CN108931323A - A kind of electret body transistor force snesor and preparation method thereof - Google Patents
A kind of electret body transistor force snesor and preparation method thereof Download PDFInfo
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- CN108931323A CN108931323A CN201810413515.2A CN201810413515A CN108931323A CN 108931323 A CN108931323 A CN 108931323A CN 201810413515 A CN201810413515 A CN 201810413515A CN 108931323 A CN108931323 A CN 108931323A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 34
- 230000003068 static effect Effects 0.000 claims abstract description 23
- 238000012544 monitoring process Methods 0.000 claims abstract description 21
- 238000005516 engineering process Methods 0.000 claims abstract description 6
- 238000001514 detection method Methods 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 25
- 239000011888 foil Substances 0.000 claims description 17
- 239000010408 film Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 230000010287 polarization Effects 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 210000004508 polar body Anatomy 0.000 claims description 4
- 238000001771 vacuum deposition Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000002322 conducting polymer Substances 0.000 claims description 2
- 229920001940 conductive polymer Polymers 0.000 claims description 2
- 239000006260 foam Substances 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052752 metalloid Inorganic materials 0.000 claims 1
- 150000002738 metalloids Chemical class 0.000 claims 1
- 239000002861 polymer material Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 239000003990 capacitor Substances 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 239000004743 Polypropylene Substances 0.000 description 16
- -1 polypropylene Polymers 0.000 description 16
- 229920001155 polypropylene Polymers 0.000 description 16
- FMZQNTNMBORAJM-UHFFFAOYSA-N tri(propan-2-yl)-[2-[13-[2-tri(propan-2-yl)silylethynyl]pentacen-6-yl]ethynyl]silane Chemical compound C1=CC=C2C=C3C(C#C[Si](C(C)C)(C(C)C)C(C)C)=C(C=C4C(C=CC=C4)=C4)C4=C(C#C[Si](C(C)C)(C(C)C)C(C)C)C3=CC2=C1 FMZQNTNMBORAJM-UHFFFAOYSA-N 0.000 description 6
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 5
- 238000002207 thermal evaporation Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005187 foaming Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000003857 carboxamides Chemical class 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 208000002173 dizziness Diseases 0.000 description 1
- 238000001548 drop coating Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 210000003739 neck Anatomy 0.000 description 1
- 125000005582 pentacene group Chemical group 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C69/00—Combinations of shaping techniques not provided for in a single one of main groups B29C39/00 - B29C67/00, e.g. associations of moulding and joining techniques; Apparatus therefore
- B29C69/02—Combinations of shaping techniques not provided for in a single one of main groups B29C39/00 - B29C67/00, e.g. associations of moulding and joining techniques; Apparatus therefore of moulding techniques only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention belongs to field of sensing technologies, specially a kind of electret body transistor force snesor and preparation method thereof for having dynamic and static force monitoring function concurrently.Electret body transistor force snesor of the invention is made of electret, semiconductor material, and electret deformation under external force leads to the change of polarized state, to further result in the change of source-drain current；By the detection to source-drain current, the monitoring to static force and dynamic force is realized.The present invention solves the problems, such as that usual piezo-electric electret capacitor is difficult to realize the monitoring of (standard) static force；Preparation method is simple, high sensitivity, can be widely applied to it is all kinds of have power monitor/detect in the field of demand.
Description
Technical field
The invention belongs to field of sensing technologies, and in particular to a kind of electret body transistor force snesor and preparation method thereof.
Background technique
Electret is the material for referring to standby storage space charge or dipole charge.According to the electrically charged classification of electret institute
Intrinsic electret and manual electret can be divided into, the former the local net charge of institute's band is that material polarity unit itself is orientated in the electric field
And the polarization charge formed；And the charge of the latter is generated or is an externally injected under the effect of outer field excitation.Inventionbroadly, it stays
Polar body includes the piezoelectric material of all kinds of intrinsic and artificial preparation.
Electret has piezoelectric property, can produce electric signal under external force, thus is widely used in preparing all kinds of
Force snesor.However, being mostly capacitance structure currently based on the force snesor of electret, it is only limitted to the monitoring to dynamic force, to quiet
The effect of state power is insensitive.
Summary of the invention
The object of the present invention is to provide a kind of electret body transistor force snesors for having dynamic and static force monitoring function concurrently
And preparation method thereof, to overcome electret itself to be in the prior art difficult to the monitoring of static or quasi-static pressure and deformation
The shortcomings that realization,
The electret body transistor force snesor provided by the invention for having dynamic and static force monitoring function concurrently, by foil electret and crystalline substance
Body pipe combines, and by the change of electric dipole density in caused film after foil electret stress and deformation, regulates and controls the source and drain of transistor
Electric conductivity, to realize the monitoring to static state/quasi-static force and dynamic force.
Specifically, electret body transistor force snesor is made of electret, semiconductor material, electret is in external force
Lower deformation is acted on, leads to the change of polarized state, to further result in the change of source-drain current；Pass through the inspection to source-drain current
It surveys, realizes the monitoring to static force and dynamic force.
In the present invention, the electret includes all kinds of intrinsic electrets and manual electret；Wherein, intrinsic electret
Body material includes：Piezo-electric crystal, piezoelectric ceramics, piezopolymer etc.；Manual electret's material includes：Material itself does not have pressure
Electrically, material internal is charged injection into via artificial note pole technique, to make all kinds of electrets of the material with piezoelectric effect.
In the present invention, the semiconductor material includes silicon semiconductor, oxide semiconductor, organic semiconductor, two dimension half
Conductor etc..
Electret body transistor force snesor preparation method provided by the invention, according to the difference of material therefor, electret layer
It is also adjusted therewith with the preparation process of semiconductor layer.
In the present invention, the electret is piezo-electric crystal and piezoelectric ceramics, and all kinds of vacuum depositions, chemical gaseous phase can be used
The preparation of the techniques such as deposition, physical vapour deposition (PVD) and liquid deposition.The electret is piezopolymer, and solution side can be used
Method preparation.The electret is manual electret, including all kinds of porous electrets, the preparation in hole then can be used foam process,
The preparation of the techniques such as micro-structure template.It must be through polarization process after the completion of foil electret preparation.Different semiconductor materials is selected different
Preparation process.Such as：Oxide semiconductor and organic semiconductor can be used that solution is related and the preparation of vacuum related process；Two dimension half
The preparation of the techniques such as mechanical stripping and chemical vapor deposition, molecular beam epitaxy can be used in conductor.
In the present invention, according to the difference of electret used and semiconductor material, the building of the electret force snesor
Mode is also slightly different.It can be independently of foil electret thicker existing for substrate, the electret if used electret is
It can be used as substrate layer simultaneously, without additional substrate, semiconductor material is deposited directly on foil electret.If electret used
Body and semiconductor equalizing are film, then need additional substrate layer.Substrate can be material all kinds of rigid or flexible.
In the present invention, source, drain electrode and the gate material of the transistor can be all kinds of metal materials, as gold, silver,
Aluminium etc.；It can also be conducting polymer materials, such as PEDOT:PSS etc. and the other kinds material that can be used as electrode.According to used
The preparation process of the difference of electrode material, electrode layer also adjusts accordingly.If all kinds of vacuum technology preparations can be used in metal electrode,
All kinds of solwution method preparations can be used in polymer electrode.
In the present invention, the device architecture of the electret body transistor force snesor can connect for top-gated top contact, top-gated bottom
Touching, the contact of bottom gate bottom or bottom gate top contact etc., according to the difference of semiconductor used and electret, select different device junctions
Structure and device preparation technology.Semiconductor layer can be deposited on electret layer, can also be conversely, electret layer is deposited on semiconductor layer
On.The electret layer being orientated for electric dipole, it may be unnecessary to gate electrode.
In the present invention, the external force is applied on electret piezotransistor with certain dynamic or static force, this
When, electret layer deformation leads to the change of polarized state, so as to cause the difference of semiconductor layer electric conductivity, via source-drain current
Measure the monitoring, it can be achieved that electret body transistor mechanical characteristic.
Electret body transistor force snesor of the invention solves usual piezo-electric electret capacitor and is difficult to realize (standard) static state
The problem of power monitors, preparation method is simple, high sensitivity, can be widely applied to all kinds of necks for monitoring/detecting demand with power
In domain.
Detailed description of the invention
Fig. 1 is the structural schematic diagram (by taking bottom gate top contact structure as an example) and external force of electret body transistor force snesor
Apply front and back electret deformation schematic diagram.Wherein, figure a is before external force applies, and figure b is after external force applies.External force causes to stay
The change of polar body layer polarization intensity, to modulate semiconductor layer source-drain current.
Fig. 2 is the transistor force snesor constructed based on the porous electret of linear polypropylene and pentacene organic semiconductor
Static force sensing function test result.Pressure values corresponding to every output characteristic curve are indicated in figure.
Fig. 3 is the transistor power sensing constructed based on the porous electret of linear polypropylene and TIPS pentacene organic semiconductor
The dynamic force sensing capabilities test result of device.
Specific embodiment
It is clear in order to be more clear the object, technical solutions and advantages of the present invention, below in conjunction with specific embodiment, to this
Invention is described in further details, and example described herein is only a part of the invention, rather than whole examples, together
When by example to explain the present invention, be not intended to limit the present invention.
Embodiment 1
The present embodiment illustrates the electret body transistor power based on the porous foil electret of polypropylene and pentacene organic semiconducting materials
The preparation method and its power sensing capabilities of sensor.
The preparation of the porous foil electret of polypropylene：Take 1 gram of linear polypropylene grain dissolution in 15 grams of N, N- dimethyl methyl
In organic amide solvent, homogeneous solution is formed, on a glass substrate by obtained polypropylene solution drop coating, and is dried in 70 DEG C of vacuum
Dry 8h obtains polypropylene screen in case.
The foaming of the porous foil electret of polypropylene is handled：Above-mentioned polypropylene screen is placed in high-pressure chamber, polypropylene screen is made
Filling high pressure gas in inner air vent, then high-pressure chamber explosive decompression to environment pressure, high pressure gas expansion in film generate in film
The bubble in some tens of pm aperture.
The polarization process of the porous foil electret of polypropylene：Corona polarizing processing, electricity are carried out to the porous foil electret of polypropylene
Dizzy electrode and sample surfaces spacing 7cm, corona voltage are -20KV, charging time 1min.Strong electrical field causes air in bubble to hit
It wears to form big electric dipole.
The vacuum deposition of pentacene semiconductor layer：Using vacuum thermal evaporation technique in the porous electret of polypropylene to have polarized
Film surface deposits pentacene organic semiconductor layer.In deposition process, silica crucible heating temperature is 265 DEG C, and thermal evaporation speed is 6
/ s, it is final to deposit pentacene film thickness 80nm.
Source-drain electrode preparation：Copper source drain electrode is deposited on pentacene film using vacuum thermal evaporation technique, forms transistor
Structure.Channel length 60um, width 0.5mm.The structure of final prepared electret body transistor is as shown in Figure 1a.
The test of electret body transistor force snesor static force sensing function：Apply the weight of different quality in transistor channel region
Object leads to foil electret deformation and the change of polarization intensity (as shown in Figure 1 b) to generate different pressure；By accurate source
Table, test transistor output characteristic curve with different pressure change.Typical test result is as shown in Figure 2 a.As it can be seen that with
Applied pressure increases to 6288Pa by 0Pa, and output characteristic curve is also in dull change, the source-drain current under 60V also by 4.8 ×
10-10It is down to 1.6 × 10-10A shows that the electret body transistor has static force sensing function.
Embodiment 2
The present embodiment illustrates the electret constructed jointly based on the porous foil electret of polypropylene and organic semiconductor TIPS pentacene
The preparation method and its dynamic force sensing capabilities of transistor force snesor.
It is consistent in preparation, foaming and the polarization process technique and embodiment 1 of the porous foil electret of polypropylene.
The vacuum deposition of TIPS pentacene semiconductor layer：It is stayed using vacuum thermal evaporation technique the polypropylene to have polarized is porous
Polar body film surface deposits TIPS pentacene organic semiconductor layer.In deposition process, silica crucible heating temperature is 252 DEG C, and heat is steamed
Hair speed is 7/s, final to deposit TIPS pentacene film thickness 70nm.
Source-drain electrode preparation：Copper source drain electrode is deposited on TIPS pentacene film using vacuum thermal evaporation technique, is formed brilliant
Body pipe structure.Channel length 60um, width 0.5mm.The structure of final prepared electret body transistor is also as shown in Figure 1a.
The test of electret body transistor force snesor dynamic force sensing function：It is applied in transistor channel region every the identical time
Add different dynamic pressures, generate different pressure, remove dynamic pressure rapidly later, causes foil electret deformation and polarization strong
The change of degree；By accurate source table, the variation of test transistor source-drain current during dynamic force applies and removes.Typically
Test results are shown in figure 3.As it can be seen that ought apply pressure every time, source-drain current is 5.0 × 10-9A to 1.0 × 10-8Become between A
Change；When removing pressure rapidly, due to the variation of polarization intensity in foil electret, -1.5 × 10 can be generated-9A to -3.5 × 10- 9The reversed source-drain current of A shows that the electret body transistor has dynamic force sensing function.
Claims (8)
1. a kind of electret body transistor force snesor for having dynamic and static force monitoring function concurrently, which is characterized in that by electret
Material, semiconductor material are constituted, and electret deformation under external force leads to the change of polarized state, to further result in
The change of source-drain current；By the detection to source-drain current, the monitoring to static force and dynamic force is realized.
2. the electret body transistor force snesor according to claim 1 for having dynamic and static force monitoring function concurrently, special
Sign is that used electret is selected from all kinds of intrinsic electrets and manual electret, wherein intrinsic electret packet
It includes：Piezo-electric crystal, piezoelectric ceramics or piezopolymer；Manual electret's material includes：Material itself does not have piezoelectricity, via
Artificial note pole technique charges injection into material internal, to make all kinds of electrets of the material with piezoelectric effect.
3. the electret body transistor force snesor according to claim 2 for having dynamic and static force monitoring function concurrently, special
Sign is that the semiconductor material is selected from silicon semiconductor, oxide semiconductor, organic semiconductor, two-dimensional semiconductor.
4. the electret body transistor force snesor according to claim 3 for having dynamic and static force monitoring function concurrently, special
Sign is that used electret is can be independently of foil electret thicker existing for substrate, then the electret is used as substrate simultaneously
Layer, without additional substrate, semiconductor material is deposited directly on foil electret；Electret and semiconductor equalizing used are thin
Film then needs additional substrate layer；Substrate is material all kinds of rigid or flexible.
5. the electret body transistor force snesor according to claim 4 for having dynamic and static force monitoring function concurrently, special
Sign is that source, drain electrode and the gate material of the transistor are each metalloid material, or is conducting polymer materials.
6. the electret body transistor power for having dynamic and static force monitoring function described in one of -5 concurrently according to claim 1 senses
Device, which is characterized in that device architecture is top-gated top contact, the contact of top-gated bottom, the contact of bottom gate bottom or bottom gate top contact；Semiconductor layer
It is deposited on electret layer, or vice versa, electret layer deposits on the semiconductor layer；The electret being orientated for electric dipole
Layer, does not need gate electrode.
7. the electret body transistor power for having dynamic and static force monitoring function described in one of -5 concurrently according to claim 1 senses
Device, which is characterized in that the external force be applied on electret piezotransistor with certain dynamic or static force, at this point,
Electret layer deformation leads to the change of polarized state, so as to cause the difference of semiconductor layer electric conductivity, via the survey of source-drain current
Amount realizes the monitoring to electret body transistor mechanical characteristic.
8. a kind of electret body transistor power sensing for having dynamic and static force monitoring function concurrently as described in one of claim 1-7
The preparation method of device, which is characterized in that according to the difference of material therefor, the preparation process of electret layer and semiconductor layer is also therewith
Adjustment；Wherein：
The electret is piezo-electric crystal and piezoelectric ceramics, is sunk using all kinds of vacuum depositions, chemical vapor deposition, physical vapor
The preparation of the techniques such as long-pending and liquid deposition；The electret is piezopolymer, is prepared using solution methods；The electret
Body is manual electret, including all kinds of porous electrets, and the preparation in hole is prepared using foam process, micro-structure form technology；It stays
Through polarization process after polar body film preparation completion；
The semiconductor material selects oxide semiconductor and organic semiconductor, using solution correlation and vacuum related process system
It is standby；The semiconductor material selects two-dimensional semiconductor, using mechanical stripping and chemical vapor deposition, molecular beam epitaxial process system
It is standby；
Source, drain electrode and the gate electrode of the transistor are metal material, are prepared using all kinds of vacuum technologies, the transistor
Source, drain electrode and gate electrode are polymer material, are prepared using solwution method.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109764983A (en) * | 2019-03-06 | 2019-05-17 | 京东方科技集团股份有限公司 | Double gate thin-film transistor, sensor and production method |
| IT201900001925A1 (en) * | 2019-02-11 | 2020-08-11 | St Poligrafico E Zecca Dello Stato S P A | MATRIX OF SENSORS AND PROCEDURE FOR ITS MANUFACTURING |
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