WO2020054504A1 - 処理システム及び処理方法 - Google Patents

処理システム及び処理方法 Download PDF

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Publication number
WO2020054504A1
WO2020054504A1 PCT/JP2019/034563 JP2019034563W WO2020054504A1 WO 2020054504 A1 WO2020054504 A1 WO 2020054504A1 JP 2019034563 W JP2019034563 W JP 2019034563W WO 2020054504 A1 WO2020054504 A1 WO 2020054504A1
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Prior art keywords
processing
laser
wafer
internal surface
modified layer
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PCT/JP2019/034563
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English (en)
French (fr)
Japanese (ja)
Inventor
隼斗 田之上
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東京エレクトロン株式会社
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Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to KR1020217010222A priority Critical patent/KR102629529B1/ko
Priority to JP2020545938A priority patent/JP7133633B2/ja
Priority to CN201980056207.1A priority patent/CN112638573B/zh
Publication of WO2020054504A1 publication Critical patent/WO2020054504A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • B23K26/703—Cooling arrangements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices

Definitions

  • the present disclosure relates to a processing system and a processing method.
  • Patent Document 1 discloses a method for manufacturing a stacked semiconductor device.
  • this manufacturing method two or more semiconductor wafers are stacked to manufacture a stacked semiconductor device.
  • the back surface is ground to have a desired thickness.
  • the technology according to the present disclosure efficiently thins the object to be processed.
  • One embodiment of the present disclosure is a processing system that processes a processing target, wherein a reforming apparatus that forms an internal surface modification layer in a surface direction inside the processing target and a base point that is based on the internal surface modification layer
  • a separation device for separating the object to be processed wherein the reforming device irradiates a plurality of laser beams to the inside of the object to be processed, a laser irradiation unit, and the laser irradiation unit and the object to be processed.
  • a moving mechanism for relatively moving the plurality of laser beams from the laser irradiation unit with respect to the object to be processed by the moving mechanism, the inner surface modified layer
  • the object to be processed can be efficiently thinned.
  • FIG. 1 is a plan view schematically showing an outline of a configuration of a wafer processing system according to an embodiment. It is a side view which shows the outline of a structure of a superposition wafer. It is a side view which shows the outline of a part of structure of a superposition wafer. It is a side view which shows the outline of a structure of a reformer. It is a side view which shows the outline of a structure of a separation apparatus. It is a flowchart which shows the main process of the wafer processing concerning this embodiment.
  • FIG. 4 is an explanatory diagram of main steps of wafer processing according to the embodiment.
  • a back surface of a semiconductor wafer (hereinafter, referred to as a wafer) having a plurality of devices such as electronic circuits formed on a front surface, as in a method disclosed in Patent Document 1, is described.
  • a wafer is thinned by grinding.
  • the grinding of the back surface of the wafer is performed, for example, by rotating the wafer and the grinding wheel, respectively, and lowering the grinding wheel while the grinding wheel is in contact with the back surface.
  • the grinding wheel wears out and requires periodic replacement.
  • grinding water is used, and a waste liquid treatment is also required. For this reason, running costs are incurred. Therefore, there is room for improvement in the conventional wafer thinning process.
  • the peripheral portion of the wafer is chamfered.
  • the peripheral portion of the wafer becomes sharp and sharp (a so-called knife edge shape). Then, chipping occurs at the peripheral portion of the wafer, and the wafer may be damaged. Therefore, so-called edge trimming, in which the peripheral portion of the wafer is removed before the grinding process, is performed.
  • edge trimming in which the peripheral portion of the wafer is removed before the grinding process, is performed.
  • the peripheral portion of the wafer is partially ground or cut to perform the edge trim.
  • FIG. 1 is a plan view schematically showing the outline of the configuration of the wafer processing system 1.
  • a surface bonded to the support wafer S is referred to as a front surface Wa
  • a surface opposite to the front surface Wa is referred to as a back surface Wb.
  • the surface bonded to the processing wafer W is referred to as a front surface Sa
  • the surface opposite to the front surface Sa is referred to as a back surface Sb.
  • the processing wafer W is a semiconductor wafer such as a silicon wafer, for example, and a device layer D including a plurality of devices is formed on a surface Wa. Further, an oxide film Fw, for example, an SiO 2 film (TEOS film) is further formed on the device layer D.
  • the periphery of the processing wafer W is chamfered, and the cross section of the periphery decreases in thickness toward its front end.
  • the support wafer S is a wafer that supports the processing wafer W, and is, for example, a silicon wafer.
  • An oxide film Fs for example, an SiO 2 film (TEOS film) is formed on the surface Sa of the support wafer S.
  • the support wafer S functions as a protective material for protecting devices on the surface Wa of the processing wafer W.
  • a device layer (not shown) is formed on the surface Sa, similarly to the processing wafer W.
  • the device layer D and the oxide films Fw and Fs are not shown in order to avoid complications. Similarly, in other drawings used in the following description, the illustration of the device layer D and the oxide films Fw and Fs may be omitted.
  • the wafer processing system 1 has a configuration in which the carry-in / out station 2 and the processing station 3 are integrally connected.
  • the loading / unloading station 2 is loaded / unloaded with a cassette Ct capable of accommodating, for example, a plurality of overlapped wafers T with the outside.
  • the processing station 3 includes various processing devices that perform desired processing on the overlapped wafer T.
  • the cassette loading table 10 is provided at the loading / unloading station 2.
  • a plurality of, for example, four cassettes Ct can be mounted on the cassette mounting table 10 in a line in the X-axis direction.
  • the number of the cassettes Ct mounted on the cassette mounting table 10 is not limited to the present embodiment, and can be arbitrarily determined.
  • the carry-in / out station 2 is provided with a wafer transfer area 20 adjacent to the cassette mounting table 10.
  • the wafer transfer area 20 is provided with a wafer transfer device 22 movable on a transfer path 21 extending in the X-axis direction.
  • the wafer transfer device 22 has, for example, two transfer arms 23 for holding and transferring the overlapped wafer T.
  • Each transfer arm 23 is configured to be movable in a horizontal direction, a vertical direction, around a horizontal axis, and around a vertical axis. Note that the configuration of the transfer arm 23 is not limited to the present embodiment, and may have any configuration.
  • the processing station 3 is provided with a wafer transfer area 30.
  • the wafer transfer area 30 is provided with a wafer transfer device 32 movable on a transfer path 31 extending in the X-axis direction.
  • the wafer transfer device 32 is configured to be able to transfer the overlapped wafer T to a transition device 34, a reforming device 40, a peripheral edge removing device 41, a separating device 42, a wet etching device 43, and a grinding device 44, which will be described later.
  • the wafer transfer device 32 has, for example, two transfer arms 33, 33 for holding and transferring the overlapped wafer T.
  • Each transfer arm 33 is configured to be movable in a horizontal direction, a vertical direction, around a horizontal axis, and around a vertical axis. Note that the configuration of the transfer arm 33 is not limited to the present embodiment, and may have any configuration.
  • a transition device 34 for transferring the overlapped wafer T is provided between the wafer transfer area 20 and the wafer transfer area 30.
  • the reforming device 40 and the peripheral edge removing device 41 are arranged in this order from the loading / unloading station 2 side in the X-axis direction.
  • a separation device 42 and a wet etching device 43 are arranged in this order from the loading / unloading station 2 side in the X-axis direction.
  • a grinding device 44 is disposed on the X-axis positive direction side of the wafer transfer area 30.
  • the reforming device 40 irradiates the inside of the processing wafer W with a laser beam to form an inner surface reforming layer, a peripheral reforming layer, and a split reforming layer, which will be described later.
  • the reformer 40 has a chuck 50 for holding the overlapped wafer T in a state where the processing wafer W is on the upper side and the support wafer S is disposed on the lower side as shown in FIG.
  • the chuck 50 is configured to be movable in the X-axis direction and the Y-axis direction by the moving unit 51.
  • the moving unit 51 includes a general precision XY stage.
  • the chuck 50 is configured to be rotatable around a vertical axis by a rotating unit 52.
  • a first laser head 60 for forming an internal surface modification layer is provided above the chuck 50 as a laser irradiator that irradiates the inside of the processing wafer W with laser light.
  • the first laser head 60 outputs a high-frequency pulsed laser beam oscillated from a laser light oscillator (not shown) having a wavelength that is transparent to the processing wafer W. And irradiate it at a desired position inside the device. As a result, the portion where the laser light is focused inside the processing wafer W is modified, and an internal surface modified layer is formed.
  • the first laser head 60 irradiates the laser light from the laser light oscillator into a plurality of laser beams at the same time by, for example, a lens.
  • the first laser head 60 is configured to be movable in the X-axis direction and the Y-axis direction by the moving unit 61.
  • the moving unit 61 is configured by a general precision XY stage. Further, the first laser head 60 is configured to be movable in the Z-axis direction by the elevating unit 62.
  • a second laser head 70 as a laser head for modifying the periphery is provided as a laser irradiation unit for irradiating the inside of the processing wafer W with laser light.
  • the second laser head 70 outputs high-frequency pulsed laser light oscillated from a laser light oscillator (not shown), and has a wavelength that is transparent to the processing wafer W. And irradiate it at a desired position inside the device. As a result, the portion where the laser beam is focused inside the processing wafer W is modified, and a peripheral modified layer or a divided modified layer is formed.
  • the second laser head 70 may emit a single-focus laser beam, or may emit a plurality of focal laser beams.
  • the second laser head 70 is configured to be movable in the X-axis direction and the Y-axis direction by the moving unit 71.
  • the moving unit 71 is configured by a general precision XY stage. Further, the second laser head 70 is configured to be movable in the Z-axis direction by the elevating unit 72.
  • the moving unit 51, the rotating unit 52, and the moving unit 61 constitute a moving mechanism according to the present disclosure.
  • the first laser head 60 when moving the first laser head 60 in the horizontal direction, the first laser head 60 may be moved in the horizontal direction relative to the processing wafer W. That is, the processing wafer W may be moved in the horizontal direction.
  • the first laser head 60 When rotating the processing wafer W, the first laser head 60 may be rotated relative to the processing wafer W about the center of the processing wafer W as an axis. That is, the first laser head 60 may be rotated with respect to the processing wafer W.
  • the peripheral edge removing device 41 shown in FIG. 1 removes the peripheral edge of the processing wafer W from the peripheral edge modified layer formed by the reforming device 40 as a base point.
  • the separation device 42 separates the back surface Wb side of the processing wafer W from the internal surface reforming layer formed by the reforming device 40 as a base point.
  • the separation device 42 has a mounting table 80 for holding the overlapped wafer T in a state where the processing wafer W is located on the upper side and the support wafer S is located on the lower side as shown in FIG.
  • a coolant channel 81 is formed as a cooling mechanism.
  • a coolant for example, cooling water or cooling gas is supplied to the coolant channel 81 from a chiller unit (not shown) provided outside the reformer 40.
  • the support wafer S side (the front surface Wa side of the processing wafer W) of the overlapped wafer T mounted on the mounting table 80 is cooled by the refrigerant flowing through the refrigerant channel 81.
  • the cooling mechanism provided inside the mounting table 80 is not limited to the present embodiment, and may be, for example, a Peltier device.
  • a third laser head 90 is provided as a heating mechanism for irradiating the inside of the processing wafer W with laser light.
  • the third laser head 90 converts a high-frequency pulsed laser beam oscillated from a laser beam oscillator (not shown) having a wavelength that is transparent to the processing wafer W into a reforming device. Irradiate the inner surface modified layer formed at 40. Then, the internal surface modification layer is heated. Note that laser light may be continuously oscillated from the third laser head 90.
  • the third laser head 90 may be configured to be movable in the X-axis direction and the Y-axis direction by the moving unit 91.
  • the moving unit 91 includes a general precision XY stage. Further, the third laser head 90 may be configured to be movable in the Z-axis direction by the elevating unit 92.
  • a suction pad 100 that holds the back surface Wb of the processing wafer W by suction is provided.
  • the suction pad 100 is configured to be rotatable around a vertical axis by a rotating unit 101. Further, the suction pad 100 is configured to be movable in the Z-axis direction by the elevating unit 102.
  • the wet etching apparatus 43 shown in FIG. 1 supplies a chemical solution (etching solution) to the back surface Wb of the processing wafer W. Then, the back surface Wb ground by the grinding device 44 is etched. In addition, grinding marks may be formed on the back surface Wb, and the back surface Wb forms a damaged surface.
  • etching solution etching solution
  • HF, HNO 3 , H 3 PO 4 , TMAH, Choline, KOH, or the like is used as the chemical solution, for example.
  • the grinding device 44 grinds the back surface Wb of the processing wafer W. Then, on the back surface Wb on which the internal surface modified layer is formed, the internal surface modified layer is removed, and the peripheral edge modified layer is further removed. Specifically, the grinding device 44 rotates the processing wafer W (the superposed wafer T) and the grinding wheel, and further lowers the grinding wheel while the grinding wheel is in contact with the back surface Wb.
  • the above-described inner surface modified layer and peripheral edge modified layer are damaged layers, and the back surface Wb forms a damaged surface.
  • the control device 110 is provided in the wafer processing system 1 described above.
  • the control device 110 is, for example, a computer and has a program storage unit (not shown).
  • the program storage section stores a program for controlling the processing of the overlapped wafer T in the wafer processing system 1.
  • the program storage unit also stores programs for controlling operations of driving systems such as the above-described various types of processing devices and transfer devices to implement wafer processing described later in the wafer processing system 1.
  • the program may be recorded on a storage medium H that can be read by a computer, and may be installed on the control device 110 from the storage medium H.
  • FIG. 6 is a flowchart showing main steps of wafer processing.
  • the processing wafer W and the supporting wafer S are bonded by van der Waals force and hydrogen bonding (intermolecular force) in a bonding apparatus (not shown) outside the wafer processing system 1, and a superposed wafer is previously formed. T is formed.
  • a cassette Ct containing a plurality of overlapped wafers T is mounted on the cassette mounting table 10 of the loading / unloading station 2.
  • the overlapped wafer T is transferred to and held by the chuck 50. Thereafter, as shown in FIG. 8, the second laser head 70 is moved above the processing wafer W and to the boundary between the peripheral portion We and the central portion Wc of the processing wafer W. Thereafter, while the chuck 50 is rotated by the rotating unit 52, the laser light L is emitted from the second laser head 70 to the inside of the processing wafer W to form the peripheral edge modified layer M1 inside the processing wafer W (FIG. Step A1).
  • the peripheral edge modified layer M1 serves as a base point for removing the peripheral edge We in the edge trim, and as shown in FIGS. 8 and 9, the peripheral edge We and the central portion Wc of the processing target W are removed. It is formed in an annular shape along the boundary.
  • the peripheral edge portion We is, for example, in a range of 1 mm to 5 mm in the radial direction from the outer end of the processing wafer W, and includes a chamfered portion.
  • the peripheral edge modified layer M1 extends in the thickness direction and has a vertically long aspect ratio.
  • the lower end of the peripheral edge modified layer M1 is located above the target surface (the dotted line in FIG. 8) of the processed wafer W after the grinding. That is, the distance H1 between the lower end of the peripheral edge modified layer M1 and the surface Wa of the processed wafer W is larger than the target thickness H2 of the processed wafer W after grinding. In such a case, the peripheral modified layer M1 does not remain on the processed wafer W after the grinding.
  • the crack C1 has further developed from the peripheral edge modified layer M1 inside the processed wafer W, and has reached the front surface Wa and the back surface Wb. Note that a plurality of the peripheral edge modified layers M1 may be formed in the thickness direction.
  • the divided reformed layer M2 is located inside the processing wafer W and radially outside the peripheral reformed layer M1. Is formed (Step A2 in FIG. 6).
  • the split reforming layer M2 also extends in the thickness direction similarly to the peripheral reforming layer M1, and has a vertically long aspect ratio.
  • the crack C2 propagates from the divided modified layer M2 and reaches the front surface Wa and the back surface Wb. Note that a plurality of divided modified layers M2 may also be formed in the thickness direction.
  • one-line divided modified layer extends radially outward from the peripheral modified layer M1.
  • the layer M2 is formed.
  • the divided modified layers M2 of the line extending in the radial direction are formed at eight positions, but the number of the divided modified layers M2 is arbitrary. At least the peripheral edge portion We can be removed if the divided modified layer M2 is formed at two places.
  • the peripheral edge portion We when the peripheral edge portion We is removed in the edge trim, the peripheral edge portion We is divided into a plurality of parts by the divided modified layer M2 while being separated from the annular peripheral modified layer M1 as a base point. Then, the peripheral edge portion We to be removed is fragmented and can be more easily removed.
  • the overlapped wafer T is transferred to the peripheral edge removing device 41 by the wafer transfer device 32.
  • the peripheral edge removing device 41 removes the peripheral edge portion We of the processed wafer W from the peripheral edge modified layer M1 as shown in FIG. 7C (Step A3 in FIG. 6).
  • the peripheral edge removing device 41 removes the peripheral edge portion We by expanding (expanding) the tape 120 as shown in FIG. 10, for example.
  • an expandable tape 120 is attached to the back surface Wb of the processing wafer W as shown in FIG.
  • the tape 120 is expanded in the radial direction of the processing wafer W, and the peripheral edge portion We is separated from the processing wafer W based on the peripheral edge modified layer M1.
  • the peripheral edge portion We is divided into small pieces and separated from the divided modified layer M2.
  • FIG. 10C the tape 120 is lifted and peeled from the processing wafer W to remove the peripheral edge We.
  • a treatment for reducing the adhesive strength of the tape 120 for example, an ultraviolet irradiation treatment may be performed.
  • the method of removing the peripheral edge portion We is not limited to the present embodiment.
  • an air blow or a water jet may be jetted to the peripheral portion We, and the peripheral portion We may be removed by pressing.
  • a jig such as tweezers may be brought into contact with the peripheral edge We to physically remove the peripheral edge We.
  • the overlapped wafer T is transferred again to the reforming device 40 by the wafer transfer device 32.
  • the internal surface reforming layer M3 is formed inside the processing wafer W as shown in FIG. 7D (Step A4 in FIG. 6).
  • the inside of the processing wafer W is irradiated with the laser beam L from the first laser head 60 to form the internal surface modified layer M3.
  • the internal surface modification layer M3 extends in the surface direction and has a horizontally long aspect ratio.
  • the lower end of the internal surface modified layer M3 is located slightly above the target surface (dotted line in FIG. 11) of the processed wafer W after the grinding. That is, the distance H3 between the lower end of the inner surface modified layer M3 and the surface Wa of the processing wafer W is slightly larger than the target thickness H2 of the processing wafer W after grinding.
  • the internal surface modified layer M3 has a vertically long aspect ratio, and the plurality of internal surface modified layers M3 may be arranged with a small pitch. Further, cracks C3 propagate from the inner surface modified layer M3 in the surface direction. Further, when the pitch of the internal surface modification layer M3 is small, the crack C3 may not be provided.
  • a plurality of, for example, nine laser beams L are simultaneously emitted from the first laser head 60, and nine internal surface modification layers M3 are simultaneously formed as shown in FIG. Is done.
  • the first laser head 60 and the overlapped wafer T are relatively moved in the horizontal direction, and the inner surface modified layer M3 is formed in the central portion Wc of the processing wafer W in units of nine.
  • the first laser head 60 is moved in the X-axis direction to form nine internal surface modification layers M3 in a line.
  • FIG. 12B the first laser head 60 is moved in the X-axis direction to form nine internal surface modification layers M3 in a line.
  • the first laser head 60 is shifted in the Y-axis direction, and further, the first laser head 60 is moved in the X-axis direction, so that the nine internal surface modified layers M3 are moved. It is formed in a row.
  • the plurality of inner surface modification layers M3 are formed at the same height.
  • an inner surface modified layer M3 is formed on the entire inner surface in the central portion Wc.
  • the number and arrangement of the laser beams L irradiated simultaneously from the first laser head 60 are not limited to the present embodiment, and can be set arbitrarily.
  • the first laser head 60 may be moved in the horizontal direction while rotating the chuck 50.
  • the internal surface modification layer M3 is formed in a spiral shape in plan view. Then, the pitch of the plurality of internal surface modification layers M3 may be changed in the concentric direction and the radial direction of the processing wafer W.
  • the separation device 42 separates the back surface Wb side (hereinafter, referred to as a back surface wafer Wb1) of the processed wafer W from the internal surface modified layer M3 as a starting point as shown in FIG. 7E (step A5 in FIG. 6).
  • the overlapped wafer T is transferred to and mounted on the mounting table 80 as shown in FIG.
  • the coolant flowing through the coolant channel 81 cools the support wafer S side (the front surface Wa side of the processing wafer W) of the overlapped wafer T.
  • the third laser head 90 is moved above the processing wafer W, and the third laser head 90 irradiates the internal surface modified layer M3 with the laser light L.
  • the third laser head 90 is moved from the peripheral portion to the central portion of the processing wafer W, that is, is moved in the wafer surface, and the entire surface of the internal surface modified layer M3 is irradiated with the laser beam L. Then, the inner surface modified layer M3 is heated.
  • the back surface Wb of the processing wafer W is suction-held by the suction pad 100.
  • the suction pad 100 is rotated, and the back surface wafer Wb1 is cut off at the boundary of the inner surface modified layer M3.
  • the suction pad 100 is lifted while the suction pad 100 holds the back wafer Wb1 by suction, and the back wafer Wb1 is separated from the processing wafer W.
  • the rotation of the suction pad 100 shown in FIG. 13B may be omitted.
  • the overlapped wafer T is transferred to the grinding device 44 by the wafer transfer device 32.
  • the grinding device 44 grinds the rear surface Wb (damaged surface) of the processing wafer W as shown in FIG. 7F, and removes the inner surface modified layer M3 and the peripheral edge modified layer M1 remaining on the rear surface Wb (FIG. Step A6). Specifically, in a state where the grinding wheel is in contact with the back surface Wb, the processing wafer W and the grinding wheel are respectively rotated, and the grinding wheel is further lowered, whereby the back surface Wb is ground. After grinding the back surface Wb in step A6, the back surface Wb may be cleaned before wet etching in step A7 described later. For cleaning the back surface Wb, for example, a brush may be used, or a pressurized cleaning liquid may be used.
  • the overlapped wafer T is transferred to the wet etching device 43 by the wafer transfer device 32.
  • a chemical solution is supplied to the back surface Wb (damaged surface) of the processing wafer W to perform wet etching (Step A7 in FIG. 6). Grinding marks may be formed on the back surface Wb ground by the grinding device 44 described above. In step A7, grinding marks can be removed by wet etching, and the back surface Wb can be smoothed.
  • the overlapped wafer T that has been subjected to all the processes is transferred to the transition device 34 by the wafer transfer device 32, and further transferred to the cassette Ct of the cassette mounting table 10 by the wafer transfer device 22.
  • a series of wafer processing in the wafer processing system 1 ends.
  • the back surface wafer Wb1 is separated based on the internal surface modified layer M3 in step A5.
  • the first laser head 60 itself does not deteriorate with time and the number of consumables is reduced, so that the maintenance frequency can be reduced.
  • the running cost can be reduced.
  • the grinding water does not flow to the support wafer S side, it is possible to suppress the support wafer S from being contaminated.
  • the back surface Wb (damaged surface) is ground in step A6, but this grinding may be performed by removing the inner surface modified layer M3 and the peripheral edge modified layer M1. It is as small as about 10 ⁇ m.
  • the grinding amount is as large as 700 ⁇ m or more, for example, and the degree of wear of the grinding wheel is large. For this reason, in the present embodiment, the maintenance frequency can be reduced as well.
  • the inside of the processing wafer W is simultaneously irradiated with the plurality of laser beams L in the step A4 to form the plurality of internal surface modified layers M3 at the same time. Therefore, the internal surface modified layer M3 can be efficiently formed on the entire internal surface of the processing wafer W, and the time required for the processing in step A4 can be reduced. As a result, the throughput of wafer processing can be improved.
  • the laser beam L is emitted from the third laser head 90 to the internal surface modified layer M3 in step A5 to heat the internal surface modified layer M3. Therefore, a stress difference occurs between the back surface Wb side and the front surface Wa side of the processing wafer W. In addition, since the front surface Wa side of the processing wafer W is cooled, the stress difference becomes large. As a result, the rear wafer Wb1 can be easily separated from the internal surface modified layer M3. In the present embodiment, since the third laser head 90 is moved from the peripheral portion of the processing wafer W to the central portion, the stress acting on the internal surface modified layer M3 acts from the peripheral portion toward the central portion. I do. Therefore, the back wafer Wb1 can be further easily separated.
  • the peripheral portion We is removed starting from the peripheral edge modified layer M1 in step A3. are doing.
  • the peripheral edge portion We is ground or cut, and the grinding wheel is worn and requires periodic replacement.
  • the degree of deterioration of the first laser head 60 itself with time is small, and the maintenance frequency can be reduced.
  • the present disclosure does not exclude edge trimming by grinding.
  • the peripheral edge portion We removed in Step A3 can be fragmented. Therefore, edge trimming can be performed more easily.
  • the formation of the modified peripheral layer M1 in step A1, the formation of the divided modified layer M2 in step A2, and the formation of the internal surface modified layer M3 in step A4 can be performed in the same reforming apparatus 40. Therefore, equipment costs can be reduced.
  • the formation of the peripheral modified layer M1, the formation of the divided modified layer M2, and the formation of the internal surface modified layer M3 may of course be performed by separate apparatuses. For example, when the above-described wafer processing is continuously performed on a plurality of overlapped wafers T, the peripheral edge modified layer M1, the divided modified layer M2, and the internal surface modified layer M3 are formed by separate apparatuses. In addition, the throughput of wafer processing can be improved.
  • the back surface Wb (damaged surface) is ground in step A6 to remove the inner surface modified layer M3 and the peripheral edge modified layer M1, so that the yield of the processed wafer W as a product is improved. be able to.
  • the processing order of steps A1 to A7 can be changed.
  • the order of the removal of the peripheral portion We in Step A3 and the formation of the internal surface modified layer M3 in Step A4 may be changed.
  • the wafer processing is performed in the order of steps A1 to A2, A4, A3, and A5 to A7.
  • the formation of the inner surface modified layer M3 in step A4 may be performed before the formation of the peripheral modified layer M1 in step A1. In such a case, the wafer processing is performed in the order of steps A4, A1 to A3, and A5 to A7.
  • a reforming apparatus 200 is obtained by changing the configuration of the laser irradiation unit from the configuration of the reforming apparatus 40 shown in FIG. That is, the reforming apparatus 200 includes a fourth laser head 210 and a fifth laser head 220 instead of the first laser head 60 as a laser irradiation unit. Then, in the reforming apparatus 40, a plurality of laser beams L are emitted from the first laser head 60. In the reforming apparatus 200, the laser beams L from the fourth laser head 210 and the fifth laser head 220, respectively. Is irradiated.
  • the other configuration of the reforming apparatus 200 is the same as the configuration of the reforming apparatus 40.
  • the fourth laser head 210 and the fifth laser head 220 are respectively provided above the chuck 50.
  • Each of the fourth laser head 210 and the fifth laser head 220 is a high-frequency pulsed laser light L oscillated from a laser light oscillator (not shown) and has transparency to the processing wafer W.
  • the laser beam L having the wavelength is condensed and irradiated on a desired position inside the processing wafer W. As a result, the portion where the laser beam L is condensed inside the processing wafer W is modified, and the internal surface modified layers M4 and M5 described later are formed.
  • the fourth laser head 210 is configured to be movable in the X-axis direction and the Y-axis direction by the moving unit 211.
  • the moving unit 211 includes a general precision XY stage. Further, the fourth laser head 210 is configured to be movable in the Z-axis direction by the elevating unit 212. Similarly, the fifth laser head 220 is configured to be movable in the X-axis direction and the Y-axis direction by the moving unit 221, and is configured to be movable in the Z-axis direction by the elevating unit 222.
  • the fourth laser head 210 is disposed at the upper central portion of the processing wafer W
  • the fifth laser head 220 is disposed at the upper peripheral portion of the processing wafer W, as shown in FIG. That is, the laser heads 210 and 220 are arranged at different positions in the radial direction of the processing wafer W.
  • the inside of the processing wafer W is irradiated with laser light L from the fourth laser head 210 to form the internal surface modified layer M4.
  • the inside of the processing wafer W is irradiated with the laser beam L from the fifth laser head 220 to form the internal surface modified layer M5.
  • the laser heads 210 and 220 and the overlapped wafer T are relatively moved to form internal surface modified layers M4 and M5 inside the central portion Wc of the processing wafer W.
  • the processing wafer W (the overlapped wafer T) is rotated by 360 degrees while irradiating the inside of the processing wafer W with the laser light from each of the laser heads 210 and 220. .
  • annular internal surface modification layers M4 and M5 are simultaneously formed inside the processing wafer W (rotation step).
  • the laser heads 210 and 220 are shifted in the X-axis direction (radial direction) (moving step).
  • the direction in which the laser heads 210 and 220 are shifted may be from the outside to the inside as in the illustrated example, or may be from the inside to the outside.
  • the overlapped wafer T is rotated 360 degrees while irradiating the inside of the processing wafer W with laser light from each of the laser heads 210 and 220.
  • another annular internal surface modification layer M4, M5 is formed inside the processing wafer W.
  • the formation of the annular inner surface modified layers M4 and M5 (rotation step) and the movement of the laser heads 210 and 220 in the X-axis direction (movement step) are repeated, and the entire inner surface at the central portion Wc is obtained.
  • internal surface modified layers M4 and M5 are formed.
  • the formation of the annular inner surface modified layers M4 and M5 (rotation step) and the movement of the laser heads 210 and 220 in the X-axis direction (movement step) are performed individually. , May be performed simultaneously. That is, as shown in FIG. 17, laser light is emitted from inside each of the laser heads 210 and 220 to the inside of the processing wafer W. At this time, the laser heads 210 and 220 are moved in the radial direction while rotating the processing wafer W. Then, each of the inner surface modified layers M4 and M5 is formed in a spiral shape.
  • the same effects as in the above embodiment can be obtained in both the case where the annular internal surface modified layers M4 and M5 are formed and the case where the spiral internal surface modified layers M4 and M5 are formed. You can enjoy. That is, the internal surface modified layers M4 and M5 can be efficiently formed on the entire internal surface of the processing wafer W, and the throughput of wafer processing can be improved.
  • the radial movement of each of the laser heads 210 and 220 is reduced.
  • the radial movement of each of the laser heads 210 and 220 is, for example, the processing It is about 1/4 of the diameter of the wafer W.
  • step A4 since the internal surface modified layers M4 and M5 are formed in a ring or spiral shape in step A4, when the rear surface wafer Wb1 is separated in step A5, the stress applied in the circumferential direction is reduced. It becomes even and separation can be performed more easily.
  • the fourth laser head 210 and the fifth laser head 220 are respectively arranged at different positions in the radial direction, and the rotational speed of the processing wafer W is different at the positions. Therefore, when the distance between the inner surface modified layer M4 and the distance between the inner surface modified layer M5 is set to be the same, the frequency of the laser light L emitted from the fourth laser head 210 and the fifth laser head 220 is changed adjust. Specifically, when the frequency of the laser light L from the fourth laser head 210 is reduced and the frequency of the laser light L from the fifth laser head 220 is increased, the distance between the inner surface modified layer M4 and the inner surface is reduced.
  • the interval between the modified layers M5 can be the same. By making the intervals the same, the internal surface modified layers M4 and M5 can be uniformly formed in the wafer surface, and thereafter, the back surface wafer Wb1 can be easily separated.
  • the internal surface reforming layer can be formed by another method.
  • the processing wafer W is partitioned into two areas W1 and W2.
  • the fourth laser head 210 is arranged in the area W1, and the fifth laser head 220 is arranged in the area W2.
  • the fourth laser head 210 is moved in the X-axis direction to form a row of internal surface modification layers M6.
  • the fourth laser head 210 is shifted in the Y-axis direction, and further, the fourth laser head 210 is moved in the X-axis direction to form another row of the internal surface modification layer M6.
  • an internal surface modification layer M6 is formed on the entire internal surface of area W1.
  • the fifth laser head 220 is used to form the internal surface modified layer M7 on the entire internal surface of the area W2.
  • the internal surface modified layers M6 and M7 can be simultaneously formed in the areas W1 and W2, respectively. Therefore, the same effects as in the above embodiment can be enjoyed.
  • the number of areas that divide the processing wafer W is not limited to the above embodiment. As shown in FIG. 19, the processing wafer W may be divided into three areas W1 to W3. In such a case, it is preferable that the reforming apparatus 200 further includes another laser head for forming an internal surface modified layer in addition to the laser heads 210 and 220. By arranging one laser head in each of the areas W1 to W3, the internal surface modification layers M8, M9, and M10 can be simultaneously formed in each of the areas W1, W2, and W3. In other words, as the number of sections of the processing wafer W increases, the time for forming the internal surface modified layer can be shortened, and the throughput of wafer processing can be improved.
  • the processing wafer W may be divided into four areas W1 to W4. Each of the areas W1 to W4 is partitioned by the center line of the processing wafer W, that is, partitioned into a fan shape having the center of the processing wafer W as an apex.
  • the fourth laser head 210 is arranged in the area W1
  • the fifth laser head 220 is arranged in the area W3.
  • the internal surface modification layers M11 and M12 are simultaneously formed in the areas W1 and W3, respectively.
  • the processing wafer W is rotated by 90 degrees.
  • fourth laser head 210 is arranged in area W2
  • fifth laser head 220 is arranged in area W4.
  • an internal surface modification layer is simultaneously formed in each of the areas W1 and W3.
  • the number of areas for dividing the processing wafer W into a fan shape as described above is not limited to the above embodiment. What is necessary is just to rotate the processing wafer W according to the number of areas and the number of laser heads.
  • the reforming device 40 may be used.
  • the first laser head 60 can be sequentially moved to the areas W1 to W4 to form the internal surface modification layer in each of the areas W1 to W4.
  • the laser heads 210 and 220 for forming the inner surface modified layer and the second laser head 70 for forming the peripheral edge modified layer and the divided modified layer were separately provided. However, it may be shared.
  • the fifth laser head 220 may be used to form a peripheral modified layer and a divided modified layer.
  • the second laser head 70 may be used to form the internal surface modification layer.
  • a separation device 300 is obtained by changing the configuration of the heating mechanism from the configuration of the separation device 42 shown in FIG. That is, the separation device 300 has an infrared irradiation unit 310 instead of the third laser head 90 as a heating mechanism.
  • the infrared irradiation unit 310 is provided above the mounting table 80.
  • the infrared irradiator 310 irradiates the entire surface of the internal surface modified layer M3 with the infrared ray R to heat the internal surface modified layer M3.
  • the other configuration of the separation device 300 is the same as the configuration of the separation device 42.
  • the same effects as in the above embodiment can be enjoyed. That is, by heating the inner surface modified layer M3, a stress difference is generated between the back surface Wb side and the front surface Wa side of the processing wafer W, and the back surface wafer Wb1 can be easily separated.
  • the infrared irradiation unit 310 may be moved in a horizontal direction by a moving mechanism (not shown) to irradiate the entire surface of the internal surface modified layer M3 with the infrared light R.
  • a separation device 320 is obtained by changing the configuration of the cooling mechanism from the configuration of the separation device 42 shown in FIG. That is, the separation device 320 has the wafer holding unit 330 and the air supply unit 331 instead of the mounting table 80.
  • the wafer holding unit 330 holds the outer peripheral portion of the overlapped wafer T (support wafer S).
  • the air supply unit 331 supplies air to the overlapped wafer T held by the wafer holding unit 330 to cool the support wafer S side (the front surface Wa side of the processing wafer W) of the overlapped wafer T.
  • the other configuration of the separation device 320 is the same as the configuration of the separation device 42.
  • FIG. 23 is a flowchart showing main steps of wafer processing. In the present embodiment, a detailed description of the same processes as those in the embodiment shown in FIG. 6 will be omitted.
  • a cassette Ct containing a plurality of overlapped wafers T is mounted on the cassette mounting table 10 of the loading / unloading station 2.
  • the second laser head 70 is moved above the processing wafer W and to the boundary between the peripheral portion We and the central portion Wc of the processing wafer W. Thereafter, the laser beam L is emitted from the second laser head 70 to the inside of the processing wafer W while rotating the chuck 50 by the rotating unit 52. Then, along the boundary between the peripheral portion We and the central portion Wc, an annular peripheral modified layer M13 is formed.
  • the peripheral modified layer M13 extends in the thickness direction, and the lower end of the peripheral modified layer M13 is formed on the target surface of the ground processing wafer W (the dotted line in FIG. 25). ). Further, the peripheral edge modified layer M13 is formed at the same height as an internal surface modified layer M14 described later.
  • the crack C1 has propagated to the front surface Wa and the rear surface Wb, whereas the crack C13 from the peripheral modified layer M13 has propagated only to the front surface Wa, and Does not reach.
  • the internal surface reforming layer M14 is formed inside the processing wafer W as shown in FIG. 24C (Step B2 in FIG. 23). Like the internal surface modified layer M3 shown in FIG. 7, the internal surface modified layer M14 extends in the surface direction of the processing wafer W. Further, the internal surface modified layer M14 is formed at the same height as the peripheral edge modified layer M13, and the lower end of the internal surface modified layer M14 is located above the target surface of the processed wafer W after the grinding. Then, a plurality of internal surface modified layers M14 are formed in the surface direction, and the plurality of internal surface modified layers M14 are formed in the surface direction from the central portion to the peripheral edge modified layer M13, that is, in the central portion Wc.
  • the method for forming the internal surface modified layer M14 is the same as the method for forming the internal surface modified layer M3 in step A4. Further, cracks C14 propagate from the inner surface modified layer M14 in the plane direction. Further, when the pitch of the internal surface modification layer M14 is small, the crack C14 may not be provided.
  • the overlapped wafer T is transferred to the separation device 42 by the wafer transfer device 32.
  • the separation device 42 separates the rear surface Wb side (hereinafter, referred to as a rear surface wafer Wb2) of the processing wafer W from the internal surface modified layer M14 and the peripheral edge modified layer M13 as shown in FIG. 23 step B3).
  • a rear surface wafer Wb2 the rear surface wafer Wb2 is separated integrally with the peripheral edge We.
  • the method of separating the back wafer Wb2 is the same as the method of separating the back wafer Wb1 in step A5.
  • the overlapped wafer T is transferred to the grinding device 44 by the wafer transfer device 32.
  • the grinding device 44 grinds the rear surface Wb (damaged surface) of the processing wafer W as shown in FIG. 24E, and removes the internal surface modified layer M14 and the peripheral edge modified layer M13 remaining on the rear surface Wb (FIG. 24). 23 step B4).
  • the method of grinding the back surface Wb is the same as the method of grinding the back surface Wb in step A6.
  • the overlapped wafer T is transferred to the wet etching device 43 by the wafer transfer device 32.
  • a chemical solution is supplied to the back surface Wb (damaged surface) of the processing wafer W to perform wet etching (step B5 in FIG. 23).
  • the wet etching method for the back surface Wb is the same as the wet etching method for the back surface Wb in step A7.
  • the overlapped wafer T that has been subjected to all the processes is transferred to the transition device 34 by the wafer transfer device 32, and further transferred to the cassette Ct of the cassette mounting table 10 by the wafer transfer device 22.
  • a series of wafer processing in the wafer processing system 1 ends.
  • the same effect as in the above embodiment can be enjoyed.
  • the wafer processing system 1 may be provided with a collection unit that collects the separated back wafer Wb2 and a cleaning unit that cleans the back wafer Wb2.
  • the back surface wafer Wb2 may be ground.
  • the wafer processing system 1 may be provided with a grinding unit.
  • the back surface wafer Wb2 may be wet-etched. In such a case, the wafer processing system 1 may be provided with a wet-etching unit.
  • the order of forming the peripheral edge modified layer M13 in Step B1 and the order of forming the internal surface modified layer M14 in Step B2 may be changed.
  • the wafer processing is performed in the order of steps B2, B1, B3 to B5.
  • step B2 the internal surface modification layer M15 is formed inside the processing wafer W as shown in FIG. While the internal surface modified layer M14 shown in FIG. 24 is formed up to the peripheral edge modified layer M13, the internal surface modified layer M15 of the present embodiment extends from the center to the outer end in the surface direction. It is formed.
  • the crack C15 extends in the plane direction from the inner surface modified layer M15. When the pitch of the internal surface modification layer M15 is small, the crack C15 may not be provided.
  • step B3 as shown in FIG. 26D, the back surface wafer Wb2 above the internal surface modified layer M15 and the peripheral edge We below the internal surface modified layer M15 are separately separated. . That is, the back surface wafer Wb2 is separated based on the inner surface modified layer M15, and the peripheral edge We is separated based on the peripheral modified layer M13.
  • the other steps B1, B4 to B5 are the same as those in the embodiment shown in FIG.
  • the wafer processing system 1 of the above embodiment may have a CMP apparatus (CMP: Chemical Mechanical Polishing, chemical mechanical polishing) instead of the wet etching apparatus 43.
  • CMP apparatus Chemical Mechanical Polishing, chemical mechanical polishing
  • This CMP apparatus functions similarly to the wet etching apparatus 43. That is, in the CMP device, the back surface Wb (damaged surface) ground by the grinding device 44 is polished. Then, the grinding marks formed on the back surface Wb are removed by the grinding device 44, and the back surface Wb is smoothed.
  • the inner surface modified layer and the peripheral edge modified layer were removed by grinding the back surface Wb.
  • the grinding device 44 may be omitted.
  • the processing of the back surface Wb (damaged surface) may be performed only by the grinding device 44, and in such a case, the wet etching device 43 or the CMP device may be omitted.
  • the processing wafer W and the support wafer S are bonded by a bonding device outside the wafer processing system 1, but such a bonding device may be provided inside the wafer processing system 1.
  • cassettes Cw, Cs, and Ct capable of accommodating a plurality of processing wafers W, a plurality of support wafers S, and a plurality of overlapped wafers T, respectively, are carried into and out of the carry-in / out station 2.
  • the cassette mounting table 10 is configured such that these cassettes Cw, Cs, and Ct can be mounted in a line in the X-axis direction.
  • the pre-processing is performed on the oxide films Fw and Fs before the bonding process. May go.
  • the pretreatment for example, the surface layers of the oxide films Fw and Fs in the peripheral portion We may be removed, or the oxide films Fw and Fs may be protruded. Alternatively, the surface of oxide film Fw may be roughened to be rough.
  • the bonding surface Sj of the support wafer S at a portion corresponding to the peripheral edge portion We to be removed may be etched.
  • an interface processing apparatus 400 shown in FIG. 27 is used.
  • the interface processing apparatus 400 is provided inside the wafer processing system 1 together with, for example, the above-described bonding apparatus (not shown).
  • the interface processing apparatus 400 has the chuck 401 that holds the support wafer S with the surface Sa facing upward.
  • the chuck 401 is configured to be rotatable around a vertical axis by a rotation mechanism 402.
  • a first nozzle 403 as a first liquid supply unit for supplying the first etching liquid E1 and a second etching liquid E2 are supplied to the surface Sa of the support wafer S.
  • a second nozzle 404 as a second liquid supply unit is provided.
  • the nozzles 403 and 404 communicate with an etchant supply source (not shown) for storing and supplying the etchants E1 and E2, respectively.
  • the nozzles 403 and 404 may be configured to be movable in the X-axis direction, the Y-axis direction, and the Z-axis direction by a moving mechanism (not shown).
  • the first etching solution E1 etches the oxide film Fs formed on the surface Sa of the support wafer S.
  • the first etching solution E1 for example, HF (hydrogen fluoride) or the like is used.
  • the second etchant E2 etches the surface Sa of the support wafer S, that is, silicon.
  • TMAH tetramethylammonium hydroxide
  • Choline choline
  • KOH potassium hydroxide
  • the oxide film Fs is formed on the surface Sa of the support wafer S transferred to the interface processing apparatus 400 as shown in FIG. Then, while rotating the chuck 401 as shown in FIG. 28B, the first etching liquid E1 is supplied from the first nozzle 403 to the peripheral portion of the oxide film Fs, and the peripheral portion of the oxide film Fs is etched. Is done.
  • the edge of the etched oxide film Fs coincides with the position where the peripheral modified layer M1 described later is formed, that is, the edge of the peripheral edge We to be removed.
  • the second etching liquid E2 is supplied from the second nozzle 404 to the peripheral portion of the surface Sa of the support wafer S, and the surface Sa (silicon The periphery of the portion is etched.
  • the oxide film Fs is not etched, and the surface Sa is etched using the oxide film Fs as a mask.
  • the surface Sa is etched, for example, by several ⁇ m in the thickness direction.
  • the support wafer S subjected to the etching process and the processed wafer W are each transported to a bonding apparatus (not shown).
  • the bonding apparatus as shown in FIG. 28D, the processing wafer W and the supporting wafer S are bonded to form the overlapped wafer T.
  • the processing wafer W and the supporting wafer S are not bonded at the peripheral edge We.
  • step A1 shown in FIG. 6 is performed, and the peripheral edge modified layer M1 is formed inside the processing wafer W as shown in FIG. At this time, the position of the peripheral modified layer M1 and the position of the end of the oxide film Fs match.
  • steps A2 and A3 shown in FIG. 6 are sequentially performed, and after the divided modified layer M2 is formed, the peripheral edge We is removed based on the peripheral modified layer M1 and the crack C. Is done.
  • the processing wafer W and the supporting wafer S are not joined, so that the peripheral edge portion We can be appropriately removed.
  • the peripheral portion We may re-adhere after the processing wafer W and the support wafer S are joined.
  • the etching since the etching is performed up to the surface Sa of the support wafer S, the re-adhesion can be suppressed, and the processing wafer W and the support wafer S can be separated at the peripheral edge We.
  • the unjoined area can be maintained.
  • the etching of the surface Sa may be omitted.
  • an alkaline solution is used as the second etching solution E2.
  • the surface Sa of the support wafer S is etched using the second etching solution E2
  • the surface Sa becomes rough. Then, bonding and re-adhesion of the processing wafer W and the support wafer S at the peripheral edge portion We can be more reliably suppressed.
  • the position of the edge of the etched oxide film Fs and the position of the peripheral edge reforming layer M1 are matched as shown in FIG. 28 (d).
  • the quality layer M1 may be formed radially inward of the end of the oxide film Fs.
  • the etching of the oxide film Fs may be performed on the radially outer side of the peripheral modification layer M1.
  • the peripheral modified layer M1 when the peripheral modified layer M1 is formed, even if the peripheral modified layer M1 is shifted from the end of the oxide film Fs due to, for example, a processing error, the peripheral modified layer M1 is formed by the oxide film Fs. Can be suppressed from being formed radially outward from the end portion of the second member.
  • the processing wafer W floats on the support wafer S after the peripheral edge We is removed. . In this regard, in the present embodiment, the state of the processing wafer W can be reliably suppressed.
  • the present inventors have conducted intensive studies and have confirmed that the peripheral portion We can be appropriately removed if the distance G between the end of the oxide film Fs and the peripheral modified layer M1 is sufficiently small.
  • the distance G is preferably within 500 ⁇ m.
  • the peripheral edge modified layer M1 is formed radially inward of the end of the oxide film Fs.
  • the formation position of the peripheral edge modified layer M1 is different from that of the other processes as a pre-process of the bonding process. It is also applicable when performing.
  • the pre-processing includes, for example, removing the surface layers of the oxide films Fw and Fs in the peripheral portion We, projecting the oxide films Fw and Fs, and roughening the surface of the oxide film Fw to roughen the surface.
  • the peripheral edge modified layer M1 may be formed radially inward of the end of the interface between the processing wafer W and the support wafer S.
  • the method for removing the oxide films Fw and Fs as pretreatment is not limited to the above-described etching, and the oxide films Fw and Fs may be polished, for example.
  • an interface processing apparatus 410 shown in FIG. 30 is used.
  • the interface processing apparatus 410 is provided, for example, inside the wafer processing system 1 instead of the interface processing apparatus 400.
  • the interface processing apparatus 410 has a chuck 411 that holds the processing wafer W with the oxide film Fw facing upward.
  • the chuck 411 is configured to be rotatable around a vertical axis by a rotation mechanism 412.
  • a polishing member 413 which is pressed against the peripheral portion of the oxide film Fw and removes the peripheral portion of the oxide film Fw.
  • the polishing member 413 is configured to be movable in the Z-axis direction by a moving mechanism (not shown).
  • the processing wafer W and the supporting wafer S are not joined at the peripheral portion We, and the peripheral portion We is appropriately removed in the subsequent processing. be able to. Further, since a damaged layer is formed on the surface of the oxide film Fw, re-adhesion between the processing wafer W and the support wafer S can be suppressed, and an unbonded region can be maintained.
  • the surface grain size of the polishing member 413 that is, the abrasive grain size of the polishing member 413 can be arbitrarily selected
  • the film removal rate of the oxide film Fw and the surface roughness of the oxide film Fw after the film removal are arbitrary. Can be adjusted. Thereby, the re-adhesion of the unjoined region can be more appropriately suppressed.
  • the oxide film Fw of the processing wafer W is polished, but the same processing may be performed on the oxide film Fs of the support wafer S.
  • the unbonded region is formed on the processing wafer W (or the support wafer S) before bonding, but the unbonded region may be formed after bonding.
  • the bonding strength can be reduced and an unbonded region can be formed.
  • the trimming may be performed according to the notch of the processing wafer W.
  • processing wafer W and the support wafer S are directly bonded has been described.
  • the processing wafer W and the support wafer S may be bonded via an adhesive.
  • the above embodiment can also be applied to the case where one wafer is thinned. Further, the above embodiment can be applied to a case where the overlapped wafer T is separated into the processing wafer W and the support wafer S. For example, the above embodiment can be applied to a case where the object to be processed is an ingot and a substrate is formed from the ingot.

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US11833611B2 (en) 2018-10-30 2023-12-05 Hamamatsu Photonics K.K. Laser machining device
US11897056B2 (en) 2018-10-30 2024-02-13 Hamamatsu Photonics K.K. Laser processing device and laser processing method
JP7515292B2 (ja) 2020-04-28 2024-07-12 株式会社ディスコ チップの製造方法及びエッジトリミング装置

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