WO2020024472A1 - 阵列面板的检测修复方法和光阻修补装置 - Google Patents

阵列面板的检测修复方法和光阻修补装置 Download PDF

Info

Publication number
WO2020024472A1
WO2020024472A1 PCT/CN2018/113793 CN2018113793W WO2020024472A1 WO 2020024472 A1 WO2020024472 A1 WO 2020024472A1 CN 2018113793 W CN2018113793 W CN 2018113793W WO 2020024472 A1 WO2020024472 A1 WO 2020024472A1
Authority
WO
WIPO (PCT)
Prior art keywords
photoresist
metal line
line pattern
abnormal
information
Prior art date
Application number
PCT/CN2018/113793
Other languages
English (en)
French (fr)
Inventor
唐洪
Original Assignee
惠科股份有限公司
重庆惠科金渝光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 惠科股份有限公司, 重庆惠科金渝光电科技有限公司 filed Critical 惠科股份有限公司
Publication of WO2020024472A1 publication Critical patent/WO2020024472A1/zh

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Definitions

  • the present application relates to the field of display screen manufacturing, and in particular, to a method for detecting and repairing an array panel and a photoresist repair device.
  • the pixel control device (such as a thin film transistor) in an array panel (such as a TFT array panel) needs to form a metal line during the manufacturing process.
  • the metal line includes a gate line and a data line.
  • the photoresist When the photoresist has abnormal conditions such as broken lines or perforations, it will usually deal with photoresistance rework, or repair the metal lines caused by abnormal conditions such as light blocking lines or perforations by laser chemical vapor deposition after the metal lines are formed. line.
  • the photoresist trade union wastes costs and increases the complexity of production, and the metal electrical impedance generated by laser chemical vapor deposition is relatively high. Therefore, when it is found that the disconnection generated by the process is relatively long, the method of laser chemical vapor deposition cannot be used. Repairing can only be scrapped, increasing costs.
  • a method for detecting and repairing an array panel and a photoresist repair device are provided.
  • An inspection and repair method for an array panel includes:
  • the metal layer is etched to form a metal line.
  • a photoresist repair device includes:
  • a control module configured to obtain information about an abnormal condition of the photoresist corresponding to the metal line pattern after the photoresist layer is developed to form a metal line pattern, and control the processing module according to the abnormal condition information output Control instructions for operations;
  • a processing module configured to repair the abnormal situation according to the control instruction.
  • An inspection and repair method for an array panel includes:
  • the abnormal situation information includes position information and size information of the abnormal situation
  • the photoresist repair device repairs the abnormal condition according to the information of the abnormal condition; etching the metal layer to form a metal line.
  • FIG. 1 is a flowchart of a method for detecting and repairing an array panel according to an embodiment
  • FIG. 2 is a schematic diagram of a manufacturing process of a pixel control device according to an embodiment
  • FIG. 3 is a schematic diagram of a process of manufacturing a pixel control device in another embodiment
  • FIG. 4 is a flowchart of a method for detecting and repairing an array panel in another embodiment
  • FIG. 5 is a structural block diagram of a photoresist repair device according to an embodiment.
  • FIG. 1 is a flowchart of a method for detecting and repairing an array panel according to an embodiment.
  • the pixel control device is, for example, a thin film transistor (TFT, Thin Film Transistor).
  • the array panel is, for example, a TFT array panel.
  • the method for detecting and repairing an array panel includes:
  • step S101 a substrate is provided.
  • the substrate is, for example, a glass substrate.
  • step S102 a metal layer is deposited on the substrate.
  • step S103 a photoresist is coated on the metal layer and developed to form a metal line pattern.
  • the metal lines include, for example, gate lines and data lines.
  • a metal layer 11 is deposited on a glass substrate 10
  • a photoresist is coated on the metal layer 11 to form a photoresist layer
  • a mask plate is provided on the photoresist layer to block the metal lines.
  • the photoresist corresponding to the pattern is exposed to the photoresist layer, and the photoresist of the exposed portion is washed away with a developer, and developed to form a metal line pattern 12.
  • the material of the metal layer 11 is aluminum (or copper) and molybdenum.
  • step S104 it is detected whether the photoresistor corresponding to the metal line pattern is abnormal, and if so, the abnormal condition is repaired.
  • the metal layer not covered by the photoresist needs to be etched away, and the metal layer covered by the metal line pattern is retained to form a metal line.
  • the photoresist corresponding to the metal line pattern 12 has abnormal conditions (such as abnormal perforations 20, gaps 21, and notches 22 corresponding to the photoresist corresponding to the metal line pattern)
  • it will etch away the metal layer 11 that is not covered by the photoresist at the abnormal situation, which will cause the metal line to be abnormal.
  • the gate line is disconnected, which will cause the gate line to lose its proper function and the display screen will be invalid.
  • the metal line pattern 12 is repaired in time.
  • the step of repairing the abnormal situation is: using a photoresist to repair the abnormal situation.
  • the photoresist can be used to fill the perforation 20, repair the gap 21, repair the gap 22, and so on.
  • step S105 the metal layer is etched to form a metal line.
  • the metal line pattern After the abnormal condition on the metal line pattern is repaired, the metal line pattern can be guaranteed to be intact. In this case, the metal layer not covered by the photoresist is etched, the metal layer covered by the metal line pattern is retained, and finally a complete metal line can be formed.
  • a metal layer is deposited on a substrate, a photoresist is coated on the metal layer, and a metal line pattern is developed to develop a metal line pattern. If an abnormal condition of the metal line pattern is detected, it is timely Repair, thus eliminating the need for photoresistance rework and avoiding metal wire breaks. At the same time, there is no need to repair the disconnection after the metal layer is formed by etching the metal layer, the process is simple, and the manufacturing cost is saved.
  • the manufacturing process of the TFT-LCD includes the manufacturing process of the TFT array and CF (color filter).
  • CF color filter
  • Step a deposit Si3N4 (silicon nitride), a-Si (amorphous silicon), N + a-si (N-type silicon): first use PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition method) The technology applies a layer of Si3N4, N + a-si and a-Si respectively, and then applies a photoresist on N + a-si and a-Si to form the desired shape through exposure, development, etching, and stripping. . After the development is completed, the method of step S104 can be used to check whether the photoresist is abnormal, and if so, repair the abnormal condition.
  • PECVD Plasma enhanced chemical vapor deposition method
  • Step b forming a source line and a drain line.
  • a layer of metal material is coated on the a-Si as source and drain lines, and then a photoresist is coated on the metal material and formed into a desired shape through exposure, development, etching, and stripping.
  • the method of step S104 can be used to check whether the photoresist is abnormal, and if so, repair the abnormal condition.
  • Step c precipitating Si3N4 and ITO (Indium tin oxide): firstly deposit a layer of Si3N4 by PECVD technology, and then coat a layer of ITO.
  • Si3N4 and ITO Indium tin oxide
  • Methods for forming the colored portion of the color filter include a dye method, a pigment dispersion method, a printing method, an electrolytic deposition method, and an inkjet method.
  • the first step of the pigment dispersion method is to disperse fine particles (average particle size of less than 0.1 ⁇ m) (R, G, and B) with uniform particles in a transparent photosensitive resin. Then they are applied in order to form R.G.B three-color patterns by coating, exposure, and development processes.
  • the equipment used is mainly coating, exposure, and development equipment.
  • a black matrix is generally added at the junction of the three RGB colors.
  • a single-layer metal chromium film is formed by a sputtering method; or a BM film of a metal chromium and chromium oxide composite type or a resin-type BM mixed with a carbon resin.
  • a protective film and an IT0 electrode need to be formed on the BM. Since the substrate with the color filter (that is, the CF substrate) is used as the front substrate of the liquid crystal panel and the rear substrate with the TFT (that is, the TFT substrate) The liquid crystal cell is formed together, so it is necessary to pay attention to the positioning problem so that each unit of the color filter corresponds to each pixel of the TFT substrate.
  • a polyimide film is coated on the surface of the CF substrate and the TFT substrate, respectively, and an alignment film capable of inducing molecules to be arranged as required is formed by a rubbing process.
  • a sealant material is laid around the TFT substrate, and a gasket is sprayed on the TFT substrate.
  • silver paste was applied to the ends of the transparent electrodes of the CF substrate.
  • the two substrates are bonded to each other so that the CF pattern and the TFT pixel pattern are one-to-one positive, and then the sealing material is cured by heat treatment.
  • the sealing material it is necessary to leave an injection port so that the liquid crystal can be filled by vacuum.
  • a peripheral driving circuit needs to be installed on the panel, and then a polarizing plate is pasted on the surfaces of the two substrates. If it is a transmissive LCD, you must also install a backlight.
  • FIG. 4 is a flowchart of a method for detecting and repairing an array panel in another embodiment.
  • the method for detecting and repairing the array panel includes:
  • step S201 a substrate is provided.
  • step S202 a metal layer is deposited on the substrate.
  • step S203 a photoresist is coated on the metal layer to form a photoresist layer.
  • step S204 a mask plate is provided on the photoresist layer to block the photoresist corresponding to the metal line pattern.
  • step S205 the photoresist layer is exposed, and the photoresist of the exposed portion is washed away with a developer, and developed to form a metal line pattern.
  • the specific implementation of the step of coating a photoresist on a metal layer and developing a metal line pattern is not limited to the above, as long as it can be developed to form a metal line pattern.
  • step S206 the detection device is used to detect whether there is any abnormality in the photoresist corresponding to the metal line pattern. If yes, go to step S207; if no, go to step S209.
  • the detection device is, for example, an optical microscope. After developing and forming the metal line pattern, an optical microscope is used to detect whether there is an abnormal condition on the metal line pattern.
  • the optical microscope can enlarge and image the minute abnormal condition and obtain the information of the abnormal condition.
  • step S207 the abnormal situation information is acquired and sent to the photoresist repair device.
  • the abnormal condition information includes, for example, one or two or more of position information, size information, and depth information of the abnormal condition.
  • the position information includes, for example, position coordinates of the abnormal situation on the glass substrate.
  • the size information includes, for example, the outline size of the abnormal situation.
  • step S208 the photoresist repair device repairs the abnormal situation according to the abnormal situation information.
  • the photoresist repair device includes, for example, a control module and a processing module.
  • the control module is configured to obtain information about an abnormal situation and output control instructions for controlling the operation of the processing module according to the information about the abnormal situation.
  • the processing module is configured to repair an abnormal situation according to the control instruction.
  • the processing module can be flexibly moved, for example, it can perform rotation and horizontal movement, and has a nozzle for spraying the photoresist, so as to repair the abnormal situation of the photoresist at any position.
  • the processing module may, for example, use a conventional robotic arm in combination with a conventional glue application device to repair abnormal conditions.
  • the processing module controls the nozzles of the processing module to spray the photoresist on the abnormal situation according to the position information and size information of the abnormal situation, and the processing module controls the total amount of the photoresist sprayed by the nozzle on each position according to the depth information of the abnormal situation.
  • the control module can control the total amount of photoresistance sprayed by the printhead at each position by controlling the time of the photoresistance sprayed by the printhead).
  • the repaired photoresist can also be baked (for example, baking under the same conditions as in the traditional photolithography process before baking) to avoid the gas pollution detection device emitted by the photoresist.
  • the lens improves the accuracy of detecting abnormal conditions from the detection device.
  • detecting the photoresist corresponding to the metal line pattern is abnormal. If so, the specific implementation of the step of using the photoresist to repair the abnormal condition is not limited to the above case, as long as the corresponding line pattern can be detected. When the abnormal condition of the photoresist appears, repair the abnormal condition.
  • step S209 the metal layer not covered by the photoresist is etched away, and the metal layer covered by the metal line pattern is retained to form a metal line.
  • a metal layer is deposited on a substrate, a photoresist is coated on the metal layer, and a metal line pattern is developed to detect whether there is an abnormal condition of the metal line pattern through a detection device, and information on the abnormal condition is obtained.
  • the information of the abnormal situation is sent to the photoresist repair device, and the abnormal situation is repaired by the photoresist repair device in time, so that the photoresist rework is not needed, and the metal wire is not broken.
  • there is no need to repair the disconnection after the metal layer is formed by etching the metal layer the process is simple, and the manufacturing cost is saved.
  • the present application also proposes a photoresist repair device, which can repair abnormal conditions such as light-blocking lines or perforations that occur during the fabrication of thin-film transistors in an array panel.
  • the array panel is, for example, a TFT array panel.
  • the photoresist repair device includes a control module 100 and a processing module 200.
  • the control module 100 is configured to obtain the light corresponding to the metal line pattern after the photoresist layer is developed to form the metal line pattern.
  • Information of the abnormal situation includes, for example, one or two or more of position information, size information, depth information of the abnormal situation
  • the control module 100 is, for example, a PLC (Programmable Logic Contro).
  • the processing module 200 is configured to repair an abnormal situation according to the control instruction. Further, the processing module 200 of the photoresist repair device can be flexibly moved, for example, it can perform rotation and horizontal movement, and is provided with a nozzle for ejecting the photoresist, so as to repair the abnormal situation of the photoresist at any position. Specifically, the processing module 200 may, for example, use a conventional robotic arm in combination with a conventional glue application device to repair an abnormal situation.
  • the processing module 200 controls the nozzles of the processing module 200 to spray the photoresist on the abnormal situation according to the position information and size information of the abnormal situation, and the processing module 200 controls the total amount of the photoresist sprayed by the nozzle on each position according to the depth information of the abnormal situation (for example : If the amount of photoresistance sprayed by the printhead per unit time is the same, the control module 100 can control the total amount of photoresistance sprayed by the printhead at each position by controlling the time of photoshoot sprayed by the printhead.
  • the photoresist repair device further includes the optical microscope 300 described above.
  • the optical microscope 300 is used to detect whether there is an abnormality in the photoresist corresponding to the metal line pattern, and if so, obtain the information of the abnormality and send it to the control module 100.
  • the control module 100 obtains the information of the abnormality, and The abnormal situation information generates corresponding instructions to control the processing module 200 to accurately repair the abnormal situation, avoid metal wire disconnection, the process is simple, and the production cost is saved.
  • the functions that can be implemented by the photoresist repair device provided in this embodiment correspond to the principles of photoresist detection and repair in the method for detecting and repairing an array panel provided in the above embodiments, and are not repeated here.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

一种阵列面板的检测修复方法,包括在基板(10)上沉积金属层(11);在金属层(11)上涂覆光阻,并显影形成金属线图形(12);检测金属线图形(12)对应的光阻是否有异常情况,若有,对异常情况进行修复。

Description

阵列面板的检测修复方法和光阻修补装置 技术领域
本申请涉及显示屏制作领域,特别是涉及一种阵列面板的检测修复方法和光阻修补装置。
背景技术
阵列面板(例如TFT阵列面板)中的像素控制器件(例如薄膜晶体管)在制作的过程中需要形成金属线,该金属线包括栅极线和数据线,在光刻形成金属线的过程中若检测到光阻有断线或穿孔等异常情况,通常会处理光阻重工,或者在金属线形成之后,通过激光化学气相沉积的方式修补因光阻断线或穿孔等异常情况而导致的金属线断线。
但是,光阻重工会浪费成本,加大制作的复杂度,而激光化学气相沉积产生的金属电阻抗比较高,所以当发现制程所产生的断线比较长时,无法利用激光化学气相沉积的方式修补,只能报废,增加了成本。
发明内容
根据本申请的各种实施例提供一种阵列面板的检测修复方法和光阻修补装置。
一种阵列面板的检测修复方法,包括:
提供一基板;
在所述基板上沉积金属层;
在所述金属层上涂覆光阻,并显影形成金属线图形;
检测所述金属线图形对应的光阻是否有异常情况,若有,对所述异常情况进行修复;
刻蚀所述金属层形成金属线。
一种光阻修补装置,所述光阻修补装置包括:
控制模块,所述控制模块设置为在光阻层显影形成金属线图形后,获取所述金属线图形对应的光阻的异常情况的信息,并根据所述异常情况的信息输出控制所述处理模块操作的控制指令;及
处理模块,所述处理模块设置为根据所述控制指令修复所述异常情况。
一种阵列面板的检测修复方法,包括:
提供一基板;
在所述基板上沉积金属层;
在所述金属层上涂覆光阻,并显影形成金属线图形;
通过检测装置检测所述金属线图形对应的光阻是否有异常情况,若有,获取所述异常情况的信息,并发送至光阻修补装置;
其中,所述异常情况的信息包括所述异常情况的位置信息和尺寸信息;
所述光阻修补装置根据所述异常情况的信息对所述异常情况进行修复;刻蚀所述金属层形成金属线。
本申请的一个或多个实施例的细节在下面的附图和描述中提出。本申请的其它特征、目的和优点将从说明书、附图以及权利要求书变得明显。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面 描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他实施例的附图。
图1为一实施例中阵列面板的检测修复方法的流程图;
图2为一实施例中像素控制器件制作过程的工序示意图;
图3为另一实施例中像素控制器件制作过程的工序示意图;
图4为另一实施例中阵列面板的检测修复方法的流程图;
图5为一实施例的光阻修补装置的结构框图。
具体实施方式
参见图1,图1为一实施例中阵列面板的检测修复方法的流程图。其中,像素控制器件例如为薄膜晶体管(TFT,Thin Film Transistor)。阵列面板例如为TFT阵列面板等。
在本实施例中,该阵列面板的检测修复方法,包括:
步骤S101,提供一基板。
具体地,基板例如为玻璃基板。
步骤S102,在基板上沉积金属层。
步骤S103,在金属层上涂覆光阻,并显影形成金属线图形。
金属线例如包括栅极线和数据线。在形成金属线的过程中,参见图2,在玻璃基板10上沉积金属层11,在金属层11上涂覆光阻,形成光阻层,在光阻层上设置掩膜版,遮挡金属线图形对应的光阻,对光阻层曝光,用显影剂将曝光部分的光阻清洗掉,显影形成金属线图形12。其中,金属层11的材质为铝(或铜)和钼。
步骤S104,检测金属线图形对应的光阻是否有异常情况,若有,对异常 情况进行修复。
在显影形成金属线图形之后,需要将未被光阻覆盖的金属层刻蚀掉,保留金属线图形覆盖的金属层,形成金属线。参见图3,若金属线图形12对应的光阻有异常情况(异常情况例如包括所述金属线图形对应的光阻异常的穿孔20、缝隙21和缺口22),在刻蚀的过程中,则会把异常情况处未被光阻覆盖的金属层11刻蚀掉,造成金属线异常,如栅极线断线,导致栅极线失去其应有的功能,显示屏作废,因此需要避免这种情况。本实施例中,为了避免出现上述情况,在检测到金属线图形12存在异常情况之后,及时将其修复。
具体地,对异常情况进行修复的步骤为:利用光阻对异常情况进行修复。例如:可以用光阻填补穿孔20,修补缝隙21,将缺口22修补完整等。
步骤S105,刻蚀金属层形成金属线。
将金属线图形上的异常情况修复之后,从而可以保证金属线图形是完整无缺的。在这种情况下,对未被光阻覆盖的金属层进行刻蚀,保留金属线图形覆盖的金属层,进而最终能够形成完整的金属线。
本实施例提供的上述阵列面板的检测修复方法,在基板上沉积金属层,在金属层上涂覆光阻,并显影形成金属线图形,之后若检测到金属线图形有异常情况则及时将其修补,从而无需光阻重工,避免金属线断线。同时也无需在刻蚀金属层形成金属线之后进行断线修补,工艺简单,节约了制作成本。
具体地,如果阵列面板为TFT-LCD(thin film transistor-liquid crystal display,薄膜晶体管液晶显示器),则TFT-LCD的制造工艺包括:TFT阵列的制造工艺、CF(color filter,彩色滤光片)基板的制造工艺、液晶盒的制造工艺、外围电路、组装背光源等的模块组装工艺。
(一)TFT阵列的制造工艺
TFT阵列的制造工艺中关于栅极线的制造工序可以采用上述步骤S101至步骤S105。栅极线制造完成后,在TFT阵列的制造工艺中还将继续执行以下各步骤:
步骤a,沉积Si3N4(氮化硅)、a-Si(非晶硅)、N+a-si(N型硅):首先利用PECVD(Plasma Enhanced Chemical Vapor Deposition,等离子体增强化学的气相沉积法)技术分别涂布一层Si3N4、N+a-si和a-Si,然后在N+a-si和a-Si上涂布光阻胶,通过曝光、显影、蚀刻、除胶而形成所需形状。其中,在显影完成后,同样可以按照上述步骤S104的方法检查光阻是否有异常情况,若有,对异常情况进行修复。
步骤b,形成源极线、漏极线。首先在a-Si上涂布一层金属材料作为源极线和漏极线,然后在金属材料上涂布光阻胶并通过曝光、显影、蚀刻和除胶而形成所需形状。其中,在显影完成后,同样可以按照上述步骤S104的方法检查光阻是否有异常情况,若有,对异常情况进行修复。
步骤c,沉淀Si3N4和ITO(Indium tin oxide,氧化铟锡):首先利用PECVD技术沉淀一层Si3N4,然后再涂布一层ITO。
至此,整个TFT基板制造完成。
(二)CF(color filter,彩色滤光片)基板的制造工艺
彩色滤光片着色部分的形成方法有染料法、颜料分散法、印刷法、电解沉积法、喷墨法。
其中,颜料分散法的第一步是将颗粒均匀的微细颜料(平均粒径小于0.1μm)(R、G、B三色)分散在透明感光树脂中。然后将它们依次用涂敷、曝光、显影工艺方法,依次形成R.G.B三色图案。在制造中使用光蚀刻技术,所用装置主要是涂敷、曝光、显影装置。
为了防止漏光,在RGB三色交界处一般都要加黑矩阵(BM)。例如用溅射法形成单层金属铬膜;或者用金属铬和氧化铬复合型的BM膜或树脂混合碳的树脂型BM。
此外,还需要在BM上制作一层保护膜及形成IT0电极,由于带有彩色滤光片的基板(即CF基板)是作为液晶屏的前基板与带有TFT的后基板(即TFT基板)一起构成液晶盒,所以必须关注好定位问题,使彩色滤光片的各单元与TFT基板各像素相对应。
(三)液晶盒的制造工艺
首先在CF基板、TFT基板表面分别涂敷聚酰亚胺膜并通过摩擦工艺,形成可诱导分子按要求排列的取向膜。之后在TFT基板周边布好密封胶材料,并在TFT基板上喷洒衬垫。同时在CF基板的透明电极末端涂布银浆。然后将两块基板对位粘接,使CF图案与TFT像素图案一一对正,再经热处理使密封材料固化。在印刷密封材料时,需留下注入口,以便抽真空灌注液晶。
(四)外围电路、组装背光源等的模块组装工艺
在液晶盒制作工艺完成后,在面板上需要安装外围驱动电路,再在两块基板表面贴上偏振片。如果是透射型LCD.还要安装背光源。
参见图4,图4为另一实施例中阵列面板的检测修复方法的流程图。
在本实施例中,该阵列面板的检测修复方法包括:
步骤S201,提供一基板。
步骤S202,在基板上沉积金属层。
步骤S203,在金属层上涂覆光阻,形成光阻层。
步骤S204,在光阻层上设置掩膜版,遮挡金属线图形对应的光阻。
步骤S205,对光阻层曝光,用显影剂将曝光部分的光阻清洗掉,显影形 成金属线图形。
可以理解的是,在金属层上涂覆光阻,并显影形成金属线图形这一步骤的具体实现方式不限于上述情况,只要能够显影形成金属线图形即可。
步骤S206,通过检测装置检测金属线图形对应的光阻是否有异常情况,若有进入步骤S207,若否,进入步骤S209。
其中,检测装置例如光学显微镜。在显影形成金属线图形之后,通过光学显微镜检测该金属线图形上是否有异常情况,光学显微镜可以将微小的异常情况放大成像,并获取异常情况的信息。
步骤S207,获取异常情况的信息,并发送至光阻修补装置。
其中,异常情况的信息例如包括异常情况的位置信息、尺寸信息、深度信息中一种或两种以上。其中,位置信息例如包括异常情况在玻璃基板上的位置坐标。尺寸信息例如包括异常情况的轮廓尺寸。
步骤S208,光阻修补装置根据异常情况的信息修补异常情况。
该步骤中,光阻修补装置例如包括控制模块和处理模块,该控制模块用于获取异常情况的信息,并根据该异常情况的信息输出控制处理模块操作的控制指令。处理模块用于根据该控制指令修复异常情况。其中,处理模块可灵活运动,例如可以进行转动和水平运动,并且具备用于喷射光阻的喷头,以实现对任意位置的光阻的异常情况进行修补。具体地,处理模块例如可以利用传统的机械臂结合传统的涂胶设备来对异常情况进行修补。
在该步骤中,处理模块根据异常情况的位置信息、尺寸信息控制处理模块的喷头对异常情况喷射光阻,并且处理模块根据异常情况的深度信息控制喷头在每个位置喷射的光阻的总量(例如:若喷头单位时间内喷射的光阻的量相同,则控制模块通过控制喷头喷射光阻的时间即可控制喷头对每个位置 喷射的光阻的总量)。
进一步地,在对异常情况修复完成后,还可以对修复的光阻进行烘烤(例如采用与传统光刻工艺中前烘相同的条件进行烘烤),以避免光阻散发的气体污染检测装置的透镜,从提高检测装置检测异常情况的精确度。
可以理解的是,检测金属线图形对应的光阻是否有异常情况,若有,利用光阻对异常情况进行修复这一步骤的具体实现方式不限于上述情况,只要能够在检测到金属线图形对应的光阻出现异常情况时对异常情况进行修复即可。
步骤S209,将未被光阻覆盖的金属层刻蚀掉,保留金属线图形覆盖的金属层,形成金属线。
将光阻异常情况的信息(例如位置信息和尺寸信息)发送至光阻修补装置,由光阻修补装置根据该异常情况的信息对光阻的异常情况进行修补,进而形成完整的金属线图形,避免在光刻形成金属线的过程中产生金属线断线。
上述阵列面板的检测修复方法,在基板上沉积金属层,在金属层上涂覆光阻,并显影形成金属线图形,通过检测装置检测金属线图形是否有异常情况,并获取异常情况的信息,将该异常情况的信息发送给光阻修补装置,由光阻修补装置将该异常情况及时修补,从而无需光阻重工,避免金属线断线。同时也无需在刻蚀金属层形成金属线之后进行断线修补,工艺简单,节约了制作成本。
本申请还提出一种光阻修补装置,可以对阵列面板中薄膜晶体管制作过程中出现的光阻断线或穿孔等异常情况进行修复。其中,阵列面板例如为TFT阵列面板等。
在其中一个实施例中,请参考图5,该光阻修补装置包括控制模块100 和处理模块200,该控制模块100用于在光阻层显影形成金属线图形后,获取金属线图形对应的光阻的异常情况的信息(该异常情况的信息例如包括异常情况的位置信息、尺寸信息、深度信息中的一种或两种以上),并根据该异常情况的信息输出控制处理模块200操作的控制指令。控制模块100例如为PLC(Programmable Logic Contro,可编程逻辑控制器)。
处理模块200用于根据该控制指令修复异常情况。进一步的,该光阻修补装置的处理模块200可灵活运动,例如可以进行转动和水平运动,并且具备用于喷射光阻的喷头,以实现对任意位置的光阻的异常情况进行修补。具体地,处理模块200例如可以利用传统的机械臂结合传统的涂胶设备来对异常情况进行修补。
处理模块200根据异常情况的位置信息、尺寸信息控制处理模块200的喷头对异常情况喷射光阻,并且处理模块200根据异常情况的深度信息控制喷头在每个位置喷射的光阻的总量(例如:若喷头单位时间内喷射的光阻的量相同,则控制模块100通过控制喷头喷射光阻的时间即可控制喷头对每个位置喷射的光阻的总量)。
在其中一个实施例中,请继续参考图5,光阻修补装置还包括上述光学显微镜300。该光学显微镜300用于检测金属线图形对应的光阻是否有异常情况,若有,获取异常情况的信息,并发送至上述控制模块100。
上述光阻修补装置,在光刻形成金属线的过程中,光阻层显影形成金属线图形后,在金属线图形对应的光阻有异常情况时,控制模块100获取异常情况的信息,并根据该异常情况的信息产生相应的指令控制处理模块200动作对该异常情况进行精确的修补,避免金属线断线,工艺简单,节约了制作成本。
需要说明的是,本实施例提供的光阻修补装置可以实现的功能与上述实施例提供的阵列面板的检测修复方法中对光阻检测和修复的原理相应,这里就不再赘述。
以上实施例的各技术特征可以进行任意的组合,为使描述简洁,未对上述实施例中的各个技术特征所有可能的组合都进行描述,然而,只要这些技术特征的组合不存在矛盾,都应当认为是本说明书记载的范围。
以上实施例仅表达了本申请的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本申请构思的前提下,还可以做出若干变形和改进,这些都属于本申请的保护范围。因此,本申请专利的保护范围应以所附权利要求为准。

Claims (18)

  1. 一种阵列面板的检测修复方法,包括:
    提供一基板;
    在所述基板上沉积金属层;
    在所述金属层上涂覆光阻,并显影形成金属线图形;
    检测所述金属线图形对应的光阻是否有异常情况,若有,对所述异常情况进行修复;
    刻蚀所述金属层形成金属线。
  2. 根据权利要求1所述的方法,其中,所述对所述异常情况进行修复的步骤为:利用光阻对所述异常情况进行修复。
  3. 根据权利要求2所述的方法,其中,所述检测所述金属线图形对应的光阻是否有异常情况,若有,利用光阻对所述异常情况进行修复的步骤包括:
    通过检测装置检测所述金属线图形对应的光阻是否有异常情况,若有,获取所述异常情况的信息,并发送至光阻修补装置;
    所述光阻修补装置根据所述异常情况的信息对所述异常情况进行修复。
  4. 根据权利要求3所述的方法,其中,还包括步骤:对修复的光阻进行烘烤。
  5. 根据权利要求3所述的方法,其中,所述异常情况的信息包括所述异常情况的位置信息。
  6. 根据权利要求5所述的方法,其中,所述位置信息包括所述异常情况在所述玻璃基板上的位置坐标。
  7. 根据权利要求3所述的方法,其中,所述异常情况的信息包括所述异常情况的尺寸信息。
  8. 根据权利要求7所述的方法,其中,所述尺寸信息包括所述异常情况的轮廓尺寸。
  9. 根据权利要求1所述的方法,其中,所述异常情况包括所述金属线图形对应的光阻异常的穿孔。
  10. 根据权利要求1所述的方法,其中,所述异常情况包括所述金属线图形对应的光阻异常的缝隙。
  11. 根据权利要求1所述的方法,其中,所述异常情况包括所述金属线图形对应的光阻异常的缺口。
  12. 根据权利要求1所述的方法,其中,所述在所述金属层上涂覆光阻,并显影形成金属线图形的步骤包括:
    在所述金属层上涂覆光阻,形成光阻层;
    在所述光阻层上设置掩膜版,遮挡所述金属线图形对应的光阻;
    对所述光阻层曝光,用显影剂将曝光部分的光阻清洗掉,显影形成金属线图形。
  13. 根据权利要求12所述的方法,其中,所述刻蚀所述金属层形成金属线的步骤为:
    将未被光阻覆盖的金属层刻蚀掉,保留所述金属线图形覆盖的金属层,形成金属线。
  14. 根据权利要求1所述的方法,其中,金属层的材质为铝和钼。
  15. 一种光阻修补装置,所述光阻修补装置包括:
    控制模块,所述控制模块设置为在光阻层显影形成金属线图形后,获取所述金属线图形对应的光阻的异常情况的信息,并根据所述异常情况的信息输出控制所述处理模块操作的控制指令;及
    处理模块,所述处理模块设置为根据所述控制指令修复所述异常情况。
  16. 根据权利要求15所述的装置,其中,还包括光学显微镜,所述光学显微镜设置为检测金属线图形对应的光阻是否有异常情况,若有,获取异常情况的信息,并发送至所述控制模块。
  17. 根据权利要求15所述的装置,其中,所述控制模块为可编程逻辑控制器。
  18. 一种阵列面板的检测修复方法,包括:
    提供一基板;
    在所述基板上沉积金属层;
    在所述金属层上涂覆光阻,并显影形成金属线图形;
    通过检测装置检测所述金属线图形对应的光阻是否有异常情况,若有,获取所述异常情况的信息,并发送至光阻修补装置;
    其中,所述异常情况的信息包括所述异常情况的位置信息和尺寸信息;
    所述光阻修补装置根据所述异常情况的信息对所述异常情况进行修复;刻蚀所述金属层形成金属线。
PCT/CN2018/113793 2018-07-30 2018-11-02 阵列面板的检测修复方法和光阻修补装置 WO2020024472A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810852339.2 2018-07-30
CN201810852339.2A CN109119375A (zh) 2018-07-30 2018-07-30 阵列面板的检测修复方法和光阻修补装置

Publications (1)

Publication Number Publication Date
WO2020024472A1 true WO2020024472A1 (zh) 2020-02-06

Family

ID=64863648

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/113793 WO2020024472A1 (zh) 2018-07-30 2018-11-02 阵列面板的检测修复方法和光阻修补装置

Country Status (2)

Country Link
CN (1) CN109119375A (zh)
WO (1) WO2020024472A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3970513B1 (en) 2019-06-07 2023-04-12 Philip Morris Products S.A. Non-tobacco oral nicotine pouch composition

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110034035B (zh) * 2019-03-06 2021-06-15 重庆慧聚成江信息技术合伙企业(有限合伙) 一种晶圆生产集质检与修复一体的光刻胶涂敷检测装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040087947A (ko) * 2003-04-08 2004-10-15 호야 가부시키가이샤 그레이톤 마스크의 결함 수정 방법
US20060035391A1 (en) * 2004-08-13 2006-02-16 Fujitsu Display Technologies Corporation Manufacturing method of array substrate and manufacturing method of liquid crystal display device using the same
CN101458407A (zh) * 2007-12-10 2009-06-17 东捷科技股份有限公司 像素器件修补装置及其应用
CN102253506A (zh) * 2010-05-21 2011-11-23 京东方科技集团股份有限公司 液晶显示基板的制造方法及检测修补设备
CN102809839A (zh) * 2012-08-31 2012-12-05 深圳市华星光电技术有限公司 阵列基板的图形修补装置及方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040087947A (ko) * 2003-04-08 2004-10-15 호야 가부시키가이샤 그레이톤 마스크의 결함 수정 방법
US20060035391A1 (en) * 2004-08-13 2006-02-16 Fujitsu Display Technologies Corporation Manufacturing method of array substrate and manufacturing method of liquid crystal display device using the same
CN101458407A (zh) * 2007-12-10 2009-06-17 东捷科技股份有限公司 像素器件修补装置及其应用
CN102253506A (zh) * 2010-05-21 2011-11-23 京东方科技集团股份有限公司 液晶显示基板的制造方法及检测修补设备
CN102809839A (zh) * 2012-08-31 2012-12-05 深圳市华星光电技术有限公司 阵列基板的图形修补装置及方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3970513B1 (en) 2019-06-07 2023-04-12 Philip Morris Products S.A. Non-tobacco oral nicotine pouch composition

Also Published As

Publication number Publication date
CN109119375A (zh) 2019-01-01

Similar Documents

Publication Publication Date Title
US7230662B2 (en) Color filter substrate and method for fabricating the same
EP2720079A1 (en) Liquid crystal display device and manufacturing method thereof
CN102213857A (zh) 一种彩色滤光基板及其制作方法
US20170090232A1 (en) Display substrate, manufacturing method thereof and display device
JP2007058172A (ja) 遮光膜付き基板、カラーフィルタ基板及びこれらの製造方法、並びに遮光膜付き基板を備えた表示装置。
CN104297978A (zh) 一种显示基板及其制备方法、显示装置及其制备方法
WO2020024472A1 (zh) 阵列面板的检测修复方法和光阻修补装置
CN109143774A (zh) 掩膜板及金属线的制作方法
WO2014201714A1 (zh) Cf玻璃基板及其制作方法、液晶显示装置
JP2015219350A (ja) 表示装置およびその製造方法
CN102213870A (zh) 一种彩色滤光基板及其制作方法
KR20070077998A (ko) 컬러 필터 기판과 그 제조 방법 및 이를 포함한 액정 표시패널
JPH10186349A (ja) 液晶表示素子及びその製造方法
CN100538409C (zh) 电子元件图纹缺陷的修补方法
JP5655426B2 (ja) カラーフィルタの製造方法およびカラーフィルタ
TW202032229A (zh) 顯示裝置
CN104297995A (zh) 显示基板及制备方法、显示装置
JP2002055359A (ja) 液晶表示パネルの製造方法
KR20110011026A (ko) 액정표시장치용 컬러필터 기판의 제조방법
CN103021941B (zh) 一种制造阵列基板的方法、阵列基板及液晶显示设备
KR101385459B1 (ko) 액정표시장치용 인쇄장치
KR20050064888A (ko) 배향막 리페어 장비
KR20070028767A (ko) 액정 표시 장치용 컬러 필터 기판 제조방법
CN104991417A (zh) 显示面板及其制造方法、显示装置
JP2006284668A (ja) カラーフィルタの製造方法及び製造装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18928309

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18928309

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 02/02/2022)

122 Ep: pct application non-entry in european phase

Ref document number: 18928309

Country of ref document: EP

Kind code of ref document: A1