JPWO2020081397A5 - - Google Patents
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- Publication number
- JPWO2020081397A5 JPWO2020081397A5 JP2021521294A JP2021521294A JPWO2020081397A5 JP WO2020081397 A5 JPWO2020081397 A5 JP WO2020081397A5 JP 2021521294 A JP2021521294 A JP 2021521294A JP 2021521294 A JP2021521294 A JP 2021521294A JP WO2020081397 A5 JPWO2020081397 A5 JP WO2020081397A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- silicon
- plasma
- stack
- containing precursor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims description 103
- 229910052710 silicon Inorganic materials 0.000 claims description 58
- 239000010703 silicon Substances 0.000 claims description 54
- 238000006243 chemical reaction Methods 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 52
- 239000002243 precursor Substances 0.000 claims description 49
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 35
- 238000010926 purge Methods 0.000 claims description 28
- -1 silicon halide Chemical class 0.000 claims description 23
- 238000000231 atomic layer deposition Methods 0.000 claims description 22
- 238000012545 processing Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 15
- 239000012686 silicon precursor Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 4
- CFTHARXEQHJSEH-UHFFFAOYSA-N silicon tetraiodide Chemical group I[Si](I)(I)I CFTHARXEQHJSEH-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 claims description 3
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical group Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 2
- 150000003376 silicon Chemical class 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 65
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 18
- 230000008569 process Effects 0.000 description 18
- 239000010410 layer Substances 0.000 description 10
- 238000004891 communication Methods 0.000 description 9
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 8
- 150000004820 halides Chemical class 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- AIHCVGFMFDEUMO-UHFFFAOYSA-N diiodosilane Chemical group I[SiH2]I AIHCVGFMFDEUMO-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- IDIOJRGTRFRIJL-UHFFFAOYSA-N iodosilane Chemical compound I[SiH3] IDIOJRGTRFRIJL-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- DNAPJAGHXMPFLD-UHFFFAOYSA-N triiodosilane Chemical compound I[SiH](I)I DNAPJAGHXMPFLD-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862748085P | 2018-10-19 | 2018-10-19 | |
| US62/748,085 | 2018-10-19 | ||
| PCT/US2019/055920 WO2020081397A1 (en) | 2018-10-19 | 2019-10-11 | Method of depositing silicon nitride films |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2022505321A JP2022505321A (ja) | 2022-01-14 |
| JP2022505321A5 JP2022505321A5 (https=) | 2024-01-25 |
| JPWO2020081397A5 true JPWO2020081397A5 (https=) | 2024-01-25 |
| JP7488815B2 JP7488815B2 (ja) | 2024-05-22 |
Family
ID=70284713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021521294A Active JP7488815B2 (ja) | 2018-10-19 | 2019-10-11 | 窒化ケイ素膜を堆積させる方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12230495B2 (https=) |
| JP (1) | JP7488815B2 (https=) |
| KR (1) | KR102751446B1 (https=) |
| CN (1) | CN112930581B (https=) |
| TW (1) | TWI857979B (https=) |
| WO (1) | WO2020081397A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20250009119A (ko) * | 2023-07-10 | 2025-01-17 | 한화정밀기계 주식회사 | 기판 처리 장치 및 방법 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4669679B2 (ja) * | 2004-07-29 | 2011-04-13 | 東京エレクトロン株式会社 | 窒化珪素膜の製造方法及び半導体装置の製造方法 |
| JP4607637B2 (ja) * | 2005-03-28 | 2011-01-05 | 東京エレクトロン株式会社 | シリコン窒化膜の形成方法、シリコン窒化膜の形成装置及びプログラム |
| US8728955B2 (en) * | 2012-02-14 | 2014-05-20 | Novellus Systems, Inc. | Method of plasma activated deposition of a conformal film on a substrate surface |
| US9343317B2 (en) * | 2013-07-01 | 2016-05-17 | Micron Technology, Inc. | Methods of forming silicon-containing dielectric materials and semiconductor device structures |
| US9576792B2 (en) * | 2014-09-17 | 2017-02-21 | Asm Ip Holding B.V. | Deposition of SiN |
| US9589790B2 (en) | 2014-11-24 | 2017-03-07 | Lam Research Corporation | Method of depositing ammonia free and chlorine free conformal silicon nitride film |
| US10410857B2 (en) * | 2015-08-24 | 2019-09-10 | Asm Ip Holding B.V. | Formation of SiN thin films |
| KR102146542B1 (ko) | 2015-09-30 | 2020-08-20 | 주식회사 원익아이피에스 | 질화막의 제조방법 |
| CN110178201B (zh) * | 2017-01-13 | 2023-06-16 | 应用材料公司 | 用于低温氮化硅膜的方法及设备 |
| US10043656B1 (en) * | 2017-03-10 | 2018-08-07 | Lam Research Corporation | Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxide |
| US9984869B1 (en) * | 2017-04-17 | 2018-05-29 | Asm Ip Holding B.V. | Method of plasma-assisted cyclic deposition using ramp-down flow of reactant gas |
-
2019
- 2019-10-11 WO PCT/US2019/055920 patent/WO2020081397A1/en not_active Ceased
- 2019-10-11 JP JP2021521294A patent/JP7488815B2/ja active Active
- 2019-10-11 CN CN201980068903.4A patent/CN112930581B/zh active Active
- 2019-10-11 US US17/285,814 patent/US12230495B2/en active Active
- 2019-10-11 KR KR1020217014922A patent/KR102751446B1/ko active Active
- 2019-10-16 TW TW108137225A patent/TWI857979B/zh active
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