WO2020062215A1 - Dispositif de détection de contrainte et système de matrice de détection de contrainte - Google Patents

Dispositif de détection de contrainte et système de matrice de détection de contrainte Download PDF

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Publication number
WO2020062215A1
WO2020062215A1 PCT/CN2018/109016 CN2018109016W WO2020062215A1 WO 2020062215 A1 WO2020062215 A1 WO 2020062215A1 CN 2018109016 W CN2018109016 W CN 2018109016W WO 2020062215 A1 WO2020062215 A1 WO 2020062215A1
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WO
WIPO (PCT)
Prior art keywords
material sheet
layered material
dimensional layered
stress
stress detection
Prior art date
Application number
PCT/CN2018/109016
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English (en)
Chinese (zh)
Inventor
闫培光
陈浩
尹金德
邢凤飞
Original Assignee
深圳大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳大学 filed Critical 深圳大学
Priority to PCT/CN2018/109016 priority Critical patent/WO2020062215A1/fr
Publication of WO2020062215A1 publication Critical patent/WO2020062215A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress

Definitions

  • the invention relates to the technical field of stress detection, in particular to a stress detection device and a stress detection matrix system.
  • Stress detection is widely used in people's daily life. Among them, it has a wide range of applications in biomedicine, instrument erection, seal testing, automotive, ergonomics, and packaging sealing, and brings great economic value.
  • the stress detection equipment on the market is usually prepared by the principle of optical sensing or mechanical stress detection.
  • the stress signal is converted into an electrical signal for detection.
  • Common stress detection devices include strain gauges, variable capacitors, and piezoelectric devices. These types of detection devices have complex structures and low sensitivity, and because of their large size, it is difficult to accurately measure stress in the micron range.
  • the main purpose of the present invention is to provide a stress detection device and a stress detection matrix system, which aim to solve the technical problem that the stress detection device in the prior art has low sensitivity, large volume, and difficulty in accurately measuring the stress in the micron region.
  • a first aspect of the present invention provides a stress detection device, which includes a silicon substrate and a detection component, the silicon substrate is provided with a groove, and the detection component includes a flexible substrate and a two-dimensional layered structure.
  • Material sheet and detection circuit
  • the two-dimensional layered material sheet is disposed on a designated surface of the flexible substrate, the two-dimensional layered material sheet is attached to the surface of the silicon substrate, and the two-dimensional layered material sheet is in contact with the surface of the silicon substrate.
  • the grooves are combined to form a cavity;
  • Electrodes are provided on both sides of the groove, and the detection circuit is electrically connected to the electrodes.
  • the two-dimensional layered material sheet and the electrode are in an ohmic contact relationship.
  • the flexible substrate is a high molecular organic polymer
  • the high molecular organic polymer includes at least one of polymethyl methacrylate, polyvinyl alcohol, and polydimethylsiloxane.
  • the two-dimensional layered material sheet includes at least one of transition metal sulfide and black phosphorus.
  • the detection circuit includes a driving circuit for applying a bias voltage to the two-dimensional layered material sheet.
  • the detection circuit further includes an electrical signal amplification circuit and a stress detection circuit, the electrical signal amplification circuit is used to amplify the electrical signal generated in the two-dimensional layered material sheet, and the stress detection circuit is used to detect The amplified electrical signal in the two-dimensional layered material sheet.
  • the groove is processed on the surface of the silicon substrate by means of electron beam exposure or double beam etching.
  • the thickness of the flexible substrate is 10 ⁇ m to 30 ⁇ m.
  • the second aspect of the present invention provides a stress detection matrix system, which includes a substrate and a plurality of stress detection devices, and the plurality of stress detection devices are arranged in a preset arrangement manner. A surface of the substrate;
  • the stress detection device is a stress detection device provided by the first aspect of the present invention.
  • the stress detection device sets a two-dimensional layered material sheet on the surface of a flexible substrate, and then attaches the two-dimensional layered material sheet to silicon.
  • the surface of the substrate forms a cavity with the groove in the silicon substrate.
  • the electrical characteristics of the two-dimensional layered material sheet will be changed. Therefore, by measuring the change of the electrical signal in the two-dimensional layered material sheet, the magnitude of the external stress can be measured indirectly, and because the two-dimensional layered material is very sensitive to external forces, the measurement results will have higher sensitivity and accuracy. degree.
  • the structure of the above device is relatively simple, and the sizes of the silicon substrate and the detection component can be selected according to requirements, so it can also be applied to stress measurement in the micron-scale area.
  • FIG. 1 is a schematic cross-sectional view of a stress detection device according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of a three-dimensional structure of a stress detection device according to an embodiment of the present invention
  • FIG. 3 is a schematic structural diagram of a stress detection matrix system according to an embodiment of the present invention.
  • FIG. 1 is a schematic cross-sectional view of a stress detection device according to an embodiment of the present invention.
  • the above device includes a silicon substrate 10 and a detection component.
  • the silicon substrate 10 is provided with a groove 11 and the detection component includes The flexible substrate 21, the two-dimensional layered material sheet 22, and the detection circuit.
  • the two-dimensional layered material sheet 22 is disposed on the surface of the flexible substrate 21, the two-dimensional layered material sheet 22 is attached to the surface of the silicon substrate 10, and the two-dimensional layered material sheet 22 is combined with the groove 11 to form A cavity; electrodes 12 are provided on both sides of the groove 11, and a detection circuit is electrically connected to the electrodes 12.
  • the two-dimensional layered material sheet 22 and the electrode 12 are in an ohmic contact relationship and have a low impedance.
  • FIG. 2 is a schematic diagram of the three-dimensional structure of the stress detection device in the embodiment of the present invention.
  • the flexible substrate 21 is a high molecular organic polymer, which includes at least one of polymethyl methacrylate, polyvinyl alcohol, and polydimethylsiloxane, and has flexibility and bendability, and high tensile strength. Tensile strength and strong fatigue resistance.
  • the thickness of the substrate 102 is 10 ⁇ m ⁇ 30 ⁇ m.
  • the method for preparing the flexible substrate 21 includes the following steps:
  • Step 1 Dissolve the high molecular organic polymer powder in a specific solvent to obtain a solution based on the high molecular organic polymer;
  • Step 2 Select an appropriate amount of the high molecular organic polymer solution in a vessel and dry it in a drying box to obtain a corresponding film, which can be used as the flexible substrate 21.
  • the two-dimensional layered material sheet 22 includes at least one of transition metal sulfide and black phosphorus, wherein the transition metal sulfide is molybdenum disulfide, tungsten disulfide, tungsten diselenide, molybdenum diselenide, and diselenide. At least one of zirconium oxide, zirconium disulfide, tin disulfide, tin diselenide, tungsten ditelluride, molybdenum ditelluride, hafnium disulfide, hafnium diselenide, hafnium diselenide, hafnium disulfide and indium selenide One.
  • the two-dimensional layered material sheet 22 can be grown by a chemical vapor deposition method or a mechanical peeling method to obtain a single layer and few layers with a large area and high quality.
  • the two-dimensional layered material sheet 22 is a semiconductor material and has a stress-tunable electronic energy band characteristic.
  • the large-area single-layer or few-layer two-dimensional layered material sheet 22 is transferred to the surface of the flexible substrate 21, and the flexible substrate 21 is subjected to the stress of the external environment to cause surface deformation, so that the two-dimensional layered material sheet 22 surfaces provide corresponding stress effects.
  • the two-dimensional layered material sheet 22 is subjected to indirect stress, the material is prevented from directly contacting the external environment, and the service life of the two-dimensional layered material sheet 22 can be effectively improved.
  • the flexible substrate 21, as a carrier of the two-dimensional layered material sheet 22, can make the two-dimensional layered material sheet 22 evenly adhere to the surface of the silicon substrate 10, and also has high anti-fatigue performance, which further increases The mechanical strength of the two-dimensional layered material sheet 22 itself.
  • the electrode 12 is deposited from both sides of the groove 11 by thermal evaporation or magnetron sputtering, and is used to apply a bias voltage to the two-dimensional layered material sheet 22, and to magnify and detect the two-dimensional layer.
  • the current signal of the sheet-like material piece 22 itself is used to realize the measurement of the external stress change.
  • the above-mentioned detection circuit includes a driving circuit for applying a bias voltage to the two-dimensional layered material sheet 22.
  • the detection circuit also includes an electric signal amplification circuit and a stress detection circuit.
  • the electric signal amplification circuit is used to amplify the current signal generated in the two-dimensional layered material sheet 22, and the stress detection circuit detects the amplified circuit signal.
  • the change of the circuit signal can determine the stress to which the two-dimensional layered material sheet 22 is subjected.
  • the groove 11 is processed on the surface of the silicon substrate 10 by means of electron beam exposure or double beam etching. Specifically, the width of the groove 11 is 10 ⁇ m to 50 ⁇ m, and the length is 50 ⁇ m. -100 ⁇ m, height 5 ⁇ m -20 ⁇ m.
  • the groove 11 serves as a device for suspending the two-dimensional layered material sheet 22, which can cause the surface of the two-dimensional layered material sheet 22 to bend when subjected to stress, thereby changing the electrical characteristics of the two-dimensional layered material sheet 22. By detecting the change of the electrical signal in the two-dimensional layered material sheet 22, the stress to which the two-dimensional layered material sheet 22 is subjected can be obtained.
  • the stress detection device Compared with the prior art, the stress detection device provided by the embodiment of the present invention sets a two-dimensional layered material sheet on the surface of a flexible substrate, and then covers the surface of the silicon substrate and the recesses in the silicon substrate. The groove forms a cavity. Because the external stress causes the two-dimensional layered material sheet to be deformed in a suspended area, the electrical characteristics of the two-dimensional layered material sheet are changed. Therefore, the electrical signal in the two-dimensional layered material sheet is measured. Can be used to indirectly measure the magnitude of external stress, and because the two-dimensional layered material is very sensitive to external forces, the measurement result will have higher sensitivity and accuracy. At the same time, the structure of the above device is relatively simple, and the sizes of the silicon substrate and the detection component can be selected according to requirements, so it can also be applied to stress measurement in the micron-scale area.
  • FIG. 3 is a schematic structural diagram of a stress detection matrix system according to an embodiment of the present invention.
  • the foregoing stress detection matrix system includes a substrate 301 and a plurality of stress detection devices 302. The arrangement is arranged on the surface of the substrate 301.
  • the stress detection device 302 is a stress detection device provided by the foregoing embodiment of the present invention. For details, refer to the foregoing embodiment, and details are not described herein again.
  • each stress detection device 302 in the matrix system can independently detect the corresponding stress effect. Therefore, the matrix system can achieve accurate measurement of the stress distribution.
  • the measurement accuracy depends on the size of the stress detection device 302, and the detection range is on the order of micrometers.
  • a plurality of stress detection devices 302 are arranged on a substrate 301 in a matrix arrangement manner, and the stress detected by each stress detection device 302 is processed and analyzed to obtain The distribution of stresses in the detected area.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)

Abstract

La présente invention concerne un dispositif de détection de contrainte et un système de matrice de détection de contrainte Le dispositif de détection de contrainte comprend : un substrat en silicium (10) et un ensemble de détection, le substrat en silicium (10) étant pourvu d'une rainure (11); l'ensemble de détection comprend un substrat flexible (11), une feuille de matériau stratifié bidimensionnel (22) et un circuit de détection; la feuille de matériau stratifié bidimensionnel (22) est disposée sur une surface du substrat flexible (21), la feuille de matériau stratifié bidimensionnel (22) est fixée à une surface du substrat en silicium (10), et la feuille de matériau stratifié bidimensionnel (22) est jointe à la rainure (11) pour former une cavité; et deux côtés de la rainure (11) sont pourvus d'électrodes (12), et le circuit de détection est électriquement connecté aux électrodes (12). Le dispositif de détection de contrainte peut mesurer indirectement l'intensité d'une contrainte externe en mesurant le changement de signal électrique dans la feuille de matériau stratifié bidimensionnel (22), et le résultat de mesure est plus précis. Le dispositif possède également une structure simple, et la taille du substrat en silicium (10) et la taille de l'ensemble de détection peuvent être sélectionnées en fonction des exigences, de telle sorte que le dispositif peut également être appliqué à une mesure de contrainte d'une région de taille micrométrique.
PCT/CN2018/109016 2018-09-30 2018-09-30 Dispositif de détection de contrainte et système de matrice de détection de contrainte WO2020062215A1 (fr)

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PCT/CN2018/109016 WO2020062215A1 (fr) 2018-09-30 2018-09-30 Dispositif de détection de contrainte et système de matrice de détection de contrainte

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WO2020062215A1 true WO2020062215A1 (fr) 2020-04-02

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102539029A (zh) * 2012-02-29 2012-07-04 上海交通大学 基于柔性mems技术的三维流体应力传感器及其阵列
US20150020610A1 (en) * 2013-07-18 2015-01-22 Kulite Semiconductor Products, Inc. Two dimensional material-based pressure sensor
CN104596683A (zh) * 2015-02-12 2015-05-06 南京大学 基于层状材料的压力传感器及压电效应测量系统
CN105486435A (zh) * 2016-01-04 2016-04-13 沈阳化工大学 一种mems多晶硅纳米膜压力传感器芯片及其制作方法
CN105509932A (zh) * 2014-10-10 2016-04-20 意法半导体股份有限公司 压力传感器与测试器件以及相关方法
CN106441645A (zh) * 2016-09-29 2017-02-22 中国科学院重庆绿色智能技术研究院 一种石墨烯压力传感器阵列系统及其制备方法
CN108195492A (zh) * 2018-01-19 2018-06-22 上海电力学院 利用二维相变材料制备的超灵敏应力传感器

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102539029A (zh) * 2012-02-29 2012-07-04 上海交通大学 基于柔性mems技术的三维流体应力传感器及其阵列
US20150020610A1 (en) * 2013-07-18 2015-01-22 Kulite Semiconductor Products, Inc. Two dimensional material-based pressure sensor
CN105509932A (zh) * 2014-10-10 2016-04-20 意法半导体股份有限公司 压力传感器与测试器件以及相关方法
CN104596683A (zh) * 2015-02-12 2015-05-06 南京大学 基于层状材料的压力传感器及压电效应测量系统
CN105486435A (zh) * 2016-01-04 2016-04-13 沈阳化工大学 一种mems多晶硅纳米膜压力传感器芯片及其制作方法
CN106441645A (zh) * 2016-09-29 2017-02-22 中国科学院重庆绿色智能技术研究院 一种石墨烯压力传感器阵列系统及其制备方法
CN108195492A (zh) * 2018-01-19 2018-06-22 上海电力学院 利用二维相变材料制备的超灵敏应力传感器

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