CN109556768B - Pressure sensor and preparation method thereof - Google Patents
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- CN109556768B CN109556768B CN201811465689.XA CN201811465689A CN109556768B CN 109556768 B CN109556768 B CN 109556768B CN 201811465689 A CN201811465689 A CN 201811465689A CN 109556768 B CN109556768 B CN 109556768B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
Abstract
The invention discloses a pressure sensor and a preparation method thereof, wherein the pressure sensor comprises a first electrode plate and a second electrode plate which are oppositely arranged, and is characterized in that the first electrode plate comprises a first substrate and a metal interdigital electrode arranged on the first substrate, and the surface of the metal interdigital electrode is formed into a rough surface; the second electrode plate comprises a second substrate with a microstructure array on one side surface and a composite metal layer covered on the microstructure array; and the composite metal layer and the rough surface are mutually butted and connected. The pressure sensor can improve the sensitivity and maintain the stability of device circulation.
Description
Technical Field
The invention belongs to the technical field of sensors, and particularly relates to a pressure sensor and a preparation method thereof.
Background
In recent years, more and more researchers are engaged in research on applying pressure sensing devices to the fields of artificial intelligence, electronic skin and the like, the research contents mainly include theoretical basis, advanced materials, preparation process, packaging technology and the like, and a series of important progresses are made on the aspects of realizing miniaturization, commercialization and the like of the pressure sensors.
Among the many new pressure sensing devices under study, they are mainly classified into three main categories according to their principles of action:
the first type, resistive pressure sensors, (due to wave retention, Zhaozhi, square earthquake. metal strain type pressure sensors based on MEMS technology are optimized and designed instrument technology and sensors, 2010.2) mainly reflect the pressure by measuring the resistance change, wherein the resistance change can be classified into strain type and piezoresistive type: the strain type pressure sensor displays the pressure by the resistance change caused by the deformation of the material, namely when the pressure sensor is subjected to certain pressure, the contact area of the conductive material with the upper sandwich structure and the lower sandwich structure is changed, and finally the resistance of a pressure sensor device is changed; piezoresistive pressure sensors are mainly characterized by the fact that the resistance of the conductive path of a conductor changes with pressure.
The second type, capacitive pressure sensor, (Cohen D J, Mitra D, Peterson K, et al. A high purity, capacitive strain gauge based on capacitive nanotube networks [ J ]. Nano letters, 2012, 12(4): 1821-; when the pressure sensing device is subjected to certain pressure, the capacitance value of the capacitor is changed to a certain degree, and the magnitude of the applied pressure is indirectly reflected by measuring the variation of the capacitance value; the main factors affecting the sensitivity of the pressure sensing device are the elasticity, dielectric constant, etc. of the dielectric layer.
The third category, piezoelectric pressure sensors, (hu dong, liu jin cheng, complementary wave, etc.. sensors and detection technologies [ M ]. beijing, mechanical industry press, 2013.) reflect the pressure mainly by measuring the change in the potential at the two ends of the pressure sensing device when a certain pressure is applied; when the pressure sensing device is subjected to a certain external force, the piezoelectric material in the device deforms to a certain extent, at the moment, certain positive charges and negative charges are accumulated at two ends of the piezoelectric material along the pressure direction, and the charge distribution in the piezoelectric material returns to the initial state after the external force is removed, so that the magnitude of the applied pressure is reflected by measuring the magnitude of the potential change at the two ends of the pressure sensing device.
Generally, for evaluating the performance of a pressure sensing device, it is mainly embodied by testing the following performance parameters, which are respectively: sensitivity, dynamic range, response time and stability.
However, as an electronic device which needs to be capable of rapidly and accurately identifying external tiny pressure and then converting the force change into an electric signal for output, how to greatly improve the sensitivity of the electronic device and simultaneously maintain the cycling stability of the electronic device is a critical problem which is troubling both domestic and foreign scholars.
Disclosure of Invention
In view of the above, the present invention aims to provide a pressure sensor with high sensitivity and capable of maintaining device cycling stability and a manufacturing method thereof, so as to meet the increasing demands in the application field of the pressure sensor.
In order to achieve the purpose, the invention adopts the following technical scheme:
a pressure sensor comprises a first electrode plate and a second electrode plate which are oppositely arranged, wherein the first electrode plate comprises a first substrate and metal interdigital electrodes arranged on the first substrate, and the surfaces of the metal interdigital electrodes are formed into rough surfaces; the second electrode plate comprises a second substrate with a microstructure array on one side surface and a composite metal layer covered on the microstructure array; and the composite metal layer and the rough surface are mutually butted and connected.
Specifically, the surface roughness of the rough surface is 5-10 μm.
Specifically, in the metal interdigital electrode, the length of each sub-electrode is 10-20 mm, the width of each sub-electrode is 0.10-0.12 mm, and the center distance between every two adjacent sub-electrodes is 0.10-0.12 mm.
Specifically, the thickness of the second substrate is 1-2 mm, the height of the microstructure array is 5-7 μm, and the center distance between two adjacent microstructures is 5-10 μm.
Specifically, the microstructure array comprises a plurality of microstructures with different heights, and each microstructure is in a truncated cone shape.
Specifically, the first substrate is a rigid substrate or a flexible substrate, and the second substrate is made of PDMS.
Specifically, the composite metal layer comprises a first metal layer and a second metal layer which are arranged in a laminated manner, wherein the second metal layer is in mutual interference connection with the rough surface.
Specifically, the material of the first metal layer is chromium, nickel or titanium, and the material of the second metal layer is gold or silver.
Specifically, the thickness of the first metal layer is 5-10 nm, and the thickness of the second metal layer is 90-100 nm.
The invention also provides a preparation method of the pressure sensor, which comprises the following steps:
preparation of a first electrode plate comprising: providing a first substrate, preparing and forming a metal thin film layer with a rough surface on the first substrate by using an electrochemical deposition process, and etching the metal thin film layer by using an etching process to form a metal interdigital electrode with the rough surface;
preparing a second electrode plate, comprising: preparing and forming a second substrate with a microstructure array on one side surface by using an etching process or a reverse mold process, and depositing a composite metal layer on the surface of the microstructure array of the second substrate;
and arranging the second electrode plate on the first electrode plate in a laminated manner to obtain the pressure sensor.
In the pressure sensor provided in the embodiment of the present invention, the surface of the first electrode plate is formed as a rough surface, the surface of the second electrode plate is formed with a microstructure array, and the contact between the electrode structure of the rough surface and the electrode structure of the microstructure array under a certain pressure can be divided into four processes: the pressure sensor is sequentially point contact, point saturation, surface contact and surface saturation, so that slight change of the external pressure in a low range can cause rapid increase of a contact point, so that the sensitivity and the dynamic range of the pressure sensor can be remarkably increased, and the cycling stability of the pressure sensor can be maintained. In addition, the pressure sensor has a simple structure and low difficulty in the preparation process, and is easy for large-scale production.
Drawings
FIG. 1 is a schematic structural diagram of a pressure sensor in accordance with an embodiment of the present invention;
fig. 2 is a schematic structural view of the first electrode plate in the embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a second electrode plate in an embodiment of the present invention;
fig. 4 is a top view of a metal interdigital electrode in an embodiment of the present invention;
fig. 5a to 5g are schematic diagrams of device structures obtained by respective process steps in a method for manufacturing a pressure sensor according to an embodiment of the present invention;
FIG. 6 is a graph of an electrical test of a pressure sensor in accordance with an embodiment of the present invention;
FIG. 7 is a graph of a cycle stability test of a pressure sensor according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in the drawings and described in accordance with the drawings are exemplary only, and the invention is not limited to these embodiments.
The present embodiment firstly provides a pressure sensor, as shown in fig. 1, the pressure sensor includes a first electrode plate 10 and a second electrode plate 20, and the first electrode plate 10 and the second electrode plate 20 are oppositely disposed.
Referring to fig. 1 to 3, the first electrode plate 10 includes a first substrate 11 and metal inter-digital electrodes 12 disposed on the first substrate 11, wherein a surface of each sub-electrode 12a of the metal inter-digital electrodes 12 is formed as a rough surface 13. The second electrode plate 20 includes a second substrate 21 having an array of microstructures 21a on one surface thereof, and a composite metal layer 22 covering the array of microstructures 21 a. Wherein the clad metal layer 22 and the rough surface 13 are connected with each other in an interference manner.
Wherein, the first substrate 11 can be selected to be a rigid substrate or a flexible substrate: specifically, the rigid substrate can be made of a metal material with poor conductivity, and can also be made of simple and easy materials such as glass, ceramics, quartz and the like; the flexible substrate may employ an organic polymer such as PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PI (polyimide), or the like. The material of the second substrate 21 may be selected to be PDMS (polydimethylsiloxane).
In the embodiment, the rough surface 13 on the metal interdigital electrode 12 has a surface roughness of 5 to 10 μm. The metal interdigital electrode 12 can be made of gold or silver, a gold or silver metal thin film layer with a rough surface is prepared and formed on the first substrate by an electrochemical deposition process, and the gold or silver metal thin film layer is etched by an etching process to form the metal interdigital electrode 12 with the rough surface 13.
In the present embodiment, referring to fig. 2 and fig. 4, each sub-electrode 12a in the interdigital electrode 12 has a length L1 of 10 to 20mm, a width D1 of 0.10 to 0.12mm, and a center-to-center distance H1 between two adjacent sub-electrodes 12a is 0.10 to 0.12 mm.
In the present embodiment, referring to fig. 3, the thickness H2 of the second substrate 21 is 1 to 2mm, the height H3 of the array of microstructures 21a is 5 to 7 μm, and the distance H4 between two adjacent microstructures 21a is 5 to 10 μm. Furthermore, in the embodiment, the microstructures 21a on the second substrate 21 are in a truncated cone-shaped structure, the radius of the upper surface is 2 to 3 μm, the radius of the lower surface is 6 to 8 μm, and the microstructure 21a array includes a plurality of microstructures 21a with different heights. In other embodiments, all the microstructures 21a in the array of microstructures 21a may be arranged to have the same height.
In this embodiment, referring to fig. 3 in combination with fig. 1, the composite metal layer 22 includes a first metal layer 22a and a second metal layer 22b, which are stacked, wherein the second metal layer 22b is in interference connection with the rough surface 13. The material of the first metal layer 22a is chromium (Cr), and the material of the second metal layer 22b is gold (Au). In some other embodiments, the material of the first metal layer 22a may also be selected to be nickel (Ni) or titanium (Ti), and the material of the second metal layer 22b may also be selected to be silver (Ag).
Further, in the present embodiment, the thickness of the first metal layer 22a is 5 to 10nm, and the thickness of the second metal layer 122b is 90 to 100 nm.
The pressure sensor provided by the above embodiment has high sensitivity, can maintain the device cycling stability, and can meet the increasing demands in the application field of the pressure sensor.
The present embodiment further provides a method for manufacturing a pressure sensor as described above, with reference to fig. 5a to 5g and with reference to fig. 1, the method for manufacturing a pressure sensor includes:
step one, preparation of the first electrode plate 10. The method specifically comprises the following steps:
s11, referring to fig. 5a, a first substrate 11 is provided, and an electrochemical deposition process is applied to deposit a metal thin film layer 120 on the first substrate 11. In this embodiment, the material of the metal thin film layer 120 is gold (Au), and the specific parameters of the electrochemical deposition process are controlled to form the surface of the Au thin film layer 120 into the rough surface 130. Specifically, the thickness of the gold thin film layer 120 may be selected to be 3 to 7 μm, and the surface roughness of the rough surface 130 is 5 to 10 μm. In another embodiment, the material of the metal thin film layer 120 may also be gold (Ag).
S12, referring to fig. 5b, etching the metal thin film layer 120 by using an etching process to form the interdigital electrode 12, wherein the surface of each sub-electrode 12a of the interdigital electrode 12 is formed as a rough surface 13, thereby preparing and obtaining the first electrode plate 10.
Step two, preparation of the second electrode plate 20. The method specifically comprises the following steps:
and S21, preparing and forming the second substrate 21 with the microstructure 21a array on one side surface by applying an etching process or a reverse mould process.
In this embodiment, the material of the second substrate 21 is selected to be PDMS, and is formed by a reverse mold process. The method comprises the following specific steps:
s211, referring to FIG. 5c, firstly, ultrasonically cleaning the glass substrate 30 (or other rigid substrates) by using detergent powder, ethanol and deionized water in sequence, and then drying the glass substrate by using a nitrogen gun; then, a photoresist layer is spin-coated on the glass substrate 30, and then the photoresist layer is subjected to exposure and development processes, so that a photoresist film plate 40 is prepared on the glass substrate 30, wherein an array of holes 41 is formed in the photoresist film plate 40.
Specifically, in the present embodiment, the specification of the glass substrate 30 is 5cm long by 5cm wide by 2mm thick, and the glass substrate is ultrasonically cleaned by detergent powder, ethanol and deionized water in sequence, then dried by a nitrogen gun, and then left to stand for ten minutes; the positive photoresist is spin-coated on the glass substrate 30, specifically, the glass substrate is spin-coated at 500 rpm for 10s, then spin-coated at 3000 rpm for 30s, then pre-baked at 120 ℃ for 6min, exposed to light for 8s in a photo-etching machine, then post-baked at 120 ℃ for 3min, and developed in a developing solution for 3min, and finally hard-baked at 100 ℃ for 5min after the exposed photoresist is rinsed with deionized water, thereby preparing the photoresist membrane 40 with the hole 41 array.
S212, referring to fig. 5d, mixing and stirring the PDMS precursor and the curing agent to obtain a mixed solution; placing the mixed solution in a vacuum drying box, and removing bubbles in the mixed solution; the above mixed solution was spin-coated on the photoresist film 40 with a spin coater, and then placed on a heating stage and heated to obtain a PDMS cured layer 50.
Specifically, the weight ratio of the PDMS precursor to the curing agent can be selected to be 9-11: 1, preferably 10: 1; the mixing and stirring can adopt magnetic stirring, and the stirring time can be about 15 min; the standing time in the vacuum drying oven can be selected to be about 30 min; the spin coating speed can be selected to be 400r/min, and the time can be selected to be 30 s; the heating and curing temperature can be selected to be 75-85 ℃, and the heating and curing time can be selected to be 2 hours.
In this embodiment, an electronic balance is used to accurately weigh 15g of PDMS precursor and 1.5g of curing agent in a 100ml beaker, magnetic stirring is performed for 15min after a magneton is placed, a uniform transparent solution is formed, and finally the solution is placed in a drying oven at normal temperature and is pumped to vacuum for about 30min until no bubble can be observed in the solution by naked eyes, and then the mixed solution is spin-coated for 30s at a spin-coating speed of 400 rpm on a spin-coating machine by using the photoresist film plate 40 as a substrate, and is heated and cured for 2 hours at 75-85 ℃ after standing for ten minutes in air, so that the PDMS cured layer 50 is prepared on the photoresist film plate 40.
S213, referring to fig. 5d and 5e, the glass substrate 30 with the PDMS curing layer 50 formed thereon is immersed in an organic solution such as acetone or propylene glycol methyl ether acetate, and then cleaned in an ultrasonic cleaning machine for about 10min, and the PDMS curing layer 50 is peeled off from the glass substrate 30 by dissolving the photoresist film plate 40, where the peeled PDMS curing layer 50 is the second substrate 21, and a portion of the PDMS curing layer 50 corresponding to the array of holes 41 of the photoresist film plate 40 is formed as an array of microstructures 21a on the second substrate 21.
It should be noted that, by controlling the shape, size, depth and hole pitch of the holes 41 through the exposure and development process in the above step S211, a microstructure array with a corresponding shape can be obtained.
S22, referring to fig. 5f, depositing a composite metal layer 22 on the surface of the array of microstructures 21a of the second substrate 21, thereby preparing to obtain the second electrode plate 20.
In this embodiment, the composite metal layer 22 includes a first metal layer 22a and a second metal layer 22b stacked together. The material of the first metal layer 22a is chromium, and the material of the second metal layer 22b is gold.
Specifically, a chrome plated metal layer 22a may be first evaporated on the array of microstructures 21a of the second substrate 21 using an electron beam evaporation process; and then, evaporating a gold metal layer 22b on the chromium metal layer 22a by adopting a thermal evaporation process, wherein the purity of a gold raw material required for evaporating gold by using the thermal evaporation process is 99.999%.
Step three, referring to fig. 5g, the second electrode plate 20 is stacked on the first electrode plate 10, wherein the composite metal layer 22 and the rough surface 13 are connected in an abutting manner, so as to obtain the pressure sensor shown in fig. 1. Specifically, electrode leads (usually copper wires) are respectively welded to the first electrode plate 10 and the second electrode plate 20, so that a high-sensitivity pressure sensing device similar to a sandwich structure is obtained, and the high-sensitivity pressure sensing device has a relatively wide application prospect in the fields of artificial intelligence, electronic skin and the like.
As a comparative example, the surface of the interdigital electrode 12 in the pressure sensor provided by the above embodiment is set to be a flat surface, under otherwise equivalent conditions. Through testing the sensitivity of the pressure sensor using the rough surface and the pressure sensor using the flat surface, it is found that the sensitivity of the pressure sensor using the interdigital electrode 12 having the rough surface is significantly increased, because when the surface of the interdigital electrode 12 is formed as the rough surface, the contact area of the electrode surface of the microstructure 21a array of the second electrode plate 20 and the rough surface is larger at the same pressure, and thus the sensitivity of the pressure sensor can be improved. Therefore, the pressure sensor provided by the embodiment of the invention greatly improves the sensitivity of the pressure sensor because the surface of the interdigital electrode 12 of the first electrode plate 10 is formed into a rough surface.
As another comparative example, the surface of the second electrode plate 20 in the pressure sensor provided in the above embodiment is set to be a flat surface, with other conditions being equal. After testing the dynamic range and sensitivity of the pressure sensor using the electrode surface of the microstructure array and the flat electrode surface, it is found that the dynamic range and sensitivity of the pressure sensor are significantly increased when the electrode surface of the microstructure array is used as the second electrode plate 20. Thus. Therefore, according to the pressure sensor provided by the embodiment of the invention, the electrode surface of the second electrode plate 20 is formed into the microstructure array, so that the dynamic range and sensitivity of the pressure sensor are improved.
Fig. 6 is a graph of electrical testing of a pressure sensor, in particular a graph relating pressure to current change. Specifically, a constant voltage with the given size of 1V is arranged at two ends of the pressure sensing device, the change curve of the current relative change value to the pressure intensity is finally measured by controlling the size of the applied pressure, and the sensitivity of the pressure sensing device in a low-pressure measuring range (4 Pa-2.2 kPa) is 1368kPa according to the slope of the curve-1And has a wide working range (0.4 Pa-82 kPa).
Fig. 7 is a graph of a cycle stability test curve of the pressure sensor according to the embodiment of the present invention, specifically, a current relative change value versus time response curve obtained by rapid release after a certain pressure (700Pa) is continuously and periodically given, and it can be shown from the graph that the sensing device has good cycle stability and long service life.
In summary, in the pressure sensor provided in the above embodiment, the surface of the first electrode plate is formed as a rough surface, the surface of the second electrode plate is formed with the microstructure array, and the contact between the electrode structure of the rough surface and the electrode structure of the microstructure array under a certain pressure can be divided into four processes: the pressure sensor is sequentially point contact, point saturation, surface contact and surface saturation, so that slight change of the external pressure in a low range can cause rapid increase of a contact point, so that the sensitivity and the dynamic range of the pressure sensor can be remarkably increased, and the cycling stability of the pressure sensor can be maintained. In addition, the pressure sensor has a simple structure and low difficulty in the preparation process, and is easy for large-scale production.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The foregoing is directed to embodiments of the present application and it is noted that numerous modifications and adaptations may be made by those skilled in the art without departing from the principles of the present application and are intended to be within the scope of the present application.
Claims (9)
1. A pressure sensor includes a first electrode plate and a second electrode plate which are oppositely arranged, wherein the first electrode plate includes a first substrate and a metal interdigital electrode arranged on the first substrate, and the surface of the metal interdigital electrode is formed as a rough surface; the second electrode plate comprises a second substrate with a microstructure array on one side surface and a composite metal layer covered on the microstructure array; the composite metal layer and the rough surface are mutually butted and connected;
wherein the surface roughness of the rough surface is 5-10 μm.
2. The pressure sensor according to claim 1, wherein each of the metal interdigital electrodes has a length of 10-20 mm and a width of 0.10-0.12 mm, and the center-to-center distance between two adjacent sub-electrodes is 0.10-0.12 mm.
3. The pressure sensor according to claim 1, wherein the thickness of the second substrate is 1-2 mm, the height of the microstructure array is 5-7 μm, and the center-to-center distance between two adjacent microstructures is 5-10 μm.
4. The pressure sensor of claim 1, wherein the microstructure array comprises a plurality of microstructures with different heights, and each microstructure is in the shape of a truncated cone.
5. The pressure sensor of claim 1, wherein the first substrate is a rigid substrate or a flexible substrate and the material of the second substrate is PDMS.
6. A pressure sensor according to any of claims 1-5, wherein the composite metal layer comprises a first metal layer and a second metal layer arranged in a stack, wherein the second metal layer is in interference contact with the roughened surface.
7. The pressure sensor of claim 6, wherein the material of the first metal layer is chromium or nickel or titanium and the material of the second metal layer is gold or silver.
8. The pressure sensor according to claim 6, wherein the first metal layer has a thickness of 5 to 10nm, and the second metal layer has a thickness of 90 to 100 nm.
9. A method of making a pressure sensor according to any of claims 1-8, comprising:
preparation of a first electrode plate comprising: providing a first substrate, preparing and forming a metal thin film layer with a rough surface on the first substrate by using an electrochemical deposition process, and etching the metal thin film layer by using an etching process to form a metal interdigital electrode with the rough surface;
preparing a second electrode plate, comprising: preparing and forming a second substrate with a microstructure array on one side surface by using an etching process or a reverse mold process, and depositing a composite metal layer on the surface of the microstructure array of the second substrate;
and arranging the second electrode plate on the first electrode plate in a laminated manner to obtain the pressure sensor.
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| CN109556768B (en) * | 2018-12-03 | 2020-10-23 | 深圳先进技术研究院 | Pressure sensor and preparation method thereof |
| CN110174195A (en) * | 2019-04-12 | 2019-08-27 | 浙江工业大学 | A kind of Bionic flexible pressure sensor |
| CN110118624A (en) * | 2019-04-29 | 2019-08-13 | 深圳先进技术研究院 | A kind of pressure sensor and preparation method thereof |
| CN110207867B (en) * | 2019-05-10 | 2021-01-26 | 复旦大学 | Graphene pressure sensor and structure and preparation method thereof |
| CN110608825B (en) * | 2019-09-12 | 2021-08-20 | 复旦大学 | Flexible pressure sensor based on polyimide substrate microstructure and preparation method thereof |
| CN110579295A (en) * | 2019-09-16 | 2019-12-17 | 深圳先进技术研究院 | Pressure sensor and method for manufacturing the same |
| CN111060238A (en) * | 2019-12-26 | 2020-04-24 | 浙江清华柔性电子技术研究院 | Resistance type flexible pressure sensor and preparation method thereof |
| CN113125065B (en) * | 2021-03-30 | 2023-05-02 | 苏州大学 | Flexible three-dimensional force sensor and preparation method thereof |
| CN114001845A (en) * | 2021-10-22 | 2022-02-01 | 北京航空航天大学杭州创新研究院 | Preparation method of force-sensitive sensor based on high-density microstructure array electrode |
| CN114199424A (en) * | 2021-11-29 | 2022-03-18 | 江苏大学 | Piezoresistive sensor and preparation process thereof |
| CN116367587A (en) * | 2021-12-23 | 2023-06-30 | Tcl科技集团股份有限公司 | Light emitting diode and preparation method thereof |
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| CN104374498A (en) * | 2013-08-16 | 2015-02-25 | 纳米新能源（唐山）有限责任公司 | Pressure sensor based on friction power generation and pressure sensing system |
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| CN205691269U (en) * | 2016-06-27 | 2016-11-16 | 华北理工大学 | The height soft elastic electron skin measured for contact pressure |
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| CN107907251A (en) * | 2017-10-27 | 2018-04-13 | 深圳先进技术研究院 | Pressure sensor and preparation method thereof |
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| CN108871629A (en) * | 2018-07-20 | 2018-11-23 | 浙江大学 | A kind of flexible resistive array of pressure sensors and preparation method thereof |
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| CN109556768A (en) | 2019-04-02 |
| WO2020114366A1 (en) | 2020-06-11 |
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