuits including multiple transistors and/or multiple standard cells. These integrated circuits include one or more diffusion layers.
  • the present invention is particularly concerned with structuring e.g. transistors in such diffusion layers, particularly in continuous diffusion layers without breaks.
  • the present invention thus presents an integrated circuit including an isolation gate for providing electrical isolation between different regions of at least one such diffusion layer.
  • the isolation gate can provide isolation between different transistors and/or between different standard cells of the integrated circuit.
  • diffusion breaks in diffusion layers which are conventionally required to electrically isolate different transistors of an integrated circuit from another.
  • the diffusion breaks induce variations in the transistor parameters because:
  • the diffusion breaks are typically filled with an oxide. Thus, additional stress is induced by the material mismatch, wherein this stress also varies depending on the position of transistors e.g. whether they are near to or far from a diffusion break. If the diffusion breaks would be removed, i.e. a continuous diffusion layer would be formed, sources of parametric variation could be eliminated. However, in this case another way of achieving electrical isolation between different transistors of an integrated circuit, formed in the diffusion layer, has to be provided. For instance, a transistor could be formed where a diffusion break is removed, and the transistor could be forced into the off-state to achieve the required electrical isolation.
  • FIG. 9 A standard cell of a conventional integrated circuit with diffusion breaks is depicted in FIG. 9.
  • the integrated circuit includes:
  • a transistor is defined at the intersection of an active gate and a diffusion layer.
  • the diffusion layers are interrupted (diffusion break) at the left and right edge of the cells, in order to provide electrical isolation with any other standard cell that may be placed nearby. Additionally, diffusion layers may be interrupted, where electrically necessary, inside the standard cell area.
  • FIG. 10 The same standard cell, however if it would be modified to make the diffusion layers continuous, i.e. with diffusion breaks removed, is illustrated in FIG. 10.
  • the modification extends all diffusion layers in the left and right directions, resulting in continuous diffusion layers.
  • isolation gates would be inserted into the standard cell. These isolation gates are physically no different from regular active gates, but their function is to provide electrical isolation between two diffusion layer regions adjacent on their left and right sides.
  • the isolation gates of FIG. 10 must be connected to the highest or lowest potential, depending on the type (P or N, respectively) of the diffusion layer. This can be achieved by connecting them to one of the power rails (in fact, one rail referred to as“power” is at the highest potential, and one rail referred to as“ground” is at the lowest potential, e.g. ground).
  • FIG. 11 and FIG. 12 Two conventional schemes are shown in FIG. 11 and FIG. 12, respectively.
  • the isolation gates are tied to a power rail by a local interconnect.
  • this requires increasing the cell area, which is detrimental.
  • FIG. 11 a first scheme is illustrated in FIG. 11.
  • the scheme introduces a second local interconnect to connect the isolation gate to an adjacent first local interconnect (on either side (B), or both sides (A)).
  • This scheme is, however, only applicable when at least one adjacent local interconnect, typically one for the source (S), is connected to a power rail. If this is not the case, as it is shown in (C) where two local interconnects for drains (D) are adjacent to the isolation gate and both not connected to a power rail, an additional local interconnect (here for (S)) and gate have to be inserted, as it is shown in (D). This results in an area increase of the integrated circuit, which should be avoided.
  • FIG. 12 A second scheme is illustrated in FIG. 12.
  • the scheme introduces a second local interconnect to connect the isolation gate to a nearby power rail.
  • first and second local interconnects are not electrically isolated from each other, a certain minimum spacing is required between the second local interconnect, which connects the isolation gate to the power rail and any adjacent first local interconnect, which is at a different potential.
  • the present invention aims to improve conventional integrated circuits and the conventional schemes to eliminate diffusion breaks.
  • An objective is thereby to provide a new scheme to electrically isolate regions of a diffusion layer from another, without using a diffusion break and without increasing the cell or circuit area.
  • the scheme should further be applicable in a flexible manner, i.e. there should not be cases where the scheme does not work.
  • a goal of the scheme should be to reduce or eliminate sensitivity to process variations, which impact on the performance or yield.
  • a performance of an integrated circuit according to the scheme of the invention should not be worse, preferably even better, than that of a conventional integrated circuit.
  • no placement constraints should be introduced.
  • the present invention proposes modifying an integrated circuit, particularly a standard cell thereof, to obtain diffusion layers with fewer or even no diffusion breaks.
  • isolation gates are used.
  • the isolation gates are tied to a nearby power rail (“power” or“ground”). This is achieved by means of processing a gate-via, by which the power rail is directly connected to the isolation gate.
  • the processing of the gate- via particularly results a guaranteed minimum spacing to an adjacent local interconnect, and thus an improved reliability of the integrated circuit.
  • a first aspect of the invention provides an integrated circuit, comprising: at least one power rail, at least one diffusion layer, at least one isolation gate provided on the diffusion layer and configured to electrically isolate a first region of the diffusion layer from a second region of the diffusion layer, at least one gate-via vertically connecting the isolation gate to the power rail.
  • the power rail may be at the highest potential (“power”) or lowest potential (“ground”) depending on the type (P or N) of the diffusion layer.
  • the diffusion layer may particularly be a continuous diffusion layer, which extends from one edge of the integrated circuit to the opposite edge, or from one edge of a standard cell of the integrated circuit to its opposite edge.
  • the gate-via may connect a layer of the integrated circuit, in which the power rail is formed, with a layer, in which the isolation gate is formed, particularly in an intersection of isolation gate and power rail when the integrated circuit is viewed from the top.
  • the isolation gate provides electrical isolation, e.g. between transistors or between cells of the integrated circuit, and thus replaces diffusion breaks. Accordingly, the above- mentioned disadvantages of the diffusion breaks can be removed or suppressed.
  • the gate- via makes an additional interconnect, as provided in the conventional schemes (see FIG. 9 or FIG. 10) unnecessary, and allows connecting the isolation gate and power rail without increasing the area of the integrated circuit or cell.
  • the gate-via directly connects the underside of the power rail to the top of the isolation gate.
  • the isolation gate can be tied to the power rail in a simple manned without increasing the area.
  • the width of the gate-via is smaller than, and arranged within, the width of the isolation gate.
  • the integrated circuit further comprises at least one local interconnect vertically connecting the diffusion layer, wherein the gate- via is electrically isolated from the local interconnect.
  • Such a local interconnect connects to a region of the diffusion layer acting as source or drain of a transistor.
  • the shape of the gate-via provides a determined minimum spacing to the local interconnect regardless of the position of the gate-via on top of the isolation gate. Thus, shorts between the isolation gate and the local interconnect can be avoided by means of carefully designing the shape of the gate-via.
  • the isolation gate is capped with a dielectric, and/or the local interconnect is capped with a dielectric, and/or the isolation gate is capped with a different dielectric than the local interconnect.
  • the dielectric(s) supports avoiding shorts between the isolation gate and the local interconnect cause by the gate-via and/or by a via connecting the local interconnect to the power rail.
  • the top of the local interconnect is arranged at a lower level of the integrated circuit than the top of the isolation gate, or the top of the local interconnect is arranged at a higher level of the integrated circuit than the top of the isolation gate.
  • the gate-via comprises a step defining a narrower lower portion and a broader upper portion, the narrower lower bottom portion being connected to the top of the isolation gate and the broader upper portion being connected to the underside of the power rail, and the underside of the broader upper portion is arranged at a higher level of the integrated circuit than the top of the local interconnect.
  • the isolation gate extends perpendicular to the power rail, and the gate-via is arranged in an intersecting area of the isolation gate and the power rail in a top-view of the integrated circuit.
  • the integrated circuit comprises a plurality of standard cells, wherein at least one standard cell includes at least one power rail, at least one diffusion layer, at least one isolation gate, and at least one gate-via vertically connecting the isolation gate to the power rail.
  • At least one isolation gate is arranged and configured to electrically isolate a first region of the diffusion layer in a standard cell from a second region of the diffusion layer in a neighboring standard cell.
  • At least one isolation gate is arranged and configured to electrically isolate a first region of the diffusion layer associated with a transistor in a standard cell from a second region of the diffusion layer associated with a neighboring transistors in the same standard cell.
  • the integrated circuit comprises in at least one standard cell: at least two power rails extending from a first edge to a second opposite edge of the standard cell, at least two diffusion layers extending in a direction from the first edge towards the second edge of the standard cell, wherein one diffusion layer is arranged close to one of the power rails and the other diffusion layer is arranged close to the other one of the power rails, and a plurality of isolation gates, wherein one or more isolation gates of a first set of isolation gates are connected by a gate-via to one of the power rails and one or more isolation gates of a second set of isolation gates are connected by a gate-via to the other one of the power rails.
  • two of the isolation gates are arranged and configured to electrically isolate a first region of a diffusion layer in the standard cell from a second region of the diffusion layer in a first neighboring standard cell adjacent the first edge and from a third region of the diffusion layer in a second neighboring standard cell adjacent the second edge.
  • the integrated circuit comprises at least one active gate defining a transistor, and at least two local interconnects defining respectively a source and a drain of the transistor.
  • the device of the first aspect may be manufactured by making use of a self-aligned gate- via contact process.
  • the gate-via provides a connection directly from the power rail to the isolation gate, without adding an additional second local interconnect, and the resulting gate- via is electrically isolated from any adjacent local interconnect (e.g. for a source or drain diffusion region) thanks to its particular shape and/or other measures described above.
  • any adjacent local interconnect e.g. for a source or drain diffusion region
  • a continuous diffusion layer can be provided, or at least a number of diffusion breaks can be reduced, to improve circuit performance by enhancing the channel stress.
  • a continuous diffusion layer can eliminate any variation or sensitivity caused conventionally by diffusion breaks (e.g. layout-dependent effects (LDE)).
  • LDE layout-dependent effects
  • a standard cell area can be reduced, or at least is not increased, and no placement constraints (such as forbidden drain-drain abutment) are introduced.
  • FIG. 1 shows an integrated circuit according to an embodiment of the invention.
  • FIG. 2 shows an integrated circuit according to an embodiment of the invention.
  • FIG. 3 shows an integrated circuit with multiple standard cells according to an embodiment of the invention.
  • FIG. 4 shows gate-vias in an integrated circuit according to an embodiment of the invention.
  • FIG. 5 shows a gate-vias in an integrated circuit according to an embodiment of the invention.
  • FIG. 6 shows an isolation gate, diffusion layer, and local interconnects in an integrated circuit according to an embodiment of the invention.
  • FIG. 7 shows an isolation gate, diffusion layer, and local interconnects in an integrated circuit according to an embodiment of the invention.
  • FIG. 8 shows an isolation gate, diffusion layer, and local interconnects in an integrated circuit according to an embodiment of the invention.
  • FIG. 9 shows a conventional integrated circuit with diffusion breaks.
  • FIG. 10 shows an exemplary integrated circuit without diffusion breaks.
  • FIG. 11 shows a first conventional scheme for eliminating diffusion breaks.
  • FIG. 12 shows a second conventional scheme for eliminating diffusion breaks.
  • FIG. 1 shows an integrated circuit 100 according to a general embodiment of the invention, wherein the integrated circuit 100 is shown in a top view.
  • the integrated circuit 100 may specifically be a CMOS integrated circuit, in which multiple transistors are defined by diffusion layers, gates and interconnects to source/drain regions of the diffusion layers, respectively.
  • the integrated circuit 100 may comprise multiple standard cells, wherein each standard cell may have the same design, and wherein standard cells may be arranged adjacent one another.
  • the integrated circuit 100 shown in FIG. 1 includes at least one power rail 101 (in the following this power rail 101 may be at the highest potential“power” or lowest potential“ground”), at least one diffusion layer 102, and at least one isolation gate 103 provided on the diffusion layer 102 and configured to electrically isolate a first region l02a of the diffusion layer 102 from a second region l02b of the diffusion layer 102.
  • the isolation gate 103 may be forced into an“off-state” by connecting it to the power rail 101.
  • the diffusion layer 102 under the isolation gate 103 is depleted, thus separating the first diffusion layer region l02a on one side of the isolation gate 103 from the second diffusion layer region l02b on the other side of the isolation gate 103.
  • the isolation gate 103 is connected to the power rail 101 by at least one gate- via 104 of the integrated circuit, which vertically connects the isolation gate 103 and the power rail 101 (wherein the vertical direction is the direction along which multiple layers of the integrated circuit 100 are fabricated/arranged; in FIG. 1 it is the direction into the page).
  • the isolation gate 103 may specifically extend perpendicular to the power rail 101. Further, the gate- via 104 may be arranged in an intersecting area of the isolation gate 103 and the power rail 101 in the top view of the integrated circuit 100.
  • the integrated circuit 101 may notably include a plurality of standard cells, whereby each cell may include elements as are shown in FIG. 1, i.e. at least one diffusion layer 102, at least one isolation gate 103, and at least one gate-via 104 vertically connecting the isolation gate 103 and the power rail 101.
  • FIG. 2 shows an integrated circuit 100 according to an embodiment of the invention in a top view, which builds on the integrated circuit 100 shown in FIG. 1. Same elements in FIG. 1 and FIG. 2 are accordingly labelled with the same reference signs and function likewise.
  • FIG. 2 shows particularly in more detail some relevant features of the proposed integrated circuit 100, and illustrates these features exemplarily in a (simplified) standard cell 200 of the integrated circuit 100.
  • This standard cell 200 comprises: • Two diffusion layers 102 extending continuously between a left and right edge of the standard cell 200.
  • each gate 103 overlapping the cell’s left or right edge, and each gate 103 being connected to one of two power rails 101 (i.e.“power” (P-type) or“ground” (N-type)), specifically by a gate-via 104 each.
  • P-type power rails 101
  • N-type ground rails 101
  • the four isolation gates 103 shown in FIG. 2 are arranged and configured to electrically isolate the diffusion layer 102 within the standard cell 200 from the same diffusion layer 102 extending into neighboring standard cells 200. That is, the diffusion layer 102 may be continuous over more than one standard cell 200 of the integrated circuit 100.
  • FIG. 3 shows an integrated circuit 100 according to an embodiment of the invention in a top view, which builds on the integrated circuit 100 shown in FIG. 2. Same elements in FIG. 2 and FIG. 3 are accordingly labelled with the same reference signs and function likewise.
  • FIG. 3 shows particularly a more complex standard cell 200 of the integrated circuit 100 (which has multiple standard cells 200), wherein the standard cell 200 includes:
  • isolation gates 103 placed where required, particularly placed between transistors in the cell 200 and placed at the edges of the cell 200, i.e. between the cell 200 and a neighboring cell.
  • the isolation gates 103 are each tied to a power rail 101 (“power or“ground”), for instance, by placing a gate via 104 directly under the power rail 101.
  • FIG. 3 also shows that the integrated circuit 100 may include local interconnects 300, which vertically connect to one of the diffusion layers 102. Some local interconnects may be connected by vias 301 to a power rail 101. The gate-vias 104 are electrically isolated from the local interconnect 300. Further, the integrated circuit 100 may comprise at least one active gate 303 for defining a transistor, wherein a source and/or drain of the transistor is defined by at least two local interconnects 300 arranged on opposite sides of the active gate 303 on the diffusion layer 102.
  • isolation gates 103 may be arranged and configured to electrically isolate a first region l02a of the diffusion layer 102 in the cell 200 from a second region l02b of the diffusion layer 102 in a neighboring standard cell 200 or from a third region l02c of the diffusion layer 102 in another neighboring standard cell 200, i.e. to provide electrical isolation between adjacent cells.
  • isolation gates 103 may be arranged and configured to electrically isolate a first diffusion layer region associated with a transistor from a second diffusion layer region associated with a neighboring transistor in the same cell 200.
  • FIG. 4 shows details of gate-vias 104 in an integrated circuit 100 according to an embodiment of the invention, particularly of the integrated circuit 100 shown in FIG. 2.
  • FIG. 4 shows particularly a cross-section across the cut-line indicated in FIG. 2.
  • the gate-vias 104 are formed in/through the power rail 101 and connect to the top of the isolation gate 103. It is, however, also possible to directly connect the gate vias 104 to an underside of the power rail 101 and to the top of the isolation gate 103. Further, it is also possible that a power rail 101 and a gate via 104 are formed integrally.
  • the particular shape of the gate-vias 104 may show a step 201.
  • the step 201 defines a narrower lower portion of a gate-via 104 and a broader upper portion of the gate- 104.
  • the gate-via 104 may be connected with the narrower lower portion, particularly a bottom thereof, to the top of an isolation gate 103.
  • the broader upper portion of the gate-via 104 may go into/through the power rail 101, and may thus connect the isolation gate 103 to the power rail 101.
  • the broader upper portion may also connect to the underside of the power rail 101 (as exemplarily illustrated in FIG. 5).
  • FIG. 5 also shows gate-vias 104 in an integrated circuit 100 according to an embodiment of the invention.
  • FIG. 5 illustrates how the specific gate-via shapes can guarantee a certain minimum spacing to a nearby interconnect 300 (e.g. used for a drain contact) even in the presence of via misalignment or other edge placement error, whereby without the spacing the misalignment would result in unwanted electrical short between the interconnect 300 and the power rail 101, or at least in a reliability concern such as time- dependent dielectric breakdown (TDDB), due to an extremely small spacing.
  • TDDB time- dependent dielectric breakdown
  • the underside of the broader upper portion of the gate-via 104 which is defined by the step 201, may be arranged at a higher level of the integrated circuit 100 than the top of the local interconnect 300 (in the vertical direction).
  • the shape of the gate-via 104 may provide a determined minimum spacing to the local interconnect 300 regardless of the position of the gate-via 104 on top of the isolation gate 103.
  • FIG. 6, 7 and 8 show further ways to avoid shorts in the integrated circuit 100, in particular shorts between the isolation gate 103 and the local interconnect 300 that could be created, because the isolation gate 103 is contacted by the gate-via 104 and/or because the local interconnect 300 is contacted by a via 301.
  • FIG. 6 shows in (A) - (D), respectively, parts of an integrated circuit 100 according to an embodiment of the invention.
  • a diffusion layer 102, an isolation gate 103 and two local interconnects 300, one interconnect 300 on each side of the isolation gate 103, are illustrated.
  • a transistor can be formed.
  • the isolation gate 103 may be capped with a dielectric 600. Depending on the manufacturing process of the integrated circuit 100, this dielectric 600 is able to avoid shorts. In particular, as shown in (C) and (D), when the via 301 is created, the dielectric 600 may be resistant to the manufacturing process of the via 301, e.g. an etching step thereof. Thus, even if the via 301 is misaligned on the local interconnect 300 (shown in (D), whereas the via 301 is aligned in (C)), it does not connect to the isolation gate 103. However, when the gate- via 104 is created, the dielectric 600 is not resistant to the manufacturing process of the gate-via 104, e.g. an etching step thereof. FIG.
  • top of the local interconnect 300 may thus be arranged at a lower level of the integrated circuit 100 than the top of the isolation gate 103. In this way, even if the gate-via 104 is misaligned on the top of the isolation gate 103 (shown in (B), whereas the gate-via 104 is aligned in (A)), it does not connect to the local interconnect 300.
  • FIG. 7 shows in (A) - (D), respectively, parts of an integrated circuit 100 according to an embodiment of the invention.
  • a diffusion layer 102, an isolation gate 103 and two local interconnects 300, one interconnect 300 on each side of the isolation gate 103, are illustrated.
  • a transistor can be formed.
  • the local interconnect 300 may be capped with a first dielectric 700, and the isolation gate may 103 may be capped with a second different dielectric 701.
  • a third dielectric 702 could be provided between the isolation gate 103 and the local interconnect s) 300.
  • the second dielectric 701 and third dielectric 703 may also be a single common dielectric.
  • the dielectrics 700, 701 and 702 are again able to avoid shorts.
  • the dielectric 701 provided on top of the isolation gate 103 may be resistant to the manufacturing process of the via 301, e.g. an etching step thereof.
  • the via 301 is misaligned on the local interconnect 300 (shown in (D), whereas the via 301 is aligned in (C)), it does not connect to the isolation gate 103.
  • the dielectric 700 provided on top of the local interconnect(s) 300 may be resistant to the manufacturing process of the gate-via 104, e.g. an etching step thereof.
  • FIG. 8 shows parts of an integrated circuit 100 according to an embodiment of the invention.
  • a diffusion layer 102, an isolation gate 103 and two local interconnects 300, one interconnect 300 on each side of the isolation gate 103, are illustrated. By means of these parts, a transistor can be formed.
  • FIG. 8 shows particularly that the width of the gate- via 104 may be smaller than the width of the isolation gate 103.
  • the width of the gate- via 104 is preferably arranged within the width of the isolation gate 103. This is a simple way to avoid that the isolation gate 103 and a local interconnect 300 are shorted, even if the gate-via 104 is misaligned. A minimum spacing between the isolation gate 103 and local interconnect(s) 300 may be controlled during the relevant manufacturing step of the integrated circuit 100.
  • a method of manufacturing the integrated circuit 100 may comprise forming a diffusion layer 102, e.g. in or on a substrate, forming and isolation gate 103 on the diffusion layer 102, e.g. in a layer above the diffusion layer 102, forming a power rail 101, e.g. in a layer above the isolation gate 103, and finally connecting the power rail 101 and the isolation gate vertically, e.g. from layer to layer, by a gate-via 104.
  • the gate-via may be formed by etching through the power rail 101 to the isolation gate 103 below, and filling the trench with via material, e.g. a metal.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

La présente invention concerne un circuit intégré, en particulier un circuit intégré CMOS, qui comprend au moins une couche de diffusion. La couche de diffusion peut notamment être une couche de diffusion continue. La présente invention concerne en conséquence un circuit intégré comprenant : au moins un rail d'alimentation, l'au moins une couche de diffusion, au moins une grille d'isolation disposée sur la couche de diffusion et configurée pour isoler électriquement une première région de la couche de diffusion à partir d'une seconde région de la couche de diffusion, et au moins un trou d'interconnexion de grille reliant verticalement la grille d'isolation au rail d'alimentation.
PCT/EP2018/080402 2018-11-07 2018-11-07 Circuit intégré et cellule standard associée WO2020094220A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/EP2018/080402 WO2020094220A1 (fr) 2018-11-07 2018-11-07 Circuit intégré et cellule standard associée
CN201880099162.1A CN112970110B (zh) 2018-11-07 2018-11-07 集成电路及其标准单元
EP18799753.1A EP3867951A1 (fr) 2018-11-07 2018-11-07 Circuit intégré et cellule standard associée

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2018/080402 WO2020094220A1 (fr) 2018-11-07 2018-11-07 Circuit intégré et cellule standard associée

Publications (1)

Publication Number Publication Date
WO2020094220A1 true WO2020094220A1 (fr) 2020-05-14

Family

ID=64184095

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2018/080402 WO2020094220A1 (fr) 2018-11-07 2018-11-07 Circuit intégré et cellule standard associée

Country Status (3)

Country Link
EP (1) EP3867951A1 (fr)
CN (1) CN112970110B (fr)
WO (1) WO2020094220A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021254910A1 (fr) 2020-06-16 2021-12-23 Saint-Gobain Glass France Vitre composite

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040213029A1 (en) * 2003-04-23 2004-10-28 Matsushita Electric Industrial Co., Ltd. Semiconductor memory and semiconductor integrated circuit
US20080283871A1 (en) * 2007-05-15 2008-11-20 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
US20100059825A1 (en) * 2008-09-10 2010-03-11 Gregory Munson Yeric Integrated circuit and a method of making an integrated circuit to provide a gate contact over a diffusion region
US20160336183A1 (en) * 2015-05-14 2016-11-17 Globalfoundries Inc. Methods, apparatus and system for fabricating finfet devices using continuous active area design
US20180012887A1 (en) * 2016-07-06 2018-01-11 Globalfoundries Inc. Method and apparatus for placing a gate contact inside an active region of a semiconductor
US20180102364A1 (en) * 2016-10-06 2018-04-12 Samsung Electronics Co., Ltd. Integrated circuit devices and method of manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5531848B2 (ja) * 2010-08-06 2014-06-25 富士通セミコンダクター株式会社 半導体装置、半導体集積回路装置、ＳＲＡＭ、Ｄｔ−ＭＯＳトランジスタの製造方法
US9024418B2 (en) * 2013-03-14 2015-05-05 Qualcomm Incorporated Local interconnect structures for high density
US9824970B1 (en) * 2016-06-27 2017-11-21 Globalfoundries Inc. Methods that use at least a dual damascene process and, optionally, a single damascene process to form interconnects with hybrid metallization and the resulting structures

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040213029A1 (en) * 2003-04-23 2004-10-28 Matsushita Electric Industrial Co., Ltd. Semiconductor memory and semiconductor integrated circuit
US20080283871A1 (en) * 2007-05-15 2008-11-20 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
US20100059825A1 (en) * 2008-09-10 2010-03-11 Gregory Munson Yeric Integrated circuit and a method of making an integrated circuit to provide a gate contact over a diffusion region
US20160336183A1 (en) * 2015-05-14 2016-11-17 Globalfoundries Inc. Methods, apparatus and system for fabricating finfet devices using continuous active area design
US20180012887A1 (en) * 2016-07-06 2018-01-11 Globalfoundries Inc. Method and apparatus for placing a gate contact inside an active region of a semiconductor
US20180102364A1 (en) * 2016-10-06 2018-04-12 Samsung Electronics Co., Ltd. Integrated circuit devices and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021254910A1 (fr) 2020-06-16 2021-12-23 Saint-Gobain Glass France Vitre composite
DE202021004150U1 (de) 2020-06-16 2022-10-24 Saint-Gobain Glass France Verbundscheibe

Also Published As

Publication number Publication date
CN112970110B (zh) 2023-06-02
CN112970110A (zh) 2021-06-15
EP3867951A1 (fr) 2021-08-25

Similar Documents

Publication Publication Date Title
CN105428349B (zh) 集成电路结构
US7723800B2 (en) Deep trench isolation for power semiconductors
JP4906281B2 (ja) 半導体装置
US8629513B2 (en) HV interconnection solution using floating conductors
KR102238303B1 (ko) 고전압 접합 종단(hvjt) 디바이스와 고전압 금속 산화물 반도체(hvmos) 디바이스의 집적
US20100314710A1 (en) High-voltage semiconductor device
US20080180132A1 (en) Semiconductor device and method of fabricating the same
CN111684592B (zh) 用于栅极绑定关断的新颖标准单元架构
US9293606B2 (en) Semiconductor device with seal ring with embedded decoupling capacitor
US12002738B2 (en) Stacked integrated circuit devices
US9941200B1 (en) Contact trench between stacked semiconductor substrates
US20130095650A1 (en) System And Method For Constructing Waffle Transistors
TWI540699B (zh) 半導體設備之先進法拉第屏蔽
US6744112B2 (en) Multiple chip guard rings for integrated circuit and chip guard ring interconnect
CN110120414B (zh) 晶体管结构
WO2020094220A1 (fr) Circuit intégré et cellule standard associée
US20170250197A1 (en) Layout structure for semiconductor integrated circuit
KR100448915B1 (ko) 고전압 출력회로의 풀업 트랜지스터 어레이
US8816403B2 (en) Efficient semiconductor device cell layout utilizing underlying local connective features
JP4039998B2 (ja) 半導体装置及び半導体集積回路装置
CN114361258A (zh) 半导体器件及其形成方法
US9660072B2 (en) Laterally diffused metal oxide semiconductor and field drift metal oxide semiconductor
JP2010183015A (ja) 半導体装置
US20130056803A1 (en) Semiconductor device
JP2007109873A (ja) 半導体装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18799753

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2018799753

Country of ref document: EP

Effective date: 20210520