WO2020040339A1 - 금속 마스크 생산 장치 - Google Patents

금속 마스크 생산 장치 Download PDF

Info

Publication number
WO2020040339A1
WO2020040339A1 PCT/KR2018/010045 KR2018010045W WO2020040339A1 WO 2020040339 A1 WO2020040339 A1 WO 2020040339A1 KR 2018010045 W KR2018010045 W KR 2018010045W WO 2020040339 A1 WO2020040339 A1 WO 2020040339A1
Authority
WO
WIPO (PCT)
Prior art keywords
unit
laser beam
workpiece
laser
lens unit
Prior art date
Application number
PCT/KR2018/010045
Other languages
English (en)
French (fr)
Korean (ko)
Inventor
김선주
이진원
이성재
박현우
Original Assignee
주식회사 코윈디에스티
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 코윈디에스티 filed Critical 주식회사 코윈디에스티
Priority to JP2019561751A priority Critical patent/JP6842135B2/ja
Publication of WO2020040339A1 publication Critical patent/WO2020040339A1/ko

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching

Definitions

  • the present invention relates to an apparatus for producing a metal mask for use in depositing an organic light emitting layer on a substrate for an organic light emitting display.
  • organic light emitting diode displays have attracted attention.
  • the organic light emitting diode display has its own light emitting characteristics, and thus, unlike a liquid crystal display device, an organic light emitting diode display does not require a separate backlight and thus may be implemented to be extremely thin.
  • the organic light emitting diode display has high quality characteristics such as low power consumption, high luminance, and high response speed.
  • the organic light emitting diode display includes an organic light emitting layer having a predetermined pattern.
  • an organic light emitting layer is formed through a deposition process using a deposition mask having a fine pattern such as a circle, a square.
  • Deposition masks are generally used as a fine metal mask (FMM) made of metal such as invar or stainless steel.
  • Conventional metal masks have been produced and manufactured through a photolithography process. This includes various steps such as applying and coating a photoresist, heating a photoresist, exposing, developing and the like. In addition, conventional metal masks have been produced and manufactured using laser beams.
  • the conventional apparatus / method has to be repaired by using a separate repair apparatus / method when a defect occurs in the process of forming the mask hole.
  • the optical system used to implement the conventional device / method has a problem that the spot conditions of the laser beam can not be variously changed.
  • the conventional apparatus / method has a problem that it is not possible to effectively clean the dust generated during the processing of mask holes and the like.
  • the conventional apparatus / method has a problem in that it is not possible to check a machining process such as a mask hole in real time.
  • An embodiment of the present invention has been devised to solve the above problems, and further reduces the spot size of the laser beam as compared to the conventional to form a mask hole pattern of a desired size on the metal foil to be processed, and at the same time photolithography the metal mask
  • the present invention aims to provide a metal mask production apparatus that can easily repair defects generated in the process within the same apparatus.
  • the spot shape and the spot pitch can be adjusted together.
  • a laser unit for generating a laser beam
  • a beam shaper unit for changing a spot condition of the laser beam
  • a beam splitter unit for splitting the laser beam into a plurality according to a selection
  • a first condenser lens unit configured to condense the laser beam sequentially passing through the beam shaper unit and the beam splitter unit
  • And a second condensing lens unit condensing the laser beam passing through the first condensing lens unit and irradiating the object to be processed.
  • a mode setting unit including a processing mode for forming a hole pattern in the workpiece and a repair mode for repairing a defect generated in the workpiece.
  • the beam splitter unit may be positioned on an optical path of the laser beam in the processing mode and may deviate from the optical path of the laser beam in the repair mode.
  • Transfer stage And a linear motor unit configured to linearly reciprocate the beam splitter unit on the transfer stage.
  • the spot condition may include a spot size, a spot shape, and a spot pitch between a plurality of laser beams branched through the beam splitter.
  • a suction unit disposed between the second condenser lens unit and the workpiece to discharge dust generated by the workpiece to the outside.
  • the suction unit may include a chamber part in which a through hole through which the laser beam passes is formed; A blow part formed in the chamber part to inject compressed air having a predetermined inclination angle with a passage direction of the laser beam; And a suction unit for sucking dust scattered by the injection of the compressed air.
  • a camera unit formed to have an optical path coaxial with the optical path of the laser beam incident to the second condensing lens unit.
  • a laser half mirror configured to reflect the laser beam passing through the first condenser lens unit between the second condenser lens unit and the camera unit, and to transmit an image of the object to be transmitted to the camera unit.
  • the metal mask production apparatus further reduces the spot size of the laser beam to form a mask hole pattern having a desired size directly on the metal foil, and at the same time produces a metal mask by a photolithography process. Defects can be repaired easily within the same device.
  • the spot size of the laser beam irradiated to the workpiece can be adjusted within the range of 1 ⁇ m to 5 ⁇ m, and the shape of the spot and the spot pitch can also be adjusted together to form various types of mask hole patterns.
  • Dust generated during the use of metal mask production equipment can be cleanly removed by an automated cleaning device, producing a good quality metal mask.
  • FIG. 1 is a schematic diagram of a metal mask production apparatus according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of the metal mask production apparatus of FIG. 1 when operating in repair mode.
  • FIG. 2 is a schematic diagram of the metal mask production apparatus of FIG. 1 when operating in repair mode.
  • FIG. 3 is a diagram illustrating a position of a beam splitter unit according to mode selection
  • FIG. 4 is a view showing a state of a laser beam that varies depending on the rotation of the axis of the beam splitter.
  • FIG. 5 is an exemplary view showing a hole pattern of a metal mask formed by the metal mask production apparatus of FIG. 1.
  • FIG. 6 is a schematic view of a suction unit according to an embodiment of the present invention.
  • FIG. 7 is a plan view of the suction unit of FIG.
  • Figure 8 is a schematic diagram of a metal mask production apparatus, when further comprising a camera unit according to an embodiment of the present invention.
  • FIG. 1 is a schematic diagram of a metal mask production apparatus according to an embodiment of the present invention
  • Figure 2 is a schematic diagram when the metal mask production apparatus of Figure 1 when operating in the repair mode
  • Figure 3 is a beam according to the mode selection
  • FIG. 4 is a view showing the position of the splitter portion
  • FIG. 4 is a view showing the state of the laser beam that varies depending on the rotation of the axis of the beam splitter portion.
  • a metal mask production apparatus includes a laser unit 10, a beam shaper unit 20, a beam splitter unit 30, and a first condenser lens unit 40.
  • the second condenser lens unit 50 may include a mode setting unit (not shown), a suction unit 60, a camera unit 70, and a seating unit 80.
  • the laser unit 10 oscillates a laser beam generated in the form of a pulsed laser from a single source. At this time, the laser beam oscillated through the laser unit 10 is a single dog.
  • the workpiece 200 is made of a metal material such as invar (invar) as described above. Therefore, the laser beam is preferably a picosecond or femtosecond laser beam having a pulse width shorter than the heat diffusion time of the workpiece 200.
  • the beam shaper unit 20 adjusts the shape by changing the spot condition of the laser beam.
  • the beam shaper 20 may not change the spot condition according to the characteristics of the workpiece 200.
  • the spot condition may include a spot size of the laser beam, a spot shape, and a spot pitch between the plurality of laser beams branched through the beam splitter unit 30.
  • the beam shaper unit 20 may include, for example, at least one flat top beam shaper. Therefore, the beam shaper unit 20 may convert the energy profile of the Gaussian beam of the laser beam into the energy profile of the flat top. At this time, the converted laser beam becomes uniform in intensity, its front end surface is flat, and can have a fairly stable distribution even at a long distance. In addition, the beam shaper unit 20 may change the circular laser beam shape irradiated from the laser unit 10 into a rectangular shape having an energy profile of a flat top.
  • the beam shaper 20 may variably adjust a spot pitch that is already fixed according to a lens specification constituting the beam splitter 30 using an optical component within a predetermined range.
  • the beam shaper unit 20 may further include a multifocal lens (not shown) to variably adjust the depth of focus of the laser beam irradiated to the workpiece 200. The adjustment of the depth of focus may be particularly useful when the thickness of the workpiece 200 is changed. This shortens the machining time in the process of forming the mask hole.
  • the beam splitter unit 30 splits a plurality of laser beams according to a selection.
  • the beam splitter unit 30 may include, for example, a diffractive optical element (DOE) lens, and may be configured in various other forms.
  • the DOE lens diverts the laser beam passing through the beam shaper unit 20 so that a plurality of mask holes can be simultaneously processed.
  • the plurality of branched laser beams may have, for example, a specific type of shape such as a straight line arranged in a line and a square type in which the laser beams are arranged in a matrix of m rows and n columns.
  • At least one beam splitter 30 may be disposed, and 1) the number of diverging laser beams, 2) the arrangement shape of the diverging laser beams, 3) the configuration differences due to the diverging laser beams In consideration of the above, any one may be selectively used.
  • the metal mask production apparatus may repair defects existing in the metal mask produced by the conventional photolithography process.
  • the metal mask production apparatus may further include a mode setting unit including a repair mode for repairing defects generated in the workpiece 200 in addition to a machining mode for forming a mask hole pattern in the workpiece 200. Can be.
  • the beam splitter unit 30 is used depends on the mode selection. In addition, whether or not the laser beam is diverged depends on whether the beam splitter unit 30 is positioned on the optical path of the laser beam. In summary, the beam splitter unit 30 is located on the optical path of the laser beam in the processing mode and is operated to deviate on the optical path of the laser beam in the repair mode. As a result, defects occurring in the conventional photolithography process can be repaired simply by changing only the mode setting in the same metal mask production apparatus.
  • this beam splitter 30 is installed in the transfer stage (32).
  • the transfer stage 32 is coupled to the inside of the metal mask production apparatus in the form of a single axis bar.
  • the transfer stage 32 serves to guide the beam splitter unit 30 when it moves.
  • the driving source for transferring the beam splitter unit 30 is a linear motor unit (not shown).
  • the linear motor unit receives power and linearly reciprocates the beam splitter unit 30 on the transfer stage 32.
  • the beam splitter unit 30 is controlled to be positioned (first position) on the optical path of the laser beam.
  • the beam splitter unit 30 is transferred from the first position to the other end (second position) so that the laser beam passes through the beam splitter unit 30 without being passed through.
  • the beam splitter unit 30 may further include a hollow motor unit (not shown) to allow the DOE lens to be axially rotatable. As a result, the plurality of branched laser beams may be rotated within a predetermined angle range.
  • the metal mask production apparatus of the present invention may irradiate the laser beam having a spot size of 1 ⁇ m to 5 ⁇ m to the workpiece 200.
  • the optical system includes a first condensing lens unit 40 and a second condensing lens unit 50 to be described later.
  • the first condenser lens unit 40 and the second condenser lens unit 50 may compress the laser beam to have a high energy density.
  • the first condenser lens unit 40 may be a tube lens
  • the second condenser lens unit 50 may be an objective lens.
  • the first condenser lens unit 40 condenses a laser beam sequentially passing through the beam shaper unit 20 and the beam splitter unit 30.
  • the first condensing lens unit 40 may be changed in appropriate magnification according to the focal length of the second condensing lens unit 50. Can be.
  • the second condenser lens unit 50 condenses the laser beam passing through the first condenser lens unit 40 and irradiates the workpiece 200. That is, the second condenser lens unit 50 adjusts the focus of the laser beam irradiated on the workpiece 200 and focuses it on the workpiece 200.
  • the second condenser lens unit 50 may further include a multi-lens array (not shown) so that the magnification may be differently selected according to the thickness of the workpiece 200, the characteristics of the material, the specification of the mask hole, and the like. have.
  • the second condenser lens unit 50 may change the multi-lens array in a linear or rotary type manner.
  • FIG. 5 is an exemplary view showing a hole pattern of a metal mask formed by the metal mask production apparatus of FIG. 1. Referring to FIG. 5, it can be seen that a fine pattern formed of a mask hole, such as a circle or an octagon, is formed on the metal foil, which is the workpiece 200, by the metal mask production apparatus.
  • a fine pattern formed of a mask hole such as a circle or an octagon
  • FIG. 6 is a schematic view of a suction unit according to an embodiment of the present invention
  • Figure 7 is a plan view of the suction unit of FIG. 6 and 7
  • the metal mask production apparatus may further include a suction unit 60 for cleaning particle-type dust generated by irradiation of a laser beam in a processing mode or a repair mode.
  • the suction unit 60 is disposed between the second condenser lens unit 50 and the workpiece 200, and the suction unit 60 sucks dust generated from the workpiece 200 and discharges it to the outside. .
  • the suction unit 60 includes a chamber part 61, a blow part 62, and a suction part 63.
  • the through hole 61 (a) through which the laser beam passes is formed in the chamber 61 in the vertical direction.
  • the blower 62 includes at least one injection hole 62 (a) for injecting compressed air in a direction in which dust is generated, and a first pipe for moving the compressed air supplied from the outside to the injection hole 62 (a). (62 (b)).
  • the blow part 62 is formed in the chamber part 61, and blows compressed air at a predetermined inclination angle with the passage direction of the laser beam through the above-described injection hole 62 (a).
  • the injection hole 62 (a) is in communication with the inner surface of the through hole 61 (a) is formed to be inclined downward.
  • the suction unit 63 sucks dust scattered by the injection of compressed air.
  • the suction unit 63 may include a suction pipe 63 (a) for sucking the mixed air mixed with dust and a second pipe for moving the mixed air sucked through the suction hole 63 (a) to the outside ( 63 (b)).
  • a plurality of suction holes 63 (a) are spaced apart from the through hole 61 (a) in a concentric manner on the lower surface of the chamber 61. That is, the dust can be removed cleanly by the automated cleaning suction unit 60, it is possible to produce a high quality metal mask.
  • the metal mask production apparatus may further include a camera unit 70.
  • the camera unit 70 includes a CCD camera 71, an image imaging lens 72, an illumination light source 73 and the like.
  • the camera unit 70 reflects the illumination light reflected from the workpiece 200 to the CCD camera 71 through the image imaging lens 72. It is induced to obtain a shooting image.
  • the camera unit 70 may further include an illumination half mirror 74, an auto focus unit (not shown).
  • the illumination half mirror 74 reflects the illumination light and transmits the visible light reflected by the workpiece 200 and transmitted to the CCD camera.
  • the reflection and the transmission ratio may be appropriately changed according to the design change.
  • the autofocus unit corrects the focus of the camera unit 70 so that the camera unit 70 can clearly photograph the workpiece 200.
  • the camera unit 70 is formed to have an optical path coaxial with the optical path of the laser beam incident to the second condensing lens unit 50.
  • the laser beam passing through the first condenser lens unit 40 between the second condenser lens unit 50 and the camera unit 70 is reflected, and the image of the workpiece 200 is transmitted to allow the camera unit ( 70) may further include a laser half mirror 90 for transmitting.
  • the laser half mirror 90 combines the optical axis of the laser beam with the optical axis of the image.
  • the mounting portion 80 allows the workpiece 200 to be produced by the metal mask to be seated.
  • the seating unit 80 may include a flat plate stage and may move in the X and Y axis directions, respectively, to determine a relative position between the workpiece 200 and the second condensing lens unit 50.
  • the seating portion 80 further includes a configuration in which the height is adjusted according to the processing thickness of the workpiece 200. That is, the mounting portion 80 may move in the Z-axis direction. This is because the workpiece 200 can be simultaneously raised and lowered while the workpiece 200 is processed, even when the thickness direction length of the workpiece 200 is longer than the depth of focus of the laser beam. It is possible to form a mask hole in the 200).
  • the metal mask production apparatus may further include a scanner unit 100.
  • the scanner unit 100 may change the absolute position (X-Y coordinate) of the laser beam irradiated to the workpiece 200.
  • a scanner unit 100 may be, for example, a galvanometer scanner.
  • the galvanometer scanner may include a scanner mirror (not shown) which is coupled to a driving motor and a rotation axis of the driving motor to adjust the irradiation position of the laser beam.
  • the driving motor can be finely adjusted to precisely move the spot position of the laser beam.
  • the scanner mirror reflects the laser beam inside the scanner unit 100.
  • the metal mask production apparatus may further include an attenuator 110 and at least one laser mirror 120 reflecting the laser beam.
  • the attenuator 110 is disposed on the movement path of the laser beam to adjust the output of the laser beam oscillated by the laser unit 10.
  • the laser mirror 120 reflects the laser beam to guide the traveling direction of the laser beam.
  • the number, position and type of the laser mirror 120 is not limited to the illustrated embodiment.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Laser Beam Processing (AREA)
PCT/KR2018/010045 2018-08-22 2018-08-30 금속 마스크 생산 장치 WO2020040339A1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2019561751A JP6842135B2 (ja) 2018-08-22 2018-08-30 金属マスク生産装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020180098023A KR102100361B1 (ko) 2018-08-22 2018-08-22 금속 마스크 생산 장치
KR10-2018-0098023 2018-08-22

Publications (1)

Publication Number Publication Date
WO2020040339A1 true WO2020040339A1 (ko) 2020-02-27

Family

ID=69582231

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2018/010045 WO2020040339A1 (ko) 2018-08-22 2018-08-30 금속 마스크 생산 장치

Country Status (4)

Country Link
JP (1) JP6842135B2 (zh)
KR (1) KR102100361B1 (zh)
TW (1) TWI678724B (zh)
WO (1) WO2020040339A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113500313A (zh) * 2021-06-23 2021-10-15 济南森峰科技有限公司 一种z轴动态移动的激光高速错位打孔方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI744135B (zh) * 2020-12-15 2021-10-21 鈦昇科技股份有限公司 貫通孔的多焦點雷射形成方法
KR102495826B1 (ko) * 2022-04-11 2023-02-06 에이피에스머티리얼즈(주) 멀티 레이어 레이저 조사 기반의 마스크 제조 방법
WO2024117178A1 (ja) * 2022-11-29 2024-06-06 古河電気工業株式会社 可搬型レーザ表面処理装置およびレーザ表面処理システム

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100879007B1 (ko) * 2008-02-21 2009-01-15 주식회사 코윈디에스티 기판의 광학검사기능을 구비한 리페어장치
KR20100057266A (ko) * 2008-11-21 2010-05-31 엘지디스플레이 주식회사 리페어 기능을 갖는 쉐도우 마스크 검사장치 및 이를 이용한 검사 방법
KR101176475B1 (ko) * 2011-06-23 2012-08-28 주식회사 코윈디에스티 유기전계발광소자용 리페어장치의 광학계
KR101582175B1 (ko) * 2015-03-17 2016-01-05 에이피시스템 주식회사 레이저 패터닝을 이용한 섀도우 마스크의 제조 장치 및 레이저 패터닝을 이용한 섀도우 마스크의 제조 방법
KR101882232B1 (ko) * 2017-12-06 2018-07-26 주식회사 제이스텍 레이져와 에어흡입공 겸용 레이져가공 스캐너 헤드

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2968080B2 (ja) * 1991-04-30 1999-10-25 ジェイエスアール株式会社 高分解能光学顕微鏡および照射スポット光作成用マスク
DE112006001394B4 (de) * 2005-06-01 2010-04-08 Phoeton Corp., Atsugi Laserbearbeitungsvorrichtung und Laserbearbeitungsverfahren
KR20100107253A (ko) * 2009-03-25 2010-10-05 삼성모바일디스플레이주식회사 기판 절단 장치 및 이를 이용한 기판 절단 방법
KR101267220B1 (ko) 2011-10-06 2013-05-24 주식회사 엘티에스 레이저를 이용한 마스크 제조방법
KR20150035131A (ko) 2013-09-27 2015-04-06 삼성디스플레이 주식회사 금속 마스크, 금속 마스크 제조 장치, 및 금속 마스크 제조 방법
KR101582161B1 (ko) 2014-12-17 2016-01-05 에이피시스템 주식회사 레이저를 이용한 3차원 패터닝 방법
CN107092166B (zh) * 2016-02-18 2019-01-29 上海微电子装备（集团）股份有限公司 曝光系统、曝光装置及曝光方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100879007B1 (ko) * 2008-02-21 2009-01-15 주식회사 코윈디에스티 기판의 광학검사기능을 구비한 리페어장치
KR20100057266A (ko) * 2008-11-21 2010-05-31 엘지디스플레이 주식회사 리페어 기능을 갖는 쉐도우 마스크 검사장치 및 이를 이용한 검사 방법
KR101176475B1 (ko) * 2011-06-23 2012-08-28 주식회사 코윈디에스티 유기전계발광소자용 리페어장치의 광학계
KR101582175B1 (ko) * 2015-03-17 2016-01-05 에이피시스템 주식회사 레이저 패터닝을 이용한 섀도우 마스크의 제조 장치 및 레이저 패터닝을 이용한 섀도우 마스크의 제조 방법
KR101882232B1 (ko) * 2017-12-06 2018-07-26 주식회사 제이스텍 레이져와 에어흡입공 겸용 레이져가공 스캐너 헤드

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113500313A (zh) * 2021-06-23 2021-10-15 济南森峰科技有限公司 一种z轴动态移动的激光高速错位打孔方法

Also Published As

Publication number Publication date
JP2020533173A (ja) 2020-11-19
KR102100361B1 (ko) 2020-04-13
KR20200022189A (ko) 2020-03-03
JP6842135B2 (ja) 2021-03-17
TWI678724B (zh) 2019-12-01
TW202009977A (zh) 2020-03-01

Similar Documents

Publication Publication Date Title
WO2020040339A1 (ko) 금속 마스크 생산 장치
KR100381943B1 (ko) 재료가공장치
US4500204A (en) Scanning-type lithographic and image-pickup device using optical fiber
US6818858B2 (en) Laser processing unit and processing apparatus comprising laser processing unit
WO2016148380A1 (ko) 레이저 패터닝을 이용한 섀도우 마스크의 제조 장치 및 레이저 패터닝을 이용한 섀도우 마스크의 제조 방법
CN103858208A (zh) 曝光装置用的对准装置以及对准标记
WO2006100780A1 (ja) リペア方法及びその装置
EP1116932A2 (de) Messgerät und Verfahren zun Vermessen von Strukturen auf einem Substrat
CN101266409A (zh) 激光加工装置
CN113126449B (zh) 一种用于绿油光刻的激光直写光刻系统及方法
JP2003255552A (ja) レーザ照射装置並びに走査レーザ光を用いた露光方法及び走査レーザ光を用いたカラーフィルタの製造方法
JP3643572B2 (ja) 投影露光装置及び位置合わせ装置
EP3204825B1 (de) Optisches system zur lithografischen strukturerzeugung
WO2012148117A2 (ko) 레이저 분할빔을 이용한 선택적 박막 제거장치
JP3048168B2 (ja) 表面状態検査装置及びこれを備える露光装置
JP7491778B2 (ja) 走査型縮小投影光学系及びこれを用いたレーザ加工装置
KR20130098838A (ko) 레이저 가공 장치, 레이저 가공 방법 및 레이저 가공 프로그램을 기록한 컴퓨터가 판독 가능한 기록 매체
CN113284989A (zh) 一种Micro LED芯片剥离装置、剥离机及剥离机使用方法
KR20130113356A (ko) 포토마스크 및 그것을 사용하는 레이저 어닐링 장치 및 노광 장치
JP7382453B2 (ja) 不良箇所の除去方法
KR20120092990A (ko) 레이저 마킹 시스템의 마킹 이미지 리딩장치 및 리딩방법
WO2022229164A2 (de) Verfahren und system zur herstellung mikrostrukturierter komponenten
CN215008252U (zh) 一种Micro LED芯片剥离装置及剥离机
KR100931712B1 (ko) 레이저 빔 노광장치 및 그 방법
WO2020036250A1 (ko) 레이저 가공 장치

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2019561751

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18930994

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18930994

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 13/10/2021)

122 Ep: pct application non-entry in european phase

Ref document number: 18930994

Country of ref document: EP

Kind code of ref document: A1