CN104596683A - Pressure sensor based on stratified materials and piezoelectric effect measuring system - Google Patents
Pressure sensor based on stratified materials and piezoelectric effect measuring system Download PDFInfo
- Publication number
- CN104596683A CN104596683A CN201510075426.8A CN201510075426A CN104596683A CN 104596683 A CN104596683 A CN 104596683A CN 201510075426 A CN201510075426 A CN 201510075426A CN 104596683 A CN104596683 A CN 104596683A
- Authority
- CN
- China
- Prior art keywords
- dimensional material
- layer
- material thin
- thin layer
- electrode layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 118
- 230000000694 effects Effects 0.000 title claims abstract description 33
- 238000009413 insulation Methods 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 30
- 239000013078 crystal Substances 0.000 claims description 24
- 239000010408 film Substances 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 16
- 229910021389 graphene Inorganic materials 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- -1 transition metal chalcogenide Chemical class 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052723 transition metal Inorganic materials 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 131
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 230000008859 change Effects 0.000 description 12
- 238000004590 computer program Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- JCLOGSKIMBJQAA-UHFFFAOYSA-N [Mo].[Sn] Chemical compound [Mo].[Sn] JCLOGSKIMBJQAA-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000011896 sensitive detection Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000105 evaporative light scattering detection Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical class [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Landscapes
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a pressure sensor based on stratified materials and a piezoelectric effect measuring system. The pressure sensor comprises an insulation layer, a two-dimensional material film layer and a metal electrode layer, wherein a groove is etched in the insulation layer, two ends of the two-dimensional material film layer cross the groove and are arranged on the insulation layer, and the intermediate part of the two-dimensional material film layer is suspended on the groove; under the action of pressure of the two-dimensional material film layer, the distance between various atom layers and atoms in the atom layers in the two-dimensional material film layer changes, so that resistance of the two-dimensional material film layer changes; the metal electrode layer comprises a source electrode layer and a drain electrode layer, wherein the source electrode layer is arranged on the insulation layer on one side of the groove and covers one end of the two-dimensional material film layer; the drain electrode layer is arranged on the insulation layer on the other side of the groove and covers the other end of the two-dimensional material film layer. Compared with conventional piezoelectric elements, the pressure sensor is small in size and high in flexibility.
Description
Technical field
The invention relates to pressure sensor technique, particularly about a kind of pressure transducer based on stratified material and piezoelectric effect measuring system.
Background technology
Pressure transducer is widely used at the everyway of daily life and science and technology.As a kind of sensor, external force can be transformed into electricity by it, optics, the amount that displacement etc. are different, and then is used for the size of detection power.But the pressure transducer majority be most widely used is the size and Orientation detecting external force by electrical quantities.Such as, piezoelectric transducer detects the size of external force by measuring dielectric due to surface charge that piezoelectric effect produces; Semiconductor pressure resistance type sensor utilizes semiconductor resistor with the principle of change of shape, can be calculated the size of external force by semi-conductor electricity resistance; Capacitance-type sensor converts the change being made the movable pole of electric capacity be out of shape the electric capacity produced by external force to electric signal, thus detects external force situation by electric signal.But, along with the development of science and technology and the needs of all sectors of society development, under pressure transducer is required to be used in various extreme environment, be such as applied in the fields such as air pressure detection, molecular mass detection.Along with improving constantly pressure transducer performance requirement, traditional pressure transducer has been not enough to reply.Under this background, the appearance of two-dimensional layer material, the new dawn to art of pressure sensors band.For Graphene, this emerging Two-dimensional Carbon atom film, shows the physical strength far above current material and electric property.Again because the electromechanical coupling characteristics of its excellence, the piezoelectric transducer based on two-dimensional material represents huge potentiality.
Piezoelectric transducer is the pressure transducer utilizing the piezoelectric effect of some piezoelectric to manufacture.These piezoelectrics comprise piezoelectric monocrystal (quartz crystal), piezoelectric ceramics (barium titanate ceramics, lead zirconate titanate series ceramic) and organic piezoelectric materials (polyvinylidene fluoride) etc.The common feature of these piezoelectrics is, when they are under pressure along certain direction and are out of shape, can produce polarization, and then make electric charge contrary with symbol on their two relative surfaces at material internal.After external force removes, they return to again original shape and uncharged state.
When two apparent surfaces of piezoelectric converge the charges of different polarity, two surfaces can present certain voltage, and the size of voltage is proportional to the size of surface charge amount.In general, piezoelectric transducer mainly make use of the longitudinal piezoelectric effect of piezoelectric, and stressed rear the produced quantity of electric charge of piezoelectric and suffered external force size are directly proportional.Therefore piezoelectric transducer is the size being provided effect external force on a sensor by the voltage measured between piezoelectric two surfaces.
Piezoelectric effect is the main operational principle of piezoelectric transducer, under the external force of alternation, constantly have new electric charge to be supplemented, can supply certain electric current for metering circuit, therefore piezoelectric transducer reasonablely can do kinetic measurement in piezoelectric element.And under constant external force, because measuring circuit can not have infinitely-great input impedance, so the electric charge on piezoelectric element surface is easy to reveal, therefore piezoelectric transducer be not suitable for static pressure survey.
Owing to make use of piezoelectric effect principle, the electric charge being present in piezoelectric material surface is easily revealed, so this kind of sensor is not suitable for the detection of constant force size.And piezoelectric can not detect very faint power, so this sensor can not be applied to highly sensitive pressure detector field.
Piezoresistive transducer refers to the sensor utilizing the piezoresistive effect of single crystal silicon material and integrated circuit technique to make.Single crystal silicon material is after the effect being subject to power, and resistivity changes, and the electric signal that just can obtain being proportional to power change by metering circuit exports.Piezoresistive transducer is used for pressure, pulling force, pressure differential and can changes the measurement of other physical quantitys (as liquid level, acceleration, weight, strain, flow, vacuum tightness) of change and the control of power into.
When masterpiece is used for silicon crystal, the lattice of crystal produces distortion, makes charge carrier from an energy valley to another energy valley scattering, causes the mobility of charge carrier to change, the disturbance average magnitude of charge carrier vertical and horizontal, thus the resistivity of silicon is changed.This sensor adopts integrated technique to be integrated on monocrystalline silicon diaphragm by resistor stripe, makes silicon pressure drag chip, and is fixedly packaged within shell by the periphery of this chip, and extraction electrode goes between.Piezoresistive transducer is also called solid state pressure sensor, and it is different from bended strain ga(u)ge need experience external force indirectly by elastic sensing element, but directly by silicon diaphragm impression by measuring pressure.
But there is following shortcoming in piezoresistive transducer: temperature affects comparatively large (sometimes needing to carry out temperature compensation), signal to noise ratio (S/N ratio) is not high, technique is more complicated and high cost.
Summary of the invention
The embodiment of the present invention provides a kind of pressure transducer based on stratified material and piezoelectric effect measuring system, to reduce the volume of sensor, and provides sensitivity.
To achieve these goals, the embodiment of the present invention provides a kind of pressure transducer based on stratified material, and described pressure transducer comprises:
Insulation course, described insulation course is etched with a raceway groove;
Two-dimensional material thin layer, the two ends of described two-dimensional material thin layer are arranged on described insulation course across described raceway groove, and the center section of described two-dimensional material thin layer is suspended on described raceway groove; Under the pressure effect perpendicular to described two-dimensional material thin layer, in the spacing in described two-dimensional material thin layer between each atomic layer and each atomic layer, interatomic spacing changes, and the resistance of described two-dimensional material thin layer is changed;
Metal electrode layer, comprises source electrode layer and drain electrode layer, and described source electrode layer is arranged on the described insulation course of described raceway groove side, and covers on one end of described two-dimensional material thin layer; Described drain electrode layer is arranged on the described insulation course of described raceway groove opposite side, and covers on the other end of described two-dimensional material thin layer.
In one embodiment, described pressure transducer also comprises: substrate, is arranged on below described insulation course.
In one embodiment, described two-dimensional material thin layer is graphene film crystal or transition metal chalcogenide, as molybdenum sulfide, tin molybdenum etc.
In one embodiment, described insulation course is the insulating material such as silicon dioxide or PMMA.
In one embodiment, the width of described raceway groove is 3 microns.
In one embodiment, the thickness of described insulation course is 300 nanometers.
In one embodiment, the degree of depth of described raceway groove is 250 nanometers.
In one embodiment, described source electrode layer is made up of the thick titanium of 5nm and the thick gold of 50nm.
In one embodiment, described drain electrode layer is made up of the thick titanium of 5nm and the thick gold of 50nm.
To achieve these goals, the embodiment of the present invention provides a kind of pressure transducer based on stratified material, and described pressure transducer comprises:
Elastic substrate;
Two-dimensional material thin layer, described two-dimensional material thin layer is laid in the surface of described elastic substrate; Under the pressure effect perpendicular to described two-dimensional material thin-film surface, in the spacing in described two-dimensional material thin layer between each atomic layer and each atomic layer, interatomic spacing changes, and the resistance of described two-dimensional material thin layer is changed;
Metal electrode layer, comprises source electrode layer and drain electrode layer, and institute's source electrode layer is crimped on one end of described two-dimensional material thin layer, the other end being crimped on described two-dimensional material thin layer of described drain electrode layer and described source electrode layer symmetry.
To achieve these goals, the embodiment of the present invention provides a kind of piezoelectric effect measuring system, and described piezoelectric effect measuring system comprises: pressure transducer, atomic force microscope, voltage source and reometer, wherein,
Described source electrode layer connects the negative pole of described voltage source and ground connection, and the positive pole of described voltage source connects described drain electrode layer by reometer;
In imaging process, the needle point of described atomic force microscope contacts described two-dimensional material thin layer and applies pressure, described two-dimensional material thin layer is stretched, in spacing in described two-dimensional material thin layer between each atomic layer and each atomic layer, interatomic spacing changes, the resistance of described two-dimensional material thin layer is changed, utilize described voltage source and reometer, measured the resistance sizes of graphene film crystal by the metal electrode layer on described two-dimensional material thin layer.
Pressure transducer of the present invention is different from traditional sensor.First, sensor of the present invention, using two-dimensional material layer as piezoelectric element, is different from traditional piezoelectric elements, and it is very little that this pressure transducer can do.Secondly, it is a kind of electromechanical property of material intrinsic that the electrical resistance pressure of two-dimensional material layer changes, and the piezoelectric effect of piezoelectric transducer is completely different.Finally, two-dimensional material layer can detect very weak power, and provides clear and definite change in electric, and this makes pressure sensor application of the present invention become possibility in needing the field of highly sensitive detection performance.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the front elevation of the pressure transducer based on stratified material of one embodiment of the invention;
Fig. 2 is the vertical view of the pressure transducer based on stratified material of one embodiment of the invention;
Fig. 3 is the left view of the pressure transducer based on stratified material of one embodiment of the invention;
Fig. 4 is the front elevation of the pressure transducer based on stratified material of another embodiment of the present invention;
Fig. 5 is the front elevation of the pressure transducer based on stratified material of yet another embodiment of the invention;
The change trend schematic diagram of two-dimensional material thin layer crystal structure under stressed effect has been shown in Fig. 6;
Fig. 7 is the structural representation of the piezoelectric effect measuring system of the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
As shown in Figure 1, Figure 2 and Figure 3, embodiments provide a kind of pressure transducer based on stratified material, described pressure transducer comprises: insulation course 2, metal electrode layer and two-dimensional material thin layer 4.
Insulation course 2 is etched with a raceway groove 5.The two ends of two-dimensional material thin layer 4 are arranged on insulation course across raceway groove 5, and the center section 43 of two-dimensional material thin layer is suspended on described raceway groove.Label 41 and 42 in Fig. 1 is the two ends of two-dimensional material thin layer 4, and end 41 is sticked on the upper surface 21 of insulation course 2, and end 42 is sticked on the upper surface 22 of insulation course 2.
Metal electrode layer comprises source electrode layer 31 and drain electrode layer 32, and source electrode layer 31 is arranged on the described insulation course 2 of raceway groove 5 side and (is namely positioned on upper surface 21), and covers on one end 41 of two-dimensional material thin layer 4; Drain electrode layer 32 is arranged on the insulation course 2 of raceway groove 5 opposite side and (is namely positioned on upper surface 22), and covers on the other end 42 of two-dimensional material thin layer 4.
From Fig. 1 to Fig. 3, the width of two-dimensional material thin layer 4 is much smaller than the length of raceway groove 5, and two-dimensional material thin layer 4 enters to be suspended in the top of part raceway groove 5.
In one embodiment, source electrode layer and drain electrode layer, by the thick titanium of 5nm and the thick gold composition of 50nm, are not intended to limit.
In one embodiment as shown in Figure 4, pressure transducer also comprises: substrate 1, and this substrate 1 is arranged on below insulation course 2, and substrate 1 can be the Ins. ulative material such as silicon, and the present invention is only described for silicon.
Two-dimensional material thin layer 4 is that the core of pressure transducer of the present invention can to change inside this two-dimensional material crystal interatomic spacing in spacing between layers and layer by pressure, by the distortion of this crystal structure, the object changing material resistance can be reached, namely change piezoelectric properties.When utilizing this pressure transducer detected pressures, the pressure that two-dimensional material thin layer will be subject to perpendicular to layer surface, perpendicular under the pressure effect of two-dimensional material thin layer, in spacing in two-dimensional material thin layer between each atomic layer and each atomic layer, interatomic spacing changes, the resistance of described two-dimensional material thin layer is changed, and then detection obtain force value.
Two-dimensional material thin layer in pressure transducer of the present invention can be graphene film crystal or transition metal chalcogenide, and transition metal chalcogenide can be molybdenum sulfide and tin molybdenum etc., and the present invention, only with graphene film crystal, is not intended to limit.
Insulation course 2 in pressure transducer of the present invention can insulating material and dielectric material, and insulating material is such as silicon dioxide layer or PMMA layer etc., and the present invention is only described using silicon dioxide layer as insulation course.
In one embodiment, the thickness of insulation course 2 is 300 nanometers, and the width of raceway groove is 3 microns, and the degree of depth of raceway groove is 250 nanometers, and the present invention is not as limit.
The manufacturing process of the pressure transducer of Fig. 1 to Fig. 4 is simply introduced below in conjunction with concrete example.
The manufacturing process of raceway groove is as follows: for silicon dioxide layer as insulation course, and silicon is as the situation of substrate, and silicon dioxide layer and silicon base are collectively referred to as oxidized silicon chip.During concrete making, getting oxidized silicon chip a slice, is silicon layer below oxidized silicon chip, and the above is the silicon dioxide layer of 300nm.At oxidized silicon chip surface spin coating one deck photoresist, and dry on hot plate.Do mask with the photolithography plate with 3 microns of wide raceway grooves, expose under ultraviolet light.Oxidized silicon chip is immersed in developer solution and stop bath do development and fixing, can see that series of parallel raceway groove striped appears in silicon chip surface, the photoresist that striped represents channel part is developed.The silicon chip developed is put in plasma etching system and is etched, and the channel part silicon dioxide layer degree of depth that is etched is 250nm, then falls the photoresist of silicon chip surface with plasma oxygen air purge, completes the making of raceway groove.
The preparation method of deflocculated graphite alkene film crystal:
1) mechanical stripping method: mechanical stripping graphene film on the oxidized silicon chip after processing, and search out under an optical microscope and be suspended in completely on raceway groove and the thinner graphene film crystal of the number of plies.
2) CVD growth method: the graphene film crystal increased by CVD, is then transferred on raceway groove, obtains deflocculated graphite alkene film crystal.
Can also before raceway groove makes except the preparation method of above-mentioned two kinds of deflocculated graphite alkene film crystals, first the graphene film crystal made by mechanical stripping method or CVD growth method is placed on the position corresponding with above-mentioned raceway groove, then on the position corresponding with above-mentioned raceway groove, plates source electrode layer and drain electrode layer.After completing above operation, the sample made is immersed in hydrofluorite, the silicon dioxide etching not under metal electrode layer protection is fallen, under graphene film crystal, defines raceway groove.
Metal electrode layer is made: the graphene film crystal finding ad-hoc location by mask method evaporation, graphene film crystal is aimed at the mask plate made in advance, oxidized silicon chip is put in electron beam evaporation plating system together with mask plate, the titanium that hydatogenesis 5nm is thick in electron beam evaporation plating system and the thick gold of 50nm, metal electrode layer.This mask method evaporation metal electrode layer, similarly opens several hole on a film, by film cover on a slice, thin piece, at a little paint of surface spray, after film is taken off, and the shape in hole before slice, thin piece can stay, and coated paint above.
As described in Figure 5, the embodiment of the present invention additionally provides a kind of pressure transducer based on stratified material, and described pressure transducer comprises: elastic substrate 51, two-dimensional material thin layer 52 and metal electrode layer.
Two-dimensional material thin layer 52 is laid in the surface of elastic substrate 51.Metal electrode layer comprises source electrode 53 layers and drain electrode layer 54, and source electrode layer 53 is crimped on one end 55 of two-dimensional material thin layer 52, the other end 56 being crimped on described two-dimensional material thin layer 52 of drain electrode layer 54 and source electrode layer 53 symmetry.
The principle of work of this pressure transducer is, under the pressure effect perpendicular to described two-dimensional material thin-film surface, in spacing in two-dimensional material thin layer 52 between each atomic layer and each atomic layer, interatomic spacing changes, the resistance of two-dimensional material thin layer 52 is changed, and then detection obtain force value.
In order to the principle of work of pressure transducer of the present invention is better described, the change situation of the two-dimensional material thin layer crystal structure of the pressure transducer of Fig. 1 to Fig. 5 under stressed effect has been shown in Fig. 6, can obviously be found out by Fig. 6, after applying the pressure of vertical xy plane, in two-dimensional material thin layer, the distance of each interlayer reduces, and becomes γ ' from γ.In layer, the structure of hexagonal lattice there occurs distortion, and the length perpendicular to the direction hexagonal lattice of raceway groove in plane is elongated, and becomes t ' from t.
As shown in Figure 7, the embodiment of the present invention provides a kind of piezoelectric effect measuring system, and this piezoelectric effect measuring system comprises: pressure transducer, atomic force microscope (illustrate only the tip portion 709 of atomic force microscope in figure), voltage source 707 and reometer 708.
Pressure transducer comprises: insulation course 701, two-dimensional material thin layer 702, metal electrode layer and substrate 704.
Insulation course 701 is etched with a raceway groove 705.The two ends of two-dimensional material thin layer 702 are arranged on insulation course 701 across raceway groove 705, and the center section of two-dimensional material thin layer 702 is suspended on raceway groove 705.
Metal electrode layer comprises source electrode layer 703 and drain electrode layer 706, source electrode layer 703 is arranged on the insulation course of raceway groove 705 side, and on the one end covering two-dimensional material thin layer, drain electrode layer 705 is arranged on the insulation course of raceway groove 705 opposite side, and cover on the other end of two-dimensional material thin layer 702.
Source electrode layer 703 connects the negative pole of voltage source 707 and ground connection, and the positive pole of voltage source 707 connects drain electrode layer 706 by reometer 708.
Piezoelectric effect measuring system in Fig. 7 is only described with the pressure transducer shown in Fig. 1 to Fig. 4, this piezoelectric effect measuring system also can use the pressure transducer shown in Fig. 5, its principle of work is identical with adopting the principle of work of the pressure transducer shown in Fig. 1 to Fig. 4, does not repeat them here.
The detailed construction of pressure transducer with describe in Fig. 1 to Fig. 3 identical, refer to the description of Fig. 1 to Fig. 3 and above-mentioned correspondence, repeat no more.
In imaging process, the needle point 709 of atomic force microscope contacts two-dimensional material thin layer 702 and applies pressure, two-dimensional material thin layer 702 is stretched along a direction, in spacing in two-dimensional material thin layer 702 between each atomic layer and each atomic layer, interatomic spacing changes, the resistance of two-dimensional material thin layer 702 is changed, specifically refers to Fig. 5 and corresponding text description.Two other direction is compressed (poisson effect).Utilize voltage source 707 and reometer 708, the resistance sizes of graphene film crystal can be measured by the metal electrode layer on two-dimensional material thin layer 702.The present invention passes through by two-dimensional graphene film crystal mechanical stripping in substrate, and plates electrode, by detecting the electrical signal of pressure transducer with the variation relation of pressure, demonstrates the excellent properties of this two-dimensional layer material pressure transducer.
Pressure transducer of the present invention is different from traditional sensor.First, sensor of the present invention, using two-dimensional material layer as piezoelectric element, is different from traditional piezoelectric elements, and it is very little that this pressure transducer can do.Secondly, it is a kind of electromechanical property of material intrinsic that the electrical resistance pressure of two-dimensional material layer changes, and the piezoelectric effect of piezoelectric transducer is completely different.Finally, two-dimensional material layer can detect very weak power, and provides clear and definite change in electric, and this makes pressure sensor application of the present invention become possibility in needing the field of highly sensitive detection performance.
Those skilled in the art should understand, embodiments of the invention can be provided as method, system or computer program.Therefore, the present invention can adopt the form of complete hardware embodiment, completely software implementation or the embodiment in conjunction with software and hardware aspect.And the present invention can adopt in one or more form wherein including the upper computer program implemented of computer-usable storage medium (including but not limited to magnetic disk memory, CD-ROM, optical memory etc.) of computer usable program code.
The present invention describes with reference to according to the process flow diagram of the method for the embodiment of the present invention, equipment (system) and computer program and/or block scheme.Should understand can by the combination of the flow process in each flow process in computer program instructions realization flow figure and/or block scheme and/or square frame and process flow diagram and/or block scheme and/or square frame.These computer program instructions can being provided to the processor of multi-purpose computer, special purpose computer, Embedded Processor or other programmable data processing device to produce a machine, making the instruction performed by the processor of computing machine or other programmable data processing device produce device for realizing the function of specifying in process flow diagram flow process or multiple flow process and/or block scheme square frame or multiple square frame.
These computer program instructions also can be stored in can in the computer-readable memory that works in a specific way of vectoring computer or other programmable data processing device, the instruction making to be stored in this computer-readable memory produces the manufacture comprising command device, and this command device realizes the function of specifying in process flow diagram flow process or multiple flow process and/or block scheme square frame or multiple square frame.
These computer program instructions also can be loaded in computing machine or other programmable data processing device, make on computing machine or other programmable devices, to perform sequence of operations step to produce computer implemented process, thus the instruction performed on computing machine or other programmable devices is provided for the step realizing the function of specifying in process flow diagram flow process or multiple flow process and/or block scheme square frame or multiple square frame.
Apply specific embodiment in the present invention to set forth principle of the present invention and embodiment, the explanation of above embodiment just understands method of the present invention and core concept thereof for helping; Meanwhile, for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.
Claims (10)
1. based on a pressure transducer for stratified material, it is characterized in that, described pressure transducer comprises:
Insulation course, described insulation course is etched with a raceway groove;
Two-dimensional material thin layer, the two ends of described two-dimensional material thin layer are arranged on described insulation course across described raceway groove, and the center section of described two-dimensional material thin layer is suspended on described raceway groove; Under the pressure effect perpendicular to described two-dimensional material thin layer, in the spacing in described two-dimensional material thin layer between each atomic layer and each atomic layer, interatomic spacing changes, and the resistance of described two-dimensional material thin layer is changed;
Metal electrode layer, comprises source electrode layer and drain electrode layer, and described source electrode layer is arranged on the described insulation course of described raceway groove side, and covers on one end of described two-dimensional material thin layer; Described drain electrode layer is arranged on the described insulation course of described raceway groove opposite side, and covers on the other end of described two-dimensional material thin layer.
2. pressure transducer according to claim 1, is characterized in that, described pressure transducer also comprises: substrate, is arranged on below described insulation course.
3. pressure transducer according to claim 2, is characterized in that, described two-dimensional material thin layer is graphene film crystal or transition metal chalcogenide.
4. pressure transducer according to claim 3, is characterized in that, described insulation course is silicon dioxide or PMMA.
5. pressure transducer according to any one of claim 1 to 4, is characterized in that, the width of described raceway groove is 3 microns.
6. pressure transducer according to any one of claim 1 to 4, is characterized in that, the thickness of described insulation course is 300 nanometers.
7. pressure transducer according to any one of claim 1 to 4, is characterized in that, the degree of depth of described raceway groove is 250 nanometers.
8. pressure transducer according to any one of claim 1 to 4, is characterized in that, described source electrode layer is made up of the thick titanium of 5nm and the thick gold of 50nm, and described drain electrode layer is made up of the thick titanium of 5nm and the thick gold of 50nm.
9. based on a pressure transducer for stratified material, it is characterized in that, described pressure transducer comprises:
Elastic substrate;
Two-dimensional material thin layer, described two-dimensional material thin layer is laid in the surface of described elastic substrate; Under the pressure effect perpendicular to described two-dimensional material thin-film surface, in the spacing in described two-dimensional material thin layer between each atomic layer and each atomic layer, interatomic spacing changes, and the resistance of described two-dimensional material thin layer is changed;
Metal electrode layer, comprises source electrode layer and drain electrode layer, and institute's source electrode layer is crimped on one end of described two-dimensional material thin layer, the other end being crimped on described two-dimensional material thin layer of described drain electrode layer and described source electrode layer symmetry.
10. a piezoelectric effect measuring system, is characterized in that, described piezoelectric effect measuring system comprises: the pressure transducer described in claim 1 or 9, atomic force microscope, voltage source and reometer, wherein,
Described source electrode layer connects the negative pole of described voltage source and ground connection, and the positive pole of described voltage source connects described drain electrode layer by reometer;
In imaging process, the needle point of described atomic force microscope contacts described two-dimensional material thin layer and applies pressure, described two-dimensional material thin layer is stretched, in spacing in described two-dimensional material thin layer between each atomic layer and each atomic layer, interatomic spacing changes, the resistance of described two-dimensional material thin layer is changed, utilize described voltage source and reometer, measured the resistance sizes of graphene film crystal by the metal electrode layer on described two-dimensional material thin layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510075426.8A CN104596683A (en) | 2015-02-12 | 2015-02-12 | Pressure sensor based on stratified materials and piezoelectric effect measuring system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510075426.8A CN104596683A (en) | 2015-02-12 | 2015-02-12 | Pressure sensor based on stratified materials and piezoelectric effect measuring system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104596683A true CN104596683A (en) | 2015-05-06 |
Family
ID=53122609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510075426.8A Pending CN104596683A (en) | 2015-02-12 | 2015-02-12 | Pressure sensor based on stratified materials and piezoelectric effect measuring system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104596683A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107764466A (en) * | 2017-11-17 | 2018-03-06 | 清华大学 | A kind of pressure resistance type vacuum meter based on graphene and preparation method thereof |
| CN108195492A (en) * | 2018-01-19 | 2018-06-22 | 上海电力学院 | Utilize the hypersensitive strain gauge of two-dimentional phase transformation material preparation |
| CN108675259A (en) * | 2018-05-18 | 2018-10-19 | 中国电子科技集团公司第十三研究所 | Pressure sensor |
| CN108931323A (en) * | 2018-05-03 | 2018-12-04 | 复旦大学 | A kind of electret body transistor force snesor and preparation method thereof |
| CN109188732A (en) * | 2018-10-24 | 2019-01-11 | 深圳大学 | A kind of ultrafast pulse compressibility and preparation method |
| WO2019093773A1 (en) * | 2017-11-09 | 2019-05-16 | (주)아모레퍼시픽 | Deformation sensor unit and skin sensor module comprising same |
| WO2020062215A1 (en) * | 2018-09-30 | 2020-04-02 | 深圳大学 | Stress detection device and stress detection matrix system |
| WO2020082254A1 (en) * | 2018-10-24 | 2020-04-30 | 深圳大学 | Ultrafast pulse compression system and preparation method |
| CN111422861A (en) * | 2020-05-08 | 2020-07-17 | 西安交通大学 | Preparation method of suspended graphene film structure |
| CN111655123A (en) * | 2017-11-09 | 2020-09-11 | 株式会社爱茉莉太平洋 | Strain sensor unit and skin sensor module comprising same |
| CN111693201A (en) * | 2020-06-11 | 2020-09-22 | 南方科技大学 | Tunneling type MEMS (micro-electromechanical system) air pressure sensor and application thereof |
| WO2024087110A1 (en) * | 2022-10-27 | 2024-05-02 | Yangtze Advanced Memory Industrial Innovation Center Co., Ltd | Microelectromechanical system pressure sensor with pressure sensing element having phase-change material |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102564657A (en) * | 2012-01-16 | 2012-07-11 | 江苏物联网研究发展中心 | Graphene-based array type flexible pressure distribution sensor and preparation method thereof |
| KR20120095076A (en) * | 2011-02-18 | 2012-08-28 | 성균관대학교산학협력단 | Sensing method of pressure using graphene device and graphene device used therein |
| CN103234670A (en) * | 2013-04-16 | 2013-08-07 | 宁波工程学院 | High-sensitivity SiC pressure sensor |
| CN103378082A (en) * | 2012-04-12 | 2013-10-30 | 国际商业机器公司 | Graphene pressure sensors |
| CN203629725U (en) * | 2013-12-21 | 2014-06-04 | 华中科技大学 | MEMS pressure sensor based on graphene |
-
2015
- 2015-02-12 CN CN201510075426.8A patent/CN104596683A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120095076A (en) * | 2011-02-18 | 2012-08-28 | 성균관대학교산학협력단 | Sensing method of pressure using graphene device and graphene device used therein |
| CN102564657A (en) * | 2012-01-16 | 2012-07-11 | 江苏物联网研究发展中心 | Graphene-based array type flexible pressure distribution sensor and preparation method thereof |
| CN103378082A (en) * | 2012-04-12 | 2013-10-30 | 国际商业机器公司 | Graphene pressure sensors |
| CN103234670A (en) * | 2013-04-16 | 2013-08-07 | 宁波工程学院 | High-sensitivity SiC pressure sensor |
| CN203629725U (en) * | 2013-12-21 | 2014-06-04 | 华中科技大学 | MEMS pressure sensor based on graphene |
Non-Patent Citations (1)
| Title |
|---|
| 蒋圣伟等: "一种悬浮石墨烯压力传感器的制造与建模", 《传感器与微系统》 * |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019093773A1 (en) * | 2017-11-09 | 2019-05-16 | (주)아모레퍼시픽 | Deformation sensor unit and skin sensor module comprising same |
| CN111655123A (en) * | 2017-11-09 | 2020-09-11 | 株式会社爱茉莉太平洋 | Strain sensor unit and skin sensor module comprising same |
| CN107764466A (en) * | 2017-11-17 | 2018-03-06 | 清华大学 | A kind of pressure resistance type vacuum meter based on graphene and preparation method thereof |
| CN108195492A (en) * | 2018-01-19 | 2018-06-22 | 上海电力学院 | Utilize the hypersensitive strain gauge of two-dimentional phase transformation material preparation |
| CN108931323A (en) * | 2018-05-03 | 2018-12-04 | 复旦大学 | A kind of electret body transistor force snesor and preparation method thereof |
| CN108675259A (en) * | 2018-05-18 | 2018-10-19 | 中国电子科技集团公司第十三研究所 | Pressure sensor |
| WO2020062215A1 (en) * | 2018-09-30 | 2020-04-02 | 深圳大学 | Stress detection device and stress detection matrix system |
| CN109188732A (en) * | 2018-10-24 | 2019-01-11 | 深圳大学 | A kind of ultrafast pulse compressibility and preparation method |
| WO2020082254A1 (en) * | 2018-10-24 | 2020-04-30 | 深圳大学 | Ultrafast pulse compression system and preparation method |
| CN111422861A (en) * | 2020-05-08 | 2020-07-17 | 西安交通大学 | Preparation method of suspended graphene film structure |
| CN111693201A (en) * | 2020-06-11 | 2020-09-22 | 南方科技大学 | Tunneling type MEMS (micro-electromechanical system) air pressure sensor and application thereof |
| WO2024087110A1 (en) * | 2022-10-27 | 2024-05-02 | Yangtze Advanced Memory Industrial Innovation Center Co., Ltd | Microelectromechanical system pressure sensor with pressure sensing element having phase-change material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104596683A (en) | Pressure sensor based on stratified materials and piezoelectric effect measuring system | |
| Yao et al. | Bioinspired triboelectric nanogenerators as self‐powered electronic skin for robotic tactile sensing | |
| Kang et al. | Highly sensitive pressure sensor based on bioinspired porous structure for real‐time tactile sensing | |
| WO2021147454A1 (en) | Flexible capacitive tactile sensor, preparation method therefor, and tactile sensing system | |
| JP6008970B2 (en) | Piezoelectric pressure sensor | |
| US20130037780A1 (en) | Apparatus and Associated Methods | |
| KR20160107453A (en) | Multimodal sensor and manufacturing method thereof | |
| CN107966481B (en) | A kind of Material Identification sensor and preparation method thereof based on composite capacitive structure | |
| KR101691910B1 (en) | Strain Sensor and Manufacturing Method of The Same | |
| Lang et al. | Piezoresistive properties of PEDOT: PSS | |
| JP6586094B2 (en) | Graphene magnetoresistive sensor | |
| CN103791927A (en) | Self-drive displacement and velocity sensing method, sensor and manufacture method of sensor | |
| CN109297622B (en) | Miniature piezoresistive stress sensor based on tungsten diselenide | |
| WO2019101133A1 (en) | Detection apparatus, fabrication method thereof, array substrate, and display apparatus | |
| CN107389256B (en) | Electronic device for detecting pressure | |
| KR20200087512A (en) | Paper-based strain sensor and its manufacturing method | |
| KR102045220B1 (en) | Strain sensing device, sensor array using the same and preparation method thereof | |
| Guo et al. | A flexible and high temperature tolerant strain sensor of La0. 7Sr0. 3MnO3/Mica | |
| CN113405700A (en) | Large-area film pressure sensor | |
| Mo et al. | Spatiotemporal Modulation of Plasticity in Multi‐Terminal Tactile Synaptic Transistor | |
| Yu et al. | Capacitive stretchable strain sensor with low hysteresis based on wavy-shape interdigitated metal electrodes | |
| TWI824002B (en) | Organic semiconductor components, deformation sensors, vibration sensors and manufacturing methods of organic semiconductor components | |
| JP6678992B2 (en) | Pressure sensor | |
| CN104020313B (en) | A kind of all-metal capacitor plate micro-acceleration sensor | |
| US11614377B2 (en) | Transparent and highly sensitive pressure sensor with improved linearity and pressure sensitivity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150506 |
|
| WD01 | Invention patent application deemed withdrawn after publication |