WO2020062525A1 - 面光源、其制备方法及采用该面光源的显示装置 - Google Patents

面光源、其制备方法及采用该面光源的显示装置 Download PDF

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Publication number
WO2020062525A1
WO2020062525A1 PCT/CN2018/117313 CN2018117313W WO2020062525A1 WO 2020062525 A1 WO2020062525 A1 WO 2020062525A1 CN 2018117313 W CN2018117313 W CN 2018117313W WO 2020062525 A1 WO2020062525 A1 WO 2020062525A1
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Prior art keywords
light source
temperature
layer
resistant film
surface light
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Ceased
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PCT/CN2018/117313
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English (en)
French (fr)
Inventor
杨勇
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US16/309,458 priority Critical patent/US20200105990A1/en
Publication of WO2020062525A1 publication Critical patent/WO2020062525A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means

Definitions

  • the invention relates to the fields of flexible display devices and the like, and in particular to a surface light source, a preparation method thereof, and a display device using the surface light source.
  • miniLED display device is a strong competitive product of OLED display devices (organic electroluminescent diode display devices) in the future market.
  • MiniLED display devices have many advantages such as bright, flexible and bendable, can produce high dynamic contrast display technology, narrow bezel display technology, and special-shaped display technology, and have become market research hotspots.
  • the current miniLED display devices still have some gaps compared with conventional product backlights and OLED display devices in terms of light output efficiency, light mixing uniformity, cost, and module thickness.
  • the miniLED display device uses a flexible circuit board (Flexible Printed Circuit (FPC for short) or Printed Circuit Board (PCB) as the substrate's direct-type backlight structure.
  • FPC Flexible Printed Circuit
  • PCB Printed Circuit Board
  • the surface of the surface light source substrate uses a high reflectivity white oil with a film layer, miniLED display device The internal back light is reflected into the diffusion layer and the brightness enhancement film layer.
  • the reflectivity of existing white oil inks is difficult to exceed 85%.
  • the organic materials of ink types have higher absorption values, which results in a greater loss of the internal light efficiency of surface light sources. The way to achieve the improvement of surface light source efficiency will create a technical bottleneck.
  • the technical problem to be solved by the present invention is to provide a surface light source, a preparation method thereof, and a display device using the surface light source, which use a specular reflective layer covered with a high-temperature-resistant film layer to replace the current white oil reflective layer on the market to effectively Improve the reflectivity and overall light efficiency of surface light sources.
  • the present invention provides a surface light source including a substrate; a wire layer having a plurality of wires distributed on one surface of the substrate; a specular reflection layer covering the wire layer; A high-temperature-resistant film layer is coated on the specular reflection layer; a plurality of LED chips are distributed on the high-temperature-resistant film layer and are correspondingly electrically connected to the wires; a fluorescent film is coated on the LED chip and the High temperature resistant film.
  • the heat-resistant temperature of the high-temperature-resistant film layer is 200 ° C. to 500 ° C., its transmittance is higher than 90%, and its thickness is 100 ⁇ m to 150 ⁇ m.
  • the material used for the high-temperature-resistant film layer is a polycarbonate copolymer, a polyaryletherketone derivative, a polyimide sulfone derivative, a polyimide derivative, and an aromatic polymer.
  • a polycarbonate copolymer a polycarbonate copolymer, a polyaryletherketone derivative, a polyimide
  • a thickness of the specular reflection layer is 1 ⁇ m to 5 ⁇ m; and a surface roughness of the specular reflection layer is 0.1 ⁇ m to 0.3 ⁇ m.
  • the surface light source is further etched with a plurality of through holes, and each of the through holes penetrates the entire high-temperature-resistant film layer and the specular reflection layer;
  • the position of the connected pad corresponds to the position of the through hole, and each of the LED chips has a corresponding pin, and the pin is fixed to the pad through the through hole.
  • the invention also provides a method for preparing a surface light source, comprising the steps of: providing a flexible substrate; attaching a plurality of wires on one surface of the flexible substrate to form a wire layer; and having a side of the flexible substrate with the wire, A specular reflection layer is formed by sputtering; a high temperature resistant film layer is glued on the specular reflection layer; a plurality of LED chips are arranged on the high temperature resistant film layer, and each of the LED chips is electrically connected to the wire layer correspondingly.
  • Conductive wire hot-press a fluorescent film on the high-temperature-resistant film layer and the LED chip to obtain a side light source.
  • the method before setting the LED chip on the high-temperature-resistant film layer, the method further includes the following steps: etching through holes through the entire high-temperature-resistant film layer and the specular reflection layer, so that The wire layer has a pad connected to the wire, and the position of the through hole corresponds to the pad; each of the LED chips has a corresponding pin, and the LED is provided on the high temperature resistant film layer.
  • the pin passes through the through hole and is fixed on the pad through a solder paste process, a die-bonding process, and a reflow soldering process.
  • the reflow process is a laser reflow process.
  • the hot-pressing temperature is: 130 ° C-150 ° C; the hot-pressing time is 10 min-15min; After the heat-resistant film layer and a fluorescent film are hot-pressed on the LED chip, a semi-finished product of the surface light source is obtained, and the semi-finished product of the surface light source is baked at a temperature of 130 ° C. to 150 ° C. for 2 min to 10 min to obtain a finished product of the surface light source.
  • the present invention also provides a display device including the above-mentioned surface light source.
  • the surface light source and the display device using the surface light source of the present invention use a specular reflective layer covered with a high-temperature-resistant film layer to replace the current white oil reflective layer on the market, and the reflectance of the specular reflective layer covered with a high-temperature-resistant film layer reaches 90% Above, the reflectance of the best white oil reflective layer on the market is 85%.
  • the specular reflective layer covered with a high temperature resistant film has a higher reflectance in the blue light band, and the light emission efficiency and excitation energy of blue light. It is also higher, which effectively improves the reflectivity and overall light efficiency of the surface light source.
  • the surface light source preparation method of the present invention adopts a laser reflow soldering process, which effectively avoids the problem of expansion and contraction of the substrate and each film layer.
  • a high-temperature-resistant film layer and a specular reflection layer with high-temperature resistance characteristics are added, the film is not subject to hot pressing.
  • the effect of the high temperature process makes the process simpler and more reasonable, which is beneficial to control, thereby further improving the overall quality of the area light source.
  • FIG. 1 is a layered structure diagram of a surface light source according to an embodiment of the present invention.
  • FIG. 2 is a wiring diagram of the wiring layer in FIG. 1, which mainly reflects the distribution of the wiring and the position of the pad.
  • FIG. 3 is a comparison graph of the reflectance of a specular reflective layer and a white oil reflective layer covered with a high-temperature-resistant film in an embodiment of the present invention.
  • FIG. 4 is a flowchart of steps in a method for preparing a surface light source according to an embodiment of the present invention.
  • FIG. 5 is a layered structure diagram of a display device according to an embodiment of the present invention.
  • the surface light source 100 of the present invention includes a substrate 101, a wire layer 102, a specular reflection layer 103, a high-temperature-resistant film layer 104, a plurality of LED chips 105, and a fluorescent film. 106.
  • the substrate 101 may be an FPC substrate or a PCB substrate.
  • the substrate 101 is a FPC flexible substrate.
  • the wire layer 102 has a plurality of wires 1020 (see FIG. 2).
  • the wires 1020 are distributed on the upper surface of the substrate 101 to form the wire layer 102.
  • the wires 1020 can be copper wires. Copper wires are attached to the upper surface of the flexible substrate 101 to form a basic structure of the surface light source 100.
  • the pin is divided into a P-pole and an N-pole. Therefore, the wire 1020 is also divided into a P-pole wire 10201 and Corresponding pads 1021 are provided on the N-pole lead 10202, the N-pole lead 10202, and the P-pole lead 10202.
  • the specular reflection layer 103 is covered on the wire layer 102.
  • the specular reflection layer 103 covers the basic structure of the surface light source 100, that is, the entire surface on which the copper wire is located.
  • the specular reflection layer 103 has a thickness of 1 ⁇ m to 5 ⁇ m, preferably 3 ⁇ m; the surface roughness of the specular reflection layer 103 is 0.1 ⁇ m to 0.3 ⁇ m, and its average surface roughness is generally 0.2 ⁇ m.
  • the surface roughness of the specular reflection layer 103 can increase the diffuse reflection of light to a certain extent, so that the light is evenly dispersed.
  • the high-temperature-resistant film layer 104 covers the specular reflection layer 103; a heat-insulating high-temperature-resistant film layer 104 is added above the specular reflection layer 103 to ensure the specular reflection when the fluorescent film 106 is subsequently hot-pressed The layer 103 is not damaged.
  • the material used for the high temperature resistant film layer 104 is a polycarbonate copolymer, a polyaryletherketone derivative, a polyimide sulfone derivative, a polyimide derivative, and an aromatic polyheterocyclic derivative. One of them.
  • the heat-resistant temperature of the high-temperature-resistant film layer 104 is 200 ° C. to 500 ° C., its transmittance is higher than 90%, and its thickness is 100 ⁇ m to 150 ⁇ m, preferably 120 ⁇ m to 130 ⁇ m.
  • FIG. 3 is a graph of the reflectance comparison between the mirror-reflective layer covered with the high-temperature-resistant film layer and the white oil reflective layer in this embodiment. From the frequency spectrum, the mirror surface covered with the high-temperature-resistant film layer 104 is shown The reflectivity of the reflective layer 103 is more than 90%, which is higher than the reflectance of the best white oil reflective layer currently on the market. Higher, the light emission efficiency and excitation energy of blue light are also higher, which is more conducive to improving light efficiency.
  • the LED chips 105 are distributed on the high-temperature-resistant film layer 104 and are correspondingly electrically connected to the wires 1020 (see FIG. 2); the LED chip 105 has a length and width range of 100 ⁇ m. -500 ⁇ m.
  • the surface light source 100 is also etched with a plurality of through holes 107, and each of the through holes 107 penetrates the entire high temperature resistant film layer 104 and the specular reflection layer 103, and the positions of the through holes 107 correspond to On the pad 1021.
  • the pin is fixed to the pad 1021 through the through hole 107.
  • the fluorescent film 106 is covered on the LED chips 105 and the high-temperature-resistant film layer 104.
  • the present invention further provides a method for preparing a surface light source 100, which specifically includes steps S01-S08.
  • FIG. 1 and FIG. 2 For the elements or structural symbols involved in the following description, please refer to FIG. 1 and FIG. 2 at the same time.
  • a substrate 101 is provided; the substrate 101 is an FPC substrate or a PCB substrate.
  • a plurality of wires 1020 are attached to the upper surface of the substrate 101 to form a wire layer 102.
  • the wires 1020 may be copper wires, and the copper wires are attached to the upper surface of the substrate 101 to form the surface light source 100.
  • Basic architecture Basic architecture.
  • a specular reflection layer 103 is formed on a surface of the substrate 101 having the conductive lines 1020; the specular reflective layer 103 covers the entire surface of the copper light source on the basic structure of the surface light source 100.
  • the specular reflection layer 103 has a thickness of 1 ⁇ m to 5 ⁇ m, preferably 3 ⁇ m; the surface roughness of the specular reflection layer 103 is 0.1 ⁇ m to 0.3 ⁇ m, and its average surface roughness is generally 0.2 ⁇ m.
  • a high-temperature-resistant film layer 104 is glued on the specular reflection layer 103; wherein, the high-temperature-resistant film layer 104 has a heat-resistant temperature of 200 ° C-500 ° C, its transmittance is higher than 90%, and its thickness is 100 ⁇ m. -150 ⁇ m, preferably 120 ⁇ m -130 ⁇ m.
  • the high temperature resistant film layer 104 and the specular reflection layer 103 are bonded by an adhesive layer to ensure that the high temperature resistant film layer 104 and the specular reflection layer 103 can be closely adhered.
  • S05 Etching a number of through-holes 107 through the entire high-temperature-resistant film layer 104 and the specular reflection layer 103. Since the wire layer 102 has a pad 1021 connected to the wire 1020, in actual situations, Each of the LED chips 105 has a corresponding pin, and the pin is divided into P-pole and N-pole, and the lead 1020 is also divided into P-pole and N-pole wires. The position of the pad 1021 of the through hole 107 corresponds to the pad 1021. After the through hole 107 is etched, the pad 1021 of the substrate can be exposed to facilitate subsequent operations.
  • a plurality of LED chips 105 are provided on the high-temperature-resistant film layer 104, and each of the LED chips 105 is correspondingly electrically connected to a corresponding wire in the wire layer 102.
  • the pins of the LED chip 105 pass through the corresponding through-holes 107 and are fixed on the pads 1021 by a solder paste process, a die-bonding process, and a reflow soldering process.
  • the solder paste brushing process the solder paste is applied to the position of the pad 1021, and then the LED chip 105 is fixed by a die-bonding process and a reflow soldering process.
  • the reflow process is a laser reflow process.
  • the laser reflow soldering process is used to solder each LED chip 105, which is different from the conventional hot air reflow soldering process.
  • the soldering area is large, and the laser reflow soldering is used.
  • the laser beam can be focused in the area of the pad 1021 by the optical system, and the local heating area of the pad 1021 can be formed in a short time, thereby avoiding the substrate brought by the conventional hot gas reflow soldering process. Or the impact of each film layer.
  • the hot-pressing temperature is: 130 ° C-150 ° C; the hot-pressing time is 10 min-15 minutes (that is, 10-15 minutes).
  • the hot-pressing temperature is 130 ° C-150 ° C, and the heat-resistant temperature of the high-temperature-resistant film layer 104 is 200 ° -500 ° C.
  • the hot-pressing temperature is much lower than the heat-resistant temperature of the high-temperature-resistant film layer 104, and can be effectively protected.
  • the specular reflection layer 103 is not affected by the hot pressing temperature.
  • S08 Put the semi-finished product of the surface light source 100 into an oven, and bake at a temperature of 130 ° C. to 150 ° C. for 2 min to 10 min to further cure the fluorescent film 106 to obtain a finished product of the surface light source 100.
  • the structure of the display device of the present invention will be described below using a miniLED display device as an example.
  • the miniLED display device of the present invention includes a backlight device 1, a first polarizer 2, a first glass substrate 3, a first electrode layer 4, a liquid crystal molecular layer 5, and a second electrode layer. 6.
  • the first polarizer 2 and the second polarizer 9 are opposite to each other and are located on the backlight device 1.
  • the first glass substrate 3 and the second glass substrate 8 are opposite to each other and are located on the first polarizer 2 and the second polarizer.
  • the first electrode layer 4 and the second electrode layer 6 are provided between the first glass substrate 3 and the second glass substrate 8, and the liquid crystal molecular layer 5 is provided between the first electrode layer 4 and the second electrode layer 6.
  • the color filter 7 is disposed between the second glass substrate 8 and the second electrode layer 6.
  • the light emitted by the backlight device 1 passes through the first polarizer 2, the first glass substrate 3, the liquid crystal molecules 5, the color filter 7, the second glass substrate 8, and the second polarizer 9 in order.
  • the backlight device 1 includes a surface light source 100 and at least one optical film 110 according to an embodiment of the present invention.
  • the optical film 110 is disposed on the surface light source 100, and is, for example, a diffusion sheet, a prism sheet, a light enhancement sheet, or a combination thereof.
  • the backlight device 1 of this embodiment can also be applied to other types of miniLED display devices.
  • the miniLED liquid crystal display device listed in this embodiment is only an explanation of the present invention, rather than an example of the present invention. kind of restrictions.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

一种面光源、其制备方法及采用该面光源的显示装置，面光源（100）包括一基板（101）；一导线层（102），具有若干根导线，分布于基板的一表面；一镜面反射层（103），覆于导线层上；一耐高温膜层（104），覆于镜面反射层上；若干LED芯片（105），分布于耐高温膜层上且对应的电连接至导线；一荧光膜（106），覆于LED芯片及耐高温膜层上。该面光源、其制备方法及采用该面光源的显示装置，有效提高了面光源的反射率和整体光效。

Description

面光源、其制备方法及采用该面光源的显示装置 技术领域
本发明涉及柔性显示装置等领域，具体涉及一种面光源、其制备方法及采用该面光源的显示装置。
 背景技术
随着科技的不断发展，人们与电子设备的接触越来越频繁，对显示装置（或称显示屏）的要求也不断的变高。miniLED显示装置作为未来市场OLED显示装置（有机电致发光二极管显示装置）的强有力竞争产品， MiniLED显示装置具有高亮、柔性可弯曲、可制作高动态对比度显示技术、窄边框显示技术、异形显示技术等诸多优点，已成为市场研究热点。
然而，目前miniLED显示装置在出光效率、混光均匀性、成本、模组厚度等方面与常规产品背光及OLED显示装置相比还有一些差距。就光效而言，miniLED显示装置采用柔性电路板（Flexible Printed Circuit 简称FPC）或印制电路板（ Printed Circuit Board，简称PCB）作为基板的直下式背光架构，背光架构中面光源的基板表面采用反射率较高的白油有膜层，将miniLED显示装置的内部回光反射进入扩散层和增亮膜层。而市面上，由于现有白油油墨反射率较难超过85%，同时，油墨类型的有机材料具有较高的吸收值，导致面光源内部回光光效损失较多，通过油墨反射率提升来达到提升面光源光效的方式会产生一个技术瓶颈。
 技术问题
本发明所要解决的技术问题是，提供一种面光源、其制备方法及采用该面光源的显示装置，其利用覆有耐高温膜层的镜面反射层替代目前市面上白油反射层，以有效提高面光源的反射率和整体光效。
 技术解决方案
为了解决上述技术问题，本发明提供一种面光源，包括一基板；一导线层，具有若干根导线，分布于所述基板的一表面；一镜面反射层，覆于所述导线层上；一耐高温膜层，覆于所述镜面反射层上；若干LED芯片，分布于所述耐高温膜层上且对应的电连接至所述导线；一荧光膜，覆于所述LED芯片及所述耐高温膜层上。
在本发明的一实施例中，所述耐高温膜层的耐热温度为200℃-500℃，其穿透率高于90%，其厚度为100μm-150μm。
在本发明的一的实施例中，所述耐高温膜层所用材料为聚碳酸酯共聚物、聚芳醚酮衍生物、聚酰亚胺砜衍生物、聚酰亚胺类衍生物、芳香聚杂环类衍生物中的一种。
在本发明的一实施例中，所述镜面反射层的厚度为1μm -5μm；所述镜面反射层的表面粗糙度为0.1μm-0.3μm。
在本发明的一实施例中，该面光源还蚀刻有若干通孔，每一所述通孔贯穿整个所述耐高温膜层和所述镜面反射层；所述导线层上具有与所述导线连接的焊盘，所述通孔的位置对应于所述焊盘，每一所述LED芯片具有相应的引脚，所述引脚穿过所述通孔固定至所述焊盘。
本发明还提供了一种面光源的制备方法，包括如下步骤：提供一柔性基板；在所述柔性基板的一表面附着若干导线，形成导线层；在所述柔性基板具有所述导线的一面，溅镀形成一镜面反射层；在所述镜面反射层上胶合一耐高温膜层；在所述耐高温膜层上设置若干LED芯片，每一所述LED芯片对应的电连接至所述导线层中的导线；在所述耐高温膜层和所述LED芯片上热压一荧光膜，得到一面光源。
在本发明的一实施例中，在所述耐高温膜层上设置所述LED芯片之前，还包括如下步骤：蚀刻出贯穿整个所述耐高温膜层和所述镜面反射层若干通孔，所述导线层上具有与所述导线连接的焊盘，该通孔的位置对应于所述焊盘；每一所述LED芯片具有相应的引脚，在所述耐高温膜层上设置所述LED芯片时，所述引脚穿过所述通孔并通过刷锡膏工艺、固晶工艺和回流焊工艺固定在所述焊盘上。
在本发明的一实施例中，所述回流焊工艺为激光回流焊工艺。
在本发明的一实施例中，在所述耐高温膜层和LED芯片上热压一荧光膜时，热压温度为：130℃-150℃；热压时间为10 min-15min；在所述耐高温膜层和所述LED芯片上热压一荧光膜后，得到面光源的半成品，将面光源的半成品在130℃-150℃的温度下烘烤2 min -10min，得到面光源的成品。
本发明还提供了一种显示装置，其包括所述的面光源。
 有益效果
本发明的面光源及采用该面光源的显示装置，其利用覆有耐高温膜层的镜面反射层替代目前市面上白油反射层，覆有耐高温膜层的镜面反射层反射率达到90%以上，高于目前市面上最好的白油反射层的反射率85%，覆有耐高温膜层的镜面反射层，其反射频谱在蓝光波段的反射率更高，蓝光的出光效率和激发能量也更高，更加有效提高了面光源的反射率和整体光效。本发明的面光源的制备方法，采用激光回流焊工艺，有效避免了基板和各膜层的涨缩问题，加入具有耐高温特性的耐高温膜层和镜面反射层，不受热压覆膜时高温制程的影响，工艺更加简单合理，利于控制，从而进一步提高了面光源的整体质量。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
下面结合附图和实施例对本发明作进一步解释。
图1是本发明一实施例的面光源层状结构图。
图2是图1中导线层的一种导线分布图，主要体现导线的分布以及焊盘的位置。
图3是本发明一实施例中覆有耐高温膜层的镜面反射层与白油反射层的反射率对比曲线图。
图4是本发明一实施例的面光源的制备方法的步骤流程图。
图5是本发明一实施例的显示装置的层状结构图。
附图标记：
1背光装置；
100面光源；                    110光学膜片；
101柔性基板；                  102导线层；
103镜面反射层；                104耐高温膜层；
105 LED芯片；                  106荧光膜；
107通孔；                      1020导线；
1021焊盘；                     10201 P极导线；
10202 N极导线；
2第一偏光片；                  3第一玻璃基板；
4第一电极层；                  5液晶分子层；
6第二电极层；                  7彩色滤光片；
8第二玻璃基板；                9第二偏光片。
 本发明的最佳实施方式
下面详细描述本发明的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。
以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
如图1所示，在其中一实施例中，本发明的面光源100包括一基板101、一导线层102、一镜面反射层103、一耐高温膜层104、若干LED芯片105、一荧光膜106。
所述基板101可以是FPC基板或PCB基板。在本实施例中，所述基板101为FPC柔性基板。
所述导线层102具有若干根导线1020（见图2）。所述导线1020分布于所述基板101的上表面从而形成所述导线层102，所述导线1020可采用铜质导线。铜质导线附着在所述柔性基板101的上表面形成面光源100的基本架构。
如图2所示，按照工艺设计要求，由于每一所述LED芯片105具有相应的引脚，该引脚分为P极和N极，因此，所述导线1020也分为P极导线10201和N极导线10202， N极导线10202和P极导线10202上设置相应的焊盘1021。
所述镜面反射层103覆于所述导线层102上；本实施例中，所述镜面反射层103覆盖所述面光源100的基本架构上，亦即覆盖所述铜质导线所在的整个面。所述镜面反射层103的厚度为1μm -5μm，优选为3μm；所述镜面反射层103的表面粗糙度为0.1μm-0.3μm，其平均表面粗糙度一般为0. 2μm。所述镜面反射层103的表面粗糙度能够在一定程度上增加光线的漫反射，使光线均匀分散。
所述耐高温膜层104覆于所述镜面反射层103上；在所述镜面反射层103上方加入隔热的所述耐高温膜层104，保证后续热压荧光膜106时，所述镜面反射层103不被破坏。根据设计性能需求，所述耐高温膜层104所用材料为聚碳酸酯共聚物、聚芳醚酮衍生物、聚酰亚胺砜衍生物、聚酰亚胺类衍生物、芳香聚杂环类衍生物中的一种。其中，所述耐高温膜层104的耐热温度为200℃-500℃，其穿透率高于90%，其厚度为100μm-150μm，优选为120μm -130μm。
如图3所示，图3为本实施例中的覆有耐高温膜层的镜面反射层与白油反射层的反射率对比曲线图，从频谱可以看出覆有耐高温膜层104的镜面反射层103反射率达到90%以上，高于目前市面上最好的白油反射层的反射率85%，覆有耐高温膜层104的镜面反射层103，其反射频谱在蓝光波段的反射率更高，蓝光的出光效率和激发能量也更高，更有利于提升光效。
如图1所示，所述LED芯片105分布于所述耐高温膜层104上且对应的电连接至所述导线1020（标号见图2）；所述LED芯片105长宽尺寸范围均为100μm-500μm。
在具体固晶时，该面光源100还蚀刻有若干通孔107，每一所述通孔107贯穿整个所述耐高温膜层104和所述镜面反射层103，所述通孔107的位置对应于所述焊盘1021。该引脚穿过所述通孔107固定至所述焊盘1021。
所述荧光膜106覆于若干所述LED芯片105及所述耐高温膜层104上。
如图4所示，为了能够完整地实现上述实施例面光源100，本发明还提供了一种面光源100的制备方法，具体包括步骤S01-S08。
以下描述涉及到的元件或结构符号请同时参照图1及图2。
S01：提供一基板101；所述基板101为FPC基板或PCB基板。
S02：在所述基板101的上表面附着若干导线1020，形成一导线层102；所述导线1020可采用铜质导线，所述铜质导线附着在所述基板101的上表面形成面光源100的基本架构。
S03：在所述基板101具有所述导线1020的一面，溅镀形成一镜面反射层103；所述镜面反射层103覆盖面光源100的基本架构上铜质导线所在的整个面。所述镜面反射层103的厚度为1μm -5μm，优选为3μm；所述镜面反射层103的表面粗糙度为0.1μm-0.3μm，其平均表面粗糙度一般为0. 2μm。
S04：在所述镜面反射层103上胶合一耐高温膜层104；其中，所述耐高温膜层104的耐热温度为200℃-500℃，其穿透率高于90%，其厚度100μm-150μm，优选为120μm -130μm。所述耐高温膜层104与所述镜面反射层103通过胶层粘合，保证所述耐高温膜层104与所述镜面反射层103能够紧密贴合。
S05：蚀刻出贯穿整个所述耐高温膜层104和所述镜面反射层103的若干通孔107，由于所述导线层102上具有与所述导线1020连接的焊盘1021，在实际情况中，每一所述LED芯片105均具有相应的引脚，该引脚分为P极和N极，而导线1020也分为P极导线和N极导线，在N极导线和P极导线上设置相应的焊盘1021，所述通孔107的位置对应于所述焊盘1021，所述通孔107蚀刻完成后，能够暴露出所述基板的焊盘1021，以利后续作业。
S06：在所述耐高温膜层104上设置若干LED芯片105，每一所述LED芯片105均对应的电连接至所述导线层102中的相对应的导线。具体的，所述LED芯片105的引脚穿过对应的所述通孔107并通过刷锡膏工艺、固晶工艺和回流焊工艺固定在所述焊盘1021上。刷锡膏工艺中，将锡膏涂覆在焊盘1021位置，之后通过固晶工艺和回流焊工艺固定LED芯片105。所述回流焊工艺为激光回流焊工艺。本实施例中，采用激光回流焊工艺对每颗LED芯片105进行焊接，区别于常规的热气回流焊工艺，常规的热气回流焊工艺焊接时，其所占用的焊接面积大，而采用激光回流焊工艺焊接时，可以通过光学系统将激光束聚集在焊盘1021区域内，在较短时间内使焊盘1021区域形成局部加热区，从而避免了用常规的热气回流焊工艺焊接时带来的基板或各膜层涨缩的影响。
S07：在所述耐高温膜层104和LED芯片105上热压一荧光膜106，热压温度为：130℃-150℃；热压时间为10 min-15min（即10至15分钟）。其中，热压温度为130℃-150℃，所述耐高温膜层104的耐热温度为200℃-500℃，热压温度远低于耐高温膜层104的耐热温度，可以有效的保护所述镜面反射层103不受热压温度影响。在所述耐高温膜层104和LED芯片105上热压一荧光膜106后，得到面光源100的半成品。
S08：将面光源100的半成品放入烤箱，在130℃-150℃的温度下烘烤2 min -10min，使所述荧光膜106进一步固化，得到面光源100的成品。
下面将以miniLED显示装置为例介绍本发明显示装置的构造。
如图5所示，在其中一实施例中，本发明miniLED显示装置包括背光装置1、第一偏光片2、第一玻璃基板3、第一电极层4、液晶分子层5、第二电极层6、彩色滤光片7、第二玻璃基板8和第二偏光片9。其中，第一偏光片2和第二偏光片9相对设置，且位于所述背光装置1上，第一玻璃基板3、第二玻璃基板8相对设置，位于第一偏光片2和第二偏光片9之间，第一电极层4和第二电极层6设于第一玻璃基板3和第二玻璃基板8之间，液晶分子层5设于第一电极层4和第二电极层6之间，彩色滤光片7设于第二玻璃基板8和第二电极层6之间。所述背光装置1发出的光依次经过第一偏光片2、第一玻璃基板3、液晶分子5、彩色滤光片7、第二玻璃基板8和第二偏光片9后透出。
所述背光装置1包括本发明实施例的面光源100以及至少一个光学膜片110。其中，所述光学膜片110配置于该面光源100上，其例如是扩散片、棱镜片、增光片或其组合。
由于本发明的重点在于miniLED显示装置的背光装置1中的面光源100，因此对于miniLED显示装置其他构件就不在一一赘述。
当然，本实施例的所述背光装置1还可以应用到其他种类的miniLED显示装置中，本实施例中所列举的miniLED液晶显示装置仅仅是对本发明的一种解释说明，而不是对本发明的一种限制。
以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种面光源，其包括
    一基板；
    一导线层，具有若干根导线，分布于所述基板的一表面；
    一镜面反射层，覆于所述导线层上；
    一耐高温膜层，覆于所述镜面反射层上；
    若干LED芯片，分布于所述耐高温膜层上且对应的电连接至所述导线；
    一荧光膜，覆于所述LED芯片及所述耐高温膜层上。
  2. 根据权利要求1所述的面光源，其中，所述耐高温膜层的耐热温度为200℃-500℃，其穿透率高于90%，其厚度为100μm-150μm。
  3. 根据权利要求1所述的面光源，其中，所述耐高温膜层所用材料为聚碳酸酯共聚物、聚芳醚酮衍生物、聚酰亚胺砜衍生物、聚酰亚胺类衍生物、芳香聚杂环类衍生物中的一种。
  4. 根据权利要求1所述的面光源，其中，所述镜面反射层的厚度为1μm -5μm；所述镜面反射层的表面粗糙度为0.1μm-0.3μm。
  5. 根据权利要求1所述的面光源，其中，该面光源还蚀刻有若干通孔，每一所述通孔贯穿整个所述耐高温膜层和所述镜面反射层；所述导线层上具有与所述导线连接的焊盘，所述通孔的位置对应于所述焊盘，每一所述LED芯片具有相应的引脚，所述引脚穿过所述通孔固定至所述焊盘。
  6. 一种根据权利要求1所述的面光源的制备方法，其包括如下步骤：
    提供一柔性基板；
    在所述柔性基板的一表面附着若干导线，形成一导线层；
    在所述柔性基板具有所述导线的一面，溅镀形成一镜面反射层；
    在所述镜面反射层上胶合一耐高温膜层；
    在所述耐高温膜层上设置若干LED芯片，每一所述LED芯片对应的电连接至所述导线层中的导线；
    在所述耐高温膜层和所述LED芯片上热压一荧光膜。
  7. 根据权利要求6所述的面光源的制备方法，其中，
    在所述耐高温膜层上设置所述LED芯片之前，还包括如下步骤：
    蚀刻出贯穿整个所述耐高温膜层和所述镜面反射层若干通孔，所述导线层上具有与所述导线连接的焊盘，所述通孔的位置对应于所述焊盘；
    每一所述LED芯片具有相应的引脚，在所述耐高温膜层上设置所述LED芯片时，所述引脚穿过所述通孔并通过刷锡膏工艺、固晶工艺和回流焊工艺固定在所述焊盘上。
  8. 根据权利要求7所述的面光源的制备方法，其中，所述回流焊工艺为激光回流焊工艺。
  9. 根据权利要求6所述的面光源的制备方法，其中，在所述耐高温膜层和LED芯片上热压一荧光膜时，热压温度为：130℃-150℃；热压时间为10 min-15min；
    在所述耐高温膜层和所述LED芯片上热压一荧光膜后，得到面光源的半成品，将面光源的半成品在130℃-150℃的温度下烘烤2 min -10min，得到面光源的成品。
  10. 一种显示装置，其包括如权利要求1所述的面光源。
PCT/CN2018/117313 2018-09-27 2018-11-23 面光源、其制备方法及采用该面光源的显示装置 Ceased WO2020062525A1 (zh)

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