WO2020040381A1 - Multi-layered resistive-thermocouple type temperature measuring wafer sensor and method for manufacturing same - Google Patents

Abstract

A wafer sensor according to the present invention is configured to comprise, as a resistive temperature sensor, a plurality of reference resistors for measuring a reference temperature, and, as a thermocouple type temperature sensor, one or more thermoelectric parts connected in series from one end of the reference resistor, wherein the thermoelectric part and a connection wire are displaced in different layers. In particular, the thermoelectric part is configured in a shape in which two types of wires for forming a thermocouple are alternately repeated approximately 100 to 1,000 times. The respective thermoelectric parts are formed in a layer which is different from the layer in which the connection wire is formed so that the respective thermoelectric parts may be uniformly mounted on the entire surface area of the wafer sensor without any interference from the wire. More specifically, calibration corresponding to the reference temperature and a Seebeck coefficient of the thermoelectric unit is carried out by using the plurality of reference resistors so that reliability of the measured temperature may be improved and measuring may become more convenient since electromotive force measured through the respective thermoelectric parts is physically amplified. To this end, temperature uniformity regarding the entire surface area of a wafer can be more conveniently or accurately recognized.

Description

Multi-layer resistance-thermoelectric temperature measurement wafer sensor and manufacturing method thereof

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature measuring wafer sensor, and more particularly, to a multilayer resistance-thermoelectric temperature measuring wafer sensor capable of grasping temperature uniformity over the entire area of a wafer, and a manufacturing method thereof.

In a semiconductor manufacturing process, a wafer is heated by receiving heat from a susceptor while being placed on a susceptor. At this time, since heat loss occurs in the process of conducting heat from the susceptor to the wafer, a temperature difference occurs between the susceptor and the wafer.

For example, setting the temperature of the susceptor to 1000 ° C. may cause the actual temperature of the wafer to be less than this.

Therefore, it is necessary to accurately know the actual temperature of the wafer. It is very important to know the temperature uniformity over the whole wafer area because the temperature uniformity is the result of different process conditions for each part, resulting in less reliable process.

In this regard, various test wafers (dummy wafers) such as a wafer temperature measuring apparatus disclosed in Japanese Patent Application Laid-Open No. 2000-31231 (2000.01.28) or a process condition measuring apparatus disclosed in US Patent No. 7,540,188 (2009.06.02) Proposed.

The wafer temperature measuring apparatus disclosed in Japanese Patent Laid-Open No. 2000-31231 uses a thermocouple, and since the wires and the lead wires are drawn out from the RTD installed in the recess of the wafer, the wires and the lead wires are Too complicated to intertwine, it is not possible to install a lot of resistance thermometer in several places. At this time, it is difficult to grasp the temperature uniformity over the entire area of the wafer.

In order to solve this problem, the multi-layer resistance-thermoelectric thermometry wafer sensor and method of manufacturing the same of Korean Patent No. 10-1746560, a technique for forming a first thermocouple and a second thermocouple constituting the thermocouple in different layers. It is starting.

Using this technique, the thermoelectric part can be evenly installed on the wafer, so that the temperature uniformity over the entire area of the wafer can be grasped in detail.

However, since Patent No. 10-1746560 uses only one reference resistance, it is difficult to calibrate the Seebeck coefficient of each thermoelectric part, and thus it is sure that the temperature at each point calculated by adding the temperature difference measured through each thermoelectric part to the reference temperature is correct. Can not.

In addition, each thermoelectric is composed of two different types of wires, the electromotive force generated through this is very small and difficult to measure.

Accordingly, the present invention has been made to solve the above problems, and it is possible to correctly correct the Seebeck coefficient of the elements constituting the thermocouple, and to amplify the magnitude of the electromotive force generated in each thermoelectric part, thereby covering the entire area of the wafer. It is an object of the present invention to provide a multi-layer resistance-thermoelectric thermocouple wafer sensor that can more conveniently and accurately grasp temperature uniformity.

Still another object of the present invention is to provide a method of manufacturing such a multilayer resistance-thermoelectric thermometric wafer sensor.

In order to achieve the above object, the multilayer resistance-thermoelectric temperature measuring wafer sensor according to the present invention comprises a plurality of reference resistors formed on the wafer; A thermocouple formed between two reference resistors and one or more thermocouples connected in series from one end of the reference resistor; A wiring section comprising connection wirings between each measurement contact point (both ends of the reference resistance and the thermoelectric section) and the measurement terminal; And an interlayer insulating layer disposed between the layer in which the thermoelectric part is formed and the layer in which the wiring part is formed.

In this case, the reference resistance and the thermoelectric part are formed on the same layer, and each of the measurement contacts and the corresponding connection wirings are connected to each other through a via hole formed through the interlayer insulating layer.

Three reference resistors may be intermittently formed in a linear direction from the center of the wafer toward the edge. In this case, the thermoelectric part is formed between two adjacent reference resistors.

The thermocouple may be configured in such a manner that two kinds of conductive wires forming a thermocouple are repeatedly connected in series with each other in turn.

The two kinds of wires may be made of gold and platinum, respectively.

The number of times the two types of conductive wires alternately appear may be configured to be 100 times or more and 1,000 times or less.

The thermoelectric part may be formed such that each conductive wire constituting the thermocouple has a zigzag shape between two regions. In this case, the size of each region may be 100 μm or less, and the distance between the two regions may be 1 cm or more.

In accordance with another aspect of the present invention, there is provided a method of manufacturing a multilayer resistance-temperature thermoelectric wafer sensor, comprising: forming connection wirings connecting respective measurement contacts and measurement terminals on a wafer; Forming an interlayer insulating layer on the connection wiring; Forming a via hole in the interlayer insulating layer so that one end of each connection line is exposed; Forming a conductive plug in each of the via holes; And forming each reference resistance and a thermoelectric part to electrically connect each measurement contact point to the conductive plug.

In this case, three reference resistors may be intermittently formed in a linear direction from the center of the wafer toward the edges, and the thermoelectric part may be formed between two adjacent reference resistors.

In the wafer sensor according to the present invention, the reference resistance used to measure the temperature and each thermoelectric element are formed in a layer different from the layer where the connection wiring is formed.

For this reason, each thermoelectric part can be provided evenly over the whole area of a wafer sensor, without interrupting wiring.

A plurality of reference resistors can accurately determine the reference temperature, and by calibrating the Seebeck coefficient of each thermoelectric part, it is possible to more accurately measure the temperature difference between each measurement contact point.

In particular, since each thermoelectric part physically amplifies the magnitude of the electromotive force to be measured, the electromotive force of each thermoelectric part can be measured more conveniently and easily.

Accordingly, the temperature uniformity of the entire area of the wafer can be more conveniently and accurately grasped.

1 is an embodiment of a multilayer resistance-thermoelectric thermometric wafer sensor according to the present invention;

2 is an embodiment of a thermocouple;

3 is an embodiment illustrating a multilayer structure;

4 is an embodiment of a layer in which a connection wiring is formed;

5 is an embodiment of a method for manufacturing a multilayer resistance-thermoelectric thermometric wafer sensor according to the present invention.

As the present invention allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the written description.

However, this is not intended to limit the present invention to specific embodiments, it should be understood to include all transformations, equivalents, and substitutes included in the spirit and scope of the present invention.

In the following description of the present invention, if it is determined that the detailed description of the related known technology may obscure the gist of the present invention, the detailed description thereof will be omitted.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprise" or "have" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

1 shows an embodiment of a wafer sensor 100 according to the present invention, a reference resistance (Rc, Rm, Re) as a resistance temperature sensor and a thermoelectric part (UC) as a thermoelectric temperature sensor on a substrate 101. , UC1, UC2).

The substrate 101 of the wafer sensor 100 may be used for semiconductor manufacturing, but is not limited thereto.

The substrate 101 may include a measuring plate heat-treated by an electric furnace or a hot plate, or a thin plate used in such a condition. That is, it may be a thin plate to be subjected to heat treatment, a member having such a surface shape and such a heat capacity, or the thin plate itself to be subjected to heat treatment.

The reference resistors Rc, Rm, and Re are used to measure the reference temperature, and a plurality of reference resistors are provided. The number of reference resistors may be configured in various ways.

The reference resistances (Rc, Rm, Re) may be a resistance temperature sensor that measures the temperature in a resistive manner, and is used to measure the temperature of a specific point of the substrate 101, and the reference resistances (Rc, Rm, Re) The temperature measured by is the reference temperature.

The reference resistors Rc, Rm, and Re may be configured in various ways. For example, the wires may be formed of conductive wires formed on the substrate 101. The wires may have a serpentine shape, but the wires are not limited thereto.

The reference resistors Rc, Rm, and Re may be arranged in various ways. As a specific example, the reference resistors Rc, Rm, and Re may be intermittently formed in a straight direction from the center of the substrate 101 toward the edge. The thermoelectric part is disposed between the reference resistors which are intermittently arranged.

1 shows an example in which three reference resistors Rc, Rm, and Re are intermittently arranged, and thermoelectric parts UC1 and UC2 are formed between the reference resistors Rc and Rm and between the reference resistors Rm and Re, respectively.

In addition, the measurement terminal 110 is provided on the substrate 101. Both ends of each reference resistor (Rc, Rm, Re) and both ends of each thermoelectric part (UC) form a measurement contact, each measurement contact is connected to the measurement terminal 110 through a connection wiring, the measurement terminal 110 Through this measurement can be made at each measuring contact.

The thermoelectric part UC is formed on the same layer as the layer on which the reference resistors Rc, Rm, and Re are formed, and may be a thermoelectric temperature sensor measuring temperature by thermoelectric. The thermoelectric part UC is used to measure the temperature difference at each point on the substrate 101.

The thermoelectric part UC may be disposed at various positions as well as between the two reference resistors (UC1 and UC2). As a specific example, one or more thermoelectric units UC may be connected in series from one end of each of the reference resistors Rc, Rm, and Re, and may be disposed by branching again from a point where the thermoelectric unit and the thermoelectric unit are connected.

The thermocouple UC may be configured using two kinds of conductive wires forming a thermocouple.

In this case, each conductor may be made of various materials. For example, it may be selected from the group consisting of gold (Au), platinum (Pt), aluminum, nickel, copper, titanium, and combinations thereof. Among these, when the conductive wire made of gold (Au) and the conductive wire made of platinum (Pt) are used, it is made of pure metal and thus has an advantage of showing uniform thermoelectric performance.

Hereinafter, for convenience of description, an example in which the thermoelectric unit UC is formed of a conductive wire made of gold (Au) and a conductive wire made of platinum (Pt) will be described.

By the way, even if the temperature difference can be known by measuring the electromotive force through the thermoelectric unit (UC), the electromotive force generated by the temperature difference across the thermoelectric unit (UC) is very small, it is not easy to measure.

The thermoelectric part UC of the wafer sensor 100 according to the present invention is configured such that two kinds of conductive wires forming the thermocouple are connected in series repeatedly alternately a plurality of times.

FIG. 2 illustrates an embodiment of a thermoelectric unit UC, in which a conductive wire L1 made of gold and a conductive wire L2 made of platinum are arranged in a zigzag form between both ends V1 and V2 of the thermoelectric part UC. Formed.

The conductive line L1 made of gold is formed from the region a1 to the region a2, and the structure in which the conductive line L2 made of platinum bonded to the conductive line is formed in the region a1 in the region a2 is repeated a plurality of times so that one thermoelectric part UC ) Is configured.

Both ends V1 and V2 of the thermoelectric part UC form a measurement contact point, and are electrically connected to the measurement terminal 110 through connection lines p1 and p2, respectively. At this time, the connection wirings p1 and p2 are formed in a different layer from the thermoelectric part UC.

When the conductor L1 made of gold and the conductor L2 made of platinum form a thermocouple, a constant electromotive force is generated according to the temperature difference appearing at both ends. When n thermocouples are connected in series, the electromotive force appearing at both ends V1 and V2 of the thermocouple UC may be amplified by about n times the electromotive force shown through one thermocouple.

In order for physical amplification to take place sufficiently in series with thermocouples, the size of the regions a1 and a2 where the junctions of the gold and platinum conductors exist and the distance between the regions a1 and a2 need to be well designed. .

In this regard, it is preferable that the size of the regions a1 and a2 (the maximum distance between the junctions, d1) in which the junctions of the conductive lines exist is small enough to assume that the temperatures of all junctions belonging to the same region are the same. Further, the distance d2 between the regions a1 and a2 is preferably sufficiently spaced apart.

As a specific example, the size of each region a1 and a2 where the junctions of the conductive wires constituting the thermocouple are collected may be 100 μm or less, and the distance d2 between the regions a1 and a2 may be 1 cm or more. It doesn't happen.

Equation 1 below illustrates that physical amplification is performed in the embodiment of the thermoelectric unit UC shown in FIG. 2.

<Equation 1>

Where? T is 't2-t1' and? S is 'S _AU -S _pt '.

In addition, t0 is the temperature of the portion where the connecting wirings p1 and p2 are connected to the measuring terminal 110, t1 is the temperature of the region a1, t2 is the temperature of the region a2, n is the number of times each conductor appears alternately, S _AU is The Seebeck coefficient of the conductor made of gold (Au), S _pt is the Seebeck coefficient of the conductor made of platinum (Pt).

Equation 1 shows that when the thermocouples are connected in series by n times, amplification may be performed about n times of the electromotive force generated by one thermocouple.

The number of times the two types of conductors alternately appear repeatedly in the thermoelectric unit UC may be variously configured according to the need for physical amplification. As a specific example, the number of times the two types of conductors may be alternately repeated may be configured to 100 or more times 1,000, but is not limited thereto.

Assuming that the electromotive force generated by one gold lead and platinum lead is 10 μV, if the number of times the gold lead and the platinum lead appears alternately is 1,000, the electromotive force measured through one thermoelectric unit (UC) is about 10 mV. Therefore, it becomes easy to measure the electromotive force of the thermoelectric part UC at the measurement terminal 110 of the wafer sensor.

On the other hand, both reference resistances (Rc, Rm, Re) and both ends of the thermoelectric (UC) forms a measuring contact, each measuring contact is electrically connected to the measuring terminal 110 through a connection wiring, the thermoelectric (UC) And connection wiring are formed on different layers.

Referring to FIG. 3, the wiring unit 102 includes each connection wiring 103 connecting between each measurement contact point and the measurement terminal 110, and reference resistances Rc, Rm, and Re and the thermoelectric unit UC. Is formed on a layer different from the wiring portion 102.

Accordingly, the thermoelectric unit UC may be evenly installed over the entire area without being disturbed by the connection wiring 103 to the measurement terminal 110.

Since the wafer sensor 100 can be used to measure the surface temperature, the layer 109 on which the reference resistors Rc, Rm, and Re and the thermoelectric unit UC are formed is disposed above the layer on which the wiring unit 103 is formed. It is preferable to arrange.

An interlayer insulating layer 105 is provided between the layer 109 on which the thermoelectric part UC is formed and the layer on which the connection wiring 103 is formed, and each measurement contact point and the corresponding connecting wiring ( Via holes 107 are formed to electrically connect 103.

That is, each measurement contact point and a corresponding connection wiring are connected to each other through a via hole 107 formed through the interlayer insulating layer 105.

4 illustrates an example of a layer in which the wiring unit 102 is formed, which corresponds to the embodiment shown in FIG. 1, and has various connection wires for connecting each measurement contact to the measurement terminal 110. .

For better understanding of the description, the portions connected through the measuring holes V1 to V6 and via holes shown in FIG. 1 are denoted by the same reference numerals V1 to V6, and the measuring contacts V1 and V2 are measured in the example shown in FIG. Connection lines p1 and p2 connecting to the terminal 110 are also indicated by the same reference numerals.

In relation to the connection wiring, a reference resistance measurement wiring may be provided between both ends of the reference resistors Rc, Rm, and Re and the measurement terminal 110.

Here, the reference resistance measurement wiring may include a connection wiring for measuring electromotive force and a connection wiring for applying a current to measure resistance values for each temperature.

Each connection wiring may be made of various materials. For example, each connection line may be formed of gold, but is not limited thereto.

Via holes may be filled with conductive plugs of various materials. For example, the via hole may be filled with gold or platinum, but is not limited thereto.

When such temperature nonuniformity occurs in the wafer sensor 100, a potential difference occurs between the respective measurement contacts due to the Seebeck effect.

Therefore, when the potential difference at each measurement contact point is measured through the measurement terminal 110 where the connection wires are collected, it is possible to determine where the temperature irregularity occurs. That is, since the temperature difference can be known through the potential difference of each thermoelectric part UC, the temperature at each point can be measured by adding each temperature difference to the reference temperature.

At this time, in order to closely grasp the temperature nonuniformity with respect to the entire area of the wafer sensor 100, the measurement contact should be large. However, when the thermoelectric unit UC and the connection wiring exist on the same plane, the installation space of the thermoelectric unit UC is restricted for the installation of the connection wiring.

However, when the thermoelectric part and the connection wiring are arranged in different layers as in the present invention, the thermoelectric part can be evenly installed on the entire substrate 101 without being disturbed by the connection wiring, so that the temperature uniformity can be grasped in detail over the entire area. have.

Now let's take a look at calibration using reference resistance.

First, by measuring the resistance value for each temperature of the reference resistance, it is possible to accurately know the reference temperature that is the reference of the temperature measurement.

To this end, the wafer sensor 100 is placed in a constant temperature chamber where the temperature is kept uniform throughout, and a constant current flows through each reference resistance through measurement terminals connected to both ends of each of the reference resistors Rc, Rm, and Re. Then, the voltage applied to each of the reference resistors Rc, Rm, and Re is measured, the resistance value of each reference resistor is measured, and the correspondence relationship between the temperature and the resistance value is stored.

By repeating this process for each temperature, a corresponding relationship between temperature and resistance value can be obtained. The temperature-specific resistance value of the reference resistor can be used for temperature measurement in various forms. For example, you can database the relationship between temperature and resistance values, and derive a linear relationship between temperature and resistance values.

After the temperature-specific resistance value of the reference resistance is experimentally confirmed, when the actual temperature is measured, the temperature of each reference resistance is accurately determined by measuring the resistance value of the reference resistance.

In relation to the thermoelectric element UC, the wiring of the actual circuit may be implemented through a deposition process, in which the Seebeck coefficient value of the thermoelectric element UC may be influenced by contamination or secondary adhesion layer. This can change.

Therefore, not only the calibration for measuring the reference temperature but also the Seebeck coefficient of the thermoelectric part UC are required.

In the wafer sensor 100, thermocouples UC1 and UC2 are disposed between the respective reference resistors Rc, Rm, and Re so as to perform self calibration. The Seebeck coefficient may be corrected using the temperature deviation applied to the thermoelectric parts UC1 and UC2 and the resulting thermoelectric power.

The calibration of the thermoelectric part UC may be performed as follows.

First, the wafer sensor 100 on which the calibration procedure for the reference temperature is completed is placed on a heater having a temperature gradient, and the respective reference temperatures and the electromotive force at both ends of the thermoelectric parts UC1 and UC2 are measured.

At this time, since the temperature difference between the thermocouples UC1 and UC2 can be accurately known through the reference temperature calibration, the Seebeck coefficients of the thermocouples UC1 and UC2 are calculated using the information and electromotive force information of both ends of the thermocouples UC1 and UC2.

By using the calculated Seebeck coefficients of the thermocouples UC1 and UC2, a method of correcting the Seebeck coefficient for each of the other thermocouples UC may be variously configured.

For example, the average of the Seebeck coefficient values of the thermocouples UC1 and UC2 may be set as the reference Seebeck coefficient of all the thermocouples UC.

Through the above process, the Seebeck coefficient of each thermoelectric unit UC may be corrected, and if necessary, the Seebeck coefficient may be corrected for each temperature.

Now, the temperature at each point of the wafer sensor 100 can be calculated by adding the temperature difference (Δt, relative temperature) obtained through the thermoelectric part to the 'reference temperature'.

Through the calibration of the reference temperature and the Seebeck coefficient of each thermoelectric part, it is possible to accurately know not only the reference temperature but also the temperature difference in each thermoelectric part UC, so that the temperature at each point obtained by adding each temperature difference to the reference temperature is highly reliable.

3 and 5, an embodiment of a method of manufacturing the wafer sensor 100 according to the present invention will be described.

First, the connection wiring 103 connecting each measurement contact point and the measurement terminal is formed on the substrate 101 (S210).

In this case, a metal layer of a material to be used for connection wiring may be formed on the substrate 101, and then the metal layers may be patterned to form respective connection wirings 103.

The connection wiring 103 may be made of various materials. As a specific example, the connection wiring 103 may be made of gold, but is not limited thereto.

Now, an interlayer insulating layer 105 is formed on the connection wiring 103 (S220).

A via hole 107 is formed in the interlayer insulating layer 105 so that one end of each connection wiring 103 is exposed (S230), and a conductive plug is formed in each via hole 107 (S240).

The conductive plug may be made of various materials. For example, the conductive plug may be made of gold or platinum, but is not limited thereto.

Then, each reference resistance and the thermoelectric part are formed to electrically connect each measurement contact point to the conductive plug (S250).

That is, the reference resistance and the thermoelectric part are formed on the interlayer insulating layer 105 so that each measuring contact is connected to each conductive plug formed in step S240. Then, each measuring contact is connected to the corresponding connection line 103 through the conductive plug (through the via hole), and is also electrically connected to the measurement terminal 110 corresponding to itself through the connection line 103.

The number and arrangement of reference resistors formed in step S250 may be variously configured. As a specific example, three reference resistors may be intermittently formed in a linear direction from the center of the substrate toward the edges, and a thermoelectric portion may be formed between two adjacent reference resistors.

In addition, the thermocouple may be configured such that two kinds of conductors forming the thermocouple are repeatedly connected in series with each other in turn. The material of the conductive wire constituting the thermoelectric part may be configured in various ways, using a conductive wire made of gold (Au) and a conductive wire made of platinum (Pt) has an advantage of showing uniform thermoelectric performance because it is made of pure metal.

The number of alternating repetitions of the two types of wires forming the thermocouple may be variously configured according to the need for physical amplification. As a specific example, the number of times the two types of conductors may be alternately repeated may be configured 100 times or more, but is not limited thereto.

In addition, as described with reference to FIG. 2, the size of the regions a1 and a2 (the maximum distance between the junctions, d1) in which the junctions of the conductive lines exist is small enough to assume that the temperatures of all junctions belonging to the same region are the same. desirable. Further, the distance d2 between the regions a1 and a2 is preferably sufficiently spaced apart.

As a specific example, the size of the regions a1 and a2 where the junctions of the conductive wires constituting the thermocouple are collected may be 100 μm or less, and the distance d2 between the regions a1 and a2 may be 1 cm or more. It is not limited.

While the invention has been shown and described with respect to certain preferred embodiments thereof, it will be understood that the invention may be modified and modified in various ways without departing from the spirit or scope of the invention provided by the following claims. It will be apparent to one of ordinary skill in the art that it can.

[Description of the code]

100: wafer sensor 101: substrate

102: wiring portion 105: interlayer insulating layer

107: via hole 110: measuring terminal

a1, a2: area where the junction points are collected

Rc, Rm, Re: reference resistance p1, p2, 103: connection wiring

V1 to V6: Measuring contact UC, UC1, UC2: Thermoelectric

Claims (15)

1. A plurality of reference resistors formed on the wafer;

   A thermocouple formed between each reference resistor and at least one thermocouple connected in series from one end of the reference resistor;

   A wiring section comprising connection wirings electrically connecting each measurement contact point (both reference resistance and the thermoelectric section) and the measurement terminal; And

   An interlayer insulating layer disposed between the layer in which the thermoelectric part is formed and the layer in which the wiring part is formed;

   The reference resistance and the thermoelectric part are formed in the same layer,

   And each of the measurement contacts and corresponding connection wirings are connected to each other through a via hole formed through the interlayer insulating layer.
2. The method of claim 1,

   And three reference resistors are intermittently formed in a linear direction from the center of the wafer toward the edges, and the thermoelectric portion is formed between two adjacent reference resistors.
3. The method of claim 1,

   The thermoelectric part is a multi-layer resistance-thermoelectric temperature measuring wafer sensor, characterized in that the two types of conductive wires forming a thermocouple (thermocouple) is configured in a form that is alternately repeated in series a plurality of times.
4. The method of claim 3, wherein

   And the two kinds of wires are gold wires and platinum wires.
5. The method of claim 3, wherein

   A multi-layer resistance-thermoelectric temperature measurement wafer sensor, characterized in that the number of turns of the two kinds of conductors alternately repeats 100 to 1,000 times.
6. The method of claim 3, wherein

   The thermocouple is a multi-layer resistance-thermoelectric thermocouple wafer sensor, characterized in that each conductive wire constituting the thermocouple is formed in a zigzag form between two regions, the size of each region is 100 μm or less, and the distance between the two regions is 1 cm or more. .
7. The method of claim 1,

   And the via hole is filled with gold or platinum.
8. The method of claim 1,

   The connection wiring is a multilayer resistance-temperature thermoelectric wafer sensor, characterized in that consisting of gold.
9. The method of claim 1,

   And a reference resistance measurement interconnection connected between both ends of the reference resistance and the measurement terminal.
10. The method of claim 1,

    And the layer in which the reference resistor and the thermoelectric part are formed is disposed above the layer in which the wiring part is formed.
11. A method of manufacturing the multilayer resistance-thermoelectric thermometric wafer sensor according to claim 1,

    Forming connection wirings connecting the respective measurement contacts and the measurement terminals on the wafer;

    Forming an interlayer insulating layer on the connection wiring;

    Forming a via hole in the interlayer insulating layer so that one end of each connection line is exposed;

    Forming a conductive plug in each of the via holes; And

    Forming each reference resistance and a thermoelectric part to electrically connect each measurement contact point to the conductive plug,

    And three reference resistors are intermittently formed in a linear direction from the center of the wafer toward the edges, and the thermoelectric portion is formed between two adjacent reference resistors.
12. The method of claim 11,

    The thermoelectric part is a method for manufacturing a multi-layer resistance-thermoelectric temperature measurement wafer sensor, characterized in that the two kinds of conductors forming a thermocouple are connected in series repeatedly alternately a plurality of times.
13. The method of claim 12,

    A method for manufacturing a multilayer resistance-thermoelectric temperature measurement wafer sensor, characterized in that the number of times the two kinds of conductors are alternately repeated is 100 or more and 1,000 or less.
14. The method of claim 12,

    The thermoelectric part is formed in a zigzag form between each of the conductive wires constituting the thermocouple, the size of each region is less than 100μm,

    And the distance between the two regions is 1 cm or more.
15. The method of claim 11,

    The connecting wiring is made of a gold multi-layer resistance-thermoelectric temperature measuring wafer sensor manufacturing method characterized in that.

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