WO2020024472A1 - 阵列面板的检测修复方法和光阻修补装置 - Google Patents
阵列面板的检测修复方法和光阻修补装置 Download PDFInfo
- Publication number
- WO2020024472A1 WO2020024472A1 PCT/CN2018/113793 CN2018113793W WO2020024472A1 WO 2020024472 A1 WO2020024472 A1 WO 2020024472A1 CN 2018113793 W CN2018113793 W CN 2018113793W WO 2020024472 A1 WO2020024472 A1 WO 2020024472A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- photoresist
- metal line
- line pattern
- abnormal
- information
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 102
- 238000000034 method Methods 0.000 title claims abstract description 55
- 230000008439 repair process Effects 0.000 title claims description 60
- 229910052751 metal Inorganic materials 0.000 claims abstract description 126
- 239000002184 metal Substances 0.000 claims abstract description 126
- 230000002159 abnormal effect Effects 0.000 claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000011248 coating agent Substances 0.000 claims abstract description 10
- 238000000576 coating method Methods 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 230000005856 abnormality Effects 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 4
- 238000007689 inspection Methods 0.000 claims description 4
- 230000000717 retained effect Effects 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 43
- 238000004519 manufacturing process Methods 0.000 description 21
- 230000008569 process Effects 0.000 description 14
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 210000002858 crystal cell Anatomy 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001182 laser chemical vapour deposition Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000012812 sealant material Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Definitions
- the present application relates to the field of display screen manufacturing, and in particular, to a method for detecting and repairing an array panel and a photoresist repair device.
- the pixel control device (such as a thin film transistor) in an array panel (such as a TFT array panel) needs to form a metal line during the manufacturing process.
- the metal line includes a gate line and a data line.
- the photoresist When the photoresist has abnormal conditions such as broken lines or perforations, it will usually deal with photoresistance rework, or repair the metal lines caused by abnormal conditions such as light blocking lines or perforations by laser chemical vapor deposition after the metal lines are formed. line.
- the photoresist trade union wastes costs and increases the complexity of production, and the metal electrical impedance generated by laser chemical vapor deposition is relatively high. Therefore, when it is found that the disconnection generated by the process is relatively long, the method of laser chemical vapor deposition cannot be used. Repairing can only be scrapped, increasing costs.
- a method for detecting and repairing an array panel and a photoresist repair device are provided.
- An inspection and repair method for an array panel includes:
- the metal layer is etched to form a metal line.
- a photoresist repair device includes:
- a control module configured to obtain information about an abnormal condition of the photoresist corresponding to the metal line pattern after the photoresist layer is developed to form a metal line pattern, and control the processing module according to the abnormal condition information output Control instructions for operations;
- a processing module configured to repair the abnormal situation according to the control instruction.
- An inspection and repair method for an array panel includes:
- the abnormal situation information includes position information and size information of the abnormal situation
- the photoresist repair device repairs the abnormal condition according to the information of the abnormal condition; etching the metal layer to form a metal line.
- FIG. 1 is a flowchart of a method for detecting and repairing an array panel according to an embodiment
- FIG. 2 is a schematic diagram of a manufacturing process of a pixel control device according to an embodiment
- FIG. 3 is a schematic diagram of a process of manufacturing a pixel control device in another embodiment
- FIG. 4 is a flowchart of a method for detecting and repairing an array panel in another embodiment
- FIG. 5 is a structural block diagram of a photoresist repair device according to an embodiment.
- FIG. 1 is a flowchart of a method for detecting and repairing an array panel according to an embodiment.
- the pixel control device is, for example, a thin film transistor (TFT, Thin Film Transistor).
- the array panel is, for example, a TFT array panel.
- the method for detecting and repairing an array panel includes:
- step S101 a substrate is provided.
- the substrate is, for example, a glass substrate.
- step S102 a metal layer is deposited on the substrate.
- step S103 a photoresist is coated on the metal layer and developed to form a metal line pattern.
- the metal lines include, for example, gate lines and data lines.
- a metal layer 11 is deposited on a glass substrate 10
- a photoresist is coated on the metal layer 11 to form a photoresist layer
- a mask plate is provided on the photoresist layer to block the metal lines.
- the photoresist corresponding to the pattern is exposed to the photoresist layer, and the photoresist of the exposed portion is washed away with a developer, and developed to form a metal line pattern 12.
- the material of the metal layer 11 is aluminum (or copper) and molybdenum.
- step S104 it is detected whether the photoresistor corresponding to the metal line pattern is abnormal, and if so, the abnormal condition is repaired.
- the metal layer not covered by the photoresist needs to be etched away, and the metal layer covered by the metal line pattern is retained to form a metal line.
- the photoresist corresponding to the metal line pattern 12 has abnormal conditions (such as abnormal perforations 20, gaps 21, and notches 22 corresponding to the photoresist corresponding to the metal line pattern)
- it will etch away the metal layer 11 that is not covered by the photoresist at the abnormal situation, which will cause the metal line to be abnormal.
- the gate line is disconnected, which will cause the gate line to lose its proper function and the display screen will be invalid.
- the metal line pattern 12 is repaired in time.
- the step of repairing the abnormal situation is: using a photoresist to repair the abnormal situation.
- the photoresist can be used to fill the perforation 20, repair the gap 21, repair the gap 22, and so on.
- step S105 the metal layer is etched to form a metal line.
- the metal line pattern After the abnormal condition on the metal line pattern is repaired, the metal line pattern can be guaranteed to be intact. In this case, the metal layer not covered by the photoresist is etched, the metal layer covered by the metal line pattern is retained, and finally a complete metal line can be formed.
- a metal layer is deposited on a substrate, a photoresist is coated on the metal layer, and a metal line pattern is developed to develop a metal line pattern. If an abnormal condition of the metal line pattern is detected, it is timely Repair, thus eliminating the need for photoresistance rework and avoiding metal wire breaks. At the same time, there is no need to repair the disconnection after the metal layer is formed by etching the metal layer, the process is simple, and the manufacturing cost is saved.
- the manufacturing process of the TFT-LCD includes the manufacturing process of the TFT array and CF (color filter).
- CF color filter
- Step a deposit Si3N4 (silicon nitride), a-Si (amorphous silicon), N + a-si (N-type silicon): first use PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition method) The technology applies a layer of Si3N4, N + a-si and a-Si respectively, and then applies a photoresist on N + a-si and a-Si to form the desired shape through exposure, development, etching, and stripping. . After the development is completed, the method of step S104 can be used to check whether the photoresist is abnormal, and if so, repair the abnormal condition.
- PECVD Plasma enhanced chemical vapor deposition method
- Step b forming a source line and a drain line.
- a layer of metal material is coated on the a-Si as source and drain lines, and then a photoresist is coated on the metal material and formed into a desired shape through exposure, development, etching, and stripping.
- the method of step S104 can be used to check whether the photoresist is abnormal, and if so, repair the abnormal condition.
- Step c precipitating Si3N4 and ITO (Indium tin oxide): firstly deposit a layer of Si3N4 by PECVD technology, and then coat a layer of ITO.
- Si3N4 and ITO Indium tin oxide
- Methods for forming the colored portion of the color filter include a dye method, a pigment dispersion method, a printing method, an electrolytic deposition method, and an inkjet method.
- the first step of the pigment dispersion method is to disperse fine particles (average particle size of less than 0.1 ⁇ m) (R, G, and B) with uniform particles in a transparent photosensitive resin. Then they are applied in order to form R.G.B three-color patterns by coating, exposure, and development processes.
- the equipment used is mainly coating, exposure, and development equipment.
- a black matrix is generally added at the junction of the three RGB colors.
- a single-layer metal chromium film is formed by a sputtering method; or a BM film of a metal chromium and chromium oxide composite type or a resin-type BM mixed with a carbon resin.
- a protective film and an IT0 electrode need to be formed on the BM. Since the substrate with the color filter (that is, the CF substrate) is used as the front substrate of the liquid crystal panel and the rear substrate with the TFT (that is, the TFT substrate) The liquid crystal cell is formed together, so it is necessary to pay attention to the positioning problem so that each unit of the color filter corresponds to each pixel of the TFT substrate.
- a polyimide film is coated on the surface of the CF substrate and the TFT substrate, respectively, and an alignment film capable of inducing molecules to be arranged as required is formed by a rubbing process.
- a sealant material is laid around the TFT substrate, and a gasket is sprayed on the TFT substrate.
- silver paste was applied to the ends of the transparent electrodes of the CF substrate.
- the two substrates are bonded to each other so that the CF pattern and the TFT pixel pattern are one-to-one positive, and then the sealing material is cured by heat treatment.
- the sealing material it is necessary to leave an injection port so that the liquid crystal can be filled by vacuum.
- a peripheral driving circuit needs to be installed on the panel, and then a polarizing plate is pasted on the surfaces of the two substrates. If it is a transmissive LCD, you must also install a backlight.
- FIG. 4 is a flowchart of a method for detecting and repairing an array panel in another embodiment.
- the method for detecting and repairing the array panel includes:
- step S201 a substrate is provided.
- step S202 a metal layer is deposited on the substrate.
- step S203 a photoresist is coated on the metal layer to form a photoresist layer.
- step S204 a mask plate is provided on the photoresist layer to block the photoresist corresponding to the metal line pattern.
- step S205 the photoresist layer is exposed, and the photoresist of the exposed portion is washed away with a developer, and developed to form a metal line pattern.
- the specific implementation of the step of coating a photoresist on a metal layer and developing a metal line pattern is not limited to the above, as long as it can be developed to form a metal line pattern.
- step S206 the detection device is used to detect whether there is any abnormality in the photoresist corresponding to the metal line pattern. If yes, go to step S207; if no, go to step S209.
- the detection device is, for example, an optical microscope. After developing and forming the metal line pattern, an optical microscope is used to detect whether there is an abnormal condition on the metal line pattern.
- the optical microscope can enlarge and image the minute abnormal condition and obtain the information of the abnormal condition.
- step S207 the abnormal situation information is acquired and sent to the photoresist repair device.
- the abnormal condition information includes, for example, one or two or more of position information, size information, and depth information of the abnormal condition.
- the position information includes, for example, position coordinates of the abnormal situation on the glass substrate.
- the size information includes, for example, the outline size of the abnormal situation.
- step S208 the photoresist repair device repairs the abnormal situation according to the abnormal situation information.
- the photoresist repair device includes, for example, a control module and a processing module.
- the control module is configured to obtain information about an abnormal situation and output control instructions for controlling the operation of the processing module according to the information about the abnormal situation.
- the processing module is configured to repair an abnormal situation according to the control instruction.
- the processing module can be flexibly moved, for example, it can perform rotation and horizontal movement, and has a nozzle for spraying the photoresist, so as to repair the abnormal situation of the photoresist at any position.
- the processing module may, for example, use a conventional robotic arm in combination with a conventional glue application device to repair abnormal conditions.
- the processing module controls the nozzles of the processing module to spray the photoresist on the abnormal situation according to the position information and size information of the abnormal situation, and the processing module controls the total amount of the photoresist sprayed by the nozzle on each position according to the depth information of the abnormal situation.
- the control module can control the total amount of photoresistance sprayed by the printhead at each position by controlling the time of the photoresistance sprayed by the printhead).
- the repaired photoresist can also be baked (for example, baking under the same conditions as in the traditional photolithography process before baking) to avoid the gas pollution detection device emitted by the photoresist.
- the lens improves the accuracy of detecting abnormal conditions from the detection device.
- detecting the photoresist corresponding to the metal line pattern is abnormal. If so, the specific implementation of the step of using the photoresist to repair the abnormal condition is not limited to the above case, as long as the corresponding line pattern can be detected. When the abnormal condition of the photoresist appears, repair the abnormal condition.
- step S209 the metal layer not covered by the photoresist is etched away, and the metal layer covered by the metal line pattern is retained to form a metal line.
- a metal layer is deposited on a substrate, a photoresist is coated on the metal layer, and a metal line pattern is developed to detect whether there is an abnormal condition of the metal line pattern through a detection device, and information on the abnormal condition is obtained.
- the information of the abnormal situation is sent to the photoresist repair device, and the abnormal situation is repaired by the photoresist repair device in time, so that the photoresist rework is not needed, and the metal wire is not broken.
- there is no need to repair the disconnection after the metal layer is formed by etching the metal layer the process is simple, and the manufacturing cost is saved.
- the present application also proposes a photoresist repair device, which can repair abnormal conditions such as light-blocking lines or perforations that occur during the fabrication of thin-film transistors in an array panel.
- the array panel is, for example, a TFT array panel.
- the photoresist repair device includes a control module 100 and a processing module 200.
- the control module 100 is configured to obtain the light corresponding to the metal line pattern after the photoresist layer is developed to form the metal line pattern.
- Information of the abnormal situation includes, for example, one or two or more of position information, size information, depth information of the abnormal situation
- the control module 100 is, for example, a PLC (Programmable Logic Contro).
- the processing module 200 is configured to repair an abnormal situation according to the control instruction. Further, the processing module 200 of the photoresist repair device can be flexibly moved, for example, it can perform rotation and horizontal movement, and is provided with a nozzle for ejecting the photoresist, so as to repair the abnormal situation of the photoresist at any position. Specifically, the processing module 200 may, for example, use a conventional robotic arm in combination with a conventional glue application device to repair an abnormal situation.
- the processing module 200 controls the nozzles of the processing module 200 to spray the photoresist on the abnormal situation according to the position information and size information of the abnormal situation, and the processing module 200 controls the total amount of the photoresist sprayed by the nozzle on each position according to the depth information of the abnormal situation (for example : If the amount of photoresistance sprayed by the printhead per unit time is the same, the control module 100 can control the total amount of photoresistance sprayed by the printhead at each position by controlling the time of photoshoot sprayed by the printhead.
- the photoresist repair device further includes the optical microscope 300 described above.
- the optical microscope 300 is used to detect whether there is an abnormality in the photoresist corresponding to the metal line pattern, and if so, obtain the information of the abnormality and send it to the control module 100.
- the control module 100 obtains the information of the abnormality, and The abnormal situation information generates corresponding instructions to control the processing module 200 to accurately repair the abnormal situation, avoid metal wire disconnection, the process is simple, and the production cost is saved.
- the functions that can be implemented by the photoresist repair device provided in this embodiment correspond to the principles of photoresist detection and repair in the method for detecting and repairing an array panel provided in the above embodiments, and are not repeated here.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
Description
Claims (18)
- 一种阵列面板的检测修复方法,包括:提供一基板;在所述基板上沉积金属层;在所述金属层上涂覆光阻,并显影形成金属线图形;检测所述金属线图形对应的光阻是否有异常情况,若有,对所述异常情况进行修复;刻蚀所述金属层形成金属线。
- 根据权利要求1所述的方法,其中,所述对所述异常情况进行修复的步骤为:利用光阻对所述异常情况进行修复。
- 根据权利要求2所述的方法,其中,所述检测所述金属线图形对应的光阻是否有异常情况,若有,利用光阻对所述异常情况进行修复的步骤包括:通过检测装置检测所述金属线图形对应的光阻是否有异常情况,若有,获取所述异常情况的信息,并发送至光阻修补装置;所述光阻修补装置根据所述异常情况的信息对所述异常情况进行修复。
- 根据权利要求3所述的方法,其中,还包括步骤:对修复的光阻进行烘烤。
- 根据权利要求3所述的方法,其中,所述异常情况的信息包括所述异常情况的位置信息。
- 根据权利要求5所述的方法,其中,所述位置信息包括所述异常情况在所述玻璃基板上的位置坐标。
- 根据权利要求3所述的方法,其中,所述异常情况的信息包括所述异常情况的尺寸信息。
- 根据权利要求7所述的方法,其中,所述尺寸信息包括所述异常情况的轮廓尺寸。
- 根据权利要求1所述的方法,其中,所述异常情况包括所述金属线图形对应的光阻异常的穿孔。
- 根据权利要求1所述的方法,其中,所述异常情况包括所述金属线图形对应的光阻异常的缝隙。
- 根据权利要求1所述的方法,其中,所述异常情况包括所述金属线图形对应的光阻异常的缺口。
- 根据权利要求1所述的方法,其中,所述在所述金属层上涂覆光阻,并显影形成金属线图形的步骤包括:在所述金属层上涂覆光阻,形成光阻层;在所述光阻层上设置掩膜版,遮挡所述金属线图形对应的光阻;对所述光阻层曝光,用显影剂将曝光部分的光阻清洗掉,显影形成金属线图形。
- 根据权利要求12所述的方法,其中,所述刻蚀所述金属层形成金属线的步骤为:将未被光阻覆盖的金属层刻蚀掉,保留所述金属线图形覆盖的金属层,形成金属线。
- 根据权利要求1所述的方法,其中,金属层的材质为铝和钼。
- 一种光阻修补装置,所述光阻修补装置包括:控制模块,所述控制模块设置为在光阻层显影形成金属线图形后,获取所述金属线图形对应的光阻的异常情况的信息,并根据所述异常情况的信息输出控制所述处理模块操作的控制指令;及处理模块,所述处理模块设置为根据所述控制指令修复所述异常情况。
- 根据权利要求15所述的装置,其中,还包括光学显微镜,所述光学显微镜设置为检测金属线图形对应的光阻是否有异常情况,若有,获取异常情况的信息,并发送至所述控制模块。
- 根据权利要求15所述的装置,其中,所述控制模块为可编程逻辑控制器。
- 一种阵列面板的检测修复方法,包括:提供一基板;在所述基板上沉积金属层;在所述金属层上涂覆光阻,并显影形成金属线图形;通过检测装置检测所述金属线图形对应的光阻是否有异常情况,若有,获取所述异常情况的信息,并发送至光阻修补装置;其中,所述异常情况的信息包括所述异常情况的位置信息和尺寸信息;所述光阻修补装置根据所述异常情况的信息对所述异常情况进行修复;刻蚀所述金属层形成金属线。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810852339.2 | 2018-07-30 | ||
CN201810852339.2A CN109119375A (zh) | 2018-07-30 | 2018-07-30 | 阵列面板的检测修复方法和光阻修补装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2020024472A1 true WO2020024472A1 (zh) | 2020-02-06 |
Family
ID=64863648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2018/113793 WO2020024472A1 (zh) | 2018-07-30 | 2018-11-02 | 阵列面板的检测修复方法和光阻修补装置 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN109119375A (zh) |
WO (1) | WO2020024472A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3970513B1 (en) | 2019-06-07 | 2023-04-12 | Philip Morris Products S.A. | Non-tobacco oral nicotine pouch composition |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110034035B (zh) * | 2019-03-06 | 2021-06-15 | 重庆慧聚成江信息技术合伙企业(有限合伙) | 一种晶圆生产集质检与修复一体的光刻胶涂敷检测装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040087947A (ko) * | 2003-04-08 | 2004-10-15 | 호야 가부시키가이샤 | 그레이톤 마스크의 결함 수정 방법 |
US20060035391A1 (en) * | 2004-08-13 | 2006-02-16 | Fujitsu Display Technologies Corporation | Manufacturing method of array substrate and manufacturing method of liquid crystal display device using the same |
CN101458407A (zh) * | 2007-12-10 | 2009-06-17 | 东捷科技股份有限公司 | 像素器件修补装置及其应用 |
CN102253506A (zh) * | 2010-05-21 | 2011-11-23 | 京东方科技集团股份有限公司 | 液晶显示基板的制造方法及检测修补设备 |
CN102809839A (zh) * | 2012-08-31 | 2012-12-05 | 深圳市华星光电技术有限公司 | 阵列基板的图形修补装置及方法 |
-
2018
- 2018-07-30 CN CN201810852339.2A patent/CN109119375A/zh active Pending
- 2018-11-02 WO PCT/CN2018/113793 patent/WO2020024472A1/zh active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040087947A (ko) * | 2003-04-08 | 2004-10-15 | 호야 가부시키가이샤 | 그레이톤 마스크의 결함 수정 방법 |
US20060035391A1 (en) * | 2004-08-13 | 2006-02-16 | Fujitsu Display Technologies Corporation | Manufacturing method of array substrate and manufacturing method of liquid crystal display device using the same |
CN101458407A (zh) * | 2007-12-10 | 2009-06-17 | 东捷科技股份有限公司 | 像素器件修补装置及其应用 |
CN102253506A (zh) * | 2010-05-21 | 2011-11-23 | 京东方科技集团股份有限公司 | 液晶显示基板的制造方法及检测修补设备 |
CN102809839A (zh) * | 2012-08-31 | 2012-12-05 | 深圳市华星光电技术有限公司 | 阵列基板的图形修补装置及方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3970513B1 (en) | 2019-06-07 | 2023-04-12 | Philip Morris Products S.A. | Non-tobacco oral nicotine pouch composition |
Also Published As
Publication number | Publication date |
---|---|
CN109119375A (zh) | 2019-01-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7230662B2 (en) | Color filter substrate and method for fabricating the same | |
EP2720079A1 (en) | Liquid crystal display device and manufacturing method thereof | |
CN102213857A (zh) | 一种彩色滤光基板及其制作方法 | |
US20170090232A1 (en) | Display substrate, manufacturing method thereof and display device | |
JP2007058172A (ja) | 遮光膜付き基板、カラーフィルタ基板及びこれらの製造方法、並びに遮光膜付き基板を備えた表示装置。 | |
CN104297978A (zh) | 一种显示基板及其制备方法、显示装置及其制备方法 | |
WO2020024472A1 (zh) | 阵列面板的检测修复方法和光阻修补装置 | |
CN109143774A (zh) | 掩膜板及金属线的制作方法 | |
WO2014201714A1 (zh) | Cf玻璃基板及其制作方法、液晶显示装置 | |
JP2015219350A (ja) | 表示装置およびその製造方法 | |
CN102213870A (zh) | 一种彩色滤光基板及其制作方法 | |
KR20070077998A (ko) | 컬러 필터 기판과 그 제조 방법 및 이를 포함한 액정 표시패널 | |
JPH10186349A (ja) | 液晶表示素子及びその製造方法 | |
CN100538409C (zh) | 电子元件图纹缺陷的修补方法 | |
JP5655426B2 (ja) | カラーフィルタの製造方法およびカラーフィルタ | |
TW202032229A (zh) | 顯示裝置 | |
CN104297995A (zh) | 显示基板及制备方法、显示装置 | |
JP2002055359A (ja) | 液晶表示パネルの製造方法 | |
KR20110011026A (ko) | 액정표시장치용 컬러필터 기판의 제조방법 | |
CN103021941B (zh) | 一种制造阵列基板的方法、阵列基板及液晶显示设备 | |
KR101385459B1 (ko) | 액정표시장치용 인쇄장치 | |
KR20050064888A (ko) | 배향막 리페어 장비 | |
KR20070028767A (ko) | 액정 표시 장치용 컬러 필터 기판 제조방법 | |
CN104991417A (zh) | 显示面板及其制造方法、显示装置 | |
JP2006284668A (ja) | カラーフィルタの製造方法及び製造装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 18928309 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 18928309 Country of ref document: EP Kind code of ref document: A1 |
|
32PN | Ep: public notification in the ep bulletin as address of the adressee cannot be established |
Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 02/02/2022) |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 18928309 Country of ref document: EP Kind code of ref document: A1 |