WO2020053923A1 - Dispositif d'affichage - Google Patents

Dispositif d'affichage Download PDF

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Publication number
WO2020053923A1
WO2020053923A1 PCT/JP2018/033400 JP2018033400W WO2020053923A1 WO 2020053923 A1 WO2020053923 A1 WO 2020053923A1 JP 2018033400 W JP2018033400 W JP 2018033400W WO 2020053923 A1 WO2020053923 A1 WO 2020053923A1
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WIPO (PCT)
Prior art keywords
display device
layer
organic
display
film
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Application number
PCT/JP2018/033400
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English (en)
Japanese (ja)
Inventor
貴翁 斉藤
昌彦 三輪
庸輔 神崎
雅貴 山中
屹 孫
誠二 金子
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シャープ株式会社
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Priority to PCT/JP2018/033400 priority Critical patent/WO2020053923A1/fr
Publication of WO2020053923A1 publication Critical patent/WO2020053923A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/06—Electrode terminals
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers

Definitions

  • the present invention relates to a display device.
  • Patent Literature 1 includes a sealing film having a laminated structure in which an inorganic film formed by a chemical vapor deposition (CVD) method or the like and an organic film formed by an inkjet method or the like are alternately arranged.
  • a display device is disclosed.
  • the present invention has been made in view of the above point, and an object of the present invention is to suppress the spread of the width of the frame region and enhance the effect of blocking the ink by the blocking wall.
  • a display device includes a base substrate, a TFT layer provided on the base substrate, a light emitting element provided on the TFT layer, and forming a display region, A sealing film provided so as to cover the light emitting element, in which a first inorganic insulating film, an organic film, and a second inorganic insulating film are sequentially laminated; and a frame region around the display region so as to surround the display region.
  • a display device provided with a blocking wall provided in the frame region, wherein a recess is provided along a surface of the base substrate on the TFT layer side along the blocking wall.
  • the concave portion is provided along the dam wall on the surface of the base substrate on the TFT layer side.
  • the ink blocking effect can be enhanced.
  • FIG. 1 is a plan view showing a schematic configuration of the organic EL display device according to the first embodiment of the present invention.
  • FIG. 2 is a plan view of a display area of the organic EL display device according to the first embodiment of the present invention.
  • FIG. 3 is a sectional view of the organic EL display device taken along line III-III in FIG.
  • FIG. 4 is an equivalent circuit diagram illustrating a TFT layer included in the organic EL display device according to the first embodiment of the present invention.
  • FIG. 5 is a cross-sectional view illustrating an organic EL layer included in the organic EL display device according to the first embodiment of the present invention.
  • FIG. 6 is a cross-sectional view of the frame region of the organic EL display device along the line VI-VI in FIG. FIG.
  • FIG. 7 is a cross-sectional view of the frame region of the organic EL display device along the line VII-VII in FIG.
  • FIG. 8 is a plan view illustrating a schematic configuration of the organic EL display device according to the second embodiment of the present invention.
  • FIG. 9 is a cross-sectional view of the frame region of the organic EL display device along line IX-IX in FIG.
  • FIG. 10 is a cross-sectional view of the frame region of the organic EL display device taken along line XX in FIG.
  • FIG. 11 is a plan view showing a schematic configuration of a modification of the organic EL display device according to the second embodiment of the present invention.
  • FIG. 1 is a plan view showing a schematic configuration of the organic EL display device 50a of the present embodiment.
  • FIG. 2 is a plan view of a display area D of the organic EL display device 50a.
  • FIG. 3 is a cross-sectional view of the organic EL display device 50a along the line III-III in FIG.
  • FIG. 4 is an equivalent circuit diagram showing the TFT layer 20 constituting the organic EL display device 50a.
  • FIG. 5 is a sectional view showing the organic EL layer 23 constituting the organic EL display device 50a. 6 and 7 are cross-sectional views of the frame region F of the organic EL display device 50a taken along lines VI-VI and VII-VII in FIG.
  • the organic EL display device 50a includes, for example, a display region D provided in a rectangular shape for displaying an image, and a frame region F provided in a rectangular frame shape around the display region D. ing.
  • the rectangular display area D is illustrated, but the rectangular shape may be, for example, a shape in which a side is an arc, a shape in which a corner is in an arc, or a part of a side.
  • a substantially rectangular shape such as a shape with a notch is also included.
  • a plurality of sub-pixels P are arranged in a matrix as shown in FIG.
  • a sub-pixel P having a red light-emitting region Lr for displaying red a sub-pixel P having a green light-emitting region Lg for displaying green
  • a sub-pixel P having a blue light-emitting region Lb for performing blue display is provided adjacent to each other.
  • one pixel is configured by three adjacent sub-pixels P having a red light emitting area Lr, a green light emitting area Lg, and a blue light emitting area Lb.
  • a terminal portion T is provided on one side (the right side in FIG. 1) of the frame region F. Also, in the frame area F, as shown in FIG. 1, between the display area D and the terminal portion T, it is possible to bend (in a U-shape), for example, 180 degrees (U-shape) the bending axis in the vertical direction in the figure.
  • the bent portion B is provided so as to extend in one direction (vertical direction in the figure).
  • a substantially C-shaped trench G is provided in a flattening film 19a described later so as to penetrate the flattening film 19a as shown in FIGS.
  • the trench G is provided in a substantially C-shape such that the terminal portion T side is opened in plan view.
  • the organic EL display device 50a includes a base substrate 10, a thin film transistor (TFT) layer 20 provided on the base substrate 10, and a light emitting element on the TFT layer 20. And an organic EL element 25 constituting the display region D, and a sealing film 30 provided so as to cover the organic EL element 25.
  • TFT thin film transistor
  • the base substrate 10 includes a first resin layer 6 provided on the side opposite to the TFT layer 20, a second resin layer 8 provided on the side of the TFT layer 20, An inorganic insulating film provided between the first resin layer and the second resin layer;
  • the first resin layer 6 and the second resin layer 8 are formed of, for example, a polyimide resin to a thickness of about 5 ⁇ m.
  • the inorganic insulating film 7 is formed to a thickness of about 500 nm by a single-layer film or a laminated film of an inorganic insulating film such as silicon nitride, silicon oxide, silicon oxynitride, or the like. Also, as shown in FIGS.
  • a concave portion Ca is formed substantially along the trench G so that the inorganic insulating film 7 is exposed from the second resin layer 8 in the frame region F. It is provided in a C shape. Therefore, a concave portion Ca is provided on the surface of the base substrate 10 on the side of the TFT layer 20 along a dam wall W described later. Further, as shown in FIG. 1, the concave portion Ca includes two sides (upper side and lower side in the figure) orthogonal to one side (the right side in the figure) of the frame area in which the terminal portion T is provided, and a frame provided with the terminal section. It is provided continuously on three sides, one side (left side in the figure) opposite to one side (right side in the figure) of the region. Note that, in the present embodiment, the concave portion Ca provided continuously on the side of the frame region is illustrated, but the concave portion Ca may be provided intermittently.
  • the TFT layer 20 includes a base coat film 11 provided on the second resin layer 8 of the base substrate 10, a plurality of first TFTs 9a, a plurality of second TFTs 9b provided on the base coat film 11, and a plurality of And a planarizing film 19a provided on each first TFT 9a, each second TFT 9b, and each capacitor 9c.
  • a plurality of gate lines 14 are provided so as to extend in the lateral direction in the drawing and parallel to each other.
  • a plurality of source lines 18f are provided so as to extend parallel to each other in the vertical direction in the drawing.
  • a plurality of power lines 18g are provided so as to extend in parallel with each other in the vertical direction in the figure.
  • Each power supply line 18g is provided so as to be adjacent to each source line 18f, as shown in FIG.
  • a first TFT 9a, a second TFT 9b, and a capacitor 9c are provided in each sub-pixel P.
  • the base coat film 11 is composed of, for example, a single-layer film or a laminated film of an inorganic insulating film such as silicon nitride, silicon oxide, or silicon oxynitride.
  • the first TFT 9a is electrically connected to the corresponding gate line 14 and source line 18f in each sub-pixel P, as shown in FIG.
  • the first TFT 9a includes a semiconductor layer 12a, a gate insulating film 13, a gate electrode 14a, a first interlayer insulating film 15, a second interlayer insulating film 17, and a semiconductor layer 12a sequentially provided on the base coat film 11. It has a source electrode 18a and a drain electrode 18b.
  • the semiconductor layer 12a is provided in an island shape on the base coat film 11, and has a channel region, a source region, and a drain region. Further, as shown in FIG.
  • the gate insulating film 13 is provided so as to cover the semiconductor layer 12a. Further, as shown in FIG. 3, the gate electrode 14a is provided on the gate insulating film 13 so as to overlap the channel region of the semiconductor layer 12a. Further, as shown in FIG. 3, the first interlayer insulating film 15 and the second interlayer insulating film 17 are provided so as to cover the gate electrode 14a. The source electrode 18a and the drain electrode 18b are provided on the second interlayer insulating film 17 so as to be separated from each other, as shown in FIG. Further, as shown in FIG.
  • the source electrode 18a and the drain electrode 18b are connected via respective contact holes formed in a laminated film of the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17, It is electrically connected to the source region and the drain region of the semiconductor layer 12a, respectively.
  • the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 are each formed of a single-layer film or a stacked film of an inorganic insulating film such as silicon nitride, silicon oxide, or silicon oxynitride. .
  • the second TFT 9b is electrically connected to the corresponding first TFT 9a and the power supply line 18g in each sub-pixel P.
  • the first TFT 9b includes a semiconductor layer 12b, a gate insulating film 13, a gate electrode 14b, a first interlayer insulating film 15, a second interlayer insulating film 17, and a semiconductor layer 12b sequentially provided on the base coat film 11. It has a source electrode 18c and a drain electrode 18d.
  • the semiconductor layer 12b is provided in an island shape on the base coat film 11, and has a channel region, a source region, and a drain region. Further, as shown in FIG.
  • the gate insulating film 13 is provided so as to cover the semiconductor layer 12b. Further, as shown in FIG. 3, the gate electrode 14b is provided on the gate insulating film 13 so as to overlap the channel region of the semiconductor layer 12b. Further, as shown in FIG. 3, the first interlayer insulating film 15 and the second interlayer insulating film 17 are provided in order to cover the gate electrode 14b. The source electrode 18c and the drain electrode 18d are provided on the second interlayer insulating film 17 so as to be separated from each other, as shown in FIG. Further, as shown in FIG.
  • the source electrode 18c and the drain electrode 18d are connected via respective contact holes formed in a laminated film of the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17, It is electrically connected to the source region and the drain region of the semiconductor layer 12b, respectively.
  • first gate 9a and the second TFT 9b of the top gate type are illustrated, but the first TFT 9a and the second TFT 9b may be a bottom gate type TFT.
  • the capacitor 9c is electrically connected to the corresponding first TFT 9a and power supply line 18g in each sub-pixel P, as shown in FIG.
  • the capacitor 9c includes a lower conductive layer 14c formed in the same layer with the same material as the gate line 14a and the like, and a first interlayer insulating film provided so as to cover the lower conductive layer 14c. 15 and an upper conductive layer 16 provided on the first interlayer insulating film 15 so as to overlap the lower conductive layer 14c.
  • the upper conductive layer 16 is electrically connected to a power supply line 18g through a contact hole formed in the second interlayer insulating film 17, as shown in FIG.
  • the flattening film 19a is made of, for example, an organic resin material such as a polyimide resin.
  • the organic EL element 25 includes a plurality of first electrodes 21a, an edge cover 22a, a plurality of organic EL layers 23, and a second electrode 24 sequentially provided on the flattening film 19a.
  • the plurality of first electrodes 21a are provided in a matrix on the planarization film 19a so as to correspond to the plurality of sub-pixels P. Further, as shown in FIG. 3, each first electrode 21a is electrically connected to the drain electrode 18d of each second TFT 9b via a contact hole formed in the planarizing film 19a. Further, the first electrode 21a has a function of injecting holes (holes) into the organic EL layer 23. Further, the first electrode 21a is more preferably formed of a material having a large work function in order to improve the efficiency of hole injection into the organic EL layer 23.
  • the first electrode 21a for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au) , Titanium (Ti), ruthenium (Ru), manganese (Mn), indium (In), ytterbium (Yb), lithium fluoride (LiF), platinum (Pt), palladium (Pd), molybdenum (Mo), iridium ( Metal materials such as Ir) and tin (Sn). Further, the material forming the first electrode 21a may be an alloy such as astatine (At) / astatin oxide (AtO 2 ).
  • the material forming the first electrode 21a is, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), and indium zinc oxide (IZO). There may be. Further, the first electrode 21a may be formed by laminating a plurality of layers made of the above materials. Note that examples of the compound material having a large work function include indium tin oxide (ITO) and indium zinc oxide (IZO).
  • the edge cover 22a is provided in a lattice shape so as to cover the peripheral portion of each first electrode 21a.
  • a material forming the edge cover 22a include a positive photosensitive resin such as a polyimide resin, an acrylic resin, a polysiloxane resin, and a novolak resin.
  • each of the organic EL layers 23 includes a hole injection layer 1, a hole transport layer 2, a light emitting layer 3, an electron transport layer 4, and an electron injection layer which are sequentially provided on the first electrode 21a. It has a layer 5.
  • the hole injection layer 1 is also called an anode buffer layer, and has a function of making the energy levels of the first electrode 21a and the organic EL layer 23 close to each other and improving the efficiency of hole injection from the first electrode 21a to the organic EL layer 23.
  • a material constituting the hole injection layer for example, a triazole derivative, an oxadiazole derivative, an imidazole derivative, a polyarylalkane derivative, a pyrazoline derivative, a phenylenediamine derivative, an oxazole derivative, a styrylanthracene derivative, a fluorenone derivative, Hydrazone derivatives, stilbene derivatives and the like can be mentioned.
  • the hole transport layer 2 has a function of improving the efficiency of transporting holes from the first electrode 21a to the organic EL layer 23.
  • a material constituting the hole transport layer 2 for example, a porphyrin derivative, an aromatic tertiary amine compound, a styrylamine derivative, polyvinyl carbazole, poly-p-phenylene vinylene, polysilane, a triazole derivative, oxadiazole Derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amine-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, hydrogenated amorphous silicon, Examples include hydrogenated amorphous silicon carbide, zinc sulfide, and zinc selenide.
  • the light emitting layer 3 when a voltage is applied by the first electrode 21a and the second electrode 24, holes and electrons are injected from the first electrode 21a and the second electrode 24, respectively, and the holes and electrons recombine. Area.
  • the light emitting layer 3 is formed of a material having high luminous efficiency. Examples of the material constituting the light emitting layer 3 include a metal oxinoid compound [8-hydroxyquinoline metal complex], a naphthalene derivative, an anthracene derivative, a diphenylethylene derivative, a vinylacetone derivative, a triphenylamine derivative, a butadiene derivative, and a coumarin derivative.
  • the electron transport layer 4 has a function of efficiently moving electrons to the light emitting layer 3.
  • a material constituting the electron transport layer 4 for example, as an organic compound, an oxadiazole derivative, a triazole derivative, a benzoquinone derivative, a naphthoquinone derivative, an anthraquinone derivative, a tetracyanoanthraquinodimethane derivative, a diphenoquinone derivative, or a fluorenone derivative , Silole derivatives, metal oxinoid compounds and the like.
  • the electron injection layer 5 has a function of making the energy levels of the second electrode 24 and the organic EL layer 23 close to each other and improving the efficiency of injecting electrons from the second electrode 24 into the organic EL layer 23.
  • the drive voltage of the organic EL element 25 can be reduced.
  • the electron injection layer 5 is also called a cathode buffer layer.
  • a material constituting the electron injection layer 5 for example, lithium fluoride (LiF), magnesium fluoride (MgF 2 ), calcium fluoride (CaF 2 ), strontium fluoride (SrF 2 ), barium fluoride Examples thereof include an inorganic alkali compound such as (BaF 2 ), aluminum oxide (Al 2 O 3 ), and strontium oxide (SrO).
  • the second electrode 24 is provided so as to cover each organic EL layer 23 and the edge cover 22a.
  • the second electrode 24 has a function of injecting electrons into the organic EL layer 23.
  • the second electrode 24 is more preferably made of a material having a small work function in order to improve the efficiency of electron injection into the organic EL layer 23.
  • the second electrode 24 for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au) , Calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb) , Lithium fluoride (LiF) and the like.
  • the second electrode 24 is made of, for example, magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / astatin oxide (AtO 2). ), Lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), and lithium fluoride (LiF) / calcium (Ca) / aluminum (Al). You may.
  • the second electrode 24 may be formed of a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), and indium zinc oxide (IZO), for example. .
  • the second electrode 24 may be formed by stacking a plurality of layers made of the above materials.
  • the material having a small work function include magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), and sodium.
  • (Na) / potassium (K) lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), lithium fluoride (LiF) / calcium (Ca) / aluminum (Al) And the like.
  • the sealing film 30 includes a first inorganic insulating film 26 provided to cover the second electrode 24, and an organic film provided on the first inorganic insulating film 26. It has a film 27 and a second inorganic insulating film 28 provided so as to cover the organic film 27, and has a function of protecting the organic EL layer 23 from moisture, oxygen, and the like.
  • the first inorganic insulating film 26 and the second inorganic insulating film 28 are made of, for example, a nitride such as silicon oxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), or trisilicon tetranitride (Si 3 N 4 ).
  • the organic film 27 is made of, for example, an organic material such as an acrylic resin, a polyurea resin, a parylene resin, a polyimide resin, and a polyamide resin.
  • the organic EL display device 50 a includes a dam wall W provided in the frame region F so as to surround the display region D.
  • the damming wall W is provided on the display region D side and has a first damming wall Wa provided in a frame shape so as to overlap the peripheral end of the organic film 27 of the sealing film 30. And a second dam wall Wb provided in a frame shape so as to surround the first dam wall Wa.
  • the concave portion Ca formed in the second resin layer 8 described above is provided between the first dam wall Wa and the second dam wall Wb, as shown in FIGS. 1 and 6.
  • the first dam wall Wa is composed of a resin layer 22c formed of the same material as the edge cover 22a in the same layer.
  • the second dam wall Wb is formed on the lower resin layer 19c formed of the same material as the planarizing film 19a in the same layer, and on the lower resin layer 19c (the third conductive layer 21b). And an upper resin layer 22d formed in the same layer with the same material as the edge cover 22a.
  • the configuration in which the distance between the first damming wall Wa and the second damming wall Wb is substantially the same on the four sides of the frame area F is illustrated, but the first damping wall Wa
  • the distance between the second dam wall Wb and the four walls of the frame area F may not be uniform.
  • the distance Sb (see FIG. 7) between the first damming wall Wa and the second damming wall Wb on one side (right side in FIG. 1) of the frame region F provided with the terminal portion T is determined by the terminal portion T.
  • the distance Sa (see FIG. 6) between the first dam wall Wa and the second dam wall Wb on the side may be larger. According to this, at one side of the frame region F where the terminal portion T is provided, the ink that becomes the organic film 27 of the sealing film 30 even if the concave portion Ca is not provided in the second resin layer 8 of the base substrate 10. The amount of damming by the second damming wall Wb can be increased.
  • the organic EL display device 50 a includes a first conductive layer 18 h provided in the frame region F outside the trench G in a substantially C shape in plan view.
  • the first conductive layer 18h is electrically connected to a terminal to which a low power supply voltage (ELVSS) is input in the terminal portion T.
  • the first conductive layer 18h is electrically connected to the second electrode 24 via the third conductive layer 21b as shown in FIGS.
  • the first conductive layer 18h is provided so as to cover the concave portion Ca, as shown in FIG.
  • the first conductive layer 18h is formed in the same layer and the same material as the source line 18f.
  • the third conductive layer 21b is formed in the same layer and the same material as the first electrode 21a. Further, TFTs constituting a gate signal control circuit and a light emission control circuit are provided on the display region D side and the first conductive layer 18h side of the upper and lower sides of the trench G in FIG.
  • the organic EL display device 50 a includes a second conductive layer 18 i provided in a band shape on one side of the frame region F along the terminal portion T.
  • the second conductive layer 18i is electrically connected to a terminal to which a high power supply voltage (ELVDD) is input in the terminal portion T.
  • the second conductive layer 18i is provided so as to overlap the first damming wall Wa and the second damming wall Wb, and the first damping wall Wa and the second damming wall are provided. It is provided at least between the walls Wb.
  • the second conductive layer 18i is electrically connected to a plurality of power lines 18g arranged in the display area D. Note that the second conductive layer 18i is formed in the same layer with the same material as the source line 18f and the like.
  • the organic EL display device 50a is provided in an island shape so as to protrude upward between the display region D and the first dam wall Wa in the frame region F, as shown in FIGS. 3, 6, and 7. And a plurality of peripheral photo spacers 22b.
  • the peripheral photo spacer 22b is formed in the same layer with the same material as the edge cover 22a.
  • the portion protruding above the surface of the edge cover 22a is an island-shaped pixel photo spacer.
  • the organic EL display device 50a is provided on one side of the frame region F along the terminal portion T so as to extend in parallel with each other in a direction orthogonal to the direction in which the bent portion B extends. Of the first wiring 18j. Further, as shown in FIG. 7, the organic EL display device 50a is provided on one side of the frame region F along the terminal portion T so as to extend parallel to each other in a direction orthogonal to the direction in which the bent portion B extends. Is provided.
  • the display area D side of the plurality of first routing wirings 18j is electrically connected to the display wirings (the gate lines 14, the source lines 18f, and the like). As shown in FIG.
  • the terminal portion T side of the plurality of wirings 18j is connected to the plurality of wirings 14j through contact holes formed in the first interlayer insulating film 15 and the second interlayer insulating film 17. It is electrically connected to the display area D side. Further, the terminal portion T side of the plurality of routing wirings 14j is electrically connected to a terminal provided in the terminal portion T.
  • the first routing wiring 18j is formed in the same layer with the same material as the source line 18f and the like.
  • the second routing wiring 14j is formed of the same material as the gate line 14 and the like in the same layer.
  • a gate signal is input to the first TFT 9a via the gate line 14, thereby turning on the first TFT 9a, and the gate electrode of the second TFT 9b via the source line 18f.
  • a predetermined voltage corresponding to the source signal is written to the capacitor 14b and the capacitor 9c, and a current from the power supply line 18g defined based on the gate voltage of the second TFT 9b is supplied to the organic EL layer 23.
  • the light emitting layer 3 is configured to emit light to display an image.
  • the gate voltage of the second TFT 9b is held by the capacitor 9c, so that the light emitting layer 3 emits light until the gate signal of the next frame is input. Will be maintained.
  • the method for manufacturing the organic EL display device 50a according to the present embodiment includes a TFT layer forming step, an organic EL element forming step, and a sealing film forming step.
  • ⁇ TFT layer forming step> First, for example, after applying a non-photosensitive polyimide resin on a glass substrate, the first resin layer 6 is formed by performing pre-baking and post-baking on the applied film.
  • a silicon nitride film, a silicon oxide film, a silicon oxynitride film, or the like is formed on the surface of the substrate on which the first resin layer 6a is formed, for example, by a plasma CVD (chemical vapor deposition) method, thereby forming an inorganic insulating film.
  • a film 7 is formed.
  • a photosensitive polyimide resin is applied to the surface of the substrate on which the inorganic insulating film 7 has been formed, and then the applied film is subjected to pre-baking, exposure, development, and post-baking to form a second portion having a concave portion Ca. After forming the resin layer 8, the base substrate 10 is formed.
  • the base coat film 11, the first TFT 9a, the second TFT 9b, the capacitor 9c, and the flattening film 19a are formed on the base substrate 10 by using a known method, and the TFT layer 20 is formed.
  • the first electrode 21a, the edge cover 22a, the organic EL layer 23 (the hole injection layer 1, the hole transport layer) are formed on the flattening film 19a of the TFT layer 20 formed in the above-described TFT layer forming step by using a known method.
  • the organic EL device 25 is formed by forming the layer 2, the light emitting layer 3, the electron transport layer 4, the electron injection layer 5) and the second electrode 24.
  • ⁇ Sealing film forming step> First, using a mask, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film is formed on the surface of the substrate on which the organic EL device 25 formed in the organic EL device forming step is formed by plasma.
  • the first inorganic insulating film 26 is formed by a CVD method.
  • an organic resin material such as an acrylic resin is formed on the surface of the substrate on which the first inorganic insulating film 26 is formed, for example, by an ink-jet method to form an organic film 27.
  • an inorganic insulating film such as a silicon nitride film, a silicon oxide film, a silicon oxynitride film, or the like is formed on the substrate on which the organic film 27 is formed by a plasma CVD method using a mask.
  • the sealing film 30 is formed by forming the inorganic insulating film 28.
  • the glass substrate is irradiated from the lower surface of the base substrate 10 by irradiating a laser beam from the glass substrate side of the base substrate 10.
  • a protective sheet (not shown) is attached to the lower surface of the base substrate 10 from which the glass substrate has been peeled.
  • the organic EL display device 50a of the present embodiment can be manufactured.
  • the organic EL display device 50a of the present embodiment in the frame region F, the first dam wall Wa and the second dam wall on the surface of the second resin layer 8 of the base substrate 10 on the TFT layer 20 side.
  • a concave portion Ca is provided between the dam walls Wb.
  • the organic EL display device 50a of the present embodiment since the first conductive layer 18h is provided so as to cover the concave portion Ca in the frame region F, the first conductive layer 18h and the second conductive layer 18 formed by the concave portion Ca are provided. Short circuits between the layers 18i can be suppressed.
  • FIG. 8 is a plan view showing a schematic configuration of the organic EL display device 50b of the present embodiment.
  • FIG. 9 is a cross-sectional view of the frame region F of the organic EL display device 50b along the lines IX-IX and XX in FIGS.
  • FIG. 11 is a plan view showing a schematic configuration of an organic EL display device 50c which is a modification of the organic EL display device 50b.
  • the same portions as those in FIGS. 1 to 7 are denoted by the same reference numerals, and detailed description thereof will be omitted.
  • the organic EL display device 50a in which the second resin layer 8 of the base substrate 10 is provided with the concave portion Ca having a constant width is illustrated.
  • the organic EL display device 50b includes a display area D provided in a substantially rectangular shape with four corners formed in an R shape, and a frame area F provided around the display area D. It has.
  • the organic EL display device 50b includes a base substrate 10, a TFT layer 20 provided on the base substrate 10, and an organic EL element 25 provided on the TFT layer 20, as shown in FIGS. And a sealing film 30 provided so as to cover the organic EL element 25.
  • the concave portion Cb provided in the second resin layer 8 of the base substrate 10 has a width Ha at a portion corresponding to a corner of the display region D as shown in FIGS.
  • the width is formed to be larger than the width Hb in a portion corresponding to the middle part of the side of the display area D.
  • the configuration is such that the width Ha of the concave portion Cb in the portion corresponding to the corner of the display region D is formed larger than the width Hb of the concave portion Cb in the portion corresponding to the middle portion of the side of the display region D.
  • the concave portion Cb has a constant width like the concave portion Ca of the first embodiment, and the depth (Va, see FIG. 10) of the portion corresponding to the corner of the display region D is the same as the display region D. It may be formed larger than the depth (Vb, see FIG. 10) in the portion corresponding to the middle part of the side.
  • the concave portion Cb is formed such that the width Ha at a portion corresponding to the corner of the display region D is larger than the width Hb at a portion corresponding to the intermediate portion of the side of the display region D, and then the corner C of the display region D is formed. May be formed to be larger than the depth Vb (see FIG. 10) of the portion corresponding to the middle part of the side of the display area D.
  • the organic EL display device 50c has four corners formed in an R shape, and a middle part of one side (the left side in the figure) bent inward in a C shape in a plan view.
  • the display device includes a display region D provided in a substantially rectangular shape having a notch N, and a frame region F provided around the display region D.
  • the organic EL display device 50c includes a base substrate 10, a TFT layer 20 provided on the base substrate 10, and an organic EL element 25 provided on the TFT layer 20, similarly to the above-described organic EL display device 50b. And a sealing film 30 provided so as to cover the organic EL element 25.
  • the concave portion Cc provided in the second resin layer 8 of the base substrate 10 has a width Ha corresponding to a corner of the display region D as shown in FIG. Is formed to be larger than the width Hb at the portion corresponding to the middle portion between the two sides (upper side and lower side in the figure), and the width Hc at the portion corresponding to the bent portion of one side of the display area D is the display area D (in the figure).
  • the width Hb is formed larger than the width Hb at a portion corresponding to the middle part between the two sides (upper side and lower side).
  • the concave portion Cc is locally larger at the portion corresponding to the corner of the display region D and the bent portion of one side of the display region D instead of the width, similarly to the organic EL display device 50b described above. It may be formed, or may be locally large in width and depth at portions corresponding to the corners of the display region D and the bent portions of one side of the display region D.
  • the organic EL display devices 50b and 50c described above have flexibility similarly to the organic EL display device 50a according to the first embodiment, and the organic EL display devices 50a and 50c are provided in each sub-pixel P via the first TFT 9a and the second TFT 9b.
  • the image display is performed by appropriately emitting light from the light emitting layer 3 of the layer 23.
  • the organic EL display devices 50b and 50c of the present embodiment can be manufactured by changing the pattern shape of the second resin layer 8 in the method of manufacturing the organic EL display device 50a described in the first embodiment. it can.
  • the organic EL display devices 50b and 50c of the present embodiment in the frame region F, the first dam wall Wa and the first dam wall Wa on the surface of the second resin layer 8 of the base substrate 10 on the TFT layer 20 side are formed. Depressions Cb and Cc are provided between the second dam walls Wb.
  • the amount of ink that can be used as the organic film 27 of the sealing film 30 by the second blocking wall Wb can be blocked by the volume of the concave portions Cb and Cc, so that the width of the frame region F is suppressed from expanding.
  • the effect of blocking the ink by the second blocking wall Wb can be enhanced, and the ink that becomes the organic film 27 can be prevented from climbing over the second blocking wall Wb.
  • the concave portions Cb and Cc are formed such that the width Ha at the portion corresponding to the corner of the display region D corresponds to the middle portion of the side of the display region D. Since the width is larger than the width Hb, it is possible to relatively increase the amount of ink that can be blocked at a portion corresponding to a corner of the display area D. This increases the amount of ink that can be blocked at the portion corresponding to the corner of the display area D where the ink that will become the organic film 27 is likely to accumulate, so that the ink blocking effect by the second blocking wall Wb is effectively achieved. Can be enhanced.
  • the concave portion Cc has a width Hc at a portion corresponding to a bent portion of the display region D and a width Hb at a portion corresponding to an intermediate portion between two sides of the display region D. Therefore, the amount of ink that can be blocked at a portion corresponding to a bent portion of one side of the display area D can be relatively increased. This increases the amount of ink that can be blocked at a portion corresponding to a bent portion of one side of the display region D where the ink that is to be the organic film 27 is likely to accumulate, so that the ink blocking effect by the second blocking wall Wb is provided. Can be effectively increased.
  • the organic EL layer having a five-layered structure of the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer is exemplified. It may have a three-layer structure of a layer / hole transport layer, a light emitting layer, and an electron transport layer / electron injection layer.
  • the organic EL display device in which the first electrode is used as an anode and the second electrode is used as a cathode is exemplified.
  • the present invention inverts the stacked structure of the organic EL layer and uses the first electrode as a cathode. It can be applied to an organic EL display device using the second electrode as an anode.
  • the organic EL display device in which the electrode of the TFT electrically connected to the first electrode is used as the drain electrode is exemplified.
  • the present invention relates to a TFT electrically connected to the first electrode. This electrode can be applied to an organic EL display device called a source electrode.
  • the organic EL display device has been described as an example of the display device, but the present invention can be applied to a display device having a plurality of light emitting elements driven by current.
  • the present invention can be applied to a display device including a QLED (Quantum-dot-light-emitting-diode) which is a light-emitting element using a quantum dot-containing layer.
  • QLED Quantum-dot-light-emitting-diode
  • the present invention is useful for a flexible display device.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Un dispositif d'affichage selon la présente invention est pourvu : d'un substrat de base (10); d'une couche de TFT (20) qui est disposée sur le substrat de base (10); un élément électroluminescent qui est disposé sur la couche de TFT (20) et constitue une zone d'affichage; d'un film d'étanchéité (30) qui est disposé de façon à recouvrir l'élément électroluminescent, tout en étant composé d'un premier film isolant inorganique (26), d'un film organique (27) et d'un second film isolant inorganique (28), lesdits films étant empilés séquentiellement; et des parois de déversoir (Wa, Wb) qui sont disposées de façon à entourer la zone d'affichage dans une zone de cadre (F) qui est positionnée autour de la zone d'affichage. La surface côté couche de TFT (20) du substrat de base (10) est pourvue d'une partie évidée (Ca) le long des parois de déversoir (Wa, Wb) dans la zone de cadre (F).
PCT/JP2018/033400 2018-09-10 2018-09-10 Dispositif d'affichage WO2020053923A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115398512A (zh) * 2020-04-21 2022-11-25 夏普株式会社 显示装置和显示装置的制造方法

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JP2006049308A (ja) * 2004-08-04 2006-02-16 Samsung Electronics Co Ltd 表示装置、その製造方法、及びその製造装置
JP2009164107A (ja) * 2007-12-14 2009-07-23 Canon Inc 有機ｅｌ表示装置
US20160260928A1 (en) * 2015-03-06 2016-09-08 Samsung Display Co., Ltd. Organic light-emitting display apparatus and method of manufacturing the same
US20170141352A1 (en) * 2015-11-17 2017-05-18 Samsung Display Co., Ltd. Display structure of display device with block members having different haights
US20180061728A1 (en) * 2016-08-23 2018-03-01 Yang-Chen Chen Display panel with dam structure
WO2018042960A1 (fr) * 2016-09-01 2018-03-08 双葉電子工業株式会社 Dispositif d'affichage électroluminescent organique

Patent Citations (6)

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Publication number Priority date Publication date Assignee Title
JP2006049308A (ja) * 2004-08-04 2006-02-16 Samsung Electronics Co Ltd 表示装置、その製造方法、及びその製造装置
JP2009164107A (ja) * 2007-12-14 2009-07-23 Canon Inc 有機ｅｌ表示装置
US20160260928A1 (en) * 2015-03-06 2016-09-08 Samsung Display Co., Ltd. Organic light-emitting display apparatus and method of manufacturing the same
US20170141352A1 (en) * 2015-11-17 2017-05-18 Samsung Display Co., Ltd. Display structure of display device with block members having different haights
US20180061728A1 (en) * 2016-08-23 2018-03-01 Yang-Chen Chen Display panel with dam structure
WO2018042960A1 (fr) * 2016-09-01 2018-03-08 双葉電子工業株式会社 Dispositif d'affichage électroluminescent organique

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115398512A (zh) * 2020-04-21 2022-11-25 夏普株式会社 显示装置和显示装置的制造方法

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