Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/69—Inorganic materials
  • H10P14/694—Inorganic materials composed of nitrides
  • H10P14/6943—Inorganic materials composed of nitrides containing silicon
  • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
  • C23C16/34—Nitrides
  • C23C16/345—Silicon nitride
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
  • C23C16/45525—Atomic layer deposition [ALD]
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
  • C23C16/45525—Atomic layer deposition [ALD]
  • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
  • C23C16/45536—Use of plasma, radiation or electromagnetic fields
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
  • C23C16/45525—Atomic layer deposition [ALD]
  • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
  • C23C16/45536—Use of plasma, radiation or electromagnetic fields
  • C23C16/45542—Plasma being used non-continuously during the ALD reactions
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
  • H01J37/32082—Radio frequency generated discharge
  • H01J37/32174—Circuits specially adapted for controlling the RF discharge
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/3244—Gas supply means
  • H01J37/32449—Gas control, e.g. control of the gas flow
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D64/00—Electrodes of devices having potential barriers
  • H10D64/01—Manufacture or treatment
  • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
  • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
  • H10D64/01332—Making the insulator
  • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
  • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
  • H10P14/6326—Deposition processes
  • H10P14/6328—Deposition from the gas or vapour phase
  • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
  • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
  • H10P14/6326—Deposition processes
  • H10P14/6328—Deposition from the gas or vapour phase
  • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
  • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
  • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
  • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
  • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
  • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
  • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0402—Apparatus for fluid treatment
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0431—Apparatus for thermal treatment
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
  • H10P95/90—Thermal treatments, e.g. annealing or sintering

Definitions

• the disclosure relates to methods of depositing silicon nitride films. More specifically the disclosure relates to depositing silicon nitride films using atomic layer deposition.
• a method for depositing a silicon nitride layer on a stack comprises providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas, providing an N 2 plasma conversion, and providing an H 2 plasma conversion.
• an apparatus for depositing a silicon nitride atomic layer deposition on a stack is provided.
• a process chamber is provided.
• a substrate support is within the process chamber.
• a gas inlet provides a gas into the process chamber.
• a gas source provides the gas to the gas inlet, where the gas source comprises a silicon containing precursor source, an N 2 gas source, and an H 2 gas source.
• An exhaust pump is provided for pumping gas from the process chamber.
• An electrode provides RF power in the process chamber. At least one power source provides power to the electrode.
• a controller is controllably connected to the gas source and the at least one power source. The controller comprises at least one processor and computer readable media.
• the computer readable media comprises computer code for depositing by atomic layer deposition a silicon nitride layer on a stack by providing a plurality of cycles, wherein each of the cycles of the plurality of cycles, comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas from the silicon containing precursor source, providing an N 2 plasma conversion and providing an H 2 plasma conversion.
• FIG. 1 is a high level flow chart of an embodiment.
• FIGS. 2A-B are schematic cross-sectional views of a stack processed according to an embodiment.
• FIG. 3 is a schematic view of a process chamber that may be used in an embodiment.
• FIG. 4 is a schematic view of a computer system that may be used in practicing an embodiment.
• N 2 nitrogen
• NH 3 ammonia
• N 2 plasma leads to low WER, while N3 ⁇ 4 plasma leads to high growth rates and conformality.
• N3 ⁇ 4 results in undesired side effects.
• the high reactivity of NH 3 can lead to upstream particle generation and metals corrosion when the NH 3 reacts with residual halide-based silicon precursors. These reactions lead to excessive particle generation and the liberation of volatile halide-based acid byproducts that can attack metal chamber components.
• Removing NH 3 from the conversion plasma results in low growth rates ( ⁇ 0.3 A/cycle) and requires long radio frequency (RF)-on times to get a fully conformal film (> 8 seconds (s)). Both of these effects lead to very low throughput (tpt) that makes the film commercially unattractive.
• RF radio frequency
• the problems associated with NH 3 are high particle generation and high chamber corrosion rates.
• NH 3 -plasma is known to promote high elemental loss when deposited on top of sensitive chalcogenide materials.
• NH 3 plasmas in general, promote the incorporation of large amounts of -NH X moieties that lead to high WERs in dilute hydrofluoric acids (dHF).
• FIG. 1 is a high level flow chart of an embodiment.
• a stack is provided (step 104).
• FIG. 2A is a schematic cross-sectional view of a stack 200 in an embodiment.
• the stack 200 may comprise a substrate 204 with structures 208 formed over the substrate 204.
• the stack 200 forms a phase-change random access memory (PRAM).
• PRAM phase-change random access memory
• a SiN layer is deposited over the stack 200 by a SiN ALD process (step 108).
• the SiN ALD process is a SiN PEALD process.
• the SiN layer is used to encapsulate the PRAM.
• the ALD process comprises a plurality of cycles. Each cycle has a step of dosing the stack with a silicon containing precursor gas (step 112).
• the dosing of the stack comprises heating the stack to a temperature of about 400° C.
• the silicon containing precursor case is a diiodosilane (fLSiL) vapor. For between about 0.5 to 1.5 seconds, the dosing is completed and the flow of the silicon containing precursor gas is stopped.
• the dosing of the stack is a plasmaless or plasma free process.
• a plasma-free dose enables a more conformal, saturated half-reaction than a process that uses a plasma by ensuring that the adsorption of the Si-containing species is self-limiting.
• a first purge is provided (step 116) to purge the silicon containing precursor gas.
• the first purge comprises flowing a first purge gas.
• the first purge gas is N 2 .
• the first purge is a plasmaless or plasma free process. The process is plasma free to prevent forming a silicon containing plasma. After about 0.25 seconds, the first purge (step 116) is stopped.
• an N 2 plasma conversion is provided (step 120).
• the flow of N 2 during the first purge (step 116) continues, however, the N 2 plasma conversion provides a plasma.
• sufficient RF power is provided to transform N 2 gas into an N 2 plasma. No bias is applied.
• the stack is exposed to the N 2 plasma to provide the silicon nitride conversion. By using a hydrogen-free conversion, the film has very few NH X bonds, which results in a low WER in dilute HF acid.
• the N 2 plasma conversion is provided for between 3 to 5 seconds. After the N 2 plasma conversion (step 120) is completed the flow of N 2 is stopped.
• an optional second purge may be provided (step 124).
• a second purge gas of Ar may be provided.
• the RF power is continued in order to maintain a plasma.
• a hydrogen (H 2 ) plasma conversion is provided (step 128).
• an H 2 gas is flowed.
• the H 2 gas is transformed into an H 2 plasma.
• the RF power provided during the H 2 plasma conversion (step 128) is higher than the RF power provided during the N 2 plasma conversion (step 120). No bias is applied.
• the stack is exposed to the H 2 plasma to hydrogenate the surface and make it more reactive to an incoming halide molecule.
• the H 2 plasma conversion is provided for between 1 to 2 seconds. After the H 2 plasma conversion (step 128) is completed the flow of H 2 is stopped.
• a third purge is provided (step 132).
• a third purge gas of N 2 is provided.
• the RF power is stopped to extinguish the plasma.
• the third purge is provided for between about 0.25 to 0.75 seconds.
• the flow of the third purge gas is stopped and the cycle is completed. The cycle again goes back to the Si dosing (step 112) and the process is performed for a plurality of cycles.
• FIG. 2B is a schematic cross-sectional view of the stack 200 after a SiN layer 212 has been conformally deposited on the stack through the SiN ALD process (step 108).
• the PEALD process provides a highly conformal SiN layer 212.
• the resulting SiN layer 212 may be formed with a high throughput.
• Various embodiments eliminate N3 ⁇ 4 from the process and still have a conformal ALD SiN film with the same high growth rate as with an NFL plasma, the same low WER as with an N 2 plasma, low particles, and no upstream metal corrosion. This is done by inserting an H 2 plasma step after the initial N 2 plasma step. Note that this is not simply a mixture of N 2 and H 2 in the plasma, but a discrete H 2 plasma step with its own optimized flow, pressure, and power, done in such a way that very high throughputs can be obtained with the aforementioned high growth rates and low WERs.
• Various embodiments provide an NEL-free process that meets the low WER ( ⁇ 4 angstroms per minute (A/min) in 200:1 diluted hydrofluoric acid (dHF)) and high growth rate (> 0.7 A/cycle) requirements by inserting a second H 2 plasma conversion step after the initial N 2 plasma conversion step.
• H 2 has the advantage of not being as thermally reactive with halide precursors as NFL. This means there is no upstream particle generation in the gas distribution plenum (GDP).
• GDP gas distribution plenum
• the H 2 plasma conversion adds enough reactive ligands to the growing SiN film surface to promote the next cycle of silicon precursor adsorption without incorporating excessive -NHx bonds that lead to high wet etch rates.
• this embodiment can still achieve high conformality and high growth rates with a much less reactive nitrogen source than NH 3 .
• the in-film particle adders have been reduced by 2-3 orders of magnitude.
• Various embodiments enable the optimization of sequential N 2 and H 2 plasma steps that result in best in class film properties and productivity.
• the elimination of NH 3 can also lead to large cost reductions in tool costs since the expectation is that less aggressive metals reduction strategies can be employed, and the need for expensive dual-plenum designs to separate NH 3 from the residual silicon precursor is eliminated.
• the second purge may be eliminated.
• the N 2 gas is flowed first.
• the H 2 gas is flowed after the start of the flow of the N 2 gas and while the N 2 gas continues to flow so that the H 2 gas and N 2 gas flow together for some of the time.
• the flow of the N 2 gas is stopped before the flow of the H 2 begins.
• the elimination of the second purge reduces processing time and increases throughput.
• the silicon containing precursor is at least one of a silicon halide.
• silicon iodides such as diiodosilane (H 2 SiI 2 ), triiodosilane t H S i I 3 J , iodosilane t H 3 S i I J , or tetraiodosilane (Sil 4 ,), would provide a preferred silicon containing precursor.
• the silicon halide may be silicon chlorides or silicon bromides.
• the silicon halide may also have one or more hydrogen atoms attached to the at least one silicon atom.
• the silicon halide may at least one halogen attached to at least one silicon atom and at least one of an atom of another element attached to the at least one silicon atom.
• These other silicon containing precursors could be amino-, amido- or alkyl-based subgroups that can act as either leaving groups, cross-linking promoters or dopants.
• the substrate is heated to a temperature of at least 150° C during the dosing (step 112). More specifically, the substrate is heated to a temperature of between 200° C to 400° C. The heating provides activation energy to the silicon containing precursor to cause the silicon containing precursor to form a saturated conformal monolayer.
• FIG. 3 is a schematic view of a process chamber that may be used in an embodiment.
• a process chamber 300 comprises a gas distribution plate 306 providing a gas inlet and a substrate support 308, within a chamber 349, enclosed by a chamber wall 352.
• a stack 200 is positioned over the substrate support 308.
• An edge ring 309 surrounds the substrate support 308.
• a gas source 310 is connected to the chamber 349 through the gas distribution plate 306.
• the gas source 310 comprises a silicon containing precursor source 311, an N 2 gas source 312, and an H 2 gas source 316.
• a support temperature controller 350 is connected to a heater 351 for heating the substrate support 308.
• a radio frequency (RF) source 330 provides RF power to an upper electrode.
• the upper electrode is the gas distribution plate 306.
• 400 kilohertz (kHz), 13.56 megahertz (MHz), and optionally 2 MHz, 27 MHz power sources make up the RF source 330.
• the substrate support 308 is grounded.
• one generator is provided for each frequency.
• the generators may be in separate RF sources, or separate RF generators may be connected to different electrodes.
• the upper electrode may have inner and outer electrodes connected to different RF sources. Other arrangements of RF sources and electrodes may be used in other embodiments.
• a controller 335 is controllably connected to the RF source 330, an exhaust pump 320, and the gas source 310.
• An example of such a chamber is the StrikerTM system manufactured by Lam Research Corporation of Fremont, CA.
• FIG. 4 is a high level block diagram showing a computer system 400 suitable for implementing a controller 335 used in embodiments.
• the computer system may have many physical forms ranging from an integrated circuit, a printed circuit board, and a small handheld device up to a huge supercomputer.
• the computer system 400 includes one or more processors 402, and further can include an electronic display device 404 (for displaying graphics, text, and other data), a main memory 406 (e.g., random access memory (RAM)), storage device 408 (e.g., hard disk drive), removable storage device 410 (e.g., optical disk drive), user interface devices 412 (e.g., keyboards, touch screens, keypads, mice or other pointing devices, etc.), and a communications interface 414 (e.g., wireless network interface).
• main memory 406 e.g., random access memory (RAM)
• storage device 408 e.g., hard disk drive
• removable storage device 410 e.g., optical disk drive
• user interface devices 412 e.g., keyboards, touch screens, keypads, mice or other pointing devices, etc.
• a communications interface 414 e.g., wireless network interface
• the communications interface 414 allows software and data to be transferred between the computer system 400 and external devices via a link.
• the system may also include a communications infrastructure 416 (e.g., a communications bus, cross-over bar, or network) connected to the aforementioned devices/modules.
• a communications infrastructure 416 e.g., a communications bus, cross-over bar, or network
• Information transferred via communications interface 414 may be in the form of signals such as electronic, electromagnetic, optical, or other signals capable of being received by communications interface 414, via a communication link that carries signals and may be implemented using wire or cable, fiber optics, a phone line, a cellular phone link, a radio frequency link, and/or other communication channels.
• a communications interface it is contemplated that the one or more processors 402 might receive information from a network, or might output information to the network in the course of performing the above-described method steps.
• method embodiments may execute solely upon the processors or may execute over a network such as the Internet, in conjunction with remote processors that shares a portion of the processing.
• non-transient computer readable medium is used generally to refer to media such as main memory, secondary memory, removable storage, and storage devices, such as hard disks, flash memory, disk drive memory, CD-ROM, and other forms of persistent memory and shall not be construed to cover transitory subject matter, such as carrier waves or signals.
• Examples of computer code include machine code, such as produced by a compiler, and files containing higher- level code that are executed by a computer using an interpreter.
• Computer readable media may also be computer code transmitted by a computer data signal embodied in a carrier wave and representing a sequence of instructions that are executable by a processor.

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• 2019
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