JP2022505321A5 - - Google Patents
Info
- Publication number
- JP2022505321A5 JP2022505321A5 JP2021521294A JP2021521294A JP2022505321A5 JP 2022505321 A5 JP2022505321 A5 JP 2022505321A5 JP 2021521294 A JP2021521294 A JP 2021521294A JP 2021521294 A JP2021521294 A JP 2021521294A JP 2022505321 A5 JP2022505321 A5 JP 2022505321A5
- Authority
- JP
- Japan
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862748085P | 2018-10-19 | 2018-10-19 | |
| US62/748,085 | 2018-10-19 | ||
| PCT/US2019/055920 WO2020081397A1 (en) | 2018-10-19 | 2019-10-11 | Method of depositing silicon nitride films |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2022505321A JP2022505321A (ja) | 2022-01-14 |
| JP2022505321A5 true JP2022505321A5 (https=) | 2024-01-25 |
| JPWO2020081397A5 JPWO2020081397A5 (https=) | 2024-01-25 |
| JP7488815B2 JP7488815B2 (ja) | 2024-05-22 |
Family
ID=70284713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021521294A Active JP7488815B2 (ja) | 2018-10-19 | 2019-10-11 | 窒化ケイ素膜を堆積させる方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12230495B2 (https=) |
| JP (1) | JP7488815B2 (https=) |
| KR (1) | KR102751446B1 (https=) |
| CN (1) | CN112930581B (https=) |
| TW (1) | TWI857979B (https=) |
| WO (1) | WO2020081397A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20250009119A (ko) * | 2023-07-10 | 2025-01-17 | 한화정밀기계 주식회사 | 기판 처리 장치 및 방법 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4669679B2 (ja) * | 2004-07-29 | 2011-04-13 | 東京エレクトロン株式会社 | 窒化珪素膜の製造方法及び半導体装置の製造方法 |
| JP4607637B2 (ja) * | 2005-03-28 | 2011-01-05 | 東京エレクトロン株式会社 | シリコン窒化膜の形成方法、シリコン窒化膜の形成装置及びプログラム |
| US8728955B2 (en) * | 2012-02-14 | 2014-05-20 | Novellus Systems, Inc. | Method of plasma activated deposition of a conformal film on a substrate surface |
| US9343317B2 (en) * | 2013-07-01 | 2016-05-17 | Micron Technology, Inc. | Methods of forming silicon-containing dielectric materials and semiconductor device structures |
| US9576792B2 (en) * | 2014-09-17 | 2017-02-21 | Asm Ip Holding B.V. | Deposition of SiN |
| US9589790B2 (en) | 2014-11-24 | 2017-03-07 | Lam Research Corporation | Method of depositing ammonia free and chlorine free conformal silicon nitride film |
| US10410857B2 (en) * | 2015-08-24 | 2019-09-10 | Asm Ip Holding B.V. | Formation of SiN thin films |
| KR102146542B1 (ko) | 2015-09-30 | 2020-08-20 | 주식회사 원익아이피에스 | 질화막의 제조방법 |
| CN110178201B (zh) * | 2017-01-13 | 2023-06-16 | 应用材料公司 | 用于低温氮化硅膜的方法及设备 |
| US10043656B1 (en) * | 2017-03-10 | 2018-08-07 | Lam Research Corporation | Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxide |
| US9984869B1 (en) * | 2017-04-17 | 2018-05-29 | Asm Ip Holding B.V. | Method of plasma-assisted cyclic deposition using ramp-down flow of reactant gas |
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2019
- 2019-10-11 WO PCT/US2019/055920 patent/WO2020081397A1/en not_active Ceased
- 2019-10-11 JP JP2021521294A patent/JP7488815B2/ja active Active
- 2019-10-11 CN CN201980068903.4A patent/CN112930581B/zh active Active
- 2019-10-11 US US17/285,814 patent/US12230495B2/en active Active
- 2019-10-11 KR KR1020217014922A patent/KR102751446B1/ko active Active
- 2019-10-16 TW TW108137225A patent/TWI857979B/zh active