WO2020017007A1 - Dispositif d'affichage et son procédé de fabrication - Google Patents

Dispositif d'affichage et son procédé de fabrication Download PDF

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Publication number
WO2020017007A1
WO2020017007A1 PCT/JP2018/027174 JP2018027174W WO2020017007A1 WO 2020017007 A1 WO2020017007 A1 WO 2020017007A1 JP 2018027174 W JP2018027174 W JP 2018027174W WO 2020017007 A1 WO2020017007 A1 WO 2020017007A1
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WIPO (PCT)
Prior art keywords
frame
layer
display device
film
flattening film
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PCT/JP2018/027174
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English (en)
Japanese (ja)
Inventor
貴翁 斉藤
昌彦 三輪
庸輔 神崎
屹 孫
雅貴 山中
誠二 金子
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シャープ株式会社
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Priority to PCT/JP2018/027174 priority Critical patent/WO2020017007A1/fr
Publication of WO2020017007A1 publication Critical patent/WO2020017007A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/06—Electrode terminals
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers

Definitions

  • the present invention relates to a display device and a method for manufacturing the same.
  • organic EL display devices using organic EL (electroluminescence) elements have attracted attention as display devices replacing liquid crystal display devices.
  • organic EL display device a flexible organic EL display device in which an organic EL element or the like is formed on a flexible resin substrate has been proposed.
  • a rectangular display region for displaying an image and a frame region around the display region are provided, and it is desired to reduce the frame region.
  • a method of reducing the frame area by bending the frame area on the terminal side has been proposed.
  • the flattening film is also etched.
  • gas eg, chlorine gas
  • the present invention has been made in view of the above-described problem, and has as its object to provide a display device capable of preventing generation of gas due to etching of a flattening film.
  • a display device includes a resin substrate, a TFT layer having a flattening film provided on the resin substrate, and a light emitting device which is provided through the TFT layer and forms a display region.
  • An element a frame region provided around the display region, a terminal portion provided at an end of the frame region, a bent portion provided between the display region and the terminal portion, and a resin provided in the frame region.
  • a display device comprising: at least one layer of an inorganic insulating film constituting said TFT layer laminated on a substrate, wherein said TFT layer has a metal layer, and at least one layer of said inorganic insulating film is formed at a bent portion.
  • An opening is formed in the opening, a frame flattening film is provided in the opening, and a plurality of frame wirings made of the same metal material as the metal layer are provided on the frame flattening film. Electrically connected to the wiring in the forehead Flattening film is provided in an island shape for each of a plurality of frame lines, characterized in that the frame lines cover the entire surface and the side surface of the frame planarization film.
  • the present invention it is possible to prevent the frame flattening film from being etched when forming the frame wiring by dry etching in the bent portion. Therefore, generation of gas (eg, chlorine gas) due to etching of the frame flattening film can be prevented.
  • gas eg, chlorine gas
  • FIG. 2 is a plan view of the organic EL display device according to the first embodiment.
  • FIG. 2 is a plan view of a display area of the organic EL display device according to the first embodiment.
  • FIG. 2 is an equivalent circuit diagram illustrating a TFT layer included in the organic EL display device according to the first embodiment.
  • FIG. 2 is a sectional view of a display area of the organic EL display device according to the first embodiment.
  • FIG. 2 is a cross-sectional view illustrating an organic EL layer included in the organic EL display device according to the first embodiment.
  • FIG. 2 is a plan view of a bent portion of the organic EL display device according to the first embodiment.
  • FIG. 7 is a cross-sectional view of a bent portion of the organic EL display device according to the first embodiment, and is a cross-sectional view taken along line AA of FIG.
  • FIG. 7 is a sectional view of a bent portion of the organic EL display device according to the first embodiment, and is a sectional view taken along line BB of FIG.
  • FIG. 1 is a plan view of the organic EL display device 50a of the present embodiment.
  • FIG. 2 is a plan view of a display area D of the organic EL display device 50a.
  • FIG. 3 is an equivalent circuit diagram showing the TFT layer 20a constituting the organic EL display device 50a.
  • FIG. 4 is a sectional view of a display area D of the organic EL display device 50a.
  • FIG. 5 is a sectional view showing the organic EL layer 23 constituting the organic EL display device 50a.
  • the organic EL display device 50a includes a display area D for displaying an image defined in a rectangular shape, and a frame area F defined around the display area D.
  • the organic EL elements 30 are provided, and a plurality of pixels are arranged in a matrix.
  • a terminal portion T is provided at the right end of the frame region F in the drawing as shown in FIG.
  • a bent part G that is bent at 180 ° (in a U-shape) with the vertical direction in the figure as a bending axis is provided.
  • the display area D is provided along one side (the right side in the figure).
  • the display area D of the organic EL display device 50a As shown in FIG. 2, a plurality of sub-pixels P are arranged in a matrix. Further, as shown in FIG. 2, the display area D of the organic EL display device 50a includes a sub-pixel P having a red light-emitting area Lr for displaying red and a green light-emitting area Lg for displaying green. A sub-pixel P and a sub-pixel P having a blue light emitting region Lb for performing blue display are provided adjacent to each other.
  • one pixel is constituted by three adjacent sub-pixels P having a red light emitting region Lr, a green light emitting region Lg, and a blue light emitting region Lb.
  • the organic EL display device 50a includes a resin substrate layer 10 and an organic EL element 30 forming a display region D provided on the resin substrate layer 10 with a TFT (thin film transistor) layer 20a interposed therebetween.
  • TFT thin film transistor
  • the resin substrate layer 10 is made of, for example, a polyimide resin and provided as a resin substrate.
  • the TFT layer 20a includes a base coat film 11 provided on the resin substrate layer 10, a plurality of first TFTs 9a, a plurality of second TFTs 9b, and a plurality of capacitors 9c provided on the base coat film 11. It has a flattening film 19a provided on each first TFT 9a, each second TFT 9b, and each capacitor 9c.
  • a plurality of gate lines 14 are provided as the first metal layer so as to extend in the horizontal direction in the figure in parallel with each other.
  • a plurality of source lines 18f are provided as a second metal layer so as to extend in parallel with each other in the vertical direction in the drawing.
  • a plurality of power supply lines 18g are provided as second metal layers so as to extend in parallel with each other in the vertical direction in the drawing, adjacent to each source line 18f. ing.
  • a first TFT 9a, a second TFT 9b, and a capacitor 9c are provided in each sub-pixel P.
  • the second metal layer has a three-layer structure of, for example, titanium / aluminum / titanium, and can reduce the resistance of the source wiring 18f and the like. Further, the second metal layer is an example of the metal layer in the claims.
  • the base coat film 11 is composed of, for example, a single-layer film or a laminated film of an inorganic insulating film such as silicon nitride, silicon oxide, or silicon oxynitride.
  • the first TFT 9a is connected to the corresponding gate line 14 and source line 18f in each sub-pixel P, as shown in FIG.
  • the first TFT 9a includes a semiconductor layer 12a provided in an island shape on the base coat film 11, a gate insulating film 13 provided to cover the semiconductor layer 12a, and a gate insulating film 13
  • a gate electrode 14a provided thereon so as to overlap a part of the semiconductor layer 12a; a first interlayer insulating film 15 and a second interlayer insulating film 17 provided in order to cover the gate electrode 14a;
  • a source electrode 18a and a drain electrode 18b are provided on the film 17 and are spaced apart from each other.
  • the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 are each formed of a single-layer film or a stacked film of an inorganic insulating film such as silicon nitride, silicon oxide, or silicon oxynitride. .
  • the second TFT 9b is connected to the corresponding first TFT 9a and the power supply line 18g in each sub-pixel P, as shown in FIG.
  • the second TFT 9b includes a semiconductor layer 12b provided in an island shape on the base coat film 11, a gate insulating film 13 provided to cover the semiconductor layer 12b, and a gate insulating film 13
  • a gate electrode 14b provided overlying a part of the semiconductor layer 12b thereon; a first interlayer insulating film 15 and a second interlayer insulating film 17 provided in order to cover the gate electrode 14b;
  • a source electrode 18c and a drain electrode 18d are provided on the film 17 and are spaced apart from each other.
  • first gate 9a and the second TFT 9b of the top gate type are illustrated, but the first TFT 9a and the second TFT 9b may be a bottom gate type TFT.
  • the capacitor 9c is connected to the corresponding first TFT 9a and power supply line 18g in each sub-pixel P, as shown in FIG.
  • the capacitor 9c includes a lower conductive layer 14c formed in the same layer with the same material as the gate electrode, and a first interlayer insulating film 15 provided so as to cover the lower conductive layer 14c. And an upper conductive layer 16 provided on the first interlayer insulating film 15 so as to overlap the lower conductive layer 14c.
  • the flattening film 19a is formed of an inexpensive organic resin material such as an acrylic resin or an epoxy resin. Note that the flattening film 19a may be formed of a polyimide resin.
  • the organic EL element 30 includes a plurality of first electrodes (reflection electrodes) 21 sequentially provided on the planarization film 19a and a plurality of second electrodes (faces) opposed to the first electrodes 21.
  • An electrode (transparent electrode) 24, a plurality of organic EL layers 23 provided between the first electrode 21 and the second electrode 24, and a plurality of edge covers 22 are provided.
  • the plurality of first electrodes 21 function as reflection electrodes that reflect light emitted from the organic EL layer (light-emitting layer), and as shown in FIG.
  • the reflective electrodes 19a are provided in a matrix on the reflective electrodes 19a.
  • the first electrode 21 is connected to the drain electrode 18d of each second TFT 9b via a contact hole formed in the flattening film 19a.
  • the first electrode 21 has a function of injecting holes (holes) into the organic EL layer 23.
  • the first electrode 21 is more preferably formed of a material having a large work function in order to improve the efficiency of hole injection into the organic EL layer 23.
  • the first electrode 21 for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au) , Calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb) And a metal material such as lithium fluoride (LiF).
  • the material forming the first electrode 21 is, for example, magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / oxidation Such as astatine (AtO 2 ), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), or lithium fluoride (LiF) / calcium (Ca) / aluminum (Al) It may be an alloy. Further, the material forming the first electrode 21 is, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), and indium zinc oxide (IZO). There may be. Further, the first electrode 21 may be formed by stacking a plurality of layers made of the above materials. Note that examples of the material having a large work function include indium tin oxide (ITO) and indium zinc oxide (IZO).
  • the edge cover 22 is provided in a grid pattern on the TFT layer 20a so as to cover the periphery of each first electrode 21, as shown in FIG.
  • the edge cover 22 is provided between the light emitting areas Lr, Lg, Lb and functions as a partition for partitioning the light emitting areas Lr, Lg, Lb.
  • an organic resin material such as a polyimide resin and an SOG (spin-on glass) resin can be cited.
  • each of the organic EL layers 23 has a hole injection layer 1, a hole transport layer 2, a light emitting layer 3, an electron transport layer 4, and an electron injection layer provided on the first electrode 21 in order. It has a layer 5.
  • the hole injection layer 1 is also called an anode buffer layer, and has a function of making the energy levels of the first electrode 21 and the organic EL layer 23 close to each other and improving the efficiency of hole injection from the first electrode 21 to the organic EL layer 23.
  • a material constituting the hole injection layer for example, a triazole derivative, an oxadiazole derivative, an imidazole derivative, a polyarylalkane derivative, a pyrazoline derivative, a phenylenediamine derivative, an oxazole derivative, a styrylanthracene derivative, a fluorenone derivative, Hydrazone derivatives, stilbene derivatives and the like can be mentioned.
  • the hole transport layer 2 has a function of improving the efficiency of transporting holes from the first electrode 21 to the organic EL layer 23.
  • the material constituting the hole transport layer 2 include porphyrin derivatives, aromatic tertiary amine compounds, styrylamine derivatives, polyvinylcarbazole, poly-p-phenylenevinylene, polysilane, triazole derivatives, oxadiazole Derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amine-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, hydrogenated amorphous silicon, Examples include hydrogenated amorphous silicon carbide, zinc sulfide, and zinc selenide.
  • the light emitting layer 3 when a voltage is applied by the first electrode 21 and the second electrode 24, holes and electrons are injected from the first electrode 21 and the second electrode 24, respectively, and the holes and electrons recombine. Area.
  • the light emitting layer 3 is formed of a material having high luminous efficiency. Examples of the material constituting the light emitting layer 3 include a metal oxinoid compound [8-hydroxyquinoline metal complex], a naphthalene derivative, an anthracene derivative, a diphenylethylene derivative, a vinylacetone derivative, a triphenylamine derivative, a butadiene derivative, and a coumarin derivative.
  • the electron transport layer 4 has a function of efficiently moving electrons to the light emitting layer 3.
  • a material constituting the electron transport layer 4 for example, as an organic compound, an oxadiazole derivative, a triazole derivative, a benzoquinone derivative, a naphthoquinone derivative, an anthraquinone derivative, a tetracyanoanthraquinodimethane derivative, a diphenoquinone derivative, or a fluorenone derivative , Silole derivatives, metal oxinoid compounds and the like.
  • the electron injection layer 5 has a function of making the energy levels of the second electrode 24 and the organic EL layer 23 close to each other and improving the efficiency of injecting electrons from the second electrode 24 into the organic EL layer 23.
  • the drive voltage of the organic EL element 30 can be reduced.
  • the electron injection layer 5 is also called a cathode buffer layer.
  • a material constituting the electron injection layer 5 for example, lithium fluoride (LiF), magnesium fluoride (MgF 2 ), calcium fluoride (CaF 2 ), strontium fluoride (SrF 2 ), barium fluoride Examples thereof include an inorganic alkali compound such as (BaF 2 ), aluminum oxide (Al 2 O 3 ), and strontium oxide (SrO).
  • the second electrode 24 is provided so as to cover each of the organic EL layers 23 and the edge cover 22, as shown in FIG.
  • the second electrode 24 has a function of injecting electrons into the organic EL layer 23.
  • the second electrode 24 is more preferably made of a material having a small work function in order to improve the efficiency of electron injection into the organic EL layer 23.
  • the second electrode 24 for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au) , Calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb) , Lithium fluoride (LiF) and the like.
  • the second electrode 24 is made of, for example, magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / astatin oxide (AtO 2). ), Lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), and lithium fluoride (LiF) / calcium (Ca) / aluminum (Al). You may.
  • the second electrode 24 may be formed of a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), and indium zinc oxide (IZO), for example. .
  • the second electrode 24 may be formed by stacking a plurality of layers made of the above materials.
  • the material having a small work function include magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), and sodium (Mg).
  • (Na) / potassium (K) lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), lithium fluoride (LiF) / calcium (Ca) / aluminum (Al) And the like.
  • the organic EL display device 50a includes a sealing film 28 that covers the organic EL element 30.
  • the sealing film 28 is provided to cover the second electrode 24, a first inorganic film 25, an organic film 26 provided to cover the first inorganic film 25, and provided to cover the organic film 26. And a function of protecting the organic EL layer 23 from moisture and oxygen.
  • the first inorganic film 25 and the second inorganic film 27 are made of, for example, silicon nitride (SiNx (x) such as silicon oxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), and trisilicon tetranitride (Si 3 N 4 ). Is a positive number)) and an inorganic material such as silicon carbonitride (SiCN).
  • the organic film 26 is made of, for example, an organic material such as acrylate, polyurea, parylene, polyimide, and polyamide.
  • the first TFT 9a is turned on by inputting a gate signal to the first TFT 9a via the gate line 14, and the gate electrode of the second TFT 9b is connected via the source line 18f.
  • a predetermined voltage corresponding to the source signal is written to 14b and the capacitor 9c, the magnitude of the current from the power supply line 18g is defined based on the gate voltage of the second TFT 9b, and the defined current is supplied to the organic EL layer 23.
  • the light-emitting layer 3 of the organic EL layer 23 emits light to display an image.
  • the gate voltage of the second TFT 9b is held by the capacitor 9c, so that the light emitting layer 3 emits light until the gate signal of the next frame is input. Will be maintained.
  • the organic EL display device 50a of the present embodiment is formed, for example, by forming a TFT layer 20a and an organic EL element 30 on the surface of a resin substrate layer 10 formed on a glass substrate by using a known method. It can be manufactured by peeling.
  • FIG. 6 is a plan view of a bent portion G of the organic EL display device 50a according to the present embodiment
  • FIG. 7 is a sectional view taken along line AA of FIG.
  • FIG. 8 is a sectional view taken along line BB of FIG.
  • the organic EL display device 50a includes a resin substrate layer 10, an inorganic laminated film 36 and a frame flattening film 37 provided on the surface of the resin substrate layer 10 in the bending region E.
  • a plurality of frame wirings are provided on the surface of the frame flattening film 37 to connect the gate conductive layers 43a and 43b, and a surface protection layer 39 provided so as to cover the frame wirings.
  • the gate conductive layer 43a is electrically connected to a signal wiring (a wiring in the display area D such as the gate wiring 14, the source wiring 18f, and the power supply line 18g) provided in the TFT layer 20a in the display area D. It is provided to extend to the side.
  • the gate conductive layer 43b is provided so as to extend to the terminal portion T.
  • the frame flattening film 37 is formed in the same layer and the same material as the flattening film 19a. As shown in FIG. 7, the frame flattening film 37 is provided so as to straddle the opening S.
  • the plurality of frame wirings 38 are electrically connected to signal wirings in the display area D, and are provided on the frame flattening film 37 so as to cross the opening S, as shown in FIGS.
  • the surface protection layer 39 is configured to cover the frame wiring 38. Therefore, the frame wiring 38 is protected by the surface protection layer 39.
  • the frame wiring 38 is formed of the same material as the source wiring 18f (width: 3 to 10 ⁇ m), which is the above-described metal layer, and the center-to-center distance (pitch) P shown in FIG. 6 is set to 10 to 20 ⁇ m. Have been.
  • the surface protection layer 39 is formed of the same material as the edge cover 22 described above, and has a configuration in which the surface protection layer 39 is formed in the same layer as the edge cover 22.
  • the opening S is open from one end to the other end of the frame region F along the bent portion G, and as shown in FIGS. 37 is provided in a band shape so as to cover the opening S and the end of the inorganic laminated film 36 on the opening S side, and is formed of, for example, an organic resin material such as a polyimide resin.
  • the surface protective layer 39 is provided in a band shape with the frame wiring 38 interposed therebetween so as to cover the edge of the band-shaped frame flattening film 37.
  • the inorganic laminated film 36 is at least one layer of an inorganic insulating film constituting the TFT layer 20a, and as shown in FIG. 7, the base coat film 11, the gate insulating film 13, and the base coat film 11 sequentially laminated on the resin substrate layer 10.
  • An interlayer insulating film 40 including a first interlayer insulating film 15 and a second interlayer insulating film 17 is provided.
  • the inorganic laminated film 36 is also provided in the frame region F.
  • gate conductive layers 43a and 43b are provided.
  • the base coat film 11, the gate insulating film 13, and the interlayer insulating film 40 of the inorganic laminated film 36 are not provided, and an opening S is formed in the inorganic laminated film 36.
  • the opening S is covered with a frame flattening film 37.
  • the frame can be bent at an angle of 180 ° at the maximum.
  • the frame flattening film 37 is provided in the form of an island for each of the plurality of frame wirings 38, and the frame wiring 38 is formed on the surface of the frame flattening film 37. It is configured to cover the entire side surface.
  • the frame flattening film 37 is etched. Can be prevented. As a result, generation of gas (eg, chlorine gas) due to etching of the frame flattening film 37 can be prevented, and contamination in the chamber can be prevented.
  • gas eg, chlorine gas
  • the surface protection layer 39 is filled in the opening S, and the surface protection layer 39 covers the plurality of frame wirings 38.
  • the TFT layer 20a (the base coat film 11, the first TFT 9a, the second TFT 9b, the capacitor 9c, the first TFT 9a, and the flattening film 19a) is formed on the surface of the resin substrate layer 10 made of a polyimide resin using a known method. I do.
  • the inorganic laminated film 36 (the base coat film 11, the gate insulating film 13, and the interlayer insulating film 40) is formed on the surface of the resin substrate layer 10; An opening S that exposes the upper surface of the resin substrate layer 10 through the inorganic insulating film 36 is formed in the insulating film 36 by dry etching.
  • a plurality of frame flattening films 37 are formed in the opening S in an island shape (strip shape).
  • a photosensitive acrylic resin is applied on the base substrate 10 by a spin coating method, and a predetermined exposure amount (for example, 150 mJ / cm 2) is used using an exposure mask having a predetermined exposure pattern. ), And development is performed using an alkali developing solution, thereby forming a flattening film 19a having a thickness of 1 to 1.5 ⁇ m, for example. After the development, post-baking is performed under predetermined conditions (for example, at 220 ° C. for 60 minutes).
  • the organic EL element 30 (the first electrode 21, the edge cover 22, the organic EL layer 23 (the hole injection layer 1, the hole transport layer 2, the light emitting layer) is formed on the surface of the TFT layer 20a using a known method. 3, an electron transport layer 4, an electron injection layer 5), and a second electrode 24) are formed.
  • a metal layer is formed on the resin substrate layer 10 so as to cover the entire surface and side surfaces of the frame flattening film 37, and then the metal layer is patterned by dry etching. As shown in FIG. 8, a frame wiring 38 that covers the entire surface and side surfaces of the frame flattening film 37 is formed.
  • the frame flattening film 37 can be prevented from being etched, and the gas (for example, generation of chlorine gas) can be prevented.
  • a surface protection layer 39 that fills the opening S and covers the plurality of frame wirings 38 is formed.
  • the frame wiring 38 is formed so as to cover the frame flattening film 37 across the opening S.
  • an inorganic insulating film such as a silicon nitride film is formed to a thickness of about several tens nm to several ⁇ m by a plasma CVD (Chemical Vapor Deposition) method so as to cover the organic EL element 18. 25 are formed.
  • a plasma CVD Chemical Vapor Deposition
  • an organic resin material such as acrylate is discharged to a thickness of about several ⁇ m to several tens ⁇ m by an ink jet method on the entire surface of the substrate on which the first inorganic film 25 is formed, thereby forming the organic film 26.
  • an inorganic insulating film such as a silicon nitride film is formed to a thickness of about several tens nm to several ⁇ m by a plasma CVD method to form a second inorganic film 27.
  • a sealing film 28 including the first inorganic film 25, the organic film 26, and the second inorganic film 27 is formed.
  • the organic EL display device 50a of the present embodiment can be manufactured.
  • FIG. 9 and 10 are cross-sectional views of a bent portion of the organic EL display device according to the present embodiment. Note that the overall configuration of the organic EL display device is the same as that of the above-described first embodiment, and a detailed description thereof will be omitted here. The same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.
  • the frame flattening film 37 is provided on the base coat film 11 in the bent portion G. Accordingly, disconnection of the source line 38 at the bent portion G can be prevented.
  • the base coat film 11 can be formed on the surface of the resin substrate layer 10 by, for example, forming a silicon oxide film, a silicon nitride film, or the like to a thickness of about 50 nm to 1000 nm by a CVD method. in is formed to a thickness T 1 of the base coat film 11 is smaller than the thickness T 2 of the base coat film 11 in the display region D (other than bent portion G) of the bent portion G.
  • the resin material forming the frame flattening film 37 is irradiated by performing exposure processing (halftone exposure processing) using a halftone mask as a photomask.
  • the exposure amount to be controlled may be controlled to form the frame flattening film 37 having a gentle cross-sectional shape (such as a substantially circular shape or a substantially elliptical shape).
  • the cross-sectional shape of the frame wiring covering the entire surface and side surfaces of the frame flattening film 37 has a substantially arc shape.
  • an organic EL layer having a five-layer structure of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer is exemplified.
  • a three-layer structure of a hole injection layer and a hole transport layer, a light emitting layer, and an electron transport layer and an electron injection layer may be employed.
  • the organic EL display device in which the first electrode is used as an anode and the second electrode is used as a cathode is exemplified.
  • the present invention inverts the stacked structure of the organic EL layer and uses the first electrode as a cathode. It can be applied to an organic EL display device using the second electrode as an anode.
  • the organic EL display device in which the electrode of the TFT connected to the first electrode is used as the source electrode is exemplified.
  • the electrode of the TFT connected to the first electrode is referred to as the drain electrode. It can also be applied to an organic EL display device called.
  • the organic EL display device is exemplified as the display device.
  • the present invention provides a display device including a plurality of light emitting elements driven by current, for example, a light emitting element using a quantum dot-containing layer.
  • the present invention can be applied to a display device having a QLED (Quantum-dot-light-emitting-diode).
  • the present invention is useful for a display device such as an organic EL display device.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Dans la présente invention, une partie d'ouverture (S) est formée dans un film stratifié inorganique (36) au niveau d'une section courbée (G) d'un dispositif d'affichage électroluminescent organique (50a), un film d'aplatissement (37) de cadre est disposé dans la partie d'ouverture (S), et de multiples lignes de câblage (38) de cadre sont disposées sur le film d'aplatissement (37) de cadre. Le film d'aplatissement (37) de cadre est disposé en forme d'îlot pour chaque ensemble des lignes de câblage (38) de cadre, et les lignes de câblage (38) de cadre sont formées de manière à recouvrir entièrement la face avant et les faces latérales du film d'aplatissement (37) de cadre.
PCT/JP2018/027174 2018-07-19 2018-07-19 Dispositif d'affichage et son procédé de fabrication WO2020017007A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021260901A1 (fr) * 2020-06-25 2021-12-30 シャープ株式会社 Dispositif d'affichage et son procédé de fabrication

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011008969A (ja) * 2009-06-23 2011-01-13 Canon Inc 表示装置
US20160247873A1 (en) * 2014-03-11 2016-08-25 Boe Technology Group Co., Ltd. Oled array substrate, method for fabricating the same, and display device
JP2018054963A (ja) * 2016-09-30 2018-04-05 株式会社ジャパンディスプレイ 半導体装置、表示装置、および半導体装置の製造方法
JP2018078057A (ja) * 2016-11-11 2018-05-17 株式会社ジャパンディスプレイ 表示装置
WO2018135127A1 (fr) * 2017-01-20 2018-07-26 株式会社ジャパンディスプレイ Dispositif d'affichage

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011008969A (ja) * 2009-06-23 2011-01-13 Canon Inc 表示装置
US20160247873A1 (en) * 2014-03-11 2016-08-25 Boe Technology Group Co., Ltd. Oled array substrate, method for fabricating the same, and display device
JP2018054963A (ja) * 2016-09-30 2018-04-05 株式会社ジャパンディスプレイ 半導体装置、表示装置、および半導体装置の製造方法
JP2018078057A (ja) * 2016-11-11 2018-05-17 株式会社ジャパンディスプレイ 表示装置
WO2018135127A1 (fr) * 2017-01-20 2018-07-26 株式会社ジャパンディスプレイ Dispositif d'affichage

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021260901A1 (fr) * 2020-06-25 2021-12-30 シャープ株式会社 Dispositif d'affichage et son procédé de fabrication

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