WO2020062215A1 - Stress detection device and stress detection matrix system - Google Patents

Stress detection device and stress detection matrix system Download PDF

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Publication number
WO2020062215A1
WO2020062215A1 PCT/CN2018/109016 CN2018109016W WO2020062215A1 WO 2020062215 A1 WO2020062215 A1 WO 2020062215A1 CN 2018109016 W CN2018109016 W CN 2018109016W WO 2020062215 A1 WO2020062215 A1 WO 2020062215A1
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Prior art keywords
material sheet
layered material
dimensional layered
stress
stress detection
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PCT/CN2018/109016
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French (fr)
Chinese (zh)
Inventor
闫培光
陈浩
尹金德
邢凤飞
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深圳大学
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Priority to PCT/CN2018/109016 priority Critical patent/WO2020062215A1/en
Publication of WO2020062215A1 publication Critical patent/WO2020062215A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress

Definitions

  • the invention relates to the technical field of stress detection, in particular to a stress detection device and a stress detection matrix system.
  • Stress detection is widely used in people's daily life. Among them, it has a wide range of applications in biomedicine, instrument erection, seal testing, automotive, ergonomics, and packaging sealing, and brings great economic value.
  • the stress detection equipment on the market is usually prepared by the principle of optical sensing or mechanical stress detection.
  • the stress signal is converted into an electrical signal for detection.
  • Common stress detection devices include strain gauges, variable capacitors, and piezoelectric devices. These types of detection devices have complex structures and low sensitivity, and because of their large size, it is difficult to accurately measure stress in the micron range.
  • the main purpose of the present invention is to provide a stress detection device and a stress detection matrix system, which aim to solve the technical problem that the stress detection device in the prior art has low sensitivity, large volume, and difficulty in accurately measuring the stress in the micron region.
  • a first aspect of the present invention provides a stress detection device, which includes a silicon substrate and a detection component, the silicon substrate is provided with a groove, and the detection component includes a flexible substrate and a two-dimensional layered structure.
  • Material sheet and detection circuit
  • the two-dimensional layered material sheet is disposed on a designated surface of the flexible substrate, the two-dimensional layered material sheet is attached to the surface of the silicon substrate, and the two-dimensional layered material sheet is in contact with the surface of the silicon substrate.
  • the grooves are combined to form a cavity;
  • Electrodes are provided on both sides of the groove, and the detection circuit is electrically connected to the electrodes.
  • the two-dimensional layered material sheet and the electrode are in an ohmic contact relationship.
  • the flexible substrate is a high molecular organic polymer
  • the high molecular organic polymer includes at least one of polymethyl methacrylate, polyvinyl alcohol, and polydimethylsiloxane.
  • the two-dimensional layered material sheet includes at least one of transition metal sulfide and black phosphorus.
  • the detection circuit includes a driving circuit for applying a bias voltage to the two-dimensional layered material sheet.
  • the detection circuit further includes an electrical signal amplification circuit and a stress detection circuit, the electrical signal amplification circuit is used to amplify the electrical signal generated in the two-dimensional layered material sheet, and the stress detection circuit is used to detect The amplified electrical signal in the two-dimensional layered material sheet.
  • the groove is processed on the surface of the silicon substrate by means of electron beam exposure or double beam etching.
  • the thickness of the flexible substrate is 10 ⁇ m to 30 ⁇ m.
  • the second aspect of the present invention provides a stress detection matrix system, which includes a substrate and a plurality of stress detection devices, and the plurality of stress detection devices are arranged in a preset arrangement manner. A surface of the substrate;
  • the stress detection device is a stress detection device provided by the first aspect of the present invention.
  • the stress detection device sets a two-dimensional layered material sheet on the surface of a flexible substrate, and then attaches the two-dimensional layered material sheet to silicon.
  • the surface of the substrate forms a cavity with the groove in the silicon substrate.
  • the electrical characteristics of the two-dimensional layered material sheet will be changed. Therefore, by measuring the change of the electrical signal in the two-dimensional layered material sheet, the magnitude of the external stress can be measured indirectly, and because the two-dimensional layered material is very sensitive to external forces, the measurement results will have higher sensitivity and accuracy. degree.
  • the structure of the above device is relatively simple, and the sizes of the silicon substrate and the detection component can be selected according to requirements, so it can also be applied to stress measurement in the micron-scale area.
  • FIG. 1 is a schematic cross-sectional view of a stress detection device according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of a three-dimensional structure of a stress detection device according to an embodiment of the present invention
  • FIG. 3 is a schematic structural diagram of a stress detection matrix system according to an embodiment of the present invention.
  • FIG. 1 is a schematic cross-sectional view of a stress detection device according to an embodiment of the present invention.
  • the above device includes a silicon substrate 10 and a detection component.
  • the silicon substrate 10 is provided with a groove 11 and the detection component includes The flexible substrate 21, the two-dimensional layered material sheet 22, and the detection circuit.
  • the two-dimensional layered material sheet 22 is disposed on the surface of the flexible substrate 21, the two-dimensional layered material sheet 22 is attached to the surface of the silicon substrate 10, and the two-dimensional layered material sheet 22 is combined with the groove 11 to form A cavity; electrodes 12 are provided on both sides of the groove 11, and a detection circuit is electrically connected to the electrodes 12.
  • the two-dimensional layered material sheet 22 and the electrode 12 are in an ohmic contact relationship and have a low impedance.
  • FIG. 2 is a schematic diagram of the three-dimensional structure of the stress detection device in the embodiment of the present invention.
  • the flexible substrate 21 is a high molecular organic polymer, which includes at least one of polymethyl methacrylate, polyvinyl alcohol, and polydimethylsiloxane, and has flexibility and bendability, and high tensile strength. Tensile strength and strong fatigue resistance.
  • the thickness of the substrate 102 is 10 ⁇ m ⁇ 30 ⁇ m.
  • the method for preparing the flexible substrate 21 includes the following steps:
  • Step 1 Dissolve the high molecular organic polymer powder in a specific solvent to obtain a solution based on the high molecular organic polymer;
  • Step 2 Select an appropriate amount of the high molecular organic polymer solution in a vessel and dry it in a drying box to obtain a corresponding film, which can be used as the flexible substrate 21.
  • the two-dimensional layered material sheet 22 includes at least one of transition metal sulfide and black phosphorus, wherein the transition metal sulfide is molybdenum disulfide, tungsten disulfide, tungsten diselenide, molybdenum diselenide, and diselenide. At least one of zirconium oxide, zirconium disulfide, tin disulfide, tin diselenide, tungsten ditelluride, molybdenum ditelluride, hafnium disulfide, hafnium diselenide, hafnium diselenide, hafnium disulfide and indium selenide One.
  • the two-dimensional layered material sheet 22 can be grown by a chemical vapor deposition method or a mechanical peeling method to obtain a single layer and few layers with a large area and high quality.
  • the two-dimensional layered material sheet 22 is a semiconductor material and has a stress-tunable electronic energy band characteristic.
  • the large-area single-layer or few-layer two-dimensional layered material sheet 22 is transferred to the surface of the flexible substrate 21, and the flexible substrate 21 is subjected to the stress of the external environment to cause surface deformation, so that the two-dimensional layered material sheet 22 surfaces provide corresponding stress effects.
  • the two-dimensional layered material sheet 22 is subjected to indirect stress, the material is prevented from directly contacting the external environment, and the service life of the two-dimensional layered material sheet 22 can be effectively improved.
  • the flexible substrate 21, as a carrier of the two-dimensional layered material sheet 22, can make the two-dimensional layered material sheet 22 evenly adhere to the surface of the silicon substrate 10, and also has high anti-fatigue performance, which further increases The mechanical strength of the two-dimensional layered material sheet 22 itself.
  • the electrode 12 is deposited from both sides of the groove 11 by thermal evaporation or magnetron sputtering, and is used to apply a bias voltage to the two-dimensional layered material sheet 22, and to magnify and detect the two-dimensional layer.
  • the current signal of the sheet-like material piece 22 itself is used to realize the measurement of the external stress change.
  • the above-mentioned detection circuit includes a driving circuit for applying a bias voltage to the two-dimensional layered material sheet 22.
  • the detection circuit also includes an electric signal amplification circuit and a stress detection circuit.
  • the electric signal amplification circuit is used to amplify the current signal generated in the two-dimensional layered material sheet 22, and the stress detection circuit detects the amplified circuit signal.
  • the change of the circuit signal can determine the stress to which the two-dimensional layered material sheet 22 is subjected.
  • the groove 11 is processed on the surface of the silicon substrate 10 by means of electron beam exposure or double beam etching. Specifically, the width of the groove 11 is 10 ⁇ m to 50 ⁇ m, and the length is 50 ⁇ m. -100 ⁇ m, height 5 ⁇ m -20 ⁇ m.
  • the groove 11 serves as a device for suspending the two-dimensional layered material sheet 22, which can cause the surface of the two-dimensional layered material sheet 22 to bend when subjected to stress, thereby changing the electrical characteristics of the two-dimensional layered material sheet 22. By detecting the change of the electrical signal in the two-dimensional layered material sheet 22, the stress to which the two-dimensional layered material sheet 22 is subjected can be obtained.
  • the stress detection device Compared with the prior art, the stress detection device provided by the embodiment of the present invention sets a two-dimensional layered material sheet on the surface of a flexible substrate, and then covers the surface of the silicon substrate and the recesses in the silicon substrate. The groove forms a cavity. Because the external stress causes the two-dimensional layered material sheet to be deformed in a suspended area, the electrical characteristics of the two-dimensional layered material sheet are changed. Therefore, the electrical signal in the two-dimensional layered material sheet is measured. Can be used to indirectly measure the magnitude of external stress, and because the two-dimensional layered material is very sensitive to external forces, the measurement result will have higher sensitivity and accuracy. At the same time, the structure of the above device is relatively simple, and the sizes of the silicon substrate and the detection component can be selected according to requirements, so it can also be applied to stress measurement in the micron-scale area.
  • FIG. 3 is a schematic structural diagram of a stress detection matrix system according to an embodiment of the present invention.
  • the foregoing stress detection matrix system includes a substrate 301 and a plurality of stress detection devices 302. The arrangement is arranged on the surface of the substrate 301.
  • the stress detection device 302 is a stress detection device provided by the foregoing embodiment of the present invention. For details, refer to the foregoing embodiment, and details are not described herein again.
  • each stress detection device 302 in the matrix system can independently detect the corresponding stress effect. Therefore, the matrix system can achieve accurate measurement of the stress distribution.
  • the measurement accuracy depends on the size of the stress detection device 302, and the detection range is on the order of micrometers.
  • a plurality of stress detection devices 302 are arranged on a substrate 301 in a matrix arrangement manner, and the stress detected by each stress detection device 302 is processed and analyzed to obtain The distribution of stresses in the detected area.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)

Abstract

Provided are a stress detection device and a stress detection matrix system. The stress detection device comprises: a silicon substrate (10) and a detection assembly, wherein the silicon substrate (10) is provided with a groove (11); the detection assembly comprises a flexible substrate (11), a two-dimensional layered material sheet (22) and a detection circuit; the two-dimensional layered material sheet (22) is arranged at a surface of the flexible substrate (21), the two-dimensional layered material sheet (22) is attached to a surface of the silicon substrate (10), and the two-dimensional layered material sheet (22) is jointed with the groove (11) to form a cavity; and two sides of the groove (11) are provided with electrodes (12), and the detection circuit is electrically connected to the electrodes (12). The stress detection device can indirectly measure the magnitude of an external stress by measuring the change in electrical signals in the two-dimensional layered material sheet (22), and the measurement result has a higher accuracy. The device also has a simple structure, and the sizes of the silicon substrate (10) and the detection assembly can be selected according to requirements, so that the device can also be applied to stress measurement of a micron-sized region.

Description

应力探测装置与应力探测矩阵系统Stress detection device and stress detection matrix system 技术领域Technical field
本发明涉及应力探测技术领域，尤其涉及一种应力探测装置与应力探测矩阵系统。The invention relates to the technical field of stress detection, in particular to a stress detection device and a stress detection matrix system.
背景技术Background technique
物体由于外因（受力、湿度、温度变化等）而变形时，在物体内各部分之间会产生相互作用的内力，单位面积上的内力称为应力。应力探测被普遍的应用到人们的日常生活当中，其中在生物医疗，仪器架设、密封检测、汽车、人体工学和包装密封等领域具有广泛的应用，并带来了巨大的经济价值。When an object is deformed due to external factors (force, humidity, temperature change, etc.), internal forces interacting between various parts of the object. The internal force per unit area is called stress. Stress detection is widely used in people's daily life. Among them, it has a wide range of applications in biomedicine, instrument erection, seal testing, automotive, ergonomics, and packaging sealing, and brings great economic value.
目前，市场上的应力检测设备通常都是采用光学传感或机械应力探测的原理进行制备，在使用时，通过将应力信号转换成电信号进行探测。常见的应力检测器件包括应变仪、可变电容和压电器件等，该类检测器件的结构复杂，灵敏度较低，且由于体积较大，很难准确的对微米级的区域进行应力测量。At present, the stress detection equipment on the market is usually prepared by the principle of optical sensing or mechanical stress detection. When in use, the stress signal is converted into an electrical signal for detection. Common stress detection devices include strain gauges, variable capacitors, and piezoelectric devices. These types of detection devices have complex structures and low sensitivity, and because of their large size, it is difficult to accurately measure stress in the micron range.
技术解决方案Technical solutions
本发明的主要目的在于提供一种应力探测装置与应力探测矩阵系统，旨在解决现有技术中的应力检测装置灵敏度低，体积大，难以准确测量微米级区域的应力的技术问题。The main purpose of the present invention is to provide a stress detection device and a stress detection matrix system, which aim to solve the technical problem that the stress detection device in the prior art has low sensitivity, large volume, and difficulty in accurately measuring the stress in the micron region.
为实现上述目的，本发明第一方面提供一种应力探测装置，该装置包括硅衬底与探测组件，所述硅衬底设置有凹槽，所述探测组件包括柔性衬底、二维层状材料片及探测电路；In order to achieve the above object, a first aspect of the present invention provides a stress detection device, which includes a silicon substrate and a detection component, the silicon substrate is provided with a groove, and the detection component includes a flexible substrate and a two-dimensional layered structure. Material sheet and detection circuit;
所述二维层状材料片设置于所述柔性衬底的指定表面，所述二维层状材料片与所述硅衬底的表面相贴合，且所述二维层状材料片与所述凹槽结合形成一空腔；The two-dimensional layered material sheet is disposed on a designated surface of the flexible substrate, the two-dimensional layered material sheet is attached to the surface of the silicon substrate, and the two-dimensional layered material sheet is in contact with the surface of the silicon substrate. The grooves are combined to form a cavity;
所述凹槽的两侧设置有电极，所述探测电路与所述电极电性连接。Electrodes are provided on both sides of the groove, and the detection circuit is electrically connected to the electrodes.
可选的，所述二维层状材料片与所述电极之间为欧姆接触关系。Optionally, the two-dimensional layered material sheet and the electrode are in an ohmic contact relationship.
可选的，所述柔性衬底为高分子有机聚合物，所述高分子有机聚合物包括聚甲基丙烯酸甲酯、聚乙烯醇和聚二甲基硅氧烷中的至少一种。Optionally, the flexible substrate is a high molecular organic polymer, and the high molecular organic polymer includes at least one of polymethyl methacrylate, polyvinyl alcohol, and polydimethylsiloxane.
可选的，所述二维层状材料片包括过渡金属硫化物和黑磷中的至少一种。Optionally, the two-dimensional layered material sheet includes at least one of transition metal sulfide and black phosphorus.
可选的，所述探测电路包括驱动电路，所述驱动电路用于对所述二维层状材料片施加偏置电压。Optionally, the detection circuit includes a driving circuit for applying a bias voltage to the two-dimensional layered material sheet.
可选的，所述探测电路还包括电信号放大电路和应力探测电路，所述电信号放大电路用于放大所述二维层状材料片中产生的电信号，所述应力探测电路用于探测所述二维层状材料片中被放大的电信号。Optionally, the detection circuit further includes an electrical signal amplification circuit and a stress detection circuit, the electrical signal amplification circuit is used to amplify the electrical signal generated in the two-dimensional layered material sheet, and the stress detection circuit is used to detect The amplified electrical signal in the two-dimensional layered material sheet.
可选的，所述凹槽是利用电子束曝光或双束刻蚀的方式在所述硅衬底表面加工而成。Optionally, the groove is processed on the surface of the silicon substrate by means of electron beam exposure or double beam etching.
可选的，所述柔性衬底的厚度为10μm~30 μm。Optionally, the thickness of the flexible substrate is 10 μm to 30 μm.
为实现上述目的，本发明第二方面提供一种应力探测矩阵系统，该应力探测矩阵系统包括衬底与若干个应力探测装置，所述若干个应力探测装置按照预设的排布方式排布于所述衬底的表面；To achieve the above object, the second aspect of the present invention provides a stress detection matrix system, which includes a substrate and a plurality of stress detection devices, and the plurality of stress detection devices are arranged in a preset arrangement manner. A surface of the substrate;
所述应力探测装置为本发明第一方面提供的应力探测装置。The stress detection device is a stress detection device provided by the first aspect of the present invention.
有益效果Beneficial effect
本发明实施例所提供的应力探测装置，相较于现有技术而言，本发明将二维层状材料片设置于柔性衬底的表面，然后再将二维层状材料片贴合于硅衬底的表面，与硅衬底中的凹槽形成一空腔，由于当外部应力使二维层状材料片处于悬空的区域发生形变时，便会改变二维层状材料片本身的电学特性，因此通过测量二维层状材料片中电信号的变化情况，即可间接测量出外部应力的大小，且由于二维层状材料对外力作用非常敏感，因此测量结果会具有较高的灵敏度与准确度。同时，上述装置结构较简单，可以根据需求来选择硅衬底与探测组件的尺寸，故还能够应用于微米级区域的应力测量。Compared with the prior art, the stress detection device provided by the embodiment of the present invention sets a two-dimensional layered material sheet on the surface of a flexible substrate, and then attaches the two-dimensional layered material sheet to silicon. The surface of the substrate forms a cavity with the groove in the silicon substrate. When the external stress deforms the two-dimensional layered material sheet in a suspended area, the electrical characteristics of the two-dimensional layered material sheet will be changed. Therefore, by measuring the change of the electrical signal in the two-dimensional layered material sheet, the magnitude of the external stress can be measured indirectly, and because the two-dimensional layered material is very sensitive to external forces, the measurement results will have higher sensitivity and accuracy. degree. At the same time, the structure of the above device is relatively simple, and the sizes of the silicon substrate and the detection component can be selected according to requirements, so it can also be applied to stress measurement in the micron-scale area.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1为本发明实施例中应力探测装置的切面示意图；1 is a schematic cross-sectional view of a stress detection device according to an embodiment of the present invention;
图2为本发明实施例中应力探测装置的立体结构示意图；FIG. 2 is a schematic diagram of a three-dimensional structure of a stress detection device according to an embodiment of the present invention; FIG.
图3为本发明实施例中应力探测矩阵系统的结构示意图。FIG. 3 is a schematic structural diagram of a stress detection matrix system according to an embodiment of the present invention.
本发明的最佳实施方式Best Mode of the Invention
为使得本发明的发明目的、特征、优点能够更加的明显和易懂，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而非全部实施例。基于本发明中的实施例，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。In order to make the objectives, features, and advantages of the present invention more obvious and easier to understand, the technical solutions in the embodiments of the present invention will be described clearly and completely in combination with the accompanying drawings in the embodiments of the present invention. Obviously, the described The embodiments are only a part of the embodiments of the present invention, but not all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative work fall into the protection scope of the present invention.
请参阅图1，图1为本发明实施例中应力探测装置的切面示意图，本发明实施例中，上述装置包括硅衬底10与探测组件，硅衬底10设置有凹槽11，探测组件包括柔性衬底21、二维层状材料片22及探测电路。Please refer to FIG. 1. FIG. 1 is a schematic cross-sectional view of a stress detection device according to an embodiment of the present invention. In the embodiment of the present invention, the above device includes a silicon substrate 10 and a detection component. The silicon substrate 10 is provided with a groove 11 and the detection component includes The flexible substrate 21, the two-dimensional layered material sheet 22, and the detection circuit.
其中，二维层状材料片22设置于柔性衬底21的表面，二维层状材料片22与硅衬底10的表面相贴合，且二维层状材料片22与凹槽11结合形成一空腔；凹槽11的两侧设置有电极12，探测电路与电极12电性连接。The two-dimensional layered material sheet 22 is disposed on the surface of the flexible substrate 21, the two-dimensional layered material sheet 22 is attached to the surface of the silicon substrate 10, and the two-dimensional layered material sheet 22 is combined with the groove 11 to form A cavity; electrodes 12 are provided on both sides of the groove 11, and a detection circuit is electrically connected to the electrodes 12.
其中，二维层状材料片22与电极12之间为欧姆接触关系，具有较低的阻抗。Among them, the two-dimensional layered material sheet 22 and the electrode 12 are in an ohmic contact relationship and have a low impedance.
为了更好的理解本发明实施例，请参照图2，图2为本发明实施例中应力探测装置的立体结构示意图。In order to better understand the embodiment of the present invention, please refer to FIG. 2, which is a schematic diagram of the three-dimensional structure of the stress detection device in the embodiment of the present invention.
其中，柔性衬底21为高分子有机聚合物，该高分子有机聚合物包括聚甲基丙烯酸甲酯、聚乙烯醇和聚二甲基硅氧烷中的至少一种，具有柔性可弯曲，高拉伸强度和较强的抗疲劳等特点。其中，衬底102的厚度为10μm ~30 μm。Wherein, the flexible substrate 21 is a high molecular organic polymer, which includes at least one of polymethyl methacrylate, polyvinyl alcohol, and polydimethylsiloxane, and has flexibility and bendability, and high tensile strength. Tensile strength and strong fatigue resistance. Wherein, the thickness of the substrate 102 is 10 μm ~ 30 μm.
另外，柔性衬底21的制备方法包括以下步骤：In addition, the method for preparing the flexible substrate 21 includes the following steps:
步骤一：将高分子有机聚合物粉末溶于特定的溶剂中，得到基于高分子有机聚合物的溶液;Step 1: Dissolve the high molecular organic polymer powder in a specific solvent to obtain a solution based on the high molecular organic polymer;
步骤二：选取适量的高分子有机聚合物溶液于器皿中，置于烘干箱内烘干，得到相应的薄膜，该薄膜即可作为柔性衬底21使用。Step 2: Select an appropriate amount of the high molecular organic polymer solution in a vessel and dry it in a drying box to obtain a corresponding film, which can be used as the flexible substrate 21.
其中，二维层状材料片22包括过渡金属硫化物和黑磷中的至少一种，其中，过渡金属硫化物为二硫化钼、二硫化钨、二硒化钨、二硒化钼、二硒化锆、二硫化锆、二硫化锡、二硒化锡、二碲化钨、二碲化钼、二硫化铪、二硒化铪、二硒化铼、二硫化铼和硒化铟中的至少一种。另外，二维层状材料片22可以通过化学气相沉积法生长制备或机械剥离法得到大面积高质量的单层和少层。The two-dimensional layered material sheet 22 includes at least one of transition metal sulfide and black phosphorus, wherein the transition metal sulfide is molybdenum disulfide, tungsten disulfide, tungsten diselenide, molybdenum diselenide, and diselenide. At least one of zirconium oxide, zirconium disulfide, tin disulfide, tin diselenide, tungsten ditelluride, molybdenum ditelluride, hafnium disulfide, hafnium diselenide, hafnium diselenide, hafnium disulfide and indium selenide One. In addition, the two-dimensional layered material sheet 22 can be grown by a chemical vapor deposition method or a mechanical peeling method to obtain a single layer and few layers with a large area and high quality.
其中，二维层状材料片22为一种半导体材料，具有应力可调谐的电子能带特性。Wherein, the two-dimensional layered material sheet 22 is a semiconductor material and has a stress-tunable electronic energy band characteristic.
具体地，将大面积单层或少层的二维层状材料片22转移到柔性衬底21表面，柔性衬底21受到外部环境的应力作用发生表面的形变，从而对二维层状材料片22表面提供相应的应力作用。另外，由于二维层状材料片22受到的是间接的应力作用，避免了材料直接与外部环境接触，可以有效的提高二维层状材料片22的使用寿命。Specifically, the large-area single-layer or few-layer two-dimensional layered material sheet 22 is transferred to the surface of the flexible substrate 21, and the flexible substrate 21 is subjected to the stress of the external environment to cause surface deformation, so that the two-dimensional layered material sheet 22 surfaces provide corresponding stress effects. In addition, since the two-dimensional layered material sheet 22 is subjected to indirect stress, the material is prevented from directly contacting the external environment, and the service life of the two-dimensional layered material sheet 22 can be effectively improved.
另外，柔性衬底21作为二维层状材料片22的载体，能够使得二维层状材料片22均匀的紧贴在硅衬底10的表面，还具有较高的抗疲劳性能，进一步增加了二维层状材料片22本身的机械强度。In addition, the flexible substrate 21, as a carrier of the two-dimensional layered material sheet 22, can make the two-dimensional layered material sheet 22 evenly adhere to the surface of the silicon substrate 10, and also has high anti-fatigue performance, which further increases The mechanical strength of the two-dimensional layered material sheet 22 itself.
其中，上述电极12是由凹槽11两侧使用热蒸镀或磁控溅射的方式沉积而成，用于对二维层状材料片22施加偏置电压，以及放大和探测通过二维层状材料片22本身的电流信号，以实现对外部应力变化的测量。The electrode 12 is deposited from both sides of the groove 11 by thermal evaporation or magnetron sputtering, and is used to apply a bias voltage to the two-dimensional layered material sheet 22, and to magnify and detect the two-dimensional layer. The current signal of the sheet-like material piece 22 itself is used to realize the measurement of the external stress change.
进一步地，上述探测电路包括驱动电路，该驱动电路用于对二维层状材料片22施加偏置电压。Further, the above-mentioned detection circuit includes a driving circuit for applying a bias voltage to the two-dimensional layered material sheet 22.
同时，上述探测电路还包括电信号放大电路和应力探测电路，电信号放大电路用于放大二维层状材料片22中产生的电流信号，应力探测电路探测放大后的电路信号，根据探测到的电路信号的变化情况即可确定二维层状材料片22受到的应力。At the same time, the detection circuit also includes an electric signal amplification circuit and a stress detection circuit. The electric signal amplification circuit is used to amplify the current signal generated in the two-dimensional layered material sheet 22, and the stress detection circuit detects the amplified circuit signal. The change of the circuit signal can determine the stress to which the two-dimensional layered material sheet 22 is subjected.
其中，凹槽11是利用电子束曝光或双束刻蚀的方式在硅衬底10表面加工而成。具体地，凹槽11的宽度为10μm -50 μm，长度为50μm -100 μm，高度为5μm -20μm。凹槽11作为将二维层状材料片22悬空的器件，可以使得二维层状材料片22在受到应力作用时表面发生弯曲，进而改变了二维层状材料片22本身的电学特性，通过检测二维层状材料片22中电信号的变化情况，即可得到二维层状材料片22受到的应力。The groove 11 is processed on the surface of the silicon substrate 10 by means of electron beam exposure or double beam etching. Specifically, the width of the groove 11 is 10 μm to 50 μm, and the length is 50 μm. -100 μm, height 5μm -20μm. The groove 11 serves as a device for suspending the two-dimensional layered material sheet 22, which can cause the surface of the two-dimensional layered material sheet 22 to bend when subjected to stress, thereby changing the electrical characteristics of the two-dimensional layered material sheet 22. By detecting the change of the electrical signal in the two-dimensional layered material sheet 22, the stress to which the two-dimensional layered material sheet 22 is subjected can be obtained.
本发明实施例所提供的应力探测装置，相较于现有技术而言，将二维层状材料片设置于柔性衬底的表面，然后覆盖于硅衬底表面，与硅衬底中的凹槽形成一空腔，由于当外部应力使二维层状材料片处于悬空的区域发生形变时，便会改变二维层状材料片本身的电学特性，因此通过测量二维层状材料片中电信号的变化情况，即可间接测量出外部应力的大小，且由于二维层状材料对外力作用非常敏感，因此测量结果会具有较高的灵敏度与准确度。同时，上述装置结构较简单，可以根据需求来选择硅衬底与探测组件的尺寸，故还能够应用于微米级区域的应力测量。Compared with the prior art, the stress detection device provided by the embodiment of the present invention sets a two-dimensional layered material sheet on the surface of a flexible substrate, and then covers the surface of the silicon substrate and the recesses in the silicon substrate. The groove forms a cavity. Because the external stress causes the two-dimensional layered material sheet to be deformed in a suspended area, the electrical characteristics of the two-dimensional layered material sheet are changed. Therefore, the electrical signal in the two-dimensional layered material sheet is measured. Can be used to indirectly measure the magnitude of external stress, and because the two-dimensional layered material is very sensitive to external forces, the measurement result will have higher sensitivity and accuracy. At the same time, the structure of the above device is relatively simple, and the sizes of the silicon substrate and the detection component can be selected according to requirements, so it can also be applied to stress measurement in the micron-scale area.
进一步地，参照图3，图3为本发明实施例中应力探测矩阵系统的结构示意图，上述应力探测矩阵系统包括衬底301与若干个应力探测装置302，若干个应力探测装置302按照预设的排布方式排布于衬底301的表面。Further, referring to FIG. 3, FIG. 3 is a schematic structural diagram of a stress detection matrix system according to an embodiment of the present invention. The foregoing stress detection matrix system includes a substrate 301 and a plurality of stress detection devices 302. The arrangement is arranged on the surface of the substrate 301.
其中，应力探测装置302为本发明上述实施例所提供的应力探测装置，具体可参照上述实施例，在此不再赘述。The stress detection device 302 is a stress detection device provided by the foregoing embodiment of the present invention. For details, refer to the foregoing embodiment, and details are not described herein again.
其中，上述若干个应力探测装置302之间相互独立，当外界对上述应力探测矩阵系统施加应力作用时，矩阵系统中的各个应力探测装置302能够独立的对所受到的应力作用进行相应的探测，因此该矩阵系统能够实现对应力分布的精确测量，测量精度取决于应力探测装置302的大小，探测范围在微米量级。The above-mentioned several stress detection devices 302 are independent of each other. When external stress is applied to the above-mentioned stress detection matrix system, each stress detection device 302 in the matrix system can independently detect the corresponding stress effect. Therefore, the matrix system can achieve accurate measurement of the stress distribution. The measurement accuracy depends on the size of the stress detection device 302, and the detection range is on the order of micrometers.
可以理解的是，若应力探测矩阵系统进行探测的区域中的应力分布不均匀时，各个应力探测装置302所检测到的应力也会不同，从而根据各个应力探测装置302所检测到的应力，即可得到检测区域的应力分布情况。It can be understood that if the stress distribution in the area detected by the stress detection matrix system is uneven, the stress detected by each stress detection device 302 will also be different, so according to the stress detected by each stress detection device 302, that is, The stress distribution of the detection area can be obtained.
本发明实施例所提供的应力探测矩阵系统，将若干个应力探测装置302按照矩阵的排布方式排布在衬底301上，通过各个应力探测装置302探测到的应力进行处理分析，即可得到所探测区域所受到的应力的分布情况。In the stress detection matrix system provided by the embodiment of the present invention, a plurality of stress detection devices 302 are arranged on a substrate 301 in a matrix arrangement manner, and the stress detected by each stress detection device 302 is processed and analyzed to obtain The distribution of stresses in the detected area.
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其它实施例的相关描述。In the above embodiments, the description of each embodiment has its own emphasis. For a part that is not described in detail in an embodiment, reference may be made to related descriptions in other embodiments.
以上为对本发明所提供的一种应力探测装置与应力探测矩阵系统的描述，对于本领域的技术人员，依据本发明实施例的思想，在具体实施方式及应用范围上均会有改变之处，综上，本说明书内容不应理解为对本发明的限制。The foregoing is a description of a stress detection device and a stress detection matrix system provided by the present invention. For those skilled in the art, according to the ideas of the embodiments of the present invention, there will be changes in the specific implementation and application scope. In summary, the content of this specification should not be construed as a limitation on the present invention.

Claims (9)

  1. 一种应力探测装置，其特征在于，所述装置包括硅衬底与探测组件，所述硅衬底设置有凹槽，所述探测组件包括柔性衬底、二维层状材料片及探测电路； A stress detection device, characterized in that the device includes a silicon substrate and a detection component, the silicon substrate is provided with a groove, and the detection component includes a flexible substrate, a two-dimensional layered material sheet, and a detection circuit;
    所述二维层状材料片设置于所述柔性衬底的表面，所述二维层状材料片与所述硅衬底的表面相贴合，且所述二维层状材料片与所述凹槽结合形成一空腔；The two-dimensional layered material sheet is disposed on a surface of the flexible substrate, the two-dimensional layered material sheet is attached to a surface of the silicon substrate, and the two-dimensional layered material sheet is in contact with the surface of the flexible substrate. The grooves are combined to form a cavity;
    所述凹槽的两侧设置有电极，所述探测电路与所述电极电性连接。Electrodes are provided on both sides of the groove, and the detection circuit is electrically connected to the electrodes.
  2. 如权利要求1所述的装置，其特征在于，所述二维层状材料片与所述电极之间为欧姆接触关系。 The device according to claim 1, wherein the two-dimensional layered material sheet and the electrode are in an ohmic contact relationship.
  3. 如权利要求1所述的装置，其特征在于，所述柔性衬底为高分子有机聚合物，所述高分子有机聚合物包括聚甲基丙烯酸甲酯、聚乙烯醇和聚二甲基硅氧烷中的至少一种。 The device according to claim 1, wherein the flexible substrate is a high molecular organic polymer, and the high molecular organic polymer includes polymethyl methacrylate, polyvinyl alcohol, and polydimethylsiloxane At least one of.
  4. 如权利要求1所述的装置，其特征在于，所述二维层状材料片包括过渡金属硫化物和黑磷中的至少一种。 The device of claim 1, wherein the two-dimensional layered material sheet includes at least one of a transition metal sulfide and black phosphorus.
  5. 如权利要求1所述的装置，其特征在于，所述探测电路包括驱动电路，所述驱动电路用于对所述二维层状材料片施加偏置电压。 The device according to claim 1, wherein the detection circuit comprises a driving circuit for applying a bias voltage to the two-dimensional layered material sheet.
  6. 如权利要求5所述的装置，其特征在于，所述探测电路还包括电信号放大电路和应力探测电路，所述电信号放大电路用于放大所述二维层状材料片中产生的电信号，所述应力探测电路用于探测所述二维层状材料片中被放大的电信号。 The device according to claim 5, wherein the detection circuit further comprises an electric signal amplification circuit and a stress detection circuit, and the electric signal amplification circuit is configured to amplify an electric signal generated in the two-dimensional layered material sheet. The stress detection circuit is configured to detect an amplified electrical signal in the two-dimensional layered material sheet.
  7. 如权利要求1至6任意一项所述的装置，其特征在于，所述凹槽是利用电子束曝光或双束刻蚀的方式在所述硅衬底表面加工而成。The device according to any one of claims 1 to 6, wherein the groove is processed on the surface of the silicon substrate by means of electron beam exposure or double beam etching.
  8. 如权利要求7所述的装置，其特征在于，所述柔性衬底的厚度为10μm~30 μm。 The device according to claim 7, wherein a thickness of the flexible substrate is 10 μm to 30 μm.
  9. 一种应力探测矩阵系统，其特征在于，所述应力探测矩阵系统包括衬底与若干个应力探测装置，所述若干个应力探测装置按照预设的排布方式排布于所述衬底的表面； A stress detection matrix system is characterized in that the stress detection matrix system includes a substrate and a plurality of stress detection devices, and the plurality of stress detection devices are arranged on a surface of the substrate in a preset arrangement manner. ;
    所述应力探测装置为权利要求1至8中任意一项所述的应力探测装置。The stress detection device is the stress detection device according to any one of claims 1 to 8.
PCT/CN2018/109016 2018-09-30 2018-09-30 Stress detection device and stress detection matrix system WO2020062215A1 (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102539029A (en) * 2012-02-29 2012-07-04 上海交通大学 Three-dimensional fluid stress sensor based on flexible MEMS (microelectromechanical system) technology and array thereof
US20150020610A1 (en) * 2013-07-18 2015-01-22 Kulite Semiconductor Products, Inc. Two dimensional material-based pressure sensor
CN104596683A (en) * 2015-02-12 2015-05-06 南京大学 Pressure sensor based on stratified materials and piezoelectric effect measuring system
CN105486435A (en) * 2016-01-04 2016-04-13 沈阳化工大学 MEMS polysilicon nanofilm pressure sensor chip and manufacturing method thereof
CN105509932A (en) * 2014-10-10 2016-04-20 意法半导体股份有限公司 Pressure sensor, testing device and related method
CN106441645A (en) * 2016-09-29 2017-02-22 中国科学院重庆绿色智能技术研究院 Graphene pressure sensor array system and preparation method thereof
CN108195492A (en) * 2018-01-19 2018-06-22 上海电力学院 Utilize the hypersensitive strain gauge of two-dimentional phase transformation material preparation

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102539029A (en) * 2012-02-29 2012-07-04 上海交通大学 Three-dimensional fluid stress sensor based on flexible MEMS (microelectromechanical system) technology and array thereof
US20150020610A1 (en) * 2013-07-18 2015-01-22 Kulite Semiconductor Products, Inc. Two dimensional material-based pressure sensor
CN105509932A (en) * 2014-10-10 2016-04-20 意法半导体股份有限公司 Pressure sensor, testing device and related method
CN104596683A (en) * 2015-02-12 2015-05-06 南京大学 Pressure sensor based on stratified materials and piezoelectric effect measuring system
CN105486435A (en) * 2016-01-04 2016-04-13 沈阳化工大学 MEMS polysilicon nanofilm pressure sensor chip and manufacturing method thereof
CN106441645A (en) * 2016-09-29 2017-02-22 中国科学院重庆绿色智能技术研究院 Graphene pressure sensor array system and preparation method thereof
CN108195492A (en) * 2018-01-19 2018-06-22 上海电力学院 Utilize the hypersensitive strain gauge of two-dimentional phase transformation material preparation

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