JPH11118616A - Temperature sensor, semiconductor wafer with temperature measuring function, and method of forming thermocouple sensor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable measuring the surface temperature of a wafer in a semiconductor manufacturing equipment, improve precision, and reduce cost. SOLUTION: This temperature sensor contains a semiconductor wafer 26 having a thermocouple contact 46 formed or arranged on the wafer surface 30. The thermocouple contact 46 can contain a first patterned conductor 36 and a second patterned conductor 40 formed separately from the conductor 36. The first and the second patterned conductors 36 and 40 are in electric contact with each other and form the thermocouple contact 46 in an overlap region. Other thermocouple contacts are formed above the thermocouple contact 46, and a plurality of thermoelectric couples laminated in the vertical direction are formed. Thereby the temperature gradient in the vertical direction can be measured.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates generally to a temperature sensor device for measuring temperature in a manufacturing process,
More specifically, the present invention relates to a semiconductor wafer with a temperature measurement function.

[0002]

2. Description of the Related Art Temperature, particularly at the surface of a semiconductor wafer, is an important process parameter in a semiconductor manufacturing process. To control the temperature of the wafer surface, it must first be accurately measured. Prior Art Thermocouple-embedded semiconductor wafer 1 for determining wafer temperature during semiconductor manufacturing process
0 is shown in FIG. The semiconductor substrate 12 having the upper surface 14
The substrate 12 has a cavity 16 therein. Thermocouple contact 1 formed by two dissimilar conductors 20
8 is wrapped in a sheath 22. The sheath 22 is embedded in the cavity 16 and contains a ceramic embedding compound (ceramic).
(potting compound) 24. Due to the temperature difference between the cold junction (not shown) and the thermocouple junction 18, the electromotive force, which can be measured in millivolts,
force) occurs.

[0003]

One disadvantage of the prior art thermocouple embedded semiconductor wafer 10 of FIG. 1 is the uneconomical and laborious manufacturing process. Manufacturing the sensor includes forming a hole in substrate 12 to provide cavity 16. The thermocouple contact 18 formed by the wiring 20 must be manually inserted into the cavity 16 and the ceramic embedding compound 24 must be filled into the cavity 16 to secure the thermocouple contact 18. No. Furthermore, because the thermocouple contacts 18 are small (to fit within the cavity 16), the device is extremely fragile.
Furthermore, (thermal surface gradient)
Often, one wants to obtain temperatures at different locations near the surface 14 of the substrate 12 (in order to obtain the same), in which case the cost of the device will increase dramatically as the number of thermocouples in the substrate 12 increases. I was

[0004] Another disadvantage of the prior art embedded thermocouple semiconductor wafer 10 is the limited lifetime of the sensor in high temperature measurement applications. Fixing the thermocouple sheath 22 in the ceramic embedding compound 24 results in a brittle structure that is easily damaged during handling. As a result, the temperature sensor according to the prior art needs to be periodically replaced, so that the cost is further increased with time.

[0005] Yet another disadvantage of the prior art temperature sensor is that due to the mass of the thermocouple contacts 18, thermocouple wires 20 and sheath 22, the embedded thermocouple contacts 18.
Is to apply a thermal load to the wafer. This thermal load causes a disturbance in the temperature of the wafer in the cavity 16 where the thermocouple contacts are located, and in the portion of the wafer surface along the sheath 22 that can lead to inaccurate temperature measurements. Further, it may be desirable to provide multiple thermocouple contacts on the wafer, in which case the wiring, contacts and corresponding sheaths will cause additional disturbances in the wafer temperature distribution and make handling the wafer difficult. I was

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and has a high-precision and temperature-measuring function capable of measuring the surface temperature of a wafer in a semiconductor manufacturing apparatus. It is an object of the present invention to provide a semiconductor wafer with a temperature, a temperature sensor, and a method of forming a thermocouple sensor.

[0007]

SUMMARY OF THE INVENTION A temperature sensor according to the present invention is a temperature sensor having a semiconductor wafer and a thermocouple contact on a surface of the semiconductor wafer, and achieves the above object.

[0008] The thermocouple contact may include a first conductor formed on the semiconductor wafer and a second conductor formed on the semiconductor wafer. The body is spaced apart from the first conductor, the first and second conductors being different conductors and electrically contacting each other in the overlap region to form a thermocouple contact. May be.

The thermocouple contact may include a first conductor and a second conductor provided separately from the first conductor, wherein the first and second conductors are In the overlap region, the thermocouple contacts may be formed in electrical contact with each other.

[0010] The semiconductor device may further include an insulating layer provided between the semiconductor wafer and the thermocouple contact.

[0011] An electric connector connected to the thermocouple contact and relaying an electric signal from the thermocouple contact may be further provided.

[0012] The semiconductor device further includes a plurality of thermocouple contacts located at various locations on the semiconductor wafer, the plurality of thermocouple contacts operable to provide an electrical indication of temperature at the various locations. Yes, a temperature mapping sensor may be created.

[0013] An insulating layer on the thermocouple contact and a second thermocouple contact on the insulating layer are provided to form two vertically stacked thermocouples, one of the thermocouples being stacked on the other. A thermocouple may sense a temperature on the surface of the semiconductor wafer, and the other thermocouple may sense a temperature at a predetermined height from the surface of the semiconductor wafer.

Further, the semiconductor wafer with a temperature measuring function according to the present invention comprises a substrate, an insulating layer on the substrate, a first conductor on the insulating layer, and a first conductive material on the insulating layer. A second conductor provided horizontally apart from the body;
And the second conductor is a semiconductor wafer with a temperature measurement function that contacts each other in the overlap region to form a thermocouple contact on the surface of the wafer, thereby achieving the above object.

[0015] A plurality of first and second pairs each being paired.
May be further provided to form a plurality of thermocouple contacts at different positions near the wafer surface, thereby performing temperature mapping of the wafer.

[0016] The first electrical conductor may comprise a patterned strip extending from the overlap region to an electrical connector.

The semiconductor device further comprises a diffusion barrier layer provided between the insulating layer and the first and second conductors, the diffusion barrier layer being provided between the substrate and the first and second conductors. The movement of the semiconductor material may be prevented.

[0018] A protective layer on the first and second conductors may be further provided, thereby protecting the first and second conductors from contamination or deterioration.

[0019] The first conductor may be tantalum, and the second conductor may be nickel.

The first and second conductors may be different from each other and include a thermocouple material.

The first and second conductors are different from each other and include tantalum, nickel, rhodium, iron, aluminum, copper, iridium, molybdenum, platinum, titanium,
It may be selected from the group consisting of tungsten, gold, and chromium.

[0022] The electronic device may further include an electrical connector connected to the thermocouple contact, the electrical connector operable to transmit an electrical signal to / from the thermocouple contact.

The method of forming a thermocouple sensor according to the present invention includes the steps of forming an insulating layer on a semiconductor substrate and forming a thermocouple contact on the insulating layer. Achieves the above object.

[0024] The step of forming an insulating layer on the semiconductor substrate may include depositing an insulator selected from the group consisting of silicon dioxide, silicon nitride, and alumina.

The step of forming a thermocouple contact includes the steps of depositing a first conductive layer on the insulating layer and patterning the first conductive layer to form a conductive strip having an end. Forming a second insulating layer on the conductive strip;
Forming a hole in said second insulating layer to reach said end of said first conductive strip by patterning said insulating layer; and forming a second conductive layer on said second insulating layer. Depositing the second conductive layer, wherein the second conductive layer is made of a different conductive material from the first conductive layer;
Electrically contacting the first conductive strip through the hole in the second insulating layer to form a thermocouple contact; and patterning the second conductive layer. Forming a second conductive strip.

[0026] The step of forming a thermocouple contact may include forming a first conductor on the insulating layer and forming a second conductor on the insulating layer. Preferably, the second conductor is provided horizontally apart from the first conductor, is different from the first conductor, and is electrically connected to the first conductor at a termination point. You may make it contact.

The method may further include forming an insulating layer on the first and second conductors, such that the first and second conductors maintain electrical isolation from each other except at the termination point. In addition, the first and second conductors may be protected from contamination or deterioration.

The step of forming a thermocouple contact includes the steps of forming a first conductive layer and a second conductive layer on the insulating layer, and performing etching on the first and second conductive layers. Forming first and second patterned conductive strips, wherein the first and second conductive strips are spaced apart from each other and are dissimilar to each other, and are terminated. The points may be in electrical contact with each other.

Alternatively, a temperature sensor according to the present invention comprises a semiconductor wafer and a plurality of thermocouples formed on the semiconductor wafer and electrically insulated from each other, whereby the thermocouples are vertically arranged on the semiconductor wafer. Forming a stacked thermocouple, wherein the plurality of thermocouples are operable to sense temperatures at a plurality of heights on the semiconductor wafer, thereby providing a vertical temperature gradient. Accordingly, the above object is achieved.

Alternatively, a temperature sensor according to the present invention comprises a semiconductor wafer, a first conductor deposited and patterned on the semiconductor wafer, and an insulating layer formed and patterned on the first conductor. An insulating layer having a hole on one end of the first conductor in the insulating layer, and a second conductor deposited and patterned on the insulating layer, wherein the hole is A second conductor forming a thermocouple contact by electrically contacting the first conductor via the first conductor, thereby achieving the above object.

[0031]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor wafer with a temperature measuring function according to the present invention has a thermocouple formed or arranged on a semiconductor wafer. Since the thermocouple is on the surface of the semiconductor wafer, the temperature of the wafer surface can be accurately determined without considering the vertical temperature gradient in the semiconductor wafer. Forming a thermocouple on the surface using semiconductor manufacturing technology can reduce the mass of the thermocouple contacts and associated leads to less than the mass of discrete thermocouples of the prior art, thus reducing thermal load. The resulting error is also reduced. Multiple such thermocouples are formed and placed at various locations on the semiconductor wafer surface, thereby providing a thermal surface profile of the semiconductor wafer.
e) can be mapped (ie, the distribution determined).

Forming an electrically insulating material on the semiconductor substrate,
Thereafter, the thermocouple can be formed by patterning two different conductive materials on the insulating material. The two dissimilar conductive materials are oriented horizontally with respect to each other, except for the overlap region where the two dissimilar conductive materials overlap and electrically contact each other to form a thermocouple contact. They are spaced apart (and are therefore electrically isolated from each other). The thermocouple may be covered by a protective layer that protects the thermocouple from contamination or degradation. The protective layer is electrically insulating, which further maintains the electrical isolation of the conductive material (except for the contacts). Also, the protective layer is thermally conductive, which allows the actual wafer surface temperature to be accurately measured by thermocouple contacts.

A method of forming a thermocouple sensor according to the present invention includes forming or placing a thermocouple on a surface of a semiconductor wafer. Forming the thermocouple on the surface of the semiconductor wafer includes forming first and second different types of conductive materials on the insulating material horizontally apart from each other. The patterned first and second conductors are in overlapping electrical contact with each other in the overlap region, thereby forming a thermocouple contact. Similarly,
A plurality of such thermocouples can be formed at various locations near the semiconductor wafer surface, which allows mapping of the thermal surface profile on the semiconductor wafer surface.

FIG. 2 is a perspective view of a semiconductor wafer 26 having a temperature measuring function according to the present invention. The semiconductor wafer 26 with a temperature measurement function includes a semiconductor substrate 28 having an upper surface 30. Alternatively, substrate 28 may include other materials such as alumina, glass, ceramics, and the like. A plurality of thermocouples 32 are formed on the wafer substrate 28. Each thermocouple 32 has a first conductive strip 36 formed on top surface 30. First
One end of the conductive strip 36 is connected to a first bond pad 38.
It is in. The second conductive strip 40 is provided horizontally apart from the first conductive strip 36 and has one end at a second bond pad 42. The other ends of the first and second conductive strips 36 and 40 are both
Is within. Conductive strips 36 and 40 in region 44
Overlap and are in electrical contact with each other to form a thermocouple contact 46. Other thermocouples 32 may be the same in structure and shape, only differing in location on the wafer surface 30.

In a preferred embodiment, the semiconductor wafer 26 having the temperature measuring function shown in FIG.
er connector fixture) 48. The wafer connector fixture 48 includes a stress relief clamp.
mp) 50 and the wafer connector 5 joined together
2 The wafer connector fixture 48 holds the semiconductor wafer 26 and a plurality of thermocouple wiring sheaths 54 each having two wirings 56. Stress relief clamp 50
And the wafer connector 52 includes a plurality of thermocouple sheaths 54.
And fix them to the wafer 26. Due to this feature, the durability is improved, and a usable state is maintained regardless of how the operator handles it. Of each two wires 56 in each thermocouple sheath 54, a first wire is to a first bond pad 38 of the thermocouple 32 and a second wire is to a second bond pad of the thermocouple 32. 42 is electrically connected. In a preferred embodiment, two wires 56
Are welded to the respective bond pads 38 and 42 to obtain a pure transition, thereby avoiding problems with eutectics and maintaining homogeneity in the transition. By connecting a connector 58 to each thermocouple sheath 54, the thermocouple contacts 46 are electrically connected to a conversion circuit (not shown). In operation, the thermocouple contact 46 of the semiconductor wafer 26 with temperature sensing senses the temperature difference between the thermocouple contact 46 and the other end (eg, the cold junction) and generates an electromotive force in millivolts. The magnitude of this voltage is a function of the temperature difference and the thermocouple contact 46
Is converted to a temperature value representing the temperature at. Alternatively, the plurality of thermocouple sheaths 54 may be connected to a parallel connector (parallel-
(type connector), and may be electrically connected to the conversion circuit.

FIG. 3 is a side view showing the semiconductor wafer 26 with a temperature measuring function installed in the semiconductor manufacturing apparatus 60.
The connector 58 is electrically connected to the conversion circuit outside the device 60 via a feedthrough 59. Although this embodiment shows a sputtering apparatus, the present invention can be applied to all kinds of semiconductor manufacturing apparatuses.

FIG. 4 is an enlarged perspective view of one of the thermocouples 32 of FIG. 2 showing an end region 44 where a thermocouple contact 46 is formed. As shown, the first conductor 36 is provided along the longitudinal direction of the second conductor 40 at a horizontal distance from the second conductor 40. The first conductor 36 and the second conductor 40 curve toward each other at an end region 44 and make electrical contact with each other at an overlap region 46 to form a thermocouple contact 46. In the preferred embodiment, one conductor 36 is tantalum and the other conductor 40 is nickel. The conductors 36 and 40 are preferably pure metals because it is difficult to maintain compositional uniformity within the alloy and the thermoelectric properties of the alloy are strongly dependent on its composition. By using a pure substance, the compatibility between the conductors 36 and 40 and the two wirings 56 is also improved.

FIG. 5 is a sectional view taken along the dotted line 62 in FIG. In this position, conductors 36 and 40 are provided horizontally apart from each other and are electrically isolated from each other. On the semiconductor substrate 28 is an insulating layer 66, on which the conductors 36 and 40 are formed by deposition and patterning. In a preferred embodiment, a protective layer 68 is provided over both conductors 36 and 40. The protective layer 68 is not always necessary for the operation of the thermocouple, and can be arbitrarily omitted.
Is used, it is possible to protect the conductors 36 and 40 from contamination or deterioration. Preferably, the protective layer 6
8 is alumina.

FIG. 6 is a cross-sectional view of another embodiment, similar to the above, taken along dotted line 62 in FIG. This embodiment is substantially the same as the embodiment shown in FIG. 5, except that a diffusion barrier layer 70 is provided on the insulating layer 66. Diffusion barrier layer 70 is preferably alumina. By using the diffusion barrier layer 70 to prevent semiconductor material from migrating from the wafer substrate 28, contamination of the conductors 36 and 40 can be prevented.

FIG. 7 is a cross-sectional view along the dotted line 64 of FIG. In the overlap region, the conductors 36 and 40 overlap and are in electrical contact with each other. The overlap region is insulated from the wafer substrate 28 by the insulating layer 66,
Covered by a protective layer 68.

FIGS. 8A to 8H show the semiconductor wafer substrate 28.
A preferred method for forming a thermocouple on the surface 30 of the mask is a shadow masking film deposition process.
FIG. 4 is a partial cross-sectional view showing a deposition process). FIG.
In standard oxidation type processes such as steam (ox)
The wafer substrate 28, which may be made of silicon, is covered with an insulating layer 66 using an idation-type process or other known semiconductor manufacturing processes. Insulating layer 66 can be silicon dioxide or silicon nitride. Other types of insulating materials can be used. The insulating layer 66 insulates the thermocouple contacts 46 that are later formed on the insulating layer 66 from any electrical interference associated with the semiconductor wafer substrate 28.

Referring to FIG. 8 b, a first mask template 72 is disposed on the insulating layer 66.
The mask template 72 selectively contacts a subsequently formed material to the insulating layer 66. Then, FIG.
A first conductive layer 73 is deposited over the mask template 72 and the exposed portions of the insulating layer 66, as shown in FIG. Thereafter, when the mask template 72 is removed, the first conductor 36 remains as shown in FIG. 8D.

In FIG. 8E, a second mask template 74 is disposed on the first conductor 36. The mask template 74 selectively contacts a subsequently formed material with the first conductor 36 and the insulating layer 66. Thereafter, as shown in FIG. 8f, a second conductive layer 75 is deposited over the mask template 74 and the exposed portions of the first conductor 36 and the insulating layer 66. Thereafter, when the mask template 74 is removed, the second conductor 40 remains on the first conductor 36 and the thermocouple contact 46 is formed, as shown in FIG. 8g. Thereafter, a protective layer 68 is deposited on the first and second conductors 36 and 40, as shown in FIG. 8h.

FIGS. 9a to 9i are partial cross-sectional views showing another method of forming a thermocouple on the surface 30 of the semiconductor wafer substrate 28 using the photolithography technique. In FIG. 9a, the wafer substrate 28 is covered with an insulating layer 66 using a standard oxidation type process such as steam or other known semiconductor manufacturing processes. Insulating layer 66 can be silicon dioxide or silicon nitride. Other types of insulating materials can be used. The insulating layer 66 allows the insulating layer 6 to be formed later.
Thermocouple contacts 46 formed on 6 are isolated from any electrical interference associated with semiconductor wafer substrate 28.

Referring to FIG. 9b, a first conductive layer 76 is deposited on the insulating layer 66 using a chemical vapor deposition (CVD) technique, a sputter deposition technique, or other known semiconductor manufacturing processes. Thereafter, as shown in FIG. 9C, a photoresist 77 is deposited on the first conductive layer 76, and a photomask is formed by patterning the photoresist. For film uniformity, the conductor thickness should be at least 1000
Angstroms are preferred. Thereafter, the first conductive layer 76 is exposed, and then the first conductive layer 76 is exposed to the first conductive layer 36 as shown in FIG. 9d by using a dry reactive ion etching step, a chemical etching step or other known semiconductor manufacturing steps. To form

In FIG. 9E, a second conductive layer 78 is formed on the surface similarly to the first conductive layer 76. As in the case of the first conductive layer 76, a second photoresist 79 is formed on the second conductive layer 78, and is patterned to form a photomask as shown in FIG. 9F.
Thereafter, as in the case of the first conductive layer 76, the second conductive layer 78 is exposed and etched to form the second conductor 40 as shown in FIG. 9g. In FIG. 9h, when the first and second photoresists 77 and 79 are removed, the first and second conductors 36 and 40 are provided horizontally apart from each other,
It remains electrically separated from each other (however, the end region 4
Except 4 As shown in FIG. 7, in the end region 44, the first and second conductors 36 and 40 overlap each other by patterning and are in electrical contact with each other). Thereafter, a protective layer 68 is deposited on the first and second conductors 36 and 40, as shown in FIG. 9i.

FIG. 10 is a cross-sectional view of another embodiment of the present invention in which a thermocouple 80 has been fabricated vertically on surface 30 of semiconductor wafer 28. The thermocouple 80 has an insulating layer 66 formed on the substrate 28. Using either shadow masking or photolithography technology,
A first conductor 82 is formed on the insulating layer 66 by deposition and patterning. A second insulating layer 84 is formed on the first conductor 82 by deposition and patterning, such that a hole 85 reaching the first conductor 82 is formed at the end of the first conductor 82. . First conductor 8
A second conductor 86 is deposited and patterned on the second insulating layer 84 so as to make electrical contact with the exposed end of the second 2, thereby forming a thermocouple contact 87. Second
A third insulating layer 88 which can be arbitrarily omitted on the conductor 86 of FIG.
May be deposited.

The vertically manufactured thermocouple 80 shown in FIG. 10 has two conductors 82 and 8 of the thermocouple 80.
6 differ from the thermocouple 34 of FIG. 5 in that they are provided vertically, not horizontally, with respect to each other. This has the advantage that the required horizontal surface area for the thermocouples 80 is reduced and more thermocouples 80 as described above can be formed on the surface of the wafer 28.

FIG. 11 is a cross-sectional view showing a plurality of thermocouples 89 vertically stacked on the semiconductor substrate 28. This cross-sectional view is similar to FIG. 5 and is along a position where the conductors forming the plurality of thermocouples 89 are horizontally separated from each other. Similar to that shown in FIG. 7, the conductors forming the plurality of thermocouples 89 are in electrical contact at the end regions 44, thereby forming thermocouple contacts. In FIG. 11, an insulating layer 66 is provided on a substrate 28. First and second conductors 36 and 40
Are formed on the insulating layer 66 by patterning and are covered with a protective layer 68. In this example, the protective layer 68 functions as a second insulating layer. Similarly, the third
And fourth conductors 90 and 92 are formed on second insulating layer 68 by patterning, and
Covered with an insulating layer 94. The third and fourth conductors 90 and 92 form a second thermocouple above the first thermocouple. As shown, third and fourth thermocouples are formed in a similar manner over the first two thermocouples. As is well known to those skilled in the art, the selective electrical contact for each of the plurality of thermocouples 89 is:
It can be obtained through contact and via patterns. The plurality of thermocouples 89 enable the measurement of the temperature at a predetermined depth in the semiconductor wafer and the mapping of the temperature gradient in the vertical direction.

The present invention overcomes the disadvantages of the prior art wafer 10 shown in FIG. For example, when the semiconductor wafer 26 with the temperature measurement function shown in FIG. 3 is arranged in the semiconductor manufacturing apparatus 60, the thermocouple contact 46 is on the surface of the semiconductor wafer 26, so that the semiconductor wafer 26 with the temperature measurement function The temperature at the surface is accurately sensed. Thus, according to the present invention, errors due to vertical temperature gradients are avoided, thereby eliminating errors in thermocouple devices embedded vertically in the wafer.

The semiconductor wafer 26 with the temperature measuring function also substantially reduces errors caused by heat load. By forming the first and second conductors 36 and 40 on the surface 30 of the semiconductor wafer 26 using a semiconductor processing technique such as shadow masking or photolithography, the mass of the thermocouple contact 46 itself can be reduced by wiring connection. And the mass of the prior art sensor forming the thermocouple contact (the prior art contact 18 and adhesive 24 of FIG. 1) with the ceramic implant compound. The substantial reduction in the mass of the thermocouple contacts 46 reduces the thermal load. Further, the semiconductor wafer 26 with the temperature measurement function eliminates the thermocouple sheath 22 (prior art of FIG. 1) on the semiconductor wafer 26. Instead, the present invention utilizes first and second conductors 36 and 40 to relay electrical signals along wafer surface 30. The mass of the conductive strips 36 and 40 is substantially less than the mass of the sheath 22 on the prior art semiconductor wafer, which further reduces the thermal load compared to prior art thermocouple sensors. If a plurality of thermocouple contacts 32 are formed on the wafer, the amount of reduction in the thermal load is further increased.

The semiconductor wafer 26 with the temperature measuring function is an RTD
(Resistive temperature detectors). According to the thermocouple semiconductor wafer 26,
Temperatures up to 2400 ° C can be measured accurately, but RTDs guarantee accuracy up to 650 ° C
Up to. Therefore, the RTD is not suitable for many semiconductor processing steps that can reach 1200 ° C. Further, the semiconductor wafer with temperature measurement function 26 can be formed to include many thermocouple contacts, but the RTD is more limited. Since the RTD relies on accurate resistance measurements, it is necessary to extend the thick leads to the resistors to minimize the lead resistance. Such thick leads take up space and make it impossible to utilize a large number of sensing resistors.

In another embodiment, shown in FIG. 11, a plurality of thermocouples 89 allow mapping of vertical temperature gradients within a semiconductor wafer. Since the respective heights of the insulating layer and the conductive layer can be determined, the vertical depth of each thermocouple is known. Vertical temperature gradients are valuable information in semiconductor processing. This is because surface temperature is important for the current processing step, but temperatures at various depths in the substrate 28 are important for the preprocessing step. For example, if a region has been previously subjected to an implantation step, then the region will diffuse vertically and horizontally due to subsequent high temperature processing steps. The semiconductor circuit designer needs to know the expected degree of diffusion of the area. The plurality of thermocouples 89 makes it possible to accurately predict the diffusion. This is because, the placed thermocouple depth of the vertical (d ₁ ~d _4), because the temperature at that depth is determined. The plurality of thermocouples 89 enables testing of the entire process. If the vertical temperature deviates significantly from the expected value, the deviation is due to a thermocouple failure on the surface or other type of process failure.
failure). Therefore, the reliability of the process is improved by the plurality of thermocouples 89.

Although the present invention has been described in the context of some preferred embodiments, still other embodiments fall within the scope of the present invention. For example, mutually different conductive materials other than tantalum and nickel can be used as the first and second conductors 36 and 40. For example,
Rhodium, iron, aluminum, copper, iridium, molybdenum, platinum, titanium, tungsten, gold, chromium, and the like can be used. In addition, alloys and doped metals and other materials can be used. To minimize the complexity of the conversion circuit, it is desirable to use alloys and doped metals having a constant composition along the length. Further, an insulating material other than alumina can be used for the protective layer 68 and the diffusion barrier layer 70 that sufficiently protect the conductors 36 and 40 from contamination or migration from the substrate 28. Examples of such materials include silicon dioxide or silicon nitride. In addition, combinations of these materials can be used.

Although several embodiments of the present invention have been disclosed for convenience of description, various modifications, additions, and substitutions can be made without departing from the scope and spirit of the present invention as defined in the appended claims. Will be understood by those skilled in the art.

[0056]

The semiconductor wafer with a temperature measuring function according to the present invention has a thermocouple formed or arranged on the semiconductor wafer. By having the thermocouple on the surface of the semiconductor wafer, the surface temperature of the wafer can be accurately determined without having to consider the vertical temperature gradient in the semiconductor wafer. Forming thermocouples on the surface of a wafer using semiconductor manufacturing techniques can reduce the mass of thermocouple contacts and associated leads to less than the mass of discrete thermocouples of the prior art. Errors due to loads are also reduced. The method for forming a thermocouple sensor according to the present invention enables the thermal surface profile of a semiconductor wafer to be mapped by forming and arranging a plurality of such thermocouples at various positions on the surface of the semiconductor wafer. Become.

The thermocouple manufactured vertically according to the invention has the two conductors of the thermocouple and the vertical, rather than horizontal, orientation with respect to each other. This has the advantage that the horizontal surface area required for the thermocouple is reduced and more thermocouples can be formed on the wafer surface.

A plurality of vertically stacked thermocouples according to the present invention enable mapping of vertical temperature gradients within a semiconductor wafer. This makes it possible to perform a test of the entire process, and improves the reliability of the process.

[Brief description of the drawings]

FIG. 1 is a partial sectional view showing a thermocouple embedded semiconductor wafer according to the prior art.

FIG. 2 is a perspective view showing a semiconductor wafer with a temperature measuring function having a plurality of thermocouple contacts formed on the surface of the semiconductor wafer.

FIG. 3 is a side view showing a wafer with a thermometer in the semiconductor manufacturing apparatus.

FIG. 4 is an enlarged partial perspective view showing thermocouple contacts on the semiconductor wafer surface shown in FIG. 2;

FIG. 5 is a partial cross-sectional view of the thermocouple formed on the semiconductor wafer, taken along dotted line 62 in FIG.

FIG. 6 is a partial cross-section similar to FIG. 5, showing another embodiment of the invention in which a thermocouple formed on a semiconductor wafer surface has a diffusion barrier layer provided between the thermocouple and the semiconductor substrate. FIG.

FIG. 7 is a partial cross-sectional view taken along dotted line 64 of FIG. 4 showing a termination point where two dissimilar conductive materials are in electrical contact to form a thermocouple contact.

FIG. 8a is a partial cross-sectional view showing steps in a semiconductor shadow masking manufacturing process for forming a thermometer-equipped wafer according to the present invention.

FIG. 8b is a partial cross-sectional view showing steps in a semiconductor shadow masking manufacturing process for forming a thermometer-equipped wafer according to the present invention.

FIG. 8c is a partial cross-sectional view showing steps in a semiconductor shadow masking manufacturing process for forming a thermometer-equipped wafer according to the present invention.

FIG. 8d is a partial cross-sectional view showing steps in a semiconductor shadow masking manufacturing process for forming a thermometer-equipped wafer according to the present invention.

FIG. 8e is a partial cross-sectional view showing steps in a process for manufacturing a semiconductor shadow mask for forming a wafer with a thermometer according to the present invention.

FIG. 8f is a partial cross-sectional view showing a step in a manufacturing process of a semiconductor shadow mask for forming a wafer with a thermometer according to the present invention.

FIG. 8g is a partial cross-sectional view showing a step in a semiconductor shadow masking manufacturing process for forming a thermometer-equipped wafer according to the present invention.

FIG. 8h is a partial cross-sectional view showing steps in a semiconductor shadow masking manufacturing process for forming a thermometer-equipped wafer according to the present invention.

FIG. 9a is a partial cross-sectional view showing a step in a semiconductor photolithography manufacturing process for forming a semiconductor wafer with a temperature measuring function according to the present invention.

FIG. 9b is a partial cross-sectional view showing a step in a semiconductor photolithography manufacturing process for forming a semiconductor wafer with a temperature measurement function according to the present invention.

FIG. 9c is a partial cross-sectional view showing a step in a semiconductor photolithography manufacturing process for forming a semiconductor wafer with a temperature measurement function according to the present invention.

FIG. 9d is a partial cross-sectional view showing a step in a semiconductor photolithography manufacturing process for forming a semiconductor wafer with a temperature measuring function according to the present invention.

FIG. 9e is a partial cross-sectional view showing a step in a semiconductor photolithography manufacturing process for forming a semiconductor wafer with a temperature measurement function according to the present invention.

FIG. 9f is a partial cross-sectional view showing a step in a semiconductor photolithography manufacturing process for forming a semiconductor wafer with a temperature measurement function according to the present invention.

FIG. 9g is a partial cross-sectional view showing a step in a semiconductor photolithography manufacturing process for forming a semiconductor wafer with a temperature measuring function according to the present invention.

9h is a partial cross-sectional view showing a step in a semiconductor photolithography manufacturing process for forming a semiconductor wafer with a temperature measurement function according to the present invention. FIG.

FIG. 9i is a partial cross-sectional view showing a step in a semiconductor photolithography manufacturing process for forming a semiconductor wafer with a temperature measuring function according to the present invention.

FIG. 10 is a partial cross-sectional view showing a thermocouple manufactured vertically on a semiconductor wafer surface.

FIG. 11 is a partial cross-sectional view showing a thermocouple vertically stacked on a semiconductor wafer.

[Explanation of symbols]

 26 Semiconductor wafer with temperature measurement function 28 Semiconductor substrate 30 Wafer surface 32 Thermocouple 34 Thermocouple 36 First conductor 38 First bond pad 40 Second conductor 42 Second bond pad 44 End region 46 Thermocouple Contact 48 Wafer connector fixture 50 Stress relief clamp 52 Wafer connector 54 Thermocouple wiring sheath 56 Wiring 58 Connector 59 Feedthrough 60 Semiconductor manufacturing equipment 66 Insulating layer 68 Protective layer 70 Diffusion barrier layer 72 First mask template 73 First conductive Layer 74 Second mask template 75 Second conductive layer 76 First conductive layer 77 First photoresist 78 Second conductive layer 79 Second photoresist 80 Vertically manufactured thermocouple 82 First Conductor 84 Second insulating layer 86 Second conductor 87 Thermocouple contact 88 The insulating layer 89 vertically plurality of thermocouples are stacked in 90 third conductor 92 fourth conductor 94 third insulating layer

 ──────────────────────────────────────────────────続 き Continuation of the front page (71) Applicant 597136179 5710 Kenosha Street, Richmond, Illinois 60071, U.S.A. S. A. (72) Inventor William C. Shoe United States Wisconsin 53115, Delavan, Matthew Street 218 (72) Inventor David P. Calvertson United States Wisconsin 53104, Bristol, 203 RD Avenue 8222

Claims (24)

[Claims] A semiconductor wafer and a thermocouple contact on a surface of the semiconductor wafer.
nction) and a temperature sensor. 2. The thermocouple contact, comprising: a first conductor formed on the semiconductor wafer; and a second conductor formed on the semiconductor wafer. A conductor is provided away from the first conductor;
The sensor of claim 1, wherein the first and second conductors are dissimilar conductors and electrically contact each other in the overlap region to form a thermocouple contact. 3. The thermocouple contact comprises: a first conductor; a second conductor provided separately from the first conductor;
The sensor of claim 1, comprising: a first conductive member, the first conductive member and the second conductive member electrically contacting each other in the overlap region to form a thermocouple contact. 4. The sensor according to claim 1, further comprising an insulating layer provided between said semiconductor wafer and said thermocouple contact. 5. The sensor according to claim 1, further comprising an electrical connector connected to the thermocouple contact and relaying an electric signal from the thermocouple contact. 6. The semiconductor wafer further comprising a plurality of thermocouple contacts located at various locations on the semiconductor wafer, the plurality of thermocouple contacts operating to provide an electrical indication of the temperature at the various locations. The sensor of claim 1, wherein the sensor is capable of creating a temperature mapping sensor. 7. An insulating layer on the thermocouple contact, and a second thermocouple contact on the insulating layer, thereby forming two vertically stacked thermocouples,
The sensor of claim 1, wherein one of the thermocouples senses a temperature on the surface of the semiconductor wafer and the other thermocouple senses a temperature at a predetermined height from the surface of the semiconductor wafer. 8. A substrate, an insulating layer on the substrate, a first conductor on the insulating layer, and a second conductor provided on the insulating layer and horizontally separated from the first conductor. Wherein the first and second conductors contact each other in the overlap region to form a thermocouple contact on the surface of the wafer, the semiconductor wafer having a temperature measurement function.
r wafer). 9. A plurality of thermocouple contacts at different locations near the surface of the wafer, further comprising a plurality of first and second conductors, each paired with the other, thereby providing a temperature of the wafer. 9. The wafer according to claim 8, wherein mapping is performed. 10. The wafer of claim 8, wherein said first conductor comprises a patterned strip extending from said overlap region to an electrical connector. 11. The semiconductor device further comprises a diffusion barrier layer provided between the insulating layer and the first and second conductors, wherein the diffusion barrier layer is provided on the first and second conductors from the substrate. 9. The wafer of claim 8, wherein the wafer prevents migration of semiconductor material. 12. The method according to claim 12, further comprising a protective layer on the first and second conductors, thereby protecting the first and second conductors from contamination or deterioration.
A wafer according to claim 8. 13. The first conductor is tantalum,
9. The wafer according to claim 8, wherein said second conductor is nickel. 14. The wafer of claim 8, wherein the first and second conductors are dissimilar to each other and include a thermocouple material. 15. The first and second conductors are dissimilar to each other and selected from the group consisting of tantalum, nickel, rhodium, iron, aluminum, copper, iridium, molybdenum, platinum, titanium, tungsten, gold, and chromium. 9. The wafer of claim 8, which is selected. 16. The thermocouple contact further comprising an electrical connector connected to the thermocouple contact, wherein the electrical connector is operable to transmit an electrical signal to / from the thermocouple contact. The wafer according to 1. 17. A method for forming a thermocouple sensor, comprising: forming an insulating layer on a semiconductor substrate; and forming a thermocouple contact on the insulating layer. 18. The method of claim 17, wherein forming an insulating layer on the semiconductor substrate comprises depositing an insulator selected from the group consisting of silicon dioxide, silicon nitride, and alumina. 19. The step of forming a thermocouple contact comprises: depositing a first conductive layer on the insulating layer; and patterning the first conductive layer to form a conductive strip having an end. Forming; forming a second insulating layer on the conductive strip; and patterning the second insulating layer to form the first insulating layer.
Forming a hole in said second insulating layer to reach said end of said conductive strip; and depositing a second conductive layer on said second insulating layer, said second conductive layer comprising: The conductive layer is a conductive material different from the first conductive layer, and the second conductive layer is electrically connected to the first conductive strip through the hole in the second insulating layer. 20. The method of claim 17, comprising: forming a second conductive strip by contacting a thermocouple contact; and patterning the second conductive layer. 20. The step of forming a thermocouple contact includes forming a first conductor on the insulating layer, and forming a second conductor on the insulating layer. , The second conductor is provided horizontally apart from the first conductor, is different from the first conductor, and electrically contacts the first conductor at a termination point. The method of claim 17, wherein 21. The method further comprising forming an insulating layer on the first and second conductors, such that the first and second conductors are electrically isolated from each other except at the termination point. And the first and second
21. The conductor of claim 20, wherein the conductor is protected from contamination or deterioration.
The method described in. 22. The step of forming a thermocouple contact, comprising: forming a first conductive layer and a second conductive layer on the insulating layer; and etching the first and second conductive layers. Forming the first and second patterned conductive strips, wherein the first and second conductive strips are spaced apart from each other and are dissimilar to each other, and a termination point. 18. The method of claim 17, wherein the electrical contacts are made at each other. 23. A semiconductor wafer comprising: a semiconductor wafer; and a plurality of thermocouples formed on the semiconductor wafer and electrically insulated from each other. Forming, and wherein the plurality of thermocouples are operable to sense temperature at a plurality of heights on the semiconductor wafer, thereby obtaining a vertical thermal gradient.
Temperature sensor. 24. A semiconductor wafer, and a first wafer deposited and patterned on the semiconductor wafer.
And an insulating layer formed and patterned on the first conductor, the insulating layer having a hole in the insulating layer over one end of the first conductor, A second conductor deposited and patterned on the insulating layer, the second conductor electrically contacting the first conductor through the hole to form a thermocouple contact; A temperature sensor comprising: