WO2012081875A1 - Transparent led chip package and led lighting including same - Google Patents

Transparent led chip package and led lighting including same Download PDF

Info

Publication number
WO2012081875A1
WO2012081875A1 PCT/KR2011/009547 KR2011009547W WO2012081875A1 WO 2012081875 A1 WO2012081875 A1 WO 2012081875A1 KR 2011009547 W KR2011009547 W KR 2011009547W WO 2012081875 A1 WO2012081875 A1 WO 2012081875A1
Authority
WO
WIPO (PCT)
Prior art keywords
led chip
chip package
led
transparent
present
Prior art date
Application number
PCT/KR2011/009547
Other languages
French (fr)
Korean (ko)
Inventor
김영철
Original Assignee
소닉스자펜 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소닉스자펜 주식회사 filed Critical 소닉스자펜 주식회사
Publication of WO2012081875A1 publication Critical patent/WO2012081875A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V3/00—Globes; Bowls; Cover glasses
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to an LED chip package and an LED lighting lamp including the same, and more particularly, to provide a wide light source capable of emitting 360 degrees from the LED, a transparent LED chip package that can effectively emit heat generated from the LED to the outside And it relates to an LED lamp comprising the same.
  • a lead frame (not shown) is formed on an injection structure 1 made of reinforced polymer (PPA, Poly Phthal Amide), which is an organic polymer, and is mounted on the LED chip. 2) and an LED package having a reflection angle in the range of 120 to 140 degrees by using a wire 3 and electrically connected to the lead frame is used.
  • PPA reinforced polymer
  • PPA Poly Phthal Amide
  • the present invention has been made to solve the problems of the prior art as described above, the object of the present invention is to provide a wide light source capable of emitting 360 degrees from the LED, a transparent that can effectively emit heat generated from the LED to the outside
  • the present invention provides an LED chip package and an LED lamp including the same.
  • the LED chip package comprising a first recess made of a transparent material and the LED chip formed in the center of the upper surface is seated.
  • LED chip package characterized in that the second recess is formed in the center.
  • the transparent ceramic layer is formed over a part or the whole area.
  • the LED chip package further comprises a reflector in which aluminum and glass are sequentially stacked on the second concave portion.
  • An LED chip package having a light source diffusion part including a diffusion material on the first concave part.
  • LED chip package characterized in that the lead frame is formed on the upper and lower surfaces of the package, the transparent conductive film, silver and copper are deposited.
  • LED chip package characterized in that the LED attached to the substrate having a transparent ceramic layer and a carbon layer thereon.
  • the present invention it is possible to provide a wide LED light source capable of emitting a 360-degree light from the LED, and to provide a transparent LED chip package and an LED lamp including the same that can effectively emit heat generated from the LED to the outside.
  • FIG. 1 is a block diagram of a LED chip package according to the prior art.
  • Figure 2a, 2b is a block diagram of the LED chip package according to the present invention.
  • 3 is a configuration diagram of the LED chip package in which the LED chip is mounted.
  • Figure 4 is a configuration of the LED chip package in the light source diffusion portion formed on the LED chip.
  • 5A and 5B illustrate embodiments in which the LED chip packages according to the present invention are sequentially connected in parallel.
  • Figure 6 is an embodiment of the form in which the LED chip package according to the present invention in sequence connected.
  • FIG. 7A and 7B illustrate embodiments of an LED bulb in which an LED chip package is mounted therein in a state connected in parallel and in series, respectively.
  • the present invention provides an LED chip package made of a transparent material and including a first concave portion on which an LED chip formed at the center of the top surface is seated.
  • the present invention provides an LED chip package in which the LED chip package is connected in series or in parallel.
  • the present invention provides an LED lamp including the LED chip package.
  • Figure 2a, 2b is a block diagram of the LED chip package according to the present invention.
  • the LED chip package 10 has a first concave portion 10a formed at the center of an upper surface thereof, and a lead frame 11 is formed around the concave portion.
  • An LED chip is mounted in the recess 10a.
  • the LED chip package 10 is made of a transparent material, and preferably injection molded transparent glass having a light transmittance of 92% or more at a wavelength of 600 nm and a light transmittance of 90% or more at a wavelength of 900 nm.
  • the lead frame 11 is for supplying power to the LED chip mounted on the recess 10a.
  • the lead frame 11 is formed by depositing a transparent conductive film (ZnO) and silver (Ag) using a plasma CVD apparatus. It can be formed by depositing copper (Cu) here.
  • the lead frame 11 is formed over the upper surface, the side surface, and the lower surface at positions symmetrical with four locations of the LED chip package 10.
  • the second concave portion 10b is formed at the center of the lower surface of the LED chip package 10 according to the present invention.
  • FIG. 3 illustrates a package in which the LED chip 20 is mounted in the LED chip package according to the present invention as described in FIG. 2A.
  • the LED chip 20 is mounted and fixed by an adhesive such as epoxy applied to the center of the first recess 10a formed at the center of the upper surface of the LED package 10.
  • the LED chip 20 is connected so as to be electrically connected to the lead frame 11 by bonding using a wire 12 such as gold (Au) in the state seated in the first recess (10a). .
  • a transparent ceramic layer is formed over a portion or the entire area of the package.
  • a transparent ceramic layer is deposited on the substrate to which the LED of the LED chip 20 is attached, and a carbon layer is deposited thereon, or in particular, the back surface of the aluminum substrate. It is preferable to deposit a carbon layer on the substrate.
  • FIG. 4 illustrates a package in which the upper portion of the LED chip 20 mounted on the first recess 10a of the LED chip package according to the present invention as described in FIG. 3 is coated with a diffusion material.
  • the diffusion material may be any kind commonly used, and may express various colors in the form of a mixture mixed with glass.
  • the diffusion material is introduced into the first concave portion 10a and cured at a high temperature to form a light source diffuser 30 in the form of a lens.
  • the light source diffuser 30 may be formed on the second concave portion 10b formed at the center of the bottom surface of the LED chip package 10.
  • the light source that emits light from the LED emits light in the upward direction (40%), downward direction (40%), and right and left directions (20%).
  • the emission angle is formed with respect to the range.
  • a reflecting mirror may be formed in the second concave portion 10b in place of the light source diffuser 30 formed on the second concave portion 10b.
  • Aluminum may be formed by depositing aluminum on the part 10b and by depositing glass thereon.
  • the light emission of the LED may be focused at 180 degrees with a wide light source on the upper, left and front sides except for the lower surface. have.
  • 5A and 5B show an embodiment in which the LED chip package 10 according to the present invention is sequentially connected in parallel.
  • three LED chip packages 10, 10 ', and 10 " are sequentially stacked in parallel, and are mounted on the first concave portion of the upper surface of the first LED chip package 10 stacked on the top.
  • the light source diffuser 30 is formed on the LED chip 20, and the diffusion material is filled in the space between the second concave portion of the lower surface of the first LED chip package and the first concave portion of the upper surface of the second LED chip package 10 ′.
  • the diffusion material is filled in the space between the second recessed portion of the lower surface of the second LED chip package 10 'and the first recessed portion of the upper surface of the third LED chip package 10 ".
  • the light source diffuser 30 may be further formed in the center of the second concave portion of the bottom surface of the third LED chip package 10 ′′, or a reflector may be formed.
  • FIG 6 illustrates an embodiment in which the LED chip package 10 according to the present invention is connected in series.
  • three LED chip packages 10, 10 ', 10 are sequentially connected in series, and the light source diffuser 30 is formed on the first concave portion in the center of the upper surface of each LED chip package. 30 ', 30 ") are formed.
  • a light source diffuser may be further formed or a reflector may be formed on the second concave portion in the center of the bottom surface of each of the LED chip packages 10, 10 ′, and 10 ′′.
  • FIGS. 5A and 6 show an example of an LED bulb in which an LED chip package as shown in FIGS. 5A and 6 is mounted therein, respectively.
  • LED bulb according to the present invention includes a clasp 70 coupled to the external socket, a heat sink 40 for dissipating heat generated from the LED to the outside and a reflector 50 and a glass sphere 60 reflecting the light source and
  • the LED chip package 10 according to the present invention is coupled to the lower end of the heat sink 40 mounted inside the glass sphere 60. According to this configuration, it is possible to provide an LED light bulb that can provide a wide light source capable of emitting light at 360 degrees from the LED as shown, and can effectively radiate heat generated from the LED to the outside.
  • the present invention it is possible to provide a wide LED light source capable of emitting a 360-degree light from the LED, and to provide a transparent LED chip package and an LED lamp including the same that can effectively emit heat generated from the LED to the outside.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention relates to a LED chip package, which is made from a transparent material and comprises a first concave portion at the center of the upper surface in which the LED chip is seated. According to the above configuration, the present invention can provide a LED light bulb which provides a wide light source in an LED that can irradiate in 360 degrees and can effectively dissipate heat that is generated from the LED to the outside.

Description

투명한 엘이디 칩패키지 및 이를 포함하는 엘이디 조명등Transparent LED chip package and LED lighting lamp including the same
본 발명은 엘이디 칩패키지 및 이를 포함하는 엘이디 조명등에 관한 것으로, 보다 상세하게는 엘이디에서 360도로 발광이 가능한 넓은 광원을 제공하며, 엘이디에서 발생하는 열을 외부로 효과적으로 방출할 수 있는 투명한 엘이디 칩패키지 및 이를 포함하는 엘이디 조명등에 관한 것이다.The present invention relates to an LED chip package and an LED lighting lamp including the same, and more particularly, to provide a wide light source capable of emitting 360 degrees from the LED, a transparent LED chip package that can effectively emit heat generated from the LED to the outside And it relates to an LED lamp comprising the same.
종래에는 도 1에 나타낸 바와 같이 엘이디칩이 장착되는 패키지로서 유기 고분자인 강화플라스틱(PPA, Poly Phthal Amide)으로 이루어진 사출구조물(1)에 리드프레임(미도시)을 형성하고, 그 위에 엘이디칩(2)을 장착하고 와이어(3)를 이용하여 리드프레임과 전기적으로 접속시켜 반사각도가 120~140도의 범위를 갖는 엘이디 패키지가 사용되고 있다.Conventionally, as shown in FIG. 1, a lead frame (not shown) is formed on an injection structure 1 made of reinforced polymer (PPA, Poly Phthal Amide), which is an organic polymer, and is mounted on the LED chip. 2) and an LED package having a reflection angle in the range of 120 to 140 degrees by using a wire 3 and electrically connected to the lead frame is used.
하지만 종래의 이러한 구성의 엘이디 패키지를 장착한 엘이디 조명등(형광등, 전구 등)의 경우 PPA의 둔한 열전도성으로 리드프레임과 전자회로 접속부분에 열을 방열시키는 문제가 있고, 최대 140~160도의 범위로 반사각도가 제한되어지는 구조적인 결함을 갖고 있다.However, in the case of conventional LED lighting lamps (fluorescent lamps, light bulbs, etc.) equipped with the LED package of such a configuration, there is a problem of dissipating heat to the lead frame and the electronic circuit connection part due to the inferior thermal conductivity of PPA. There is a structural defect that the reflection angle is limited.
본 발명은 상기한 바와 같은 종래기술이 가지는 문제를 해결하기 위해 안출된 것으로, 그 목적은 엘이디에서 360도로 발광이 가능한 넓은 광원을 제공하며, 엘이디에서 발생하는 열을 외부로 효과적으로 방출할 수 있는 투명한 엘이디칩 패키지 및 이를 포함하는 엘이디 조명등을 제공함에 있다.The present invention has been made to solve the problems of the prior art as described above, the object of the present invention is to provide a wide light source capable of emitting 360 degrees from the LED, a transparent that can effectively emit heat generated from the LED to the outside The present invention provides an LED chip package and an LED lamp including the same.
상기한 바와 같은 본 발명의 기술적 과제는 다음과 같은 수단에 의해 달성되어진다.The technical problem of the present invention as described above is achieved by the following means.
(1) 투명재질로 이루어지고 상면 중앙에 형성된 엘이디칩이 안착되는 제1 오목부를 포함하는 엘이디칩 패키지.(1) The LED chip package comprising a first recess made of a transparent material and the LED chip formed in the center of the upper surface is seated.
(2) 제 1항에 있어서,(2) The method according to 1,
하면 중앙에 제2 오목부가 형성된 것을 특징으로 하는 엘이디칩 패키지.LED chip package, characterized in that the second recess is formed in the center.
(3) 제 1항에 있어서,(3) The method according to 1,
일부 또는 전체 영역에 걸쳐 투명세라믹층이 형성된 것을 특징으로 하는 엘이디칩 패키지.LED chip package, characterized in that the transparent ceramic layer is formed over a part or the whole area.
(4) 제 2항에 있어서,(4) The method according to 2,
제2 오목부에 알루미늄과 유리가 순차적으로 적층된 반사경을 더 구비하는 것을 특징으로 하는 엘이디칩 패키지.The LED chip package further comprises a reflector in which aluminum and glass are sequentially stacked on the second concave portion.
(5) 제 4항에 있어서,(5) The method according to 4,
제1 오목부 상에 확산재를 포함한 광원확산부를 갖는 것을 특징으로 하는 엘이디칩 패키지.An LED chip package having a light source diffusion part including a diffusion material on the first concave part.
(6) 제 1항에 있어서,(6) The method according to 1,
패키지의 상면 및 하면에 투명전도막, 은 및 구리가 증착된 리드프레임이 형성된 것을 특징으로 하는 엘이디칩 패키지.LED chip package, characterized in that the lead frame is formed on the upper and lower surfaces of the package, the transparent conductive film, silver and copper are deposited.
(7) 제 1항에 있어서,(7) The method according to 1,
엘이디칩은 엘이디가 부착되는 기판에 투명 세라믹층 및 그 위에 카본층을 갖는 것을 특징으로 하는 엘이디칩 패키지.LED chip package, characterized in that the LED attached to the substrate having a transparent ceramic layer and a carbon layer thereon.
(8) 제 1항 내지 제 7항에 의한 엘이디칩 패키지가 직렬 또는 병렬로 접속된 엘이디칩 패키지.(8) An LED chip package in which the LED chip packages according to (1) to (7) are connected in series or in parallel.
(9) 제 1항 내지 제 7항에 의한 엘이디칩 패키지를 포함하는 엘이디 조명등.(9) An LED lamp comprising the LED chip package according to (1) to (7).
(10) 제 8항에 의한 엘이디칩 패키지를 포함하는 엘이디 조명등.(10) An LED lamp comprising the LED chip package according to (8).
상기 본 발명에 의하면, 엘이디에서 360도로 발광이 가능한 넓은 광원을 제공하며, 엘이디에서 발생하는 열을 외부로 효과적으로 방출할 수 있는 투명한 엘이디칩 패키지 및 이를 포함하는 엘이디 조명등을 제공할 수 있다.According to the present invention, it is possible to provide a wide LED light source capable of emitting a 360-degree light from the LED, and to provide a transparent LED chip package and an LED lamp including the same that can effectively emit heat generated from the LED to the outside.
도 1은 종래기술에 띠른 엘이디칩 패키지의 구성도.1 is a block diagram of a LED chip package according to the prior art.
도 2a, 2b는 본 발명에 따른 엘이디칩 패키지의 구성도.Figure 2a, 2b is a block diagram of the LED chip package according to the present invention.
도 3은 엘이디칩이 안착된 상태의 엘이디칩 패키지의 구성도.3 is a configuration diagram of the LED chip package in which the LED chip is mounted.
도 4는 엘이디칩 상부에 광원확산부가 형성된 상태의 엘이디칩 패키지의 구성도.Figure 4 is a configuration of the LED chip package in the light source diffusion portion formed on the LED chip.
도 5a, 및 5b는 본 발명에 따른 엘이디칩 패키지를 순차 병렬로 접속한 형태의 실시예.5A and 5B illustrate embodiments in which the LED chip packages according to the present invention are sequentially connected in parallel.
도 6은 본 발명에 따른 엘이디칩 패키지를 순차 직렬로 접속한 형태의 실시예.Figure 6 is an embodiment of the form in which the LED chip package according to the present invention in sequence connected.
도 7a 및 도 7b는 각각 병렬 및 직렬로 접속한 상태의 엘이디칩 패키지를 내부에 장착한 엘이디 전구의 실시예.7A and 7B illustrate embodiments of an LED bulb in which an LED chip package is mounted therein in a state connected in parallel and in series, respectively.
<도면의 주요부분의 부호의 설명><Description of Symbols of Major Parts of Drawings>
10,10',10": 엘이디칩 패키지10,10 ', 10 ": LED chip package
10a: 제1 오목부10a: first recessed portion
10b: 제2 오목부10b: second recessed portion
11: 리드프레임11: leadframe
12: 와이어12: wire
20: 엘이디칩20: LED chip
30,30',30": 광원확산부30,30 ', 30 ": light source diffuser
40: 방열판40: heat sink
50: 반사갓50: reflection shade
60: 유리구60: glass sphere
70: 꼭지쇠70: clasp
본 발명은 투명재질로 이루어지고 상면 중앙에 형성된 엘이디칩이 안착되는 제1 오목부를 포함하는 엘이디칩 패키지를 제공한다.The present invention provides an LED chip package made of a transparent material and including a first concave portion on which an LED chip formed at the center of the top surface is seated.
본 발명은 상기 엘이디칩 패키지가 직렬 또는 병렬로 접속된 엘이디칩 패키지를 제공한다.The present invention provides an LED chip package in which the LED chip package is connected in series or in parallel.
또한, 본 발명은 상기 엘이디칩 패키지를 포함하는 엘이디 조명등을 제공한다.In addition, the present invention provides an LED lamp including the LED chip package.
이하 본 발명의 내용을 실시예를 도시한 도면을 참조하여 보다 상세하게 설명하기로 한다.Hereinafter, the content of the present invention will be described in more detail with reference to the accompanying drawings.
도 2a, 2b는 본 발명에 따른 엘이디칩 패키지의 구성도이다.Figure 2a, 2b is a block diagram of the LED chip package according to the present invention.
상기 엘이디칩 패키지(10)는 그 상면의 중앙에 제1 오목부(10a)가 형성되고 상기 오목부의 주위에 리드프레임(11)이 형성되어진다. 상기 오목부(10a)에는 엘이디칩이 장착되어진다. 상기 엘이디칩 패키지(10)는 투명한 재질로 이루어지며, 바람직하게는 파장 600nm의 광 투과율이 92% 이상이고 파장 900nm의 광 투과율이 90% 이상인 투명유리를 사출성형한 것을 이용할 수 있다. 상기 리드프레임(11)은 오목부(10a)에 장착되어지는 엘이디칩에 전원을 공급하기 위한 것으로 바람직하게는 플라즈마 CVD장치를 이용하여 투명전도막(ZnO)과 은(Ag)을 증착하여 형성하고, 여기에 구리(Cu)를 증착하여 형성할 수 있다. 본 발명의 실시예에서는 이러한 리드프레임(11)은 엘이디칩 패키지(10)의 4곳에 대칭이 되는 위치에서 상면과 측면 및 하면에 걸쳐 형성되어진다. 바람직하게는 본 발명에 따른 엘이디칩 패키지(10) 하면의 중앙에 제2 오목부(10b)가 형성되어진다.The LED chip package 10 has a first concave portion 10a formed at the center of an upper surface thereof, and a lead frame 11 is formed around the concave portion. An LED chip is mounted in the recess 10a. The LED chip package 10 is made of a transparent material, and preferably injection molded transparent glass having a light transmittance of 92% or more at a wavelength of 600 nm and a light transmittance of 90% or more at a wavelength of 900 nm. The lead frame 11 is for supplying power to the LED chip mounted on the recess 10a. Preferably, the lead frame 11 is formed by depositing a transparent conductive film (ZnO) and silver (Ag) using a plasma CVD apparatus. It can be formed by depositing copper (Cu) here. In the exemplary embodiment of the present invention, the lead frame 11 is formed over the upper surface, the side surface, and the lower surface at positions symmetrical with four locations of the LED chip package 10. Preferably, the second concave portion 10b is formed at the center of the lower surface of the LED chip package 10 according to the present invention.
도 3은 상기 도 2a에서 설명된 바와 같은 본 발명에 따른 엘이디칩 패키지에 엘이디칩(20)을 장착한 상태의 패키지를 나타내고 있다.3 illustrates a package in which the LED chip 20 is mounted in the LED chip package according to the present invention as described in FIG. 2A.
엘이디칩(20)은 엘이디 패키지(10)의 상면 중앙에 형성된 제1 오목부(10a)의 중심에 도포한 에폭시와 같은 접착제를 매개하여 안착고정되어진다. 이러한 엘이디칩(20)은 상기 제1 오목부(10a)에 안착된 상태에서 금(Au)과 같은 와이어(12)를 이용한 본딩에 의해 리드프레임(11)과 전기적으로 접속되어질 수 있도록 연결되어진다.The LED chip 20 is mounted and fixed by an adhesive such as epoxy applied to the center of the first recess 10a formed at the center of the upper surface of the LED package 10. The LED chip 20 is connected so as to be electrically connected to the lead frame 11 by bonding using a wire 12 such as gold (Au) in the state seated in the first recess (10a). .
상기 본 발명에 따른 엘이디칩 패키지의 효율적인 방열을 위하여 상기 패키지의 일부 또는 전체 영역에 걸쳐 투명세라믹층이 형성되는 것이 바람직하다. 또한 엘이디에서 발생하는 열을 수직방향으로 확산시키기 위해 바람직하게는 상기 엘이디칩(20)의 엘이디가 부착되는 기판에 투명세라믹층을 증착하고, 이 위에 카본층을 증착시키거나, 특히 알루미늄 기판의 뒷면에 카본층을 증착하여 두는 것이 좋다. For efficient heat dissipation of the LED chip package according to the present invention, it is preferable that a transparent ceramic layer is formed over a portion or the entire area of the package. In addition, in order to diffuse the heat generated from the LED in the vertical direction, preferably, a transparent ceramic layer is deposited on the substrate to which the LED of the LED chip 20 is attached, and a carbon layer is deposited thereon, or in particular, the back surface of the aluminum substrate. It is preferable to deposit a carbon layer on the substrate.
도 4는 상기 도 3에서 설명된 바와 같은 본 발명에 따른 엘이디칩 패키지의 제1 오목부(10a)에 안착된 엘이디칩(20)의 상부를 확산재로 도포한 상태의 패키지를 나타내고 있다.FIG. 4 illustrates a package in which the upper portion of the LED chip 20 mounted on the first recess 10a of the LED chip package according to the present invention as described in FIG. 3 is coated with a diffusion material.
확산재는 통상적으로 많이 사용되고 있는 어떠한 종류의 것도 사용되어질 수 있으며, 유리와 혼합한 혼합물의 형태로 다양한 색상을 발현할 수 있다. 이러한 확산재는 상기 제1 오목부(10a)에 투입하고 고온에서 경화시켜 렌즈형태의 광원확산부(30)를 형성한다.The diffusion material may be any kind commonly used, and may express various colors in the form of a mixture mixed with glass. The diffusion material is introduced into the first concave portion 10a and cured at a high temperature to form a light source diffuser 30 in the form of a lens.
이러한 광원확산부(30)는 바람직하게는 상기 엘이디칩 패키지(10)의 하면 중앙에 형성된 제2 오목부(10b) 상에도 형성되어질 수 있다. 이 경우 엘이디로부터 발광하는 광원은 상방향(40%), 하방향(40%), 좌우전후 방향(20%)로 발광하고, 또 리드프레임의 일부분은 광원이 좌우측면으로 난반사되어져 전체적으로 360도 전 범위에 대하여 발광각도를 형성하게 된다. The light source diffuser 30 may be formed on the second concave portion 10b formed at the center of the bottom surface of the LED chip package 10. In this case, the light source that emits light from the LED emits light in the upward direction (40%), downward direction (40%), and right and left directions (20%). The emission angle is formed with respect to the range.
본 발명의 다른 실시태양에 의하면, 상기 제2 오목부(10b) 상에 형성되는 광원확산부(30)를 대신하여 제2 오목부(10b)에 반사경을 형성할 수도 있다, 반사경은 제2 오목부(10b)에 알루미늄을 증착하고 그 위에 유리를 증착하여 형성할 수 있으며, 이 경우 엘이디의 발광은 하면을 제외한 상면, 좌우면 및 전후면으로 넓은 광원으로 180도 범위로 집중하여 발광하도록 할 수도 있다.According to another embodiment of the present invention, a reflecting mirror may be formed in the second concave portion 10b in place of the light source diffuser 30 formed on the second concave portion 10b. Aluminum may be formed by depositing aluminum on the part 10b and by depositing glass thereon. In this case, the light emission of the LED may be focused at 180 degrees with a wide light source on the upper, left and front sides except for the lower surface. have.
도 5a, 및 5b는 본 발명에 따른 엘이디칩 패키지(10)를 순차 병렬로 접속한 형태의 실시예를 나타내고 있다.5A and 5B show an embodiment in which the LED chip package 10 according to the present invention is sequentially connected in parallel.
상기 실시예에 의하면, 3개의 엘이디칩 패키지(10, 10', 10")가 순차 병렬로 적층된 형태로서, 최상위에 적층된 제1 엘이디칩 패키지(10) 상면의 제1 오목부에 안착된 엘이디칩(20) 위에 광원확산부(30)가 형성되어 있으며, 제1 엘이디칩 패키지 하면의 제2 오목부와 제2 엘이디칩 패키지(10') 상면의 제1 오목부의 사이 공간에 확산재가 충전된다. 마찬가지로 제2 엘이디칩 패키지(10') 하면의 제2 오목부와 제3 엘이디칩 패키지(10") 상면의 제1 오목부의 사이 공간에 확산재가 충전되어진다. 마지막으로 제3 엘이디칩 패키지(10")의 하면 중앙의 제 2 오목부에 필요에 따라 광원확산부(30)가 더 형성될 수도 있고 반사경이 형성되어질 수도 있다.According to the above embodiment, three LED chip packages 10, 10 ', and 10 "are sequentially stacked in parallel, and are mounted on the first concave portion of the upper surface of the first LED chip package 10 stacked on the top. The light source diffuser 30 is formed on the LED chip 20, and the diffusion material is filled in the space between the second concave portion of the lower surface of the first LED chip package and the first concave portion of the upper surface of the second LED chip package 10 ′. Similarly, the diffusion material is filled in the space between the second recessed portion of the lower surface of the second LED chip package 10 'and the first recessed portion of the upper surface of the third LED chip package 10 ". Finally, the light source diffuser 30 may be further formed in the center of the second concave portion of the bottom surface of the third LED chip package 10 ″, or a reflector may be formed.
도 6은 본 발명에 따른 엘이디칩 패키지(10)를 순차 직렬로 접속한 형태의 실시예를 나타내고 있다.6 illustrates an embodiment in which the LED chip package 10 according to the present invention is connected in series.
상기 실시예에 의하면, 3개의 엘이디칩 패키지(10, 10', 10")가 순차적으로 직렬로 접속한 형태로서, 각 엘이디칩 패키지의 상면 중앙의 제1 오목부 상에 광원확산부(30,30',30")가 형성되어 있는 형태이다. 마찬가지로 각각의 엘이디칩 패키지(10, 10', 10")의 하면 중앙의 제2 오목부 상에는 필요에 따라 광원확산부가 더 형성될 수도 있고 반사경이 형성되어질 수도 있다. According to the above embodiment, three LED chip packages 10, 10 ', 10 "are sequentially connected in series, and the light source diffuser 30 is formed on the first concave portion in the center of the upper surface of each LED chip package. 30 ', 30 ") are formed. Similarly, a light source diffuser may be further formed or a reflector may be formed on the second concave portion in the center of the bottom surface of each of the LED chip packages 10, 10 ′, and 10 ″.
도 7a 및 도 7b는 각각 상기 도 5a 및 도 6에 도시된 바와 같은 엘이디칩 패키지를 내부에 장착한 형태의 엘이디 전구의 예가 도시되어 있다.7A and 7B show an example of an LED bulb in which an LED chip package as shown in FIGS. 5A and 6 is mounted therein, respectively.
본 발명에 따른 엘이디 전구는 외부 소켓과 결합하는 꼭지쇠(70), 엘이디로부터 발생하는 열을 외부로 방출하는 방열판(40)과 광원을 반사하는 반사갓(50) 및 유리구(60)를 포함하며, 본 발명에 따른 엘이디칩 패키지(10)는 상기 유리구(60) 내부에 장착된 방열판(40)의 하단에 결합되어진다. 이러한 구성에 의하면 도시된 바와 같이 엘이디에서 360도로 발광이 가능한 넓은 광원을 제공하며, 엘이디에서 발생하는 열을 외부로 효과적으로 방출할 수 있는 엘이디 전구를 제공할 수 있다. LED bulb according to the present invention includes a clasp 70 coupled to the external socket, a heat sink 40 for dissipating heat generated from the LED to the outside and a reflector 50 and a glass sphere 60 reflecting the light source and The LED chip package 10 according to the present invention is coupled to the lower end of the heat sink 40 mounted inside the glass sphere 60. According to this configuration, it is possible to provide an LED light bulb that can provide a wide light source capable of emitting light at 360 degrees from the LED as shown, and can effectively radiate heat generated from the LED to the outside.
상기와 같이, 본 발명의 바람직한 실시 예를 참조하여 설명하였지만 해당 기술 분야의 숙련된 당업자라면 하기의 특허청구범위에 기재된 본 발명의 사상 및 영역으로부터 벗어나지 않는 범위 내에서 본 발명을 다양하게 수정 및 변경시킬 수 있음을 이해할 수 있을 것이다.As described above, it has been described with reference to a preferred embodiment of the present invention, but those skilled in the art various modifications and changes of the present invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.
상기 본 발명에 의하면, 엘이디에서 360도로 발광이 가능한 넓은 광원을 제공하며, 엘이디에서 발생하는 열을 외부로 효과적으로 방출할 수 있는 투명한 엘이디칩 패키지 및 이를 포함하는 엘이디 조명등을 제공할 수 있다.According to the present invention, it is possible to provide a wide LED light source capable of emitting a 360-degree light from the LED, and to provide a transparent LED chip package and an LED lamp including the same that can effectively emit heat generated from the LED to the outside.

Claims (10)

  1. 투명재질로 이루어지고 상면 중앙에 형성된 엘이디칩이 안착되는 제 1 오목부를 포함하는 엘이디칩 패키지.LED chip package comprising a first recess made of a transparent material and the LED chip formed in the center of the upper surface is seated.
  2. 제 1항에 있어서,The method of claim 1,
    하면 중앙에 제2 오목부가 형성된 것을 특징으로 하는 엘이디칩 패키지.LED chip package, characterized in that the second recess is formed in the center.
  3. 제 1항에 있어서,The method of claim 1,
    일부 또는 전체 영역에 걸쳐 투명세라믹층이 형성된 것을 특징으로 하는 엘이디칩 패키지.LED chip package, characterized in that the transparent ceramic layer is formed over a part or the whole area.
  4. 제 2항에 있어서,The method of claim 2,
    제2 오목부에 알루미늄과 유리가 순차적으로 적층된 반사경을 더 구비하는 것을 특징으로 하는 엘이디칩 패키지.The LED chip package further comprises a reflector in which aluminum and glass are sequentially stacked on the second concave portion.
  5. 제 4항에 있어서,The method of claim 4, wherein
    제1 오목부 상에 확산재를 포함한 광원확산부를 갖는 것을 특징으로 하는 엘이디칩 패키지.An LED chip package having a light source diffusion part including a diffusion material on the first concave part.
  6. 제 1항에 있어서,The method of claim 1,
    패키지의 상면 및 하면에 투명전도막, 은 및 구리가 증착된 리드프레임이 형성된 것을 특징으로 하는 엘이디칩 패키지.LED chip package, characterized in that the lead frame is formed on the upper and lower surfaces of the package, the transparent conductive film, silver and copper are deposited.
  7. 제 1항에 있어서,The method of claim 1,
    엘이디칩은 엘이디가 부착되는 기판에 투명 세라믹층 및 그 위에 카본층을 갖는 것을 특징으로 하는 엘이디칩 패키지.LED chip package, characterized in that the LED attached to the substrate having a transparent ceramic layer and a carbon layer thereon.
  8. 제 1항 내지 제 7항에 의한 엘이디칩 패키지가 직렬 또는 병렬로 접속된 엘이디칩 패키지.An LED chip package in which the LED chip package according to claim 1 is connected in series or in parallel.
  9. 제 1항 내지 제 7항에 의한 엘이디칩 패키지를 포함하는 엘이디 조명등.An LED lighting lamp comprising the LED chip package according to claim 1.
  10. 제 8항에 의한 엘이디칩 패키지를 포함하는 엘이디 조명등.LED lighting including the LED chip package according to claim 8.
PCT/KR2011/009547 2010-12-13 2011-12-12 Transparent led chip package and led lighting including same WO2012081875A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0127141 2010-12-13
KR1020100127141A KR20120065827A (en) 2010-12-13 2010-12-13 Transparent led chip package and led light comprising the same

Publications (1)

Publication Number Publication Date
WO2012081875A1 true WO2012081875A1 (en) 2012-06-21

Family

ID=46244900

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/009547 WO2012081875A1 (en) 2010-12-13 2011-12-12 Transparent led chip package and led lighting including same

Country Status (2)

Country Link
KR (1) KR20120065827A (en)
WO (1) WO2012081875A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101431590B1 (en) * 2013-04-09 2014-08-29 주식회사 굿엘이디 Light-Emitting Diode package of luminescence for spherical shaped
KR102091338B1 (en) * 2018-11-15 2020-03-19 조성은 Laser diode package

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070043330A (en) * 2005-10-21 2007-04-25 웬-쿵 숭 Structure of omnidirectional led
JP2008533716A (en) * 2005-03-11 2008-08-21 ソウル セミコンダクター カンパニー リミテッド Light emitting diode package having an array of light emitting cells connected in series
JP4142080B2 (en) * 2003-03-10 2008-08-27 豊田合成株式会社 Light emitting device
KR20090002206A (en) * 2007-06-21 2009-01-09 서울반도체 주식회사 Bidirectional light emitting diode

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4142080B2 (en) * 2003-03-10 2008-08-27 豊田合成株式会社 Light emitting device
JP2008533716A (en) * 2005-03-11 2008-08-21 ソウル セミコンダクター カンパニー リミテッド Light emitting diode package having an array of light emitting cells connected in series
KR20070043330A (en) * 2005-10-21 2007-04-25 웬-쿵 숭 Structure of omnidirectional led
KR20090002206A (en) * 2007-06-21 2009-01-09 서울반도체 주식회사 Bidirectional light emitting diode

Also Published As

Publication number Publication date
KR20120065827A (en) 2012-06-21

Similar Documents

Publication Publication Date Title
WO2016190644A1 (en) Light-emitting device and vehicular lamp comprising same
WO2010064793A2 (en) Radially-shaped heat dissipating apparatus, and bulb-shaped led lighting apparatus using same
WO2010035944A2 (en) Light-emitting device
WO2013137657A1 (en) Led illumination module
WO2013005971A2 (en) Lighting device
WO2011049374A2 (en) Light emitting device and light unit using same
WO2016122179A1 (en) Lighting device
WO2012002629A1 (en) Light-emitting diode module
WO2013015468A1 (en) Led lens and led module for two-sided lighting, and led two-sided lighting apparatus using same
WO2011065705A2 (en) Lighting assembly and lighting apparatus having same
WO2016099156A1 (en) Illumination device
WO2010074371A1 (en) Chip-on-board led package and manufacturing method thereof
WO2011078506A2 (en) Light emitting diode package and method for fabricating the same
WO2015016525A1 (en) Lighting device
WO2013036061A1 (en) Lighting device
WO2013085244A1 (en) Led lighting apparatus
WO2012050318A2 (en) Led lamp capable of detachable coupling
WO2012081875A1 (en) Transparent led chip package and led lighting including same
WO2013005999A1 (en) Illuminating apparatus using leds
WO2015057006A1 (en) Lighting apparatus and lighting system
WO2017014574A1 (en) Integrated light-emitting package
WO2019135421A1 (en) Vehicle lamp using semiconductor light-emitting device
WO2013070025A1 (en) Led lighting apparatus
WO2017191941A1 (en) Lighting apparatus
WO2013015464A1 (en) Led package and method for manufacturing same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11848379

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11848379

Country of ref document: EP

Kind code of ref document: A1