WO2020042280A1 - 一种背光模组及其制备方法 - Google Patents

一种背光模组及其制备方法 Download PDF

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Publication number
WO2020042280A1
WO2020042280A1 PCT/CN2018/109426 CN2018109426W WO2020042280A1 WO 2020042280 A1 WO2020042280 A1 WO 2020042280A1 CN 2018109426 W CN2018109426 W CN 2018109426W WO 2020042280 A1 WO2020042280 A1 WO 2020042280A1
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WO
WIPO (PCT)
Prior art keywords
pad
white oil
area
oil layer
overlapping area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2018/109426
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English (en)
French (fr)
Inventor
杨勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Technology Co Ltd
Priority to US16/308,350 priority Critical patent/US11156351B2/en
Publication of WO2020042280A1 publication Critical patent/WO2020042280A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V33/00—Structural combinations of lighting devices with other articles, not otherwise provided for
    • F21V33/0004—Personal or domestic articles
    • F21V33/0052—Audio or video equipment, e.g. televisions, telephones, cameras or computers; Remote control devices therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/90—Methods of manufacture
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S4/00—Lighting devices or systems using a string or strip of light sources
    • F21S4/20—Lighting devices or systems using a string or strip of light sources with light sources held by or within elongate supports
    • F21S4/22—Lighting devices or systems using a string or strip of light sources with light sources held by or within elongate supports flexible or deformable, e.g. into a curved shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133606—Direct backlight including a specially adapted diffusing, scattering or light controlling members

Definitions

  • the invention relates to the technical field of liquid crystal display, in particular to a backlight module and a method for manufacturing the same.
  • Sub-millimeter light-emitting diodes have become hotspots in the market development. They have many advantages such as light weight, power saving, flexibility, high brightness, full-screen display devices with narrow bezels, and high dynamic contrast (HDR) display devices. Toward the focus of market attention. However, due to the limitation of the reflectance of the white oil on the board and the limitation of the area of the window area of the white oil on the board, the current surface light source has low light emitting efficiency and low brightness. Due to the existence of some heat resistance problems of other film layers, their application in surface light sources has been limited, and there is no better way to solve this problem.
  • the invention provides a backlight module and a preparation method thereof, which can increase the area ratio of the white oil layer on the flexible substrate, ensure the size and tolerance of the window of the white oil layer, and thereby improve the light efficiency of the surface light source.
  • the present invention provides a backlight module including a surface light source and a flexible circuit substrate.
  • the flexible circuit substrate includes:
  • a first pad prepared on the flexible substrate
  • a second pad is disposed on the flexible substrate at a distance from the first pad
  • a white oil layer prepared on the flexible substrate and the first pad and the second pad, and the white oil layer is patterned to form a window area;
  • An LED chip is disposed on the white oil layer, and the two ends are electrically connected to the first pad and the second pad respectively through the window opening area;
  • the LED chip forms a first overlapping area with the first pad, forms a second overlapping area with the second pad, and a non-overlapping area between the first overlapping area and the second overlapping area. Area;
  • the window opening area overlaps at least the first overlapping area and the second overlapping area.
  • the flexible circuit substrate further includes: a back copper trace prepared on one surface of the flexible substrate; a front copper trace prepared on the other surface of the flexible substrate; The front copper trace is connected to the LED chip.
  • the white oil layer is formed on the front copper trace, and a portion of the LED chip corresponding to the non-overlapping area is insulated from the front copper trace through the white oil layer.
  • the thickness of the white oil layer corresponding to the non-overlapping area is smaller than the thickness of the white oil layer corresponding to the remaining areas.
  • the first pad includes a positive electrode
  • the second pad includes a negative electrode
  • the LED chip is connected to the positive electrode through the first overlap region, and through the second overlap, respectively.
  • the region is connected to the negative electrode.
  • the window opening area extends from the boundary of the non-overlapping area to both sides or the periphery to form the window opening area exposing at least the first overlapping area and the second overlapping area, Areas of the first pads on both sides of the non-overlapping area and the corresponding window opening areas on the second pad are equal.
  • the invention also provides a method for manufacturing a backlight module.
  • the backlight module includes a surface light source and a flexible circuit substrate.
  • the method for preparing the flexible circuit substrate includes the following steps:
  • Step S10 providing a flexible substrate with a front copper trace and a back copper trace prepared on the surface.
  • the flexible substrate includes a first pad and a second pad that are spaced apart from each other.
  • the second pad includes a negative electrode, and an intermediate region between the positive electrode and the negative electrode is positioned;
  • step S20 a white oil layer is prepared on the flexible substrate, and the white oil layer in the intermediate region is thinned so that the white oil layer in the intermediate region and the white oil layer in the remaining regions form a height difference. ;
  • step S30 the white oil layer is etched to form an open window area exposing at least the positive electrode and the negative electrode outside the intermediate region, and then the white oil layer is cured;
  • step S40 the LED chip is electrically connected to the positive electrode and the negative electrode respectively through the window opening area.
  • thinning the white oil layer in the middle region includes the following steps:
  • a corresponding embossing mold is used to emboss the white oil layer at the position of the middle area, or etch in an etching manner.
  • etching the white oil layer includes the following steps:
  • the areas of the first pads on both sides of the middle region and the corresponding window opening areas on the second pads are equal.
  • the invention also provides a backlight module, which includes a surface light source and a flexible circuit substrate.
  • the flexible circuit substrate includes:
  • a first pad prepared on the flexible substrate
  • a second pad is disposed on the flexible substrate at a distance from the first pad
  • a white oil layer prepared on the flexible substrate and the first pad and the second pad, and the white oil layer is patterned to form a window area;
  • An LED chip is disposed on the white oil layer, and the two ends are electrically connected to the first pad and the second pad respectively through the window opening area;
  • the LED chip forms a first overlapping area with the first pad, forms a second overlapping area with the second pad, and a non-overlapping area between the first overlapping area and the second overlapping area. Area, the first overlapping area and the second overlapping area have the same area;
  • the window opening area overlaps at least the first overlapping area and the second overlapping area.
  • the flexible circuit substrate further includes: a back copper trace prepared on one surface of the flexible substrate; a front copper trace prepared on the other surface of the flexible substrate; The front copper trace is connected to the LED chip.
  • the white oil layer is formed on the front copper trace, and a portion of the LED chip corresponding to the non-overlapping area is insulated from the front copper trace through the white oil layer.
  • the thickness of the white oil layer corresponding to the non-overlapping area is smaller than the thickness of the white oil layer corresponding to the remaining areas.
  • the first pad includes a positive electrode
  • the second pad includes a negative electrode
  • the LED chip is connected to the positive electrode through the first overlap region, and through the second overlap, respectively.
  • the region is connected to the negative electrode.
  • the window opening area extends from the boundary of the non-overlapping area to both sides or the periphery to form the window opening area exposing at least the first overlapping area and the second overlapping area, Areas of the first pads on both sides of the non-overlapping area and the corresponding window opening areas on the second pad are equal.
  • the beneficial effect of the present invention is that, compared with the existing backlight module, the backlight module provided by the present invention and the method for manufacturing the same use the positive electrode and the second electrode of the first pad of the flexible circuit substrate with a white oil layer prepared.
  • the middle area between the negative electrodes of the disk is positioned to prepare a windowing area structure with positioning function.
  • the invention can reduce the window area of the white oil layer and increase the area of the white oil layer on the substrate. Ratio, to ensure that the pads on the two sides of the window area of the white oil layer are the same size.
  • the overall surface reflectance of the substrate is improved to improve the overall light efficiency of the surface light source. Tolerances ensure that the LED chip arrangement does not tilt in the subsequent die bonding and reflow soldering processes, and improves the overall uniformity of the surface light source.
  • FIG. 1 is a schematic cross-sectional view of a flexible circuit substrate of a backlight module according to an embodiment of the present invention
  • FIGS. 2A to 2C are schematic structural diagrams of window opening of a white oil layer in a flexible circuit substrate according to an embodiment of the present invention
  • FIG. 3 is a comparison diagram of reflectance in the case where there is white oil and no white oil in the middle region of the pad poles according to an embodiment of the present invention
  • FIG. 4 is a flowchart of a method for manufacturing a flexible circuit substrate according to an embodiment of the present invention.
  • the present invention is directed to the backlight module of the prior art. Due to the limitation of the reflectance of the white oil on the substrate and the limitation of the area of the window area of the white oil on the substrate, the current surface light source has low technical efficiency and low brightness. This embodiment can solve this defect.
  • FIG. 1 it is a schematic cross-sectional view of a flexible circuit substrate of a backlight module according to an embodiment of the present invention.
  • the backlight module includes a surface light source and the flexible circuit substrate, wherein the flexible circuit substrate includes: a flexible substrate 11 which may be a polyimide (PI) material; the flexible substrate The bottom 11 is provided with a pad (not shown) for connecting the LED chip; the back copper trace 10 is prepared on one side surface of the flexible substrate 11; the front copper trace 12 is prepared on the flexible liner The other side of the bottom 11; the front copper trace 12 is connected to the LED chip, and its main function is to define the circuit connection mode of the LED chip in the backlight module and ensure the normal operation of the LED chip A white oil layer 13 prepared on the flexible substrate 11 and formed on the front copper traces 12; the white oil layer 13 is a solder resist layer above the flexible substrate 11 and its main function is to avoid The LED chip causes a short circuit during the process of soldering to the pad; since the reflectivity of metallic copper is lower than that of
  • FIGS. 2A to 2C are schematic diagrams of a window structure of a white oil layer in a flexible circuit substrate provided by an embodiment of the present invention.
  • the flexible substrate includes a first pad 20 and a second pad 21, and the first pad 20 and the second pad 21 are spaced apart, and a gap is formed between the two;
  • the white oil layer is formed on the flexible substrate, the first pad 20 and the second pad 21, and the white oil layer is etched to form a window area 22.
  • the first pad 20 includes a positive electrode
  • the second pad 21 includes a negative electrode
  • the window opening region 22 exposes at least the positive electrode of the first pad 20 and the second pad 21.
  • the negative electrode is provided with the LED chip 23 on the white oil layer, and the pins at both ends of the LED chip 23 are respectively connected to the positive electrode and the second solder of the first pad 20 through the window opening area 22.
  • the negative electrode of the disk 21 is electrically connected.
  • the LED chip 23 forms a first overlap region 201 with the first pad 20, forms a second overlap region 211 with the second pad 21, and is located in the first overlap region 201 and the second overlap A non-overlapping area between the areas 211; wherein the window area 22 overlaps the first overlapping area 201 and the second overlapping area 211.
  • the white oil layer corresponding to the non-overlapping area is retained, and the LED chip 23 is connected to the positive electrode of the first pad 20 through the first overlapping area 201 and through the first
  • the two overlapping regions 211 are connected to the negative electrode of the second pad 21.
  • a portion of the LED chip 23 corresponding to the non-overlapping region is insulated from the front copper trace through the white oil layer.
  • the area of the window opening region 22 of the white oil layer is the smallest. Since the reflectance of the white oil is higher than that of metallic copper, the reflectivity of the flexible circuit substrate is increased, thereby improving the overall light efficiency of the surface light source.
  • the areas of the first overlapping region 201 and the second overlapping region 211 are equal.
  • the thickness of the white oil layer corresponding to the non-overlapping region is smaller than the thickness of the white oil layer corresponding to the remaining regions.
  • the window opening region 22 may also extend from the boundary of the non-overlapping region to both sides to a boundary that does not exceed the pad, so as to expose the first overlapping region 201 and the second overlapping region 211. Mentioned open window area 22. It can be understood that the positive electrode and the negative electrode herein overlap the first overlapping region 201 and the second overlapping region 211, respectively, or are overlapped by the first overlapping region 201 and the second overlapping region 211, respectively. It is completely covered and is not limited here. Of course, the boundary of the window opening area 22 may also extend beyond the boundary of the pad, but this means that the area of the window opening area 22 is increased, which is not conducive to the improvement of the light efficiency of the surface light source.
  • the window opening area 22 extends from the boundary of the non-overlapping area to the periphery, and an edge of the window opening area 22 is located on the pad correspondingly, so as to expose at least the first overlapping area 201 and
  • the window opening area 22 of the second overlapping area 211 is such that an area of the window opening area 22 corresponding to the first pad 20 on both sides of the non-overlapping area and the second pad 21 equal.
  • an area of the pad exposed in the window opening area 22 is about 20% larger than an area of the LED chip 23.
  • an intermediate region 24 between the positive electrode of the first pad 20 and the negative electrode of the second pad 21 is positioned on the flexible circuit substrate (that is, the Non-overlapping area).
  • a layer of the white oil layer is prepared on the flexible circuit substrate, and the intermediate region 24 is also covered by the white oil layer.
  • the thickness of the white oil layer is 25 ⁇ m ⁇ 3 ⁇ m.
  • the white oil layer above the positioned middle area 24 may be embossed with a corresponding embossing mold, or etched by etching, Reducing the thickness of the original white oil layer in the positioned intermediate region 24 to less than 10 ⁇ m, so that a height difference is formed between the white oil layer and the surrounding white oil layer there, on the one hand, this height difference exists It can improve the virtual soldering of the LED chip 23 in the solid crystal operation, and on the other hand, it can also allow the CCD (photosensitive element) to accurately grasp and position, thereby ensuring the accuracy of the subsequent windowing process on the white oil layer.
  • CCD photosensitive element
  • the center of the portion of the white oil layer corresponding to the intermediate region 24 is captured with a CCD, and the white oil layer is window-etched from the boundary of the intermediate region 24 to the periphery based on the center.
  • the height of the solder paste on the pads is the same, thereby ensuring the die bonding
  • the LED chip 23 will not tilt during operation, and the LED chip 23 will not be pulled and tilted due to the difference in the amount of positive and negative solder paste during the reflow process, thereby ensuring the uniformity of the brightness of the entire surface of the surface light source. .
  • the present invention is beneficial to improving the reflectivity of the flexible circuit substrate, thereby improving the overall light efficiency of the surface light source.
  • the invention also provides a method for manufacturing a backlight module.
  • the backlight module includes a surface light source and a flexible circuit substrate.
  • the method for preparing the flexible circuit substrate includes the following steps:
  • Step S10 providing a flexible substrate with a front copper trace and a back copper trace prepared on the surface.
  • the flexible substrate includes a first pad and a second pad that are spaced apart, and the first pad includes a positive electrode.
  • the second pad includes a negative electrode, and an intermediate region between the positive electrode and the negative electrode is positioned;
  • step S20 a white oil layer is prepared on the flexible substrate, and the white oil layer in the intermediate region is thinned so that the white oil layer in the intermediate region and the white oil layer in the remaining regions form a height difference. ;
  • thinning the white oil layer in the intermediate region includes the following steps:
  • a corresponding embossing mold is used to emboss the white oil layer at the position of the middle area, or etch in an etching manner.
  • step S30 the white oil layer is etched to form an open window area exposing at least the positive electrode and the negative electrode outside the intermediate region, and then the white oil layer is cured;
  • etching the white oil layer includes the following steps:
  • a CCD is used to capture the center of the corresponding portion of the white oil layer corresponding to the intermediate region, and the center is used as a reference to etch from the boundary of the intermediate region to the periphery to form a ring shape that exposes at least the positive electrode and the negative electrode.
  • the window opening area
  • the boundary of the window opening area is located at a position corresponding to the pad, and the window opening area is minimized as much as possible without affecting the LED chip welding.
  • the areas of the first pads on both sides of the middle region and the corresponding window opening areas on the second pads are equal. For details, refer to the description of the foregoing embodiment.
  • step S40 the LED chip is electrically connected to the positive electrode and the negative electrode respectively through the window opening area.
  • soldering of the LED chip is made by a conventional method, which is not limited here.
  • the backlight module provided by the present invention and a preparation method thereof are prepared by positioning in an intermediate area between a positive electrode of a first pad and a negative electrode of a second pad of a flexible circuit substrate prepared with a white oil layer, thereby preparing an opening having a positioning function.
  • Window area structure Compared with the traditional window area structure, the present invention can reduce the window area of the white oil layer, increase the area ratio of the white oil layer on the substrate, and ensure that the pads on both sides of the window area of the white oil layer have the same size.
  • the reflectivity of the entire surface of the substrate is improved to improve the overall light efficiency of the surface light source.
  • the window area and tolerance of the pads on both sides of the white oil layer in the middle area are controlled to ensure that the LED chips are not tilted in the subsequent solid-state and reflow soldering process. Improve the overall uniformity of the surface light source.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Multimedia (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Fastening Of Light Sources Or Lamp Holders (AREA)
  • Planar Illumination Modules (AREA)
  • Led Device Packages (AREA)

Abstract

一种背光模组及其制备方法。背光模组包括柔性电路基板。柔性电路基板包括柔性衬底（11），白油层（13），以及LED芯片（23）。柔性衬底（11）上设有第一焊盘（20）与第二焊盘（21）。白油层（13）设于柔性衬底（11）上且图案化后形成开窗区（22）。LED芯片（23）两端通过开窗区（22）分别与第一焊盘（20）的正极及第二焊盘（21）的负极电连接。开窗区（22）至少露出正极与负极。

Description

一种背光模组及其制备方法 技术领域
本发明涉及液晶显示技术领域，尤其涉及一种背光模组及其制备方法。
 背景技术
次毫米发光二极管（面光源）目前成为市场开发的热点，其具有轻薄、省电、柔性可弯曲、亮度高、可制作窄边框全面屏显示器件及高动态对比度（HDR）显示器件等诸多优势，成为市场关注的重点。然而，由于板材上白油反射率的限制，以及白油在板材上开窗区域面积的限制，造成目前面光源出光效率较低，亮度较低。由于其他膜层一些耐热性问题的存在，使其在面光源上的应用收到限制，对此，人们尚没有较好的方式加以解决。
因此，现有技术存在缺陷，急需改进。
 技术问题
本发明提供一种背光模组及其制备方法，能够增大白油层在柔性衬底上的面积占比，保证白油层开窗的尺寸和公差，从而提升面光源的光效。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明提供一种背光模组，包括面光源与柔性电路基板，所述柔性电路基板包括：
柔性衬底；
第一焊盘，制备于所述柔性衬底上；
第二焊盘，与所述第一焊盘间隔的设置于所述柔性衬底上；
白油层，制备于所述柔性衬底以及所述第一焊盘与所述第二焊盘上，所述白油层经图案化后形成开窗区；
LED芯片，设置于所述白油层上，且两端通过所述开窗区分别与所述第一焊盘以及所述第二焊盘电性连接；
所述LED芯片与所述第一焊盘形成第一重叠区，与所述第二焊盘形成第二重叠区，以及位于所述第一重叠区与所述第二重叠区之间的非重叠区；
其中，所述开窗区至少与所述第一重叠区以及所述第二重叠区重叠。
根据本发明一实施例，所述柔性电路基板还包括：背面铜走线，制备于所述柔性衬底的一侧表面；正面铜走线，制备于所述柔性衬底的另一侧表面；所述正面铜走线与所述LED芯片连接。
根据本发明一实施例，所述白油层形成于所述正面铜走线上，所述LED芯片对应所述非重叠区的部分通过所述白油层与所述正面铜走线绝缘设置。
根据本发明一实施例，对应所述非重叠区的所述白油层的厚度小于其余区域对应的所述白油层的厚度。
根据本发明一实施例，所述第一焊盘包括正极，所述第二焊盘包括负极，所述LED芯片分别通过所述第一重叠区与所述正极连接，以及通过所述第二重叠区与所述负极连接。
根据本发明一实施例，所述开窗区由所述非重叠区的边界向两侧或周边延伸，形成至少露出所述第一重叠区以及所述第二重叠区的所述开窗区，所述非重叠区两侧的所述第一焊盘与所述第二焊盘上对应的所述开窗区的面积相等。
本发明还提供一种背光模组的制备方法，所述背光模组包括面光源与柔性电路基板，所述柔性电路基板的制备方法包括以下步骤：
步骤S10，提供表面制备有正面铜走线与背面铜走线的柔性衬底，所述柔性衬底包括间隔设置的第一焊盘与第二焊盘，所述第一焊盘包括正极，所述第二焊盘包括负极，定位出所述正极与所述负极之间的中间区域；
步骤S20，在所述柔性衬底上制备白油层，对所述中间区域的所述白油层进行减薄处理，使得所述中间区域的所述白油层与其余区域的所述白油层形成高度差；
步骤S30，对所述白油层进行蚀刻，在所述中间区域之外形成至少露出所述正极与所述负极的开窗区，之后对所述白油层进行固化；
步骤S40，将LED芯片通过所述开窗区分别与所述正极以及所述负极电性连接。
根据本发明一实施例，在所述步骤S20中，对所述中间区域的所述白油层进行减薄处理包括以下步骤：
采用相应的压印模具对所述中间区域位置的所述白油层进行压印，或采用蚀刻的方式进行蚀刻。
根据本发明一实施例，在所述步骤S30中，对所述白油层进行蚀刻包括以下步骤：
抓取所述中间区域的中心，以所述中间区域的中心为基准，从所述中间区域的边界向两侧或周边进行蚀刻，形成至少露出所述正极与所述负极的所述开窗区；
其中，所述中间区域两侧的所述第一焊盘与所述第二焊盘上对应的所述开窗区的面积相等。
本发明还提供一种背光模组，包括面光源与柔性电路基板，所述柔性电路基板包括：
柔性衬底；
第一焊盘，制备于所述柔性衬底上；
第二焊盘，与所述第一焊盘间隔的设置于所述柔性衬底上；
白油层，制备于所述柔性衬底以及所述第一焊盘与所述第二焊盘上，所述白油层经图案化后形成开窗区；
LED芯片，设置于所述白油层上，且两端通过所述开窗区分别与所述第一焊盘以及所述第二焊盘电性连接；
所述LED芯片与所述第一焊盘形成第一重叠区，与所述第二焊盘形成第二重叠区，以及位于所述第一重叠区与所述第二重叠区之间的非重叠区，所述第一重叠区与所述第二重叠区的面积相等；
其中，所述开窗区至少与所述第一重叠区以及所述第二重叠区重叠。
根据本发明一实施例，所述柔性电路基板还包括：背面铜走线，制备于所述柔性衬底的一侧表面；正面铜走线，制备于所述柔性衬底的另一侧表面；所述正面铜走线与所述LED芯片连接。
根据本发明一实施例，所述白油层形成于所述正面铜走线上，所述LED芯片对应所述非重叠区的部分通过所述白油层与所述正面铜走线绝缘设置。
根据本发明一实施例，对应所述非重叠区的所述白油层的厚度小于其余区域对应的所述白油层的厚度。
根据本发明一实施例，所述第一焊盘包括正极，所述第二焊盘包括负极，所述LED芯片分别通过所述第一重叠区与所述正极连接，以及通过所述第二重叠区与所述负极连接。
根据本发明一实施例，所述开窗区由所述非重叠区的边界向两侧或周边延伸，形成至少露出所述第一重叠区以及所述第二重叠区的所述开窗区，所述非重叠区两侧的所述第一焊盘与所述第二焊盘上对应的所述开窗区的面积相等。
 有益效果
本发明的有益效果为：相较于现有的背光模组，本发明提供的背光模组及其制备方法，通过在制备有白油层的柔性电路基板的第一焊盘的正极与第二焊盘的负极之间的中间区域进行定位，制备具有定位作用的开窗区结构，本发明与传统开窗区结构相比，可以减少白油层的开窗面积，增大白油层在基板上的面积占比，保证白油层的开窗区两侧焊盘大小相同，一方面提升基板整面反射率从而提升面光源整体光效，另一方面对中间区域的白油层两侧焊盘管控开窗面积和公差，保证后续固晶和回流焊工艺中LED芯片排列不致倾斜，提升面光源整体均匀性。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的背光模组的柔性电路基板剖面示意图；
图2A~2C为本发明实施例提供的柔性电路基板中白油层的开窗结构示意图；
图3为本发明实施例提供的焊盘两极中间区域有白油和无白油情况下反射率的对比图；
图4为本发明实施例提供的柔性电路基板的制备方法流程图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
本发明针对现有技术的背光模组，由于基板上白油反射率的限制，以及白油在基板上开窗区面积的限制，造成目前面光源出光效率较低，亮度较低的技术问题，本实施例能够解决该缺陷。
如图1所示，为本发明实施例提供的背光模组的柔性电路基板剖面示意图。所述背光模组包括面光源与所述柔性电路基板，其中，所述柔性电路基板包括：柔性衬底11，所述柔性衬底11可为聚酰亚胺（PI）材料；所述柔性衬底11上设置有用于连接LED芯片的焊盘（图示未标示）；背面铜走线10，制备于所述柔性衬底11的一侧表面；正面铜走线12，制备于所述柔性衬底11的另一侧表面；所述正面铜走线12与所述LED芯片连接，主要作用是定义所述背光模组中所述LED芯片的电路连接方式，并保证所述LED芯片的正常工作；白油层13，制备于所述柔性衬底11上，且形成于所述正面铜走线12上；所述白油层13为所述柔性衬底11上方的阻焊层，其主要作用是避免所述LED芯片在焊接至所述焊盘的过程中造成短路；由于金属铜的反射率低于白油，因此所述白油层13还用于增加所述柔性电路基板表面的反射率，提升所述面光源光效。所述LED芯片为倒装芯片，所述LED芯片大小在100μm-500μm，又称为次毫米发光二极管。
参照图2A~2C，为本发明实施例提供的柔性电路基板中白油层的开窗结构示意图。如图2A所示，所述柔性衬底上包括第一焊盘20与第二焊盘21，所述第一焊盘20与所述第二焊盘21间隔设置，两者之间形成间隙；所述白油层形成于所述柔性衬底以及所述第一焊盘20与所述第二焊盘21上，所述白油层经蚀刻后形成开窗区22。所述第一焊盘20包括正极，所述第二焊盘21包括负极，所述开窗区22至少露出所述第一焊盘20的所述正极以及所述第二焊盘21的所述负极，将LED芯片23设置于所述白油层上，且所述LED芯片23两端的引脚通过所述开窗区22分别与所述第一焊盘20的所述正极以及所述第二焊盘21的所述负极电性连接。
所述LED芯片23与所述第一焊盘20形成第一重叠区201，与所述第二焊盘21形成第二重叠区211，以及位于所述第一重叠区201与所述第二重叠区211之间的非重叠区；其中，所述开窗区22与所述第一重叠区201以及所述第二重叠区211重叠。
也就是说，保留所述非重叠区对应的所述白油层，所述LED芯片23分别通过所述第一重叠区201与所述第一焊盘20的所述正极连接，以及通过所述第二重叠区211与所述第二焊盘21的所述负极连接。所述LED芯片23对应所述非重叠区的部分通过所述白油层与所述正面铜走线绝缘设置。
此时，所述白油层的所述开窗区22的面积最小，由于白油反射率高于金属铜，使得所述柔性电路基板的反射率提高，从而提升所述面光源的整体光效。
优选的，所述第一重叠区201与所述第二重叠区211的面积相等。
优选的，对应所述非重叠区的所述白油层的厚度小于其余区域对应的所述白油层的厚度。以避免所述LED芯片23的引脚不能完全接触到所述焊盘，而导致在所述LED芯片23焊接的过程中发生虚焊。
另外，所述开窗区22也可由所述非重叠区的边界向两侧延伸至不超过所述焊盘的边界，形成露出所述第一重叠区201以及所述第二重叠区211的所述开窗区22。可以理解的是，这里的所述正极与所述负极分别与所述第一重叠区201以及所述第二重叠区211重叠，或者被所述第一重叠区201以及所述第二重叠区211所完全覆盖，此处不做限制。当然，所述开窗区22的边界也可延伸至所述焊盘边界外，但这意味着所述开窗区22的面积增大，不利于所述面光源光效的提升。
优选的，所述开窗区22由所述非重叠区的边界向周边延伸，且所述开窗区22的边缘对应位于所述焊盘之上，形成至少露出所述第一重叠区201以及所述第二重叠区211的所述开窗区22，使得所述非重叠区两侧的所述第一焊盘20与所述第二焊盘21上对应的所述开窗区22的面积相等。
优选的，所述开窗区22露出的所述焊盘的面积比所述LED芯片23的面积大20%左右。
如图2B~2C所示，在所述柔性电路基板上定位出所述第一焊盘20的所述正极与所述第二焊盘21的所述负极之间的中间区域24（即所述非重叠区）。在所述柔性电路基板上制备一层所述白油层，所述中间区域24也被所述白油层覆盖，优选的，所述白油层的厚度为25μm±3μm。并对所述中间区域24的所述白油层进行减薄处理，可采用相应的压印模具对定位的所述中间区域24上方的所述白油层进行压印，或采用蚀刻的方式进行蚀刻，将定位的所述中间区域24原有的所述白油层的厚度减薄到10μm以下，使得该处的所述白油层与周围所述白油层之间形成高度差，此高度差的存在一方面可以改善所述LED芯片23在固晶作业中的虚焊，另一方面也可以让CCD（感光元件）进行精准抓取定位，保证后续对所述白油层进行开窗工艺的精度。之后用CCD抓取所述白油层对应所述中间区域24的部分的中心，并以该中心为基准，对所述白油层从所述中间区域24的边界向周边进行开窗蚀刻。优选的，所述开窗区22的范围满足d1=d2，d3=d4，α1=α2，β1=β2。以保证所述中间区域24两侧露出的所述焊盘尺寸比例相同，在后续所述LED芯片23固晶刷涂锡膏工艺时保证所述焊盘上的锡膏高度相同，从而保证固晶作业中所述LED芯片23不会发生倾斜，回流焊工艺中所述LED芯片23也不会因为正负极锡膏量的不同导致拉扯倾斜，进而保证了所述面光源整面亮度的均匀性。
如图3所示，为焊盘两极中间有白油和无白油情况下反射率的对比图，图中可以看出焊盘两极中间区域有白油时比没有白油时反射率高10%，在焊盘两极中间区域增加白油可减小白油开窗面积，因此本发明有利于提升柔性电路基板的反射率，从而提升面光源的整体光效。
本发明还提供一种背光模组的制备方法，所述背光模组包括面光源与柔性电路基板，如图4所示，所述柔性电路基板的制备方法包括以下步骤：
步骤S10，提供表面制备有正面铜走线与背面铜走线的柔性衬底，所述柔性衬底包括间隔设置的第一焊盘与第二焊盘，所述第一焊盘包括正极，所述第二焊盘包括负极，定位出所述正极与所述负极之间的中间区域；
其中，所述中间区域的具体位置可参照上述实施例中的描述以及图2B所示，此处不再赘述。
步骤S20，在所述柔性衬底上制备白油层，对所述中间区域的所述白油层进行减薄处理，使得所述中间区域的所述白油层与其余区域的所述白油层形成高度差；
具体地，对所述中间区域的所述白油层进行减薄处理包括以下步骤：
采用相应的压印模具对所述中间区域位置的所述白油层进行压印，或采用蚀刻的方式进行蚀刻。
步骤S30，对所述白油层进行蚀刻，在所述中间区域之外形成至少露出所述正极与所述负极的开窗区，之后对所述白油层进行固化；
具体地，对所述白油层进行蚀刻包括以下步骤：
采用CCD抓取所述白油层对应所述中间区域的相应部分的中心，以该中心为基准，从所述中间区域的边界向周边进行蚀刻，形成至少露出所述正极与所述负极的环形的所述开窗区；
优选的，所述开窗区的边界位于所述焊盘相对应的位置，在不影响LED芯片焊接的基础上，尽量保持所述开窗区的最小化。
其中，所述中间区域两侧的所述第一焊盘与所述第二焊盘上对应的所述开窗区的面积相等，具体可参照上述实施例的描述。
步骤S40，将LED芯片通过所述开窗区分别与所述正极以及所述负极电性连接。
其中，所述LED芯片的焊接采用常规方法制作，此处不做限制。
本发明提供的背光模组及其制备方法，通过在制备有白油层的柔性电路基板的第一焊盘的正极与第二焊盘的负极之间的中间区域进行定位，制备具有定位作用的开窗区结构，本发明与传统开窗区结构相比，可以减少白油层的开窗面积，增大白油层在基板上的面积占比，保证白油层的开窗区两侧焊盘大小相同，一方面提升基板整面反射率从而提升面光源整体光效，另一方面对中间区域的白油层两侧焊盘管控开窗面积和公差，保证后续固晶和回流焊工艺中LED芯片排列不致倾斜，提升面光源整体均匀性。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (15)

  1. 一种背光模组，包括面光源与柔性电路基板，其中，所述柔性电路基板包括：
    柔性衬底；
    第一焊盘，制备于所述柔性衬底上；
    第二焊盘，与所述第一焊盘间隔的设置于所述柔性衬底上；
    白油层，制备于所述柔性衬底以及所述第一焊盘与所述第二焊盘上，所述白油层经图案化后形成开窗区；
    LED芯片，设置于所述白油层上，且两端通过所述开窗区分别与所述第一焊盘以及所述第二焊盘电性连接；
    所述LED芯片与所述第一焊盘形成第一重叠区，与所述第二焊盘形成第二重叠区，以及位于所述第一重叠区与所述第二重叠区之间的非重叠区；
    其中，所述开窗区至少与所述第一重叠区以及所述第二重叠区重叠。
  2. 根据权利要求1所述的背光模组，其中，所述柔性电路基板还包括：背面铜走线，制备于所述柔性衬底的一侧表面；正面铜走线，制备于所述柔性衬底的另一侧表面；所述正面铜走线与所述LED芯片连接。
  3. 根据权利要求2所述的背光模组，其中，所述白油层形成于所述正面铜走线上，所述LED芯片对应所述非重叠区的部分通过所述白油层与所述正面铜走线绝缘设置。
  4. 根据权利要求1所述的背光模组，其中，对应所述非重叠区的所述白油层的厚度小于其余区域对应的所述白油层的厚度。
  5. 根据权利要求1所述的背光模组，其中，所述第一焊盘包括正极，所述第二焊盘包括负极，所述LED芯片分别通过所述第一重叠区与所述正极连接，以及通过所述第二重叠区与所述负极连接。
  6. 根据权利要求1所述的背光模组，其中，所述开窗区由所述非重叠区的边界向两侧或周边延伸，形成至少露出所述第一重叠区以及所述第二重叠区的所述开窗区，所述非重叠区两侧的所述第一焊盘与所述第二焊盘上对应的所述开窗区的面积相等。
  7. 一种背光模组的制备方法，所述背光模组包括面光源与柔性电路基板，其中，所述柔性电路基板的制备方法包括以下步骤：
    步骤S10，提供表面制备有正面铜走线与背面铜走线的柔性衬底，所述柔性衬底包括间隔设置的第一焊盘与第二焊盘，所述第一焊盘包括正极，所述第二焊盘包括负极，定位出所述正极与所述负极之间的中间区域；
    步骤S20，在所述柔性衬底上制备白油层，对所述中间区域的所述白油层进行减薄处理，使得所述中间区域的所述白油层与其余区域的所述白油层形成高度差；
    步骤S30，对所述白油层进行蚀刻，在所述中间区域之外形成至少露出所述正极与所述负极的开窗区，之后对所述白油层进行固化；
    步骤S40，将LED芯片通过所述开窗区分别与所述正极以及所述负极电性连接。
  8. 根据权利要求7所述的制备方法，其中，在所述步骤S20中，对所述中间区域的所述白油层进行减薄处理包括以下步骤：
    采用相应的压印模具对所述中间区域位置的所述白油层进行压印，或采用蚀刻的方式进行蚀刻。
  9. 根据权利要求7所述的制备方法，其中，在所述步骤S30中，对所述白油层进行蚀刻包括以下步骤：
    抓取所述中间区域的中心，以所述中间区域的中心为基准，从所述中间区域的边界向两侧或周边进行蚀刻，形成至少露出所述正极与所述负极的所述开窗区；
    其中，所述中间区域两侧的所述第一焊盘与所述第二焊盘上对应的所述开窗区的面积相等。
  10. 一种背光模组，包括面光源与柔性电路基板，其中，所述柔性电路基板包括：
    柔性衬底；
    第一焊盘，制备于所述柔性衬底上；
    第二焊盘，与所述第一焊盘间隔的设置于所述柔性衬底上；
    白油层，制备于所述柔性衬底以及所述第一焊盘与所述第二焊盘上，所述白油层经图案化后形成开窗区；
    LED芯片，设置于所述白油层上，且两端通过所述开窗区分别与所述第一焊盘以及所述第二焊盘电性连接；
    所述LED芯片与所述第一焊盘形成第一重叠区，与所述第二焊盘形成第二重叠区，以及位于所述第一重叠区与所述第二重叠区之间的非重叠区，所述第一重叠区与所述第二重叠区的面积相等；
    其中，所述开窗区至少与所述第一重叠区以及所述第二重叠区重叠。
  11. 根据权利要求10所述的背光模组，其中，所述柔性电路基板还包括：背面铜走线，制备于所述柔性衬底的一侧表面；正面铜走线，制备于所述柔性衬底的另一侧表面；所述正面铜走线与所述LED芯片连接。
  12. 根据权利要求11所述的背光模组，其中，所述白油层形成于所述正面铜走线上，所述LED芯片对应所述非重叠区的部分通过所述白油层与所述正面铜走线绝缘设置。
  13. 根据权利要求10所述的背光模组，其中，对应所述非重叠区的所述白油层的厚度小于其余区域对应的所述白油层的厚度。
  14. 根据权利要求10所述的背光模组，其中，所述第一焊盘包括正极，所述第二焊盘包括负极，所述LED芯片分别通过所述第一重叠区与所述正极连接，以及通过所述第二重叠区与所述负极连接。
  15. 根据权利要求10所述的背光模组，其中，所述开窗区由所述非重叠区的边界向两侧或周边延伸，形成至少露出所述第一重叠区以及所述第二重叠区的所述开窗区，所述非重叠区两侧的所述第一焊盘与所述第二焊盘上对应的所述开窗区的面积相等。
PCT/CN2018/109426 2018-08-28 2018-10-09 一种背光模组及其制备方法 Ceased WO2020042280A1 (zh)

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