CN107907251A - Pressure sensor and preparation method thereof - Google Patents
Pressure sensor and preparation method thereof Download PDFInfo
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- CN107907251A CN107907251A CN201711020901.7A CN201711020901A CN107907251A CN 107907251 A CN107907251 A CN 107907251A CN 201711020901 A CN201711020901 A CN 201711020901A CN 107907251 A CN107907251 A CN 107907251A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B33/00—Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/20—Inorganic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/20—Inorganic coating
- B32B2255/205—Metallic coating
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The present invention provides a kind of pressure sensor and preparation method thereof, pressure sensor includes thin film transistor (TFT) and the sensitive layer on thin film transistor (TFT), thin film transistor (TFT) includes semiconductor layer and metal electrode, the metal electrode includes the grid arranged on the semiconductor layer, sensitive layer includes upper sensitive layer, the lower surface of upper sensitive layer has micro structure array, micro structure array includes the micro-structure that multiple arrays are set, sensitive layer further includes the first conductive layer for being covered in micro structure array surface, and the first conductive layer is electrically connected with grid.Pressure sensor provided by the invention includes thin film transistor (TFT) and sensitive layer, sensitive layer includes the upper sensitive layer with micro structure array and the first conductive layer for being covered in micro structure array surface, by setting micro structure array on sensitive layer, so that taken into account while the pressure sensor is with high sensitivity with big measurement range, and the structure of the pressure sensor is simple, simplifies preparation process, reduce manufacturing cost.
Description
Technical field
The present invention relates to sensor technical field, more particularly to a kind of pressure sensor and preparation method thereof.
Background technology
With scientific and technical quickly development, requirement of the mankind to pressure sensor is higher and higher, high sensitivity, big survey
The features such as amount scope, flexibility, has become the trend of future pressure sensor development, wherein, how to cause pressure sensor at the same time
Possessing high sensitivity and big measurement range becomes the problem of the area research.
Traditional pressure sensor mainly includes pressure resistance type, inductance type and condenser type three major types, passes through device master respectively
Form the resistance, inductance and capacitance of structure and produce change under external pressure effect, recycle measuring circuit by these three
The change of physical quantity is finally reached the purpose of detection external pressure change by a series of processing.Traditional pressure sensor is not only
Sensitivity is relatively low and needs peripheral circuit to coordinate the purpose that can be only achieved measurement pressure.Occur in recent years based on thin film transistor (TFT)
Pressure sensor design, solve the problems, such as peripheral circuit to a certain extent, while also so that sensitivity is in traditional pressure
Improve on the basis of force snesor, therefore the pressure sensor based on thin film transistor (TFT) is future pressure sensor
Research direction.
Existing based on the pressure sensor of thin film transistor (TFT) is difficult to take into account with big while with high sensitivity
Measurement range, and the preparation process that with high sensitivity while can take into account the pressure sensor with big measurement range answers
It is miscellaneous, cost is too high.
The content of the invention
To solve the above-mentioned problems, the present invention proposes a kind of pressure sensor and preparation method thereof, the pressure sensor
It can be taken into account while sensitivity is lifted and simplify preparation process with big measurement range, the preparation method, reduce
Manufacturing cost.
Concrete technical scheme proposed by the present invention is：A kind of pressure sensor is provided, the pressure sensor includes film
Transistor and the sensitive layer on the thin film transistor (TFT), the thin film transistor (TFT) include semiconductor layer and metal electrode, institute
The grid that metal electrode includes being arranged on the semiconductor layer is stated, the sensitive layer includes upper sensitive layer, the upper sensitive layer
Lower surface there is micro structure array, the micro structure array includes the micro-structure that multiple arrays are set, and the sensitive layer also wraps
The first conductive layer for being covered in the micro structure array surface is included, first conductive layer is electrically connected with the grid.
Further, the sensitive layer further includes lower sensitive layer and the second conductive layer, and the lower sensitive layer is located on described
Between sensitive layer and the grid, second conductive layer is covered in the upper surface of the lower sensitive layer and from the lower sensitive layer
One end extend to the surface of the grid.
Further, the bottom of the micro-structure is set fluted.
Further, the depth of the groove is less than the thickness of the micro structure array, and/or the multiple array is set
Micro-structure in spacing between two neighboring micro-structure it is equal.
Further, the micro-structure and the shape of the groove are cylinder.
Further, the semiconductor layer includes substrate, the active layer being sequentially arranged in from below to up on the substrate, insulation
Layer, the metal electrode further include the source electrode and drain electrode between the substrate and the active layer, the source electrode, drain electrode point
Not Wei Yu the substrate both ends.
Further, the pressure sensor further includes the resistance between the insulating layer and the lower sensitive layer
Layer, the resistive layer are located at one end of the grid and extend to the surface of the grid.
Further, the material of the sensitive layer is dimethyl silicone polymer (polydimethylsiloxane, PDMS),
And/or the material of the active layer is amorphous indium gallium zinc oxide (indium gallium zinc oxide, IGZO) film.
Present invention also offers a kind of preparation method of pressure sensor, the preparation method includes：
A glass film plates, a thin film transistor (TFT) are provided, the thin film transistor (TFT) includes semiconductor layer and metal electrode, described
Metal electrode includes the grid arranged on the semiconductor layer；
Template is formed on the glass film plates using photoetching process, etching technics successively；
The template surface spin coating dimethyl silicone polymer and formed on the surface of the template after being heating and curing solid
Change layer；
Sur-face peeling by the cured layer from the template, obtains the upper sensitive layer with micro structure array, described micro-
Array of structures includes the micro-structure that multiple arrays are set；
A conductive film is deposited on the surface of the micro structure array and forms the first conductive layer, obtains sensitive layer；
The sensitive layer is assembled on the thin film transistor (TFT), so that first conductive layer is electrically connected with the grid
Connect.
Further, before the sensitive layer is assembled on the thin film transistor (TFT), the preparation method further includes：
The thin film transistor (TFT) surface spin coating dimethyl silicone polymer and after being heating and curing in the thin film transistor (TFT)
Surface form lower sensitive layer；
A conductive film is deposited on the surface of the lower sensitive layer and forms the second conductive layer；
Second conductive layer and first conductive layer are pressed by laminating technology, obtain the sensitive layer.
Pressure sensor provided by the invention includes thin film transistor (TFT) and sensitive layer, and the sensitive layer includes having micro-structure
The upper sensitive layer of array and the first conductive layer for being covered in the micro structure array surface, the sensitive layer are led by described first
Electric layer and the grid of the thin film transistor (TFT) are electrically connected, by setting micro structure array on sensitive layer so that the pressure
Taken into account while sensor is with high sensitivity with big measurement range, and the structure of the pressure sensor is simple, simplifies
Preparation process, reduce manufacturing cost.
Brief description of the drawings
What is carried out in conjunction with the accompanying drawings is described below, above and other aspect, feature and advantage of the embodiment of the present invention
It will become clearer, in attached drawing：
Fig. 1 is the structure diagram of pressure sensor；
Fig. 2 is the profile of micro-structure；
Fig. 3 to Fig. 8 is the flow chart of the preparation method of pressure sensor.
Embodiment
Hereinafter, with reference to the accompanying drawings to detailed description of the present invention embodiment.However, it is possible to come in many different forms real
Apply the present invention, and the specific embodiment of the invention that should not be construed as limited to illustrate here.Conversely, there is provided these implementations
Example is in order to explain the principle of the present invention and its practical application, so that others skilled in the art are it will be appreciated that the present invention
Various embodiments and be suitable for the various modifications of specific intended application.
With reference to Fig. 1, pressure sensor provided in this embodiment is resistive pressure sensor, it includes thin film transistor (TFT) 1
And the sensitive layer 2 on thin film transistor (TFT) 1.Thin film transistor (TFT) 1 includes semiconductor layer and metal electrode, and metal electrode includes setting
In the grid 11 of semiconductor layer, sensitive layer 2 includes upper sensitive layer 21, and the lower surface of upper sensitive layer 21 has micro structure array
21a, micro structure array 21a include the micro-structure 210 that multiple arrays are set, and sensitive layer 2, which further includes, is covered in micro structure array 21a
First conductive layer 22 on surface, the first conductive layer 22 are electrically connected with grid 11.
The upper surface of upper sensitive layer 21, which is pressed, to be deformed upon, its resistance value changes, the first conductive layer 22 and grid 11
It is electrically connected, it is used for the change that the change of resistance value is converted to the voltage on grid 11, then by thin film transistor (TFT) 1 by grid
The change of voltage on 11 is enlarged into the change of the electric current of the source-drain electrode of thin film transistor (TFT) 1, so that the source according to thin film transistor (TFT) 1
The electric current of drain electrode changes to detect the size of pressure.By setting micro structure array 21a on sensitive layer 2, can to press
Force snesor is while with high sensitivity with big measurement range.
Sensitive layer 2 further includes lower 23 and second conductive layer 24 of sensitive layer, and lower sensitive layer 23 is located at upper sensitive layer 21 and film
Between transistor 1, the second conductive layer 24 is covered in the upper surface of lower sensitive layer 23, the second conductive layer 24 and the electricity of the first conductive layer 22
Property connection.Substrate using lower sensitive layer 23 as whole sensitive layer 2, on the one hand can lift the sensitive of whole pressure sensor
Degree, on the other hand can also play the role of protection to thin film transistor (TFT) 1, prevent thin film transistor (TFT) 1 to be subject to because of unbalance stress
Damage.
Spacing in the micro-structure 210 that multiple arrays are set between two neighboring micro-structure 210 is equal, can so cause
The surface uniform force of thin film transistor (TFT) 1, further lifts the sensitivity of whole pressure sensor and prevents thin film transistor (TFT) 1
It is damaged because of unbalance stress.In the present embodiment, the spacing between two neighboring micro-structure 210 is 0~5 micron.
The bottom of micro-structure 210 opens up fluted 211, and the depth of groove 211 is less than the thickness of micro structure array 21a, recessed
Groove 211 is located at the center of the bottom of micro-structure 210.In the present embodiment the width of micro-structure 210 and two neighboring micro-structure 210 it
Between spacing it is equal, the width of groove 211 is 1~4 micron.When being subject to less pressure, micro-structure 210 is surround sensitive layer 2
Part around groove 211 is produced compared with large deformation, causes the change of the resistance of sensitive layer 21, so that pressure sensor energy
Enough detect deformation during smaller pressure, improve the sensitivity of pressure sensor；Sensitive layer 2 when being subject to larger pressure,
The part that micro-structure 210 is located at the top of groove 211 is produced compared with large deformation, causes the change of the resistance of sensitive layer 21, so that
Deformation when pressure sensor is able to detect that larger pressure is obtained, improves the detection range of pressure sensor, therefore, this implementation
Pressure sensor in example can be while with high sensitivity with big measurement range.
Larger deformation can also occur when being subject to less pressure, so that the sensitivity of pressure sensor is improved,
Meanwhile by setting micro structure array 21a on sensitive layer 2 so that sensitive layer 2 also can be into one when being subject to larger pressure
Deform upon to step so that pressure sensor has big measurement range.
With reference to Fig. 2, micro-structure 210 and the shape of groove 211 are cylinder in the present embodiment, its cross sectional shape is circle
Annular.Certainly, also micro-structure 210 and the shape of groove 211 can be set according to actual needs in other embodiments
It is fixed, do not limit here.
Thin film transistor (TFT) 1 in the present embodiment is top gate type, it further includes substrate 12, is sequentially arranged in substrate 12 from below to up
On active layer 13, insulating layer 14 and source electrode 15 between substrate 12 and active layer 13 and drain electrode 16, source electrode 15, drain electrode 16
It is located at the both ends of substrate 12 respectively, grid 11 is arranged on insulating layer 14, and the second conductive layer 24 extends from one end of lower sensitive layer 23
To the surface of grid 11, it is electrically connected so as to fulfill with grid 11.Certainly, the thin film transistor (TFT) 1 in the present embodiment can also be it
The transistor of his type, for example, being bottom gate type or double grid type, at this time, it is only necessary to electrically connect the second conductive layer 24 with grid 11
Connect, for example, being connected the second conductive layer 24 with grid 11 by conducting wire or by the way that the second conductive layer 24 is arranged to not
With structure and it is connected with grid 11 or is connected the second conductive layer 24 with grid 11 by other conductive structure layers
Connect.
In order to reduce the power consumption of whole pressure sensor, the pressure sensor in the present embodiment is further included arranged on insulating layer 14
With the resistive layer 3 between lower sensitive layer 23, resistive layer 3 is located at one end of grid 11 and extends to the surface of grid 11, wherein, electricity
Resistance layer 3 is electrically connected with both ends of second conductive layer 24 respectively with grid 11.Certainly, resistive layer 3 can also be arranged on elsewhere,
Only need its being connected with grid 11 and be not connected to the second conductive layer 24, sensitive layer 2 and resistive layer 3 form film crystal
The gate voltage control unit of pipe 1, the voltage of the grid 11 of thin film transistor (TFT) 1 can be adjusted by resistive layer 3.
The material of sensitive layer 2 is PDMS in the present embodiment, and the material of active layer 13 is IGZO films.By by sensitive layer 2
Material elect PDMS as and can be elected as by the material of active layer 13 so that pressure sensor has the characteristics of flexible, transparent concurrently
IGZO films cause thin film transistor (TFT) in the present embodiment have low threshold voltage, high switching current than characteristic, so as to be lifted
The sensitivity of pressure sensor.Wherein, the thickness of upper sensitive layer 21 is 100~500 microns, and the thickness of lower sensitive layer 23 is
300~500 microns, influence of second conductive layer 24 to grid 11 can be controlled by the thickness for adjusting lower sensitive layer 23.
The material of grid 11, source electrode 15 and drain electrode 16 in the present embodiment is molybdenum, or aluminium, nickel, gold, ITO, silver
Or multilayer material.The material of insulating layer 14 is aluminium oxide, or hafnium oxide, silica etc..First conductive layer 22 and
The material of two conductive layers 24 is the conductive materials such as silver, golden film, nano silver wire, nanowires of gold, carbon nanotubes, graphene.Resistance
The material of layer 3 is zinc oxide, or other metals or metal oxide, for example, the material of resistive layer 3 is silver or molybdenum,
Or the material of resistive layer 3 is Al-Doped ZnO.Wherein, the thickness of the first conductive layer 22 and the second conductive layer 24 be 50~
100 nanometers.
With reference to Fig. 3~8, the present embodiment additionally provides a kind of preparation method of pressure sensor, and it is above-mentioned to be used to prepare acquisition
Pressure sensor, the preparation method include：
Step S1, a glass film plates 4, a thin film transistor (TFT) 1 are provided, thin film transistor (TFT) 1 includes grid 11, as shown in Figure 3.
Step S2, template 5 is formed on glass film plates 4 using photoetching process, etching technics successively, as shown in Figure 4.
Specifically, step S2 includes：
S21, be using magnetron sputtering technique deposition molybdenum film, sputtering power 100W, air pressure in glass substrate 4
0.1Pa, nitrogen flow 18sccm, the thickness of molybdenum film is 3um；
S22, on molybdenum film with the spin speed spin coating photoresist of 500r/min and 3000r/min, photoresist model
P1000, in thermal station with 120 DEG C heating, heating time for 3 points 30 seconds；Utilize the circular array photolithography plate that pattern is diameter 5um
5s is exposed, then the 30s that develops forms circular array pattern；
S23, using concentration be 2% hydrogen peroxide the molybdenum film is performed etching as etching agent, etch period 30s；
As shown in figure 4, etching formed etching pattern includes multiple spaced first pattern, 100 and second patterns 101, its
In, the depth of the first pattern 100 is 2um, width 1.5um, and the depth of the second pattern 101 is 1um, the first pattern 100 and
Spacing between two patterns 101 is equal；Then the molybdenum film after being etched with deionized water is rinsed, and is put into acetone soln and is surpassed
Sound 5min, removes the photoresist on molybdenum film surface, then is dried up with deionized water rinsing, nitrogen, at this time, forms template 5.
Step S3, template 5 surface spin coating PDMS and form cured layer 6 on the surface of template 5 after being heating and curing, such as scheme
Shown in 5.
Specifically, step S3 includes：
S31, by PDMS predecessors and curing agent using mass ratio as 10:1 be mixed 10 minutes, obtains mixed liquor；
S32, put mixed liquor 10 minutes in the vacuum chamber, to remove the bubble in mixed liquor；
Mixed liquor in step S32, be spin-coated in template 5 by S33 with spin coating instrument with the rotating speed of 800r/min, is subsequently placed in
When heating 2 is small in 80 DEG C of thermal station, cured layer 6 is obtained.
Step S4, the sur-face peeling by cured layer 6 from template 5, obtains the upper sensitive layer 21 with micro structure array 21a,
Micro structure array 21a includes the micro-structure 210 that multiple arrays are set, and the bottom of micro-structure 210 has groove 211, such as Fig. 6 institutes
Show.
Specifically, cured layer 6 after cooling is put into ultrasound 10 in the mixed solution of hydrogen peroxide and ammonium hydroxide in step s 4
Minute, template 5 is dissolved, cured layer 6 departs from glass substrate 4.6 taking-up of cured layer deionized water is cleaned by ultrasonic totally simultaneously
Dry at room temperature, obtain the upper sensitive layer 21 with micro structure array 21a, the width of the micro-structure 210 obtained is micro- for 3.4
Rice, thickness are 2 microns, and the width of groove 211 is 2 microns, depth 1um.
Step S5, a conductive film is deposited on the surface of micro structure array 21a and forms the first conductive layer 22, obtain sensitive layer
2, as shown in Figure 7.
Specifically, the upper sensitive layer 21 with micro structure array 21a is put into vacuum chamber in step s 5 and passes through heat
One layer of Ag films are deposited in evaporation technology, and evaporation current 90A, evaporation rate 1nm/s, the thickness of Ag films is 100 nanometers,
The surface of micro structure array 21a forms the first conductive layer 22.
Step S6, sensitive layer 2 is assembled on thin film transistor (TFT) 1, so that the first conductive layer 22 is electrically connected with grid 11.
Before step S6, the preparation method in the present embodiment further includes：
Thin film transistor (TFT) 1 surface spin coating PDMS and form lower sensitivity on the surface of thin film transistor (TFT) 1 after being heating and curing
Layer 23, specifically, in the surface spin coating PDMS of grid 11, so that grid 11 is completely covered in PDMS, then passes through laser boring
Technique removes the PDMS of 11 one end of grid, and one end of grid 11 is exposed, and forms lower sensitive layer 23；
A conductive film is deposited on the surface of lower sensitive layer 23 and forms the second conductive layer 24, wherein, the second conductive layer 24 covers
It is placed on the upper surface of lower sensitive layer 23 and the surface of grid 11 is extended to from one end that lower sensitive layer 23 exposes grid 11, so that real
Now it is electrically connected with grid 11；
Second conductive layer 24 and the first conductive layer 22 are pressed by laminating technology, obtain sensitive layer 2, specifically,
First conductive layer 22 is bonded with the second conductive layer 24, and pressurizes and compresses at 120 DEG C, acquisition has upper sensitive layer 21, first
The sensitive layer 2 of conductive layer 22,23 and second guide layer 24 of lower sensitive layer, as shown in Figure 8.
1 preparation process of thin film transistor (TFT) comprises the following steps in step S1 in the present embodiment：
Using electron beam evaporation process, mask grows metallic aluminium respectively as source electrode 15, drain electrode 16, speed on the substrate 12
For 2.5nm/s, source electrode 15, the length of drain electrode 16 are 20 microns, and source electrode 15, the thickness of drain electrode 16 are 200 nanometers；
Grow IGZO films on the substrate 12 by the use of magnetron sputtering masking process is as active layer 13, sputtering power
200W, pressure 0.4Pa, oxygen are 1 with nitrogen flow ratio:30, raceway groove length and width are 50 microns and 500 microns, and thickness is received for 30
Rice, so that substrate 12, source electrode 15 and drain electrode 16 is completely covered in active layer 13；
The substrate 12 that growth has active layer 13 is put into atomic layer deposition apparatus, utilizes trimethyl aluminium and aquatic long oxidation
Aluminium film is as insulating layer 14, and for speed often to circulate 1 angstrom, the thickness of insulating layer 14 is 100 nanometers；
Mo films are grown on insulating layer 14 by the use of magnetron sputtering masking process as grid 11, sputtering power 300W,
Pressure is 0.1Pa, nitrogen flow 18sccm, and the length of grid 11 is 80 microns, thickness is 30 nanometers；
The substrate 12 that growth has grid 11 is put in a nitrogen atmosphere, when 300 DEG C of annealing 1 are small, obtains required film
Transistor 1.
Wherein, after thin film transistor (TFT) 1 is prepared, the preparation method of the present embodiment also includes on thin film transistor (TFT) 1
By the use of magnetron sputtering masking process growing zinc oxide film as resistive layer 3, electricity is adjusted using conditions such as sputtering power and pressure
The resistance value of resistance layer 3.For example, sputtering power is 220W, pressure 0.09Pa, argon flow amount 20sccm, oxygen flow is
2sccm, resistive layer 3 are square 10 microns long, its thickness is 200 nanometers, and resistance is 1 megaohm.
The above is only the embodiment of the application, it is noted that for the ordinary skill people of the art
For member, on the premise of the application principle is not departed from, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as the protection domain of the application.
Claims (10)
- A kind of 1. pressure sensor, it is characterised in that the sensitive layer including thin film transistor (TFT) and on the thin film transistor (TFT), The thin film transistor (TFT) includes semiconductor layer and metal electrode, and the metal electrode includes the grid arranged on the semiconductor layer Pole, the sensitive layer include upper sensitive layer, and the lower surface of the upper sensitive layer has micro structure array, the micro structure array bag The micro-structure that multiple arrays are set is included, the sensitive layer further includes the first conductive layer for being covered in the micro structure array surface, First conductive layer is electrically connected with the grid.
- 2. pressure sensor according to claim 1, it is characterised in that the sensitive layer further includes lower sensitive layer and second Conductive layer, between first conductive layer and the grid, second conductive layer is covered in described the lower sensitive layer The upper surface of lower sensitive layer and the surface that the grid is extended to from one end of the lower sensitive layer.
- 3. pressure sensor according to claim 1 or 2, it is characterised in that the bottom of the micro-structure sets fluted.
- 4. pressure sensor according to claim 3, it is characterised in that the depth of the groove is less than the micro-structure battle array Spacing in the thickness of row, and/or the micro-structure of the multiple array setting between two neighboring micro-structure is equal.
- 5. pressure sensor according to claim 4, it is characterised in that the micro-structure and the shape of the groove are Cylinder.
- 6. pressure sensor according to claim 2, it is characterised in that the semiconductor layer includes substrate, from below to up Active layer, the insulating layer being sequentially arranged on the substrate, the metal electrode are further included arranged on the substrate and the active layer Between source electrode and drain electrode, the source electrode, drain electrode respectively be located at the substrate both ends.
- 7. pressure sensor according to claim 6, it is characterised in that further include arranged on the insulating layer with it is described under it is quick Feel the resistive layer between layer, the resistive layer is located at one end of the grid and extends to the surface of the grid.
- 8. pressure sensor according to claim 1, it is characterised in that the material of the sensitive layer is polydimethylsiloxanes Alkane, and/or the material of the active layer is amorphous indium gallium zinc oxide film.
- A kind of 9. preparation method of pressure sensor, it is characterised in that including：A glass film plates, a thin film transistor (TFT) are provided, the thin film transistor (TFT) includes semiconductor layer and metal electrode, the metal Electrode includes the grid arranged on the semiconductor layer；Template is formed on the glass film plates using photoetching process, etching technics successively；The template surface spin coating dimethyl silicone polymer and form cured layer on the surface of the template after being heating and curing；Sur-face peeling by the cured layer from the template, obtains the upper sensitive layer with micro structure array, the micro-structure Array includes the micro-structure that multiple arrays are set；A conductive film is deposited on the surface of the micro structure array and forms the first conductive layer, obtains sensitive layer；The sensitive layer is assembled on the thin film transistor (TFT), so that first conductive layer is electrically connected with the grid.
- 10. preparation method according to claim 9, it is characterised in that brilliant the sensitive layer is assembled into the film Before on body pipe, the preparation method further includes：The thin film transistor (TFT) surface spin coating dimethyl silicone polymer and after being heating and curing in the table of the thin film transistor (TFT) Face forms lower sensitive layer；A conductive film is deposited on the surface of the lower sensitive layer and forms the second conductive layer；Second conductive layer and first conductive layer are pressed by laminating technology, obtain the sensitive layer.
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|---|---|---|---|---|
| CN109540354A (en) * | 2018-12-03 | 2019-03-29 | 深圳先进技术研究院 | Pressure sensor and preparation method thereof |
| CN109556768A (en) * | 2018-12-03 | 2019-04-02 | 深圳先进技术研究院 | Pressure sensor and preparation method thereof |
| CN110346078A (en) * | 2019-07-30 | 2019-10-18 | 天津大学 | Capacitive pliable pressure sensor and its preparation method and application |
| CN110459543A (en) * | 2019-07-17 | 2019-11-15 | 深圳大学 | A kind of flush memory device and preparation method thereof |
| CN111750975A (en) * | 2020-06-19 | 2020-10-09 | 电子科技大学 | Flexible vibration sensor with piezoresistive effect and preparation method thereof |
| CN111811701A (en) * | 2020-07-20 | 2020-10-23 | 中国科学院重庆绿色智能技术研究院 | Multistage microstructure gate thin film transistor flexible pressure sensor and preparation method thereof |
| CN113884226A (en) * | 2021-09-28 | 2022-01-04 | 上海交通大学 | Pressure sensor, pressure sensing array and preparation method thereof |
| CN114993523A (en) * | 2022-04-16 | 2022-09-02 | 福州大学 | Variable-area capacitive pressure sensor with circular-convex structure and preparation method thereof |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102967407A (en) * | 2012-10-23 | 2013-03-13 | 深圳先进技术研究院 | Absolute pressure transducer chip and production method thereof |
| CN105841849A (en) * | 2016-03-25 | 2016-08-10 | 电子科技大学 | Flexible pressure sensor and film transistor integrated member and preparation method thereof |
| CN105865667A (en) * | 2016-05-19 | 2016-08-17 | 北京印刷学院 | Capacitive flexible pressure sensor based on microstructural dielectric layers and preparation method of capacitive flexible pressure sensor |
| CN106017751A (en) * | 2016-05-25 | 2016-10-12 | 东南大学 | High-sensitivity piezoresistive pressure sensor and preparation method thereof |
| CN106768520A (en) * | 2016-12-28 | 2017-05-31 | 中国科学院深圳先进技术研究院 | pressure sensor and preparation method thereof |
| CN106932128A (en) * | 2017-04-21 | 2017-07-07 | 清华大学深圳研究生院 | For the pressure sensitive layer and piezoresistive pressure sensor of piezoresistive pressure sensor |
| CN106950000A (en) * | 2017-03-29 | 2017-07-14 | 深圳大学 | A kind of Pulse pressure sensor, chip, device, system and preparation method thereof |
-
2017
- 2017-10-27 CN CN201711020901.7A patent/CN107907251B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102967407A (en) * | 2012-10-23 | 2013-03-13 | 深圳先进技术研究院 | Absolute pressure transducer chip and production method thereof |
| CN105841849A (en) * | 2016-03-25 | 2016-08-10 | 电子科技大学 | Flexible pressure sensor and film transistor integrated member and preparation method thereof |
| CN105865667A (en) * | 2016-05-19 | 2016-08-17 | 北京印刷学院 | Capacitive flexible pressure sensor based on microstructural dielectric layers and preparation method of capacitive flexible pressure sensor |
| CN106017751A (en) * | 2016-05-25 | 2016-10-12 | 东南大学 | High-sensitivity piezoresistive pressure sensor and preparation method thereof |
| CN106768520A (en) * | 2016-12-28 | 2017-05-31 | 中国科学院深圳先进技术研究院 | pressure sensor and preparation method thereof |
| CN106950000A (en) * | 2017-03-29 | 2017-07-14 | 深圳大学 | A kind of Pulse pressure sensor, chip, device, system and preparation method thereof |
| CN106932128A (en) * | 2017-04-21 | 2017-07-07 | 清华大学深圳研究生院 | For the pressure sensitive layer and piezoresistive pressure sensor of piezoresistive pressure sensor |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109540354B (en) * | 2018-12-03 | 2020-10-23 | 深圳先进技术研究院 | Pressure sensor and preparation method thereof |
| WO2020114367A1 (en) * | 2018-12-03 | 2020-06-11 | 深圳先进技术研究院 | Pressure sensor and preparation method therefor |
| CN109540354A (en) * | 2018-12-03 | 2019-03-29 | 深圳先进技术研究院 | Pressure sensor and preparation method thereof |
| CN109556768B (en) * | 2018-12-03 | 2020-10-23 | 深圳先进技术研究院 | Pressure sensor and preparation method thereof |
| CN109556768A (en) * | 2018-12-03 | 2019-04-02 | 深圳先进技术研究院 | Pressure sensor and preparation method thereof |
| WO2020114366A1 (en) * | 2018-12-03 | 2020-06-11 | 深圳先进技术研究院 | Pressure sensor and preparation method therefor |
| CN110459543A (en) * | 2019-07-17 | 2019-11-15 | 深圳大学 | A kind of flush memory device and preparation method thereof |
| CN110346078A (en) * | 2019-07-30 | 2019-10-18 | 天津大学 | Capacitive pliable pressure sensor and its preparation method and application |
| CN111750975A (en) * | 2020-06-19 | 2020-10-09 | 电子科技大学 | Flexible vibration sensor with piezoresistive effect and preparation method thereof |
| CN111811701B (en) * | 2020-07-20 | 2021-10-29 | 中国科学院重庆绿色智能技术研究院 | Multistage microstructure gate thin film transistor flexible pressure sensor and preparation method thereof |
| CN111811701A (en) * | 2020-07-20 | 2020-10-23 | 中国科学院重庆绿色智能技术研究院 | Multistage microstructure gate thin film transistor flexible pressure sensor and preparation method thereof |
| CN113884226A (en) * | 2021-09-28 | 2022-01-04 | 上海交通大学 | Pressure sensor, pressure sensing array and preparation method thereof |
| CN114993523A (en) * | 2022-04-16 | 2022-09-02 | 福州大学 | Variable-area capacitive pressure sensor with circular-convex structure and preparation method thereof |
| CN114993523B (en) * | 2022-04-16 | 2023-04-11 | 福州大学 | Variable-area capacitive pressure sensor with circular-convex structure and preparation method thereof |
| WO2024092705A1 (en) * | 2022-11-04 | 2024-05-10 | 深圳市韶音科技有限公司 | Sensing apparatus |
| CN115855324A (en) * | 2022-12-26 | 2023-03-28 | 厦门大学 | Thin film pressure sensor for detecting expansion of lithium battery cell and preparation method thereof |
| CN115855324B (en) * | 2022-12-26 | 2024-04-30 | 厦门大学 | Film pressure sensor for detecting expansion of lithium battery core and preparation method thereof |
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