CN108195492A - Utilize the hypersensitive strain gauge of two-dimentional phase transformation material preparation - Google Patents
Utilize the hypersensitive strain gauge of two-dimentional phase transformation material preparation Download PDFInfo
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- CN108195492A CN108195492A CN201810053262.2A CN201810053262A CN108195492A CN 108195492 A CN108195492 A CN 108195492A CN 201810053262 A CN201810053262 A CN 201810053262A CN 108195492 A CN108195492 A CN 108195492A
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- dimentional
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- change material
- dimentional phase
- phase transformation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
Abstract
The present invention relates to a kind of hypersensitive strain gauges using two-dimentional phase transformation material preparation, including silicon substrate, layer of silicon dioxide dielectric layer are deposited on the silicon substrate, the thickness of silica dioxide medium layer is in 20 100nm；A recessed table top is made on the silica dioxide medium layer；The two-dimentional phase change material film of one layer of transfer covering on the concave station face of the silica dioxide medium layer, one metal electrode of each growth in both ends of the two dimension phase change material film.When molecular material is touched on two-dimentional phase change material film surface, film is bent by the effect of molecular material, lead to its internal generation stress, promote two-dimensional material that semiconductor-- metal phase change occurs, electric current measured by the metal electrode of film both ends is caused to change, and then the quality of binding molecule can be measured.The sensor that the present invention is prepared has the sensitivity that production method is easy, stability is good, is easily integrated, and has superelevation, and application prospect is extensive.
Description
Technical field
The present invention relates to a kind of strain gauge more particularly to a kind of hypersensitive stress using two-dimentional phase transformation material preparation
Sensor.
Background technology
Strain gauge is widely used in integrated circuit, due to integrated circuit increasingly miniaturized design standard increasingly
Height, industry also increase the size and sensitivity requirement of strain gauge therewith, should using two-dimentional phase transformation material preparation hypersensitive
Force snesor becomes a new way.Two-dimentional two telluride molybdenum of phase-change material belongs to stratiform Transition-metal dichalcogenide, has two
The layer structure of dimension.Every layer is made of sandwich structure Te-Mo-Te, is covalent bond between the Mo atoms and Te atoms in layer, and three
Te-Mo-Te the individual layers of Mingzhi's structure are highly stable, stable electrochemical property.And two telluride molybdenums are efficient with homojunction
Characteristic is 10-50 times of silicon, and electronics can move rapidly wherein, thus it has very high electric conductivity.
Two telluride molybdenums have high elastic modulus, are referred to as elastic material, when two telluride molybdenum of individual layer is by machineries such as molecular pressures
When stress bends, two telluride molybdenum of individual layer will generate the phase transformation that 1T is converted to by 2H, that is, mutually be changed to by semiconductor form
Metal phase.Two telluride molybdenum film material of individual layer is by semiconductor mutually to after the phase transformation of metal phase, and resistance changes, two end electrodes
On the electric current measured can also change therewith.By measuring the variation of electric current in two end electrodes, individual layer two can be calculated
The number and quality of the molecule adsorbed on telluride molybdenum.
Invention content
In view of the advantages of two dimension phase-change material described above, it is an object of the invention to propose a kind of two-dimentional phase transformation material of utilization
Expect the hypersensitive strain gauge prepared, electronics moves rapidly in two telluride molybdenums, the fast response time of sensor；Two telluriums simultaneously
Change molybdenum to presser sensor, therefore the sensitivity of sensor is very high；In addition, due to the two-dimensional characteristics of two telluride molybdenum materials, so device
Integrated level is high, good portability.
In order to achieve the above objectives, the technical scheme is that：A kind of hypersensitive using two-dimentional phase transformation material preparation should
Force snesor including silicon substrate, deposits layer of silicon dioxide dielectric layer on the silicon substrate, the thickness of silica dioxide medium layer exists
20-100nm；A recessed table top is made on the silica dioxide medium layer；The concave station of the silica dioxide medium layer
The two-dimentional phase change material film of one layer of transfer covering on face, one metal electricity of each growth in both ends of the two dimension phase change material film
Pole.
The recessed depth of recessed table top on the silica dioxide medium layer is between 10-20nm.
Recessed table top is made using chemical corrosion method on the silica dioxide medium layer.
The two-dimentional phase-change material of the two-dimentional phase change material film is two telluride molybdenum of individual layer, and thickness is within 1nm.
When touching molecular material on two-dimentional phase change material film surface, the two dimension phase change material film is by molecule
The pressure of material and bend, cause to generate stress inside two-dimentional phase change material film, two-dimentional phase change material film occur from
Phase transformation of the semiconductor to metal, the two-dimentional phase transformation material resistance of two-dimentional phase change material film change, and lead to two-dimentional phase transformation material
The electric current that material both ends metal electrode is surveyed changes, so as to calculate the molecular mass adsorbed in environment space.
Compared with strain gauge general at present, the invention has the advantages that：
（1）The two telluride molybdenum of two-dimentional phase-change material used in the present invention, homojunction is efficient, movement of the electronics in two telluride molybdenums
Rate is fast, and the response of sensor is fast.
（2）The two telluride molybdenum film of two-dimentional phase-change material used in the present invention is when by the pressure of molecular level material
The phase transformation by semiconductor to metal is generated, causes the variation of electric electrode current, sensor has the sensitivity of superelevation.
（3）The two telluride molybdenum of two-dimentional phase-change material used in the present invention has unique two-dimension plane structure, can be with the modern times
High-tech micro-nano technology technology is mutually connected, and the High Density Integration of sensor can be well realized, and improves the portable of device
Property.
Description of the drawings
Fig. 1 is the texture edge schematic diagram of the hypersensitive strain gauge using two-dimentional phase transformation material preparation of the present invention；
Fig. 2 is that the two-dimensional material of the hypersensitive strain gauge using two-dimentional phase transformation material preparation of the present invention bends strain
When texture edge schematic diagram；
Figure label explanation：1- silicon substrates, 2-silica dioxide medium layer, 3-two dimension phase change material film, 4-metal electrode A,
5-metal electrode B.
Specific embodiment
Below in conjunction with the embodiment that particular instance illustrates, embodiment and various features and related details herein will refer to
The non-limiting example of middle detailed description is illustrated and be described below in attached drawing and is explained more fully.It omits well-known
The description of component and treatment technology, in order to avoid the unnecessary embodiment indigestion made herein.It, can be with when making the structure
Use traditional handicraft well-known in semiconductor technology.Example used herein understands implementation herein just for the sake of help
The mode and further such that those skilled in the art can implement embodiment herein that example can be carried out.Thus, should not
Example herein is interpreted as limiting to the range of embodiment herein.
It should be noted that the diagram provided in the present embodiment only illustrates the basic conception of the present invention in a schematic way,
Then component count, shape and size when schema is only shown with related component in the present invention rather than according to actual implementation are drawn,
The kenel of each component, quantity and ratio can be a kind of random change, and its assembly layout kenel may also during its actual implementation
It is increasingly complex.
As shown in Figure 1, the present invention using two-dimentional phase transformation material preparation hypersensitive strain gauge, including silicon substrate 1,
Silica dioxide medium layer 2 is grown on silicon substrate 1, the table top of a recessed W is made on silica dioxide medium layer 2, in titanium dioxide
The two-dimentional phase change material film 3 of one layer of transfer covering on the table top of the recessed W of silicon dielectric layer.In two-dimentional phase change material film 3-two
Telluride molybdenum both ends grow a metal electrode A4, metal electrode B5 respectively.When there is molecular material contact two dimension phase-change material, two
Dimension phase change material film 3, which is under pressure, to bend, and inside generates stress, and the phase transformation from semiconductor to metal, two-dimensional phase occurs
The resistance for becoming material film 3 changes, and the electric current that two-dimentional 3 two end electrodes of phase transformation material film are surveyed is caused to change.
As shown in Fig. 2, the operation principle of the present invention is as follows：When molecular material touches two-dimentional 3 surface of phase change material film
When upper, two-dimentional phase change material film 3 is bent by the effect of molecular material.Since shape change leads to its internal generation
Phase transformation from from semiconductor to metal occurs for stress, two-dimentional phase-change material, and the resistance of two-dimentional phase change material film 3 changes, leads
The electric current that two dimension phase change material film 3 both ends metal electrode A4 and metal electrode B5 are surveyed is caused to change, from the variation of electric current
Calculate the molecular mass of two-dimentional phase-change material absorption.
Embodiment one：It is a kind of to utilize two-dimentional phase transformation material preparation hypersensitive strain gauge
First, using silicon as substrate material, and substrate is cleaned.
Layer of silicon dioxide dielectric layer is deposited on silicon substrate, to increase the adhesiveness between two-dimentional phase-change material and substrate.
Silica dioxide medium layer thickness is 70nm.
Later, corrode a concave station face using anhydrous hydrofluoric acid directly etching method in silica dioxide medium layer surface center；
Then one layer of two-dimentional phase-change material is covered by the method for transfer on the concave station face of dielectric layer, the two dimension phase-change material is single
Layer, the two-dimentional phase-change material be two telluride molybdenums, thickness 1nm；Mechanical stripping method can be used and prepare the layer, later by turning
Technique transfers are moved to be covered on the silica dioxide medium layer.
The crome metal film of one layer of 100nm thickness is deposited by electron beam evaporation again, metal is then made by stripping technology and is formed
Two electrode layers.
Embodiment two：It is a kind of to utilize two-dimentional phase transformation material preparation hypersensitive strain gauge
First, using silicon as substrate material, and substrate is cleaned.
Layer of silicon dioxide dielectric layer is deposited on silicon substrate, to increase the adhesiveness between two-dimentional phase-change material and substrate.
Silica dioxide medium layer thickness is 80nm.
Later, in silica dioxide medium layer surface center by one concave station face of ion etching；Positivity is filled in concave station face
Then photoresist carries out uv-exposure processing to photoresist；One layer of two-dimentional phase-change material is grown by CVD methods and is covered in concave station
On face, it is described two dimension phase-change material be individual layer, the two-dimentional phase-change material be two telluride molybdenums, thickness 1nm；Developer solution is used again
Photoetching positive photoresist after exposure is dissolved.
Vacuum coating equipment is utilized in one layer of 100nm of surface deposition of two telluride molybdenum of two-dimensional material by template of copper mask again
Then thick metal golden film forms two electrode layers by stripping technology.
The above is only presently preferred embodiments of the present invention, and any type of limitation is not done to the present invention.Although
The present invention is disclosed above with preferred embodiments, however is not limited to the present invention.Any person skilled in the art,
It does not depart from the range of technical solution of the present invention, when making a little change using method and technique content described above or repair
The equivalent embodiment for equivalent variations is adornd, as long as being the content without departing from the technology of the present invention incidence of criminal offenses, technology according to the present invention is real
Any simple modification, equivalent change and modification that confrontation above example is done, in the range of still falling within technical solution of the present invention.
Claims (5)
1. a kind of hypersensitive strain gauge using two-dimentional phase transformation material preparation, including silicon substrate, it is characterised in that：The silicon
Layer of silicon dioxide dielectric layer is deposited on substrate, the thickness of silica dioxide medium layer is in 20-100nm；The silica is situated between
A recessed table top is made on matter layer；The two-dimentional phase transformation material of one layer of transfer covering on the concave station face of the silica dioxide medium layer
Expect film, the both ends of the two dimension phase change material film respectively grow a metal electrode.
2. the hypersensitive strain gauge according to claim 1 using two-dimentional phase transformation material preparation, it is characterised in that：Institute
The recessed depth of the recessed table top on silica dioxide medium layer is stated between 10-20nm.
3. the hypersensitive strain gauge according to claim 1 using two-dimentional phase transformation material preparation, which is characterized in that institute
It states and recessed table top is made using chemical corrosion method on silica dioxide medium layer.
4. the method according to claim 1 using two-dimentional phase transformation material preparation hypersensitive strain gauge, feature exists
In：The two-dimentional phase-change material of the two-dimentional phase change material film is two telluride molybdenum of individual layer, and thickness is within 1nm.
5. according to any hypersensitive strain gauges using two-dimentional phase transformation material preparation of claim 1-4, feature
It is：When touching molecular material on two-dimentional phase change material film surface, the two dimension phase change material film is by molecule material
The pressure of material and bend, cause to generate stress inside two-dimentional phase change material film, two-dimentional phase change material film occurs from half
Phase transformation of the conductor to metal, the two-dimentional phase transformation material resistance of two-dimentional phase change material film change, and lead to two-dimentional phase-change material
The electric current that both ends metal electrode is surveyed changes, so as to calculate the molecular mass adsorbed in environment space.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109282930A (en) * | 2018-09-30 | 2019-01-29 | 深圳大学 | Stress detection device and stress detection matrix system |
| CN109727846A (en) * | 2018-12-19 | 2019-05-07 | 北京大学 | The method and application of hetero-junctions in the two-dimentional telluride molybdenum face that large area preparation metal phase is in contact with semiconductor |
| CN109799014A (en) * | 2019-03-01 | 2019-05-24 | 西安交通大学 | A kind of flexible pressure-sensitive sensor and preparation method thereof |
| CN109855775A (en) * | 2019-01-25 | 2019-06-07 | 上海电力学院 | A kind of preparation method of microstress sensor |
| WO2020062215A1 (en) * | 2018-09-30 | 2020-04-02 | 深圳大学 | Stress detection device and stress detection matrix system |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109855775A (en) * | 2019-01-25 | 2019-06-07 | 上海电力学院 | A kind of preparation method of microstress sensor |
| CN109799014A (en) * | 2019-03-01 | 2019-05-24 | 西安交通大学 | A kind of flexible pressure-sensitive sensor and preparation method thereof |
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Application publication date: 20180622 |