WO2020024427A1 - 一种oled显示面板及其制备方法 - Google Patents

一种oled显示面板及其制备方法 Download PDF

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Publication number
WO2020024427A1
WO2020024427A1 PCT/CN2018/109742 CN2018109742W WO2020024427A1 WO 2020024427 A1 WO2020024427 A1 WO 2020024427A1 CN 2018109742 W CN2018109742 W CN 2018109742W WO 2020024427 A1 WO2020024427 A1 WO 2020024427A1
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Prior art keywords
layer
pixel
color filter
light
display panel
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PCT/CN2018/109742
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English (en)
French (fr)
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余文静
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武汉华星光电半导体显示技术有限公司
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Priority to US16/475,871 priority Critical patent/US20200286970A1/en
Publication of WO2020024427A1 publication Critical patent/WO2020024427A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present application relates to the technical field of display panels, and in particular, to an OLED display panel and a manufacturing method thereof.
  • POL-less structure is usually used to replace the polarizer to improve the contrast of the device.
  • POL-less technology is to place the color filter (color filter layer) corresponding to the color on the R, G, and B pixels of the OLED, so that the light emitted by the OLED can be transmitted through the color filter, and the external sunlight Only the light of the color corresponding to the color filter can pass through.
  • the low temperature black between the color filters matrix (black matrix) so that sunlight in non-luminous areas can also be absorbed
  • this method has limitations: First, the low temperature black The matrix may have insufficient optical density (OD) value due to process problems, and cannot fully absorb external sunlight. Unabsorbed sunlight may penetrate again due to reflection and refraction; at the same time, via color The external light that the filter enters the device may be transmitted through the low-temperature black matrix or the color filter next to it due to the reflection in the bank (pixel definition layer) area. Therefore, the contrast of the device cannot meet the needs of consumers.
  • OD optical density
  • the present application provides an OLED display panel and a method for preparing the same, which can solve the problem that the black matrix in the color film layer cannot fully absorb the external sunlight, and the external light transmitted through the color filter layer is re-transmitted due to reflection, resulting in The problem of insufficient contrast of the device.
  • This application provides an OLED display panel, including:
  • a pixel definition layer prepared on the thin film transistor layer and defining a pixel area
  • a pixel unit, an array is prepared in the pixel area
  • a color filter layer is prepared on the thin film encapsulation layer.
  • the color filter layer includes a plurality of color filter layers corresponding to each of the pixel units, and a color filter layer disposed at a gap between each of the color filter layers.
  • a light-shielding layer, and the light-shielding layer extends to an edge portion of the color filter layer;
  • a material of the spacer is a light-shielding material, and the spacer extends toward the pixel region.
  • the light shielding layer is a black matrix.
  • the spacer is disposed around the pixel region, and extends to the adjacent pixel region to a boundary of the pixel region.
  • a surface of the pixel definition layer is provided with a recess, the recess extending from an edge of the pixel region to an edge of an adjacent pixel region, and the spacer is formed in the recess.
  • the material of the light shielding layer and the spacer is the same.
  • At least a part of the pixel defining layer remote from the thin film transistor layer is made of the light shielding material.
  • the present application further provides a method for manufacturing an OLED display panel.
  • the method includes the following steps:
  • step S10 a base substrate is provided.
  • a thin film transistor layer and a pixel definition layer are prepared on the base substrate, and the pixel definition layer defines an array-distributed pixel area;
  • Step S20 preparing a spacer on the pixel definition layer, and then preparing a pixel unit in the pixel area;
  • a thin film encapsulation layer is prepared on the pixel unit, and then a color filter layer is prepared on the thin film encapsulation layer.
  • the color film layer includes a plurality of color filter layers corresponding to the pixel units, and A light shielding layer disposed at a gap between each of the color filter layers;
  • a material of the spacer is a light-shielding material, and the spacer extends toward the pixel region.
  • the spacer surrounds the pixel region, extends toward the pixel region, and stops at a boundary of the pixel region.
  • the step of preparing a color film layer on the thin film encapsulation layer in the step S30 includes:
  • step S301 a light-shielding film is formed on the thin-film encapsulation layer, and the light-shielding layer corresponding to a gap position between two adjacent pixel units is formed after patterning;
  • step S302 the color filter layer is formed at a position of the thin film encapsulation layer corresponding to each of the pixel units.
  • the step of preparing a color film layer on the thin film encapsulation layer in the step S30 includes:
  • step S301 a color filter film is first formed on the thin film encapsulation layer, and the color filter layer corresponding to each of the pixel units is formed after patterning;
  • Step S302 a light-shielding film is then formed on the color filter layer, and the light-shielding layer located at a gap between two adjacent color filter layers is formed after patterning, wherein the light-shielding layer extends to The edge position of the color filter layer.
  • an OLED display panel including:
  • a pixel definition layer prepared on the thin film transistor layer and defining a pixel area
  • a pixel unit, an array is prepared in the pixel area
  • a color filter layer is prepared on the thin film encapsulation layer.
  • the color filter layer includes a plurality of color filter layers corresponding to each of the pixel units, and a color filter layer disposed at a gap between each of the color filter layers.
  • a material of the spacer is a light-shielding material, and the spacer extends toward the pixel region.
  • the light shielding layer is a black matrix.
  • the spacer is disposed around the pixel region, and extends to the adjacent pixel region to a boundary of the pixel region.
  • a surface of the pixel definition layer is provided with a recess, the recess extending from an edge of the pixel region to an edge of an adjacent pixel region, and the spacer is formed in the recess.
  • the material of the light shielding layer and the spacer is the same.
  • At least a part of the pixel defining layer remote from the thin film transistor layer is made of the light shielding material.
  • the beneficial effects of the present application are: an OLED display panel and a preparation method thereof provided by the present application, a color filter layer corresponding to its color is added above the pixel unit, and a light shielding layer located at a gap between the color filter layers is passed, The order of the process of the color filter layer and the light-shielding layer is used to improve the contrast of the display panel.
  • the spacer material provided on the pixel definition layer between adjacent sub-pixels is replaced with a dark light-absorbing material to make the spacer Used as a support, it also functions as a light-shielding layer to further improve the contrast of the display panel; because the external light that has not been absorbed by the light-shielding layer or entered from the color filter layer shines on the corresponding pixel definition layer, it will be spacer again. Absorbed, thereby preventing external light entering the device from penetrating out again due to reflection or refraction, thereby improving the contrast of the device.
  • FIGS. 1A ⁇ 1B are partial schematic diagrams of an OLED display panel in the prior art
  • FIG. 2 is a partial cross-sectional view of an OLED display panel according to an embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of an OLED display panel according to an embodiment of the present application.
  • FIG. 4 is a flowchart of a method for manufacturing an OLED display panel according to an embodiment of the present application.
  • This application is directed to the prior art OLED display panel, because the black matrix in the color film layer cannot completely absorb the external sunlight, and the external light transmitted through the color filter layer is retransmitted due to reflection, resulting in the contrast of the device
  • the technical problem is not high enough, and this embodiment can solve the defect.
  • the OLED display panel includes a pixel definition layer 10, a light-emitting layer 11, a thin film encapsulation layer 12, and a color film layer 13 which are sequentially prepared on a substrate.
  • the light-emitting layer 11 includes an array of red sub-pixels 110, green sub-pixels 111, and blue sub-pixels 112.
  • the color film layer 13 includes a plurality of color filter layers 130 corresponding to each sub-pixel, and A black matrix 131 is disposed at a gap between the color filter layers 130.
  • the black matrix 131 may not have a large OD value due to a manufacturing process, so that the sunlight shining on a non-light-emitting area of the display panel (ie, the black matrix 131) cannot be completely absorbed by the black matrix 131.
  • the light is shown by the arrow in FIG. 1A. Part of the sunlight will penetrate the black matrix 131, and the external light that has not been absorbed may penetrate again due to refraction and reflection, thereby reducing the contrast of the display panel.
  • the OLED display panel includes: a substrate substrate 20; a thin film transistor layer 21 prepared on the substrate substrate 20; and a pixel definition layer 22. It is prepared on the thin film transistor layer 21 and defines a pixel area; a spacer 23 is prepared on the pixel definition layer 22 around the pixel area; a pixel unit 24 is an array is prepared in the pixel area; a thin film An encapsulation layer (not shown) is prepared on the pixel unit 24 and the pixel definition layer 22; a color film layer (not shown) is prepared on the thin film encapsulation layer.
  • the material of the spacers 23 is a light-shielding material, and the spacers 23 extend toward the boundary of the pixel region.
  • the material of the spacers 23 is a black organic light-shielding material.
  • the OLED display panel includes: a substrate 30; a thin film transistor layer 31 prepared on the substrate 30; and a pixel definition layer 32 prepared.
  • the pixel definition layer 32 defines a pixel area; a pixel unit 33 is prepared in the pixel area between two adjacent pixel definition layers 32; the pixel unit 33 includes An anode layer, a light emitting layer, and a cathode layer; a spacer 34 is prepared on the pixel definition layer 32 and is used for supporting when the light emitting layer is evaporated; a thin film encapsulation layer 35 is prepared on the pixel unit 33 and On the spacer pad 34; a color filter layer 36 prepared on the thin film encapsulation layer 35.
  • the color filter layer 36 includes a plurality of color filter layers 361 provided corresponding to the pixel units 33, and The light-shielding layer 360 at the gap between each of the color filter layers 361; the color filter layer 361 corresponding to its color is disposed above different sub-pixels.
  • the light-shielding layer 360 may be a low-temperature black matrix.
  • two preparation schemes are proposed for the color film layer 36.
  • the light-shielding layer 360 is manufactured first, and then the color filter layer 361 is manufactured.
  • This solution can use the IJP technology to plate the color filter layer 361, and the IJP technology does not require the use of a photoresist, which will reduce the manufacturing process. Destruction of OLED structure.
  • the color filter layer 361 is produced first, and then the light-shielding layer 360 is produced; this solution will cause the light-shielding layer 360 to extend to the edge portion of the color filter layer 361, thereby enhancing the light-shielding layer 360.
  • the light absorption effect is beneficial to the contrast of the display panel.
  • the material of the spacers 34 in order to further improve the contrast of the display panel, changing the material of the spacers 34 to a dark material can improve the contrast of the display panel.
  • the material of the spacer pad 34 is a black organic material, which can absorb external light that is not absorbed by the light shielding layer 360.
  • the spacer pad 34 extends to the adjacent pixel region to a boundary position of the pixel region.
  • the light-shielding layer 360 When external light irradiates the surface of the display panel, most of the external light is absorbed by the light-shielding layer 360 due to the light-shielding effect of the light-shielding layer 360 of the color film layer 36.
  • the OD value of the light-shielding layer 360 is not large enough due to manufacturing processes, etc., and a part of the external light may be irradiated to the position corresponding to the pixel defining layer 32 through the light-shielding layer 360.
  • the spacers 34 having a light absorbing function are prepared on the surface, so that external light that is not absorbed by the light shielding layer 360 is absorbed again by the spacers 34, thereby preventing external light entering the device from penetrating again due to reflection or refraction. Go out.
  • the spacer pad 34 can absorb the external light irradiated to the position of the pixel definition layer 32 to avoid the external light The reflection of the pixel definition layer 32 from the color filter layer 361 or the light-shielding layer 360 adjacent to it.
  • a recess may be provided on the surface of the pixel definition layer 32, the recess extending from the edge of the pixel region to the edge of an adjacent pixel region, and the spacer 34 is formed in the recess. That is, a part of the pixel definition layer 32 is cut out, and a light-shielding material that is the same as or similar to that of the spacer pad 34 is filled in the cut-out portion, thereby increasing the area of the spacer pad 34 and further improving the display panel. Contrast. Alternatively, at least a part of the pixel defining layer 32 away from the thin film transistor layer 31 is made of the light shielding material. The spacer 34 has a certain distance from the light-emitting layer, so as not to affect the light-emitting layer.
  • the spacer 34 may be the same as the material of the light shielding layer 360. In addition, the application does not limit the shape and size of the spacer 34.
  • the display panel may further include other conventional film layers not shown, such as a buffer layer may be prepared between the thin film transistor layer 31 and the base substrate 30; the thin film transistor layer 31 and the A flat layer is prepared between the pixel definition layers 32; and a polarizer is provided on the color filter layer 36.
  • a buffer layer may be prepared between the thin film transistor layer 31 and the base substrate 30; the thin film transistor layer 31 and the A flat layer is prepared between the pixel definition layers 32; and a polarizer is provided on the color filter layer 36.
  • the present application also provides a method for manufacturing an OLED display panel. As shown in FIG. 4, the method includes the following steps:
  • step S10 a base substrate is provided.
  • a thin film transistor layer and a pixel definition layer are prepared on the base substrate, and the pixel definition layer defines an array-distributed pixel area;
  • the thin film transistor layer includes a gate, a gate insulating layer, an inter-insulating layer, a source and a drain, and the like, and may also include other conventional film layers.
  • Step S20 preparing a spacer on the pixel definition layer, and then preparing a pixel unit in the pixel area;
  • the material of the spacer is a light-shielding material, and the spacer surrounds the pixel region and extends toward the pixel region and stops at the boundary of the pixel region;
  • the pixel unit includes an anode layer, a light-emitting layer, and a cathode Floor.
  • a thin film encapsulation layer is prepared on the pixel unit, and then a color filter layer is prepared on the thin film encapsulation layer.
  • the color film layer includes a plurality of color filter layers corresponding to the pixel units, and A light shielding layer disposed at a gap between each of the color filter layers;
  • the step of preparing a color film layer on the thin film encapsulation layer in the step S30 includes:
  • step S301 a light-shielding film is formed on the thin-film encapsulation layer, and the light-shielding layer corresponding to a gap position between two adjacent pixel units is formed after patterning;
  • step S302 the color filter layer is formed at a position of the thin film encapsulation layer corresponding to each of the pixel units.
  • the step of preparing a color filter layer on the thin film encapsulation layer in the step S30 includes:
  • step S301 a color filter film is first formed on the thin film encapsulation layer, and the color filter layer corresponding to each of the pixel units is formed after patterning;
  • step S302 a light-shielding film is formed on the color filter layer, and the light-shielding layer located at a gap between two adjacent color filter layers is formed after patterning. The edge position of the color filter layer.
  • this method causes the light shielding layer to extend to the edge portion of the color filter layer, the light absorption effect of the light shielding layer is enhanced, thereby facilitating the contrast of the display panel.
  • the method for preparing an OLED display panel adopts adding a color filter layer corresponding to its color above a pixel unit and a light shielding layer located at a gap between the color filter layers.
  • the sequence of the layer process improves the contrast of the display panel.
  • the spacers provided on the pixel definition layer are designed to have both support and light shielding effects to further improve the contrast of the display panel. For details, please refer to the above-mentioned display panel. The structural embodiment is not repeated here.

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Abstract

本申请提供一种OLED显示面板及其制备方法，OLED显示面板包括：设于衬底基板上的薄膜晶体管层、像素定义层及间隔垫；像素单元设于像素定义层定义的像素区域；像素单元上设有薄膜封装层及彩膜层，彩膜层包括对应像素单元的彩色滤光层，及设于各彩色滤光层之间间隙处的遮光层；其中，间隔垫的材料为遮光材料。

Description

一种OLED显示面板及其制备方法 技术领域
本申请涉及显示面板技术领域，尤其涉及一种OLED显示面板及其制备方法。
 背景技术
目前，通常使用POL-less结构来取代偏光片，提升设备的对比度。POL-less技术是在OLED的R、G、B像素的上方分别放置其颜色所对应的color filter（彩色滤光层），这样OLED所发出的光就能通过color filter传输出去，而外界太阳光也只有color filter所对应颜色的光能透过。
为了提升设备的对比度，在color filter之间填充低温black matrix（黑色矩阵），以使非发光区域的太阳光也能被吸收，但是此种方法具有局限性：首先，低温black matrix可能由于制程问题而导致光学密度（optical density，OD）值不够大，不能完全吸收外界的太阳光，未经吸收的太阳光可能会因反射和折射而再次穿透出去；与此同时，经由color filter进入器件的外界光可能会因为bank（像素定义层）区域的反射，而重新经由低温black matrix或者旁边的color filter透出去，由此，设备的对比度不能满足消费者的需求。
因此，有必要提供一种OLED显示面板，以解决现有技术所存在的问题。
 技术问题
本申请提供一种OLED显示面板及其制备方法，能够解决彩膜层中的黑色矩阵不能完全吸收外界的太阳光，以及经由彩色滤光层透过的外界光由于反射而重新透出，从而导致器件的对比度不够高的问题。
 技术解决方案
为实现上述目的，本申请提供的技术方案如下：
本申请提供一种OLED显示面板，包括：
衬底基板；
薄膜晶体管层，制备于所述衬底基板上；
像素定义层，制备于所述薄膜晶体管层上，且定义出像素区域；
间隔垫，制备于所述像素定义层上；
像素单元，阵列的制备于所述像素区域内；
薄膜封装层，制备于所述像素单元上；
彩膜层，制备于所述薄膜封装层上，所述彩膜层包括与各所述像素单元对应设置的多个彩色滤光层，以及设置于各所述彩色滤光层之间间隙处的遮光层，且所述遮光层延伸至所述彩色滤光层的边缘部位；
其中，所述间隔垫的材料为遮光材料，所述间隔垫向所述像素区域延伸。
在本申请的OLED显示面板中，所述遮光层为黑色矩阵。
在本申请的OLED显示面板中，所述间隔垫围绕所述像素区域设置，并向相邻所述像素区域延伸至所述像素区域边界。
在本申请的OLED显示面板中，所述像素定义层表面设置有凹陷，所述凹陷由所述像素区域边缘向相邻像素区域边缘延伸，所述间隔垫形成于所述凹陷内。
在本申请的OLED显示面板中，所述遮光层与所述间隔垫的材料相同。
在本申请的OLED显示面板中，所述像素定义层远离所述薄膜晶体管层一侧的至少一部分由所述遮光材料制成。
为实现上述目的，本申请还提供一种OLED显示面板的制备方法，所述方法包括以下步骤：
步骤S10，提供一衬底基板，所述衬底基板上制备有薄膜晶体管层以及像素定义层，所述像素定义层定义出阵列分布的像素区域；
步骤S20，在所述像素定义层上制备间隔垫，然后在所述像素区域制备像素单元；
步骤S30，在所述像素单元上制备薄膜封装层，然后在所述薄膜封装层上制备彩膜层，所述彩膜层包括与各所述像素单元对应设置的多个彩色滤光层，以及设置于各所述彩色滤光层之间间隙处的遮光层；
其中，所述间隔垫的材料为遮光材料，所述间隔垫向所述像素区域延伸。
在本申请的制备方法中，所述间隔垫围绕所述像素区域，并向所述像素区域延伸且止于所述像素区域边界。
在本申请的制备方法中，所述步骤S30中在所述薄膜封装层上制备彩膜层的步骤包括：
步骤S301，先在所述薄膜封装层上形成一层遮光膜，图案化后形成对应相邻两所述像素单元之间的间隙位置的所述遮光层；
步骤S302，然后在所述薄膜封装层对应各所述像素单元的位置形成所述彩色滤光层。
在本申请的制备方法中，所述步骤S30中在所述薄膜封装层上制备彩膜层的步骤包括：
步骤S301，先在所述薄膜封装层上形成一层彩色滤光膜，图案化后形成对应各所述像素单元的所述彩色滤光层；
步骤S302，然后在所述彩色滤光层上形成一层遮光膜，图案化后形成位于相邻两所述彩色滤光层之间间隙处的所述遮光层，其中，所述遮光层延伸至所述彩色滤光层的边缘位置。
为实现上述目的，本申请还提供一种OLED显示面板，包括：
衬底基板；
薄膜晶体管层，制备于所述衬底基板上；
像素定义层，制备于所述薄膜晶体管层上，且定义出像素区域；
间隔垫，制备于所述像素定义层上；
像素单元，阵列的制备于所述像素区域内；
薄膜封装层，制备于所述像素单元上；
彩膜层，制备于所述薄膜封装层上，所述彩膜层包括与各所述像素单元对应设置的多个彩色滤光层，以及设置于各所述彩色滤光层之间间隙处的遮光层；
其中，所述间隔垫的材料为遮光材料，所述间隔垫向所述像素区域延伸。
在本申请的OLED显示面板中，所述遮光层为黑色矩阵。
在本申请的OLED显示面板中，所述间隔垫围绕所述像素区域设置，并向相邻所述像素区域延伸至所述像素区域边界。
在本申请的OLED显示面板中，所述像素定义层表面设置有凹陷，所述凹陷由所述像素区域边缘向相邻像素区域边缘延伸，所述间隔垫形成于所述凹陷内。
在本申请的OLED显示面板中，所述遮光层与所述间隔垫的材料相同。
在本申请的OLED显示面板中，所述像素定义层远离所述薄膜晶体管层一侧的至少一部分由所述遮光材料制成。
 有益效果
本申请的有益效果为：本申请提供的OLED显示面板及其制备方法，在像素单元的上方增设对应其颜色的彩色滤光层，以及位于各彩色滤光层之间间隙处的遮光层，通过对彩色滤光层以及遮光层制程的先后顺序来改善显示面板的对比度；此外，还通过将相邻子像素间的像素定义层上设置的间隔垫的材料换成深色吸光材料，使得间隔垫用作支撑的同时兼具遮光层的作用，来进一步提高显示面板的对比度；由于未被遮光层吸收或是从彩色滤光层进入的外界光照射到对应像素定义层处会再一次被间隔垫所吸收，从而避免进入器件的外界光由于反射或折射再次穿透出去，进而提高器件的对比度。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1A~1B为现有技术中OLED显示面板的局部示意图；
图2为本申请实施例提供的OLED显示面板的局部剖面图；
图3为本申请实施例提供的OLED显示面板的结构示意图；
图4为本申请实施例提供的OLED显示面板的制备方法流程图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
本申请针对现有技术的OLED显示面板，由于彩膜层中的黑色矩阵不能完全吸收外界的太阳光，以及经由彩色滤光层透过的外界光由于反射而重新透出，从而导致器件的对比度不够高的技术问题，本实施例能够解决该缺陷。
参阅图1A~1B，为现有技术中OLED显示面板的局部示意图；该OLED显示面板包括依次制备于衬底基板上的像素定义层10、发光层11、薄膜封装层12以及彩膜层13；其中，所述发光层11包括阵列分布的红色子像素110、绿色子像素111、蓝色子像素112；所述彩膜层13包括与各子像素对应设置的多个彩色滤光层130，以及设置于各所述彩色滤光层130之间间隙处的黑色矩阵（black matrix）131。但是所述黑色矩阵131可能由于制程问题而导致自身OD值不够大，从而导致照射至显示面板的非发光区域（即所述黑色矩阵131）的太阳光不能完全被所述黑色矩阵131所吸收，光线如图1A中箭头所示，部分太阳光会穿透所述黑色矩阵131，而未经吸收的外界光可能会由于折射以及反射作用而再次穿透出去，从而降低显示面板的对比度。
如图1A所示，未经所述黑色矩阵131吸收的外界光通过所述像素定义层10的折射从而影响所述显示面板的对比度。由于外界光只有所述彩色滤光层130所对应颜色的光能透过，图1B为经由所述彩色滤光层130进入器件的外界光可能会因为所述像素定义层10的反射，而重新经由所述黑色矩阵131或者旁边的所述彩色滤光层130透出去，从而影响所述显示面板的对比度。因此，对于这种方式的显示面板还需要进一步的改进。
参阅图2，为本申请实施例提供的OLED显示面板的局部剖面图，该OLED显示面板包括：衬底基板20；薄膜晶体管层21，制备于所述衬底基板20上；像素定义层22，制备于所述薄膜晶体管层21上，且定义出像素区域；间隔垫23，围绕所述像素区域制备于所述像素定义层22上；像素单元24，阵列的制备于所述像素区域内；薄膜封装层（图示未标示），制备于所述像素单元24以及所述像素定义层22上；彩膜层（图示未标示），制备于所述薄膜封装层上。其中，所述间隔垫23的材料为遮光材料，所述间隔垫23向所述像素区域边界延伸。优选的，所述间隔垫23的材料为黑色有机遮光材料。
参阅图3，为本申请实施例提供的OLED显示面板的结构示意图，该OLED显示面板包括：衬底基板30；薄膜晶体管层31，制备于所述衬底基板30上；像素定义层32，制备于所述薄膜晶体管层31上，所述像素定义层32定义出像素区域；像素单元33，制备于相邻两所述像素定义层32之间的所述像素区域内；所述像素单元33包括阳极层、发光层以及阴极层；间隔垫34，制备于所述像素定义层32上，用于在蒸镀所述发光层时起支撑作用；薄膜封装层35，制备于所述像素单元33以及所述间隔垫34上；彩膜层36，制备于所述薄膜封装层35上，所述彩膜层36包括与各所述像素单元33对应设置的多个彩色滤光层361，以及设置于各所述彩色滤光层361之间间隙处的遮光层360；不同子像素上方均设置有对应其颜色的所述彩色滤光层361。
其中，所述遮光层360可以为低温黑色矩阵；本实施例有关所述彩膜层36提出了两种制备方案。其一，先制作所述遮光层360，然后再制作所述彩色滤光层361；该方案可用IJP技术镀所述彩色滤光层361，而IJP技术不需要使用光阻，从而会减少制程对OLED结构的破坏。其二，先制作所述彩色滤光层361，再制作所述遮光层360；该方案会导致所述遮光层360延伸至所述彩色滤光层361的边缘部分，增强了所述遮光层360的吸光作用，从而有利于显示面板的对比度。
此外，本实施例为了进一步提高所述显示面板的对比度，将所述间隔垫34的材料换成深色材料，则可提高所述显示面板的对比度。优选的，所述间隔垫34的材料为黑色的有机材料，可以吸收未被所述遮光层360吸收的外界光。
优选的，所述间隔垫34向相邻所述像素区域延伸至所述像素区域边界位置。
在外界光照射到所述显示面板表面时，由于所述彩膜层36的所述遮光层360的遮光作用，大部分外界光被所述遮光层360所吸收，但由于所述遮光层360的制程等原因使得所述遮光层360的OD值不够大，还会有一部分的外界光透过所述遮光层360照射到对应所述像素定义层32的位置，但由于所述像素定义层32的表面制备有具有吸光功能的所述间隔垫34，使得未被所述遮光层360吸收的外界光再一次被所述间隔垫34所吸收，从而避免进入器件的外界光由于反射或折射再次穿透出去。此外，当外界光通过所述彩色滤光层361进入所述显示面板内部时，所述间隔垫34可将照射到所述像素定义层32位置的所述外界光吸收掉，避免所述外界光经所述像素定义层32的反射从旁边的所述彩色滤光层361或所述遮光层360透出去的现象。
此外，所述像素定义层32表面可设置凹陷，所述凹陷由所述像素区域边缘向相邻像素区域边缘延伸，所述间隔垫34形成于所述凹陷内。即可将所述像素定义层32挖去一部分，并在挖去部分填充与所述间隔垫34材料一致或相似的遮光材料，从而提升所述间隔垫34的面积，进而提高所述显示面板的对比度。或者，所述像素定义层32远离所述薄膜晶体管层31一侧的至少一部分由所述遮光材料制成。其中，所述间隔垫34与所述发光层具有一定距离，以免对所述发光层造成影响。
其中，所述间隔垫34可以与所述遮光层360的材料相同。此外，本申请不对所述间隔垫34的形状及大小进行限定。
另外，该显示面板中还可以包括图示未标示的其他常规膜层，比如所述薄膜晶体管层31与所述衬底基板30之间还可以制备缓冲层；所述薄膜晶体管层31与所述像素定义层32之间制备有平坦层；以及所述彩膜层36上设置有偏光片等。
本申请还提供一种OLED显示面板的制备方法，如图4所示，所述方法包括以下步骤：
步骤S10，提供一衬底基板，所述衬底基板上制备有薄膜晶体管层以及像素定义层，所述像素定义层定义出阵列分布的像素区域；
其中，所述薄膜晶体管层包括栅极、栅绝缘层、间绝缘层、源极与漏极等，还可以包括其他常规膜层。
步骤S20，在所述像素定义层上制备间隔垫，然后在所述像素区域制备像素单元；
其中，所述间隔垫的材料为遮光材料，所述间隔垫围绕所述像素区域，并向所述像素区域延伸且止于所述像素区域边界；所述像素单元包括阳极层、发光层以及阴极层。
步骤S30，在所述像素单元上制备薄膜封装层，然后在所述薄膜封装层上制备彩膜层，所述彩膜层包括与各所述像素单元对应设置的多个彩色滤光层，以及设置于各所述彩色滤光层之间间隙处的遮光层；
其中，所述步骤S30中在所述薄膜封装层上制备彩膜层的步骤包括：
步骤S301，先在所述薄膜封装层上形成一层遮光膜，图案化后形成对应相邻两所述像素单元之间的间隙位置的所述遮光层；
步骤S302，然后在所述薄膜封装层对应各所述像素单元的位置形成所述彩色滤光层。
由于该方法可用IJP技术镀所述彩色滤光层，从而会减少制程对OLED结构（发光层）的破坏。
或者，所述步骤S30中在所述薄膜封装层上制备彩膜层的步骤包括：
步骤S301，先在所述薄膜封装层上形成一层彩色滤光膜，图案化后形成对应各所述像素单元的所述彩色滤光层；
步骤S302，然后在所述彩色滤光层上形成一层遮光膜，图案化后形成位于相邻两所述彩色滤光层之间间隙处的所述遮光层，其中，所述遮光层延伸至所述彩色滤光层的边缘位置。
由于这种方法会导致所述遮光层延伸至所述彩色滤光层的边缘部分，增强了所述遮光层的吸光作用，从而有利于显示面板的对比度。
本申请提供的OLED显示面板的制备方法，采用在像素单元的上方增设对应其颜色的彩色滤光层，以及位于各彩色滤光层之间间隙处的遮光层，通过对彩色滤光层以及遮光层制程的先后顺序来改善显示面板的对比度；此外，还通过将像素定义层上设置的间隔垫设计成兼具支撑作用与遮光作用，来进一步提高显示面板的对比度；具体可参照上述显示面板的结构实施例，此处不再赘述。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (16)

  1. 一种OLED显示面板，其包括：
    衬底基板；
    薄膜晶体管层，制备于所述衬底基板上；
    像素定义层，制备于所述薄膜晶体管层上，且定义出像素区域；
    间隔垫，制备于所述像素定义层上；
    像素单元，阵列的制备于所述像素区域内；
    薄膜封装层，制备于所述像素单元上；
    彩膜层，制备于所述薄膜封装层上，所述彩膜层包括与各所述像素单元对应设置的多个彩色滤光层，以及设置于各所述彩色滤光层之间间隙处的遮光层，且所述遮光层延伸至所述彩色滤光层的边缘部位；
    其中，所述间隔垫的材料为遮光材料，所述间隔垫向所述像素区域延伸。
  2. 根据权利要求1所述的OLED显示面板，其中，所述遮光层为黑色矩阵。
  3. 根据权利要求1所述的OLED显示面板，其中，所述间隔垫围绕所述像素区域设置，并向相邻所述像素区域延伸至所述像素区域边界。
  4. 根据权利要求1所述的OLED显示面板，其中，所述像素定义层表面设置有凹陷，所述凹陷由所述像素区域边缘向相邻像素区域边缘延伸，所述间隔垫形成于所述凹陷内。
  5. 根据权利要求1所述的OLED显示面板，其中，所述遮光层与所述间隔垫的材料相同。
  6. 根据权利要求1所述的OLED显示面板，其中，所述像素定义层远离所述薄膜晶体管层一侧的至少一部分由所述遮光材料制成。
  7. 一种OLED显示面板的制备方法，其中，所述方法包括以下步骤：
    步骤S10，提供一衬底基板，所述衬底基板上制备有薄膜晶体管层以及像素定义层，所述像素定义层定义出阵列分布的像素区域；
    步骤S20，在所述像素定义层上制备间隔垫，然后在所述像素区域制备像素单元；
    步骤S30，在所述像素单元上制备薄膜封装层，然后在所述薄膜封装层上制备彩膜层，所述彩膜层包括与各所述像素单元对应设置的多个彩色滤光层，以及设置于各所述彩色滤光层之间间隙处的遮光层；
    其中，所述间隔垫的材料为遮光材料，所述间隔垫向所述像素区域延伸。
  8. 根据权利要求7所述的制备方法，其中，所述间隔垫围绕所述像素区域，并向所述像素区域延伸且止于所述像素区域边界。
  9. 根据权利要求7所述的制备方法，其中，所述步骤S30中在所述薄膜封装层上制备彩膜层的步骤包括：
    步骤S301，先在所述薄膜封装层上形成一层遮光膜，图案化后形成对应相邻两所述像素单元之间的间隙位置的所述遮光层；
    步骤S302，然后在所述薄膜封装层对应各所述像素单元的位置形成所述彩色滤光层。
  10. 根据权利要求7所述的制备方法，其中，所述步骤S30中在所述薄膜封装层上制备彩膜层的步骤包括：
    步骤S301，先在所述薄膜封装层上形成一层彩色滤光膜，图案化后形成对应各所述像素单元的所述彩色滤光层；
    步骤S302，然后在所述彩色滤光层上形成一层遮光膜，图案化后形成位于相邻两所述彩色滤光层之间间隙处的所述遮光层，其中，所述遮光层延伸至所述彩色滤光层的边缘位置。
  11. 一种OLED显示面板，其包括：
    衬底基板；
    薄膜晶体管层，制备于所述衬底基板上；
    像素定义层，制备于所述薄膜晶体管层上，且定义出像素区域；
    间隔垫，制备于所述像素定义层上；
    像素单元，阵列的制备于所述像素区域内；
    薄膜封装层，制备于所述像素单元上；
    彩膜层，制备于所述薄膜封装层上，所述彩膜层包括与各所述像素单元对应设置的多个彩色滤光层，以及设置于各所述彩色滤光层之间间隙处的遮光层；
    其中，所述间隔垫的材料为遮光材料，所述间隔垫向所述像素区域延伸。
  12. 根据权利要求11所述的OLED显示面板，其中，所述遮光层为黑色矩阵。
  13. 根据权利要求11所述的OLED显示面板，其中，所述间隔垫围绕所述像素区域设置，并向相邻所述像素区域延伸至所述像素区域边界。
  14. 根据权利要求11所述的OLED显示面板，其中，所述像素定义层表面设置有凹陷，所述凹陷由所述像素区域边缘向相邻像素区域边缘延伸，所述间隔垫形成于所述凹陷内。
  15. 根据权利要求11所述的OLED显示面板，其中，所述遮光层与所述间隔垫的材料相同。
  16. 根据权利要求11所述的OLED显示面板，其中，所述像素定义层远离所述薄膜晶体管层一侧的至少一部分由所述遮光材料制成。
PCT/CN2018/109742 2018-08-03 2018-10-10 一种oled显示面板及其制备方法 WO2020024427A1 (zh)

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