WO2020022544A1 - Vehicle lamp using semiconductor light-emitting device - Google Patents

Vehicle lamp using semiconductor light-emitting device Download PDF

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Publication number
WO2020022544A1
WO2020022544A1 PCT/KR2018/008641 KR2018008641W WO2020022544A1 WO 2020022544 A1 WO2020022544 A1 WO 2020022544A1 KR 2018008641 W KR2018008641 W KR 2018008641W WO 2020022544 A1 WO2020022544 A1 WO 2020022544A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
vehicle lamp
semiconductor light
emitting device
insulating member
Prior art date
Application number
PCT/KR2018/008641
Other languages
French (fr)
Korean (ko)
Inventor
강용대
이도형
김우태
이현호
Original Assignee
엘지전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지전자 주식회사 filed Critical 엘지전자 주식회사
Publication of WO2020022544A1 publication Critical patent/WO2020022544A1/en

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/90—Methods of manufacture
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
    • F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
    • F21S41/141—Light emitting diodes [LED]
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S43/00—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights
    • F21S43/10—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by the light source
    • F21S43/13—Signalling devices specially adapted for vehicle exteriors, e.g. brake lamps, direction indicator lights or reversing lights characterised by the light source characterised by the type of light source
    • F21S43/14—Light emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21W—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO USES OR APPLICATIONS OF LIGHTING DEVICES OR SYSTEMS
    • F21W2102/00—Exterior vehicle lighting devices for illuminating purposes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Definitions

  • the present invention relates to a vehicle lamp, and more particularly to a vehicle lamp using a semiconductor light emitting device.
  • the vehicle is equipped with various vehicle lamps having an illumination function and a signal function.
  • halogen lamps or gas discharge lamps have been mainly used, but in recent years, light emitting diodes (LEDs) have attracted attention as light sources of vehicle lamps.
  • LEDs light emitting diodes
  • a light emitting diode itself, not a package, is a semiconductor light emitting device that converts current into light, and is being developed as a light source for display images of electronic devices including information communication devices.
  • the vehicle lamps developed to date use a packaged light emitting diode, so that the yield is not good and expensive, and the degree of flexibility is weak.
  • the phosphor sheet contains a large amount of expensive phosphors and takes a large part in the manufacturing cost.
  • the present invention provides a method for manufacturing a vehicle lamp mill vehicle lamp that can reduce the manufacturing cost in a vehicle lamp including a semiconductor light emitting device.
  • An object of the present invention is to provide a vehicle lamp and a method for manufacturing the vehicle lamp that the manufacturing cost of the vehicle lamp including the semiconductor light emitting device is reduced.
  • a vehicle lamp including a light source unit for emitting light, comprising: a base substrate; An insulation member structure disposed on the base substrate; A semiconductor light emitting device assembled on the base substrate and disposed between the insulating member structures; And a fluorescent layer formed of a resin including a phosphor formed to surround the semiconductor light emitting device, wherein the fluorescent layer fills a gap between the insulating member structures.
  • the insulating member structure has a first surface and a second surface disposed facing each other up and down, the first surface is bonded to the base substrate, the second surface is the area of the first surface It is formed narrower than that characterized in that the inclined surface toward the semiconductor light emitting device is formed.
  • the resin of the fluorescent layer is characterized in that formed of a thermosetting material.
  • the content of the phosphor per 100 parts by weight of the fluorescent layer is characterized in that more than 50 parts by weight.
  • the method of manufacturing a vehicle lamp comprising the steps of: disposing an insulating member structure and a semiconductor light emitting element on the base substrate; Filling the gap between the insulation member structures with a resin including a phosphor to form an uncured phosphor layer; And thermosetting the uncured fluorescent layer at a predetermined temperature to form a fluorescent layer.
  • the step of forming the uncured fluorescent layer is characterized in that the screen printing to fill the gap between the insulating member structure with a resin containing a phosphor.
  • the predetermined temperature of the step of forming the fluorescent layer is characterized in that the range of 120 to 190 °C.
  • the vehicle lamp and the manufacturing method according to the present invention comprising a semiconductor light emitting device between the insulating member structure disposed on the base substrate, and includes a fluorescent layer for filling the gap between the insulating member structure while surrounding the semiconductor light emitting device. Therefore, it is possible to reduce the manufacturing cost of the vehicle lamp because it has the effect of reducing the consumption of expensive phosphors.
  • FIG. 1A is a conceptual diagram illustrating a rear lamp as an embodiment of a vehicle lamp.
  • FIG. 1B is an enlarged view illustrating a state in which the rear lamp of FIG. 1A emits light.
  • FIG. 2 is a perspective view for explaining a light source unit of a vehicle lamp according to the present invention.
  • FIG. 3 is a cross-sectional view of the light source unit of the vehicle lamp illustrated in FIG. 2 as viewed from the A-A plane.
  • FIG. 4 is a cross-sectional view showing another embodiment of a vehicle lamp including a light source unit according to the present invention.
  • FIG. 5 is a cross-sectional view illustrating a method of manufacturing a vehicle lamp having a light source unit according to the present invention.
  • Vehicle lamps described herein may include headlights (headlamps), taillights, traffic lights, fog lights, turn signals, brake lights (brake lamps), emergency lights, reversing lights (tail lamps), and the like.
  • headlights headlamps
  • taillights traffic lights
  • fog lights turn signals
  • brake lights brake lights
  • emergency lights reversing lights
  • tail lamps and the like.
  • the configuration according to the embodiments described herein may be applied to a new product form that will be developed later, as long as the device can emit light.
  • FIG. 1A is a conceptual diagram illustrating a rear lamp as an example of a vehicle lamp
  • FIG. 1B is an enlarged view illustrating a state in which the rear lamp of FIG. 1A is emitted.
  • rear lamps 100 of a vehicle are disposed at both sides of a rear surface of a vehicle, thereby forming a rear exterior of the vehicle.
  • the rear lamp 100 may be a lamp in which a tail lamp, a direction indicator lamp, a brake lamp, an emergency lamp, and a tail lamp are combined in a package form. That is, the rear lamp 100 includes a plurality of lamps that selectively emit light under the control of the vehicle.
  • At least one of the plurality of lamps may be formed to emit a predetermined shape.
  • the brake lamp 100a is elongated in the horizontal direction, and is curved to be curved in at least a portion of the brake lamp 100a so as to emit light corresponding to the shape of the brake lamp 100a.
  • the brake lamp may be bent toward the front of the vehicle.
  • Such a complex shape having a three-dimensional shape may be implemented by a plurality of light emitting regions.
  • light emitting regions having different shapes are combined with each other to realize the predetermined shape.
  • a light source unit 1000 implemented by a semiconductor light emitting device may be disposed in the light emitting area.
  • the light source unit 1000 may be fixed to the vehicle body through a frame, and the frame may be a base substrate for disposing the light source unit 1000.
  • the light source portion can be a flexible light source portion that can be bent, twisted, foldable, rollable, which can be bent by an external force.
  • the light source unit may be implemented as a surface light source having a light emitting surface corresponding to the light emitting area.
  • the light source unit 1000 may be provided in plural and disposed in each of the light emitting regions, or one light source unit may be formed to implement the entire shape.
  • the pixel of the light source unit 1000 may be implemented by a semiconductor light emitting device.
  • the present invention exemplifies a light emitting diode (LED) as one type of semiconductor light emitting device for converting current into light.
  • the light emitting diode may be a semiconductor light emitting device having a size of several micrometers to several tens of micrometers, and thus may serve as a pixel in the three-dimensional space.
  • the light source unit according to the present invention a plurality of semiconductor light emitting elements disposed on one surface of the substrate, an insulating member formed to surround the semiconductor light emitting element, the semiconductor light emitting element It may be configured to include a first electrode and a second electrode that is electrically connected to any part of the insulating member disposed on one surface of the insulating member.
  • the present invention is to provide a method for manufacturing a vehicle lamp and a vehicle lamp in which the manufacturing cost is reduced by reducing the consumption of expensive phosphors in the manufacture of a vehicle lamp in the vehicle lamp, more specifically, in conjunction with the accompanying drawings, Take a look.
  • FIG. 2 is a perspective view illustrating a light source unit of a vehicle lamp according to the present invention
  • FIG. 3 is a cross-sectional view of the light source unit of the vehicle lamp as seen in FIG.
  • the light source unit 1000 of the vehicle lamp includes a base substrate 1010, an insulating member structure 1020, a semiconductor light emitting device 1030, a fluorescent layer 1040, and an optical film 1050. It may include.
  • the base substrate 1010 may be formed of various materials, and may be made flexible or inflexible.
  • the base substrate 1010 may include glass or polyimide (PI).
  • PI polyimide
  • any material such as polyethylene naphthalate (PEN) and polyethylene terephthalate (PET) may be used as long as it is an insulating and flexible material.
  • a first electrode and a second electrode (not shown) formed to be connected to the semiconductor light emitting device 1030 may be disposed on one surface of the base substrate 1010. Through this, the first electrode and the second electrode and the semiconductor light emitting device 150 may be electrically connected.
  • first electrode and the second electrode and the semiconductor light emitting device 1030 may be physically contacted with an adhesive (not shown) having conductivity to form an electrical connection.
  • the adhesive may be formed of a metal paste (silver paste, tin paste) and solder. The enumeration of the adhesive is merely illustrative and the present invention is not limited thereto.
  • the insulating member structure 1020 may be disposed on the base substrate 1010.
  • the soft member structure 1020 may be formed in a film shape and attached to the base substrate 1010 so that an opening may be formed in a region where the semiconductor light emitting device 1030 is disposed.
  • the opening may be referred to as a gap between the insulating member structures 1020.
  • the insulating member structure 1020 may be made of a polymer resin, preferably may be formed of polycarbonate (PC).
  • the insulating member structure 1020 may be formed of a material having high reflectivity to improve the luminous efficiency of the light source unit 1000 while serving as a partition wall between the plurality of semiconductor light emitting devices 1030.
  • the insulating member structure 1020 may include particles to reflect light emitted from the semiconductor light emitting device 1030 to improve the light emitting efficiency of the light source unit (1000).
  • the particles may be titanium oxide (TiO 2 ) particles.
  • the semiconductor light emitting device 1030 may have a size of several micrometers to several tens of micrometers.
  • the semiconductor light emitting device 1030 may be assembled on the base substrate 1010 and disposed between the insulating member structures 1020.
  • the semiconductor light emitting device 1030 includes a first conductive electrode, a first conductive semiconductor layer on which the first conductive electrode is formed, an active layer formed on the first conductive semiconductor layer, and a second conductive type formed on the active layer.
  • the semiconductor layer may include a second conductive electrode formed on the second conductive semiconductor layer.
  • the first conductive electrode and the first conductive semiconductor layer may be p-type electrodes and p-type semiconductor layers, respectively, and the second conductive electrode and second conductive semiconductor layer may be n-type electrodes and n-type, respectively. It can be a semiconductor layer.
  • the present invention is not necessarily limited thereto, and an example in which the first conductive type is n-type and the second conductive type is p-type is also possible.
  • the fluorescent layer 1040 may be formed to surround the semiconductor light emitting device 1030. In addition, the fluorescent layer 1040 may be formed to fill a gap between the insulating member structures 1020.
  • the fluorescent layer 1040 may be formed of a resin including a phosphor.
  • the phosphor may include a YAG: Ce-based phosphor to convert light of a semiconductor light emitting device emitting blue light into white light.
  • the phosphor may be formed of a red phosphor and a green phosphor to convert blue light into another color.
  • the resin for forming the fluorescent layer 1040 may be formed of a thermosetting material.
  • the resin may be formed of a silicone resin.
  • the silicone resin is a resin containing siloxane bonds (Si-O bonds) in which silicon and oxygen are alternated in a molecular structure.
  • the phosphor in the phosphor layer 1040 may be formed in an amount of 50 parts by weight or more. That is, the content of the phosphor per 100 parts by weight of the fluorescent layer 1040 may be 50 parts by weight or more.
  • the color temperature and color conversion according to the phosphor can be sufficiently made. That is, when the content of the phosphor is less than 50 parts by weight of the total weight of the fluorescent layer 1040, the color conversion of the light emitted from the semiconductor light emitting device 1030 may not be sufficient.
  • the light emitted from the semiconductor light emitting device 1030 is a color conversion is performed through the fluorescent layer 1040, the optical film 1050 may be further disposed to obtain a uniform light to the emission surface.
  • the optical film 1050 may include a diffusion plate 1051, an optical sheet 1052, and a liquid crystal display (LCD) 1053. That is, the vehicle lamp 1000 may be formed by disposing the optical film 1050 on which the diffusion plate 1051, the optical sheet 1052, and the liquid crystal display device 1053 are stacked on the semiconductor light emitting device 1030.
  • the diffusion plate 1051 may be formed as a translucent plate that diffuses light emitted from a point light source along a surface so that color and brightness are uniformly displayed on the entire screen.
  • the optical sheet 1052 is formed of any one of a high brightness film or a composite sheet is formed so that high quality light can be emitted to the light emitting surface.
  • FIG. 4 is a cross-sectional view showing another embodiment of a vehicle lamp including a light source unit according to the present invention.
  • the light source unit of the vehicle lamp may differ from the structure of the insulating member structure 1020a so that more light is emitted from the semiconductor light emitting device 1030 to the light emitting surface.
  • the insulating member structure 1020a has opposing first and second surfaces disposed up and down with each other, the first surface being bonded to the base substrate 1010, and the second and second surfaces being the second surface. It may be formed narrower than the area of.
  • the cross section of the insulating member structure 1020a may be formed in the shape of a trapezoid as shown. That is, the insulating member structure 1020a may be formed as an inclined surface facing the semiconductor light emitting device 1030. Accordingly, since the light emitted from the semiconductor light emitting device 1030 may be reflected on the inclined surface, the light emission efficiency may be further increased than the vehicle lamp of FIG. 3.
  • FIG. 5 is a cross-sectional view illustrating a method of manufacturing a vehicle lamp having a light source unit according to the present invention.
  • FIG. 5 a method of manufacturing a vehicle lamp having a light source unit according to the present disclosure follows FIGS. 5A and 5B.
  • the insulating member structure 1020 and the semiconductor light emitting device 1030 are disposed on a base substrate, and the gap between the insulating member structures 1020 is filled with a resin 1040 ′′ including a phosphor.
  • a step of forming the uncured fluorescent layer 1040 ' is shown.
  • the insulating member structure 1020 and the semiconductor light emitting device 1030 may be disposed on the base substrate 1010.
  • the arrangement order of the insulating member structure 1020 and the semiconductor light emitting device 1030 may be changed for convenience. That is, the insulating member structure 1020 may be disposed on the base substrate 1010, and then the semiconductor light emitting device 1030 may be disposed. In another embodiment, an embodiment in which the semiconductor light emitting device 1030 is disposed on the base substrate 1010 and then the insulating member structure 1020 is disposed.
  • the semiconductor light emitting device 1030 may be positioned between the insulating member structures 1020, and a gap is formed between the insulating member structures 1020.
  • a resin 1040 "including a paste-shaped phosphor may be applied to the screen mask 10 including the masking part 11 and the opening 12.
  • the squeegee 20 may be applied.
  • the non-cured fluorescent layer 1040 ′ may be formed by injecting a resin 1040 ′′ including a phosphor into the gap between the insulating member structures 1020 by closely moving the screen mask 10. That is, the uncured phosphor layer 1040 ′ may be formed by screen printing.
  • the resin 1040 ′′ including the phosphor may have an appropriate viscosity that may be filled by screen printing between the insulating member structures 1020.
  • the uncured fluorescent layer 1040 ′ may be thermally cured at a predetermined temperature to form the fluorescent layer 1040.
  • the predetermined temperature may be in a range of 120 to 190 ° C. in which the resin 1040 ′′ including the phosphor may be sufficiently cured.
  • the thermosetting temperature of the uncured fluorescent layer 1040 ′ exceeds 190 ° C.
  • the insulating member Deformation of the structure 1020 may be caused, that is, forming the fluorescent layer 1040 may cause the base substrate 1010 or the insulating member structure 1020 to heat up while the uncured fluorescent layer 1040 'is sufficiently cured. It can be carried out in a temperature range that is not deformed by.
  • the vehicle lamp using the semiconductor light emitting device described above is not limited to the configuration and method of the above-described embodiments, the above embodiments may be configured by selectively combining all or some of the embodiments so that various modifications may be made. It may be.
  • the present invention relates to a vehicle lamp, and in particular, can be used in the vehicle lamp industry using semiconductor light emitting devices.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

The present invention relates to a vehicle lamp having a light source unit for emitting light, the vehicle lamp comprising: a base substrate; insulating member structures arranged on the base substrate; semiconductor light-emitting devices assembled on the base substrate and arranged between the insulating member structures; and fluorescent layers made of a resin including a fluorescent body, for encompassing the semiconductor light-emitting devices, wherein the fluorescent layers fill gaps between the insulating member structures.

Description

반도체 발광소자를 이용한 차량용 램프Vehicle Lamp Using Semiconductor Light-Emitting Element
본 발명은 차량용 램프에 관한 것으로 특히, 반도체 발광소자를 이용한 차량용 램프에 관한 것이다.The present invention relates to a vehicle lamp, and more particularly to a vehicle lamp using a semiconductor light emitting device.
차량은 조명 기능이나 신호 기능을 가지는 다양한 차량용 램프를 구비하고 있다. 일반적으로, 할로겐 램프나 가스 방전식 램프가 주로 사용되어 왔으나, 최근에는 발광다이오드(LED; Light Emitting Diode)가 차량용 램프의 광원으로 주목 받고 있다. The vehicle is equipped with various vehicle lamps having an illumination function and a signal function. In general, halogen lamps or gas discharge lamps have been mainly used, but in recent years, light emitting diodes (LEDs) have attracted attention as light sources of vehicle lamps.
발광다이오드의 경우 사이즈를 최소화함으로서 램프의 디자인 자유도를 높여줄 뿐만 아니라 반영구적인 수명으로 인해 경제성도 갖추고 있으나, 현재 대부분 패키지 형태로 생산되고 있다. 패키지가 아닌 발광 다이오드(Light Emitting Diode: LED) 자체는 전류를 빛으로 변환시키는 반도체 발광소자로서, 정보 통신기기를 비롯한 전자장치의 표시 화상용 광원으로 개발 중이다. In the case of a light emitting diode, the size of the light emitting diode is minimized to increase the degree of freedom of design of the lamp and the economical efficiency is due to the semi-permanent life, but most of the light emitting diode is produced in a package form. A light emitting diode (LED) itself, not a package, is a semiconductor light emitting device that converts current into light, and is being developed as a light source for display images of electronic devices including information communication devices.
현재까지 개발된 차량용 램프는 패키지 형태의 발광 다이오드를 이용하는 것이기에 양산 수율이 좋지 않고 비용이 많이 소요될 뿐 아니라, 플렉서블의 정도가 약하다는 약점이 존재한다. The vehicle lamps developed to date use a packaged light emitting diode, so that the yield is not good and expensive, and the degree of flexibility is weak.
따라서, 최근에는, 패키지가 아닌 반도체 발광소자의 자체를 이용하여 면광원을 제조하여 차량용 램프에 적용하는 시도가 있다.Therefore, recently, an attempt has been made to manufacture a surface light source using a semiconductor light emitting device itself rather than a package and apply it to a vehicle lamp.
하지만, 반도체 발광소자를 이용하여 디스플레이 패널로 제작하기 위해서는 반도체 발광소자 이외의 형광체 시트, 확산판과 같은 다양한 광학적 부자재가 소모된다. 특히, 형광체 시트는 고비용의 형광체를 포함하는 것으로 제조 단가에 큰 부분을 차지한다.However, in order to manufacture a display panel using a semiconductor light emitting device, various optical auxiliary materials such as phosphor sheets and diffusion plates other than the semiconductor light emitting device are consumed. In particular, the phosphor sheet contains a large amount of expensive phosphors and takes a large part in the manufacturing cost.
이에, 본 발명에서는 반도체 발광소자를 포함하는 차량용 램프에서 제조 단가를 절감할 수 있는 차량용 램프 밀 차량용 램프의 제조 방법을 제시한다.Accordingly, the present invention provides a method for manufacturing a vehicle lamp mill vehicle lamp that can reduce the manufacturing cost in a vehicle lamp including a semiconductor light emitting device.
본 발명의 일 목적은 반도체 발광소자를 포함하는 차량용 램프의 제조 단가가 절감된 차량용 램프 및 차량용 램프의 제조방법을 제공하기 위한 것이다.An object of the present invention is to provide a vehicle lamp and a method for manufacturing the vehicle lamp that the manufacturing cost of the vehicle lamp including the semiconductor light emitting device is reduced.
본 발명은 빛을 발광하는 광원부를 구비하는 차량용 램프에 있어서, 베이스 기판; 상기 베이스 기판 상에 배치되는 절연부재 구조물; 상기 베이스 기판상에 조립되고, 상기 절연부재 구조물 사이에 배치되는 반도체 발광소자; 및 상기 반도체 발광소자를 감싸도록 형성된 형광체를 포함하는 수지로 형성되는 형광층을 포함하고, 상기 형광층은 상기 절연부재 구조물 간의 간극을 충전하는 것을 특징으로 한다.According to an aspect of the present invention, there is provided a vehicle lamp including a light source unit for emitting light, comprising: a base substrate; An insulation member structure disposed on the base substrate; A semiconductor light emitting device assembled on the base substrate and disposed between the insulating member structures; And a fluorescent layer formed of a resin including a phosphor formed to surround the semiconductor light emitting device, wherein the fluorescent layer fills a gap between the insulating member structures.
일 실시예에서, 상기 절연부재 구조물은 서로 상하로 배치되고 마주하는 제1면과 제2면을 가지고, 상기 제1면은 상기 베이스 기판과 접합되고, 상기 제2면은 상기 제1면의 면적보다 더 좁게 형성되어 상기 반도체 발광소자를 향하는 경사면이 형성되는 것을 특징으로 한다. In one embodiment, the insulating member structure has a first surface and a second surface disposed facing each other up and down, the first surface is bonded to the base substrate, the second surface is the area of the first surface It is formed narrower than that characterized in that the inclined surface toward the semiconductor light emitting device is formed.
일 실시예에서, 상기 형광층의 수지는 열경화 가능한 소재로 형성되는 것을 특징으로 한다. In one embodiment, the resin of the fluorescent layer is characterized in that formed of a thermosetting material.
일 실시예에서, 상기 형광층 100 중량부당 상기 형광체의 함량은 50 중량부 이상인 것을 특징으로 한다.In one embodiment, the content of the phosphor per 100 parts by weight of the fluorescent layer is characterized in that more than 50 parts by weight.
또한, 차량용 램프의 제조방법에 있어서, 베이스 기판에 절연부재 구조물 및 반도체 발광소자를 배치하는 단계; 형광체를 포함하는 수지로 상기 절연부재 구조물 간의 간극을 충전하여 미경화 형광층을 형성하는 단계; 및 상기 미경화 형광층을 소정온도에서 열경화하여 형광층을 형성하는 단계를 포함하는 것을 특징으로 한다. In addition, the method of manufacturing a vehicle lamp, comprising the steps of: disposing an insulating member structure and a semiconductor light emitting element on the base substrate; Filling the gap between the insulation member structures with a resin including a phosphor to form an uncured phosphor layer; And thermosetting the uncured fluorescent layer at a predetermined temperature to form a fluorescent layer.
일 실시예에서, 상기 미경화 형광층을 형성하는 단계는 스크린 프린팅으로 형광체를 포함하는 수지를 상기 절연부재 구조물 간의 간극에 충전하는 것을 특징으로 한다. In one embodiment, the step of forming the uncured fluorescent layer is characterized in that the screen printing to fill the gap between the insulating member structure with a resin containing a phosphor.
일 실시예에서, 상기 형광층을 형성하는 단계의 소정온도는 120 내지 190 ℃ 범위인 것을 특징으로 한다.In one embodiment, the predetermined temperature of the step of forming the fluorescent layer is characterized in that the range of 120 to 190 ℃.
본 발명에 따른 차량용 램프 및 제조방법에 따르면, 베이스 기판 상에 배치되는 절연부재 구조물 사이에 반도체 발광소자를 구비하고, 반도체 발광소자를 감싸면서 상기 절연부재 구조물 사이의 간극을 충전하는 형광층을 포함하여 고가의 형광체의 소모량을 줄이는 효과가 있으므로 차량용 램프의 제조 단가를 절감할 수 있다.According to the vehicle lamp and the manufacturing method according to the present invention, comprising a semiconductor light emitting device between the insulating member structure disposed on the base substrate, and includes a fluorescent layer for filling the gap between the insulating member structure while surrounding the semiconductor light emitting device. Therefore, it is possible to reduce the manufacturing cost of the vehicle lamp because it has the effect of reducing the consumption of expensive phosphors.
도 1a는 차량용 램프의 일 실시예로서 리어 램프를 도시하는 개념도이다.1A is a conceptual diagram illustrating a rear lamp as an embodiment of a vehicle lamp.
도 1b는 도 1a의 리어 램프가 발광된 상태를 나타내는 확대도이다.FIG. 1B is an enlarged view illustrating a state in which the rear lamp of FIG. 1A emits light.
도 2는 본 발명에 따른 차량용 램프의 광원부를 설명하기 위한 사시도이다.2 is a perspective view for explaining a light source unit of a vehicle lamp according to the present invention.
도 3는 도 2에서 살펴본 차량용 램프의 광원부를 A-A 면에서 바라본 단면도이다.3 is a cross-sectional view of the light source unit of the vehicle lamp illustrated in FIG. 2 as viewed from the A-A plane.
도 4는 본 발명에 따른 광원부를 구비하는 차량용 램프의 다른 실시예를 나타내는 단면도이다.4 is a cross-sectional view showing another embodiment of a vehicle lamp including a light source unit according to the present invention.
도 5는 본 발명에 따른 광원부를 구비하는 차량용 램프의 제조방법을 나타낸 단면도들이다.5 is a cross-sectional view illustrating a method of manufacturing a vehicle lamp having a light source unit according to the present invention.
이하, 첨부된 도면을 참조하여 본 명세서에 개시된 실시예를 상세히 설명하되, 도면 부호에 관계없이 동일하거나 유사한 구성요소는 동일한 참조 번호를 부여하고 이에 대한 중복되는 설명은 생략하기로 한다. 이하의 설명에서 사용되는 구성요소에 대한 접미사 "부"는 명세서 작성의 용이함만이 고려되어 부여되거나 혼용되는 것으로서, 그 자체로 서로 구별되는 의미 또는 역할을 갖는 것은 아니다. 또한, 본 명세서에 개시된 실시예를 설명함에 있어서 관련된 공지 기술에 대한 구체적인 설명이 본 명세서에 개시된 실시예의 요지를 흐릴 수 있다고 판단되는 경우 그 상세한 설명을 생략한다. 또한, 첨부된 도면은 본 명세서에 개시된 실시예를 쉽게 이해할 수 있도록 하기 위한 것일 뿐, 첨부된 도면에 의해 본 명세서에 개시된 기술적 사상이 제한되는 것으로 해석되어서는 아니 됨을 유의해야 한다.DETAILED DESCRIPTION Hereinafter, exemplary embodiments disclosed herein will be described in detail with reference to the accompanying drawings, and the same or similar components will be given the same reference numerals regardless of the reference numerals, and redundant description thereof will be omitted. The suffix "part" for the components used in the following description is given or mixed in consideration of ease of specification, and does not have a meaning or role distinguished from each other. In addition, in the description of the embodiments disclosed herein, if it is determined that the detailed description of the related known technology may obscure the gist of the embodiments disclosed herein, the detailed description thereof will be omitted. In addition, it is to be noted that the accompanying drawings are only for easily understanding the embodiments disclosed herein and are not to be construed as limiting the technical spirit disclosed herein by the accompanying drawings.
또한, 층, 영역 또는 기판과 같은 요소가 다른 구성요소 "상(on)"에 존재하는 것으로 언급될 때, 이것은 직접적으로 다른 요소 상에 존재하거나 또는 그 사이에 중간 요소가 존재할 수도 있다는 것을 이해할 수 있을 것이다.Also, when an element such as a layer, region or substrate is referred to as being on another component "on", it is to be understood that it may be directly on another element or there may be an intermediate element in between. There will be.
본 명세서에서 설명되는 차량용 램프에는 전조등(헤드 램프), 미등, 차폭등, 안개등, 방향지시등, 제동등(브레이크 램프), 비상등, 후진등(테일 램프) 등이 포함될 수 있다. 그러나, 본 명세서에 기재된 실시예에 따른 구성은 발광이 가능한 장치이기만 하면 추후 개발되는 새로운 제품형태에도 적용될 수도 있음은 본 기술분야의 당업자라면 쉽게 알 수 있을 것이다.Vehicle lamps described herein may include headlights (headlamps), taillights, traffic lights, fog lights, turn signals, brake lights (brake lamps), emergency lights, reversing lights (tail lamps), and the like. However, it will be readily apparent to those skilled in the art that the configuration according to the embodiments described herein may be applied to a new product form that will be developed later, as long as the device can emit light.
도 1a는 차량용 램프의 일 실시예로서 리어 램프를 도시하는 개념도이고, 도 1b는 도 1a의 리어 램프가 발광된 상태를 나타내는 확대도이다.1A is a conceptual diagram illustrating a rear lamp as an example of a vehicle lamp, and FIG. 1B is an enlarged view illustrating a state in which the rear lamp of FIG. 1A is emitted.
도 1a를 참조하면, 차량의 리어 램프(100)는 차량의 후면의 양측에 배치되며, 이를 통하여 차량의 후면 외관을 형성한다. Referring to FIG. 1A, rear lamps 100 of a vehicle are disposed at both sides of a rear surface of a vehicle, thereby forming a rear exterior of the vehicle.
상기 리어 램프(100)는 미등, 방향지시등, 브레이크 램프, 비상등 및 테일 램프 등이 패키지 형태로 조합된 램프가 될 수 있다. 즉, 상기 리어 램프(100)는 차량의 제어에 따라 선택적으로 발광하는 복수의 램프들을 구비하게 된다.The rear lamp 100 may be a lamp in which a tail lamp, a direction indicator lamp, a brake lamp, an emergency lamp, and a tail lamp are combined in a package form. That is, the rear lamp 100 includes a plurality of lamps that selectively emit light under the control of the vehicle.
이 경우에, 상기 복수의 램프들 중 적어도 하나는 기 설정된 모양(shape)을 발광하도록 형성될 수 있다. 이러한 예로서, 일 예로서, 브레이크 램프(100a)는 수평방향으로 길게 형성되며, 적어도 일부분에서 상하방향으로 커브드(curved)되도록 형성되어, 브레이크 램프(100a)의 형상에 대응되는 모양을 발광하도록 형성될 수 있다. 나아가, 상기 브레이크 램프는 상기 차량의 전방을 향하여 굽어질 수 있다. 이와 같은 3차원 형태의 복잡한 형상은 복수의 발광영역에 의하여 구현될 수 있다. In this case, at least one of the plurality of lamps may be formed to emit a predetermined shape. In this example, as an example, the brake lamp 100a is elongated in the horizontal direction, and is curved to be curved in at least a portion of the brake lamp 100a so as to emit light corresponding to the shape of the brake lamp 100a. Can be formed. Furthermore, the brake lamp may be bent toward the front of the vehicle. Such a complex shape having a three-dimensional shape may be implemented by a plurality of light emitting regions.
도 1b를 참조하면, 형상이 서로 다른 발광영역이 서로 조합되어, 상기 기설정된 모양을 구현하게 된다. Referring to FIG. 1B, light emitting regions having different shapes are combined with each other to realize the predetermined shape.
상기 발광영역에는 반도체 발광소자에 의하여 구현되는 광원부(1000)가 배치될 수 있다. 상기 광원부(1000)는 프레임을 통하여 차체에 고정될 수 있으며, 상기 프레임에는 광원부(1000)를 배치하기 위한 베이스 기판일 수 있다.A light source unit 1000 implemented by a semiconductor light emitting device may be disposed in the light emitting area. The light source unit 1000 may be fixed to the vehicle body through a frame, and the frame may be a base substrate for disposing the light source unit 1000.
상기 광원부는 외력에 의하여 휘어질 수 있는, 구부러질 수 있는, 비틀어질 수 있는, 접힐 수 있는, 말려질 수 있는 플렉서블 광원부가 될 수 있다. 또한, 상기 광원부는 상기 발광영역에 해당하는 발광면을 가지는 면광원으로 구현될 수 있다.The light source portion can be a flexible light source portion that can be bent, twisted, foldable, rollable, which can be bent by an external force. In addition, the light source unit may be implemented as a surface light source having a light emitting surface corresponding to the light emitting area.
이 경우에, 상기 광원부(1000)는 복수로 구비되어 상기 발광영역의 각각에 배치되거나, 하나의 광원부가 상기 모양 전체를 구현하도록 형성될 수 있다.In this case, the light source unit 1000 may be provided in plural and disposed in each of the light emitting regions, or one light source unit may be formed to implement the entire shape.
상기 광원부(1000)의 화소는 반도체 발광소자에 의하여 구현될 수 있다. 본 발명에서는 전류를 빛으로 변환시키는 반도체 발광소자의 일 종류로서 발광 다이오드(Light Emitting Diode: LED)를 예시한다. 상기 발광 다이오드는 수 내지 수십 마이크로미터 크기로 구성되는 반도체 발광소자가 될 수 있으며, 이를 통하여 상기 3차원의 공간상에서도 화소의 역할을 할 수 있게 된다.The pixel of the light source unit 1000 may be implemented by a semiconductor light emitting device. The present invention exemplifies a light emitting diode (LED) as one type of semiconductor light emitting device for converting current into light. The light emitting diode may be a semiconductor light emitting device having a size of several micrometers to several tens of micrometers, and thus may serve as a pixel in the three-dimensional space.
보다 구체적으로, 본 발명에 따른 광원부에 대하여 살펴보면, 본 발명에 따른 광원부는 기판, 기판의 일면에 배치되는 복수의 반도체 발광소자들, 상기 반도체 발광소자를 감싸도록 형성되는 절연부재, 상기 반도체 발광소자들의 어느 일부와 전기적으로 연결되며 상기 절연부재의 일면에 배치되는 제1전극 및 제2전극을 포함하도록 구성될 수 있다.More specifically, referring to the light source unit according to the present invention, the light source unit according to the present invention, a plurality of semiconductor light emitting elements disposed on one surface of the substrate, an insulating member formed to surround the semiconductor light emitting element, the semiconductor light emitting element It may be configured to include a first electrode and a second electrode that is electrically connected to any part of the insulating member disposed on one surface of the insulating member.
본 발명은, 차량용 램프에 있어서 차량용 램프의 제조에서 고가의 형광체의 소모량을 감소하여 제조 단가가 절감된 차량용 램프 및 차량용 램프의 제조방법을 제공하기 위한 것으로서, 이하, 첨부된 도면과 함께, 보다 구체적으로 살펴본다. The present invention is to provide a method for manufacturing a vehicle lamp and a vehicle lamp in which the manufacturing cost is reduced by reducing the consumption of expensive phosphors in the manufacture of a vehicle lamp in the vehicle lamp, more specifically, in conjunction with the accompanying drawings, Take a look.
도 2는 본 발명에 따른 차량용 램프의 광원부를 설명하기 위한 사시도이고, 도 3은 도 2에서 살펴본 차량용 램프의 광원부를 A-A 면에서 바라본 단면도이다.FIG. 2 is a perspective view illustrating a light source unit of a vehicle lamp according to the present invention, and FIG. 3 is a cross-sectional view of the light source unit of the vehicle lamp as seen in FIG.
도 2와 도 3의 도시에 의하면, 차량용 램프의 광원부(1000)는 베이스 기판(1010), 절연부재 구조물(1020), 반도체 발광소자(1030), 형광층(1040) 및 광학필름(1050)을 포함할 수 있다.2 and 3, the light source unit 1000 of the vehicle lamp includes a base substrate 1010, an insulating member structure 1020, a semiconductor light emitting device 1030, a fluorescent layer 1040, and an optical film 1050. It may include.
베이스 기판(1010)은 다양한 재질로 이루어질 수 있으며, 플렉서블(flexible)하거나 또는 인플렉서블(inflexible)하게 이루어질 수 있다.The base substrate 1010 may be formed of various materials, and may be made flexible or inflexible.
베이스 기판(1010)이 플렉서블하게 이루어지는 경우, 베이스 기판(1010)은 유리나 폴리이미드(PI, Polyimide)를 포함할 수 있다. 이외에도 절연성이 있고, 유연성 있는 재질이면, 예를 들어 PEN(Polyethylene Naphthalate), PET(Polyethylene Terephthalate) 등 어느 것이라도 사용될 수 있다.When the base substrate 1010 is made flexible, the base substrate 1010 may include glass or polyimide (PI). In addition, any material such as polyethylene naphthalate (PEN) and polyethylene terephthalate (PET) may be used as long as it is an insulating and flexible material.
베이스 기판(1010)의 일면에는 반도체 발광소자(1030)과 연결되도록 형성된 제1전극 및 제2전극(미도시)가 배치될 수 있다. 이를 통하여 상기 제1전극 및 제2전극과 반도체 발광소자(150)는 전기적으로 연결될 수 있다.A first electrode and a second electrode (not shown) formed to be connected to the semiconductor light emitting device 1030 may be disposed on one surface of the base substrate 1010. Through this, the first electrode and the second electrode and the semiconductor light emitting device 150 may be electrically connected.
또한, 상기 제1전극 및 제2전극과 반도체 발광소자(1030)는 전도성을 가지는 접착제(미도시)로 물리적으로 접촉되어 전기적 연결이 형성될 수 있다. 상기 접착제는 금속 페이스트(실버 페이스트, 주석 페이스트) 및 솔더로 형성할 수 있다. 상기 접착제에 대한 열거 사항은 예시적일 뿐 본 발명이 이에 한정되는 것은 아니다.In addition, the first electrode and the second electrode and the semiconductor light emitting device 1030 may be physically contacted with an adhesive (not shown) having conductivity to form an electrical connection. The adhesive may be formed of a metal paste (silver paste, tin paste) and solder. The enumeration of the adhesive is merely illustrative and the present invention is not limited thereto.
절연부재 구조물(1020)은 베이스 기판(1010) 상에 배치될 수 있다. 연부재 구조물(1020)은 필름형태로 형성되어 베이스 기판(1010) 상에 부착되는 것으로 반도체 발광소자(1030)이 배치되는 구역에 개구가 형성될 수 있다. 상기 개구는 절연부재 구조물(1020) 간의 간극으로 명명될 수 있다. 나아가, 절연부재 구조물(1020)은 고분자 수지로 이루어질 수 있으며, 바람직하게는 폴리카보네이트(PC)로 형성될 수 있다. The insulating member structure 1020 may be disposed on the base substrate 1010. The soft member structure 1020 may be formed in a film shape and attached to the base substrate 1010 so that an opening may be formed in a region where the semiconductor light emitting device 1030 is disposed. The opening may be referred to as a gap between the insulating member structures 1020. In addition, the insulating member structure 1020 may be made of a polymer resin, preferably may be formed of polycarbonate (PC).
덧붙여, 절연부재 구조물(1020)은 반사도가 높은 소재로 형성되어 복수의 반도체 발광소자(1030) 사이의 격벽 역할을 수행하면서 광원부(1000)의 발광 효율을 개선할 수도 있다. 일 실시예에서, 절연부재 구조물(1020)은 광원부(1000)의 발광 효율을 개선하게 위하여 반도체 발광소자(1030)에서 방출하는 광을 반사하도록 입자를 포함할 수도 있다. 바람직하게, 상기 입자는 타이타늄산화물(TiO2) 입자일 수 있다.In addition, the insulating member structure 1020 may be formed of a material having high reflectivity to improve the luminous efficiency of the light source unit 1000 while serving as a partition wall between the plurality of semiconductor light emitting devices 1030. In one embodiment, the insulating member structure 1020 may include particles to reflect light emitted from the semiconductor light emitting device 1030 to improve the light emitting efficiency of the light source unit (1000). Preferably, the particles may be titanium oxide (TiO 2 ) particles.
한편, 반도체 발광소자(1030)는 수 내지 수십 마이크로미터 크기로 구성될 수 있다. 상세하게, 반도체 발광소자(1030)는 베이스 기판(1010) 상에 조립되고, 절연부재 구조물(1020) 사이에 배치될 수 있다. 반도체 발광소자(1030)는 제1도전형 전극, 상기 제1도전형 전극이 형성되는 제1도전형 반도체층, 상기 제1도전형 반도체층 상에 형성된 활성층, 상기 활성층 상에 형성된 제2도전형 반도체층 및 상기 제2도전형 반도체층 상에 형성된 제2도전형 전극를 포함할 수 있다.Meanwhile, the semiconductor light emitting device 1030 may have a size of several micrometers to several tens of micrometers. In detail, the semiconductor light emitting device 1030 may be assembled on the base substrate 1010 and disposed between the insulating member structures 1020. The semiconductor light emitting device 1030 includes a first conductive electrode, a first conductive semiconductor layer on which the first conductive electrode is formed, an active layer formed on the first conductive semiconductor layer, and a second conductive type formed on the active layer. The semiconductor layer may include a second conductive electrode formed on the second conductive semiconductor layer.
상기 제1도전형 전극 및 상기 제1도전형 반도체층은 각각 p형 전극 및 p형 반도체층이 될 수 있으며, 상기 제2도전형 전극 및 제2도전형 반도체층은 각각 n형 전극 및 n형 반도체층이 될 수 있다. 다만, 본 발명은 반드시 이에 한정되는 것은 아니며, 제1도전형이 n형이 되고 제2도전형이 p형이 되는 예시도 가능하다.The first conductive electrode and the first conductive semiconductor layer may be p-type electrodes and p-type semiconductor layers, respectively, and the second conductive electrode and second conductive semiconductor layer may be n-type electrodes and n-type, respectively. It can be a semiconductor layer. However, the present invention is not necessarily limited thereto, and an example in which the first conductive type is n-type and the second conductive type is p-type is also possible.
또한, 형광층(1040)은 반도체 발광소자(1030)을 감싸도록 형성될 수 있다. 또한, 형광층(1040)은 절연부재 구조물(1020) 간의 간극을 충전하도록 형성될 수 있다. In addition, the fluorescent layer 1040 may be formed to surround the semiconductor light emitting device 1030. In addition, the fluorescent layer 1040 may be formed to fill a gap between the insulating member structures 1020.
나아가, 형광층(1040)은 형광체를 포함하는 수지로 형성될 수 있다. 일 실시예에서 상기 형광체는 YAG:Ce 계통의 형광체를 포함하여, 청색광을 방출하는 반도체 발광소자의 광을 백색광으로 전환할 수 있다. 또한, 다른 실시예에서는 상기 형광체는 청색광을 다른 색상으로 변환시키기 위해 적색 형광체 및 녹색 형광체로 형성될 수 있다.In addition, the fluorescent layer 1040 may be formed of a resin including a phosphor. In one embodiment, the phosphor may include a YAG: Ce-based phosphor to convert light of a semiconductor light emitting device emitting blue light into white light. In another embodiment, the phosphor may be formed of a red phosphor and a green phosphor to convert blue light into another color.
한편, 형광층(1040)을 형성하는 수지는 열경화 가능한 소재로 형성될 수 있다. 바람직하게 상기 수지는 실리콘 수지로 형성될 수 있다. 여기서 실리콘 수지는 분자구조에 규소와 산소가 번갈아 있는 실록산 결합(Si－O결합)을 포함하는 수지이다.Meanwhile, the resin for forming the fluorescent layer 1040 may be formed of a thermosetting material. Preferably the resin may be formed of a silicone resin. Here, the silicone resin is a resin containing siloxane bonds (Si-O bonds) in which silicon and oxygen are alternated in a molecular structure.
덧붙여, 형광층(1040) 중에 상기 형광체는 50 중량부 이상의 함량으로 형성될 수 있다. 즉, 형광층(1040) 100 중량부당 상기 형광체의 함량은 50 중량부 이상일 수 있다. 이에, 반도체 발광소자(1030)에서 방출되는 광이 형광체를 통하여 색변환 될 때, 형광체에 따른 색온도 및 색변환이 충분히 이루어질 수 있다. 즉, 상기 형광체의 함량이 형광층(1040) 전체의 중량부 중 50 중량부 미만일 경우에는 반도체 발광소자(1030)에서 방출되는 광의 색변환이 충분히 이루어지지 않을 수 있다.In addition, the phosphor in the phosphor layer 1040 may be formed in an amount of 50 parts by weight or more. That is, the content of the phosphor per 100 parts by weight of the fluorescent layer 1040 may be 50 parts by weight or more. Thus, when the light emitted from the semiconductor light emitting device 1030 is color converted through the phosphor, the color temperature and color conversion according to the phosphor can be sufficiently made. That is, when the content of the phosphor is less than 50 parts by weight of the total weight of the fluorescent layer 1040, the color conversion of the light emitted from the semiconductor light emitting device 1030 may not be sufficient.
일 실시예에서, 반도체 발광소자(1030)에서 방출되는 광이 형광층(1040)을 통하여 색변환이 이루어지고, 방출면으로 균일한 광을 얻기 위해 광학필름(1050)을 더 배치할 수 있다.In one embodiment, the light emitted from the semiconductor light emitting device 1030 is a color conversion is performed through the fluorescent layer 1040, the optical film 1050 may be further disposed to obtain a uniform light to the emission surface.
일 실시예에서, 광학필름(1050)은 확산판(1051), 광학시트(1052) 및 액정표시장치(LCD)(1053)를 포함할 수 있다. 즉, 확산판(1051), 광학시트(1052) 및 액정표시장치(1053)가 적층된 광학필름(1050)을 반도체 발광소자(1030) 상에 배치시켜 차량용 램프(1000)를 형성할 수 있다. 구체적으로 확산판(1051)은 점 광원에서 나오는 빛을 면을 따라 확산시켜 화면 전체적으로 색상 및 밝기가 균일하게 보이도록 해 주는 반투명판으로 형성될 수 있다. 또한, 광학시트(1052)는 고휘도 필름 또는 복합 시트 중 어느 하나로 형성되어 광의 방출면으로 고품질의 광이 방출될 수 있도록 형성된다. In one embodiment, the optical film 1050 may include a diffusion plate 1051, an optical sheet 1052, and a liquid crystal display (LCD) 1053. That is, the vehicle lamp 1000 may be formed by disposing the optical film 1050 on which the diffusion plate 1051, the optical sheet 1052, and the liquid crystal display device 1053 are stacked on the semiconductor light emitting device 1030. In more detail, the diffusion plate 1051 may be formed as a translucent plate that diffuses light emitted from a point light source along a surface so that color and brightness are uniformly displayed on the entire screen. In addition, the optical sheet 1052 is formed of any one of a high brightness film or a composite sheet is formed so that high quality light can be emitted to the light emitting surface.
이하 설명되는 다른 실시예에서는 앞선 예와 동일 또는 유사한 구성에 대해서는 동일, 유사한 참조번호가 부여되고, 그 설명은 처음 설명으로 갈음된다.In other embodiments described below, the same or similar reference numerals are given to the same or similar configurations as the foregoing examples, and the description is replaced with the first description.
도 4는 본 발명에 따른 광원부를 구비하는 차량용 램프의 다른 실시예를 나타내는 단면도이다.4 is a cross-sectional view showing another embodiment of a vehicle lamp including a light source unit according to the present invention.
도 4를 참조하면, 차량용 램프의 광원부는 반도체 발광소자(1030)에서 방출되는 광을 발광면으로 더 많은 광이 방출되도록 절연부재 구조물(1020a)의 구조를 전술된 도 3과 달리할 수도 있다.Referring to FIG. 4, the light source unit of the vehicle lamp may differ from the structure of the insulating member structure 1020a so that more light is emitted from the semiconductor light emitting device 1030 to the light emitting surface.
상세하게, 절연부재 구조물(1020a)은 서로 상하로 배치되는 마주하는 제1면과 제2면을 가지고, 상기 제1면은 베이스 기판(1010)과 접합되고, 상가 제2면은 상기 제2면의 면적보다 좁게 형성될 수 있다. 이에, 절연부재 구조물(1020a)의 단면은 도시와 같이 사다리꼴의 형태로 형성될 수 있다. 즉, 절연부재 구조물(1020a)는 반도체 발광소자(1030)를 향하는 경사면으로 형성될 수 있다. 이에, 반도체 발광소자(1030)에서 방출되는 광이 경사면에서 반사될 수 있으므로, 도 3의 차량용 램프보다 발광효율이 더 증가될 수 있다.In detail, the insulating member structure 1020a has opposing first and second surfaces disposed up and down with each other, the first surface being bonded to the base substrate 1010, and the second and second surfaces being the second surface. It may be formed narrower than the area of. Thus, the cross section of the insulating member structure 1020a may be formed in the shape of a trapezoid as shown. That is, the insulating member structure 1020a may be formed as an inclined surface facing the semiconductor light emitting device 1030. Accordingly, since the light emitted from the semiconductor light emitting device 1030 may be reflected on the inclined surface, the light emission efficiency may be further increased than the vehicle lamp of FIG. 3.
도 5는 본 발명에 따른 광원부를 구비하는 차량용 램프의 제조방법을 나타낸 단면도들이다.5 is a cross-sectional view illustrating a method of manufacturing a vehicle lamp having a light source unit according to the present invention.
도 5을 참조하면, 본 발명에 따른 광원부를 구비하는 차량용 램프의 제조방법은 도 5의 (a) 및 (b)를 따른다. Referring to FIG. 5, a method of manufacturing a vehicle lamp having a light source unit according to the present disclosure follows FIGS. 5A and 5B.
도 5의 (a)에서는 베이스 기판에 절연부재 구조물(1020) 및 반도체 발광소자(1030)를 배치하는 단계 및 형광체를 포함하는 수지(1040")로 상기 절연부재 구조물(1020) 간의 간극을 충전하여 미경화 형광층(1040')을 형성하는 단계를 도시하였다.In FIG. 5A, the insulating member structure 1020 and the semiconductor light emitting device 1030 are disposed on a base substrate, and the gap between the insulating member structures 1020 is filled with a resin 1040 ″ including a phosphor. A step of forming the uncured fluorescent layer 1040 'is shown.
상세하게, 베이스 기판(1010)에 절연부재 구조물(1020) 및 반도체 발광소자(1030)를 배치할 수 있다. 이때, 절연부재 구조물(1020) 및 반도체 발광소자(1030)의 배치 순서는 편의에 따라 변경될 수 있다. 즉, 베이스 기판(1010)에 절연부재 구조물(1020)이 배치된 다음 반도체 발광소자(1030)가 배치될 수 있다. 다른 실시예에서는 베이스 기판(1010)에 반도체 발광소자(1030)가 배치된 다음 절연부재 구조물(1020)이 배치되는 실시예도 가능하다.In detail, the insulating member structure 1020 and the semiconductor light emitting device 1030 may be disposed on the base substrate 1010. In this case, the arrangement order of the insulating member structure 1020 and the semiconductor light emitting device 1030 may be changed for convenience. That is, the insulating member structure 1020 may be disposed on the base substrate 1010, and then the semiconductor light emitting device 1030 may be disposed. In another embodiment, an embodiment in which the semiconductor light emitting device 1030 is disposed on the base substrate 1010 and then the insulating member structure 1020 is disposed.
이때, 절연부재 구조물(1020)이 사이에는 반도체 발광소자(1030)이 위치할 수 있고, 절연부재 구조물(1020)들 사이에는 간극이 형성된다. 이에, 마스킹부(11) 개방부(12)를 포함하는 스크린마스크(10)에 페이스트 형태의 형광체를 포함하는 수지(1040")가 도포될 수 있다. 다음으로, 스퀴지(Squeegee)(20)를 스크린 마스크(10)에 밀착 이동시켜 절연부재 구조물(1020)들 사이에는 간극에 형광체를 포함하는 수지(1040")가 주입되어 미경화 형광층(1040')이 형성될 수 있다. 즉, 미경화 형광체층(1040')은 스크린 프린팅으로 형성될 수 있다. 이때, 형광체를 포함하는 수지(1040")는 절연부재 구조물(1020)들 사이에 스크린 프린팅으로 메워질 수 있는 적절한 점도를 가질 수 있다.In this case, the semiconductor light emitting device 1030 may be positioned between the insulating member structures 1020, and a gap is formed between the insulating member structures 1020. Thus, a resin 1040 "including a paste-shaped phosphor may be applied to the screen mask 10 including the masking part 11 and the opening 12. Next, the squeegee 20 may be applied. The non-cured fluorescent layer 1040 ′ may be formed by injecting a resin 1040 ″ including a phosphor into the gap between the insulating member structures 1020 by closely moving the screen mask 10. That is, the uncured phosphor layer 1040 ′ may be formed by screen printing. In this case, the resin 1040 ″ including the phosphor may have an appropriate viscosity that may be filled by screen printing between the insulating member structures 1020.
이어서, 도 5의 (b)에서는 미경화 형광층(1040')은 소정온도에서 열경화되어 형광층(1040)을 형성할 수 있다. 이때 소정온도는 형광체를 포함하는 수지(1040")가 충분히 경화될 수 있는 120 내지 190 ℃ 범위일 수 있다. 미경화 형광층(1040')의 열경화 온도가 190 ℃를 초과할 경우에는 절연부재 구조물(1020)의 변형이 유발될 수도 있다. 즉, 형광층(1040)을 형성하는 단계는 미경화 형광층(1040')이 충분히 경화되면서 베이스 기판(1010) 또는 절연부재 구조물(1020)이 열에 의하여 변형되지 않는 온도 범위에서 수행될 수 있다. Subsequently, in FIG. 5B, the uncured fluorescent layer 1040 ′ may be thermally cured at a predetermined temperature to form the fluorescent layer 1040. In this case, the predetermined temperature may be in a range of 120 to 190 ° C. in which the resin 1040 ″ including the phosphor may be sufficiently cured. When the thermosetting temperature of the uncured fluorescent layer 1040 ′ exceeds 190 ° C., the insulating member Deformation of the structure 1020 may be caused, that is, forming the fluorescent layer 1040 may cause the base substrate 1010 or the insulating member structure 1020 to heat up while the uncured fluorescent layer 1040 'is sufficiently cured. It can be carried out in a temperature range that is not deformed by.
발명은 본 발명의 정신 및 필수적 특징을 벗어나지 않는 범위에서 다른 특정한 형태로 구체화될 수 있음은 당업자에게 자명하다. It is apparent to those skilled in the art that the invention can be embodied in other specific forms without departing from the spirit and essential features of the invention.
이상에서 설명한 반도체 발광소자를 이용한 차량용 램프는 위에서 설명된 실시예들의 구성과 방법에 한정되는 것이 아니라, 상기 실시예들은 다양한 변형이 이루어질 수 있도록 각 실시예들의 전부 또는 일부가 선택적으로 조합되어 구성될 수도 있다.The vehicle lamp using the semiconductor light emitting device described above is not limited to the configuration and method of the above-described embodiments, the above embodiments may be configured by selectively combining all or some of the embodiments so that various modifications may be made. It may be.
본 발명은 차량용 램프에 관한 것으로 특히, 반도체 발광소자를 이용한 차량용 램프 산업상 이용가능하다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vehicle lamp, and in particular, can be used in the vehicle lamp industry using semiconductor light emitting devices.

Claims (7)

  1. 빛을 발광하는 광원부를 구비하는 차량용 램프에 있어서, In the vehicle lamp comprising a light source unit for emitting light,
    상기 광원부는 The light source unit
    베이스 기판;A base substrate;
    상기 베이스 기판 상에 배치되는 절연부재 구조물;An insulation member structure disposed on the base substrate;
    상기 베이스 기판상에 조립되고, 상기 절연부재 구조물 사이에 배치되는 반도체 발광소자; 및A semiconductor light emitting device assembled on the base substrate and disposed between the insulating member structures; And
    상기 반도체 발광소자를 감싸도록 형성된 형광체를 포함하는 수지로 형성되는 형광층을 포함하고,Comprising a fluorescent layer formed of a resin containing a phosphor formed to surround the semiconductor light emitting device,
    상기 형광층은 상기 절연부재 구조물 간의 간극을 충전하는 것을 특징으로 하는 차량용 램프.The fluorescent layer is a vehicle lamp, characterized in that filling the gap between the insulating member structure.
  2. 제1항에 있어서,The method of claim 1,
    상기 절연부재 구조물은 서로 상하로 배치되고 마주하는 제1면과 제2면을 가지고,The insulating member structure has a first surface and a second surface disposed facing each other up and down,
    상기 제1면은 상기 베이스 기판과 접합되고,The first surface is bonded to the base substrate,
    상기 제2면은 상기 제1면의 면적보다 더 좁게 형성되어 상기 반도체 발광소자를 향하는 경사면이 형성되는 것을 특징으로 하는 차량용 램프.The second surface of the vehicle lamp, characterized in that the narrower than the area of the first surface is formed inclined surface toward the semiconductor light emitting device.
  3. 제1항에 있어서,The method of claim 1,
    상기 형광층의 수지는 열경화 가능한 소재로 형성되는 것을 특징으로 하는 차량용 램프.The resin of the fluorescent layer is a vehicle lamp, characterized in that formed of a thermosetting material.
  4. 제1항에 있어서,The method of claim 1,
    상기 형광층 100 중량부당 상기 형광체의 함량은 50 중량부 이상인 것을 특징으로 하는 차량용 램프.The vehicle lamp, characterized in that the content of the phosphor per 100 parts by weight of the fluorescent layer is 50 parts by weight or more.
  5. 베이스 기판에 절연부재 구조물 및 반도체 발광소자를 배치하는 단계;Disposing an insulating member structure and a semiconductor light emitting device on the base substrate;
    형광체를 포함하는 수지로 상기 절연부재 구조물 간의 간극을 충전하여 미경화 형광층을 형성하는 단계; 및Filling the gap between the insulation member structures with a resin including a phosphor to form an uncured phosphor layer; And
    상기 미경화 형광층을 소정온도에서 열경화하여 형광층을 형성하는 단계를 포함하는 것을 특징으로 하는 차량용 램프의 제조방법.And thermally curing the uncured fluorescent layer at a predetermined temperature to form a fluorescent layer.
  6. 제5항에 있어서,The method of claim 5,
    상기 미경화 형광층을 형성하는 단계는 스크린 프린팅으로 형광체를 포함하는 수지를 상기 절연부재 구조물의 간극에 충전하는 것을 특징으로 하는 차량용 램프의 제조방법.The forming of the uncured fluorescent layer may include screen printing to fill a gap between the insulation member structure and a resin including a phosphor.
  7. 제5항에 있어서,The method of claim 5,
    상기 형광층을 형성하는 단계의 소정온도는 120 내지 190 ℃ 범위인 것을 특징으로 하는 차량용 램프의 제조방법.The predetermined temperature of the step of forming the fluorescent layer is a manufacturing method of a vehicle lamp, characterized in that 120 to 190 ℃ range.
PCT/KR2018/008641 2018-07-23 2018-07-30 Vehicle lamp using semiconductor light-emitting device WO2020022544A1 (en)

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