WO2020042847A1 - 液晶显示面板 - Google Patents

液晶显示面板 Download PDF

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Publication number
WO2020042847A1
WO2020042847A1 PCT/CN2019/098145 CN2019098145W WO2020042847A1 WO 2020042847 A1 WO2020042847 A1 WO 2020042847A1 CN 2019098145 W CN2019098145 W CN 2019098145W WO 2020042847 A1 WO2020042847 A1 WO 2020042847A1
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Prior art keywords
shielding structure
color
edge
filter
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/098145
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English (en)
French (fr)
Inventor
曹武
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Wuhan China Star Optoelectronics Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Technology Co Ltd
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Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Technology Co Ltd
Priority to US16/493,299 priority Critical patent/US11079639B2/en
Publication of WO2020042847A1 publication Critical patent/WO2020042847A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings

Definitions

  • the invention relates to a liquid crystal display panel, which can reduce the barrier effect of a grid light-shielding strip, and avoid problems such as reduction of polyimide (PI) liquid and liquid crystal (Liquid Crystal, LC) diffusivity or introduction of alignment dark lines. .
  • PI polyimide
  • Liquid Crystal, LC liquid crystal
  • the thickness of the black spacer film layer is relatively large, generally more than 3um.
  • COA Color Filter On Array
  • the substrate has a complicated terrain and poor flatness.
  • the complex terrain on this type of array substrate may affect the alignment liquid. Coating and diffusion of liquid crystal.
  • the black spacer display panel shown in FIG. 1 and FIG. 2 which includes a substrate 90.
  • the substrate 90 is provided with a plurality of data lines 91 and a plurality of gate lines 92.
  • the data lines 91 and the gate lines 92 intersect to form a plurality of Pixel unit.
  • the first metal layer 941 and the second metal layer 942 stacked in each pixel unit form a storage capacitor 94 (Storage Capacitor, Cst) of the pixel unit.
  • the pixel unit is further provided with a color filter 93 (FIG. 1 only shows a part of the outline of the color filter near the gate line), and an edge 931 of the color filter 93 covers the storage capacitor 94. on.
  • a gate light shielding structure 95 for shielding a gap between two adjacent pixel units is also provided above the gate line 92, and an edge 951 of the gate light shielding structure 95 is located in the color filter. As shown in the cross-sectional view of FIG. 2, because the color filter 93, the gate light shielding structure 95, and the storage capacitor 94 are stacked on each other to form a large step, or even a horn, it will affect the alignment liquid in the subsequent box-making process. Coating and liquid crystal flow.
  • the present invention provides a liquid crystal display panel with reduced blocking wall effect, which can reduce the blocking effect of the grid light-shielding bar.
  • PI polyimide
  • LC liquid crystal
  • the main object of the present invention is to provide a liquid crystal display panel with reduced barrier effect, including:
  • a substrate provided with a plurality of data lines and a plurality of gate lines on the substrate, the data lines crossing the gate lines to form a plurality of pixel units, and each pixel unit has a metal pattern layer, a filter color resistance, And gate light shielding structure;
  • the metal pattern layer is disposed on the substrate
  • the filter color block is disposed on the metal pattern layer
  • the gate light-shielding structure is disposed above the gate line and is used to block a gap between two adjacent pixel units. An edge of the gate light-shielding structure is located in the color filter. The gate light shielding structure is inwardly contracted to form a retracted portion in a direction away from the color filter.
  • each of the filter color resists has a color resist edge, and the color resist edges are stacked on a part of the metal pattern layer; and the gate light shielding structure has a stack The edge of the light-shielding structure provided on the edge of the color resist, and the recessed portion is formed on the edge of the light-shielding structure and is located above the metal pattern layer.
  • the retraction portion of the gate light-shielding structure is stacked on the edge of the color resistance of the color filter, and the retraction portion of the gate light-shielding structure is The overlapping width with the color resist edge of the filter color resist is smaller than the overlap width between the edge of the light shielding structure of the gate light shielding structure and the color resist edge of the filter color resist.
  • the gate light-shielding structure is a black spacer and / or a black matrix.
  • the color resistance edge of the color filter includes a first tapered portion
  • the retraction portion of the gate light shielding structure includes a second tapered portion.
  • the second tapered portion is stacked on the first tapered portion of the color filter.
  • the retracted portion of the gate light-shielding structure and the color resist edges of the filter color resist are aligned with each other and do not overlap each other.
  • the retracted portion of the gate light-shielding structure and the color resist edge of the filter color resist are spaced apart from each other without overlapping each other.
  • the metal pattern layer includes a first metal layer and a second metal layer stacked on the first metal layer, wherein the first metal layer and the second metal layer The metal layer is used to form an electronic component.
  • an area of the second metal layer of the metal pattern layer is larger than that of the first metal layer, and the recessed portion of the gate light shielding structure is located on the second metal layer. Above without exceeding the edge of the second metal layer.
  • the electronic component is a storage capacitor.
  • Another object of the present invention is to provide a liquid crystal display panel, including:
  • a substrate provided with a plurality of data lines and a plurality of gate lines on the substrate, the data lines crossing the gate lines to form a plurality of pixel units, and each pixel unit has a metal pattern layer, a filter color resistance, And gate light shielding structure;
  • the metal pattern layer is disposed on the substrate
  • the filter color block is disposed on the metal pattern layer
  • the gate light-shielding structure is disposed above the gate line and is used to block a gap between two adjacent pixel units. An edge of the gate light-shielding structure is located in the color filter. A gate light-shielding structure is inwardly contracted to form a recessed portion in a direction away from the color filter;
  • each of the filter color resists has a color resist edge, and the color resist edge is stacked on a part of the metal pattern layer; and the gate light shielding structure has a stacked edge on the color resist edge.
  • the recessed portion is formed on the edge of the light shielding structure on the edge of the light shielding structure and is located above the metal pattern layer;
  • the shrinking portion of the gate light shielding structure is stacked on the edge of the color resistance of the filter color resistance, and the shrinking portion of the gate light shielding structure and the filter color resistance are stacked
  • the overlapping width of the color resistance edge is smaller than the overlapping width of the light shielding structure edge of the gate light shielding structure and the color resistance edge of the filter color resistance;
  • the gate light shielding structure includes a black spacer and / or a black matrix.
  • the color resistance edge of the color filter includes a first tapered portion
  • the retraction portion of the gate light shielding structure includes a second tapered portion.
  • the second tapered portion is stacked on the first tapered portion of the color filter.
  • Another object of the present invention is to provide a liquid crystal display panel, including:
  • a substrate provided with a plurality of data lines and a plurality of gate lines on the substrate, the data lines crossing the gate lines to form a plurality of pixel units, and each pixel unit has a metal pattern layer, a filter color resistance, And gate light shielding structure;
  • the metal pattern layer is disposed on the substrate
  • the filter color block is disposed on the metal pattern layer
  • the gate light-shielding structure is disposed above the gate line and is used to block a gap between two adjacent pixel units. An edge of the gate light-shielding structure is located in the color filter. A gate light-shielding structure is inwardly contracted to form a recessed portion in a direction away from the color filter;
  • each of the filter color resists has a color resist edge, and the color resist edge is stacked on a part of the metal pattern layer; and the gate light shielding structure has a stacked edge on the color resist edge.
  • the recessed portion is formed on the edge of the light shielding structure on the edge of the light shielding structure and is located above the metal pattern layer;
  • the retraction portion of the gate light-shielding structure and the color-resistance edge of the filter color resistor are aligned with each other and do not overlap each other, or the retraction portion of the gate light-shielding structure and the The color-resistance edges of the filter color-resistance are spaced apart from each other without overlapping;
  • the gate light shielding structure includes a black spacer and / or a black matrix.
  • the metal pattern layer includes a first metal layer and a second metal layer stacked on the first metal layer, wherein the first metal layer and the second metal layer The metal layer is used to form an electronic component.
  • an area of the second metal layer of the metal pattern layer is larger than that of the first metal layer, and the recessed portion of the gate light shielding structure is located on the second metal layer. Above without exceeding the edge of the second metal layer.
  • the present invention has the following advantages: the gate light-shielding structure corresponding to the gate line forms the shrinkage portion at the metal pattern layer, reducing the gate light-shielding structure and the metal pattern layer And the thickness at the overlap of the three filter color resists, or the retraction portion does not overlap with the filter color resists, so that the light shielding structure formed at the overlap can be reduced.
  • the thickness of the barrier wall flattens the terrain at the overlap, thereby improving the fluidity and diffusivity of the PI liquid and LC, and avoiding causing dark lines or light leakage of the display panel.
  • FIG. 1 is a partially enlarged plan view of a prior art liquid crystal display panel, wherein FIG. 1 only shows a part of the outline of a color filter near the gate line.
  • FIG. 2 is a side sectional view of a middle partial region of FIG. 1.
  • FIG 3 is a partially enlarged plan view of a first embodiment of a liquid crystal display panel according to the present invention.
  • FIG. 4 is a partial enlarged view of FIG. 3, wherein FIG. 4 only shows a part of the outline of the color filter near the gate line side.
  • FIG. 5 is a side sectional view of a retracted portion of the gate light shielding structure in FIG. 3.
  • FIG. 6 is a side cross-sectional view of a retracted portion of a gate light-shielding structure of a second embodiment of a liquid crystal display panel of the present invention.
  • FIG. 7 is a side sectional view of a retracted portion of a gate light shielding structure of a third embodiment of a liquid crystal display panel of the present invention.
  • the first embodiment of the liquid crystal display panel with reduced barrier effect includes a substrate 10 on which a plurality of data lines 11 and a plurality of gate lines 12 are disposed.
  • the data line 11 intersects the gate line 12 to form a plurality of pixel units 13.
  • Each pixel unit 13 has a metal pattern layer 15, a color filter 20, and a gate light-shielding structure.
  • the metal pattern layer 15 is disposed on the substrate 10.
  • the color filter 20 is disposed on the metal pattern layer 15.
  • the gate light-shielding structure is disposed above the gate line 12 for shielding a gap between two adjacent pixel units 13. An edge of the gate light-shielding structure is located in the color filter 20.
  • a shrinkage portion 35 is formed inwardly on the gate light-shielding structure in a direction away from the color filter 20.
  • the metal pattern layer 15 includes a first metal layer 151 and a second metal layer 152 stacked on the first metal layer 151, wherein the first metal layer 151 and the second metal layer 152 are used for To form an electronic component, such as a storage capacitor.
  • the filter color resist 20 has a color resist edge 21 which is stacked on a part of the metal pattern layer 15; and the gate light-shielding structure 30 has a stack on the color The light-shielding structure edge 31 on the resisting edge 21, and the retracted portion 35 is formed on the light-shielding structure edge 31 and is located above the metal pattern layer.
  • the retracted portion 35 may be rectangular.
  • the color resist edge 21 of the filter color resist 20 includes a first tapered portion 211 located inside the color resist edge 21, and the first tapered portion 211 faces the filter color resist. The direction of the inner edge of 20 gradually decreases to decrease the thickness.
  • the retracted distance 35 of the gate light-shielding structure 30 is smaller than or equal to 3um compared to the edge 31 of the light-shielding structure.
  • a minimum distance D1 between a turning point P phase of the retraction portion 35 of the gate light shielding structure 30 and a nearest edge of the metal pattern layer 15 is equal to or greater than 2um, as shown in FIG. 4. The setting of the minimum distance D1 can ensure that the gate light-shielding structure 30 will not cover the area other than the metal pattern layer 15 and accidentally cover the light-emitting area of the liquid crystal display panel.
  • the retracted portion 35 of the gate light-shielding structure 30 is stacked on the color-resistance edge 21 of the color filter 20, and the gate light-shielding structure 30
  • the overlapping width W of the shrinking portion 35 and the color-resistance edge 21 of the filter color resist 20 is smaller than the light-shielding structure edge 31 of the gate light-shielding structure 30 and the filter color resist 20
  • the overlapping width of the color resist edge 21 is
  • the retracted portion 35 of the gate light shielding structure 30 includes a second tapered portion 351, and the second tapered portion 351 is stacked on the first tapered portion 211 of the color filter 20. On, as shown in Figure 5.
  • the second tapered portion 351 is gradually reduced toward the inner edge of the color gate light shielding structure 30 to reduce the thickness.
  • an area of the second metal layer 152 of the metal pattern layer 15 is larger than that of the first metal layer 151, and the recessed portion 35 of the gate light shielding structure 30 is located on the second metal layer 152. Above without exceeding the edge of the second metal layer 152.
  • the second embodiment of the liquid crystal display panel with reduced barrier effect according to the present invention is substantially the same as the first embodiment, except that the shrinkage of the gate light-shielding structure 30 of the second embodiment is the same.
  • the portion 35 and the color-resistance edge 21 of the filter color-resistance 20 are aligned with each other and do not overlap each other.
  • the third embodiment of the liquid crystal display panel with reduced barrier effect according to the present invention is substantially the same as the first embodiment, except that the shrinkage of the gate light shielding structure 30 of the third embodiment is the same.
  • the portion 35 is separated from the color-resistance edge 21 of the filter color-resistance 20 by a distance D2 and does not overlap each other.
  • the distance D2 is less than or equal to 1 um.
  • the present invention has the following advantages: the gate light shielding structure 30 corresponding to the gate light shielding strip 3 of the gate line 12 forms the shrinkage portion 35 at the metal pattern layer 15 to reduce
  • the thickness of the gate light-shielding structure 30, the metal pattern layer 15, and the filter color resist 20 are overlapped (the first embodiment), or the retraction portion 35 is not in contact with the filter.
  • the color resistances 20 are stacked on each other (the second embodiment and the third embodiment), so that the thickness of the barrier wall formed by the gate light shielding structure 30 at the overlap can be reduced, and the terrain at the overlap can be flattened. Therefore, the fluidity and the diffusivity of the polyimide (PI) liquid and the liquid crystal (LC) can be improved, and the dark streaks or light leakage of the display panel can be avoided.
  • PI polyimide
  • LC liquid crystal

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Optical Filters (AREA)

Abstract

一种液晶显示面板，包括：基板（10），基板（10）上设置有多条数据线（11）以及多条栅极线（12），数据线（11）与栅极线（12）交叉形成多个像素单元（13），每一像素单元（13）具有金属图形层（15）、滤光色阻（20）、以及栅极遮光结构（30）；金属图形层（15）设置在基板（10）上；滤光色阻（20）覆盖设置在金属图形层（15）上；以及栅极遮光结构（30），设置在栅极线（12）上方，用于遮挡相邻两像素单元（13）之间的间隙，栅极遮光结构（30）的边缘位于滤光色阻（20）内，在栅极遮光结构（30）上朝远离滤光色阻（20）的方向内缩形成一退缩部（35）。退缩部（35）减少色阻边缘（21）与遮光结构边缘（31）交叠的程度从而能有效降低栅极遮光结构（30）在交叠处形成的挡墙厚度。

Description

液晶显示面板 技术领域
本发明是关于一种液晶显示面板，其可降低栅极遮光条挡墙效应，避免聚酰亚胺(Polyimide, PI)液及液晶(Liquid Crystal, LC)扩散性降低或引入配向暗纹等问题。
 背景技术
现有技术的液晶显示面板的黑色间隔物(BPS)面板结构中，黑色间隔物膜层厚度较大，一般达3um以上。在具有黑色间隔物的色阻阵列(Color Filter On Array, COA)基板中，基板地形较为复杂，平坦度较差，在后续的成盒制程中，这类阵列基板上的复杂地形恐影响配向液的涂布以及液晶的扩散。
请参照图1及图2所示的黑色间隔物显示面板，包括基板90，基板90上设置有多条数据线91以及多条栅极线92，数据线91与栅极线92交叉形成多个像素单元。
每一像素单元内层叠的第一金属层941和第二金属层942形成了该像素单元的储存电容94(Storage Capacitor, Cst)。所述像素单元内还设置有滤光色阻93（图1仅示出滤光色阻靠近栅极线所在侧的部分轮廓），滤光色阻93的边缘931覆盖设置在所述储存电容94上。
在栅极线92的上方还设有用于遮挡相邻两像素单元之间间隙的栅极遮光结构95，所述栅极遮光结构95的边缘951位于滤光色阻内。可参考图2的截面图所示，由于滤光色阻93、栅极遮光结构95以及储存电容94相互堆叠形成了较大段差，甚至形成牛角，在后续的成盒制程中将影响配向液的涂布和液晶的流动。
 技术问题
有鉴于现有技术的具有黑色间隔物的色阻基板具有挡墙效应而不利Cell制程的缺点，本发明提供一种的降低挡墙效应的液晶显示面板，其可降低栅极遮光条挡墙效应，避免聚酰亚胺(Polyimide, PI)液及液晶(Liquid Crystal, LC)扩散性降低或引入配向暗纹等问题。
 技术解决方案
本发明的主要目的在于提供一种降低挡墙效应的液晶显示面板，包括：
基板，所述基板上设置有多条数据线以及多条栅极线，所述数据线与所述栅极线交叉形成多个像素单元，每一像素单元具有金属图形层、滤光色阻、以及栅极遮光结构；
所述金属图形层设置在所述基板上；
所述滤光色阻覆盖设置在所述金属图形层上；以及
所述栅极遮光结构，设置在所述栅极线上方，用于遮挡相邻两所述像素单元之间间隙，所述栅极遮光结构的边缘位于所述滤光色阻内，在所述栅极遮光结构上朝远离所述滤光色阻的方向内缩形成一退缩部。
在本发明的一实施例中，各所述滤光色阻具有一色阻边缘，所述色阻边缘叠设在所述金属图形层的一部份上；以及所述栅极遮光结构具有一叠设在所述色阻边缘上的遮光结构边缘，所述退缩部形成在所述遮光结构边缘上，且位于所述金属图形层上方。
在本发明的一实施例中，所述栅极遮光结构的所述退缩部是叠设在所述滤光色阻的所述色阻边缘上，且所述栅极遮光结构的所述退缩部与所述滤光色阻的所述色阻边缘的重迭宽度是小于所述栅极遮光结构的所述遮光结构边缘与所述滤光色阻的所述色阻边缘的重迭宽度。
在本发明的一实施例中，所述栅极遮光结构黑色间隔物及/或黑色矩阵。
在本发明的一实施例中，所述滤光色阻的所述色阻边缘包括一第一渐缩部，所述栅极遮光结构的所述退缩部包括一第二渐缩部，所述第二渐缩部叠设在所述滤光色阻的第一渐缩部上。
在本发明的一实施例中，所述栅极遮光结构的所述退缩部与所述滤光色阻的所述色阻边缘相互切齐不相互叠设。
在本发明的一实施例中，所述栅极遮光结构的所述退缩部与所述滤光色阻的所述色阻边缘相隔一间距而不相互叠设。
在本发明的一实施例中，所述金属图形层包括有一第一金属层以及一叠设在所述第一金属层上的第二金属层，其中所述第一金属层与所述第二金属层用于形成一电子元件。
在本发明的一实施例中，所述金属图形层的所述第二金属层面积大于所述第一金属层，且所述栅极遮光结构的所述退缩部是位于所述第二金属层上方而不超出所述第二金属层的边缘。
在本发明的一实施例中，所述电子元件为一储存电容。
本发明的另一目的在于提供一种液晶显示面板，包括：
基板，所述基板上设置有多条数据线以及多条栅极线，所述数据线与所述栅极线交叉形成多个像素单元，每一像素单元具有金属图形层、滤光色阻、以及栅极遮光结构；
所述金属图形层设置在所述基板上；
所述滤光色阻覆盖设置在所述金属图形层上；以及
所述栅极遮光结构，设置在所述栅极线上方，用于遮挡相邻两所述像素单元之间间隙，所述栅极遮光结构的边缘位于所述滤光色阻内，在所述栅极遮光结构上朝远离所述滤光色阻的方向内缩形成一退缩部；
其中，各所述滤光色阻具有一色阻边缘，所述色阻边缘叠设在所述金属图形层的一部份上；以及所述栅极遮光结构具有一叠设在所述色阻边缘上的遮光结构边缘，所述退缩部形成在所述遮光结构边缘上，且位于所述金属图形层上方；
其中，所述栅极遮光结构的所述退缩部是叠设在所述滤光色阻的所述色阻边缘上，且所述栅极遮光结构的所述退缩部与所述滤光色阻的所述色阻边缘的重迭宽度是小于所述栅极遮光结构的所述遮光结构边缘与所述滤光色阻的所述色阻边缘的重迭宽度；
其中，所述栅极遮光结构包括黑色间隔物及/或黑色矩阵。
在本发明的一实施例中，所述滤光色阻的所述色阻边缘包括一第一渐缩部，所述栅极遮光结构的所述退缩部包括一第二渐缩部，所述第二渐缩部叠设在所述滤光色阻的第一渐缩部上。
本发明的又一目的在于提供一种液晶显示面板，包括：
基板，所述基板上设置有多条数据线以及多条栅极线，所述数据线与所述栅极线交叉形成多个像素单元，每一像素单元具有金属图形层、滤光色阻、以及栅极遮光结构；
所述金属图形层设置在所述基板上；
所述滤光色阻覆盖设置在所述金属图形层上；以及
所述栅极遮光结构，设置在所述栅极线上方，用于遮挡相邻两所述像素单元之间间隙，所述栅极遮光结构的边缘位于所述滤光色阻内，在所述栅极遮光结构上朝远离所述滤光色阻的方向内缩形成一退缩部；
其中，各所述滤光色阻具有一色阻边缘，所述色阻边缘叠设在所述金属图形层的一部份上；以及所述栅极遮光结构具有一叠设在所述色阻边缘上的遮光结构边缘，所述退缩部形成在所述遮光结构边缘上，且位于所述金属图形层上方；
其中，所述栅极遮光结构的所述退缩部与所述滤光色阻的所述色阻边缘相互切齐不相互叠设，或是所述栅极遮光结构的所述退缩部与所述滤光色阻的所述色阻边缘相隔一间距而不相互叠设；
其中，所述栅极遮光结构包括黑色间隔物及/或黑色矩阵。
在本发明的一实施例中，所述金属图形层包括有一第一金属层以及一叠设在所述第一金属层上的第二金属层，其中所述第一金属层与所述第二金属层用于形成一电子元件。
在本发明的一实施例中，所述金属图形层的所述第二金属层面积大于所述第一金属层，且所述栅极遮光结构的所述退缩部是位于所述第二金属层上方而不超出所述第二金属层的边缘。
 有益效果
与现有技术相比较，本发明具有下列优点：对应栅极线的所述栅极遮光结构在所述金属图形层处形成所述退缩部，降低了栅极遮光结构、所述金属图形层处、以及所述滤光色阻三者交叠处的厚度，或者，所述退缩部不与所述滤光色阻相互叠设，从而能有降低栅极遮光结构在所述交叠处形成的挡墙厚度，使所述交叠处的地形平坦化，因而能够增进PI液及LC之流动性与扩散性，避免引起显示面板的暗纹或是漏光。
为让本发明的上述内容能更明显易懂，下文特举优选实施例，配合所附图式，作详细说明如下：
 附图说明
图1是现有技术液晶显示面板的局部放大俯视图，其中图1仅示出滤光色阻靠近栅极线所在侧的部分轮廓。
图2是图1的中局部区域的侧面剖视图。
图3是本发明液晶显示面板第1实施例的局部放大俯视图。
图4是图3的局部放大图，其中图4仅示出滤光色阻靠近栅极线所在侧的部分轮廓。
图5是图3中的栅极遮光结构的退缩部的侧面剖视图。
图6是本发明液晶显示面板第2实施例的栅极遮光结构的退缩部的侧面剖视图。
图7是本发明液晶显示面板第3实施例的栅极遮光结构的退缩部的侧面剖视图。
 本发明的实施方式
请参照图3及图4，本发明降低挡墙效应的液晶显示面板的第1实施例包括：基板10，所述基板10上设置有多条数据线11以及多条栅极线12，所述数据线11与所述栅极线12交叉形成多个像素单元13，每一像素单元13具有金属图形层15、滤光色阻20、以及栅极遮光结构。
所述金属图形层15设置在所述基板10上。所述滤光色阻20覆盖设置在所述金属图形层15上。所述栅极遮光结构，设置在所述栅极线12上方，用于遮挡相邻两所述像素单元13之间间隙，所述栅极遮光结构的边缘位于所述滤光色阻20内，在所述栅极遮光结构上朝远离所述滤光色阻20的方向内缩形成一退缩部35。
所述金属图形层15包括有一第一金属层151以及一叠设在所述第一金属层151上的第二金属层152，其中所述第一金属层151与所述第二金属层152用于形成一电子元件，例如储存电容。
所述滤光色阻20具有一色阻边缘21，所述色阻边缘21叠设在所述金属图形层15的一部份上；以及所述栅极遮光结构30具有一叠设在所述色阻边缘21上的遮光结构边缘31，所述退缩部35形成在所述遮光结构边缘31上，且位于所述金属图形层上方。所述退缩部35可呈矩形。所述滤光色阻20的所述色阻边缘21包括一第一渐缩部211位在所述色阻边缘21的内侧，所述第一渐缩部211是朝着所述滤光色阻20的内侧边缘的方向逐渐缩小而减少厚度。
优选地，所述栅极遮光结构30的所述退缩部35相较于所述遮光结构边缘31的退缩距离小于或等于3um。优选地，所述栅极遮光结构30的所述退缩部35的一转折点P相与所述金属图形层15的一最近边缘的最小距离D1为等于或大于2um，如图4所示。最小距离D1的设定可确保栅极遮光结构30不会遮蔽金属图形层15以外的区域而导致意外遮盖液晶显示面板的发光区。
在本发明第1实施例中，所述栅极遮光结构30的所述退缩部35是叠设在所述滤光色阻20的所述色阻边缘21上，且所述栅极遮光结构30的所述退缩部35与所述滤光色阻20的所述色阻边缘21的重迭宽度W是小于所述栅极遮光结构30的所述遮光结构边缘31与所述滤光色阻20的所述色阻边缘21的重迭宽度。
优选地，所述栅极遮光结构30的所述退缩部35包括一第二渐缩部351，所述第二渐缩部351叠设在所述滤光色阻20的第一渐缩部211上，如图5所示。所述第二渐缩部351是朝着所述色栅极遮光结构30的内侧边缘的方向逐渐缩小而减少厚度。
优选地，所述金属图形层15的所述第二金属层152面积大于所述第一金属层151，且所述栅极遮光结构30的所述退缩部35是位于所述第二金属层152上方而不超出所述第二金属层152的边缘。
请参照图6，本发明降低挡墙效应的液晶显示面板的第2实施例与第1实施例大致相同，不同处在于，所述第2实施例的所述栅极遮光结构30的所述退缩部35与所述滤光色阻20的所述色阻边缘21相互切齐不相互叠设。
请参照图7，本发明降低挡墙效应的液晶显示面板的第3实施例与第1实施例大致相同，不同处在于，所述第3实施例的所述栅极遮光结构30的所述退缩部35与所述滤光色阻20的所述色阻边缘21相隔一间距D2而不相互叠设。所述间距D2小于或等于1um。
与现有技术相比较，本发明具有下列优点：对应栅极线12的所述栅极遮光条3的所述栅极遮光结构30在所述金属图形层15处形成所述退缩部35，降低了栅极遮光结构30、所述金属图形层15处、以及所述滤光色阻20三者交叠处的厚度（第1实施例），或者，所述退缩部35不与所述滤光色阻20相互叠设（第2实施例及第3实施例），从而能有降低栅极遮光结构30在所述交叠处形成的挡墙厚度，使所述交叠处的地形平坦化，因而能够增进聚酰亚胺(Polyimide, PI)液及液晶(Liquid Crystal, LC)之流动性与扩散性，避免引起显示面板的暗纹或是漏光。

Claims (16)

  1. 一种液晶显示面板，包括：
    基板，所述基板上设置有多条数据线以及多条栅极线，所述数据线与所述栅极线交叉形成多个像素单元，每一像素单元具有金属图形层、滤光色阻、以及栅极遮光结构；
    所述金属图形层设置在所述基板上；
    所述滤光色阻覆盖设置在所述金属图形层上；以及
    所述栅极遮光结构，设置在所述栅极线上方，用于遮挡相邻两所述像素单元之间间隙，所述栅极遮光结构的边缘位于所述滤光色阻内，在所述栅极遮光结构上朝远离所述滤光色阻的方向内缩形成一退缩部。
  2. 根据权利要求1所述的液晶显示面板，其中各所述滤光色阻具有一色阻边缘，所述色阻边缘叠设在所述金属图形层的一部份上；以及所述栅极遮光结构具有一叠设在所述色阻边缘上的遮光结构边缘，所述退缩部形成在所述遮光结构边缘上，且位于所述金属图形层上方。
  3. 根据权利要求2所述的液晶显示面板，其中所述栅极遮光结构的所述退缩部是叠设在所述滤光色阻的所述色阻边缘上，且所述栅极遮光结构的所述退缩部与所述滤光色阻的所述色阻边缘的重迭宽度是小于所述栅极遮光结构的所述遮光结构边缘与所述滤光色阻的所述色阻边缘的重迭宽度。
  4. 根据权利要求1所述的液晶显示面板，其中所述栅极遮光结构包括黑色间隔物及/或黑色矩阵。
  5. 根据权利要求2所述的液晶显示面板，其中所述滤光色阻的所述色阻边缘包括一第一渐缩部，所述栅极遮光结构的所述退缩部包括一第二渐缩部，所述第二渐缩部叠设在所述滤光色阻的第一渐缩部上。
  6. 根据权利要求2所述的液晶显示面板，其中所述栅极遮光结构的所述退缩部与所述滤光色阻的所述色阻边缘相互切齐不相互叠设。
  7. 根据权利要求2所述的液晶显示面板，其中所述栅极遮光结构的所述退缩部与所述滤光色阻的所述色阻边缘相隔一间距而不相互叠设。
  8. 根据权利要求1所述的液晶显示面板，其中所述金属图形层包括有一第一金属层以及一叠设在所述第一金属层上的第二金属层，其中所述第一金属层与所述第二金属层用于形成一电子元件。
  9. 根据权利要求8所述的液晶显示面板，其中所述金属图形层的所述第二金属层面积大于所述第一金属层，且所述栅极遮光结构的所述退缩部是位于所述第二金属层上方而不超出所述第二金属层的边缘。
  10. 根据权利要求8所述的液晶显示面板，其中所述电子元件为一储存电容。
  11. 一种液晶显示面板，包括：
    基板，所述基板上设置有多条数据线以及多条栅极线，所述数据线与所述栅极线交叉形成多个像素单元，每一像素单元具有金属图形层、滤光色阻、以及栅极遮光结构；
    所述金属图形层设置在所述基板上；
    所述滤光色阻覆盖设置在所述金属图形层上；以及
    所述栅极遮光结构，设置在所述栅极线上方，用于遮挡相邻两所述像素单元之间间隙，所述栅极遮光结构的边缘位于所述滤光色阻内，在所述栅极遮光结构上朝远离所述滤光色阻的方向内缩形成一退缩部；
    其中，各所述滤光色阻具有一色阻边缘，所述色阻边缘叠设在所述金属图形层的一部份上；以及所述栅极遮光结构具有一叠设在所述色阻边缘上的遮光结构边缘，所述退缩部形成在所述遮光结构边缘上，且位于所述金属图形层上方；
    其中，所述栅极遮光结构的所述退缩部是叠设在所述滤光色阻的所述色阻边缘上，且所述栅极遮光结构的所述退缩部与所述滤光色阻的所述色阻边缘的重迭宽度是小于所述栅极遮光结构的所述遮光结构边缘与所述滤光色阻的所述色阻边缘的重迭宽度；
    其中，所述栅极遮光结构包括黑色间隔物及/或黑色矩阵。
  12. 根据权利要求11所述的液晶显示面板，其中所述滤光色阻的所述色阻边缘包括一第一渐缩部，所述栅极遮光结构的所述退缩部包括一第二渐缩部，所述第二渐缩部叠设在所述滤光色阻的第一渐缩部上。
  13. 一种液晶显示面板，包括：
    基板，所述基板上设置有多条数据线以及多条栅极线，所述数据线与所述栅极线交叉形成多个像素单元，每一像素单元具有金属图形层、滤光色阻、以及栅极遮光结构；
    所述金属图形层设置在所述基板上；
    所述滤光色阻覆盖设置在所述金属图形层上；以及
    所述栅极遮光结构，设置在所述栅极线上方，用于遮挡相邻两所述像素单元之间间隙，所述栅极遮光结构的边缘位于所述滤光色阻内，在所述栅极遮光结构上朝远离所述滤光色阻的方向内缩形成一退缩部；
    其中，各所述滤光色阻具有一色阻边缘，所述色阻边缘叠设在所述金属图形层的一部份上；以及所述栅极遮光结构具有一叠设在所述色阻边缘上的遮光结构边缘，所述退缩部形成在所述遮光结构边缘上，且位于所述金属图形层上方；
    其中，所述栅极遮光结构的所述退缩部与所述滤光色阻的所述色阻边缘相互切齐不相互叠设，或是所述栅极遮光结构的所述退缩部与所述滤光色阻的所述色阻边缘相隔一间距而不相互叠设；
    其中，所述栅极遮光结构包括黑色间隔物及/或黑色矩阵。
  14. 根据权利要求13所述的液晶显示面板，其中所述金属图形层包括有一第一金属层以及一叠设在所述第一金属层上的第二金属层，其中所述第一金属层与所述第二金属层用于形成一电子元件。
  15. 根据权利要求14所述的液晶显示面板，其中所述金属图形层的所述第二金属层面积大于所述第一金属层，且所述栅极遮光结构的所述退缩部是位于所述第二金属层上方而不超出所述第二金属层的边缘。
  16. 根据权利要求14所述的液晶显示面板，其中所述电子元件为一储存电容。
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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108957892B (zh) * 2018-08-31 2020-12-04 武汉华星光电技术有限公司 液晶显示面板
CN110082975A (zh) * 2019-04-12 2019-08-02 深圳市华星光电半导体显示技术有限公司 阵列基板以及显示面板
CN115458600B (zh) * 2022-06-10 2025-07-29 南京江智科技有限公司 具有改进的沟槽终端区和屏蔽栅沟槽接触区的功率器件

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09113721A (ja) * 1995-08-11 1997-05-02 Toray Ind Inc 液晶表示素子用カラーフィルタ及びその製造方法
CN101493649A (zh) * 2008-01-25 2009-07-29 富士胶片株式会社 滤色器及其制造方法以及液晶显示装置
CN101592752A (zh) * 2008-05-30 2009-12-02 富士胶片株式会社 滤色片及其制造方法以及液晶显示装置
CN101923235A (zh) * 2009-06-16 2010-12-22 友达光电股份有限公司 显示面板及其制造方法
CN104090434A (zh) * 2014-06-25 2014-10-08 京东方科技集团股份有限公司 阵列基板及显示装置
CN108957892A (zh) * 2018-08-31 2018-12-07 武汉华星光电技术有限公司 液晶显示面板

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11311786A (ja) * 1998-02-27 1999-11-09 Sharp Corp 液晶表示装置およびその製造方法
JP2000111724A (ja) * 1998-10-02 2000-04-21 Sharp Corp カラーフィルター、カラーフィルターの製造方法、および、それを用いた液晶表示装置
JP2003050387A (ja) * 2001-05-29 2003-02-21 Matsushita Electric Ind Co Ltd 液晶パネル及び液晶パネルの製造方法
KR100978950B1 (ko) 2003-12-01 2010-08-31 엘지디스플레이 주식회사 액정표시장치
JP2009086617A (ja) * 2007-09-10 2009-04-23 Fujifilm Corp カラーフィルタ及びその製造方法、ならびに液晶表示装置
KR20100019666A (ko) 2008-08-11 2010-02-19 삼성전자주식회사 박막 트랜지스터 표시판, 이를 포함하는 액정 표시 장치, 그리고 액정 표시 장치의 제조 방법
CN101825814B (zh) * 2009-03-04 2012-05-30 北京京东方光电科技有限公司 Tft-lcd阵列基板及其制造方法
CN103064218A (zh) * 2012-12-28 2013-04-24 南京中电熊猫液晶显示科技有限公司 一种液晶显示装置
CN104483790B (zh) * 2014-12-19 2017-06-27 友达光电股份有限公司 主动元件阵列基板与显示面板
CN104808411A (zh) * 2015-05-19 2015-07-29 友达光电股份有限公司 一种薄膜晶体管液晶显示器
CN106773393B (zh) * 2016-12-14 2020-01-03 深圳市华星光电技术有限公司 阵列基板、显示面板、显示装置及阵列基板的制备方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09113721A (ja) * 1995-08-11 1997-05-02 Toray Ind Inc 液晶表示素子用カラーフィルタ及びその製造方法
CN101493649A (zh) * 2008-01-25 2009-07-29 富士胶片株式会社 滤色器及其制造方法以及液晶显示装置
CN101592752A (zh) * 2008-05-30 2009-12-02 富士胶片株式会社 滤色片及其制造方法以及液晶显示装置
CN101923235A (zh) * 2009-06-16 2010-12-22 友达光电股份有限公司 显示面板及其制造方法
CN104090434A (zh) * 2014-06-25 2014-10-08 京东方科技集团股份有限公司 阵列基板及显示装置
CN108957892A (zh) * 2018-08-31 2018-12-07 武汉华星光电技术有限公司 液晶显示面板

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